WO2020133800A1 - 有机发光二极管显示器及其制造方法 - Google Patents
有机发光二极管显示器及其制造方法 Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
Definitions
- the invention relates to a display and a manufacturing method thereof, in particular to an organic light emitting diode display and a manufacturing method thereof.
- OLED Organic Light Emitting Diode
- OLED displays have many advantages, such as bright colors, high contrast, low power consumption, and flexibility, and have become a hot spot for development and investment in the display field. As the production process of OLED displays becomes more and more mature, OLED displays are more and more recognized by the public, and the application fields will become wider and wider.
- the transparent cathode is a metal film with high activity, for example: Mg/Ag translucent film.
- Mg/Ag translucent film When the thickness of the thin film of the transparent cathode is very small, a large impedance will be generated, thereby reducing the conductivity of the transparent cathode.
- the distance between the center of the display and the electrode input end of the edge is large and the line is long, resulting in a large IR-drop of the OLED display, making the brightness of the edge of the display greater than the display The brightness of the center, and the problem of insufficient brightness uniformity occurs.
- the object of the present invention is to provide an organic light-emitting diode display and a method of manufacturing the same, using flip-chip bonding to connect the electrode lead and the transparent cathode layer, which can reduce the resistance voltage drop of a large-size display to eliminate brightness uniformity Insufficient problems.
- an embodiment of the present invention provides a method for manufacturing an organic light emitting diode display.
- the method for manufacturing an organic light emitting diode display includes an electrode lead forming step, a conductive layer forming step, and a pixel definition layer The forming step, an organic light emitting material layer forming step, a transparent cathode layer forming step and a contact pad forming step.
- a plurality of electrode leads are formed on a cover plate, and each electrode lead has a plurality of electrode contact points, wherein the electrode lead is a metal, and the metal is gold, silver, aluminum, Copper or palladium; in the step of forming the conductive layer, an anode conductive layer and a cathode conductive layer are formed on a substrate; in the step of forming the pixel definition layer, formed on the substrate and the anode conductive layer A pixel definition layer, wherein the pixel definition layer has a plurality of via holes, the via holes expose a portion of the anode conductive layer; in the step of forming the organic light emitting material layer, an organic light emitting material layer is provided on the In the via; in the step of forming the transparent cathode layer, a transparent cathode layer is formed on the cathode conductive layer, the pixel definition layer and the organic light emitting material layer; in the step of forming the contact pad In the step of forming a plurality of electrode contact points, where
- a patterned light-shielding layer is first formed on the cover plate, and then metal ink spraying is performed on the light-shielding layer to form the multiple Electrode leads.
- the light shielding layer is a black organic resin
- the black organic resin is coated by slit coating, screen printing, spin coating, spraying Ink printing or casting to form an organic film, and then exposure and development to form the patterned light-shielding layer.
- the shading layer is a black inorganic film, and the black inorganic film is formed by sputtering, evaporation, chemical vapor deposition or physical vapor deposition form.
- the patterned contact pads are formed by vapor deposition, and the contact pads are disposed above the pixel definition layer.
- the contact pad in the step of forming the contact pad, has a thin layer and a bump, the thin layer is formed on the transparent cathode layer, the bump It is provided on the thin layer, and the raised portion is configured to contact the electrode contact point.
- an embodiment of the invention provides an organic light emitting diode display including a substrate, an anode conductive layer, a cathode conductive layer, a pixel definition layer, and an organic light emitting material Layer, a transparent cathode layer, a plurality of contact pads, a plurality of electrode leads, a cover plate and a frame glue; the frame glue is combined between the substrate and the cover plate to form a chamber;
- the anode conductive layer and the cathode conductive layer are formed on the substrate, and the pixel definition layer is formed on the substrate and the anode conductive layer, wherein the pixel definition layer has a plurality of vias, the over The hole exposes part of the anode conductive layer;
- the organic light emitting material layer is disposed in the via hole, and the transparent cathode layer is formed on the cathode conductive layer, the pixel definition layer, and the organic light emitting material layer
- the contact pad is formed on the transparent cathode
- the cover plate defines a dense area and a sparse area, the dense area is located at a center of the cover plate, the sparse area is located at the periphery of the dense area, wherein An arrangement density of the electrode contact points in the dense area is greater than an arrangement density of the electrode contact points in the sparse area.
- each of the contact pads has a thin layer and a raised portion
- the thin layer is formed on the transparent cathode layer
- the raised portion is provided on the thin layer
- the raised portion is configured to contact the electrode contact point.
- the thin layer of the contact pad is a rectangle, and at least one side of the thin layer is 10 to 30 microns in length.
- an embodiment of the present invention provides a method for manufacturing an organic light emitting diode display.
- the method for manufacturing an organic light emitting diode display includes an electrode lead forming step, a conductive layer forming step, and a pixel definition layer The forming step, an organic light emitting material layer forming step, a transparent cathode layer forming step and a contact pad forming step.
- each electrode lead has a plurality of electrode contact points; in the conductive layer forming step, an anode conductive layer and A cathode conductive layer; in the pixel definition layer forming step, a pixel definition layer is formed on the substrate and the anode conductive layer, wherein the pixel definition layer has a plurality of vias, the vias are exposed Part of the anode conductive layer; in the step of forming the organic light emitting material layer, an organic light emitting material layer is provided in the via hole; in the step of forming the transparent cathode layer, a transparent cathode layer is formed on the On the cathode conductive layer, the pixel definition layer, and the organic light-emitting material layer; in the contact pad forming step, a plurality of contact pads are formed on the transparent cathode layer; in the cover plate assembly step In the method, the cover plate is covered above the substrate, so that the contact pads
- a patterned light-shielding layer is first formed on the cover plate, and then metal ink spraying is performed on the light-shielding layer to form the multiple Electrode leads.
- the light shielding layer is a black organic resin
- the black organic resin is coated by slit coating, screen printing, spin coating, spraying Ink printing or casting to form an organic film, and then exposure and development to form the patterned light-shielding layer.
- the shading layer is a black inorganic film, and the black inorganic film is formed by sputtering, evaporation, chemical vapor deposition or physical vapor deposition form.
- the patterned contact pads are formed by vapor deposition, and the contact pads are disposed above the pixel definition layer.
- the contact pad in the step of forming the contact pad, has a thin layer and a bump, the thin layer is formed on the transparent cathode layer, the bump It is provided on the thin layer, and the raised portion is configured to contact the electrode contact point.
- the beneficial effect of the present invention is that the cover plate provided with the electrode lead is overlaid on the substrate on which the OLED device is formed by flip chip bonding, so as to connect the electrode lead and the transparent cathode layer Connected together, which can reduce the resistance voltage drop of large-size displays to eliminate the problem of insufficient brightness uniformity.
- FIG. 1 is a schematic diagram of a preferred embodiment of an organic light emitting diode display according to the present invention.
- FIG. 2 is a schematic diagram of a cover plate of a preferred embodiment of an organic light emitting diode display according to the present invention.
- FIG. 3 is a flowchart of a preferred embodiment of a method for manufacturing an organic light emitting diode display according to the present invention.
- FIG. 4 is a cross-sectional view of an electrode lead of a preferred embodiment of an organic light emitting diode display according to the present invention.
- FIG. 5 is a top view of an electrode lead of a preferred embodiment of an organic light emitting diode display according to the present invention.
- FIG. 1 is a schematic diagram of a preferred embodiment of the organic light emitting diode display of the present invention.
- the organic light emitting diode display includes a substrate 21, an anode conductive layer 31, a cathode conductive layer 32, a pixel definition layer 4, an organic light emitting material layer 5, a transparent cathode layer 6, a plurality of contact pads 7, multiple Electrode leads 8, a cover plate 22 and a sealant 23, wherein the anode conductive layer 31, the cathode conductive layer 32, the pixel definition layer 4, the organic light emitting material layer 5 and the transparent cathode layer 6 constitute an organic light emitting diode device (OLED device).
- OLED device organic light emitting diode device
- the sealant 23 has a first frame 231 and a second frame 232, the first frame 231 and the second frame 232 are combined on the substrate 21 and the A cavity 20 is formed between the cover plates 22.
- the anode conductive layer 31 and the cathode conductive layer 32 are formed on the substrate 21, and the anode conductive layer 31 and the cathode conductive layer 32 are spaced apart from each other, and the pixel definition
- the layer 4 is formed on the substrate 21, the anode conductive layer 31, and the cathode conductive layer 32, wherein the pixel definition layer 4 has a plurality of vias 41, and the exposed portions of the plurality of vias 41 are exposed Narrated anode conductive layer 31.
- the organic light emitting material layer 5 is provided in the via 41, the transparent cathode layer 6 is formed on the cathode conductive layer 32, the pixel definition layer 4 and the organic light emitting material On the layer 4, and the contact pad 7 is formed on the transparent cathode layer 6 (only one of them is shown in FIG. 1 for illustration).
- the electrode leads 8 are formed on the cover plate 22, each electrode lead 8 has a plurality of electrode contact points 81, and the electrode contact points 8 are electrically connected to the contact pads 7, respectively connection.
- each of the contact pads 7 has a thin layer 71 and a raised portion 72, the thin layer 71 is formed on the transparent cathode layer 6, the raised portion 72 The thin layer 71 is provided, and the raised portion 72 is configured to contact the electrode contact point 81.
- the thin layer 71 of the contact pad 7 is a rectangle, and at least one side of the thin layer 71 is 10 to 30 microns in length.
- the cover plate 22 defines a dense area A1 and a sparse area A2, the dense area A1 is located at a center of the cover plate 22, for example: a geometric center, the sparse area A2 is located at the periphery of the dense area A1, wherein an arrangement density of the electrode contact points 81 located in the dense area A1 is greater than an arrangement density of the electrode contact points 81 located in the sparse area A2.
- the cover plate 22 provided with the electrode lead 8 is overlaid on the substrate 21 on which the OLED device is formed by flip chip bonding, so as to connect the electrode lead 8 Connecting with the transparent cathode layer 6 can further reduce the resistance drop (IR-drop) of a large-sized display to eliminate the problem of insufficient brightness uniformity.
- FIG. 3 is a flowchart of a preferred embodiment of the method for manufacturing the organic light emitting diode display of the present invention.
- the manufacturing method includes an electrode lead forming step S201, a conductive layer forming step S202, a pixel definition layer forming step S203, an organic light emitting material layer forming step S204, a transparent cathode layer forming step S205, and a contact pad forming step S206.
- an electrode lead forming step S201 a conductive layer forming step S202, a pixel definition layer forming step S203, an organic light emitting material layer forming step S204, a transparent cathode layer forming step S205, and a contact pad forming step S206.
- a patterned light-shielding layer 9 is first formed on a cover plate 22, and then metal ink is applied on the light-shielding layer 9 Spray coating to form a plurality of electrode leads 8, wherein each electrode lead 8 has a plurality of electrode contact points 81.
- the electrode lead 8 is a metal
- the metal is gold, silver, aluminum, copper or palladium
- the light shielding layer 9 is a black organic resin
- the black organic resin passes through the slit
- An organic film is formed by coating, screen printing, spin coating, inkjet printing or casting, and then exposed and developed to form the patterned light-shielding layer.
- the light-shielding layer 9 may also be a black inorganic thin film, wherein the black inorganic thin film is formed by sputtering, evaporation, chemical vapor deposition or physical vapor deposition.
- the black inorganic thin film may be a metal oxide or a sulfide, for example: copper oxide, iron oxide, manganese dioxide, ferric oxide, molybdenum sulfide, or copper sulfide.
- an anode conductive layer 31 and a cathode conductive layer 32 are formed on a substrate 21, wherein the anode conductive layer 31 and the cathode A gap is formed between the conductive layers 32.
- a pixel definition layer 4 is formed on the substrate 21, the anode conductive layer 31 and the cathode conductive layer 32, wherein
- the pixel definition layer 4 has a plurality of vias 41, and the vias 41 expose a portion of the anode conductive layer 31.
- an organic light emitting material layer 5 is disposed in the via 41 to cover the organic light emitting material layer 5
- the via hole 41 exposes a portion of the anode conductive layer 31.
- a transparent cathode layer 6 is formed on the cathode conductive layer 32, the pixel definition layer 4 and the organic light emitting material layer 5 on.
- a plurality of contact pads 7 are formed on the transparent cathode layer 6 while the cover plate 22 is placed in a vacuum chamber Covering above the substrate 21, the contact pads 7 are electrically connected to the electrode contact points 81 respectively.
- the patterned contact pads 7 are formed by evaporation, wherein the contact pad 7 is a metal, and the metal is gold, silver, aluminum, copper, or palladium, and the A thickness of the contact pad 7 is 50 to 5000 nm.
- the contact pad 7 is disposed above the pixel definition layer 4, wherein the contact pad 7 has a thin layer 71 and a bump 72, the thin layer 71 is formed on the transparent cathode On the layer 6, the raised portion 72 is provided on the thin layer 71, and the raised portion 72 is configured to contact the electrode contact point 81.
- Flip chip bonding is used to cover the cover plate 22 provided with the electrode lead 8 over the substrate 21 on which the OLED device is formed, so as to connect the electrode lead 8 with the transparent
- the cathode layer 6 is connected to reduce the IR-drop of a large-sized display to eliminate the problem of insufficient brightness uniformity.
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Abstract
本发明公开一种有机发光二极管显示器及其制造方法，所述有机发光二极管显示器包括一基板、一阳极导电层、一阴极导电层、一像素定义层、一有机发光材料层、一透明阴极层、多个接触衬垫、多个电极引线、一盖板及一框胶；其中所述像素定义层具有多个过孔，所述有机发光材料层设置在所述过孔中，所述透明阴极层形成在所述阴极导电层、所述像素定义层及所述有机发光材料层上；所述接触衬垫形成在所述透明阴极层上，每一电极引线具有多个电极接触点，而且所述电极接触点分别与所述接触衬垫电性连接。
Description
本发明是有关于一种显示器及其制造方法，特别是有关于一种有机发光二极管显示器及其制造方法。
随着显示技术的急速进步，作为显示装置核心的半导体元件技术也随之得到了飞跃性的进步。对于现有的显示装置而言，有机发光二极管(Organic
Light Emitting Diode, OLED)作为一种电流型发光器件，因其所具有的自发光、快速响应、宽视角和可制作在柔性衬底上等特点而越来越多地被应用于高性能显示领域当中。另外，OLED显示器具有色彩鲜艳，高对比度，功耗低，可柔等诸多优点，成为显示领域开发和投资的热点。随着OLED显示器制作工艺的日趋成熟，OLED显示器越来越被大众所认可，应用领域将会越来越广。
然而，对于顶发射OLED显示器来说，透明阴极是采用活性高的金属薄膜，例如：Mg/Ag半透明薄膜。当所述透明阴极的薄膜厚度很小时，会产生较大的阻抗，因而降低所述透明阴极的导电能力。对于大尺寸的OLED显示器，显示屏的中心与边缘的电极输入端的距离较大而且线路较长，导致OLED显示器的电阻压降(IR-drop)变大，使得显示屏的边缘的亮度大于显示屏的中心的亮度，而产生亮度均匀性不足的问题。
本发明的目的在于提供一种有机发光二极管显示器及其制造方法，利用倒装芯片接合的方式将电极引线与透明阴极层连接起来，进而能够降低大尺寸显示器的电阻压降，以消除亮度均匀性不足的问题。
为达成本发明的前述目的，本发明一实施例提供一种有机发光二极管显示器的制造方法，所述有机发光二极管显示器的制造方法包括一电极引线形成步骤、一导电层形成步骤、一像素定义层形成步骤、一有机发光材料层形成步骤、一透明阴极层形成步骤及一接触衬垫形成步骤。在所述电极引线形成步骤中，在一盖板形成多个电极引线，而且每一电极引线具有多个电极接触点，其中所述电极引线为一金属，所述金属为金、银、铝、铜或钯；在所述导电层形成步骤中，在一基板上形成一阳极导电层及一阴极导电层；在所述像素定义层形成步骤中，在所述基板及所述阳极导电层上形成一像素定义层，其中所述像素定义层具有多个过孔，所述过孔曝露出部分所述阳极导电层；在所述有机发光材料层形成步骤中，将一有机发光材料层设置在所述过孔中；在所述透明阴极层形成步骤中，将一透明阴极层形成在所述阴极导电层、所述像素定义层及所述有机发光材料层上；在所述接触衬垫形成步骤中，在所述透明阴极层上形成多个接触衬垫；在所述盖板组合步骤中，将所述盖板覆盖在所述基板的上方，使得所述接触衬垫分别与所述电极接触点电性连接。
在本发明的一实施例中，在所述电极引线形成步骤中，先在所述盖板上形成图案化的一遮光层，接着在所述遮光层上进行金属油墨喷涂，以形成所述多个电极引线。
在本发明的一实施例中，在所述电极引线形成步骤中，所述遮光层为一黑色有机树脂，而且所述黑色有机树脂是通过狭缝涂布、丝网打印、旋涂布、喷墨打印或流延而形成一有机薄膜，再经过曝光显影而形成图案化的所述遮光层。
在本发明的一实施例中，在所述电极引线形成步骤中，所述遮光层为一黑色无机薄膜，而且所述黑色无机薄膜是通过喷溅、蒸镀、化学气相沉积或物理气相沉积而形成。
在本发明的一实施例中，在所述接触衬垫形成步骤中，采用蒸镀形成图案化的所述多个接触衬垫，所述接触衬垫设置在所述像素定义层的上方。
在本发明的一实施例中，在所述接触衬垫形成步骤中，所述接触衬垫具有一薄层及一隆起部，所述薄层形成在所述透明阴极层上，所述隆起部设置在所述薄层上，而且所述隆起部配置用以接触所述电极接触点。
为达成本发明的前述目的，本发明一实施例提供一种有机发光二极管显示器，所述有机发光二极管显示器包括一基板、一阳极导电层、一阴极导电层、一像素定义层、一有机发光材料层、一透明阴极层、多个接触衬垫、多个电极引线、一盖板及一框胶；所述框胶组合在所述基板及所述盖板之间，以形成一腔室；所述阳极导电层及所述阴极导电层形成在所述基板上，所述像素定义层形成在所述基板及所述阳极导电层上，其中所述像素定义层具有多个过孔，所述过孔曝露出部分所述阳极导电层；所述有机发光材料层设置在所述过孔中，所述透明阴极层形成在所述阴极导电层、所述像素定义层及所述有机发光材料层上；所述接触衬垫形成在所述透明阴极层上，每一电极引线具有多个电极接触点，而且所述电极接触点分别与所述接触衬垫电性连接。
在本发明的一实施例中，所述盖板定义一密集区及一稀疏区，所述密集区位于所述盖板的一中心，所述稀疏区位于所述密集区的外围，其中位于所述密集区的所述电极接触点的一排列密度大于位于所述稀疏区的所述电极接触点的一排列密度。
在本发明的一实施例中，每一所述接触衬垫具有一薄层及一隆起部，所述薄层形成在所述透明阴极层上，所述隆起部设置在所述薄层上，而且所述隆起部配置用以接触所述电极接触点。
在本发明的一实施例中，所述接触衬垫的薄层为一矩形，而且所述薄层的至少一边长为10至30微米。
为达成本发明的前述目的，本发明一实施例提供一种有机发光二极管显示器的制造方法，所述有机发光二极管显示器的制造方法包括一电极引线形成步骤、一导电层形成步骤、一像素定义层形成步骤、一有机发光材料层形成步骤、一透明阴极层形成步骤及一接触衬垫形成步骤。在所述电极引线形成步骤中，在一盖板形成多个电极引线，而且每一电极引线具有多个电极接触点；在所述导电层形成步骤中，在一基板上形成一阳极导电层及一阴极导电层；在所述像素定义层形成步骤中，在所述基板及所述阳极导电层上形成一像素定义层，其中所述像素定义层具有多个过孔，所述过孔曝露出部分所述阳极导电层；在所述有机发光材料层形成步骤中，将一有机发光材料层设置在所述过孔中；在所述透明阴极层形成步骤中，将一透明阴极层形成在所述阴极导电层、所述像素定义层及所述有机发光材料层上；在所述接触衬垫形成步骤中，在所述透明阴极层上形成多个接触衬垫；在所述盖板组合步骤中，将所述盖板覆盖在所述基板的上方，使得所述接触衬垫分别与所述电极接触点电性连接。
在本发明的一实施例中，在所述电极引线形成步骤中，先在所述盖板上形成图案化的一遮光层，接着在所述遮光层上进行金属油墨喷涂，以形成所述多个电极引线。
在本发明的一实施例中，在所述电极引线形成步骤中，所述遮光层为一黑色有机树脂，而且所述黑色有机树脂是通过狭缝涂布、丝网打印、旋涂布、喷墨打印或流延而形成一有机薄膜，再经过曝光显影而形成图案化的所述遮光层。
在本发明的一实施例中，在所述电极引线形成步骤中，所述遮光层为一黑色无机薄膜，而且所述黑色无机薄膜是通过喷溅、蒸镀、化学气相沉积或物理气相沉积而形成。
在本发明的一实施例中，在所述接触衬垫形成步骤中，采用蒸镀形成图案化的所述多个接触衬垫，所述接触衬垫设置在所述像素定义层的上方。
在本发明的一实施例中，在所述接触衬垫形成步骤中，所述接触衬垫具有一薄层及一隆起部，所述薄层形成在所述透明阴极层上，所述隆起部设置在所述薄层上，而且所述隆起部配置用以接触所述电极接触点。
本发明的有益效果为：通过倒装芯片接合的方式将设有所述电极引线的所述盖板覆盖在形成有OLED器件的基板的上方，用以将所述电极引线与所述透明阴极层连接起来，进而能够降低大尺寸显示器的电阻压降，以消除亮度均匀性不足的问题。
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是根据本发明有机发光二极管显示器的一优选实施例的一示意图。
图2是根据本发明有机发光二极管显示器的一优选实施例的盖板的一示意图。
图3是根据本发明有机发光二极管显示器的制造方法的一优选实施例的一流程图。
图4是根据本发明有机发光二极管显示器的一优选实施例的电极引线的一剖视图。
图5是根据本发明有机发光二极管显示器的一优选实施例的电极引线的一上视图。
以上对本发明实施例提供的液晶显示组件进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明。同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
请参照图1所示，为本发明有机发光二极管显示器的一优选实施例的一示意图。所述有机发光二极管显示器包括一基板21、一阳极导电层31、一阴极导电层32、一像素定义层4、一有机发光材料层5、一透明阴极层6、多个接触衬垫7、多个电极引线8、一盖板22及一框胶23，其中所述阳极导电层31、所述阴极导电层32、所述像素定义层4、所述有机发光材料层5及所述透明阴极层6构成一有机发光二极管器件(OLED器件)。本发明将于下文详细说明各实施例上述各组件的细部构造、组装关系及其运作原理。
续参照图1所示，所述框胶23具有一第一框体231及一第二框体232，所述第一框体231及所述第二框体232组合在所述基板21及所述盖板22之间，以形成一腔室20。
续参照图1所示，所述阳极导电层31及所述阴极导电层32形成在所述基板21上，而且所述阳极导电层31及所述阴极导电层32彼此相间隔，所述像素定义层4形成在所述基板21、所述阳极导电层31及所述阴极导电层32上，其中所述像素定义层4具有多个过孔41，而且所述多个过孔41曝露出部分所述阳极导电层31。
续参照图1所示，所述有机发光材料层5设置在所述过孔41中，所述透明阴极层6形成在所述阴极导电层32、所述像素定义层4及所述有机发光材料层4上，而且所述接触衬垫7形成在所述透明阴极层6上(图1仅绘示其中一个进行说明)。在本实施例中，所述电极引线8形成在所述盖板22上，每一电极引线8具有多个电极接触点81，而且所述电极接触点8分别与所述接触衬垫7电性连接。
续参照图1所示，进一步来说，每一所述接触衬垫7具有一薄层71及一隆起部72，所述薄层71形成在所述透明阴极层6上，所述隆起部72设置在所述薄层71上，而且所述隆起部72配置用以接触所述电极接触点81。在本实施例中，所述接触衬垫7的薄层71为一矩形，而且所述薄层71的至少一边长为10至30微米。
续参照图1及2所示，所述盖板22定义一密集区A1及一稀疏区A2，所述密集区A1位于所述盖板22的一中心，例如：一几何中心，所述稀疏区A2位于所述密集区A1的外围，其中位于所述密集区A1的所述电极接触点81的一排列密度大于位于所述稀疏区A2的所述电极接触点81的一排列密度。
如上所述，通过倒装芯片接合(Flip chip bonding)的方式将设有所述电极引线8的所述盖板22覆盖在形成有OLED器件的基板21的上方，用以将所述电极引线8与所述透明阴极层6连接起来，进而能够降低大尺寸显示器的电阻压降(IR-drop)，以消除亮度均匀性不足的问题。
请参照图3所示，为本发明有机发光二极管显示器的制造方法的一优选实施例的一流程图。所述制造方法包括一电极引线形成步骤S201、一导电层形成步骤S202、一像素定义层形成步骤S203、一有机发光材料层形成步骤S204、一透明阴极层形成步骤S205及一接触衬垫形成步骤S206。本发明将于下文详细说明各步骤的关系及其运作原理。
请参照图3并配合图4及5所示，在所述电极引线形成步骤S201中，先在一盖板22上形成图案化的一遮光层9，接着在所述遮光层9上进行金属油墨喷涂，以形成多个电极引线8，其中每一电极引线8具有多个电极接触点81。在本实施例中，所述电极引线8为一金属，所述金属为金、银、铝、铜或钯，所述遮光层9为一黑色有机树脂，而且所述黑色有机树脂是通过狭缝涂布、丝网打印、旋涂布、喷墨打印或流延而形成一有机薄膜，再经过曝光显影而形成图案化的所述遮光层。另外，所述遮光层9也可以为一黑色无机薄膜，其中所述黑色无机薄膜是通过喷溅、蒸镀、化学气相沉积或物理气相沉积而形成。而且所述黑色无机薄膜可以是金属氧化物或者硫化物，例如：氧化铜、氧化铁、二氧化锰、四氧化三铁、硫化钼或者硫化铜。
请参照图3并配合图1所示，在所述导电层形成步骤S202中，在一基板21上形成一阳极导电层31及一阴极导电层32，其中所述阳极导电层31及所述阴极导电层32之间形成一间隙。
续参照图3并配合图1所示，在所述像素定义层形成步骤S203中，在所述基板21、所述阳极导电层31及所述阴极导电层32上形成一像素定义层4，其中所述像素定义层4具有多个过孔41，而且所述过孔41曝露出部分所述阳极导电层31。
续参照图3并配合图1所示，在所述有机发光材料层形成步骤S204中，将一有机发光材料层5设置在所述过孔41中，使所述有机发光材料层5覆盖在所述过孔41曝露出部分所述阳极导电层31上。
续参照图3并配合图1所示，在所述透明阴极层形成步骤S205中，将一透明阴极层6形成在所述阴极导电层32、所述像素定义层4及所述有机发光材料层5上。
续参照图3并配合图1所示，在所述接触衬垫形成步骤S206中，在所述透明阴极层6上形成多个接触衬垫7，同时在一真空腔中将所述盖板22覆盖在所述基板21的上方，使得所述接触衬垫7分别与所述电极接触点81电性连接。在本实施例中，采用蒸镀形成图案化的所述多个接触衬垫7，其中所述接触衬垫7为一金属，所述金属为金、银、铝、铜或钯，而且所述接触衬垫7的一厚度为50至5000纳米。进一步来说，所述接触衬垫7设置在所述像素定义层4的上方，其中所述接触衬垫7具有一薄层71及一隆起部72，所述薄层71形成在所述透明阴极层6上，所述隆起部72设置在所述薄层71上，而且所述隆起部72配置用以接触所述电极接触点81。
通过倒装芯片接合(Flip chip bonding)的方式将设有所述电极引线8的所述盖板22覆盖在形成有OLED器件的基板21的上方，用以将所述电极引线8与所述透明阴极层6连接起来，进而能够降低大尺寸显示器的电阻压降(IR-drop)，以消除亮度均匀性不足的问题。
本发明已由上述相关实施例加以描述，然而上述实施例仅为实施本发明的范例。必需指出的是，已公开的实施例并未限制本发明的范围。相反地，包含于权利要求书的精神及范围的修改及均等设置均包括于本发明的范围内。
Claims (16)
- 一种有机发光二极管显示器的制造方法，其包括步骤：一电极引线形成步骤，在一盖板形成多个电极引线，而且每一电极引线具有多个电极接触点，其中所述电极引线为一金属，所述金属为金、银、铝、铜或钯；一导电层形成步骤，在一基板上形成一阳极导电层及一阴极导电层；一像素定义层形成步骤，在所述基板及所述阳极导电层上形成一像素定义层，其中所述像素定义层具有多个过孔，所述过孔曝露出部分所述阳极导电层；一有机发光材料层形成步骤，将一有机发光材料层设置在所述过孔中；一透明阴极层形成步骤，将一透明阴极层形成在所述阴极导电层、所述像素定义层及所述有机发光材料层上；一接触衬垫形成步骤，在所述透明阴极层上形成多个接触衬垫；及一盖板组合步骤，将所述盖板覆盖在所述基板的上方，使得所述接触衬垫分别与所述电极接触点电性连接。
- 如权利要求1所述的有机发光二极管显示器的制造方法，其中在所述电极引线形成步骤中，先在所述盖板上形成图案化的一遮光层，接着在所述遮光层上进行金属油墨喷涂，以形成所述多个电极引线。
- 如权利要求2所述的有机发光二极管显示器的制造方法，其中在所述电极引线形成步骤中，所述遮光层为一黑色有机树脂，而且所述黑色有机树脂是通过狭缝涂布、丝网打印、旋涂布、喷墨打印或流延而形成一有机薄膜，再经过曝光显影而形成图案化的所述遮光层。
- 如权利要求2所述的有机发光二极管显示器的制造方法，其中在所述电极引线形成步骤中，所述遮光层为一黑色无机薄膜，而且所述黑色无机薄膜是通过喷溅、蒸镀、化学气相沉积或物理气相沉积而形成。
- 如权利要求1所述的有机发光二极管显示器的制造方法，其中在所述接触衬垫形成步骤中，采用蒸镀形成图案化的所述多个接触衬垫，所述接触衬垫设置在所述像素定义层的上方。
- 如权利要求5所述的有机发光二极管显示器的制造方法，其中在所述接触衬垫形成步骤中，所述接触衬垫具有一薄层及一隆起部，所述薄层形成在所述透明阴极层上，所述隆起部设置在所述薄层上，而且所述隆起部配置用以接触所述电极接触点。
- 一种有机发光二极管显示器，其包括一基板、一阳极导电层、一阴极导电层、一像素定义层、一有机发光材料层、一透明阴极层、多个接触衬垫、多个电极引线、一盖板及一框胶；所述框胶组合在所述基板及所述盖板之间，以形成一腔室；所述阳极导电层及所述阴极导电层形成在所述基板上，所述像素定义层形成在所述基板及所述阳极导电层上，其中所述像素定义层具有多个过孔，所述过孔曝露出部分所述阳极导电层；所述有机发光材料层设置在所述过孔中，所述透明阴极层形成在所述阴极导电层、所述像素定义层及所述有机发光材料层上；所述接触衬垫形成在所述透明阴极层上，每一电极引线具有多个电极接触点，而且所述电极接触点分别与所述接触衬垫电性连接。
- 如权利要求7所述的有机发光二极管显示器，其中所述盖板定义一密集区及一稀疏区，所述密集区位于所述盖板的一中心，所述稀疏区位于所述密集区的外围，其中位于所述密集区的所述电极接触点的一排列密度大于位于所述稀疏区的所述电极接触点的一排列密度。
- 如权利要求7所述的有机发光二极管显示器，其中每一所述接触衬垫具有一薄层及一隆起部，所述薄层形成在所述透明阴极层上，所述隆起部设置在所述薄层上，而且所述隆起部配置用以接触所述电极接触点。
- 如权利要求9所述的有机发光二极管显示器，其中所述接触衬垫的薄层为一矩形，而且所述薄层的至少一边长为10至30微米。
- 一种有机发光二极管显示器的制造方法，其包括步骤：一电极引线形成步骤，在一盖板形成多个电极引线，而且每一电极引线具有多个电极接触点；一导电层形成步骤，在一基板上形成一阳极导电层及一阴极导电层；一像素定义层形成步骤，在所述基板及所述阳极导电层上形成一像素定义层，其中所述像素定义层具有多个过孔，所述过孔曝露出部分所述阳极导电层；一有机发光材料层形成步骤，将一有机发光材料层设置在所述过孔中；一透明阴极层形成步骤，将一透明阴极层形成在所述阴极导电层、所述像素定义层及所述有机发光材料层上；一接触衬垫形成步骤，在所述透明阴极层上形成多个接触衬垫；及一盖板组合步骤，将所述盖板覆盖在所述基板的上方，使得所述接触衬垫分别与所述电极接触点电性连接。
- 如权利要求11所述的有机发光二极管显示器的制造方法，其中在所述电极引线形成步骤中，先在所述盖板上形成图案化的一遮光层，接着在所述遮光层上进行金属油墨喷涂，以形成所述多个电极引线。
- 如权利要求12所述的有机发光二极管显示器的制造方法，其中在所述电极引线形成步骤中，所述遮光层为一黑色有机树脂，而且所述黑色有机树脂是通过狭缝涂布、丝网打印、旋涂布、喷墨打印或流延而形成一有机薄膜，再经过曝光显影而形成图案化的所述遮光层。
- 如权利要求12所述的有机发光二极管显示器的制造方法，其中在所述电极引线形成步骤中，所述遮光层为一黑色无机薄膜，而且所述黑色无机薄膜是通过喷溅、蒸镀、化学气相沉积或物理气相沉积而形成。
- 如权利要求11所述的有机发光二极管显示器的制造方法，其中在所述接触衬垫形成步骤中，采用蒸镀形成图案化的所述多个接触衬垫，所述接触衬垫设置在所述像素定义层的上方。
- 如权利要求15所述的有机发光二极管显示器的制造方法，其中在所述接触衬垫形成步骤中，所述接触衬垫具有一薄层及一隆起部，所述薄层形成在所述透明阴极层上，所述隆起部设置在所述薄层上，而且所述隆起部配置用以接触所述电极接触点。
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| CN103022049A (zh) * | 2012-12-12 | 2013-04-03 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
| CN104934461A (zh) * | 2014-03-18 | 2015-09-23 | 三星显示有限公司 | 有机发光二极管显示器 |
| CN106505072A (zh) * | 2016-10-31 | 2017-03-15 | 昆山工研院新型平板显示技术中心有限公司 | 柔性显示面板及柔性显示装置 |
| CN106803547A (zh) * | 2017-02-15 | 2017-06-06 | 深圳市华星光电技术有限公司 | 顶发射型oled显示器件的制作方法及结构 |
| US20170288000A1 (en) * | 2015-03-09 | 2017-10-05 | Shenzhen China Star Optoelectronics Technology Co. , Ltd. | Pixel structure having high aperture ratio and circuit |
-
2018
- 2018-12-26 CN CN201811601193.0A patent/CN109742101B/zh active Active
-
2019
- 2019-04-10 WO PCT/CN2019/082120 patent/WO2020133800A1/zh not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103022049A (zh) * | 2012-12-12 | 2013-04-03 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
| CN104934461A (zh) * | 2014-03-18 | 2015-09-23 | 三星显示有限公司 | 有机发光二极管显示器 |
| US20170288000A1 (en) * | 2015-03-09 | 2017-10-05 | Shenzhen China Star Optoelectronics Technology Co. , Ltd. | Pixel structure having high aperture ratio and circuit |
| CN106505072A (zh) * | 2016-10-31 | 2017-03-15 | 昆山工研院新型平板显示技术中心有限公司 | 柔性显示面板及柔性显示装置 |
| CN106803547A (zh) * | 2017-02-15 | 2017-06-06 | 深圳市华星光电技术有限公司 | 顶发射型oled显示器件的制作方法及结构 |
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| CN109742101A (zh) | 2019-05-10 |
| CN109742101B (zh) | 2020-06-30 |
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