WO2020133714A1 - Display panel and display module, and electronic device - Google Patents

Display panel and display module, and electronic device Download PDF

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Publication number
WO2020133714A1
WO2020133714A1 PCT/CN2019/077909 CN2019077909W WO2020133714A1 WO 2020133714 A1 WO2020133714 A1 WO 2020133714A1 CN 2019077909 W CN2019077909 W CN 2019077909W WO 2020133714 A1 WO2020133714 A1 WO 2020133714A1
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WO
WIPO (PCT)
Prior art keywords
electrode
layer
insulating layer
display panel
film transistor
Prior art date
Application number
PCT/CN2019/077909
Other languages
French (fr)
Chinese (zh)
Inventor
范英春
张晓星
Original Assignee
深圳市华星光电半导体显示技术有限公司
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Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Publication of WO2020133714A1 publication Critical patent/WO2020133714A1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors

Definitions

  • the present application relates to the field of display, in particular to a display panel, a display module, and an electronic device.
  • OLED Organic Light-Emitting Diode
  • the present application provides a display panel, a display module, and an electronic device to solve the technical problem of low opening ratio of the existing display panel.
  • This application provides a display panel, which includes:
  • An array substrate including a substrate, and thin film transistor units and storage capacitors on the substrate;
  • the orthographic projection surface of the storage capacitor on the light emitting device layer partially overlaps with the light emitting device layer
  • the structure of the film layer in the storage capacitor is made of a transparent material.
  • the storage capacitor includes a first electrode on the substrate, a multilayer insulating layer on the first electrode, and a fourth electrode on the multilayer insulating layer;
  • the first electrode, the fourth electrode, and the multilayer insulating layer are made of transparent materials.
  • the first electrode and the light shielding layer in the thin film transistor unit are arranged in the same layer;
  • the fourth electrode is arranged in the same layer as the source and drain in the thin film transistor unit;
  • the fourth electrode is electrically connected to the source and drain of the thin film transistor unit
  • the first electrode and the fourth electrode form the storage capacitor of the display panel.
  • the display panel further includes a first via
  • the first via is located on the fourth electrode
  • the anode layer in the light emitting device layer is electrically connected to the fourth electrode through the first via hole.
  • the display panel further includes a first via
  • the first via is located on the source and drain
  • the anode layer in the light emitting device layer is electrically connected to the source and drain through the first via.
  • the storage capacitor includes a first electrode on the substrate, a first insulating layer on the first electrode, a second electrode on the first insulating layer, and a second electrode on the second electrode Three insulating layers and a fourth electrode on the third insulating layer;
  • the first electrode, the second electrode, the fourth electrode, the first insulating layer, and the third insulating layer are made of transparent materials.
  • the first electrode and the light shielding layer in the thin film transistor unit are arranged in the same layer;
  • the second electrode is arranged in the same layer as the active layer in the thin film transistor unit;
  • the fourth electrode is arranged in the same layer as the source and drain in the thin film transistor unit;
  • the fourth electrode is electrically connected to the source and drain of the thin film transistor unit.
  • the first electrode and the light shielding layer in the thin film transistor unit are arranged in the same layer;
  • the second electrode and the gate in the thin film transistor unit are arranged in the same layer;
  • the fourth electrode is arranged in the same layer as the source and drain in the thin film transistor unit;
  • the fourth electrode is electrically connected to the source and drain of the thin film transistor unit.
  • the first electrode and the second electrode form a first capacitor of the display panel
  • the second electrode and the fourth electrode form a second capacitor of the display panel.
  • the storage capacitor includes a first electrode on the substrate, a first insulating layer on the first electrode, a second electrode on the first insulating layer, and a second electrode on the second electrode Two insulating layers, and a third electrode on the second insulating layer, a third insulating layer on the third electrode, and a fourth electrode on the third insulating layer;
  • the first electrode, the second electrode, the third electrode, the fourth electrode, the first insulating layer, the second insulating layer, and the third insulating layer are made of a transparent material.
  • the first electrode and the light shielding layer in the thin film transistor unit are arranged in the same layer;
  • the second electrode is arranged in the same layer as the active layer in the thin film transistor unit;
  • the third electrode and the gate in the thin film transistor unit are arranged in the same layer;
  • the fourth electrode is arranged in the same layer as the source and drain in the thin film transistor unit;
  • the fourth electrode is electrically connected to the source and drain of the thin film transistor unit.
  • the first electrode and the second electrode form a first capacitor of the display panel
  • the second electrode and the third electrode form a second capacitor of the display panel
  • the third electrode and the fourth electrode form a third capacitor of the display panel.
  • the present application also proposes a display module, wherein the display module includes a display panel, a polarizing layer and a cover layer on the display panel,
  • the display panel includes:
  • An array substrate including a substrate, and thin film transistor units and storage capacitors on the substrate;
  • the orthographic projection surface of the storage capacitor on the light emitting device layer partially overlaps with the light emitting device layer
  • the structure of the film layer in the storage capacitor is made of a transparent material.
  • the storage capacitor includes a first electrode on the substrate, a multilayer insulating layer on the first electrode, and a fourth electrode on the multilayer insulating layer;
  • the first electrode, the fourth electrode, and the multilayer insulating layer are made of transparent materials.
  • the storage capacitor includes a first electrode on the substrate, a first insulating layer on the first electrode, a second electrode on the first insulating layer, and a second electrode on the second electrode Three insulating layers and a fourth electrode on the third insulating layer;
  • the first electrode, the second electrode, the fourth electrode, the first insulating layer, and the third insulating layer are made of transparent materials.
  • the storage capacitor includes a first electrode on the substrate, a first insulating layer on the first electrode, a second electrode on the first insulating layer, and a second electrode on the second electrode Two insulating layers, and a third electrode on the second insulating layer, a third insulating layer on the third electrode, and a fourth electrode on the third insulating layer;
  • the first electrode, the second electrode, the third electrode, the fourth electrode, the first insulating layer, the second insulating layer, and the third insulating layer are made of a transparent material.
  • This application also proposes an electronic device, wherein,
  • the electronic device includes a display module.
  • the display module includes a display panel and a polarizing layer and a cover layer on the display panel.
  • the display panel includes:
  • An array substrate including a substrate, and thin film transistor units and storage capacitors on the substrate;
  • the orthographic projection surface of the storage capacitor on the light emitting device layer partially overlaps with the light emitting device layer
  • the structure of the film layer in the storage capacitor is made of a transparent material.
  • the storage capacitor includes a first electrode on the substrate, a multilayer insulating layer on the first electrode, and a fourth electrode on the multilayer insulating layer;
  • the first electrode, the fourth electrode, and the multilayer insulating layer are made of transparent materials.
  • the storage capacitor includes a first electrode on the substrate, a first insulating layer on the first electrode, a second electrode on the first insulating layer, and a second electrode on the second electrode Three insulating layers and a fourth electrode on the third insulating layer;
  • the first electrode, the second electrode, the fourth electrode, the first insulating layer, and the third insulating layer are made of transparent materials.
  • the storage capacitor includes a first electrode on the substrate, a first insulating layer on the first electrode, a second electrode on the first insulating layer, and a second electrode on the second electrode Two insulating layers, and a third electrode on the second insulating layer, a third insulating layer on the third electrode, and a fourth electrode on the third insulating layer;
  • the first electrode, the second electrode, the third electrode, the fourth electrode, the first insulating layer, the second insulating layer, and the third insulating layer are made of a transparent material.
  • the present application uses transparent materials to fabricate the storage capacitor area of the array substrate, and a light-emitting device layer is provided on the storage capacitor to increase the aperture ratio of the display panel and improve the display effect of the display panel.
  • Figure 1 is the first structural diagram of the display panel of this application.
  • FIG. 2 is a second structural diagram of the display panel of the present application.
  • FIG. 3 is a third structural diagram of the display panel of this application.
  • FIG. 4 is a fourth structural diagram of the display panel of the present application.
  • 5 is a fifth structural diagram of the display panel of the present application.
  • FIG. 1 is the first structural diagram of the display panel of the present application.
  • the display panel 100 includes:
  • An array substrate including a substrate 101, a thin film transistor layer 200 on the substrate 101, and a light emitting device layer 300 on the thin film transistor layer 200.
  • the thin film transistor layer 200 includes a thin film transistor unit 10, a storage capacitor 20, and a switch unit (not shown).
  • the light-opening unit is not specifically discussed in this application.
  • the orthographic projection surface of the storage capacitor 20 on the light emitting device layer 300 partially overlaps with the light emitting device layer 300.
  • the film structure in the storage capacitor 20 is made of a transparent material.
  • the raw material of the substrate 101 may be one of a glass substrate, a quartz substrate, a resin substrate, and the like.
  • the substrate 101 may also be a flexible substrate.
  • the material of the flexible substrate may be PI (polyimide).
  • the thin film transistor unit 10 includes an ESL (etch barrier layer type), BCE (back channel etch type) or Top-gate (top gate thin film transistor type) structure, which is not specifically limited. This application takes the top gate thin film transistor type as an example for description.
  • the thin film transistor unit 10 includes a light-shielding layer 102, a buffer layer 103, an active layer 104, a gate insulating layer 105, a gate 106, an inter-insulating layer 107, a source and drain 108, a passivation layer 109, and a planarization layer 110.
  • the light-shielding layer 102 is formed on the substrate 101 and is mainly used to block the light source for the thin film transistor unit 10 and affect the driving effect of the thin film transistor.
  • the buffer layer 103 is formed on the light-shielding layer 102 and is mainly used to buffer the pressure between the layer structures of the film, and may also have a certain function of blocking water and oxygen.
  • the active layer 104 is formed on the buffer layer 103.
  • the active layer 104 includes ion-doped doped regions (not shown).
  • the material of the active layer 104 may be indium gallium zinc oxide (IGZO), which is a conductive semiconductor, and also a transparent material.
  • IGZO indium gallium zinc oxide
  • the gate insulating layer 105 is formed on the active layer 104.
  • the gate insulating layer 105 covers the active layer 104.
  • the interlayer insulating layer 107 is used to isolate the active layer 104 from other metal layers.
  • the gate 106 is formed on the gate insulating layer 105.
  • the metal material of the gate 105 may generally be a metal such as molybdenum, aluminum, aluminum-nickel alloy, molybdenum-tungsten alloy, chromium, or copper, or a combination of the foregoing metal materials.
  • the metal material of the gate 106 may be molybdenum.
  • the interlayer insulating layer 107 is formed on the gate 106.
  • the interlayer insulating layer 107 covers the gate 106.
  • the interlayer insulating layer 107 is mainly used to isolate the gate 106 from the source and drain 108;
  • the source and drain 108 are formed on the inter-insulating layer 107.
  • the metal material of the source and drain 108 may generally be molybdenum, aluminum, aluminum-nickel alloy, molybdenum-tungsten alloy, chromium, copper, or titanium aluminum alloy, or a combination of the foregoing metal materials.
  • the source and drain 108 are electrically connected to the doped region on the active layer 104 through the second via 115.
  • the metal material of the source and drain 108 may be titanium aluminum titanium.
  • the passivation layer 109 and the planarization layer 110 are formed on the source and drain 108.
  • the passivation layer 109 is used to ensure the flatness of the thin film transistor process.
  • the light emitting device layer includes an anode layer 111, a light emitting layer 112, and a cathode layer 113 formed on the array substrate;
  • the anode layer 111 is formed on the flat layer 110.
  • the anode layer 111 is mainly used to provide holes for absorbing electrons.
  • the light emitting device is a bottom-emission type OLED device, so the image anode layer 111 is a transparent metal electrode.
  • the material of the anode layer 111 may be indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO) ) Or at least one of zinc oxide aluminum (AZO);
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • ZnO zinc oxide
  • In2O3 indium oxide
  • IGO indium gallium oxide
  • AZO zinc oxide aluminum
  • the light emitting layer 112 is formed on the anode layer 111.
  • the light-emitting layer 112 is divided into a plurality of light-emitting units by the pixel definition layer 114.
  • the cathode layer 113 is formed on the light-emitting layer 112.
  • the cathode layer 113 covers the light-emitting layer 112 and the pixel definition layer 114 on the array substrate.
  • the cathode layer 113 may be a non-transparent material or a transparent material.
  • the cathode layer 113 is a non-transparent material, light generated by the light-emitting layer 112 passes through the cathode layer 113 and is projected toward the substrate 101.
  • a reflective layer may be provided on the cathode layer 113 so that the light transmitted through the cathode layer 113 is projected toward the substrate 101.
  • the storage capacitor 20 includes a first electrode 201 on the substrate 101, a multilayer insulating layer on the first electrode 201, and a fourth electrode 207 on the multilayer insulating layer .
  • the first electrode 201, the fourth electrode 207, and the multilayer insulating layer are made of a transparent material.
  • the first electrode 201 and the light shielding layer 102 in the thin film transistor unit 10 are disposed in the same layer.
  • the first electrode 201 and the light shielding layer 102 are formed in different mask processes.
  • the fourth electrode 207 and the source and drain 108 in the thin film transistor unit 10 are disposed in the same layer.
  • the fourth electrode 207 is electrically connected to the source and drain 108 of the thin film transistor unit 10.
  • the fourth electrode 207 and the source/drain 108 are formed in different mask processes.
  • the first electrode 201 and the fourth electrode 207 form the storage capacitor 20 of the display panel 100.
  • the multilayer insulation layer is the buffer layer 103 and the interlayer insulation layer 107 in the thin film transistor unit 10.
  • the storage capacitor 20 further includes a third via 208.
  • the first electrode 201 is electrically connected to the fourth electrode 207 through the third via 208.
  • the third via 208 penetrates the inter-insulation layer 107 and the buffer layer 103.
  • the thin film transistor unit 10 Since the thin film transistor unit 10 is affected by light and reduces the performance of the thin film transistor, the thin film transistor unit 10 needs to be provided with a light shielding layer 102 to prevent the influence of the external light source on the thin film transistor unit 10.
  • the first electrode 201, the second electrode 203, and the buffer layer 103 between the first electrode 201 and the second electrode 203 are
  • the inter-insulation layer 107 is made of transparent material.
  • the display panel 100 further includes a first via 116.
  • the first via 116 is located on the fourth electrode 207.
  • the anode layer 111 in the light emitting device layer 300 is electrically connected to the fourth electrode 207 through the first via 116.
  • FIG. 2 is a second structural diagram of the display panel 100 of the present application.
  • the first via 116 is located on the source and drain 108.
  • the anode layer 111 in the light emitting device layer 300 is electrically connected to the source and drain 108 through the first via 116.
  • FIG. 3 is a third structural diagram of the display panel 100 of the present application.
  • the storage capacitor 20 includes a first electrode 201 on the substrate 101, a first insulating layer 202 on the first electrode 201, a second electrode 203 on the first insulating layer 202, The second insulating layer 204 on the second electrode 203 and the fourth electrode 207 on the second insulating layer 204.
  • the first electrode 201, the second electrode 203, the fourth electrode 207, the first insulating layer 202, and the second insulating layer 204 are made of a transparent material.
  • the first electrode 201 and the light shielding layer 102 in the thin film transistor unit 10 are disposed in the same layer.
  • the structure of the first electrode 201 is the same as that in FIGS. 1 and 2, and details are not described in detail.
  • the second electrode 203 is disposed in the same layer as the active layer 104 in the thin film transistor unit 10.
  • the second electrode 203 and the active layer 104 are formed in the same photomask process.
  • the material of the second electrode 203 and the active layer 104 are the same.
  • the material of the second electrode 203 is indium gallium zinc oxide (IGZO).
  • the first insulating layer 202 and the buffer layer 103 are disposed in the same layer.
  • the first insulating layer 202 and the buffer layer 103 are formed in the same photomask process.
  • the second insulating layer 204 and the inter-insulating layer 107 are provided in the same layer.
  • the second insulating layer 204 and the inter-insulating layer 107 are formed in the same mask process.
  • the fourth electrode 207 and the source and drain 108 in the thin film transistor unit 10 are disposed in the same layer.
  • the fourth electrode 207 is electrically connected to the source and drain 108 of the thin film transistor unit 10.
  • the structure of the fourth electrode 207 is the same as FIG. 1 and FIG. 2, and the details are not described in detail.
  • the first electrode 201 and the second electrode 203 form a first capacitor of the display panel 100.
  • the second electrode 203 and the fourth electrode 207 form a second capacitor of the display panel 100.
  • the first capacitor and the second capacitor are arranged in parallel to increase the capacitance of the storage capacitor 20 of the display panel 100, which can meet the panel's demand for high capacitance at high resolution.
  • the configuration of the first via 116 is the same as that in FIGS. 1 and 2, and details are not described in detail.
  • FIG. 4 is a fourth structural diagram of the display panel 100 of the present application.
  • This embodiment is the same as or similar to that in FIG. 3, except for:
  • the second electrode 203 is provided in the same layer as the gate electrode 106 in the thin film transistor unit 10.
  • the second electrode 203 and the gate electrode 106 are formed in the same photomask process.
  • the display panel 100 further includes a first via 116.
  • connection method of the first via 116 is the same as that in FIG. 1 and FIG. 2, and details are not described in detail.
  • FIG. 5 is a fifth structural diagram of the display panel 100 of the present application.
  • the storage capacitor 20 includes a first electrode 201 on the substrate 101, a first insulating layer 202 on the first electrode 201, a second electrode 203 on the first insulating layer 202, A second insulating layer 204 on the second electrode 203, a third electrode 205 on the second insulating layer 204, a third insulating layer 206 on the third electrode 205, and a third insulating layer
  • the fourth electrode 207 on the insulating layer 206.
  • the first electrode 201, the second electrode 203, the third electrode 205, the fourth electrode 207, the first insulating layer 202, the second insulating layer 204, and the third insulating layer 206 is made of transparent material.
  • the first electrode 201 and the light shielding layer 102 in the thin film transistor unit 10 are disposed in the same layer.
  • the second electrode 203 is disposed in the same layer as the active layer 104 in the thin film transistor unit 10.
  • the third electrode 205 and the gate electrode 106 in the thin film transistor unit 10 are disposed in the same layer.
  • the fourth electrode 207 and the source and drain 108 in the thin film transistor unit 10 are disposed in the same layer.
  • the fourth electrode 207 is electrically connected to the source and drain 108 of the thin film transistor unit 10.
  • the first electrode 201 and the second electrode 203 form a first capacitor of the display panel 100.
  • the second electrode 203 and the third electrode 205 form a second capacitor of the display panel 100.
  • the third electrode 205 and the fourth electrode 207 form a third capacitor of the display panel 100.
  • the first capacitor, the second capacitor, and the third capacitor are arranged in parallel to increase the capacitance of the storage capacitor 20 of the display panel 100, which can meet the panel's demand for high capacitance at high resolution.
  • the storage capacitor 20 located under the opening area of the display panel 100 is made of a transparent material.
  • the light emitted by the light emitting layer located in the opening area passes through the storage capacitor 20 and enters the outside world.
  • the opening area corresponding to the storage capacitor 20 is increased, the opening ratio of the display panel 100 is increased, and the display effect of the display panel 100 is improved.
  • any two or three of the first electrode 201, the second electrode 203, the third electrode 205, and the fourth electrode 207 may be combined to form the storage capacitor 20, Such embodiments will not be repeated in this application.
  • the present application also proposes a display module including the above-mentioned display panel, and a polarizing layer and a cover layer on the display panel.
  • the working principle of the display module is the same as or similar to that of the display panel, and the details are not repeated here.
  • the present application also proposes an electronic device including the above display and display module.
  • the working principle of the electronic device is the same as or the same as that of the display module, and the details are not repeated here.
  • the electronic device includes but is not limited to mobile phones, tablet computers, computer monitors, game consoles, televisions, display screens, wearable devices, and other household appliances or household appliances with display functions.
  • the present application proposes a display panel, a display module, and an electronic device.
  • the display panel includes an array substrate, including a substrate, and a thin film transistor unit and a storage capacitor on the substrate; a light emitting device on the array substrate
  • the storage capacitor has an orthographic projection surface on the light-emitting device layer partially overlapping with the light-emitting device layer; the structure of the film layer in the storage capacitor is made of a transparent material.
  • the present application uses transparent materials to fabricate the storage capacitor area of the array substrate, and a light-emitting device layer is provided on the storage capacitor to increase the aperture ratio of the display panel and improve the display effect of the display panel.

Abstract

A display panel and a display module, and an electronic device. The display panel (100) comprises: an array substrate, comprising a substrate (101), and a thin-film transistor unit (10) and a storage capacitor (20) located on the substrate (101); and a light-emitting device layer (300) located on the array substrate, the orthographic projection plane of the storage capacitor (20) on the light-emitting device layer (300) partially overlapping the light-emitting device layer (300), and the film structure in the storage capacitor (20) being made of a transparent material.

Description

显示面板及显示模组、电子装置Display panel and display module, electronic device 技术领域Technical field
本申请涉及显示领域，特别涉及一种显示面板及显示模组、电子装置。The present application relates to the field of display, in particular to a display panel, a display module, and an electronic device.
背景技术Background technique
在平板显示技术中，有机发光二极管（Organic Light-Emitting Diode，OLED）显示器具有轻薄、主动发光、响应速度快、可视角大、色域宽、亮度高和功耗低等众多优点，逐渐成为继液晶显示器后的第三代显示技术。In flat panel display technology, Organic Light-Emitting Diode (OLED) displays have many advantages, such as light and thin, active light emission, fast response speed, large viewing angle, wide color gamut, high brightness and low power consumption, etc. The third generation display technology behind the LCD.
随着显示面板的发展，对于底发光型OLED显示面板，阵列基板中的开关单元、薄膜晶体管单元及存储电容的存在，导致像素单元中开口率的限制，满足不了目前高分辨率显示面板的需求。With the development of display panels, for bottom-emitting OLED display panels, the presence of switch units, thin film transistor units, and storage capacitors in the array substrate has led to the limitation of the aperture ratio in the pixel unit, which cannot meet the needs of current high-resolution display panels .
因此，目前亟需一种显示面板以解决上述问题。Therefore, there is an urgent need for a display panel to solve the above problems.
技术问题technical problem
本申请提供一种显示面板及显示模组、电子装置，以解决现有显示面板开口率较低的技术问题。The present application provides a display panel, a display module, and an electronic device to solve the technical problem of low opening ratio of the existing display panel.
技术解决方案Technical solution
本申请提供了一种显示面板，其包括：This application provides a display panel, which includes:
阵列基板，包括基板、及位于所述基板上的薄膜晶体管单元和存储电容；An array substrate, including a substrate, and thin film transistor units and storage capacitors on the substrate;
位于所述阵列基板上的发光器件层；A light emitting device layer on the array substrate;
所述存储电容在所述发光器件层上正投影面与所述发光器件层部分重合；The orthographic projection surface of the storage capacitor on the light emitting device layer partially overlaps with the light emitting device layer;
其中，所述存储电容内的膜层结构由透明材料制成。Wherein, the structure of the film layer in the storage capacitor is made of a transparent material.
在本申请的显示面板中，In the display panel of this application,
所述存储电容包括位于所述基板上的第一电极、位于所述第一电极上的多层绝缘层、位于所述多层绝缘层上的第四电极；The storage capacitor includes a first electrode on the substrate, a multilayer insulating layer on the first electrode, and a fourth electrode on the multilayer insulating layer;
其中，所述第一电极、所述第四电极、及所述多层绝缘层由透明材料制成。Wherein, the first electrode, the fourth electrode, and the multilayer insulating layer are made of transparent materials.
在本申请的显示面板中，In the display panel of this application,
所述第一电极与所述薄膜晶体管单元中的遮光层同层设置；The first electrode and the light shielding layer in the thin film transistor unit are arranged in the same layer;
所述第四电极与所述薄膜晶体管单元中的源漏极同层设置；The fourth electrode is arranged in the same layer as the source and drain in the thin film transistor unit;
所述第四电极与所述薄膜晶体管单元的所述源漏极电连接；The fourth electrode is electrically connected to the source and drain of the thin film transistor unit;
所述第一电极、所述第四电极形成所述显示面板的所述存储电容。The first electrode and the fourth electrode form the storage capacitor of the display panel.
在本申请的显示面板中，In the display panel of this application,
所述显示面板还包括第一过孔；The display panel further includes a first via;
所述第一过孔位于所述第四电极上；The first via is located on the fourth electrode;
所述发光器件层中的阳极层通过所述第一过孔与所述第四电极电连接。The anode layer in the light emitting device layer is electrically connected to the fourth electrode through the first via hole.
在本申请的显示面板中，In the display panel of this application,
所述显示面板还包括第一过孔；The display panel further includes a first via;
所述第一过孔位于所述源漏极上；The first via is located on the source and drain;
所述发光器件层中的阳极层通过所述第一过孔与所述源漏极电连接。The anode layer in the light emitting device layer is electrically connected to the source and drain through the first via.
在本申请的显示面板中，In the display panel of this application,
所述存储电容包括位于所述基板上的第一电极、位于所述第一电极上的第一绝缘层、位于所述第一绝缘层上的第二电极、位于所述第二电极上的第三绝缘层、及位于所述第三绝缘层上的第四电极；The storage capacitor includes a first electrode on the substrate, a first insulating layer on the first electrode, a second electrode on the first insulating layer, and a second electrode on the second electrode Three insulating layers and a fourth electrode on the third insulating layer;
其中，所述第一电极、所述第二电极、所述第四电极、所述第一绝缘层、及第三绝缘层由透明材料制成。Wherein, the first electrode, the second electrode, the fourth electrode, the first insulating layer, and the third insulating layer are made of transparent materials.
在本申请的显示面板中，In the display panel of this application,
所述第一电极与所述薄膜晶体管单元中的遮光层同层设置；The first electrode and the light shielding layer in the thin film transistor unit are arranged in the same layer;
所述第二电极与所述薄膜晶体管单元中的有源层同层设置；The second electrode is arranged in the same layer as the active layer in the thin film transistor unit;
所述第四电极与所述薄膜晶体管单元中的源漏极同层设置；The fourth electrode is arranged in the same layer as the source and drain in the thin film transistor unit;
所述第四电极与所述薄膜晶体管单元的所述源漏极电连接。The fourth electrode is electrically connected to the source and drain of the thin film transistor unit.
在本申请的显示面板中，In the display panel of this application,
所述第一电极与所述薄膜晶体管单元中的遮光层同层设置；The first electrode and the light shielding layer in the thin film transistor unit are arranged in the same layer;
所述第二电极与所述薄膜晶体管单元中的栅极同层设置；The second electrode and the gate in the thin film transistor unit are arranged in the same layer;
所述第四电极与所述薄膜晶体管单元中的源漏极同层设置；The fourth electrode is arranged in the same layer as the source and drain in the thin film transistor unit;
所述第四电极与所述薄膜晶体管单元的所述源漏极电连接。The fourth electrode is electrically connected to the source and drain of the thin film transistor unit.
在本申请的显示面板中，In the display panel of this application,
所述第一电极、所述第二电极形成所述显示面板的第一电容，The first electrode and the second electrode form a first capacitor of the display panel,
所述第二电极、所述第四电极形成所述显示面板的第二电容。The second electrode and the fourth electrode form a second capacitor of the display panel.
在本申请的显示面板中，In the display panel of this application,
所述存储电容包括位于所述基板上的第一电极、位于所述第一电极上的第一绝缘层、位于所述第一绝缘层上的第二电极、位于所述第二电极上的第二绝缘层、及位于所述第二绝缘层上的第三电极、位于所述第三电极上的第三绝缘层、及位于所述第三绝缘层上的第四电极；The storage capacitor includes a first electrode on the substrate, a first insulating layer on the first electrode, a second electrode on the first insulating layer, and a second electrode on the second electrode Two insulating layers, and a third electrode on the second insulating layer, a third insulating layer on the third electrode, and a fourth electrode on the third insulating layer;
其中，所述第一电极、所述第二电极、第三电极、所述第四电极、第一绝缘层、第二绝缘层、及第三绝缘层由透明材料制成。Wherein, the first electrode, the second electrode, the third electrode, the fourth electrode, the first insulating layer, the second insulating layer, and the third insulating layer are made of a transparent material.
在本申请的显示面板中，In the display panel of this application,
所述第一电极与所述薄膜晶体管单元中的遮光层同层设置；The first electrode and the light shielding layer in the thin film transistor unit are arranged in the same layer;
所述第二电极与所述薄膜晶体管单元中的有源层同层设置；The second electrode is arranged in the same layer as the active layer in the thin film transistor unit;
所述第三电极与所述薄膜晶体管单元中的栅极同层设置；The third electrode and the gate in the thin film transistor unit are arranged in the same layer;
所述第四电极与所述薄膜晶体管单元中的源漏极同层设置；The fourth electrode is arranged in the same layer as the source and drain in the thin film transistor unit;
所述第四电极与所述薄膜晶体管单元的所述源漏极电连接。The fourth electrode is electrically connected to the source and drain of the thin film transistor unit.
在本申请的显示面板中，In the display panel of this application,
所述第一电极、所述第二电极形成所述显示面板的第一电容；The first electrode and the second electrode form a first capacitor of the display panel;
所述第二电极、所述第三电极形成所述显示面板的第二电容；The second electrode and the third electrode form a second capacitor of the display panel;
所述第三电极、所述第四电极形成所述显示面板的第三电容。The third electrode and the fourth electrode form a third capacitor of the display panel.
本申请还提出了一种显示模组，其中，所述显示模组包括显示面板及位于所述显示面板的偏光层、盖板层，The present application also proposes a display module, wherein the display module includes a display panel, a polarizing layer and a cover layer on the display panel,
所述显示面板包括：The display panel includes:
阵列基板，包括基板、及位于所述基板上的薄膜晶体管单元和存储电容；An array substrate, including a substrate, and thin film transistor units and storage capacitors on the substrate;
位于所述阵列基板上的发光器件层；A light emitting device layer on the array substrate;
所述存储电容在所述发光器件层上正投影面与所述发光器件层部分重合；The orthographic projection surface of the storage capacitor on the light emitting device layer partially overlaps with the light emitting device layer;
其中，所述存储电容内的膜层结构由透明材料制成。Wherein, the structure of the film layer in the storage capacitor is made of a transparent material.
在本申请的显示模组中，In the display module of this application,
所述存储电容包括位于所述基板上的第一电极、位于所述第一电极上的多层绝缘层、位于所述多层绝缘层上的第四电极；The storage capacitor includes a first electrode on the substrate, a multilayer insulating layer on the first electrode, and a fourth electrode on the multilayer insulating layer;
其中，所述第一电极、所述第四电极、及所述多层绝缘层由透明材料制成。Wherein, the first electrode, the fourth electrode, and the multilayer insulating layer are made of transparent materials.
在本申请的显示模组中，In the display module of this application,
所述存储电容包括位于所述基板上的第一电极、位于所述第一电极上的第一绝缘层、位于所述第一绝缘层上的第二电极、位于所述第二电极上的第三绝缘层、及位于所述第三绝缘层上的第四电极；The storage capacitor includes a first electrode on the substrate, a first insulating layer on the first electrode, a second electrode on the first insulating layer, and a second electrode on the second electrode Three insulating layers and a fourth electrode on the third insulating layer;
其中，所述第一电极、所述第二电极、所述第四电极、所述第一绝缘层、及第三绝缘层由透明材料制成。Wherein, the first electrode, the second electrode, the fourth electrode, the first insulating layer, and the third insulating layer are made of transparent materials.
在本申请的显示模组中，In the display module of this application,
所述存储电容包括位于所述基板上的第一电极、位于所述第一电极上的第一绝缘层、位于所述第一绝缘层上的第二电极、位于所述第二电极上的第二绝缘层、及位于所述第二绝缘层上的第三电极、位于所述第三电极上的第三绝缘层、及位于所述第三绝缘层上的第四电极；The storage capacitor includes a first electrode on the substrate, a first insulating layer on the first electrode, a second electrode on the first insulating layer, and a second electrode on the second electrode Two insulating layers, and a third electrode on the second insulating layer, a third insulating layer on the third electrode, and a fourth electrode on the third insulating layer;
其中，所述第一电极、所述第二电极、第三电极、所述第四电极、第一绝缘层、第二绝缘层、及第三绝缘层由透明材料制成。Wherein, the first electrode, the second electrode, the third electrode, the fourth electrode, the first insulating layer, the second insulating layer, and the third insulating layer are made of a transparent material.
本申请还提出了一种电子装置，其中，This application also proposes an electronic device, wherein,
所述电子装置包括显示模组，所述显示模组包括显示面板及位于所述显示面板的偏光层、盖板层，所述显示面板包括：The electronic device includes a display module. The display module includes a display panel and a polarizing layer and a cover layer on the display panel. The display panel includes:
阵列基板，包括基板、及位于所述基板上的薄膜晶体管单元和存储电容；An array substrate, including a substrate, and thin film transistor units and storage capacitors on the substrate;
位于所述阵列基板上的发光器件层；A light emitting device layer on the array substrate;
所述存储电容在所述发光器件层上正投影面与所述发光器件层部分重合；The orthographic projection surface of the storage capacitor on the light emitting device layer partially overlaps with the light emitting device layer;
其中，所述存储电容内的膜层结构由透明材料制成。Wherein, the structure of the film layer in the storage capacitor is made of a transparent material.
在本申请的电子装置中，In the electronic device of the present application,
所述存储电容包括位于所述基板上的第一电极、位于所述第一电极上的多层绝缘层、位于所述多层绝缘层上的第四电极；The storage capacitor includes a first electrode on the substrate, a multilayer insulating layer on the first electrode, and a fourth electrode on the multilayer insulating layer;
其中，所述第一电极、所述第四电极、及所述多层绝缘层由透明材料制成。Wherein, the first electrode, the fourth electrode, and the multilayer insulating layer are made of transparent materials.
在本申请的电子装置中，In the electronic device of the present application,
所述存储电容包括位于所述基板上的第一电极、位于所述第一电极上的第一绝缘层、位于所述第一绝缘层上的第二电极、位于所述第二电极上的第三绝缘层、及位于所述第三绝缘层上的第四电极；The storage capacitor includes a first electrode on the substrate, a first insulating layer on the first electrode, a second electrode on the first insulating layer, and a second electrode on the second electrode Three insulating layers and a fourth electrode on the third insulating layer;
其中，所述第一电极、所述第二电极、所述第四电极、所述第一绝缘层、及第三绝缘层由透明材料制成。Wherein, the first electrode, the second electrode, the fourth electrode, the first insulating layer, and the third insulating layer are made of transparent materials.
在本申请的电子装置中，In the electronic device of the present application,
所述存储电容包括位于所述基板上的第一电极、位于所述第一电极上的第一绝缘层、位于所述第一绝缘层上的第二电极、位于所述第二电极上的第二绝缘层、及位于所述第二绝缘层上的第三电极、位于所述第三电极上的第三绝缘层、及位于所述第三绝缘层上的第四电极；The storage capacitor includes a first electrode on the substrate, a first insulating layer on the first electrode, a second electrode on the first insulating layer, and a second electrode on the second electrode Two insulating layers, and a third electrode on the second insulating layer, a third insulating layer on the third electrode, and a fourth electrode on the third insulating layer;
其中，所述第一电极、所述第二电极、第三电极、所述第四电极、第一绝缘层、第二绝缘层、及第三绝缘层由透明材料制成。Wherein, the first electrode, the second electrode, the third electrode, the fourth electrode, the first insulating layer, the second insulating layer, and the third insulating layer are made of a transparent material.
有益效果Beneficial effect
本申请通过利用透明材料制作阵列基板的存储电容区，并在所述存储电容上设置发光器件层，增加了显示面板的开口率，提高了显示面板的显示效果。The present application uses transparent materials to fabricate the storage capacitor area of the array substrate, and a light-emitting device layer is provided on the storage capacitor to increase the aperture ratio of the display panel and improve the display effect of the display panel.
附图说明BRIEF DESCRIPTION
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to more clearly explain the embodiments or the technical solutions in the prior art, the following will briefly introduce the drawings required in the embodiments or the description of the prior art. Obviously, the drawings in the following description are only inventions. For some embodiments, those of ordinary skill in the art can obtain other drawings based on these drawings without creative efforts.
图1为本申请显示面板的第一种结构图；Figure 1 is the first structural diagram of the display panel of this application;
图2为本申请显示面板的第二种结构图；2 is a second structural diagram of the display panel of the present application;
图3为本申请显示面板的第三种结构图；FIG. 3 is a third structural diagram of the display panel of this application;
图4为本申请显示面板的第四种结构图；4 is a fourth structural diagram of the display panel of the present application;
图5为本申请显示面板的第五种结构图。5 is a fifth structural diagram of the display panel of the present application.
本发明的实施方式Embodiments of the invention
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。The descriptions of the following embodiments refer to additional drawings to illustrate specific embodiments that can be implemented in the present application. Directional terms mentioned in this application, such as [upper], [lower], [front], [back], [left], [right], [inner], [outer], [side], etc., are for reference only Attach the direction of the schema. Therefore, the directional language used is to illustrate and understand this application, not to limit this application. In the figure, units with similar structures are indicated by the same reference numerals.
请参阅图1，图1为本申请显示面板的第一种结构图。Please refer to FIG. 1, which is the first structural diagram of the display panel of the present application.
所述显示面板100包括：The display panel 100 includes:
阵列基板，所述阵列基板包括基板101、及位于所述基板101上的薄膜晶体管层200、及位于所述薄膜晶体管层200上的发光器件层300。An array substrate including a substrate 101, a thin film transistor layer 200 on the substrate 101, and a light emitting device layer 300 on the thin film transistor layer 200.
所述薄膜晶体管层200包括薄膜晶体管单元10、存储电容20、及开关单元（未画出）。所述开光单元在本申请不作具体讨论。The thin film transistor layer 200 includes a thin film transistor unit 10, a storage capacitor 20, and a switch unit (not shown). The light-opening unit is not specifically discussed in this application.
在一种实施例中，所述存储电容20在所述发光器件层300上正投影面与所述发光器件层300部分重合。In one embodiment, the orthographic projection surface of the storage capacitor 20 on the light emitting device layer 300 partially overlaps with the light emitting device layer 300.
在一种实施例中，所述存储电容20内的膜层结构由透明材料制成。In an embodiment, the film structure in the storage capacitor 20 is made of a transparent material.
在一种实施例中，所述基板101的原材料可以为玻璃基板、石英基板、树脂基板等中的一种。In an embodiment, the raw material of the substrate 101 may be one of a glass substrate, a quartz substrate, a resin substrate, and the like.
在一种实施例中，所述基板101还可以为柔性基板。所述柔性基板的材料可以为PI（聚酰亚胺）。In an embodiment, the substrate 101 may also be a flexible substrate. The material of the flexible substrate may be PI (polyimide).
所述薄膜晶体管单元10包括ESL（蚀刻阻挡层型）、BCE（背沟道蚀刻型）或Top-gate（顶栅薄膜晶体管型）结构，具体没有限制。本申请以顶栅薄膜晶体管型为例进行说明。The thin film transistor unit 10 includes an ESL (etch barrier layer type), BCE (back channel etch type) or Top-gate (top gate thin film transistor type) structure, which is not specifically limited. This application takes the top gate thin film transistor type as an example for description.
所述薄膜晶体管单元10包括：遮光层102、缓冲层103、有源层104、栅绝缘层105、栅极106、间绝缘层107、源漏极108、钝化层109及平坦化层110。The thin film transistor unit 10 includes a light-shielding layer 102, a buffer layer 103, an active layer 104, a gate insulating layer 105, a gate 106, an inter-insulating layer 107, a source and drain 108, a passivation layer 109, and a planarization layer 110.
所述遮光层102形成于所述基板101上，主要用于遮挡光源进行薄膜晶体管单元10，影响薄膜晶体管的驱动效果。The light-shielding layer 102 is formed on the substrate 101 and is mainly used to block the light source for the thin film transistor unit 10 and affect the driving effect of the thin film transistor.
所述缓冲层103形成于所述遮光层102上，主要用于缓冲膜层质结构之间的压力，并且还可以具有一定阻水氧的功能。The buffer layer 103 is formed on the light-shielding layer 102 and is mainly used to buffer the pressure between the layer structures of the film, and may also have a certain function of blocking water and oxygen.
所述有源层104形成于所述缓冲层103上。所述有源层104包括经离子掺杂的掺杂区（未画出）。The active layer 104 is formed on the buffer layer 103. The active layer 104 includes ion-doped doped regions (not shown).
在一种实施例中，所述有源层104的材料可以为铟镓锌氧化物（IGZO），即导电的半导体，同时也是透明材料。In an embodiment, the material of the active layer 104 may be indium gallium zinc oxide (IGZO), which is a conductive semiconductor, and also a transparent material.
所述栅绝缘层105形成于所述有源层104上。The gate insulating layer 105 is formed on the active layer 104.
所述栅绝缘层105将所述有源层104覆盖。所述间绝缘层107用于将所述有源层104与其他金属层隔离。The gate insulating layer 105 covers the active layer 104. The interlayer insulating layer 107 is used to isolate the active layer 104 from other metal layers.
所述栅极106形成于所述栅绝缘层105上。The gate 106 is formed on the gate insulating layer 105.
所述栅极105的金属材料通常可以采用钼、铝、铝镍合金、钼钨合金、铬、或铜等金属，也可以使用上述几种金属材料的组合物。The metal material of the gate 105 may generally be a metal such as molybdenum, aluminum, aluminum-nickel alloy, molybdenum-tungsten alloy, chromium, or copper, or a combination of the foregoing metal materials.
在一种实施例中，所述栅极106的金属材料可以为钼。In an embodiment, the metal material of the gate 106 may be molybdenum.
所述间绝缘层107形成于所述栅极106上。The interlayer insulating layer 107 is formed on the gate 106.
所述间绝缘层107将所述栅极106覆盖。所述间绝缘层107主要用于将所述栅极106和所述源漏极108隔离；The interlayer insulating layer 107 covers the gate 106. The interlayer insulating layer 107 is mainly used to isolate the gate 106 from the source and drain 108;
所述源漏极108形成于所述间绝缘层107上。The source and drain 108 are formed on the inter-insulating layer 107.
所述源漏极108的金属材料通常可以采用钼、铝、铝镍合金、钼钨合金、铬、铜或钛铝合金等金属，也可以使用上述几种金属材料的组合物。The metal material of the source and drain 108 may generally be molybdenum, aluminum, aluminum-nickel alloy, molybdenum-tungsten alloy, chromium, copper, or titanium aluminum alloy, or a combination of the foregoing metal materials.
所述源漏极108通过第二过孔115与所述有源层104上的掺杂区电连接。The source and drain 108 are electrically connected to the doped region on the active layer 104 through the second via 115.
在一种实施例中，所述源漏极108的金属材料可以为钛铝钛。In an embodiment, the metal material of the source and drain 108 may be titanium aluminum titanium.
所述钝化层109及所述平坦化层110形成于所述源漏极108上，所述钝化层109用于保证所述薄膜晶体管工艺上的平整性。The passivation layer 109 and the planarization layer 110 are formed on the source and drain 108. The passivation layer 109 is used to ensure the flatness of the thin film transistor process.
所述发光器件层包括形成于所述阵列基板上的阳极层111、发光层112及阴极层113；The light emitting device layer includes an anode layer 111, a light emitting layer 112, and a cathode layer 113 formed on the array substrate;
所述阳极层111形成于所述平坦层110上。The anode layer 111 is formed on the flat layer 110.
所述阳极层111主要用于提供吸收电子的空穴。The anode layer 111 is mainly used to provide holes for absorbing electrons.
本实施例中，发光器件（OLED）为底发射型OLED器件，因此所述像阳极层111为透明的金属电极。In this embodiment, the light emitting device (OLED) is a bottom-emission type OLED device, so the image anode layer 111 is a transparent metal electrode.
在一种实施例中，所述阳极层111的材料可选为铟锡氧化物（ITO）、氧化铟锌（IZO）、氧化锌（ZnO）、氧化铟（In2O3）、铟镓氧化物（IGO）或氧化锌铝（AZO）中的至少一种；In an embodiment, the material of the anode layer 111 may be indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO) ) Or at least one of zinc oxide aluminum (AZO);
所述发光层112形成于所述阳极层111上。所述发光层112被像素定义层114分割成多个发光单元。The light emitting layer 112 is formed on the anode layer 111. The light-emitting layer 112 is divided into a plurality of light-emitting units by the pixel definition layer 114.
所述阴极层113形成于所述发光层112上。The cathode layer 113 is formed on the light-emitting layer 112.
所述阴极层113覆盖所述发光层112及位于所述阵列基板上的像素定义层114。The cathode layer 113 covers the light-emitting layer 112 and the pixel definition layer 114 on the array substrate.
在一种实施例中，所述阴极层113可以为非透明材料或透明材料。当所述阴极层113为非透明材料时，发光层112产生的光线经过所述阴极层113向所述基板101方向投射。当所述阴极层113为透明材料时，可以在所述阴极层113上设置一反射层，使得透过所述阴极层113的光向所述基板101方向投射。In an embodiment, the cathode layer 113 may be a non-transparent material or a transparent material. When the cathode layer 113 is a non-transparent material, light generated by the light-emitting layer 112 passes through the cathode layer 113 and is projected toward the substrate 101. When the cathode layer 113 is a transparent material, a reflective layer may be provided on the cathode layer 113 so that the light transmitted through the cathode layer 113 is projected toward the substrate 101.
请参阅图1，所述存储电容20包括位于所述基板101上的第一电极201、位于所述第一电极201上的多层绝缘层、位于所述多层绝缘层上的第四电极207。Referring to FIG. 1, the storage capacitor 20 includes a first electrode 201 on the substrate 101, a multilayer insulating layer on the first electrode 201, and a fourth electrode 207 on the multilayer insulating layer .
在一种实施例中，所述第一电极201、所述第四电极207、及所述多层绝缘层由透明材料制成。In one embodiment, the first electrode 201, the fourth electrode 207, and the multilayer insulating layer are made of a transparent material.
在一种实施例中，所述第一电极201与所述薄膜晶体管单元10中的遮光层102同层设置。所述第一电极201与所述遮光层102在不同的光罩工艺中形成。In one embodiment, the first electrode 201 and the light shielding layer 102 in the thin film transistor unit 10 are disposed in the same layer. The first electrode 201 and the light shielding layer 102 are formed in different mask processes.
在一种实施例中，所述第四电极207与所述薄膜晶体管单元10中的源漏极108同层设置。所述第四电极207与所述薄膜晶体管单元10的所述源漏极108电连接。所述第四电极207与所述源漏极108在不同的光罩工艺中形成。In one embodiment, the fourth electrode 207 and the source and drain 108 in the thin film transistor unit 10 are disposed in the same layer. The fourth electrode 207 is electrically connected to the source and drain 108 of the thin film transistor unit 10. The fourth electrode 207 and the source/drain 108 are formed in different mask processes.
在一种实施例中，所述第一电极201、所述第四电极207形成所述显示面板100的所述存储电容20。In one embodiment, the first electrode 201 and the fourth electrode 207 form the storage capacitor 20 of the display panel 100.
在一种实施例中，所述多层绝缘层为与所述薄膜晶体管单元10中的所述缓冲层103与所述间绝缘层107。In one embodiment, the multilayer insulation layer is the buffer layer 103 and the interlayer insulation layer 107 in the thin film transistor unit 10.
所述存储电容20还包括第三过孔208。所述第一电极201通过所述第三过孔208与所述第四电极207电连接。The storage capacitor 20 further includes a third via 208. The first electrode 201 is electrically connected to the fourth electrode 207 through the third via 208.
在一种实施例中，所述第三过孔208贯穿所述间绝缘层107及所述缓冲层103。In one embodiment, the third via 208 penetrates the inter-insulation layer 107 and the buffer layer 103.
由于所述薄膜晶体管单元10受到光照影响，降低所述薄膜晶体管的性能，因此所述薄膜晶体管单元10需要设置遮光层102防止外界光源对所述薄膜晶体管单元10的影响。Since the thin film transistor unit 10 is affected by light and reduces the performance of the thin film transistor, the thin film transistor unit 10 needs to be provided with a light shielding layer 102 to prevent the influence of the external light source on the thin film transistor unit 10.
本申请为了保证所述显示面板100的开口率，所述第一电极201、所述第二电极203以及位于所述第一电极201与所述第二电极203之间的所述缓冲层103与所述间绝缘层107采用透明材料制成。In order to ensure the aperture ratio of the display panel 100 in this application, the first electrode 201, the second electrode 203, and the buffer layer 103 between the first electrode 201 and the second electrode 203 are The inter-insulation layer 107 is made of transparent material.
请参阅图1，所述显示面板100还包括第一过孔116。Please refer to FIG. 1, the display panel 100 further includes a first via 116.
所述第一过孔116位于所述第四电极207上。所述发光器件层300中的阳极层111通过所述第一过孔116与所述第四电极207电连接。The first via 116 is located on the fourth electrode 207. The anode layer 111 in the light emitting device layer 300 is electrically connected to the fourth electrode 207 through the first via 116.
请参阅图2，图2为本申请显示面板100的第二种结构图。Please refer to FIG. 2, which is a second structural diagram of the display panel 100 of the present application.
所述第一过孔116位于所述源漏极108上。所述发光器件层300中的阳极层111通过所述第一过孔116与所述源漏极108电连接。The first via 116 is located on the source and drain 108. The anode layer 111 in the light emitting device layer 300 is electrically connected to the source and drain 108 through the first via 116.
请参阅图3，图3为本申请显示面板100的第三种结构图。Please refer to FIG. 3, which is a third structural diagram of the display panel 100 of the present application.
所述存储电容20包括位于所述基板101上的第一电极201、位于所述第一电极201上的第一绝缘层202、位于所述第一绝缘层202上的第二电极203、位于所述第二电极203上的第二绝缘层204、及位于所述第二绝缘层204上的第四电极207。The storage capacitor 20 includes a first electrode 201 on the substrate 101, a first insulating layer 202 on the first electrode 201, a second electrode 203 on the first insulating layer 202, The second insulating layer 204 on the second electrode 203 and the fourth electrode 207 on the second insulating layer 204.
在一种实施例中，所述第一电极201、所述第二电极203、所述第四电极207、所述第一绝缘层202、及第二绝缘层204由透明材料制成。In an embodiment, the first electrode 201, the second electrode 203, the fourth electrode 207, the first insulating layer 202, and the second insulating layer 204 are made of a transparent material.
在一种实施例中，所述第一电极201与所述薄膜晶体管单元10中的遮光层102同层设置。所述第一电极201的结构与图1及图2相同，具体不在赘述。In one embodiment, the first electrode 201 and the light shielding layer 102 in the thin film transistor unit 10 are disposed in the same layer. The structure of the first electrode 201 is the same as that in FIGS. 1 and 2, and details are not described in detail.
在一种实施例中，所述第二电极203与所述薄膜晶体管单元10中的有源层104同层设置。所述第二电极203与所述有源层104在同一道光罩工艺中形成。所述第二电极203与所述有源层104的材料相同。所述第二电极203材料为铟镓锌氧化物（IGZO）。In one embodiment, the second electrode 203 is disposed in the same layer as the active layer 104 in the thin film transistor unit 10. The second electrode 203 and the active layer 104 are formed in the same photomask process. The material of the second electrode 203 and the active layer 104 are the same. The material of the second electrode 203 is indium gallium zinc oxide (IGZO).
在一种实施例中，所述第一绝缘层202与所述缓冲层103同层设置。所述第一绝缘层202与所述缓冲层103在同一道光罩工艺中形成。In an embodiment, the first insulating layer 202 and the buffer layer 103 are disposed in the same layer. The first insulating layer 202 and the buffer layer 103 are formed in the same photomask process.
在一种实施例中，所述第二绝缘层204与所述间绝缘层107同层设置。所述第二绝缘层204与所述间绝缘层107在同一道光罩工艺中形成。In one embodiment, the second insulating layer 204 and the inter-insulating layer 107 are provided in the same layer. The second insulating layer 204 and the inter-insulating layer 107 are formed in the same mask process.
在一种实施例中，所述第四电极207与所述薄膜晶体管单元10中的源漏极108同层设置。所述第四电极207与所述薄膜晶体管单元10的所述源漏极108电连接。所述第四电极207的结构与图1及图2相同，具体不在赘述。In one embodiment, the fourth electrode 207 and the source and drain 108 in the thin film transistor unit 10 are disposed in the same layer. The fourth electrode 207 is electrically connected to the source and drain 108 of the thin film transistor unit 10. The structure of the fourth electrode 207 is the same as FIG. 1 and FIG. 2, and the details are not described in detail.
在一种实施例中，所述第一电极201、所述第二电极203形成所述显示面板100的第一电容。所述第二电极203、所述第四电极207形成所述显示面板100的第二电容。所述第一电容极所述第二电容并联设置，增加了所述显示面板100存储电容20的电容量，能满足在高解析度下面板对高电容的需求。In one embodiment, the first electrode 201 and the second electrode 203 form a first capacitor of the display panel 100. The second electrode 203 and the fourth electrode 207 form a second capacitor of the display panel 100. The first capacitor and the second capacitor are arranged in parallel to increase the capacitance of the storage capacitor 20 of the display panel 100, which can meet the panel's demand for high capacitance at high resolution.
在一种实施例中，所述第一过孔116的设置与图1及图2相同，具体不在赘述。In an embodiment, the configuration of the first via 116 is the same as that in FIGS. 1 and 2, and details are not described in detail.
请参阅图4，图4为本申请显示面板100的第四种结构图。Please refer to FIG. 4, which is a fourth structural diagram of the display panel 100 of the present application.
本实施例与图3中相同或类似，不同之处在于：This embodiment is the same as or similar to that in FIG. 3, except for:
所述第二电极203与所述薄膜晶体管单元10中的栅极106同层设置。The second electrode 203 is provided in the same layer as the gate electrode 106 in the thin film transistor unit 10.
所述第二电极203与所述栅极106在同一道光罩工艺中形成。The second electrode 203 and the gate electrode 106 are formed in the same photomask process.
在图3和图4中，所述显示面板100还包括第一过孔116。In FIGS. 3 and 4, the display panel 100 further includes a first via 116.
所述第一过孔116的连接方式与图1及图2相同，具体不在赘述。The connection method of the first via 116 is the same as that in FIG. 1 and FIG. 2, and details are not described in detail.
请参阅图5，图5为本申请显示面板100的第五种结构图。Please refer to FIG. 5, which is a fifth structural diagram of the display panel 100 of the present application.
所述存储电容20包括位于所述基板101上的第一电极201、位于所述第一电极201上的第一绝缘层202、位于所述第一绝缘层202上的第二电极203、位于所述第二电极203上的第二绝缘层204、及位于所述第二绝缘层204上的第三电极205、位于所述第三电极205上的第三绝缘层206、及位于所述第三绝缘层206上的第四电极207。The storage capacitor 20 includes a first electrode 201 on the substrate 101, a first insulating layer 202 on the first electrode 201, a second electrode 203 on the first insulating layer 202, A second insulating layer 204 on the second electrode 203, a third electrode 205 on the second insulating layer 204, a third insulating layer 206 on the third electrode 205, and a third insulating layer The fourth electrode 207 on the insulating layer 206.
在一种实施例中，所述第一电极201、所述第二电极203、第三电极205、所述第四电极207、第一绝缘层202、第二绝缘层204、及第三绝缘层206由透明材料制成。In an embodiment, the first electrode 201, the second electrode 203, the third electrode 205, the fourth electrode 207, the first insulating layer 202, the second insulating layer 204, and the third insulating layer 206 is made of transparent material.
在一种实施例中，所述第一电极201与所述薄膜晶体管单元10中的遮光层102同层设置。In one embodiment, the first electrode 201 and the light shielding layer 102 in the thin film transistor unit 10 are disposed in the same layer.
在一种实施例中，所述第二电极203与所述薄膜晶体管单元10中的有源层104同层设置。In one embodiment, the second electrode 203 is disposed in the same layer as the active layer 104 in the thin film transistor unit 10.
在一种实施例中，所述第三电极205与所述薄膜晶体管单元10中的栅极106同层设置。In one embodiment, the third electrode 205 and the gate electrode 106 in the thin film transistor unit 10 are disposed in the same layer.
在一种实施例中，所述第四电极207与所述薄膜晶体管单元10中的源漏极108同层设置。所述第四电极207与所述薄膜晶体管单元10的所述源漏极108电连接。In one embodiment, the fourth electrode 207 and the source and drain 108 in the thin film transistor unit 10 are disposed in the same layer. The fourth electrode 207 is electrically connected to the source and drain 108 of the thin film transistor unit 10.
在一种实施例中，所述第一电极201、所述第二电极203形成所述显示面板100的第一电容。所述第二电极203、所述第三电极205形成所述显示面板100的第二电容。所述第三电极205、所述第四电极207形成所述显示面板100的第三电容。所述第一电容、所述第二电容及所述第三电容并联设置，增加了所述显示面板100存储电容20的电容量，能满足在高解析度下面板对高电容的需求。In one embodiment, the first electrode 201 and the second electrode 203 form a first capacitor of the display panel 100. The second electrode 203 and the third electrode 205 form a second capacitor of the display panel 100. The third electrode 205 and the fourth electrode 207 form a third capacitor of the display panel 100. The first capacitor, the second capacitor, and the third capacitor are arranged in parallel to increase the capacitance of the storage capacitor 20 of the display panel 100, which can meet the panel's demand for high capacitance at high resolution.
在图1~图5中，位于所述显示面板100开口区下方的所述存储电容20由透明材料制成。位于开口区内的发光层发出的光穿过所述存储电容20进入外界。相比现有技术增加了所述存储电容20对应的开口区，增加了所述显示面板100的开口率，提高了显示面板100的显示效果。In FIGS. 1 to 5, the storage capacitor 20 located under the opening area of the display panel 100 is made of a transparent material. The light emitted by the light emitting layer located in the opening area passes through the storage capacitor 20 and enters the outside world. Compared with the prior art, the opening area corresponding to the storage capacitor 20 is increased, the opening ratio of the display panel 100 is increased, and the display effect of the display panel 100 is improved.
在本实施例中，所述第一电极201、所述第二电极203、第三电极205以及所述第四电极207中的任意两者或三者可以进行组合形成是所述存储电容20，此类实施例，本申请不再赘述。In this embodiment, any two or three of the first electrode 201, the second electrode 203, the third electrode 205, and the fourth electrode 207 may be combined to form the storage capacitor 20, Such embodiments will not be repeated in this application.
本申请还提出了一种显示模组，所述显示模组包括上述显示面板及位于所述显示面板上的偏光层及盖板层。所述显示模组的工作原理与所述显示面板相同或类似，具体不再赘述。The present application also proposes a display module including the above-mentioned display panel, and a polarizing layer and a cover layer on the display panel. The working principle of the display module is the same as or similar to that of the display panel, and the details are not repeated here.
本申请还提出了一种电子装置，所述电子装置包括上述显示显示模组。所述电子装置的工作原理与所述显示模组的相同或相同，具体不再赘述。The present application also proposes an electronic device including the above display and display module. The working principle of the electronic device is the same as or the same as that of the display module, and the details are not repeated here.
在一种实施例中，所述电子装置包括但不限定于手机、平板电脑、计算机显示器、游戏机、电视机、显示屏幕、可穿戴设备及其他具有显示功能的生活电器或家用电器等。In one embodiment, the electronic device includes but is not limited to mobile phones, tablet computers, computer monitors, game consoles, televisions, display screens, wearable devices, and other household appliances or household appliances with display functions.
本申请提出了一种显示面板及显示模组、电子装置，所述显示面板包括阵列基板，包括基板、及位于所述基板上的薄膜晶体管单元和存储电容；位于所述阵列基板上的发光器件层；所述存储电容在所述发光器件层上正投影面与所述发光器件层部分重合；所述存储电容内的膜层结构由透明材料制成。本申请通过利用透明材料制作阵列基板的存储电容区，并在所述存储电容上设置发光器件层，增加了显示面板的开口率，提高了显示面板的显示效果。The present application proposes a display panel, a display module, and an electronic device. The display panel includes an array substrate, including a substrate, and a thin film transistor unit and a storage capacitor on the substrate; a light emitting device on the array substrate The storage capacitor has an orthographic projection surface on the light-emitting device layer partially overlapping with the light-emitting device layer; the structure of the film layer in the storage capacitor is made of a transparent material. The present application uses transparent materials to fabricate the storage capacitor area of the array substrate, and a light-emitting device layer is provided on the storage capacitor to increase the aperture ratio of the display panel and improve the display effect of the display panel.
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。In summary, although the present application has been disclosed as preferred embodiments above, the above preferred embodiments are not intended to limit the present application. Those of ordinary skill in the art can make various changes without departing from the spirit and scope of the present application Such changes and retouching, so the scope of protection of this application shall be subject to the scope defined by the claims.

Claims (20)

  1. 一种显示面板，其中，包括：A display panel, including:
    阵列基板，包括基板、及位于所述基板上的薄膜晶体管单元和存储电容；An array substrate, including a substrate, and thin film transistor units and storage capacitors on the substrate;
    位于所述阵列基板上的发光器件层；A light emitting device layer on the array substrate;
    所述存储电容在所述发光器件层上正投影面与所述发光器件层部分重合；The orthographic projection surface of the storage capacitor on the light emitting device layer partially overlaps with the light emitting device layer;
    其中，所述存储电容内的膜层结构由透明材料制成。Wherein, the structure of the film layer in the storage capacitor is made of a transparent material.
  2. 根据权利要求1所述的显示面板，其中，The display panel according to claim 1, wherein
    所述存储电容包括位于所述基板上的第一电极、位于所述第一电极上的多层绝缘层、位于所述多层绝缘层上的第四电极；The storage capacitor includes a first electrode on the substrate, a multilayer insulating layer on the first electrode, and a fourth electrode on the multilayer insulating layer;
    其中，所述第一电极、所述第四电极、及所述多层绝缘层由透明材料制成。Wherein, the first electrode, the fourth electrode, and the multilayer insulating layer are made of transparent materials.
  3. 根据权利要求2所述的显示面板，其中，The display panel according to claim 2, wherein:
    所述第一电极与所述薄膜晶体管单元中的遮光层同层设置；The first electrode and the light shielding layer in the thin film transistor unit are arranged in the same layer;
    所述第四电极与所述薄膜晶体管单元中的源漏极同层设置；The fourth electrode is arranged in the same layer as the source and drain in the thin film transistor unit;
    所述第四电极与所述薄膜晶体管单元的所述源漏极电连接；The fourth electrode is electrically connected to the source and drain of the thin film transistor unit;
    所述第一电极、所述第四电极形成所述显示面板的所述存储电容。The first electrode and the fourth electrode form the storage capacitor of the display panel.
  4. 根据权利要求3所述的显示面板，其中，The display panel according to claim 3, wherein
    所述显示面板还包括第一过孔；The display panel further includes a first via;
    所述第一过孔位于所述第四电极上；The first via is located on the fourth electrode;
    所述发光器件层中的阳极层通过所述第一过孔与所述第四电极电连接。The anode layer in the light emitting device layer is electrically connected to the fourth electrode through the first via hole.
  5. 根据权利要求3所述的显示面板，其中，The display panel according to claim 3, wherein
    所述显示面板还包括第一过孔；The display panel further includes a first via;
    所述第一过孔位于所述源漏极上；The first via is located on the source and drain;
    所述发光器件层中的阳极层通过所述第一过孔与所述源漏极电连接。The anode layer in the light emitting device layer is electrically connected to the source and drain through the first via.
  6. 根据权利要求1所述的显示面板，其中，The display panel according to claim 1, wherein
    所述存储电容包括位于所述基板上的第一电极、位于所述第一电极上的第一绝缘层、位于所述第一绝缘层上的第二电极、位于所述第二电极上的第三绝缘层、及位于所述第三绝缘层上的第四电极；The storage capacitor includes a first electrode on the substrate, a first insulating layer on the first electrode, a second electrode on the first insulating layer, and a second electrode on the second electrode Three insulating layers and a fourth electrode on the third insulating layer;
    其中，所述第一电极、所述第二电极、所述第四电极、所述第一绝缘层、及第三绝缘层由透明材料制成。Wherein, the first electrode, the second electrode, the fourth electrode, the first insulating layer, and the third insulating layer are made of transparent materials.
  7. 根据权利要求6所述的显示面板，其中，The display panel according to claim 6, wherein:
    所述第一电极与所述薄膜晶体管单元中的遮光层同层设置；The first electrode and the light shielding layer in the thin film transistor unit are arranged in the same layer;
    所述第二电极与所述薄膜晶体管单元中的有源层同层设置；The second electrode is arranged in the same layer as the active layer in the thin film transistor unit;
    所述第四电极与所述薄膜晶体管单元中的源漏极同层设置；The fourth electrode is arranged in the same layer as the source and drain in the thin film transistor unit;
    所述第四电极与所述薄膜晶体管单元的所述源漏极电连接。The fourth electrode is electrically connected to the source and drain of the thin film transistor unit.
  8. 根据权利要求6所述的显示面板，其中，The display panel according to claim 6, wherein:
    所述第一电极与所述薄膜晶体管单元中的遮光层同层设置；The first electrode and the light shielding layer in the thin film transistor unit are arranged in the same layer;
    所述第二电极与所述薄膜晶体管单元中的栅极同层设置；The second electrode and the gate in the thin film transistor unit are arranged in the same layer;
    所述第四电极与所述薄膜晶体管单元中的源漏极同层设置；The fourth electrode is arranged in the same layer as the source and drain in the thin film transistor unit;
    所述第四电极与所述薄膜晶体管单元的所述源漏极电连接。The fourth electrode is electrically connected to the source and drain of the thin film transistor unit.
  9. 根据权利要求8所述的显示面板，其中，The display panel according to claim 8, wherein
    所述第一电极、所述第二电极形成所述显示面板的第一电容，The first electrode and the second electrode form a first capacitor of the display panel,
    所述第二电极、所述第四电极形成所述显示面板的第二电容。The second electrode and the fourth electrode form a second capacitor of the display panel.
  10. 根据权利要求1所述的显示面板，其中，The display panel according to claim 1, wherein
    所述存储电容包括位于所述基板上的第一电极、位于所述第一电极上的第一绝缘层、位于所述第一绝缘层上的第二电极、位于所述第二电极上的第二绝缘层、及位于所述第二绝缘层上的第三电极、位于所述第三电极上的第三绝缘层、及位于所述第三绝缘层上的第四电极；The storage capacitor includes a first electrode on the substrate, a first insulating layer on the first electrode, a second electrode on the first insulating layer, and a second electrode on the second electrode Two insulating layers, and a third electrode on the second insulating layer, a third insulating layer on the third electrode, and a fourth electrode on the third insulating layer;
    其中，所述第一电极、所述第二电极、第三电极、所述第四电极、第一绝缘层、第二绝缘层、及第三绝缘层由透明材料制成。Wherein, the first electrode, the second electrode, the third electrode, the fourth electrode, the first insulating layer, the second insulating layer, and the third insulating layer are made of a transparent material.
  11. 根据权利要求10所述的显示面板，其中，The display panel according to claim 10, wherein
    所述第一电极与所述薄膜晶体管单元中的遮光层同层设置；The first electrode and the light shielding layer in the thin film transistor unit are arranged in the same layer;
    所述第二电极与所述薄膜晶体管单元中的有源层同层设置；The second electrode is arranged in the same layer as the active layer in the thin film transistor unit;
    所述第三电极与所述薄膜晶体管单元中的栅极同层设置；The third electrode and the gate in the thin film transistor unit are arranged in the same layer;
    所述第四电极与所述薄膜晶体管单元中的源漏极同层设置；The fourth electrode is arranged in the same layer as the source and drain in the thin film transistor unit;
    所述第四电极与所述薄膜晶体管单元的所述源漏极电连接。The fourth electrode is electrically connected to the source and drain of the thin film transistor unit.
  12. 根据权利要求11所述的显示面板，其中，The display panel according to claim 11, wherein
    所述第一电极、所述第二电极形成所述显示面板的第一电容，The first electrode and the second electrode form a first capacitor of the display panel,
    所述第二电极、所述第三电极形成所述显示面板的第二电容，The second electrode and the third electrode form a second capacitor of the display panel,
    所述第三电极、所述第四电极形成所述显示面板的第三电容。The third electrode and the fourth electrode form a third capacitor of the display panel.
  13. 一种显示模组，其中，所述显示模组包括显示面板及位于所述显示面板的偏光层、盖板层，所述显示面板包括：A display module, wherein the display module includes a display panel and a polarizing layer and a cover layer located on the display panel, the display panel includes:
    阵列基板，包括基板、及位于所述基板上的薄膜晶体管单元和存储电容；An array substrate, including a substrate, and thin film transistor units and storage capacitors on the substrate;
    位于所述阵列基板上的发光器件层；A light emitting device layer on the array substrate;
    所述存储电容在所述发光器件层上正投影面与所述发光器件层部分重合；The orthographic projection surface of the storage capacitor on the light emitting device layer partially overlaps with the light emitting device layer;
    其中，所述存储电容内的膜层结构由透明材料制成。Wherein, the structure of the film layer in the storage capacitor is made of a transparent material.
  14. 根据权利要求13所述的显示模组，其中，The display module according to claim 13, wherein:
    所述存储电容包括位于所述基板上的第一电极、位于所述第一电极上的多层绝缘层、位于所述多层绝缘层上的第四电极；The storage capacitor includes a first electrode on the substrate, a multilayer insulating layer on the first electrode, and a fourth electrode on the multilayer insulating layer;
    其中，所述第一电极、所述第四电极、及所述多层绝缘层由透明材料制成。Wherein, the first electrode, the fourth electrode, and the multilayer insulating layer are made of transparent materials.
  15. 根据权利要求13所述的显示模组，其中，The display module according to claim 13, wherein:
    所述存储电容包括位于所述基板上的第一电极、位于所述第一电极上的第一绝缘层、位于所述第一绝缘层上的第二电极、位于所述第二电极上的第三绝缘层、及位于所述第三绝缘层上的第四电极；The storage capacitor includes a first electrode on the substrate, a first insulating layer on the first electrode, a second electrode on the first insulating layer, and a second electrode on the second electrode Three insulating layers and a fourth electrode on the third insulating layer;
    其中，所述第一电极、所述第二电极、所述第四电极、所述第一绝缘层、及第三绝缘层由透明材料制成。Wherein, the first electrode, the second electrode, the fourth electrode, the first insulating layer, and the third insulating layer are made of transparent materials.
  16. 根据权利要求13所述的显示模组，其中，The display module according to claim 13, wherein:
    所述存储电容包括位于所述基板上的第一电极、位于所述第一电极上的第一绝缘层、位于所述第一绝缘层上的第二电极、位于所述第二电极上的第二绝缘层、及位于所述第二绝缘层上的第三电极、位于所述第三电极上的第三绝缘层、及位于所述第三绝缘层上的第四电极；The storage capacitor includes a first electrode on the substrate, a first insulating layer on the first electrode, a second electrode on the first insulating layer, and a second electrode on the second electrode Two insulating layers, and a third electrode on the second insulating layer, a third insulating layer on the third electrode, and a fourth electrode on the third insulating layer;
    其中，所述第一电极、所述第二电极、第三电极、所述第四电极、第一绝缘层、第二绝缘层、及第三绝缘层由透明材料制成。Wherein, the first electrode, the second electrode, the third electrode, the fourth electrode, the first insulating layer, the second insulating layer, and the third insulating layer are made of a transparent material.
  17. 一种电子装置，其中，所述电子装置包括显示模组，所述显示模组包括显示面板及位于所述显示面板的偏光层、盖板层，所述显示面板包括：An electronic device, wherein the electronic device includes a display module, the display module includes a display panel, a polarizing layer and a cover layer on the display panel, the display panel includes:
    阵列基板，包括基板、及位于所述基板上的薄膜晶体管单元和存储电容；An array substrate, including a substrate, and thin film transistor units and storage capacitors on the substrate;
    位于所述阵列基板上的发光器件层；A light emitting device layer on the array substrate;
    所述存储电容在所述发光器件层上正投影面与所述发光器件层部分重合；The orthographic projection surface of the storage capacitor on the light emitting device layer partially overlaps with the light emitting device layer;
    其中，所述存储电容内的膜层结构由透明材料制成。Wherein, the structure of the film layer in the storage capacitor is made of a transparent material.
  18. 根据权利要求17所述的电子装置，其中，The electronic device according to claim 17, wherein
    所述存储电容包括位于所述基板上的第一电极、位于所述第一电极上的多层绝缘层、位于所述多层绝缘层上的第四电极；The storage capacitor includes a first electrode on the substrate, a multilayer insulating layer on the first electrode, and a fourth electrode on the multilayer insulating layer;
    其中，所述第一电极、所述第四电极、及所述多层绝缘层由透明材料制成。Wherein, the first electrode, the fourth electrode, and the multilayer insulating layer are made of transparent materials.
  19. 根据权利要求17所述的电子装置，其中，The electronic device according to claim 17, wherein
    所述存储电容包括位于所述基板上的第一电极、位于所述第一电极上的第一绝缘层、位于所述第一绝缘层上的第二电极、位于所述第二电极上的第三绝缘层、及位于所述第三绝缘层上的第四电极；The storage capacitor includes a first electrode on the substrate, a first insulating layer on the first electrode, a second electrode on the first insulating layer, and a second electrode on the second electrode Three insulating layers and a fourth electrode on the third insulating layer;
    其中，所述第一电极、所述第二电极、所述第四电极、所述第一绝缘层、及第三绝缘层由透明材料制成。Wherein, the first electrode, the second electrode, the fourth electrode, the first insulating layer, and the third insulating layer are made of transparent materials.
  20. 根据权利要求17所述的电子装置，其中，The electronic device according to claim 17, wherein
    所述存储电容包括位于所述基板上的第一电极、位于所述第一电极上的第一绝缘层、位于所述第一绝缘层上的第二电极、位于所述第二电极上的第二绝缘层、及位于所述第二绝缘层上的第三电极、位于所述第三电极上的第三绝缘层、及位于所述第三绝缘层上的第四电极；The storage capacitor includes a first electrode on the substrate, a first insulating layer on the first electrode, a second electrode on the first insulating layer, and a second electrode on the second electrode Two insulating layers, and a third electrode on the second insulating layer, a third insulating layer on the third electrode, and a fourth electrode on the third insulating layer;
    其中，所述第一电极、所述第二电极、第三电极、所述第四电极、第一绝缘层、第二绝缘层、及第三绝缘层由透明材料制成。Wherein, the first electrode, the second electrode, the third electrode, the fourth electrode, the first insulating layer, the second insulating layer, and the third insulating layer are made of a transparent material.
PCT/CN2019/077909 2018-12-28 2019-03-13 Display panel and display module, and electronic device WO2020133714A1 (en)

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