WO2020132999A1 - 带有温度补偿层的谐振器、滤波器 - Google Patents

带有温度补偿层的谐振器、滤波器 Download PDF

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Publication number
WO2020132999A1
WO2020132999A1 PCT/CN2018/124080 CN2018124080W WO2020132999A1 WO 2020132999 A1 WO2020132999 A1 WO 2020132999A1 CN 2018124080 W CN2018124080 W CN 2018124080W WO 2020132999 A1 WO2020132999 A1 WO 2020132999A1
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WIPO (PCT)
Prior art keywords
temperature compensation
resonator
layer
compensation layer
piezoelectric layer
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PCT/CN2018/124080
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English (en)
French (fr)
Inventor
张孟伦
庞慰
杨清瑞
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Priority to PCT/CN2018/124080 priority Critical patent/WO2020132999A1/zh
Publication of WO2020132999A1 publication Critical patent/WO2020132999A1/zh
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator

Definitions

  • the present invention relates to the field of communications, and in particular to a resonator and filter with a temperature compensation layer.
  • BAW filter solutions can provide smaller passband insertion loss at high frequencies, higher selectivity, and can withstand high power for a long time, better electrostatic discharge (ESD) protection and more Stable temperature characteristics. Based on these advantages, the market share of BAW filter technology in wireless communication applications is gradually increasing.
  • the thickness of the piezoelectric layer, the metal layer or the dielectric layer of the piezoelectric acoustic wave resonator and the speed of sound therein vary with temperature, so the resonance frequency of the piezoelectric acoustic wave resonator also changes with temperature.
  • the thickness expansion or contraction of each layer of the above piezoelectric acoustic wave resonator with temperature changes will affect the resonance frequency, the change of the sound wave propagation speed with temperature in each layer is the main factor affecting the change of the resonance frequency of the piezoelectric acoustic wave resonator with temperature the reason.
  • a radio frequency (RF) filter composed of a piezoelectric acoustic wave resonator usually has a passband frequency response, and the frequency temperature coefficient (TCF) of the piezoelectric acoustic wave resonator will reduce the manufacturing yield of the radio frequency (RF) filter because the pressure
  • TCF frequency temperature coefficient
  • the device or device composed of the electroacoustic resonator can only meet the requirements of the passband bandwidth within a certain temperature range.
  • the main materials constituting the stacked structure of the piezoelectric acoustic wave resonator basically have a negative temperature coefficient of sound velocity, and SiO 2 (silicon dioxide) material has a positive temperature coefficient of sound velocity.
  • SiO 2 silicon dioxide
  • the thickness can effectively reduce the frequency drift of the piezoelectric acoustic wave resonator with temperature.
  • the inserted temperature compensation layer structure will reduce the electromechanical coupling coefficient of the resonator, and as the thickness of the temperature compensation layer increases, the quality factor Q of the resonator will also decrease.
  • the resonance frequency, electromechanical coupling coefficient, resonator quality factor, and resonator frequency temperature coefficient of the piezoelectric resonator need to meet certain requirements at the same time, and by simply adjusting the SiO 2 and other The thickness of the layer material is difficult to achieve.
  • the present invention provides a resonator and a filter with a temperature compensation layer, so that the temperature coefficient of sound velocity of the temperature compensation layer material can be adjusted to adjust the temperature compensation layer without affecting other performances of the resonator
  • the temperature compensation ability of the material makes the design process of the resonator more flexible.
  • the embodiments of the present invention provide a resonator with a temperature compensation layer, and a plurality of the resonators are used to form a filter in cascade.
  • the resonator includes a top electrode, a piezoelectric layer, a bottom electrode, an acoustic reflection structure, a substrate, and a temperature compensation layer located on the top electrode or the piezoelectric layer, connected in sequence.
  • a part of the piezoelectric layer is doped with rare earth elements.
  • the thickness range of the temperature compensation layer is (Angel) to Preferably it can be to
  • An embodiment of the present invention further provides a filter including a plurality of the above-mentioned resonators, and a plurality of the resonators are cascaded to form the filter.
  • the resonator of the present invention includes a temperature compensation layer, the ability of the resonator to compensate for temperature can be improved, but the electromechanical coupling coefficient of the resonator can also be reduced.
  • the thickness of the temperature compensation layer is too thick, it will also cause the Q value of the resonator (Q value is the quality factor value) to decrease.
  • Q value is the quality factor value
  • a part of the piezoelectric layer is doped with a rare-earth element whose atomic radius is usually larger than that of the piezoelectric layer itself, so the stress of the piezoelectric layer changes, and only a part of the piezoelectric layer is doped with rare-earth elements.
  • the part of the piezoelectric layer doped with the rare earth element has the greatest stress, so that a thin temperature compensation layer can be added to the piezoelectric layer of the doped part to achieve the best temperature compensation effect.
  • the thickness of the temperature compensation layer is thin, it can reduce the loss of sound wave energy and improve the Q value of the resonator; and by changing the doping method of the rare earth element in the piezoelectric layer, the stress in the piezoelectric layer can be changed The changing situation can further flexibly change the position of the temperature compensation layer, so that the resonator can be designed with greater flexibility without affecting its performance.
  • the electric dipole in the piezoelectric layer material will change.
  • the piezoelectric layer material will produce The greater mechanical response can enable the resonator to obtain a higher electromechanical coupling coefficient, which can compensate for the decrease in the resonator electromechanical coupling coefficient caused by the addition of the temperature compensation layer.
  • a portion of the piezoelectric layer close to the top electrode is doped with rare earth elements; the temperature compensation layer is located in a portion of the piezoelectric layer doped with rare earth elements.
  • a portion of the piezoelectric layer close to the bottom electrode is doped with rare earth elements; the temperature compensation layer is located in a portion of the piezoelectric layer doped with rare earth elements.
  • the piezoelectric layer includes a first part, a second part, and a third part in sequence; the first part is close to the top electrode, the third part is close to the bottom electrode, and the second part Doped with rare earth elements; the temperature compensation layer is located in the second part.
  • a portion of the piezoelectric layer near the top electrode is doped with rare earth elements; the temperature compensation layer is located on the top electrode.
  • the piezoelectric layer is doped with different proportions of rare earth elements in the thickness direction of the piezoelectric layer, and the proportion of rare earth elements doped in the direction from the bottom electrode to the top electrode is increasing high.
  • the temperature compensation layer is located above the top electrode.
  • the temperature compensation layer is located in the top electrode and is surrounded by the top electrode.
  • the piezoelectric layer is doped with different proportions of rare earth elements in the thickness direction of the piezoelectric layer, and the proportion of rare earth elements doped in the direction from the top electrode to the bottom electrode is increasing high.
  • the temperature compensation layer is located in the piezoelectric layer with the highest proportion of rare earth elements doped.
  • the temperature compensation layer is located in the bottom electrode and is surrounded by the bottom electrode.
  • the piezoelectric layer has a single-layer structure or a multi-layer structure.
  • the rare earth element is any one or any combination of the following: lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, yttrium, and scandium.
  • the rare earth element is scandium.
  • the scandium doping amount is 0.5%-40%.
  • the resonator further includes a flat layer between the piezoelectric layer and the substrate; the flat layer is located at one end of the bottom electrode and is aligned with the end of the bottom electrode.
  • FIG. 1 is a schematic structural view of a resonator with a temperature compensation layer in the first embodiment
  • FIG. 2 is another schematic diagram of the structure of the resonator with a temperature compensation layer in the first embodiment
  • FIG. 3 is another schematic diagram of the structure of the resonator with a temperature compensation layer in the first embodiment
  • FIG. 4 is another schematic diagram of the structure of the resonator with a temperature compensation layer in the first embodiment
  • FIG. 5 is a schematic structural view of a resonator with a temperature compensation layer in a second embodiment
  • FIG. 6 is another schematic structural view of a resonator with a temperature compensation layer in the second embodiment
  • FIG. 7 is another schematic diagram of the structure of the resonator with a temperature compensation layer in the second embodiment
  • FIG. 8 is a schematic structural view of a resonator with a temperature compensation layer in a third embodiment
  • FIG 9 is another schematic diagram of the structure of the resonator with a temperature compensation layer in the third embodiment.
  • the first embodiment of the present invention relates to a resonator with a temperature compensation layer.
  • the resonator with a temperature compensation layer in this embodiment is a thin film bulk acoustic resonator.
  • a plurality of the resonators are used in cascade to form a filter.
  • the resonator includes a top electrode, a piezoelectric layer, a bottom electrode, an acoustic reflection structure, a substrate, and a temperature compensation layer located on the top electrode or the piezoelectric layer, connected in sequence.
  • a part of the piezoelectric layer is doped with rare earth elements.
  • the material of the top electrode and the bottom electrode can be made of gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminum (Al ), titanium (Ti) and other similar metals.
  • the piezoelectric layer can be made of aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO 3 ), quartz (Quartz), potassium niobate (KNbO 3 ) or tantalum Lithium acid (LiTaO 3 ), etc.
  • AlN aluminum nitride
  • ZnO zinc oxide
  • PZT lead zirconate titanate
  • LiNbO 3 quartz
  • KNbO 3 potassium niobate
  • tantalum Lithium acid LiTaO 3
  • the above-mentioned materials are piezoelectric thin films with a thickness of less than 10 microns.
  • the aluminum nitride thin film is in a polycrystalline or single crystal form, and the growth method is thin film sputtering (sputtering) or organic metal chemical vapor deposition (MOCVD).
  • the material of the temperature compensation layer may be polysilicon, borophosphate glass (BSG), silicon dioxide (SiO 2 ), chromium (Cr), or tellurium oxide (TeO (x) ).
  • the temperature compensation layer in the embodiment of the present invention has a thin thickness and can flexibly adjust the position while not affecting other performances of the resonator as much as possible.
  • the thickness range of the temperature compensation layer is (Angel) to Preferably it can be to
  • a part of the piezoelectric layer 102 near the top electrode 101 is doped with a rare earth element, that is, taking the direction shown in FIG. 1 as an example, the upper half of the piezoelectric layer 102 is doped .
  • the temperature compensation layer 106 is located in the piezoelectric layer 102 doped with rare earth elements.
  • the resonator with the temperature compensation layer 106 in FIG. 1 is a thin film bulk acoustic resonator.
  • the resonator with a temperature compensation layer 106 includes a top electrode 101, a piezoelectric layer 102, a bottom electrode 103, an acoustic reflection structure 104, a substrate 105, and the top electrode 101 or the piezoelectric layer connected in sequence
  • a flat layer 107 is also included.
  • the material of the flat layer 107 may be silicon dioxide, silicon nitride, silicon carbide, or other suitable dielectric materials.
  • a flat layer 107 is located between the piezoelectric layer 102 and the substrate 105, and the flat layer 107 is located at one end of the bottom electrode 103 and is aligned with the end of the bottom electrode 103, thereby forming a flat and smooth surface It helps to deposit a good piezoelectric film at the connection between the bottom electrode 103 and the flat layer 107.
  • the piezoelectric layer 102 may have a single-layer structure or a multi-layer structure. For a multi-layer structure, for example, a portion 1021 doped with rare earth elements is a one-layer structure, and a portion 1022 not doped with rare earth elements is another layer structure.
  • the acoustic reflection structure 104 is composed of a cavity embedded in the substrate 105, but any other acoustic reflection structure 104 such as a Bragg reflector is also applicable.
  • a typical piezoelectric material of the piezoelectric layer 102 is aluminum nitride (AlN).
  • Aluminum nitride has a wurtzite structure, that is, a hexagonal crystal system.
  • the piezoelectric layer 102 is asymmetrically doped, that is, a part of the piezoelectric layer 102 is doped with a rare earth element.
  • the rare earth element may be any one or any combination of the following: lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), Gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), yttrium (Y) and scandium (Sc).
  • the rare earth element is preferably scandium.
  • the rare earth element When the rare earth element is doped into the material of the piezoelectric layer 102, it will replace Al atoms in the AlN crystal structure to form an Al 1-a Sc a N structure, where a represents the atomic content of Sc, and the typical amount of Sc doping can be It is 0.5%-40%.
  • the bottom electrode 103, the piezoelectric layer 102, and the top electrode 101 constituting the thin film bulk acoustic resonator have a negative temperature coefficient.
  • the sound wave propagation speed decreases in the bottom electrode 103, the piezoelectric layer 102, and the top electrode 101, and the resonance frequency of the resonator decreases. Therefore, the frequency temperature coefficient of the piezoelectric acoustic wave resonator without the temperature compensation layer 106 is negative.
  • a temperature compensation layer 106 is added to the piezoelectric layer 102 doped with rare earth elements, the sign of the sound velocity temperature coefficient and the bottom electrode 103, the piezoelectric layer 102 and the top
  • the electrode 101 is reversed, that is, has a positive temperature coefficient of sound velocity.
  • placing the temperature compensation layer 106 at the place where the stress generated when the resonator resonates is the largest, that is, the region where the acoustic energy is the most dense, can achieve the best temperature compensation effect.
  • the stress in the piezoelectric material will change, and only a part of the structure of the piezoelectric layer 102 is doped with the rare earth element Therefore, the stress of the piezoelectric layer 102 in the portion doped with the rare earth element is the largest, so that a thin temperature compensation layer 106 structure is added therein to achieve the best temperature compensation effect.
  • the thickness of the temperature compensation layer 106 is thin, it can reduce the loss of acoustic energy and improve the Q value of the resonator; and the stress in the piezoelectric layer can be changed by changing the doping method of the rare earth element in the piezoelectric layer
  • the changing situation can further flexibly change the position of the temperature compensation layer, which can make the resonator design more flexible without affecting its performance.
  • the electric dipole in the material of the piezoelectric layer 102 will change.
  • the material in the piezoelectric layer 102 will change. A larger mechanical response will be generated, which may enable the resonator to obtain a higher electromechanical coupling coefficient, which can compensate for the decrease in the resonator electromechanical coupling coefficient caused by the addition of the temperature compensation layer 106.
  • a part of the piezoelectric layer 102 near the bottom electrode 103 is doped with a rare earth element, that is, taking the direction shown in FIG. 2 as an example, the lower half of the piezoelectric layer 102 is subjected to Doping.
  • the temperature compensation layer 106 is located in the piezoelectric layer 102 doped with rare earth elements.
  • the piezoelectric layer 102 may have a single-layer structure or a multi-layer structure. Multilayer structure For example, a portion 1021 doped with rare earth elements is a one-layer structure, and a portion 1022 not doped with rare earth elements is another layer structure.
  • the piezoelectric layer 102 includes a first part 301, a second part 302 and a third part 303 in sequence.
  • the first part 301 is close to the top electrode 101
  • the third part 303 is close to the bottom electrode 103
  • the second part 302 is doped with a rare earth element, that is, taking the direction shown in FIG. 3 as an example,
  • the middle portion of the electrical layer 102 is doped.
  • the temperature compensation layer 106 is located in the second part 302.
  • the piezoelectric layer 102 may have a single-layer structure or a multi-layer structure.
  • the first part 301, the second part 302, and the third part 303 have a three-layer structure.
  • a part of the piezoelectric layer 102 near the top electrode 101 is doped with a rare earth element, that is, taking the direction shown in FIG. 4 as an example, the upper half of the piezoelectric layer 102 Doping.
  • the piezoelectric layer 102 may have a single-layer structure or a multi-layer structure.
  • a portion 1021 doped with rare earth elements is a one-layer structure, and a portion 1022 not doped with rare earth elements is another layer structure.
  • the temperature compensation layer 106 is located on the top electrode 101 and is surrounded by the top electrode 101.
  • the resonator Since the doped part in the piezoelectric layer 102 is located in the upper half, the resonator has the largest stress in the upper half of the piezoelectric layer 102, so the temperature compensation layer 106 is placed in the top electrode 101 The maximum stress in the device is closest), which can make the temperature compensation layer 106 have a thinner thickness to achieve a better temperature compensation effect. At the same time, because the thickness of the temperature compensation layer 106 is thinner, the energy loss therein is reduced, which in turn makes The Q value of the resonator is improved. If the temperature compensation layer 106 is placed in the lower electrode, to achieve the same temperature compensation effect, a thicker temperature compensation layer 106 is required, which will further decrease the electromechanical coupling coefficient and Q value of the resonator. Therefore, the asymmetric doping of the piezoelectric layer 102 can change the position and thickness of the temperature compensation layer 106 in the resonator by changing the doping method.
  • the temperature compensation layer 106 is usually composed of an insulating material, when the temperature compensation layer 106 is located between the two electrodes (the two electrodes refer to the top electrode 101 and the bottom electrode 103) and the piezoelectric layer 102, it acts as a series capacitor Part of the voltage between the two electrodes will fall on the temperature compensation layer 106, so that the voltage drop in the piezoelectric layer 102 decreases, and the electric field strength in the piezoelectric layer 102 also decreases accordingly. Therefore, the electromechanical coupling coefficient of the resonator will be affected.
  • the electrodes around the temperature compensation layer 106 have the same potential, so they are wrapped in the top electrode 101
  • the electric field strength in the temperature compensation layer 106 in is close to zero.
  • the voltage drops between the top electrode 101 and the bottom electrode 103 of the acoustic wave resonator are all located within the piezoelectric layer 102, so that the electromechanical coupling coefficient of the acoustic wave resonator is increased.
  • the integrity of the piezoelectric material in the piezoelectric layer 102 will not be damaged.
  • the second embodiment of the present invention relates to a resonator with a temperature compensation layer.
  • This embodiment is different from the first embodiment. The difference is that in this embodiment, the piezoelectric layer is doped with different proportions of rare earth elements in the thickness direction of the piezoelectric layer, and the proportion of rare earth elements doped in the direction from the bottom electrode to the top electrode is getting higher and higher .
  • the piezoelectric layer is doped with different proportions of rare earth elements in the thickness direction of the piezoelectric layer, and the proportion of rare earth elements doped in the direction from the bottom electrode to the top electrode is increasing.
  • the temperature compensation layer is located above the top electrode.
  • the temperature compensation layer is located in the top electrode and surrounded by the top electrode. The ratio of the doped rare earth element varies from 0 to 30%.
  • FIG. 5 takes three kinds of doped rare earth elements as an example for description, from the mark 501 and the mark 502 to The proportion of the rare earth element doped with the mark 503 gradually increases, and the piezoelectric layer 102 in the portion 504 is not doped with the rare earth element.
  • the piezoelectric layer 102 may have a single-layer structure or a multi-layer structure.
  • the portions indicated by the marks 501, 502, 503, and 504 in the piezoelectric layer 102 may be a single-layer structure or a four-layer structure. Therefore, the upper surface of the piezoelectric layer 102 has the greatest stress, so the thin temperature compensation layer 106 structure can be placed on the upper surface of the piezoelectric layer 102 to achieve the best temperature compensation effect. At the same time, since the thickness of the temperature compensation layer 106 is thin, the loss of sound wave energy therein can be reduced, and the Q value of the resonator can be improved. Moreover, due to the change of stress in the material of the piezoelectric layer 102 after the rare earth element is added, the electric dipole in the material of the piezoelectric layer 102 will change.
  • the material in the piezoelectric layer 102 When an electric field is applied to the piezoelectric material, the material in the piezoelectric layer 102 will change. A greater mechanical response will be generated, which can enable the resonator to obtain a higher electromechanical coupling coefficient, which can compensate for the decrease in the resonator electromechanical coupling coefficient caused by the addition of the temperature compensation layer. At the same time, since the temperature compensation layer is on the surface of the piezoelectric layer 102, the integrity of the piezoelectric material inside the piezoelectric layer 102 will not be damaged.
  • the temperature compensation layer 106 is located above the top electrode 101. Since the proportion of the rare earth element doped in the thickness direction of the piezoelectric layer 102 gradually increases, it has the greatest stress on the surface of the piezoelectric layer 102. At the same time, the thickness of the electrode for the resonator is generally thin, so placing the temperature compensation layer above the top electrode 101 can ensure the temperature compensation ability of the resonator, and the added temperature compensation layer will not affect the resonator.
  • the electromechanical coupling coefficient has an effect.
  • the position of the temperature compensation layer 106 is located in the top electrode 101, and the temperature compensation layer 106 is surrounded by the top electrode 101.
  • the electromechanical coupling coefficient of the resonator can be effectively improved, and the integrity of the piezoelectric material in the piezoelectric layer 102 can be ensured.
  • the third embodiment of the present invention relates to a resonator with a temperature compensation layer.
  • This embodiment is different from the first embodiment. The difference is that in this embodiment, the piezoelectric layer is doped with different proportions of rare earth elements in the thickness direction of the piezoelectric layer, and the proportion of rare earth elements doped in the direction from the top electrode to the bottom electrode is getting higher and higher .
  • the piezoelectric layer is doped with different proportions of rare earth elements in the thickness direction of the piezoelectric layer, and the proportion of rare earth elements doped in the direction from the top electrode to the bottom electrode is increasing.
  • the temperature compensation layer is located in the part of the piezoelectric layer doped with the highest proportion of rare earth elements.
  • the temperature compensation layer is located in the bottom electrode and surrounded by the bottom electrode.
  • the ratio of the rare earth element doped in the thickness direction of the piezoelectric layer 102 shown in FIG. 8 gradually decreases, and the typical doping ratio variation range may be 30% to 0%.
  • the proportion of rare earth elements doped from the mark 801, the mark 802 to the mark 803 gradually decreases, and the piezoelectric layer 102 in the mark 804 portion is not doped with rare earth element.
  • the piezoelectric layer 102 may have a single-layer structure or a multi-layer structure.
  • the portions indicated by the marks 801, 802, 803, and 804 in the piezoelectric layer 102 may be a single-layer structure or a four-layer structure.
  • the stress in the material of the piezoelectric layer 102 will change, while the piezoelectric layer 102 is doped with the rare earth element in the thickness direction.
  • the ratio gradually decreases, so that the lower surface of the piezoelectric layer 102 has the greatest stress, so the thin temperature compensation layer 106 structure can be placed on the lower surface of the piezoelectric layer 102 to achieve the best temperature compensation effect.
  • the thickness of the temperature compensation layer 106 is thin, the loss of sound wave energy therein can be reduced, and the Q value of the resonator can be improved.
  • the electric dipole in the material of the piezoelectric layer 102 will change.
  • the piezoelectric material layer material There will be a greater mechanical response in the middle, so that the resonator can obtain a higher electromechanical coupling coefficient, which can compensate for the decrease in the resonator electromechanical coupling coefficient caused by the addition of the temperature compensation layer.
  • the position of the temperature compensation layer 106 is located in the bottom electrode 103, and the temperature compensation layer 106 is surrounded by the top electrode 101.
  • the electromechanical coupling coefficient of the resonator can be effectively improved, and the integrity of the piezoelectric material in the piezoelectric layer 102 can be ensured.
  • the fourth embodiment of the present invention relates to a filter.
  • the filter includes a plurality of resonators with a temperature compensation layer according to the first, second, or third embodiment, and a plurality of the resonators are cascaded to form the filter.

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Abstract

一种带有温度补偿层的谐振器、滤波器。多个所述谐振器用于级联形成滤波器；其中所述谐振器包括位置关系依次相连的顶电极（101）、压电层（102）、底电极（103）、声反射结构（104）、基底（105）以及位于所述顶电极（101）或所述压电层（102）的温度补偿层（106）；所述压电层（102）的其中一部分掺杂有稀土元素。其可以在不影响谐振器其它性能的情况下，能够调节温度补偿层（106）材料的声速温度系数以调节温度补偿层（106）材料的温度补偿能力，从而使得谐振器的设计过程具有更强的灵活性。

Description

带有温度补偿层的谐振器、滤波器 技术领域
本发明涉及通信领域，特别地涉及一种带有温度补偿层的谐振器、滤波器。
背景技术
目前射频前端滤波器领域中，基于声表面波(SAW)技术和薄膜体声波(BAW)技术的滤波器由于器件的高性能表现、尺寸小型化而占据了市场的主导地位。相比SAW滤波器而言BAW滤波器解决方案在高频下能提供更加小的通带插损，更高地选择性，并且可长时间承受高功率，更好的静电放电(ESD)保护以及更加稳定的温度特性。基于这些优势，BAW滤波器技术在无线通讯应用的市场份额逐渐增大。
压电声波谐振器的压电层、金属层或电介层的厚度以及其内的声速都随温度的变化而变化，因此压电声波谐振器的谐振频率也随温度的变化而变化。尽管上述压电声波谐振器的各层随温度变化而产生的厚度膨胀或收缩会影响谐振频率，但各层内声波传播速度随温度的改变是影响压电声波谐振器谐振频率随温度改变的主要原因。目前应用在压电声波谐振器中的大部分材料都呈现出负的温度系数，即随温度的升高声速会变小，因为材料在较高温下会变“软化”(例如，跨原子力被减弱)。跨原子力的减小会导致材料弹性系数的减小，从而减小声速。由压电声波谐振器构成的射频(RF)滤波器通常有一个通带频率响应，压电声波谐振器的频率温度系数(TCF)会降低射频(RF)滤波器的制造良率，因为由压电声波谐振器所构成的设备或器件只有在一定温度范围内才能满足通带带宽的要求。
构成压电声波谐振器层叠结构的主要材料基本上都具有负的声速温度系数，而SiO 2(二氧化硅)材料具有正的声速温度系数，通过调整层叠结构中SiO 2以及其它各层材料的厚度，可以有效降低压电声波 谐振器频率随温度漂移。但是插入的温度补偿层结构会降低谐振器的机电耦合系数，同时随着温度补偿层厚度的增加也会使得谐振器的品质因数Q值降低。在一些滤波器的应用中，需要压电谐振器的谐振频率、机电耦合系数、谐振器品质因数、谐振器频率温度系数同时满足一定要求，而通过单纯调节谐振器层叠结构中SiO 2以及其它各层材料的厚度难以实现。
发明内容
有鉴于此，本发明提供一种带有温度补偿层的谐振器、滤波器，使得可以在不影响谐振器的其它性能的情况下，能够调节温度补偿层材料的声速温度系数以调节温度补偿层材料的温度补偿能力，从而使得谐振器的设计过程具有更强的灵活性。
为解决上述技术问题，本发明的实施例提供了一种带有温度补偿层的谐振器，多个所述谐振器用于级联形成滤波器。所述谐振器包括位置关系依次相连的顶电极、压电层、底电极、声反射结构、基底以及位于所述顶电极或所述压电层的温度补偿层。所述压电层的其中一部分掺杂有稀土元素。温度补偿层的厚度范围是
Figure PCTCN2018124080-appb-000001
(埃)至
Figure PCTCN2018124080-appb-000002
优选地可以是
Figure PCTCN2018124080-appb-000003
至
Figure PCTCN2018124080-appb-000004
本发明的实施例还提供了一种滤波器，所述滤波器包括多个上述谐振器，多个所述谐振器级联形成所述滤波器。
由于本发明的谐振器包括温度补偿层，所以可以提高谐振器温度补偿的能力，但是也会使得谐振器的机电耦合系数降低。同时如果温度补偿层的厚度太厚，还会导致谐振器的Q值(Q值即品质因数值)降低。在压电层其中一部分掺杂的稀土元素的原子半径通常比压电层本身的原子半径大，故会引起压电层的应力发生变化，而压电层中只有其中一部分掺杂了稀土元素，所以掺杂了稀土元素的那部分压电层的应力最大，从而在掺杂部分的压电层中加入较薄的温度补偿层就能起到最好的温补效果。同时，由于温度补偿层的厚度较薄，所以可以降低其中声波能量的损耗，提高谐振器的Q值；而且可以通过改变压电层中稀土元素的掺杂方式，来改变压电层中的应力变化情况，进而 可以灵活改变温度补偿层所在的位置，可以使得谐振器在设计时在不影响其性能的同时，能够具有更强的灵活性。再者，由于掺入稀土元素后压电层应力的变化，会导致压电层材料中的电偶极子发生改变，当对压电层施加一电场时，压电层的材料中就会产生更大的机械响应，从而可以使得谐振器获得更高的机电耦合系数，进而能够弥补由于加入温度补偿层后所导致的谐振器机电耦合系数降低的情况。
可选的，所述压电层中靠近所述顶电极的其中一部分掺杂有稀土元素；所述温度补偿层位于所述掺杂有稀土元素的部分压电层中。
可选的，所述压电层中靠近所述底电极的其中一部分掺杂有稀土元素；所述温度补偿层位于所述掺杂有稀土元素的部分压电层中。
可选的，所述压电层依次包括第一部位、第二部位以及第三部位；所述第一部位靠近所述顶电极，所述第三部位靠近所述底电极，所述第二部位掺杂有稀土元素；所述温度补偿层位于所述第二部位。
可选的，所述压电层中靠近所述顶电极的其中一部分掺杂有稀土元素；所述温度补偿层位于所述顶电极。
可选的，所述压电层在该压电层的厚度方向上掺杂不同比例的稀土元素，且由所述底电极至所述顶电极的方向上掺杂的稀土元素的比例越来越高。
可选的，所述温度补偿层位于所述顶电极的上方。
可选的，所述温度补偿层位于所述顶电极之中，且被所述顶电极包围。
可选的，所述压电层在该压电层的厚度方向上掺杂不同比例的稀土元素，且由所述顶电极至所述底电极的方向上掺杂的稀土元素的比例越来越高。
可选的，所述温度补偿层位于所述掺杂有稀土元素比例最高的部分压电层中。
可选的，所述温度补偿层位于所述底电极之中，且被所述底电极包围。
可选的，所述压电层为单层结构或多层结构。
可选的，所述稀土元素为以下任意一种或其任意组合：镧、铈、 镨、钕、钷、钐、铕、钆、铽、镝、钬、铒、铥、镱、镥、钇以及钪。
可选的，所述稀土元素为钪。
可选的，所述钪的掺杂量为0.5％-40％。
可选的，所述谐振器还包括位于所述压电层和所述基底之间的平坦层；所述平坦层位于所述底电极的其中一端且与所述底电极的末端对齐。
附图说明
附图用于更好地理解本发明，不构成对本发明的不当限定。其中：
图1是第一实施方式中带有温度补偿层的谐振器的结构示意图；
图2是第一实施方式中带有温度补偿层的谐振器的另一结构示意图；
图3是第一实施方式中带有温度补偿层的谐振器的另一结构示意图；
图4是第一实施方式中带有温度补偿层的谐振器的另一结构示意图；
图5是第二实施方式中带有温度补偿层的谐振器的结构示意图；
图6是第二实施方式中带有温度补偿层的谐振器的另一结构示意图；
图7是第二实施方式中带有温度补偿层的谐振器的另一结构示意图；
图8是第三实施方式中带有温度补偿层的谐振器的结构示意图；
图9是第三实施方式中带有温度补偿层的谐振器的另一结构示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合附图对本发明的各实施例进行详细的阐述。然而，本领域的普通技术人员可以理解，在本发明各实施例中，为了使读者更好地理解本申请而提出了许多技术细节。但是，即使没有这些技术细节和基于以下 各实施例的种种变化和修改，也可以实现本申请所要求保护的技术方案。
本发明的第一实施例涉及一种带有温度补偿层的谐振器。本实施例中带有温度补偿层的谐振器为薄膜体声波谐振器。多个所述谐振器用于级联形成滤波器。所述谐振器包括位置关系依次相连的顶电极、压电层、底电极、声反射结构、基底以及位于所述顶电极或所述压电层的温度补偿层。所述压电层的其中一部分掺杂有稀土元素。其中，顶电极和底电极的材料可以由金(Au)、钨(W)、钼(Mo)、铂(Pt)，钌(Ru)、铱(Ir)、钛钨(TiW)、铝(Al)、钛(Ti)等类似金属形成。
压电层的材料可以为氮化铝(AlN)、氧化锌(ZnO)、锆钛酸铅(PZT)、铌酸锂(LiNbO 3)、石英(Quartz)、铌酸钾(KNbO 3)或钽酸锂(LiTaO 3)等。上述材料为压电薄膜，厚度小于10微米。氮化铝薄膜为多晶形态或者单晶形态，生长方式为薄膜溅射(sputtering)或者有机金属化学气相沉积法(MOCVD)。
温度补偿层的材料可以为多晶硅、硼磷酸盐玻璃(BSG)、二氧化硅(SiO 2)、铬(Cr)或碲氧化物(TeO (x))。本发明实施例中的温度补偿层，在尽可能不影响谐振器其他性能的同时，具有较薄的厚度而且可以灵活调整位置。温度补偿层的厚度范围是
Figure PCTCN2018124080-appb-000005
(埃)至
Figure PCTCN2018124080-appb-000006
优选地可以是
Figure PCTCN2018124080-appb-000007
至
Figure PCTCN2018124080-appb-000008
如图1所示，所述压电层102中靠近所述顶电极101的其中一部分掺杂有稀土元素，即以图1所示方向为例，对压电层102的上半部分进行掺杂。所述温度补偿层106位于所述掺杂有稀土元素的部分压电层102中。具体地说，图1中的带有温度补偿层106的谐振器为一种薄膜体声波谐振器。该带有温度补偿层106的谐振器除包括位置关系依次相连的顶电极101、压电层102、底电极103、声反射结构104、基底105以及位于所述顶电极101或所述压电层102的温度补偿层106以外，还包括平坦层107。平坦层107的材料可以为二氧化硅、氮化硅、碳化硅等合适的介质材料。平坦层107位于所述压电层102和所述基底105之间，且所述平坦层107位于所述底电极103的其中一端且与所述底电极103的末端对齐，从而形成平整光滑的表面，有助于在底 电极103与平坦层107的连接处沉积良好的压电薄膜。所述压电层102可以为单层结构，也可以为多层结构。多层结构比如，掺杂有稀土元素的一部分1021为一层结构，没有掺杂稀土元素的一部分1022为另一层结构。
值得一提的是，在图1中声反射结构104为嵌入基底105中的空腔所构成，但是任何其它的声反射结构104如布拉格反射器也同样适用。其中，压电层102典型的压电材料为氮化铝(AlN)。氮化铝为纤锌矿结构即六方晶系。加入温度补偿层106之后虽然能够提高上述谐振器的温度补偿能力，但是也会使得谐振器的机电耦合系数降低，同时如果温度补偿层106厚度太厚的话，也会降低谐振器的Q值。因此为了弥补谐振器机电耦合系数的降低以及灵活的改变温度补偿层106的位置和厚度，对压电层102进行了不对称掺杂即在压电层102的其中一部分掺杂有稀土元素。所述稀土元素可以为以下任意一种或其任意组合：镧(La)、铈(Ce)、镨(Pr)、钕(Nd)、钷(Pm)、钐(Sm)、铕(Eu)、钆(Gd)、铽(Tb)、镝(Dy)、钬(Ho)、铒(Er)、铥(Tm)、镱(Yb)、镥(Lu)、钇(Y)以及钪(Sc)。其中，所述稀土元素优选为钪。当稀土元素掺杂进入压电层102的材料中时，会替换AlN晶体结构中的Al原子，形成Al 1-aSc aN结构，其中a代表Sc的原子含量，典型的Sc掺杂量可以为0.5％-40％。
本实施例中，构成薄膜体声波谐振器的底电极103、压电层102以及顶电极101具有负的温度系数。当温度升高时，在底电极103、压电层102以及顶电极101中声波传播速度降低，谐振器的谐振频率降低。因此未经温度补偿层106的压电声波谐振器的频率温度系数为负。为补偿当温度变化而引起的谐振器谐振频率的变化，在掺杂有稀土元素的部分压电层102中添加温度补偿层106，其声速温度系数符号与底电极103、压电层102以及顶电极101相反，即具有正声速温度系数。一般地为了得到低的频率温度系数，将温度补偿层106放在谐振器发生谐振时产生的应力最大处即声波能量最密集区，可以起到温度补偿的效果最好。
在本发明实施例中，由于掺杂稀土元素的原子半径比铝元素的原 子半径大，会引起压电材料中的应力发生变化，而压电层102中只有其中一部分结构中掺杂了稀土元素，所以在掺杂有稀土元素的部分压电层102的应力最大，从而在其中加入较薄的温度补偿层106结构就能起到最好的温补效果。同时由于温度补偿层106的厚度较薄，所以可以降低其中声波能量的损耗，提高谐振器的Q值；而且可以通过改变压电层中稀土元素的掺杂方式，来改变压电层中的应力变化情况，进而可以灵活改变温度补偿层所在的位置，可以使得谐振器在设计时在不影响其性能的同时，能够具有更强的灵活性。而且由于掺入稀土元素后压电层102中应力的变化，会导致压电层102材料中的电偶极子发生改变，当对压电层102施加一电场时，压电层102材料中就会产生更大的机械响应，从而可以使得谐振器获得更高的机电耦合系数，进而能够弥补由于加入温度补偿层106后所导致的谐振器机电耦合系数的降低。
或者，如图2所示，所述压电层102中靠近所述底电极103的其中一部分掺杂有稀土元素，即以图2所示方向为例，对压电层102的下半部分进行掺杂。所述温度补偿层106位于所述掺杂有稀土元素的部分压电层102中。所述压电层102可以为单层结构，也可以为多层结构。多层结构比如，掺杂有稀土元素的一部分1021为一层结构，没有掺杂稀土元素的一部分1022为另一层结构。
或者，如图3所示，所述压电层102依次包括第一部位301、第二部位302以及第三部位303。所述第一部位301靠近所述顶电极101，所述第三部位303靠近所述底电极103，所述第二部位302掺杂有稀土元素，即以图3所示方向为例，对压电层102的中间部分进行掺杂。所述温度补偿层106位于所述第二部位302。所述压电层102可以为单层结构，也可以为多层结构。多层结构比如，第一部位301、第二部位302以及第三部位303为三层结构。
或者，如图4所示，所述压电层102中靠近所述顶电极101的其中一部分掺杂有稀土元素，即以图4所示方向为例，对压电层102的上半部分进行掺杂。所述压电层102可以为单层结构，也可以为多层结构。多层结构比如，掺杂有稀土元素的一部分1021为一层结构，没 有掺杂稀土元素的一部分1022为另一层结构。所述温度补偿层106位于所述顶电极101，且被所述顶电极101包围。由于在压电层102中掺杂的部分位于其上半部，所以谐振器在压电层102上半部分中的应力最大，因此将温度补偿层106放在顶电极101中(此时离谐振器中应力最大处最近)，可以使得温度补偿层106具有较薄的厚度即可以达到更好的温补效果，同时由于温度补偿层106的厚度较薄，因此降低了其中能量的损耗，进而使得谐振器的Q值得到提高。如果将温度补偿层106放在下电极中，要达到相同的温补效果，则需要更厚的温度补偿层106，这样会使得谐振器的机电耦合系数和Q值进一步下降。因此对压电层102进行不对称掺杂，通过改变掺杂的方式即可以改变温度补偿层106在谐振器中的位置和厚度。
另外，由于温度补偿层106通常是由绝缘材料组成，所以当温度补偿层106位于两电极(两电极指的是上述顶电极101和底电极103)与压电层102之间就作为一个串联电容，两电极之间的部分电压会落在温度补偿层106上，从而使得压电层102内的压降减小，压电层102内的电场强度也相应减小。因此对谐振器的机电耦合系数会产生影响。当温度补偿层106包裹在顶电极101之内后，由于在温度补偿层106的周围电极是相连接的，故在温度补偿层106周围的电极中具有相同的电势，所以在包裹在顶电极101中的温度补偿层106中的电场强度接近为零。声波谐振器顶电极101和底电极103之间的压降全部都位于压电层102之内，使得声波谐振器的机电耦合系数相比增大。另外，由于温度补偿层106没有在压电层102之内，因此不会破坏压电层102中压电材料的完整性。
本发明的第二实施例涉及一种带有温度补偿层的谐振器，本实施与第一实施例有所不同。不同之处在于：本实施例中压电层在该压电层的厚度方向上掺杂不同比例的稀土元素，且由底电极至顶电极的方向上掺杂的稀土元素的比例越来越高。
所述压电层在该压电层的厚度方向上掺杂不同比例的稀土元素，且由所述底电极至所述顶电极的方向上掺杂的稀土元素的比例越来越 高。其中，所述温度补偿层位于所述顶电极的上方。或者，所述温度补偿层位于所述顶电极之中，且被所述顶电极包围。掺杂的所述稀土元素的比例变化范围为0～30％。
具体地说，如图5所示，在本发明实施例中，由于掺杂的稀土元素原子半径比铝元素的原子半径大，会引起压电层102材料中的应力发生变化。而由于压电层102在图5所示的厚度方向上掺杂的稀土元素的比例逐渐增大，图5中以掺杂三种比例的稀土元素为例进行说明，从标识501、标识502至标识503掺杂的稀土元素的比例逐渐增大，而标识504部分的压电层102没有掺杂稀土元素。压电层102可以为单层结构也可以为多层结构。即压电层102中的标识501、标识502、标识503以及标识504所指示的部分可以为单层结构也可以为四层结构。所以在压电层102的上表面具有最大的应力，因此可以将较薄的温度补偿层106结构放在压电层102的上表面就能起到最好的温补效果。同时由于温度补偿层106的厚度较薄，所以可以降低其中声波能量的损耗，提高谐振器的Q值。而且由于掺入稀土元素后压电层102材料中应力的变化，会导致压电层102材料中的电偶极子发生改变，当对压电材料施加一电场时，压电层102材料中就会产生更大的机械响应，从而可以使得谐振器获得更高的机电耦合系数，进而能够弥补由于加入温度补偿层后所导致的谐振器机电耦合系数的降低。同时由于温度补偿层在压电层102的表面，不会破坏压电层102内部压电材料的完整性。
如图6所示，温度补偿层106位于顶电极101之上。由于压电层102在厚度方向上掺杂的稀土元素的比例逐渐增大，使其在压电层102的表面具有最大的应力。同时对于谐振器来说其电极厚度一般都比较薄，所以将温度补偿层放在顶电极101的上方，能够在保证谐振器温补能力的同时，增加的温度补偿层也不会对谐振器的机电耦合系数产生影响。
如图7所示，温度补偿层106的位置位于顶电极101之中，并且温度补偿层106被顶电极101所包围。在本发明实施例中能够在保证温度补偿层106的温补的能力的同时，能够有效提升谐振器的机电耦 合系数，而且能够保证压电层102中压电材料的完整性。
本发明的第三实施例涉及一种带有温度补偿层的谐振器，本实施与第一实施例有所不同。不同之处在于：本实施例中压电层在该压电层的厚度方向上掺杂不同比例的稀土元素，且由顶电极至底电极的方向上掺杂的稀土元素的比例越来越高。
所述压电层在该压电层的厚度方向上掺杂不同比例的稀土元素，且由所述顶电极至所述底电极的方向上掺杂的稀土元素的比例越来越高。其中，所述温度补偿层位于所述掺杂有稀土元素比例最高的部分压电层中。或者，所述温度补偿层位于所述底电极之中，且被所述底电极包围。
具体地说，如图8所示，压电层102在图8所示的厚度方向上掺杂的稀土元素的比例逐渐降低，典型的掺杂比例变化范围可以为30％～0％。图8中以掺杂三种比例的稀土元素为例进行说明，从标识801、标识802至标识803掺杂的稀土元素的比例逐渐减小，而标识804部分的压电层102没有掺杂稀土元素。压电层102可以为单层结构也可以为多层结构。即压电层102中的标识801、标识802、标识803以及标识804指示的部分可以为单层结构也可以为四层结构。在本实施例中，由于掺杂稀土元素的原子半径比铝元素的原子半径大，会引起压电层102材料中的应力发生变化，而压电层102在厚度方向上掺杂的稀土元素的比例逐渐减小，所以在压电层102的下表面具有最大的应力，因此可以将较薄的温度补偿层106结构放在压电层102的下表面就能起到最好的温补效果。同时由于温度补偿层106的厚度较薄，所以可以降低其中声波能量的损耗，提高谐振器的Q值。而且由于掺入稀土元素后压电层102材料中应力的变化，会导致压电层102材料中的电偶极子发生改变，当对压电层102材料施加一电场时，压电材层料中就会产生更大的机械响应，从而可以使得谐振器获得更高的机电耦合系数，进而能够弥补由于加入温度补偿层后所导致的谐振器机电耦合系数的降低。
如图9所示，温度补偿层106的位置位于底电极103之中，并且 温度补偿层106被顶电极101所包围。在本实施例中能够在保证温度补偿层106的温补的能力的同时，能够有效提升谐振器的机电耦合系数，而且能够保证压电层102中压电材料的完整性。
本发明的第四实施例涉及滤波器。所述滤波器包括多个第一、第二或第三实施例所述的带有温度补偿层的谐振器，多个所述谐振器级联形成所述滤波器。
上述具体实施方式，并不构成对本发明保护范围的限制。本领域技术人员应该明白的是，取决于设计要求和其他因素，可以发生各种各样的修改、组合、子组合和替代。任何在本发明的精神和原则之内所作的修改、等同替换和改进等，均应包含在本发明保护范围之内。

Claims (18)

  1. 一种带有温度补偿层的谐振器，其特征在于，多个所述谐振器用于级联形成滤波器；
    所述谐振器包括位置关系依次相连的顶电极、压电层、底电极、声反射结构、基底以及位于所述顶电极或所述压电层的温度补偿层，其中所述温度补偿层的厚度范围是
    Figure PCTCN2018124080-appb-100001
    至
    Figure PCTCN2018124080-appb-100002
    所述压电层的其中一部分掺杂有稀土元素。
  2. 根据权利要求1所述的带有温度补偿层的谐振器，其特征在于，所述温度补偿层的厚度范围是
    Figure PCTCN2018124080-appb-100003
    至
    Figure PCTCN2018124080-appb-100004
  3. 根据权利要求1或2所述的带有温度补偿层的谐振器，其特征在于，所述压电层的所述其中一部分是靠近所述顶电极的一部分，或者是靠近所述底电极的一部分；
    所述温度补偿层位于所述掺杂有稀土元素的部分压电层中。
  4. 根据权利要求1或2所述的带有温度补偿层的谐振器，其特征在于，所述压电层依次包括第一部位、第二部位以及第三部位；
    所述第一部位靠近所述顶电极，所述第三部位靠近所述底电极，所述第二部位掺杂有稀土元素；
    所述温度补偿层位于所述第二部位。
  5. 根据权利要求1或2所述的带有温度补偿层的谐振器，其特征在于，所述压电层中靠近所述顶电极的其中一部分掺杂有稀土元素；
    所述温度补偿层位于所述顶电极，且被所述顶电极包围。
  6. 根据权利要求1或2所述的带有温度补偿层的谐振器，其特征在于，所述压电层在该压电层的厚度方向上掺杂不同比例的稀土元素，且由所述底电极至所述顶电极的方向上掺杂的稀土元素的比例越来越高。
  7. 根据权利要求7所述的带有温度补偿层的谐振器，其特征在于，所述温度补偿层位于所述顶电极的上方。
  8. 根据权利要求7所述的带有温度补偿层的谐振器，其特征在于，所述温度补偿层位于所述顶电极之中，且被所述顶电极包围。
  9. 根据权利要求1所述的带有温度补偿层的谐振器，其特征在于，所述压电层在该压电层的厚度方向上掺杂不同比例的稀土元素，且由所述顶电极至所述底电极的方向上掺杂的稀土元素的比例越来越高。
  10. 根据权利要求9所述的带有温度补偿层的谐振器，其特征在于，所述温度补偿层位于所述掺杂有稀土元素比例最高的部分压电层中。
  11. 根据权利要求9所述的带有温度补偿层的谐振器，其特征在于，所述温度补偿层位于所述底电极之中，且被所述底电极包围。
  12. 根据权利要求1至11中任意一项所述的带有温度补偿层的谐振器，其特征在于，所述压电层为单层结构或多层结构。
  13. 根据权利要求1所述的谐振器，其特征在于，所述压电层的材料成分为氮化铝，所述氮化铝中掺杂稀土元素。
  14. 根据权利要求1所述的带有温度补偿层的谐振器，其特征在于，所述稀土元素为钪。
  15. 根据权利要求14所述的带有温度补偿层的谐振器，其特征在于，所述钪的掺杂量为0.5％-40％。
  16. 根据权利要求1所述的带有温度补偿层的谐振器，其特征在于，所述温度补偿层的材料为：为多晶硅、硼磷酸盐玻璃(BSG)、二氧化硅(SiO 2)、铬(Cr)或碲氧化物(TeO (x))。
  17. 根据权利要求1所述的带有温度补偿层的谐振器，其特征在于，所述谐振器还包括位于所述压电层和所述基底之间的平坦层；
    所述平坦层位于所述底电极的其中一端且与所述底电极的末端对齐。
  18. 一种滤波器，其特征在于，所述滤波器包括多个如权利要求1至17中任意一项所述的谐振器，多个所述谐振器级联形成所述滤波器。
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003017481A1 (de) * 2001-08-14 2003-02-27 Koninklijke Philips Electronics N.V. Filteranordnung mit volumenwellen-resonator
CN104868873A (zh) * 2015-05-27 2015-08-26 上海交通大学 一种多层复合结构声表面波器件基底
CN104883153A (zh) * 2014-02-27 2015-09-02 安华高科技通用Ip(新加坡)公司 具有掺杂压电层的体声波谐振器
CN105048986A (zh) * 2014-04-30 2015-11-11 安华高科技通用Ip(新加坡)公司 具有空气环及温度补偿层的声谐振器装置
US20160373083A1 (en) * 2015-06-16 2016-12-22 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave resonator and filter including the same
CN106716826A (zh) * 2014-08-21 2017-05-24 追踪有限公司 具有改善的温度补偿的微声构件

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003017481A1 (de) * 2001-08-14 2003-02-27 Koninklijke Philips Electronics N.V. Filteranordnung mit volumenwellen-resonator
CN104883153A (zh) * 2014-02-27 2015-09-02 安华高科技通用Ip(新加坡)公司 具有掺杂压电层的体声波谐振器
CN105048986A (zh) * 2014-04-30 2015-11-11 安华高科技通用Ip(新加坡)公司 具有空气环及温度补偿层的声谐振器装置
CN106716826A (zh) * 2014-08-21 2017-05-24 追踪有限公司 具有改善的温度补偿的微声构件
CN104868873A (zh) * 2015-05-27 2015-08-26 上海交通大学 一种多层复合结构声表面波器件基底
US20160373083A1 (en) * 2015-06-16 2016-12-22 Samsung Electro-Mechanics Co., Ltd. Bulk acoustic wave resonator and filter including the same

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