WO2020132995A1 - 具有集成电路模块和声波滤波器模块的柔性系统 - Google Patents

具有集成电路模块和声波滤波器模块的柔性系统 Download PDF

Info

Publication number
WO2020132995A1
WO2020132995A1 PCT/CN2018/124076 CN2018124076W WO2020132995A1 WO 2020132995 A1 WO2020132995 A1 WO 2020132995A1 CN 2018124076 W CN2018124076 W CN 2018124076W WO 2020132995 A1 WO2020132995 A1 WO 2020132995A1
Authority
WO
WIPO (PCT)
Prior art keywords
flexible
integrated circuit
circuit module
lead
substrate
Prior art date
Application number
PCT/CN2018/124076
Other languages
English (en)
French (fr)
Inventor
孙崇玲
庞慰
张孟伦
杨清瑞
Original Assignee
天津大学
诺思(天津)微系统有限责任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 天津大学, 诺思(天津)微系统有限责任公司 filed Critical 天津大学
Priority to PCT/CN2018/124076 priority Critical patent/WO2020132995A1/zh
Publication of WO2020132995A1 publication Critical patent/WO2020132995A1/zh

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits

Definitions

  • the present invention relates to the field of semiconductor technology, and in particular to a flexible system having an integrated circuit module and an acoustic wave filter module.
  • Smartphones are the most common application scenario for electronic devices.
  • the radio frequency communication part of the smartphone includes both the acoustic wave filter module and the integrated circuit module.
  • Traditional smartphones are based on non-flexible silicon-based devices. With the growing consumer demand for wearables, the replacement of traditional hard integrated circuits by flexible electronic devices in recent years is the future development trend of electronic technology.
  • the processing technology of the integrated circuit module and the acoustic wave filter module is not the same, and the two cannot be directly processed on the same substrate. Therefore, how to realize a flexible system including the interconnection of the integrated circuit module and the acoustic wave filter module has become an existing Difficulties in technology.
  • the present invention provides a flexible system with an integrated circuit module and an acoustic wave filter, which is helpful to realize the flexibility of the wireless signal transmission and reception system.
  • the invention provides a flexible system with an integrated circuit module and an acoustic wave filter module, including a flexible substrate, a filter module, an integrated circuit module, a first metal interconnection, a second metal interconnection, a first lead, and a second lead 3.
  • a flexible packaging structure wherein: the top surface of the flexible substrate has a cavity; the filter module is located above the cavity, and the filter module includes an input port and an output port; Connected to the input port, the second metal interconnect is in contact with the output port; the integrated circuit module is located outside the flexible substrate; the first lead and the second lead are located on the flexible substrate Internally, the first lead is used to connect the first metal interconnect to the first electrical pin in the integrated circuit module, and the second lead is used to connect the second metal interconnect to the A second electrical pin in the integrated circuit module; the flexible packaging structure covers the filter module, the first metal interconnect and the second metal interconnect.
  • the integrated circuit module is located on the top of the flexible substrate, and the integrated circuit module and the filter module have no overlap in the vertical direction.
  • the integrated circuit module is located at the bottom of the flexible substrate, and the integrated circuit module and the filter module overlap in the vertical direction.
  • the flexible substrate includes a flexible upper substrate and a flexible lower substrate, the cavity is located on a top surface of the flexible upper substrate; and the first lead includes: located on the flexible upper substrate A first lead upper section in the bottom, a first lead lower section in the flexible lower substrate, a position between the flexible upper substrate and the flexible lower substrate and connecting the first lead upper section and the first lead lower section A first conductive film; the second lead includes: a second lead upper section in the flexible upper substrate, a second lead lower section in the flexible lower substrate, a flexible upper substrate and a flexible lower substrate A second conductive film between and connecting the upper section of the second lead and the lower section of the second lead.
  • the integrated circuit module is located on top of the flexible lower substrate, and the integrated circuit module and the filter module have no overlap in the vertical direction.
  • the integrated circuit module is located at the bottom of the flexible lower substrate, and the integrated circuit module and the filter module overlap in the vertical direction.
  • materials of the input port, the output port, the first metal interconnection, the second metal interconnection, the first lead, and the second lead include: gold, tungsten, molybdenum , Platinum, ruthenium, iridium, germanium, copper, titanium, titanium tungsten, aluminum, chromium or arsenic doped gold.
  • the material of the piezoelectric layer includes: aluminum nitride, doped aluminum nitride, zinc oxide, lead zirconate titanate, lithium niobate, quartz, potassium niobate, or lithium tantalate.
  • doped aluminum nitride contains at least one rare earth element
  • the material of the flexible substrate includes: silicon, gallium arsenide, steel, paper, silk, plastic, polyimide, parylene, polycarbonate, polyester resin, polyethylene naphthalate Alcohol ester, polyethersulfone, polyetherimide, polydimethylsiloxane, polyvinyl alcohol or fluoropolymer.
  • the flexible packaging structure and the material of the polymer include: polyimide, parylene, polycarbonate, polyester resin, polyethylene naphthalate, polyethersulfone, polyether Imide, polydimethylsiloxane, polyvinyl alcohol or fluoropolymer.
  • the integrated circuit module includes one or more of the following: a power amplifier, a low-noise amplifier, a radio frequency antenna, a radio frequency switch, a modem, and a digital-to-analog converter.
  • Figure 1 is a schematic diagram of a filter with a ladder structure
  • FIG. 2 is a cross-sectional view of a flexible system having an integrated circuit module and an acoustic wave filter module according to the first embodiment of the present invention
  • FIG. 3 is a cross-sectional view of a flexible system having an integrated circuit module and an acoustic wave filter module according to a second embodiment of the present invention
  • FIG. 4 is a cross-sectional view of a flexible system having an integrated circuit module and an acoustic wave filter module according to a third embodiment of the present invention
  • FIG. 5 is a cross-sectional view of a flexible system having an integrated circuit module and an acoustic wave filter module according to a fourth embodiment of the present invention.
  • first and second are used for description purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features.
  • the features defined as “first” and “second” may explicitly or implicitly include one or more of the features.
  • the meaning of “plurality” is two or more, unless otherwise specifically limited.
  • the terms “installation”, “connected”, “connected”, “fixed” and other terms should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection , Or integrally connected; it can be a mechanical connection or an electrical connection; it can be directly connected, or it can be indirectly connected through an intermediary, or it can be the connection between two components.
  • installation can be a fixed connection or a detachable connection , Or integrally connected; it can be a mechanical connection or an electrical connection; it can be directly connected, or it can be indirectly connected through an intermediary, or it can be the connection between two components.
  • the first feature “above” or “below” the second feature may include the first and second features in direct contact, or may include the first and second features Not direct contact but contact through another feature between them.
  • the first feature is “above”, “above” and “above” the second feature includes that the first feature is directly above and obliquely above the second feature, or simply means that the first feature is higher in level than the second feature.
  • the first feature is “below”, “below”, and “below” the second feature includes that the first feature is directly below and obliquely below the second feature, or simply means that the first feature is less horizontal than the second feature.
  • the flexible system having an integrated circuit module and an acoustic wave filter module may include: a flexible substrate, a filter module, an integrated circuit module, a first metal interconnection, a second metal interconnection, a first lead, a first Two-lead, flexible packaging structure.
  • the top surface of the flexible substrate has a cavity.
  • the filter module is located above the cavity, and the filter module includes an input port and an output port.
  • the first metal interconnect is in contact with the input port, and the second metal interconnect is in contact with the output port.
  • the integrated circuit module is located outside the flexible substrate.
  • the first lead and the second lead are located inside the flexible substrate, the first lead is used to connect the first metal interconnection to the first electrical pin in the integrated circuit module, and the second lead is used to connect the second metal interconnection and integration The second electrical pin in the circuit module.
  • the flexible packaging structure covers the filter module, the first metal interconnect and the second metal interconnect.
  • the filter module is embedded in the flexible packaging structure, and the integrated circuit module is integrated on the flexible substrate, due to the underlying substrate And the packaging structure located above is a flexible structure, so the entire system has the advantage of good flexibility.
  • the materials of the input port, output port, first metal layer, second metal layer, first metal interconnection, and second metal interconnection include: gold (Au), tungsten (W), molybdenum (Mo) , Platinum (Pt), ruthenium (Ru), iridium (Ir), germanium (Ge), copper (Cu), titanium tungsten (TiW), aluminum (Al), chromium (Cr), arsenic doped gold and other similar metals.
  • the material of the piezoelectric layer can be aluminum nitride (AlN), doped aluminum nitride (doped AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO 3 ), quartz (Quartz) , Potassium niobate (KNbO 3 ) or lithium tantalate (LiTaO 3 ) and other materials, the above materials are piezoelectric thin films, and the thickness is less than 10 microns.
  • the aluminum nitride thin film is in a polycrystalline or single crystal form, and the growth method is thin film sputtering (sputtering) or organic metal chemical vapor deposition (MOCVD).
  • the doped AlN contains at least one rare earth element, such as scandium (Sc), yttrium (Y), lanthanum (La), erbium (Er), and ytterbium (Yb).
  • rare earth element such as scandium (Sc), yttrium (Y), lanthanum (La), erbium (Er), and ytterbium (Yb).
  • the material of the flexible substrate can be ultra-thin silicon, gallium arsenide, ultra-thin steel sheet, paper, silk, plastic, polyimide (PI), parylene (Parylene), polycarbonate (PC) , Polyester resin (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polyetherimide (PEI), polydimethylsiloxane (PDMS), polyvinyl alcohol ( PVA), and various fluoropolymers (FEP), etc.
  • PI polyimide
  • PC polycarbonate
  • PET polyethylene naphthalate
  • PES polyethersulfone
  • PEI polyetherimide
  • PDMS polydimethylsiloxane
  • PVA polyvinyl alcohol
  • FEP fluoropolymers
  • Flexible packaging and polymer materials can be polyimide (PI), parylene (Parylene), polycarbonate (PC), polyester resin (PET), polyethylene naphthalate (PEN), Polyethersulfone (PES), polyetherimide (PEI), polydimethylsiloxane (PDMS), polyvinyl alcohol (PVA), and various fluoropolymers (FEP).
  • PI polyimide
  • PC polycarbonate
  • PET polyester resin
  • PEN polyethylene naphthalate
  • PES polyethersulfone
  • PEI polyetherimide
  • PDMS polydimethylsiloxane
  • PVA polyvinyl alcohol
  • FEP fluoropolymers
  • the integrated circuit module may include: electronic components used in wireless transceiver electronic systems such as power amplifiers, low noise amplifiers, radio frequency antennas, radio frequency switches, modems, and digital-to-analog converters.
  • a thin-film bulk acoustic resonator can be connected according to a certain topology structure to construct a filter device.
  • the most common resonator connection topology structure of the filter is the ladder structure, as shown in Figure 1, the input and output ports of the filter Located on different resonators, it can be drawn from the bottom electrode of the corresponding resonator, or from the top electrode.
  • the resonator includes a bottom electrode, a piezoelectric layer, and a top electrode arranged in order from bottom to top.
  • the bottom electrode is used as the input port and the top electrode is used as the output port, but the application of the present invention is not limited to this.
  • the filter module also has a ground port.
  • FIG. 2 is a cross-sectional view of a flexible system having an integrated circuit module and an acoustic wave filter according to the first embodiment of the present invention.
  • integrated circuit modules are placed side-by-side on the substrate of the flexible acoustic wave filter, and interconnected through pre-processed leads in the substrate.
  • the system mainly includes: a flexible substrate 10, a filter module 20, an integrated circuit module 30, a first metal interconnection 41, a second metal interconnection 42, a first lead 51, a second lead 52, Flexible packaging structure 60.
  • the top surface of the flexible substrate 10 has a cavity 100.
  • the filter module 20 is located above the cavity 100.
  • the filter module 20 includes an input port 201, a piezoelectric layer 202, and an output port 203 arranged in this order from bottom to top.
  • the first metal interconnect 41 is in contact with the input port 201
  • the second metal interconnect 42 is in contact with the output port 203.
  • the integrated circuit module 30 is located outside the flexible substrate 10.
  • the first lead 51 and the second lead 52 are located inside the flexible substrate 10, the first lead 51 is used to connect the first metal interconnection 41 and the first electrical pin in the integrated circuit module 30, and the second lead 52 is used to connect The second metal interconnect 42 and the second electrical pin in the integrated circuit module 30.
  • the flexible packaging structure 60 covers the filter module 20, the first metal interconnection 41 and the second metal interconnection 42.
  • the integrated circuit module 30 is located on top of the flexible substrate 10, and the integrated circuit module 30 and the filter module 20 do not overlap in the vertical direction.
  • FIG. 3 is a cross-sectional view of a flexible system having an integrated circuit module and an acoustic wave filter according to a second embodiment of the invention.
  • the integrated circuit module is placed under the substrate of the flexible acoustic wave filter, and interconnected through the pre-processed leads in the substrate, which is more space-saving than the first embodiment.
  • the system mainly includes: a flexible substrate 10, a filter module 20, an integrated circuit module 30, a first metal interconnection 41, a second metal interconnection 42, a first lead 51, a second lead 52, Flexible packaging structure 60.
  • the top surface of the flexible substrate 10 has a cavity 100.
  • the filter module 20 is located above the cavity 100.
  • the filter module 20 includes an input port 201, a piezoelectric layer 202, and an output port 203 arranged in this order from bottom to top.
  • the first metal interconnect 41 is in contact with the input port 201
  • the second metal interconnect 42 is in contact with the output port 203.
  • the integrated circuit module 30 is located outside the flexible substrate 10.
  • the first lead 51 and the second lead 52 are located inside the flexible substrate 10, the first lead 51 is used to connect the first metal interconnection 41 and the first electrical pin in the integrated circuit module 30, and the second lead 52 is used to connect The second metal interconnect 42 and the second electrical pin in the integrated circuit module 30.
  • the flexible packaging structure 60 covers the filter module 20, the first metal interconnection 41 and the second metal interconnection 42.
  • the integrated circuit module 30 is located at the bottom of the flexible substrate 10, and the integrated circuit module 30 and the filter module 20 overlap in the vertical direction.
  • the system mainly includes: a flexible substrate, a filter module 20, an integrated circuit module 30, a first metal interconnection 41, a second metal interconnection 42, a first lead, a second lead, and a flexible packaging structure 60.
  • the flexible substrate includes a flexible upper substrate 101 and a flexible lower substrate 102, and the top surface of the flexible upper substrate 101 has a cavity 100.
  • the first lead is used to connect the first metal interconnect 41 to the first electrical pin in the integrated circuit module 30, and the second lead is used to connect the second metal interconnect 42 to the second electrical pin in the integrated circuit module 30 foot.
  • the first lead includes: a first lead upper section 511 located in the flexible upper substrate 101, a first lead lower section 512 located in the flexible lower substrate 102, a position between the flexible upper substrate 101 and the flexible lower substrate 102, and connecting the first A first conductive film 513 of a lead upper section 511 and a first lead lower section 512.
  • the second lead includes: a second lead upper section 521 located in the flexible upper substrate 101, a second lead lower section 522 located in the flexible lower substrate 102, located between the flexible upper substrate 101 and the flexible lower substrate 102 and connected to the first The second conductive film 523 of the upper section 521 of the second lead and the lower section 522 of the second lead.
  • the integrated circuit module 30 is located on top of the flexible lower substrate 102, and the integrated circuit module 30 and the filter module 20 have no overlap in the vertical direction.
  • the system mainly includes: a flexible substrate, a filter module 20, an integrated circuit module 30, a first metal interconnection 41, a second metal interconnection 42, a first lead, a second lead, and a flexible packaging structure 60.
  • the flexible substrate includes a flexible upper substrate 101 and a flexible lower substrate 102, and the top surface of the flexible upper substrate 101 has a cavity 100.
  • the first lead is used to connect the first metal interconnect 41 to the first electrical pin in the integrated circuit module 30, and the second lead is used to connect the second metal interconnect 42 to the second electrical pin in the integrated circuit module 30 foot.
  • the first lead includes: a first lead upper section 511 located in the flexible upper substrate 101, a first lead lower section 512 located in the flexible lower substrate 102, a position between the flexible upper substrate 101 and the flexible lower substrate 102, and connecting the first A first conductive film 513 of a lead upper section 511 and a first lead lower section 512.
  • the second lead includes: a second lead upper section 521 located in the flexible upper substrate 101, a second lead lower section 522 located in the flexible lower substrate 102, located between the flexible upper substrate 101 and the flexible lower substrate 102 and connected to the first The second conductive film 523 of the upper section 521 of the second lead and the lower section 522 of the second lead.
  • the integrated circuit module 30 is located at the bottom of the flexible lower substrate 102, and the integrated circuit module 30 and the filter module 20 overlap in the vertical direction.
  • the filter module and the integrated circuit module are provided on the same substrate.
  • the filter module and the integrated circuit module are provided on different substrates, the substrate materials may be different, and they may be processed separately to reduce the processing difficulty.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

一种具有集成电路模块和声波滤波器模块的柔性系统,包括柔性衬底(10)、滤波器模块(20)、集成电路模块(30)、第一金属互连(41)、第二金属互连(42)、第一引线(51)、第二引线(52)、柔性封装结构(60),其中:柔性衬底(10)的顶表面具有空腔(100);滤波器模块(20)位于空腔(100)之上,滤波器模块(20)包括输入端口(201)和输出端口(203);第一金属互连(41)与输入端口(201)接触,第二金属互连(42)与输出端口(203)接触;集成电路模块(30)位于柔性衬底(10)外部;第一引线(51)与第二引线(52)位于柔性衬底(10)内部,第一引线(51)用于连接第一金属互连(41)与集成电路模块(30)中的第一电性管脚,第二引线(52)用于连接第二金属互连(42)与集成电路模块(30)中的第二电性管脚;柔性封装结构(60)覆盖滤波器模块(20)、第一金属互连(41)和第二金属互连(42)。

Description

具有集成电路模块和声波滤波器模块的柔性系统 技术领域
本发明涉及半导体技术领域,特别地涉及一种具有集成电路模块和声波滤波器模块的柔性系统。
背景技术
智能手机是电子器件最常见的一种应用场景。智能手机的射频通讯部分既包括声波滤波器模块,又包括集成电路模块。传统的智能手机是基于非柔性的硅基器件制造的。随着可穿戴等消费需求日益强烈,近年来柔性的电子器件代替传统的硬质集成电路是未来电子科技的发展趋势。而集成电路模块与声波滤波器模块的加工技术并不相同,二者不能直接加工在同一衬底上,因此,如何实现包含有集成电路模块和声波滤波器模块互联的柔性系统,成为了现有技术中的难题。
发明内容
有鉴于此,本发明提供一种具有集成电路模块和声波滤波器的柔性系统,有助于实现无线信号发射接收系统柔性化。
本发明提出一种具有集成电路模块和声波滤波器模块的柔性系统,包括柔性衬底、滤波器模块、集成电路模块、第一金属互连、第二金属互连、第一引线、第二引线、柔性封装结构,其中:所述柔性衬底的顶表面具有空腔;所述滤波器模块位于所述空腔之上,所述滤波器模块包括输入端口和输出端口;所述第一金属互连与所述输入端口接触,所述第二金属互连与所述输出端口接触;所述集成电路模块位于所述柔性衬底外部;所述第一引线与第二引线位于所述柔性衬底内部,所述第一引线用于连接所述第一金属互连与所述集成电路模块中的第一电性管脚,所述第二引线用于连接所述第二金属互连与所述集成电 路模块中的第二电性管脚;所述柔性封装结构覆盖所述滤波器模块、所述第一金属互连和所述第二金属互连。
可选地,其中:所述集成电路模块位于所述柔性衬底顶部,所述集成电路模块与所述滤波器模块在垂直方向上无重叠。
可选地,其中:所述集成电路模块位于所述柔性衬底底部,所述集成电路模块与所述滤波器模块在垂直方向上重叠。
可选地,其中:所述柔性衬底包括柔性上衬底和柔性下衬底,所述空腔位于所述柔性上衬底的顶表面;所述第一引线包括:位于所述柔性上衬底中的第一引线上段、位于所述柔性下衬底中的第一引线下段、位于柔性上衬底和柔性下衬底之间并且连接所述第一引线上段和所述第一引线下段的第一导电薄膜;所述第二引线包括:位于所述柔性上衬底中的第二引线上段、位于所述柔性下衬底中的第二引线下段、位于柔性上衬底和柔性下衬底之间并且连接所述第二引线上段和所述第二引线下段的第二导电薄膜。
可选地,其中:所述集成电路模块位于所述柔性下衬底顶部,所述集成电路模块与所述滤波器模块在垂直方向上无重叠。
可选地,其中:所述集成电路模块位于所述柔性下衬底底部,所述集成电路模块与所述滤波器模块在垂直方向上重叠。
可选地,所述输入端口、所述输出端口、所述第一金属互连、所述第二金属互连、所述第一引线、所述第二引线的材料包括:金、钨、钼、铂、钌、铱、锗、铜、钛、钛钨、铝、铬或砷掺杂金。
可选地,所述压电层的材料包括:氮化铝、掺杂氮化铝、氧化锌、锆钛酸铅、铌酸锂、石英、铌酸钾或钽酸锂。其中掺杂氮化铝至少含一种稀土元素
可选地,所述柔性衬底的材料包括:硅、砷化镓、钢、纸、丝绸、塑料、聚酰亚胺、聚对二甲苯、聚碳酸酯、涤纶树脂、聚萘二甲酸乙二醇酯、聚醚砜、聚醚酰亚胺、聚二甲基硅氧烷、聚乙烯醇或含氟聚合物。
可选地,所述柔性封装结构和所述聚合物的材料包括:聚酰亚胺、聚对二甲苯、聚碳酸酯、涤纶树脂、聚萘二甲酸乙二醇酯、聚醚砜、聚醚酰亚胺、聚二甲基硅氧烷、聚乙烯醇或含氟聚合物。
可选地,所述集成电路模块包括如下一种或几种:功率放大器、低噪声放大器、射频天线、射频开关、调制解调器、数模转换器。
附图说明
附图用于更好地理解本发明,不构成对本发明的不当限定。其中:
图1是Ladder结构的滤波器的示意图;
图2是本发明第一实施例的具有集成电路模块和声波滤波器模块的柔性系统的剖面图;
图3是本发明第二实施例的具有集成电路模块和声波滤波器模块的柔性系统的剖面图;
图4是本发明第三实施例的具有集成电路模块和声波滤波器模块的柔性系统的剖面图;
图5是本发明第四实施例的具有集成电路模块和声波滤波器模块的柔性系统的剖面图。
具体实施方式
下面详细描述本发明的实施例,所述实施例的示例在附图中示出,其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的,旨在用于解释本发明,而不能理解为对本发明的限制。
在本发明的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。
此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。
在本发明中,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本发明中的具体含义。
在本发明中,除非另有明确的规定和限定,第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触,也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且,第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方,或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方,或仅仅表示第一特征水平高度小于第二特征。
本发明实施例的具有集成电路模块和声波滤波器模块的柔性系统,可以包括:柔性衬底、滤波器模块、集成电路模块、第一金属互连、第二金属互连、第一引线、第二引线、柔性封装结构。其中:柔性衬底的顶表面具有空腔。滤波器模块位于空腔之上,滤波器模块包括输入端口和输出端口。第一金属互连与输入端口接触,第二金属互连与输出端口接触。集成电路模块位于柔性衬底外部。第一引线与第二引线位于柔性衬底内部,第一引线用于连接第一金属互连与集成电路模块中的第一电性管脚,第二引线用于连接第二金属互连与集成电路模块中的第二电性管脚。柔性封装结构覆盖滤波器模块、第一金属互连和第二金属互连。
由上可知,本发明实施例的具有集成电路模块和柔性滤波器的系统中,滤波器模块被包埋在柔性封装结构中,集成电路模块集成在柔性衬底之上,由于位于下方的衬底以及位于上方的封装结构都是柔性结构,所以整个系统具有柔韧性佳的优点。
需要说明的是,输入端口、输出端口、第一金属层、第二金属层、第一金属互连、第二金属互连的材料包括:金(Au)、钨(W)、钼(Mo)、铂(Pt),钌(Ru)、铱(Ir)、锗(Ge)、铜(Cu)、钛钨(TiW)、铝(Al)、铬(Cr)、砷掺杂金等类似金属。
压电层的材料可以为氮化铝(AlN)、掺杂氮化铝(doped AlN)、氧化锌(ZnO)、锆钛酸铅(PZT)、铌酸锂(LiNbO 3)、石英(Quartz)、铌酸钾(KNbO 3)或钽酸锂(LiTaO 3)等材料,上述材料为压电薄膜,厚度小于10微米。氮化铝薄膜为多晶形态或者单晶形态,生长方式为薄膜溅射(sputtering)或者有机金属化学气相沉积法(MOCVD)。
其中掺杂AlN至少含一种稀土元素,如钪(Sc)、钇(Y)、镧(La)、铒(Er)、镱(Yb)。
柔性衬底的材料可以为超薄的硅、砷化镓、超薄的钢片、纸、丝绸、塑料、聚酰亚胺(PI)、聚对二甲苯(Parylene)、聚碳酸酯(PC)、涤纶树脂(PET)、聚萘二甲酸乙二醇酯(PEN)、聚醚砜(PES)、聚醚酰亚胺(PEI)、聚二甲基硅氧烷(PDMS)、聚乙烯醇(PVA)、和各种含氟聚合物(FEP)等。
柔性封装以及聚合物的材料可以是聚酰亚胺(PI)、聚对二甲苯(Parylene)、聚碳酸酯(PC)、涤纶树脂(PET)、聚萘二甲酸乙二醇酯(PEN)、聚醚砜(PES)、聚醚酰亚胺(PEI)、聚二甲基硅氧烷(PDMS)、聚乙烯醇(PVA)、和各种含氟聚合物(FEP)。
需要说明的是:集成电路模块可以包括:功率放大器、低噪声放大器、射频天线、射频开关、调制解调器、数模转换器等无线收发电子系统中用到的电子元件。
为使本领域技术人员更好地理解,下面结合说明书附图详细举例说明。需要说明的是,按照一定的拓扑结构连接薄膜体声波谐振器可以构建滤波器件,其中最常见的组成滤波器的谐振器连接拓扑结构为Ladder结构,如图1所示,滤波器的输入输出端口位于不同的谐振器上,可以从对应谐振器的底电极引出,也可从顶电极引出。下文中滤波器模块中仅画出单个谐振器代表整个滤波器,谐振器包括从下到上依次排列的底电极、压电层和顶电极。在本文实施例中,以底电极作为输入端口,以顶电极作为输出端口,但本发明的应用并不限于此。另外,滤波器模块还具有接地端口。
实施例1
图2是本发明第一实施例的具有集成电路模块和声波滤波器的柔性系统的剖面图。在这一实施例中,集成电路模块被并列放置在柔性声波滤波器的衬底之上,并通过衬底中预加工好的引线实现互联。如 图2所示,该系统主要包括:柔性衬底10、滤波器模块20、集成电路模块30、第一金属互连41、第二金属互连42、第一引线51、第二引线52、柔性封装结构60。柔性衬底10的顶表面具有空腔100。滤波器模块20位于空腔100之上,滤波器模块20包括从下到上依次排列的输入端口201、压电层202、输出端口203。第一金属互连41与输入端口201接触,第二金属互连42与输出端口203接触。集成电路模块30位于柔性衬底10外部。第一引线51与第二引线52位于柔性衬底10内部,第一引线51用于连接第一金属互连41与集成电路模块30中的第一电性管脚,第二引线52用于连接第二金属互连42与集成电路模块30中的第二电性管脚。柔性封装结构60覆盖滤波器模块20、第一金属互连41和第二金属互连42。集成电路模块30位于柔性衬底10顶部,集成电路模块30与滤波器模块20在垂直方向上不重叠。
实施例2
图3是本发明第二实施例的具有集成电路模块和声波滤波器的柔性系统的剖面图。在这一实施例中,集成电路模块被放置在柔性声波滤波器的衬底之下,并通过衬底中预加工好的引线实现互联,相比实施例1更节省空间。如图3所示,该系统主要包括:柔性衬底10、滤波器模块20、集成电路模块30、第一金属互连41、第二金属互连42、第一引线51、第二引线52、柔性封装结构60。柔性衬底10的顶表面具有空腔100。滤波器模块20位于空腔100之上,滤波器模块20包括从下到上依次排列的输入端口201、压电层202、输出端口203。第一金属互连41与输入端口201接触,第二金属互连42与输出端口203接触。集成电路模块30位于柔性衬底10外部。第一引线51与第二引线52位于柔性衬底10内部,第一引线51用于连接第一金属互连41与集成电路模块30中的第一电性管脚,第二引线52用于连接第二金属互连42与集成电路模块30中的第二电性管脚。柔性封装结构60覆盖滤波器模块20、第一金属互连41和第二金属互连42。集成电路模块30位于柔性衬底10底部,集成电路模块30与滤波器模块20在垂直方向上重叠。
实施例3
图4是本发明第三实施例的具有集成电路模块和声波滤波器的柔性系统的剖面图。如图4所示,该系统主要包括:柔性衬底、滤波器模块20、集成电路模块30、第一金属互连41、第二金属互连42、第一引线、第二引线、柔性封装结构60。其中:柔性衬底包括柔性上衬底101和柔性下衬底102,柔性上衬底101的顶表面具有空腔100。第一引线用于连接第一金属互连41与集成电路模块30中的第一电性管脚,第二引线用于连接第二金属互连42与集成电路模块30中的第二电性管脚。第一引线包括:位于柔性上衬底101中的第一引线上段511、位于柔性下衬底102中的第一引线下段512、位于柔性上衬底101和柔性下衬底102之间并且连接第一引线上段511和第一引线下段512的第一导电薄膜513。第二引线包括:位于柔性上衬底101中的第二引线上段521、位于柔性下衬底102中的第二引线下段522、位于柔性上衬底101和柔性下衬底102之间并且连接第二引线上段521和第二引线下段522的第二导电薄膜523。集成电路模块30位于柔性下衬底102顶部,集成电路模块30与滤波器模块20在垂直方向上无重叠。
实施例4
图5是本发明第四实施例的具有集成电路模块和声波滤波器的柔性系统的剖面图。如图5所示,该系统主要包括:柔性衬底、滤波器模块20、集成电路模块30、第一金属互连41、第二金属互连42、第一引线、第二引线、柔性封装结构60。其中:柔性衬底包括柔性上衬底101和柔性下衬底102,柔性上衬底101的顶表面具有空腔100。第一引线用于连接第一金属互连41与集成电路模块30中的第一电性管脚,第二引线用于连接第二金属互连42与集成电路模块30中的第二电性管脚。第一引线包括:位于柔性上衬底101中的第一引线上段511、位于柔性下衬底102中的第一引线下段512、位于柔性上衬底101和柔性下衬底102之间并且连接第一引线上段511和第一引线下段512的第一导电薄膜513。第二引线包括:位于柔性上衬底101中的第二引线上段521、位于柔性下衬底102中的第二引线下段522、位于柔性上衬 底101和柔性下衬底102之间并且连接第二引线上段521和第二引线下段522的第二导电薄膜523。集成电路模块30位于柔性下衬底102底部,集成电路模块30与滤波器模块20在垂直方向上重叠。
上述实施例中,实施例1和实施例2中,滤波器模块和集成电路模块是设在同一衬底上。实施例3和实施例4中,滤波器模块和集成电路模块是设在不同的衬底上,衬底材料可以不同,可以分别加工,降低加工难度。
上述具体实施方式,并不构成对本发明保护范围的限制。本领域技术人员应该明白的是,取决于设计要求和其他因素,可以发生各种各样的修改、组合、子组合和替代。任何在本发明的精神和原则之内所作的修改、等同替换和改进等,均应包含在本发明保护范围之内。

Claims (11)

  1. 一种具有集成电路模块和声波滤波器模块的柔性系统,其特征在于,包括柔性衬底、滤波器模块、集成电路模块、第一金属互连、第二金属互连、第一引线、第二引线、柔性封装结构,其中:
    所述柔性衬底的顶表面具有空腔;
    所述滤波器模块位于所述空腔之上,所述滤波器模块包括输入端口和输出端口;
    所述第一金属互连与所述输入端口接触,所述第二金属互连与所述输出端口接触;
    所述集成电路模块位于所述柔性衬底外部;
    所述第一引线与第二引线位于所述柔性衬底内部,所述第一引线用于连接所述第一金属互连与所述集成电路模块中的第一电性管脚,所述第二引线用于连接所述第二金属互连与所述集成电路模块中的第二电性管脚;
    所述柔性封装结构覆盖所述滤波器模块、所述第一金属互连和所述第二金属互连。
  2. 根据权利要求1所述的具有集成电路模块和声波滤波器模块的柔性系统,其特征在于,其中:
    所述集成电路模块位于所述柔性衬底顶部,所述集成电路模块与所述滤波器模块在垂直方向上无重叠。
  3. 根据权利要求1所述的具有集成电路模块和声波滤波器模块的柔性系统,其特征在于,其中:
    所述集成电路模块位于所述柔性衬底底部,所述集成电路模块与所述滤波器模块在垂直方向上重叠。
  4. 根据权利要求1所述的具有集成电路模块和声波滤波器模块的柔性系统,其特征在于,其中:
    所述柔性衬底包括柔性上衬底和柔性下衬底,所述空腔位于所述 柔性上衬底的顶表面;
    所述第一引线包括:位于所述柔性上衬底中的第一引线上段、位于所述柔性下衬底中的第一引线下段、位于柔性上衬底和柔性下衬底之间并且连接所述第一引线上段和所述第一引线下段的第一导电薄膜;
    所述第二引线包括:位于所述柔性上衬底中的第二引线上段、位于所述柔性下衬底中的第二引线下段、位于柔性上衬底和柔性下衬底之间并且连接所述第二引线上段和所述第二引线下段的第二导电薄膜。
  5. 根据权利要求4所述的具有集成电路模块和声波滤波器模块的柔性系统,其特征在于,其中:
    所述集成电路模块位于所述柔性下衬底顶部,所述集成电路模块与所述滤波器模块在垂直方向上无重叠。
  6. 根据权利要求4所述的具有集成电路模块和声波滤波器模块的柔性系统,其特征在于,其中:
    所述集成电路模块位于所述柔性下衬底底部,所述集成电路模块与所述滤波器模块在垂直方向上重叠。
  7. 根据权利要求1至6任一项所述的具有集成电路模块和声波滤波器模块的柔性系统,其特征在于,所述输入端口、所述输出端口、所述第一金属互连、所述第二金属互连、所述第一引线、所述第二引线的材料包括:金、钨、钼、铂、钌、铱、锗、铜、钛、钛钨、铝、铬或砷掺杂金。
  8. 根据权利要求1至6任一项所述的具有集成电路模块和声波滤波器模块的柔性系统,其特征在于,所述压电层的材料包括:氮化铝、掺杂氮化铝、氧化锌、锆钛酸铅、铌酸锂、石英、铌酸钾或钽酸锂。其中掺杂氮化铝至少含一种稀土元素。
  9. 根据权利要求1至6任一项所述的具有集成电路模块和声波滤波器模块的柔性系统,其特征在于,所述柔性衬底的材料包括:硅、 砷化镓、钢、纸、丝绸、塑料、聚酰亚胺、聚对二甲苯、聚碳酸酯、涤纶树脂、聚萘二甲酸乙二醇酯、聚醚砜、聚醚酰亚胺、聚二甲基硅氧烷、聚乙烯醇或含氟聚合物。
  10. 根据权利要求1至6任一项所述的具有集成电路模块和声波滤波器模块的柔性系统,其特征在于,所述柔性封装结构和所述聚合物的材料包括:聚酰亚胺、聚对二甲苯、聚碳酸酯、涤纶树脂、聚萘二甲酸乙二醇酯、聚醚砜、聚醚酰亚胺、聚二甲基硅氧烷、聚乙烯醇或含氟聚合物。
  11. 根据权利要求1至6任一项所述的具有集成电路模块和声波滤波器模块的柔性系统,其特征在于,所述集成电路模块包括如下一种或几种:功率放大器、低噪声放大器、射频天线、射频开关、调制解调器、数模转换器。
PCT/CN2018/124076 2018-12-26 2018-12-26 具有集成电路模块和声波滤波器模块的柔性系统 WO2020132995A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/124076 WO2020132995A1 (zh) 2018-12-26 2018-12-26 具有集成电路模块和声波滤波器模块的柔性系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/124076 WO2020132995A1 (zh) 2018-12-26 2018-12-26 具有集成电路模块和声波滤波器模块的柔性系统

Publications (1)

Publication Number Publication Date
WO2020132995A1 true WO2020132995A1 (zh) 2020-07-02

Family

ID=71127513

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/124076 WO2020132995A1 (zh) 2018-12-26 2018-12-26 具有集成电路模块和声波滤波器模块的柔性系统

Country Status (1)

Country Link
WO (1) WO2020132995A1 (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101657896A (zh) * 2008-02-03 2010-02-24 香港应用科技研究院有限公司 电子电路封装
CN102420582A (zh) * 2011-11-29 2012-04-18 浙江大学 基于柔性衬底的声表面波器件的结构及其制造方法
CN204792771U (zh) * 2015-07-31 2015-11-18 中国电子科技集团公司第二十六研究所 异构集成无源射频滤波器的射频前端模拟集成芯片
CN105070699A (zh) * 2015-07-31 2015-11-18 中国电子科技集团公司第二十六研究所 一种异构集成无源射频滤波器的射频前端模拟集成芯片
US20170231098A1 (en) * 2016-02-09 2017-08-10 At&S Austria Technologie & Systemtechnik Aktiengesellschaft Methods of Manufacturing Flexible Electronic Devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101657896A (zh) * 2008-02-03 2010-02-24 香港应用科技研究院有限公司 电子电路封装
CN102420582A (zh) * 2011-11-29 2012-04-18 浙江大学 基于柔性衬底的声表面波器件的结构及其制造方法
CN204792771U (zh) * 2015-07-31 2015-11-18 中国电子科技集团公司第二十六研究所 异构集成无源射频滤波器的射频前端模拟集成芯片
CN105070699A (zh) * 2015-07-31 2015-11-18 中国电子科技集团公司第二十六研究所 一种异构集成无源射频滤波器的射频前端模拟集成芯片
US20170231098A1 (en) * 2016-02-09 2017-08-10 At&S Austria Technologie & Systemtechnik Aktiengesellschaft Methods of Manufacturing Flexible Electronic Devices

Similar Documents

Publication Publication Date Title
CN1503451B (zh) 滤波器元件以及包含它的滤波器器件、双工器和高频电路
US8441102B2 (en) Semiconductor device having a capacitor
KR101893236B1 (ko) 반도체 장치 및 그 제조 방법과 휴대 전화기
CN205195673U (zh) 晶圆级封装装置
US6741145B2 (en) Filter structure and arrangement comprising piezoelectric resonators
JP2004007847A (ja) 薄膜バルク波共振子フィルタ
CN112039465A (zh) 一种薄膜体声波谐振器及其制造方法
US9331667B2 (en) Methods, systems, and apparatuses for temperature compensated surface acoustic wave device
CN112039466A (zh) 一种薄膜体声波谐振器及其制造方法
JP2007221189A (ja) 薄膜圧電共振器及び薄膜圧電共振器フィルタ
US9947628B2 (en) High frequency semiconductor amplifier
JP4671600B2 (ja) 半導体装置の作製方法
CN110676287A (zh) 单片集成射频器件、制备方法以及集成电路系统
CN114465599A (zh) 集成芯片及其制备方法
WO2020132995A1 (zh) 具有集成电路模块和声波滤波器模块的柔性系统
CN210467842U (zh) 单片集成的射频器件及集成电路系统
CN109830476B (zh) 一种包括集成电路模块的柔性滤波器系统
CN109889182B (zh) 一种柔性体声波滤波器
CN109904148B (zh) 具有集成电路模块和声波滤波器模块的柔性系统
CN108023564A (zh) 包括体声波谐振器的滤波器及其制造方法
US20230216478A1 (en) Bulk acoustic wave resonator with integrated capacitor
WO2020132994A1 (zh) 一种包括集成电路模块的柔性滤波器系统
WO2020098484A1 (zh) 带断裂结构体声波谐振器及其制造方法、滤波器和电子设备
US20220094326A1 (en) Piezoelectric element, method of manufacturing the same, surface acoustic wave element, and piezoelectric thin film resonance element
CN113258900B (zh) 一种体声波谐振器组件、制备方法以及通信器件

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18944379

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18944379

Country of ref document: EP

Kind code of ref document: A1