WO2020132801A1 - 电子器件及其制作方法 - Google Patents

电子器件及其制作方法 Download PDF

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Publication number
WO2020132801A1
WO2020132801A1 PCT/CN2018/123097 CN2018123097W WO2020132801A1 WO 2020132801 A1 WO2020132801 A1 WO 2020132801A1 CN 2018123097 W CN2018123097 W CN 2018123097W WO 2020132801 A1 WO2020132801 A1 WO 2020132801A1
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WIPO (PCT)
Prior art keywords
elastic layer
electronic device
rigid substrate
functional units
laser
Prior art date
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Ceased
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PCT/CN2018/123097
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English (en)
French (fr)
Inventor
袁泽
康佳昊
魏鹏
管曦萌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Royole Technologies Co Ltd
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Shenzhen Royole Technologies Co Ltd
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Priority to PCT/CN2018/123097 priority Critical patent/WO2020132801A1/zh
Priority to CN201880097629.9A priority patent/CN113169076A/zh
Publication of WO2020132801A1 publication Critical patent/WO2020132801A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes

Definitions

  • the invention relates to the field of electronic technology, in particular to an electronic device and a manufacturing method thereof.
  • the manufacturing method of the existing electronic device is to form a patterned wire on an elastic substrate, and then fix the chip on the substrate by transferring a stamp to connect with the wire.
  • this manufacturing method is incompatible with existing manufacturing technologies such as semiconductors and display panels, resulting in low production efficiency.
  • the present invention provides an electronic device with high production efficiency and a manufacturing method thereof.
  • the present invention provides a method for manufacturing an electronic device, which includes the following steps:
  • An electronic device to be peeled is provided on the rigid substrate, the electronic device includes a plurality of functional units arranged at intervals and an elastic layer covering the plurality of functional units;
  • a mold release process is performed to separate several functional units from the rigid substrate together with the elastic layer.
  • the present invention provides an electronic device manufactured by the above-described method of manufacturing an electronic device.
  • the electronic device includes a plurality of functional units arranged at intervals and an elastic layer covering the functional units.
  • an electronic device to be peeled is provided on the rigid substrate, the electronic device includes a plurality of functional units arranged at intervals and an elastic layer covering the functional units; Processing to separate several functional units from the rigid substrate together with the elastic layer. Since the electronic device of the present invention is compatible with existing semiconductor, display panel and other manufacturing technologies, the production efficiency is improved.
  • FIG. 1 is a flowchart of a method for manufacturing an electronic device provided by the first embodiment of the present invention.
  • FIG. 2 is a schematic diagram of the manufacturing process of the electronic device provided by the first embodiment of the present invention.
  • FIG. 3 is a flowchart of a method for manufacturing an electronic device provided by a second embodiment of the present invention.
  • FIG. 4 is a schematic diagram of the manufacturing process of the electronic device provided by the second embodiment of the present invention.
  • FIG. 5 is a flowchart of a method for manufacturing an electronic device provided by a third embodiment of the present invention.
  • FIG. 6 is a schematic diagram of the manufacturing process of the electronic device provided by the third embodiment of the present invention.
  • FIG. 7 is a flowchart of a method for manufacturing an electronic device provided by a fourth embodiment of the present invention.
  • FIG. 8 is a schematic diagram of the manufacturing process of the electronic device provided by the fourth embodiment of the present invention.
  • FIG. 9 is a flowchart of a method for manufacturing an electronic device provided by a fifth embodiment of the present invention.
  • FIG. 10 is a schematic diagram of the manufacturing process of the electronic device provided by the fifth embodiment of the present invention.
  • FIG. 1 is a flowchart of a method for manufacturing an electronic device according to an embodiment of the present invention.
  • FIG. 2 is a process for manufacturing an electronic device according to an embodiment of the present invention. Schematic diagram of the process.
  • the manufacturing method of the electronic device 1 includes the following steps.
  • step S101 a rigid substrate is provided.
  • the rigid substrate 10 may be, but not limited to, a glass substrate, a metal substrate, or a ceramic substrate.
  • the rigid substrate 10 is a thin glass substrate, so as to facilitate the rapid separation of the electronic device 1 from the rigid substrate 10 after fabrication.
  • the glass substrate is, for example, but not limited to soda lime glass, alkali-free glass, phosphate-based glass, or quartz.
  • the rigid substrate 10 is used to support the electronic device 1 during the manufacturing process of the electronic device 1.
  • the rigid substrate 10 is made of a transparent material, so that the laser can irradiate the electronic device 1 through the rigid substrate 10, so that the electronic device 1 is peeled off from the rigid substrate 10.
  • step S103 an electronic device to be peeled is provided on the rigid substrate.
  • the electronic device 1 includes a plurality of functional units 20 arranged at intervals and an elastic layer 30 covering the functional units 20.
  • the functional unit 20 is, for example, but not limited to, a flexible display unit, a microchip, a touch sensor, and other functional elements.
  • each of the functional units 20 includes a base 21 and a functional device 22, and a space 201 is formed between two adjacent bases 21 and the rigid substrate 10.
  • the substrate 21 and the functional device 22 are stacked.
  • each functional unit 20 includes only the functional device 22, that is, the substrate 21 may be omitted.
  • setting the electronic device 1 to be peeled off on the rigid substrate 10 specifically includes:
  • the elastic layer 30 is covered on the side of the functional unit 20 facing away from the rigid substrate 10 to manufacture the electronic device 1 to be peeled off.
  • the arrangement of a number of functional units 20 arranged at intervals on the rigid substrate 10 specifically includes:
  • a plurality of spaced-apart bases 21 and functional devices 22 are sequentially arranged on the rigid substrate 10 to obtain a plurality of the functional units 20;
  • a base layer (not shown) and a number of functional devices 22 arranged at intervals are sequentially arranged on the rigid substrate 10;
  • the base layer is patterned to produce several functional units 20.
  • the existing patterning process may be used to pattern the base layer.
  • the base layer is lithographically and etched using a plurality of the functional devices 22 as a mask or a separate mask that is stacked on the functional device 22.
  • a layer of photoresist is coated on several of the functional devices 22. In this way, the action light is projected on the reticle, and the photoresist is exposed, developed, etc., so that the substrate layers exposed on the opposite sides of the photoresist are etched to obtain the substrates arranged at intervals 21, that is, a plurality of the functional units 20 arranged at intervals on the rigid substrate 10.
  • the substrate 21 is made of transparent material.
  • the substrate 21 may be a flexible substrate or a rigid substrate.
  • the substrate 21 is, for example, but not limited to, a polyimide (PI) substrate, a colorless transparent polyimide (CPI) substrate, and polyethylene terephthalate (PET) Substrate, polyamide (PA) substrate, polycarbonate (PC) substrate, polyethersulfone (PES) substrate, polyethylene naphthalate (PEN) substrate, polyethylene One of polymethylmethacrylate (PMMA) substrate, cycloolefin copolymer (COC) substrate, cycloolefin polymer (COP) substrate, glass substrate and silicon substrate.
  • PI polyimide
  • CPI colorless transparent polyimide
  • PET polyethylene terephthalate
  • PA polyamide
  • PC polycarbonate
  • PES polyethersulfone
  • PEN polyethylene naphthalate
  • PMMA polymethylmethacrylate
  • COC cycloolefin
  • the functional device 22 includes, but is not limited to a microchip and a communication bus.
  • the microchip is an electronic device with a specific function.
  • the microchip is, for example, but not limited to an electronic device having a processing function, a storage function, a calculation function, a display function, a sensing function, or a communication function.
  • the microchips include but are not limited to: circuits directly fabricated on the substrate 21, packaged microchips transferred onto the substrate 21, and unpackaged microchips transferred onto the substrate 21.
  • the communication bus is used to realize the communication connection between these electronic devices.
  • the electronic device 1 is a display panel.
  • the display panel is, for example, but not limited to, a liquid crystal display (Liquid Crystal Display, LCD) panel, a quantum dot display (Quantum Dot Light Emitting Diodes, QLED) panel, an electronic paper (E-paper Display, EPD), and a touch screen (Touch panel), flexible solar cell (Page, View, PV) panel, radio frequency tag (Radio Frequency Identification, RFID) and other products or components with specific functions.
  • LCD liquid crystal display
  • QLED Quantum Dot Light Emitting Diodes
  • EPD electronic paper
  • Touch panel touch screen
  • flexible solar cell (Page, View, PV) panel radio frequency tag (Radio Frequency Identification, RFID) and other products or components with specific functions.
  • the elastic coefficient of the substrate 21 is lower than that of the elastic layer 30, so that when the electronic device 1 is in a deformed state, such as stretching or bending, the substrate 21 can be used to support and protect the functional device 22. Since the elastic layer 30 fills the space 201 between the substrate 21 and covers the substrate 21 and the functional device 22, the deformation of the electronic device 1 is more flexible, and the electronic device 1 is protected. It can be understood that the width of the space 201 can be designed according to the size required for the patterning process of the functional device 22 and the density of the functional device 22.
  • the elastic layer 30 contains an elastomer.
  • the elastomer is preferably a material whose internal polymer chain or lattice structure can be stretched under the action of external force.
  • the elastomer is, for example, but not limited to one of natural rubber, synthetic rubber, thermoplastic elastomer, or a combination thereof.
  • the natural rubber is, for example, polyisoprene.
  • the synthetic rubber includes, but is not limited to styrene-butadiene rubber, butadiene rubber, neoprene rubber, nitrile rubber, butyl rubber, or silicone rubber.
  • the silica gel is, for example, polydimethylsiloxane (PDMS).
  • thermoplastic elastomer includes, but is not limited to, styrene block copolymer, thermoplastic olefin, thermoplastic vulcanizate, thermoplastic polyurethane, thermoplastic copolyester, or thermoplastic polyamide.
  • the elastic layer is further doped with a laser absorber.
  • the laser absorber is, for example, but not limited to one of salicylates, benzophenones, benzotriazoles, substituted acrylonitriles, triazines, or a combination thereof.
  • the side of the functional unit 20 facing away from the rigid substrate 10 is covered with an elastic layer 30 to manufacture the electronic device 1 to be peeled off, which specifically includes:
  • the side of the functional unit 20 facing away from the rigid substrate 10 is covered with an elastic layer 30 to manufacture the electronic device 1 to be peeled off, which specifically includes:
  • the solid-state elastic layer 30 containing an elastomer and a laser absorber is prepared in advance;
  • the elastic layer 30 and the rigid substrate 10 and the functional unit 20 are laminated, pressurized/heated and bonded, so that the elastic layer 30 is attached to the rigid substrate 10 and covered
  • the substrate 21 and the functional device 22 are used to manufacture the electronic device 1 to be stripped.
  • the side of the functional unit 20 facing away from the rigid substrate 10 is covered with an elastic layer 30 to manufacture the electronic device 1 to be peeled off, which specifically includes:
  • An elastic layer 30 including an elastomer and a laser absorber is deposited on the rigid substrate 10 and the plurality of functional units 20, so that the elastic layer 30 is formed on the rigid substrate 10 and covers the The substrate 21 and the functional device 22 to manufacture the electronic device 1 to be peeled off.
  • the deposition process includes, but is not limited to, chemical vapor deposition, pulsed laser deposition, and atomic layer deposition.
  • step S105 a release process is performed to separate several functional units from the rigid substrate together with the elastic layer.
  • a mold release process is performed to separate several functional units 20 and the elastic layer 30 from the rigid substrate 10, specifically including:
  • Laser ablation of the elastic layer 30 and the base 21 is used to separate several functional units 20 from the rigid substrate 10 together with the elastic layer 30.
  • the electronic device 1 is separated from the rigid substrate 10, and the back surface of the rigid substrate 10 can be irradiated with laser scanning.
  • the rigid substrate 10 has light permeability, laser light is irradiated on the base 21 and the elastic layer 30 between the rigid substrate 10 and the electronic device 1.
  • the elastic layer 30 is doped with a laser absorber, the elastic layer 30 can absorb laser light of a specific wavelength, so the absorption rate of the laser by the elastic layer 30 is greatly improved to separate the elastic layer 30 from the rigid substrate 10.
  • the laser can be scanned from one end of the rigid substrate 10 to the other end, so that the rigid substrate 10 is detached from the base 21 and the elastic layer 30 and peeled off.
  • the laser may be a gas laser or a solid-state laser.
  • the solid-state laser is, for example, a semiconductor laser.
  • the gas laser is, for example, but not limited to, excimer laser, Nd-YAG laser, Ar laser, CO 2 laser, He-Ne laser, or the like.
  • the laser absorption rate of the substrate 21 is substantially the same as the laser absorption rate of the elastic layer 30.
  • the substrate 21 and the elastic layer 30 are simultaneously ablated by a laser, and the ablated substrate 21 and the elastic layer 30 are located on the same plane on the side near the ablated surface Therefore, the ablated substrate 21 and the elastic layer 30 together constitute the electronic device 1.
  • the thickness of the substrate 21 and the thickness of the elastic layer 30 are both greater than the depth of laser ablation.
  • FIG. 3 shows a flowchart of a method for manufacturing an electronic device according to a second embodiment of the present invention
  • FIG. 4 shows a method for manufacturing an electronic device according to a second embodiment of the present invention.
  • the manufacturing method of the electronic device 1 includes the following steps.
  • Step S301 providing a rigid substrate.
  • Step S303 a plurality of functional units arranged at intervals are arranged on the rigid substrate.
  • Step S305 a first elastic layer is formed on the rigid substrate, and the first elastic layer is wrapped around the functional units.
  • the elastic layer 30 includes the first elastic layer 31.
  • the first elastic layer 31 contains the elastic body and the laser absorber, so that the first elastic layer 31 can absorb laser light of a specific wavelength.
  • the method for forming the first elastic layer 31 on the rigid substrate 10 includes coating, stacking, and deposition processes. For details, refer to the method for forming the elastic layer 30 in the first embodiment, and details are not described herein. .
  • Step S307 forming a second elastic layer on the first elastic layer.
  • the elastic layer 30 further includes a second elastic layer 32.
  • the second elastic layer 32 contains the elastic body. It can be understood that the method for forming the second elastic layer 32 on the first elastic layer 31 includes coating, laminating, and deposition processes. For details, refer to the method for forming the elastic layer 30 in the first embodiment. No longer. The difference is that the second elastic layer 32 is not doped with a laser absorber.
  • the laser absorption rate of the second elastic layer 32 is smaller than the laser absorption rate of the first elastic layer 31. It can be understood that the laser absorption rate of the first elastic layer 31 is substantially the same as the laser absorption rate of the substrate 21, and the laser absorption rate of the second elastic layer 32 is smaller than the laser absorption rate of the substrate 21. In this way, when the laser scanning irradiates the elastic layer 30, the first elastic layer 31 and the substrate 21 are simultaneously laser ablated by a thin layer, so that the ablated first elastic layer 31 and the second elastic layer covering the substrate 21
  • the layer 32 and the functional unit 20 together constitute the electronic device 1.
  • the thickness of the first elastic layer 31 is less than or equal to the depth of laser ablation, and the thickness of the first elastic layer 31 is less than the thickness of the substrate 21.
  • Step S309 a release process is performed to separate the functional unit from the rigid substrate together with the first elastic layer and the second elastic layer covering the functional unit.
  • a release process is performed to separate the functional unit 20 from the rigid substrate 10 together with the first elastic layer 31 and the second elastic layer 32 covering the functional unit 20. This includes:
  • FIG. 5 shows a flowchart of a method for manufacturing an electronic device according to a third embodiment of the present invention.
  • FIG. 6 shows a method for manufacturing an electronic device according to a third embodiment of the present invention. Schematic diagram of the manufacturing process of the device.
  • the manufacturing method of the electronic device 1 includes the following steps.
  • Step S501 providing a rigid substrate.
  • Step S503 a plurality of functional units arranged at intervals are arranged on the rigid substrate.
  • Step S505 a sacrificial layer is formed on the rigid substrate, and the sacrificial layer is coated on the functional units.
  • the method of forming the sacrificial layer 40 on the rigid substrate 10 includes coating, stacking, and deposition processes.
  • the sacrificial layer 40 contains a laser absorbing material so that the sacrificial layer 40 can absorb laser light of a specific wavelength.
  • the formation of the sacrificial layer 40 on the rigid substrate 10 may also be a lamination of the sacrificial layer 40 on the rigid substrate 10.
  • the sacrificial layer 40 is made of transparent material.
  • the sacrificial layer 40 is, for example, but not limited to PI substrate, CPI substrate, PE substrate, PA substrate, PC substrate, PES substrate, PEN substrate, PMMA substrate, COC substrate, COP substrate, indium tin oxide (ITO) , Metal and other inorganic materials.
  • the materials of the sacrificial layer 40 and the substrate 21 are the same, and both are PI substrates.
  • Step S507 forming an elastic layer on the sacrificial layer.
  • the sacrificial layer 40 is disposed between the rigid substrate 10 and the elastic layer 33. It can be understood that the method for forming the elastic layer 33 on the sacrificial layer 40 includes coating, stacking, and deposition processes.
  • the elastic layer 33 is not doped with a laser absorber, and the elastic body in the elastic layer 33 may be selected from materials with a low adhesion coefficient.
  • the laser absorption rate of the elastic layer 33 is smaller than the laser absorption rate of the sacrificial layer 40. It can be understood that the laser absorption rate of the sacrificial layer 40 is substantially the same as the laser absorption rate of the substrate 21, and the laser absorption rate of the elastic layer 33 is smaller than the laser absorption rate of the substrate 21.
  • the sacrificial layer 40 when the sacrificial layer 40 is irradiated by laser scanning, the sacrificial layer 40 and the substrate 21 are simultaneously ablated by a laser, so that the ablated sacrificial layer 40, the elastic layer 33 and the functional unit 20 together constitute the electronic device 1.
  • the thickness of the sacrificial layer 40 is less than or equal to the depth of laser ablation, and the thickness of the sacrificial layer 40 is less than the thickness of the substrate 21.
  • step S509 a release process is performed to separate the functional unit from the rigid substrate together with the sacrificial layer and the elastic layer covering the functional unit.
  • a release process is performed to separate the functional unit 20 from the rigid substrate 10 together with the sacrificial layer 40 and the elastic layer 33 covering the functional unit 20, specifically including:
  • the sacrificial layer 40 and the substrate 21 are ablated by laser to separate the functional unit 20 from the rigid substrate 10 together with the sacrificial layer 40 and the elastic layer 33 covering the functional unit 20.
  • FIG. 7 shows a flowchart of a method for manufacturing an electronic device according to a fourth embodiment of the present invention.
  • FIG. 8 shows a method for manufacturing an electronic device according to a fourth embodiment of the present invention. Schematic diagram of the manufacturing process of the device.
  • the manufacturing method of the electronic device 1 includes the following steps.
  • step S701 a rigid substrate is provided.
  • Step S703 a sacrificial layer is formed on the rigid substrate.
  • the method for forming the sacrificial layer 41 on the rigid substrate 10 includes coating, stacking, and deposition processes.
  • the sacrificial layer 41 includes a laser absorbing material, and the material selection of the sacrificial layer 41 can refer to the sacrificial layer 40 described in the third embodiment.
  • the sacrificial layer 41 and the rigid substrate 10 are stacked.
  • Step S705 forming several functional units arranged at intervals on the sacrificial layer.
  • forming the functional units 20 arranged on the sacrificial layer 41 at intervals includes:
  • a plurality of spaced-apart substrates 21 and functional devices 22 are sequentially arranged on the sacrificial layer 41 to obtain a plurality of functional units 20; or
  • a base layer and a plurality of functional devices 32 arranged at intervals are sequentially formed on the sacrificial layer 41;
  • the base layer is patterned to produce several functional units 20.
  • a plurality of the substrates 21 are arranged on the sacrificial layer 41 at intervals, and a functional device 22 is provided on each side of the substrate 21 away from the sacrificial layer 41, so that the sacrificial layer 41 ⁇ 20 ⁇
  • the function unit 20 is formed.
  • the substrate 21 and the functional device 22 are stacked.
  • the functional unit 20 only includes several functional devices 22 arranged at intervals, that is, the substrate 21 may be omitted.
  • the sacrificial layer 41 and the base 21 are sequentially formed on the rigid substrate 10 through different processes.
  • the sacrificial layer 41 and the substrate 21 may be integrally formed. That is, the base 21 is formed on the rigid substrate 10, and the base 21 is patterned to form the base 21 and the sacrificial layer 41 having different thicknesses. The thickness of the substrate 21 is greater than the thickness of the sacrificial layer 41.
  • Step S707 an elastic layer is formed on the sacrificial layer, and the elastic layer is wrapped around the several functional units.
  • the elastic layer 33 is not doped with a laser absorber, and the elastic body in the elastic layer 33 may be selected from materials with a low adhesion coefficient.
  • the laser absorption rate of the elastic layer 33 is smaller than the laser absorption rate of the sacrificial layer 41. It can be understood that the laser absorption rate of the sacrificial layer 41 is greater than the laser absorption rate of the elastic layer 33.
  • the sacrificial layer 41 is ablated by the laser. After the sacrificial layer 41 is ablated, the elastic layer 33 and the functional unit 20 together constitute the electronic device 1.
  • step S709 a release process is performed to separate a plurality of the functional units from the rigid substrate together with the elastic layer.
  • a release process is performed to separate a plurality of the functional units 20 and the elastic layer 33 from the rigid substrate 10, specifically including:
  • the sacrificial layer 41 is ablated by laser to separate the functional units 20 and the elastic layer 33 from the rigid substrate 10.
  • the rigid substrate 10 is made of a transparent material, so that the laser can illuminate the electronic device 1 through the rigid substrate 10, so that the electronic device 1 is peeled from the rigid substrate 10. It can be understood that the electronic device 1 is separated from the rigid substrate 10, and the back of the rigid substrate 10 can be irradiated with laser scanning. Since the rigid substrate 10 has light permeability, laser light is irradiated on the sacrificial layer 41. Further, in order to improve the absorption rate of the sacrificial layer 41 to the laser and separate the sacrificial layer 41 from the rigid substrate 10, a laser absorber may be doped into the sacrificial layer 41.
  • the laser can be scanned from one end of the rigid substrate 10 to the other end, so that the functional unit 20 is detached from the rigid substrate 10 and peeled off.
  • the laser may be a gas laser or a solid-state laser.
  • the solid-state laser is, for example, a semiconductor laser.
  • the gas laser is, for example, but not limited to, excimer laser, Nd-YAG laser, Ar laser, CO 2 laser, He-Ne laser, or the like.
  • the laser absorber is, for example, but not limited to one of salicylates, benzophenones, benzotriazoles, substituted acrylonitriles, triazines, or a combination thereof.
  • a release process is performed to separate several functional units 20 and the elastic layer 33 from the rigid substrate 10, specifically including:
  • the sacrificial layer 41 is dissolved by a dissolving agent, so that the functional units 20 and the elastic layer 33 are separated from the rigid substrate 10 together.
  • the sacrificial layer 41 includes, but is not limited to, one of inorganic salt compounds, inorganic oxides, organic polymer compounds, and metals, or a combination thereof.
  • the dissolving agent is a liquid. In other embodiments, the dissolving agent may also be gas or light, such as laser.
  • the dissolving agent includes, but is not limited to, at least one of water, acid, alkali, organic solution, developer, or a combination thereof.
  • the inorganic salt compounds are selected from materials that are easily tolerated by water, such as potassium, sodium, ammonium, nitrate, acetate, etc.; the inorganic oxides are selected from those that are easily soluble in acid or alkali Materials, such as alkaline oxides, acidic oxides, or amphoteric oxides; the organic polymer compound is selected from materials that are easily soluble in water, organic solvents, or developers, such as epoxy resin; Used in acid or alkali metal materials, such as aluminum and potassium.
  • FIG. 9 shows a flowchart of a method for manufacturing an electronic device according to a fifth embodiment of the present invention.
  • FIG. 10 shows a method for manufacturing an electronic device according to a fifth embodiment of the present invention. Schematic diagram of the manufacturing process of the device.
  • the manufacturing method of the electronic device 1 includes the following steps.
  • Step S901 a rigid substrate is provided.
  • Step S903 a number of functional units arranged at intervals are arranged on the rigid substrate.
  • step S905 an elastic layer is formed on the rigid substrate, and the elastic layer is wrapped around the functional units.
  • the elastic layer 34 is not doped with a laser absorber, and the elastic layer 34 is made of a material with a low adhesion coefficient.
  • Step S907 a release process is performed to separate the functional unit and the elastic layer from the rigid substrate.
  • the preset area 100 includes a first area 101 and a second area 102. It can be understood that, in the embodiment of the invention, the first region 101 is a region where the base 21 is in contact with the rigid substrate 10. The second region 102 is a region where the elastic layer 34 is in contact with the rigid substrate 10.
  • a release process is performed to separate the functional unit 20 and the elastic layer 34 from the rigid substrate 10, which specifically includes:
  • the substrate 21 is located in the first area 101.
  • the adhesive force between the elastic layer 34 and the rigid substrate 10 is smaller than the adhesive force between the functional unit 20 and the rigid substrate 10, that is, the elastic layer 34 uses an elastomer having a low adsorption force, such as PDMS.
  • the laser scans and irradiates only the area where the base 21 contacts the rigid substrate 10, and applies mechanical external force on the elastic layer 34 to peel off the ablated base 21 and the elastic layer 34 from the rigid substrate 10 together, thereby The ablated substrate 21 and the elastic layer 30 together constitute the electronic device 1. Since the laser only ablate the substrate 21, the ablated substrate 21 and the elastic layer 34 are located on different planes on the side close to the ablated surface.
  • a release process is performed to separate the functional unit 20 and the elastic layer 34 from the rigid substrate 10, specifically including:
  • the elastic layer 34 may be doped with a laser absorber, and the elastic body in the elastic layer 34 may be selected from materials with a higher adhesion coefficient.
  • the side surface of the base 21 contacting the rigid substrate 10 is a non-stick surface.
  • the adhesion of the base 21 to the rigid substrate 10 is low, that is, a material with a low adhesion coefficient may be used for the base 21.
  • the elastic layer 34 has stronger adhesion to the functional unit 20 than the rigid substrate 10 during the process of absorbing the laser light and raising the temperature, and the elastic layer 34 The rigid substrate 10 maintains very low adhesion or no adhesion, so that the functional unit 20 and the elastic layer 34 are separated from the rigid substrate 10 together.
  • the predetermined area 100 of the electronic device 1 is ablated by laser to separate the functional unit 20 and the elastic layer 34 from the rigid substrate 10, and specifically includes:
  • the first region 101 (that is, the base 21) is ablated using a first laser
  • the second region 102 (that is, the elastic layer 34 in contact with the rigid substrate 10 is irradiated with a second laser scan ), so that several functional units 20 are separated from the rigid substrate 10 together with the elastic layer 34.
  • the characteristic parameters of the first laser are different from the characteristic parameters of the second laser, and the characteristic parameters are, for example, but not limited to the energy density, wavelength, and number of scans of the laser. It can be understood that in an embodiment, the first laser and the second laser may simultaneously scan and illuminate the elastic layer 34 and the substrate 21. In other embodiments, the first laser and the second laser may scan and irradiate the preset area of the electronic device 1 at preset time intervals, respectively.
  • the embodiment of the invention provides an electronic device and a manufacturing method thereof.
  • the manufacturing process of the electronic device by arranging the electronic device to be peeled off on the rigid substrate, wherein the electronic device includes several functional units arranged at intervals and an elastic layer covering the several functional units; Ablation treatment to separate several functional units from the rigid substrate together with the elastic layer. Since the electronic device of the present invention is compatible with existing semiconductor, display panel and other manufacturing technologies, the production efficiency is improved.
  • the elastic layer can not only provide elasticity for the electronic device, but also be laser-released together with the functional unit, that is, the elastic layer and the functional unit are separated from the rigid substrate at the same time.
  • the electronic device can be easily separated from the rigid substrate to avoid damage to the electronic device, thereby protecting the electronic device, and mass production of the electronic device is realized by laser release. Advantage in terms of rate.

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Abstract

一种电子器件及其制作方法。所述电子器件的制作方法包括如下步骤：提供刚性基板(10) (S101)；在所述刚性基板(10)上设置待剥离的电子器件(1)，所述电子器件(1)包括间隔排列的若干功能单元(20)和包覆若干所述功能单元(20)的弹性层(30) (S103)；以及进行离型处理，以使若干所述功能单元(20)与所述弹性层(30)一同从所述刚性基板(10)上分离(S105)。该电子器件的制作方法，可与现有的半导体、显示面板等制造技术兼容，提高了生产效率。

Description

电子器件及其制作方法 技术领域
本发明涉及电子技术领域，尤其涉及一种电子器件及其制作方法。
背景技术
随着电子技术的发展，消费者对于电子装置的需求越来越多样化、个性化。电子装置的形态也随之发生变化，即由原来的直板化逐渐演变成折叠式、滑盖式等，并有进一步演变成柔性化甚至弹性化的趋势。现有的电子装置的制作方法，是在弹性的衬底上形成图案化的导线，然后再通过转移印章的方式将芯片固定于衬底上而与导线连接。然而，这种制作方法与现有的半导体、显示面板等制造技术不兼容，造成生产效率低下。
发明内容
鉴于现有技术中存在的上述问题，本发明提供一种生产效率较高的电子器件及其制作方法。
为了实现上述目的，本发明实施方式提供如下技术方案：
第一方面，本发明提供了一种电子器件的制作方法，其包括如下步骤：
提供刚性基板；
在所述刚性基板上设置待剥离的电子器件，所述电子器件包括间隔排列的若干功能单元和包覆若干所述功能单元的弹性层；以及
进行离型处理，以使若干所述功能单元与所述弹性层一同从所述刚性基板上分离。
第二方面，本发明提供了一种电子器件，通过上述的电子器件的制作方法制成，所述电子器件包括若干间隔排列的若干功能单元和包覆若干所述功能单元的弹性层。
本发明的电子器件的制作方法，通过在所述刚性基板上设置待剥离的电子器件，所述电子器件包括间隔排列的若干功能单元和包覆若干所述功能单元的弹性层；再进行离型处理，以使若干所述功能单元与所述弹性层一同从所述刚性基板上分离。由于本发明的电子器件可与现有的半导体、显示面板等制造技术兼容，提高了生产效率。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明第一实施例提供的电子器件的制作方法的流程图。
图2是本发明第一实施例提供的电子器件的制作制造流程示意图。
图3是本发明第二实施例提供的电子器件的制作方法的流程图。
图4是本发明第二实施例提供的电子器件的制作制造流程示意图。
图5是本发明第三实施例提供的电子器件的制作方法的流程图。
图6是本发明第三实施例提供的电子器件的制作制造流程示意图。
图7是本发明第四实施例提供的电子器件的制作方法的流程图。
图8是本发明第四实施例提供的电子器件的制作制造流程示意图。
图9是本发明第五实施例提供的电子器件的制作方法的流程图。
图10是本发明第五实施例提供的电子器件的制作制造流程示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请一并参阅图1和图2，图1所示为本发明实施例提供了一种电子器件的制作方法的流程图，图2所示为本发明实施例提供了一种电子器件的制作工艺的流程示意图。电子器件1的制作方法包括如下步骤。
步骤S101，提供刚性基板。
刚性基板10可以为，但不局限于玻璃基板、金属基板、或陶瓷基板。优选的，刚性基板10为薄型玻璃基板，以方便电子器件1在制作完成后与刚性基板10快速分离。具体的，所述玻璃基板例如是，但不局限于钠钙玻璃、无碱玻璃、磷酸系玻璃或石英。所述刚性基板10用于在电子器件1的制作过程 中，支撑所述电子器件1。刚性基板10由透明材料制成，以便激光能够透过刚性基板10而照射电子器件1，从而实现电子器件1从刚性基板10上剥离。
步骤S103，在所述刚性基板上设置待剥离的电子器件。
在本实施例中，电子器件1包括间隔排列的若干功能单元20和包覆若干所述功能单元20的弹性层30。功能单元20例如是，但不局限于柔性显示单元、微芯片、触控传感器等功能元件。在本实施例中，每一所述功能单元20包括基底21和功能器件22，且相邻两基底21与所述刚性基板10之间形成有空间201。其中，基底21与功能器件22层叠设置。在一些实施例中，每一功能单元20仅包括功能器件22，也即基底21可以省略。
在一实施例中，在所述刚性基板10上设置待剥离的电子器件1，具体包括：
在所述刚性基板10上设置若干间隔排列的功能单元20；
在所述功能单元20的背离所述刚性基板10的一侧覆盖弹性层30，以制得所述待剥离的电子器件1。
可以理解的，所述在所述刚性基板10上设置若干间隔排列的功能单元20，具体包括：
在所述刚性基板10上依次设置若干间隔排列的基底21及功能器件22，以制得若干所述功能单元20；或
在所述刚性基板10上设置若干间隔排列的功能器件22，以制得若干所述功能单元20；或
在所述刚性基板10上依次设置基底层(图未示)及若干间隔排列的功能器件22；
图案化所述基底层，以制得若干所述功能单元20。
在本实施例中，图案化所述基底层可采用现有的构图工艺。具体的，在本实施例中，所述基底层以若干所述功能器件22作为掩膜版或以单独的与功能器件22层叠设置的掩膜版进行光刻和刻蚀。在光刻和刻蚀之前，在若干所述功能器件22上涂覆一层光刻胶。如此，将作用光投射于掩膜版，并对光刻胶进行曝光、显影等处理，使得暴露于光刻胶相对两侧的所述基底层被刻蚀，以获得若干间隔排列的所述基底21，也即在所述刚性基板10上设置间隔排列的若干所述功能单元20。
在本实施例中，基底21由透明材料制成。在本实施例中，基底21可以为柔性基底，也可以为刚性基底。基底21例如是，但不局限于聚酰亚胺(Polyimide，PI)基底、无色透明聚酰亚胺(Colorless Polyimide，CPI)基底、聚对苯二甲酸乙二醇酯(polyethylene terephthalate，PET)基底、聚酰胺(polyamide，PA)基底、聚碳酸酯(polycarbonate，PC)基底、聚苯醚砜(polyethersulfone，PES)基底、聚萘二甲酸乙二醇酯(polyethylene naphthalate，PEN)基底、聚甲基丙烯酸甲酯(polymethylmethacrylate，PMMA)基底、环烯烃共聚物(cycloolefin copolymer，COC)基底、环烯烃聚合物(Cyclo-olefin polymer，COP)基底、玻璃基底、硅基底中的一种。
所述功能器件22包括，但不局限于微芯片、通信总线。所述微芯片为具有特定功能的电子器件。所述微芯片例如是，但不局限于具有处理功能、存储功能、计算功能、显示功能、感测功能或通信功能等的电子器件。所述微芯片包括但不局限于：直接制作在基底21上的电路、转移到基底21上的已封装微芯片、转移到基底21上的未封装微芯片。所述通信总线用于实现这些电子器件之间的通信连接。在本实施例中，所述电子器件1为显示面板。所述显示面板例如是，但不局限于液晶显示(Liquid Crystal Display,LCD)面板、量子点显示(Quantum Dot Light Emitting Diodes，QLED)面板、电子纸(E-paper Display，EPD)、触摸屏(Touch panel)、柔性太阳能电池(Page View，PV)板、射频标签(Radio Frequency Identification,RFID)等具有特定功能的产品或部件。
可选的，基底21的弹性系数比弹性层30的弹性系数低，从而电子器件1处于形变状态时，比如拉伸或弯折，基底21能够用于支撑及保护功能器件22。由于弹性层30填充于基底21之间的空间201内，且包覆基底21和功能器件22，从而电子器件1的变形更灵活，并保护所述电子器件1。可以理解的，空间201的宽度可以根据功能器件22的图案化制程所需尺寸及功能器件22的密度来设计。
在本实施例中，所述弹性层30中包含有弹性体。所述弹性体优选在外力作用下其内部的高分子链或晶格结构可被拉伸的材料。所述弹性体例如是，但不局限于天然橡胶、合成橡胶、热塑性弹性体中的一者或它们之间的组合。所述天然橡胶例如是聚异戊二烯。所述合成橡胶包括，但不局限于丁苯橡胶、顺 丁橡胶、氯丁橡胶、丁腈橡胶、丁基橡胶或硅胶。所述硅胶例如是聚二甲基硅氧烷(polydimethylsiloxane，PDMS)。所述热塑性弹性体包括，但不局限于苯乙烯嵌段共聚物、热塑性烯烃、热塑性硫化橡胶、热塑性聚氨酯、热塑性共聚酯或热塑性聚酰胺。
可选的，由于某些弹性体的激光吸收率较低，因此为了提高弹性层30的激光吸收率，所述弹性层中还掺杂有激光吸收剂。所述激光吸收剂例如是，但不局限于水杨酸酯类、二苯甲酮类、苯并三唑类、取代丙烯腈类、三嗪类中的一者或它们之间的组合。
在一具体的实施例中，在所述功能单元20的背离所述刚性基板10的一侧覆盖弹性层30，以制得所述待剥离的电子器件1，具体包括：
配置包含有弹性体及激光吸收剂的液态胶；
将所述液态胶涂布在所述刚性基板10和多个所述功能单元20上，并固化，以使所述弹性层30形成于所述刚性基板10上，并且包覆功能单元20，以制得所述待剥离的电子器件1。
在另一具体的实施例中，在所述功能单元20的背离所述刚性基板10的一侧覆盖弹性层30，以制得所述待剥离的电子器件1，具体包括：
预先制备包含有弹性体及激光吸收剂的固态的所述弹性层30；
将所述弹性层30与所述刚性基板10及所述功能单元20进行层叠、加压/加热来进行贴合，以使所述弹性层30贴附于所述刚性基板10上，并且包覆所述基底21和所述功能器件22，以制得所述待剥离的电子器件1。
在其他实施例中，在所述功能单元20的背离所述刚性基板10的一侧覆盖弹性层30，以制得所述待剥离的电子器件1，具体包括：
在所述刚性基板10和多个所述功能单元20上沉积包含有弹性体及激光吸收剂的弹性层30，以使所述弹性层30形成于所述刚性基板10上，并且包覆所述基底21和所述功能器件22，以制得所述待剥离的电子器件1。
可以理解的，沉积工艺包括，但不局限于化学汽相沉积、脉冲激光沉积以及原子层沉积。
步骤S105，进行离型处理，以使若干所述功能单元与所述弹性层一同从所述刚性基板上分离。
在本实施例中，进行离型处理，以使若干所述功能单元20与所述弹性层 30一同从所述刚性基板10上分离，具体包括：
采用激光烧蚀所述弹性层30和所述基底21，以使若干所述功能单元20与所述弹性层30一同从所述刚性基板10上分离。
具体的，所述电子器件1从所述刚性基板10分离，可用激光扫描照射刚性基板10的背面。由于刚性基板10具有透光性，因此激光照射在位于刚性基板10和电子器件1之间的基底21及所述弹性层30上。进一步的，由于弹性层30中掺入有激光吸收剂，从而弹性层30能够吸收特定波长的激光，因此大大提高了弹性层30对激光的吸收率而使弹性层30与刚性基板10分离。可选的，激光可从刚性基板10一端向另一端扫描，使得刚性基板10脱离基底21及所述弹性层30而被剥离。在本实施例中，所述激光可以为气体激光或固体激光。所述固体激光例如是半导体激光。所述气体激光例如是，但不局限于准分子激光、Nd-YAG激光、Ar激光、CO2激光或He-Ne激光等。
在本实施例中，基底21的激光吸收率与弹性层30的激光吸收率大致相同。如此，当激光扫描照射所述弹性层30时，基底21与弹性层30同时被激光烧蚀一薄层，且烧蚀后的基底21与弹性层30在靠近烧蚀面的一侧位于同一平面，从而烧蚀后的基底21与弹性层30共同构成电子器件1。可选的，在本实施例中，基底21的厚度及弹性层30的厚度均大于激光烧蚀的深度。
请一并参阅图3和图4，图3所示为本发明第二实施例提供了一种电子器件的制作方法的流程图，图4所示为本发明第二实施例提供了一种电子器件的制作工艺的流程示意图。电子器件1的制作方法包括如下步骤。
步骤S301，提供刚性基板。
具体地，可以对应参考第一实施例中的方法步骤S101，在此不再赘述。
步骤S303，在所述刚性基板上设置若干间隔排列的功能单元。
具体地，可以对应参考第一实施例中的方法步骤S103，在此不再赘述。
步骤S305，在所述刚性基板上形成第一弹性层，并将所述第一弹性层包覆若干所述功能单元。
在本实施例中，弹性层30包括第一弹性层31。所述第一弹性层31中包含有所述弹性体和激光吸收剂，从而第一弹性层31能够吸收特定波长的激光。可以理解的，在所述刚性基板10上形成第一弹性层31的方法包括涂布、层叠及沉积等工艺，具体可以参阅第一实施例中的弹性层30的形成方法，在此不 再赘述。
步骤S307，在所述第一弹性层上形成第二弹性层。
在本实施例中，弹性层30还包括第二弹性层32。所述第二弹性层32中包含有所述弹性体。可以理解的，在所述第一弹性层31形成所述第二弹性层32的方法包括涂布、层叠及沉积等工艺，具体可以参阅第一实施例中的弹性层30的形成方法，在此不再赘述。不同的是，所述第二弹性层32中未掺杂激光吸收剂。
所述第二弹性层32的激光吸收率小于所述第一弹性层31的激光吸收率。可以理解的，第一弹性层31的激光吸收率与基底21的激光吸收率大致相同，而第二弹性层32的激光吸收率小于基底21的激光吸收率。如此，当激光扫描照射所述弹性层30时，第一弹性层31与基底21同时被激光烧蚀一薄层，从而烧蚀后的包覆于基底21的第一弹性层31与第二弹性层32及功能单元20共同构成电子器件1。可选的，在本实施例中，第一弹性层31的厚度小于或等于激光烧蚀的深度，且第一弹性层31的厚度小于所述基底21的厚度。
步骤S309，进行离型处理，以使所述功能单元与覆盖于所述功能单元的第一弹性层及所述第二弹性层一同从所述刚性基板上分离。
在本实施例中，进行离型处理，以使所述功能单元20与覆盖于所述功能单元20的第一弹性层31及所述第二弹性层32一同从所述刚性基板10上分离，具体包括：
采用激光烧蚀所述第一弹性层31和所述基底21，以使所述功能单元20与覆盖于所述功能单元20的第一弹性层31及所述第二弹性层32一同从所述刚性基板10上分离。
具体地，可以对应参考第一实施例中的方法步骤S105，在此不再赘述。
请一并参阅图5和图6，图5所示为本发明第三实施例提供了一种电子器件的制作方法的流程图，图6所示为本发明第三实施例提供了一种电子器件的制作工艺的流程示意图。电子器件1的制作方法包括如下步骤。
步骤S501，提供刚性基板。
具体地，可以对应参考第一实施例中的方法步骤S101，在此不再赘述。
步骤S503，在所述刚性基板上设置若干间隔排列的功能单元。
具体地，可以对应参考第一实施例中的方法步骤S103，在此不再赘述。
步骤S505，在所述刚性基板上形成牺牲层，并将所述牺牲层包覆若干所述功能单元。
在所述刚性基板10上形成牺牲层40的方法包括涂布、层叠及沉积等工艺。在第三实施例中，牺牲层40中包含激光吸收材料，从而牺牲层40能够吸收特定波长的激光。进一步的，所述在所述刚性基板10上形成牺牲层40还可以是通过胶层将牺牲层40贴合于所述刚性基板10上。
在本实施例中，牺牲层40由透明材料制成。牺牲层40例如是，但不局限于PI基底、CPI基底、PE基底、PA基底、PC基底、PES基底、PEN基底、PMMA基底、COC基底、COP基底、氧化铟锡(Indium tin oxide；ITO)、金属等无机材料中的一种。在本实施例中，牺牲层40和基底21的材料相同，均为PI基底。
步骤S507，在所述牺牲层上形成弹性层。
在本实施例中，牺牲层40设置于所述刚性基板10和所述弹性层33之间。可以理解的，在所述牺牲层40上形成弹性层33的方法包括涂布、层叠及沉积等工艺。
弹性层33中未掺杂激光吸收剂，且弹性层33中的弹性体可选自粘附系数较低的材料。弹性层33的激光吸收率小于牺牲层40的激光吸收率。可以理解的，牺牲层40的激光吸收率与基底21的激光吸收率大致相同，而弹性层33的激光吸收率小于基底21的激光吸收率。如此，当激光扫描照射牺牲层40时，牺牲层40与基底21同时被激光烧蚀一薄层，从而烧蚀后的牺牲层40与弹性层33及功能单元20共同构成电子器件1。可选的，在本实施例中，牺牲层40的厚度小于或等于激光烧蚀的深度，且牺牲层40的厚度小于所述基底21的厚度。
步骤S509，进行离型处理，以使所述功能单元与覆盖于所述功能单元的牺牲层及所述弹性层一同从所述刚性基板上分离。
在本实施例中，进行离型处理，以使所述功能单元20与覆盖于所述功能单元20的牺牲层40及所述弹性层33一同从所述刚性基板10上分离，具体包括：
采用激光烧蚀所述牺牲层40和所述基底21，以使所述功能单元20与覆盖于所述功能单元20的牺牲层40及所述弹性层33一同从所述刚性基板10 上分离。
具体地，可以对应参考第一实施例中的方法步骤S105，在此不再赘述。
请一并参阅图7和图8，图7所示为本发明第四实施例提供了一种电子器件的制作方法的流程图，图8所示为本发明第四实施例提供了一种电子器件的制作工艺的流程示意图。电子器件1的制作方法包括如下步骤。
步骤S701，提供刚性基板。
具体地，可以对应参考第一实施例中的方法步骤S101，在此不再赘述。
步骤S703，在所述刚性基板上形成牺牲层。
可以理解的，在所述刚性基板10上形成牺牲层41的方法包括涂布、层叠及沉积等工艺。在第四实施例中，牺牲层41中包含激光吸收材料，且牺牲层41的材料选择可参阅第三实施例中所述的牺牲层40。牺牲层41与刚性基板10层叠设置。
步骤S705，在所述牺牲层上形成若干间隔排列的功能单元。
具体地，在所述牺牲层41上形成若干间隔排列的所述功能单元20，具体包括：
在所述牺牲层41上依次设置若干间隔排列的基底21和功能器件22，以制得若干所述功能单元20；或
在所述牺牲层41上设置若干间隔排列的功能器件32，以制得若干所述功能单元20；或
在所述牺牲层41上依次形成基底层及若干间隔排列的所述功能器件32；
图案化所述基底层，以制得若干所述功能单元20。
在本实施例中，将若干所述基底21间隔地设置在所述牺牲层41上，并在每一所述基底21远离所述牺牲层41的一侧设置功能器件22，如此在牺牲层41上形成功能单元20。基底21与功能器件22层叠设置。在其他实施例中，功能单元20仅包括若干间隔排列的功能器件22，也即基底21可以省略。
可以理解的，在一实施例中，牺牲层41与基底21通过不同工艺依次形成在刚性基板10的上方。在其他实施例中，牺牲层41与基底21可以一体成型。也即，在刚性基板10上形成基底21，并图案化基底21，以形成厚度不同的基底21和牺牲层41。基底21的厚度大于牺牲层41的厚度。
步骤S707，在所述牺牲层上形成弹性层，并且使所述弹性层包覆所述若 干功能单元。
在本实施例中，弹性层33中未掺杂激光吸收剂，且弹性层33中的弹性体可选自粘附系数较低的材料。弹性层33的激光吸收率小于牺牲层41的激光吸收率。可以理解的，牺牲层41的激光吸收率大于弹性层33的激光吸收率。如此，当激光扫描照射牺牲层41时，牺牲层41被激光烧蚀一薄层。牺牲层41在烧蚀后，弹性层33及功能单元20共同构成电子器件1。
步骤S709，进行离型处理，以使若干所述功能单元与所述弹性层一同从所述刚性基板上分离。
在本实施例中，进行离型处理，以使若干所述功能单元20与所述弹性层33一同从所述刚性基板10上分离，具体包括：
采用激光烧蚀所述牺牲层41，以使所述若干所述功能单元20与所述弹性层33一同从所述刚性基板10上分离。
可选的，所述刚性基板10由透明材料制成，以便激光能够透过所述刚性基板10而照射电子器件1，从而实现所述电子器件1从所述刚性基板10上剥离。可以理解的，所述电子器件1从所述刚性基板10分离，可用激光扫描照射刚性基板10的背面。由于刚性基板10具有透光性，因此激光照射在牺牲层41上。进一步的，为了提高了牺牲层41对激光的吸收率而使牺牲层41与刚性基板10分离，可在牺牲层41中掺入激光吸收剂。可选的，激光可从刚性基板10一端向另一端扫描，使得功能单元20脱离刚性基板10而被剥离。在本实施例中，所述激光可以为气体激光或固体激光。所述固体激光例如是半导体激光。所述气体激光例如是，但不局限于准分子激光、Nd-YAG激光、Ar激光、CO2激光或He-Ne激光等。所述激光吸收剂例如是，但不局限于水杨酸酯类、二苯甲酮类、苯并三唑类、取代丙烯腈类、三嗪类中的一者或它们之间的组合。
可以理解的，在一些实施例中，进行离型处理，以使若干所述功能单元20与所述弹性层33一同从所述刚性基板10上分离，具体包括：
采用溶解剂溶解所述牺牲层41，以使所述若干所述功能单元20与所述弹性层33一同从所述刚性基板10上分离。
在本实施例中，牺牲层41中包含，但不局限于无机盐类化合物、无机氧化物、有机高分子化合物、金属中的一者或它们之间的组合。在本实施例中， 所述溶解剂为液体。在其他实施例中，所述溶解剂还可以是气体或光，例如激光。所述溶解剂包括，但不局限于水、酸、碱、有机溶液、显影液中的至少一者或它们之间的组合。优选的，所述无机盐类化合物选自易容于水的材料，例如钾盐、钠盐、铵盐、硝酸盐、醋酸盐等；所述无机氧化物选自易溶于酸或碱的材料，例如碱性氧化物、酸性氧化物或两性氧化物；所述有机高分子化合物选自易溶于水、有机溶剂或显影剂的材料，例如是环氧树脂；所述金属选自易溶于酸或碱的金属材料，如铝、钾等。
请一并参阅图9和图10，图9所示为本发明第五实施例提供了一种电子器件的制作方法的流程图，图10所示为本发明第五实施例提供了一种电子器件的制作工艺的流程示意图。电子器件1的制作方法包括如下步骤。
步骤S901，提供刚性基板。
具体地，可以对应参考第一实施例中的方法步骤S101，在此不再赘述。
步骤S903，在所述刚性基板上设置若干间隔排列的功能单元。
具体地，可以对应参考第一实施例中的方法步骤S103，在此不再赘述。
步骤S905，在所述刚性基板上形成弹性层，并使所述弹性层包覆若干所述功能单元。
具体地，可以对应参考第一实施例中的方法步骤S103，在此不再赘述。不同的是，在本实施例中，弹性层34中未掺杂激光吸收剂，且弹性层34由粘附系数较低的材料制成。
步骤S907，进行离型处理，以使所述功能单元与所述弹性层一同从所述刚性基板上分离。
所述预设区域100包括第一区域101和第二区域102。可以理解的，在发明实施例中，第一区域101为基底21与刚性基板10接触的区域。第二区域102为弹性层34与刚性基板10接触的区域。
在一具体实施例中，进行离型处理，以使所述功能单元20与所述弹性层34一同从所述刚性基板10上分离，具体包括：
采用激光烧蚀所述第一区域101(也即所述基底21)，并施加外力于所述弹性层34上，以使所述功能单元20与所述弹性层34一同从所述刚性基板10上分离。
在本实施例中，基底21位于第一区域101。弹性层34与刚性基板10之 间的粘附力小于功能单元20与刚性基板10之间的粘附力，也即弹性层34采用吸附力低的弹性体，例如PDMS。具体的，激光仅扫描照射基底21与刚性基板10相接触的区域，并通过施加机械外力于弹性层34上，以使烧蚀后的基底21与弹性层34一同从刚性基板10上剥离，从而烧蚀后的基底21与弹性层30共同构成电子器件1。由于激光仅对基底21进行烧蚀处理，因此烧蚀后的基底21与弹性层34在靠近烧蚀面的一侧位于不同平面。
在另一具体实施例中，进行离型处理，以使所述功能单元20与所述弹性层34一同从所述刚性基板10上分离，具体包括：
采用激光烧蚀所述第二区域102(也即与所述刚性基板10接触的所述弹性层34)，并施加外力于所述弹性层34上，以使所述功能单元20与所述弹性层34一同从所述刚性基板10上分离。其中，所述弹性层34与所述刚性基板10之间的粘附力大于所述功能单元20与所述刚性基板10之间的粘附力。在本实施例中，弹性层34中可掺杂激光吸收剂，且弹性层34中的弹性体可选自粘附系数较高的材料。基底21接触刚性基板10的侧面为不粘面。在其他实施例中，基底21与刚性基板10的粘附力低，也即基底21的可采用粘附系数较低的材料。在其他实施例中，弹性层34在吸收所述激光而升温度的过程中，弹性层34相对于功能单元20的粘附力比相对于刚性基板10的粘附力更强，且弹性层34于刚性基板10保持很低粘附力或无粘附力，从而实现所述功能单元20与所述弹性层34一同从所述刚性基板10上分离。在其他具体实施例中，采用激光烧蚀电子器件1的预设区域100，以使所述功能单元20与所述弹性层34一同从所述刚性基板10上分离，具体包括：
采用第一激光烧蚀所述第一区域101(也即所述基底21)，并采用第二激光扫描照射所述第二区域102(也即与所述刚性基板10接触的所述弹性层34)，以使若干所述功能单元20与所述弹性层34一同从所述刚性基板10上分离。其中，所述第一激光的特征参数不同于所述第二激光的特征参数，所述特征参数例如是，但不局限于激光的能量密度、波长、扫描次数。可以理解的，在一实施例中，第一激光和第二激光可同时扫描照射所述弹性层34和所述基底21。在其他实施例中，第一激光和第二激光可按预设时间间隔分别扫描照射所述电子器件1的预设区域。
本发明实施例提供了一种电子器件及其的制作方法。在电子器件的制作过 程中，通过在所述刚性基板上设置待剥离的电子器件，其中，所述电子器件包括间隔排列的若干功能单元和包覆若干所述功能单元的弹性层；再进行激光烧蚀处理，以使若干所述功能单元与所述弹性层一同从所述刚性基板上分离。由于本发明的电子器件可与现有的半导体、显示面板等制造技术兼容，提高了生产效率。
此外，由于若干所述功能单元被弹性层包覆，因此弹性层不仅能够为电子器件提供弹性，且与功能单元一起激光离型，也即弹性层与功能单元同时从刚性基板上分离，从而所述电子器件能够轻易地从所述刚性基板上分离而避免所述电子器件的损害，进而保护了所述电子器件，通过激光离型实现电子器件的量产，拥有激光离型工艺在产量、良率方面的优势。
以上对本发明实施例进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的一般技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上上述，本说明书内容不应理解为对本发明的限制。

Claims (20)

  1. 一种电子器件的制作方法，其特征在于，包括如下步骤:
    提供刚性基板；
    在所述刚性基板上设置待剥离的电子器件，所述电子器件包括间隔排列的若干功能单元和包覆若干所述功能单元的弹性层；以及
    进行离型处理，以使若干所述功能单元与所述弹性层一同从所述刚性基板上分离。
  2. 如权利要求1所述的电子器件的制作方法，其特征在于，所述在所述刚性基板上设置待剥离的电子器件，具体包括：
    在所述刚性基板上设置若干间隔排列的功能单元；
    在所述功能单元的背离所述刚性基板的一侧覆盖弹性层，以制得所述待剥离的电子器件。
  3. 如权利要求2所述的电子器件的制作方法，其特征在于，所述在所述刚性基板上设置若干间隔排列的功能单元，具体包括：
    在所述刚性基板上依次设置若干间隔排列的基底及功能器件，以制得若干所述功能单元；或
    在所述刚性基板上设置若干间隔排列的功能器件，以制得若干所述功能单元；或
    在所述刚性基板上依次设置基底层及若干间隔排列的功能器件；
    图案化所述基底层，以制得若干所述功能单元。
  4. 如权利要求2所述的电子器件的制作方法，其特征在于，所述在所述功能单元的背离所述刚性基板的一侧覆盖弹性层，以制得所述待剥离的电子器件，具体包括：
    在所述刚性基板上设置所述弹性层，以使所述弹性层包覆所述若干所述功能单元，以制得所述待剥离的电子器件，其中，所述弹性层中包含有弹性体。
  5. 如权利要求4所述的电子器件的制作方法，其特征在于，所述弹性体选自天然橡胶、合成橡胶、热塑性弹性体中的一者或它们之间的组合；所述天然橡胶包括聚异戊二烯，所述合成橡胶包括丁苯橡胶、顺丁橡胶、氯丁橡胶、丁腈橡胶、丁基橡胶或硅胶，所述热塑性弹性体包括苯乙烯嵌段共聚物、热塑性烯烃、热塑性硫化橡胶、热塑性聚氨酯、热塑性共聚酯或热塑性聚酰胺。
  6. 如权利要求2所述的电子器件的制作方法，其特征在于，所述在所述刚性基板上设置所述弹性层，以使所述弹性层包覆所述若干所述功能单元，以制得所述待剥离的电子器件，具体包括：
    在所述刚性基板上形成第一弹性层，并将所述第一弹性层包覆所述若干所述功能单元，以制得所述待剥离的电子器件，其中，所述第一弹性层中包含有所述弹性体和激光吸收剂。
  7. 如权利要求6所述的电子器件的制作方法，其特征在于，所述激光吸收剂选自水杨酸酯类、二苯甲酮类、苯并三唑类、取代丙烯腈类、三嗪类中的一者或它们之间的组合。
  8. 如权利要求6所述的电子器件的制作方法，其特征在于，在所述刚性基板上形成第一弹性层，并将所述第一弹性层包覆所述若干所述功能单元之后，所述制作方法还包括：
    在所述第一弹性层上形成第二弹性层，以制得所述待剥离的电子器件，其中，所述第二弹性层中包含有所述弹性体，且所述第二弹性层的激光吸收率小于所述第一弹性层的激光吸收率。
  9. 如权利要求8所述的电子器件的制作方法，其特征在于，所述进行离型处理，以使若干所述功能单元与所述弹性层一同从所述刚性基板上分离，具体包括：
    采用所述激光烧蚀所述第一弹性层和所述基底，以使所述功能单元与覆盖于所述功能单元上的所述第一弹性层一同从所述刚性基板上分离；或者是
    采用所述激光烧蚀所述第一弹性层和所述基底，以使所述功能单元与覆盖于所述功能单元上的所述第一弹性层及所述第二弹性层一同从所述刚性基板上分离。
  10. 如权利要求2所述的电子器件的制作方法，其特征在于，所述制作方法还包括：
    在所述刚性基板和所述弹性层之间设置有牺牲层。
  11. 如权利要求10所述的电子器件的制作方法，其特征在于，所述在所述刚性基板和所述弹性层之间设置有牺牲层，具体包括：
    在所述刚性基板上形成所述牺牲层，并使所述牺牲层包覆若干所述功能单元；
    所述在所述刚性基板上设置所述弹性层，以使所述弹性层包覆所述若干所述功能单元，以制得所述待剥离的电子器件，具体包括：
    在所述牺牲层上设置所述弹性层，并使所述弹性层覆盖所述牺牲层。
  12. 如权利要求11所述的电子器件的制作方法，其特征在于，所述进行离型处理，以使若干所述功能单元与所述弹性层一同从所述刚性基板上分离，具体包括：
    采用所述激光烧蚀所述牺牲层和所述基底，以使若干所述功能单元与覆盖于所述功能单元上的所述牺牲层及所述弹性层一同从所述刚性基板上分离。
  13. 如权利要求10所述的电子器件的制作方法，其特征在于，所述在所述刚性基板和所述弹性层之间设置有牺牲层，具体包括：
    在所述刚性基板上形成所述牺牲层，并将所述牺牲层与所述刚性基板层叠设置；
    所述在所述刚性基板上设置所述弹性层，以使所述弹性层包覆所述若干所述功能单元，以制得所述待剥离的电子器件，具体包括：
    在所述牺牲层上形成所述弹性层，并使所述弹性层包覆若干所述功能单元。
  14. 如权利要求13所述的电子器件的制作方法，其特征在于，所述进行离型处理，以使若干所述功能单元与所述弹性层一同从所述刚性基板上分离，具体包括：
    采用激光烧蚀所述牺牲层，以使若干所述功能单元与所述弹性层一同从所述刚性基板上分离；或
    采用溶解剂溶解所述牺牲层，以使所述若干所述功能单元与所述弹性层一同从所述刚性基板上分离。
  15. 如权利要求10所述的电子器件的制作方法，其特征在于，所述牺牲层的硬度大于所述弹性层的硬度。
  16. 如权利要求10所述的电子器件的制作方法，其特征在于，所述基底和所述牺牲层中均包含有聚酰亚胺、无色透明聚酰亚胺、聚对苯二甲酸乙二醇酯、聚酰胺、聚碳酸酯、聚苯醚砜、聚萘二甲酸乙二醇酯、聚甲基丙烯酸甲酯、环烯烃共聚物、环烯烃聚合物中的一者或它们之间的组合。
  17. 如权利要求2所述的电子器件的制作方法，其特征在于，所述进行离型处理，以使若干所述功能单元与所述弹性层一同从所述刚性基板上分离，具 体包括：
    采用所述激光烧蚀所述电子器件的预设区域，以使所述所述功能单元及所述弹性层一同从所述刚性基板上机械剥离。
  18. 如权利要求17所述的电子器件的制作方法，其特征在于，所述预设区域包括第一区域和第二区域，所述第一区域为所述基底与所述刚性基板接触的区域，所述第二区域为弹性层与所述刚性基板接触的区域，所述采用所述激光烧蚀所述电子器件的预设区域，以使所述所述功能单元及所述弹性层一同从所述刚性基板上机械剥离，具体包括：
    采用激光烧蚀所述第一区域或所述第二区域，并施加外力于所述弹性层上，以使所述所述功能单元及所述弹性层一同从所述刚性基板上机械剥离，其中，所述弹性层与所述刚性基板之间的粘附力小于或大于所述功能单元与所述刚性基板之间的粘附力。
  19. 如权利要求18所述的电子器件的制作方法，其特征在于，所述采用所述激光烧蚀所述电子器件的预设区域，以使所述所述功能单元及所述弹性层一同从所述刚性基板上机械剥离，具体包括：
    采用第一激光烧蚀所述第一区域，采用第二激光烧蚀所述第二区域，以使若干所述功能单元与所述弹性层一同从所述刚性基板上分离，其中，所述第一激光的特征参数不同于所述第二激光的特征参数。
  20. 一种电子器件，其特征在于，通过如权利要求1-19任一所述的电子器件的制作方法制成，所述电子器件包括若干间隔排列的若干功能单元和包覆若干所述功能单元的弹性层。
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