WO2020128847A1 - Film magnétique - Google Patents

Film magnétique Download PDF

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Publication number
WO2020128847A1
WO2020128847A1 PCT/IB2019/060941 IB2019060941W WO2020128847A1 WO 2020128847 A1 WO2020128847 A1 WO 2020128847A1 IB 2019060941 W IB2019060941 W IB 2019060941W WO 2020128847 A1 WO2020128847 A1 WO 2020128847A1
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WIPO (PCT)
Prior art keywords
magnetic film
polyoxide
magnetic
electrically insulative
film
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PCT/IB2019/060941
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English (en)
Inventor
Seong-Woo WOO
Jung-Ju Suh
Jennifer J. SOKOL
Matthew R.C. Atkinson
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3M Innovative Properties Company
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Priority to CN201980081107.4A priority Critical patent/CN113168947A/zh
Publication of WO2020128847A1 publication Critical patent/WO2020128847A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
    • H01F1/34—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
    • H01F1/342—Oxides
    • H01F1/344—Ferrites, e.g. having a cubic spinel structure (X2+O)(Y23+O3), e.g. magnetite Fe3O4
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
    • C04B35/2658—Other ferrites containing manganese or zinc, e.g. Mn-Zn ferrites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/0206—Manufacturing of magnetic cores by mechanical means
    • H01F41/0246—Manufacturing of magnetic circuits by moulding or by pressing powder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H05K9/0073—Shielding materials
    • H05K9/0075—Magnetic shielding materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields
    • H05K9/0073—Shielding materials
    • H05K9/0081—Electromagnetic shielding materials, e.g. EMI, RFI shielding
    • H05K9/0088—Electromagnetic shielding materials, e.g. EMI, RFI shielding comprising a plurality of shielding layers; combining different shielding material structure
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/95—Products characterised by their size, e.g. microceramics
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
    • H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
    • H05K1/0224—Patterned shielding planes, ground planes or power planes
    • H05K1/0227—Split or nearly split shielding or ground planes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0145—Polyester, e.g. polyethylene terephthalate [PET], polyethylene naphthalate [PEN]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/07—Electric details
    • H05K2201/0707—Shielding
    • H05K2201/0723—Shielding provided by an inner layer of PCB
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/08—Magnetic details
    • H05K2201/083—Magnetic materials

Definitions

  • Magnetic materials such as ferrites, are known. Sheets of magnetic material can be formed by tape casting.
  • an electrically insulative polyoxide single-layer magnetic film including iron, manganese and zinc is provided.
  • the electrically insulative poly oxide single-layer magnetic film has an average thickness greater than about 100 microns and opposing major first and second surfaces. At least one of the first and second surfaces has a first regular pattern of substantially parallel first grooves formed therein.
  • the first regular pattern includes a first pitch PI, the first grooves have an average full width at half-depth W, and W/Pl > 0.1.
  • an electromagnetic interference suppression film including a plurality of stacked electrically insulative polyoxide single-layer magnetic films.
  • Each single-layer magnetic film includes a plurality of magnetic islands separated from each other by a network of interconnected gaps.
  • Each magnetic island includes iron and manganese and a major first surface having a regular pattern of substantially parallel grooves formed therein. The pattern has a pitch P3, the grooves have an average full width at half-depth W3, and W3/P3 > 0.1.
  • a single-layer manganese zinc ferrite having an average thickness greater than about 100 microns and opposing major first and second surfaces is provided. At least one of the first and second surfaces of the single-layer manganese zinc ferrite includes a first regular pattern of substantially parallel first grooves formed therein. A Fourier transform of the first regular pattern has a peak at a first spatial frequency FI, the first grooves have an average full width at half-depth W, and W*F1 > 0.1.
  • an electrically insulative polyoxide single-layer magnetic film including a plurality of magnetic islands separated from each other by a network of interconnected gaps is provided.
  • Each magnetic island includes iron and manganese and a major first surface including first and second regular patterns of substantially parallel first and second grooves formed therein and arranged at respective pitches PI and P2. P2 is different from PI.
  • a method of making a magnetic film is provided. The method includes providing a sintered ceramic boule including a polyoxide including iron and manganese; slicing through the sintered ceramic boule using a wire saw to provide an uncracked film; and intentionally cracking the uncracked film to provide the magnetic film.
  • the magnetic film includes a plurality of magnetic islands separated from each other by a network of interconnected gaps.
  • FIG. 1 A is a schematic top view of a magnetic film
  • FIG. IB is a schematic bottom view of the magnetic film of FIG. 1A;
  • FIG. 1C is a schematic bottom view of a magnetic film
  • FIG. 2 is a schematic plot of a height profile in a cross-section perpendicular to a first regular pattern of a magnetic film
  • FIG. 3A is a schematic top perspective view of a magnetic film
  • FIG. 3B is a schematic bottom perspective view of the magnetic film of FIG. 3 A;
  • FIGS. 4A-4C are plots of height profiles for major surfaces of magnetic films
  • FIGS. 5A-5C are plots of Fourier transforms of the height profiles of FIGS. 4A-4C, respectively;
  • FIGS. 6A-6B are schematic cross-sectional and top views of a magnetic film
  • FIG. 6C is a schematic cross-sectional view of a magnetic film
  • FIGS. 7A-7B are schematic top and bottom views of a magnetic film
  • FIGS. 8A-8B are a schematic top and bottom views of a magnetic island
  • FIG. 9 is a schematic cross-sectional view of an electromagnetic interference suppression film
  • FIG. 10 is a schematic top view of a magnetic film including a stress relief pattern
  • FIGS. 11A-11B are schematic top views of magnetic films including magnetic islands separated from each other by a network of interconnected gaps
  • FIGS. 12A-12B are schematic cross-sectional views of electromagnetic interference suppression films
  • FIG. 13 is a schematic perspective view of a sintered ceramic boule and a wire saw; and FIG. 14 is a schematic perspective view of a diamond wire.
  • Wireless power charging may be used to recharge mobile hand-held products, for example. Increased charging speed may be desired in some cases. This speed can be increased by increasing the power transferred. Regardless of the power, it is desired that the magnetic field generated in the receiver coil efficiently induces a current in the coil in order to provide efficient power transfer.
  • Typical constructions of consumer electronic devices such as mobile hand-held devices place the antenna and coils against the battery on the non-display side of the device.
  • this placement can greatly reduce the electromagnetic interference of the antenna and coils on the integrated circuits and display electronics, this placement can also result in an induction of eddy currents in the battery, leading to a response electromagnetic field with opposing direction to the fields in the antenna and coils. It has been found that this response electromagnetic field generated at the battery can be substantially reduced or eliminated by placing a thin layer of magnetic material with large permeability and low losses at the desired operating frequencies between the antenna or coil and the battery. In order to increase the power transferred into the receiving coil using the same magnetic material, the material thickness may be increased until no or substantially no response electromagnetic field is created in the battery. However, by varying the magnetic material composition and/or density, it has been found that it is possible to increase the saturation magnetization while maintaining the same thickness or even using a thinner material.
  • a relatively thick (e.g., about 200 microns or thicker) magnetic film can be used in the transmitter.
  • the magnetic films may or may not be flexible films.
  • a 300 micron thick film can be a relatively stiff sheet.
  • a relatively inflexible magnetic film can become a relatively flexible magnetic film upon cracking the film.
  • Useful materials for the magnetic film include manganese zinc ferrite (MnZn- ferrite) materials. Preferred formulations of MnZn-ferrite materials are described further elsewhere herein.
  • a method can include providing a sintered ceramic boule composed of a desired magnetic material and slicing substantially laterally through the sintered ceramic boule using a wire saw (e.g., a diamond wire saw) to provide an uncracked magnetic film.
  • the resulting film may have one or more regular patterns of substantially parallel grooves (e.g., parallel to within 30 degrees, or within 20 degrees, or within 10 degrees, or sufficiently close to parallel that the substantially parallel grooves do not intersect one another) formed in one or both major surfaces of the film as a result of the slicing process.
  • open cavities may be formed in one or both major surfaces as a result of slicing a film from a boule having a porous microstructure.
  • the method further includes intentionally cracking the uncracked film to provide a magnetic film including a plurality of magnetic islands separated from each other by a network of interconnected gaps. It may be desired to intentionally crack the film in a controlled way by imparting a stress-relief pattern to the film prior to cracking the film. This controlled cracking allows reproducible magnetic properties to be obtained, increases the flexibility of the film, and reduces the frangibility of the film.
  • Some magnetic properties may be reduced (e.g., the permeability may drop by about 20%) as a result of the cracking, but this is often offset by the improvement in the reproducibility of the magnetic properties.
  • a Figure of Merit (FoM) characterizing the effectiveness of the magnetic film in a wireless charging system may remain about the same or even increase when the films are cracked, as described further elsewhere herein.
  • a stress-relief pattern is applied to a sintered part and no stress-relief pattern is applied to the corresponding green ceramic part.
  • a magnetic film is formed from an electrically insulative polyoxide material.
  • the magnetic film can be used in a variety of applications such as in electronic devices where magnetic shielding is desired. Magnetic shielding applications include the wireless power applications described elsewhere and may include any other application where it is desired to shield an electronic or other component from a magnetic field.
  • Useful polyoxide materials include ferrites. Ferrites include oxides of iron and at least one other metal. Examples of useful ferrites include soft cubic ferrite materials, such as MnZn-ferrites.
  • an electrically insulative poly oxide single-layer magnetic film contains iron and manganese. In some such embodiments, the electrically insulative polyoxide single-layer magnetic film contains zinc.
  • the magnetic film further includes one or more of silicon, calcium, titanium, tin, cobalt, niobium, tantalum, vanadium, molybdenum, zirconium, or bismuth.
  • an MnZn-ferrite having a larger Zn/Fe ratio and/or a smaller Mn/Fe ratio than traditional MnZn-ferrites is used in the magnetic film.
  • the iron content of magnetic film is in a range from about 48 to about 51 weight percent.
  • the manganese content of the magnetic film is in a range from about 10 to about 20 weight percent.
  • the zinc content of the magnetic film is in a range from about 3 to about 13.5 weight percent.
  • the iron content of the magnetic film is at least 48 weight percent, the manganese content of the magnetic film is at least 10 weight percent, and the zinc content of the magnetic film is at least 3 weight percent.
  • an atomic concentration of the zinc (number of zinc atoms per unit volume) in the magnetic film is Cl
  • an atomic concentration of the iron in the magnetic film is C2
  • C1/C2 is between about 0.06 and about 0.12, or between about 0.07 and about 0.12, or between about 0.08 and about 0.12.
  • an atomic concentration of the manganese in the magnetic film is C3
  • an atomic concentration of the iron in the magnetic film is C2
  • C3/C2 is between about 0.3 and about 0.5, or between about 0.3 and about 0.45, or between about 0.3 and about 0.4.
  • the magnetic film typically has a high relative permeability.
  • a magnetic film has a relative permeability of greater than about 50, or greater than about 100, or greater than about 200, or greater than about 300, or greater than about 500, or greater than about 600, or greater than about 700.
  • the relative permeability refers to the real part of the complex relative permeability, unless indicated differently, evaluated at low frequencies (e.g., about 1 kHz or less) or evaluated statically (direct current), unless indicated differently, and determined at 23 °C, unless indicated differently.
  • An electrically insulative material has a resistivity much greater than that of an electrical conductor such as copper which has a resistivity of approximately 2 x 10 8 ohm-m.
  • an electrically insulative material may have a resistivity of about 10 milliohm-m or greater.
  • the resistivity can be determined at a specified frequency or in a specified frequency range (e.g., a frequency greater than about 5 MHz) or as a direct current (DC) resistivity, and can be determined at a specified temperature or in a temperature range (e.g., at a temperature less than about 100 °C or at room temperature which can be taken to be 23 °C, for example).
  • a magnetic film, or other material may be described as electrically insulative if it has a DC resistivity greater than about 10 milliohm-m at a temperature less than about 100 °C (e.g., for at least one temperature between -20 °C and 100 °C) or if it has a room temperature resistivity greater than about 1 milliohm-m at a frequency greater than about 5 MHz (e.g., for at least one frequency between 5 MHz and 100 MHz).
  • an MnZn-ferrite that has some small electrical conductivity due to electron hopping but that has a DC resistivity greater than about 10 milliohm-m at a temperature less than about 100 °C or that has a room temperature resistivity greater than about 1 milliohm-m at a frequency greater than about 5 MHz will be considered to be electrically insulative. In some embodiments, one or both of these resistivity conditions are satisfied. In some embodiments, an electrically insulative polyoxide single-layer magnetic film has a DC resistivity greater than about 10 milliohm-m, or greater than about 100 milliohm-m, or greater than about 1 ohm-m at a temperature less than about 100 °C (e.g., at room temperature).
  • an electrically insulative polyoxide single-layer magnetic fdm has a room temperature resistivity greater than about 10 milliohm-m, or greater than about 100 milliohm-m at a frequency greater than about 5 MHz (e.g., at a frequency of about 10 MHz).
  • FIG. 1A is a schematic top view of a magnetic fdm 500 which may be an electrically insulative polyoxide single-layer magnetic fdm and/or may be a single-layer manganese zinc ferrite.
  • the magnetic fdm 500 has opposing major first and second surfaces 110 and 120.
  • at least one of the major first and second surfaces 110 and 120 includes a first regular pattern 131 of substantially parallel first grooves 130 formed therein.
  • the grooves 130 extend along the y-direction, are arranged along the x-direction, and penetrate into the magnetic fdm 500 along the z-direction.
  • FIG IB is a schematic bottom view of the magnetic fdm 500.
  • each of the first and second surfaces 110 and 120 include a first regular pattern 131 of substantially parallel first grooves 130 formed therein.
  • the first regular pattern 131 of the first surface 110 may be the same or different from the first regular pattern 131 of the second surface 120.
  • the first grooves 130 are schematically represented as lines in FIGS. 1A-1B, the first grooves 130 may have a width generally on the order of the first pitch PI (e.g., the full width at half-depth of the first grooves 130 may be about equal to a half or a quarter of the first pitch PI).
  • one but not the other of the first and second surfaces 110 and 120 include a first regular pattern 131 of substantially parallel first grooves 130 formed therein. FIG.
  • 1C is a schematic bottom view of a magnetic fdm 500b which corresponds to magnetic fdm 500 except that the second surface 120b of magnetic fdm 500b does not include a first regular pattern 131 of substantially parallel first grooves 130 formed therein.
  • the magnetic films 500 and 500b may be formed by slicing the films from a boule, for example, as described further elsewhere herein.
  • a magnetic fdm sliced from an end of the boule may have one major surface with a first regular pattern of substantially parallel first groves and an opposite major surface that does not include a first regular pattern of substantially parallel first groves.
  • a magnetic fdm sliced from an interior of the boule may have opposing major surfaces, each including a first regular pattern of substantially parallel first groves.
  • FIG. 2 is a schematic plot of a height profile in a cross-section perpendicular to the first regular pattern 131 (along the x-direction) schematically illustrated in FIG. 1A.
  • the first regular pattern 131 has a first pitch PI (which may be the same or different for the first and second surfaces 110 and 120), the first grooves have an average full width at half depth W (which may be the same or different for the first and second surfaces 110 and 120), and W/Pl > 0.1.
  • PI is less than about 1.8 mm, or less than about 1.5 mm, or less than about 1 mm, or less than about 0.8 mm.
  • the first grooves 130 have an average depth dl which may be less than about 2 microns.
  • the average depth dl may be the same or different for the first and second major surface.
  • one or both of the first and second surfaces 110 and 120 include additional patterns not shown in FIGS. 1A-1B and not shown in FIG. 2.
  • one or both of the first and second surfaces 110 and 120 may include a second regular pattern of grooves having a pitch different than PI .
  • FIG. 3 A is a schematic top perspective view of a magnetic film 100 which may correspond to magnetic film 500 except that in addition to including a first regular pattern 31 of substantially parallel first grooves 30, the at least one of the major first and second surfaces 10 and 20 of magnetic film 100 further includes a second regular pattern 41 of substantially parallel second grooves 40 formed therein.
  • the second regular pattern 41 has a second pitch P2 different than PI.
  • P2 is less than PI.
  • the second grooves 40 are substantially parallel (e.g., parallel to within 30 degrees, or within 20 degrees, or within 10 degrees, or sufficiently close to parallel that the substantially parallel grooves do not intersect one another) to the first grooves 30.
  • FIG. 3B is a schematic bottom perspective view of the magnetic film 100.
  • each of the first and second surfaces 10 and 20 include a first regular pattern 31 of substantially parallel first grooves 30 formed therein, where the first regular pattern 31 of each of the first and second surfaces 10 and 20 have a first pitch PI, the first grooves 30 of each of the first and second surfaces 10 and 20 have an average full width at half-depth W, and for each of the first and second surfaces 10 and 20, W/Pl > 0.1.
  • the first pitch PI and the depth W for the first and second surfaces 10 and 20 may be the same or may be different.
  • each of the first and second surfaces 10 and 20 further includes a second regular pattern 41 of substantially parallel second grooves 40 formed therein, where the second regular pattern 41 of each of the first and second surfaces 10 and 20 have a second pitch P2 less than PI.
  • the second pitch P2 for the first and second surfaces 10 and 20 may be the same or may be different.
  • the first pattern 31 and in some embodiments the second pattern 41 may be generated from slicing the film from a boule using a cutting wire (e.g., using diamond wire saw).
  • the process conditions used in cutting the boule include the linear speed of the cutting wire (speed of the back and forth motion of the wire), the feed speed through the boule (speed that the cut into the boule advances through the boule), and whether and to what degree a rocking motion is applied during the cutting.
  • the linear speed may be 10 to 50 m/s, for example, and the feed speed may be 0.2 to 5 mm/min, for example.
  • Diamond wire saws may be configured to provide a rocking motion during cutting.
  • the rocking motion can be characterized in terms of a rocking angle which may be 0 to 12 degrees (e.g., about 2 degrees which corresponds to a rocking motion over ⁇ 2 degrees), for example. It has been found according to some embodiments that including rocking results in the second pattern being produced.
  • one of the major first and second surfaces 10 and 20 does not include the second pattern 41 and/or does not include the first pattern 31.
  • the major second surface 20 may appear as major second surface 120b, in some embodiments.
  • the magnetic film 100 or 500 or 500b for example, has an average thickness t greater than about 100 microns, or greater than about 200 microns, or greater than about 300 microns. In some embodiments, the average thickness t is less than about 1000 microns. In some embodiments, a ratio of a largest lateral dimension dmax of the major first and second surface to the average thickness t is greater than about 300, or greater than about 500, or greater than about 700, or greater than about 1000, or greater than 2000.
  • FIG. 4A is a plot of a height profile for a major surface of an electrically insulative polyoxide single-layer magnetic film having first (larger pitch) and second (smaller pitch) patterns of substantially parallel respective first and second groves in a cross-section substantially perpendicular to the first and second regular patterns.
  • the first grooves have an average full width at half-depth W and an average depth dl.
  • the second grooves appear as substantially periodic variations in the height profile superimposed on the variations due to the first grooves. The determination of W and dl is described further in the Examples.
  • FIG. 4B is a plot of a height profile for a major surface of another electrically insulative polyoxide single-layer magnetic film having a first pattern of substantially parallel first groves.
  • FIG. 4C is a plot of a height profile for a major surface of a tape-cast manganese zinc ferrite film which was patterned in the green state.
  • pattern lines visible which are much narrower than the first grooves of FIGS. 4A and 4B. Such pattern lines can be formed by scoring, for example.
  • the magnetic films of FIGS. 4A-4C are described further in the Examples.
  • FIG. 5 A is a plot of the Fourier transform of the height profile of FIG. 4A showing first and second peaks K1 and K2 corresponding to the pitch PI of the first pattern and the pitch P2 of the second pattern, respectively.
  • the first peak K1 has a spatial frequency FI which is approximately 1/P 1 and the second peak K2 has a spatial frequency F2 which is approximately 1/P2.
  • FIG. 5B is a plot of the Fourier transform of the height profile of FIG. 4B showing a first peak K1 at a spatial frequency FI corresponding to the pitch PI of the first pattern.
  • the other peaks in FIG. 5B are much smaller than the first peak K1 indicating a lack of strong periodicity of the additional structure of FIG.
  • FIG. 5C is a plot of the Fourier transform of the height profile of FIG. 4C.
  • a first peak K1 at a spatial frequency which corresponds to the narrow grooves of FIG. 4C is indicated.
  • the Fourier transforms shown in FIGS. 5A-5C were calculated along a direction transverse to the grooves of the respective surfaces.
  • a single-layer manganese zinc ferrite (e.g., 100 or 500 or 500b) has an average thickness t greater than about 100 microns and opposing major first and second surfaces, where at least one of the first and second surfaces of the single-layer manganese zinc ferrite includes a first regular pattern (e.g., 31 or 131) of substantially parallel first grooves formed therein.
  • a Fourier transform of the first regular pattern has a peak at a first spatial frequency FI, the first grooves have an average full width at half-depth W, and W*F1 >
  • a grid of pattern lines (e.g., from scoring in a green state) in a tape-cast film includes narrow grooves having W*F1 much less than less than 0.1.
  • Comparative Example CE1 described elsewhere herein had an W*F1 of about 0.004.
  • a surface having a surface structure with sinusoidal variations would have W*F1 of 0.5.
  • W*F1 is less than about 0.6, or less than about 0.5, or less than about 0.4.
  • a Fourier transform of the second regular pattern has a peak at a second spatial frequency F2 greater than F 1. For example, FIG.
  • FIG. 5 A is a Fourier transform of the height profile of FIG. 4A along a direction substantially orthogonal to the first and second grooves and therefore contains Fourier transforms of the first and second regular patterns which have respective first and second spatial frequencies F 1 and F2 with F2 > F 1.
  • one or both of the major surfaces of a magnetic film are characterized by one or more of an average surface roughness Sa (average of the absolute value of the difference in height of a surface and the mean height of the surface), an rms surface roughness Sq (square root of the average of the squared difference in height of a surface and the mean height of the surface), a skew Ssk (Sq 3 times average of the cubed difference in height of a surface and the mean height of the surface), and/or a kurtosis Sku (Sq -4 times average of the difference raised to the fourth power between the height of a surface and the mean height of the surface).
  • Sa average surface roughness
  • Sq square root of the average of the squared difference in height of a surface and the mean height of the surface
  • a skew Ssk Sq 3 times average of the cubed difference in height of a surface and the mean height of the surface
  • a kurtosis Sku Sq -4 times average of the difference raised to the fourth power between the height
  • At least one of the first and second surfaces has an average surface roughness Sa greater than about 100 nm, or greater than about 200 nm, or greater than about 250 nm. In some embodiments, 100 nm ⁇ Sa ⁇ 500 nm. In some embodiments, each of the first and second surfaces has an average surface roughness Sa greater than about 100 nm or in any of the ranges of Sa described elsewhere herein. In some embodiments, at least one of the first and second surfaces has an rms surface roughness Sq greater than about 200 nm, or greater than about 300 nm, or greater than about 600 nm. In some embodiments, at least one of the first and second surfaces has a surface roughness with a negative skew Ssk.
  • At least one of the first and second surfaces has a surface roughness with a kurtosis Sku > 15, or Sku > 20, Sku > 24, or Sku > 25, or Sku > 26, or Sku > 27.
  • the magnetic film further includes a plurality of open cavities formed in at least one of the major first and second surfaces of the magnetic film.
  • the cavities may have a lateral length scale small compared to the pitch PI of the first pattern.
  • the cavities may have open tops having equivalent diameters (diameter of circle having same area as the open top) in a range of about 1 micron to about 10 microns and the pitch PI may be in a range of about 100 microns to about 1 mm.
  • FIGS. 6A-6B are schematic cross-sectional and top views, respectively, of a magnetic film 600 having opposing major first 610 and second 620 surfaces.
  • Magnetic film 600 may be as described for magnetic film 100 or 500 or 500b except that the first surface 610 (which may correspond to either of the first or second surfaces of the magnetic film 100 or 500 or 500b) further includes a plurality of open cavities 650 formed therein.
  • the second surface 620 also includes a plurality of open cavities formed therein. This is schematically illustrated in FIG.
  • FIG. 6C which is a schematic cross-sectional view of a magnetic film 600b having opposing major first and second surfaces 610b and 620b where the first surface 610b includes a plurality of open cavities 650a formed therein and the second surface 620b includes a plurality of open cavities 650b formed therein.
  • the magnetic film 600b may be as described for the magnetic film 600 except that the second surface also includes a plurality of open cavities formed therein.
  • At least one of the first and second surfaces 610 and 620 includes a first regular pattern of substantially parallel first grooves as described further elsewhere herein.
  • the first surface 610 includes substantially parallel grooves 633.
  • the at least one of the first and second surfaces 610 and 620 which includes a first regular pattern of substantially parallel first grooves further includes a plurality of open cavities 650 formed therein, where each open cavity 650 includes a closed bottom 651 and an open top 652 at the at least one of the first and second surfaces 610 and 620 and has a depth dc greater than about 1000 nm.
  • the open tops 652 of the open cavities 650 have a total area A 1 , the at least one of the first and second surfaces 610 and 620 has a total area A2, and A1/A2 > 0.001, or A1/A2 > 0.01, or A1/A2 > 0.1. In some embodiments, A1/A2 ⁇ 0.4, or A1/A2 ⁇ 0.3, or A1/A2 ⁇ 0.2. In some embodiments, the open tops 652 of the open cavities 650 have an average area greater than about 2 micron squared, or greater than about 3 micron squared, or greater than about 4 micron squared, or greater than about 5 micron squared. In some embodiments, the open tops 652 of the open cavities 650 have an average equivalent diameter greater than about 1 micron. Averages refer to unweighted means, unless indicated differently.
  • FIG. 7A and 7B are schematic top and bottom views of a magnetic fdm 300 including a plurality of magnetic islands 310 separated from each other by a network of interconnected gaps 320.
  • each magnetic island 310 includes iron and manganese and a major first surface 330 including a regular pattern 351 of substantially parallel grooves 350 formed therein.
  • the pattern 351 has a pitch P3, the grooves have an average full width at half-depth W3, and W3/P3 > 0.1, or W3/P3 > 0.2, or W3/P3 > 0.4, or W3/P3 > 0.4.
  • the magnetic film 300 includes a major second surface 340 opposite the major first surface 330, the major second surface 340 including a regular pattern 361 of substantially parallel grooves 360 formed therein, the pattern 361 having a pitch P4, the grooves having an average full width at half-depth W4, W4/P4 > 0.1.
  • magnetic film 300 may be formed by deliberately cracking any of the magnetic films described elsewhere herein and P3 and/or P4 may independently correspond to the PI of FIG. 1A or IB or 3A or 3B and W3 and/or W4 may independently correspond to W of FIG. 2 or 4, after the film has been cracked.
  • P3 and P4 may be the same or different.
  • W3 and W4 may be the same or different.
  • the magnetic islands 310 may have a largest lateral dimension in a range of 1 mm to 8 mm, or 1.5 mm to 7 mm, or 2 mm to 6 mm, for example.
  • the gaps 320 may be partially (less than 50%), substantially (more than 50%), or even completely (100%) filled with a material that is different from the material of the magnetic islands 310.
  • the gaps may contain an electrically nonconductive material, and/or a non-magnetic material.
  • the material in the gaps may include an oxide and/or an adhesive, for example.
  • the gaps 320 may be empty or filled with air.
  • FIG. 8A is a schematic top view of a magnetic island 510 having a major surface 535 (e.g., corresponding to a major surface of one of the magnetic islands 310 that provides a portion of one of the major first or second surfaces 330 and 340) including first and second regular patterns 531 and 541 of substantially parallel first 530 and second grooves 540 formed therein and arranged at respective pitches PI and P2.
  • the first and second regular patterns 531 and 541 of substantially parallel first 530 and second grooves 540 may extend continuously or substantially continuously across the major first or second surface of a magnetic film containing the major surface 535.
  • the magnetic island 510 has an opposing major surface (e.g., corresponding to a major surface of one of the magnetic islands 310 that provides a portion of the other of the major first or second surfaces 330 and 340) which also includes first and second regular patterns 531 and 541 of substantially parallel first 530 and second grooves 540 formed therein and arranged at respective pitches PI and P2.
  • FIG. 8B which a schematic bottom view of the magnetic island 510 having a major surface 537, according to some embodiments.
  • the pitches PI and P2 for the major surface 537 may be the same or different from the pitches PI and PI for the major surface 535.
  • the major surface 537 does not include the first and second patterns 531 and 541, or includes the first pattern 531 and not the second pattern 541, for example.
  • an electrically insulative poly oxide single-layer magnetic film 300 includes a plurality of magnetic islands 310 or 510 separated from each other by a network of interconnected gaps 320, where each magnetic island 310 or 510 includes iron and manganese and has a major first surface (e.g., 535 or portion of 340) including first and second regular patterns 31 and 41, or 531 and 541, of substantially parallel first 30 or 530 and second grooves 40 or 540 formed therein and arranged at respective pitches PI and P2, where P2 is different from PI.
  • each magnetic island 310 or 510 has a major second surface (e.g., 537 or portion of 340) including first and second regular patterns 31 and 41, or 531 and 541, of substantially parallel first 30 or 530 and second grooves 40 or 540 formed therein and arranged at respective pitches PI and P2, where P2 is different from PI.
  • FIG. 9 is a schematic cross-sectional view of an electromagnetic interference suppression film 200 including a plurality of stacked electrically insulative polyoxide single-layer magnetic films 300.
  • at least two adjacent electrically insulative polyoxide single layer magnetic films are bonded to each other via an adhesive layer 400.
  • Each magnetic film 300 can be made as described elsewhere herein, and then the magnetic films 300 can be laminated together to provide the electromagnetic interference suppression film 200.
  • a plurality of stacked magnetic films 300 may be used to provide increased magnetic shielding compared to a single magnetic film 300 in some applications.
  • Adhesive layers may also be included at outermost surface(s) of the plurality of stacked electrically insulative polyoxide single-layer magnetic films 300.
  • the film 200 is bonded to substrate(s) (e.g., polymeric film
  • a magnetic film is intentionally cracked to form a plurality of magnetic islands separated from each other by a network of interconnected gaps.
  • a stress relief pattern is imparted to the magnetic film.
  • the magnetic film may be scored in the pattern schematically illustrated in FIG. 10 which is a schematic top view of a magnetic film including score lines 1003.
  • the score lines 1003 can be formed by pressing a sharp blade into the fdm, for example, or by cutting into the magnetic film using a laser, for example.
  • the score lines 1003 can define a square, rectangular, or triangular pattern, for example.
  • the magnetic film is laminated to a substrate (e.g., a polymeric film), a stress-relief pattern is applied to the magnetic film, and then the magnetic film is cracked in a pattern determined by the stress-relief pattern (e.g., along score lines).
  • the magnetic film can be cracked by flexing the film using roller(s), for example.
  • a laser is used to cut score lines into the magnetic film. In some embodiments, the laser cuts through the magnetic film so that no additional cracking step is needed.
  • FIG. 11A is a schematic top view of a magnetic film 1100a including a two-dimensional regular array of magnetic islands 1110a separated from each other by a network of interconnected gaps 1120a.
  • the magnetic film 1100a may result from cracking the scored magnetic film 1000, for example.
  • a stress-relief pattern may generally guide the pattern of cracking of the magnetic film but there may be some irregularity in the resulting pattern of cracking.
  • 1 IB is a schematic top view of a magnetic film 1100b including magnetic islands 1110b separated from each other by a network of interconnected gaps 1120b.
  • the magnetic film 1100b may result from cracking a magnetic film similar to magnetic film 1000 having a stress-relief patter generally along a square grid, for example.
  • FIG. 12A is a schematic cross-sectional view of an electromagnetic interference suppression film 1200a including an electrically insulative polyoxide single-layer magnetic film 1500 bonded to a substrate 1450 via an adhesive layer 1400.
  • the magnetic film 1500 includes a plurality of magnetic islands 1210 separated from each other by a network of interconnected gaps 1220.
  • the magnetic film 1500 may correspond to any magnetic film described elsewhere herein after the film has been cracked as described elsewhere herein.
  • Substrate 1450 may be a polymeric substrate. Suitable polymeric substrates include polymeric films such as a polyethylene terephthalate (PET) films, for example.
  • PET polyethylene terephthalate
  • the polymeric substrate may have a thickness of about 60 to about 125 microns, for example. In some embodiments, as schematically illustrated in FIG.
  • an electromagnetic interference suppression film 1200b including the electrically insulative polyoxide single-layer magnetic film 1500 bonded to the substrate 1450 via the adhesive layer 1400 further includes a second substrate 1452 bonded to the magnetic film 1500 opposite the substrate 1450 via a second adhesive layer 1402.
  • the second substrate 1452 is bonded to the magnetic film 1500 after applying a stress relief pattern to the magnetic film 1500 and prior to intentionally cracking the magnetic film 1500 to provide the magnetic islands 1210.
  • the second substrate 1452 is bonded to the magnetic film 1500 after intentionally cracking the magnetic film 1500 to provide the magnetic islands 1210.
  • Any of the adhesive layers (e.g., adhesive layer 400, 1400, and/or 1402) may be pressure sensitive adhesive layers and/or may have a thickness of about 2 microns to about 125 microns, for example.
  • a method of making a magnetic fdm includes providing a sintered ceramic boule; slicing through the sintered ceramic boule using a wire saw to provide an uncracked fdm; and intentionally cracking the uncracked fdm to provide the magnetic fdm, such that the magnetic fdm includes a plurality of magnetic islands separated from each other by a network of interconnected gaps.
  • FIG. 13 is a schematic perspective view of sintered ceramic boule 1310 and a wire saw 1394 including cutting wires 1395.
  • the wire saw 1394 includes a plurality of spaced apart cutting wires 1395 so that multiple magnetic fdms can be cut from the boule 1310 in a single step.
  • the wire saw 1394 includes a single wire 1395 and magnetic fdms are cut from the boule 1310 one by one.
  • the boule 1310 extends along an axis of the boule 1310 such that the boule 1310 has a constant or substantially constant cross-section orthogonal to the axis, and the wires 1395 slice through the boule 1310 along a direction substantially perpendicular (e.g., within 30 degrees, or 20 degrees, or 10 degrees of perpendicular) to this axis. In some embodiments, the wires 1395 slice through the boule such that the resulting magnetic fdm(s) has a substantially constant thickness.
  • the boule is formed from a polyoxide containing iron and manganese.
  • the polyoxide further contains zinc.
  • the boule may be formed from a manganese zinc ferrite such as those described further elsewhere herein.
  • the step of providing the sintered ceramic boule includes: providing raw materials, where the raw materials include oxides of iron, manganese, and zinc; blending the raw materials; forming a green part from the blended raw materials; and sintering the green part to form the sintered ceramic boule.
  • Methods of forming a green part and sintering the green part to form a sintered ceramic are known in the ceramics art and are applicable to making the sintered ceramic boule.
  • the raw materials that are blended is selected from the following table:
  • the raw materials are ground to form a power which, in some embodiments, is pressed into a mold, heated to form a part, then milled to form another powder. In some embodiments, the ground powder or the milled powder is pressed to form the green part. The green part is then sintered.
  • Conventional maximum sintering temperatures are often greater than 1300 °C. In some embodiments, a maximum sintering temperature during the sintering step is in a range of 1300 °C to 1400 °C. In some embodiments, the sintering is carried out such that a maximum sintering temperature is lower than conventionally used with manganese zinc ferrites.
  • a maximum sintering temperature during the sintering step is in a range of 1200 °C to 1300 °C, or 1240 °C to 1280 °C. This can result in a lower density boule which can have a higher porosity, and this can lead to more or larger open cavities in the films cut from the boule.
  • the lower density boule may also have a smaller grain size (e.g., 5-7 microns) as determined by x- ray diffraction than the higher density boule (e.g., grain size of about 12 microns).
  • the green part can optionally be shaped and/or burned out prior to sintering.
  • the sintered part can optionally be shaped prior to slicing with the wire saw.
  • a stress-relief pattern is applied to the uncracked film.
  • the network of interconnected gaps is defined by the stress-relief pattern.
  • the uncracked film is laminated to a first substrate.
  • the stress-relief pattern is applied to the uncracked film after it has been laminated to the first substrate.
  • the uncracked film is laminated to a second substrate opposite the first substrate.
  • the magnetic film is laminated to a second substrate opposite the first substrate.
  • the wire saw 1394 is a diamond wire saw.
  • the wires 1395 may be diamond wires.
  • Diamond cutting wires can include a wire impregnated with diamond dust and have been used for slicing ceramics, for example.
  • FIG. 14 is a schematic illustration of a diamond wire 1495 including diamond particles 1497. Suitable diamond wire saws include those available from Crystal Systems Innovations (Salem, MA), and those available from Meyer Burger (Thun, Switzerland), such as the RTD series or the DW200 series, for example.
  • “about” will be understood to mean within 10 percent of the specified value.
  • a quantity given as about a specified value may be within 5% of the specified value and can be precisely the specified value.
  • a quantity having a value of about 1 means that the quantity has a value between 0.9 and 1.1, and that the value could be 1.
  • Sintered MnZn-ferrite boules were made having dimensions of about 30 mm x 200 mm x 200 mm.
  • Magnetic films having lateral dimensions of 200 mm x 200 mm and thicknesses of about 300 microns (Example 1) and about 250 microns (Example 2) were sliced from the boules using diamond wire saws.
  • Example 1 was cut with a RTD-6800 diamond wire cutting machine using a feed rate of 0.77 mm/min and a 140 micron diamond wire from Diamond Wire Material
  • Example 2 was cut with a Meyer Burger DW288S4 diamond wire cutting machine using a feed speed of 1 mm/min and a 120 micron diamond wire from DMT and with a rocking angle of 2 degrees.
  • the compositions of the boules were similar to the composition of the higher density sample of Example 4.
  • the surface structures of the magnetic films were analyzed.
  • a tape-cast MnZn-ferrite film that had been patterned with a grid of 2 mm x 2 mm lines was also analyzed (Comparative Example CE1).
  • Topographic maps of the magnetic films were obtained with a Dektak 8 stylus profilometer, available from Bruker Inc (Tuscon, AZ), using a 2.5 micron radius tip with 2mg force. Each map was over a 10mm x 10mm sample area and utilized 407 line scans with 6000 pts per line.
  • the height profile for Example 1 is shown in FIG. 4B
  • the height profile for Example 2 is shown in FIG. 4A
  • the height profile for Comparative Example CE1 is shown in FIG. 4C.
  • Comparative Example CE1 was processed with“global bow removal”, and then rotated -1.9 degrees and cropped so that the grid structure in the sample was aligned horizontally and vertically.
  • Fourier transforms of the samples were obtained using Analyze/FFT PSD analysis/Average X-Fourier X 8 (or Average Y-Fourier X 8).
  • Fourier filtering for roughness analysis was performed using General/Filtering/Roughness Filters/ISO 16610-61 L-Filter 0.1mm. Profile measurements were performed using tools under General/Cross Section Profile.
  • the resulting topographic maps were used to determine the widths of the periodic structures, measured at their half-depths (the height which is half-way between the highest local region and the bottom of the feature).
  • the full widths at half-depths were determined as follows. Referring to FIG. 4A, points 498 and 499 are the highest points on either side of the groove 497 (before reaching another feature), the point 496 indicates the bottom of the groove 497.
  • the points 494 and 495 indicate positions halfway between each maximum 498 and 499, respectively, and the bottom 496.
  • the lateral distance between the points 494 and 495 is the groove full width at half-depth W.
  • the pit analysis determined minimum, maximum, mean, standard deviation, median, and 95 th percentile values of the size and aspect ratio of the open tops of the pits (cavities).
  • the size was determined as an area of the open tops of the cavities and as an equivalent diameter (p/4 times the square of the equivalent diameter is the area).
  • the results of the pit analysis for Example 1 are provided in the following table:
  • FoM the resistance and self inductance of transmission and receiving coils were measured in addition to the mutual inductance between the coils.
  • Example 2 Multiple sheets of manganese zinc ferrite were prepared as in Example 2 and measured at low power (milliwatt levels) at 325kHz to determine the FoM.
  • The‘original’ sample was an unscored, uncracked sheet.
  • the 3 mm, 5 mm and 10 mm samples were laminated with an acrylate adhesive onto one side to a PET substrate, then were scored in square lattice designs with 3 mm x 3 mm, 5 mm x 5 mm and 10 mm x 10 mm squares, respectively, and finally were broken along these score lines.
  • the resulting FoM for the samples is provided in the following table:
  • MnZn-ferrite films were prepared as generally described in Example 2 and analyzed by x- ray photoelectron spectroscopy (XPS), x-ray fluorescence spectroscopy (XRF) and Inductively Coupled Plasma spectroscopy (ICP). ICP provides a bulk description of the material composition.
  • XRF analyzes about the first 10 microns of the exterior of the sample, while XPS analyzes up to around 1 micron from the exterior.
  • a reference tape-cast sample was analyzed, and lower and higher density samples of MnZn-ferrite formulations that included 48 to 51 wt.% iron, 10 to 20 wt.% manganese, and 3 to 13.5 wt.% zinc were analyzed.
  • the maximum sintering temperature was lower for the lower density sample (about 1240 °C to 1280 °C) than for the higher density sample (about 1320 °C).
  • the resulting atomic concentration ratios are reported in the following table:

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Abstract

L'invention concerne un film magnétique monocouche de polyoxyde électriquement isolant comprenant du fer, du manganèse et du zinc. Le film magnétique à couche unique de polyoxyde électriquement isolant a une épaisseur moyenne supérieure à environ 100 microns et des première et seconde surfaces principales opposées. La première et/ou la seconde surface présente un premier motif régulier de premières rainures sensiblement parallèles formées dans celui-ci. Le premier motif régulier comprend un premier pas P1, les premières rainures ont une largeur totale moyenne à mi-profondeur W, et W/Pl > 0,1.
PCT/IB2019/060941 2018-12-20 2019-12-17 Film magnétique WO2020128847A1 (fr)

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EP1968079A2 (fr) * 2007-03-07 2008-09-10 Toda Kogyo Corporation Feuille de ferrite moulée, substrat de ferrite fritté et module d'antenne
EP2058119A2 (fr) * 2007-11-07 2009-05-13 Kitagawa Industries Co., Ltd. Feuille de céramique et son procédé de fabrication
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