WO2020118841A1 - Oled显示装置 - Google Patents

Oled显示装置 Download PDF

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Publication number
WO2020118841A1
WO2020118841A1 PCT/CN2019/071685 CN2019071685W WO2020118841A1 WO 2020118841 A1 WO2020118841 A1 WO 2020118841A1 CN 2019071685 W CN2019071685 W CN 2019071685W WO 2020118841 A1 WO2020118841 A1 WO 2020118841A1
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WIPO (PCT)
Prior art keywords
layer
display device
oled display
gate insulating
hole
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Ceased
Application number
PCT/CN2019/071685
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English (en)
French (fr)
Inventor
蒋谦
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/327,090 priority Critical patent/US11139352B1/en
Publication of WO2020118841A1 publication Critical patent/WO2020118841A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Definitions

  • the present application relates to the field of display technology, in particular to an OLED display device.
  • organic light-emitting diodes In the current display field, organic light-emitting diodes (Organic Light-Emitting Diode, OLED) have broad prospects due to their advantages of high efficiency, simple preparation process, and excellent characteristics.
  • the light emitting material layer in the prior art OLED display device forms a sub-pixel-sized film pattern through a precision metal reticle, and the red light emitting material layer pattern, the green material light emitting layer pattern, and the blue material light emitting layer pattern are juxtaposed deposited pixels Define the concave part of the layer.
  • the pixel-defining layer in the existing OLED display device has a trapezoidal structure, so that the red light, green light and blue light emitted from the light-emitting film pattern layer on the pixel-defining layer are emitted perpendicular to the screen, which results in the limitation of the screen brightness viewing angle and the screen Color shift phenomenon.
  • the light-emitting pixel array on the screen is planar, the light emitted by the light-emitting film pattern layer is perpendicular to the screen, which further leads to screen viewing angle limitation and screen color shift.
  • the light-emitting pixel array on the screen is a planar type, the light emitted by the light-emitting film pattern layer is perpendicular to the screen, which further causes a screen viewing angle limitation and a screen color shift phenomenon.
  • the present application provides an OLED display device that can emit light emitted from a light-emitting film pattern layer in multiple directions to solve the existing OLED display device. Since the light-emitting pixel array on the screen is planar, the light-emitting film pattern layer The emitted light is perpendicular to the screen, which further leads to the technical problem of limited viewing angle of the screen.
  • the present application provides an OLED display device, including: a substrate, a buffer layer, an active layer, a first gate insulating layer, a gate metal layer, a second gate insulating layer, a source-drain metal layer, a passivation layer, and a flat Chemical layer, organic photoresist layer, anode metal layer, pixel defining layer, OLED pixel layer and thin film encapsulation layer;
  • a first through hole is formed on the second gate insulating layer, and the source and drain metal layers communicate with the active layer through the first through hole; the passivation layer and the planarization
  • a second through hole is formed on the layer and exposes the source-drain metal layer, the anode metal layer communicates with the source-drain metal layer through the second through hole;
  • the organic photoresist layer is located on the On the surface of the planarization layer, the organic photoresist layer is provided as a raised structure, the raised structure includes a straight portion and a slope portion, the straight portion is located on the top edge of the raised structure, and the slope portion is located on the The two sides of the raised structure.
  • the raised structure is a single-layer film structure.
  • the raised structure is a double-layer film structure.
  • a columnar protrusion is provided on the surface of the planarization layer, and the columnar protrusion covers the edges of two adjacent organic photoresist layers.
  • the material of the columnar protrusion is the same as the material of the pixel defining layer, and the height of the columnar protrusion is greater than the height of the pixel defining layer.
  • the height of the columnar protrusion is in the range of 1-10 um.
  • the OLED pixel layer includes a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, a metal electrode layer, and an organic
  • the cover layer and the like are not limited to the above-mentioned film layer.
  • the light-emitting layer further includes a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer.
  • the light-emitting layer is a white light-emitting layer
  • a gap is provided on the thin-film encapsulation layer
  • a color filter layer is provided on the gap.
  • the present application also provides an OLED display device, including: a substrate, a buffer layer, an active layer, a first gate insulating layer, a gate metal layer, a second gate insulating layer, a source-drain metal layer, a passivation layer, Flattening layer, organic photoresist layer, anode metal layer, pixel defining layer, OLED pixel layer and thin film encapsulation layer;
  • a first through hole is formed on the second gate insulating layer, and the source and drain metal layers communicate with the active layer through the first through hole; the passivation layer and the planarization
  • a second through hole is formed on the layer and exposes the source-drain metal layer, the anode metal layer communicates with the source-drain metal layer through the second through hole; the organic photoresist layer is located on the On the surface of the planarization layer, the organic photoresist layer is provided as a ridge structure.
  • a columnar protrusion is provided on the surface of the planarization layer, and the columnar protrusion covers the edges of two adjacent organic photoresist layers.
  • the material of the columnar protrusion is the same as the material of the pixel defining layer, and the height of the columnar protrusion is greater than the height of the pixel defining layer.
  • the height of the columnar protrusion is in the range of 1-10 um.
  • the OLED pixel layer includes a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, a metal electrode layer, and an organic
  • the cover layer and the like are not limited to the above-mentioned film layer.
  • the light-emitting layer further includes a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer.
  • the light-emitting layer is a white light-emitting layer
  • a gap is provided on the thin-film encapsulation layer
  • a color filter layer is provided on the gap.
  • the beneficial effect of the present application is that: the OLED display device provided by the present application is provided with an organic photoresist layer with a raised structure on the planarization layer, so that the light emitted from the light-emitting thin film pattern layer above the organic photoresist layer is more Exiting in each direction further makes the exiting light more uniform and further improves the viewing angle of the display screen.
  • FIG. 1 is a schematic structural diagram of an OLED display device of the present application.
  • FIG. 2 is a schematic diagram of a raised structural solution of an organic photoresist layer of an OLED display device of the present application.
  • FIG. 3 is a schematic diagram of a second plan view of a raised structure of an organic photoresist layer of an OLED display device of the present application.
  • FIG. 4 is a partially enlarged schematic diagram of a solution of the OLED display device of the present application.
  • FIG. 5 is a partially enlarged schematic diagram of scheme two of the OLED display device of the present application.
  • FIG. 6 is a partially enlarged schematic view of scheme three of the OLED display device of the present application.
  • This application is directed to the existing OLED display device. Since the light-emitting pixel array on the screen is planar, the light emitted from the light-emitting film pattern layer is perpendicular to the screen, which further leads to the technical problem of the viewing angle limitation of the screen. This embodiment can solve the problem defect.
  • FIG. 1 it is a schematic structural diagram of an OLED display device of the present application.
  • the application provides an OLED display device, including: a substrate 10, a buffer layer 20, an active layer 31, a first gate insulating layer 30, a gate metal layer 41, a second gate insulating layer 40, a source and drain Metal layer 51, passivation layer 50, planarization layer 60, organic photoresist layer 71, anode metal layer 72, pixel defining layer 80, OLED pixel layer 73, and thin film encapsulation layer 90;
  • a first through hole 42 is formed on the second gate insulating layer 40, and the source and drain metal layer 51 communicates with the active layer 31 through the first through hole 42;
  • the passivation layer 50 and a second through hole 52 is formed on the planarization layer 60 and exposes the source-drain metal layer 51, the anode metal layer 72 passes through the second through hole 52 and the source-drain metal layer 51 is connected;
  • the organic photoresist layer 71 is located on the surface of the planarization layer 60, and the organic photoresist layer 71 is provided as a raised structure.
  • the material of the substrate 10 is polyimide or glass; the material of the buffer layer 20 is one or two of silicon nitride or silicon oxide; the material of the first gate insulating layer 30 It is silicon nitride or silicon oxide, and the material of the second gate insulating layer 40 is the same as the material of the first gate insulating layer; the material of the source-drain metal layer 51 is titanium or titanium aluminum alloy; The material of the gate metal layer 41 is molybdenum; the material of the active layer 31 is metal oxide, including indium gallium zinc oxide or indium zinc oxide; the material of the passivation layer 50 is silicon oxide, silicon nitride
  • the composite layer structure formed by any combination of two or more of nitrogen silicon compounds is preferably a SiO/SiNx stack; the planarization layer 60 is an organic photoresist layer.
  • the organic photoresist layer 71 is formed on the surface of the planarization layer 60 by applying a photoresist solution using spin coating or slit coating method, etc. After photoresist coating, it undergoes a certain temperature and time bake Bake, and then use a photomask to expose, develop and dry after exposure to form a pattern with a raised structure.
  • the anode metal layer 72 is laid on the organic photoresist layer 71, so the shape of the organic photoresist layer 71 has a greater influence on the anode metal layer 72, because the OLED pixel layer 73 is located
  • the surface of the anode metal layer 72, so the shape of the organic photoresist layer 71 further affects the pixel array of the OLED pixel layer 73;
  • the anode metal layer 72 is made of indium tin oxide by physical vapor deposition (PVD) method Three-layer structure of film/metal film/indium tin oxide film.
  • a photoresist layer is coated on the anode metal layer 72, subjected to exposure, photoresist development, and metal electrode layer etching again, and then the residual photoresist layer is peeled off to form the OLED pixel layer 73.
  • the OLED pixel layer 73 includes a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, a metal electrode layer, an organic cover layer, etc., and is not limited to the above film layers .
  • the pixel defining layer 80 is located at both ends of the edges of the anode metal layer 72 and the OLED pixel layer 73, and the height of the pixel defining layer 80 may be greater than or equal to the organic photoresist layer 71 and the The sum of the heights of the anode metal layer 72 may also be smaller than the sum of the heights of the organic photoresist layer 71 and the anode metal layer 72, which is determined by process requirements.
  • the thin-film encapsulation layer 90 has a sandwich structure, two inorganic layers serve to isolate water and oxygen, and an organic layer sandwiched between them serves as a flat buffer.
  • the raised structure of the organic photoresist layer 71 includes a straight portion 711 and a slope portion 712, the straight portion 711 is located on the top edge of the raised structure, and the slope portion 712 is located on both sides of the raised structure Side; the raised structure is a single-layer membrane structure.
  • the proportion of the length of the straight portion 711 and the slope portion 712 in the total length has a great influence on the optical characteristics of the subsequent OLED, specifically, the proportion of the vertical outgoing light and oblique outgoing light on the front of the screen.
  • the heights of the first arc layer 7121 are H1, H2, and H3 (H1>H2>H3)
  • the lengths of the corresponding straight line portions 711 are L1, L2, and L3 (L1 ⁇ L2 ⁇ L3) .
  • the raised structure is a two-layer film structure
  • the thickness of the two layers of film may be the same or different
  • the thicknesses of the first layer of film 713 and the second layer of film 714 may be determined according to process requirements.
  • the length of the horizontal portion of the first layer of film 713 is L1
  • the length of the horizontal portion of the second layer of film 714 is L2.
  • FIG. 4 it is a partially enlarged schematic diagram of the solution of the OLED display device of the present application.
  • an organic photoresist is used on the planarization layer 60 to prepare the organic photoresist layer 71 having a raised structure, and the OLED pixel layer 73 is disposed on the surface of the organic photoresist layer 71.
  • the OLED pixel layer 73 includes a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, a metal electrode layer, an organic cover layer, etc., and is not limited to the above-mentioned film layers.
  • film layers such as the hole injection layer, the hole transport layer, the hole blocking layer, the electron transport layer, the electron injection layer, the metal electrode layer, and the organic coating layer are used
  • a common metal reticle is prepared, and the light emitting layer is manufactured using a precision metal mask, and the light emitting layer includes a red light emitting layer, a green light emitting layer, and a blue light emitting layer.
  • a red light emitting layer, a green light emitting layer, and a blue light emitting layer are sequentially manufactured using a precision metal mask for making a red light emitting layer, a precision metal mask for a green light emitting layer, and a precision metal mask for a blue light emitting layer.
  • the encapsulation film layer 90 covers the lower OLED pixel layer 73. After being encapsulated by the encapsulating film layer 90, it ends.
  • the red, green, and blue pixels emit light rays of red, green, and blue, respectively.
  • the emitted light includes vertical light and oblique light.
  • the bulge structure formed by the double-layer organic photoresist shown in FIG. 3 may also be used.
  • the structure of the single-layer or double-layer organic photoresist is determined by the process requirements.
  • FIG. 5 it is a partially enlarged schematic diagram of scheme two of the OLED display device of the present application. It differs from the first solution of the OLED display device of the present application only in that the surface of the planarization layer 60 is provided with columnar protrusions 81 that cover the edges of two adjacent organic photoresist layers 71.
  • the material of the columnar protrusions 81 is the same as the material of the pixel defining layer 80.
  • the height of the columnar protrusions 81 is greater than the height of the pixel defining layer 80; the height of the columnar protrusions 81 is 1-10um , Preferably 2um.
  • the anode metal layer 72 and the OLED pixel defining layer 73 are prepared by vacuum vacuum plating.
  • the function of the columnar protrusion 81 is to control the distance between the metal reticle and the TFT substrate to ensure that the reticle has been deposited when it moves in the horizontal direction.
  • the thin film on the anode metal layer 72 will not be scratched.
  • the distribution density of the columnar protrusions 81 is determined according to the needs of the manufacturing process.
  • FIG. 6 it is a partially enlarged schematic view of scheme three of the OLED display device of the present application. It differs from the first solution of the OLED display device of the present application only in that the light-emitting layer in the OLED pixel layer 73 is a white light-emitting layer, and a gap 100 is provided on the thin-film encapsulation layer 90, and the gap 100 The color filter layer 110 is provided thereon.
  • the OLED pixel layer 73 includes a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, a metal electrode layer, an organic cover layer, etc., and is not limited to the above film layer. All the film layers in the OLED pixel layer 73 are made with Davidia-type mask; the white light-emitting layer emits red, green, and blue light through the color filter layer 110, and the emitted light includes vertical light. It also includes oblique light.
  • the OLED display device prepared by the present application can realize that the light-emitting layers of three colors of red, green and blue are juxtaposed on the same horizontal plane, and the three sub-pixels of red, green and blue each have a special raised structure, and the light-emitting sub-pixels can be The light is emitted vertically upwards, and a certain proportion of light is emitted obliquely, which can improve the viewing angle characteristics (luminance-viewing angle characteristics and white screen color-viewing angle characteristics) of the OLED display panel.
  • OLED display device prepared in this application can realize that the light-emitting layers of three colors of red, green, and blue are juxtaposed on the same horizontal plane, and the OLED pixel layer is a continuous film layer over the entire screen, and emits white light, each bulge The structure emits white light. After the white light passes through the upper color filter, it can emit red, green and blue light.
  • the OLED display device prepared in this application adds a photomask in the array substrate process, and the cost has increased; the mask plate produced during the evaporation process has not changed, and the evaporation process does not cause cost increase.
  • the sub-pixels that emit light in the OLED display device of the present application change from a planar type to a three-dimensional type.
  • the three-dimensional red, green, and blue sub-pixels emit light including both vertical and oblique light.
  • the red, green, and blue sub-pixels emit only vertical light, which can achieve more uniform light in all directions; with this application, it can be improved
  • the brightness-viewing angle characteristic of the display screen with the change of the viewing angle, the screen brightness change is smaller, and the white screen color shift-viewing angle characteristic can also be improved. With the change of the viewing angle, the screen color shift is smaller.
  • the beneficial effect of the present application is that: the OLED display device provided by the present application is provided with an organic photoresist layer with a raised structure on the planarization layer, so that the light emitted from the light-emitting film pattern layer on the organic photoresist layer can be in multiple Exiting in the direction further makes the emitted light more uniform, and further improves the viewing angle of the display screen.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
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Abstract

一种OLED显示装置，包括：基板、缓冲层、有源层、第一栅极绝缘层、栅极金属层、第二栅极绝缘层、源漏极金属层、钝化层、平坦化层、有机光阻层、阳极金属层、像素限定层、OLED像素层以及薄膜封装层；其中，所述有机光阻层位于所述平坦化层的表面，所述有机光阻层设置为隆起状结构。

Description

OLED显示装置 技术领域
本申请涉及显示技术领域，尤其涉及一种OLED显示装置。
 背景技术
目前的显示领域中，有机发光二极管（Organic Light-Emitting Diode, OLED）因具有高效率、制备工艺简单、优良的特性等优点具有广阔的前景。现有技术的OLED显示装置中的发光材料层，通过精密金属掩模版，形成子像素大小的膜图案，红色发光材料层图案、绿色材料发光层图案、蓝色材料发光层图案并置沉积的像素限定层凹形部位内。现有的OLED显示装置中的像素限定层为梯形结构，使得位于像素限定层上的发光薄膜图案层发出的红色光线、绿色光线以及蓝色光线垂直于屏幕发射，造成屏幕的亮度视角限制和屏幕色偏现象。
综上所述，现有的OLED显示装置，由于屏幕上的发光像素阵列为平面型，使发光薄膜图案层发出的光线垂直于屏幕，进一步导致了屏幕存在视角限制和屏幕色偏现象。
 技术问题
现有的OLED显示装置，由于屏幕上的发光像素阵列为平面型，使发光薄膜图案层发出的光线垂直于屏幕，进一步导致了屏幕存在视角限制和屏幕色偏现象。
 技术解决方案
本申请提供一种OLED显示装置，能够使发光薄膜图案层发出的光线在多个方向上出射，以解决现有的OLED显示装置，由于屏幕上的发光像素阵列为平面型，使发光薄膜图案层发出的光线垂直于屏幕，进一步导致了屏幕存在视角限制的技术问题。
为解决上述问题，本申请提供的技术方案如下：
本申请提供一种OLED显示装置，包括：基板、缓冲层、有源层、第一栅极绝缘层、栅极金属层、第二栅极绝缘层、源漏极金属层、钝化层、平坦化层、有机光阻层、阳极金属层、像素限定层、OLED像素层以及薄膜封装层；
其中，所述第二栅极绝缘层上形成有第一通孔，所述源漏极金属层通过所述第一通孔与所述有源层连通；所述钝化层以及所述平坦化层上形成有第二通孔并暴露出所述源漏极金属层，所述阳极金属层通过所述第二通孔与所述源漏极金属层连通；所述有机光阻层位于所述平坦化层的表面，所述有机光阻层设置为隆起状结构，所述隆起状结构包括直线部分以及斜坡部分，所述直线部分位于所述隆起结构的顶边，所述斜坡部分位于所述隆起结构的两侧边。
在本申请实施例所提供的OLED显示装置中，所述隆起状结构为单层膜结构。
在本申请实施例所提供的OLED显示装置中，所述隆起状结构为双层膜结构。
在本申请实施例所提供的OLED显示装置中，所述平坦化层的表面设置有柱状突起，所述柱状突起覆盖相邻的两所述有机光阻层的边缘。
在本申请实施例所提供的OLED显示装置中，所述柱状突起的材质与所述像素限定层的材质相同，所述柱状突起的高度大于所述像素限定层的高度。
在本申请实施例所提供的OLED显示装置中，所述柱状突起的高度范围为1~10um。
在本申请实施例所提供的OLED显示装置中，所述OLED像素层包括空穴注入层、空穴传输层、发光层、空穴阻挡层、电子传输层、电子注入层、金属电极层以及有机覆盖层等，不限于上述膜层。
在本申请实施例所提供的OLED显示装置中，所述发光层还包括红色发光层、绿色发光层以及蓝色发光层。
在本申请实施例所提供的OLED显示装置中，所述发光层为白色发光层，所述薄膜封装层上设置有间隔间隙，所述间隔间隙上设置有滤色层。
本申请还提供一种OLED显示装置，包括：基板、缓冲层、有源层、第一栅极绝缘层、栅极金属层、第二栅极绝缘层、源漏极金属层、钝化层、平坦化层、有机光阻层、阳极金属层、像素限定层、OLED像素层以及薄膜封装层；
其中，所述第二栅极绝缘层上形成有第一通孔，所述源漏极金属层通过所述第一通孔与所述有源层连通；所述钝化层以及所述平坦化层上形成有第二通孔并暴露出所述源漏极金属层，所述阳极金属层通过所述第二通孔与所述源漏极金属层连通；所述有机光阻层位于所述平坦化层的表面，所述有机光阻层设置为隆起状结构。
在本申请实施例所提供的OLED显示装置中，所述平坦化层的表面设置有柱状突起，所述柱状突起覆盖相邻的两所述有机光阻层的边缘。
在本申请实施例所提供的OLED显示装置中，所述柱状突起的材质与所述像素限定层的材质相同，所述柱状突起的高度大于所述像素限定层的高度。
在本申请实施例所提供的OLED显示装置中，所述柱状突起的高度范围为1~10um。
在本申请实施例所提供的OLED显示装置中，所述OLED像素层包括空穴注入层、空穴传输层、发光层、空穴阻挡层、电子传输层、电子注入层、金属电极层以及有机覆盖层等，不限于上述膜层。
在本申请实施例所提供的OLED显示装置中，所述发光层还包括红色发光层、绿色发光层以及蓝色发光层。
在本申请实施例所提供的OLED显示装置中，所述发光层为白色发光层，所述薄膜封装层上设置有间隔间隙，所述间隔间隙上设置有滤色层。
 有益效果
本申请的有益效果为：本申请所提供的OLED显示装置，在平坦化层上设置一层隆起状结构的有机光阻层，使有机光阻层之上的发光薄膜图案层发出的光线在多个方向上出射，进一步使出射光线更加均匀，更进一步改善了显示屏幕的视角。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请OLED显示装置结构示意图。
图2为本申请OLED显示装置的有机光阻层的隆起结构方案一示意图。
图3为本申请OLED显示装置的有机光阻层的隆起结构方案二示意图。
图4为本申请OLED显示装置方案一局部放大示意图。
图5为本申请OLED显示装置方案二局部放大示意图。
图6为本申请OLED显示装置方案三局部放大示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
本申请针对现有的OLED显示装置，由于屏幕上的发光像素阵列为平面型，使发光薄膜图案层发出的光线垂直于屏幕，进一步导致了屏幕存在视角限制的技术问题，本实施例能够解决该缺陷。
如图1所示，为本申请OLED显示装置结构示意图。其中，本申请提供一种OLED显示装置，包括：基板10、缓冲层20、有源层31、第一栅极绝缘层30、栅极金属层41、第二栅极绝缘层40、源漏极金属层51、钝化层50、平坦化层60、有机光阻层71、阳极金属层72、像素限定层80、OLED像素层73以及薄膜封装层90；
其中，所述第二栅极绝缘层40上形成有第一通孔42，所述源漏极金属层51通过所述第一通孔42与所述有源层31连通；所述钝化层50以及所述平坦化层60上形成有第二通孔52并暴露出所述源漏极金属层51，所述阳极金属层72通过所述第二通孔52与所述源漏极金属层51连通；所述有机光阻层71位于所述平坦化层60的表面，所述有机光阻层71设置为隆起状结构。
具体地，所述基板10的材料为聚酰亚胺或玻璃；所述缓冲层20的材料为氮化硅或氧化硅其中的一种或两种；所述第一栅极绝缘层30的材料为氮化硅或氧化硅，所述第二栅极绝缘层40的材料与所述第一栅极绝缘层的材料相同；所述源漏极金属层51的材料均为钛或钛铝合金；所述栅极金属层41的材料为钼；所述有源层31的材料为金属氧化物，包括氧化铟镓锌或氧化铟锌；所述钝化层50的材料为氧化硅、氮化硅、氮硅化合物中的两种或多种的任意组合所构成的复合层结构，优选为SiO/SiNx叠层；所述平坦化层60为有机光阻层。
具体地，所述有机光阻层71是在所述平坦化层60的表面，采用采用旋转涂布或者缝隙涂布法等涂布光阻溶液，光阻涂布后经历一定温度和时间的烘烤，然后使用光罩曝光，曝光之后进行显影和烘干后形成具有隆起状结构的图形。
具体地，所述阳极金属层72铺设在所述有机光阻层71上，所以所述有机光阻层71的形状对所述阳极金属层72的影响比较大，由于所述OLED像素层73位于所述阳极金属层72表面，所以所述有机光阻层71的形状进而影响所述OLED像素层73的像素阵列；所述阳极金属层72是通过物理气相沉积（PVD）的方法制作氧化铟锡膜/金属膜/氧化铟锡膜的三层结构。
具体地，在所述阳极金属层72之上涂布光阻层，再次经历曝光、光阻显影以及金属电极层蚀刻，然后剥离残余光阻层，形成所述OLED像素层73。
具体地，所述OLED像素层73包括空穴注入层、空穴传输层、发光层、空穴阻挡层、电子传输层、电子注入层、金属电极层以及有机覆盖层等，不限于上述膜层。
具体地，所述像素限定层80位于所述阳极金属层72以及所述OLED像素层73的边缘两端，所述像素限定层80的高度可以大于或等于所述有机光阻层71与所述阳极金属层72的高度之和，也可以小于所述有机光阻层71与所述阳极金属层72的高度之和，由工艺需求决定。
具体地，所述薄膜封装层90为三明治结构，两层无机层起隔绝水氧的作用，一层有机层夹在中间起平坦缓冲的作用。
如图2所示，为本申请OLED显示装置的有机光阻层的隆起结构方案一示意图。其中，所述有机光阻层71的所述隆起状结构包括直线部分711以及斜坡部分712，所述直线部分711位于所述隆起结构的顶边，所述斜坡部分712位于所述隆起结构的两侧边；所述隆起状结构为单层膜结构。
所述直线部分711和斜坡部分712的长度在总长的占比，对于后续OLED的光学特性影响大，具体地，影响屏幕正面垂直出射光线和倾斜出射光线的占比。所述第一圆弧层7121的高度分别为H1、H2以及H3（H1＞H2＞H3）时，相对应的所述直线部分711的长度分别为L1   、L2以及L3（L1＜L2＜L3）。通过调整所述直线部分711的长度在所述有机光阻层71的总长度的占比，进而能够调整所述阳极金属层72的水平部分的长度。
如图3所示，为本申请OLED显示装置的有机光阻层的隆起结构方案二示意图。其中，所述隆起状结构为双层膜结构，两层膜的厚度可以相同，也可以不同，可以根据制程需求决定第一层膜713和第二层膜714的厚度。其中，所述第一层膜713的水平部分长度为L1，所述第二层膜714的水平部分长度为L2。采用该结构，在该双层结构的隆起结构上表面覆盖所述阳极金属层72，可以使得所述斜坡部分712具有更大的比例。
如图4所示，为本申请OLED显示装置方案一局部放大示意图。其中，所述平坦化层60上使用有机光阻制备具有隆起状结构的所述有机光阻层71，所述OLED像素层73设置于所述有机光阻层71表面。所述OLED像素层73包括空穴注入层、空穴传输层、发光层、空穴阻挡层、电子传输层、电子注入层、金属电极层以及有机覆盖层等，不限于上述膜层。其中，所述空穴注入层、所述空穴传输层、所述空穴阻挡层、所述电子传输层、所述电子注入层、所述金属电极层以及所述有机覆盖层等膜层使用共通型金属掩模版制备，使用精密金属掩模板制作所述发光层，所述发光层包括红光发光层、绿光发光层、蓝光发光层。使用制作红色发光层的精密金属掩模板、绿色发光层的的精密金属掩模板和蓝色发光层的精密金属掩模板依次制作红光发光层、绿光发光层、蓝光发光层。
所述封装膜层90覆盖下部的所述OLED像素层73。通过所述封装膜层90封装之后结束。红、绿、蓝三个像素分别出射光线红色、绿色、蓝色光线，出射的光线包括垂直光线，也包括倾斜光线。
优选地，为了延长两侧圆弧边的长度，也可以使用图3示意的双层有机光阻形成的隆起结构，单层或双层有机光阻的结构由制程需求决定。
如图5所示，为本申请OLED显示装置方案二局部放大示意图。其与本申请OLED显示装置方案一的不同之处仅在于所述平坦化层60的表面设置有柱状突起81，所述柱状突起81覆盖相邻的两所述有机光阻层71的边缘。
具体地，所述柱状突起81的材质与所述像素限定层80的材质相同，所述柱状突起81的高度大于所述像素限定层80的高度；所述柱状突起81的高度范围为1~10um，优选为2um。所述阳极金属层72和所述OLED像素限定层73通过真空真镀方法制备，所述柱状突起81的作用是控制金属掩模版和TFT基板的间距，保证掩模版在水平方向移动时，已经沉积在所述阳极金属层72之上的薄膜不会被划伤。所述柱状突起81的分布密度根据制程需要决定。
如图6所示，为本申请OLED显示装置方案三局部放大示意图。其与本申请OLED显示装置方案一的不同之处仅在于所述OLED像素层73中的所述发光层为白色发光层，所述薄膜封装层90上设置有间隔间隙100，所述间隔间隙100上设置有滤色层110。
其中，所述OLED像素层73包括空穴注入层、空穴传输层、发光层、空穴阻挡层、电子传输层、电子注入层、金属电极层以及有机覆盖层等，不限于上述膜层。所述OLED像素层73中的各膜层均采用珙桐型掩膜版制作；所述白色发光层经历所述滤色层110分别发出红色、绿色、蓝色光线，出射的光线包括垂直光线，也包括倾斜光线。
本申请所制备的OLED显示装置可以实现红、绿、蓝三种颜色的发光层并置在同一水平面上，而且红色、绿色、蓝色三个子像素各具有特殊的隆起结构，发光子像素即可实现垂直向上出射光线，也有一定比例的光线倾斜出射，这样可以改善OLED显示面板的视角特性（亮度-视角特性和白画面颜色-视角特性）。
本申请所制备的另一OLED显示装置可以实现红、绿、蓝三种颜色的发光层并置在同一水平面上，OLED像素层在整个屏幕范围内为连续的膜层，而且发射白光，各个隆起的结构出射白光，白光通过上部的滤色膜之后，可以出射红色、绿色、蓝色光线。
本申请制备的OLED显示装置在阵列基板制程中与现有技术相比增加了一道光罩，成本有所增加；在蒸镀制程时生产的掩模板都没有发生变化，蒸镀制程不会引起成本增加。本申请的OLED显示装置中发光的子像素由平面型变为三维型。三维型红绿蓝子像素出射光线既包括垂直光线也包括倾斜光线，现有技术之下红绿蓝子像素只有垂直光线出射，可以实现出射光在各个方向上更加均匀；借助此申请，可以改善显示屏幕的亮度-视角特性，随着观察视角的变化，屏幕亮度变化更小，白画面色偏-视角特性也可以改善，随着观察视角的变化，屏幕色偏更小。
本申请的有益效果为：本申请所提供的OLED显示装置，在平坦化层上设置一层隆起状结构的有机光阻层，使有机光阻层上的发光薄膜图案层发出的光线在多个方向上出射，进一步使出射光线更加均匀，更进一步改善了显示屏幕的视角。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (16)

  1. 一种OLED显示装置，其中，包括：
    基板；
    缓冲层，位于所述基板的表面；
    有源层，位于所述缓冲层的表面；
    第一栅极绝缘层，位于所述缓冲层的表面并覆盖所述有源层；
    栅极金属层，位于所述第一栅极绝缘层的表面；
    第二栅极绝缘层，位于所述第一栅极绝缘层的表面并覆盖所述栅极金属层，所述第二栅极绝缘层上形成有第一通孔；
    源漏极金属层，位于所述第二栅极绝缘层的表面，并且所述源漏极金属层通过所述第一通孔与所述有源层连通；
    钝化层，位于所述第二栅极绝缘层的表面并覆盖所述源漏极金属层；
    平坦化层，位于所述钝化层的表面，所述钝化层以及所述平坦化层上形成有第二通孔并暴露出所述源漏极金属层；
    有机光阻层，位于所述平坦化层的表面；
    阳极金属层，位于所述平坦化层的表面并完全覆盖所述有机光阻层，所述阳极金属层通过所述第二通孔与所述源漏极金属层连通；
    像素限定层，位于所述平坦化层的表面并覆盖所述阳极金属层的边缘两端；
    OLED像素层，位于所述阳极金属层的表面；
    薄膜封装层，位于所述基板的表面并覆盖所述有机光阻层、阳极金属层、像素限定层以及OLED像素层。
    其中，所述有机光阻层设置为隆起状结构，所述隆起状结构包括直线部分以及斜坡部分，所述直线部分位于所述隆起结构的顶边，所述斜坡部分位于所述隆起结构的两侧边。
  2. 根据权利要求1所述OLED显示装置，其中，所述隆起状结构为单层膜结构。
  3. 根据权利要求1所述OLED显示装置，其中，所述隆起状结构为双层膜结构。
  4. 根据权利要求1所述OLED显示装置，其中，所述平坦化层的表面设置有柱状突起，所述柱状突起覆盖相邻的两所述有机光阻层的边缘。
  5. 根据权利要求4所述OLED显示装置，其中，所述柱状突起的材质与所述像素限定层的材质相同，所述柱状突起的高度大于所述像素限定层的高度。
  6. 根据权利要求5所述OLED显示装置，其中，所述柱状突起的高度范围为1~10um。
  7. 根据权利要求1所述OLED显示装置，其中，所述OLED像素层包括空穴注入层、空穴传输层、发光层、空穴阻挡层、电子传输层、电子注入层、金属电极层以及有机覆盖层等，不限于上述膜层。
  8. 根据权利要求7所述OLED显示装置，其中，所述发光层还包括红色发光层、绿色发光层以及蓝色发光层。
  9. 根据权利要求7所述OLED显示装置，其中，所述发光层为白色发光层，所述薄膜封装层上设置有间隔间隙，所述间隔间隙上设置有滤色层。
  10. 一种OLED显示装置，其中，包括：
    基板；
    缓冲层，位于所述基板的表面；
    有源层，位于所述缓冲层的表面；
    第一栅极绝缘层，位于所述缓冲层的表面并覆盖所述有源层；
    栅极金属层，位于所述第一栅极绝缘层的表面；
    第二栅极绝缘层，位于所述第一栅极绝缘层的表面并覆盖所述栅极金属层，所述第二栅极绝缘层上形成有第一通孔；
    源漏极金属层，位于所述第二栅极绝缘层的表面，并且所述源漏极金属层通过所述第一通孔与所述有源层连通；
    钝化层，位于所述第二栅极绝缘层的表面并覆盖所述源漏极金属层；
    平坦化层，位于所述钝化层的表面，所述钝化层以及所述平坦化层上形成有第二通孔并暴露出所述源漏极金属层；
    有机光阻层，位于所述平坦化层的表面；
    阳极金属层，位于所述平坦化层的表面并完全覆盖所述有机光阻层，所述阳极金属层通过所述第二通孔与所述源漏极金属层连通；
    像素限定层，位于所述平坦化层的表面并覆盖所述阳极金属层的边缘两端；
    OLED像素层，位于所述阳极金属层的表面；
    薄膜封装层，位于所述基板的表面并覆盖所述有机光阻层、阳极金属层、像素限定层以及OLED像素层。
    其中，所述有机光阻层设置为隆起状结构。
  11. 根据权利要求10所述OLED显示装置，其中，所述平坦化层的表面设置有柱状突起，所述柱状突起覆盖相邻的两所述有机光阻层的边缘。
  12. 根据权利要求11所述OLED显示装置，其中，所述柱状突起的材质与所述像素限定层的材质相同，所述柱状突起的高度大于所述像素限定层的高度。
  13. 根据权利要求12所述OLED显示装置，其中，所述柱状突起的高度范围为1~10um。
  14. 根据权利要求10所述OLED显示装置，其中，所述OLED像素层包括空穴注入层、空穴传输层、发光层、空穴阻挡层、电子传输层、电子注入层、金属电极层以及有机覆盖层等，不限于上述膜层。
  15. 根据权利要求14所述OLED显示装置，其中，所述发光层还包括红色发光层、绿色发光层以及蓝色发光层。
  16. 根据权利要求14所述OLED显示装置，其中，所述发光层为白色发光层，所述薄膜封装层上设置有间隔间隙，所述间隔间隙上设置有滤色层。
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