WO2020118522A1 - Novel dielectric ceramic low-pass filter - Google Patents

Novel dielectric ceramic low-pass filter Download PDF

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Publication number
WO2020118522A1
WO2020118522A1 PCT/CN2018/120302 CN2018120302W WO2020118522A1 WO 2020118522 A1 WO2020118522 A1 WO 2020118522A1 CN 2018120302 W CN2018120302 W CN 2018120302W WO 2020118522 A1 WO2020118522 A1 WO 2020118522A1
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Prior art keywords
capacitor
substrate
twenty
capacitor substrate
point
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PCT/CN2018/120302
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French (fr)
Chinese (zh)
Inventor
梁启新
卓群飞
付迎华
马龙
陈琳玲
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深圳市麦捷微电子科技股份有限公司
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Priority to PCT/CN2018/120302 priority Critical patent/WO2020118522A1/en
Publication of WO2020118522A1 publication Critical patent/WO2020118522A1/en

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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01Frequency selective two-port networks

Definitions

  • the invention relates to a dielectric ceramic low-pass filter, in particular to a dielectric ceramic low-pass filter applied to a satellite television high frequency head LNB (Low Noise Block).
  • LNB Low Noise Block
  • LTCC Low Temperature Co-fired Ceramic
  • the LNB tuner is critical to the signal quality, and the filter in the LNB tuner is especially critical.
  • the purpose of the present invention is to solve the technical problem of the lack of high-performance dielectric ceramic low-pass filters based on low-temperature co-fired ceramic technology in the existing LNB high-frequency heads, and to propose a new dielectric ceramic low-pass filter filter.
  • a novel dielectric ceramic low-pass filter includes a base, a first port P1, a second port P2, and a third port P3 are provided at the bottom of the base, and a circuit layer is provided inside the base; the characteristics are as follows: There are five layers in the circuit layer, namely:
  • three mutually insulated metal plane conductors are printed on the ceramic dielectric substrate, namely: the thirtieth plane conductor (30), the thirty-third plane conductor (33) and the first plane conductor (1); Thirty plane conductors (30) and first plane conductors (1) are distributed on both sides of the thirty-third plane conductor (33); three mutually insulated metal plane conductors correspond to the first port P1, the second port P2 and The third port P3; wherein, the thirtieth plane conductor (30) is connected to the twenty-sixth point post (26), the first plane conductor (1) is connected to the second point post (2), the thirty-third plane conductor (33) The thirty-two-point post (32), thirty-fourth point post (34) and thirty-fifth point post (35) are connected;
  • an insulating metal plane conductor is printed on the ceramic dielectric substrate.
  • the insulating metal plane conductor includes: a third capacitor substrate (3), a twenty-fifth capacitor substrate (25), and a sixth capacitor substrate.
  • the chip (6) and the thirty-first capacitor substrate (31); the sixth capacitor substrate (6) and the thirty-first capacitor substrate (31) are overlapped on one side to form an “8” shape structure, and the twenty-fifth capacitor
  • the substrate (25) and the third capacitor substrate (3) are distributed on both sides of the "8" shape structure; the first common capacitor common to the sixth capacitor substrate (6) and the thirty-first capacitor substrate (31)
  • the substrate (6c) is connected to the thirty-two-point column (32), the thirty-fourth point column (34) and the thirty-fifth point column (35);
  • the ceramic dielectric substrate namely: the fourth capacitor substrate (4), the seventh capacitor substrate (7), the twenty-fourth capacitor substrate (24) and The twenty-eighth capacitor substrate (28); the seventh capacitor substrate (7) and the twenty-eighth capacitor substrate (28) are relatively distributed, and the fourth capacitor substrate (4) and the twenty-fourth capacitor substrate (28) 24) Relatively distributed; one end of the fourth capacitor substrate (4) is connected to the eighth point column (8), and the opposite end is connected to the second point column (2); one end of the seventh capacitor substrate (7) Connected to the twenty-third point post (23), the other end is connected to the thirteenth point post (13); one end of the twenty-fourth capacitor substrate (24) is connected to the seventeenth point post (17), the other end The twenty-sixth point column (26) is connected; the twenty-eighth capacitor substrate (28) is connected to the twenty-first point column (21) and the twenty-ninth point column (29);
  • a metal plane conductor is a combination of a ninth capacitor substrate (9), a tenth capacitor substrate (10) and a twenty-seventh capacitor substrate (27); a fifth capacitor substrate (5) and a twentieth
  • the two capacitor substrates (22) are distributed on both sides of the assembly; the tenth capacitor substrate (10) is distributed between the ninth capacitor substrate (9) and the twenty-seventh capacitor substrate (27); the fifth capacitor One end of the substrate (5) is connected to the eleventh pole (11), and the other end is connected to the twenty-ninth pole (29); one end of the twenty-second capacitor substrate (22) is connected to the first Twenty-three point column (23), the other end is connected to the nineteenth point column (19); the ninth capacitor substrate (9) is connected to the fifteenth point column (15); the twenty-seventh capacitor substrate (27) ) Connected to the twentieth column
  • the two ends of the fourteenth inductance coil (14) are respectively connected to the twentieth-point pillar (20) and the twenty-first-point pillar (21).
  • the twelfth inductor coil (12) and the eighteenth inductor coil (18) are symmetrically distributed on the left and right sides of the ceramic dielectric substrate, and the sixteenth inductor coil (16) and the fourteenth inductor coil (14) are symmetrically distributed on the ceramic
  • the sixteenth inductance coil (16) and the fourteenth inductance coil (14) have a U-shaped structure with opposite opening directions in the front and back positions of the middle part of the dielectric substrate.
  • the present invention is based on low-temperature co-fired ceramic technology and uses a semi-lumped parameter model design to realize the high-performance requirements of a new dielectric ceramic low-pass filter.
  • the present invention effectively achieves high out-of-band suppression, has the advantages of low loss, high reliability, low cost, and is suitable for large-scale production. In addition, it also adapts to the new development trend of miniaturization of electronic components.
  • FIG. 1 is a schematic diagram of the equivalent circuit of the novel dielectric ceramic low-pass filter of the present invention
  • FIG. 2 is a three-dimensional schematic diagram of the appearance structure of the novel dielectric ceramic low-pass filter of the present invention
  • FIG. 3 is a schematic diagram of the bottom port of the new dielectric ceramic low-pass filter of the present invention.
  • FIG. 4 is a schematic diagram of the internal structure of the novel dielectric ceramic low-pass filter of the present invention.
  • FIG. 5 is a schematic diagram of the planar structure of the first circuit layer of the present invention.
  • FIG. 6 is a schematic diagram of a planar structure of a dot-pillar connection between the first layer and the second layer of the present invention.
  • FIG. 7 is a schematic diagram of the planar structure of the second layer circuit of the present invention.
  • FIG. 8 is a schematic view of the plane structure of the dot-pillar connection between the second layer and the third layer of the present invention.
  • FIG. 9 is a schematic diagram of the plane structure of the third layer circuit of the present invention.
  • FIG. 10 is a schematic diagram of the plane structure of the dot-pillar connection between the third layer and the fourth layer of the present invention
  • FIG. 11 is a schematic diagram of the planar structure of the fourth layer circuit of the present invention.
  • FIG. 12 is a schematic diagram of a planar structure of a dot-pillar connection between the fourth layer and the fifth layer of the present invention.
  • FIG. 13 is a schematic diagram of the planar structure of the fifth layer circuit of the present invention.
  • the novel dielectric ceramic low-pass filter of the present invention includes a base, a first port P1, a second port P2, and a third port P3 are provided at the bottom of the base, and a circuit layer is provided inside the base;
  • the equivalent circuit diagram on the circuit layer is shown in FIG.
  • the fourth-order low-pass filter circuit formed by capacitor C9 has a symmetrical structure, and generates a transmission zero point in the high frequency band through the parallel resonance of inductor L1 and capacitor C2, and generates another transmission in the high frequency band through the parallel resonance of inductor L2 and capacitor C7.
  • the transmission line SL1 and the capacitor C4, and the transmission line SL2 and the capacitor C5 respectively resonate in parallel to generate a zero point in the high frequency band, so that the high end of the low-pass filter forms four zero points to achieve a high suppression effect.
  • the 3dB cut-off frequency point of the low-pass filter can be controlled by adjusting the parallel resonator composed of the transmission line SL1 and the capacitor C4, the transmission line SL2 and the capacitor C5, and in addition, the coupling degree of the transmission line SL1 and the transmission line SL2 and the capacitor C9 can control the low-pass filter Steepness.
  • 1 is an input/output port, corresponding to the first port P1 in FIG. 3
  • 2 is an output/input port, corresponding to the third port P3 in FIG. 3
  • the second port P2 is a ground port.
  • FIGS. 3 to 13 there are five circuit layers inside the substrate, which are:
  • three mutually insulated metal plane conductors are printed on the ceramic dielectric substrate, respectively: the thirty-thirteen plane conductor 30, the thirty-third plane conductor 33 and the first plane conductor 1;
  • the first planar conductor 1 is distributed on both sides of the thirty-third plane conductor 33;
  • three mutually insulated metal planar conductors respectively correspond to the first port P1, the second port P2 and the third port P3; wherein, the thirtieth plane conductor 30 is connected to a twenty-sixth point post 26, a first plane conductor 1 is connected to a second point post 2, a thirty-third plane conductor 33 is connected to a thirty-second point post 32, a thirty-fourth point post 34 and a third Thirty-five point post 35;
  • an insulated metal plane conductor is printed on the ceramic dielectric substrate.
  • the insulated metal plane conductor includes: a third capacitor substrate 3, a twenty-fifth capacitor substrate 25, a sixth capacitor substrate 6 and a third Thirty-one capacitor substrate 31; the sixth capacitor substrate 6 and the thirty-first capacitor substrate 31 are overlapped on one side to form an "8" shape structure, and the twenty-fifth capacitor substrate 25 and the third capacitor substrate 3 are distributed in Both sides of the "8" shape structure; the first common capacitor substrate 6c common to the sixth capacitor substrate 6 and the thirty-first capacitor substrate 31 is connected to the thirty-two-point pillar 32 and the thirty-fourth point Column 34 and 35th column 35;
  • four metal plane conductors are printed on the ceramic dielectric substrate, which are: fourth capacitor substrate 4, seventh capacitor substrate 7, twenty-fourth capacitor substrate 24 and twenty-eight capacitor substrate Film 28; the seventh capacitor substrate 7 is distributed relative to the twenty-eighth capacitor substrate 28, the fourth capacitor substrate 4 is distributed relatively to the twenty-fourth capacitor substrate 24; one end 4a of the fourth capacitor substrate 4 is connected to The eighth point post 8, the opposite end 4b is connected to the second point post 2; one end 7a of the seventh capacitor substrate 7 is connected to the 23rd point post 23, and the other end 7b is connected to the 13th point post 13; one end 24a of the twenty-fourth capacitor substrate 24 is connected to the seventeenth pole 17 and the other end 24b is connected to the twenty-sixth pole 26; the upper right end 28a of the twenty-eighth capacitor substrate 28 A twenty-first point post 21 and a twenty-ninth point post 29 are connected to the right lower end 28b;
  • three mutually insulated metal plane conductors are printed on the ceramic dielectric substrate, of which two metal plane conductors are the fifth capacitor substrate 5 and the twenty-second capacitor substrate 22, respectively, and the remaining one metal plane conductor It is a combination of a ninth capacitor substrate 9, a tenth capacitor substrate 10 and a twenty-seventh capacitor substrate 27; a fifth capacitor substrate 5 and a twenty-second capacitor substrate 22 are distributed on both sides of the combination
  • the tenth capacitor substrate 10 is distributed between the ninth capacitor substrate 9 and the twenty-seventh capacitor substrate 27; one end of the fifth capacitor substrate 5 is connected to the eleventh pole 11 and the other end is connected to the first Twenty-nine-point column 29; one end of the twenty-second capacitor substrate 22 is connected to the twenty-third point column 23, and the other end is connected to the nineteenth point column 19; the ninth capacitor substrate 9 is connected to the tenth Five-point column 15; the twenty-seventh capacitor substrate 27 is connected to the twentieth-point column 20;
  • the ceramic dielectric substrate On the fifth layer, four mutually insulated metal coils are printed on the ceramic dielectric substrate, namely the twelfth inductance coil 12, the sixteenth inductance coil 16, the eighteenth inductance coil 18 and the fourteenth inductance coil 14;
  • the twelfth inductance coil 12 and the eighteenth inductance coil 18 are symmetrically distributed on the left and right sides of the ceramic dielectric substrate, the sixteenth inductance coil 16 and the fourteenth inductance coil 14 are symmetrically distributed in the front and back positions of the middle of the ceramic dielectric substrate, the sixteenth The inductor coil 16 and the fourteenth inductor coil 14 have a U-shaped structure with opposite opening directions;
  • the head and tail ends 12a and 12b of the twelfth inductor coil 12 are respectively connected to the eleventh pole 11 and the eighth pole 8; the head and tail ends 16a and 16b of the sixteenth inductor coil 16 are respectively connected to the fifteenth Point column 15 and thirteenth point column 13; the head and tail ends 18a and 18b of the eighteenth inductor coil 18 are connected to the seventeenth point column 17 and the nineteenth point column 19; the head and tail of the fourteenth inductor coil 14
  • the two ends 14a and 14b are connected to the twentieth-point post 20 and the twenty-first-point post 21, respectively.
  • the first planar conductor 1 is the input and output port P3 of the low-pass filter
  • the third capacitor substrate 3 is one of the capacitors C8
  • the fourth capacitor substrate 4 is a common capacitor substrate of capacitor C7 and capacitor C8
  • the fifth capacitor substrate 5 is one of the capacitor substrates of capacitor C7
  • the sixth capacitor substrate 6 is one of the capacitor substrates of capacitor C3
  • the seventh capacitor substrate 7 is a common capacitor substrate of capacitor C3 and capacitor C4
  • the ninth capacitor substrate 9 is one of the capacitor substrates of capacitor C4
  • the tenth capacitor substrate 10 is one of the capacitor substrates of capacitor C9.
  • the twelfth inductor coil 12 is an inductive metal coil of the inductor L2
  • the fourteenth inductor coil 14 is a metal transmission line SL1
  • the sixteenth inductor coil 16 is a metal transmission line SL1
  • the eighteenth inductor coil 18 is an inductive metal coil of the inductor L1
  • the twenty-second capacitor substrate 22 is one of the capacitor C5, the twenty-fourth capacitor substrate 24 is the common capacitor substrate of the capacitor C1 and the capacitor C2;
  • the twenty-fifth capacitor substrate 25 is one of the capacitor C1 A capacitor substrate, the twenty-seventh capacitor substrate 27 is one of the capacitors C5;
  • the twenty-eighth capacitor substrate 28 is a common capacitor substrate of the capacitors C5 and C6, and the thirty-third plane conductor 30 is
  • the low-pass filter input/output port P1; the thirty-first capacitor substrate 31 is one of the capacitor substrates of the capacitor C6, and the thirty-third plane conductor 33 is the low-pass filter ground layer
  • the invention is integrated into the same component by using the LTCC molding technology, and then co-fired at a low temperature of 900°C, which effectively achieves high out-of-band suppression, and has the advantages of low loss, high reliability, low cost and suitable for large-scale production. In addition, it has adapted to the new trend of miniaturization of electronic components.

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Abstract

A novel dielectric ceramic low-pass filter relates to a dielectric ceramic low-pass filter and comprises a base body. Five circuit layers are provided inside the base body; a fourth-order low-pass filter circuit is constituted by equivalent circuits on the circuit layers and has a left-right symmetrical structure; a transmission zero point is generated in a high frequency band by means of parallel resonance of an inductor L1 and a capacitor C2, another transmission zero point is generated in the high frequency band by means of parallel resonance of an inductor L2 and a capacitor C7, and zero points are generated in the high frequency band by means of parallel resonance respectively between a transmission line SL1 and a capacitor C4 and between a transmission line SL2 and a capacitor C5, so that four zero points are formed at a high end to achieve a high suppression effect; a 3dB cut-off frequency point of the low-pass filter can be controlled by adjusting parallel resonators constituted by the transmission line SL1 and the capacitor C4 and the transmission line SL2 and the capacitor C5, and the steepness of the low-pass filter can be controlled by adjusting the coupling degree between the transmission line SL1 and the transmission line SL2 and a capacitor C9. The novel dielectric ceramic low-pass filter has the advantages of low loss, high reliability, low cost, and being suitable for large-scale production.

Description

一种新型介质陶瓷低通滤波器A new type of dielectric ceramic low-pass filter 技术领域Technical field
本发明涉及到介质陶瓷低通滤波器,尤其涉及应用于卫星电视高频头LNB(Low Noise Block)的介质陶瓷低通滤波器。The invention relates to a dielectric ceramic low-pass filter, in particular to a dielectric ceramic low-pass filter applied to a satellite television high frequency head LNB (Low Noise Block).
背景技术Background technique
低温共烧陶瓷(Low Temperature Co-fired Ceramic,LTCC)技术在电子元器件和封装领域具有独特的优势,因其高可靠性、低插损、高抑制、体积小、重量轻、易于集成、低成本、适合大规模生产等优点,广泛应用于通信、汽车和医疗器械等领域。Low Temperature Co-fired Ceramic (LTCC) technology has unique advantages in the field of electronic components and packaging, due to its high reliability, low insertion loss, high suppression, small size, light weight, easy integration, low The advantages of cost and suitability for large-scale production are widely used in the fields of communications, automobiles and medical equipment.
随着人们生活消费水平的提高,对电视直播的需求越来越多,要求也越来越高。LNB高频头作为卫星电视接收模块中不可或缺的关键组件,对信号质量的影响至关重要,而LNB高频头中滤波器则尤为关键。With the improvement of people's living standards, the demand for live TV is increasing and the requirements are getting higher and higher. As an indispensable key component in the satellite TV receiving module, the LNB tuner is critical to the signal quality, and the filter in the LNB tuner is especially critical.
技术问题technical problem
综上所述,本发明目的在于解决现有的LNB高频头中缺少以低温共烧陶瓷技术为基础的高性能要求介质陶瓷低通滤波器的技术问题,而提出一种新型介质陶瓷低通滤波器。In summary, the purpose of the present invention is to solve the technical problem of the lack of high-performance dielectric ceramic low-pass filters based on low-temperature co-fired ceramic technology in the existing LNB high-frequency heads, and to propose a new dielectric ceramic low-pass filter filter.
技术解决方案Technical solution
为解决本发明所提出的技术问题,采用的技术方案为:In order to solve the technical problems proposed by the present invention, the technical solutions adopted are:
一种新型介质陶瓷低通滤波器,包括基体,基体底部的设有第一端口P1、第二端口P2和第三端口P3,基体内部设有电路层;其特征在于:所述的基体内部的电路层一共有五层,分别为:A novel dielectric ceramic low-pass filter includes a base, a first port P1, a second port P2, and a third port P3 are provided at the bottom of the base, and a circuit layer is provided inside the base; the characteristics are as follows: There are five layers in the circuit layer, namely:
第一层,在陶瓷介质基板上印制有三块相互绝缘金属平面导体,分别为:第三十平面导体(30)、第三十三平面导体(33)和第一平面导体(1);第三十平面导体(30)和第一平面导体(1)分别分布在第三十三平面导体(33)的两侧;三块相互绝缘金属平面导体分别对应第一端口P1、第二端口P2和第三端口P3;其中,第三十平面导体(30)连接有第二十六点柱(26),第一平面导体(1)连接有第二点柱(2),第三十三平面导体(33)连接有第三十二点柱(32)、第三十四点柱(34)和第三十五点柱(35);In the first layer, three mutually insulated metal plane conductors are printed on the ceramic dielectric substrate, namely: the thirtieth plane conductor (30), the thirty-third plane conductor (33) and the first plane conductor (1); Thirty plane conductors (30) and first plane conductors (1) are distributed on both sides of the thirty-third plane conductor (33); three mutually insulated metal plane conductors correspond to the first port P1, the second port P2 and The third port P3; wherein, the thirtieth plane conductor (30) is connected to the twenty-sixth point post (26), the first plane conductor (1) is connected to the second point post (2), the thirty-third plane conductor (33) The thirty-two-point post (32), thirty-fourth point post (34) and thirty-fifth point post (35) are connected;
第二层,在陶瓷介质基板上印制有一块绝缘金属平面导体,该绝缘金属平面导体包括有:第三电容基片(3)、第二十五电容基片(25)、第六电容基片(6)和第三十一电容基片(31);第六电容基片(6)与第三十一电容基片(31)为一边重合构成“8”字形结构,第二十五电容基片(25)和第三电容基片(3)分布在“8”字形结构的两侧;第六电容基片(6)和第三十一电容基片(31)公共的第一公共电容基片(6c)连接所述的第三十二点柱(32)、第三十四点柱(34)和第三十五点柱(35);In the second layer, an insulating metal plane conductor is printed on the ceramic dielectric substrate. The insulating metal plane conductor includes: a third capacitor substrate (3), a twenty-fifth capacitor substrate (25), and a sixth capacitor substrate The chip (6) and the thirty-first capacitor substrate (31); the sixth capacitor substrate (6) and the thirty-first capacitor substrate (31) are overlapped on one side to form an “8” shape structure, and the twenty-fifth capacitor The substrate (25) and the third capacitor substrate (3) are distributed on both sides of the "8" shape structure; the first common capacitor common to the sixth capacitor substrate (6) and the thirty-first capacitor substrate (31) The substrate (6c) is connected to the thirty-two-point column (32), the thirty-fourth point column (34) and the thirty-fifth point column (35);
第三层,在陶瓷介质基板上印制有四块金属平面导体,分别为:第四电容基片(4)、第七电容基片(7)、第二十四电容基片(24)和第二十八电容基片(28);第七电容基片(7)与第二十八电容基片(28)相对分布,第四电容基片(4)与第二十四电容基片(24)相对分布;第四电容基片(4)的一端连接有第八点柱(8),相对的另一端连接所述的第二点柱(2);第七电容基片(7)一端连接有第二十三点柱(23),另一端连接有第十三点柱(13);第二十四电容基片(24)的一端连接有第十七点柱(17),另一端连接有所述的第二十六点柱(26);第二十八电容基片(28)连接有第二十一点柱(21)和第二十九点柱(29);In the third layer, four metal planar conductors are printed on the ceramic dielectric substrate, namely: the fourth capacitor substrate (4), the seventh capacitor substrate (7), the twenty-fourth capacitor substrate (24) and The twenty-eighth capacitor substrate (28); the seventh capacitor substrate (7) and the twenty-eighth capacitor substrate (28) are relatively distributed, and the fourth capacitor substrate (4) and the twenty-fourth capacitor substrate (28) 24) Relatively distributed; one end of the fourth capacitor substrate (4) is connected to the eighth point column (8), and the opposite end is connected to the second point column (2); one end of the seventh capacitor substrate (7) Connected to the twenty-third point post (23), the other end is connected to the thirteenth point post (13); one end of the twenty-fourth capacitor substrate (24) is connected to the seventeenth point post (17), the other end The twenty-sixth point column (26) is connected; the twenty-eighth capacitor substrate (28) is connected to the twenty-first point column (21) and the twenty-ninth point column (29);
第四层,在陶瓷介质基板上印制有三个相互绝缘的金属平面导体,其中两个金属平面导体分别为第五电容基片(5)和第二十二电容基片(22),剩余的一个金属平面导体为包含第九电容基片(9)、第十电容基片(10)和第二十七电容基片(27)的组合体;第五电容基片(5)和第二十二电容基片(22)分布在组合体的两侧;第十电容基片(10)分布在第九电容基片(9)与第二十七电容基片(27)之间;第五电容基片(5)的一端连接有第十一点柱(11),另一端连接所述第二十九点柱(29);第二十二电容基片(22)的一端连接所述的第二十三点柱(23),另一端连接有第十九点柱(19);第九电容基片(9)连接有第十五点柱(15);第二十七电容基片(27)连接有第二十点柱(20);In the fourth layer, three mutually insulated metal plane conductors are printed on the ceramic dielectric substrate, of which the two metal plane conductors are the fifth capacitor substrate (5) and the twenty-second capacitor substrate (22), respectively. A metal plane conductor is a combination of a ninth capacitor substrate (9), a tenth capacitor substrate (10) and a twenty-seventh capacitor substrate (27); a fifth capacitor substrate (5) and a twentieth The two capacitor substrates (22) are distributed on both sides of the assembly; the tenth capacitor substrate (10) is distributed between the ninth capacitor substrate (9) and the twenty-seventh capacitor substrate (27); the fifth capacitor One end of the substrate (5) is connected to the eleventh pole (11), and the other end is connected to the twenty-ninth pole (29); one end of the twenty-second capacitor substrate (22) is connected to the first Twenty-three point column (23), the other end is connected to the nineteenth point column (19); the ninth capacitor substrate (9) is connected to the fifteenth point column (15); the twenty-seventh capacitor substrate (27) ) Connected to the twentieth column (20);
第五层,在陶瓷介质基板上印制有四个相互绝缘金属线圈,分别为第十二电感线圈(12)、第十六电感线圈(16)、第十八电感线圈(18)和第十四电感线圈(14);第十二电感线圈(12)的两端分别连接所述第十一点柱(11)和第八点柱(8);第十六电感线圈(16)的两端分别连接所述第十五点柱(15)和第十三点柱(13);第十八电感线圈(18)的两端分别连接所述第十七点柱(17)和第十九点柱(19);第十四电感线圈(14)的两端分别连接所述第二十点柱(20)和第二十一点柱(21)。On the fifth layer, four mutually insulated metal coils are printed on the ceramic dielectric substrate, namely the twelfth inductance coil (12), the sixteenth inductance coil (16), the eighteenth inductance coil (18) and the tenth Four inductance coils (14); the two ends of the twelfth inductance coil (12) are respectively connected to the eleventh pole (11) and the eighth pole (8); the two ends of the sixteenth inductance coil (16) Connect the fifteenth point column (15) and the thirteenth point column (13) respectively; the two ends of the eighteenth inductance coil (18) are respectively connected to the seventeenth point column (17) and the nineteenth point The two ends of the fourteenth inductance coil (14) are respectively connected to the twentieth-point pillar (20) and the twenty-first-point pillar (21).
第十二电感线圈(12)和第十八电感线圈(18)对称的分布在陶瓷介质基板左右两侧,第十六电感线圈(16)和第十四电感线圈(14)对称的分布在陶瓷介质基板中部前后位置,第十六电感线圈(16)和第十四电感线圈(14)为开口方向相反的U形结构。The twelfth inductor coil (12) and the eighteenth inductor coil (18) are symmetrically distributed on the left and right sides of the ceramic dielectric substrate, and the sixteenth inductor coil (16) and the fourteenth inductor coil (14) are symmetrically distributed on the ceramic The sixteenth inductance coil (16) and the fourteenth inductance coil (14) have a U-shaped structure with opposite opening directions in the front and back positions of the middle part of the dielectric substrate.
有益效果Beneficial effect
本发明的益效果为:本发明以低温共烧陶瓷技术为基础,采用半集总参数模型设计实现新型介质陶瓷低通滤波器的高性能要求。本发明有效实现了带外高抑制,具有低损耗、高可靠性、低成本和适合于大规模的生产等优点,另外还适应了新的电子元件小型化发展趋势。The beneficial effects of the present invention are: the present invention is based on low-temperature co-fired ceramic technology and uses a semi-lumped parameter model design to realize the high-performance requirements of a new dielectric ceramic low-pass filter. The present invention effectively achieves high out-of-band suppression, has the advantages of low loss, high reliability, low cost, and is suitable for large-scale production. In addition, it also adapts to the new development trend of miniaturization of electronic components.
附图说明BRIEF DESCRIPTION
图1为本发明新型介质陶瓷低通滤波器等效电路示意图;1 is a schematic diagram of the equivalent circuit of the novel dielectric ceramic low-pass filter of the present invention;
图2为本发明新型介质陶瓷低通滤波器外观结构立体示意图;2 is a three-dimensional schematic diagram of the appearance structure of the novel dielectric ceramic low-pass filter of the present invention;
图3为本发明新型介质陶瓷低通滤波器外底部端口示意图;3 is a schematic diagram of the bottom port of the new dielectric ceramic low-pass filter of the present invention;
图4为本发明新型介质陶瓷低通滤波器内部结构示意图;4 is a schematic diagram of the internal structure of the novel dielectric ceramic low-pass filter of the present invention;
图5为本发明第一层电路层平面结构示意图;5 is a schematic diagram of the planar structure of the first circuit layer of the present invention;
图6为本发明第一层与第二层之间点柱连接平面结构示意图;6 is a schematic diagram of a planar structure of a dot-pillar connection between the first layer and the second layer of the present invention;
图7为本发明第二层电路平面结构示意图;7 is a schematic diagram of the planar structure of the second layer circuit of the present invention;
图8为本发明第二层与第三层之间点柱连接平面结构示意图; 8 is a schematic view of the plane structure of the dot-pillar connection between the second layer and the third layer of the present invention;
图9为本发明第三层电路平面结构示意图;9 is a schematic diagram of the plane structure of the third layer circuit of the present invention;
图10为本发明第三层与第四层之间点柱连接平面结构示意图10 is a schematic diagram of the plane structure of the dot-pillar connection between the third layer and the fourth layer of the present invention
图11为本发明第四层电路平面结构示意图;11 is a schematic diagram of the planar structure of the fourth layer circuit of the present invention;
图12为本发明第四层与第五层之间点柱连接平面结构示意图;12 is a schematic diagram of a planar structure of a dot-pillar connection between the fourth layer and the fifth layer of the present invention;
图13为本发明第五层电路平面结构示意图。13 is a schematic diagram of the planar structure of the fifth layer circuit of the present invention.
本发明的最佳实施方式Best Mode of the Invention
以下结合附图和本发明优选的具体实施方式对本发明的结构作进一步地说明。The structure of the present invention will be further described below with reference to the drawings and preferred specific embodiments of the present invention.
参照图1至图3中所示,本发明新型介质陶瓷低通滤波器,包括基体,基体底部的设有第一端口P1、第二端口P2和第三端口P3,基体内部设有电路层;电路层上的等效电路图如图1中所示,由电感L1、电感L2、传输线SL1、传输线SL2、电容C1、电容C2、电容C3、电容C4、电容C5、电容C6、电容C7、电容C8、电容C9构成的四阶低通滤波器电路,呈左右对称结构,且通过电感L1和电容C2并联谐振在高频段产生一个传输零点,通过电感L2和电容C7并联谐振在高频段产生另外一个传输零点,与此同时传输线SL1与电容C4、传输线SL2与电容C5分别并联谐振在高频段产生零点,由此低通滤波器的高端形成四个零点达到高抑制效果。且通过调节传输线SL1和电容C4、传输线SL2和电容C5构成的并联谐振器可以控制低通滤波器的3dB截止频率点,另外调节传输线SL1与传输线SL2耦合度以及电容C9可以控制低通滤波器的陡峭度。其中①为输入/输出端口,对应图3中第一端口P1,则②为输出/输入端口,对应图3中第三端口P3,第二端口P2为接地端口。Referring to FIGS. 1 to 3, the novel dielectric ceramic low-pass filter of the present invention includes a base, a first port P1, a second port P2, and a third port P3 are provided at the bottom of the base, and a circuit layer is provided inside the base; The equivalent circuit diagram on the circuit layer is shown in FIG. 1, which is composed of an inductor L1, an inductor L2, a transmission line SL1, a transmission line SL2, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a capacitor C5, a capacitor C6, a capacitor C7, a capacitor C8 The fourth-order low-pass filter circuit formed by capacitor C9 has a symmetrical structure, and generates a transmission zero point in the high frequency band through the parallel resonance of inductor L1 and capacitor C2, and generates another transmission in the high frequency band through the parallel resonance of inductor L2 and capacitor C7. At the same time, the transmission line SL1 and the capacitor C4, and the transmission line SL2 and the capacitor C5 respectively resonate in parallel to generate a zero point in the high frequency band, so that the high end of the low-pass filter forms four zero points to achieve a high suppression effect. And the 3dB cut-off frequency point of the low-pass filter can be controlled by adjusting the parallel resonator composed of the transmission line SL1 and the capacitor C4, the transmission line SL2 and the capacitor C5, and in addition, the coupling degree of the transmission line SL1 and the transmission line SL2 and the capacitor C9 can control the low-pass filter Steepness. Among them, ① is an input/output port, corresponding to the first port P1 in FIG. 3, and ② is an output/input port, corresponding to the third port P3 in FIG. 3, and the second port P2 is a ground port.
参照图3至图13中所示,基体内部设有电路层一共有五层,分别为:Referring to FIGS. 3 to 13, there are five circuit layers inside the substrate, which are:
第一层,在陶瓷介质基板上印制有三块相互绝缘金属平面导体,分别为:第三十平面导体30、第三十三平面导体33和第一平面导体1;第三十平面导体30和第一平面导体1分别分布在第三十三平面导体33的两侧;三块相互绝缘金属平面导体分别对应第一端口P1、第二端口P2和第三端口P3;其中,第三十平面导体30连接有第二十六点柱26,第一平面导体1连接有第二点柱2,第三十三平面导体33连接有第三十二点柱32、第三十四点柱34和第三十五点柱35;In the first layer, three mutually insulated metal plane conductors are printed on the ceramic dielectric substrate, respectively: the thirty-thirteen plane conductor 30, the thirty-third plane conductor 33 and the first plane conductor 1; The first planar conductor 1 is distributed on both sides of the thirty-third plane conductor 33; three mutually insulated metal planar conductors respectively correspond to the first port P1, the second port P2 and the third port P3; wherein, the thirtieth plane conductor 30 is connected to a twenty-sixth point post 26, a first plane conductor 1 is connected to a second point post 2, a thirty-third plane conductor 33 is connected to a thirty-second point post 32, a thirty-fourth point post 34 and a third Thirty-five point post 35;
第二层,在陶瓷介质基板上印制有一块绝缘金属平面导体,该绝缘金属平面导体包括有:第三电容基片3、第二十五电容基片25、第六电容基片6和第三十一电容基片31;第六电容基片6与第三十一电容基片31为一边重合构成“8”字形结构,第二十五电容基片25和第三电容基片3分布在“8”字形结构的两侧;第六电容基片6和第三十一电容基片31公共的第一公共电容基片6c连接所述的第三十二点柱32、第三十四点柱34和第三十五点柱35;In the second layer, an insulated metal plane conductor is printed on the ceramic dielectric substrate. The insulated metal plane conductor includes: a third capacitor substrate 3, a twenty-fifth capacitor substrate 25, a sixth capacitor substrate 6 and a third Thirty-one capacitor substrate 31; the sixth capacitor substrate 6 and the thirty-first capacitor substrate 31 are overlapped on one side to form an "8" shape structure, and the twenty-fifth capacitor substrate 25 and the third capacitor substrate 3 are distributed in Both sides of the "8" shape structure; the first common capacitor substrate 6c common to the sixth capacitor substrate 6 and the thirty-first capacitor substrate 31 is connected to the thirty-two-point pillar 32 and the thirty-fourth point Column 34 and 35th column 35;
第三层,在陶瓷介质基板上印制有四块金属平面导体,分别为:第四电容基片4、第七电容基片7、第二十四电容基片24和第二十八电容基片28;第七电容基片7与第二十八电容基片28相对分布,第四电容基片4与第二十四电容基片24相对分布;第四电容基片4的一端4a连接有第八点柱8,相对的另一端4b连接所述的第二点柱2;第七电容基片7的一端7a连接有第二十三点柱23,另一端7b连接有第十三点柱13;第二十四电容基片24的一端24a连接有第十七点柱17,另一端24b连接有所述的第二十六点柱26;第二十八电容基片28右侧上端28a和右侧下端28b连接有第二十一点柱21和第二十九点柱29;In the third layer, four metal plane conductors are printed on the ceramic dielectric substrate, which are: fourth capacitor substrate 4, seventh capacitor substrate 7, twenty-fourth capacitor substrate 24 and twenty-eight capacitor substrate Film 28; the seventh capacitor substrate 7 is distributed relative to the twenty-eighth capacitor substrate 28, the fourth capacitor substrate 4 is distributed relatively to the twenty-fourth capacitor substrate 24; one end 4a of the fourth capacitor substrate 4 is connected to The eighth point post 8, the opposite end 4b is connected to the second point post 2; one end 7a of the seventh capacitor substrate 7 is connected to the 23rd point post 23, and the other end 7b is connected to the 13th point post 13; one end 24a of the twenty-fourth capacitor substrate 24 is connected to the seventeenth pole 17 and the other end 24b is connected to the twenty-sixth pole 26; the upper right end 28a of the twenty-eighth capacitor substrate 28 A twenty-first point post 21 and a twenty-ninth point post 29 are connected to the right lower end 28b;
第四层,在陶瓷介质基板上印制有三个相互绝缘的金属平面导体,其中两个金属平面导体分别为第五电容基片5和第二十二电容基片22,剩余的一个金属平面导体为包含第九电容基片9、第十电容基片10和第二十七电容基片27的组合体;第五电容基片5和第二十二电容基片22分布在组合体的两侧;第十电容基片10分布在第九电容基片9与第二十七电容基片27之间;第五电容基片5的一端连接有第十一点柱11,另一端连接所述第二十九点柱29;第二十二电容基片22的一端连接所述的第二十三点柱23,另一端连接有第十九点柱19;第九电容基片9连接有第十五点柱15;第二十七电容基片27连接有第二十点柱20;In the fourth layer, three mutually insulated metal plane conductors are printed on the ceramic dielectric substrate, of which two metal plane conductors are the fifth capacitor substrate 5 and the twenty-second capacitor substrate 22, respectively, and the remaining one metal plane conductor It is a combination of a ninth capacitor substrate 9, a tenth capacitor substrate 10 and a twenty-seventh capacitor substrate 27; a fifth capacitor substrate 5 and a twenty-second capacitor substrate 22 are distributed on both sides of the combination The tenth capacitor substrate 10 is distributed between the ninth capacitor substrate 9 and the twenty-seventh capacitor substrate 27; one end of the fifth capacitor substrate 5 is connected to the eleventh pole 11 and the other end is connected to the first Twenty-nine-point column 29; one end of the twenty-second capacitor substrate 22 is connected to the twenty-third point column 23, and the other end is connected to the nineteenth point column 19; the ninth capacitor substrate 9 is connected to the tenth Five-point column 15; the twenty-seventh capacitor substrate 27 is connected to the twentieth-point column 20;
第五层,在陶瓷介质基板上印制有四个相互绝缘金属线圈,分别为第十二电感线圈12、第十六电感线圈16、第十八电感线圈18和第十四电感线圈14;第十二电感线圈12和第十八电感线圈18对称的分布在陶瓷介质基板左右两侧,第十六电感线圈16和第十四电感线圈14对称的分布在陶瓷介质基板中部前后位置,第十六电感线圈16和第十四电感线圈14为开口方向相反的U形结构;On the fifth layer, four mutually insulated metal coils are printed on the ceramic dielectric substrate, namely the twelfth inductance coil 12, the sixteenth inductance coil 16, the eighteenth inductance coil 18 and the fourteenth inductance coil 14; The twelfth inductance coil 12 and the eighteenth inductance coil 18 are symmetrically distributed on the left and right sides of the ceramic dielectric substrate, the sixteenth inductance coil 16 and the fourteenth inductance coil 14 are symmetrically distributed in the front and back positions of the middle of the ceramic dielectric substrate, the sixteenth The inductor coil 16 and the fourteenth inductor coil 14 have a U-shaped structure with opposite opening directions;
第十二电感线圈12的首尾两端12a、12b分别连接所述第十一点柱11和第八点柱8;第十六电感线圈16的首尾两端16a、16b分别连接所述第十五点柱15和第十三点柱13;第十八电感线圈18的首尾两端18a、18b分别连接所述第十七点柱17和第十九点柱19;第十四电感线圈14的首尾两端14a、14b分别连接所述第二十点柱20和第二十一点柱21。The head and tail ends 12a and 12b of the twelfth inductor coil 12 are respectively connected to the eleventh pole 11 and the eighth pole 8; the head and tail ends 16a and 16b of the sixteenth inductor coil 16 are respectively connected to the fifteenth Point column 15 and thirteenth point column 13; the head and tail ends 18a and 18b of the eighteenth inductor coil 18 are connected to the seventeenth point column 17 and the nineteenth point column 19; the head and tail of the fourteenth inductor coil 14 The two ends 14a and 14b are connected to the twentieth-point post 20 and the twenty-first-point post 21, respectively.
基体内部设有电路层中各部件与等效电路中各元件的对应关系分别为:第一平面导体1为低通滤波器输入输出端口P3,第三电容基片3为电容C8的其中一电容基片,第四电容基片4为电容C7和电容C8公共电容基片,第五电容基片5为电容C7的其中一电容基片,第六电容基片6为电容C3的其中一电容基片,第七电容基片7为电容C3和电容C4公共电容基片, 第九电容基片9为电容C4其中一电容基片,第十电容基片10为电容C9的其中一电容基片,第十二电感线圈12为电感L2的电感金属线圈,第十四电感线圈14为金属传输线SL1,第十六电感线圈16为金属传输线SL1,第十八电感线圈18为电感L1的电感金属线圈, 第二十二电容基片22为电容C5的其中一电容基片,第二十四电容基片24为电容C1和电容C2公共电容基片;第二十五电容基片25为电容C1的其中一电容基片,第二十七电容基片27为电容C5的其中一电容基片;第二十八电容基片28为电容C5和电容C6的公共电容基片,第三十平面导体30为低通滤波器输入输出端口P1;第三十一电容基片31为电容C6的其中一电容基片,第三十三平面导体33为低通滤波器接地层端口P2。The correspondence between the components in the circuit layer and the components in the equivalent circuit inside the substrate are: the first planar conductor 1 is the input and output port P3 of the low-pass filter, and the third capacitor substrate 3 is one of the capacitors C8 The substrate, the fourth capacitor substrate 4 is a common capacitor substrate of capacitor C7 and capacitor C8, the fifth capacitor substrate 5 is one of the capacitor substrates of capacitor C7, and the sixth capacitor substrate 6 is one of the capacitor substrates of capacitor C3 The seventh capacitor substrate 7 is a common capacitor substrate of capacitor C3 and capacitor C4, the ninth capacitor substrate 9 is one of the capacitor substrates of capacitor C4, and the tenth capacitor substrate 10 is one of the capacitor substrates of capacitor C9. The twelfth inductor coil 12 is an inductive metal coil of the inductor L2, the fourteenth inductor coil 14 is a metal transmission line SL1, the sixteenth inductor coil 16 is a metal transmission line SL1, and the eighteenth inductor coil 18 is an inductive metal coil of the inductor L1, The twenty-second capacitor substrate 22 is one of the capacitor C5, the twenty-fourth capacitor substrate 24 is the common capacitor substrate of the capacitor C1 and the capacitor C2; the twenty-fifth capacitor substrate 25 is one of the capacitor C1 A capacitor substrate, the twenty-seventh capacitor substrate 27 is one of the capacitors C5; the twenty-eighth capacitor substrate 28 is a common capacitor substrate of the capacitors C5 and C6, and the thirty-third plane conductor 30 is The low-pass filter input/output port P1; the thirty-first capacitor substrate 31 is one of the capacitor substrates of the capacitor C6, and the thirty-third plane conductor 33 is the low-pass filter ground layer port P2.
本发明利用LTCC成型技术集成到同一元件中,然后利用900℃低温共烧而成,有效实现了带外高抑制,具有低损耗、高可靠性、低成本和适合于大规模的生产等优点,另外还适应了新的电子元件小型化发展趋势。The invention is integrated into the same component by using the LTCC molding technology, and then co-fired at a low temperature of 900°C, which effectively achieves high out-of-band suppression, and has the advantages of low loss, high reliability, low cost and suitable for large-scale production. In addition, it has adapted to the new trend of miniaturization of electronic components.

Claims (2)

  1. 一种新型介质陶瓷低通滤波器,包括基体,基体底部的设有第一端口P1、第二端口P2和第三端口P3,基体内部设有电路层;其特征在于:所述的基体内部的电路层一共有五层,分别为:A novel dielectric ceramic low-pass filter includes a base, a first port P1, a second port P2, and a third port P3 are provided at the bottom of the base, and a circuit layer is provided inside the base; the characteristics are as follows: There are five layers in the circuit layer, namely:
    第一层,在陶瓷介质基板上印制有三块相互绝缘金属平面导体,分别为:第三十平面导体(30)、第三十三平面导体(33)和第一平面导体(1);第三十平面导体(30)和第一平面导体(1)分别分布在第三十三平面导体(33)的两侧;三块相互绝缘金属平面导体分别对应第一端口P1、第二端口P2和第三端口P3;其中,第三十平面导体(30)连接有第二十六点柱(26),第一平面导体(1)连接有第二点柱(2),第三十三平面导体(33)连接有第三十二点柱(32)、第三十四点柱(34)和第三十五点柱(35);In the first layer, three mutually insulated metal plane conductors are printed on the ceramic dielectric substrate, namely: the thirtieth plane conductor (30), the thirty-third plane conductor (33) and the first plane conductor (1); Thirty plane conductors (30) and first plane conductors (1) are distributed on both sides of the thirty-third plane conductor (33); three mutually insulated metal plane conductors correspond to the first port P1, the second port P2 and The third port P3; wherein, the thirtieth plane conductor (30) is connected to the twenty-sixth point post (26), the first plane conductor (1) is connected to the second point post (2), the thirty-third plane conductor (33) The thirty-two-point post (32), thirty-fourth point post (34) and thirty-fifth point post (35) are connected;
    第二层,在陶瓷介质基板上印制有一块绝缘金属平面导体,该绝缘金属平面导体包括有:第三电容基片(3)、第二十五电容基片(25)、第六电容基片(6)和第三十一电容基片(31);第六电容基片(6)与第三十一电容基片(31)为一边重合构成“8”字形结构,第二十五电容基片(25)和第三电容基片(3)分布在“8”字形结构的两侧;第六电容基片(6)和第三十一电容基片(31)公共的第一公共电容基片(6c)连接所述的第三十二点柱(32)、第三十四点柱(34)和第三十五点柱(35);In the second layer, an insulating metal plane conductor is printed on the ceramic dielectric substrate. The insulating metal plane conductor includes: a third capacitor substrate (3), a twenty-fifth capacitor substrate (25), and a sixth capacitor substrate The chip (6) and the thirty-first capacitor substrate (31); the sixth capacitor substrate (6) and the thirty-first capacitor substrate (31) are overlapped on one side to form an “8” shape structure, and the twenty-fifth capacitor The substrate (25) and the third capacitor substrate (3) are distributed on both sides of the "8" shape structure; the first common capacitor common to the sixth capacitor substrate (6) and the thirty-first capacitor substrate (31) The substrate (6c) is connected to the thirty-two-point column (32), the thirty-fourth point column (34) and the thirty-fifth point column (35);
    第三层,在陶瓷介质基板上印制有四块金属平面导体,分别为:第四电容基片(4)、第七电容基片(7)、第二十四电容基片(24)和第二十八电容基片(28);第七电容基片(7)与第二十八电容基片(28)相对分布,第四电容基片(4)与第二十四电容基片(24)相对分布;第四电容基片(4)的一端连接有第八点柱(8),相对的另一端连接所述的第二点柱(2);第七电容基片(7)一端连接有第二十三点柱(23),另一端连接有第十三点柱(13);第二十四电容基片(24)的一端连接有第十七点柱(17),另一端连接有所述的第二十六点柱(26);第二十八电容基片(28)连接有第二十一点柱(21)和第二十九点柱(29);In the third layer, four metal planar conductors are printed on the ceramic dielectric substrate, namely: the fourth capacitor substrate (4), the seventh capacitor substrate (7), the twenty-fourth capacitor substrate (24) and The twenty-eighth capacitor substrate (28); the seventh capacitor substrate (7) and the twenty-eighth capacitor substrate (28) are relatively distributed, and the fourth capacitor substrate (4) and the twenty-fourth capacitor substrate (28) 24) Relatively distributed; one end of the fourth capacitor substrate (4) is connected to the eighth point column (8), and the opposite end is connected to the second point column (2); one end of the seventh capacitor substrate (7) Connected to the twenty-third point post (23), the other end is connected to the thirteenth point post (13); one end of the twenty-fourth capacitor substrate (24) is connected to the seventeenth point post (17), the other end The twenty-sixth point column (26) is connected; the twenty-eighth capacitor substrate (28) is connected to the twenty-first point column (21) and the twenty-ninth point column (29);
    第四层,在陶瓷介质基板上印制有三个相互绝缘的金属平面导体,其中两个金属平面导体分别为第五电容基片(5)和第二十二电容基片(22),剩余的一个金属平面导体为包含第九电容基片(9)、第十电容基片(10)和第二十七电容基片(27)的组合体;第五电容基片(5)和第二十二电容基片(22)分布在组合体的两侧;第十电容基片(10)分布在第九电容基片(9)与第二十七电容基片(27)之间;第五电容基片(5)的一端连接有第十一点柱(11),另一端连接所述第二十九点柱(29);第二十二电容基片(22)的一端连接所述的第二十三点柱(23),另一端连接有第十九点柱(19);第九电容基片(9)连接有第十五点柱(15);第二十七电容基片(27)连接有第二十点柱(20);In the fourth layer, three mutually insulated metal plane conductors are printed on the ceramic dielectric substrate, of which the two metal plane conductors are the fifth capacitor substrate (5) and the twenty-second capacitor substrate (22), respectively. A metal plane conductor is a combination of a ninth capacitor substrate (9), a tenth capacitor substrate (10) and a twenty-seventh capacitor substrate (27); a fifth capacitor substrate (5) and a twentieth The two capacitor substrates (22) are distributed on both sides of the assembly; the tenth capacitor substrate (10) is distributed between the ninth capacitor substrate (9) and the twenty-seventh capacitor substrate (27); the fifth capacitor One end of the substrate (5) is connected to the eleventh pole (11), and the other end is connected to the twenty-ninth pole (29); one end of the twenty-second capacitor substrate (22) is connected to the first Twenty-three point column (23), the other end is connected to the nineteenth point column (19); the ninth capacitor substrate (9) is connected to the fifteenth point column (15); the twenty-seventh capacitor substrate (27) ) Connected to the twentieth column (20);
    第五层,在陶瓷介质基板上印制有四个相互绝缘金属线圈,分别为第十二电感线圈(12)、第十六电感线圈(16)、第十八电感线圈(18)和第十四电感线圈(14);第十二电感线圈(12)的两端分别连接所述第十一点柱(11)和第八点柱(8);第十六电感线圈(16)的两端分别连接所述第十五点柱(15)和第十三点柱(13);第十八电感线圈(18)的两端分别连接所述第十七点柱(17)和第十九点柱(19);第十四电感线圈(14)的两端分别连接所述第二十点柱(20)和第二十一点柱(21)。On the fifth layer, four mutually insulated metal coils are printed on the ceramic dielectric substrate, namely the twelfth inductance coil (12), the sixteenth inductance coil (16), the eighteenth inductance coil (18) and the tenth Four inductance coils (14); the two ends of the twelfth inductance coil (12) are respectively connected to the eleventh pole (11) and the eighth pole (8); the two ends of the sixteenth inductance coil (16) Connect the fifteenth point column (15) and the thirteenth point column (13) respectively; the two ends of the eighteenth inductance coil (18) are respectively connected to the seventeenth point column (17) and the nineteenth point The two ends of the fourteenth inductance coil (14) are respectively connected to the twentieth-point pillar (20) and the twenty-first-point pillar (21).
  2. 根据权利要求1所述的一种新型介质陶瓷低通滤波器,其特征在于:第十二电感线圈(12)和第十八电感线圈(18)对称的分布在陶瓷介质基板左右两侧,第十六电感线圈(16)和第十四电感线圈(14)对称的分布在陶瓷介质基板中部前后位置,第十六电感线圈(16)和第十四电感线圈(14)为开口方向相反的U形结构。A novel dielectric ceramic low-pass filter according to claim 1, characterized in that the twelfth inductance coil (12) and the eighteenth inductance coil (18) are symmetrically distributed on the left and right sides of the ceramic dielectric substrate, The sixteenth inductance coil (16) and the fourteenth inductance coil (14) are symmetrically distributed in the front and back of the middle of the ceramic dielectric substrate. The sixteenth inductance coil (16) and the fourteenth inductance coil (14) are U with opposite opening directions形结构。 Shaped structure.
PCT/CN2018/120302 2018-12-11 2018-12-11 Novel dielectric ceramic low-pass filter WO2020118522A1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050219011A1 (en) * 2004-04-02 2005-10-06 Yo-Shen Lin Lowpass filter formed in a multi-layer ceramic
CN104579220A (en) * 2015-02-03 2015-04-29 深圳市麦捷微电子科技股份有限公司 Multilayer ceramic dielectric sheet type low-pass filter
CN105070981A (en) * 2015-08-12 2015-11-18 谈赛桥 Low-pass filter
CN105846789A (en) * 2016-03-23 2016-08-10 深圳振华富电子有限公司 Low-pass filter and preparation method thereof
CN106025455A (en) * 2016-06-01 2016-10-12 南京理工大学 LTCC based subminiature high-performance low-pass filter

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050219011A1 (en) * 2004-04-02 2005-10-06 Yo-Shen Lin Lowpass filter formed in a multi-layer ceramic
CN104579220A (en) * 2015-02-03 2015-04-29 深圳市麦捷微电子科技股份有限公司 Multilayer ceramic dielectric sheet type low-pass filter
CN105070981A (en) * 2015-08-12 2015-11-18 谈赛桥 Low-pass filter
CN105846789A (en) * 2016-03-23 2016-08-10 深圳振华富电子有限公司 Low-pass filter and preparation method thereof
CN106025455A (en) * 2016-06-01 2016-10-12 南京理工大学 LTCC based subminiature high-performance low-pass filter

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