WO2020108527A1 - 具有带通和高通双重功能的基于体声波谐振器的滤波器 - Google Patents

具有带通和高通双重功能的基于体声波谐振器的滤波器 Download PDF

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Publication number
WO2020108527A1
WO2020108527A1 PCT/CN2019/121256 CN2019121256W WO2020108527A1 WO 2020108527 A1 WO2020108527 A1 WO 2020108527A1 CN 2019121256 W CN2019121256 W CN 2019121256W WO 2020108527 A1 WO2020108527 A1 WO 2020108527A1
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bulk acoustic
parallel
acoustic wave
wave resonator
series
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French (fr)
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庞慰
徐利军
郑云卓
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material

Definitions

  • the invention relates to the technical field of microelectronic devices, in particular to a filter based on a bulk acoustic wave resonator with dual functions of bandpass and highpass.
  • thin-film bulk acoustic wave filters utilize the piezoelectric effect of piezoelectric crystals to generate resonance. Since the mechanical wave generated by the resonance, not as a resonator an electromagnetic wave source, the wavelength of the mechanical wave wave length of 105 times the ratio of the solenoid. Therefore, the volume of the thin film bulk acoustic wave filter and the resonator composed of it is greatly reduced compared with the size of the traditional electromagnetic filter. On the other hand, since the crystal orientation growth of the piezoelectric crystal can be well controlled at present, the loss of the resonator is extremely small, and the quality factor is high, which can cope with the complex design requirements of steep transition band and low insertion loss. Because the bulk acoustic wave filter has the characteristics of small size, high roll-off, and low insertion loss, the filter with this core has been widely used in communication systems.
  • the traditional single bulk acoustic wave filter can only have one frequency band.
  • one solution technique is to use multiple bulk acoustic wave filters in parallel, and different parallel branches have different frequency bands.
  • the devices manufactured therefrom increase the size of the device and increase the complexity of the device, so that the product yield and manufacturing cost have deteriorated to varying degrees.
  • the above techniques can be used to achieve different filter bands in the same filter, considering that the filters in each branch are often band-pass filters, for those that can achieve both band-pass and high-pass filtering functions in the same filter Small size and low cost technology, no effective solution has been proposed yet.
  • the present invention proposes a bulk acoustic wave resonator-based filter with dual functions of bandpass and highpass.
  • the filter based on a bulk acoustic wave resonator with dual functions of band pass and high pass proposed by the present invention includes a series branch and N parallel branches, where N is a positive integer greater than or equal to 3, wherein: in the series branch Contains N+1 series bulk acoustic resonators; each parallel branch contains an inductor and a parallel bulk acoustic resonator, the first end of the inductor is connected to the two phases in the series branch Between adjacent series bulk acoustic resonators, the second end of the inductor is connected to the first end of the parallel bulk acoustic resonator in the parallel branch where the inductor is located, and the second end of the bulk acoustic resonator in the parallel branch The terminal is connected to the electrical ground plane.
  • the series resonance frequency of each series bulk acoustic resonator is the same.
  • each parallel bulk acoustic wave resonator in the parallel branch has a mass load, and the thickness of the mass load added by each parallel resonator is not the same value.
  • the difference between the parallel resonance frequency of each parallel bulk acoustic wave resonator in the associated parallel branch and the series resonance frequency of each series bulk acoustic wave resonator in the series branch is within 10 MHz.
  • the inductances in the adjacent parallel branches have mutual inductance.
  • the filter includes a single capacitor connected across the connection point between the inductance in a group of adjacent parallel branches and the bulk acoustic wave resonator.
  • the filter may include a plurality of capacitors, and each capacitor is connected between the connection point of the inductance in each group of adjacent parallel branches and the bulk acoustic wave resonator.
  • the inductance and capacitance are implemented by an integrated passive device process.
  • the inductance in each of the parallel branches meets the following formula: L i >1/ ⁇ 2 C i where i is a positive integer from 1 to N, and L i represents the i-th parallel branch
  • the inductance value of the inductor, ⁇ represents the cut-off frequency of the high-pass filter, and C i represents the capacitance value of the equivalent capacitance of the parallel resonator in the i-th parallel branch.
  • the bulk acoustic wave resonator-based filter with dual functions of band pass and high pass uses a cascade of bulk acoustic wave resonators and inductors to form a high roll-off band pass and high pass filter.
  • the series resonator, The parallel resonator is composed of inductance and capacitance. There is mutual inductance between the inductances of the parallel branches. At the same time, there are certain requirements for the selection of each inductance value. When certain conditions are met, high roll-off bandpass and high-pass filters can be formed at the same time.
  • Figure 1 is a characteristic curve diagram of bulk acoustic wave resonator
  • FIG. 2 is a topological structure diagram of a bulk acoustic wave resonator-based filter with dual functions of band pass and high pass according to an embodiment of the present invention
  • FIG. 3 is an equivalent circuit diagram of a bulk acoustic wave resonator-based filter with dual functions of band pass and high pass according to an embodiment of the present invention when the operating frequency is higher than the parallel resonance frequency;
  • Figure 4 is the effect drawing of the bonding wire package
  • FIG. 5(a) is an insertion loss diagram of a bulk acoustic wave resonator-based filter with dual functions of bandpass and highpass according to an embodiment of the present invention
  • FIG. 5(b) is a partially enlarged view of FIG. 5(a);
  • FIG. 6 is a return loss diagram of a bulk acoustic wave resonator-based filter with dual functions of band pass and high pass according to an embodiment of the present invention.
  • first and second are used for description purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated.
  • the features defined as “first” and “second” may explicitly or implicitly include one or more of the features.
  • the meaning of “plurality” is two or more, unless otherwise specifically limited.
  • the terms “installation”, “connected”, “connected”, “fixed” and other terms should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection , Or integrally connected; it can be mechanically or electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be the communication between two components.
  • installation can be a fixed connection or a detachable connection , Or integrally connected; it can be mechanically or electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be the communication between two components.
  • the first feature “above” or “below” the second feature may include the direct contact of the first and second features, or may include the first and second features Contact not directly but through another feature between them.
  • the first feature is “above”, “above” and “above” the second feature includes that the first feature is directly above and obliquely above the second feature, or simply means that the first feature is higher in level than the second feature.
  • the first feature is “below”, “below” and “below” the second feature includes that the first feature is directly below and obliquely below the second feature, or simply means that the first feature is less horizontal than the second feature.
  • Fig. 1 is a characteristic curve diagram of a bulk acoustic wave resonator.
  • the resonator has two resonance frequency points, a series resonance point and a parallel resonance point, the series resonance point is on the left side, and its resonance frequency is f s , the parallel resonance point is on the right side, and its resonance frequency is f p , in Between the series and parallel resonant frequencies, the resonator behaves inductively, while outside the series and parallel resonant frequencies, the resonator behaves capacitively. When a mass load grows on the resonator, the resonator frequency moves downward, as shown in Figure 1 the parallel resonance frequency moves to f′ p and the series resonance frequency moves to f′ s .
  • the resonator with a mass load and the ungrown mass load The resonators work together to form a filter.
  • FIG. 2 is a topology structure diagram of a bulk acoustic wave resonator-based filter with dual functions of bandpass and highpass according to an embodiment of the present invention.
  • the filter consists of series resonators, parallel resonators, and inductors and capacitors. It should be noted that all series resonators and parallel resonators in this filter are sandwich structures, which are composed of an upper electrode, a lower electrode and a piezoelectric layer in the middle. There is an air cavity under the lower electrode to form an acoustic Reflective border.
  • the series resonator includes S1, S2, S3, S4.
  • the parallel resonator includes P1, P2, P3, but the parallel resonator needs to add a mass load in order to reduce its series-parallel resonance frequency.
  • the inductance includes L1, L2, and L3. Each inductance needs to be connected in series with the corresponding parallel resonator and then grounded to form a parallel branch.
  • each parallel bulk acoustic wave resonator in the parallel branch has a mass load, and the thickness of the mass load applied to each parallel resonator is not the same value. Different mass load thicknesses will help improve insertion loss and standing waves.
  • each parallel bulk acoustic wave resonator in the associated parallel branch is relatively similar to the series resonance frequency of each series bulk acoustic resonator of the series branch, for example, the difference is within 10 MHz.
  • the filter may also include multiple capacitors, for example, the first capacitor is connected between the inductance in the first and second parallel branches and the connection point of the bulk acoustic wave resonator, and the second capacitor is connected across Between the inductance in the second and third parallel branches and the connection point of the bulk acoustic wave resonator, etc.
  • the resonator behaves as a capacitor, and the series resonators S1, S2, S3, and S4 are equivalent to capacitors C01, C02, C03, and C04, and the parallel resonators P1 and P2 , P3 is equivalent to capacitors C1, C2, C3, the resulting filter equivalent circuit is shown in Figure 3, which can be equivalent to a high-pass filter, it should be noted that the inductance requirements of each parallel branch meet L i > 1/ ⁇ 2 C i , where i is a positive integer from 1 to N, L i represents the inductance of the inductor in the i-th parallel branch, ⁇ represents the cut-off frequency of the high-pass filter, and C i represents the The capacitance value of the equivalent capacitance of the parallel resonator in the i parallel branches.
  • Fig. 4 is a bonding wire package, in which bulk acoustic wave series resonators S1, S2, S3, S4 are integrated on chip 02, bulk acoustic wave parallel resonators p1, p2, p3 are integrated on chip 04, and three inductances L1, L2 , L3 and capacitor Cx are implemented with integrated passive device IPD (integrated passive devices) process and integrated on chip 03.
  • IPD integrated passive devices
  • Chips 02, 03, 04 are then integrated on PCB 01 by bonding wires. It should be noted that the mutual inductance between the inductances L1, L2, L3 is controlled by the distance between them.
  • FIG. 5(a) is a bulk acoustic wave resonator-based filter according to an embodiment of the present invention.
  • Figure 5(b) is a partially enlarged view of Figure 5(a).
  • the bandpass filter covers a frequency range of 2.5-2.65 GHz, the insertion loss is greater than 2.5 dB, and the adjacent band suppression is greater than 45 dB.
  • the high-pass filter coverage extends from 4 GHz to 8 GHz, and the insertion loss is greater than 2.5 dB.
  • Figure 6 is a graph of return loss.
  • the band-pass filter is at a frequency of 2.5-2.65 GHz, the return loss of two ports is greater than 15 dB, and the high-pass filter is at a frequency of 4-8 GHz, and the return loss of two ports is greater than 10 dB.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

本发明提出一种具有带通和高通双重功能的基于体声波谐振器的滤波器，包括一条串联支路和N条并联支路，N为大于等于3的正整数，其中：串联支路中包含N+1个串联体声波谐振器；每条并联支路中包含1个电感和1个并联体声波谐振器，电感第一端连接在串联支路中的两个相邻的串联体声波谐振器之间，电感第二端与该电感所在的并联支路中的并联体声波谐振器的第一端连接，该并联支路中的体声波谐振器的第二端与电学地平面连接，并联支路之间接有跨接电容。该滤波器利用体声波谐振器和电感级联形成高滚降带通和高通滤波器。

Description

具有带通和高通双重功能的基于体声波谐振器的滤波器 技术领域
本发明涉及微电子器件技术领域，特别地涉及一种具有带通和高通双重功能的基于体声波谐振器的滤波器。
背景技术
随着社会的发展，人们对手机通信、卫星定位、导航、移动互联网应用等需求日益旺盛，对于无线通讯中的频带分配要求也日愈提高。对于无线通讯频带的划分呈现出密集性、高频率和陡峭带宽的特点。为满足需求，无线通讯系统朝着多功能、多频段、多协议的方向发展。如需要当前将无线通讯中的GSM、CDMA、WCDMA、GPS、WIFI等不同通信频段功能组合在一台产品上，这对无线通讯设备中的射频前端提出了更高的挑战。特别是由于整机尺寸日渐小型化，频率信道资源日愈拥挤，不同通信频带间隔愈发接近，为保证各系统正常工作而又不互相干扰，这要求其中的滤波器能够提供优良的滤波性能，实现对收发信号的低损耗和高隔离。
在各种类型的滤波器中，薄膜体声波滤波器利用压电晶体的压电效应产生谐振。由于谐振由机械波产生，而非电磁波作为谐振来源，机械波的波长比电磁波波长短10 5倍。因此，薄膜体声波滤波器及其组成的谐振器体积相对传统的电磁滤波器尺寸大幅度减小。另一方面，由于压电晶体的晶向生长目前能够良好控制，谐振器的损耗极小，品质因数高，能够应对陡峭过渡带和低插入损耗等复杂设计要求。由于体声波滤波器具有的尺寸小、高滚降、低插损等特性，以此为核心的滤波器在通讯系统中得到了广泛的应用。
但目前，传统的单个体声波滤波器只能具有一个频带。为满足如 载波聚合的多频带同时工作的需要，一个解决技术是使用多个体声波滤波器并联，不同的并联支路具有不同的频段。然而，由此制造的器件增大了器件尺寸，增加了器件复杂度，使得产品良率和制造成本都有不同程度的恶化。另外，即使使用上述技术能够在同一滤波器中实现不同滤波频带，考虑到每个支路中的滤波器常常是带通滤波器，针对能够在同一滤波器中同时实现带通和高通滤波功能的小尺寸低成本技术，目前尚未提出有效解决方案。
发明内容
为了在同一滤波器中同时实现带通和高通滤波功能，本发明提出一种具有带通和高通双重功能的基于体声波谐振器的滤波器。
本发明提出的具有带通和高通双重功能的基于体声波谐振器的滤波器，包括一条串联支路和N条并联支路，N为大于等于3的正整数，其中：所述串联支路中包含N+1个串联体声波谐振器；每条所述并联支路中包含1个电感和1个并联体声波谐振器，所述电感第一端连接在所述串联支路中的两个相邻的串联体声波谐振器之间，所述电感第二端与该电感所在的并联支路中的并联体声波谐振器的第一端连接，该并联支路中的体声波谐振器的第二端与电学地平面连接。
可选地，所述串联支路中，各个串联体声波谐振器的串联谐振频率相同。
可选地，所述并联支路中的各个并联体声波谐振器具有质量负载，各并联谐振器所加质量负载厚度不为同一值。
可选地，所属并联支路中的各个并联体声波谐振器的并联谐振频率和串联支路各串联体声波谐振器的串联谐振频率差值在10MHz之内。
可选地，相邻的所述并联支路中的电感之间具有互感。
可选地，所述滤波器包含单个电容，该电容跨接在一组相邻并联支路中的电感与体声波谐振器的连接点之间。
可选地，所述滤波器可以包含多个电容，每个电容跨接在各组相邻并联支路中的电感与体声波谐振器的连接点之间。
可选地，所述电感、电容用集成无源器件工艺实现。
可选地，各所述并联支路中的电感满足如下公式：L i>1/ω 2C i其中，i为从1到N之间的正整数，L i表示第i条并联支路中所述电感的电感值，ω表示高通滤波器截止频率，C i表示第i条并联支路中所述并联谐振器的等效电容的电容值。
由上可知，本发明提出的具有带通和高通双重功能的基于体声波谐振器的滤波器，用体声波谐振器和电感级联形成高滚降带通和高通滤波器，由串联谐振器、并联谐振器以及电感、电容组成，各并联支路的电感之间存在互感，同时对各电感值的选择有一定要求，当满足一定条件时，可以同时形成高滚降带通和高通滤波器。
附图说明
附图用于更好地理解本发明，不构成对本发明的不当限定。其中：
图1为体声波谐振器特性曲线图；
图2为本发明实施例的具有带通和高通双重功能的基于体声波谐振器的滤波器的拓扑结构图；
图3为本发明实施例的具有带通和高通双重功能的基于体声波谐振器的滤波器在工作频率高于并联谐振频率条件下的等效电路图；
图4为键合线封装效果图；
图5(a)为本发明实施例的具有带通和高通双重功能的基于体声波谐振器的滤波器的插入损耗图，图5(b)为图5(a)的局部放大图；
图6为本发明实施例的具有带通和高通双重功能的基于体声波谐振器的滤波器的回波损耗图。
具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，旨在用于解释本发明，而不能理解为对本发明的限制。
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本发明中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。
在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
图1为体声波谐振器特性曲线图。谐振器具有两个谐振频点,分别为一个串联谐振点和一个并联谐振点,串联谐振点在左侧,其谐振频率为f s，并联谐振点在右侧，其谐振频率为f p，在串联和并联谐振频点之间，谐振器表现为电感特性，而在串联和并联谐振频点之外，谐振器表现为电容特性。当谐振器上生长有质量负载时，谐振器频率向下移动，如图1并联谐振频率移动到f′ p，串联谐振频率移动到f′ s，生长有质量负载的谐振器与未生长质量负载的谐振器共同作用，形成滤波器。
图2为本发明实施例的具有带通和高通双重功能的基于体声波谐振器的滤波器的拓扑结构图。如图2所示，该滤波器由串联谐振器、并联谐振器以及电感、电容组成。需要说明的是，该滤波器中的所有的串联谐振器和并联谐振器都为三明治结构，由上电极、下电极和中间的压电层组成，下电极下面有一个空气腔，以便形成声学全反射边界。串联谐振器包括S1、S2、S3、S4。并联谐振器包括P1、P2、P3，但是该并联谐振器需要添加质量负载，以便降低其串并联谐振频率。而电感包括L1、L2、L3，每个电感需要和相应的并联谐振器串联然后接地，一起形成并联支路。另外，电感L1和L2之间有互感M1，并且他们与并联谐振器相连的连接端之间串联了一个电容Cx，电感L2和L3之间有互感M2。
需要说明的是，并联支路中的各个并联体声波谐振器具有质量负 载，各并联谐振器所加质量负载厚度不为同一值。质量负载厚度不同，会有利于改善插损和驻波。
还需要说明的是，所属并联支路中的各个并联体声波谐振器的并联谐振频率和串联支路各串联体声波谐振器的串联谐振频率比较近似，例如差值在10MHz之内。
当串联谐振器工作在串联谐振点，而并联谐振器工作在并联谐振频点时，就构成了带通滤波器，而并联谐振器上串联一个电感，可以改变并联谐振器的串联谐振频点，因此可以拓宽带通滤波器的带宽，而电感之间的互感，以及跨接在一组相邻并联支路中电感与体声波谐振器的连接点之间的电容可以改善带外抑制和滚降。另外，该滤波器中还可以包含多个电容，如第一个电容跨接在第一、第二并联支路中的电感与体声波谐振器的连接点之间，第二个电容跨接在第二、第三并联支路中的电感与体声波谐振器的连接点之间，等等。
而当工作频率高于这些谐振器的并联谐振频率时，谐振器表现为电容特性，串联谐振器S1、S2、S3、S4等效为电容C01、C02、C03、C04，并联谐振器P1、P2、P3等效为电容C1、C2、C3，由此形成的滤波器等效电路为图3，这可以等效为高通滤波器,需要注意的是，各并联支路的电感要求满足L i>1/ω 2C i，其中，i为从1到N之间的正整数，L i表示第i条并联支路中所述电感的电感值，ω表示高通滤波器截止频率，C i表示第i条并联支路中所述并联谐振器的等效电容的电容值。
图4为键合线封装形式，其中体声波串联谐振器S1、S2、S3、S4集成于芯片02上，体声波并联谐振器p1、p2、p3集成于芯片04上，三个电感L1、L2、L3和电容Cx用集成无源器件IPD(integrated passive devices)工艺实现，并集成于芯片03上。IPD工艺具有高集成度、小尺寸、高Q值等特点，可以和体声波谐振器很好集成。芯片02、03、04再通过键合线方式集成于PCB 01之上。要说明的是电感L1、L2、 L3之间的互感通过它们之间的距离控制。
本发明设计了能覆盖2.5-2.65GHz频段的带通和覆盖4-8GHz的高通双频带滤波器，性能测试结果如下：图5(a)为本发明实施例的基于体声波谐振器的滤波器的插入损耗图，图5(b)为图5(a)的局部放大图。如图所示，带通滤波器覆盖频率范围为2.5-2.65GHz，插损大于2.5dB，临带抑制大于45dB，高通滤波器覆盖范围从4GHz开始，延伸到8GHz，插损大于2.5dB。两个滤波器都具有较好的带内插损和带外抑制，同时也具有较快的滚降。图6为回波损耗图，带通滤波器在频率2.5-2.65GHz内，两个端口的回波损耗大于15dB，高通滤波器在频率4-8GHz内，两个端口的回波损耗大于10dB。
上述具体实施方式，并不构成对本发明保护范围的限制。本领域技术人员应该明白的是，取决于设计要求和其他因素，可以发生各种各样的修改、组合、子组合和替代。任何在本发明的精神和原则之内所作的修改、等同替换和改进等，均应包含在本发明保护范围之内。

Claims (11)

  1. 一种具有带通和高通双重功能的基于体声波谐振器的滤波器，其特征在于，包括一条串联支路和N条并联支路，N为大于等于3的正整数，其中：
    所述串联支路中包含N+1个串联体声波谐振器；
    每条所述并联支路中包含1个电感和1个并联体声波谐振器，所述电感第一端连接在所述串联支路中的两个相邻的串联体声波谐振器之间，所述电感第二端与该电感所在的并联支路中的并联体声波谐振器的第一端连接，该并联支路中的体声波谐振器的第二端与电学地平面连接。
  2. 根据权利要求1所述的具有带通和高通双重功能的基于体声波谐振器的滤波器，其特征在于，所述串联支路中，各个串联体声波谐振器的串联谐振频率相同。
  3. 根据权利要求1所述的具有带通和高通双重功能的基于体声波谐振器的滤波器，其特征在于，所述并联支路中的各个并联体声波谐振器具有质量负载。
  4. 根据权利要求1所述的具有带通和高通双重功能的基于体声波谐振器的滤波器，其特征在于，各并联谐振器所加质量负载厚度不为同一值。
  5. 根据权利要求1所述的具有带通和高通双重功能的基于体声波谐振器的滤波器，其特征在于，所述并联支路中的各个并联体声波谐振器的并联谐振频率和串联支路各串联体声波谐振器的串联谐振频率的差值在10MHz之内。
  6. 根据权利要求1所述的具有带通和高通双重功能的基于体声波 谐振器的滤波器，其特征在于，相邻的所述并联支路中的电感之间具有互感。
  7. 根据权利要求1所述的具有带通和高通双重功能的基于体声波谐振器的滤波器，其特征在于，所述滤波器包含单个电容，该电容跨接在一组相邻并联支路中的电感与体声波谐振器的连接点之间。
  8. 根据权利要求7所述的具有带通和高通双重功能的基于体声波谐振器的滤波器，其特征在于，所述滤波器包含多个电容，每个电容跨接在各组相邻并联支路中的电感与体声波谐振器的连接点之间。
  9. 根据权利要求1所述的具有带通和高通双重功能的基于体声波谐振器的滤波器，其特征在于，所述电感用集成无源器件工艺实现。
  10. 根据权利要求7或8所述的具有带通和高通双重功能的基于体声波谐振器的滤波器，其特征在于，所述电容用集成无源器件工艺实现。
  11. 根据权利要求1所述的具有带通和高通双重功能的基于体声波谐振器的滤波器，其特征在于，各所述并联支路中的电感满足如下公式：L i>1/ω 2C i
    其中，i为从1到N之间的正整数，L i表示第i条并联支路中所述电感的电感值，ω表示高通滤波器截止频率，C i表示第i条并联支路中所述并联谐振器的等效电容的电容值。
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