WO2020107782A1 - 一种面光源芯片及其发光二极管 - Google Patents

一种面光源芯片及其发光二极管 Download PDF

Info

Publication number
WO2020107782A1
WO2020107782A1 PCT/CN2019/083915 CN2019083915W WO2020107782A1 WO 2020107782 A1 WO2020107782 A1 WO 2020107782A1 CN 2019083915 W CN2019083915 W CN 2019083915W WO 2020107782 A1 WO2020107782 A1 WO 2020107782A1
Authority
WO
WIPO (PCT)
Prior art keywords
chip
layer
light source
surface light
source chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/083915
Other languages
English (en)
French (fr)
Inventor
杨勇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Technology Co Ltd
Priority to US16/485,434 priority Critical patent/US20210336086A1/en
Publication of WO2020107782A1 publication Critical patent/WO2020107782A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Definitions

  • the invention relates to the technical field of light-emitting diodes, in particular to a surface light source chip and its light-emitting diodes.
  • ultra-narrow-edge miniLEDs are also called sub-millimeter light-emitting diodes or surface light sources.
  • surface light sources Many companies are optimistic. It has many advantages such as flexible and flexible, low power consumption, high brightness, high dynamic contrast and narrow borders, and is favored by most manufacturers.
  • miniLED also faces some problems that need to be overcome in terms of optical performance, such as low light output efficiency, uneven light mixing, and high cost. It has always plagued the industry. Due to the need for cost control, the surface light source needs to use as few chips as possible to achieve normal backlight brightness display. However, the increase in the pitch between adjacent chips will cause uneven light mixing.
  • DBR Bragg reflection layer
  • the reflection of this reflection layer has angular directivity, and the reflected light intensity in the direction of large viewing angle is weak, resulting in uneven light mixing, which has not yet been solved by people. the way.
  • the present invention uses an ODR layer (Omni-Directional) on the surface light source chip Reflector (full-angle reflective film layer) replaces the DBR layer, which makes the chip's light intensity distribution more uniform in the range of light angle, and improves the uniformity of light mixing on the whole surface of the surface light source.
  • ODR layer Ortho-Directional
  • full-angle reflective film layer replaces the DBR layer, which makes the chip's light intensity distribution more uniform in the range of light angle, and improves the uniformity of light mixing on the whole surface of the surface light source.
  • a surface light source chip including a sapphire substrate, an N-type GaN buffer layer under the sapphire substrate, and a chip positive region and a chip negative region formed under the N-type GaN buffer layer, wherein the chip
  • the positive electrode region includes an N-type GaN layer, an MQW (multi-quantum well) light emitting layer, an ODR layer, and a chip positive electrode in order from top to bottom.
  • the chip negative electrode region includes a chip negative electrode.
  • the ODR layer includes a semiconductor material layer, a refractive layer and a metal layer in order from top to bottom.
  • the semiconductor material layer is a GaN layer.
  • the refractive layer is an ITO (indium tin oxide) layer or a microporous oxide film.
  • ITO indium tin oxide
  • the refractive layer is an ITO (indium tin oxide) layer or a microporous oxide film.
  • the thickness of the refractive layer satisfies ⁇ /(4n), wherein ⁇ is the wavelength and n is the refractive index of the refractive layer.
  • the metal layer material is a conductivity material, including gold-nickel mixture or silver.
  • below the positive electrode of the chip is a positive metal electrode pad
  • below the negative electrode of the chip is a negative metal electrode pad
  • a light-emitting diode including the surface light source chip of any one of the above.
  • the light emitting diode further includes a substrate and a fluorescent film
  • the substrate is used to carry the surface light source chip
  • the fluorescent film covers the substrate and the surface light source chip.
  • the surface light source chips are arranged on the substrate at equal intervals.
  • the present invention provides a surface light source chip by using a full-angle reflective film layer ODR on the surface light source chip instead of the Bragg reflective film layer DBR, so that the light intensity distribution of the chip is more uniform in the range of light angle Overall improve the uniformity of light mixing on the whole surface of the surface light source.
  • the DBR layer is mostly made of insulating material, and its conductivity and heat dissipation performance are poor, making the surface light source chip prone to light saturation under high current conditions.
  • the ODR layer has a higher reflectivity, and the reflectivity basically does not change with the change of the incident angle, so as to avoid the short-wavelength reflectance near the positive viewing angle and the low light reflectivity caused by the frontal conditions. The problem of reducing and affecting the uniformity of chromaticity in the full angle range.
  • FIG. 1 is a schematic structural diagram of a surface light source chip according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural diagram of a light-emitting diode according to an embodiment of the present invention.
  • the first feature “above” or “below” the second feature may include the direct contact of the first and second features, or may include the first and second features Contact not directly but through another feature between them.
  • the first feature is “above”, “above” and “above” the second feature includes that the first feature is directly above and obliquely above the second feature, or simply means that the first feature is higher in level than the second feature.
  • the first feature is “below”, “below” and “below” the second feature includes that the first feature is directly below and obliquely below the second feature, or simply means that the first feature is less horizontal than the second feature.
  • a surface light source chip 100 including a sapphire substrate 1, an N-type GaN buffer layer 2 under the sapphire substrate 1, and a chip formed under the N-type GaN buffer layer 2 A positive electrode region 10 and a chip negative electrode region 20, wherein the chip positive electrode region 10 includes an N-type GaN layer 3, an MQW light emitting layer 4, an ODR layer 5, and a chip positive electrode 6 from top to bottom, and the chip negative electrode region 20 includes a chip Negative electrode 7.
  • the ODR layer 5 includes a semiconductor material layer 51, a refractive layer 52, and a metal layer 53 in this order from top to bottom.
  • the semiconductor material layer 51 is a GaN layer.
  • GaN materials have a series of advantages such as wide band gap, high electron mobility, high thermal conductivity, and high stability.
  • the refractive layer 52 is an ITO layer or a microporous oxide film.
  • the thickness of the refractive layer 52 satisfies ⁇ /(4n), where ⁇ is the wavelength and n is the refractive index of the refractive layer 52.
  • the material of the metal layer 53 is a conductivity material, including a gold-nickel mixture or silver, preferably silver, which can be used as a highly reflective metal to form an ODR structure, which improves the brightness of the chip.
  • a positive metal electrode pad 61 is below the positive electrode 6 of the chip, and a negative metal electrode pad 71 is below the negative electrode 7 of the chip.
  • a light emitting diode including the surface light source chip 100 of any one of the above.
  • the LED further includes a substrate 200 and a fluorescent film 300.
  • the substrate 200 is used to carry the surface light source chip 100, and the fluorescent film 300 covers the substrate 200 and the surface light source chip 100.
  • the fluorescent film 300 may be in the form of encapsulating glue, such as fluorescent glue doped with fluorescent powder.
  • the surface light source chips 100 are arranged on the substrate 200 at equal intervals.
  • the present invention provides a surface light source chip by using a full-angle reflective film layer ODR on the surface light source chip instead of the Bragg reflective film layer DBR, so that the light intensity distribution of the chip is more uniform in the range of light angle
  • the uniformity of light mixing across the surface light source is improved to ensure a better light mixing effect and higher luminous efficiency when the surface light source is arranged in a large pitch chip.
  • the DBR layer is mostly made of insulating material, and its conductivity and heat dissipation performance are poor, making the surface light source chip prone to light saturation under high current conditions.
  • the ODR layer has a higher reflectivity, and the reflectivity basically does not change with the change of the incident angle, so as to avoid the short-wavelength reflectance near the positive viewing angle and the low light reflectivity caused by the frontal conditions. The problem of reducing and affecting the uniformity of chromaticity in the full angle range.

Landscapes

  • Led Devices (AREA)

Abstract

一种面光源芯片（100）及其发光二极管。面光源芯片（100）包括蓝宝石基板（1）、蓝宝石基板（1）下方的N型GaN缓冲层（2）以及在N型GaN缓冲层（2）下方形成的芯片正极区（10）和芯片负极区（20），其中，所述芯片正极区（10）从上到下依次包括N型GaN层（3）、MQW发光层（4）、ODR层（5）及芯片正极（6），所述芯片负极区（20）包括芯片负极（7）。发光二极管包括上述面光源芯片（100）。通过在面光源芯片（100）上采用全角度反射膜层ODR层（5）替代布拉格反射膜层DBR，使芯片（100）在出光角度范围内光强分布更加均匀，从整体上提升面光源整面混光均匀性，从而保证面光源在大pitch芯片排布时较好的混光效果和较高的发光效率。

Description

一种面光源芯片及其发光二极管 技术领域
本发明涉及发光二极管技术领域，特别涉及一种面光源芯片及其发光二极管。
 背景技术
随着显示面板拼接技术的发展及消费者对液晶显示电视（LCD TV）产品外观档次的提升，超窄边miniLED又称为次毫米发光二极管或面光源，作为下一代显示技术被LED产业链中诸多企业看好。其有着柔性可弯曲、低功耗、高亮度、高动态对比度和窄边框等诸多优势，受到多数厂商的青睐。然而，miniLED在光学表现上也面临着一些需要克服的问题，比如出光效率较低、混光不均匀以及成本较高等问题也一直困扰着产业界。由于成本控制的需要，面光源需要用尽可能少的芯片实现正常的背光亮度显示，然而相邻芯片之间距离（pitch）的增大会带来混光的不均匀，常用的芯片膜层结构中多采用DBR（布拉格）反射层，但此种反射层对光线的反射带有角度方向性，大视角方向反射光强度较弱，从而造成混光不均匀，对此人们暂未有较好的解决方式。
 技术问题
为解决芯片膜层结构中DBR层（布拉格反射层）大视角方向反射光强度较弱造成混光不均匀，本发明在面光源芯片上采用ODR层(Omni-Directional Reflector，全角度反射膜层)替代DBR层，使芯片在出光角度范围内光强分布更加均匀，从整体上提升面光源整面混光均匀性。
 技术解决方案
为了实现上述目的，本发明采用了如下的技术方案：
本发明的一实施例中，提供一种面光源芯片包括蓝宝石基板、蓝宝石基板下方的N型GaN缓冲层以及在N型GaN缓冲层下方形成的芯片正极区和芯片负极区，其中，所述芯片正极区从上到下依次包括N型GaN层、MQW（多量子阱）发光层、ODR层及芯片正极，所述芯片负极区包括芯片负极。
进一步的，其中所述ODR层从上到下依次包括半导体材料层、折射层和金属层。
进一步的，其中所述半导体材料层为GaN层。
进一步的，其中所述折射层为ITO(氧化铟锡，Indium tin oxide)层或微孔氧化物薄膜。折射率的数值越小，经折射的光偏转越小，故选用较低折射率的材料为折射层。
进一步的，其中所述折射层的厚度满足λ/（4n），其中λ为波长、n为所述折射层折射率。
进一步的，其中所述金属层材料为电导率材料，包括金镍混合物或银。
进一步的，其中所述芯片正极下方为正极金属电极焊盘，所述芯片负极下方为负极金属电极焊盘。
本发明的另一实施例中，提供一种发光二极管，包括上述任一项的所述面光源芯片。
进一步的，其中所述发光二极管还包括基板和荧光薄膜，基板用于承载所述面光源芯片，荧光薄膜覆盖所述基板及所述面光源芯片。
进一步的，其中所述面光源芯片等间距设置于所述基板上。
 有益效果
区别于现有技术的情况，本发明通过提供一种面光源芯片，在面光源芯片上采用全角度反射膜层ODR替代布拉格反射膜层DBR，使芯片在出光角度范围内光强分布更加均匀，从整体上提升面光源整面混光均匀性。
同时，DBR层多为绝缘材料构成，其导电性能和散热性能较差，使得面光源芯片在大电流条件下易产生光量饱和现象。ODR层相对于DBR层而言，其在具备较高反射率的同时，反射率基本不随入射角的变化而变化，从而避免在接近正视角条件下短波长反射率较低造成正视条件下光效的降低并影响全角度范围内色度的均匀性的问题。
 附图说明
图1 是本发明一种实施方式的面光源芯片的结构示意图；
图2 是本发明一种实施方式的发光二极管的结构示意图。
图中部件标识如下：
1蓝宝石基板、2N型GaN缓冲层、3N型GaN层、4MQW发光层、
5ODR层、6芯片正极、7芯片负极，
10芯片正极区、20芯片负极区，
51半导体材料层、52折射层、53金属层，
61正极金属电极焊盘、71负极金属电极焊盘，
100面光源芯片、200基板、300荧光薄膜。
 本发明的实施方式
在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
请参阅图1所示，本发明的一实施例中，提供一种面光源芯片100包括蓝宝石基板1、蓝宝石基板1下方的N型GaN缓冲层2以及在N型GaN缓冲层2下方形成的芯片正极区10和芯片负极区20，其中，所述芯片正极区10从上到下依次包括N型GaN层3、MQW发光层4、ODR层5及芯片正极6，所述芯片负极区20包括芯片负极7。
其中所述ODR层5从上到下依次包括半导体材料层51、折射层52和金属层53。
其中所述半导体材料层51为GaN层。GaN材料具有宽带隙、高电子迁移率、高热导率、高稳定性等一系列优点。
其中所述折射层52为ITO层或微孔氧化物薄膜。折射率的数值越小，经折射的光偏转越小，故选用较低折射率的材料为折射层52。
其中所述折射层52的厚度满足λ/（4n），其中λ为波长、n为所述折射层52折射率。
其中所述金属层53材料为电导率材料，包括金镍混合物或银，优选为银，可以作为形成ODR结构的高反射金属，提高了芯片的亮度。
其中所述芯片正极6下方为正极金属电极焊盘61，所述芯片负极7下方为负极金属电极焊盘71。
请参阅图2所示，本发明的另一实施例中，提供一种发光二极管，包括上述任一项的所述面光源芯片100。
其中所述发光二极管还包括基板200和荧光薄膜300，基板200用于承载所述面光源芯片100，荧光薄膜300覆盖所述基板200及所述面光源芯片100。荧光薄膜300可以是封装胶形式，如掺有荧光粉的荧光胶。
其中所述面光源芯片100等间距设置于所述基板200上。
区别于现有技术的情况，本发明通过提供一种面光源芯片，在面光源芯片上采用全角度反射膜层ODR替代布拉格反射膜层DBR，使芯片在出光角度范围内光强分布更加均匀，从整体上提升面光源整面混光均匀性，从而保证面光源在大pitch芯片排布时较好的混光效果和较高的发光效率。
同时，DBR层多为绝缘材料构成，其导电性能和散热性能较差，使得面光源芯片在大电流条件下易产生光量饱和现象。ODR层相对于DBR层而言，其在具备较高反射率的同时，反射率基本不随入射角的变化而变化，从而避免在接近正视角条件下短波长反射率较低造成正视条件下光效的降低并影响全角度范围内色度的均匀性的问题。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (10)

  1. 一种面光源芯片，包括蓝宝石基板、蓝宝石基板下方的N型GaN缓冲层以及在N型GaN缓冲层下方形成的芯片正极区和芯片负极区，其中，所述芯片正极区从上到下依次包括N型GaN层、MQW发光层、ODR层及芯片正极，所述芯片负极区包括芯片负极。
  2. 如权利要求1所述的一种面光源芯片，其中，所述ODR层从上到下依次包括半导体材料层、折射层和金属层。
  3. 如权利要求2所述的一种面光源芯片，其中，所述半导体材料层为GaN层。
  4. 如权利要求2所述的一种面光源芯片，其中，所述折射层为ITO层或微孔氧化物薄膜。
  5. 如权利要求4所述的一种面光源芯片，其中，所述折射层的厚度满足λ/（4n），其中λ为波长、n为所述折射层折射率。
  6. 如权利要求2所述的一种面光源芯片，其中，所述金属层材料为电导率材料，包括金镍混合物或银。
  7. 如权利要求1所述的一种面光源芯片，其中，所述芯片正极下方为正极金属电极焊盘，所述芯片负极下方为负极金属电极焊盘。
  8. 一种发光二极管，其中包括如权利要求1所述的所述面光源芯片。
  9. 如权利要求8所述的一种发光二极管，其中，还包括：
    基板，用于承载所述面光源芯片；
    荧光薄膜，覆盖所述基板及所述面光源芯片。
  10. 如权利要求9所述的一种发光二极管，其中，所述面光源芯片等间距设置于所述基板上。
PCT/CN2019/083915 2018-11-30 2019-04-23 一种面光源芯片及其发光二极管 Ceased WO2020107782A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/485,434 US20210336086A1 (en) 2018-11-30 2019-04-23 Surface light source chip and light emitting diode thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201811458791.7A CN109545936A (zh) 2018-11-30 2018-11-30 一种面光源芯片及其发光二极管
CN201811458791.7 2018-11-30

Publications (1)

Publication Number Publication Date
WO2020107782A1 true WO2020107782A1 (zh) 2020-06-04

Family

ID=65852010

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/083915 Ceased WO2020107782A1 (zh) 2018-11-30 2019-04-23 一种面光源芯片及其发光二极管

Country Status (3)

Country Link
US (1) US20210336086A1 (zh)
CN (1) CN109545936A (zh)
WO (1) WO2020107782A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109545936A (zh) * 2018-11-30 2019-03-29 武汉华星光电技术有限公司 一种面光源芯片及其发光二极管

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080173885A1 (en) * 2006-02-20 2008-07-24 Yuichi Kuromizu Semiconductor light-emitting device and method of manufacturing the same
CN101645474A (zh) * 2008-08-07 2010-02-10 晶元光电股份有限公司 光电元件及其制造方法、背光模块装置和照明装置
CN103489977A (zh) * 2013-09-29 2014-01-01 映瑞光电科技(上海)有限公司 具有全方位反射镜的发光二极管及其相应的制造方法
CN105810791A (zh) * 2016-05-18 2016-07-27 厦门市三安光电科技有限公司 倒装led芯片的制作方法
CN109545936A (zh) * 2018-11-30 2019-03-29 武汉华星光电技术有限公司 一种面光源芯片及其发光二极管

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1750310A3 (en) * 2005-08-03 2009-07-15 Samsung Electro-Mechanics Co., Ltd. Omni-directional reflector and light emitting diode adopting the same
CN102097554A (zh) * 2010-12-21 2011-06-15 天津工业大学 一种GaN基单芯片白光发光二极管及其制备方法
CN102185061A (zh) * 2011-04-06 2011-09-14 北京大学 一种led结构及其制备方法
CN105789402B (zh) * 2016-05-17 2019-02-19 厦门市三安光电科技有限公司 倒装led芯片的制作方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080173885A1 (en) * 2006-02-20 2008-07-24 Yuichi Kuromizu Semiconductor light-emitting device and method of manufacturing the same
CN101645474A (zh) * 2008-08-07 2010-02-10 晶元光电股份有限公司 光电元件及其制造方法、背光模块装置和照明装置
CN103489977A (zh) * 2013-09-29 2014-01-01 映瑞光电科技(上海)有限公司 具有全方位反射镜的发光二极管及其相应的制造方法
CN105810791A (zh) * 2016-05-18 2016-07-27 厦门市三安光电科技有限公司 倒装led芯片的制作方法
CN109545936A (zh) * 2018-11-30 2019-03-29 武汉华星光电技术有限公司 一种面光源芯片及其发光二极管

Also Published As

Publication number Publication date
US20210336086A1 (en) 2021-10-28
CN109545936A (zh) 2019-03-29

Similar Documents

Publication Publication Date Title
CN105588010A (zh) 发光模块、包括模块的背光单元及包括该单元的显示装置
US10483431B2 (en) Light source module and display device
US20210208330A1 (en) Light-emitting device and method for fabricating same
US20210080785A1 (en) Backlight module
CN106299076A (zh) 一种量子点发光元件、背光模组和显示装置
JP2019505081A (ja) バックライトモジュール
US10707390B1 (en) Area light source display module
CN105425469A (zh) 一种背光模组及其制作方法、显示装置
CN115347015A (zh) 一种发光元件及显示装置
JP2006237217A (ja) 半導体発光装置及び面発光装置
TWI336139B (en) Light emitting diode having enhanced side emitting capability
WO2021134571A1 (zh) 一种微型发光二极管芯片及其制作方法和显示装置
CN203771224U (zh) 一种显示装置及其背光模组
CN109581744A (zh) 背光模组和显示装置
WO2020107782A1 (zh) 一种面光源芯片及其发光二极管
CN109638137A (zh) 倒装led芯片及直下式背光模组
CN210805814U (zh) 一种用于背光显示的倒装led芯片
CN100468165C (zh) 发光二极管及采用该发光二极管的背光模组
CN112698526A (zh) 一种液晶显示面板和液晶显示器
CN119781213B (zh) 一种液晶显示器
US10665764B2 (en) Micro lighting device
CN110783433A (zh) 发光装置与液晶显示器
JP2001044491A (ja) Ｌｅｄ及びその製造方法
CN117410416A (zh) 发光芯片、发光芯片的制作方法以及显示装置
CN213877358U (zh) 一种背光模组

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19888792

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19888792

Country of ref document: EP

Kind code of ref document: A1