WO2020103094A1 - Oled显示面板 - Google Patents
Oled显示面板Info
- Publication number
- WO2020103094A1 WO2020103094A1 PCT/CN2018/116994 CN2018116994W WO2020103094A1 WO 2020103094 A1 WO2020103094 A1 WO 2020103094A1 CN 2018116994 W CN2018116994 W CN 2018116994W WO 2020103094 A1 WO2020103094 A1 WO 2020103094A1
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- layer
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- display panel
- oled display
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
Definitions
- the invention relates to the field of display technology, in particular to an OLED display panel.
- OLED Organic Light-Emitting Diode
- the OLED display panel is divided into two structures of top emission and bottom emission.
- the top emission structure the light emitted by the OLED display panel is transmitted from the direction of the cathode, so the cathode of the top emission OLED display panel needs to use thin magnesium fluoride, indium zinc oxide, etc.
- These cathode materials themselves have a certain resistance value, It will cause a voltage drop, that is, it will cause the uneven voltage of each pixel of the OLED display panel, thereby affecting the uniformity of the display of the OLED display panel, and causing problems such as uneven brightness at different positions of the OLED display panel.
- An embodiment of the present invention discloses an OLED display panel, which displays more uniformly.
- An OLED display panel includes a light-emitting layer, a thin film encapsulation layer and a multilayer film structure stacked in sequence, the multilayer film structure is disposed on the thin film encapsulation layer, and the multilayer film structure is lower than the thin film
- the encapsulation layer is close to the light exit side of the OLED display panel;
- the multilayer film structure includes a multilayer film, at least one of the multilayer films has different thicknesses along the extension direction of the film, the OLED display panel
- the light transmittance of the position close to the driving chip and the light transmittance of the position of the OLED display panel far from the driving chip are both greater than 80%.
- a multi-layer film structure is provided outside the encapsulation layer of the OLED display panel, and the multi-layer film structure includes a multi-layer film, and at least one layer of the multi-layer film has different thicknesses; Multi-layer films with different thicknesses are placed in the position to generate light interference to different positions of the OLED display panel, so that the light output efficiency of different positions of different OLED display panels can be adjusted, that is, the multi-layer film structure can make different OLED display panels have Better overall brightness uniformity, less color shift at different locations and higher luminous efficiency.
- FIG. 1 is a schematic diagram of an OLED display panel according to an embodiment of the invention.
- FIG. 2 is a schematic diagram of a multilayer film structure according to an embodiment of the invention.
- FIG. 3 is a schematic diagram of another multilayer film structure according to an embodiment of the invention.
- FIG. 4 is a schematic structural diagram of an OLED display panel according to an embodiment of the invention.
- FIG. 5 is a schematic structural diagram of another OLED display panel according to an embodiment of the present invention.
- FIG. 6 is a schematic structural diagram of still another OLED display panel according to an embodiment of the present invention.
- FIG. 7 is a voltage-luminance (V-I) characteristic curve of R / G / B of a conventional OLDE display panel.
- FIG. 8 is a transmission spectrum of an OLDE display panel with a multi-layer film structure in an embodiment of the technical solution.
- an embodiment of the present technical solution provides an OLED display panel 1 that includes a light-emitting layer 2, a thin-film encapsulation layer 3, and a multilayer film structure 4 that are sequentially stacked.
- the multilayer film structure 4 is disposed on the thin film encapsulation layer 3, and the multilayer film structure 4 is closer to the light exit side of the OLED display panel 1 than the thin film encapsulation layer 3; the multilayer film structure 4 includes a multilayer film 40, At least one of the multiple layers of the film 40 has different thicknesses along the extending direction of the film 40.
- the multilayer films 40 of different thicknesses By providing multilayer films 40 of different thicknesses at different positions, light wave interference can be generated at different positions of the OLED display panel 1, so that the light extraction efficiency of different positions of different OLED display panels 1 can be adjusted, that is, the multilayer film structure can
- the different OLED display panels 1 have better overall brightness uniformity, and the color deviation at different positions of the OLED display panel 1 is smaller.
- the light transmittance and the position of the OLED display panel 1 near the driving chip The light transmittances of the positions of the OLED display panel 1 away from the driving chip are all greater than 80%.
- the light-emitting layer 2 of the OLED display panel 1 includes a cathode material (not shown), the cathode material is formed on the light-emitting side of the light-emitting layer 2, wherein the cathode material may be magnesium-silver alloy, Indium zinc oxide, etc.
- the material of the multilayer film 40 may be metal oxide, metal fluoride, metal alloy, silicon oxide, or the like.
- the multilayered film 40 includes at least one of a magnesium fluoride film layer (such as MgF 2 ), a titanium oxide film layer (such as TiO 2 ), and a silicon oxide film layer (such as SiO 2 ).
- a magnesium fluoride film layer such as MgF 2
- a titanium oxide film layer such as TiO 2
- a silicon oxide film layer such as SiO 2
- the multilayered film 40 includes multiple layers of magnesium fluoride film, multiple layers of titanium oxide film, and multiple layers of silicon oxide film.
- the magnesium fluoride film The layers, the titanium oxide thin film layer and the silicon oxide thin film layer can be alternately arranged, and the thickness of each thin film can be adjusted according to actual needs, thereby adjusting the light extraction efficiency of different parts of the OLED display panel 1.
- multiple layers of the thin film 40 include multiple layers of magnesium fluoride thin film, multiple layers of titanium oxide thin film and multiple layers of silicon oxide thin film, the magnesium fluoride thin film layer, titanium
- the oxide thin film layer and the silicon oxide thin film layer can also be arbitrarily stacked, as long as they can meet the requirements of light output efficiency.
- At least one of the multiple layers of the film 40 has a gradient thickness.
- each layer of the multilayer film 40 has a gradual thickness.
- the multi-layer template 40 it is acceptable to select one or more of the multi-layer template 40 as a film 40 with a gradual thickness, as long as the structure and thickness of the film layer at a specific position are different, and the light output efficiency can be achieved. Just adjust.
- the gradual direction of the film 40 with a gradual thickness in each layer may be the same or different, specifically Set as needed.
- the gradual direction of the film 40 with the gradual thickness of each layer is the same, and the gradual thickness of the film 40 of each layer is gradually increased along the gradual direction; for example, please refer to FIG. 2 and FIG. 2
- the multi-layer film structure 4 includes a multi-layer film 40.
- the multi-layer film 40 has a gradual thickness, and is defined from the left To the right is the gradual direction of the multi-layer film, and the thickness of the film 40 of each layer is gradually reduced along the gradual direction, that is, the thickness of the film 40 of each layer is gradually reduced from left to right .
- the gradual direction of the film 40 with a gradual thickness in each layer is the same, but in the film 40 with a gradual thickness in each layer, part of the film 40 gradually increases in thickness along the gradual direction, partly The thickness of the film 40 gradually decreases along the gradual direction, wherein the film 40 gradually increasing in thickness along the gradual direction and the film 40 gradually decreasing in thickness along the gradual direction are arranged at intervals; for example, please refer to FIG. 3 3 is a schematic diagram of another multilayer film structure according to an embodiment of the present invention.
- the multilayer film structure 4a includes a multilayer film 40a and a multilayer film 40b.
- the multilayer film 40a and the multilayer film 40b are alternately arranged.
- the cloth, the multi-layer film 40a and the multi-layer film 40b all have a gradual thickness, and the direction from the left to the right of the paper is the gradual direction of the multi-layer film 40a and the multi-layer film 40b.
- the thickness of the film 40a is gradually decreased along the gradual change direction, and the thickness of the film 40b of each layer is gradually increased from left to right, that is, the film 40a whose thickness is gradually decreased along the gradual direction They are arranged at intervals with the film 40b whose thickness gradually increases in the gradual change direction.
- the arrangement manner of the films 40 with gradual thickness of each layer may not be limited to the above-mentioned embodiment, wherein it may be a regular arrangement similar to the above-mentioned embodiment, or may be a messy arrangement Cloth way.
- the gradual direction of the film 40 with a gradual thickness of each layer may also be different.
- the gradual direction of the film 40 with a gradual thickness of each layer may also be opposite, and may also be vertical, acute angle, Obtuse angles and so on.
- the multilayer film 40a includes at least one of a magnesium fluoride film layer, a titanium oxide film layer, and a silicon oxide film layer; the multilayer film in the multilayer film 40b
- the thin film also includes at least one of a magnesium fluoride thin film layer, a titanium oxide thin film layer, and a silicon oxide thin film layer.
- the multilayer film structure in the embodiment of the technical solution mainly uses the diffraction characteristics of each thin film. Therefore, in the embodiment of the technical solution, it is only necessary to provide at least one thin film with different thicknesses.
- the thickness of each position of the multilayer film structure as a whole is not limited, that is, the thickness of the multilayer film structure as a whole may be the same or different, for example, each film of the multilayer film structure in FIG. 2 has a gradual thickness, However, at all positions of the multilayer film structure, the overall thickness of the multilayer film structure is the same; wherein, the thickness of each thin film and the tilt angle of each thin film with a gradual thickness can be adjusted To adjust the thickness of the multilayer film structure at various positions.
- the film layer design of the multilayer film structure in the embodiment of the technical solution is not limited to the above embodiment, and only at least one layer needs to have a gradual thickness, and the others can be adjusted according to design requirements.
- the light transmittance of the multilayer film structure 4 near the driving chip of the OLED display panel 1 is smaller than that of the multilayer film structure 4 away from the driving chip of the OLED display panel 1 The light transmittance of the location.
- At least one thin film with different thicknesses of the multilayer film structure can be prepared by electron beam evaporation. For example: forming a thin film with a gradual thickness of the multilayer film structure by electron beam evaporation method, wherein the substrate table provided with electron beam evaporation has an inclined bearing surface, and the shadow effect caused by the difference in height of the substrate table is used To achieve the growth of the thin film with a gradual thickness. It can be understood that the thin films of each layer of the multilayer film structure can also be prepared and formed by the method of electron beam evaporation.
- FIG. 4 is a schematic structural diagram of an OLED display panel according to an embodiment of the present invention, wherein the multilayer film structure is disposed between a cover film layer and a touch film layer; specifically, the The OLED display panel 200 includes a cover film layer 201, a multilayer film structure 202, a first optical adhesive layer 203, a first touch film layer 204, a second optical adhesive layer 205, a second touch film layer 206, a third An optical adhesive layer 207, a polarizing layer (POL) 208, a thin film encapsulation layer (TFE) 209, an OLED light emitting layer 214, a thin film transistor (TFT) 210, and a supporting film layer 211.
- a capacitive screen flexible circuit board 212 is also overlapped between the polarizing layer 208 and the first touch film layer 204, and a flip chip (COF) 213 is also overlapped on the thin film encapsulation layer 209.
- COF flip chip
- the multi-layer film structure 202 may be the multi-layer film structure described above, which will not be repeated here.
- FIG. 5 is a schematic structural diagram of another OLED display panel according to an embodiment of the present invention.
- the multilayer film structure in this embodiment is provided on a touch Between the film layer and a polarizing layer; specifically, the OLED display panel 200a includes a cover film layer 201a, a first optical adhesive layer 203a, a first touch film layer 204a, a second optical adhesive layer 205a, a Two-touch film layer 206a, third optical adhesive layer 207a, multilayer film structure 202a, polarizing layer (POL) 208a, thin film encapsulation layer (TFE) 209a, OLED light emitting layer 214a, thin film transistor (TFT) 210a, support film layer 211a .
- POL polarizing layer
- TFE thin film encapsulation layer
- TFT thin film transistor
- a capacitive screen flexible circuit board 212a is also overlapped between the polarizing layer 208a and the first touch film layer 204a, and a flip chip (COF) film 213a is also overlapped on the thin film encapsulation layer 209a.
- COF flip chip
- the multi-layer film structure 202a may be the multi-layer film structure described above, which will not be repeated here.
- FIG. 6 is a schematic structural diagram of yet another OLED display panel according to an embodiment of the present invention.
- the multilayer film structure in this embodiment is provided with a polarized light.
- Layer and a thin film encapsulation layer specifically, the OLED display panel 200b includes a cover film layer 201b, a first optical adhesive layer 203b, a first touch film layer 204b, a second optical adhesive layer 205b, a Two-touch film layer 206b, third optical adhesive layer 207b, polarizing layer (POL) 208b, multilayer film structure 202b, thin film encapsulation layer (TFE) 209b, OLED light emitting layer 214b, thin film transistor (TFT) 210b, support film layer 211b .
- POL polarizing layer
- a capacitive screen flexible circuit board 212b is also overlapped between the polarizing layer 208b and the first touch film layer 204b, and a flip chip (COF) film 213b is also overlapped on the thin film encapsulation layer 209b.
- COF flip chip
- the multi-layer film structure 202b may be the multi-layer film structure described above, which will not be repeated here.
- the OLED display panel may not be limited to the above three sets of structures.
- the multilayer film structure may also be formed at other positions of the OLED display panel, and only needs to be located at It suffices between the thin film encapsulation layer and the cover film layer.
- the multi-layer film structure can make the OLED display panel have better overall brightness uniformity, less color shift at different positions and higher luminous efficiency.
- the green light part of the OLED display panel is taken as an example to verify and explain the function of the multilayer film structure of the embodiment of the technical solution.
- the total thickness of the multilayer film structure is set to be an integer multiple of the quarter wavelength of green light, so that it can interfere with the green light band in the OLED display panel, and then the multilayer film structure selects the light exiting the green band Adjust efficiency.
- the cathode material of the OLED display panel has a certain resistance value, when the display panel emits light, the voltage drops to cause uneven brightness of the OLED display panel. For example, the position of the display panel near the driver chip is high, and the display panel is far away. The position brightness of the driver chip is low. See Figure 7.
- the multi-layer film structure with different thicknesses at different positions is provided to increase the light transmittance of a certain color, so as to improve the color deviation at different positions of the panel to a certain extent.
- the light transmittance of the multilayer film structure near the driver chip of the OLED display panel is smaller than the light transmittance of the multilayer film structure away from the driver chip of the OLED display panel To adjust the brightness of different positions of the display panel.
- the multilayer film structure includes 12 thin films, and the 12 film layers are stacked to form the multilayer film structure in this embodiment, wherein the 12 thin films are named thin film 1, thin film 2 ... thin film according to the light emitting direction of the OLED display panel, respectively 11.
- Thin film 12 each thin film has a gradual thickness.
- the far-end thickness, middle thickness, and near-end thickness in the table respectively represent the thickness of different regions of the multilayer film structure, where the far end represents the driver chip away from the OLED display panel ( The area at the IC) end, the near end means the area near the IC end, and the middle means the area between the far end and the near end.
- the materials of thin films 1, 3, 5, 7, 9, 11 are TiO 2
- the materials of thin films 2 , 6 , 8 , 10 are MgF 2
- the materials of thin films 4 and 12 are SiO 2 .
- the OLED display panel was tested in the green band, and its corresponding transmittance spectrum was obtained, as shown in FIG. 8; as can be seen from FIG. 8, corresponding to different positions of the OLED display panel, that is, whether it is the middle area of the OLED display panel , Or near-end area, or far-end area, the light transmittance of green light of OLED display panel is mostly above 95%, when the wavelength is around 550nm, the light transmittance slightly decreases, but also More than 85%, the overall difference is actually not large, that is, it has higher luminous efficiency and the overall light output is more uniform.
- each layer of the multilayer film structure of the present invention is not limited to the thickness in the above table, but should be based on design requirements such as product thickness requirements, light transmittance requirements, and light uniformity Make adjustments as required.
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Abstract
本申请公开一种OLED显示面板,包括依次层叠设置的发光层、薄膜封装层及一多层膜结构,所述多层膜结构设置于所述薄膜封装层上,并且所述多层膜结构较所述薄膜封装层靠近所述OLED显示面板的出光侧;所述多层膜结构包括多层薄膜,多层所述薄膜中的至少一层薄膜沿所述薄膜的延展方向具有不同厚度,所述OLED显示面板靠近驱动芯片的位置的透光率及所述OLED显示面板远离驱动芯片的位置的透光率均大于80%。本申请的多层膜结构能使OLED显示面板的出光均匀并维持较高的发光效率。
Description
本发明涉及显示技术领域,尤其涉及一种OLED显示面板。
有机电激光显示(Organic Light-Emitting Diode,OLED)是下一代新型显示技术和照明技术,应用前景巨大。OLED显示面板分为顶发射和底发射两种结构。在顶发射结构中,OLED显示面板发出的光从阴极方向透射出,所以顶发射OLED显示面板的阴极需要使用薄镁的氟化物、铟锌氧化物等,这些阴极材料本身具有一定的电阻值,会造成电压下降,也即会导致OLED显示面板各个像素电压不均,从而影响OLED显示面板显示的均一性,使OLED显示面板不同位置出现亮度不均等问题。
发明内容
本发明实施例公开一种OLED显示面板,其显示较为均匀。
一种OLED显示面板,包括依次层叠设置的发光层、薄膜封装层及一多层膜结构,所述多层膜结构设置于所述薄膜封装层上,并且所述多层膜结构较所述薄膜封装层靠近所述OLED显示面板的出光侧;所述多层膜结构包括多层薄膜,多层所述薄膜中的至少一层薄膜沿所述薄膜的延展方向具有不同厚度,所述OLED显示面板的靠近驱动芯片的位置的透光率及所述OLED显示面板的远离驱动芯片的位置的透光率均大于80%。
本申请实施例中,在OLED显示面板的封装层外设置有一多层膜结构,所述多层膜结构包括多层薄膜,多层所述薄膜中的至少一层具有不同厚度;通过在不同位置设置不同厚度的多层薄膜,对OLED显示面板不同位置产生光的干涉作用,从而可以对不同OLED显示面板不同位置的出光效率进行调整,即,多层膜结构可以使不同OLED显示面板均具有较好的整体亮度均匀性、不同位置的色偏较小且具有较高的发光效率。
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明实施例的一种OLED显示面板的示意图。
图2为本发明实施例的一种多层膜结构的示意图。
图3为本发明实施例的另一种多层膜结构的示意图。
图4为本发明实施例的一种OLED显示面板的结构示意图。
图5为本发明实施例的另一种OLED显示面板的结构示意图。
图6为本发明实施例的又一种OLED显示面板的结构示意图。
图7为传统的OLDE显示面板的R/G/B的电压-亮度(V-I)特性曲线。
图8为本技术方案实施例中的一加设多层膜结构的OLDE显示面板的穿透频谱。
下面将结合本发明技术方案实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
如图1所示,本技术方案实施例提供一种OLED显示面板1,所述OLED显示面板包括依次层叠设置的发光层2、薄膜封装层3及多层膜结构4,所述多层膜结构4设置于所述薄膜封装层3上,并且所述多层膜结构4较所述薄膜封装层3靠近所述OLED显示面板1的出光侧;所述多层膜结构4包括多层薄膜40,多层所述薄膜40中的至少一层薄膜沿所述薄膜40的延展方向具有 不同厚度。通过在不同位置设置不同厚度的多层薄膜40,能够对OLED显示面板1不同位置产生光波的干涉作用,从而可以对不同OLED显示面板1不同位置的出光效率进行调整,即,多层膜结构可以使不同OLED显示面板1均具有较好的整体亮度均匀性、使OLED显示面板1不同位置的色偏较小,进一步的,所述OLED显示面板1的靠近驱动芯片的位置的透光率及所述OLED显示面板1的远离驱动芯片的位置的透光率均大于80%。
可以理解,所述OLED显示面板1的发光层2包括有阴极材料(图未示),所述阴极材料形成于所述发光层2的出光侧,其中,所述阴极材料可以为镁银合金、铟锌氧化物等。
所述多层薄膜40的材质可以为金属氧化物、金属氟化物、金属合金及硅氧化物等。
优选地,多层所述薄膜40至少包括镁的氟化物薄膜层(如MgF
2)、钛氧化物薄膜层(如TiO
2)、及硅氧化物薄膜层(如SiO
2)中的一种。
可以理解的是,在一些实施例中,多层所述薄膜40包括多层镁的氟化物薄膜层、多层钛氧化物薄膜层及多层硅氧化物薄膜层,所述镁的氟化物薄膜层、钛氧化物薄膜层及硅氧化物薄膜层可以交替排布,并且,可以根据实际需要来调整每一层薄膜的厚度,进而调整OLED显示面板1不同部位的出光效率。
当然,在其他实施例中,多层所述薄膜40包括多层镁的氟化物薄膜层、多层钛氧化物薄膜层及多层硅氧化物薄膜层,所述镁的氟化物薄膜层、钛氧化物薄膜层及硅氧化物薄膜层也可以任意堆叠,只要能满足出光效率的需求即可。
在一优选的实施例中,多层所述薄膜40中的至少一层具有渐变厚度。
在一更优的实施例中,多层所述薄膜40的各层均具有渐变厚度。
在实际操作中,选择所述多层模板40中的一层或多层为具有渐变厚度的薄膜40均可,只要保证对特定位置的膜层的结构和厚度不同,进而能够起到出光效率的调整即可。
其中,在多层所述薄膜40中,当具有渐变厚度的所述薄膜40的数量大于 等于两个时,各层具有渐变厚度的所述薄膜40的渐变方向可以相同,也可以不同,具体可以根据需要设定。
在一个实施例中,各层具有渐变厚度的所述薄膜40的渐变方向相同,且各层具有渐变厚度的所述薄膜40均为沿渐变方向厚度逐渐增加;例如,请参考图2,图2是本发明实施例OLED显示面板的一种多层膜结构的示意图,所述多层膜结构4包括多层薄膜40,多层所述薄膜40均具有渐变厚度,且,定义自纸面从左到右为多层所述薄膜的渐变方向,各层所述薄膜40的厚度均为沿所述渐变方向逐渐减小,也即各层所述薄膜40的厚度均为从左到右逐渐减小。
在另一个实施例中,各层具有渐变厚度的所述薄膜40的渐变方向相同,但是,在各层具有渐变厚度的所述薄膜40中,部分所述薄膜40沿渐变方向厚度逐渐增加,部分所述薄膜40沿渐变方向厚度逐渐减小,其中,沿渐变方向厚度逐渐增加的所述薄膜40与沿渐变方向厚度逐渐减小的所述薄膜40间隔排布;例如,请参考图3,图3是本发明实施例的另一种多层膜结构的示意图,所述多层膜结构4a包括多层薄膜40a及多层薄膜40b,多层所述薄膜40a与多层所述薄膜40b交替排布,多层所述薄膜40a及多层所述薄膜40b均具有渐变厚度,且,定义自纸面从左到右为多层所述薄膜40a及多层所述薄膜40b的渐变方向,各层所述薄膜40a的厚度均为沿所述渐变方向逐渐减小,各层所述薄膜40b的厚度均为从左到右逐渐增大,也即,沿渐变方向厚度逐渐减小的所述薄膜40a与沿渐变方向厚度逐渐增大的所述薄膜40b间隔排布。
在其他实施例中,各层具有渐变厚度的所述薄膜40的排布方式也可以不限于上述实施例,其中,可以为类似上述实施例的有规律的排布方式,也可以为杂乱的排布方式。
在其他实施例中,各层具有渐变厚度的所述薄膜40的渐变方向也可以不同,例如,各层具有渐变厚度的所述薄膜40的渐变方向还可以相反,还可以垂直、呈锐角、呈钝角等等。
多层所述薄膜40a的材质参前述实施例所述。优选地,多层所述薄膜40a 中多层所述薄膜至少包括镁的氟化物薄膜层、钛氧化物薄膜层及硅氧化物薄膜层中的一种;多层所述薄膜40b中多层所述薄膜也至少包括镁的氟化物薄膜层、钛氧化物薄膜层及硅氧化物薄膜层中的一种。
可以理解,本技术方案实施例中的所述多层膜结构主要利用的是每层薄膜的衍射特性,所以,本技术方案实施例中,只需要设置至少一层薄膜的厚度不同,对所述多层膜结构整体上各个位置的厚度并没有限制,即整体上所述多层膜结构的厚度可以相同也可以不同,例如,图2中的多层膜结构的各层薄膜均具有渐变厚度,但,在所述多层膜结构的各个位置上,所述多层膜结构的整体厚度均相同;其中,可以通过调整各个所述薄膜的厚度以及调整各个具有渐变厚度的所述薄膜的倾斜角度,来调整所述多层膜结构整体上的各个位置的厚度。
可以理解,本技术方案实施例中的所述多层膜结构的膜层设计并不以上述实施例为限,只需要至少一层具有渐变厚度即可,其他都可以依设计需求调整。
在一实施例中,在小于520nm的波长范围内,多层膜结构4在靠近OLED显示面板1的驱动芯片的位置的透光率小于多层膜结构4在远离OLED显示面板1的驱动芯片的位置的透光率。
所述多层膜结构的具有不同厚度的至少一层薄膜可以通过电子束蒸镀的方法制备形成。例如:通过电子束蒸镀法形成所述多层膜结构的具有渐变厚度的薄膜,其中,设置电子束蒸镀的基片台具有一倾斜的承载面,利用基片台高度差异造成的阴影效应来实现生长所述具有渐变厚度的薄膜。可以理解,所述多层膜结构的各层所述薄膜也均可以通过电子束蒸镀的方法制备形成。
请参阅图4,图4是本发明一实施例的一种OLED显示面板的结构示意图,其中,所述多层膜结构设于一覆盖膜层与一触摸膜层之间;具体地,所述OLED显示面板200包括依次排布的覆盖膜层201、多层膜结构202、第一光学胶层203、第一触摸膜层204、第二光学胶层205、第二触摸膜层206、第三光学胶层207、偏光层(POL)208、薄膜封装层(TFE)209、OLED发光层214、薄膜晶体管(TFT)210、支撑膜层211。其中,所述偏光层208与所述第一触摸 膜层204之间还搭接有电容屏柔性电路板212,所述薄膜封装层209上还搭接有覆晶薄膜(COF)213。
所述多层膜结构202可如前所述的多层膜结构,此处不再赘述。
请参阅图5,图5是本发明实施例的另一种OLED显示面板的结构示意图,其中,本实施例与上述实施例不同的是,本实施例中所述多层膜结构设于一触摸膜层与一偏光层之间;具体地,所述OLED显示面板200a包括依次排布的覆盖膜层201a、第一光学胶层203a、第一触摸膜层204a、第二光学胶层205a、第二触摸膜层206a、第三光学胶层207a、多层膜结构202a、偏光层(POL)208a、薄膜封装层(TFE)209a、OLED发光层214a、薄膜晶体管(TFT)210a、支撑膜层211a。其中,所述偏光层208a与所述第一触摸膜层204a之间还搭接有电容屏柔性电路板212a,所述薄膜封装层209a上还搭接有覆晶薄膜(COF)213a。
所述多层膜结构202a可如前所述的多层膜结构,此处不再赘述。
请参阅图6,图6是本发明实施例的又一种OLED显示面板的结构示意图,其中,本实施例与上述实施例不同的是,本实施例中所述多层膜结构设于一偏光层与一薄膜封装层之间;具体地,所述OLED显示面板200b包括依次排布的覆盖膜层201b、第一光学胶层203b、第一触摸膜层204b、第二光学胶层205b、第二触摸膜层206b、第三光学胶层207b、偏光层(POL)208b、多层膜结构202b、薄膜封装层(TFE)209b、OLED发光层214b、薄膜晶体管(TFT)210b、支撑膜层211b。其中,所述偏光层208b与所述第一触摸膜层204b之间还搭接有电容屏柔性电路板212b,所述薄膜封装层209b上还搭接有覆晶薄膜(COF)213b。
所述多层膜结构202b可如前所述的多层膜结构,此处不再赘述。
可以理解,在其他实施例中,所述OLED显示面板还可以不以上述三组结构为限,例如,所述多层膜结构还可以形成于所述OLED显示面板的其他位置,只需要位于所述薄膜封装层与所述覆盖膜层之间即可。
本技术方案实施例中,多层膜结构可以使OLED显示面板具有较好的整 体亮度均匀性、不同位置的色偏较小且具有较高的发光效率。
以下结合实验数据,以OLED显示面板中绿光部分为例,来验证说明本技术方案实施例的多层膜结构的作用。
其中,设置所述多层膜结构的总厚度约为绿光四分一波长的整数倍,从而能够与OLED显示面板中绿光光波段发生干涉作用,进而所述多层膜结构选择对绿色波段的出光效率进行调整。
进一步的,由于OLED显示面板的阴极材料具有一定阻值,当显示面板发光时导致电压下降从而引起OLED显示面板的亮度不均,例如:显示面板靠近驱动芯片的位置亮度较高,显示面板上远离驱动芯片的位置亮度较低,见图7,传统OLDE显示面板的R/G/B的电压-亮度(V-L)特性曲线,可以看出,相同的压降,不仅造成亮度衰减不同,也容易造成色偏。
故,通过设置在不同位置有不同厚度的多层膜结构,以增加某一颜色光的透光率,以在一定程度上改善面板不同位置的色偏。本实施例中,在小于520nm的波长范围内,多层膜结构在靠近OLED显示面板的驱动芯片的位置的透光率小于多层膜结构在远离OLED显示面板的驱动芯片的位置的透光率,从而调整显示面板不同位置的亮度。
多层膜结构包括12层薄膜,12层膜层层叠设置以形成本实施例中的多层膜结构,其中按照沿着OLED显示面板发光方向将12层薄膜分别命名为薄膜1、薄膜2…薄膜11、薄膜12,每层薄膜均具有渐变的厚度,表中的远端厚度、中部厚度、近端厚度分别代表,多层膜结构不同区域的厚度,其中远端代表远离OLED显示面板驱动芯片(IC)端的区域、近端表示靠近IC端的区域,中部表示介于远端与近端之间的区域。薄膜1、3、5、7、9、11材料为TiO
2,薄膜2、6、8、10材料为MgF
2,薄膜4和薄膜12材料为SiO
2。
表1:
对OLED显示面板在绿光波段进行测试,得到其对应的透光率频谱,如图8所示;从图8可以看出,对应OLED显示面板不同位置,即,无论是OLED显示面板的中部区域,还是近端区域,或是远端区域,OLED显示面板的绿光的光透光率大部分都在95%以上,在波长为550nm左右时,光透过率稍有下降,但也都在85%以上,整体实际上差别并不大,也即具有较高的发光效率且出光整体较为均匀。
需要说明的是,本发明的所述多层膜结构的各层薄膜的厚度并不以上述表格中的厚度为限,应以设计需求,如产品厚度要求、光透光率要求、出光均匀度要求等等,进行调整。
以上所述是本发明的优选实施例,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也视为本发明的保护范围。
Claims (15)
- 一种OLED显示面板,其特征在于,包括依次层叠设置的发光层、薄膜封装层及一多层膜结构,所述多层膜结构设置于所述薄膜封装层上,并且所述多层膜结构较所述薄膜封装层靠近所述OLED显示面板的出光侧;所述多层膜结构包括多层薄膜,多层所述薄膜中的至少一层薄膜沿所述薄膜的延展方向具有不同厚度,所述OLED显示面板靠近驱动芯片的位置的透光率及所述OLED显示面板远离驱动芯片的位置的透光率均大于80%。
- 如权利要求1所述的OLED显示面板,其特征在于,在小于520nm的波长范围内,多层膜结构在靠近OLED显示面板的驱动芯片的位置的透光率小于多层膜结构在远离OLED显示面板的驱动芯片的位置的透光率。
- 如权利要求1所述的OLED显示面板,其特征在于,所述多层薄膜至少一层薄膜具有渐变厚度。
- 如权利要求3所述的OLED显示面板,其特征在于,多层所述薄膜的各层均具有渐变厚度。
- 如权利要求3所述的OLED显示面板,其特征在于,各层具有渐变厚度的所述薄膜的渐变方向相同。
- 如权利要求5所述的OLED显示面板,其特征在于,各层具有渐变厚度的所述薄膜均沿渐变方向厚度逐渐增加。
- 如权利要求5所述的OLED显示面板,其特征在于,各层具有渐变厚度的所述薄膜中,部分所述薄膜沿渐变方向厚度逐渐增加,部分所述薄膜沿渐变方向厚度逐渐减小,其中,沿渐变方向厚度逐渐增加的所述薄膜与沿渐变方向厚度逐渐减小的所述薄膜间隔排布。
- 如权利要求3所述的OLED显示面板,其特征在于,各层具有渐变厚度的所述薄膜的渐变方向相反、垂直、呈锐角或呈钝角。
- 如权利要求1所述的OLED显示面板,其特征在于,所述多层膜结构的各个位置上的厚度均相同。
- 如权利要求1所述的OLED显示面板,其特征在于,多层所述薄膜 中至少包括镁的氟化物薄膜层、钛氧化物薄膜层及硅氧化物薄膜层中的一种。
- 如权利要求10所述的OLED显示面板,其特征在于,多层所述薄膜包括多层镁的氟化物薄膜层、多层钛氧化物薄膜层及多层硅氧化物薄膜层,所述镁的氟化物薄膜层、钛氧化物薄膜层及硅氧化物薄膜层交错排布。
- 如权利要求1所述的OLED显示面板,其特征在于,所述OLED显示面板还包括层叠设置于所述封装层上的覆盖膜层、触摸膜层、偏光层。
- 如权利要求12所述的OLED显示面板,其特征在于,所述多层膜结构设于所述OLED显示面板的覆盖膜层与触摸膜层之间。
- 如权利要求12所述的OLED显示面板,其特征在于,所述多层膜结构设于触摸膜层与偏光层之间。
- 如权利要求12所述的OLED显示面板,其特征在于,所述多层膜结构设于偏光层与薄膜封装层之间。
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| CN113221779A (zh) * | 2021-05-19 | 2021-08-06 | 业泓科技(成都)有限公司 | 显示模组及电子设备 |
| CN113221779B (zh) * | 2021-05-19 | 2023-12-12 | 业泓科技(成都)有限公司 | 显示模组及电子设备 |
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