WO2020098652A1 - 光波导及其制备方法、光波导系统 - Google Patents

光波导及其制备方法、光波导系统 Download PDF

Info

Publication number
WO2020098652A1
WO2020098652A1 PCT/CN2019/117532 CN2019117532W WO2020098652A1 WO 2020098652 A1 WO2020098652 A1 WO 2020098652A1 CN 2019117532 W CN2019117532 W CN 2019117532W WO 2020098652 A1 WO2020098652 A1 WO 2020098652A1
Authority
WO
WIPO (PCT)
Prior art keywords
unit
optical waveguide
substrate
slope
layer
Prior art date
Application number
PCT/CN2019/117532
Other languages
English (en)
French (fr)
Inventor
王之奇
Original Assignee
苏州晶方半导体科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 苏州晶方半导体科技股份有限公司 filed Critical 苏州晶方半导体科技股份有限公司
Publication of WO2020098652A1 publication Critical patent/WO2020098652A1/zh

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
    • G02B6/0031—Reflecting element, sheet or layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
    • G02B6/003—Lens or lenticular sheet or layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0033—Means for improving the coupling-out of light from the light guide
    • G02B6/005—Means for improving the coupling-out of light from the light guide provided by one optical element, or plurality thereof, placed on the light output side of the light guide
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0033—Means for improving the coupling-out of light from the light guide
    • G02B6/005—Means for improving the coupling-out of light from the light guide provided by one optical element, or plurality thereof, placed on the light output side of the light guide
    • G02B6/0055—Reflecting element, sheet or layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0065—Manufacturing aspects; Material aspects

Definitions

  • the present application relates to the field of optoelectronic communication technology, for example, to an optical waveguide, a method for manufacturing the same, and an optical waveguide system.
  • optical interconnection technology is the basic technology for information transmission.
  • Optical interconnection is a technology that uses light as a carrier to transfer information to realize the interconnection of information between components or systems.
  • optical waveguides are widely used in optical interconnection between chips, between chips, and between chip modules and backplanes.
  • the optical waveguide in the related art is limited by its own structure, making it less suitable.
  • the present application provides an optical waveguide, a preparation method thereof, and an optical waveguide system, so as to achieve the purpose of enhancing the applicability of the optical waveguide itself.
  • the optical waveguide includes: an incident unit, a conduction unit and an exit unit; wherein,
  • the height of the top surface of the entrance unit is the same as the height of the top surface of the exit unit, the entrance unit includes a first reflection slope, and the first reflection slope is used to reflect light toward the conduction unit;
  • the conduction unit is located between the incident unit and the exit unit, and includes a first cladding layer on the surface of the substrate and a core layer on a side of the first cladding layer facing away from the substrate, the refraction of the core layer
  • the rate is greater than the refractive index of the first cladding layer, the height of the top surface of the core layer is less than or equal to the height of the incident unit and the exit unit, and the core layer is used to receive light reflected by the incident unit , The light exits the exit unit after being totally reflected multiple times in the core layer;
  • the exit unit includes a second reflective slope, and the second reflective slope is used to reflect the light transmitted by the conduction unit to form an exit light; the first reflective slope and the second reflective slope and the substrate The angle of the included angle is the same or different.
  • the value of the angle between the first reflective slope and the substrate is greater than 0 ° and less than 90 °;
  • the angle between the second reflective slope and the substrate has a value greater than 0 ° and less than 90 °.
  • the incident unit includes: a first confinement structure and a first reflective slope that covers at least the side wall surface of the first confinement structure;
  • the exit unit includes a second restricting structure and a second reflecting inclined surface covering at least the side wall of the second restricting structure, and a restricting groove is provided between the first reflecting inclined surface and the second reflecting inclined surface.
  • An optical waveguide preparation method includes:
  • a substrate is provided.
  • the substrate includes a plurality of functional areas and a cutting lane between adjacent functional areas.
  • the functional area is formed with an incident unit, an exit unit, and a location between the incident unit and the exit unit. Restriction groove, the height of the top surface of the entrance unit is the same as the height of the top surface of the exit unit, the entrance unit includes a first reflection slope, the exit unit includes a second reflection slope, and the first reflection slope The angle between the second reflective slope and the substrate is the same or different;
  • the height of the first cladding layer is less than the height of the top surfaces of the entrance unit and the exit unit;
  • a core layer is formed on the surface of the first cladding layer, the refractive index of the core layer is greater than the refractive index of the first cladding layer, and the height of the top surface of the core layer is less than or equal to the incidence unit and the exit The height of the unit, the core layer is used to receive the light reflected by the incident unit, and the light is emitted to the exit unit after being totally reflected multiple times in the core layer;
  • the substrate is cut along the cutting lane to obtain a single optical waveguide.
  • An optical waveguide system includes: a plurality of optical waveguides as described in any one of the above.
  • FIG. 1 is a schematic cross-sectional structure diagram of an optical waveguide provided by an embodiment of the present application.
  • FIG. 2 is a schematic diagram of a cross-sectional structure of an optical waveguide provided by another embodiment of the present application.
  • FIG. 3 is a schematic diagram of a cross-sectional structure of an optical waveguide provided by another embodiment of this application.
  • FIG. 4 is a schematic diagram of a cross-sectional structure of an optical waveguide provided by yet another embodiment of the present application.
  • FIG. 5 is a schematic cross-sectional structural diagram of an optical waveguide provided by an alternative embodiment of the present application.
  • FIG. 6 is a schematic cross-sectional structural diagram of an optical waveguide provided by another alternative embodiment of the present application.
  • FIG. 7 is a schematic cross-sectional structural diagram of an optical waveguide provided by yet another optional embodiment of the present application.
  • FIG. 8 is a schematic cross-sectional structural view of an optical waveguide provided by yet another alternative embodiment of the present application.
  • FIG. 9 is a schematic cross-sectional structural diagram of an optical waveguide provided by a specific embodiment of the present application.
  • 10-21 are schematic flowcharts of a method for manufacturing an optical waveguide provided by an embodiment of the present application.
  • the optical waveguide in the related art is limited by its own structure, making it less suitable. This is because the preparation process of the optical waveguide in the related art mainly includes nano-imprint technology and soft film transfer technology, so that the inclination angle of the incident end face and the exit end face of the optical waveguide can only be kept the same, which cannot meet the incident light angle and the outgoing light Different angles are required.
  • the nano-imprint technology uses photolithography, etching and other semiconductor planar process technologies to form a nano-imprint mold that matches the shape of the optical path in the substrate film material, such as silicon oxide or silicon nitride. Then, the nano-imprint mold is used to press the optical path in the core material on the surface of the optical waveguide.
  • the end face of the optical path needs to be a mirror surface to ensure total reflection coupling of incident light. This puts high requirements on the manufacturing process of the nanoimprint mold, and when the optical path changes, it is necessary to customize the corresponding mold, which greatly increases the cost of the optical waveguide prepared by this process.
  • Soft mold transfer technology is to create a light path on the mold, and then cover the substrate.
  • This method also has its shortcomings. First, the incident end face and the exit end face of the optical waveguide prepared by it cannot be adjusted, resulting in poor applicability. Secondly, the process has a long manufacturing process and low manufacturing efficiency, which increases the cost of the optical waveguide.
  • an embodiment of the present application provides an optical waveguide provided on the surface of a substrate, the optical waveguide including: an incident unit, a conduction unit, and an exit unit; wherein,
  • the height of the top surface of the entrance unit is the same as the height of the top surface of the exit unit, the entrance unit includes a first reflection slope, and the first reflection slope is used to reflect light toward the conduction unit;
  • the conduction unit is located between the incident unit and the exit unit, and includes a first cladding layer on the surface of the substrate and a core layer on a side of the first cladding layer facing away from the substrate, the refraction of the core layer
  • the rate is greater than the refractive index of the first cladding layer, the height of the top surface of the core layer is less than or equal to the height of the incident unit and the exit unit, and the core layer is used to receive light reflected by the incident unit , The light exits the exit unit after being totally reflected multiple times in the core layer;
  • the exit unit includes a second reflective slope, and the second reflective slope is used to reflect the light transmitted by the conduction unit to form an exit light; the first reflective slope and the second reflective slope and the substrate The angle of the included angle is the same or different.
  • the first reflecting slope of the incident unit of the optical waveguide is used to reflect the received light toward the conducting unit
  • the second reflecting slope of the exit unit of the optical waveguide is used to reflect the light transmitted by the incident unit to form the outgoing light Exit
  • the angle between the first reflective slope and the second reflective slope is the same as or different from the angle of the substrate.
  • the angle between the first reflective slope and the substrate determines how much the incident unit changes the direction of propagation of the received light
  • the angle between the second reflective slope and the substrate determines the exit angle of the exit light formed by the exit unit
  • the angle between the first reflective slope and the second reflective slope can be the same as or different from the substrate, so that the optical waveguide can meet the requirements of different light incident angles and exit angles, which increases the optical waveguide Applicability in various application scenarios.
  • the structure of the optical waveguide is suitable for the wafer-level semiconductor manufacturing process, which is beneficial to reduce the size of the optical waveguide, and makes the optical waveguide have the advantages of good consistency and high alignment accuracy.
  • FIGS. 1 and 6 which are provided by the embodiments of the present application Schematic diagram of the optical waveguide structure of the optical waveguide, which includes: an incident unit 20, a conducting unit 40 and an exit unit 30; wherein,
  • the height of the top surface of the entrance unit 20 is the same as the height of the top surface of the exit unit 30, the entrance unit 20 includes a first reflective slope 22, and the first reflective slope 22 is used to reflect light toward the conduction unit 40;
  • the conducting unit 40 is located between the incident unit 20 and the exit unit 30 and includes a first cladding layer 41 on the surface of the substrate 10 and a core layer on the side of the first cladding layer 41 facing away from the substrate 10 42.
  • the refractive index of the core layer 42 is greater than the refractive index of the first cladding layer 41.
  • the height of the top surface of the core layer 42 is less than or equal to the height of the incident unit 20 and the exit unit 30.
  • the core layer 42 is used to receive the light reflected by the incident unit 20, and the light is emitted to the exit unit 30 after being totally reflected multiple times in the core layer 42;
  • the exit unit 30 includes a second reflective slope 32, and the second reflective slope 32 is used to reflect the light transmitted by the conducting unit 40 to form an exit light; the first reflective slope 22 and the second reflective slope
  • the angle between 32 and the substrate 10 is the same or different.
  • the substrate 10 may include semiconductor elements, such as silicon or silicon germanium (SiGe) of single crystal, polycrystalline or amorphous structure; it may also include mixed semiconductor structures such as silicon carbide, indium antimonide, Lead telluride, indium arsenide, indium phosphide, gallium arsenide or gallium antimonide, alloy semiconductors or combinations thereof; it can also be silicon on insulator (SOI).
  • the substrate 10 may also include other materials, such as a multi-layer structure of an epitaxial layer or a buried layer. Although a few examples of materials that can be used as the substrate 10 are described herein, any material that can be used as the semiconductor substrate 10 falls within the spirit and scope of the present invention.
  • the material of the substrate 10 used in the optical waveguide of the present invention is not particularly limited, and any material suitable for supporting high molecular polymers can be used as the substrate 10 of the optical waveguide of the present application.
  • the substrate 10 used in some embodiments may be pyrex, such as quartz glass, borophosphosilicate glass (BPSG); or organic polymer resins, such as but not limited to polymer Ester resin (polyester resin), polycarbonate resin (polycarbonate resin), phenolic laminating resin or polyurethane resin (polyurethane resin); or a mixture of these, in addition may also be a PCB board.
  • the substrate 10 is composed of the first cladding layer 41 and the core layer 42, and the refractive index of the material forming the first cladding layer 41 is smaller than that of the material forming the core layer 42 Refractive index, because the light needs to propagate in the core layer 42 by total reflection, so it is necessary to form the case where the optical dense medium enters the optical thin medium at the interface between the core layer 42 and the first cladding layer 41. Reflection provides the necessary conditions.
  • An air layer may be on the side of the core layer 42 facing away from the first cladding layer 41, because the refractive index of the air layer is 1, which is usually less than the refractive index of most materials. Therefore, compared with the core layer 42, The air layer is also a light sparse medium, which can enable light to propagate in a total reflection manner at the interface between the core layer 42 and the air layer.
  • the angle between the first reflective slope 22 and the substrate 10 and the angle between the second reflective slope 32 and the substrate 10 refer to the acute angle formed by the reflective slope and the substrate 10 That is, the value of the angle between the first reflective slope 22 and the substrate 10 is greater than 0 ° and less than 90 °;
  • the angle between the second reflective slope 32 and the substrate 10 is greater than 0 ° and less than 90 °.
  • the value of the angle between the first reflective slope 22 and the substrate 10 may be 45 °, 30 °, 15 °, 60 °, 75 °, etc.
  • the second reflection slope 32 and the substrate 10 The value of the included angle can be 45 °, 30 °, 15 °, 60 ° and 75 °.
  • the angle between the first reflective slope 22 and the substrate 10 may be the same as the angle between the second reflective slope 32 and the substrate 10, or may be the same as the angle between the second reflective slope 32 and the substrate
  • the angle of the bottom 10 is different, and this application does not limit it.
  • the material forming the first cladding layer 41 may be polyacrylic acid ester (polyacrylate), polysiloxane (polysiloxane), polyimide (polyimide) or polycarbonate (polycarbonate) or through 3-methacryloyl
  • polyacrylic acid ester polyacrylate
  • polysiloxane polysiloxane
  • polyimide polyimide
  • polycarbonate polycarbonate
  • METS oxypropyltriethoxysilane
  • PhTES phenyltriethoxysilane
  • the material forming the core layer 42 is one or a mixture of any one of positive photoresist, negative photoresist, photosensitive polyimide resin, or photosensitive sol-gel.
  • the top surface of the core layer 42 and the top surface of the incident unit 20 are on the same horizontal plane; in FIG. 6, the height of the top surface of the core layer 42 is smaller than the top of the incident unit 20 The height of the surface.
  • the incident unit 20 includes: a first confinement structure 21 and a first reflective slope 22 covering at least the side wall surface of the first confinement structure 21;
  • the exit unit 30 includes a second restricting structure 31 and a second reflective slope 32 covering at least the side wall of the second restricting structure 31, and a restricting groove is provided between the first reflective slope 22 and the second reflective slope 32, The restriction groove is used to set the conductive unit 40.
  • the material forming the confinement structure is one of silicon, silicon oxide, silicon nitride, silicon oxynitride, quartz glass, and borophosphosilicate glass.
  • the restricting structure may also be formed by chemical vapor deposition; in addition, the restricting structure may be bonded to the substrate 10 using an adhesive such as epoxy resin. together. Alternatively, spin-coating may be used to form the confinement structure using optional silicon oxide.
  • the formation of the restriction groove may be that the restriction layer is formed first, and then the restriction layer is etched or mechanically cut or laser-cut to form the restriction groove, and the remaining restriction layer after forming the restriction groove becomes the restriction structure.
  • the first reflective slope 22 and the second reflective slope 32 are both metal slopes.
  • the metal slope has a higher reflectivity, which can improve the light energy utilization rate of incident light and outgoing light, and reduce the loss of light energy.
  • FIG. 2 and FIG. 7 are schematic cross-sectional structural views of an optical waveguide provided by another embodiment of the present application.
  • the optical waveguide further includes: a layer located on the core layer 42 facing away from the first package The second cladding 43 on the side of the layer 41;
  • the refractive index of the second cladding layer 43 is smaller than the refractive index of the core layer 42.
  • the refractive index of the second cladding layer 43 is lower than the refractive index of the core layer 42 to ensure that light can propagate in the core layer 42 by total reflection.
  • the second cladding layer 43 covers the surface of the core layer 42 and the restriction structure; in the embodiment shown in FIG. 7, the second cladding layer 43 covers the The core layer 42 faces away from the surface of the first cladding layer 41.
  • the core layer 42 is wrapped by the first cladding layer 41 and the second cladding layer 43 to avoid being exposed to the air Risk of corrosion by external impurities. Enhanced the anti-corrosion performance of the optical waveguide.
  • FIG. 3 is a schematic cross-sectional structure diagram of an optical waveguide provided by yet another embodiment of the present application.
  • the optical waveguide further includes: a reflection between the first cladding 41 and the substrate 10 Metal layer RE.
  • the reflective metal layer RE can increase the reflectivity of light propagating in the core layer 42 and improve the light energy utilization rate of the light.
  • the first reflective slope 22, the second reflective slope 32 and the reflective metal layer RE are connected to each other and are formed of the same metal layer.
  • the first reflective slope 22, the second reflective slope 32 and the reflective metal layer RE formed by the same metal layer can reduce the manufacturing process flow of the optical waveguide, help to simplify the optical waveguide process, and improve the manufacturing efficiency of the optical waveguide.
  • FIGS. 4, 5, 8 and 9 are schematic cross-sectional structural diagrams of an optical waveguide provided by yet another embodiment of the present application.
  • all The optical waveguide further includes: a first lens structure 50 and a second lens structure 60;
  • the first lens structure 50 is used to process light and transmit it to the incident unit 20;
  • the second lens structure 60 is used to process the light emitted by the emitting unit 30 and then emit it.
  • the presence of the first lens structure 50 can enable the optical waveguide to receive incident light rays with a wider range of incident angles, so that these light rays can be received by the incident unit 20 and propagated in the core layer 42 in a total reflection manner.
  • the presence of the second lens structure 60 can make the light exiting the light wave have a wider range of optional exit angles, so that the exit angle of the light waveguide can meet the requirements of subsequent optical elements.
  • the existence of the first lens structure 50 and the second lens structure 60 further improves the applicability of the optical waveguide.
  • the processing of light by the first lens structure 50 includes one or more of converging, diverging, and changing the polarization state;
  • the processing of light by the second lens structure 60 includes one or more of focusing, splitting, diverging, and changing the polarization state.
  • the lens structure may include one or any combination of a convex lens, a concave lens, a polarizing plate, and a beam splitter, so that the lens structure has a corresponding light processing function.
  • the first lens structure 50 and the second lens structure 60 are both single lenses.
  • the processing of light by the first lens structure 50 and the second lens structure 60 includes one of focusing, splitting, diverging, and changing the polarization state.
  • the first lens structure 50 and the second lens structure 60 are both lens groups formed by a combination of multiple lenses.
  • the processing of light by the first lens structure 50 and the second lens structure 60 may include convergence, beam splitting, and divergence And change one or more functions in the polarization state.
  • the present application does not limit the specific structure of the first lens structure 50 and the second lens structure 60, depending on the actual situation.
  • Embodiments of the present application also provide a method for manufacturing an optical waveguide, which is used to form the optical waveguide described in any one of the above embodiments.
  • the method for manufacturing the optical waveguide is shown in FIGS. 10-20.
  • the method for manufacturing includes:
  • a substrate 10 is provided.
  • the substrate 10 includes a plurality of functional regions 11 and a scribe line 12 between adjacent functional regions 11.
  • the functional region 11 is formed with an incident unit 20, an exit unit 30, and A restriction groove between the entrance unit 20 and the exit unit 30, the height of the top surface of the entrance unit 20 is the same as the height of the top surface of the exit unit 30, the entrance unit 20 includes a first reflective slope 22,
  • the exit unit 30 includes a second reflective slope 32, and the angle between the first reflective slope 22 and the second reflective slope 32 and the substrate 10 is the same or different;
  • FIG. 10 is a schematic top view of the substrate 10, and FIG. 11 is a schematic cross-sectional structure of FIG. 10 along the PP 'line.
  • the substrate 10 may include semiconductor elements, such as single crystal, Polycrystalline or amorphous silicon or silicon germanium (SiGe); can also include mixed semiconductor structures such as silicon carbide, indium antimonide, lead telluride, indium arsenide, indium phosphide, gallium arsenide or gallium antimonide , Alloy semiconductor or a combination thereof; it can also be silicon on insulator (SOI).
  • the substrate 10 may also include other materials, such as a multi-layer structure of an epitaxial layer or a buried layer.
  • any material that can be used as the semiconductor substrate 10 falls within the spirit and scope of the present invention.
  • the material of the substrate 10 used in the optical waveguide of the present invention is not particularly limited, and any material suitable for supporting high molecular polymers can be used as the substrate 10 of the optical waveguide of the present application.
  • the substrate 10 used in some embodiments may be pyrex, such as quartz glass, borophosphosilicate glass (BPSG); or organic polymer resins, such as but not limited to polymer Ester resin (polyester resin), polycarbonate resin (polycarbonate resin), phenolic laminating resin or polyurethane resin (polyurethane resin); or a mixture of these, in addition may also be a PCB board.
  • pyrex such as quartz glass, borophosphosilicate glass (BPSG); or organic polymer resins, such as but not limited to polymer Ester resin (polyester resin), polycarbonate resin (polycarbonate resin), phenolic laminating resin or polyurethane resin (polyurethane resin); or a mixture of these, in addition may also be a PCB board.
  • BPSG borophosphosilicate glass
  • organic polymer resins such as but not limited to polymer Ester resin (polyester resin), polycarbonate resin (polycarbonate resin), phenolic laminating resin or
  • the entrance unit 20, the exit unit 30 located on the substrate 10 and the limiting groove between the entrance unit 20 and the exit unit 30 The formation process of TH includes:
  • a semiconductor cutting process is performed on the restriction layer DL to form the restriction groove TH in the restriction layer DL, and the restriction layers DL on both sides of the restriction groove TH are the first restriction structure 21 and the second restriction, respectively Structure 31, the side of the first restriction structure 21 facing the restriction groove TH and the side of the second restriction structure 31 facing the restriction groove TH are inclined slopes;
  • the semiconductor cutting process may be a laser cutting process, It can also be a mechanical cutting process.
  • first reflective slope 22 covering at least the inclined slope surface of the first restriction structure 21, and a second reflection slope 32 covering at least the inclined slope surface of the second restriction structure 31, the first reflection slope 22 and The angle between the second reflective slope 32 and the substrate 10 is different.
  • the angle between the first reflective slope 22 and the second reflective slope 32 and the substrate 10 may be different, and of course, may be the same.
  • the formation process of the entrance unit 20, the exit unit 30 and the restriction groove TH between the entrance unit 20 and the exit unit 30 includes:
  • An etching process is performed on the limiting layer DL to form the limiting groove TH in the limiting layer DL, and the limiting layers DL on both sides of the limiting groove TH are the first limiting structure 21 and the second A restriction structure 31, the first restriction structure 21 facing the restriction groove TH side and the second restriction structure 31 facing the restriction groove TH side are inclined slopes;
  • first reflective slope 22 covering at least the inclined slope surface of the first restriction structure 21, and a second reflection slope 32 covering at least the inclined slope surface of the second restriction structure 31, the first reflection slope 22 and The angle between the second reflective slope 32 and the substrate 10 is the same.
  • the angle between the first reflective slope 22 and the second reflective slope 32 and the substrate 10 is the same.
  • the material of the limiting layer DL includes but is not limited to one of silicon, silicon oxide, silicon nitride, silicon oxynitride, quartz glass, and borophosphosilicate glass.
  • the restricting structure may also be formed by chemical vapor deposition; in addition, the restricting structure may be bonded to the substrate 10 using an adhesive such as epoxy resin. together.
  • the method of spin coating may also be used to form the limiting layer DL with optional silicon oxide, and the limiting layer DL remaining after forming the limiting groove TH becomes the limiting structure.
  • the first reflective slope 22 and the second reflective slope 32 are both metal slopes.
  • the metal slope has a higher reflectivity, which can improve the light energy utilization rate of incident light and outgoing light, and reduce the loss of light energy.
  • the first reflective slope 22 that covers at least the inclined slope surface of the first restriction structure 21 is formed, and the slope that at least covers the second restriction structure 31 is formed
  • the second reflective slope 32 of the sloped surface includes:
  • the reflective metal layer RE can increase the reflectivity of light propagating in the core layer 42 and improve the light energy utilization rate of the light.
  • S102 forming a first cladding layer 41 in the restriction groove TH, the height of the first cladding layer 41 is less than the height of the top surface of the entrance unit 20 and the exit unit 30;
  • the top surface of the core layer 42 and the top surface of the reflection unit are located on the same horizontal plane.
  • the height of the top surface of the core layer 42 may also be less than the height of the top surface of the reflective unit.
  • before cutting the substrate 10 along the cutting path 12 further includes:
  • the refractive index of the second cladding layer 43 is smaller than the refractive index of the core layer 42.
  • the refractive index of the second cladding layer 43 is lower than the refractive index of the core layer 42 to ensure that light can propagate in the core layer 42 by total reflection.
  • the core layer 42 is wrapped by the first cladding layer 41 and the second cladding layer 43, thereby avoiding the risk of being exposed to air and corroded by external impurities. Enhanced the anti-corrosion performance of the optical waveguide.
  • a second lens structure 60 is formed for processing the light emitted by the exit unit 30 and then exiting.
  • the presence of the first lens structure 50 can enable the optical waveguide to receive incident light rays with a wider range of incident angles, so that these light rays can be received by the incident unit 20 and propagated in the core layer 42 in a total reflection manner.
  • the presence of the second lens structure 60 can make the light exiting the light wave have a wider range of optional exit angles, so that the exit angle of the light waveguide can meet the requirements of subsequent optical elements.
  • the existence of the first lens structure 50 and the second lens structure 60 further improves the applicability of the optical waveguide.
  • the processing of light by the first lens structure 50 includes one or more of converging, diverging, and changing the polarization state;
  • the processing of light by the second lens structure 60 includes one or more of focusing, splitting, diverging, and changing the polarization state.
  • the lens structure may include one or any combination of a convex lens, a concave lens, a polarizing plate, and a beam splitter, so that the lens structure has a corresponding light processing function.
  • the first lens structure 50 and the second lens structure 60 are both single lenses.
  • the processing of light by the first lens structure 50 and the second lens structure 60 includes one of focusing, splitting, diverging, and changing the polarization state.
  • the first lens structure 50 and the second lens structure 60 are both lens groups formed by a combination of multiple lenses.
  • the processing of light by the first lens structure 50 and the second lens structure 60 may include convergence, beam splitting, and divergence And change one or more functions in the polarization state.
  • the present application does not limit the specific structure of the first lens structure 50 and the second lens structure 60, depending on the actual situation.
  • S104 cutting the substrate 10 along the cutting lane 12 to obtain a single optical waveguide.
  • an embodiment of the present application further provides an optical waveguide system, including a plurality of optical waveguides as described in any of the above embodiments.
  • the embodiments of the present application provide an optical waveguide, a method of manufacturing the same, and an optical waveguide system, wherein the first reflective slope 22 of the incident unit 20 of the optical waveguide is used to reflect the received light toward the conduction unit 40.
  • the second reflective slope 32 of the exit unit 30 of the optical waveguide is used to reflect the light transmitted by the incident unit 20 to form an exit light exit, and the first reflective slope 22 and the second reflective slope 32 are The angle of the included angle of the substrate 10 is the same or different.
  • the angle between the first reflective slope 22 and the substrate 10 determines how much the incident unit 20 changes the propagation direction of the received light, and the angle between the second reflective slope 32 and the substrate 10 determines the formation of the exit unit 30
  • the exit angle of the outgoing light rays, and the included angle between the first reflective slope 22 and the second reflective slope 32 and the substrate 10 may be the same or different, so that the optical waveguide can meet different light incident angles and The requirements of the exit angle increase the applicability of the optical waveguide in various application scenarios.
  • the structure of the optical waveguide is suitable for the wafer-level semiconductor manufacturing process, which is beneficial to reduce the size of the optical waveguide, and makes the optical waveguide have the advantages of good consistency and high alignment accuracy.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

一种光波导及其制备方法、光波导系统，光波导的入射单元（20）的第一反射斜面（22）用于将接收的光线反射向传导单元（40），光波导的出射单元（30）的第二反射斜面（32）用于反射入射单元（20）传输的光线，以形成出射光线出射，第一反射斜面（22）和第二反射斜面（32）与衬底（10）的夹角角度相同或不同。第一反射斜面（22）与衬底（10）的夹角决定着入射单元（20）对接收的光线的传播方向的改变程度，第二反射斜面（32）与衬底（10）的夹角决定着出射单元（30）形成的出射光线的出射角度，第一反射斜面（22）和第二反射斜面（32）与衬底（10）的夹角既可以相同，也可以不同，从而使得光波导可以满足不同的光线入射角度和出射角度的要求，增加了光波导在各个应用场景的适用性。

Description

光波导及其制备方法、光波导系统
本公开要求在2018年11月13日提交中国专利局、申请号为201811345805.4的中国专利申请的优先权，以上申请的全部内容通过引用结合在本公开中。
技术领域
本申请涉及光电子通信技术领域，例如涉及一种光波导及其制备方法、光波导系统。
背景技术
在光通信领域或光计测领域中，光互联技术是实现信息传递的基本技术。光互联是一种利用光作为传递信息的载体，实现各部件或各系统之间信息互连的技术。
光波导作为一种重要的光互联传输介质，广泛应用于芯片内、芯片间与芯片模块以及背板之间的光互联。相关技术中的光波导受限于其自身结构，使得其适用性较差。
发明内容
本申请提供一种光波导及其制备方法、光波导系统，以实现增强光波导自身适用性的目的。
本申请实施例提供的技术方案如下：
一种光波导，设置于衬底表面，所述光波导包括：入射单元、传导单元和出射单元；其中，
所述入射单元的顶表面高度与所述出射单元的顶表面高度相同，所述入射单元包括第一反射斜面，所述第一反射斜面用于将光线反射向所述传导单元；
所述传导单元位于所述入射单元与所述出射单元之间，包括位于衬底表面的第一包层和位于所述第一包层背离衬底一侧的芯层，所述芯层的折射率大于所述第一包层的折射率，所述芯层的顶表面的高度小于或等于所述入射单元和所述出射单元的高度，所述芯层用于接收所述入射单元反射的光线，所述光线在所述芯层内多次全反射后向所述出射单元出射；
所述出射单元包括第二反射斜面，所述第二反射斜面用于反射所述传导单元传输的光线，形成出射光线出射；所述第一反射斜面与所述第二反射斜面与所述衬底的夹角的角度相同或不同。
可选的，所述第一反射斜面与所述衬底的夹角的取值大于0°，且小于90°；
所述第二反射斜面与所述衬底的夹角的取值大于0°，且小于90°。
可选的，所述入射单元包括：第一限制结构和至少覆盖所述第一限制结构侧壁表面的第一反射斜面；
所述出射单元包括第二限制结构和至少覆盖所述第二限制结构侧壁的第二反射斜面，所述第一反射斜面和第二反射斜面之间具有限制凹槽，所述限制凹槽用于设置所述传导单元。
一种光波导的制备方法，包括：
提供衬底，所述衬底包括多个功能区和位于相邻所述功能区之间的切割道，所述功能区上形成有入射单元、出射单元和位于所述入射单元和出射单元之间的限制凹槽，所述入射单元的顶表面高度与所述出射单元的顶表面高度相同，所述入射单元包括第一反射斜面，所述出射单元包括第二反射斜面，所述第一反射斜面和第二反射斜面与所述衬底的夹角的角度相同或不同；
在所述限制凹槽中形成第一包层，所述第一包层的高度小于所述入射单元及所述出射单元的顶表面高度；
在所述第一包层表面形成芯层，所述芯层的折射率大于所述第一包层的折射率，所述芯层的顶表面的高度小于或等于所述入射单元和所述出射单元的高度，所述芯层用于接收所述入射单元反射的光线，所述光线在所述芯层内多次全反射后向所述出射单元出射；
沿所述切割道对所述衬底进行切割，以获得单个光波导。
一种光波导系统，包括：多个如上述任一项所述的光波导。
附图说明
图1为本申请的一个实施例提供的一种光波导的剖面结构示意图；
图2为本申请的另一个实施例提供的一种光波导的剖面结构示意图；
图3为本申请的又一个实施例提供的一种光波导的剖面结构示意图；
图4为本申请的再一个实施例提供的一种光波导的剖面结构示意图；
图5为本申请的一个可选实施例提供的一种光波导的剖面结构示意图；
图6为本申请的另一个可选实施例提供的一种光波导的剖面结构示意图；
图7为本申请的又一个可选实施例提供的一种光波导的剖面结构示意图；
图8为本申请的再一个可选实施例提供的一种光波导的剖面结构示意图；
图9为本申请的一个具体实施例提供的一种光波导的剖面结构示意图；
图10-图21为本申请的一个实施例提供的一种光波导的制备方法的流程示意图。
具体实施方式
正如背景技术所述，相关技术中的光波导受限于其自身结构，使得其适用性较差。这是因为相关技术中的光波导的制备工艺主要包括纳米压印技术和软膜转印技术，使得光波导的入射端面和出射端面的倾斜角度只能保持一致，无法满足入射光线角度和出射光线角度不同的要求。
另外，纳米压印技术是利用光刻、刻蚀等半导体平面工艺技术在基底表面的压膜材料，例如氧化硅或氮化硅中形成与光路形状相匹配的纳米压印模具。然后利用纳米压印模具在光波导表面的芯层材料中压制出光路。而光路的端面需要为镜面，以保证入射光的全反射耦合。这就对纳米压印模具的制作工艺提出了很高的要求，并且当光路改变时，需要定制相应的模具，使得该工艺制备的光波导的成本大大增加。
软模转印技术是在模具上制造好光路之后，再覆盖结合到底材之上。该方法也有它的缺点，首先其制备的光波导的入射端面和出射端面仍然无法调节，导致适用性较差；其次该工艺的制程较长，制备效率较低，增加了光波导的成本。
有鉴于此，本申请实施例提供了一种光波导，设置于衬底表面，所述光波导包括：入射单元、传导单元和出射单元；其中，
所述入射单元的顶表面高度与所述出射单元的顶表面高度相同，所述入射单元包括第一反射斜面，所述第一反射斜面用于将光线反射向所述传导单元；
所述传导单元位于所述入射单元与所述出射单元之间，包括位于衬底表面 的第一包层和位于所述第一包层背离衬底一侧的芯层，所述芯层的折射率大于所述第一包层的折射率，所述芯层的顶表面的高度小于或等于所述入射单元和所述出射单元的高度，所述芯层用于接收所述入射单元反射的光线，所述光线在所述芯层内多次全反射后向所述出射单元出射；
所述出射单元包括第二反射斜面，所述第二反射斜面用于反射所述传导单元传输的光线，形成出射光线出射；所述第一反射斜面与所述第二反射斜面与所述衬底的夹角的角度相同或不同。
所述光波导的入射单元的第一反射斜面用于将接收的光线反射向传导单元，所述光波导的出射单元的第二反射斜面用于反射所述入射单元传输的光线，以形成出射光线出射，并且所述第一反射斜面和第二反射斜面与所述衬底的夹角的角度相同或不同。所述第一反射斜面与衬底的夹角决定着入射单元对接收的光线的传播方向的改变程度，所述第二反射斜面与衬底的夹角决定着出射单元形成的出射光线的出射角度，而所述第一反射斜面和第二反射斜面与所述衬底的夹角既可以相同，也可以不同，从而使得光波导可以满足不同的光线入射角度和出射角度的要求，增加了光波导在各个应用场景的适用性。
另外，所述光波导的结构适用于晶圆级半导体制备工艺，有利于降低光波导的尺寸，并使光波导具有一致性好和对准精度高的优点。
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。
在本申请实施例提供的附图中的坐标系均是以衬底指向入射单元为Z轴正向建立的右手坐标系，参考图1和图6，图1和图6为本申请实施例提供的光波导的结构示意图，该光波导包括：入射单元20、传导单元40和出射单元30；其中，
所述入射单元20的顶表面高度与所述出射单元30的顶表面高度相同，所述入射单元20包括第一反射斜面22，所述第一反射斜面22用于将光线反射向所述传导单元40；
所述传导单元40位于所述入射单元20与所述出射单元30之间，包括位于衬底10表面的第一包层41和位于所述第一包层41背离衬底10一侧的芯层42， 所述芯层42的折射率大于所述第一包层41的折射率，所述芯层42的顶表面的高度小于或等于所述入射单元20和所述出射单元30的高度，所述芯层42用于接收所述入射单元20反射的光线，所述光线在所述芯层42内多次全反射后向所述出射单元30出射；
所述出射单元30包括第二反射斜面32，所述第二反射斜面32用于反射所述传导单元40传输的光线，形成出射光线出射；所述第一反射斜面22与所述第二反射斜面32与所述衬底10的夹角的角度相同或不同。
需要说明的是，所述衬底10可以包括半导体元素，例如单晶、多晶或非晶结构的硅或硅锗(SiGe)；也可以包括混合的半导体结构，例如碳化硅、锑化铟、碲化铅、砷化铟、磷化铟、砷化镓或锑化镓、合金半导体或其组合；也可以是绝缘体上硅(SOI)。此外，衬底10还可以包括其它的材料，例如外延层或掩埋层的多层结构。虽然在此描述了可以作为衬底10的材料的几个示例，但是可以作为半导体衬底10的任何材料均落入本发明的精神和范围。本发明的光波导所使用的衬底10的材料并无特殊限制，任何适合于支撑高分子聚合物的材料均可作为本申请光波导的衬底10。在一些实施例中使用的衬底10除半导体材料之外还可以是耐热玻璃(pyrex)，例如石英玻璃、硼磷硅酸盐玻璃(BPSG)；或有机高分子树脂，例如但不限于聚酯树脂(polyester resin)、聚碳酸脂树脂(polycarbonate resin)、酚醛层压树脂或聚氨基甲酸酯树脂(polyurethane resin)；或它们的混合物，此外还可以是PCB板。
在图1和图6所示的实施例中，所述衬底10由第一包层41和芯层42构成，且形成第一包层41的材料的折射率小于形成芯层42的材料的折射率，这是因为光线需要在芯层42中以全反射的方式传播，因此需要在芯层42和第一包层41之间的界面形成光密介质向光疏介质入射的情况，以为全反射提供必要条件。在芯层42背离第一包层41一侧可以是空气层，这是因为空气层的折射率为1，通常小于绝大多数的材料的折射率，因此，相较于芯层42而言，空气层也为光疏介质，能够使得光线在芯层42与空气层的界面以全反射的方式传播。
还需要说明的是，所述第一反射斜面22与所述衬底10的夹角和第二反射斜面32与所述衬底10的夹角均是指反射斜面与衬底10所成的锐角，即所述第一反射斜面22与所述衬底10的夹角的取值大于0°，且小于90°；
所述第二反射斜面32与所述衬底10的夹角的取值大于0°，且小于90°。
所述第一反射斜面22与衬底10的夹角的取值可以是45°、30°、15°、60°和75°等；同样的，所述第二反射斜面32与衬底10的夹角的取值可以是45°、30°、15°、60°和75°等。所述第一反射斜面22与所述衬底10的夹角可以与所述第二反射斜面32与所述衬底10的夹角相同，也可以与所述第二反射斜面32与所述衬底10的夹角不同，本申请对此并不做限定。
形成所述第一包层41的材料可以是聚压克力酸酯(polyacrylate)、聚硅氧烷(polysiloxane)、聚酰亚胺(polyimide)或聚碳酸脂(polycarbonate)或通过3-异丁烯酰氧基丙基三乙氧基硅烷(MPETS)和苯基三乙氧基硅烷(PhTES)的混合溶液旋涂形成。本申请对此并不做限定，具体视实际情况而定。
形成所述芯层42的材料为正性光致抗蚀剂、负性光致抗蚀剂、感光性聚酰亚胺树脂或感光性溶胶凝胶中的一种或任意多种的混合物。
在图1中，所述芯层42的顶表面与所述入射单元20的顶表面在同一水平面上；在图6中，所述芯层42的顶表面的高度小于所述入射单元20的顶表面的高度。
在图1和图6所示的光波导中，所述入射单元20包括：第一限制结构21和至少覆盖所述第一限制结构21侧壁表面的第一反射斜面22；
所述出射单元30包括第二限制结构31和至少覆盖所述第二限制结构31侧壁的第二反射斜面32，所述第一反射斜面22和第二反射斜面32之间具有限制凹槽，所述限制凹槽用于设置所述传导单元40。
形成所述限制结构的材料为硅、氧化硅、氮化硅、氮氧化硅、石英玻璃和硼磷硅酸盐玻璃中的一种。在本申请的一些实施例中，还可以采用化学气相沉积的方法形成所述限制结构；此外也可以使用粘接的方式，用环氧树脂等粘接剂将限制结构与衬底10粘接在一起。也可以采用旋涂的方法，用可选图氧化硅形成所述限制结构。
所述限制凹槽形成可以是先形成限制层后，对限制层进行刻蚀或机械切割或激光切割的方法形成该限制凹槽，形成限制凹槽后剩余的限制层成为所述限制结构。
所述第一反射斜面22和第二反射斜面32均为金属斜面。金属斜面具有较高的反射率，可以提升入射光线及出射光线的光能利用率，减少光能损失。
参考图2和图7，图2和图7为本申请的另一个实施例提供的一种光波导的剖面结构示意图，所述光波导还包括：位于所述芯层42背离所述第一包层41一侧的第二包层43；
所述第二包层43的折射率小于所述芯层42的折射率。
同样的，所述第二包层43的折射率小于所述芯层42的折射率是保证光线能够在芯层42中进行全反射传播的必要条件。在图2所示的实施例中，所述第二包层43覆盖所述芯层42以及所述限制结构的表面；在图7所示的实施例中，所述第二包层43覆盖所述芯层42背离所述第一包层41一侧表面。
在图2和图7所示的实施例中，由于所述第二包层43的存在，使得所述芯层42被第一包层41和第二包层43包裹，避免了裸露在空气中被外界杂质腐蚀的风险。增强了光波导的防腐蚀性能。
参考图3，图3为本申请的又一个实施例提供的一种光波导的剖面结构示意图，所述光波导还包括：位于所述第一包层41与所述衬底10之间的反射金属层RE。
该反射金属层RE可以提升光线在芯层42中传播过程中的反射率，提升光线的光能利用率。
仍然参考图3，所述第一反射斜面22、第二反射斜面32和反射金属层RE相互连接，且由同一层金属层形成。
由同一层金属层形成的第一反射斜面22、第二反射斜面32和反射金属层RE可以减少光波导的制备工艺流程，有利于简化光波导的工序，提升光波导的制备效率。
参考图4、图5以及图8和图9，图4、图5、图8和图9为本申请的再一个实施例提供的一种光波导的剖面结构示意图，在本实施例中，所述光波导还包括：第一透镜结构50和第二透镜结构60；
所述第一透镜结构50用于对光线进行处理后向所述入射单元20传输；
所述第二透镜结构60用于对出射单元30出射的光线进行处理后出射。
所述第一透镜结构50的存在可以使得光波导可以接收更大入射角范围的入射光线，使得这些光线均可以被入射单元20接收并在芯层42中以全反射的方式传播。
所述第二透镜结构60的存在可以使得光波导出射的光线具有一个更大范围的可选的出射角度，使得光波导的出射光线角度可以满足后续的光学元件的要求。
因此，所述第一透镜结构50和第二透镜结构60的存在进一步提升了所述光波导的适用性。
所述第一透镜结构50对光线的处理包括汇聚、发散和改变偏振状态中的一种或多种；
所述第二透镜结构60对光线的处理包括汇聚、分束、发散和改变偏振状态中的一种或多种。
那么相应的，所述透镜结构中可以包括凸透镜、凹透镜、偏振片、分束镜中的一种或任意多种的组合，以使所述透镜结构具有相应的光线处理功能。
仍然参考图4和图8，在图4和图8所示的光波导中，所述第一透镜结构50和第二透镜结构60均为单个透镜。当所述第一透镜结构50和第二透镜结构60为单个透镜时，所述第一透镜结构50和第二透镜结构60对光线的处理包括汇聚、分束、发散和改变偏振状态中的一种功能。
仍然参考图5和图9，在图5和图9所示的光波导中，所述第一透镜结构50和第二透镜结构60均为多个透镜组合形成的透镜组。当所述第一透镜结构50和第二透镜结构60为多个透镜组合形成的透镜组时，所述第一透镜结构50和第二透镜结构60对光线的处理可以包括汇聚、分束、发散和改变偏振状态中的一种或多种功能。本申请对所述第一透镜结构50和第二透镜结构60的具体构成并不做限定，具体视实际情况而定。
本申请实施例还提供了一种光波导的制备方法，用于形成上面任意一个实施例所述的光波导，所述光波导的制备方法如图10-20所示，该制备方法包括：
S101：提供衬底10，所述衬底10包括多个功能区11和位于相邻所述功能区11之间的切割道12，所述功能区11上形成有入射单元20、出射单元30和 位于所述入射单元20和出射单元30之间的限制凹槽，所述入射单元20的顶表面高度与所述出射单元30的顶表面高度相同，所述入射单元20包括第一反射斜面22，所述出射单元30包括第二反射斜面32，所述第一反射斜面22和第二反射斜面32与所述衬底10的夹角的角度相同或不同；
如图10和图11所示，图10为所述衬底10的俯视结构示意图，图11为图10沿PP’线的剖面结构示意图，所述衬底10可以包括半导体元素，例如单晶、多晶或非晶结构的硅或硅锗(SiGe)；也可以包括混合的半导体结构，例如碳化硅、锑化铟、碲化铅、砷化铟、磷化铟、砷化镓或锑化镓、合金半导体或其组合；也可以是绝缘体上硅(SOI)。此外，衬底10还可以包括其它的材料，例如外延层或掩埋层的多层结构。虽然在此描述了可以作为衬底10的材料的几个示例，但是可以作为半导体衬底10的任何材料均落入本发明的精神和范围。本发明的光波导所使用的衬底10的材料并无特殊限制，任何适合于支撑高分子聚合物的材料均可作为本申请光波导的衬底10。在一些实施例中使用的衬底10除半导体材料之外还可以是耐热玻璃(pyrex)，例如石英玻璃、硼磷硅酸盐玻璃(BPSG)；或有机高分子树脂，例如但不限于聚酯树脂(polyester resin)、聚碳酸脂树脂(polycarbonate resin)、酚醛层压树脂或聚氨基甲酸酯树脂(polyurethane resin)；或它们的混合物，此外还可以是PCB板。
如图12-图14所示，在本申请的一个实施例中，位于衬底10上的所述入射单元20、出射单元30和位于所述入射单元20和出射单元30之间的限制凹槽TH的形成过程包括：
在所述衬底10上形成限制层DL；
对所述限制层DL进行半导体切割处理，以在所述限制层DL中形成所述限制凹槽TH，所述限制凹槽TH两侧的限制层DL分别为第一限制结构21和第二限制结构31，所述第一限制结构21朝向所述限制凹槽TH一侧和第二限制结构31朝向所述限制凹槽TH一侧均为倾斜斜面；所述半导体切割处理可以为激光切割处理，还可以为机械切割处理。
形成至少覆盖所述第一限制结构21的倾斜斜面表面的第一反射斜面22，以及至少覆盖所述第二限制结构31的倾斜斜面表面的第二反射斜面32，所述第一反射斜面22和第二反射斜面32与所述衬底10的夹角的角度不同。
利用半导体切割处理形成限制凹槽TH后，第一反射斜面22和第二反射斜面32与所述衬底10的夹角的角度可以不同，当然地，也可以相同。
仍然参考图12-图14，在本申请的另一个实施例中，所述入射单元20、出射单元30和位于所述入射单元20和出射单元30之间的限制凹槽TH的形成过程包括：
在所述衬底10上形成限制层DL；
对所述限制层DL进行刻蚀工艺处理，以在所述限制层DL中形成所述限制凹槽TH，所述限制凹槽TH两侧的限制层DL分别为第一限制结构21和第二限制结构31，所述第一限制结构21朝向所述限制凹槽TH一侧和第二限制结构31朝向所述限制凹槽TH一侧均为倾斜斜面；
形成至少覆盖所述第一限制结构21的倾斜斜面表面的第一反射斜面22，以及至少覆盖所述第二限制结构31的倾斜斜面表面的第二反射斜面32，所述第一反射斜面22和第二反射斜面32与所述衬底10的夹角的角度相同。
受限于刻蚀工艺的限制，利用刻蚀工艺形成限制凹槽TH后，第一反射斜面22和第二反射斜面32与所述衬底10的夹角的角度相同。
所述限制层DL的材料包括但不限于硅、氧化硅、氮化硅、氮氧化硅、石英玻璃和硼磷硅酸盐玻璃中的一种。在本申请的一些实施例中，还可以采用化学气相沉积的方法形成所述限制结构；此外也可以使用粘接的方式，用环氧树脂等粘接剂将限制结构与衬底10粘接在一起。也可以采用旋涂的方法，用可选图氧化硅形成所述限制层DL，形成限制凹槽TH后剩余的限制层DL成为所述限制结构。
所述第一反射斜面22和第二反射斜面32均为金属斜面。金属斜面具有较高的反射率，可以提升入射光线及出射光线的光能利用率，减少光能损失。
在形成所述第一包层41之前，参考图15，所述形成至少覆盖所述第一限制结构21的倾斜斜面表面的第一反射斜面22，以及至少覆盖所述第二限制结构31的倾斜斜面表面的第二反射斜面32包括：
形成覆盖所述第一限制结构21表面、第二限制结构31表面和所述限制凹槽TH底部表面的金属层，以形成所述第一反射斜面22、第二反射斜面32和连 接所述第一反射斜面22和第二反射斜面32的反射金属层RE。
该反射金属层RE可以提升光线在芯层42中传播过程中的反射率，提升光线的光能利用率。
参考图16，S102：在所述限制凹槽TH中形成第一包层41，所述第一包层41的高度小于所述入射单元20及所述出射单元30的顶表面高度；
参考图17，S103：在所述第一包层41表面形成芯层42，所述芯层42的折射率大于所述第一包层41的折射率，所述芯层42的顶表面的高度小于或等于所述入射单元20和所述出射单元30的高度，所述芯层42用于接收所述入射单元20反射的光线，所述光线在所述芯层42内多次全反射后向所述出射单元30出射；
在图17所示的结构中，所述芯层42的顶表面与所述反射单元的顶表面位于同一水平面。在本申请的一些可选实施例中，所述芯层42的顶表面高度还可以小于所述反射单元的顶表面的高度。
参考图18，所述沿所述切割道12对所述衬底10进行切割之前还包括：
在所述芯层42背离所述第一包层41一侧形成第二包层43；
所述第二包层43的折射率小于所述芯层42的折射率。
同样的，所述第二包层43的折射率小于所述芯层42的折射率是保证光线能够在芯层42中进行全反射传播的必要条件。
由于所述第二包层43的存在，使得所述芯层42被第一包层41和第二包层43包裹，避免了裸露在空气中被外界杂质腐蚀的风险。增强了光波导的防腐蚀性能。
参考图19-图21，所述在所述第一包层41表面形成芯层42之后，所述沿所述切割道12对所述衬底10进行切割之前还包括：
形成用于对光线进行处理后向所述入射单元20传输的第一透镜结构50；
形成用于对出射单元30出射的光线进行处理后出射的第二透镜结构60。
所述第一透镜结构50的存在可以使得光波导可以接收更大入射角范围的入射光线，使得这些光线均可以被入射单元20接收并在芯层42中以全反射的方式传播。
所述第二透镜结构60的存在可以使得光波导出射的光线具有一个更大范围的可选的出射角度，使得光波导的出射光线角度可以满足后续的光学元件的要求。
因此，所述第一透镜结构50和第二透镜结构60的存在进一步提升了所述光波导的适用性。
所述第一透镜结构50对光线的处理包括汇聚、发散和改变偏振状态中的一种或多种；
所述第二透镜结构60对光线的处理包括汇聚、分束、发散和改变偏振状态中的一种或多种。
那么相应的，所述透镜结构中可以包括凸透镜、凹透镜、偏振片、分束镜中的一种或任意多种的组合，以使所述透镜结构具有相应的光线处理功能。
参考图19，在图19所示的结构中，所述第一透镜结构50和第二透镜结构60均为单个透镜。当所述第一透镜结构50和第二透镜结构60为单个透镜时，所述第一透镜结构50和第二透镜结构60对光线的处理包括汇聚、分束、发散和改变偏振状态中的一种功能。
参考图20，在图20所示的结构中，所述第一透镜结构50和第二透镜结构60均为多个透镜组合形成的透镜组。当所述第一透镜结构50和第二透镜结构60为多个透镜组合形成的透镜组时，所述第一透镜结构50和第二透镜结构60对光线的处理可以包括汇聚、分束、发散和改变偏振状态中的一种或多种功能。本申请对所述第一透镜结构50和第二透镜结构60的具体构成并不做限定，具体视实际情况而定。
参考图1-图9，S104：沿所述切割道12对所述衬底10进行切割，以获得单个光波导。
相应的，本申请实施例还提供了一种光波导系统，包括多个如上述任一实施例所述的光波导。
综上所述，本申请实施例提供了一种光波导及其制备方法、光波导系统，其中，所述光波导的入射单元20的第一反射斜面22用于将接收的光线反射向传导单元40，所述光波导的出射单元30的第二反射斜面32用于反射所述入射 单元20传输的光线，以形成出射光线出射，并且所述第一反射斜面22和第二反射斜面32与所述衬底10的夹角的角度相同或不同。所述第一反射斜面22与衬底10的夹角决定着入射单元20对接收的光线的传播方向的改变程度，所述第二反射斜面32与衬底10的夹角决定着出射单元30形成的出射光线的出射角度，而所述第一反射斜面22和第二反射斜面32与所述衬底10的夹角既可以相同，也可以不同，从而使得光波导可以满足不同的光线入射角度和出射角度的要求，增加了光波导在各个应用场景的适用性。
另外，所述光波导的结构适用于晶圆级半导体制备工艺，有利于降低光波导的尺寸，并使光波导具有一致性好和对准精度高的优点。
本说明书中各个实施例采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似部分互相参见即可。

Claims (19)

  1. 一种光波导，设置于衬底表面，所述光波导包括：入射单元、传导单元和出射单元；其中，
    所述入射单元的顶表面高度与所述出射单元的顶表面高度相同，所述入射单元包括第一反射斜面，所述第一反射斜面用于将光线反射向所述传导单元；
    所述传导单元位于所述入射单元与所述出射单元之间，包括位于衬底表面的第一包层和位于所述第一包层背离衬底一侧的芯层，所述芯层的折射率大于所述第一包层的折射率，所述芯层的顶表面的高度小于或等于所述入射单元和所述出射单元的高度，所述芯层用于接收所述入射单元反射的光线，所述光线在所述芯层内多次全反射后向所述出射单元出射；
    所述出射单元包括第二反射斜面，所述第二反射斜面用于反射所述传导单元传输的光线，形成出射光线出射；所述第一反射斜面与所述第二反射斜面与所述衬底的夹角的角度相同或不同。
  2. 根据权利要求1所述的光波导，其中，所述第一反射斜面与所述衬底的夹角的取值大于0°，且小于90°；
    所述第二反射斜面与所述衬底的夹角的取值大于0°，且小于90°。
  3. 根据权利要求1所述的光波导，其中，所述入射单元包括：第一限制结构和至少覆盖所述第一限制结构侧壁表面的第一反射斜面；
    所述出射单元包括第二限制结构和至少覆盖所述第二限制结构侧壁的第二反射斜面，所述第一反射斜面和第二反射斜面之间具有限制凹槽，所述限制凹槽用于设置所述传导单元。
  4. 根据权利要求3所述的光波导，其中，形成所述限制结构的材料为硅、氧化硅、氮化硅、氮氧化硅、石英玻璃和硼磷硅酸盐玻璃中的一种。
  5. 根据权利要求3所述的光波导，其中，所述第一反射斜面和第二反射斜面均为金属斜面。
  6. 根据权利要求5所述的光波导，还包括：位于所述第一包层与所述衬底之间的反射金属层。
  7. 根据权利要求6所述的光波导，其中，所述第一反射斜面、第二反射斜面和反射金属层相互连接，且由同一层金属层形成。
  8. 根据权利要求1所述的光波导，还包括：位于所述芯层背离所述第一包层一侧的第二包层；
    所述第二包层的折射率小于所述芯层的折射率。
  9. 根据权利要求1所述的光波导，其中，形成所述芯层的材料为正性光致抗蚀剂、负性光致抗蚀剂、感光性聚酰亚胺树脂或感光性溶胶凝胶中的一种或任意多种的混合物。
  10. 根据权利要求1所述的光波导，还包括：第一透镜结构和第二透镜结构；
    所述第一透镜结构用于对光线进行处理后向所述入射单元传输；
    所述第二透镜结构用于对出射单元出射的光线进行处理后出射。
  11. 据权利要求10所述的光波导，其中，所述第一透镜结构对光线的处理包括汇聚、发散和改变偏振状态中的一种或多种；
    所述第二透镜结构对光线的处理包括汇聚、分束、发散和改变偏振状态中的一种或多种。
  12. 根据权利要求10所述的光波导，其中，所述第一透镜结构和第二透镜结构为单个透镜或多个透镜组合形成的透镜组。
  13. 一种光波导的制备方法，包括：
    提供衬底，所述衬底包括多个功能区和位于相邻所述功能区之间的切割道，所述功能区上形成有入射单元、出射单元和位于所述入射单元和出射单元之间的限制凹槽，所述入射单元的顶表面高度与所述出射单元的顶表面高度相同，所述入射单元包括第一反射斜面，所述出射单元包括第二反射斜面，所述第一反射斜面和第二反射斜面与所述衬底的夹角的角度相同或不同；
    在所述限制凹槽中形成第一包层，所述第一包层的高度小于所述入射单元及所述出射单元的顶表面高度；
    在所述第一包层表面形成芯层，所述芯层的折射率大于所述第一包层的折射率，所述芯层的顶表面的高度小于或等于所述入射单元和所述出射单元的高度，所述芯层用于接收所述入射单元反射的光线，所述光线在所述芯层内多次全反射后向所述出射单元出射；
    沿所述切割道对所述衬底进行切割，以获得单个光波导。
  14. 根据权利要求13所述的光波导的制备方法，其中，所述入射单元、出射单元和位于所述入射单元和出射单元之间的限制凹槽的形成过程包括：
    在所述衬底上形成限制层；
    对所述限制层进行半导体切割处理，以在所述限制层中形成所述限制凹槽，所述限制凹槽两侧的限制层分别为第一限制结构和第二限制结构，所述第一限 制结构朝向所述限制凹槽一侧和第二限制结构朝向所述限制凹槽一侧均为倾斜斜面；
    形成至少覆盖所述第一限制结构的倾斜斜面表面的第一反射斜面，以及至少覆盖所述第二限制结构的倾斜斜面表面的第二反射斜面，所述第一反射斜面和第二反射斜面与所述衬底的夹角的角度不同。
  15. 根据权利要求13所述的光波导的制备方法，其中，所述入射单元、出射单元和位于所述入射单元和出射单元之间的限制凹槽的形成过程包括：
    在所述衬底上形成限制层；
    对所述限制层进行刻蚀工艺处理，以在所述限制层中形成所述限制凹槽，所述限制凹槽两侧的限制层分别为第一限制结构和第二限制结构，所述第一限制结构朝向所述限制凹槽一侧和第二限制结构朝向所述限制凹槽一侧均为倾斜斜面；
    形成至少覆盖所述第一限制结构的倾斜斜面表面的第一反射斜面，以及至少覆盖所述第二限制结构的倾斜斜面表面的第二反射斜面，所述第一反射斜面和第二反射斜面与所述衬底的夹角的角度相同。
  16. 根据权利要求14或15任一项所述的光波导的制备方法，其中，所述形成至少覆盖所述第一限制结构的倾斜斜面表面的第一反射斜面，以及至少覆盖所述第二限制结构的倾斜斜面表面的第二反射斜面包括：
    形成覆盖所述第一限制结构表面、第二限制结构表面和所述限制凹槽底部表面的金属层，以形成所述第一反射斜面、第二反射斜面和连接所述第一反射斜面和第二反射斜面的反射金属层。
  17. 根据权利要求13所述的光波导的制备方法，其中，所述沿所述切割道对所述衬底进行切割之前还包括：
    在所述芯层背离所述第一包层一侧形成第二包层；
    所述第二包层的折射率小于所述芯层的折射率。
  18. 根据权利要求13所述的光波导的制备方法，其中，所述在所述第一包层表面形成芯层之后，所述沿所述切割道对所述衬底进行切割之前还包括：
    形成用于对光线进行处理后向所述入射单元传输的第一透镜结构；
    形成用于对出射单元出射的光线进行处理后出射的第二透镜结构。
  19. 一种光波导系统，包括：多个如权利要求1-12任一项所述的光波导。
PCT/CN2019/117532 2018-11-13 2019-11-12 光波导及其制备方法、光波导系统 WO2020098652A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201811345805.4A CN109239838B (zh) 2018-11-13 2018-11-13 一种光波导及其制备方法、光波导系统
CN201811345805.4 2018-11-13

Publications (1)

Publication Number Publication Date
WO2020098652A1 true WO2020098652A1 (zh) 2020-05-22

Family

ID=65078340

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/CN2019/117531 WO2020098651A1 (zh) 2018-11-13 2019-11-12 光波导
PCT/CN2019/117532 WO2020098652A1 (zh) 2018-11-13 2019-11-12 光波导及其制备方法、光波导系统

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/117531 WO2020098651A1 (zh) 2018-11-13 2019-11-12 光波导

Country Status (2)

Country Link
CN (1) CN109239838B (zh)
WO (2) WO2020098651A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109239838B (zh) * 2018-11-13 2020-06-19 苏州晶方半导体科技股份有限公司 一种光波导及其制备方法、光波导系统
US11349567B2 (en) 2019-03-13 2022-05-31 Telefonaktiebolaget Lm Ericsson (Publ) Use of waveguides and lenses to improve light communication reception in devices

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060110114A1 (en) * 2004-10-19 2006-05-25 Kenji Yanagisawa Manufacturing method of an optical waveguide
CN101122655A (zh) * 2007-09-25 2008-02-13 晶方半导体科技（苏州）有限公司 光波导及其制造方法
CN101498813A (zh) * 2007-09-25 2009-08-05 晶方半导体科技（苏州）有限公司 光波导
CN101498814A (zh) * 2007-09-25 2009-08-05 晶方半导体科技（苏州）有限公司 光波导
CN103163600A (zh) * 2011-12-15 2013-06-19 鸿富锦精密工业（深圳）有限公司 光耦合模块及其制备方法
CN103941398A (zh) * 2014-04-09 2014-07-23 北京理工大学 透过式眼镜显示器
CN205787362U (zh) * 2016-02-26 2016-12-07 中国航空工业集团公司洛阳电光设备研究所 光波导元件、二维扩展光波导器件、平视显示装置及照明装置
CN109239838A (zh) * 2018-11-13 2019-01-18 苏州晶方半导体科技股份有限公司 一种光波导及其制备方法、光波导系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4752328B2 (ja) * 2005-05-23 2011-08-17 住友ベークライト株式会社 光導波路構造体
KR100834648B1 (ko) * 2007-02-23 2008-06-02 삼성전자주식회사 광전 복합 기판 및 그 제조 방법
JP2010139562A (ja) * 2008-12-09 2010-06-24 Shinko Electric Ind Co Ltd 光導波路、光導波路搭載基板及び光送受信装置
JP5369301B2 (ja) * 2009-12-18 2013-12-18 新光電気工業株式会社 光導波路の製造方法、光導波路及び光送受信装置
KR20120048258A (ko) * 2010-11-05 2012-05-15 한국전자통신연구원 경사진 거울 및 렌즈를 구비한 광 도파로 구조체
CN104136952B (zh) * 2011-12-09 2018-05-25 朗美通运营有限责任公司 用于改变激光束的光束参数积的光学器件和方法
DE102012025565B4 (de) * 2012-12-20 2015-03-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Optisches Kopplungssystem mit einem optischen Koppler und einem lichtdurchlässigen äußeren Medium sowie Herstellung und Verwendung eines solchen Systems
US9568677B2 (en) * 2013-05-30 2017-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Waveguide structure and method for fabricating the same
CN104900749B (zh) * 2014-03-04 2017-05-17 中芯国际集成电路制造(上海)有限公司 光耦合器件及其形成方法
CN104597603B (zh) * 2015-01-25 2018-09-18 上海理湃光晶技术有限公司 平面锯齿夹层结构的目视光学显示器件
CN104503087B (zh) * 2015-01-25 2019-07-30 上海理湃光晶技术有限公司 偏振导光的平面波导光学显示器件
CN107643559A (zh) * 2017-11-13 2018-01-30 北京理工大学 基于反射式波导耦合器的光线传导和分离方法及装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060110114A1 (en) * 2004-10-19 2006-05-25 Kenji Yanagisawa Manufacturing method of an optical waveguide
CN101122655A (zh) * 2007-09-25 2008-02-13 晶方半导体科技（苏州）有限公司 光波导及其制造方法
CN101498813A (zh) * 2007-09-25 2009-08-05 晶方半导体科技（苏州）有限公司 光波导
CN101498814A (zh) * 2007-09-25 2009-08-05 晶方半导体科技（苏州）有限公司 光波导
CN103163600A (zh) * 2011-12-15 2013-06-19 鸿富锦精密工业（深圳）有限公司 光耦合模块及其制备方法
CN103941398A (zh) * 2014-04-09 2014-07-23 北京理工大学 透过式眼镜显示器
CN205787362U (zh) * 2016-02-26 2016-12-07 中国航空工业集团公司洛阳电光设备研究所 光波导元件、二维扩展光波导器件、平视显示装置及照明装置
CN109239838A (zh) * 2018-11-13 2019-01-18 苏州晶方半导体科技股份有限公司 一种光波导及其制备方法、光波导系统

Also Published As

Publication number Publication date
WO2020098651A1 (zh) 2020-05-22
CN109239838A (zh) 2019-01-18
CN109239838B (zh) 2020-06-19

Similar Documents

Publication Publication Date Title
US9804334B2 (en) Fiber to chip optical coupler
JP7325188B2 (ja) コリメーション構造体が集積されたフォトニックチップ
US9664858B2 (en) Optical photonic circuit coupling
US9484482B2 (en) Efficient optical (light) coupling
US9091819B2 (en) Grating edge coupler and method of forming same
US20180149815A1 (en) Off-axis micro-mirror arrays for optical coupling in polymer waveguides
US7343058B2 (en) Efficient light coupler from off-chip to on-chip waveguides
US20120114293A1 (en) Optical waveguide structure having angled mirror and lens
CN104350403A (zh) 光学中介件
US10564374B2 (en) Electro-optical interconnect platform
US20110123152A1 (en) Optical Splitter Device
US8811778B2 (en) Systems and method for routing optical signals
WO2009017862A1 (en) Systems and method for routing optical signals
JP2015118372A (ja) 放射線カプラ
WO2020098652A1 (zh) 光波导及其制备方法、光波导系统
US6921956B2 (en) Optical apparatus using vertical light receiving element
US20060193560A1 (en) Coupling structure between a fiber and a planar lightwave circuit (PLC) and manufacturing method therefor
WO2023011096A1 (zh) 光纤阵列连接器及制造超构表面透镜的方法
Shen et al. SOI-based trapezoidal waveguide with 45-degree microreflector for non-coplanar light bending
TWI490576B (zh) 光通訊系統
JP2004053623A (ja) 光路変換部を備える光導波基板およびその製造方法
Gu et al. Modulation-enabled tapered remote coupler: All-optical communication on and off chip
TWI518394B (zh) 光電元件
CN118103748A (zh) 用于激光源的高效光栅耦合器
JP2014035486A (ja) 受光デバイス

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19885267

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19885267

Country of ref document: EP

Kind code of ref document: A1