WO2020096950A1 - Nitrure d'indium et de gallium à intégration hétérogène sur des circuits intégrés photoniques au silicium - Google Patents

Nitrure d'indium et de gallium à intégration hétérogène sur des circuits intégrés photoniques au silicium Download PDF

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WO2020096950A1
WO2020096950A1 PCT/US2019/059638 US2019059638W WO2020096950A1 WO 2020096950 A1 WO2020096950 A1 WO 2020096950A1 US 2019059638 W US2019059638 W US 2019059638W WO 2020096950 A1 WO2020096950 A1 WO 2020096950A1
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waveguides
waveguide
ingan
ill
nitride films
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Toshihiro Kamei
John E. Bowers
Takeshi Kamikawa
Paolo PINTUS
Steven P. Denbaars
Shuji Nakamura
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The Regents Of The University Of California
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12002—Three-dimensional structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12078—Gallium arsenide or alloys (GaAs, GaAlAs, GaAsP, GaInAs)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H01S5/1035—Forward coupled structures [DFC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers

Definitions

  • This invention relates to heterogeneously integrated Indium Gallium Nitride (InGaN) on Silicon (Si) photonic integrated circuits.
  • InGaN Indium Gallium Nitride
  • Si Silicon
  • Si photonics have solved the light source problems of Si photonics.
  • Photolithographical processing of an Indium Phosphide (InP) die directly bonded with a Silicon-on-Insulator (SOI) wafer requires no precise alignment bonding, leading, for example, to high volume production of 100 G (Gigabit) Si photonics transceivers for data center applications.
  • InP Indium Phosphide
  • SOI Silicon-on-Insulator
  • a heterogeneously integrated Si laser when combined with an optical phased array, is capable of steering the laser beam, making the heterogeneously integrated Si laser promising for visual display and LIDAR (Light Detection And Ranging) applications.
  • LIDAR Light Detection And Ranging
  • CMOS complementary metal-oxide semiconductor
  • LEDs blue-emitting Ill-nitride light emitting diodes
  • IDs Ill-nitride laser diodes
  • ITI-nitride LDs suffer from a small market as compared to their Ill-nitride LED counterparts.
  • the present invention discloses heterogeneous integration of InGaN on Si photonic integrated circuits, wherein one or more Ill-mtride films are vertically stacked on one or more waveguides fabricated on an Si wafer by bonding or epitaxial growth.
  • the waveguides may compose Titanium Dioxide (T1O2), Silicon Nitride (SiN) or another dielectric material transparent in the visible region.
  • T1O2 Titanium Dioxide
  • SiN Silicon Nitride
  • One or more tapers can adiabatically transfer modes between a hybrid and pure waveguide region.
  • FIG. 1 is a flowchart illustrating a fabrication method for a heterogeneously integrated laser, according to the present invention.
  • FIG. 2(a) is a schematic that shows a cross-sectional structure of a
  • heterogeneously integrated laser according to a first embodiment of the present invention.
  • FIG. 2(b) is an image that shows a corresponding mode profile for the structure of FIG. 1(a) simulated with a finite difference eigenmode solver.
  • FIG. 3(a) is a schematic that shows a cross-sectional structure of a
  • heterogeneously integrated laser according to a second embodiment of the present invention.
  • FIG. 3(b) is an image that shows a corresponding mode profile for the structure of FIG. 3(a) simulated with a finite difference eigenmode solver.
  • FIGS. 4(a) and 4(b) are schematics that show a top view and side view, respectively, of a taper structure, according to a third embodiment of the present invention.
  • FIG. 4(c) is an image that shows a corresponding XZ field profile for the structure of FIGS. 4(a) and 4(b) simulated with an eigenmode expansion.
  • FIGS. 5(a) and 5(b) are schematics that show' a top view' and side view, respectively, of a taper structure for a vertical interlayer transfer of modes between waveguides, according to a fourth embodiment of the present invention.
  • FIG. 6 is a schematic of a heterogeneously integrated laser diode, according to a fifth embodiment of the present invention. DETAILED DESCRIPTION OF THE INVENTION
  • Heterogeneous integration of InGaN on Si photonic integrated circuits offers various new functionalities, such as surface emission and beam steering, improved performance, such as coherence and linewidth due to low waveguide loss, as well as improved reliability and reduced cost, by utilizing mature CMOS processing. Separation of a light output port from a heat-generating InGaN gain section also reduces light- induced particle collection, eliminating the need for metal packaging used with conventional InGaN LDs, significantly reducing the cost.
  • this invention proposes several heterogeneously integrated InGaN lasers on Si photonic integrated circuits, including the following;
  • a heterogeneously integrated InGaN/SiN or IiiGaN/TiCk laser comprised of an SiN or TiCh waveguide, an InGaN gain section, a taper that can adiabatically transfer modes between hybrid and pure waveguide regions, a distributed Bragg reflector (DBR), ring resonator or loop mirror that can form a cavity, and a surface emitter.
  • the surface emitter could be either a grating coupler or an optical phased array, adding the capability of surface emission.
  • the present invention proposes a new' type of InGaN LD where one or more thin InGaN films are vertically stacked on a waveguide fabricated on a Si wafer by bonding.
  • the InGaN films or layers form both gain and waveguide regions.
  • a low loss waveguide fabricated on Si with optical gain provided from the Ill-nitride materials can achieve a high Q cavity, improving the LD’s performance, such as coherence and linewidth. It is also beneficial to use the well-established Si photonics device library, providing additional functionality to the LDs. Also, well-established CMOS processing on large wafers can be utilized to reduce cost drastically while improving reliability.
  • FIG. 1 illustrates the fabrication method 100 for a heterogeneously integrated laser diode of the present invention.
  • Block 101 represents the growth of one or more III-mtride films, e.g., an InGaN epitaxial layer stack, on a GaN wafer.
  • III-mtride films e.g., an InGaN epitaxial layer stack
  • Block 102 represents the InGa epitaxial layer stack being bonded to a carrier wafer by one of several processes, such as Indium-Gold (InAu) or Gold-Gold (AuAu) intermetaliic bonding, benzocyclobutene (BCB) bonding or bonding using some other adhesive layer.
  • InAu Indium-Gold
  • AuAu Gold-Gold
  • BCB benzocyclobutene
  • Block 103 represents a photoelectrochemical (PEC) undercut etch being performed to remove the GaN wafer from the InGaN epitaxial layer stack.
  • the PEC undercut etch takes place in a potassium hydroxide (KOH) solution by shining filtered LED light from the GaN wafer side, such that carriers are predominantly generated in a sacrificial multi quantum well (MQW) structure, while an active MQW (or bulk active region, or quantum dot (QD) or quantum wire (QW) structure) is protected with a dielectric film. Since electrons can be extracted from the sacrificial MQW into the KOH solution through a metal electrode, GaN can be oxidized by holes, and dissolved in the KOH solution. As a result, the GaN wafer is removed.
  • KOH potassium hydroxide
  • Block 104 represents the InGaN epitaxial layer stack on the carrier wafer being bonded to a waveguide fabricated on an Si wafer by direct bonding or BCB bonding.
  • Block 105 represents the carrier wafer being removed from the InGaN epitaxial layer stack by etching of the bonding layer.
  • Block 106 represents further processing to fabricate the LD, including the etching of a ridge waveguide structure, which may include one or more tapers, deposition of one or more dielectric layers, and deposition of one or more contacts.
  • the two-time bonding approach used in this method is a prerequisite to make a earner spreading layer n-type.
  • p-type GaN has to reside on top to thermally desorb hydrogen that passivates the Magnesium (Mg) impurity for p-dopant activation.
  • Mg Magnesium
  • a one-time bonding approach like conventional heterogeneously integrated Si laser fabrication, makes a carrier spreading layer p-type, increasing senes resistance due to the high resistivity of r-type GaN.
  • the earner spreading layer is n-type, even with one-time bonding.
  • the advantage of the PEC etch is to precisely control the thickness of the InGaN epitaxial layer stack, because the position of the sacrificial MQW can be determined by controlling the thickness of the InGaN growth, which can be done to a nanometer precision.
  • the PEC etch is suited to this application, other approaches would be possible, such as laser lift off.
  • Nonpolar GaN exhibits a smooth surface after the PEC etch, but has a limited longer wavelength operation.
  • Semipolar GaN exhibits a less rough surface after the PEC etch compared to c-plane and would be advantageous for longer wavelength operation, which is favorable to reduce propagation loss both in terms of material loss and scattering at a waveguide interface.
  • Polar (c-plane) GaN exhibits a rough etched surface after the PEC etch, but laser lift off is available for substrate removal when grown on sapphire. In any of these cases, when the surface is rough enough to impede the direct bonding, the etched (bonding) surface can be polished by chemical mechanical polishing (CMP), or BCB bonding can be used instead of direct bonding.
  • CMP chemical mechanical polishing
  • TiOz and SiN can be used as waveguide material instead of Si.
  • TiOz has a comparable refractive index with InGaN and shows sufficient transparency in the blue and green region.
  • Other dielectric materials transparent in the visible region may also be used.
  • FIG. 2(a) is a schematic that shows a cross-sectional structure of an LD 200 , comprised of heterogeneously integrated InGaN on a TiOz waveguide fabricated on Si.
  • the fabrication of the LD 200 begins with a Si substrate 201 with an SiOz layer 202 thermally grown thereon.
  • the TiOz layers 203 are then deposited and
  • the TiOz layer 203 has a refractive index of 2.52 and a thickness of 250 nm, and includes a ridge waveguide 203 A that has a ridge height of 200 nm and a ridge width of 1 mhi.
  • the InGaN epitaxial layer stack is bonded onto the fabricated T1O2 layer 203 in the order mentioned: • a GaN n-cladding layer 204, with a refractive index of 2.46 and a thickness of 100 nm;
  • an active region 206 comprised of three Ino.2Gao.8N quantum wells (QWs)
  • EBL Alo 2Gao.9N electron blocking layer
  • GaN p-cladding layer 210 with a refractive index of 2.46 and a thickness of 600 nm.
  • the InGaN epitaxial layer stack is etched to create a ridge waveguide structure, immediately followed by a dielectric S1O2 layer 211 deposited thereon, allowing for a subsequent self-aligned lift-off process.
  • the fabricated S1O2 layer covers the GaN p- claddmg layer 210, the sidewalls of the mesa structure, and the In0.iGa0.9N n-guiding layer 205.
  • Metal contacts 212 are then deposited.
  • FIG. 3(a) is a schematic that shows a cross-sectional structure of an LD 300 , comprised of heterogeneously integrated InGaN on a SiN waveguide fabricated on Si.
  • the fabrication of the LD 300 begins with an Si substrate 201 with an SiO?. layer 202 thermally grown thereon.
  • the SiN layers 301 are deposited and lithographically fabricated onto the SiOa layer 202, wherein the SiN layer 301 has a refractive index of 2.04 and a thickness of 200 nm, and includes a wire waveguide 301 A that has a height of 200 nm and a width of 360 nm.
  • the InGaN epitaxial layer stack is bonded onto the fabricated SiN layer 301.
  • the InGaN epitaxial layer stack 204-210, SiCh layer 202 and metal contacts 212 are fabricated in the same manner and order as that shown in FIG. 2(a)
  • the InGaN epitaxial layer stack 204-210 includes both a lower taper 302 and an upper taper 303 that are formed with the etching of the ridge waveguide structure, wherein the low3 ⁇ 4r taper 302 comprises the GaN n-guiding layer 205 and GaN n-cladding layer 204, while the upper taper 303 comprises the GaN p-cladding layer 210, Ino . 1Gao . 9N p-guiding layer 209, Alo . 2Gao . 9N EBL 208, last GaN barrier 207 and active region 206
  • SiN constitutes a mature Si photonics platform.
  • An ultra-low loss SiN waveguide and high Q SiN ring resonator have been demonstrated for telecommunication wavelengths.
  • a low loss arrayed waveguide grating has been demonstrated at 760 nm.
  • the mode is predominantly confined in the InGaN region due to a lower refractive index for SiN than InGaN, so it would be very challenging to transfer modes from a hybrid InGaN/SiN waveguide region into a pure SiN waveguide region, and vice versa.
  • SiN acts as a cladding layer rather than a waveguide that can couple with a InGaN waveguide.
  • one of advantages of a SIN waveguide over a TiCb waveguide would be low loss in the visible light region, and in particular, the blue and green region.
  • an adiabatic InGaN/SiN taper structure is a prerequisite to achieve a high- performance laser.
  • FIGS. 4(a) and 4(b) are schematics that show a top view and a side view, respectively, of the heterogeneously integrated InGaN/SiN LD 300, illustrating the SiN waveguide 301 A, lower taper 302 and upper taper 303.
  • the fill patterns m FIGS. 4(a) and 4(b) for the SiN waveguide 301 A, lower taper 302 and upper taper 303 correspond to the fill patterns in FIG 3(a) of the SiN waveguide 301 A, lower taper 302 and upper taper 303.
  • FIG. 4(a) includes dimensions for a double segment taper structure formed by the lower taper 302 and upper taper 303 relative to the SiN waveguide 301 A.
  • the upper tape 303 has a tip width of 150 nm, while the lower taper 302 requires a tip width of 50 nm, which can be fabricated by either an advanced lithography tool or electron beam lithography.
  • the LD 300 has an overall length of 156 mhi. A similar adiabatic taper structure can be realized with wider tip widths and shorter taper lengths for the LD 200
  • FIG. 4(c) is an image that shows a corresponding XZ field profile for a wavelength of 470 nm of the LD 300 simulated with an eigenmode expansion.
  • a double segment taper structure is used, but a multi-segment or curvilinear taper structure also would be effective for shortening adiabatic taper structure.
  • FIGS. 4(a) and 4(h) show how a mode transfer takes place between a pure SiN waveguide 301 A region and a hybrid GaN/SiN waveguide region comprised generally of the InGaN layers 204-210 and the SiN waveguide 301 A, and more specifically, the SiN waveguide 301 A, lower taper 302 and upper taper 303.
  • FIGS. 5(a) and 5(b) are schematics that show a top view and a side view ?
  • an LD 500 comprised of an InGaN epitaxial layer stack 501, TiCh waveguide 502 and SiN waveguide 503, with taper structures 504 between the TiCh w3 ⁇ 4veguide 502 and SiN waveguide 503.
  • the taper structures 504 provide for a vertical interlayer transfer of modes between the TiO?. waveguide 502 and SiN waveguide 503. Specifically, the taper structures 504 between the TiCh w3 ⁇ 4veguide 502 and SiN waveguide 503 allow for very efficient coupling, when these waveguides 502, 503 are vertically stacked with a distance of -SO nm separating the waveguides 502, 503, for example, using a transparent dielectric material.
  • the laser diode 500 benefits not only from the mode transfer between the hybrid InGaN/TiCh waveguide 501/502 region and the pure T1O2 waveguide 502 region with a shorter InGaN 501 taper, but also from the mode transfer from the pure TiCh waveguide 502 region to the low loss pure SiN waveguide 503 region by making the T1O2 waveguide 502 as short as possible.
  • a shorter tape for the InGaN epitaxial layer stack 501 is also important for efficient lasing, because a taper in unpumped regions of the InGaN epitaxial layer stack 501 where carriers cannot be injected produces an optical loss.
  • FIG. 6 is a schematic of a heterogeneously integrated InGaN/SiN or InGaN/TiCh LD 600 comprising a InGaN gam section 601, tapers 602,
  • DBRs 606, 607 that form a resonant cavity
  • a surface emitter 608 the DBRs 606, 607 can be replaced by ring resonators or loop mirrors.
  • the surface emitter 608 is either a grating coupler or an optical phased array. Light emitted from a grating coupler would be at a fixed angle, while light from an optical phased array would be well collimated and steered.
  • This structure 600 could be an alternative to a conventional vertical cavity surface emitting laser (VCSEL). More importantly, the surface emitter 608 is positioned sufficiently away from the heat generated by the InGaN gain section 601 that the structure 600 can reduce light induced particle collection, eliminating the need for an expensive metal package. Note that all three factors, such as light, siloxane present in air, and heat, are necessary for light induced particle collection on the facets, which significantly lowers the output power of a InGaN laser diode.
  • a heterogeneously integrated InGaN laser on an Si photonic integrated circuit can offer various functionalities, such as surface emission, beam steering, improved coherence and narrower linewidth, by combining Si photonics devices and components, and exploiting new applications of InGaN lasers. Separation of the InGaN gain section from the laser output port drastically reduces light induced particle collection, eliminating the need for expensive metal packaging that is currently employed for InGaN lasers.
  • DFB distributed feedback
  • ring lasers Other forms of lasers, such as distributed feedback (DFB) or ring lasers, can be also implemented. Ion implantation would be effective for optical and electrical confinement, while a ridge structure is used for this purpose in the aforementioned embodiments.
  • These terms as used herein are intended to be broadly construed to include respective nitrides of the single species, B, Al, Ga, and In, as well as binary, ternary and quaternary compositions of such Group III metal species.
  • compositions and materials within the scope of the invention may further include quantities of dopants and/or other impurity materials and/or other indusional materials.
  • This invention also covers the selection of particular crystal orientations, directions, terminations and polarities of Group-Ill nitrides.
  • braces, ⁇ ⁇ denotes a set of symmetry-equivalent planes, which are represented by the use of parentheses, ( ).
  • brackets, [ ] denotes a direction
  • brackets, ⁇ > denotes a set of symmetry-equivalent directions.
  • Group-Ill nitride devices are grown along a polar orientation, namely a c- plane ⁇ 0001 ⁇ of the crystal, although this results in an undesirable quantum-confined Stark effect (QCSE), due to the existence of strong piezoelectric and spontaneous polarizations.
  • One approach to decreasing polarization effects in Group-Ill nitride devices is to grow the devices along nonpolar or semipolar orientations of the crystal.
  • the term“nonpolar” includes the ⁇ 11-20 ⁇ planes, known collectively as a-planes, and the ⁇ 10-10 ⁇ planes, known collectively as «/-planes. Such planes contain equal numbers of Group-Ill and Nitrogen atoms per plane and are charge-neutral. Subsequent nonpolar layers are equivalent to one another, so the bulk crystal will not be polarized along the growth direction.
  • semipolar can be used to refer to any plane that cannot be classified as c-plane, -plane, or / «-plane.
  • a semipolar plane would be any plane that has at least two nonzero h, i, or k Miller indices and a nonzero 1 Miller index. Subsequent semipolar layers are equivalent to one another, so the crystal will have reduced polarization along the growth direction.

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  • Optical Integrated Circuits (AREA)

Abstract

L'intégration hétérogène de nitrure d'indium et de gallium (InGaN) sur des circuits intégrés photoniques au silicium (Si) offre diverses nouvelles fonctionnalités, une performance améliorée, une fiabilité améliorée et un coût réduit. Un ou plusieurs films InGaN sont empilés verticalement sur un ou plusieurs guides d'ondes fabriqués sur une tranche de Si par liaison ou croissance épitaxiale, le guide d'ondes étant du dioxyde de titane (TiO2), du nitrure de silicium (SiN), ou un autre matériau diélectrique transparent dans la région visible. Un effilement peut transférer de manière adiabatique des modes entre une région de guide d'onde hybride et pure. La séparation d'un orifice de sortie de lumière d'une section de gain InGaN générant de la chaleur réduit également la collecte de particules induite par la lumière, éliminant le besoin d'un emballage métallique utilisé avec des diodes laser InGaN classiques, réduisant significativement le coût.
PCT/US2019/059638 2018-11-06 2019-11-04 Nitrure d'indium et de gallium à intégration hétérogène sur des circuits intégrés photoniques au silicium WO2020096950A1 (fr)

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