WO2020096773A1 - Aperiodic nano-optical array for angular shaping of incoherent emissions - Google Patents
Aperiodic nano-optical array for angular shaping of incoherent emissions Download PDFInfo
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
- G02B5/021—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
- G02B5/0221—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures the surface having an irregular structure
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/30—Collimators
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/65—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction specially adapted for changing the characteristics or the distribution of the light, e.g. by adjustment of parts
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/02—Diffusing elements; Afocal elements
- G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
- G02B5/0252—Diffusing elements; Afocal elements characterised by the diffusing properties using holographic or diffractive means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
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- H—ELECTRICITY
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V5/00—Refractors for light sources
- F21V5/002—Refractors for light sources using microoptical elements for redirecting or diffusing light
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/30—Semiconductor lasers
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B2207/00—Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
- G02B2207/101—Nanooptics
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
Definitions
- Embodiments herein generally relate to structures formed upon surfaces to shape light emitted from a luminescent source.
- modem systems implement some form of photonics.
- many modem electronic devices include some form of light generation.
- a significant problem in a number of light emission systems e.g., projectors, automotive headlights, structured lighting systems, etc.
- emission from the light-emitting device occurs in a hemispherical distribution.
- collimating optics for such systems include multiple aspheric lenses and large convex mirror structures.
- fabrication of low cost and/or small footprint collimating optics beyond angles of ⁇ 60° is exceedingly difficult, particularly when the numerical aperture exceeds 0.87.
- maintenance of high image quality or high contrast in any projected image is difficult. In some cases, not collecting light beyond ⁇ 60° results in a loss of approximately 25% of the total emitted light.
- Some lighting applications utilize phosphor conversion materials to convert high power pump light into longer wavelength light.
- blue or ultra violet (UV) light emitting diodes LEDs
- UV light emitting diodes LEDs
- UV light emitting diodes LEDs
- UV light emitting diodes LEDs
- UV light emitting diodes LEDs
- UV light emitting diodes LEDs
- Such converted light emission devices suffer similar problems to other light emission devices, in that collection of emissions at high-angles is a challenge.
- a variety of methods have been proposed to collect high-angle light emission from phosphor converted light sources.
- bonding a lens to the surface of the phosphor plate can improve light extraction from the phosphor into air, but at a large cost in luminance.
- the cost in luminance can be at least (n lens /n ph ) , where mens is the refractive index of the lens material and n Ph is the refractive index of the phosphor.
- YAG yttrium aluminum garnet
- refractive indices are on the order of 2.0 to 2.2, resulting in an even greater luminance loss.
- a photonic lattice constructed of pillars arranged in periodic arrays, can be applied to the surface of the phosphor.
- the photonic lattice functions similarly to a two dimensional (2D) grating, which can diffract the internal light distribution within the phosphor into desired emission directions.
- 2D two dimensional
- Such lattice structures can narrow emission angles in some cases, but several problems arise.
- FIG. 1A illustrates an example of a dielectric pillar in accordance with various implementations.
- FIG. IB illustrates an example of an aperiodic array of a number of dielectric pillars in accordance with various implementations.
- FIG. 2 illustrates a first example illumination device in accordance with various implementations.
- FIG. 3A, 3B, and 3C illustrate examples of aperiodic arrays modeled on the Vogel spiral in accordance with various implementations.
- FIG. 4 illustrates a first diagram in accordance with various implementations.
- FIG. 5 illustrates a second diagram in accordance with various implementations.
- FIGS. 6A, 6B, 6C, and 6D illustrate example graphs in accordance with various implementations.
- FIG. 7 illustrate another example graph in accordance with various implementations.
- FIG. 8 illustrates a logic flow in accordance with various implementations.
- FIGS. 9A, 9B, 9C, 9D, 9E, 9F, 9G, and 9H illustrate an example aperiodic array during various stages of manufacture in accordance with various implementations.
- FIGS. 10A, 10B, and 10C illustrate graphs of various experimental variations in parameters of an aperiodic array in accordance with various implementations.
- FIG. 11 illustrates a second example illumination device in accordance with various implementations.
- FIG. 12 illustrates a third example illumination device in accordance with various implementations.
- FIG. 13 illustrates a fourth example illumination device in accordance with various implementations.
- aperiodic arrays applied to or formed on the emission side of an emitting or wavelength converting material surface.
- the aperiodic array is formed from a number of nano-structures arranged in a two-dimensional (2D) aperiodic pattern.
- phosphor conversion materials are often used to convert pump light into a longer wavelength light to access spectral regions not available directly through electrical-to- light conversion (or providing light there with better efficiency).
- the present disclosure can be applied to light emission devices that use phosphor. For example, phosphor conversion from blue or UV LEDs is often used to generate white or other desired longer wavelength emissions.
- An aperiodic array of structures can be applied to the surface of the phosphor to direct the emission to a desired distribution shape or angular limit.
- the present disclosure provides a number of dielectric scattering pillars, arranged to form a close-packed aperiodic array, such as a Vogel spiral, where the geometries of the aperiodic spiral produce azimuthally isotropic scattering of luminescence within a restricted angular cone of extraction.
- the angular cone of extraction is uniquely defined by the aperiodic geometry of the spiral.
- parameters of the spiral such as scaling factor, divergence angle (i.e., golden angle), pillars aspect ratio, or the like can be manipulated to provide a desired angular cone of extraction.
- aperiodic structures can generate far-field (Fourier transform) patterns with no preferred azimuthal directions. Therefore, the aperiodic structures of the present disclosure can provide confinement of light emissions to within a desired angular emission cone. It is to be appreciated that the highest density of extracted k-vectors in proximity of the forward direction can be achieved only when considering diffraction from structures that possess annular regions in their Fourier spectrum. This can be deduced from kinematic diffraction theory. However, this condition cannot be met using traditional periodic arrays.
- the present disclosure provides aperiodic structures, with rotationally symmetric k-space designed to meet the kinematic scattering condition for directional forward extraction.
- this type of structure can reduce light emission into far-field emission angles above ⁇ 60°.
- emission from the light-emitting device occurs in a hemispherical distribution, often well approximated by a Lambertian characteristic (particularly for the optically thick, luminescent, radiation converting (or producing) layer).
- Structures and devices according to the present disclosure can thus greatly improve the collection efficiency of secondary optics or downstream projection systems versus the efficiency of conventional systems. It is to be appreciated that the collection efficiency is increased without undesirable high angle artifacts that are typical of traditional periodic structures.
- Light emission devices that implement the present disclosure can be smaller in size than conventional devices due to the reduced angular collection requirements. Furthermore, a lower collection angle can reduce aberrations, which may result in higher quality imaging or projection of the light source. This can have advantages in a number of applications, such as, for example, forward automotive lighting where high contrast projection is needed on the roadway to minimize glare.
- the present disclosure provides that some light emissions (e.g., above the far-field emissions angles) are scattered back into the converting material (e.g., phosphor, or the like).
- the converting material e.g., phosphor, or the like.
- the angular restriction will have a low impact on efficiency.
- losses in a phosphor converted LED can be kept low with overall losses being less than merely truncating the emission to within a desired cone. This can provide a higher extraction efficiency relative to conventional emission extraction methods.
- Another benefit is that source (emitting surface) etendue is reduced without significantly degrading overall efficiency or efficacy while increasing luminance.
- the internal radiation incident on the emitting surface is approximately Lambertian. If the emitting surface furthermore has no structures for angular control, light emission is also Lambertian (because radiance is conserved), implying that emitted light into a ⁇ 60° angular cone may be approximately 75% of the total generated light emission. With some embodiments herein, light emission into the same specific angular cone may exceed 85-90%, for example, depending on the effective reflectivity of the pump light source.
- the aperiodic structure can be applied to the phosphor converter in a chip-level conversion (CLC) configuration.
- the phosphor converter can be a flat plate that is bonded to a pump LED emitting surface (e.g., using glue, or other bonding materials). The phosphor then emits directly into air from a flat surface of area equal (or similar) to the pump device emission area.
- the aperiodic structure can decrease emission angle while preserving the minimal emission area of the phosphor surface, especially when emission from the edges of the phosphor plate are covered by highly reflective media such as highly loaded TiCh powder in silicone matrix. Accordingly, luminance (or radiance) may increase with a minimal penalty in total luminous flux or radiant power.
- FIG. 1A illustrates an example embodiment of a dielectric scattering pillar while FIG. IB illustrates an example embodiment of an array formed from a number of dielectric scattering pillars of FIG. 1A.
- a dielectric scattering pillar 100 also referred to herein as a“nano-structure” or simply“structure” is shown.
- the structure 100 is depicted as a cylinder, having a height (h) 101 and a diameter (/)) 103.
- the structure 100 can be formed of the same material as phosphor emitter layer 220 shown in FIG. 2.
- the structure 100 can be formed from dense titanium dioxide (TiCh) film/thin layer.
- the structure 100 need not have a cylinder shape.
- the structure can be rectangular, cone, or pyramid shaped and have dimensions depending on the refractive index of its material.
- An aperiodic array can be formed from a number of the structures 100.
- FIG. 1B depicts an aperiodic array 120 including a number of structures 100.
- an aperiodic pattern can be formed from a number of pillars 100-1, 100-2, 100-3, 100-4, ... 100-h (where n is a positive integer).
- the pillars 100 within the aperiodic array 120 are spaced an average center-to-center distance from each other ⁇ r> 105.
- the term“center-to- center” or“center-to-center distance” means the average distance from the center of one pillar 100 to the center of an adjacent pillar 100. The center to center distance is often referenced as ⁇ r>.
- the ⁇ r> 105 depicted in FIG. 1B is from the center of a pillar 100 to the center of an adjacent pillar 100.
- ⁇ r> 105 in FIG. 1B depicts the average center-to- center distance ⁇ r> 105 from the center of pillar 100-3 to the center or pillar 100-4.
- the average between the center-to-center spacings of all pillars is meant. It is noted, that the spacing between selected ones of the pillars 100 (e.g., between pillars 100-1 and 100-2) may not be the same as the spacing between other selected ones of the pillars (e.g., between 100-2 and an adjacent pillar besides 100-1).
- the aperiodic array 100 can be engineered to have a closed-packed geometry, which produces azimuthally isotropic scattering of luminescence within a restricted angular cone of extraction.
- the restricted angular cone of extraction is defined uniquely by the aperiodic geometry of the array. Accordingly, modification of various parameters associated with the aperiodic geometry of the array 120 will affect the restricted angular cone. For example, modifying any one or a combination of the scaling factor, the divergence angle (which can approach the golden angle), or the aspect ratio of the structures 100, the pillar height (h) 101, the pillar diameter ( D ) 103, or the average spacing ⁇ r> 105 can affect the restricted angular cone.
- FIG. 2 depicts a block diagram of an example illumination device 200 implementing an embodiment of the present disclosure.
- the illumination device 200 includes a light source 210, a phosphor layer 220, and the aperiodic array 120.
- the aperiodic array 120 is located on the phosphor layer 220.
- the light source 210 emits a light beam into the phosphor layer 220, where a portion of the light beam is changed to light of a different wavelength.
- the combination of the originally emitted light and the changed light often results in a spectral light distribution having a wavelength longer than the originally emitted light.
- the light source 210 can be arranged to emit light (e.g., photons) 211 in either the blue light range or the ultra-violet (UV) light range. Assuming the light source emits blue photons 211, the blue photons 211 can either travel through the phosphor layer 220 unchanged or they may be converted into photons 213 for example in the yellow light range. The combination of the blue photons 211 and yellow photons 213 can combine to generate a white light emitted by the device 200.
- light e.g., photons
- UV ultra-violet
- the present disclosure could be implemented with full conversion type devices, or those where the pump light (e.g., all or nearly all blue photons 211) is completely or substantially absorbed in the conversion layer (e.g., phosphor layer 220). Examples are not limited in these contexts.
- the aperiodic array 120 is disposed or formed on the phosphor layer 220 and provides that the photons 211 and 213 emitted from the aperiodic array 120 are restricted to a specific angular cone. Further examples of this are given below.
- the illumination device 200 can be any illumination device where phosphor is used to change the wavelength of the output light beams.
- the illumination device could be a phosphor coated light emitting diode (LED), or a laser activated remote phosphor (LARP) device. Examples are not limited in this context.
- the phosphor layer 220 can include a range of luminescent materials.
- the phosphor layer 220 may include a polymer (e.g., silicone) matrix with embedded grains of powder phosphors, phosphor grains in a glass matrix (P-i-G), monolithic ceramic phosphors, monolithic single crystal phosphors, various coatings and thin film phosphors including those from physical vapor deposition (PVD, e.g., pulsed-laser deposition, PLD) and chemical vapor deposition (CVD) onto transparent substrates, and other phosphor configurations.
- PVD physical vapor deposition
- PLD pulsed-laser deposition
- CVD chemical vapor deposition
- the phosphor platelet is typically a bulk/monolithic poly crystalline ceramic phosphor (e.g., cerium- activated garnet phosphor represented by the formula A 3 B50i2:Ce, wherein A is Y, Sc, La, Gd, Lu, or Tb and B is Al, Ga or Sc).
- the phosphor layer 220 can be at least one ofY 3 Al 5 Oi 2 :Ce, (Y,Gd) 3 Al50i2:Ce, (Lu,Y) 3 Al50i2:Ce and Lu 3 Al50i2:Ce.
- the phosphor layer 220 could include ceramic phosphor materials from another oxide, nitride, oxynitride, fluoride, or the like.
- such ceramic phosphors may contain additional phases such as AL0 3 to change scattering behavior, increase thermal conductivity, or achieve certain adhesion properties to the bonding material.
- the phosphor layer 220 could include other phosphors such as various aforementioned materials doped with other ions including Eu 2+ , Eu 3+ , Pr 3+ , Dy 3+ or transition metal ions like Mn 2+ , Mn 4+ , Cr 3+ or the like.
- the doping ions may depend on the wavelength of the pump (e.g., light source 210).
- Such phosphor layers 220 can be provided in applications to achieve a wide range of color coordinates or spectral content for the wavelength converter.
- the phosphor layer 220 can be formed by using a number of techniques, including mixing the phosphor particles with an organic binder, molding the desired shape, and burning out the organic binder followed by a final high-temperature sintering to form a monolithic piece.
- the phosphor layer 220 may include single crystal ceramics or powder phosphor embedded in various inorganic (e.g., such as a low-temperature glass) or numerous organic matrix materials. For example, some combination of phosphor powder and lower melting point glasses (e.g., P-i-G, or the like) can be used.
- the phosphor layer 220 could include a thin film phosphor. Such phosphor layers 220 may allow excitation in the ultra violet (UV) range and emission in the visible range. Additionally, such phosphor layers may incorporate quantum dots (QDs) into a range of various matrix materials, from organic to inorganic. Such a phosphor layer 220 could be made by a variety of methods (e.g., pulsed-laser deposition (PLD), sputtering, ion- beam, chemical vapor deposition (CVD), metal-organic CVD (MOCVD), or the like). These manufacturing methods may facilitate use of conversion materials such as InGaN, ZnO, AllnGaP and a variety of other semiconductor materials that require an epitaxial film.
- PLD pulsed-laser deposition
- CVD chemical vapor deposition
- MOCVD metal-organic CVD
- the aperiodic array of structures (e.g., the aperiodic array 120 of structures 100) can have a geometry modeled after a Vogel spiral.
- Vogel spirals are one example of possible engineered aperiodic structures for controlling the directional properties of luminescence.
- a number of examples of aperiodic structures are presented herein that have a geometry of a Vogel spiral. However, this is not intended to be limiting.
- the aperiodic array (e.g., the array 120) is formed from a number of pillars (e.g., pillars 100) placed at coordinates:
- n is a positive integer representing the pillar number and while a and a are constants.
- the golden angle (GA) Vogel spiral can be used.
- the GA Vogel spiral has a deterministic nature while having isotropic filling of k-space within a desired annular region.
- the impact an aperiodic array of structures (such as those depicted in FIG. 1B, FIG. 3 A, FIG. 3B, and FIG. 3C) has on the angular cone of light emissions is influenced by the diffraction from the aperiodic array pattern, the effective directional or antenna properties of individual pillar in the aperiodic array, and the properties of the luminescent radiation within the phosphor plate that is incident on the array. Accordingly, the present disclosure provides a discussion of such characteristics. As a starting point, assume each pillar to be independent from one another and neglect interactions between pillars.
- aperiodic array as a phase-amplitude mask for the incident light with a more general description of the radiation scattering properties of the pillars.
- This theory can be extended to approximate aperiodic arrays where the pillars interact with each other. For example, assume the scattering of the net incident field (e.g. electric field component of radiation) by a particular pillar to be from the superposition of the true incident field and the perturbing field generated by scattering from neighboring pillars.
- the net incident field e.g. electric field component of radiation
- the wavefront of light just behind the aperiodic array within the phosphor is a wide-sense stationary random wavefront (i.e., the 2 nd order statistics do not vary with position but are still spatially correlated).
- the following formula for the scattered far-field radiant intensity /(uo) (W/sr) from the array can be derived.
- the radiant intensity is the power per unit steradian emitted into air (or another output medium). In the case of identical pillars, the radiant intensity is:
- Equation (2) assumes that the pillars are strongly scattering and spaced closely enough together such that specular transmission is small. This is essentially equivalent to the result that one would obtain with kinematic diffraction theory.
- l 0 is the free-space wavelength
- n is the refractive index of the phosphor.
- radiance Ls is the net radiance incident on the aperiodic array from the phosphor side. This net radiance can be the radiance that results from multiple
- Ls would be a directionally constant radiance.
- the scattering function P(u 0 , u ) is related to the single pillar scattering amplitude 2 x 2 tensor a(u 0 , u ) by the following relation:
- FIG. 4 illustrates a diagram 400 showing definitions of transverse wavevectors and propagation angles for incident radiance distribution /. ⁇ (u). This figure depicts wavevectors (k) 401 propagating through a phosphor layer 220 as well as an aperiodic array 120.
- the aperiodic array 120 changes the angle ( Q ) 403 of propagation of the wavevectors 401 as they enter the output medium 430 (e.g., air), which is represented by the overall radiance distribution Zs(u).
- the output medium 430 e.g., air
- the structure function S describes the Fourier power spectrum of the diffracted light from the aperiodic array of pillars, represented as:
- the spectral power density S is integrated over all propagating transverse wavevectors u within the converting medium (e.g., phosphor layer 220, or the like).
- the refractive index of the converting medium is greater than that of the emitting medium, which is typically air.
- the available transverse wavevectors u ⁇ k spans a larger space than available wavevectors uo ⁇ ko in the output medium.
- the incident radiance Ls can be considered a constant.
- n p is the refractive index of the pillar (e.g., pillar 100, or the like)
- Ji(x) is the first order Bessel function
- x (u 0 , u ) is a slowly varying angular function that accounts for the incident and scattered polarizations for a randomly polarized incident field. Further neglecting the far- field angular variation of the pillar scattering, P and L can both be treated as constants in
- FIG. 5 depicts a diagram 500 illustrating an optimal structure function S 501 for producing emission in a forward direction component even with fully Lambertian light incident on the aperiodic array 120 from within the phosphor layer 220.
- the structure function S can have the form of the following equation.
- FIGS. 6A-6D and 7 illustrate the combined role of both the far-field scattering pattern from the array elements P and array pattern as given by the structure factor S has on the resultant restricted emission cone.
- FIG. 6B illustrates a graph 603, depicting a representation of why Equation (7) yields the highest potential forward directionality as discussed herein. More specifically, graph 603 illustrates the principle of light scattering from an isotropic k-space structure to enhance directional emission.
- Ring 603-A is a set of wave vectors propagating in the high index medium (e.g., the phosphor layer 220, or the like) while ring 603-B represents the dominant feature of S(G).
- Each rings 603-C represents the set of input vectors scattered by a single array momentum vector G. It is noted, that rings 603-C strongly overlap near the center but minimally overlap near the edges, which leads to enhanced forward emission.
- the vectors indicate how a single incident wave vector b phase matches with a moment vector G to produce a scattered vector b' which is nearer to the center of the light cone.
- FIGS. 6C and 6D illustrate graphs 605 and 607, respectively.
- FIG. 7 illustrates a graph 700 depicting a number of the Fourier space images representing intensity profiles for a number of different emissions.
- Graph 700 is organized into rows 710 and columns 720.
- the first row 710-1 represents the described model
- the second row 710-2 represents measurements made on a patterned region of a sample
- the third row 710-3 represents measurements made on an un-pattemed region of the same sample.
- Columns 720 correspond to different patterns of aperiodic arrays having a pillar diameter of 410 nanometers (nm) and a height of 330 nm.
- column 720-1 represents an aperiodic array with a mean nearest neighbor separation of 220 nm
- column 720-2 represents an aperiodic array with a mean nearest neighbor separation of 300 nm
- column 720-3 represents an aperiodic array with a mean nearest neighbor separation of 380 nm
- column 720-4 represents an aperiodic array with a mean nearest neighbor separation of 450 nm.
- the graph was generated from free-standing ceramic phosphor plates under laser excitation at 405 nm.
- Each of the intensity profiles referenced in this figure (e.g., intensity profile at [710-1, 720-1], etc.) has a white circle with a radius of 0.8, equal to the numerical aperture (NA) of the microscope objective used for making the Fourier space images.
- NA numerical aperture
- Ls the role of the radiance distribution (light incident on the array of structures) Ls is quite complex. In practical devices, the need for high light extraction without an increase in etendue usually requires that the illumination element (e.g., LED, laser, etc.) or the entire structure itself has some degree of volume and/or surface scattering.
- Typical illumination devices optimized for light extraction of the converted radiation provide a final radiance distribution incident on the aperiodic array disposed on the phosphor that is close to Lambertian, as used in the example calculations discussed with reference to Equations (1) to (7).
- the radiation may also have some degree of intensity enhancement due to cavity effects that ultimately lead to higher extraction efficiencies. For example, in the case of a LARP device, higher degrees of volume scattering are often necessary for good spot confinement (high luminance).
- aperiodic arrays such as those depicted in FIG. 1B and FIGS. 3A-3C can be engineered for devices where the incident light distribution significantly deviates from Lambertian.
- an aperiodic array having a pattern based on GA Vogel spirals can provide emission with controlled angular spread.
- various parameters of the pattern of the aperiodic array 120 such as, the height (h) 101 of the pillars 100, the diameter ( D ) 103 of the pillars 100, and the average spacing between pillars ⁇ r> 105 can be manipulated to limit emission to within a desired angular cone.
- these parameters can have the following ranges for luminescence wavelengths in the green to red visible range (i.e., 500 - 650 nm).
- these parameters can have the following ranges for luminescence wavelengths centered near 550 - 570 nm.
- the height (h) can be constrained according to Equation (6). For example, considering the phase delay accumulated by propagation through the pillar in Equation (6), it follows that maximum scattering occurs when the field generated by the pillar is in-phase with the incident field in air, yielding:
- Equation (12) may provide maximal backscattering, which can be useful to design an aperiodic array where a region of wavevectors are rejected by the aperiodic array, reflecting them back into the phosphor layer 220.
- FIG. 8 illustrates a logic flow 800 to fabricate an aperiodic array, according to some examples of the disclosure.
- FIGS. 9A-9H illustrate an example of an aperiodic array during various stages of manufacture. These figures are discussed in conjunction with logic flow 800 from FIG. 8.
- Logic flow 800 can begin at block 810“deposit a dielectric onto a phosphor layer” where dielectric is deposited onto a phosphor layer.
- FIG. 9A depicts dielectric 901 deposited onto phosphor layer 220.
- the dielectric 901 can be titanium oxide (TiCh).
- TiCh can be deposited (e.g., via sputtering, or the like) onto a cerium doped yttrium aluminium garnet (Ce:YAG), or like phosphor layers.
- TiCh can be deposited by DC sputtering under a base pressure (66.6% Seem argon + 33.3% Seem 0 2 ) of 2.5 m Torr. TiCh target with a purity of 99.998% and a 3-inch diameter. The target-substrate distance can be fixed at 10 cm. Furthermore, in some examples, periodic motion of 5 rpm of the substrate (e.g., phosphor layer 220) is applied during deposition. As another example, TiCh can be deposited onto a pre-cleaned Ce:YAG substrate via magnetron sputtering with a DC power of 240 W. In some implementations, the phosphor layer 220 can be cleaned (e.g., prior to deposition) to remove contaminations.
- the phosphor layer 220 can be cleaned by sonication with acetone and ethanol for a period of time (e.g., 5-15 minutes, or the like).
- the phosphor layer 220 can be cleaned via Oxygen etching, such as, at 300 W with a flow rate of 150 Seem for a period of time (e.g., 2.5 to 10 minutes, or the like).
- FIG. 9B depicts resist 903 applied over dielectric 901.
- the resist 903 can be a polymethyl methacrylate (PMMA) polymer-based resist, which can be spin-coated on to the dielectric 901.
- PMMA polymethyl methacrylate
- FIG. 9C depicts resist 903 exposed to EBL 905.
- resist 903 can be exposed to EBL 905 with a dose of 200 m C/cm2 at a current of 36-37 pA.
- the resist layer can be developed, for example, in a solvent to reveal the exposed pattern. For example,
- FIG. 9D depicts portions of resist 903 dissolved in solvent to reveal a pattern.
- a solvent e.g., acetone, isopropyl alcohol (IP A), iso-methyl-butyl-ketone (IMBK), or some combination of these
- IP A isopropyl alcohol
- IMBK iso-methyl-butyl-ketone
- a mask can be applied over the resist and exposed dielectric.
- FIG. 9E depicts mask 907 applied over the patterned resist 903 and the exposed portions of the dielectric 901.
- the mask can be composed of chromium (Cr).
- the resist can be removed, thereby leaving only portions of the dielectric masked.
- FIG. 9F depicts the resist 903 removed and only portions of the dielectric 901 masked with mask 907.
- RIE reactive ion etching
- FIG. 9G depicts the dielectric 901 etched via RIE 909 to form dielectric pillars 100.
- FIG. 9H depicts aperiodic array 120 including dielectric pillars 100 formed on phosphor layer 220.
- an aperiodic array e.g., aperiodic array 120, or the like
- pillars for an aperiodic array 120 could be formed directly from a converting layer, as opposed to from a dielectric as depicted and discussed in FIG. 8 and FIGS. 9A-9H.
- operation 810 could be omitted and a resist could be applied directly to the phosphor layer 220 at operation 820.
- Manufacturing could continue as discussed, or using other techniques, to form the pillars 100 of the aperiodic array 120 from the phosphor layer 220 directly. Examples are not limited in this context.
- some implementations provide the phosphor layer 220 excited by a light source 210 from the back side while the aperiodic array 120 disposed on the front side of the phosphor layer 220 restricts light emission to within a particular emission cone.
- the graph 700 of FIG. 7, which depicts Fourier space images is from such an
- the ceramic layer 220 was free-standing ceramic phosphor excited by a laser, from the back side, at 405 nm.
- the excitation wavelength of the pump source 210 may coincide with the absorbing excitation band of the luminescent material.
- the far-field pattern changes from ring type to a central localized enhancement as the radius of the main ring in the structure function of the aperiodic array 120 (e.g., Vogel spiral, or the like) goes from being above the propagating waves in the phosphor layer 220 to being about equal to k (e.g., refer to Equation (7)). It is noted that both the experimental data (row 710-2) and the approximate theoretical calculations (row 710-1) are in good qualitative agreement.
- row 710-3 shows the same platelets excited by 405 nm light, but off the array.
- the weak ring structure observed in the periphery is consistent with emission of converted light in low scattering transparent phosphors.
- FIGS. 10A, 10B, and 10C illustrates graphs showing various experimental variations in parameters of an aperiodic array. Note, that each of the graphs plot radiance g ⁇ h of outgoing emission as a function of normalized directionality of the emission b '/k 0 .
- pillar diameter 103 has a minimal effect on directionality with a maximum at 250 nm ⁇ D ⁇ 280 nm.
- pillar diameter 103 has a minimal effect on directionality with a maximum at 250 nm ⁇ D ⁇ 280 nm.
- Directional enhancement of up to 35% is noted in the forward direction as ⁇ r> increased from 220 nm to 450 nm.
- graphs 1001 and 1002 were obtained from experimental data using a free-standing ceramic LuAG phosphor plate, which may not exhibit full Lambertian incident radiation in the phosphor.
- FIG. 10C depicts graph 1003, illustrating theoretically modeled directional enhancement, which shows agreement with the experimental graphs 1002 of FIG. 10B.
- FIG. 11 depicts a block diagram of an example illumination device 1100
- the illumination device 1100 includes a light source 210, a phosphor layer 220, the aperiodic array 120, and a dichroic layer 1130.
- the dichroic layer 1130 is disposed on a back side of the phosphor layer 220 while the aperiodic array 120 is disposed on a top or front side of the phosphor layer 220.
- the light source 210 emits a light beam (photons 211) into the phosphor layer 220, thereby exciting the phosphor layer 220 and causing emission of photons 213.
- the dichroic layer 1130 is arranged to pass or transmit light of the wavelength emitted by light source 210 (e.g., blue light, or the like) while reflecting other, longer wavelength light (e.g., yellow light, or the like).
- the phosphor layer 220 emits photons 213 from both the front and back side of the phosphor layer 220. However, due to the dichroic layer 1130, photons 213 are reflected back into the phosphor layer 220. It is noted, that light emitted by the phosphor layer 220 (e.g., photons 213, or the like) may experience greater scattering and therefore the radiance distribution behind the array ( Ls ) may generally become close to Lambertian.
- the loss of directional characteristics in the radiance distribution may reduce directional effects of the final emitted light from the aperiodic array 120 into the output medium (e.g., air, or the like).
- the specific spectral characteristics of the aperiodic array 120 provide more tolerance to the incident radiance distribution than other configurations (e.g., periodic arrays, lenses, etc.).
- FIG. 12 depicts a block diagram of an example illumination device 1200
- the illumination device 1200 includes a forward-emitting LED 1240 formed on substrate 1210 and having LED mirror 1241 disposed on a back surface of the forward-emitting LED 1240 and an LED extraction layer 1242 disposed on a top surface of the forward-emitting LED 1240.
- a phosphor layer 220 is directly attached to the top surface (e.g., LED extraction layer 1242) of the forward-emitting LED 1240 via a bonding layer 1250 (e.g., adhesive film, or the like).
- the aperiodic array 120 is disposed on the top surface of the phosphor layer 220.
- the configuration depicted in this figure may be typically referred to as a chip-level conversion (CLC) device.
- CLC chip-level conversion
- the LED 1240 can be a blue emitting InGaN LED including the LED mirror 1241 and LED extraction layer 1242 (e.g., highly roughed surface, or the like).
- the phosphor layer 220 can be a ceramic phosphor (e.g., or P-i-G, or one of the many other phosphor layers discussed herein).
- pump light 1201 from the LED 1240 is partially or fully absorbed in the phosphor layer 220.
- Converted light 1203 e.g., luminescence
- Surface scattering and volume scattering within the phosphor change the radiance distribution inside the phosphor and incident on the aperiodic array covered emitting surface. This final radiance distribution inside the phosphor, but incident on the array, determines the net angular emission profile into the output medium (e.g., air, or the like).
- Volume scattering within the phosphor layer 220 can be produced by pores, phosphor particles or additional material phases, grain boundaries, and other scattering centers (refractive index contrast steps) that can be introduced into the phosphor layer 220.
- This figure further depicts a polar plot (dashed line) of a conventional far-field radiant intensity distribution 1205, which is typical from the surface of a phosphor layer with an unstructured surface. Additionally, this figure depicts a plot (dashed-dotted line) of a sample far- field radiant intensity distribution 1207 generated by the aperiodic array 120, which has a narrower profile than the conventional distribution 1205. It is noted, on the bottom side of the phosphor layer 220 (e.g., the LED 1240 side of the phosphor layer 220) surface scattering results from the net effect of the interface between the bonding layer 1250, the LED extraction layer 1242 and the LED mirror 1241.
- the plots 1205 and 1207 are plotted against polar axis 1209.
- the pump light 1201 exiting the phosphor layer 220 will have a different internal radiance distribution than the converted light 1203.
- the aperiodic array 120 can be configured or arranged to control the angular profile of both converted light 1203 and pump light 1201. Said differently, as the phase response and far-field scattering of the pillars 100 within the aperiodic array 120 are wavelength dependent, an aperiodic array 120 could be engineered to affect both pump light 1201 and converted light 1203.
- FIG. 13 depicts a block diagram of an example illumination device 1300
- the illumination device 1300 includes a laser pump device 1340 arranged to emit pump light 1301 directed to a phosphor layer 220 with an aperiodic array 120 disposed on the phosphor layer 220.
- the phosphor layer 220 is disposed on a transparent substrate 1350 via a bonding layer 1351 (e.g., adhesive, or the like).
- the laser pump device 1340 can be a focused or closely spaced blue diode laser.
- the illumination device 1300 further includes secondary optics 1360 (e.g., a collimation lens, or the like) disposed downstream from the laser pump device 1340 and the phosphor layer 220.
- the illumination device 1300 is often referred to as a laser-activated remote phosphor (LARP) device.
- LARP laser-activated remote phosphor
- Such a LARP device can have either reflective geometry (pump light incident on phosphor from the side of aperiodic array, not depicted in this figure) or transmissive geometry (depicted in this figure).
- the phosphor layer 220 can be a ceramic phosphor (e.g., P-i-G, or one of the many other phosphor layers discussed herein).
- the aperiodic array 120 restricts the angular emission of the far- field pattern such that the secondary optics 1360 can collect more converted light 1303 and pump light 1301 within its numerical aperture compared to that from a surface without an aperiodic array.
- the pump light 1301 exiting the phosphor layer 220 will have a different internal radiance distribution than the converted light 1303, and therefore may be controlled differently by the aperiodic array 120 to achieve desirable effects.
- the aperiodic array 120 may be designed to also control the angular emission of the pump light 1301 in addition to the converted light 1303.
- illumination device 1300 could optionally include a dichroic layer.
- the dichroic layer could be disposed on the phosphor layer 220 or on the transparent substrate 1350.
- an illumination device having a light source to emit a first light beam having a wavelength within a first range of wavelengths, a converting material arranged such that the light beam is incident on the converting material, the converting material to emit a second light beam having a wavelength within a second range of wavelengths, the second range of wavelengths different from the first range of wavelengths, and an aperiodic array disposed on the converting material, the aperiodic array including a plurality of pillars arranged to form an aperiodic pattern, the aperiodic array to restrict emission of the second light beam to within a restricted angular cone.
- the aperiodic array includes circularly symmetric Fourier k- space to produce azimuthally isotropic scattering of luminescence within the restricted angular cone.
- the plurality of pillars forms a Vogel spiral.
- the plurality of pillars forms a golden angle Vogel spiral.
- the converting material includes phosphor. In some implementations, the converting material has the composition A3B50l2:Ce, wherein A is selected from the group consisting of Y, Sc, La, Gd, Lu, or Tb and B is selected from the group consisting of Al, Ga or Sc. In some implementations, the second wavelength range is between 500 nanometers and 600 nanometers. In some implementations, the light source is a light emitting diode (LED). In some implementations, the first wavelength range is between 430 nanometers and 495 nanometers or between 375 nanometers and 410 nanometers. In some implementations, the converting material is disposed on a top surface of the LED. In some implementations, the light source is a laser.
- the illumination device further includes collection optics arranged downstream from the converting material.
- a mean center-to-center spacing between each of the plurality of pillars is between 300 and 500 nanometers.
- each of the plurality of pillars has a height of between 100 nanometers and 1,000 nanometers.
- each of the plurality of pillars is cylindrically shaped and has a diameter of between 100 nanometers and 300 nanometers.
- aperiodic array to restrict illumination emissions to within an angular cone
- the aperiodic array including a substrate, and a plurality of dielectric pillars disposed on the substrate and arranged to form an aperiodic array, the plurality of dielectric pillars to cooperate to produce azimuthally isotropic scattering of incident luminescence to within a restricted angular cone.
- each of the plurality of dielectric pillars includes a transparent dielectric.
- each of the plurality of dielectric pillars includes titanium dioxide (Ti02), titanium nitride (TiN), silicon (Si), silicon nitride (SiN), or doped oxides.
- the aperiodic array is a Vogel spiral.
- a mean center-to-center spacing between each of the plurality of pillars is between 0.25 and 2.5 times the wavelength of the incident luminescence.
- each of the plurality of pillars is cylinder shaped, cone shaped, pyramid shaped, or rectangular shaped.
- each of the plurality of pillars is cylindrically shaped and has a height of between 100 nanometers and 1,000 nanometers and a diameter of between 100 nanometers and 300 nanometers.
- the substrate includes phosphor.
- Other aspects disclosed herein includes a method of manufacturing an aperiodic array to restrict illumination emissions to within an angular cone, the method including applying a pattern, to mark a plurality of pillars arranged in an aperiodic array, onto a substrate including a wavelength converting material arranged to emit light of a first wavelength responsive to incidence of light of a second, different, wavelength, and forming the plurality of pillars from the substrate.
- the method further includes depositing a dielectric material into the wavelength converting material, and etching the dielectric material to form the plurality of pillars.
- the aperiodic array is a Vogel spiral.
- each of the plurality of pillars is cylindrically shaped and has a height of between 100 nanometers and 1,000 nanometers and a diameter of between 100 nanometers and 300 nanometers, and a mean center-to-center spacing between each of the plurality of pillars is between 0.25 and 2.5 times the first wavelength.
- Some embodiments may be described using the expression“one embodiment” or“an embodiment” along with their derivatives. These terms mean that a feature, structure, or characteristic described in relation to the embodiment is included in at least one embodiment.
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| DE112019005534.8T DE112019005534B4 (en) | 2018-11-05 | 2019-10-23 | APERIODIC NANO-OPTIC ARRAY FOR ANGLE SHAPED INCOHERENT EMISSIONS |
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| JP7568230B2 (en) * | 2021-08-25 | 2024-10-16 | 国立大学法人京都大学 | Wavelength conversion device and lighting device |
| US12327978B2 (en) * | 2021-09-23 | 2025-06-10 | Osram Opto Semiconductors Gmbh | Semiconductor light source with a mirror coating and method |
| JP2024091554A (en) * | 2022-12-22 | 2024-07-04 | スタンレー電気株式会社 | Light-emitting device |
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| US20130235557A1 (en) * | 2010-10-22 | 2013-09-12 | Osram Gmbh | Led light source and associated structural unit |
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| US20070085098A1 (en) * | 2005-10-17 | 2007-04-19 | Luminus Devices, Inc. | Patterned devices and related methods |
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| US11294195B2 (en) | 2022-04-05 |
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