TWI788612B - Color uniformity in converted light emitting diode using nanostructures - Google Patents
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- 239000002086 nanomaterial Substances 0.000 title abstract description 93
- 239000000758 substrate Substances 0.000 claims description 70
- 239000004065 semiconductor Substances 0.000 claims description 35
- 238000006243 chemical reaction Methods 0.000 claims description 31
- 230000000737 periodic effect Effects 0.000 claims description 12
- 238000000149 argon plasma sintering Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 abstract description 36
- 239000010410 layer Substances 0.000 description 211
- 239000004038 photonic crystal Substances 0.000 description 16
- 230000003287 optical effect Effects 0.000 description 15
- 239000002245 particle Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 229910002601 GaN Inorganic materials 0.000 description 8
- 238000005452 bending Methods 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 239000002110 nanocone Substances 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 239000000539 dimer Substances 0.000 description 5
- 230000003993 interaction Effects 0.000 description 5
- 239000002105 nanoparticle Substances 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 238000002845 discoloration Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 238000003462 Bender reaction Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000007799 cork Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000010431 corundum Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005553 drilling Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 206010047571 Visual impairment Diseases 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000013480 data collection Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- 238000000054 nanosphere lithography Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- -1 polysiloxane Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- Luminescent Compositions (AREA)
Abstract
Description
一典型發光二極體(LED)經歷發射之基於源或角變色之非均勻性。在此等LED中,色彩通常在一給定LED內變化,最顯著地依據來自舉例而言一作用層(其為LED之半導體結構之部分)之發射光之角度而變化。此角變色(CoA)效應可導致一般非均勻性且亦可導致更顯著視覺現象,諸如一白色LED之遠場中之大角處的「黃環」。A typical light emitting diode (LED) experiences source-based or angular-variation non-uniformity of emission. In such LEDs, the color typically varies within a given LED, most notably depending on the angle of emitted light from, for example, an active layer (which is part of the LED's semiconductor structure). This goniochromic (CoA) effect can lead to general non-uniformity and can also lead to more pronounced visual phenomena, such as a "yellow ring" at large corners in the far field of a white LED.
亦可由於由一作用層發射之光與一波長轉換層之有限相互作用而發生基於CoA之非均勻性。可由於按處於或接近法線之一角度透過波長轉換發射之光而發生此有限相互作用,使得光發射與波長轉換層內之最少數目個粒子相互作用。CoA-based inhomogeneities can also occur due to limited interaction of light emitted by an active layer with a wavelength converting layer. This limited interaction may occur due to light transmitted through the wavelength-converted emission at an angle at or near the normal such that the light emission interacts with a minimum number of particles within the wavelength-converting layer.
揭示一種奈米結構層。該奈米結構層包含一奈米結構材料陣列,該奈米結構材料陣列經組態以按一第一入射角接收一第一光束且相對於法線按大於該第一角之一第二角發射該第一光束,該奈米結構材料各具有小於1000 nm之一最大尺寸。A nanostructured layer is revealed. The nanostructured layer comprises an array of nanostructured material configured to receive a first light beam at a first angle of incidence and at a second angle relative to normal greater than the first angle The first light beam is emitted, the nanostructured materials each having a largest dimension less than 1000 nm.
相關申請案之交叉參考Cross References to Related Applications
本申請案主張2019年2月13日申請之歐洲專利申請案19156833.6及2018年12月21日申請之美國專利申請案16/230,811之優先權利,該等案各者之全文以引用的方式併入本文中。This application claims priority to European Patent Application 19156833.6, filed February 13, 2019, and U.S. Patent Application 16/230,811, filed December 21, 2018, each of which is incorporated by reference in its entirety In this article.
下文將參考隨附圖式更充分地描述不同光照明系統及/或發光二極體實施方案之實例。此等實例並不互斥,且在一個實例中發現之特徵可與在一或多個其他實例中發現之特徵組合以達成額外實施方案。因此,將瞭解,在隨附圖式中展示之實例僅經提供用於闡釋性目的且其等不意欲以任何方式限制本發明。通篇,相同元件符號指代相同元件。Examples of various light illumination system and/or light emitting diode implementations are described more fully hereinafter with reference to the accompanying drawings. These examples are not mutually exclusive, and features found in one example can be combined with features found in one or more other examples to arrive at additional implementations. Accordingly, it will be appreciated that the examples shown in the accompanying drawings are provided for illustrative purposes only and that they are not intended to limit the invention in any way. Throughout, like reference numerals refer to like elements.
將瞭解,儘管本文中可使用術語第一、第二、第三等來描述各種元件,然此等元件不應受此等術語限制。此等術語可用來區分一個元件與另一元件。舉例而言,在不脫離本發明之範疇之情況下,一第一元件可被稱為一第二元件且一第二元件可被稱為一第一元件。如本文中使用,術語「及/或」可包含相關聯列出項目之一或多者之任何及全部組合。It will be understood that although the terms first, second, third etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. For example, a first element could be termed a second element and a second element could be termed a first element without departing from the scope of the present invention. As used herein, the term "and/or" may include any and all combinations of one or more of the associated listed items.
將瞭解,當諸如一層、區或基板之一元件被稱為「在」另一元件「上」或延伸「至」另一元件「上」時,其可直接在該另一元件上或直接延伸至該另一元件上,或亦可存在中介元件。相比之下,當一元件被稱為「直接在」另一元件「上」或「直接」延伸至另一元件「上」時,可能不存在中介元件。亦將瞭解,當一元件被稱為「連接」或「耦合」至另一元件時,其可直接連接或耦合至該另一元件及/或經由一或多個中介元件連接或耦合至該另一元件。相比之下,當一元件被稱為「直接連接」或「直接耦合」至另一元件時,該元件與該另一元件之間不存在中介元件。將瞭解,此等術語意欲涵蓋元件之除圖中描繪之任何定向以外之不同定向。It will be understood that when an element such as a layer, region or substrate is referred to as being "on" or extending "on" another element, it can be directly on or extend directly on the other element. To this other element, or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or extending "directly onto" another element, there may be no intervening elements present. It will also be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element and/or connected or coupled to the other element via one or more intervening elements. a component. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present between the element and the other element. It will be understood that these terms are intended to encompass different orientations of elements in addition to any orientation depicted in the figures.
本文中可使用諸如「在…下方」、「在…上方」、「上」、「下」、「水平」或「垂直」之相對術語來描述如圖中繪示之一個元件、層或區與另一元件、層或區之一關係。將瞭解,此等術語意欲涵蓋裝置之除圖中描繪之定向以外之不同定向。Relative terms such as "below," "above," "on," "below," "horizontal" or "vertical" may be used herein to describe an element, layer or region as shown in the figures and A relationship to another element, layer, or region. It will be understood that these terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures.
半導體發光裝置或光學功率發射裝置(諸如發射紫外(UV)或紅外(IR)光學功率之裝置)躋身當前可用之最有效光源(下文「LED」)。此等LED可包含發光二極體、諧振腔發光二極體、垂直腔雷射二極體、邊緣發射雷射或類似者。歸因於其等緊湊大小及較低功率要求,舉例而言,LED可為許多不同應用之有吸引力的候選者。舉例而言,其等可用作手持式電池供電裝置(諸如相機及行動電話)之光源(例如,閃光燈及相機閃光燈)。其等亦可用於舉例而言汽車照明、抬頭顯示器(HUD)照明、園藝照明、街道照明、用於視訊之手電筒、普通照明(例如,家庭、商店、辦公室及工作室照明、劇院/舞台照明及建築照明)、擴增實境(AR)照明、虛擬實境(VR)照明、作為顯示器之背光及IR光譜。一單個LED可提供不如一白熾光源明亮之光,且因此多接面裝置或LED陣列(諸如單片LED陣列、微型LED陣列等)可用於其中期望或需要更大亮度之應用。Semiconductor light emitting devices or optical power emitting devices, such as devices that emit ultraviolet (UV) or infrared (IR) optical power, are among the most efficient light sources (hereinafter "LEDs") currently available. These LEDs may comprise light emitting diodes, resonant cavity light emitting diodes, vertical cavity laser diodes, edge emitting lasers, or the like. Due to their compact size and lower power requirements, LEDs, for example, can be attractive candidates for many different applications. For example, they can be used as light sources (eg, flashlights and camera flashes) for hand-held battery-operated devices such as cameras and mobile phones. They can also be used, for example, in automotive lighting, head-up display (HUD) lighting, horticultural lighting, street lighting, flashlights for video, general lighting such as home, store, office and studio lighting, theater/stage lighting and architectural lighting), augmented reality (AR) lighting, virtual reality (VR) lighting, backlighting as a display, and IR spectrum. A single LED may provide less bright light than an incandescent light source, and thus multi-junction devices or arrays of LEDs (such as monolithic LED arrays, miniature LED arrays, etc.) may be used in applications where greater brightness is desired or required.
揭示包含一或多個波長轉換層之LED中之色彩均勻性之改良。將瞭解,儘管本文中使用白色LED、藍色泵浦光及磷光體粒子,然其等僅用作實例。值得注意的係,與白色LED有關之揭示內容可應用於一或多個其他色譜之LED。與藍色泵浦光有關之揭示內容可與在一或多個其他波長下發射之光有關。與磷光體粒子有關之揭示內容可應用於一般而言可提供波長轉換性質之一或多個其他粒子類型、層或材料。Improvements in color uniformity in LEDs comprising one or more wavelength converting layers are disclosed. It will be appreciated that although white LEDs, blue pump light and phosphor particles are used herein, these are used as examples only. It should be noted that a disclosure related to white LEDs can be applied to LEDs of one or more other color spectrums. Disclosures relating to blue pump light may relate to light emitted at one or more other wavelengths. Disclosures related to phosphor particles may be applied to other particle types, layers or materials that may provide one or more wavelength converting properties in general.
通常,在白色LED應用中,由一作用半導體層提供泵浦光(例如,藍色泵浦)且使用該泵浦光來激發一波長轉換層中之粒子,該波長轉換層可為含有色彩轉換器之一材料,諸如磷光體。可基於來自未轉換殘餘藍色泵浦及經轉換磷光體光之貢獻來達成此一LED中之白色光譜。作為一實例,由一作用層發射之藍色泵浦光之一部分可橫穿一波長轉換器且可不與任何波長轉換粒子發生碰撞使得其未更改地穿過波長轉換器。由作用層發射之藍色泵浦光之一不同部分可橫穿波長轉換器且可與一或多個波長轉換粒子(例如,磷光體粒子)發生碰撞,使得來自(若干)碰撞之所得光係一波長轉換光且可為比與一或多個波長轉換粒子碰撞之藍色泵浦光更黃的光。組合之藍色泵浦光及經轉換黃光可導致LED之白光輸出。Typically, in white LED applications, pump light (e.g., blue pump) is provided by an active semiconductor layer and used to excite particles in a wavelength converting layer, which may contain color converting One of the materials of the device, such as phosphor. The white spectrum in such an LED can be achieved based on contributions from unconverted residual blue pump and converted phosphor light. As an example, a portion of the blue pump light emitted by an active layer may traverse a wavelength converter and may not collide with any wavelength converting particles such that it passes through the wavelength converter unchanged. A different portion of the blue pump light emitted by the active layer may traverse the wavelength converter and may collide with one or more wavelength converting particles (e.g., phosphor particles), such that the resulting light from the collision(s) is A wavelength-converted light and can be more yellow than the blue pump light that collides with the one or more wavelength-converting particles. The combined blue pump light and converted yellow light can result in the white light output of the LED.
在上文提供之實例中,轉換光之光譜可取決於應用而變化且可為窄頻或寬頻。類似地,在一些情況中,藍光可選取為完全轉換以在由一LED輸出之光中達成某些色彩。波長轉換層可大致分類為粉末狀磷光體,其由堆積至聚矽氧膜中之微米大小轉換器粒子或摻雜至陶瓷材料之一平板中之轉換器組成。兩個類型之磷光體之光散射性質隨粉末狀磷光體固有地為一體積散射介質而變化,而陶瓷磷光體可包含表面及體積散射以促進光吸收及轉換。In the examples provided above, the spectrum of the converted light can vary depending on the application and can be narrowband or broadband. Similarly, in some cases blue light may be chosen to be fully converted to achieve certain colors in the light output by an LED. Wavelength converting layers can be broadly classified as powdered phosphors consisting of micron-sized converter particles packed into a polysiloxane film or converters doped into a flat plate of ceramic material. The light scattering properties of both types of phosphors vary with powdered phosphors being inherently volumetric scattering media, whereas ceramic phosphors can include surface and volumetric scattering to facilitate light absorption and conversion.
一波長轉換層內之散射可指示在波長轉換層內橫越並吸收之光之路徑長度且可導致磷光體材料內之藍色泵浦光之過度轉換或轉換不足。作為一實例,一波長轉換層內之大量散射可對應於一較高路徑長度,從而導致與波長轉換層內之波長轉換粒子之更多碰撞(或潛在碰撞)。歸因於特定於各類型之波長轉換層之散射及轉換性質且亦歸因於選取之LED封裝之架構,可在近場或遠場中經歷源變色問題。源變色之特徵在於一波長轉換材料之發光表面上缺乏色彩均勻性(不同成分之相對光譜分佈)。源變色在使用投射光學元件投射至遠場中時導致在不同角度內具有色彩非均勻性之遠場光斑。源變色通常被稱為角變色,該兩者通常屬於相同現象。色彩非均勻性可導致非所要光學效應且導致次佳LED效能。Scattering within a wavelength converting layer can dictate the path length of light traversed and absorbed within the wavelength converting layer and can lead to overconversion or underconversion of blue pump light within the phosphor material. As an example, a large amount of scattering within a wavelength converting layer may correspond to a higher path length, resulting in more collisions (or potential collisions) with wavelength converting particles within the wavelength converting layer. Due to the scattering and conversion properties of the wavelength converting layer specific to each type and also due to the architecture of the chosen LED package, source discoloration problems can be experienced in either the near field or the far field. Source color change is characterized by a lack of color uniformity (relative spectral distribution of the different components) across the light-emitting surface of a wavelength converting material. Source discoloration when projected into the far field using projection optics results in far field spots with color non-uniformity at different angles. Primordial discoloration is often referred to as goniochromism, which are often the same phenomenon. Color non-uniformity can lead to unwanted optical effects and to sub-optimal LED performance.
本文中揭示之標的係關於藉由使用由奈米結構材料(諸如超表面或超材料(例如,惠更斯超表面)、光子晶體及/或亞波長散射器)製成之光子奈米結構層而改良一波長轉換層之表面上之色彩混合及色彩均勻性的技術及材料。The subject matter disclosed herein is concerned with photonic nanostructured layers made of nanostructured materials, such as metasurfaces or metamaterials (e.g., Huygens metasurfaces), photonic crystals, and/or subwavelength scatterers. Techniques and materials for improving color mixing and color uniformity on the surface of a wavelength converting layer.
可用奈米結構材料(諸如超分子(例如,產生超表面之超分子)、光子晶體、亞波長散射器等)來實施一奈米結構層。如本文中使用,光子晶體、亞波長散射器及超表面可為對稱或非對稱超分子及/或奈米天線之週期性配置。一超分子奈米結構層可包含一超分子陣列。一奈米天線奈米結構層可包含一或多個奈米天線。如本文中揭示,奈米結構層可併入具有放置於一LED表面(例如,一藍寶石基板)上之奈米級光學天線之LED裝置之設計。A nanostructured layer can be implemented with nanostructured materials such as supramolecules (eg, to create metasurfaces), photonic crystals, subwavelength scatterers, etc. As used herein, photonic crystals, subwavelength scatterers, and metasurfaces may be periodic configurations of symmetric or asymmetric supramolecules and/or nanoantennas. A supramolecular nanostructure layer may comprise a supramolecular array. A nanoantenna nanostructure layer may contain one or more nanoantennas. As disclosed herein, nanostructured layers can be incorporated into the design of LED devices with nanoscale optical antennas placed on an LED surface (eg, a sapphire substrate).
一奈米結構層中之光子晶體、亞波長散射器及/或超表面可為:純電漿,其由金屬奈米粒子構成;或金屬介電質,其由金屬及介電奈米粒子構成;或純介電質,其由介電奈米粒子、通常高折射率介電質構成。可使用自上而下或自下而上製造方法來製造一奈米結構層中之光子晶體及/或超表面且其等可利用奈米粒子自組裝來提供製造及可擴展性之優點。可針對一維、二維或三維製造光子晶體。一維光子晶體可由沈積或粘附在一起之層組成。可藉由光微影或藉由在一適合基板中鑽孔而製成二維光子晶體。三維光子晶體之製造方法包含在不同角下鑽孔、將多個2D層彼此疊置、直接雷射寫入、或舉例而言促使將球體自組裝於一矩陣中並溶解球體。奈米結構層中之光子晶體及/或超表面內之超分子可藉由包含但不限於分子連接子、DNA及類似者之不同技術固持在一起。替代地,其等可藉由自上而下製造技術(諸如奈米壓印微影、奈米球微影或類似者)及使用剝離技術釋放之個別超分子來製造。可藉由諸如二氧化矽或二氧化鋁之介電質囊封一奈米結構層以防止超分子性質隨時間之降級。Photonic crystals, subwavelength diffusers and/or metasurfaces in a nanostructured layer can be: pure plasmonics, consisting of metallic nanoparticles; or metallodielectrics, consisting of metallic and dielectric nanoparticles ; or pure dielectrics, which consist of dielectric nanoparticles, usually high refractive index dielectrics. Photonic crystals and/or metasurfaces in a nanostructured layer can be fabricated using top-down or bottom-up fabrication methods and they can take advantage of nanoparticle self-assembly to provide fabrication and scalability advantages. Photonic crystals can be fabricated for one, two or three dimensions. One-dimensional photonic crystals can consist of layers deposited or adhered together. Two-dimensional photonic crystals can be fabricated by photolithography or by drilling holes in a suitable substrate. Fabrication methods for 3D photonic crystals include drilling holes at different angles, stacking multiple 2D layers on top of each other, direct laser writing, or, for example, forcing the self-assembly of spheres in a matrix and dissolving the spheres. The photonic crystals in the nanostructure layer and/or the supramolecules in the metasurface can be held together by different techniques including but not limited to molecular linkers, DNA and the like. Alternatively, they can be fabricated by top-down fabrication techniques such as nanoimprint lithography, nanosphere lithography, or similar, with individual supramolecules released using exfoliation techniques. Degradation of supramolecular properties over time can be prevented by encapsulating a nanostructured layer with a dielectric such as silicon dioxide or aluminum dioxide.
揭示用於使用一奈米結構層使LED中之光轉向的設計及最佳化。藉由實例且為提供具體描述,描述具有一藍寶石基板之晶片級封裝(CSP) LED之一覆晶,而本文中之原理及教示可應用於任何適用LED設計。具有一光滑光逸出表面(LES)之一基於藍寶石之CSP發射器可允許沈積一奈米結構層使得由LED之一作用層發射之光經由藍寶石基板入射於奈米結構層上。Design and optimization for light steering in LEDs using a nanostructured layer are disclosed. By way of example and to provide specific description, a flip-chip of a chip-scale package (CSP) LED with a sapphire substrate is described, but the principles and teachings herein can be applied to any applicable LED design. A sapphire-based CSP emitter with a smooth light-exit surface (LES) allows the deposition of a nanostructured layer such that light emitted by an active layer of the LED is incident on the nanostructured layer via the sapphire substrate.
根據本文中揭示之標的,一奈米結構層可藉由憑藉使入射光相對於法線轉向一較高角度(例如,從小於10度至大於90度)來增大入射於奈米結構層上之一光束之入射角而增大色彩均勻性。替代地或另外,奈米結構層可藉由允許大於一截止角之光穿過奈米結構層而增大色彩均勻性,使得僅按更可能增加光路徑長度之角度入射於奈米結構層上之光穿過奈米結構層。In accordance with the objectives disclosed herein, a nanostructured layer can be increased by incident light on the nanostructured layer by deflecting it at a higher angle (e.g., from less than 10 degrees to greater than 90 degrees) relative to the normal. The incident angle of one of the beams increases the color uniformity. Alternatively or additionally, the nanostructured layer can increase color uniformity by allowing light greater than a cut-off angle to pass through the nanostructured layer so that it is only incident on the nanostructured layer at angles that are more likely to increase the path length of light The light passes through the nanostructure layer.
圖1A繪示一LED裝置100,其包含在包含一磊晶生長半導體層130及基板120之一LED裝置上之一奈米結構層110。磊晶生長半導體層130可包含藉由一間隙133分離的一第一接觸件137及一第二接觸件138,間隙133可為一氣隙或可填充有介電材料。一p型層134可接近一作用層135及一n型層139。作用層135可經組態以發射遠離接觸件137及138之光使得從作用層135發射之光束大體上朝向基板120發射。為易於理解本發明,以一簡化形式呈現LED裝置100,已知相關技術之一般技術者將理解包含於一LED內之其他元件。FIG. 1A illustrates an
磊晶生長半導體層130可由經組態以在被激發時發射光子之任何適用材料形成,包含藍寶石、SiC、GaN、聚矽氧,且更明確言之可由以下各者形成:一Ⅲ-Ⅴ族半導體,包含但不限於AlN、AlP、AlAs、AlSb、GaN、GaP、GaAs、GaSb、InN、InP、InAs、InSb;Ⅱ-Ⅵ族半導體,包含但不限於ZnS、ZnSe、CdSe、CdTe;Ⅳ族半導體,包含但不限於Ge、Si、SiC;及其等之混合物或合金。此等例示性材料在其中存在其等之LED的典型發射波長下可具有在自約2.4至約4.1之範圍內的折射率。The epitaxially grown
舉例而言,可使用氮化鋁(AlN)且其係一寬帶隙(在室溫下為6.01 eV至6.05 eV)材料。AlN可具有約1.9至2.2 (例如,在632.8 nm下為2.165)之折射率。諸如GaN之Ⅲ族氮化物半導體在500 nm下可具有約2.4之折射率,且諸如InGaP之Ⅲ族磷化物半導體在600 nm下可具有約3.7之折射率。一例示性氮化鎵(GaN)層可採取一pGaN層之形式。如相關技術之一般技術者將理解,GaN係常用於發光二極體中之一二元III/V直接帶隙半導體。GaN可具有具3.4 eV之一寬帶隙之一晶體結構,此使材料對於光電子、高功率及高頻率裝置中之應用而言為理想的。GaN可摻雜有矽(Si)或氧以產生一n型GaN且摻雜有鎂(Mg)以產生如本發明實例中使用之一p型GaN。作用層135係其中在發生電致發光時發射光的區。耦合至LED裝置100之接觸件137及/或138可由諸如AuSn、AuGa、AuSi或SAC焊料之一焊料形成。For example, aluminum nitride (AlN) can be used and is a wide bandgap (6.01 eV to 6.05 eV at room temperature) material. AlN may have a refractive index of about 1.9 to 2.2 (eg, 2.165 at 632.8 nm). A Group III nitride semiconductor such as GaN may have a refractive index of about 2.4 at 500 nm, and a Group III phosphide semiconductor such as InGaP may have a refractive index of about 3.7 at 600 nm. An exemplary gallium nitride (GaN) layer can take the form of a pGaN layer. As one of ordinary skill in the related art will understand, GaN is one of the binary III/V direct bandgap semiconductors commonly used in light emitting diodes. GaN can have a crystal structure with a wide bandgap of 3.4 eV, which makes the material ideal for applications in optoelectronics, high power and high frequency devices. GaN can be doped with silicon (Si) or oxygen to produce an n-type GaN and with magnesium (Mg) to produce a p-type GaN as used in the examples of the present invention. The
如圖1A中展示,基板120可定位於半導體層130與奈米結構層110之間。基板可為具有實現奈米結構層110之沈積之一光滑LES之一CSP發射器。基板120可包括藍寶石(其係亦稱為剛玉之氧化鋁(Al2
O3
)),且可展現包含非常堅硬、牢固、易於機器加工、一良好電絕緣體及一極佳熱導體的性質。藍寶石在合成產生時通常為透明的,其中自然出現藍寶石中之藍色(及另一形式之剛玉之紅寶石中之紅色)來自晶格中之雜質。在其他LED中,可用氮化鎵(GaN)替換藍寶石。半導體層130可在發生電致發光時發射光的區中。As shown in FIG. 1A ,
如圖1A中展示,基板120之側壁可由側壁材料140覆蓋。側壁材料140亦可覆蓋半導體層130之一或多個層,使得相同側壁材料140覆蓋基板120及半導體層130或與半導體層130不同之一材料可覆蓋基板120之側壁。側壁材料140可為任何適用反射或散射材料。根據一實施例,側壁材料140可為一分佈式布拉格(Bragg)反射器(DBR)。As shown in FIG. 1A , the sidewalls of the
奈米結構層110可包含併入至可包含超分子及/或奈米天線之光子晶體及/或超表面中的光子材料,使得一超分子或奈米天線之最大尺寸小於1000 nm。奈米天線可經實施為定位於奈米結構層中之一奈米粒子陣列,如本文中進一步揭示。奈米天線可經配置成週期性或非週期性圖案,如本文中進一步揭示。類似於由原子構成之化學分子,一超表面由超分子構成,其中超分子組合在一起且相互作用以給出超表面獨特光學性質。個別超表面之大小可為亞波長或可按相同使用波長順序形成。The
奈米結構層110亦可包含分佈於整個一主體介電介質中的奈米天線。奈米天線之大小可為波長數量級之一亞波長。The
如本文中揭示,為促進橫穿波長轉換層102之光之一較長光路徑,一奈米結構層110可產生一角濾光片,該角濾光片按大於一角截止角之角度透射光且相對於法線反射角截止角以下之輻射。因此,僅按一高角(例如,非法向或接近法向)入射於奈米結構層110上之光束橫穿奈米結構層110。鑑於高角,此等光束之光路徑比舉例而言將以其他方式按一較低(例如,在法向或接近法向)角入射於波長轉換層102上之光束更長。As disclosed herein, to facilitate a longer optical path for light traversing the
如本文中揭示,入射於圖1A之一奈米結構層110上之光束可反射回至基板120中,使得反射光束入射於側壁材料140及/或定位於作用層135下方且遠離基板120之面向奈米結構層110之表面的一背反射器125上。背反射器125可為包含平坦金屬鏡、一分佈式布拉格反射器(DBR)及/或其他已知LED反射器的一電漿層。背反射器125經設計以重新反射被反射回至基板120中之光束。背反射器125可在光束從側壁材料140彈回之前或之後反射光束或可反射由奈米結構層110直接反射之光束。As disclosed herein, a beam of light incident on
圖1B展示經由一奈米結構層之光轉向之一實例。LED裝置111A經展示具有一基板120A及波長轉換層102A。光束112A及113A橫穿基板120A且分別按角Θ1A
及Θ2A
入射於波長轉換層102A上。根據所揭示之標的,LED裝置111B經展示具有一基板120B、波長轉換層102B、以及一奈米結構層110B。光束112B及113B以與光束112A及113A在橫穿類似於基板120B或與基板120B相同之基板120A時相同之光學性質(例如,角、頻率、方向)橫穿基板120B。光束112B及113B在橫穿奈米結構層110B之後入射於波長轉換層102B上。如展示,光束112B及113B在奈米結構層110B內轉向,使得其等分別按角Θ1B
及Θ2B
入射於波長轉換層102B上。將注意,相對於法線,角Θ1B
及Θ2B
大於角Θ1 A
及Θ2 A
。為清楚起見,奈米結構層110B使入射於奈米結構層110B上之光束轉向,使得按大於奈米結構層110B未使光束轉向(即,波長轉換層102A之實例)的一角度進入波長轉換層102B。因此,透過波長轉換層102B發射之光之路徑長度大於透過波長轉換層102A發射之光之路徑長度,且因此,光束112B及113B更可能與波長轉換層102B內之粒子發生碰撞,從而有效地增加轉換機會,提供色彩均勻性。Figure 1B shows an example of light redirection through a nanostructured layer.
根據一實施例,如本文中揭示,圖1A之奈米結構層110可按小於一截止角之一角度反射入射於奈米結構層110上之光束。在圖1C中藉由光束122及123展示此現象之一例示性視覺表示。光束122及123可橫穿基板120且入射於奈米結構層121上。奈米結構層121可經組態使得按低於一給定截止角之一角度入射之光束反射回且高於截止角之光束透射穿過奈米結構層(例如,進入一波長轉換層中)。光束122可按可為低於一截止角(即,較接近法線)之角度的一入射角Θ3
入射使得奈米結構層反射光束122,如展示。光束123可按高於截止角(即,進一步遠離法線)之一入射角Θ4
入射於奈米結構層121上且可橫穿奈米結構層121,如展示。根據所揭示之標的,光束123可在奈米結構層121內經歷光轉向。如本文中揭示,反射回至基板120中之光束可在基板內及/或在一背反射器上經歷一或多次彈回,使得其等可在藉由奈米結構層121反射至基板120中之後第二次入射於奈米結構層121上。在一第一時間藉由奈米結構層121反射至基板中之一光束可在基板內(例如,在側壁材料、背反射器等處)經歷一或多次彈回且可在第一時間之後之一第二時間入射於奈米結構層121上。在第二時間之光束之入射角可高於截止角,且因此,光束可穿過奈米結構層121。According to one embodiment, as disclosed herein, the
圖1D展示來自如針對圖1C描述之與奈米結構層121之例示性光束相互作用之一奈米結構層之φ平均透射127相對於角圖。如展示,奈米結構層121之組態在近似45度之截止角之後實現一或接近一透射且在截止角之前不允許透射(例如,反射光束)。FIG. 1D shows a plot of φ
圖1E展示穿過圖1A之基板120及奈米結構層110之一光束透射之一例示性製程1400 (注意,此製程亦可應用於圖1C及圖1D之奈米結構層121)。在步驟1410,一第一光束可在橫穿基板120之後入射於奈米結構層110上。第一光束可按低於奈米結構層110之截止角之一角度入射。在步驟1420,第一光束可基於與奈米結構層110之相互作用按低於截止角之一角度反射回至基板120中。在步驟1430,一第二光束可透過基板120入射於奈米結構層110上。第二光束可按高於奈米結構層110之截止角之一角度入射。在步驟1440,第二光束可基於其與奈米結構層110之相互作用按高於截止角之一角度透過奈米結構層110發射。根據一實施例,如本文中論述,第一光束可從基板、側壁材料及/或背反射器之一或多個內部表面彈回且接著可按高於截止角之一角度入射於奈米結構層110上。接著,可基於高於截止角之入射角透過奈米結構層110發射第一光束。FIG. 1E shows an
本文中將進一步論述奈米結構層組態。The nanostructured layer configuration will be discussed further in this paper.
圖1F至圖1H展示根據本文中之標的之奈米結構層110C、110D及110E之不同組態。圖1F展示一基板131、一黏著劑層136、及一波長轉換層132。一奈米結構層110C經安置於波長轉換層132內波長轉換層132之一第一表面與一第二表面之間,使得第一表面及第二表面相對於基板131為平坦的。圖1G展示一基板131、一黏著劑層136、及一波長轉換層132。一奈米結構層110D經安置於波長轉換層132之一表面上,該表面接近基板131。圖1G展示一基板131、一黏著劑層136、及一波長轉換層132。一奈米結構層110E經安置於基板131與波長轉換層132之間使得其經安置於黏著劑層136內。1F-1H show different configurations of nanostructure layers 110C, 110D, and 110E in accordance with the subject matter herein. FIG. 1F shows a
如本文中揭示,光子奈米結構層經結構化使得其在將光之角朝向一選取方向彎曲(例如,至比入射角更大之一角度)之後透射入射於一波長轉換層上之輻射。舉例而言,對於具有陶瓷磷光體之一應用,法向入射於一奈米結構層上之光可相對於法線彎曲至磷光體層內之較大偏轉角。此導致此光之光路徑長度增加,從而導致增加轉換及色彩混合及色彩均勻性之改良。奈米結構層之偏轉角及奈米結構層內之奈米結構之分佈可經選取以最佳化色彩混合及色彩均勻性,如本文中揭示。As disclosed herein, the photonic nanostructure layer is structured such that it transmits radiation incident on a wavelength conversion layer after bending the angle of light toward a selected direction (eg, to an angle greater than the angle of incidence). For example, for an application with ceramic phosphors, light normally incident on a nanostructured layer can be bent relative to the normal to large deflection angles within the phosphor layer. This results in an increase in the optical path length of this light, resulting in increased conversion and color mixing and improvements in color uniformity. The deflection angle of the nanostructured layer and the distribution of nanostructures within the nanostructured layer can be selected to optimize color mixing and color uniformity, as disclosed herein.
根據一惠更斯超表面組態之一奈米結構層可包含配置成六邊形或矩形晶格之奈米圓柱體、奈米錐或奈米立方體。晶格週期可為亞波長或大於波長。此等奈米結構可經選取以滿足第一科克條件,使得磁及電偶極輻射沿向後方向抵消,從而產生一大的正向散射。對於包含一垂直二聚體及/或同軸二聚體之奈米天線,可在各自超分子內提供干涉模式,其使用結構參數來提供對散射模式之更佳控制。A nanostructured layer according to a Huygens metasurface configuration may comprise nanocylinders, nanocones or nanocubes arranged in a hexagonal or rectangular lattice. The lattice period can be subwavelength or larger than wavelength. These nanostructures can be chosen to satisfy the first Cork condition such that the magnetic and electric dipole radiation cancel in the backward direction, resulting in a large forward scatter. For nanoantennas comprising a vertical dimer and/or coaxial dimer, interference patterns can be provided within the respective supramolecules, using structural parameters to provide better control over the scattering pattern.
圖1I繪示一些不同可能奈米天線之各個橫截面。奈米天線可由具有配置成六邊形或矩形晶格之垂直或同軸二聚體之奈米圓柱體191、奈米錐192、或奈米錐193及195形成。晶格週期可為亞波長或大於波長。奈米天線可為惠更斯超分子及/或支持波導模式。各光子晶體或超表面可呈現一定量之光束彎曲性質,使得入射光束可經塑形為所需角分佈。Figure 1I shows various cross-sections of some different possible nanoantennas. Nanoantennas may be formed from
作為一替代組態實例,圖1K展示由非對稱散射器167及172形成之亞波長光柵。非對稱散射器168包含一基板162上之具有一高度H之兩個奈米圓柱體164及166。如展示,散射器168係非對稱的使得奈米圓柱體165及166並非相同大小/形狀。散射器168陣列可產生一奈米散射層,使得陣列包含散射器168之多個複本。散射器172係一L形散射器,其中散射器172之一側大於散射器172之另一側。散射器168陣列可產生一奈米散射層,使得陣列包含散射器168及/或172之多個複本。此等亞波長散射器可將按法向入射入射之光散射至大的傾斜角。非對稱奈米結構(例如,168、172)可經選取為排列成一二維光柵。此等奈米結構之設計及放置可旨在達成最佳可能色彩混合及色彩均勻性。As an example of an alternate configuration, FIG. 1K shows a subwavelength grating formed by
此外,可以建立一給定截止角之一配置組態奈米天線,使得在截止角以上入射之光穿過奈米天線及因此奈米結構層,且在截止角以下入射之光未穿過或反射回。Furthermore, nanoantennas can be configured for a given cutoff angle by establishing a configuration such that light incident above the cutoff angle passes through the nanoantenna and thus the nanostructure layer, and light incident below the cutoff angle does not pass through or reflect back.
奈米天線可形成或排列為單奈米光子結構,使得相同奈米天線重複多次以形成一奈米結構層。替代地或另外,奈米天線可形成或排列為多奈米結構材料,使得一奈米天線陣列重複多次以形成一奈米結構層。圖1J繪示一例示性多奈米結構材料1300。如展示,多奈米結構材料1300包含奈米圓柱體1301及1302,使得不同奈米圓柱體1301及1302在相互比較時具有一或多個不同性質。作為一視覺實例,如圖1J中展示,奈米圓柱體1301之體積小於奈米圓柱體1302。此等多奈米結構可經排列使得一奈米結構層110包含多奈米結構材料1300之多個反覆。一奈米結構層110之各小多奈米結構材料1300可向入射於奈米結構層110上之光提供光束彎曲。藉由將具有不同光束彎曲性質之大量不同奈米圓柱體1301適當地放置於奈米結構層110內之一多奈米結構材料1300內,入射於奈米結構層110上之光可經塑形以呈現一定量之光束彎曲性質或獲取一預定或較佳角分佈。可由一優化器選擇圖1A之奈米結構層110內之設計及放置以從圖1A之LED裝置100獲取最佳可能通量。The nano-antennas can be formed or arranged as a single nano-photonic structure, so that the same nano-antenna is repeated multiple times to form a nano-structure layer. Alternatively or additionally, nanoantennas may be formed or arranged as multiple nanostructured materials such that a nanoantenna array is repeated multiple times to form a nanostructured layer. FIG. 1J depicts an exemplary multi-nanostructured material 1300 . As shown, multi-nanostructured material 1300 includes
可由所需光束彎曲或角分佈指示光子晶體及/或超表面之設計且可基於一優化器判定光子晶體及/或超表面之放置以獲取最佳可能色彩混合及色彩均勻性。The design of photonic crystals and/or metasurfaces can be dictated by the desired beam bending or angular distribution and placement of photonic crystals and/or metasurfaces can be determined based on an optimizer for best possible color mixing and color uniformity.
再次參考圖1A,側反射器140、背反射器125、或側反射器140及背反射器125可為經設計以進一步增強按所要增大(例如,傾斜)角透過奈米結構層110輸出至波長轉換層102中之定向光的非鏡面反射奈米結構層。Referring again to FIG. 1A, the
舉例而言,側反射器140及/或背反射器125可為奈米結構層,該等奈米結構層經設計使得與一鏡面反射器相比,其等增加在一所要(例如,大的)入射角範圍中直接反射至奈米結構層110或在所要入射角範圍中間接反射至奈米結構層110 (經由一或多個額外反射)之入射於其等上之光射線之分率。奈米結構層110上之所要入射角範圍可為舉例而言大於如上文描述之一截止角之入射角。此等奈米結構側反射器及背反射器可視情況彼此組合使用。For example, the
如剛剛描述之側反射器140及背反射器125可採取經設計以使角輻射轉向之一奈米結構光子層之形式。僅藉由非限制實例,此一奈米結構側或背反射器可包含非對稱散射元件(本文中亦稱為奈米天線)之一光子晶體、超材料、超表面或亞波長光柵或由其等組成。此一奈米結構側或背反射器之主要功能係將入射於其上之輻射從一給定角範圍反射至一選取角範圍。此受限角範圍可經選取以按所要入射角將儘可能多的光從LED之後表面或側引導朝向奈米結構層110。
此一奈米結構背或側反射器可包括形成為或排列為單元胞的散射元件。各單元胞可向入射於側反射器上之光提供光束彎曲。藉由適當地配置具有不同光束彎曲性質之大量不同單元胞,光可經塑形為所需角分佈。Such a nanostructured back or side reflector may include scattering elements formed or arranged as unit cells. Each unit cell can provide beam bending for light incident on the side reflectors. By properly arranging a large number of different unit cells with different beam bending properties, light can be shaped into a desired angular distribution.
在此一奈米結構側或背反射器中,反射光束彎曲器(單元胞)可舉例而言配置成一週期性二維圖案或光柵,且可由囊封或以其他方式含有一或多個散射元件之背景材料形成且定位成鄰近基板120。複數個散射元件可被背景材料包圍。一鏡面反射器可鄰近基板120遠端之背景材料。可舉例而言藉由使用經設計以將來自鏡面反射器之反射場連結至來自散射元件之散射場之非對稱散射元件而達成非對稱散射。此等場之間之干涉導致光沿一特定方向散射。散射元件之配置可產生相位之一空間梯度。In such a nanostructure side or back reflector, the reflective beam benders (unit cells) can be configured, for example, as a periodic two-dimensional pattern or grating, and can be encapsulated or otherwise contain one or more scattering elements A background material is formed and positioned adjacent to the
一奈米結構側反射器中之光束彎曲器之一週期性陣列之一單元胞在尺寸上可為矩形且包含一系列層,包含一鏡面反射器、一或多個散射元件及如上文描述之背景材料。週期性可以一使用中波長為中心,諸如(舉例而言)由LED發射之峰值波長(例如,450 nm)。在單元胞中,一或多個散射元件可經定位成鄰近鏡面反射器遠端之基板層120及/或一或多個散射元件可與鏡面反射器接觸或接近接觸。A unit cell of a periodic array of beam benders in a nanostructured side reflector may be rectangular in size and comprise a series of layers comprising a specular reflector, one or more scattering elements and as described above background material. The periodicity may be centered on an in-use wavelength such as, for example, the peak wavelength emitted by an LED (eg, 450 nm). In the unit cell, one or more scattering elements may be positioned adjacent to the
散射元件可具有任何適合高度及寬度且可舉例而言由矽(Si)或氧化鈦(TiO2 )或其等之一組合形成。背景材料可為一低折射率材料,諸如(舉例而言)氟化鎂(MgF2 )。舉例而言,鏡面反射器(若存在)可為一金屬鏡(舉例而言,一金或銀鏡)、一介電鏡或一布拉格反射器。The scattering elements may have any suitable height and width and may, for example, be formed of silicon (Si) or titanium oxide (TiO 2 ), or a combination thereof. The background material can be a low index material such as, for example, magnesium fluoride ( MgF2 ). For example, the specular reflector, if present, can be a metallic mirror (eg, a gold or silver mirror), a dielectric mirror, or a Bragg reflector.
散射元件可採取本文中描述之散射元件之任一者之形式。舉例而言,一散射元件可包括一單一光散射器(一單一偶極)、或可類似於一八木天線組態之一光散射器(偶極)陣列。The scattering element may take the form of any of the scattering elements described herein. For example, a scattering element may include a single light scatterer (a single dipole), or an array of light scatterers (dipoles) that may be configured similarly to a Yagi antenna.
一散射元件可經設計為兩個干涉惠更斯超原子。散射元件可經選擇以滿足第一科克條件,使得磁及電偶極輻射沿向後方向抵消,從而產生一大的正向散射,此稱為惠更斯超原子。一散射元件可形成為一二維散射器(諸如(舉例而言)一光柵)或一三維散射。一例示性三維散射可為一奈米圓柱體。亦可採用其他幾何散射器,包含舉例而言L形散射器。A scattering element can be designed as two interfering Huygens superatoms. Scattering elements can be chosen to satisfy the first Cork condition such that the magnetic and electric dipole radiation cancel in the backward direction, resulting in a large forward scattering, known as a Huygens superatom. A scattering element may be formed as a two-dimensional diffuser, such as, for example, a grating, or as a three-dimensional diffuser. An exemplary three-dimensional scattering can be a nano-cylinder. Other geometric diffusers may also be employed, including, for example, L-shaped diffusers.
散射元件可舉例而言由舉例而言配置成一六邊形或一矩形晶格之奈米圓柱體、奈米錐或奈米立方體形成。晶格週期可為亞波長或大於波長。在一奈米圓柱體垂直二聚體及同軸二聚體之情況中,超原子或奈米天線內之干涉模式使用結構參數來提供對散射模式之額外控制。Scattering elements may for example be formed by nanocylinders, nanocones or nanocubes, for example arranged in a hexagonal or a rectangular lattice. The lattice period can be subwavelength or larger than wavelength. Interferometric patterns within metaatoms or nanoantennas use structural parameters to provide additional control over the scattering patterns in the case of a nanocylindrical vertical dimer and coaxial dimer.
散射元件亦可由光子超材料(PM) (亦稱為一光學超材料,其係與光相互作用、覆蓋太赫茲(THz)、紅外(IR)或可見波長之一類型之電磁超材料)形成。材料採用一週期性蜂巢式結構。亞波長週期性區分光子超材料與光子帶隙或光子晶體結構。胞在大於原子而遠小於輻射波長之量值之尺度上,且為奈米數量級。在超材料中,胞在大於胞之尺度上均勻之一材料中發揮原子之作用,從而產生一有效介質模型。Scattering elements may also be formed from photonic metamaterials (PM) (also known as an optical metamaterial, which is a type of electromagnetic metamaterial that interacts with light and covers one of the terahertz (THz), infrared (IR) or visible wavelengths). The material adopts a periodic honeycomb structure. Subwavelength periodicity distinguishes photonic metamaterials from photonic bandgap or photonic crystal structures. Cells are on a scale larger than atoms but much smaller than the magnitude of the wavelength of radiation, and are on the order of nanometers. In metamaterials, cells function as atoms in a material that is uniform on a scale larger than the cell, resulting in an effective medium model.
圖2A係一例示性實施例中之一LED裝置200之一圖式。LED裝置200可包含一或多個磊晶層202、一作用層204、及一基板206。在其他實施例中,一LED裝置可包含一波長轉換器層及/或初級光學器件。如圖2A中展示,作用層204可鄰近基板206且在激發時發射光。磊晶層202可接近作用層204及/或一或多個中間層可介於作用層204與磊晶層202之間。基板206可接近作用層204及/或一或多個中間層可介於作用層204與基板206之間。作用層204將光發射至基板206中。一奈米結構層可放置於基板206上,使得入射於奈米結構層上之光藉由奈米結構層彎曲或藉由奈米結構層濾波,使得僅相對於法線高於一截止角之光束透過奈米結構層發射。FIG. 2A is a diagram of an
圖2B展示包含具有像素201A、201B及201C之一LED陣列210之一照明系統220之一橫截面視圖。LED陣列210包含像素201A、201B及201C,其等各包含一各自基板206B、作用層204B及一磊晶層202B。LED陣列210中之像素201A、201B及201C可使用陣列分段或替代地使用取置技術來形成且可舉例而言發射諸如紅色、綠色及藍色之不同峰值波長之光。一或多個像素201A、201B及201C之間展示之空間203可包含一氣隙或可由諸如可為一接觸件(例如,n接觸件)之一金屬材料的一材料填充。根據一些實施例,可提供諸如一或多個透鏡及/或一或多個波導之次级光學器件。2B shows a cross-sectional view of an
LED裝置200或像素201A、201B及201C可為單波長發射器且可個別地或經由一陣列供電。LED裝置200或像素201A、201B及201C可為包含一或多個電子板、電力模組、感測器、連接能力及控制模組、LED附接區或類似者之一照明系統之部分。一陣列中之像素可基於不同通道信號供電且其等操作可由一微控制器進行判定。
圖3展示包含一應用平台560及LED系統552及556的一例示性系統550。LED系統552產生箭頭561a與561b之間展示之光束561。LED系統556可在箭頭562a與562b之間產生光束562。作為一例示性實施例,LED系統552及556可為一汽車之部分且可發射紅外(IR)光通信光束使得光束561及/或562之路徑中之一迎面駛來車輛能夠接收來自汽車之通信。在例示性實施例中,系統550可為一相機閃光燈系統之一行動電話、室內住宅或商業照明、室外燈(諸如街道照明)、一汽車、一醫療裝置、AR/VR裝置、及機器人裝置。FIG. 3 shows an exemplary system 550 including an application platform 560 and LED systems 552 and 556 . LED system 552 produces
應用平台560可經由線565或其他適用輸入經由一電源匯流排將電力提供至LED系統552及/或556,如本文中論述。此外,應用平台560可經由線565提供輸入信號用於LED系統552及LED系統556之操作,該輸入可基於一使用者輸入/偏好、一經感測讀取、一預程式化或自主判定輸出或類似者。一或多個感測器可在應用平台560之外殼之內部或外部。Application platform 560 may provide power to LED systems 552 and/or 556 via
在各項實施例中,應用平台560感測器及/或LED系統552及/或556感測器可收集資料,諸如視覺資料(例如,LIDAR資料、IR資料、經由一相機收集之資料等)、音頻資料、基於距離之資料、移動資料、環境資料、或類似者或其等之一組合。可基於藉由舉例而言LED系統552及/或556發射一光學信號(諸如一IR信號)且基於發射之光學信號收集資料而收集資料。可藉由與發射用於資料收集之光學信號之組件不同的一組件收集資料。繼續實例,感測設備可定位於一汽車上且可使用一垂直腔表面發射雷射(VCSEL)來發射一光束。一或多個感測器可感測對於發射光束或任何其他適用輸入之一回應。In various embodiments, application platform 560 sensors and/or LED system 552 and/or 556 sensors may collect data, such as visual data (e.g., LIDAR data, IR data, data collected via a camera, etc.) , audio data, distance-based data, movement data, environmental data, or the like or a combination thereof. Data may be collected based on emitting an optical signal, such as an IR signal, by, for example, LED systems 552 and/or 556 and collecting data based on the emitted optical signal. Data may be collected by a different component than the component emitting the optical signal for data collection. Continuing with the example, the sensing device may be positioned on a car and may use a vertical cavity surface emitting laser (VCSEL) to emit a beam of light. One or more sensors may sense a response to a transmitted beam or any other suitable input.
儘管上文以特定組合描述特徵及元件,然一般技術者將明白,各特徵或元件可單獨或以與或不與其他特徵及元件之任何組合使用。另外,可在併入一電腦可讀媒體中之一電腦程式、軟體或韌體中實施本文中描述之方法以由一電腦或處理器執行。電腦可讀媒體之實例包含電子信號(經由有線或無線連接傳輸)及電腦可讀儲存媒體。電腦可讀儲存媒體之實例包含但不限於一唯讀記憶體(ROM)、一隨機存取記憶體(RAM)、一暫存器、快取記憶體、半導體記憶體裝置、磁性媒體(諸如內置硬碟及可抽換式磁碟)、磁光媒體、及光學媒體(諸如CD-ROM光碟及數位多功能光碟(DVD))。Although features and elements are described above in particular combinations, one of ordinary skill will appreciate that each feature or element can be used alone or in any combination with or without other features and elements. Additionally, the methods described herein may be implemented in a computer program, software or firmware incorporated into a computer readable medium for execution by a computer or processor. Examples of computer readable media include electronic signals (transmitted over wired or wireless connections) and computer readable storage media. Examples of computer-readable storage media include, but are not limited to, a read-only memory (ROM), a random-access memory (RAM), a scratchpad, cache memory, semiconductor memory devices, magnetic media (such as built-in hard disks and removable disks), magneto-optical media, and optical media (such as CD-ROM discs and digital versatile discs (DVD)).
100:發光二極體(LED)裝置 102:波長轉換層 102A:波長轉換層 102B:波長轉換層 110:奈米結構層 110B:奈米結構層 110C:奈米結構層 110D:奈米結構層 110E:奈米結構層 111A:發光二極體(LED)裝置 111B:發光二極體(LED)裝置 112A:光束 112B:光束 113A:光束 113B:光束 120:基板 120A:基板 120B:基板 121:奈米結構層 122:光束 123:光束 125:背反射器 127:φ平均透射 130:磊晶生長半導體層 131:基板 132:波長轉換層 133:間隙 134:p型層 135:作用層 136:黏著劑層 137:第一接觸件 138:第二接觸件 139:n型層 140:側壁材料 162:基板 164:奈米圓柱體 166:奈米圓柱體 168:非對稱散射器 172:非對稱散射器 191:奈米圓柱體 192:奈米錐 193:奈米錐 195:奈米錐 200:發光二極體(LED)裝置 201A:像素 201B:像素 201C:像素 202:磊晶層 202B:磊晶層 203:空間 204:作用層 204B:作用層 206:基板 206B:基板 210:發光二極體(LED)陣列 220:照明系統 550:系統 552:發光二極體(LED)系統 556:發光二極體(LED)系統 560:應用平台 561:光束 561a:箭頭 561b:箭頭 562:光束 562a:箭頭 562b:箭頭 565:線 1301:奈米圓柱體 1302:奈米圓柱體 1400:製程 1410:步驟 1420:步驟 1430:步驟 1440:步驟100: Light Emitting Diode (LED) Devices 102: wavelength conversion layer 102A: wavelength conversion layer 102B: wavelength conversion layer 110: Nano structure layer 110B: nanostructure layer 110C: nanostructure layer 110D: nanostructure layer 110E: nanostructure layer 111A: Light Emitting Diode (LED) Devices 111B: Light Emitting Diode (LED) Devices 112A: Beam 112B: Beam 113A: Beam 113B: Beam 120: Substrate 120A: Substrate 120B: Substrate 121: Nano structure layer 122: Beam 123: Beam 125: back reflector 127: φ average transmission 130: Epitaxial growth of semiconductor layer 131: Substrate 132: wavelength conversion layer 133: Gap 134: p-type layer 135: Effect layer 136: Adhesive layer 137: first contact piece 138: Second contact piece 139: n-type layer 140: side wall material 162: Substrate 164: Nano cylinder 166: Nano cylinder 168:Asymmetric diffuser 172:Asymmetric diffuser 191: Nano cylinder 192: Nano cone 193: Nano cone 195: nano cone 200: Light Emitting Diode (LED) Devices 201A: Pixel 201B: Pixel 201C: Pixel 202: epitaxial layer 202B: epitaxial layer 203: space 204: Action layer 204B: Action layer 206: Substrate 206B: Substrate 210: Light Emitting Diode (LED) Array 220: Lighting system 550: system 552: Light Emitting Diode (LED) Systems 556: Light Emitting Diode (LED) Systems 560: Application Platform 561: Beam 561a:Arrow 561b: Arrow 562: Beam 562a:Arrow 562b:Arrow 565: line 1301: Nano cylinder 1302: Nano cylinder 1400: Process 1410: step 1420: step 1430: Step 1440: step
可從藉由實例結合隨附圖式給出之以下描述得到一更詳細理解,其中:A more detailed understanding can be gained from the following description, given by way of example in conjunction with the accompanying drawings, in which:
圖1A係具有一奈米結構層之發光裝置之一圖式;Figure 1A is a diagram of a light-emitting device with a nanostructure layer;
圖1B係展示具有及不具有一奈米結構層之光發射之一圖式;Figure 1B is a diagram showing light emission with and without a nanostructured layer;
圖1C係展示具有一奈米結構層之光發射之一圖式;Figure 1C is a diagram showing light emission with a nanostructured layer;
圖1D係展示依據角度而變化之透射之一圖表;Figure 1D is a graph showing transmission as a function of angle;
圖1E係具有一奈米結構層之光發射之流程圖;Figure 1E is a flow chart of light emission with a nanostructured layer;
圖1F係具有一奈米結構層之一結構;Figure 1F has a structure of a nanostructure layer;
圖1G係具有一奈米結構層之另一結構;Figure 1G is another structure with a nanostructure layer;
圖1H係具有一奈米結構層之另一結構;Figure 1H is another structure with a nanostructure layer;
圖1I係不同奈米天線之一圖式;Fig. 1I is one diagram of different nano-antennas;
圖1J係一多奈米結構材料陣列;FIG. 1J is a multi-nanostructure material array;
圖1K係不同奈米天線之另一圖式;Figure 1K is another diagram of different nanoantennas;
圖2A係展示一發光二極體(LED)裝置之一圖式;2A is a diagram showing a light emitting diode (LED) device;
圖2B係展示多個LED裝置之一圖式;及FIG. 2B is a diagram showing one of a plurality of LED devices; and
圖3係一例示性應用系統之一圖式。FIG. 3 is a diagram of an exemplary application system.
100:發光二極體(LED)裝置 100: Light Emitting Diode (LED) Devices
102:波長轉換層 102: wavelength conversion layer
110:奈米結構層 110: Nano structure layer
120:基板 120: Substrate
125:背反射器 125: back reflector
130:磊晶生長半導體層 130: Epitaxial growth of semiconductor layer
133:間隙 133: Gap
134:p型層 134: p-type layer
135:作用層 135: Effect layer
137:第一接觸件 137: first contact piece
138:第二接觸件 138: Second contact piece
139:n型層 139: n-type layer
140:側壁材料 140: side wall material
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