WO2020090580A1 - 電子線描画装置用枠部材および電子線描画装置 - Google Patents
電子線描画装置用枠部材および電子線描画装置 Download PDFInfo
- Publication number
- WO2020090580A1 WO2020090580A1 PCT/JP2019/041520 JP2019041520W WO2020090580A1 WO 2020090580 A1 WO2020090580 A1 WO 2020090580A1 JP 2019041520 W JP2019041520 W JP 2019041520W WO 2020090580 A1 WO2020090580 A1 WO 2020090580A1
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- WIPO (PCT)
- Prior art keywords
- electron beam
- frame member
- drawing apparatus
- less
- beam drawing
- Prior art date
Links
- 238000000609 electron-beam lithography Methods 0.000 title claims abstract 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 19
- 239000010980 sapphire Substances 0.000 claims abstract description 19
- 238000010894 electron beam technology Methods 0.000 claims description 53
- 239000011148 porous material Substances 0.000 claims description 27
- 239000011224 oxide ceramic Substances 0.000 claims description 22
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 22
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 230000005484 gravity Effects 0.000 claims description 7
- 238000013001 point bending Methods 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 description 38
- 239000010410 layer Substances 0.000 description 35
- 239000010408 film Substances 0.000 description 33
- 239000002245 particle Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 15
- 238000010438 heat treatment Methods 0.000 description 12
- 239000000843 powder Substances 0.000 description 12
- 238000010304 firing Methods 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000009616 inductively coupled plasma Methods 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000006061 abrasive grain Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000012300 argon atmosphere Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 230000005294 ferromagnetic effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000001272 pressureless sintering Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 239000006249 magnetic particle Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 241001422033 Thestylus Species 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 2
- 239000000347 magnesium hydroxide Substances 0.000 description 2
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 150000003609 titanium compounds Chemical class 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000005028 tinplate Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
- H01J2237/0262—Shields electrostatic
Definitions
- the present disclosure relates to a frame member for an electron beam drawing apparatus and an electron beam drawing apparatus used for manufacturing a mask for an exposure apparatus.
- an exposure device such as a stepper is used to form a circuit pattern on a semiconductor wafer or a glass substrate.
- a mask (reticle) for forming a circuit pattern on a semiconductor wafer or a glass substrate is used in the exposure apparatus. This mask is produced by irradiating a substrate such as a mask blank with an electron beam to draw a circuit pattern using an electron beam drawing apparatus as disclosed in Patent Document 1.
- a frame member (substrate cover) having a conductive layer on the surface is arranged so as to overlap the outer peripheral portion of the substrate in order to prevent the substrate from being charged.
- the frame member is required to generate few particles, to efficiently escape electrons on the substrate, and to prevent the frame member from being easily charged.
- Patent Document 2 discloses a frame member in which an alumina film and a conductive film are laminated on a frame body made of an alumina-based sintered body obtained by pressureless sintering. According to such a frame member, it is possible to efficiently release electrons on the substrate by the conductive film and reduce contamination of the substrate by particles from the alumina-based sintered body. However, with the recent increase in the density of circuit patterns and the like, it is necessary to further reduce the number of particles while maintaining the suppression of electrification in manufacturing a mask.
- the present disclosure has an object to provide a frame member for an electron beam drawing apparatus and an electron beam drawing apparatus in which generation of particles is further reduced while maintaining suppression of charging.
- a frame member for an electron beam drawing apparatus includes a frame body made of sapphire or aluminum oxide ceramics having an open porosity of 0.2% or less, and a conductive film provided on at least a main surface of the frame body on the electron gun side.
- the electron beam drawing apparatus of the present disclosure includes the frame member for the electron beam drawing apparatus.
- FIG. 1 It is sectional drawing which shows the structural example of the electron beam drawing apparatus using the frame member of this indication.
- the outline of the frame member of this indication is shown, (a) is a top view, (b) is a sectional view, (c) is an enlarged view of the A section shown in (b).
- FIG. 1 is a cross-sectional view showing a configuration example of an electron beam drawing apparatus 1 using the frame member 5 of the present disclosure.
- the electron beam drawing apparatus 1 includes a mounting member 3 for mounting the substrate 2, an electron gun 4 for irradiating the substrate 2 with the electron beam E, and a frame member arranged so as to cover the outer peripheral region 2b of the substrate 2. 5 and.
- the substrate 2 is a workpiece.
- the electron beam drawing apparatus 1 irradiates the substrate 2 with the electron beam E to draw the electron beam E, and forms an exposure pattern to produce a mask for the exposure apparatus.
- the substrate 2 is, for example, a mask blank including a glass substrate and an inorganic thin film such as a metal, a metal oxide or a metal nitride formed on the glass substrate.
- An exposure pattern is formed by irradiating the inorganic thin film with an electron beam E to draw it.
- a region where the exposure pattern is formed in the center of the substrate 2 is referred to as a central region 2a, and a region surrounding the central region 2a is referred to as an outer peripheral region 2b.
- the mounting member 3 is, for example, an XY stage, and can position the substrate 2 at a desired position.
- the electron gun 4 is a device that emits electrons into a space, accelerates them by an electric field, converges the electron beam E into a beam, and irradiates the electron beam E to a desired position on the substrate 2.
- FIG. 2 is a schematic view of a frame member of the present disclosure, (a) is a plan view, (b) is a cross-sectional view, and (c) is an enlarged view of part A shown in (b).
- the frame member 5 includes a frame body 6 made of sapphire or aluminum oxide ceramics having an open porosity of 0.2% or less, and a conductive film 7 disposed on the surface of the frame body 6.
- Sapphire is single crystal alumina.
- the aluminum oxide ceramics mean ceramics containing aluminum oxide 96 mass% or more in 100 mass% of components constituting the aluminum oxide ceramics.
- Each component was identified by an X-ray diffractometer, and the content of each component was identified by an X-ray fluorescence analyzer (XRF) or ICP (Inductively Coupled Plasma) emission spectrometer (ICP). It may be converted into an oxide, a carbide, a nitride, or the like depending on the added component.
- XRF X-ray fluorescence analyzer
- ICP Inductively Coupled Plasma emission spectrometer
- the frame member 5 is a frame-shaped member having an opening for irradiating the substrate 2 with the electron beam E, and is arranged apart from the outer peripheral region 2b while covering the outer peripheral region 2b of the substrate 2 in a plan view.
- the electron beam E passes through the opening and reaches the central region 2a of the substrate 2, and the exposure pattern is drawn. However, the electron beam E is shielded by the frame member 5 and does not reach the outer peripheral region 2b of the substrate 2.
- the frame member 5 is ground-faulted, and the frame member 5 and the substrate 2 are electrically connected to each other via an electrical contact such as a ground pin (not shown). As a result, the charge on the substrate 2 is removed via the frame member 5.
- the frame member 5 has an L-shaped cross section along the thickness direction.
- the frame member 5 has an eaves-shaped first portion 5a arranged on the outer peripheral region 2b of the substrate 2, and a second portion 5b thicker than the first portion 5a and surrounding the outside of the first portion 5a. There is.
- the surfaces of the first portion 5a and the second portion 5b on the electron gun 4 side are flush with each other (flat with no step between the two surfaces).
- the back surface of the first region 5a is a step surface that is connected to the inner side surface of the second region 5b, and is arranged so as to face the outer peripheral region 2b of the substrate 2 with a space therebetween.
- the second region 5b extends below the first portion 5a and is arranged such that the inner side surface thereof faces the side surface of the substrate 2 with a space therebetween.
- the frame body 6 forms a main part of the frame member 5, secures the mechanical strength and rigidity of the frame member 5, and suppresses the deformation and damage of the frame member 5.
- Sapphire and aluminum oxide ceramics having an open porosity of 0.2% or less are suitable for the frame body 6 because they have excellent mechanical strength and rigidity.
- Aluminum oxide ceramics having an open porosity of 0.2% or less can be obtained by hot isostatic pressing after pressureless sintering, and sapphire and the aluminum oxide ceramics can be sintered only at atmospheric pressure. Generation of particles is extremely small compared to the obtained ceramics.
- the conductive film 7 is a film that covers the surface of the frame body 6 and is exposed on the surface of the frame member 5.
- the conductive film 7 removes the charges on the substrate 2 and the frame member 5.
- the frame body 6 is a ceramic obtained only by pressureless sintering, there are many open pores existing on the surface of the frame body 6 and grain boundary phases with large depressions, and these open pores and grain boundary phases are formed.
- the conductive film 7 may not be completely covered, which may cause charging.
- the frame body 6 is made of sapphire or aluminum oxide ceramics having an open porosity of 0.2% or less, the open pores existing on the surface and the grain boundary phase having a large dent with respect to the surface Since the amount is reduced and the coating with the conductive film 7 is improved, the frame member 5 is less likely to be charged. Therefore, the electron beam drawing apparatus 1 can improve the drawing accuracy of the electron beam E.
- the total content of ferromagnetic metals is 0.1 mass with respect to 100 mass% of the components constituting the frame body 6. % Or less is preferable. This is because if the ferromagnetic metal is in this range, the electron beam E is less likely to be adversely affected.
- the content of the ferromagnetic metal can be determined with an ICP emission spectroscopy analyzer.
- the conductive film 7 is arranged on at least the main surface of the frame body 6 on the electron gun 4 side. It is desirable that it is formed on the back surface of the first portion 5a and the side surface of the second portion 5b that face the substrate 2, and further that it is formed over the entire surface of the frame member 5.
- the conductive film 7 has a first layer 7a containing titanium as a main component formed on the frame body 6 and a second layer 7b containing a compound of titanium as a main component and arranged on the first layer 7a. May be.
- first layer 7a containing titanium as a main component is interposed between the frame body 6 and the second layer 7b containing a titanium compound as a main component, the frame body 6 and the second layer 7b are bonded together.
- the strength can be increased. Since the exposed surface of the conductive film 7 is composed of the second layer 7b containing a titanium compound as a main component, it is possible to suppress the deterioration of the conductive performance due to the oxidation of the first layer 7a. Furthermore, since the second layer 7b has a higher hardness than the first layer 7a, it is possible to suppress damage to the exposed surface of the conductive film 7.
- the thickness of the first layer 7a is, for example, 0.1 ⁇ m or more and 0.5 ⁇ m or less.
- the thickness of the second layer 7b is, for example, 0.1 ⁇ m or more and 10 ⁇ m or less.
- the main component in the first layer 7a and the second layer 7b means a component that accounts for 90% by mass or more of the total 100% by mass of the components constituting each layer.
- the second layer 7b contains, as a main component, for example, titanium nitride, titanium carbide, titanium carbonitride, or titanium oxide in which oxygen is deficient in the stoichiometric composition.
- each metal component contained in the first layer 7a and the second layer 7b may be determined using a fluorescent X-ray analyzer (XRF) or an ICP emission spectroscopic analyzer.
- XRF fluorescent X-ray analyzer
- ICP emission spectroscopic analyzer The component of the compound forming the second layer 7b may be identified by using an X-ray diffractometer (XRD), and the content of the metal component may be converted into the content of the identified component of the compound.
- XRF fluorescent X-ray analyzer
- XRD X-ray diffractometer
- the substrate 2 is irradiated with a large amount of electron beams E.
- the conductive film 7 is preferably semiconductive.
- the conductive film 7 has a conductivity higher than the level at which electric charges are not charged during electron beam drawing.
- the sheet resistance of the conductive film 7 is 5 ⁇ 10 7 ⁇ / ⁇ or less.
- the thickness of the conductive film 7 is preferably 0.1 ⁇ m or more and 10 ⁇ m or less.
- the conductive film 7 has a thickness of 0.1 ⁇ m or more, the frame body 6 can be more effectively prevented from being charged.
- peeling due to film stress due to film formation can be further suppressed.
- the sheet resistance may be determined according to ASTM F390-11.
- the crushed layer When a crushed layer is formed on the surface of the frame body 6 by mechanical processing, it may cause particles or charge. Therefore, the crushed layer may be removed by etching, CMP (chemical mechanical polishing), or the like.
- CMP chemical mechanical polishing
- the main surface of the frame body 6 on the electron gun 4 side is exposed to the electron beam E, highly accurate surface finishing is required. If the arithmetic average roughness Ra of the main surface of the frame body 6 on the electron gun 4 side is 1 nm or less, particles and charging are less likely to occur.
- the arithmetic average roughness Ra of the main surface on the electron gun 4 side may be measured using a 3D optical surface profiler “NEW VIEW” (registered trademark Zygo Corporation).
- the frame body 6 has an inner side surface facing the workpiece and a step surface connected to the inner side surface and facing the workpiece, and the arithmetic mean roughness Ra of at least one of the inner side surface and the step surface Ra. May be 0.01 ⁇ m or more and 1 ⁇ m or less. If the arithmetic mean roughness Ra of at least one of the inner side surface and the stepped surface of the frame body 6 is 0.01 ⁇ m or more, the surface area of that surface increases, so that the electrons staying in the outer peripheral region 2b of the substrate 2 and the side surface are increased. Will be easier to capture.
- the arithmetic average roughness Ra of at least one of the inner surface and the step surface of the frame body 6 is 1 ⁇ m or less, it becomes difficult for the crystal particles to shed from the surface, and the scattering of particles can be suppressed.
- the arithmetic mean roughness Ra can be determined in accordance with JIS B 0601: 1994, the radius of the stylus is 5 ⁇ m, the material of the stylus is diamond, the measurement length is 1.25 mm, and the cutoff value is 0.25 mm. And it is sufficient.
- the first portion 5a is thinner and more easily cracked than the second portion 5b. By forming streaky irregularities on the back surface of the first portion 5a in the direction from the inner surface toward the second portion 5b, the mechanical strength of the first portion 5a is improved.
- the Vickers hardness of the frame body 5 may be 17 GPa or more. When the Vickers hardness of the frame body 5 is in this range, the chipping resistance is high, so that when the conductive film 7 is formed, chipping is less likely to occur from the main surface, and the adhesion strength of the conductive film 7 to the frame body 5 is improved. It can be raised relatively uniformly.
- the Vickers hardness of the frame body 5 is preferably 20 GPa or more.
- the Vickers hardness can be determined according to JIS R 1610: 2003 (ISO 14705: 2000 (MOD)), and the test force may be 9.807N.
- the three-point bending strength of the frame body 5 may be 380 MPa or more. When the three-point bending strength is in this range, the rigidity is high, and therefore the frame body 5 is not easily deformed even when it is large, and thus it can be used for a long period of time.
- the three-point bending strength of the frame body 5 is preferably 600 MPa or more. Particularly, the three-point bending strength of the frame body 5 is preferably 580 MPa or more.
- the three-point bending strength can be determined according to JIS R 1601: 2008 (ISO 14704: 2000 (MOD)).
- the main surface may be the a-plane.
- the hardness of the a surface is higher than that of the c surface and the m surface, so that a fracture layer is less likely to be formed even when an impact is applied. Therefore, generation of particles can be suppressed.
- the crystal orientation of the main surface may be obtained using an X-ray diffractometer.
- the main surface on the electron gun 4 side has a plurality of open pores, and the average value of the equivalent circle diameters of the open pores is subtracted from the average value of the distances between the centers of gravity of the open pores.
- the value (A) may be 42 ⁇ m or more and 85 ⁇ m or less. When the value (A) is 42 ⁇ m or more, the distance between the open pores that hinders heat conduction becomes large, so that the heat dissipation is further maintained even when exposed to the temperature rise and fall.
- the conductive film 7 When the value (A) is 85 ⁇ m or less, the conductive film 7 easily penetrates into the open pores in the manufacturing process and the anchor effect is easily obtained, and the conductive film 7 having the anchor effect is formed on the frame main body 6 The adhesion to is further improved.
- the distance between the centers of gravity of the open pores can be obtained by the following method.
- a surface layer portion within 0.6 mm from the main surface of the aluminum oxide ceramics on the electron gun 4 side is polished with a copper plate using diamond abrasive grains having an average grain diameter D 50 of 3 ⁇ m.
- a polished surface is obtained by polishing with a tin plate using diamond abrasive grains having an average particle diameter D 50 of 0.5 ⁇ m.
- the conductive film 7 formed on the frame body 6 is also removed, and the arithmetic average roughness Ra of the polished surface can be 0.01 ⁇ m or more and 0.2 ⁇ m or less.
- the arithmetic average roughness Ra of the polished surface is the same as the above-mentioned measuring method.
- the image analysis software “A image-kun” it means image analysis software manufactured by Asahi Kasei Engineering Co., Ltd.
- a threshold value that is an index showing the brightness of the image is 86, the brightness is dark, the small figure removal area is 1 ⁇ m 2 , and a noise removal filter is provided.
- the threshold value may be adjusted according to the brightness of the observed image. The brightness was set to dark, the binarization method was set to manual, the small figure removal area was set to 1 ⁇ m 2 and a noise removal filter was provided, and the threshold value was set so that the marker appearing in the observed image matches the shape of the pore. Should be adjusted.
- the equivalent circle diameter of open pores can be calculated by the following method.
- the equivalent circular diameter of the open pores may be obtained by a method called particle analysis, using the above-mentioned observation image as a target.
- the setting conditions of this method may be the same as the setting conditions used in the method of measuring the distance between centers of gravity of the dispersion degree measurement.
- the average value of the circle equivalent diameter of open pores is 0.3 ⁇ m or less, and the coefficient of variation of the circle equivalent diameter may be 0.4 or less.
- the open pores become smaller and the variation thereof decreases, so that the residual stress that causes the peeling of the conductive film 7 is unlikely to be locally large. ..
- the content of aluminum oxide in the aluminum oxide ceramics may be 99.999 mass% or more.
- the content of aluminum oxide is a value excluding the total content of these elements by determining the content of elements other than aluminum oxide using a glow discharge mass spectrometer (GDMS).
- ⁇ Method of manufacturing frame member> a method for manufacturing the frame member 5 will be described.
- a long sapphire grown by a growth method such as the Czochralski (CZ) method or the edge defined film fed (EFG) method is cut to obtain a plate-shaped sapphire.
- the crystal orientation of the plate-shaped sapphire is, for example, the a plane as the main surface and the c plane and the m plane as the side surfaces.
- the frame body 6 is obtained by cutting processing.
- the first portion 5a is formed by cutting not from the back surface side but from the inner surface side, appropriate unevenness is obtained on the back surface of the first portion 5a, and the mechanical strength of the first portion 5a is improved.
- the main surface of the plate-shaped sapphire is the a-plane, the sapphire is less likely to be broken by cutting from the inner surface side rather than the main surface side.
- the frame body 6 is made of aluminum oxide ceramics.
- the main component aluminum oxide powder (purity of 99.9 mass% or more) and each powder of magnesium hydroxide, silicon oxide and calcium carbonate are put into a mill for grinding together with a solvent (ion-exchanged water). To do. After pulverizing until the average particle diameter (D 50 ) of the powder becomes 1.5 ⁇ m or less, an organic binder and a dispersant for dispersing the aluminum oxide powder are added and mixed to obtain a slurry.
- the content of the magnesium hydroxide powder is 0.43 to 0.53 mass%
- the content of the silicon oxide powder is 0.039 to 0.041 mass%
- the content of the calcium carbonate powder is 100% by mass.
- the content is 0.020 to 0.071% by mass
- the balance is aluminum oxide powder and unavoidable impurities.
- deferring treatment may be performed using a deferring machine.
- the organic binder include acrylic emulsion, polyvinyl alcohol, polyethylene glycol, polyethylene oxide and the like.
- a cold isostatic press is used to apply a molding pressure of 78 MPa or more and 128 MPa or less to obtain a plate-shaped molded body.
- the molded body is prepared by setting the firing temperature to 1500 ° C. or higher and 1600 ° C. or lower, the firing atmosphere to the atmosphere, and the holding time to 4 hours to 6 hours.
- a sintered body can be obtained by firing.
- This sintered body was heat-treated using a hot isostatic press at a heat treatment temperature of 1300 ° C. or more and 1500 ° C. or less, a heat treatment atmosphere of an argon atmosphere, and a pressure of 90 MPa or more and 300 MPa or less.
- the frame body 6 made of 0.2% or less aluminum oxide ceramics can be obtained.
- the heat treatment temperature is 1300 ° C. or more and 1600 ° C. or less
- the heat treatment atmosphere is an argon atmosphere
- the pressure is 100 MPa.
- the heat treatment may be performed at not less than 300 MPa and not more than 300 MPa.
- the molded body is fired at a firing temperature of 1500 ° C. or more and 1600 ° C. or less, a firing atmosphere of atmospheric air, and a holding time of 5 hours or more and 6 hours or less.
- the heat treatment may be performed at a heat treatment temperature of 1300 ° C. or higher and 1600 ° C. or lower, a heat treatment atmosphere of an argon atmosphere, and a pressure of 90 MPa to 300 MPa.
- the frame body made of aluminum-based ceramics having an average equivalent circle diameter of open pores of 0.3 ⁇ m or less and a coefficient of variation of equivalent circle diameter of 0.4 or less, the average particle diameter (D50 ) Is 1.2 ⁇ m or less, the firing temperature is 1500 ° C. or more and 1600 ° C. or less, the firing atmosphere is the air atmosphere, and the holding time is 5 hours or more and 6 hours or less.
- the heat treatment may be performed at a heat treatment temperature of 1300 ° C. or higher and 1600 ° C. or lower, a heat treatment atmosphere of an argon atmosphere, and a pressure of 90 MPa to 300 MPa.
- aluminum oxide powder having a purity of 99.999% by mass or more is put in a grinding mill together with a solvent (ion-exchanged water). It is charged and ground until the average particle diameter (D 50 ) of the powder becomes 1.5 ⁇ m or less. Then, an organic binder and a dispersant for dispersing the aluminum oxide powder are added and mixed to obtain a slurry. After that, molding, firing, and heat treatment may be sequentially performed by the manufacturing method described above.
- the front and back surfaces of the frame body 6 made of sapphire or aluminum oxide ceramics obtained by the above-described manufacturing method are subjected to lapping using diamond abrasive grains.
- the crushed layer is removed from the surface by CMP processing using colloidal silica abrasive grains, and the arithmetic mean roughness Ra is processed to 1 nm or less, for example 0.3 nm or less.
- the inner side surface and the step surface of the frame body 6 are processed by a method such as magnetic fluid polishing so that the arithmetic average roughness Ra is 0.01 ⁇ m or more and 1 ⁇ m or less, for example, 0.1 ⁇ m or less.
- one magnet (not shown) is arranged outside the frame body 6, and magnetic particles and slurry abrasive particles are supplied into the opening.
- the magnet may be rotated and moved in the thickness direction of the frame body 6.
- a magnet is provided so that the direction of the magnetic field is oriented along the thickness direction of the frame body 6, and powder magnetic particles made of a magnetic material such as iron, nickel, cobalt, and specially treated stainless are inserted into the opening.
- the particle size of the magnetic particles is, for example, 0.1 mm or more and 1.5 mm or less.
- a first layer 7a containing titanium as a main component and a second layer 7b containing a compound of titanium as a main component are sequentially formed on at least the main surface of the frame body 6 on the electron gun 4 side by using an ion plating method. In this way, the frame member 5 can be obtained.
- the surface of a frame body 6 made of sapphire is lapped to obtain a frame member 5 having a first layer 7a containing titanium as a main component and a second layer 7b containing titanium nitride as a main component on the surface. It was
- the surface of the frame body 6 made of aluminum oxide ceramic obtained by pressureless sintering is lapped to form a first layer 7a containing titanium as a main component and a second layer 7b containing titanium nitride as a main component.
- a frame member 5 having and on the surface was obtained.
- Both conductive films 7 were irradiated with an electron beam, and the charging states were compared by SEM (scanning electron microscope) photographs.
- 3A and 3B are SEM photographs of the first layer when irradiated with an electron beam, (a) showing an example and (b) showing a comparative example.
- the open pores on the surface of the frame body 6 cannot be completely covered with the conductive film 7, and a part of the contour of the pores shows charge-up due to whitening. From this, it can be said that charging occurs.
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Abstract
Description
本開示の電子線描画装置用枠部材5(以下、単に「枠部材5」と記載する場合がある)について、図を参照しながら説明する。図1は、本開示の枠部材5を用いた電子線描画装置1の構成例を示す断面図である。
以下、枠部材5の製造方法について説明する。まず、枠本体6がサファイアからなる場合について説明する。チョクラルスキー(CZ)法、エッジディファインドフィルムフェッド(EFG)法などの育成方法により育成した長尺状のサファイアを切断して、板状のサファイアを得る。板状のサファイアの結晶方位は、例えば、主面がa面であり、側面がc面およびm面である。
2 基板(被加工物)
2a 中央領域
2b 外周領域
3 載置部材(ステージ)
4 電子銃
5 枠部材(基板カバー)
5a 第1部分
5b 第2部分
6 枠本体
7 導電膜
7a 第1層
7b 第2層
Claims (12)
- サファイアまたは開気孔率が0.2%以下の酸化アルミニウム質セラミックスからなる枠本体と、
該枠本体の少なくとも電子銃側の主面に配された導電膜と、
を備えた電子線描画装置用枠部材。 - 前記導電膜は、前記枠本体上に配されたチタンを主成分とする第1層と、前記第1層上に配されたチタンの化合物を主成分とする第2層とを有する、請求項1に記載の電子線描画装置用枠部材。
- 前記導電膜のシート抵抗が、5×105Ω/□以下である、請求項1または2に記載の電子線描画装置用枠部材。
- 前記枠本体の電子銃側の主面の算術平均粗さRaが1nm以下である、請求項1から3のいずれかに記載の電子線描画装置用枠部材。
- 前記枠本体は、被加工物と対向する内側面と、該内側面に接続して前記被加工物と対向する段差面とを備えており、
前記内側面および前記段差面の少なくともいずれかの算術平均粗さRaが0.01μm以上1μm以下である、請求項1から4のいずれかに記載の電子線描画装置用枠部材。 - 前記枠本体のビッカース硬度は17GPa以上である、請求項1から5のいずれかに記載の電子線描画装置用枠部材。
- 前記枠本体の3点曲げ強度は380MPa以上である、請求項1から6のいずれかに記載の電子線描画装置用枠部材。
- 前記枠本体はサファイアからなり、前記主面がa面である、請求項1から5のいずれかに記載の電子線描画装置用枠部材。
- 前記枠本体は酸化アルミニウム質セラミックスからなり、前記電子銃側の主面は複数の開気孔を有し、前記開気孔の重心間距離の平均値から前記開気孔の円相当径の平均値を差し引いた値(A)が42μm以上85m以下である、請求項1から5のいずれかに記載の電子線描画装置用枠部材。
- 前記開気孔の円相当径の平均値は0.3μm以下であり、前記円相当径の変動係数は、0.4以下である、請求項9に記載の電子線描画装置用枠部材。
- 前記枠本体は酸化アルミニウム質セラミックスからなり、該酸化アルミニウム質セラミックスにおける酸化アルミニウムの含有量は、99.999質量%以上である、請求項1から7のいずれか、または請求項9もしくは10に記載の電子線描画装置用枠部材。
- 請求項1から11のいずれかに記載の電子線描画装置用枠部材を含む電子線描画装置。
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JP2020553813A JP7075499B2 (ja) | 2018-10-29 | 2019-10-23 | 電子線描画装置用枠部材および電子線描画装置 |
US17/288,321 US11934096B2 (en) | 2018-10-29 | 2019-10-23 | Frame member for electron beam lithography device and electron beam lithography device |
KR1020217012192A KR102573502B1 (ko) | 2018-10-29 | 2019-10-23 | 전자선 묘화 장치용 프레임 부재 및 전자선 묘화 장치 |
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JP2008058809A (ja) * | 2006-09-01 | 2008-03-13 | Nuflare Technology Inc | 基板カバー、荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
JP2011134974A (ja) * | 2009-12-25 | 2011-07-07 | Nuflare Technology Inc | 基板カバーおよびそれを用いた荷電粒子ビーム描画方法 |
JP2012134205A (ja) * | 2010-12-20 | 2012-07-12 | Nuflare Technology Inc | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
JP2013229463A (ja) * | 2012-04-26 | 2013-11-07 | Kyocera Corp | 枠部材およびそれを用いた電子線描画装置 |
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US5834840A (en) * | 1995-05-25 | 1998-11-10 | Massachusetts Institute Of Technology | Net-shape ceramic processing for electronic devices and packages |
US5801073A (en) * | 1995-05-25 | 1998-09-01 | Charles Stark Draper Laboratory | Net-shape ceramic processing for electronic devices and packages |
KR100873447B1 (ko) * | 2000-07-27 | 2008-12-11 | 가부시키가이샤 에바라 세이사꾸쇼 | 시트빔식 검사장치 |
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JP2008058809A (ja) * | 2006-09-01 | 2008-03-13 | Nuflare Technology Inc | 基板カバー、荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
JP2011134974A (ja) * | 2009-12-25 | 2011-07-07 | Nuflare Technology Inc | 基板カバーおよびそれを用いた荷電粒子ビーム描画方法 |
JP2012134205A (ja) * | 2010-12-20 | 2012-07-12 | Nuflare Technology Inc | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
JP2013229463A (ja) * | 2012-04-26 | 2013-11-07 | Kyocera Corp | 枠部材およびそれを用いた電子線描画装置 |
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US11934096B2 (en) | 2024-03-19 |
TW202034368A (zh) | 2020-09-16 |
US20210375579A1 (en) | 2021-12-02 |
KR102573502B1 (ko) | 2023-09-01 |
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