WO2020062383A1 - 柔性微型压电超声换能器、阵列及其形成方法 - Google Patents

柔性微型压电超声换能器、阵列及其形成方法 Download PDF

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Publication number
WO2020062383A1
WO2020062383A1 PCT/CN2018/112074 CN2018112074W WO2020062383A1 WO 2020062383 A1 WO2020062383 A1 WO 2020062383A1 CN 2018112074 W CN2018112074 W CN 2018112074W WO 2020062383 A1 WO2020062383 A1 WO 2020062383A1
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flexible
pmut
ultrasonic transducer
flexible substrate
layer
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PCT/CN2018/112074
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English (en)
French (fr)
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庞慰
孙圣
张孟伦
高传海
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天津大学
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/101—Piezoelectric or electrostrictive devices with electrical and mechanical input and output, e.g. having combined actuator and sensor parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors

Definitions

  • the invention relates to the field of semiconductor technology, in particular to a flexible miniature piezoelectric ultrasonic transducer, an array and a method for forming the same.
  • the current miniature piezoelectric ultrasonic transducer (Piezoelectric Micromachined Ultrasound Transducer, PMUT for short) is mostly based on a silicon substrate. Although rigid silicon substrates can protect the device from environmental damage, PMUTs based on rigid substrates are generally not easy to bend and cannot easily implement the requirements of curved skin imaging and other applications, which limits PMUT devices to implantable, wearable, Potential applications in non-intrusive directions.
  • the present invention provides a flexible miniature piezoelectric ultrasonic transducer, an array and a method for forming the same.
  • the device or array has a flexible substrate, has good flexibility, and has a wide application range.
  • a flexible miniature piezoelectric ultrasonic transducer including: a flexible substrate and a PMUT structure, wherein a top of the flexible substrate has a first cavity, and a depth of the first cavity is less than or equal to A thickness of the flexible substrate; the PMUT structure is located on the flexible substrate, and the PMUT structure includes at least a lower electrode, a piezoelectric layer, and an upper electrode.
  • the PMUT structure includes a mechanical layer, a lower electrode, a piezoelectric layer, and an upper electrode, which are arranged in order from bottom to top; the flexible substrate and the mechanical layer are in contact with each other.
  • the PMUT structure includes a bottom electrode, a piezoelectric layer, an upper electrode, and a mechanical layer arranged in order from bottom to top; the flexible substrate and the piezoelectric layer are in contact with each other, and the lower electrode is located at Mentioned in the first cavity.
  • the PMUT structure includes a bottom electrode, a piezoelectric layer, and an upper electrode which are arranged in order from bottom to top; the flexible substrate and the lower electrode are in contact with each other.
  • top package structure which further includes a top coupling structure, wherein the top coupling structure is located above the PMUT structure, and the top coupling structure includes a top solid coupling layer, or the top coupling
  • the structure includes a top package structure and a coupling fluid.
  • a shape of a horizontal section of the upper electrode, the piezoelectric layer, and the first cavity is a polygon or a circle, and a horizontal section of the upper electrode is smaller than a horizontal section of the piezoelectric layer.
  • the material of the flexible substrate includes: polyimide, polydimethylsiloxane, polyester resin, polycarbonate, polyethylene naphthalate, polyethersulfone, polyetherimide , Polyvinyl alcohol or fluoropolymer.
  • the material of the piezoelectric layer includes: aluminum nitride, zinc oxide, lead zirconate titanate, polyvinylidene fluoride, lithium niobate, quartz, potassium niobate, or lithium tantalate.
  • a second aspect of the present invention provides a method for forming a flexible miniature piezoelectric ultrasonic transducer, including: providing a sacrificial substrate; and forming a PMUT structure on the sacrificial substrate.
  • the PMUT structure includes at least a lower electrode, a piezoelectric layer, and Upper electrode; removing the sacrificial substrate; providing a flexible substrate having a first cavity on top of the flexible substrate, the depth of the first cavity being less than or equal to the thickness of the flexible substrate; and stamping the PMUT structure through a stamp transfer process Transfer onto the flexible substrate.
  • the step of forming a PMUT structure on the sacrificial substrate includes: sequentially forming a mechanical layer, a lower electrode, a piezoelectric layer, and an upper electrode on the sacrificial substrate from bottom to top; and passing the seal During the process of transferring the PMUT structure onto the flexible substrate, the flexible substrate and the mechanical layer are in contact with each other.
  • the step of forming a PMUT structure on the sacrificial substrate includes: forming a lower electrode, a piezoelectric layer, an upper electrode, and a mechanical layer in sequence from bottom to top on the sacrificial substrate; During the process of transferring the PMUT structure onto the flexible substrate, the flexible substrate and the piezoelectric layer are in contact with each other, and the lower electrode is located in the first cavity.
  • the step of forming a PMUT structure on the sacrificial substrate includes: sequentially forming a lower electrode, a piezoelectric layer, and an upper electrode on the sacrificial substrate from bottom to top; During the transfer of the PMUT structure onto the flexible substrate, the flexible substrate and the lower electrode are in contact with each other.
  • top coupling structure further comprises forming a top coupling structure, wherein the top coupling structure is located above the PUMT structure; the top coupling structure includes a top solid coupling layer, or the top coupling structure includes a top packaging structure and a coupling liquid.
  • a shape of a horizontal section of the upper electrode, the piezoelectric layer, and the first cavity is a polygon or a circle, and a horizontal section of the upper electrode is smaller than a horizontal section of the piezoelectric layer.
  • the material of the flexible substrate includes: polyimide, polydimethylsiloxane, polyester resin, polycarbonate, polyethylene naphthalate, polyethersulfone, polyetherimide , Polyvinyl alcohol or fluoropolymer.
  • the material of the piezoelectric layer includes: aluminum nitride, zinc oxide, lead zirconate titanate, polyvinylidene fluoride, lithium niobate, quartz, potassium niobate, or lithium tantalate.
  • a flexible miniature piezoelectric ultrasonic transducer array including: a flexible substrate having a plurality of first cavities on top of the flexible substrate, and the depth of the first cavity is less than or equal to the depth of the first cavity; The thickness of the flexible substrate; multiple PMUT structures located on the flexible substrate and covering the multiple first cavities, the PMUT structure from top to bottom includes: an upper electrode, a piezoelectric layer , Lower electrode and mechanical layer.
  • the mechanical layers in the multiple PMUT structures are continuously common.
  • the lower electrodes in the multiple PMUT structures are continuously common.
  • the plurality of PMUT structures are separated from each other, and a gap between adjacent PMUT structures is filled with a flexible filling material.
  • the upper electrode or the lower electrode in the plurality of PMUT structures are connected in a curved manner.
  • a fourth aspect of the present invention provides a method for forming a flexible miniature piezoelectric ultrasonic transducer array, including: providing a sacrificial substrate; and forming a plurality of PMUT structures on the sacrificial substrate.
  • the PMUT structure includes: Upper electrode, piezoelectric layer, lower electrode, and mechanical layer; removing the sacrificial substrate; providing a flexible substrate having a plurality of first cavities on top of the flexible substrate, the depth of the first cavity being less than or equal to the flexible substrate Thickness; a plurality of PMUT structures are transferred onto the flexible substrate by a stamp transfer process and cover the plurality of first cavities.
  • the mechanical layers in the multiple PMUT structures are continuously common.
  • the lower electrodes in the multiple PMUT structures are continuously common.
  • the plurality of PMUT structures are separated from each other, and a gap between adjacent PMUT structures is filled with a flexible filling material.
  • the upper electrode or the lower electrode in the plurality of PMUT structures are connected in a curved manner.
  • a flexible miniature piezoelectric ultrasonic transducer an array and a method for forming the same according to the present invention.
  • the device or array has the advantages of a flexible substrate, good flexibility, and a wide range of applications.
  • the corresponding formation method is simple and easy , The advantages of mature technology.
  • FIG. 1 is a schematic structural diagram of a flexible miniature piezoelectric ultrasonic transducer according to a first embodiment of the present invention
  • FIG. 2 is a schematic structural diagram of a flexible miniature piezoelectric ultrasonic transducer according to a second embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of a flexible miniature piezoelectric ultrasonic transducer according to a third embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of a flexible miniature piezoelectric ultrasonic transducer according to a fourth embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of a flexible miniature piezoelectric ultrasonic transducer according to a fifth embodiment of the present invention.
  • FIG. 6 is a schematic structural diagram of a flexible miniature piezoelectric ultrasonic transducer according to a sixth embodiment of the present invention.
  • FIG. 7a to 7d are schematic top plan views of an electrode layer and a piezoelectric layer of a flexible miniature piezoelectric ultrasonic transducer according to an embodiment of the present invention
  • FIGS. 8a to 8g are schematic flowcharts of a method for forming a flexible miniature piezoelectric ultrasonic transducer according to an embodiment of the present invention.
  • FIG. 9 is a schematic perspective view of a flexible miniature piezoelectric ultrasonic transducer array
  • FIG. 10 is a schematic structural diagram of a flexible miniature piezoelectric ultrasonic transducer array according to a first embodiment of the present invention
  • FIG. 11 is a schematic structural diagram of a flexible miniature piezoelectric ultrasonic transducer array according to a second embodiment of the present invention.
  • FIG. 12 is a schematic structural diagram of a flexible miniature piezoelectric ultrasonic transducer array according to a third embodiment of the present invention.
  • FIG. 13 is a schematic structural diagram of a flexible miniature piezoelectric ultrasonic transducer array according to a fourth embodiment of the present invention.
  • FIG. 14 is a schematic structural diagram of a flexible miniature piezoelectric ultrasonic transducer array according to a fifth embodiment of the present invention.
  • first and second are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as “first” and “second” may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality” is two or more, unless specifically defined otherwise.
  • the terms “installation”, “connected”, “connected”, “fixed” and other terms shall be understood in a broad sense unless otherwise specified and defined, for example, they may be fixed connections or removable connections , Or integrally connected; it can be mechanical or electrical; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two elements.
  • the specific meanings of the above terms in the present invention can be understood according to specific situations.
  • the "first" or “down” of the second feature may include the first and second features in direct contact, and may also include the first and second features. Not directly, but through another characteristic contact between them.
  • the first feature is “above”, “above”, and “above” the second feature, including that the first feature is directly above and obliquely above the second feature, or merely indicates that the first feature is higher in level than the second feature.
  • the first feature is “below”, “below”, and “below” of the second feature, including the fact that the first feature is directly below and obliquely below the second feature, or merely indicates that the first feature is less horizontal than the second feature.
  • a flexible miniature piezoelectric ultrasonic transducer including: a flexible substrate and a PMUT structure, wherein the top of the flexible substrate has a first cavity, and the depth of the first cavity is less than or equal to the thickness of the flexible substrate. ;
  • the PMUT structure is located on a flexible substrate, and the PMUT structure includes at least a lower electrode, a piezoelectric layer, and an upper electrode.
  • the flexible miniature piezoelectric ultrasonic transducer of this embodiment has a flexible substrate, has good flexibility, and has a wide application range.
  • the cavity when the depth of the first cavity is less than the thickness of the flexible substrate, the cavity is of a cavity type; when the depth of the first cavity is equal to the thickness of the flexible substrate, the cavity is a back-engraved type. Cavity-type sound waves are reflected in the cavity, which affects device performance. The back-engraved sound waves pass directly into the air on the lower surface without affecting the vibration.
  • the PMUT structure includes: a mechanical layer, a lower electrode, a piezoelectric layer, and an upper electrode, which are arranged in order from bottom to top; the flexible substrate and the mechanical layer are in contact with each other.
  • the PMUT structure includes a bottom electrode, a piezoelectric layer, an upper electrode, and a mechanical layer arranged in order from bottom to top; the flexible substrate and the piezoelectric layer are in contact with each other, and the lower electrode is located in the first cavity.
  • the PMUT structure includes a bottom electrode, a piezoelectric layer, and an upper electrode which are arranged in order from bottom to top; the flexible substrate and the lower electrode are in contact with each other.
  • the flexible miniature piezoelectric ultrasonic transducer further includes a top coupling structure, which is located above the PMUT structure.
  • the top coupling structure is used to increase the acoustic transmission between the PMUT structure and the target.
  • the coupling layer can be in contact with the electrode and the piezoelectric layer on the PMUT structure.
  • the top coupling structure may include a top solid coupling layer; or, the top coupling structure includes a top packaging structure and a coupling liquid.
  • the shape of the horizontal cross section of the upper electrode, the piezoelectric layer, and the first cavity is a polygon or a circle, and the horizontal cross section of the upper electrode is smaller than the horizontal section of the piezoelectric layer.
  • the vibration frequency, capacitance, impedance and other properties of different structures will be different.
  • a second aspect of the present invention provides a method for forming a flexible miniature piezoelectric ultrasonic transducer, including: providing a sacrificial substrate; and forming a PMUT structure on the sacrificial substrate.
  • the PMUT structure includes at least a lower electrode, a piezoelectric layer, and an upper electrode; Sacrificing the substrate; providing a flexible substrate with a first cavity on top of the flexible substrate, the depth of the first cavity being less than or equal to the thickness of the flexible substrate; and transferring the PMUT structure onto the flexible substrate by a stamp transfer process.
  • the step of forming a PMUT structure on the sacrificial substrate includes: sequentially forming a mechanical layer, a lower electrode, a piezoelectric layer, and an upper electrode on the sacrificial substrate from bottom to top; and transferring the PMUT structure to flexible by a stamp transfer process. During the process on the substrate, the flexible substrate and the mechanical layer are in contact with each other.
  • the step of forming a PMUT structure on the sacrificial substrate includes: forming a lower electrode, a piezoelectric layer, an upper electrode, and a mechanical layer in this order from bottom to top on the sacrificial substrate; and transferring the PMUT structure to flexible by a stamp transfer process.
  • the flexible substrate and the piezoelectric layer are in contact with each other, and the lower electrode is located in the first cavity.
  • the step of forming a PMUT structure on the sacrificial substrate includes: forming a lower electrode, a piezoelectric layer, and an upper electrode in sequence from bottom to top on the sacrificial substrate; and transferring the PMUT structure to the flexible substrate through a stamp transfer process. During the process, the flexible substrate and the lower electrode are in contact with each other.
  • the method further includes forming a top coupling structure, wherein the top coupling structure is located on the PUMT structure, the top coupling structure includes a top solid coupling layer, or the top coupling structure includes a top packaging structure and a coupling liquid.
  • the shape of the horizontal cross section of the upper electrode, the piezoelectric layer, and the first cavity is a polygon or a circle, and the horizontal cross section of the upper electrode is smaller than the horizontal section of the piezoelectric layer.
  • a flexible micro-piezoelectric ultrasonic transducer array includes a flexible substrate, and the top of the flexible substrate has a plurality of first cavities, the depth of the first cavity is less than or equal to the thickness of the flexible substrate; PMUT structures. Multiple PMUT structures are located on the flexible substrate and cover multiple first cavities.
  • the PMUT structure includes an upper electrode, a piezoelectric layer, a lower electrode, and a mechanical layer from top to bottom. Preferably, the PMUT structure is fully aligned with the first cavity.
  • the mechanical layers in the multiple PMUT structures are continuously common.
  • Such an array structure is relatively simple and easy to process.
  • the lower electrodes in multiple PMUT structures are continuously common. Such an array structure is simpler and easier to process.
  • a plurality of PMUT structures are separated from each other, and a gap between adjacent PMUT structures is filled with a flexible filling material.
  • Such arrays have good flexibility and a wide range of applications.
  • the upper electrode or the lower electrode in a plurality of PMUT structures are connected in a curved manner.
  • the characteristics of electrode curve connection ensure that the array has good flexibility and is widely used.
  • a method for forming a flexible miniature piezoelectric ultrasonic transducer array includes: providing a sacrificial substrate; and forming a plurality of PMUT structures on the sacrificial substrate. Electrical layer, lower electrode, and mechanical layer; removing the sacrificial substrate; providing a flexible substrate, the top of the flexible substrate has a plurality of first cavities, the depth of the first cavity is less than or equal to the thickness of the flexible substrate; The PMUT structure is transferred onto a flexible substrate and covers a plurality of first cavities. Preferably, the PMUT structure is fully aligned with the first cavity.
  • the mechanical layers in the multiple PMUT structures are continuously common.
  • the lower electrodes in multiple PMUT structures are continuously common.
  • a plurality of PMUT structures are separated from each other, and a gap between adjacent PMUT structures is filled with a flexible filling material.
  • the upper electrode or the lower electrode in a plurality of PMUT structures are connected in a curved manner.
  • the material of the flexible substrate may be polyimide (PI), polydimethylsiloxane (PDMS), polyester resin (PET), polycarbonate (PC), polyethylene naphthalate (PEN ), Polyethersulfone (PES), polyetherimide (PEI), polyvinyl alcohol (PVA), various fluoropolymers (FEP), etc.
  • PI polyimide
  • PDMS polydimethylsiloxane
  • PET polyester resin
  • PC polycarbonate
  • PEN polyethylene naphthalate
  • PES polyethersulfone
  • PEI polyetherimide
  • PVA polyvinyl alcohol
  • FEP various fluoropolymers
  • the material of the electrode may be metals such as gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), aluminum (Al), titanium (Ti), and the like Alloy.
  • the material of the piezoelectric layer may be aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), polyvinylidene fluoride (PVDF), lithium niobate (LiNbO 3 ), quartz (Quartz), Materials such as potassium niobate (KNbO 3 ) or lithium tantalate (LiTaO 3 ) and combinations thereof.
  • the material of the mechanical layer may be silicon dioxide, silicon, silicon nitride, aluminum nitride, or the like.
  • the material of the sacrificial substrate may be silicon.
  • the material of the solid coupling layer may be polyimide (PI), polydimethylsiloxane (PDMS), polyester resin (PET) polycarbonate (PC), polyethylene naphthalate (PEN ), Polyethersulfone (PES), polyetherimide (PEI), polyvinyl alcohol (PVA), various fluoropolymers (FEP).
  • PI polyimide
  • PDMS polydimethylsiloxane
  • PET polyester resin
  • PC polycarbonate
  • PEN polyethylene naphthalate
  • PES polyethersulfone
  • PEI polyetherimide
  • PVA polyvinyl alcohol
  • FEP various fluoropolymers
  • the material of the coupling liquid may be a fluorinated liquid, water, an aqueous polymer gel, a latex liquid, a rubber solution, or the like.
  • the top packaging layer may be a high molecular polymer material.
  • FIG. 1 is a schematic structural diagram of a flexible miniature piezoelectric ultrasonic transducer according to a first embodiment of the present invention.
  • the structure of the flexible miniature piezoelectric ultrasonic transducer includes an upper electrode 111, a piezoelectric layer 112, a lower electrode 113, a mechanical layer 114, and a flexible substrate 115 from top to bottom.
  • the PMUT four-layer structure 110 is located above the cavity 116 and completely covers the cavity in alignment with the cavity.
  • the method for forming the flexible miniature piezoelectric ultrasonic transducer is as follows: (1) A PMUT mechanical layer 114, a lower electrode 113, a piezoelectric layer 112, and an upper electrode 111 are sequentially fabricated on a silicon substrate.
  • a cavity 116 with a certain cross-sectional area and a certain depth is made on the flexible substrate 115 (the cavity depth is less than the height of the substrate).
  • FIG. 2 is a schematic structural diagram of a flexible miniature piezoelectric ultrasonic transducer according to a second embodiment of the present invention.
  • the structure of the flexible miniature piezoelectric ultrasonic transducer includes an upper electrode 111, a piezoelectric layer 112, a lower electrode 113, a mechanical layer 114, and a flexible substrate 115 from top to bottom.
  • the PMUT four-layer structure 110 is located above the cavity 116 and completely covers the cavity in alignment with the cavity.
  • the method for forming the flexible miniature piezoelectric ultrasonic transducer is as follows: (1) A PMUT mechanical layer 114, a lower electrode 113, a piezoelectric layer 112, and an upper electrode 111 are sequentially fabricated on a silicon substrate.
  • a cavity 116 with a certain cross-sectional area and a certain depth is made on the flexible substrate 115 (the cavity depth is equal to the height of the substrate).
  • FIG. 3 is a schematic structural diagram of a flexible miniature piezoelectric ultrasonic transducer according to a third embodiment of the present invention.
  • the structure of the flexible miniature piezoelectric ultrasonic transducer includes a mechanical layer 114, an upper electrode 111, a piezoelectric layer 112, a lower electrode 113, and a flexible substrate 115 from top to bottom.
  • the PMUT four-layer structure 110 is located above the cavity 116 and completely covers the cavity in alignment with the cavity.
  • the method for forming the flexible miniature piezoelectric ultrasonic transducer is as follows: (1) A PMUT lower electrode 113, a piezoelectric layer 112, an upper electrode 111, and a mechanical layer 114 are sequentially fabricated on a silicon substrate.
  • a cavity 116 having a certain cross-sectional area and a certain depth is made on the flexible substrate 115.
  • FIG. 4 is a schematic structural diagram of a flexible miniature piezoelectric ultrasonic transducer according to a fourth embodiment of the present invention.
  • the structure of the flexible miniature piezoelectric ultrasonic transducer includes an upper electrode 111, a piezoelectric layer 112, a lower electrode 113, and a flexible substrate 115 from top to bottom.
  • the PMUT four-layer structure 110 is located above the cavity 116 and completely covers the cavity in alignment with the cavity.
  • the method for forming the flexible miniature piezoelectric ultrasonic transducer is as follows: (1) A PMUT lower electrode, that is, a mechanical layer 113, a piezoelectric layer 112, and an upper electrode 111 are sequentially formed on a silicon substrate.
  • a cavity 116 having a certain cross-sectional area and a certain depth is made on the flexible substrate 115.
  • FIG. 5 is a schematic structural diagram of a flexible miniature piezoelectric ultrasonic transducer according to a fifth embodiment of the present invention.
  • the structure of the flexible miniature piezoelectric ultrasonic transducer includes an upper electrode 111, a piezoelectric layer 112, a lower electrode 113, a mechanical layer 114, a flexible substrate 115, and a solid coupling layer 117.
  • the PMUT four-layer structure 110 is located above the cavity 116.
  • the method of forming the flexible miniature piezoelectric ultrasonic transducer is as follows: (1) A PMUT mechanical layer 114, a lower electrode 113, a piezoelectric layer 112, and an upper electrode 111 are sequentially formed on a silicon substrate.
  • a cavity 116 having a certain cross-sectional area is formed on the flexible substrate 115.
  • the solid coupling layer 117 is covered above.
  • FIG. 6 is a schematic structural diagram of a flexible miniature piezoelectric ultrasonic transducer according to a sixth embodiment of the present invention.
  • the structure of the flexible miniature piezoelectric ultrasonic transducer includes an upper electrode 111, a piezoelectric layer 112, a lower electrode 113, a mechanical layer 114, a flexible substrate 115, a coupling liquid 118, and a top package structure 119.
  • the PMUT four-layer structure 110 is located above the cavity 116.
  • the coupling liquid 118 is filled between the PMUT four-layer structure 110 and the top package structure 119.
  • the method for forming the flexible miniature piezoelectric ultrasonic transducer is as follows: (1) A PMUT mechanical layer 114, a lower electrode 113, a piezoelectric layer 112, and an upper electrode 111 are sequentially fabricated on a silicon substrate. (2) A cavity 116 having a certain cross-sectional area is formed on the flexible substrate 115. (3) Using a high-adhesion elastomer soft seal, lift the PMUT four-layer structure 110 from the silicon substrate and then transfer it to the flexible substrate 115, while ensuring that the effective area of the PMUT structure and the cavity on the flexible substrate quasi. (4) The top package structure 119 with a cavity is covered above, and then the coupling liquid 118 is filled between the top package structure 119 and the PMUT four-layer structure 110.
  • the upper electrode (111a, 111b, 111c, and 111d) and the piezoelectric layer (112a, 112b, 112c, and 112d) may have various shapes (square (Polygons, such as pentagons, pentagons, hexagons, etc., can also be circular), and the area of the upper electrode is slightly smaller than the piezoelectric layer to achieve better performance.
  • FIGS. 8a to 8g are schematic flowcharts of a method for forming a flexible miniature piezoelectric ultrasonic transducer according to an embodiment of the present invention.
  • the forming method includes the following steps:
  • a mechanical layer 114 is grown on a silicon substrate 117 (the material of the mechanical layer may be silicon dioxide, silicon nitride, aluminum nitride, etc.);
  • the lower electrode 113 is grown on the surface of the mechanical layer 114 (the lower electrode material may be molybdenum, aluminum, gold, etc.);
  • the upper electrode 111 is processed on the surface of the piezoelectric layer 112 (the upper electrode material may be molybdenum, aluminum, gold, etc.);
  • Figure 8e Preparation of a flexible substrate 115 (the flexible substrate material may be PI, PET, etc.);
  • a cavity 116 of a certain area and a certain depth is made on the flexible substrate 115, and the cavity shape is the same as the shape of the membrane;
  • Figure 8g Using a high-adhesion elastomer soft seal, the PMUT four-layer structure 110 is lifted from the silicon substrate and then transferred to the flexible substrate 115, while ensuring the effective area of the PMUT structure and the cavity 116 on the flexible substrate alignment.
  • FIG. 9 is a schematic perspective view of a flexible miniature piezoelectric ultrasonic transducer array.
  • the curved object in the figure is a flexible miniature piezoelectric ultrasonic transducer array, which is provided with a plurality of raised dots, and each raised dot represents a piezoelectric ultrasonic transducer.
  • FIG. 10 is a schematic structural diagram of a flexible miniature piezoelectric ultrasonic transducer array according to a first embodiment of the present invention.
  • the flexible miniature piezoelectric ultrasonic transducer array includes an upper electrode 111, a piezoelectric layer 112, a lower electrode 113, a mechanical layer 114, and a flexible substrate 115 from top to bottom.
  • the PMUT four-layer structure 110 is transferred over the flexible substrate 115 and aligned with the cavity 116 to completely cover the cavity.
  • the method of forming the flexible miniature piezoelectric ultrasonic transducer array is as follows: (1) A PMUT mechanical layer 114, a lower electrode 113, a piezoelectric layer 112, and an upper electrode 111 are sequentially fabricated on a silicon substrate. (2) Making a plurality of cavities 116 with a certain cross-sectional area and a certain depth on the flexible substrate 115 (the cavity depth is less than the height of the substrate). (3) Using a highly adhesive elastomer soft seal, lift all PMUT four-layer structures 110 from the silicon substrate, and then transfer them to the flexible substrate 115, while ensuring the effective area of each device and the space on the flexible substrate. The cavity 116 is aligned.
  • the flexible miniature piezoelectric ultrasonic transducer array includes an upper electrode 111, a piezoelectric layer 112, a lower electrode 113, a mechanical layer 114, and a flexible substrate 115 from top to bottom.
  • the PMUT four-layer structure 110 is transferred over the flexible substrate 115 and aligned with the cavity 116 to completely cover the cavity.
  • the PMUT array is connected to the flexible substrate 115 through the mechanical layer 114, which reduces the processing of the mechanical layer 114, simplifies the process steps, and improves the stability of the PMUT flexible array.
  • the method of forming the flexible miniature piezoelectric ultrasonic transducer array is as follows: (1) A PMUT mechanical layer 114, a lower electrode 113, a piezoelectric layer 112, and an upper electrode 111 are sequentially fabricated on a silicon substrate. (2) Making a plurality of cavities 116 with a certain cross-sectional area and a certain depth on the flexible substrate 115 (the cavity depth is less than the height of the substrate). (3) Using a highly adhesive elastomer soft seal, lift all PMUT four-layer structures 110 from the silicon substrate, and then transfer them to the flexible substrate 115, while ensuring the effective area of each device and the space on the flexible substrate. The cavity 116 is aligned.
  • FIG. 12 is a schematic structural diagram of a flexible miniature piezoelectric ultrasonic transducer array according to a third embodiment of the present invention.
  • the flexible miniature piezoelectric ultrasonic transducer array includes an upper electrode 111, a piezoelectric layer 112, a lower electrode 113, a mechanical layer 114, and a flexible substrate 115 from top to bottom.
  • the PMUT four-layer structure 110 is transferred over the flexible substrate and aligned with the cavity 116 to completely cover the cavity.
  • the PMUT array is connected to the flexible substrate 115 through the lower electrode layer 113 and the silicon layer 114. There is no need to electrically connect each PMUT structure, only an external circuit is required, and the circuit processing is simple.
  • the method of forming the flexible miniature piezoelectric ultrasonic transducer array is as follows: (1) A PMUT mechanical layer 114, a lower electrode 113, a piezoelectric layer 112, and an upper electrode 111 are sequentially fabricated on a silicon substrate. (2) Making a plurality of cavities 116 with a certain cross-sectional area and a certain depth on the flexible substrate 115 (the cavity depth is less than the height of the substrate).
  • Fig. 13 is a schematic structural diagram of a flexible miniature piezoelectric ultrasonic transducer array according to a fourth embodiment of the present invention.
  • the flexible miniature piezoelectric ultrasonic transducer array includes an upper electrode 111, a piezoelectric layer 112, a lower electrode 113, a mechanical layer 114, and a flexible substrate 115 from top to bottom.
  • the PMUT four-layer structure is transferred over the flexible substrate 115 and aligned with the cavity 116 to completely cover the cavity.
  • the PMUT structure is connected through the flexible substrate 115.
  • each structural gap of the PMUT is filled with the flexible material 115, which increases the bending performance of the array and can greatly improve the flexibility of the PMUT array.
  • the method of forming the flexible miniature piezoelectric ultrasonic transducer array is as follows: (1) A PMUT mechanical layer 114, a lower electrode 113, a piezoelectric layer 112, and an upper electrode 111 are sequentially fabricated on a silicon substrate. (2) Making a plurality of cavities 116 with a certain cross-sectional area and a certain depth on the flexible substrate 115 (the cavity depth is less than the height of the substrate). (3) Using a highly adhesive elastomer soft seal, lift all PMUT four-layer structures 110 from the silicon substrate and then transfer them to the flexible substrate, while ensuring the effective area of each device and the cavity on the flexible substrate 116 alignment.
  • the flexible miniature piezoelectric ultrasonic transducer array includes an upper power layer 111, a piezoelectric layer 112, a lower electrode 113, a mechanical layer 114, and a flexible substrate 115 from top to bottom.
  • the PMUT four-layer structure 110 is located above the flexible substrate 115 and is aligned with the cavity 116 to completely cover the cavity.
  • the PMUT array is connected to the flexible substrate 115 through the lower electrode layer 113 and the support layer 114.
  • the electrode connection structure in the device array of this embodiment is curved, which can increase the electrode flexibility and reduce the possibility of fracture. .

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Abstract

一种柔性微型压电超声换能器包括：柔性基底（115）和PMUT四层结构（110），其中：柔性基底（115）的顶部具有空腔（116），空腔（116）的深度小于或者等于柔性基底（115）的厚度；PMUT四层结构（110）位于柔性基底（115）之上，PMUT四层结构（110）至少包括下电极（113）、压电层（112）以及上电极（111）。该柔性微型压电超声换能器具有柔性基底（115），柔韧性佳，应用范围广。还提供柔性微型压电超声换能器阵列以及它们的形成方法。

Description

柔性微型压电超声换能器、阵列及其形成方法 技术领域
本发明涉及半导体技术领域，特别地涉及一种柔性微型压电超声换能器、阵列及其形成方法。
背景技术
当前的微型压电超声换能器(Piezoelectric Micromachined Ultrasound Transducer，简称PMUT)大多基于硅基底。刚性的硅基底虽然能很好的保护器件不受到环境损坏，但是基于刚性基底的PMUT一般不易弯曲，无法简单实现弯曲皮肤成像等应用领域的需求，限制了PMUT器件向可植入、可穿戴、非侵入等方向的潜在应用。
发明内容
有鉴于此，本发明提供一种柔性微型压电超声换能器、阵列及其形成方法，该器件或阵列具有柔性基底，柔韧性佳，应用范围广。
本发明第一方面提出一种柔性微型压电超声换能器，包括：柔性基底和PMUT结构，其中：所述柔性基底的顶部具有第一空腔，所述第一空腔的深度小于或者等于所述柔性基底的厚度；所述PMUT结构位于所述柔性基底之上，所述PMUT结构至少包括下电极、压电层以及上电极。
可选地，所述PMUT结构中包括自下而上依次排列的：机械层、下电极、压电层以及上电极；所述柔性基底与所述机械层互相接触。
可选地，所述PMUT结构中包括自下而上依次排列的：下电极、压电层、上电极以及机械层；所述柔性基底与所述压电层互相接触， 所述下电极位于所述第一空腔中。
可选地，所述PMUT结构中包括自下而上依次排列的：下电极、压电层以及上电极；所述柔性基底与所述下电极互相接触。
可选地，还包括顶部封装结构，其中，还包括顶部耦合结构，其中，所述顶部耦合结构位于所述PMUT结构之上，所述顶部耦合结构包括顶部固体耦合层，或者，所述顶部耦合结构包括顶部封装结构和耦合液。
可选地，所述上电极、所述压电层以及所述第一空腔的水平截面的形状为多边形或者圆形，并且所述上电极的水平截面小于所述压电层的水平截面。
可选地，所述柔性基底的材料包括：聚酰亚胺、聚二甲基硅氧烷、涤纶树脂、聚碳酸酯、聚萘二甲酸乙二醇酯、聚醚砜、聚醚酰亚胺、聚乙烯醇或含氟聚合物。
可选地，所述压电层的材料包括：氮化铝、氧化锌、锆钛酸铅、聚偏氟乙烯、铌酸锂、石英、铌酸钾或钽酸锂。
本发明第二方面提出一种柔性微型压电超声换能器的形成方法，包括：提供牺牲基底；在所述牺牲基底之上形成PMUT结构，所述PMUT结构至少包括下电极、压电层以及上电极；去除牺牲基底；提供柔性基底，所述柔性基底的顶部具有第一空腔，所述第一空腔的深度小于或者等于所述柔性基底的厚度；通过印章转移工艺将所述PMUT结构转移到所述柔性基底之上。
可选地，所述在所述牺牲基底之上形成PMUT结构的步骤包括：在所述牺牲基底之上自下而上依次形成机械层、下电极、压电层、上 电极；所述通过印章转移工艺将所述PMUT结构转移到所述柔性基底之上的过程中，所述柔性基底与所述机械层互相接触。
可选地，所述在所述牺牲基底之上形成PMUT结构的步骤包括：在所述牺牲基底之上自下而上依次形成下电极、压电层、上电极以及机械层；所述通过印章转移工艺将所述PMUT结构转移到所述柔性基底之上的过程中，所述柔性基底与所述压电层互相接触，所述下电极位于所述第一空腔中。
可选地，所述在所述牺牲基底之上形成PMUT结构的步骤包括：在所述牺牲基底之上自下而上依次形成下电极、压电层以及上电极；所述通过印章转移工艺将所述PMUT结构转移到所述柔性基底之上的过程中，所述柔性基底与所述下电极互相接触。
可选地，还包括形成顶部耦合结构，其中，所述顶部耦合结构位于所述PUMT结构之上；所述顶部耦合结构包括顶部固体耦合层，或者，所述顶部耦合结构包括顶部封装结构和耦合液。
可选地，所述上电极、所述压电层以及所述第一空腔的水平截面的形状为多边形或者圆形，并且所述上电极的水平截面小于所述压电层的水平截面。
可选地，所述柔性基底的材料包括：聚酰亚胺、聚二甲基硅氧烷、涤纶树脂、聚碳酸酯、聚萘二甲酸乙二醇酯、聚醚砜、聚醚酰亚胺、聚乙烯醇或含氟聚合物。
可选地，所述压电层的材料包括：氮化铝、氧化锌、锆钛酸铅、聚偏氟乙烯、铌酸锂、石英、铌酸钾或钽酸锂。
本发明第三方面提出一种柔性微型压电超声换能器阵列，包括： 柔性基底，所述柔性基底的顶部具有多个第一空腔，所述第一空腔的深度小于或等于所述柔性基底的厚度；多个PMUT结构，所述多个PMUT结构位于所述柔性基底之上并且覆盖所述多个第一空腔，所述PMUT结构由上至下包括：上电极、压电层、下电极以及机械层。
可选地，所述多个PMUT结构中的机械层是连续共通的。
可选地，所述多个PMUT结构中的下电极是连续共通的。
可选地，所述多个PMUT结构彼此分立，相邻PMUT结构的间隙填充有柔性填充材料。
可选地，所述多个PMUT结构中的上电极或下电极以曲线方式连接。
本发明第四方面提出一种柔性微型压电超声换能器阵列的形成方法，包括：提供牺牲基底；在所述牺牲基底之上形成多个PMUT结构，所述PMUT结构由上至下包括：上电极、压电层、下电极以及机械层；去除牺牲基底；提供柔性基底，所述柔性基底的顶部具有多个第一空腔，所述第一空腔的深度小于或等于所述柔性基底的厚度；通过印章转移工艺将多个PMUT结构转移到所述柔性基底之上并且覆盖所述多个第一空腔。
可选地，所述多个PMUT结构中的机械层是连续共通的。
可选地，所述多个PMUT结构中的下电极是连续共通的。
可选地，所述多个PMUT结构彼此分立，相邻PMUT结构的间隙填充有柔性填充材料。
可选地，所述多个PMUT结构中的上电极或下电极以曲线方式连接。
由上可知，本发明的一种柔性微型压电超声换能器、阵列及其形成方法，该器件或阵列具有柔性基底，柔韧性佳，应用范围广的优点，对应的形成方法具有简便易行，工艺成熟的优点。
附图说明
附图用于更好地理解本发明，不构成对本发明的不当限定。其中：
图1是本发明第一实施例的柔性微型压电超声换能器结构示意图；
图2是本发明第二实施例的柔性微型压电超声换能器结构示意图；
图3是本发明第三实施例的柔性微型压电超声换能器结构示意图；
图4是本发明第四实施例的柔性微型压电超声换能器结构示意图；
图5是本发明第五实施例的柔性微型压电超声换能器结构示意图；
图6是本发明第六实施例的柔性微型压电超声换能器结构示意图；
图7a至图7d是本发明实施例的柔性微型压电超声换能器的电极层与压电层的俯视示意图；
图8a至图8g是本发明实施例的柔性微型压电超声换能器的形成方法的流程示意图；
图9为柔性微型压电超声换能器阵列的立体示意图；
图10是本发明第一实施例的柔性微型压电超声换能器阵列的结构示意图；
图11是本发明第二实施例的柔性微型压电超声换能器阵列的结构示意图；
图12是本发明第三实施例的柔性微型压电超声换能器阵列的结构示意图；
图13是本发明第四实施例的柔性微型压电超声换能器阵列的结构示意图；
图14是本发明第五实施例的柔性微型压电超声换能器阵列的结构示意图。
具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，旨在用于解释本发明，而不能理解为对本发明的限制。
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本发明中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。
在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。 而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
本发明第一方面提出一种柔性微型压电超声换能器，包括：柔性基底和PMUT结构，其中：柔性基底的顶部具有第一空腔，第一空腔的深度小于或者等于柔性基底的厚度；PMUT结构位于柔性基底之上，PMUT结构至少包括下电极、压电层以及上电极。该实施例的柔性微型压电超声换能器具有柔性基底，柔韧性佳，应用范围广。
需要说明的是，第一空腔的深度小于柔性基底的厚度时，空腔是空腔型的；第一空腔的深度等于柔性基底的厚度时，空腔是背刻型的。空腔型声波会在空腔内反射，从而影响器件性能。背刻型声波直接在下表面传入空气，不会对振动产生影响。
可选地，PMUT结构中包括自下而上依次排列的：机械层、下电极、压电层以及上电极；柔性基底与机械层互相接触。
可选地，PMUT结构中包括自下而上依次排列的：下电极、压电层、上电极以及机械层；柔性基底与压电层互相接触，下电极位于第一空腔中。
可选地，PMUT结构中包括自下而上依次排列的：下电极、压电层以及上电极；柔性基底与下电极互相接触。
可选地，柔性微型压电超声换能器还包括顶部耦合结构，该所述顶部耦合结构位于PMUT结构之上。顶部耦合结构用于增加PMUT结构与目标之间的声学传输，耦合层可以与PMUT结构上电极、压电层 相互接触。顶部耦合结构可以包括顶部固体耦合层；或者，顶部耦合结构包括顶部封装结构和耦合液。
可选地，上电极、压电层以及第一空腔的水平截面的形状为多边形或者圆形，并且上电极的水平截面小于压电层的水平截面。不同结构的振动频率，电容，阻抗等性能会有不同。
本发明第二方面提出一种柔性微型压电超声换能器的形成方法，包括：提供牺牲基底；在牺牲基底之上形成PMUT结构，PMUT结构至少包括下电极、压电层以及上电极；去除牺牲基底；提供柔性基底，柔性基底的顶部具有第一空腔，第一空腔的深度小于或者等于柔性基底的厚度；通过印章转移工艺将PMUT结构转移到柔性基底之上。
可选地，在牺牲基底之上形成PMUT结构的步骤包括：在牺牲基底之上自下而上依次形成机械层、下电极、压电层、上电极；通过印章转移工艺将PMUT结构转移到柔性基底之上的过程中，柔性基底与机械层互相接触。
可选地，在牺牲基底之上形成PMUT结构的步骤包括：在牺牲基底之上自下而上依次形成下电极、压电层、上电极以及机械层；通过印章转移工艺将PMUT结构转移到柔性基底之上的过程中，柔性基底与压电层互相接触，下电极位于第一空腔中。
可选地，在牺牲基底之上形成PMUT结构的步骤包括：在牺牲基底之上自下而上依次形成下电极、压电层以及上电极；通过印章转移工艺将PMUT结构转移到柔性基底之上的过程中，柔性基底与下电极互相接触。
可选地，还包括形成顶部耦合结构，其中，顶部耦合结构位于PUMT结构之上，顶部耦合结构包括顶部固体耦合层，或者，顶部耦合结构 包括顶部封装结构和耦合液。
可选地，上电极、压电层以及第一空腔的水平截面的形状为多边形或者圆形，并且上电极的水平截面小于压电层的水平截面。
本发明第三方面提出一种柔性微型压电超声换能器阵列，包括：柔性基底，柔性基底的顶部具有多个第一空腔，第一空腔的深度小于或等于柔性基底的厚度；多个PMUT结构，多个PMUT结构位于柔性基底之上并且覆盖多个第一空腔，PMUT结构由上至下包括：上电极、压电层、下电极以及机械层。优选地，PMUT结构与第一空腔完全对准。
可选地，多个PMUT结构中的机械层是连续共通的。这样的阵列结构比较简单，易于加工。
可选地，多个PMUT结构中的下电极是连续共通的。这样的阵列结构更加简单，更加易于加工。
可选地，多个PMUT结构彼此分立，相邻PMUT结构的间隙填充有柔性填充材料。这样的阵列的柔韧性良好，应用范围广。
可选地，多个PMUT结构中的上电极或下电极以曲线方式连接。电极曲线连接的特征保证了阵列柔韧性良好，应用广泛。
本发明第四方面提出一种柔性微型压电超声换能器阵列的形成方法，包括：提供牺牲基底；在牺牲基底之上形成多个PMUT结构，PMUT结构由上至下包括：上电极、压电层、下电极以及机械层；去除牺牲基底；提供柔性基底，柔性基底的顶部具有多个第一空腔，第一空腔的深度小于或等于柔性基底的厚度；通过印章转移工艺将多个PMUT结构转移到柔性基底之上并且覆盖多个第一空腔。优选地，PMUT结 构与第一空腔完全对准。
可选地，多个PMUT结构中的机械层是连续共通的。
可选地，多个PMUT结构中的下电极是连续共通的。
可选地，多个PMUT结构彼此分立，相邻PMUT结构的间隙填充有柔性填充材料。
可选地，多个PMUT结构中的上电极或下电极以曲线方式连接。
其中，柔性基底的材料可以为聚酰亚胺(PI)、聚二甲基硅氧烷(PDMS)、涤纶树脂(PET)、聚碳酸酯(PC)、聚萘二甲酸乙二醇酯(PEN)、聚醚砜(PES)、聚醚酰亚胺(PEI)、聚乙烯醇(PVA)、各种含氟聚合物(FEP)等构成。
其中，电极的材料可以为金(Au)、钨(W)、钼(Mo)、铂(Pt)，钌(Ru)、铱(Ir)、铝(Al)、钛(Ti)等金属以及它们的合金。
其中，压电层材料可以为氮化铝(AlN)、氧化锌(ZnO)、锆钛酸铅(PZT)、聚偏氟乙烯(PVDF)、铌酸锂(LiNbO 3)、石英(Quartz)、铌酸钾(KNbO 3)或钽酸锂(LiTaO 3)等材料以及它们的组合。
其中，机械层的材料可以为二氧化硅、硅、氮化硅、氮化铝等。
其中，牺牲基底的材料可以为硅。
其中，固体耦合层的材料可以为聚酰亚胺(PI)、聚二甲基硅氧烷(PDMS)、涤纶树脂(PET)聚碳酸酯(PC)、聚萘二甲酸乙二醇酯(PEN)、聚醚砜(PES)、聚醚酰亚胺(PEI)、聚乙烯醇(PVA)、 各种含氟聚合物(FEP)。
其中，耦合液的材料可以为氟化液、水、水性高分子凝胶、乳胶液、橡胶溶液等。
其中，顶部封装层可以为高分子聚合物材料。
为使本领域技术人员更好地理解，下面列举多个具体实施例结合说明书附图进行详细说明。图中器件的示意图视图以直线绘制，可以理解的是，作为柔性器件，其边缘并不必然地全部呈现直线，因此各图主要是为了说明器件的组成部分及各部分之间的位置、连接关系。
图1是本发明第一实施例的柔性微型压电超声换能器结构示意图。如图1所示，该柔性微型压电超声换能器的结构由上向下包括：上电极111、压电层112、下电极113、机械层114、柔性基底115。PMUT四层结构110位于空腔116上方，并且与空腔对准完全覆盖空腔。该柔性微型压电超声换能器的形成方法如下：(1)在硅基底上依次制作PMUT机械层114、下电极113、压电层112、上电极111。(2)在柔性基底115上制作一个一定横截面积与一定深度的空腔116(空腔深度小于基底高度)。(3)利用高粘附性的弹性体软印章，把PMUT四层结构110从硅基底上提起，然后再转移到柔性基底115上，同时保证PMUT结构的有效区域与柔性基底上的空腔116对准。
图2是本发明第二实施例的柔性微型压电超声换能器结构示意图。如图2所示，该柔性微型压电超声换能器的结构由上向下包括：上电极111、压电层112、下电极113、机械层114、柔性基底115。PMUT四层结构110位于空腔116上方，并且与空腔对准完全覆盖空腔。该柔性微型压电超声换能器的形成方法如下：(1)在硅基底上依次制作PMUT机械层114、下电极113、压电层112、上电极111。(2)在柔性基底115上制作一个一定横截面积与一定深度的空腔116(空腔深度 等于基底高度)。(3)利用高粘附性的弹性体软印章，把PMUT四层结构110从硅基底上提起，然后再转移到柔性基底115上，同时保证PMUT结构的有效区域与柔性基底上的空腔对准。
图3是本发明第三实施例的柔性微型压电超声换能器结构示意图。如图3所示，该柔性微型压电超声换能器的结构由上向下包括：机械层114、上电极111、压电层112、下电极113、柔性基底115。PMUT四层结构110位于空腔116上方，并且与空腔对准完全覆盖空腔。该柔性微型压电超声换能器的形成方法如下：(1)在硅基底上依次制作PMUT下电极113、压电层112、上电极111、机械层114。(2)在柔性基底115上制作一个一定横截面积与一定深度的空腔116。(3)利用高粘附性的弹性体软印章，把PMUT四层结构110从硅基底上提起，然后再转移到柔性基底115上，同时保证PMUT结构的有效区域与柔性基底上的空腔对准。
图4是本发明第四实施例的柔性微型压电超声换能器结构示意图。如图4所示，该柔性微型压电超声换能器的结构由上向下包括：上电极111、压电层112、下电极113、柔性基底115。PMUT四层结构110位于空腔116上方，并且与空腔对准完全覆盖空腔。该柔性微型压电超声换能器的形成方法如下：(1)在硅基底上依次制作PMUT下电极即机械层113、压电层112、上电极111。(2)在柔性基底115上制作一个一定横截面积与一定深度的空腔116。(3)利用高粘附性的弹性体软印章，把PMUT四层结构110从硅基底上提起，然后再转移到柔性基底115上，同时保证PMUT结构的有效区域与柔性基底上的空腔对准。
图5是本发明第五实施例的柔性微型压电超声换能器结构示意图。如图5所示，该柔性微型压电超声换能器的结构包括：上电极111、压电层112、下电极113、机械层114、柔性基底115和固体耦合层117。PMUT四层结构110位于空腔116上方。该柔性微型压电超声换能器 的形成方法如下：(1)在硅基底上依次制作PMUT机械层114、下电极113、压电层112、上电极111。(2)在柔性基底115上制作一个一定横截面积的空腔116。(3)利用高粘附性的弹性体软印章，把PMUT四层结构110从硅基底上提起，然后再转移到柔性基底115上，同时保证PMUT结构的有效区域与柔性基底上的空腔对准。(4)上方覆盖固体耦合层117。
图6是本发明第六实施例的柔性微型压电超声换能器结构示意图。如图6所示，该柔性微型压电超声换能器的结构包括：上电极111、压电层112、下电极113、机械层114、柔性基底115、耦合液118和顶部封装结构119。PMUT四层结构110位于空腔116上方。PMUT四层结构110和顶部封装结构119之间充满耦合液118。该柔性微型压电超声换能器的形成方法如下：(1)在硅基底上依次制作PMUT机械层114、下电极113、压电层112、上电极111。(2)在柔性基底115上制作一个一定横截面积的空腔116。(3)利用高粘附性的弹性体软印章，把PMUT四层结构110从硅基底上提起，然后再转移到柔性基底115上，同时保证PMUT结构的有效区域与柔性基底上的空腔对准。(4)上方覆盖带有空腔的顶部封装结构119，然后像顶部封装结构119与PMUT四层结构110之间灌满耦合液118。
图7a至图7d是本发明实施例的柔性微型压电超声换能器的电极层与压电层的俯视示意图。本发明实施例的柔性PMUT器件中，如图7a至图7d所示，上电极(111a、111b、111c和111d)与压电层(112a、112b、112c和112d)可以为多种形状(正方形、五边形、六边形等多边形，也可以是圆形)，并且上电极面积略小于压电层以达到较好的性能。
图8a至图8g是本发明实施例的柔性微型压电超声换能器的形成方法的流程示意图。该形成方法具体包括如下步骤：
图8a.首先在硅基底117上生长机械层114(机械层材料可以为二 氧化硅、氮化硅、氮化铝等)；
图8b.在机械层114表面生长下电极113(下电极材料可为钼、铝、金等)；
图8c.在底电极113表面加工压电层112(压电层材料为PZT、氮化铝、氧化锌、PVDF等)；
图8d.在压电层112表面加工上电极111(上电极材料可为钼、铝、金等)；
图8e.准备柔性基底115(柔性基底材料可为PI、PET等材料)；
图8f.在柔性基底115上制作一定面积与一定深度的空腔116，空腔形状与膜形状相同；
图8g.利用高粘附性的弹性体软印章，把PMUT四层结构110从硅基底上提起，然后再转移到柔性基底115上，同时保证PMUT结构的有效区域与柔性基底上的空腔116对准。
图9为柔性微型压电超声换能器阵列的立体示意图。图中曲面物体即柔性微型压电超声换能器阵列，上面设有多个凸起的圆点，每一个凸起的圆点表示一个压电超声换能器。
图10是本发明第一实施例的柔性微型压电超声换能器阵列的结构示意图。如图10所示，该柔性微型压电超声换能器阵列由上向下包括：上电极111、压电层112、下电极113、机械层114、柔性基底115。将PMUT四层结构110转移到柔性基底115上方，并且与空腔116对准完全覆盖空腔。该柔性微型压电超声换能器阵列的形成方法如下：(1)在硅基底上依次制作PMUT机械层114、下电极113、压电层112、上电极111。(2)在柔性基底115上制作多个一定横截面积与一定深度的空腔116(空腔深度小于基底高度)。(3)利用高粘附性的弹性体软印章，把所有PMUT四层结构110从硅基底上提起，然后再转移到柔性基底115上，同时保证每个器件的有效区域与柔性基底上的空腔116对准。
图11是本发明第二实施例的柔性微型压电超声换能器阵列的结构示意图。如图11所示，该柔性微型压电超声换能器阵列由上向下包括：上电极111、压电层112、下电极113、机械层114、柔性基底115。将PMUT四层结构110转移到柔性基底115上方，并且与空腔116对准完全覆盖空腔。PMUT阵列通过机械层114与柔性基底115连接，减少了对机械层114的处理，简化了工艺步骤，提高PMUT柔性阵列的稳定性。该柔性微型压电超声换能器阵列的形成方法如下：(1)在硅基底上依次制作PMUT机械层114、下电极113、压电层112、上电极111。(2)在柔性基底115上制作多个一定横截面积与一定深度的空腔116(空腔深度小于基底高度)。(3)利用高粘附性的弹性体软印章，把所有PMUT四层结构110从硅基底上提起，然后再转移到柔性基底115上，同时保证每个器件的有效区域与柔性基底上的空腔116对准。
图12是本发明第三实施例的柔性微型压电超声换能器阵列的结构示意图。如图12所示，该柔性微型压电超声换能器阵列由上向下包括：上电极111、压电层112、下电极113、机械层114、柔性基底115。将PMUT四层结构110转移到柔性基底上方，并且与空腔116对准完全覆盖空腔。PMUT阵列通过下电极层113、硅层114与柔性基底115连接，不需要对每个PMUT结构进行电连接，只需一个外接电路，电路处理简单，同时减少了对机械层的处理，简化了工艺步骤，提高PMUT柔性阵列的稳定性。该柔性微型压电超声换能器阵列的形成方法如下：(1)在硅基底上依次制作PMUT机械层114、下电极113、压电层112、上电极111。(2)在柔性基底115上制作多个一定横截面积与一定深度的空腔116(空腔深度小于基底高度)。(3)利用高粘附性的弹性体软印章，把所有PMUT四层结构110从硅基底上提起，然后再转移到柔性基底115上，同时保证每个器件的有效区域与柔性基底上的空腔116对准。
图13是本发明第四实施例的柔性微型压电超声换能器阵列的结构 示意图。如图13所示，该柔性微型压电超声换能器阵列由上向下包括：上电极111、压电层112、下电极113、机械层114、柔性基底115。将PMUT四层结构转移到柔性基底115上方，并且与空腔116对准完全覆盖空腔。PMUT结构通过柔性基底115连接，同时，PMUT每个结构空隙填满柔性材料115，增加阵列的弯曲性能，可以大大提高PMUT阵列的柔性。该柔性微型压电超声换能器阵列的形成方法如下：(1)在硅基底上依次制作PMUT机械层114、下电极113、压电层112、上电极111。(2)在柔性基底115上制作多个一定横截面积与一定深度的空腔116(空腔深度小于基底高度)。(3)利用高粘附性的弹性体软印章，把所有PMUT四层结构110从硅基底上提起，然后再转移到柔性基底上，同时保证每个器件的有效区域与柔性基底上的空腔116对准。
图14是本发明第五实施例的柔性微型压电超声换能器阵列的俯视示意图。该柔性微型压电超声换能器阵列由上向下包括：上电层111、压电层112、下电极113、机械层114、柔性基底115。PMUT四层结构110位于柔性基底115上方，并且与空腔116对准完全覆盖空腔。PMUT阵列通过下电极层113、支撑层114与柔性基底115连接，如图13所示，该实施例的器件阵列中电极连接结构为曲线性，这样可以增大电极柔性，减小断裂的可能性。
上述具体实施方式，并不构成对本发明保护范围的限制。本领域技术人员应该明白的是，取决于设计要求和其他因素，可以发生各种各样的修改、组合、子组合和替代。任何在本发明的精神和原则之内所作的修改、等同替换和改进等，均应包含在本发明保护范围之内。

Claims (26)

  1. 一种柔性微型压电超声换能器，其特征在于，包括：柔性基底和微型压电超声换能器(PMUT)结构，其中：
    所述柔性基底的顶部具有第一空腔，所述第一空腔的深度小于或者等于所述柔性基底的厚度；
    所述PMUT结构位于所述柔性基底之上，所述PMUT结构至少包括下电极、压电层以及上电极。
  2. 根据权利要求1所述的柔性微型压电超声换能器，其特征在于，
    所述PMUT结构中包括自下而上依次排列的：机械层、下电极、压电层以及上电极；
    所述柔性基底与所述机械层互相接触。
  3. 根据权利要求1所述的柔性微型压电超声换能器，其特征在于，
    所述PMUT结构中包括自下而上依次排列的：下电极、压电层、上电极以及机械层；
    所述柔性基底与所述压电层互相接触，所述下电极位于所述第一空腔中。
  4. 根据权利要求1所述的柔性微型压电超声换能器，其特征在于，
    所述PMUT结构中包括自下而上依次排列的：下电极、压电层以及上电极；
    所述柔性基底与所述下电极互相接触。
  5. 根据权利要求2所述的柔性微型压电超声换能器，其特征在于，还包括顶部耦合结构，其中，所述顶部耦合结构位于所述PMUT结构之上，所述顶部耦合结构包括顶部固体耦合层，或者，所述顶部耦合结构包括顶部封装结构和耦合液。
  6. 根据权利要求1所述的柔性微型压电超声换能器，其特征在于，所述上电极、所述压电层以及所述第一空腔的水平截面的形状为多边形或者圆形，并且所述上电极的水平截面小于所述压电层的水平截面。
  7. 根据权利要求1所述的柔性微型压电超声换能器，其特征在于，所述柔性基底的材料包括：聚酰亚胺、聚二甲基硅氧烷、涤纶树脂、聚碳酸酯、聚萘二甲酸乙二醇酯、聚醚砜、聚醚酰亚胺、聚乙烯醇或含氟聚合物。
  8. 根据权利要求1所述的柔性微型压电超声换能器，其特征在于，所述压电层的材料包括：氮化铝、氧化锌、锆钛酸铅、聚偏氟乙烯、铌酸锂、石英、铌酸钾或钽酸锂。
  9. 一种柔性微型压电超声换能器的形成方法，其特征在于，包括：
    提供牺牲基底；
    在所述牺牲基底之上形成PMUT结构，所述PMUT结构至少包括下电极、压电层以及上电极；
    去除牺牲基底；
    提供柔性基底，所述柔性基底的顶部具有第一空腔，所述第一空腔的深度小于或者等于所述柔性基底的厚度；
    通过印章转移工艺将所述PMUT结构转移到所述柔性基底之上。
  10. 根据权利要求9所述的柔性微型压电超声换能器的形成方法，其特征在于，
    所述在所述牺牲基底之上形成PMUT结构的步骤包括：在所述牺牲基底之上自下而上依次形成机械层、下电极、压电层、上电极；
    所述通过印章转移工艺将所述PMUT结构转移到所述柔性基底之上的过程中，所述柔性基底与所述机械层互相接触。
  11. 根据权利要求9所述的柔性微型压电超声换能器的形成方法， 其特征在于，
    所述在所述牺牲基底之上形成PMUT结构的步骤包括：在所述牺牲基底之上自下而上依次形成下电极、压电层、上电极以及机械层；
    所述通过印章转移工艺将所述PMUT结构转移到所述柔性基底之上的过程中，所述柔性基底与所述压电层互相接触，所述下电极位于所述第一空腔中。
  12. 根据权利要求9所述的柔性微型压电超声换能器的形成方法，其特征在于，
    所述在所述牺牲基底之上形成PMUT结构的步骤包括：在所述牺牲基底之上自下而上依次形成下电极、压电层以及上电极；
    所述通过印章转移工艺将所述PMUT结构转移到所述柔性基底之上的过程中，所述柔性基底与所述下电极互相接触。
  13. 根据权利要求10所述的柔性微型压电超声换能器的形成方法，其特征在于，还包括形成顶部耦合结构，其中，所述顶部耦合结构位于所述PUMT结构之上；
    所述顶部耦合结构包括顶部固体耦合层，或者，所述顶部耦合结构包括顶部封装结构和耦合液。
  14. 根据权利要求9所述的柔性微型压电超声换能器的形成方法，其特征在于，所述上电极、所述压电层以及所述第一空腔的水平截面的形状为多边形或者圆形，并且所述上电极的水平截面小于所述压电层的水平截面。
  15. 根据权利要求9所述的柔性微型压电超声换能器的形成方法，其特征在于，所述柔性基底的材料包括：聚酰亚胺、聚二甲基硅氧烷、涤纶树脂、聚碳酸酯、聚萘二甲酸乙二醇酯、聚醚砜、聚醚酰亚胺、聚乙烯醇或含氟聚合物。
  16. 根据权利要求9所述的柔性微型压电超声换能器的形成方法，其特征在于，所述压电层的材料包括：氮化铝、氧化锌、锆钛酸铅、聚偏氟乙烯、铌酸锂、石英、铌酸钾或钽酸锂。
  17. 一种柔性微型压电超声换能器阵列，其特征在于，包括：
    柔性基底，所述柔性基底的顶部具有多个第一空腔，所述第一空腔的深度小于或等于所述柔性基底的厚度；
    多个PMUT结构，所述多个PMUT结构位于所述柔性基底之上并且覆盖所述多个第一空腔，所述PMUT结构由上至下包括：上电极、压电层、下电极以及机械层。
  18. 根据权利要求17所述的柔性微型压电超声换能器阵列，其特征在于，所述多个PMUT结构中的机械层是连续共通的。
  19. 根据权利要求18所述的柔性微型压电超声换能器阵列，其特征在于，所述多个PMUT结构中的下电极是连续共通的。
  20. 根据权利要求17所述的柔性微型压电超声换能器阵列，其特征在于，所述多个PMUT结构彼此分立，相邻PMUT结构的间隙填充有柔性填充材料。
  21. 根据权利要求17所述的柔性微型压电超声换能器阵列，其特征在于，所述多个PMUT结构中的上电极或下电极以曲线方式连接。
  22. 一种柔性微型压电超声换能器阵列的形成方法，其特征在于，包括：
    提供牺牲基底；
    在所述牺牲基底之上形成多个PMUT结构，所述PMUT结构由上至下包括：上电极、压电层、下电极以及机械层；
    去除牺牲基底；
    提供柔性基底，所述柔性基底的顶部具有多个第一空腔，所述第一空腔的深度小于或等于所述柔性基底的厚度；
    通过印章转移工艺将多个PMUT结构转移到所述柔性基底之上并且覆盖所述多个第一空腔。
  23. 根据权利要求22所述的柔性微型压电超声换能器阵列的形成方法，其特征在于，所述多个PMUT结构中的机械层是连续共通的。
  24. 根据权利要求23所述的柔性微型压电超声换能器阵列的形成方法，其特征在于，所述多个PMUT结构中的下电极是连续共通的。
  25. 根据权利要求22所述的柔性微型压电超声换能器阵列的形成方法，其特征在于，所述多个PMUT结构彼此分立，相邻PMUT结构的间隙填充有柔性填充材料。
  26. 根据权利要求22所述的柔性微型压电超声换能器阵列的形成方法，其特征在于，所述多个PMUT结构中的上电极或下电极以曲线方式连接。
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