WO2020056863A1 - 光阀式掩膜板 - Google Patents

光阀式掩膜板 Download PDF

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Publication number
WO2020056863A1
WO2020056863A1 PCT/CN2018/113252 CN2018113252W WO2020056863A1 WO 2020056863 A1 WO2020056863 A1 WO 2020056863A1 CN 2018113252 W CN2018113252 W CN 2018113252W WO 2020056863 A1 WO2020056863 A1 WO 2020056863A1
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WO
WIPO (PCT)
Prior art keywords
electrode
sub
light valve
substrate
disposed
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Ceased
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PCT/CN2018/113252
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English (en)
French (fr)
Inventor
沐俊应
李相烨
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/308,870 priority Critical patent/US20210223637A1/en
Publication of WO2020056863A1 publication Critical patent/WO2020056863A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1313—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells specially adapted for a particular application
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528—Polarisers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof

Definitions

  • the present disclosure relates to a mask exposure technology, and more particularly, to a light valve type mask plate.
  • the distribution and resolution of the opening area (sub-pixels) of the existing masks used in photolithography are fixed.
  • multiple sets of masks are required, so the existing masks
  • the number of boards used is large and the pixel size and resolution cannot be adjusted.
  • the distribution and resolution of the opening area (sub-pixels) of the existing masks used in photolithography are fixed.
  • multiple sets of masks are required, so the existing masks
  • the number of boards used is large and the pixel size and resolution cannot be adjusted.
  • a light valve type mask including a first substrate, a second substrate, a first electrode, a second electrode, and a light valve medium.
  • the second substrate is disposed opposite to the first substrate.
  • the first electrode is disposed on a lower surface of the first substrate.
  • the first electrode includes at least a first sub-electrode having a transmissive property, at least a second sub-electrode having a transmissive property, and at least a third sub-electrode having no transmissive property.
  • the second electrode is disposed on an upper surface of the second substrate.
  • the second electrode is disposed opposite the first electrode.
  • the light valve medium is disposed between the first electrode and the second electrode.
  • the at least one third sub-electrode is disposed between the at least one first sub-electrode and at least one second sub-electrode.
  • An area of a first pixel formed by the at least one first sub-electrode is different from an area of a second pixel formed by the at least one second sub-electrode.
  • the size of the at least one first sub-electrode, the size of the at least one second sub-electrode, and the size of the at least one third sub-electrode are all the same.
  • the number of the at least one first sub-electrode, the number of the at least one second sub-electrode, and the number of the at least one third sub-electrode are all different.
  • a voltage is applied to the at least one first sub-electrode and the at least one second sub-electrode so that the at least one first sub-electrode and the at least one second sub-electrode have Transmissive, no voltage is applied to the at least one third sub-electrode so that the at least one third sub-electrode is not transmissive.
  • an area of a first pixel formed by the at least one first sub-electrode is larger than an area of a second pixel formed by the at least one second sub-electrode.
  • the area of the first pixel formed by the at least one first sub-electrode is twice the area of the second pixel formed by the at least one second sub-electrode.
  • the number of the at least one first sub-electrode is one
  • the number of the at least one second sub-electrode is two
  • the number of the at least one third sub-electrode is seven.
  • the second electrode is a common electrode.
  • the light valve mask further includes a first polarization device and a second polarization device, and the first polarization device is disposed on an upper surface of the first substrate.
  • a second polarizing device is disposed on a lower surface of the second substrate.
  • the present disclosure also provides a light valve type mask including a first substrate, a second substrate, a first electrode, a second electrode, and a light valve medium.
  • the second substrate is disposed opposite to the first substrate.
  • the first electrode is disposed on a lower surface of the first substrate.
  • the first electrode includes at least a first sub-electrode having a transmissive property, at least a second sub-electrode having a transmissive property, and at least a third sub-electrode having no transmissive property.
  • the second electrode is disposed on an upper surface of the second substrate.
  • the second electrode is disposed opposite the first electrode.
  • the light valve medium is disposed between the first electrode and the second electrode.
  • a voltage is applied to the at least one first sub-electrode and the at least one second sub-electrode so that the at least one first sub-electrode and the at least one second sub-electrode have Transmissive, no voltage is applied to the at least one third sub-electrode so that the at least one third sub-electrode is not transmissive.
  • the at least one third sub-electrode is disposed between the at least one first sub-electrode and at least one second sub-electrode.
  • an area of a first pixel formed by the at least one first sub-electrode is different from an area of a second pixel formed by the at least one second sub-electrode.
  • an area of a first pixel formed by the at least one first sub-electrode is larger than an area of a second pixel formed by the at least one second sub-electrode.
  • the area of the first pixel formed by the at least one first sub-electrode is twice the area of the second pixel formed by the at least one second sub-electrode.
  • the size of the at least one first sub-electrode, the size of the at least one second sub-electrode, and the size of the at least one third sub-electrode are all the same.
  • the number of the at least one first sub-electrode is one
  • the number of the at least one second sub-electrode is two
  • the number of the at least one third sub-electrode is seven.
  • the second electrode is a common electrode.
  • the light valve mask further includes a first polarization device and a second polarization device, and the first polarization device is disposed on an upper surface of the first substrate.
  • a second polarizing device is disposed on a lower surface of the second substrate.
  • the light valve mask in the embodiment of the present disclosure passes at least one first sub-electrode having transmissivity, at least one second sub-electrode having transmissivity, and
  • the at least one third sub-electrode without transmissivity can adjust the pixel size and control the resolution, and is suitable for various electronic products with different pixel designs.
  • FIG. 1 is a schematic structural diagram of a light valve mask according to an embodiment of the present disclosure.
  • FIG. 2 is a schematic structural diagram of a light valve mask according to an embodiment of the present disclosure.
  • FIG. 1 is a schematic structural diagram of a light valve mask according to an embodiment of the present disclosure.
  • the light valve mask 10 according to the embodiment of the present disclosure includes a first substrate 100, a second substrate 200, a first electrode 300, a second electrode 400, and a light valve medium 500.
  • the second substrate 200 is disposed opposite the first substrate 100.
  • the first electrode 300 is disposed on a lower surface of the first substrate 100.
  • the first electrode 300 includes at least a first sub-electrode 310 having a transmissive property, at least a second sub-electrode 320 having a transmissive property, and at least a third sub-electrode 330 having no transmissive property.
  • the second electrode 400 is disposed on the upper surface of the second substrate 200.
  • the second electrode 400 is disposed opposite the first electrode 300.
  • the light valve medium 500 is disposed between the first electrode 300 and the second electrode 400.
  • the light valve mask 10 in the embodiment of the present disclosure passes through at least one first sub-electrode 310 having transmissivity, at least one second sub-electrode 320 having transmissivity, and at least one third sub-non-transmission
  • the electrode 330 adjusts the pixel size and controls the resolution, and is suitable for various electronic products with different pixel designs.
  • the light valve medium 500 is, for example, a liquid crystal.
  • the second electrode is, for example, a common electrode.
  • a voltage may be selectively applied between the at least one first sub-electrode 310, the at least one second sub-electrode 320, and the at least one third sub-electrode 330, such as at least one first sub-electrode 310 and at least one second sub-electrode.
  • a voltage is applied to the electrode 320 to make the at least one first sub-electrode 310 and at least one second sub-electrode 320 transparent, and no voltage is applied to the at least one third sub-electrode 330 to make the at least one third sub-electrode 330 non-transmissive.
  • the at least one third sub-electrode 330 is, for example, disposed between the at least one first sub-electrode 310 and the at least one second sub-electrode 320. Therefore, the resolution can be controlled by controlling the area where the voltage is applied.
  • the area of the first pixel formed by the at least one first sub-electrode 310 is different from the area of the second pixel formed by the at least one second sub-electrode 320.
  • the area of the first pixel formed by the at least one first sub-electrode 310 is, for example, larger than the area of the second pixel formed by the at least one second sub-electrode 320.
  • the area of the first pixel formed by the at least one first sub-electrode 310 is twice the area of the second pixel formed by the at least one second sub-electrode 320.
  • the dimensions of the at least one first sub-electrode 310, the dimensions of the at least one second sub-electrode 320, and the dimensions of the at least one third sub-electrode 330 are the same, for example, the length and width of the dimensions are all 5um.
  • FIG. 2 is a schematic structural diagram of a light valve mask according to an embodiment of the present disclosure.
  • the structure and function of the light valve type mask plate 20 of the embodiment of the present disclosure are similar to the structure and function of the light valve type mask plate 10 of FIG. 1, and the main difference lies in the light valve type mask of the embodiment of the present disclosure
  • the plate 20 further includes a first polarizing device 600 and a second polarizing device 700.
  • the first polarizing device 600 is disposed on the upper surface of the first substrate 100
  • the second polarizing device 700 is disposed on the lower surface of the second substrate 200.
  • an electric field is applied between the first electrode 300 and the second electrode 400, so that the light valve medium 500 in the corresponding area changes the polarization direction of the incident light 30, the incident light 30 selectively passes through the light valve medium 500, and
  • the first polarizing device 600 and the second polarizing device 700 are used together to improve the utilization rate of the incident light 30 by the light valve mask.
  • the light valve mask 20 further includes a third substrate 800 and a thin film 900.
  • the thin film 900 is disposed on the third substrate 800.
  • the incident light 30 passes through the at least one first sub-electrode 310 and the at least one second sub-electrode 320 and reaches the thin film 900 on the third substrate 800 or the surface of the third substrate 800.
  • the light valve type mask plate 20 of the disclosed embodiment further drives a circuit (not shown) for controlling the voltages of the first electrode 300 and the second electrode 400 to control the incident light 30 of the light valve type mask plate 10. Through intensity.
  • the light valve type mask in the embodiment of the present disclosure at least one first sub-electrode having transmissivity, at least one second sub-electrode having transmissivity, and at least one non-transmissive
  • the third sub-electrode which adjusts the pixel size and controls the resolution, is suitable for various electronic products with different pixel designs.
  • the light-valve type mask in the embodiments of the present disclosure can control the applied voltage region and control the resolution, and can be applied to the field of micro masks, and the number of used mask masks is greatly reduced.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

本揭示提供一种光阀式掩膜板，其包括第一基板、第二基板、第一电极、第二电极以及光阀介质。第一电极设置于第一基板的下表面上。第一电极包括具有透射性的至少一第一子电极、具有透射性的至少一第二子电极和不具有透射性的至少一第三子电极。第二电极设置于第二基板的上表面上。光阀介质设置于第一电极与第二电极之间。

Description

光阀式掩膜板 技术领域
本揭示涉及掩膜曝光技术，特别涉及一种光阀式掩膜板。
 背景技术
用于光刻技术的现有的掩膜板的开孔区域（子像素）分布、分辨率等均固定，对应不同设计、不同分辨率的产品需要多套掩膜板，因此现有的掩膜板的使用数量较多且无法调整像素尺寸及控制分辨率。
故，有需要提供一种光阀式掩膜板，以解决现有技术存在的问题，能调整像素尺寸及控制分辨率，适用于各种具有不同像素设计的电子产品。
 技术问题
用于光刻技术的现有的掩膜板的开孔区域（子像素）分布、分辨率等均固定，对应不同设计、不同分辨率的产品需要多套掩膜板，因此现有的掩膜板的使用数量较多且无法调整像素尺寸及控制分辨率。
 技术解决方案
为解决上述技术问题，本揭示提供一光阀式掩膜板包括第一基板、第二基板、第一电极、第二电极以及光阀介质。所述第二基板与所述第一基板相对设置。所述第一电极设置于所述第一基板的下表面上。所述第一电极包括具有透射性的至少一第一子电极、具有透射性的至少一第二子电极和不具有透射性的至少一第三子电极。所述第二电极设置于所述第二基板的上表面上。所述第二电极与所述第一电极相对设置。所述光阀介质设置于所述第一电极与所述第二电极之间。所述至少一第三子电极设置于所述至少一第一子电极和至少一第二子电极之间。所述至少一第一子电极构成的第一像素的面积与所述至少一第二子电极构成的第二像素的面积不同。所述至少一第一子电极的尺寸、所述至少一第二子电极的尺寸和所述至少一第三子电极的尺寸均相同。所述至少一第一子电极的数量、所述至少一第二子电极的数量、所述至少一第三子电极的数量均不相同。
于本揭示其中的一实施例中，对所述至少一第一子电极和所述至少一第二子电极施加电压以使所述至少一第一子电极和所述至少一第二子电极具有透射性，对所述至少一第三子电极不施加电压以使所述至少一第三子电极不具有透射性。
于本揭示其中的一实施例中，所述至少一第一子电极构成的第一像素的面积大于所述至少一第二子电极构成的第二像素的面积。
于本揭示其中的一实施例中，所述至少一第一子电极构成的第一像素的面积是所述至少一第二子电极构成的第二像素的面积的2倍。
于本揭示其中的一实施例中，所述至少一第一子电极的数量为一个，所述至少一第二子电极的数量为二个，所述至少一第三子电极的数量为七个。
于本揭示其中的一实施例中，所述第二电极为公共电极。
于本揭示其中的一实施例中，所述光阀式掩膜板还包括第一偏振器件和第二偏振器件，所述第一偏振器件设置于所述第一基板的上表面上，所述第二偏振器件设置于所述第二基板的下表面上。
本揭示还提供一光阀式掩膜板包括第一基板、第二基板、第一电极、第二电极以及光阀介质。所述第二基板与所述第一基板相对设置。所述第一电极设置于所述第一基板的下表面上。所述第一电极包括具有透射性的至少一第一子电极、具有透射性的至少一第二子电极和不具有透射性的至少一第三子电极。所述第二电极设置于所述第二基板的上表面上。所述第二电极与所述第一电极相对设置。所述光阀介质设置于所述第一电极与所述第二电极之间。
于本揭示其中的一实施例中，对所述至少一第一子电极和所述至少一第二子电极施加电压以使所述至少一第一子电极和所述至少一第二子电极具有透射性，对所述至少一第三子电极不施加电压以使所述至少一第三子电极不具有透射性。
于本揭示其中的一实施例中，所述至少一第三子电极设置于所述至少一第一子电极和至少一第二子电极之间。
于本揭示其中的一实施例中，所述至少一第一子电极构成的第一像素的面积与所述至少一第二子电极构成的第二像素的面积不同。
于本揭示其中的一实施例中，所述至少一第一子电极构成的第一像素的面积大于所述至少一第二子电极构成的第二像素的面积。
于本揭示其中的一实施例中，所述至少一第一子电极构成的第一像素的面积是所述至少一第二子电极构成的第二像素的面积的2倍。
于本揭示其中的一实施例中，所述至少一第一子电极的尺寸、所述至少一第二子电极的尺寸和所述至少一第三子电极的尺寸均相同。
于本揭示其中的一实施例中，所述至少一第一子电极的数量为一个，所述至少一第二子电极的数量为二个，所述至少一第三子电极的数量为七个。
于本揭示其中的一实施例中，所述第二电极为公共电极。
于本揭示其中的一实施例中，所述光阀式掩膜板还包括第一偏振器件和第二偏振器件，所述第一偏振器件设置于所述第一基板的上表面上，所述第二偏振器件设置于所述第二基板的下表面上。
 有益效果
相较于现有技术，为解决上述技术问题，本揭示的实施例中的光阀式掩膜板，通过具有透射性的至少一第一子电极、具有透射性的至少一第二子电极和不具有透射性的至少一第三子电极，调整像素尺寸及控制分辨率，适用于各种具有不同像素设计的电子产品。
 附图说明
图1显示根据本揭示的一实施例的光阀式掩膜板的结构示意图；以及
图2显示根据本揭示的一实施例的光阀式掩膜板的结构示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本揭示可用以实施的特定实施例。
为了让本揭示的上述及其他目的、特征、优点能更明显易懂，下文将特举本揭示优选实施例，并配合所附图式，作详细说明如下。再者，本揭示所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧层、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。
在图中，结构相似的单元是以相同标号表示。
参照图1，图1显示根据本揭示的一实施例的光阀式掩膜板的结构示意图。如图1所示，本揭示的实施例的光阀式掩膜板10包括第一基板100、第二基板200、第一电极300、第二电极400以及光阀介质500。第二基板200与第一基板100相对设置。第一电极300设置于第一基板100的下表面上。第一电极300包括具有透射性的至少一第一子电极310、具有透射性的至少一第二子电极320和不具有透射性的至少一第三子电极330。第二电极400设置于第二基板200的上表面上。第二电极400与第一电极300相对设置。光阀介质500设置于第一电极300与第二电极400之间。本揭示的实施例中的光阀式掩膜板10，通过具有透射性的至少一第一子电极310、具有透射性的至少一第二子电极320和不具有透射性的至少一第三子电极330，调整像素尺寸及控制分辨率，适用于各种具有不同像素设计的电子产品。
具体地，在第一电极300和第二电极400之间施加电场，使得相应区域的光阀介质500对入射光30发生偏振方向的改变，入射光30选择性透过光阀介质500。光阀介质500例如为液晶。第二电极例如为公共电极。
具体地，可在至少一第一子电极310，至少一第二子电极320，至少一第三子电极330之间选择性施加电压，例如对至少一第一子电极310和至少一第二子电极320施加电压以使至少一第一子电极310和至少一第二子电极320具有透射性，对至少一第三子电极330不施加电压以使至少一第三子电极330不具有透射性。至少一第三子电极330例如设置于至少一第一子电极310和至少一第二子电极320之间。因此可通过控制施加电压的区域，控制分辨率。
于本揭示其中的一实施例中，至少一第一子电极310构成的第一像素的面积与至少一第二子电极320构成的第二像素的面积不同。至少一第一子电极310构成的第一像素的面积例如大于至少一第二子电极320构成的第二像素的面积。具体地，至少一第一子电极310构成的第一像素的面积是至少一第二子电极320构成的第二像素的面积的2倍。至少一第一子电极310的尺寸、至少一第二子电极320的尺寸和至少一第三子电极330的尺寸均相同，例如其尺寸的长度及宽度均为5um。
参照图2，图2显示根据本揭示的一实施例的光阀式掩膜板的结构示意图。本揭示的实施例的光阀式掩膜板20的结构及作用方式与图1的光阀式掩膜板10的结构及作用方式相似，主要差异在于本揭示的实施例的光阀式掩膜板20还包括第一偏振器件600和第二偏振器件700。第一偏振器件600设置于第一基板100的上表面上，第二偏振器件700设置于第二基板200的下表面上。具体地，在第一电极300和第二电极400之间施加电场，使得相应区域的光阀介质500对入射光30发生偏振方向的改变，入射光30选择性透过光阀介质500，并在第一偏振器件600和第二偏振器件700的共同作用下，用于提高光阀式掩膜板对入射光30的利用率。
另外，本揭示的实施例的光阀式掩膜板20还包括第三基板800和薄膜900。薄膜900设置于第三基板800上。入射光30通过至少一第一子电极310和至少一第二子电极320，到达第三基板800上的薄膜900或第三基板800的表面。本揭示的实施例的光阀式掩膜板20还驱动电路(未图示)，用于控制第一电极300和第二电极400的电压，以控制光阀式掩膜板10的入射光30通过强度。
综上所述，由于本揭示的实施例中的光阀式掩膜板，通过具有透射性的至少一第一子电极、具有透射性的至少一第二子电极和不具有透射性的至少一第三子电极，调整像素尺寸及控制分辨率，适用于各种具有不同像素设计的电子产品。本揭示的实施例中的光阀式掩膜板能可通过控制施加电压的区域，控制分辨率，能应用在微型掩膜板领域，且比传统涂层式掩膜板的使用数量大幅降低。
尽管已经相对于一个或多个实现方式示出并描述了本揭示，但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。本揭示包括所有这样的修改和变型，并且仅由所附权利要求的范围限制。特别地关于由上述组件执行的各种功能，用于描述这样的组件的术语旨在对应于执行所述组件的指定功能（例如其在功能上是等价的）的任意组件（除非另外指示），即使在结构上与执行本文所示的本说明书的示范性实现方式中的功能的公开结构不等同。此外，尽管本说明书的特定特征已经相对于若干实现方式中的仅一个被公开，但是这种特征可以与如可以对给定或特定应用而言是期望和有利的其他实现方式的一个或多个其他特征组合。而且，就术语“包括”、“具有”、“含有”或其变形被用在具体实施方式或权利要求中而言，这样的术语旨在以与术语“包含”相似的方式包括。
以上仅是本揭示的优选实施方式，应当指出，对于本领域普通技术人员，在不脱离本揭示原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本揭示的保护范围。

Claims (17)

  1. 一种光阀式掩膜板，包括：
    第一基板；
    第二基板，与所述第一基板相对设置；
    第一电极，设置于所述第一基板的下表面上，所述第一电极包括具有透射性的至少一第一子电极、具有透射性的至少一第二子电极和不具有透射性的至少一第三子电极；
    第二电极，设置于所述第二基板的上表面上，所述第二电极与所述第一电极相对设置；以及
    光阀介质，设置于所述第一电极与所述第二电极之间；
    其中所述至少一第三子电极设置于所述至少一第一子电极和至少一第二子电极之间；
    其中所述至少一第一子电极构成的第一像素的面积与所述至少一第二子电极构成的第二像素的面积不同；
    其中所述至少一第一子电极的尺寸、所述至少一第二子电极的尺寸和所述至少一第三子电极的尺寸均相同；
    其中所述至少一第一子电极的数量、所述至少一第二子电极的数量、所述至少一第三子电极的数量均不相同。
  2. 根据权利要求1所述的光阀式掩膜板，其中对所述至少一第一子电极和所述至少一第二子电极施加电压以使所述至少一第一子电极和所述至少一第二子电极具有透射性，对所述至少一第三子电极不施加电压以使所述至少一第三子电极不具有透射性。
  3. 根据权利要求1所述的光阀式掩膜板，其中所述至少一第一子电极构成的第一像素的面积大于所述至少一第二子电极构成的第二像素的面积。
  4. 根据权利要求3所述的光阀式掩膜板，其中所述至少一第一子电极构成的第一像素的面积是所述至少一第二子电极构成的第二像素的面积的2倍。
  5. 根据权利要求1所述的光阀式掩膜板，其中所述至少一第一子电极的数量为一个，所述至少一第二子电极的数量为二个，所述至少一第三子电极的数量为七个。
  6. 根据权利要求1所述的光阀式掩膜板，其中所述第二电极为公共电极。
  7. 根据权利要求1所述的光阀式掩膜板，其中所述光阀式掩膜板还包括第一偏振器件和第二偏振器件，所述第一偏振器件设置于所述第一基板的上表面上，所述第二偏振器件设置于所述第二基板的下表面上。
  8. 一种光阀式掩膜板，包括：
    第一基板；
    第二基板，与所述第一基板相对设置；
    第一电极，设置于所述第一基板的下表面上，所述第一电极包括具有透射性的至少一第一子电极、具有透射性的至少一第二子电极和不具有透射性的至少一第三子电极；
    第二电极，设置于所述第二基板的上表面上，所述第二电极与所述第一电极相对设置；以及
    光阀介质，设置于所述第一电极与所述第二电极之间。
  9. 根据权利要求8所述的光阀式掩膜板，其中对所述至少一第一子电极和所述至少一第二子电极施加电压以使所述至少一第一子电极和所述至少一第二子电极具有透射性，对所述至少一第三子电极不施加电压以使所述至少一第三子电极不具有透射性。
  10.     根据权利要求8所述的光阀式掩膜板，其中所述至少一第三子电极设置于所述至少一第一子电极和至少一第二子电极之间。
  11.      根据权利要求8所述的光阀式掩膜板，其中所述至少一第一子电极构成的第一像素的面积与所述至少一第二子电极构成的第二像素的面积不同。
  12.     根据权利要求11所述的光阀式掩膜板，其中所述至少一第一子电极构成的第一像素的面积大于所述至少一第二子电极构成的第二像素的面积。
  13.     根据权利要求12所述的光阀式掩膜板，其中所述至少一第一子电极构成的第一像素的面积是所述至少一第二子电极构成的第二像素的面积的2倍。
  14.     根据权利要求8所述的光阀式掩膜板，其中所述至少一第一子电极的尺寸、所述至少一第二子电极的尺寸和所述至少一第三子电极的尺寸均相同。
  15.     根据权利要求8所述的光阀式掩膜板，其中所述至少一第一子电极的数量为一个，所述至少一第二子电极的数量为二个，所述至少一第三子电极的数量为七个。
  16.     根据权利要求8所述的光阀式掩膜板，其中所述第二电极为公共电极。
  17.     根据权利要求8所述的光阀式掩膜板，其中所述光阀式掩膜板还包括第一偏振器件和第二偏振器件，所述第一偏振器件设置于所述第一基板的上表面上，所述第二偏振器件设置于所述第二基板的下表面上。
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