WO2020054608A1 - Appareil de traitement par micro-ondes - Google Patents

Appareil de traitement par micro-ondes Download PDF

Info

Publication number
WO2020054608A1
WO2020054608A1 PCT/JP2019/035168 JP2019035168W WO2020054608A1 WO 2020054608 A1 WO2020054608 A1 WO 2020054608A1 JP 2019035168 W JP2019035168 W JP 2019035168W WO 2020054608 A1 WO2020054608 A1 WO 2020054608A1
Authority
WO
WIPO (PCT)
Prior art keywords
microwave
resonance
patch
processing chamber
resonators
Prior art date
Application number
PCT/JP2019/035168
Other languages
English (en)
Japanese (ja)
Inventor
吉野　浩二
昌之 久保
橋本　修
良介 須賀
Original Assignee
パナソニック株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by パナソニック株式会社 filed Critical パナソニック株式会社
Priority to EP19860278.1A priority Critical patent/EP3852496A4/fr
Priority to CN201980003759.6A priority patent/CN111183708B/zh
Priority to JP2019569855A priority patent/JP7380221B2/ja
Publication of WO2020054608A1 publication Critical patent/WO2020054608A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/70—Feed lines

Definitions

  • the present disclosure relates to a microwave processing device.
  • a microwave oven which is a typical example of a microwave processing apparatus, supplies microwaves radiated by a magnetron into a processing chamber surrounded by a metal wall, and dielectrically heats an object to be heated such as food placed in the processing chamber. .
  • Microwaves are repeatedly reflected on the walls of the processing chamber.
  • the phase of the reflected wave reflected by the metal wall changes by 180 degrees with respect to the wave incident on the metal wall.
  • a line perpendicular to the metal wall surface is a reference line
  • the angle of incidence which is the angle between the reference line and the incident wave
  • the angle of reflection which is the angle between the reflected wave and the reference line.
  • the size of the processing chamber is usually sufficiently larger than the wavelength of the microwave (about 120 mm). Therefore, a standing wave is generated in the processing chamber due to the behavior of the incident wave and the reflected wave generated on the metal wall surface.
  • a standing wave has antinodes that always appear where the electric field is strong and nodes that always appear where the electric field is weak.
  • the object to be heated When the object to be heated is placed at the place where the antinode of the standing wave appears, the object to be heated is strongly heated. When the object to be heated is placed at the place where the node of the standing wave appears, the object to be heated becomes Not very heated. This is the main cause of uneven heating in a microwave oven.
  • Methods for suppressing such uneven heating due to standing waves and promoting uniform heating include a turntable method in which a table is rotated to rotate an object to be heated, and a rotation method in which an antenna that radiates microwaves is rotated. There is an antenna system.
  • Non-Patent Document 1 There is also a technique for actively using local heating, which is opposite to uniform heating (for example, see Non-Patent Document 1).
  • the device described in Non-Patent Document 1 includes a plurality of microwave generators configured by GaN semiconductor elements, and supplies the output of the microwave generator from various places to a processing chamber. By providing a phase difference between the two supplied microwaves, local heating is achieved by concentrating the microwaves on the object to be heated.
  • the present disclosure aims to provide a microwave processing apparatus capable of heating each of a plurality of objects to be heated as desired by controlling the distribution of standing waves in a processing chamber.
  • a microwave processing apparatus includes a processing chamber that stores an object to be heated, a microwave supply unit that supplies a microwave to the processing chamber, and a resonance unit that has a resonance frequency in a microwave frequency band.
  • the resonance section has a plurality of patch resonators arranged such that at least three patch resonators are arranged along a direction of a polarization plane generated on a metal wall surface forming the processing chamber.
  • the microwave processing apparatus of the present embodiment can control the standing wave distribution in the processing chamber, that is, the microwave energy distribution. As a result, for example, when simultaneously heating a plurality of objects to be heated, the microwave processing apparatus of the present embodiment can adjust the microwave energy absorbed by each of the objects to be heated.
  • FIG. 1 is a perspective view illustrating a configuration of the microwave processing apparatus according to Embodiment 1 of the present disclosure.
  • FIG. 2 is a plan view showing a configuration of the resonance unit according to the first embodiment.
  • FIG. 3A is a diagram illustrating a frequency characteristic of a reflection phase generated by the resonance unit.
  • FIG. 3B is a diagram illustrating a frequency characteristic of a reflection phase generated by the resonance unit.
  • FIG. 4A is a perspective view of the waveguide for describing an electric field generated in the waveguide.
  • FIG. 4B is a cross-sectional view of the waveguide for describing an electric field generated in the waveguide.
  • FIG. 4C is a perspective view of the waveguide for explaining an electric field radiated from the waveguide aperture.
  • FIG. 5 is a diagram illustrating the characteristics of the electric field in the processing chamber and the current vector on the patch surface.
  • FIG. 6A is a diagram for explaining the reason for arranging three rectangular patch resonators.
  • FIG. 6B is a diagram for explaining the reason why three rectangular patch resonators are arranged.
  • FIG. 6C is a diagram for explaining the reason for arranging three rectangular patch resonators.
  • FIG. 7 is a cross-sectional view of the microwave processing apparatus according to the first embodiment in a state where two objects to be heated are accommodated.
  • FIG. 8A is a diagram illustrating an electric field distribution in a processing chamber when a resonance unit is not provided.
  • FIG. 8B is a diagram illustrating an electric field distribution in the processing chamber when the resonance unit is provided.
  • FIG. 8A is a diagram illustrating an electric field distribution in a processing chamber when a resonance unit is not provided.
  • FIG. 9 is a plan view illustrating a configuration of a resonance unit according to Embodiment 2 of the present disclosure.
  • FIG. 10A is a diagram illustrating an example of an arrangement of a resonance unit and a power supply unit on a metal wall surface of a processing chamber.
  • FIG. 10B is a diagram illustrating another example of the arrangement of the resonance unit and the power supply unit on the metal wall surface of the processing chamber.
  • FIG. 11 is a plan view illustrating a configuration of a resonance section according to Embodiment 3 of the present disclosure.
  • FIG. 12A is a cross-sectional view illustrating a configuration of a microwave processing apparatus according to Embodiment 3.
  • FIG. 12B is a cross-sectional view taken along line 12B-12B of FIG. 12A.
  • FIG. 13A is a longitudinal sectional view showing another configuration of the microwave processing apparatus according to Embodiment 3.
  • FIG. 13B is a cross-sectional view taken along line 13B-13B of FIG. 13A.
  • FIG. 14 is a perspective view illustrating a configuration of a microwave processing apparatus according to Embodiment 4 of the present disclosure.
  • FIG. 15 is a diagram illustrating characteristics of the resonance unit illustrated in FIG. 14.
  • FIG. 16 is a cross-sectional view illustrating a configuration of a microwave processing apparatus according to Embodiment 5 of the present disclosure.
  • a microwave processing apparatus includes a processing chamber that stores an object to be heated, a microwave supply unit that supplies a microwave to the processing chamber, and a resonance unit that has a resonance frequency in a microwave frequency band.
  • the resonance section has a plurality of patch resonators arranged such that at least three patch resonators are arranged along a direction of a polarization plane generated on a metal wall surface forming the processing chamber.
  • the plurality of patch resonators are arranged such that at least three patch resonators are arranged in each of a vertical direction and a horizontal direction. Is done.
  • the plurality of patch resonators include at least five rectangular patch resonators arranged in a cross shape.
  • the plurality of patch resonators include at least three patch resonators in each of a vertical direction, a horizontal direction, and an oblique direction. Are arranged radially.
  • the patch resonator is a circular patch resonator.
  • the microwave supply unit includes a microwave generation unit, and a control unit that controls an oscillation frequency of the microwave generation unit.
  • the resonance section has a plurality of resonance sections having different resonance frequencies.
  • the control unit switches the resonance unit that resonates among the plurality of resonance units by controlling the oscillation frequency.
  • the resonance unit has a plurality of resonance units.
  • Each of the plurality of resonance units is provided in each of a plurality of divided regions on one metal wall surface forming the processing chamber.
  • the plurality of resonance units have different resonance frequencies.
  • each of the plurality of resonance units has a resonance frequency according to the order of arrangement of the plurality of resonance units.
  • each of the plurality of resonance units has a conductor having a length corresponding to the order of arrangement of the plurality of resonance units.
  • the microwave processing device of the present embodiment is a microwave oven.
  • the microwave processing apparatus according to the present disclosure is not limited to a microwave oven, but includes a heat processing apparatus using dielectric heating, a chemical reaction processing apparatus, a semiconductor manufacturing apparatus, and the like.
  • FIG. 1 is a perspective view of a microwave processing apparatus 100 according to the present embodiment.
  • the microwave processing apparatus 100 includes a processing chamber 101 surrounded by a metal wall, and a microwave supply unit 160 that supplies a microwave to the processing chamber 101.
  • the microwave supply unit 160 includes the waveguide 102, the power supply unit 103, the microwave generation unit 104, and the control unit 105.
  • the waveguide 102 has a rectangular cross section and transmits microwaves in the TE10 mode.
  • the power supply unit 103 is a waveguide opening formed at a connection portion between the waveguide 102 and the processing chamber 101.
  • the center of the waveguide opening is located at the intersection of the center line L1 in the left-right direction and the center line L2 in the front-rear direction of the processing chamber 101 in FIG.
  • the waveguide opening has a rectangular shape whose two sides are parallel to the center lines L1 and L2.
  • the control unit 105 receives the information on the heat treatment, and controls the microwave generation unit 104 so as to generate an output and a power of a frequency corresponding to the information.
  • the resonance unit 106 is disposed on the ceiling surface facing the power supply unit 103.
  • FIG. 2 is a plan view illustrating the configuration of the resonance unit 106. As shown in FIG. 2, the resonance unit 106 includes three rectangular patch resonators 106a arranged in a 3 ⁇ 1 matrix.
  • the square patch resonator 106a has a dielectric 106b and a square conductor 106c.
  • the square patch resonator 106a has a resonance frequency between 2.4 GHz and 2.5 GHz, which is a frequency band of microwaves generated by the microwave generation unit 104.
  • FIGS. 3A and 3B are diagrams showing frequency characteristics of the reflection phase generated by the rectangular patch resonator.
  • the vertical axis in FIG. 3A represents the reflection phase
  • the vertical axis in FIG. 3B represents the absolute value of the reflection phase.
  • the phase of the reflection coefficient when viewed from the side of the rectangular conductor 106c of the rectangular patch resonator 106a (hereinafter referred to as the reflection phase) is approximately +180 in a frequency band of 2.4 GHz to 2.5 GHz. Degrees to about -180 degrees.
  • the resonance frequency of the rectangular patch resonator 106a is set to 2.45 GHz.
  • FIG. 3B shows the vertical axis of FIG. 3A as an absolute value. As shown in FIG. 3B, the reflection phase is 180 degrees at most frequencies, but falls to 0 degrees near 2.45 GHz. When the length of the rectangular conductor 106c is set to about half the wavelength of the current flowing through the rectangular conductor 106c, resonance occurs.
  • the microwave wavelength of 2.45 GHz used in a general microwave oven is about 120 mm in air having a dielectric constant of 1. Therefore, when the dielectric 106b has a relative dielectric constant close to 1, for example, styrene foam, the length of the square conductor 106c may be set to about 60 mm. Even when the length of the square conductor 106c is, for example, 53 mm, resonance occurs.
  • the relative permittivity is larger than 1 (about 2 to 5), and when the relative permittivity is high, the wavelength of the microwave tends to be short. For this reason, the square conductor 106c can be shortened.
  • the surface of the resonance portion 106 opposite to the patch surface having the rectangular conductor 106 c has the same potential as the metal wall surface of the processing chamber 101.
  • FIGS. 4A to 4C are diagrams for explaining the electric field generated in the waveguide.
  • FIG. 4A is a perspective view of a waveguide.
  • FIG. 4B is a cross-sectional view of the waveguide viewed from the front of the opening.
  • FIG. 4C is a diagram for explaining an electric field radiated from the waveguide opening.
  • the microwave is transmitted by the waveguide 102 in the positive direction of the Z axis shown in FIG.
  • the width a of the waveguide 102 is set between half the wavelength ⁇ of the microwave and the wavelength ⁇ of the microwave, and the height b of the waveguide 102 is set to half the wavelength ⁇ of the microwave.
  • the waveguide 102 transmits microwaves in the TE10 mode.
  • an electric field represented by an arrow E1 is generated in the height direction, and a magnetic field represented by an arrow H1 is generated in the width direction.
  • the electric field becomes maximum at the center in the width direction in the waveguide 102 and becomes zero at both ends in the waveguide 102. For this reason, the electric field intensity distribution is shown as a broken line E2.
  • an electric field is radiated from the power supply unit 103 in the positive direction of the Z axis.
  • the vector component of this electric field oscillates only in the Y direction (that is, the height direction of the waveguide) like the arrow E1, and is transmitted in the Z direction with time. Therefore, the electric field is transmitted as indicated by a broken line E3.
  • the electric field vector mainly oscillates only in the Y direction.
  • the vibration direction of this electric field vector is called polarization, and the plane formed by the vibration direction and the transmission direction (in this case, the YZ plane) is called the polarization plane.
  • the plane of polarization is a plane (YZ plane) formed in the height direction (Y direction) and the transmission direction (Z direction) of the waveguide.
  • the microwave radiated from the waveguide 102 to the processing chamber 101 via the power supply unit 103 has a vibration direction (the direction of the dashed line L1 in FIG. 1) and a transmission direction (the upward direction in FIG. 1). ) And a polarization plane indicated by a broken line E4.
  • the microwave is absorbed by the object to be heated in the processing chamber 101 while being repeatedly reflected on the metal wall surface.
  • the electric field component in the processing chamber 101 mainly occurs in a direction parallel to the plane of polarization, and hardly occurs in other directions (for example, the L2 direction component in FIG. 1).
  • the resonance units 106 are arranged such that the three rectangular patch resonators 106a are arranged along the polarization plane indicated by the broken line E4.
  • FIG. 5 is a diagram showing the characteristics of the electric field in the processing chamber 101 and the current vector on the patch surface of the rectangular patch resonator 106a when the number and position of the rectangular patch resonator 106a are changed.
  • FIG. 5 describes, in order from the top, the analysis model, the electric field on the observation plane O1, the electric field on the observation plane O2, and the current vector on the patch plane of the rectangular patch resonator 106a.
  • the analysis model shown in the upper part of FIG. 5 has a configuration in which the waveguide 102 is connected to the processing chamber 101 as in FIG. However, this analysis model is upside down from the case of FIG.
  • the observation surface O1 is a cross section at the center in the front-rear direction of the processing chamber 101, that is, a cross section taken along the dashed line L2 in FIG. 1, and is orthogonal to the polarization plane indicated by the broken line E4 in FIG.
  • the observation plane O2 is located to the left of the processing chamber 101, is orthogonal to the observation plane O1, and is parallel to the one-dot chain line L1 in FIG. 1 and the polarization plane indicated by the broken line E4.
  • the electric field on the observation plane O1 and the electric field on the observation plane O2 are shown by isoelectric field intensity diagrams.
  • 5 shows current vectors on the patch surface of the rectangular patch resonator 106a. Since the position of the rectangular patch resonator 106a differs depending on the analysis model, the current vector on the patch surface is described at a position (back, center, front) corresponding to the arrangement of the rectangular patch resonator 106a. The isosceles triangle in the figure indicates the direction of the current vector.
  • analysis A the rectangular patch resonator 106a is not used.
  • analysis B one rectangular patch resonator 106a is arranged at the center in the front-rear direction.
  • analysis C two rectangular patch resonators 106a are arranged one at the back and one at the front.
  • analysis D three rectangular patch resonators 106a are arranged at the back, center, and front.
  • a plane passing through the position 111 on the observation plane O1 and orthogonal to the observation plane O1 is set as the observation plane O2.
  • an antinode of a standing wave is generated at a position 112 where the observation plane O1 and the observation plane O2 intersect.
  • the electric field distribution is symmetrical in both the observation plane O1 and the observation plane O2.
  • the electric field at the position 111 is strong, the electric field at the positions 113 and 114 is weak, and the electric field at the position 112 is about halfway between the electric fields at the positions 111 and 113.
  • the electric field at positions 111 and 112 is weak.
  • a node of the standing wave is generated at the position 112 of the observation surface O2.
  • the left-right symmetry of the electric field on the observation plane O1 is broken.
  • one rectangular patch resonator 106a is arranged at the center in the front-rear direction of the observation plane O2. That is, in the analysis B, one rectangular patch resonator 106a is arranged at the position of the antinode of the standing wave in the analysis A.
  • the result of the analysis B indicates that the rectangular patch resonator 106a arranged at the position of the antinode of the standing wave has changed the antinode of the standing wave into a node.
  • the reflection phase of the rectangular patch resonator 106a for the frequency of 2.45 GHz is approximately 0 degrees. This means that the phase difference between the incident wave on the patch surface and the reflected wave from the patch surface is approximately 0 degrees. Considering that the phase difference between the incident wave and the reflected wave on the normal metal wall surface is 180 degrees, it can be seen that a standing wave distribution different from the normal was formed near the resonance section 106.
  • the reflection phase is approximately 0 degrees, the impedance becomes infinite. Therefore, the high-frequency current flowing through the patch surface is suppressed, and the microwave moves away from the resonance unit 106. This is the cause of the weakening of the electric field near the resonance section 106. It is estimated that the left-right symmetry of the observation plane O1 is lost due to this influence. This effect is called a first effect.
  • analysis C the electric field at position 111 and position 112 is strong as in analysis A.
  • the electric field is weak at positions 113 and 114 where the rectangular patch resonator 106a is arranged.
  • standing wave nodes occur at the positions 113 and 114. That is, the result of the analysis C indicates that the rectangular patch resonator 106a arranged at the node of the standing wave having a weak electric field does not significantly affect the standing wave distribution.
  • analysis D the electric field at positions 111 and 112 is weak, and a strong electric field is generated in region 115.
  • the left-right symmetry of the observation plane O1 is broken.
  • the results of analysis D seem to indicate that the effects of analysis B and analysis C were combined.
  • a strong electric field is generated in the region 115. This is a unique effect of the arrangement of the three rectangular patch resonators 106a.
  • FIGS. 6A to 6C are diagrams for explaining the reason why three rectangular patch resonators 106a are arranged.
  • FIG. 6A is a diagram for explaining an electric field when two rectangular patch resonators are separated from each other and arranged in a strong electric field.
  • FIG. 6B is a diagram for explaining an opposite electric field generated when three rectangular patch resonators are arranged.
  • FIG. 6C is a diagram for explaining that a strong electric field becomes a weak electric field in FIG. 6B.
  • the two rectangular patch resonators 106a in FIG. 6A correspond to the two rectangular patch resonators 106a shown in the analysis B in FIG.
  • the strong electric field 119 causes current vectors 116 and 117 in the same direction, and electric fields 120 and 121 in opposite directions are generated between the two rectangular patch resonators 106a.
  • the induced electric fields 122 and 123 generate a current vector 118 in the opposite direction in the centrally arranged rectangular patch resonator 106a. This creates an opposite electric field 124 that counteracts the strong electric field 119. As a result, a strong electric field can be weakened by the opposite electric fields generated by the three rectangular patch resonators 106a.
  • the current vectors 118 generated in the square patch resonator 106a arranged at the center are opposite to the current vectors 116 and 117 generated in the square patch resonators 106a arranged at the back and front, respectively. It is. This result is consistent with the analysis D in FIG. This effect is called a second effect.
  • the second effect is considered to be another effect different from the first effect due to the arrangement of the three rectangular patch resonators 106a.
  • the analysis B of FIG. 5 shows only the first effect that one rectangular patch resonator 106a arranged at the position of the antinode of the standing wave weakens the electric field.
  • Analysis D of FIG. 5 shows that the second effect of the three rectangular patch resonators 106a weakening the electric field is added to the first effect.
  • the analysis D has an effect of further weakening the electric field in the vicinity of the rectangular patch resonator 106a as compared with the analysis B.
  • the electric field at a location distant from the rectangular patch resonator 106a was relatively increased, and a strong electric field was generated in the region 115.
  • the second effect is that the electric field is weakened when the rectangular patch resonator 106a is arranged at the antinode of the standing wave, while the standing wave is reduced even when the rectangular patch resonator 106a is arranged at the node of the standing wave. Does not change.
  • FIG. 7 is a cross-sectional view of the microwave processing apparatus 100 in a state where two objects to be heated are accommodated.
  • the processing chamber 101 has a mounting plate 107 disposed above the power supply unit 103.
  • the mounting plate 107 is made of a low dielectric loss material. Heated objects 108 and 109 are arranged on the mounting plate 107. In this state, the microwave generator 104 supplies the microwave 110.
  • FIGS. 8A and 8B are diagrams showing the electric field distribution in the processing chamber 101 shown in FIG.
  • FIG. 8A shows an electric field distribution when the resonance unit 106 is not provided
  • FIG. 8B shows an electric field distribution when the resonance unit 106 is provided on the right ceiling surface of the processing chamber 101.
  • the microwave processing apparatus 100 includes a processing chamber 101 surrounded by metal walls, a microwave supply unit 160 that supplies microwaves to the processing chamber 101, and a microwave frequency band.
  • a resonance unit 106 having a resonance frequency.
  • the resonance section 106 has three patch resonators (square patch resonators 106a) arranged along the direction of the polarization plane generated on the metal wall surface forming the processing chamber 101.
  • the standing wave does not change. That is, when three rectangular patch resonators 106a are arranged along the direction of the polarization plane, the place where the rectangular patch resonators 106a are arranged is the position of the antinode of the standing wave or the position of the node. Regardless of this, there will always be a standing wave node at that location.
  • the standing wave distribution in the processing chamber 101 that is, the microwave energy distribution can be controlled. Therefore, for example, when heating a plurality of objects to be heated simultaneously, each object to be heated can absorb desired microwave energy.
  • one of the objects to be heated does not absorb microwave energy more than the other. Can be controlled.
  • the resonance unit 106 includes a flat rectangular patch resonator 106a.
  • the resonance section 106 can be arranged without substantially impairing the effective volume inside the processing chamber 101.
  • the ⁇ ⁇ ⁇ square patch resonator 106 a is arranged such that the patch surface faces the inside of the processing chamber 101, and the surface opposite to the patch surface has the same potential as the metal wall surface of the processing chamber 101. With this configuration, a sufficient effective volume inside the processing chamber 101 can be secured.
  • Three rectangular patch resonators 106a are arranged on one of the metal wall surfaces constituting the processing chamber 101. This makes it possible to easily predict a change in the standing wave distribution due to the resonance unit 106. As a result, the object to be heated can be heated as desired.
  • the resonance unit 106 is disposed on the metal wall surface of the processing chamber 101 opposite to the metal wall surface of the processing chamber 101 in which the power supply unit 103 is disposed.
  • the microwave energy distribution can be concentrated near the power supply unit 103.
  • the object to be heated can be efficiently heated together with the microwave energy from the power supply unit 103.
  • the microwave supply unit 160 includes the microwave generation unit 104 and the control unit 105 that controls the oscillation frequency and output of the microwave generation unit 104. Thereby, a plurality of objects to be heated can be heated simultaneously.
  • the resonance unit 106 may include four or more rectangular patch resonators 106a.
  • the center position of the combination differs depending on the combination of three adjacent patch resonators among the four or more patch resonators. This substantially corresponds to the existence of a plurality of combinations of three patch resonators.
  • the microwave processing apparatus 100 has basically the same configuration as that of the first embodiment except for the resonance unit 106.
  • FIG. 9 is a diagram showing a configuration of the resonance section 106 in the present embodiment.
  • the resonance section 106 has a square conductor 106c having a square shape.
  • the dielectric 106b is provided in each of the five regions included in the center row and the center column.
  • the resonance section 106 of the present embodiment has five rectangular patch resonators 106a arranged in a cross shape.
  • FIGS. 10A and 10B are diagrams illustrating an example of the arrangement of the resonance unit 106 and the power supply unit 103 on one metal wall surface (for example, a ceiling surface) of the processing chamber 101.
  • FIG. 10A is a diagram illustrating an example of the arrangement of the resonance unit 106 and the power supply unit 103 on one metal wall surface (for example, a ceiling surface) of the processing chamber 101.
  • the power supply unit 103 has a horizontally long waveguide opening. Therefore, the vibration direction of the electric field E1 is the vertical direction (the vertical direction in FIG. 10A), and the plane of polarization is the vertical direction.
  • the power supply unit 103 has a vertically elongated waveguide opening. Therefore, the vibration direction of the electric field E1 is the horizontal direction (the left-right direction in FIG. 10A), and the plane of polarization is the horizontal direction.
  • three rectangular patch resonators 106a arranged in the horizontal direction are similar to the resonance unit 106 in the first embodiment.
  • the vertical direction and the horizontal direction correspond to the front-back direction and the left-right direction of the processing chamber 101 in FIG. 1, respectively.
  • the processing chamber 101 has a horizontally long rectangular parallelepiped shape, and the power supply unit 103 is arranged in parallel with the outer shape of the processing chamber 101.
  • the resonance section 106 has the configuration shown in FIG. 9, the resonance section 106 functions similarly to the resonance section 106 in the first embodiment in both the configuration shown in FIG. 10A and the configuration shown in FIG. 10B. .
  • the resonance unit 106 has five patch resonators (square patch resonators 106a) arranged in a cross shape. According to this configuration, the antinode of the standing wave can be changed into a node in any of the vertical polarization plane and the horizontal polarization plane. According to the present embodiment, the standing wave distribution in the processing chamber 101, that is, the microwave energy distribution can be controlled.
  • the resonance section 106 has five rectangular patch resonators 106a arranged in a cross shape. That is, the resonance unit 106 has a total of five patch resonators in which three patch resonators are arranged in the vertical and horizontal directions. With this configuration, the required number of square patch resonators 106a can be reduced as compared with the case where one resonator 106 is provided in each of the vertical direction and the horizontal direction in the first embodiment.
  • the resonance unit 106 four or more rectangular patch resonators 106a may be arranged in the vertical and horizontal directions. In this case, the center position of the combination differs depending on the combination of three adjacent patch resonators among the four or more patch resonators. This substantially corresponds to the existence of a plurality of combinations of three patch resonators.
  • the combination of the other three patch resonators different from the assumed combination of the three patch resonators is different from that of the first embodiment. May function in the same way as the resonance unit 106 in FIG.
  • FIG. 11 is a plan view showing the configuration of the resonance section 130 according to the present embodiment.
  • the resonance section 130 has nine circular conductors 130c arranged on a circular dielectric 130b. Among the nine circular conductors 130c, one circular conductor 130c is arranged at the center, and eight circular conductors 130c are arranged at equal intervals on a circle around the central circular conductor 130c. That is, in this configuration, the three circular patch resonators 130a are arranged in any of the vertical, horizontal, and oblique directions.
  • the vertical direction and the horizontal direction correspond to the front-back direction and the left-right direction of the processing chamber 101 in FIG. 1, respectively.
  • the oblique direction is a direction that forms 45 degrees with respect to both the vertical direction and the horizontal direction.
  • the diameter of the circular conductor 130c is set to be about half the wavelength of the current flowing on the circular conductor 130c, resonance can be generated.
  • the microwave wavelength of 2.45 GHz is about 120 mm in air having a dielectric constant of 1. Therefore, in the case where the dielectric constant of the dielectric 130b is close to 1, for example, styrene foam, the diameter of the circular conductor 130c may be set to about 60 mm.
  • a substrate having a relative dielectric constant of 3.5, tan ⁇ of 0.004, and a thickness of about 0.6 mm is used as the dielectric 130b, and the circular conductor 130c is formed by a copper foil pattern on the substrate. .
  • the diameter of the resonance section 130 could be reduced to 38 mm.
  • FIG. 12A is a longitudinal sectional view showing the configuration of the microwave processing apparatus 100 according to the present embodiment.
  • FIG. 12B is a cross-sectional view taken along line 12B-12B of FIG. 12A.
  • microwaves are not directly radiated from the waveguide 102 to the processing chamber 101 but are radiated to the processing chamber 101 via the radiation antenna 131.
  • the radiation antenna 131 has a coupling shaft 132 coupled to the waveguide 102 and a radiation section 133.
  • the radiating part 133 has three wall surfaces (wall surfaces 134a, 134b, 134c), a flange 135 provided around the wall surface, a ceiling surface 136, and a front opening 137.
  • the radiation antenna 131 has a waveguide structure formed by the wall surfaces 134a, 134b, 134c and the ceiling surface 136, and radiates microwaves from the front opening 137 in the direction of the arrow 138.
  • the microwave processing apparatus 100 has a polarization plane that includes the arrow 138 and is perpendicular to the plane of FIG. 12B.
  • the motor 139 is engaged with the coupling shaft 132, and rotates the coupling shaft 132 according to an instruction from the control unit 105.
  • the radiation part 133 rotates with the rotation of the coupling shaft 132, the direction of the microwave radiated from the front opening 137 and the polarization plane also rotate.
  • the polarization plane has not only a vertical direction and a horizontal direction but also various directions.
  • the resonance section 130 having the configuration shown in FIG. 11 can exert an effect on the polarization plane generated in the configuration shown in FIGS. 12A and 12B.
  • FIG. 13A is a longitudinal sectional view showing another configuration of the microwave processing apparatus 100 according to the present embodiment.
  • FIG. 13B is a cross-sectional view taken along line 13B-13B of FIG. 13A.
  • the radiation antenna 131 has an X-shaped circularly polarized wave opening 140 provided on the ceiling surface 136, and extends upward from FIG. 13A from the circularly polarized wave opening 140. Emit circularly polarized microwaves.
  • the microwave radiated from the waveguide aperture generates an electric field having a single vibration direction. Since the direction of microwave transmission is also single, a single plane of polarization occurs in this case. Such a microwave is called a linearly polarized microwave.
  • the polarization plane has not only a vertical direction and a horizontal direction but also various directions.
  • the resonance section 130 having the configuration shown in FIG. 11 can exert an effect on the polarization plane generated in the configuration shown in FIGS. 13A and 13B.
  • the resonating unit 130 has one circular patch resonator 130a disposed at the center and the same interval on the circumference around the one circular patch resonator 130a. And eight circular patch resonators 130a arranged in the same direction. In this configuration, three patch resonators are arranged in any of the vertical, horizontal, and oblique directions.
  • the resonance section 130 functions in the vertical, horizontal, and oblique directions in the same manner as the resonance section 106 in the first embodiment.
  • the resonance section 130 is configured by a circular patch resonator 130a including a circular conductor 130c.
  • the length of the conductor determines whether resonance occurs.
  • the circular conductor has the same length in any of the vertical, horizontal, and oblique directions.
  • the resonance unit 130 can be generated on any of the vertical, horizontal, and oblique polarization planes.
  • the standing wave distribution in the processing chamber 101 that is, the microwave energy distribution can be controlled.
  • the resonance section 130 of the present embodiment is not limited to the above configuration.
  • the resonance unit 130 may include nine patch resonators arranged in a 3 ⁇ 3 matrix. That is, in the present embodiment, the resonance unit 130 includes a total of nine patch resonators in which three patch resonators are radially arranged in each of the vertical direction, the horizontal direction, and the oblique direction. Having.
  • four or more circular patch resonators 130a may be arranged in each of the vertical, horizontal, and oblique directions.
  • the center position of the combination differs depending on the combination of three adjacent patch resonators among the four or more patch resonators. This substantially corresponds to the existence of a plurality of combinations of three patch resonators.
  • the combination of the other three patch resonators different from the assumed combination of the three patch resonators is different from that of the first embodiment. May function in the same way as the resonance unit 106 in FIG.
  • FIG. 14 is a perspective view illustrating a configuration of a microwave processing apparatus 100 according to the present embodiment.
  • FIG. 15 is a diagram illustrating characteristics of the resonance unit illustrated in FIG. 14.
  • the microwave processing apparatus 100 includes nine resonance units (resonance units 141, 142, and 143) arranged in a 3 ⁇ 3 matrix on the ceiling surface of the processing chamber 101. , 144, 145, 146, 147, 148, 149).
  • Each of the resonators 141 to 149 has nine circular conductors arranged in a 3 ⁇ 3 matrix on a square dielectric. With this configuration, each of the resonance units 141 to 149 has nine patch resonators.
  • the resonance units 141 to 149 have dielectrics of the same size. However, the diameter of the circular conductor included in the circular patch resonator of each resonance part gradually increases in order from the resonance part 141 to the resonance part 149. With this configuration, the resonance frequency of each resonance unit decreases by 10 MHz in order from the resonance unit 141 to the resonance unit 149.
  • the resonance frequencies of the resonance units 141 to 149 are 2.49 GHz, 2.48 GHz, 2.47 GHz, 2.46 GHz, 2.45 GHz, 2.44 GHz, 2.43 GHz, respectively. , 2.42 GHz and 2.41 GHz.
  • the absolute value of the reflection phase is 0 degrees at these resonance frequencies.
  • the resonance section where resonance occurs by controlling the frequency of the supplied microwave, it is possible to switch the resonance section where resonance occurs. For example, when a microwave having a frequency of 2.49 GHz is supplied, only the resonance unit 141 resonates. Accordingly, the antinode of the standing wave can be changed to a node near the left back region where the resonance unit 141 is disposed. As a result, the electric field in the vicinity of the back left region can be reduced.
  • the antinode of the standing wave can be changed into a node near the central region where the resonance unit 145 is disposed. As a result, the electric field in the central region can be weakened.
  • the antinode of the standing wave changes to a node near the left region where the resonance units 141, 144, and 147 are arranged. Can be done. Thereby, the electric field in the left region can be weakened. In this case, the electric field in the right region becomes strong, and as a result, the object to be heated 109 arranged on the right side can be heated strongly.
  • the resonance units 141 to 149 have circular patch resonators. However, the resonance units 141 to 149 may have a rectangular patch resonator. The resonance units 141 to 149 may be the resonance unit 130 according to the third embodiment.
  • the present embodiment by controlling the frequency of the supplied microwave, it is possible to switch the resonance section where resonance occurs. Thereby, the antinode of the standing wave can be changed to a node near the resonance part where resonance occurs. As a result, the electric field in the vicinity of the resonance part where resonance occurs can be reduced.
  • FIG. 16 is a cross-sectional view illustrating a configuration of the microwave processing apparatus 100 according to the present embodiment.
  • the microwave processing apparatus 100 has a resonance section 150 disposed on the ceiling surface of the processing chamber 101.
  • the resonance section 150 has five conductors arranged at a pitch P on a dielectric arranged on the ceiling of the processing chamber 101.
  • five patch resonators (patch resonators 151, 152, 153, 154, and 155) are configured in the resonance unit 150.
  • the conductors of the # 5 patch resonators have different lengths from each other.
  • the conductor of the patch resonator 151 has a length a1
  • the conductor of the patch resonator 152 has a length a2
  • the conductor of the patch resonator 153 has a length a3
  • the conductor of the patch resonator 154 has a length a4, and the conductor of the patch resonator 155.
  • the lengths a1 to a5 have a relationship of a1> a2> a3> a4> a5.
  • each of the patch resonators 151 to 155 has a conductor whose length is in accordance with the order of arrangement of the patch resonators 151 to 155.
  • each of the patch resonators 151 to 155 has a resonance frequency according to the order of arrangement of the patch resonators 151 to 155.
  • a combination of three adjacent patch resonators among these five patch resonators includes a leftmost combination 161, a central combination 162, and a rightmost combination 163.
  • the combination 161 includes the patch resonators 151, 152, and 153.
  • the combination 162 includes the patch resonators 152, 153, and 154.
  • the combination 163 includes the patch resonators 153, 154, and 155.
  • the average of the conductor lengths of the patch resonators included in these combinations becomes shorter in the order from the combination 161 to the combination 163. Therefore, the three patch resonators included in the combination 161 resonate at the frequency f1, the three patch resonators included in the combination 162 resonate at the frequency f2, and the three patch resonators included in the combination 163. When the resonator resonates at the frequency f3, the frequencies f1 to f3 increase in this order.
  • the length of the conductor of the patch resonator 153 is set to approximately ⁇ of the wavelength (effective length) of a microwave used in a general microwave oven.
  • the frequency f2 can be set to 2.45 GHz which is the frequency of the microwave.
  • the conductor length of the patch resonator 152 is slightly longer than that of the patch resonator 153, and the conductor length of the patch resonator 151 is slightly longer than that of the patch resonator 152.
  • the conductor length of the patch resonator 154 is slightly shorter than that of the patch resonator 153, and the conductor length of the patch resonator 155 is slightly shorter than that of the patch resonator 154.
  • the conductors of all the patch resonators have approximately half the wavelength (effective length) of the microwave.
  • the length of the conductor of each patch resonator differs slightly depending on the position of the arrangement.
  • the patch resonator located at the end of the central combination 162 is shared with the combinations 161 and 163 adjacent to the combination 162. According to this configuration, three combinations of three patch resonators can be configured using five patch resonators without using nine patch resonators.
  • the combination of patch resonators in which resonance occurs can be switched.
  • the antinode of the standing wave can be changed to a node near the combination of the patch resonators where resonance occurs.
  • the electric field near the combination of the patch resonators where resonance occurs can be reduced.
  • each of the three combinations of three patch resonators corresponds to one resonance unit. That is, the resonance unit 150 of the present embodiment may be considered to include three resonance units.
  • the patch surfaces of the five patch resonators are made of copper foil applied to one surface of one substrate material.
  • the surface of the substrate material opposite to the patch surface contacts the ceiling surface of the processing chamber 101.
  • the patch resonators 151, 152, 153, 154, 155 can be arranged on the same single-sided substrate.
  • Patch resonators 151, 152, 153, 154, and 155 can be formed of a double-sided board.
  • the opposite surface has the same potential as the metal surface of the processing chamber 101. can do.
  • the present embodiment by controlling the frequency of the supplied microwave, it is possible to switch the combination of patch resonators in which resonance occurs. As a result, the antinode of the standing wave can be changed to a node near the combination of the patch resonators where resonance occurs. As a result, the electric field near the combination of the patch resonators where resonance occurs can be reduced.
  • the resonance unit 150 is disposed only on the ceiling surface of the processing chamber 101.
  • the resonance unit 150 may be disposed on a side surface of the processing chamber 101.
  • a localized standing wave distribution in which a strong electric field is generated on the left side of the processing chamber 101 occurs.
  • the object to be heated placed on the left side of the processing chamber 101 is heated more strongly.
  • the synergistic effect of the two resonating units 150 may provide an effect more than that of FIG. 8B.
  • a dielectric substrate may be used for a device that requires a small energy microwave for a chemical reaction treatment or the like, and a device that requires a large energy microwave for heating a food or the like. In that case, another method may be used.
  • the second effect described with reference to FIGS. 6A to 6C is that the central patch resonator among the three patch resonators is floating from the ground, and the strong electric field generated due to its potential being uncertain is reduced. Weakening by the opposite electric fields generated by the three patch resonators.
  • the standing wave distribution can be arbitrarily controlled only by the on / off control of the switch without controlling the frequency or using all the resonating units of the same size.
  • the present disclosure can be applied to a microwave processing apparatus that performs a heat treatment, a chemical reaction treatment, or the like of food or the like.
  • REFERENCE SIGNS LIST 100 microwave processing apparatus 101 processing chamber 102 waveguide 103 feeding unit 104 microwave generation unit 105 control unit 106, 130, 141, 142, 143, 144, 145, 146, 147, 148, 149, 150 resonance unit 106a Patch resonators 106b, 130b Dielectric 106c Square conductor 107 Mounting plate 108, 109 Heated object 110 Microwave 130a Circular patch resonator 130c Circular conductor 151, 152, 153, 154, 155 Patch resonator 160 Microwave supply unit

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Constitution Of High-Frequency Heating (AREA)

Abstract

La présente invention concerne un appareil de traitement par micro-ondes comprenant : une chambre de traitement qui loge un objet à chauffer ; une unité d'alimentation en micro-ondes qui alimente en micro-ondes la chambre de traitement ; et une unité de résonance qui a une fréquence de résonance dans la bande de fréquence des micro-ondes. L'unité de résonance comporte une pluralité de résonateurs à plaque pour laquelle au moins trois résonateurs à plaque sont placés alignés dans la direction d'un plan de polarisation qui apparaît sur une surface de paroi métallique configurant la chambre de traitement. Le présent mode permet de commander la distribution des ondes stationnaires à l'intérieur de la chambre de traitement, en particulier la distribution d'énergie des micro-ondes.
PCT/JP2019/035168 2018-09-10 2019-09-06 Appareil de traitement par micro-ondes WO2020054608A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP19860278.1A EP3852496A4 (fr) 2018-09-10 2019-09-06 Appareil de traitement par micro-ondes
CN201980003759.6A CN111183708B (zh) 2018-09-10 2019-09-06 微波处理装置
JP2019569855A JP7380221B2 (ja) 2018-09-10 2019-09-06 マイクロ波処理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018168391 2018-09-10
JP2018-168391 2018-09-10

Publications (1)

Publication Number Publication Date
WO2020054608A1 true WO2020054608A1 (fr) 2020-03-19

Family

ID=69778039

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2019/035168 WO2020054608A1 (fr) 2018-09-10 2019-09-06 Appareil de traitement par micro-ondes

Country Status (4)

Country Link
EP (1) EP3852496A4 (fr)
JP (1) JP7380221B2 (fr)
CN (1) CN111183708B (fr)
WO (1) WO2020054608A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113038650A (zh) * 2021-04-14 2021-06-25 西华师范大学 一种微波加热装置以及微波发射控制电路

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007522735A (ja) * 2004-02-10 2007-08-09 テレフオンアクチーボラゲット エル エム エリクソン（パブル） 調整可能な装置
WO2015173601A1 (fr) * 2014-05-13 2015-11-19 Centre National De La Recherche Scientifique - Cnrs - Four à micro-ondes
WO2017081855A1 (fr) * 2015-11-10 2017-05-18 パナソニック株式会社 Dispositif de chauffage à microondes
WO2019009174A1 (fr) * 2017-07-04 2019-01-10 パナソニック株式会社 Dispositif de traitement à micro-ondes

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01213442A (ja) * 1988-02-18 1989-08-28 Asahi Chem Ind Co Ltd ウォータージェットルームの製織方法
FR2775552B1 (fr) * 1998-02-27 2000-05-19 Standard Products Ind Dispositif de chauffage d'un materiau par micro-ondes
US6943330B2 (en) * 2003-09-25 2005-09-13 3M Innovative Properties Company Induction heating system with resonance detection
EP2200402B1 (fr) * 2008-12-19 2011-08-31 Whirlpool Corporation Four à micro-ondes commutant entre modes prédéfinis
US20120175363A1 (en) 2010-12-30 2012-07-12 Goji Limited Rf-based pyrolytic cleaning
WO2015133081A1 (fr) * 2014-03-03 2015-09-11 パナソニック株式会社 Appareil de réglage de distribution de champ électromagnétique, son procédé de commande, et appareil de chauffage à micro-ondes
EP3419383B1 (fr) 2016-02-17 2021-07-07 Panasonic Corporation Dispositif chauffant à micro-ondes
US10531526B2 (en) * 2016-06-30 2020-01-07 Nxp Usa, Inc. Solid state microwave heating apparatus with dielectric resonator antenna array, and methods of operation and manufacture
CN108337758A (zh) * 2018-02-05 2018-07-27 广东美的厨房电器制造有限公司 微波烹饪设备、微波加热控制方法和存储介质

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007522735A (ja) * 2004-02-10 2007-08-09 テレフオンアクチーボラゲット エル エム エリクソン（パブル） 調整可能な装置
WO2015173601A1 (fr) * 2014-05-13 2015-11-19 Centre National De La Recherche Scientifique - Cnrs - Four à micro-ondes
WO2017081855A1 (fr) * 2015-11-10 2017-05-18 パナソニック株式会社 Dispositif de chauffage à microondes
WO2019009174A1 (fr) * 2017-07-04 2019-01-10 パナソニック株式会社 Dispositif de traitement à micro-ondes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NATIONAL RESEARCH AND DEVELOPMENT AGENCYNEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT ORGANIZATION, DEVELOPMENT OF INDUSTRIAL MICROWAVE HEATING SYSTEM THAT USES GAN AMPLIFIER MODULES AS HEAT SOURCES, 25 January 2016 (2016-01-25)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113038650A (zh) * 2021-04-14 2021-06-25 西华师范大学 一种微波加热装置以及微波发射控制电路

Also Published As

Publication number Publication date
EP3852496A4 (fr) 2021-12-01
JPWO2020054608A1 (ja) 2021-08-30
JP7380221B2 (ja) 2023-11-15
CN111183708A (zh) 2020-05-19
EP3852496A1 (fr) 2021-07-21
CN111183708B (zh) 2022-06-14

Similar Documents

Publication Publication Date Title
US10045403B2 (en) Microwave heating device
KR100565657B1 (ko) 전자레인지
JP2000030853A (ja) 電子レンジおよび導波管システム
JP2013218904A (ja) マイクロ波加熱装置
WO2020054608A1 (fr) Appareil de traitement par micro-ondes
JP6273598B2 (ja) マイクロ波加熱装置
JPH0734525B2 (ja) 円形導波管のスロットアンテナ
JP6179814B2 (ja) マイクロ波加熱装置
JP7230802B2 (ja) マイクロ波処理装置
JP2014229532A (ja) マイクロ波加熱装置
JP2000348858A (ja) 電子レンジ
JP5169254B2 (ja) マイクロ波処理装置
KR100275968B1 (ko) 전자레인지의 도파관 시스템
RU2145155C1 (ru) Микроволновая печь
WO2024004429A1 (fr) Dispositif de chauffage par micro-ondes
JP7378019B2 (ja) マイクロ波処理装置
JP7329736B2 (ja) 高周波加熱装置
JP2010092794A (ja) マイクロ波処理装置
JP2015162321A (ja) 高周波加熱装置
KR100311455B1 (ko) 도파관의시스템의임피던스정합장치
JP2013125670A (ja) マイクロ波加熱装置
JP2014089942A (ja) マイクロ波加熱装置
JP6424332B2 (ja) マイクロ波加熱装置
JP2013026099A (ja) 高周波加熱装置
KR200241472Y1 (ko) 전자레인지의 균일 가열장치

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2019569855

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19860278

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2019860278

Country of ref document: EP

Effective date: 20210412