WO2020050647A1 - Procédé de pilotage de dispositif électronique - Google Patents

Procédé de pilotage de dispositif électronique Download PDF

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Publication number
WO2020050647A1
WO2020050647A1 PCT/KR2019/011478 KR2019011478W WO2020050647A1 WO 2020050647 A1 WO2020050647 A1 WO 2020050647A1 KR 2019011478 W KR2019011478 W KR 2019011478W WO 2020050647 A1 WO2020050647 A1 WO 2020050647A1
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Prior art keywords
electronic device
driving
voltage
pulse
pulse voltage
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PCT/KR2019/011478
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English (en)
Korean (ko)
Inventor
최만수
안남영
정기완
Original Assignee
재단법인 멀티스케일 에너지시스템 연구단
서울대학교산학협력단
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Priority claimed from KR1020190109398A external-priority patent/KR102315244B1/ko
Application filed by 재단법인 멀티스케일 에너지시스템 연구단, 서울대학교산학협력단 filed Critical 재단법인 멀티스케일 에너지시스템 연구단
Priority to CN201980057201.6A priority Critical patent/CN112640297B/zh
Publication of WO2020050647A1 publication Critical patent/WO2020050647A1/fr
Priority to US17/192,052 priority patent/US20210211094A1/en

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/53—Generators characterised by the type of circuit or by the means used for producing pulses by the use of an energy-accumulating element discharged through the load by a switching device controlled by an external signal and not incorporating positive feedback
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a method for driving an electronic device, and more specifically, a power supply source or other electronic devices including perovskite solar cells, organic solar cells, and the like, so as to have higher stability and longevity. It relates to a method of driving an electronic device.
  • a method for receiving power at a maximum efficiency load that can be known through a current voltage characteristic of a solar cell is called maximum power point tracking (MPPT).
  • MPPT maximum power point tracking
  • the inventors of the present invention have found through a recent study that the performance is drastically reduced by promoting irreversible chemical reaction between water and oxygen in water and air ("Trapped charge driven degradation of perovskite solar cells", Choi Man-soo et al., 8 persons, 2016.4 .27. And “Atomistic mechanism for trapped-charge driven degradation of perovskite solar cells", Choi Man Soo and 6 others, see Sep. 3, 2017).
  • the conventional maximum power point tracking method is a method in which the solar cell receives power in a condition that can produce the maximum power per hour, and it was not difficult to apply it to a stable inorganic solar cell.
  • the conventional maximum power point tracking method is applied to the perovskite solar cell as it is, charges trapped in the light absorption layer continue to accumulate, which promotes irreversible chemical reactions between the light absorption layer and moisture and oxygen in the air. The performance will drop sharply. That is, in the case of an organic / inorganic perovskite solar cell that has been recently researched, there is a problem in that it exhibits a life span of at most several months at the most because of its low stability.
  • Power supply sources for organic / inorganic perovskite solar cells have a fairly low stability and have a long service life of several months. However, extending the life of organic / inorganic perovskite solar cells requires a commercialization step that requires a minimum unit of years. This is a task that must be solved.
  • a method of driving an electronic device of the present invention includes driving an electronic device; And applying a pulse voltage or pulse current to the electronic device.
  • the present invention by applying a specific pulse at a specific cycle for maximum power point tracking and stabilizing as well as maximum power point tracking of the power supply method of the power source, periodic rest is obtained by this power receiving method. It has the advantage of increasing the lifespan by suppressing the chemical reaction between the light absorbing layer and moisture and oxygen in the air by not only redistributing the trapped charges accumulated during the maximum power point tracking method, but also by simply redistributing the lifespan through the increase of lifespan.
  • the driving method of the electronic device of the present invention effectively extracts electrons and holes accumulated inside the device, it is possible to prevent electrons and holes from accumulating inside the device and reducing the life of the device.
  • the present invention can provide a driving method capable of increasing the lifespan of an electronic device such as an organic thin film transistor (OTFT), an organic light emitting diode (OLED), an organic sensor, and an organic memory device and securing long-term stability.
  • an electronic device such as an organic thin film transistor (OTFT), an organic light emitting diode (OLED), an organic sensor, and an organic memory device and securing long-term stability.
  • the method of driving the electronic device of the present invention is effective when the concentrated strong light is irradiated to the device, such as concentrator photovoltaic (CPV), to accelerate the generation of electrons and holes inside the device. It can improve the performance and life of the device.
  • CPV concentrator photovoltaic
  • FIG. 1 shows an electrical circuit model of a power source 100 (eg, solar cell) among electronic devices applicable to the present invention.
  • a power source 100 eg, solar cell
  • FIG. 2 shows a current voltage characteristic curve and an output voltage characteristic curve of a power supply 100 (for example, a solar cell) applicable to the present invention.
  • FIG 3 shows a load voltage graph when a voltage value and a pulse voltage at a maximum power point are applied according to an embodiment of the present invention.
  • FIG. 4 schematically enlarges a case in which a forward bias pulse voltage is applied in the graph of FIG. 3 and shows a scaled graph and a current graph accordingly.
  • FIG. 9 is a graph showing parameters for calculating a pulse voltage according to an embodiment.
  • FIG. 10 is a graph comparing the efficiency of an electronic device to which a pulse voltage calculated as a parameter of the graph of FIG. 9 is applied and an electronic device operating only in a maximum power point tracking (MPPT) method.
  • MPPT maximum power point tracking
  • 11 is a graph showing parameters for calculating a pulse voltage according to another embodiment.
  • FIG. 12 is a graph comparing the efficiency of an electronic device to which a pulse voltage calculated as a parameter of the graph of FIG. 11 is applied and an electronic device operating only in the MPPT method.
  • FIG. 13 is a graph showing parameters for calculating a pulse voltage according to another embodiment.
  • FIG. 14 is a graph comparing the efficiency of an electronic device when the pulse voltage calculated as a parameter of the graph of FIG. 13 is applied to an electronic device under an open circuit (OC) condition and when it is not.
  • OC open circuit
  • 15 is a graph showing parameters for calculating pulse current according to another embodiment.
  • a method of driving an electronic device of the present invention includes driving an electronic device; And applying a pulse voltage or a pulse current to the electronic device.
  • the electronic device is a power supply
  • driving the electronic device may include driving the power supply
  • driving the power supply may include extracting power at a maximum power point of the power supply.
  • the step of applying the pulse voltage or pulse current may include applying the pulse voltage or the pulse current at predetermined time intervals.
  • the step of applying the pulse voltage or pulse current may include applying a pulse voltage or pulse current when a predetermined condition is satisfied.
  • the pulse voltage or the pulse current is at least any one selected from the group consisting of steps, ramps, sine waves, and signals generated through these operations. It may be a single pulse signal.
  • the power supply may be a solar cell.
  • the solar cell may be a perovskite solar cell.
  • the solar cell may be an organic solar cell.
  • the electronic device may be any one selected from the group consisting of an organic thin film transistor (OTFT), an organic light emitting diode (OLED), an organic sensor, and an organic memory device.
  • OFT organic thin film transistor
  • OLED organic light emitting diode
  • OLED organic light emitting diode
  • organic sensor organic sensor
  • organic memory device any one selected from the group consisting of an organic thin film transistor (OTFT), an organic light emitting diode (OLED), an organic sensor, and an organic memory device.
  • OFT organic thin film transistor
  • OLED organic light emitting diode
  • the pulse voltage or the pulse current may be calculated based on characteristic information of the electronic device.
  • the electronic device is a solar cell
  • the characteristic information may include one or more of Isc, Rsh, Rs, i0, mkbT, Voc, Imax, Vmax, Pmax, FF and Eff. have.
  • the characteristic information may be measured through jv sweep.
  • the characteristic information may be measured through a finite number of jv value-based calculations.
  • the jv value may be selected from a voltage that is 0.3V smaller than the driving voltage to a voltage that is 0.3V larger than the driving voltage.
  • a part of the finite jv value may be selected from previously measured characteristic information of the electronic device.
  • the driving method of the electronic device of the present invention may be to extract power at the maximum power point based on the characteristic information of the previously measured electronic device.
  • the pulse voltage may be calculated as a value less than zero.
  • the pulse voltage may be calculated by Equation (1).
  • Vp -r ⁇ Isc ⁇ Rs
  • Vp is the pulse voltage
  • r is a constant of 0.9 to 2
  • Isc is the short circuit current of the electronic device
  • Rs is the series resistance of the electronic device.
  • the pulse voltage may be calculated by Equation (2).
  • Vp is the pulse voltage
  • r is a constant from 0.1 to 0.3
  • Voc is the open voltage of the electronic device.
  • the pulse voltage or the pulse current may be calculated as a value greater than zero.
  • the pulse voltage may be calculated by Equation (3).
  • Vp is a pulse voltage
  • r is a constant of 1 to 1.2
  • Voc is an open voltage of the electronic device.
  • the pulse current may be calculated by Equation (3).
  • Ip is the pulse current
  • r is a constant of 0.1 to 1
  • Isc is the short circuit current of the electronic device.
  • the driving method of the electronic device of the present invention may further include calculating an error rate ⁇ by Equation 5 after the step of applying a pulse voltage to the electronic device.
  • Iout is the current value output from the electronic device to which the pulse voltage is applied, and Isc is the short circuit current of the electronic device.
  • the driving method of the electronic device of the present invention may further include applying a pulse voltage greater than an open voltage Voc to the electronic device when the error rate ⁇ is greater than or equal to a specific value after the step of calculating the error rate ⁇ .
  • the solar cell may be combined with a condensing means for concentrating light.
  • the driving method of the electronic device according to the present invention is:
  • the electronic device may be at least one selected from the group consisting of a power source 100, an organic thin film transistor (OTFT), an organic light emitting diode (OLED), an organic sensor, and an organic memory device.
  • the power supply 100 may generate power from energy sources such as light, heat, electromagnetic waves, and vibration.
  • the power source may be, for example, a solar cell that generates electrical energy from solar energy, or an organic / inorganic perovskite solar cell, an organic electronic device such as an organic solar cell, or the like.
  • the driving of the electronic device (S10) includes driving the power supply 100. Also, the step of driving the power supply 100 includes extracting power at the maximum power point of the power supply 100.
  • an electrical circuit model of the power supply 100 (eg, a solar cell) among electronic devices applicable to the present invention.
  • an electrical circuit model of the power supply 100 eg, a solar cell
  • the voltage (V) and current (I) generated in the electrical circuit model of the solar cell can be used to know the power generated in the electrical circuit model of the solar cell.
  • the power source 100 (for example, a solar cell) has a current voltage characteristic curve and an output voltage characteristic curve, as shown in FIG. 2, and when the power source 100 has non-linear characteristics, such as a solar cell, In order to extract the maximum power from the power supply 100, power generated from the power supply 100 is monitored to receive power at the maximum power point.
  • the power transfer method at the maximum efficiency load that can be seen through the current voltage characteristics of the solar cell is called the maximum power point tracking method (MPPT).
  • MPPT maximum power point tracking method
  • the steps of driving the electronic device (S10) for example, in the step of extracting power from the maximum power point of the power supply, power is received according to the maximum power point tracking method (MPPT).
  • the step (S20) of applying a pulse voltage or a pulse current to the electronic device Accordingly, in the present invention, the step (S20) of applying a pulse voltage or a pulse current to the electronic device.
  • the present invention may be implemented by applying a pulse voltage or a pulse current as a bias voltage applied to the power supply 100.
  • the black line represents the voltage value at the maximum power point
  • the blue line or red line means the pulse voltage applied to change the voltage value at the maximum power point.
  • the blue line means a case where a forward bias pulse voltage is applied, and a pulse voltage that applies a load voltage larger than the voltage at the maximum power point is applied.
  • the red line is a case in which a reverse bias pulse voltage is applied, and means a case in which a pulse voltage for applying a voltage in the photocurrent direction of the power supply 100 is applied.
  • FIG. 4 schematically enlarges a case in which a forward bias pulse voltage is applied in the graph of FIG. 3 and shows a scaled graph and a current graph accordingly.
  • the present invention is not limited to the above, and from simple pulses such as a forward pulse applying a load larger than the maximum power point or a reverse pulse applying a voltage in the photocurrent direction of the solar cell, the device A pulse signal consisting of at least one selected from the group consisting of steps, ramps, sine waves, and signals generated through these operations may be applied to a highly designed pulse in consideration of have.
  • FIG. 5 shows examples of pulses applicable to the present invention. Shows examples of pulse signals such as forward step, reverse step, ramp 1, ramp 2, and sine wave, and all modifications that can be generated through calculation symbols such as “&” or “*” are applied to the present invention. It may be possible pulse. In addition, in the case of a sine wave, various sine wave pulses implemented by modifying values such as frequency and phase can be applied.
  • the perovskite solar cell when a load is applied to the perovskite solar cell, trapped charges accumulated in grain boundaries, defects, and interfaces are accumulated.
  • the trapped charge promotes an irreversible chemical reaction between the material of the light absorbing layer and the moisture and oxygen in the air, causing a decrease in performance, but according to the present invention, the charge can be evenly redistributed through appropriate electrical pulses.
  • the electronic device for example, the power supply 100
  • the power supply 100 may be connected to a control circuit (not shown) that can apply a pulse circuit as a bias voltage.
  • the step (S20) of applying a pulse voltage or a pulse current to the electronic device may include applying a pulse voltage or pulse current at a predetermined time interval. That is, while receiving power from the perovskite solar cell in a conventional maximum power point tracking method, a pulse signal capable of stabilizing the power supply 100 at a predetermined time interval may be applied.
  • the predetermined time interval may be, for example, 0.1 seconds to 1 second.
  • the step of applying a pulse voltage or pulse current to the electronic device (S20) may include applying a pulse voltage or pulse current when a predetermined condition is satisfied.
  • a predetermined condition when a condition such as efficiency reduction other than a temperature effect is satisfied, a pulse voltage or a pulse current may be applied.
  • the most suitable pulse voltage or pulse current can be applied according to predetermined conditions. More specifically, other optimized pulses may be applied in the initial section of the deterioration and the section in which the deterioration has progressed much before the deterioration of the device starts to appear.
  • FIG. 7 is an initial current voltage characteristic curve of the experimental device, and it can be seen that the initial performance of the two devices was the same.
  • an experimental device of FIG. 7 for example, indium tin oxide, fullerene, perovskite light absorbing layer (CH 3 NH 3 PbI 3 ), spiro-MeOTAD, gold electrode ( Au) is a perovskite solar cell made of a planar junction structure in order. It can be seen from FIG. 7 that the cause of the longer life of the device to which the reverse pulse voltage was applied than the device to which the pulse voltage was not applied was not due to the difference in the initial state.
  • the pulse voltage or pulse current applied to the device may be calculated based on characteristic information of the electronic device.
  • the characteristic information may include one or more of Isc, Rsh, Rs, i0, mkbT, Voc, Imax, Vmax, Pmax, FF and Eff.
  • Isc is a short circuit current of an electronic device and is a current value when the voltage of the electronic device is 0.
  • Rsh is the short circuit resistance of the electronic device.
  • Rs is the series resistance of the electronic device.
  • i0 is the reverse saturation current.
  • mkbT is a characteristic coefficient of an electronic device considering thermal fluctuation (KbT) and statistical characteristics (m) of the electronic device.
  • Voc is an open voltage of the electronic device and is a voltage value when the current of the electronic device is zero.
  • Imax is the current value at the maximum power point.
  • Vmax is the voltage value at the maximum power point.
  • Pmax is the power value at the maximum power point.
  • FF is the product of the current density at the maximum power point and the voltage value (Vmax ⁇ Imax) divided by the product of Voc and Isc.
  • the characteristic information of the electronic device can be measured through jv sweep.
  • the jv sweep may be to obtain a j-v curve by measuring the current while applying a specific voltage to know the driving characteristics of the electronic device.
  • j may be a surface current density
  • v may be a voltage.
  • the characteristic information can be measured through a finite number of jv value-based operations.
  • the jv value may be selected from values that are 0.3 V smaller than the driving voltage and 0.3 V larger than the driving voltage.
  • the jv value may be selected from values ranging from a voltage 0.2V smaller than the driving voltage to a voltage 0.2V larger than the driving voltage.
  • the jv value may be a voltage value applied to the electronic device in order to measure the surface current density in order to know driving characteristics of the electronic device.
  • the driving voltage may be a voltage applied to the electronic device to operate the electronic device.
  • Some of the finite jv values can be selected from previously measured characteristic information of an electronic device. That is, variables for measurement when measuring an electronic device can be obtained based on measurement information of the previously measured electronic device. Specifically, power may be extracted from the maximum power point based on previously measured characteristic information of the electronic device.
  • the pulse voltage Vp may be the product of the short-circuit current Isc and the series resistance Rs inside the electronic device. More specifically, it may be a reverse bias pulse voltage by taking a negative sign for the multiplication value of the two parameters.
  • the pulse voltage can be calculated as Equation 1 below.
  • Vp -r ⁇ Isc ⁇ Rs
  • Isc is a short-circuit current, and when the voltage difference between both ends of the electronic device is 0, it means a current value flowing through the conductor.
  • Rs is a series resistance value inside the electronic device, and when the current is 0, the voltage may be a differential value of the current.
  • r may be a constant value designated at the time of driving.
  • the pulse voltage Vp may be -0.126 V.
  • FIG. 10 is a graph showing data experimented with ITO / SnO2 / (FAI) 0.9 (MABr) 0.1PbI2 / Spiro-MeOTAD / Au (Glass encap) device, the efficiency obtained by performing jv-sweep at 1 hour intervals (pce ) Is plotted against the initial value.
  • the graph of FIG. 10 shows that the lifetime is improved when the pulse voltage Vp is applied to the electronic device for 30 seconds at a time interval of 1 hour (red), compared to the case of the device operating only with the MPPT method (black).
  • the efficiency was reduced by about 5% per 100 hours, and the efficiency was reduced by about 1% per 100 hours compared to the device driven by the driving method of the electronic device of the present invention.
  • FIG. 11 is a graph showing parameters for calculating a pulse voltage according to another embodiment
  • FIG. 12 is an efficiency of an electronic device to which a pulse voltage calculated as a parameter of the graph of FIG. 11 is applied and an electronic device operating only in the MPPT method It is a graph to compare.
  • the pulse voltage Vp may be a product of an open voltage Voc and a constant value r. More specifically, it may be a reverse bias pulse voltage by taking a negative sign for the multiplication value of the two parameters.
  • the pulse voltage can be calculated as Equation 2 below.
  • Voc may be a voltage applied between both ends of the electronic device when the current flowing through the electronic device is zero as an open voltage.
  • r may be a constant value designated at the time of driving. For example, as illustrated in FIG. 11, when Voc is 1.1V and r is 0.1, Vp may be -0.11V.
  • FIG. 12 is a graph showing data experimented with ITO / SnO2 / (FAI) 0.9 (MABr) 0.1PbI2 / Spiro-MeOTAD / Au (Glass encap) device, the efficiency obtained by performing jv-sweep at 1 hour intervals (pce ) Is plotted against the initial value.
  • the graph of FIG. 12 shows that the lifespan is improved when the pulse voltage Vp is applied to the electronic device for 30 seconds at a time interval of 1 hour (red), compared to the device operating only by the MPPT method (black).
  • the efficiency was reduced by about 5% per 100 hours, and the efficiency was reduced by about 3% per 100 hours than the device driven by the driving method of the electronic device of the present invention.
  • FIG. 13 is a graph showing parameters for calculating a pulse voltage according to another embodiment
  • FIG. 14 is a case in which a pulse voltage calculated as a parameter of the graph of FIG. 13 is applied to an electronic device under an OC condition and is not This graph compares the efficiency of electronic devices.
  • the pulse voltage Vp is an open voltage Voc multiplied by a constant value r, and may be a forward bias pulse voltage.
  • the pulse voltage can be calculated as Equation 3 below.
  • Voc may be a voltage applied between both ends of the electronic device when the current flowing through the electronic device is zero as an open voltage.
  • r may be a constant value designated at the time of driving. For example, as illustrated in FIG. 13, when Voc is 1V and r is 1.09, Vp may be 1.09V.
  • FIG. 14 is a graph showing data experimented with an ITO / C60 / MAPbI3 / Spiro-MeOTAD / Au device, the efficiency obtained by performing jv-sweep on an electronic device continuously exposed under 1 sun conditions every 10 minutes (pce) It is plotted against the initial value.
  • the graph in FIG. 14 shows that the lifespan is improved when the pulse voltage Vp is applied for 60 seconds (red) at intervals of 1 minute, rather than only under the OC condition (black).
  • the pulse current Ip is a product of a short-circuit current Isc and a constant value r, and may be a forward bias pulse current.
  • the pulse current can be calculated as Equation 4 below.
  • Isc is a short-circuit current, and when the voltage difference between both ends of the electronic device is 0, it means a current value flowing through the conductor.
  • r may be a constant value designated when driving. For example, as illustrated in FIG. 15, when Isc is 1.8mA and r is 0.1, the pulse current Ip may be 0.18mA.
  • the driving method of the electronic device of the present invention may further include calculating an error rate ⁇ by Equation 5 below after applying a pulse voltage to the electronic device.
  • the step of calculating the error rate ⁇ may be calculated when a pulse voltage smaller than 0 is applied to the electronic device.
  • Iout is the current value output from the electronic device to which the pulse voltage is applied
  • Isc is the short circuit current of the electronic device.
  • the concentrating solar cell may be combined with a condensing means for concentrating light.
  • the condensing means may be an optical device that focuses light such as a lens and a reflector.
  • the power supply 100 has been described as an example, but the present invention is not limited to the above, an organic thin film transistor (OTFT), an organic light emitting diode (OLED), an organic sensor, Various modifications, changes, and applications are possible according to various conditions and environments in which the present invention is implemented, such as a method in which a pulse voltage is applied while driving an organic memory device.
  • OFT organic thin film transistor
  • OLED organic light emitting diode
  • OLED organic light emitting diode
  • an organic sensor Various modifications, changes, and applications are possible according to various conditions and environments in which the present invention is implemented, such as a method in which a pulse voltage is applied while driving an organic memory device.
  • the present invention by applying a specific pulse at a specific cycle for maximum power point tracking and stabilizing as well as maximum power point tracking of the power supply method of the power source, periodic rest is obtained by this power receiving method. It has the advantage of increasing the lifespan by suppressing the chemical reaction between the light absorbing layer and moisture and oxygen in the air by not only redistributing the trapped charges accumulated during the maximum power point tracking method, but also by simply redistributing the lifespan through the increase of lifespan.
  • the driving method of the electronic device of the present invention effectively extracts electrons and holes accumulated inside the device, it is possible to prevent electrons and holes from accumulating inside the device and reducing the life of the device.
  • the present invention can provide a driving method capable of increasing the lifespan of an electronic device such as an organic thin film transistor (OTFT), an organic light emitting diode (OLED), an organic sensor, and an organic memory device and securing long-term stability.
  • an electronic device such as an organic thin film transistor (OTFT), an organic light emitting diode (OLED), an organic sensor, and an organic memory device and securing long-term stability.
  • the method of driving the electronic device of the present invention is effective when the concentrated strong light is irradiated to the device, such as concentrator photovoltaic (CPV), to accelerate the generation of electrons and holes inside the device. It can improve the performance and life of the device.
  • CPV concentrator photovoltaic

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Abstract

La présente invention concerne un procédé de pilotage d'un dispositif électronique permettant au dispositif électronique d'avoir une meilleur stabilité et une durée de vie plus longue. Plus particulièrement, l'invention concerne un procédé de pilotage d'un dispositif électronique permettant à des sources d'alimentation électrique comprenant des batteries solaires de pérovskite, des batteries solaires organiques, ou analogues, ou à d'autres dispositifs électroniques, d'avoir une meilleur stabilité et une durée de vie plus longue.
PCT/KR2019/011478 2018-09-05 2019-09-05 Procédé de pilotage de dispositif électronique WO2020050647A1 (fr)

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CN201980057201.6A CN112640297B (zh) 2018-09-05 2019-09-05 电子元件的驱动方法
US17/192,052 US20210211094A1 (en) 2018-09-05 2021-03-04 Method for driving electronic device

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KR1020190109398A KR102315244B1 (ko) 2018-09-05 2019-09-04 전자 소자의 구동 방법
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