WO2020042257A1 - 用于铜钼膜层的刻蚀方法及刻蚀装置 - Google Patents

用于铜钼膜层的刻蚀方法及刻蚀装置 Download PDF

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WO2020042257A1
WO2020042257A1 PCT/CN2018/107198 CN2018107198W WO2020042257A1 WO 2020042257 A1 WO2020042257 A1 WO 2020042257A1 CN 2018107198 W CN2018107198 W CN 2018107198W WO 2020042257 A1 WO2020042257 A1 WO 2020042257A1
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etching
film layer
copper
mass fraction
molybdenum film
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PCT/CN2018/107198
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English (en)
French (fr)
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赵芬利
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深圳市华星光电技术有限公司
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Publication of WO2020042257A1 publication Critical patent/WO2020042257A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals

Definitions

  • the invention relates to the field of copper process etching, in particular to an etching method and an etching device for a copper-molybdenum film layer.
  • the length of the metal wiring such as the gate and data lines connected to the thin film transistor will increase, and the resistance of the metal wiring will increase, which will cause problems such as signal delay.
  • copper metal is usually used.
  • copper has a lower resistance value and excellent performance. It does not need to meet the width requirements of aluminum wires, which can improve the penetration of the display and the use efficiency of the backlight. Therefore, copper metal is more suitable for the production of high-resolution panels.
  • the process of forming a copper process pattern in a TFT-LCD includes: firstly forming a copper-molybdenum film layer on a substrate, then forming a predetermined pattern photoresist on the copper-molybdenum film layer, and finally etching the copper-molybdenum film layer with an etching solution.
  • Etch to form metal wiring in a predetermined pattern the role of molybdenum is to increase the adhesion of copper to the substrate and prevent copper from diffusing to unspecified areas of the substrate.
  • the conventional etching solution contains fluoride, which is corrosive to the substrate and the environment, and has low etching efficiency and poor stability.
  • the invention provides an etching method and an etching device for a copper-molybdenum film layer, so as to solve the slower rate of copper-molybdenum oxide of hydrogen peroxide in the existing etching solution, which results in low etching efficiency and further affects Problems with the capacity of the display panel.
  • the invention provides a method for etching a copper-molybdenum film layer, including:
  • Step S10 forming a copper-molybdenum film layer on the substrate
  • Step S20 forming a photoresist in a predetermined pattern on the copper-molybdenum film layer
  • Step S30 placing the substrate on which the photoresist is formed into an etching device
  • Step S40 irradiate the inside of the etching device with ultraviolet rays, and fill the etching device with ozone, wherein the intensity of the ultraviolet rays is 0.5-2 milliwatts per square centimeter;
  • step S50 the copper-molybdenum film layer is etched by using an etching solution.
  • the wavelength of the ultraviolet light is 200-390 nm.
  • the concentration of the ozone in the etching device is 0.05 to 10 mg per liter.
  • the etching temperature of the etching solution is 25 to 35 degrees Celsius.
  • the etching solution includes hydrogen peroxide, an organic acid, a regulator, an inorganic salt, a chelating agent, an inhibitor, and deionized water, which are uniformly mixed.
  • the mass fraction of the hydrogen peroxide is 5% to 10%
  • the mass fraction of the organic acid is 3% to 10%.
  • the mass fraction of the regulator is 0.1% ⁇ 3%
  • the mass fraction of the inorganic salt is 0.1% ⁇ 5%
  • the mass fraction of the inorganic salt is 0.1% ⁇ 5%
  • the mass fraction of the chelating agent It is 0.5% to 7%
  • the mass fraction of the inhibitor is 0.001% to 1%
  • the balance is the deionized water.
  • the invention also provides an etching device for a copper-molybdenum film layer, including:
  • a stage is arranged at the bottom of the cavity and is used for carrying the substrate to be etched;
  • An etching liquid spray head is arranged on the top of the cavity and is used for spraying an etching liquid
  • An ultraviolet lamp provided at an upper portion of the cavity
  • An ozone filling port is arranged on the cavity.
  • the ultraviolet light emitted by the ultraviolet lamp has a wavelength of 200 to 390 nanometers, and the irradiation intensity of the ultraviolet light is 0.5 to 2 milliwatts per square centimeter.
  • the ozone filling port is used to fill ozone inside the cavity, and the concentration of the ozone in the cavity is 0.05-10 mg per liter.
  • the invention provides another etching method for a copper-molybdenum film layer, including:
  • Step S10 forming a copper-molybdenum film layer on the substrate
  • Step S20 forming a photoresist in a predetermined pattern on the copper-molybdenum film layer
  • Step S30 placing the substrate on which the photoresist is formed into an etching device
  • Step S40 irradiate the inside of the etching device with ultraviolet rays, and fill the etching device with ozone;
  • step S50 the copper-molybdenum film layer is etched by using an etching solution.
  • the wavelength of the ultraviolet light is 200-390 nm.
  • the concentration of the ozone in the etching device is 0.05 to 10 mg per liter.
  • the etching temperature of the etching solution is 25 to 35 degrees Celsius.
  • the etching solution includes hydrogen peroxide, an organic acid, a regulator, an inorganic salt, a chelating agent, an inhibitor, and deionized water, which are uniformly mixed.
  • the mass fraction of the hydrogen peroxide is 5% to 10%
  • the mass fraction of the organic acid is 3% to 10%.
  • the mass fraction of the regulator is 0.1% ⁇ 3%
  • the mass fraction of the inorganic salt is 0.1% ⁇ 5%
  • the mass fraction of the inorganic salt is 0.1% ⁇ 5%
  • the mass fraction of the chelating agent It is 0.5% to 7%
  • the mass fraction of the inhibitor is 0.001% to 1%
  • the balance is the deionized water.
  • the etching method and the etching device for the copper-molybdenum film layer provided by the present invention can improve the etching efficiency and productivity, and can also reduce the amount of the etching solution, thereby reducing the etching solution. the cost of.
  • FIG. 1 is a flowchart of steps of an etching method for a copper-molybdenum film layer according to the present invention
  • FIG. 2 is an electron microscope inspection diagram of the etching of the copper-molybdenum film layer according to the first embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of an etching device for a copper-molybdenum film layer according to the present invention.
  • the present invention is directed to the existing etching solution. Because the rate of oxidation of copper and molybdenum with hydrogen peroxide in the etching solution is slow, the etching efficiency is low, which further affects the problem of productivity. This embodiment can solve this defect.
  • the etching method of the copper-molybdenum film layer provided in this embodiment includes:
  • Step S10 forming a copper-molybdenum film layer on the substrate
  • the substrate may be a glass substrate, and the copper-molybdenum film layer is deposited on the glass substrate by a physical vapor deposition method. Specifically, a molybdenum film is deposited on the surface of the substrate, and then a copper film is deposited on the surface of the molybdenum film.
  • a molybdenum film is deposited on the surface of the substrate, and then a copper film is deposited on the surface of the molybdenum film.
  • the role of molybdenum has been mentioned in the background art of this specification and will not be repeated here.
  • Step S20 forming a photoresist in a predetermined pattern on the copper-molybdenum film layer
  • a photoresist film layer is coated on the surface of the copper-molybdenum film layer, and then the photoresist film layer in a set area is exposed and developed by using a mask, and a part of the photoresist is removed, and finally a predetermined pattern is obtained. Photoresist.
  • Step S30 placing the substrate on which the photoresist is formed in an etching device
  • the etching device is a sealing device.
  • Step S40 irradiate the inside of the etching device with ultraviolet rays, and fill the etching device with ozone;
  • the wavelength of the ultraviolet rays is 200 to 390 nanometers
  • the irradiation intensity is 0.5 to 2 milliwatts per square centimeter
  • the ozone concentration in the etching device is 0.05 to 10 milligrams per liter.
  • Step S50 etching the copper-molybdenum film layer using an etching solution
  • the etching temperature of the etching solution is 25 to 35 degrees Celsius.
  • the etching solution includes hydrogen peroxide, organic acids, regulators, inorganic salts, chelating agents, inhibitors, and deionized water, which are mixed uniformly.
  • the mass fraction of the hydrogen peroxide is 5% to 10%
  • the mass fraction of the organic acid is 3% to 10%
  • the mass fraction of the regulator is 0.1% ⁇ 3%
  • the mass fraction of the inorganic salt is 0.1% ⁇ 5%
  • the mass fraction of the inorganic salt is 0.1% ⁇ 5%
  • the mass fraction of the chelating agent is 0.5% ⁇ 7%
  • the The mass fraction of the inhibitor is 0.001% to 1%
  • the balance is the deionized water.
  • the organic acid is acetic acid, glycolic acid, 2-hydroxypropane-1,2,3-tricarboxylic acid, benzoic acid, oxalic acid, succinic acid, 2,3-dihydroxysuccinic acid, 2 -Any one or more combinations of hydroxysuccinic acid, 2-hydroxypropionic acid, and phthalic acid.
  • the regulator is any one or more of diisopropanolamine, polyacrylamide, m-phenylenediamine, p-chloroaniline, and monoisopropanolamine.
  • the inorganic salt is any one or more of sodium chloride, magnesium chloride, potassium chloride, sodium sulfate, magnesium sulfate, potassium sulfate, sodium nitrate, magnesium nitrate, potassium nitrate, sodium acetate, magnesium acetate, and potassium acetate. combination.
  • the chelating agent is any one or more combinations of sodium stannate, sodium pyrophosphate, 8-hydroxyquinoline, and chitosan.
  • the inhibitor is 6-nitrobenzimidazole, 2-aminothiazole, 2-amino-5-nitrothiazole, 5-aminotetrazole, 3-amino-1,2,4-triazole, phenylhydrazone
  • 6-nitrobenzimidazole 2-aminothiazole, 2-amino-5-nitrothiazole, 5-aminotetrazole, 3-amino-1,2,4-triazole, phenylhydrazone
  • Hydrogen peroxide in the etching solution can generate hydroxyl radicals during the irradiation of ultraviolet rays, and hydroxyl radicals are an important reactive oxygen species with strong electronic ability, that is, oxidation ability, which is second only in nature.
  • the oxidizing agent for fluorine through the coordinated oxidation reaction of electron beam and hydrogen peroxide, oxidizes copper and molybdenum.
  • ultraviolet rays can enhance the ability of copper and molybdenum hydroxide to accelerate the reaction rate, thereby improving the etching efficiency.
  • Ozone is a strong oxidant. Oxidation of copper and molybdenum in cooperation with hydrogen peroxide can also improve the etching efficiency. On the other hand, while increasing the hydrogen peroxide capacity, it can reduce the amount of each component in the etching solution and reduce The cost of the etching solution is also conducive to improving the safety of the etching solution during production, storage and transportation.
  • the organic acid in this example is 2-hydroxypropane-1,2,3-tricarboxylic acid
  • the regulator is diisopropanolamine
  • the chelating agent is 8-hydroxyquinoline
  • the inorganic salt is sodium chloride
  • the inhibitor For benzotriazole.
  • the total mass fraction of each component in the etching solution is: hydrogen peroxide 6%, 2-hydroxypropane-1,2,3-tricarboxylic acid 7%, diisopropanolamine 3.5%, and 8-hydroxyquinoline 1.5 %, Sodium chloride 0.1%, benzotriazole 0.01%, deionized water 81.89%.
  • the etching speed of the copper-molybdenum film layer is controlled by adjusting the ultraviolet light intensity, light time, and ozone concentration.
  • the etching temperature is 30 degrees Celsius, and the ultraviolet wavelength is 253.7 nanometers.
  • the lamp was irradiated with an irradiation intensity of 1.0 milliwatt per cubic centimeter, and ozone was charged into the etching device so that the ozone concentration in the device was 0.4 mg per liter.
  • a scanning electron microscope is used to observe the film layer during the etching process, and the cone angle of the end portion of the etched copper-molybdenum film layer (the side surface of the copper-molybdenum film layer and the plane on which the substrate is located) is obtained.
  • the included angle is 51.9 degrees.
  • CD Loss (the stripe loss of the metal wire, the length of the etched copper-molybdenum film layer under the orthographic projection of the photoresist) is 1.048 microns, and there is no trace of residual molybdenum. Generally, it is etched. Rear cone angle range is 30 ⁇ 60 degrees, CD Loss is less than 1.2 microns, and the etching effect is better.
  • the present invention also provides an etching device 10 for copper-molybdenum, including: a sealed cavity 11; a stage 12; and an etching liquid nozzle 15 UV lamp 13; ozone filling port 14.
  • the stage 12 is disposed at the bottom of the cavity and is used to carry a substrate 17 to be etched.
  • the substrate is a glass substrate with a copper-molybdenum film layer deposited thereon, and a predetermined pattern is formed on the surface of the copper-molybdenum film layer.
  • a photoresist is used to protect a copper-molybdenum film layer in a predetermined area from being etched.
  • the ultraviolet lamps 13 are arranged on the cavity 11, preferably on the upper part of the cavity 11. A plurality of the ultraviolet lamps 13 may be arranged at intervals. The specific number is determined by the actual etching device size.
  • the ultraviolet lamp 13 can perform uniform ultraviolet radiation on the inside of the cavity.
  • the etching liquid spray head 15 is disposed on the top of the cavity 11, and is preferably disposed directly above the substrate 17, so that the sprayed etching liquid is evenly distributed on the substrate 17.
  • the ozone filling port 14 is provided on the cavity 11, preferably on a side wall of the cavity.
  • the height of the ozone filling port 14 is between the etching liquid nozzle 15 and the Between the substrates 17, the ozone injected from the ozone filling port 14 can fully act on the hydrogen peroxide in the etching solution.
  • the ultraviolet light emitted by the ultraviolet lamp 13 has a wavelength of 200 to 390 nanometers, an irradiation intensity of 0.5 to 2 milliwatts per cubic centimeter, and a concentration of the ozone in the cavity 11 is 0.05 to 10 mg per liter.
  • the temperature at which the etching solution acts on the surface of the substrate 17 is 25-35 degrees Celsius, and the ultraviolet irradiation time is at least 5 minutes.
  • the speed of the copper-molybdenum etching makes the copper-molybdenum film layer have a suitable etching profile, and Control on the corresponding CD Under Loss, no molybdenum remains.
  • the etching method and the etching device for the copper-molybdenum film layer provided by the present invention can improve the etching efficiency and productivity, and can also reduce the amount of etching solution, thereby reducing the cost of the etching solution.

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  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

一种用于铜钼膜层的刻蚀方法，包括：在基板上形成铜钼膜层（S10）；在铜钼膜层上形成预定图案的光刻胶（S20）；将形成有光刻胶的基板置于刻蚀装置中（S30）；对刻蚀装置内部进行紫外线照射，以及向刻蚀装置内充注臭氧（S40）；利用刻蚀液对铜钼膜层进行刻蚀（S50）。该方法能够提高刻蚀效率和产能，也能够减少刻蚀液的用量，进而降低刻蚀液的成本。还提供一种用于铜钼膜层的刻蚀装置。

Description

用于铜钼膜层的刻蚀方法及刻蚀装置 技术领域
本发明涉及铜制程刻蚀领域，尤其涉及一种用于铜钼膜层的刻蚀方法及刻蚀装置。
 背景技术
随着显示器尺寸的增大，与薄膜晶体管连接的栅极线和数据线等金属配线的长度会增加，随之金属配线的电阻会增加，会产生信号延迟等问题，目前通常采用铜金属来制作栅极及数据金属配线，相较于铝金属，铜的电阻值更低，性能优异，不需要达到铝导线的宽度要求，就能提高显示器的穿透度和背光源的使用效率，因此铜金属更加适合高分辨率面板的制作。
在TFT-LCD中铜制程图案的形成过程包括：先在基板上形成铜钼膜层，再在铜钼膜层上形成预定图案的光刻胶，最后利用刻蚀液对铜钼膜层进行刻蚀，以形成预定图案的金属配线。其中，钼的作用为增加铜与基板的贴附性，阻止铜向基板的未指定区域扩散。但是，传统的刻蚀液中含有氟化物，对基板和环境都具有腐蚀性，且刻蚀效率低、稳定性差。
 技术问题
本发明提供一种用于铜钼膜层的刻蚀方法及刻蚀装置，以解决现有的刻蚀液中的过氧化氢的氧化铜钼的速率较慢，导致刻蚀效率低下，进而影响显示面板的产能的问题。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种铜钼膜层的刻蚀方法，包括：
步骤S10，在基板上形成铜钼膜层；
步骤S20，在所述铜钼膜层上形成预定图案的光刻胶；
步骤S30，将形成有所述光刻胶的基板置于刻蚀装置中；
步骤S40，对所述刻蚀装置内部进行紫外线照射，以及向所述刻蚀装置内充注臭氧，其中，所述紫外线的照射强度为0.5~2毫瓦每平方厘米；
步骤S50，利用刻蚀液对所述铜钼膜层进行刻蚀。
在本发明的至少一种实施例中，所述步骤S40中，所述紫外线的波长为200~390纳米。
在本发明的至少一种实施例中，所述步骤S40中，所述刻蚀装置内的所述臭氧的浓度为0.05~10毫克每升。
在本发明的至少一种实施例中，所述步骤S50中，所述刻蚀液的刻蚀温度为25~35摄氏度。
在本发明的至少一种实施例中，所述刻蚀液包括混合均匀的过氧化氢、有机酸、调节剂、无机盐、螯合剂、抑制剂、以及去离子水。
在本发明的至少一种实施例中，相对于所述刻蚀液的整体质量，所述过氧化氢的质量分数为5%~10%，所述有机酸的质量分数为3%~10%，所述调节剂的质量分数为0.1%~3%，所述无机盐的质量分数为0.1%~5%，所述无机盐的质量分数为0.1%~5%，所述螯合剂的质量分数为0.5%~7%，所述抑制剂的质量分数为0.001%~1%，余量为所述去离子水。
本发明还提供一种用于铜钼膜层的刻蚀装置，包括：
密封的腔体；
载物台，设置于所述腔体底部，用以承载待刻蚀的基板；
刻蚀液喷头，设置于所述腔体的顶部，用以喷射出刻蚀液；
紫外灯，设置于所述腔体的上部；
臭氧充注口，设置于所述腔体上。
在本发明的至少一种实施例中，所述紫外灯的照射出的紫外光的波长为200~390纳米，所述紫外光的照射强度为0.5~2毫瓦每平方厘米。
在本发明的至少一种实施例中，所述臭氧充注口用以向所述腔体内部充入臭氧，所述腔体内的所述臭氧的浓度为0.05~10毫克每升。
本发明提供另一种用于铜钼膜层的刻蚀方法，包括：
步骤S10，在基板上形成铜钼膜层；
步骤S20，在所述铜钼膜层上形成预定图案的光刻胶；
步骤S30，将形成有所述光刻胶的基板置于刻蚀装置中；
步骤S40，对所述刻蚀装置内部进行紫外线照射，以及向所述刻蚀装置内充注臭氧；
步骤S50，利用刻蚀液对所述铜钼膜层进行刻蚀。
在本发明的至少一种实施例中，所述步骤S40中，所述紫外线的波长为200~390纳米。
在本发明的至少一种实施例中，所述步骤S40中，所述刻蚀装置内的所述臭氧的浓度为0.05~10毫克每升。
在本发明的至少一种实施例中，所述步骤S50中，所述刻蚀液的刻蚀温度为25~35摄氏度。
在本发明的至少一种实施例中，所述刻蚀液包括混合均匀的过氧化氢、有机酸、调节剂、无机盐、螯合剂、抑制剂、以及去离子水。
在本发明的至少一种实施例中，相对于所述刻蚀液的整体质量，所述过氧化氢的质量分数为5%~10%，所述有机酸的质量分数为3%~10%，所述调节剂的质量分数为0.1%~3%，所述无机盐的质量分数为0.1%~5%，所述无机盐的质量分数为0.1%~5%，所述螯合剂的质量分数为0.5%~7%，所述抑制剂的质量分数为0.001%~1%，余量为所述去离子水。
 有益效果
本发明的有益效果为：本发明提供的用于铜钼膜层的刻蚀方法和刻蚀装置，能够提高刻蚀效率和产能，另外，也能够减少刻蚀液的用量，进而降低刻蚀液的成本。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明的用于铜钼膜层的刻蚀方法的步骤流程图；
图2为本发明的实施例一的铜钼膜层刻蚀的电镜检测图；
图3为本发明的用于铜钼膜层的刻蚀装置的结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明针对现有的刻蚀液，由于刻蚀液中的双氧水氧化铜钼的速率较慢，导致刻蚀效率低下，进而影响产能的问题，本实施例能够解决该缺陷。
如图1所示，本实施例提供的铜钼膜层的刻蚀方法，包括：
步骤S10，在基板上形成铜钼膜层；
其中，所述基板可为玻璃基板，通过物理气相沉积法在玻璃基板上沉积所述铜钼膜层，具体地，先在所述基板表面沉积钼薄膜，再在该钼薄膜表面沉积铜薄膜，钼的作用已在本说明书的背景技术中提及，这里不再赘述。
步骤S20，在所述铜钼膜层上形成预定图案的光刻胶；
其中，先在所述铜钼膜层表面涂布光刻胶膜层，然后利用掩膜板对设定区域的该光刻胶膜层进行曝光、显影，去除部分光刻胶，最后得到预定图案的光刻胶。
步骤S30，将形成有所述光刻胶的所述基板置于刻蚀装置中；
其中，所述刻蚀装置为密封装置。
步骤S40，对所述刻蚀装置内部进行紫外线照射，以及向所述刻蚀装置内充注臭氧；
其中，所述紫外线的波长为200~390纳米，照射强度为0.5~2毫瓦每平方厘米，所述刻蚀装置内的臭氧浓度为0.05~10毫克每升。
步骤S50，利用刻蚀液对所述铜钼膜层进行刻蚀；
其中，所述刻蚀液的刻蚀温度为25~35摄氏度。
所述刻蚀液包括混合均匀的过氧化氢、有机酸、调节剂、无机盐、螯合剂、抑制剂、以及去离子水。
其中，相对于所述刻蚀液的整体质量，所述过氧化氢的质量分数为5%~10%，所述有机酸的质量分数为3%~10%，所述调节剂的质量分数为0.1%~3%，所述无机盐的质量分数为0.1%~5%，所述无机盐的质量分数为0.1%~5%，所述螯合剂的质量分数为0.5%~7%，所述抑制剂的质量分数为0.001%~1%，余量为所述去离子水。
具体的，所述有机酸为乙酸、羟基乙酸、2-羟基丙烷-1,2,3-三羧酸、苯甲酸、乙二酸、丁二酸、2,3-二羟基丁二酸、2－羟基丁二酸、2-羟基丙酸、以及邻苯二甲酸中的任意一种或多种组合。
所述调节剂为二异丙醇胺、聚丙烯酰胺、间苯二胺、对氯苯胺、以及一异丙醇胺中的任意一种或多种组合。
所述无机盐为氯化钠、氯化镁、氯化钾、硫酸钠、硫酸镁、硫酸钾、硝酸钠、硝酸镁、硝酸钾、醋酸钠、乙酸镁、以及乙酸钾中任意的一种或多种组合。
所述螯合剂为锡酸钠、焦磷酸钠、8-羟基喹啉、以及壳聚糖中的任意一种或多种组合。
所述抑制剂为6-硝基苯并咪唑、2-氨基噻唑、2-氨基-5-硝基噻唑、5-氨基四氮唑、 3-氨基-1,2,4-三唑、苯骈三氮唑、苯并三唑、三唑氮钠、以及疏基苯并三氮唑中的一种或多种组合。
所述刻蚀液中的过氧化氢在紫外线的辐照过程中能够产生羟基自由基，而羟基自由基是一种重要的活性氧，具有极强的电子能力即氧化能力，是自然界中仅次于氟的氧化剂，通过电子束和过氧化氢的协同氧化反应，氧化铜钼，简单来说，紫外线可以增强过氧化氢氧化铜钼的能力，加快反应速率，进而提高刻蚀效率。
臭氧是强氧化剂，与过氧化氢协同对铜钼进行氧化，也可提高刻蚀效率，另一方面，在增加过氧化氢氧化能力的同时，可减少刻蚀液中各组分的用量，降低刻蚀液的成本，也有利于提高刻蚀液在生产、储存以及运输当面的安全性。
本实施例中的有机酸为2-羟基丙烷-1,2,3-三羧酸，调节剂为二异丙醇胺，螯合剂为8-羟基喹啉，无机盐为氯化钠，抑制剂为苯骈三氮唑。
各组分占刻蚀液的总体质量分数为：过氧化氢6%、2-羟基丙烷-1,2,3-三羧酸7%、二异丙醇胺3.5%、8-羟基喹啉1.5%、氯化钠0.1%、苯骈三氮唑0.01%、去离子水81.89%。
在刻蚀过程中，通过调节紫外线的光照强度、光照时间、以及臭氧的浓度来控制铜钼膜层的刻蚀速度，在本实施中，刻蚀温度为30摄氏度，用波长为253.7纳米的紫外灯照射，照射强度为1.0毫瓦每立方厘米，向所述刻蚀装置内充注臭氧，使得装置内的臭氧浓度为0.4毫克每升。
如图2所示，利用扫描电子显微镜对刻蚀过程中的膜层进行观察，得到刻蚀后的铜钼膜层的端部的锥角（铜钼膜层的侧面与基板所在的平面形成的夹角）为51.9度，CD Loss（金属线的条宽损失，光刻胶正投影下的被刻蚀掉的铜钼膜层的长度）为1.048微米，且没有钼残留的痕迹，一般刻蚀后的锥角范围为30~60度，CD Loss为1.2微米以下，刻蚀效果较好。
如图3所示，基于上述的用于铜钼的刻蚀方法，本发明还提供一种铜钼的刻蚀装置10，包括：密封的腔体11；载物台12；刻蚀液喷头15；紫外灯13；臭氧充注口14。
所述载物台12设置于所述腔体的底部，用以承载待刻蚀的基板17，所述基板为沉积有铜钼膜层的玻璃基板，且铜钼膜层表面形成有预定图案的光刻胶，用以保护设定区域的铜钼膜层不被刻蚀。
所述紫外灯13设置于所述腔体11上，较佳地设置于所述腔体11的上部，所述紫外灯13可间隔设置多个，具体数量以实际刻蚀装置大小来确定，所述紫外灯13可对所述腔体内部进行均匀的紫外线的辐射。
所述刻蚀液喷头15设置于所述腔体11的顶部，较佳地设置于所述基板17的正上方，使得喷射出的刻蚀液均匀的分布在所述基板17上。
所述臭氧充注口14设置于所述腔体11上，较佳地设置于所述腔体的侧壁上，所述臭氧充注口14所在的高度处于所述刻蚀液喷头15与所述基板17之间，使得所述臭氧充注口14注入的臭氧充分的作用在所述刻蚀液中的过氧化氢上。
所述紫外灯13辐射出的紫外线波长为200~390纳米，照射强度为0.5~2毫瓦每立方厘米，所述腔体11内部的所述臭氧的浓度为0.05~10毫克每升。
在进行铜钼膜层刻蚀时，所述刻蚀液作用在所述基板17表面的温度为25~35摄氏度，所述紫外线的辐照时间至少在5分钟以上。
通过控制所述刻蚀装置在铜钼刻蚀过程中的紫外线的强度和辐照时间、以及臭氧的浓度来控制，铜钼刻蚀的速度，使得铜钼膜层具有合适的刻蚀轮廓，并且控制在相应的CD Loss下，没有钼残留。
有益效果：本发明提供的用于铜钼膜层的刻蚀方法和刻蚀装置，能够提高刻蚀效率和产能，另外，也能够减少刻蚀液的用量，进而降低刻蚀液的成本。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (15)

  1. 一种用于铜钼膜层的刻蚀方法，其中，包括：
    步骤S10，在基板上形成铜钼膜层；
    步骤S20，在所述铜钼膜层上形成预定图案的光刻胶；
    步骤S30，将形成有所述光刻胶的基板置于刻蚀装置中；
    步骤S40，对所述刻蚀装置内部进行紫外线照射，以及向所述刻蚀装置内充注臭氧，其中，所述紫外线的照射强度为0.5~2毫瓦每平方厘米；
    步骤S50，利用刻蚀液对所述铜钼膜层进行刻蚀。
  2. 根据权利要求1所述的刻蚀方法，其中，所述步骤S40中，所述紫外线的波长为200~390纳米。
  3. 根据权利要求1所述的刻蚀方法，其中，所述步骤S40中，所述刻蚀装置内的所述臭氧的浓度为0.05~10毫克每升。
  4. 根据权利要求1所述的刻蚀方法，其中，所述步骤S50中，所述刻蚀液的刻蚀温度为25~35摄氏度。
  5. 根据权利要求1所述的刻蚀方法，其中，所述刻蚀液包括混合均匀的过氧化氢、有机酸、调节剂、无机盐、螯合剂、抑制剂、以及去离子水。
  6. 根据权利要求5所述的刻蚀方法，其中，相对于所述刻蚀液的整体质量，所述过氧化氢的质量分数为5%~10%，所述有机酸的质量分数为3%~10%，所述调节剂的质量分数为0.1%~3%，所述无机盐的质量分数为0.1%~5%，所述无机盐的质量分数为0.1%~5%，所述螯合剂的质量分数为0.5%~7%，所述抑制剂的质量分数为0.001%~1%，余量为所述去离子水。
  7. 一种用于铜钼膜层的刻蚀装置，其中，包括：
    密封的腔体；
    载物台，设置于所述腔体底部，用以承载待刻蚀的基板；
    刻蚀液喷头，设置于所述腔体的顶部，用以喷射出刻蚀液；
    紫外灯，设置于所述腔体的上部；
    臭氧充注口，设置于所述腔体上。
  8. 根据权利要求7所述的刻蚀装置，其中，所述紫外灯的照射出的紫外光的波长为200~390纳米，所述紫外光的照射强度为0.5~2毫瓦每平方厘米。
  9. 根据权利要求7所述的刻蚀装置，其中，所述臭氧充注口用以向所述腔体内部充入臭氧，所述腔体内的所述臭氧的浓度为0.05~10毫克每升。
  10. 一种用于铜钼膜层的刻蚀方法，其中，包括：
    步骤S10，在基板上形成铜钼膜层；
    步骤S20，在所述铜钼膜层上形成预定图案的光刻胶；
    步骤S30，将形成有所述光刻胶的基板置于刻蚀装置中；
    步骤S40，对所述刻蚀装置内部进行紫外线照射，以及向所述刻蚀装置内充注臭氧；
    步骤S50，利用刻蚀液对所述铜钼膜层进行刻蚀。
  11. 根据权利要求10所述的刻蚀方法，其中，所述步骤S40中，所述紫外线的波长为200~390纳米。
  12. 根据权利要求10所述的刻蚀方法，其中，所述步骤S40中，所述刻蚀装置内的所述臭氧的浓度为0.05~10毫克每升。
  13. 根据权利要求10所述的刻蚀方法，其中，所述步骤S50中，所述刻蚀液的刻蚀温度为25~35摄氏度。
  14. 根据权利要求10所述的刻蚀方法，其中，所述刻蚀液包括混合均匀的过氧化氢、有机酸、调节剂、无机盐、螯合剂、抑制剂、以及去离子水。
  15. 根据权利要求14所述的刻蚀方法，其中，相对于所述刻蚀液的整体质量，所述过氧化氢的质量分数为5%~10%，所述有机酸的质量分数为3%~10%，所述调节剂的质量分数为0.1%~3%，所述无机盐的质量分数为0.1%~5%，所述无机盐的质量分数为0.1%~5%，所述螯合剂的质量分数为0.5%~7%，所述抑制剂的质量分数为0.001%~1%，余量为所述去离子水。
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