WO2020040386A1 - Composition d'agent de gravure de film isolant et procédé de formation de motif l'utilisant - Google Patents

Composition d'agent de gravure de film isolant et procédé de formation de motif l'utilisant Download PDF

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WO2020040386A1
WO2020040386A1 PCT/KR2019/002184 KR2019002184W WO2020040386A1 WO 2020040386 A1 WO2020040386 A1 WO 2020040386A1 KR 2019002184 W KR2019002184 W KR 2019002184W WO 2020040386 A1 WO2020040386 A1 WO 2020040386A1
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silane compound
group
formula
insulating film
passivation
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PCT/KR2019/002184
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English (en)
Korean (ko)
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이은정
김정환
윤성웅
이동규
이태경
정명일
최한영
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동우화인켐 주식회사
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Publication of WO2020040386A1 publication Critical patent/WO2020040386A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Definitions

  • the present invention relates to an insulating film etching liquid composition and a pattern forming method using the same. More specifically, the present invention relates to an inorganic acid-based insulating film etching solution composition and a pattern forming method using the same.
  • a thin film transistor (TFT) and various pixel circuits are arranged on a back-plane substrate of an image display device such as a liquid crystal display (LCD) device or an organic light emitting display (OLED) display device.
  • Insulation layers such as an interlayer insulating film, a gate insulating film, a via insulating film, and the like that insulate the conductive structures are formed.
  • insulating films such as an element isolation film, an interlayer insulating film, a gate insulating film, and the like are formed on a silicon or germanium substrate.
  • the insulating layers may be deposited to include silicon oxide or silicon nitride to include a silicon oxide layer and a silicon nitride layer.
  • etching may be selectively performed on a specific layer. For example, a selective etching process for the silicon nitride film may be required. In this case, an etchant composition for etching only the silicon nitride film may be used while sufficiently protecting the silicon oxide film.
  • the protection performance of the silicon oxide film is continuously maintained.
  • Korean Patent Publication No. 10-0823461 discloses a composition capable of etching a silicon oxide film and a silicon nitride film together. It is difficult to implement the above-described selective etching process.
  • One object of the present invention is to provide an insulating film etchant composition having improved etching selectivity and etching uniformity.
  • One object of the present invention is to provide a pattern forming method using the insulating film etching solution composition.
  • a first silane compound including a silane compound in which two or more alkyl groups including a methyl group or an ethyl group and a passivation group are substituted;
  • a second silane compound comprising a silane compound in which all of the substitution sites of the silicon atoms are all substituted with a passivation group; And excess water.
  • the passivation group including at least one selected from the group consisting of halogen atoms, hydroxy groups, alkoxy groups, acetoxy groups and amine groups other than fluorine, insulating film etching liquid composition.
  • the first silane compound comprises a silane compound represented by any one of the following formulas 1 to 3, insulating film etching solution composition:
  • R ⁇ 1> -R ⁇ 3> is respectively independently a methyl group or an ethyl group, n is an integer of 1 or 2, and when n is 1, X ⁇ 1> is a halogen element except a fluorine, and an alkoxy group of 1-4 carbon atoms. Or an acetoxy group and when n is 2, X 1 is a secondary amine group)
  • R ⁇ 4> and R ⁇ 5> are respectively independently a methyl group or an ethyl group
  • X ⁇ 2> and X ⁇ 3> are each independently a halogen element except a fluorine, the alkoxy group or the acetoxy group of C1-C4.
  • R ⁇ 6> and R ⁇ 7> is respectively independently a methyl group or an ethyl group, n is an integer of 3-8.
  • silane compound of the fully substituted silane compound comprises a monopodal silane compound or a dipodal silane compound, insulating film etching solution composition.
  • X 4 to X 7 are each independently a halogen element except fluorine, an alkoxy group having 1 to 4 carbon atoms, or an acetoxy group.
  • X ⁇ 9> -X ⁇ 14> is respectively independently a halogen element except fluorine, the alkoxy group of C1-C4, an acetoxy group, or a phosphoric acid group, and Y is a C1-C4 alkylene group.
  • the insulating film etchant composition is contained in a weight ratio of 1: 1 to 1:50.
  • the second silane compound is contained in an amount of 0.01 to 1% by weight, the first silane compound is contained in an amount of 0.1 to 10% by weight, the insulating film etching liquid composition.
  • the second silane compound and the first silane compound are used together. Therefore, it is possible to prevent the gelation of the etchant with an excellent passivation effect.
  • the second silane compound and the first silane compound may be substantially completely dissolved in an aqueous solution of phosphoric acid, and may be excellent in phosphoric acid compatibility.
  • the etching performance of the etchant can be prevented from being lowered.
  • the insulating film etching composition according to the exemplary embodiments may be effectively used in the selective etching process of the nitride film to etch the silicon nitride film while suppressing the etching of the silicon oxide film.
  • 1 to 3 are schematic cross-sectional views for describing a method of forming a pattern according to example embodiments.
  • 4 to 6 are schematic cross-sectional views for describing a method of forming a pattern according to example embodiments.
  • the insulating film etchant composition of embodiments of the present invention includes phosphoric acid, a first silane compound, a second silane compound, and excess water.
  • the silicon oxide film can be passivated effectively, and the gelation phenomenon can be effectively suppressed.
  • it provides a pattern forming method using the etchant composition.
  • the insulating film etching composition may include phosphoric acid, a first silane compound including a passivation group in a silicon atom, and a silane compound in which two or more alkyl groups are substituted, and all substitution sites of the silicon atom are substituted with a passivation group.
  • the insulating film etching composition is supplied onto a structure including an oxide film (eg, silicon oxide film) and a nitride film (eg, silicon nitride film) at the same time to etch only the nitride film at a high selectivity without substantially damaging the oxide film.
  • an oxide film eg, silicon oxide film
  • a nitride film eg, silicon nitride film
  • the insulating film etching composition may be used to selectively etch the silicon nitride film in the manufacturing process of the semiconductor device.
  • Phosphoric acid may be represented, for example, by the chemical formula of H 3 PO 4 , and may serve as a main etching component for nitride film etching.
  • the insulating film etching composition may include about 80 to about 95 wt% of phosphoric acid by weight percent of the total weight of the composition.
  • the overall etching rate may be lowered.
  • the etching rate of not only the nitride film but also the conductive film such as the oxide film or the metal film may increase together, thereby reducing the etching selectivity of the nitride film.
  • the phosphoric acid content may be adjusted to about 80 to 90% by weight in consideration of the etching rate and the selectivity.
  • the first silane compound may include a silane compound in which two or more alkyl groups including a methyl group or an ethyl group and a passivation group are substituted.
  • the first silane compound is excellent in phosphoric acid compatibility and can effectively inhibit the gelation phenomenon.
  • the oxide film may be passivated to protect it in an etching process.
  • the said 1st silane compound can suppress the gelation phenomenon of a 2nd silane compound.
  • phosphate compatibility means that the silane compound is substantially homogeneously dissolved in the aqueous solution of phosphoric acid, and does not readily produce siloxane compound particles by gelation.
  • 1 g of a silane compound is added to 100 g of an aqueous 85% phosphoric acid solution, and after stirring for 1 minute at room temperature, it can be evaluated by the phase separation when left at room temperature for 1 minute.
  • the silane compound may mean a compound in which hydrogen or substituents are connected to the silicon atom using a silicon atom as a center atom.
  • the silicon atom may have four bonding sites. Thus, up to three alkyl groups may be substituted.
  • the first silane compound may be a compound in which a passivation group and two or more alkyl groups are directly connected to the silicon atom.
  • it may be a compound in which one passivation group and three alkyl groups are directly connected to the silicon atom, and may be a compound in which two passivation groups and two alkyl groups are directly connected to the silicon atom.
  • the passivation group may include at least one selected from the group consisting of halogen atoms, hydroxy groups, alkoxy groups, acetoxy (-OAc) groups, and amine groups other than fluorine.
  • the passivation group may passivate the silicon oxide layer to protect the passivation layer from being etched in the etching process.
  • the passivation group may be hydrolyzed in an aqueous solution of phosphoric acid to dissociate into a silanol group (Si-OH).
  • Si-OH silanol group
  • halogen atoms other than fluorine, hydroxy groups, alkoxy groups, acetoxy groups and amine groups can be hydrolyzed to dissociate into silanol groups.
  • the silanol group may passivate the silicon oxide film.
  • the silanol group may be condensed with a silanol group of an adjacent silane compound to form a polymer.
  • the condensation reaction may cause gelation of the etchant composition.
  • the number of silanol groups is limited to two or less, so that the condensation reaction may be limited. Thus, gelation can be effectively suppressed.
  • the first condensation reaction of the second silane compound may be stopped.
  • the first silane compound may be used as an end-capping agent of the second silane compound. Therefore, gelation of the entire second silane compound and the etchant composition can be prevented.
  • the silicon oxide film may be etched. Therefore, the nitride film etching selectivity of the etchant composition may be reduced.
  • the insulating film etching composition may not include a fluorine-containing compound.
  • etching damage of the oxide film (for example, silicon oxide film) by the fluorine component can be prevented. Therefore, the nitride film etching selectivity can be improved.
  • the composition according to the exemplary embodiments of the present invention may be a non-fluorine-based insulating film etchant composition.
  • the alkyl group may include a methyl group or an ethyl group.
  • the first silane compound may be dissolved in an aqueous solution of phosphoric acid.
  • the solubility of the first silane compound in an aqueous solution of phosphoric acid may be significantly reduced, and the passivation effect and gelling inhibition property of the etchant composition may be significantly reduced.
  • the first silane compound may include a silane compound represented by any one of Formulas 1 to 3 below.
  • the silane compound represented by any one of Formulas 1 to 3 may be provided as a silane compound in which a passivation group and two or more alkyl groups are substituted on the silicon atom.
  • R 1 to R 3 are each independently a methyl group or an ethyl group, n is an integer of 1 or 2, when n is 1, X 1 is a halogen element except fluorine, an alkoxy group having 1 to 4 carbon atoms or When n is 2, X 1 may be a secondary amine group.
  • R 4 and R 5 are each independently a methyl group or an ethyl group, and X 2 and X 3 may each independently be a halogen element except for fluorine, an alkoxy group having 1 to 4 carbon atoms, or an acetoxy group.
  • R 6 and R 7 are each independently a methyl group or an ethyl group, n may be an integer of 3 to 8.
  • the compounds represented by Chemical Formulas 1 to 3 may be used alone, or two or more thereof may be mixed and used.
  • the compounds represented by Chemical Formulas 1 to 3 include two or three alkyl groups, and the alkyl group may be a methyl group or an ethyl group. Therefore, it can be effectively dissolved in the aqueous solution of phosphoric acid, the condensation reaction is limited and the gelation phenomenon can be suppressed.
  • a passivation group may be used to passivate the silicon oxide film.
  • the passivation group can be dissociated with a silanol group and can block the continuous condensation reaction of the second silane compound. Therefore, gelation of the entire second silane compound and the etchant composition can be prevented.
  • the compound represented by Chemical Formula 1 may include, for example, at least one of the compounds represented by the following Chemical Formulas 1-1 to 1-3.
  • the compound represented by Chemical Formula 2 may include, for example, at least one of the compounds represented by the following Chemical Formulas 2-1 to 2-3.
  • the compound represented by Chemical Formula 3 may include, for example, a compound represented by Chemical Formula 3-1.
  • the second silane compound includes a silane compound in which all the substitution sites of the silicon atoms are substituted with passivation groups.
  • the second silane compound may exhibit an excellent oxide protective effect by a plurality of passivation groups.
  • the gelation phenomenon can be prevented.
  • the substitution site may mean a site which may be substituted with a substituent among the bonding sites of the silicon atoms. That is, the silane compound in which all the substitution sites of the silicon atom are substituted with the passivation group may mean a compound in which all the sites that can be substituted with the substituent among all the bonding sites of the silicon atom are substituted with the passivation group.
  • the second silane compound may provide a good passivation effect by having a plurality of passivation groups.
  • the silane compound of the fully substituted silane compound may include a monopodal silane compound or a dipodal silane compound.
  • the monopodal compound may refer to a compound containing one silicon atom.
  • the dipodal compound may mean a compound including two silicon atoms. The two silicon atoms may be connected to each other by a linker group.
  • the monopodal silane compound all four bonding sites of the silicon atom are substituted sites, and all four substituted sites may be substituted with passivation groups.
  • a total of six bonding sites may be substituted sites except for bonding sites connecting silicon atoms to each other out of eight bonding sites of two silicon atoms, and all six substitution sites are passivation groups.
  • the dipodal silane compound may include more passivation groups in one molecule and passivation groups each connected to two silicon atoms may protect, for example, an oxide film. Thus, the passivation effect can be better.
  • the second silane compound may include a compound represented by Formula 4 or 5 below.
  • the compound represented by the following Chemical Formula 4 or 5 may be provided as a silane compound in which all substitution sites of the silicon atom are substituted with a passivation group.
  • X 4 to X 7 may be each independently a halogen element except fluorine, an alkoxy group having 1 to 4 carbon atoms, or an acetoxy group.
  • X 9 to X 14 may each independently represent a halogen element except for fluorine, an alkoxy group having 1 to 4 carbon atoms, an acetoxy group or a phosphoric acid group, and Y may be an alkylene group having 1 to 3 carbon atoms.
  • the compound of Formula 5 when Y is an alkylene group having 5 or more carbon atoms such as a pentylene group, the compound of Formula 5 may not be substantially dissolved in the aqueous solution of phosphoric acid. Therefore, the passivation effect of the etchant composition can be greatly reduced.
  • Each of the compounds represented by Formula 4 or 5 may be used alone, or two kinds thereof may be mixed and used.
  • the compound represented by Formula 4 may be substituted with four passivation groups as a monopodal silane compound, thereby exhibiting an excellent passivation effect.
  • the compound represented by Chemical Formula 4 may include, for example, at least one of the compounds represented by the following Chemical Formulas 4-1 to 4-3.
  • the compound represented by Chemical Formula 5 may be substituted with six passivation groups as a dipodal silane compound, thereby exhibiting an excellent passivation effect.
  • the compound represented by Chemical Formula 5 may include, for example, at least one of the compounds represented by the following Chemical Formulas 5-1 to 5-4.
  • the second silane compound may include a plurality of passivation groups, and the plurality of passivation groups may be dissociated into silanol groups in an aqueous solution of phosphoric acid. Therefore, a plurality of silanol groups may be formed, and the silanol groups may form a siloxane compound through a continuous condensation reaction.
  • the condensation reaction occurs three-dimensionally, the molecular weight of the siloxane compound is rapidly increased, the gelation may be intensified.
  • the said 1st silane compound can suppress the polymerization reaction of the said 2nd silane compound. Therefore, the gelation phenomenon can be prevented while securing an excellent passivation effect.
  • the second silane compound and the first silane compound may be used in a weight ratio of 1: 1 to 1:50.
  • the first silane compound may be used in excess (by weight) than the second silane compound.
  • the excellent passivation effect of the second silane compound, the phosphoric acid compatibility of the first silane compound, and the anti-gelling effect may be simultaneously obtained.
  • the second silane compound and the first silane compound may be used in a weight ratio of 1: 4 to 1:30.
  • the first silane compound may be used in an amount of 0.1 to 10% by weight based on the total weight of the composition.
  • the phosphoric acid compatibility improvement and anti-gelling effect may not be sufficiently implemented.
  • the content exceeds the content, the first silane compound may not be completely dissolved in the aqueous solution of phosphoric acid, and gelation of the first silane compound itself may be promoted.
  • the action of phosphoric acid may be hindered to reduce the etching performance of the composition.
  • 0.01 to 1% by weight of the second silane compound may be used based on the total weight of the composition.
  • the content of the second silane compound is less than 0.01% by weight based on the total weight of the composition, the passivation effect may be insufficient, and when the content is more than 1% by weight based on the total weight of the composition, gelation may be promoted.
  • the insulating film etching composition may not include a component capable of generating a residue in the etching object, for example, an oxime compound. Accordingly, the silicon nitride film etching efficiency by phosphoric acid may be improved while protecting the silicon oxide film by the first silane compound and the second silane compound.
  • the insulating film etching composition may include excess water (eg, deionized water).
  • the phosphoric acid may be provided in the form of an aqueous solution (eg, 85% phosphoric acid), and the first silane compound and the second silane compound may be mixed in the amounts described above with respect to 100 parts by weight of the aqueous solution of phosphoric acid.
  • the insulating film etching composition may be substantially composed of the above-described phosphoric acid, the first silane compound, the second silane compound, and excess water.
  • the insulating film etching composition may include additional components such as an etch enhancer within a range that does not impair passivation performance, etch efficiency and anti-gelling properties of the first and second silane compounds. It may be.
  • 1 to 3 are schematic cross-sectional views for describing a method of forming a pattern according to example embodiments.
  • the oxide film 110 and the nitride film 120 may be sequentially formed on the substrate 100.
  • the substrate 100 may include a semiconductor material such as single crystal silicon, single crystal germanium, or may be formed to include polysilicon.
  • the oxide film 110 may be formed to include silicon oxide.
  • the oxide film 110 may be formed through a chemical vapor deposition (CVD) process, a sputtering process, a physical vapor deposition (PVD) process, an atomic layer deposition (ALD) process, or the like.
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • ALD atomic layer deposition
  • the nitride film 120 may be formed on the oxide film 110.
  • the nitride film 120 may be formed through a CVD process, a PVD process, a sputtering process, an ALD process, and the like to include silicon nitride.
  • a photoresist pattern 130 may be formed on the nitride film 120.
  • a portion of the photoresist film may be removed through a selective exposure process and a developing process.
  • the photoresist pattern 130 exposing a part of the upper surface of the nitride film 120 may be formed.
  • a wet etching process using the photoresist pattern 130 as an etching mask and using an insulating film etchant composition according to the exemplary embodiments described above may be performed.
  • the exposed nitride layer 120 may be removed to form the nitride layer pattern 125.
  • the insulating film etchant composition according to the exemplary embodiments may provide significantly improved oxide passivation by the first silane compound and the second silane compound, while suppressing regrowth of the oxide film. Accordingly, the surface of the oxide film 110 may be substantially etched or damaged, or regrowth may not occur, and only the nitride film 120 may be selectively etched.
  • the temperature of the etchant composition may be heated to about 150 °C or more. Since the first silane compound and the second silane compound are stable even at a high temperature, the initial etching rate and the passivation performance can be maintained uniformly.
  • the photoresist pattern 130 may then be removed through a strip process and / or an ashing process.
  • the nitride film 120 may be partially etched, but the nitride film 120 may be entirely removed using the etchant composition. Even in this case, the entire upper surface of the oxide film 110 may be passivated entirely by the first silane compound and the second silane compound to be protected from etching damage.
  • 4 to 6 are schematic cross-sectional views for describing a method of forming a pattern according to example embodiments.
  • the plurality of oxide films 210 and the plurality of nitride films 220 may be alternately repeatedly stacked on the substrate 200.
  • a through pattern 230 penetrating the oxide films 210 and the nitride films 220 may be formed.
  • the through pattern 230 may be formed by filling a filling material in the openings.
  • the through pattern 230 may include a semiconductor material such as polysilicon or a conductive material such as a metal.
  • the nitride layers 220 may be selectively removed using the etchant composition according to the exemplary embodiments described above.
  • the oxide layers 210 may remain on the sidewall of the through pattern 230, and the gaps 240 may be defined by the space from which the nitride layers 220 are removed.
  • the gaps 240 may be filled with a conductive film, for example, a metal film.
  • the oxide layers 210 may be passivated entirely by the first silane compound and the second silane compound during the etching process to be protected from etching damage and to maintain thickness and shape.
  • the above-described pattern forming method is exemplary, and the insulating film etching composition according to the embodiments of the present invention may be used to form various insulating structures (eg, gate insulating film, barrier film, device isolation film, etc.) included in a semiconductor device or a display device. Can be applied for
  • aqueous solution of 85% phosphoric acid was prepared by mixing the silane compound of Table 1 in the content of Table 1 (% by weight relative to the total weight of the composition). A portion of the total weight of the composition except for the following silane compound is accounted for by an aqueous 85% phosphoric acid solution.
  • OEt means ethoxy.
  • a silicon oxide film (SiO 2 ) 400 mm thick wafer was cut into a size of 2 ⁇ 2 cm 2 to prepare a sample, and the sample was immersed in the compositions of Examples and Comparative Examples described in Table 2 at a temperature of 160 ° C. for 3600 seconds. Thereafter, after washing and drying with deionized water (DIW), the film thickness before and after etching was measured using an ellipsometer to measure the amount of etch and evaluated according to the following criteria.
  • DIW deionized water
  • a sample was prepared by cutting a silicon nitride film (SiN) 5000 mm thick wafer into a size of 2 ⁇ 2 cm 2 , and the sample was immersed in the compositions of Examples and Comparative Examples at a temperature of 160 ° C. for 3 minutes. Then, after washing and drying with deionized water (DIW), the film thickness was measured with a scanning electron microscope (SEM) to measure the initial etching rate ( ⁇ / min).
  • DIW deionized water
  • ⁇ etching rate after initial processing of 10 sheets / initial etching rate of less than 0.8

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Abstract

Une composition d'agent de gravure de film isolant selon des modes de réalisation de la présente invention comprend : de l'acide phosphorique ; un premier composé silane comprenant un composé silane ayant des groupes passivants utilisés comme substituants d'au moins deux groupes alkyle, y compris un groupe méthyle ou un groupe éthyle ; un second composé silane comprenant un composé silane ayant un groupe passivant utilisé comme substituant à chaque position de substitution de l'atome de silicium ; et de l'eau en excès. Un film d'oxyde de silicium peut être passivé efficacement et un phénomène de gélification peut être supprimé efficacement.
PCT/KR2019/002184 2018-08-20 2019-02-22 Composition d'agent de gravure de film isolant et procédé de formation de motif l'utilisant WO2020040386A1 (fr)

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KR10-2018-0097002 2018-08-20
KR20180097002 2018-08-20
KR10-2018-0139046 2018-11-13
KR1020180139046A KR102629576B1 (ko) 2018-08-20 2018-11-13 절연막 식각액 조성물 및 이를 이용한 패턴 형성 방법

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KR20170126049A (ko) * 2016-05-04 2017-11-16 오씨아이 주식회사 실리콘 질화막 식각 용액

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KR20110037741A (ko) * 2009-10-07 2011-04-13 테크노세미켐 주식회사 실리콘질화막에 대한 고선택비 식각용 조성물
KR101539375B1 (ko) * 2014-07-17 2015-07-27 솔브레인 주식회사 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법
KR20170066183A (ko) * 2015-12-04 2017-06-14 솔브레인 주식회사 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법
KR20170093430A (ko) * 2016-02-05 2017-08-16 동우 화인켐 주식회사 실리콘 질화막 식각액 조성물 및 이를 이용하는 반도체 소자 및 tft 어레이 기판의 제조방법
KR20170126049A (ko) * 2016-05-04 2017-11-16 오씨아이 주식회사 실리콘 질화막 식각 용액

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