WO2020035413A1 - Composant semi-conducteur optoélectronique muni d'un élément de support qui comprend un matériau électroconducteur - Google Patents

Composant semi-conducteur optoélectronique muni d'un élément de support qui comprend un matériau électroconducteur Download PDF

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Publication number
WO2020035413A1
WO2020035413A1 PCT/EP2019/071446 EP2019071446W WO2020035413A1 WO 2020035413 A1 WO2020035413 A1 WO 2020035413A1 EP 2019071446 W EP2019071446 W EP 2019071446W WO 2020035413 A1 WO2020035413 A1 WO 2020035413A1
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Prior art keywords
layer
semiconductor layer
semiconductor
optoelectronic semiconductor
main surface
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PCT/EP2019/071446
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German (de)
English (en)
Inventor
Christian LEIRER
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Osram Oled Gmbh
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Publication of WO2020035413A1 publication Critical patent/WO2020035413A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body

Definitions

  • a light emitting diode is a light emitting device based on semiconductor materials.
  • an LED includes a pn junction. If electrons and holes recombine with one another in the region of the pn junction, for example because a corresponding voltage is applied, electromagnetic radiation is generated.
  • the present invention has for its object to provide an improved optoelectronic semiconductor component.
  • An optoelectronic semiconductor component comprises an optoelectronic semiconductor chip which is suitable for emitting electromagnetic radiation and a first semiconductor Layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a first current distribution layer.
  • the first semiconductor layer is arranged on a side facing away from a first main surface of the second semiconductor layer. Electromagnetic radiation emitted by the optoelectronic semiconductor chip is emitted via the first main surface of the second semiconductor layer.
  • the first current distribution layer is arranged on the side of a first main surface of the first semiconductor layer.
  • the optoelectronic semiconductor component furthermore has a carrier element which comprises an electrically conductive material, is arranged on a side of the first main surface of the first semiconductor layer and extends in the vertical direction along an edge of the optoelectronic semiconductor chip.
  • the electrically conductive material is connected to the second semiconductor layer.
  • the optoelectronic semiconductor component can furthermore have a transparent conductive layer over the first main surface of the second semiconductor layer, the transparent conductive layer being connected to the electrically conductive material of the carrier element and the second semiconductor layer.
  • the transparent conductive layer can be formed over the entire surface of the second semiconductor layer.
  • a surface of the transparent conductive layer can be roughened.
  • the optoelectronic semiconductor component can furthermore have a second current distribution structure which is arranged above the first main surface of the second semiconductor layer and is connected to the second semiconductor layer and the electrically conductive material of the carrier element.
  • the second power distribution structure can consist of one transparent material.
  • the second current distribution structure can consist of an opaque material.
  • the optoelectronic semiconductor component can furthermore have a metallic mirror layer which is arranged between the second semiconductor layer and the first current distribution layer.
  • the optoelectronic semiconductor component comprises a first contact element which is connected to the first current distribution layer, and a second contact element which is connected to the conductive material of the carrier element, the first and the second contact element in each case on one side of the first main surface the first semiconductor layer are arranged.
  • the optoelectronic semiconductor component can furthermore have a mold material between the first and the second contact element.
  • the first contact element is arranged within an opening arranged in the carrier element.
  • the first and the second semiconductor layer can each contain GaN.
  • the first conductivity type can be p-type and the second conductivity type can be n-type.
  • the carrier element can consist of conductive material.
  • a horizontal dimension of the semiconductor chip can be less than 100 ⁇ m.
  • a method for producing an optoelectronic semiconductor component comprises forming a second semiconductor layer of a second conductivity type and a first semiconductor layer of a first conductivity type over a growth substrate, the second semiconductor layer being arranged on a side facing away from a first main surface of the first semiconductor layer and a first main surface of the second semiconductor layer on the Side of the growth substrate is arranged.
  • the method further comprises forming a first current distribution layer over that of the first semiconductor layer, forming a carrier element, which comprises an electrically conductive material, on one side of the first main surface of the first semiconductor layer, the carrier element extending in a vertical direction along one Edge of the first semiconductor layer extends and the electrically conductive material is connected to the second semiconductor layer and the detachment of the growth substrate after forming the carrier element.
  • a carrier element which comprises an electrically conductive material
  • the method may further include forming a first contact element in electrical contact with the first current distribution layer and forming a second contact element in electrical contact with the conductive material of the support member, the first and second contact members each on one side of the first Main surface of the first semiconductor layer are arranged.
  • the method may further comprise forming a molding material between the first contact element and the second contact element, the molding material being formed before the growth substrate is detached.
  • the method may further comprise forming a transparent conductive layer over the first main surface of the second semiconductor layer, the transparent conductive layer being connected to the electrically conductive material of the carrier element and the second semiconductor layer.
  • FIG. 1A shows a schematic cross-sectional view of an optoelectronic semiconductor component in accordance with embodiments.
  • FIG. 1B shows a schematic plan view of a part of the optoelectronic semiconductor component.
  • FIG. IC shows a schematic cross-sectional view of an optoelectronic semiconductor component in accordance with further embodiments.
  • FIG. 2A shows a schematic cross-sectional view of part of an optoelectronic semiconductor component in accordance with embodiments.
  • FIG. 2B shows a schematic plan view of a part of an optoelectronic semiconductor component.
  • FIG. 3A shows a schematic cross-sectional view of part of an optoelectronic semiconductor component in accordance with embodiments.
  • FIG. 3B shows a schematic plan view of a part of an optoelectronic semiconductor component.
  • FIG. 4A shows a workpiece in the production of the described optoelectronic semiconductor component.
  • FIG. 4B summarizes a method of manufacturing an optoelectronic semiconductor device.
  • Wafer or “semiconductor substrate” used in the following description may include any semiconductor-based structure that has a semiconductor surface. Wafers and structures are to be understood to include doped and undoped semiconductors, epitaxial semiconductor layers, optionally supported by a base, and other semiconductor structures. For example, a layer of a first semiconductor material on a growth substrate made of a second semiconductor material or of an insulating material, for example Sapphire, have grown. Depending on the intended use, the semiconductor can be based on a direct or an indirect semiconductor material.
  • semiconductor materials which are particularly suitable for generating electromagnetic radiation include, in particular, nitride semiconductor compounds, by means of which, for example, ultraviolet, blue or longer wavelength light can be generated, such as, for example, GaN, InGaN, A1N, AlGaN, AlGalnN, phosphide semiconductor compounds, by means of, for example green or longer-wave light can be generated, such as GaAsP, AlGalnP, GaP, Al-GaP, and other semiconductor materials such as AlGaAs, SiC, ZnSe, GaAs, ZnO, Ga2Cg, diamond, hexagonal BN and combinations of the materials mentioned.
  • the stoichiometric ratio of the ternary compounds can vary.
  • semiconductor materials can include silicon, silicon germanium and germanium.
  • the term “semiconductor” also includes organic semiconductor materials.
  • lateral and “horizontal”, as used in this description, are intended to describe an orientation or alignment that runs essentially parallel to a first surface of a semiconductor substrate or semiconductor body. This can be the surface of a wafer or a die or a chip, for example.
  • vertical is intended to describe an orientation which is essentially perpendicular to the first surface of the semiconductor substrate or semiconductor body.
  • electrically connected means a low-resistance electrical connection between the connected elements.
  • the electrically connected elements do not necessarily have to be connected directly to one another. Further elements can be arranged between electrically connected elements.
  • electrically connected also includes tunnel contacts between the connected elements.
  • FIG. 1A shows a cross-sectional view through part of an optoelectronic semiconductor component 10.
  • An optoelectronic semiconductor component 10 comprises an optoelectronic semiconductor chip 15 which is suitable for emitting electromagnetic radiation 20.
  • the optoelectronic semiconductor chip 15 has a first semiconductor layer 120 of a first conductivity type, for example p-type, and a second semiconductor layer 130 of a second conductivity type, for example n-type.
  • the optoelectronic semiconductor chip 15 also has a first current distribution layer 125 which is electrically connected to the first semiconductor layer 120.
  • the first and second semiconductor layers 120, 130 are stacked one above the other.
  • the first semiconductor layer 120 is arranged on a side facing away from a first main surface 145 of the second semiconductor layer 130.
  • Electromagnetic radiation 20 emitted by the optoelectronic semiconductor chip 15 is output via the first main surface 145 of the second semiconductor layer 130.
  • the first power distribution layer 125 is on the side the first main surface
  • the optoelectronic semiconductor component 10 also has a carrier element 135.
  • the carrier element 135 comprises an electrically conductive material 132 and is arranged on one side of the first main surface 144 of the first semiconductor layer 120.
  • the carrier element extends in the vertical direction along an edge of the optoelectronic semiconductor chip.
  • the electrically conductive material 132 of the carrier element 135 is connected to the second semiconductor layer 130.
  • the carrier element 135 can consist entirely of one or more conductive materials. According to further embodiments, however, it can also be constructed from an insulating material and coated with one or more conductive layers.
  • the carrier element 135 carries the semiconductor chip 15.
  • the carrier element 135 extends along a side surface of the semiconductor chip 15 to a height of the second semiconductor layer 130.
  • an upper side of the carrier element 135 can be arranged in the vicinity of the first main surface 145 of the second semiconductor layer 130.
  • the electrically conductive material 132 of the carrier element 135 can be connected directly to the second semiconductor layer 130.
  • connecting elements may provide electrical contact between the second semiconductor layer 130 and the conductive material of the carrier element 135.
  • contact elements can provide electrical contact at the edge of the second semiconductor layer 130 with the electrically conductive material of the carrier element.
  • the contact elements can also be formed by a current distribution structure or a transparent electrode layer can be realized.
  • an active region 115 can be arranged between the first and second semiconductor layers 120, 130.
  • the active region 115 can have, for example, a pn junction, a double heterostructure, a single quantum well structure (SQW, single quantum well) or a multiple quantum well structure (MQW, multi quantum well) for generating radiation.
  • Quantum well structure has no significance with regard to the dimensionality of the quantization. It therefore includes, among other things, quantum wells, quantum wires and quantum dots, as well as any combination of these layers.
  • a mirror layer 124 can be provided between the first semiconductor layer and the first current distribution layer 125.
  • the mirror layer can contain silver or be made of silver or contain zinc oxide or be made of zinc oxide.
  • a mirror layer 124 made of silver can be completely enclosed by the first current distribution layer 125 and thus encapsulated, as a result of which a migration of silver ions, which could take place for example in the presence of moisture, is prevented or suppressed.
  • An insulation layer 138 is arranged between the first power distribution layer 125 and the carrier element 135.
  • a first contact element 127 can be provided on the side of the semiconductor chip 15 facing away from the first main surface 145 of the second semiconductor layer 130 in order to contact the first current distribution layer 125.
  • the first contact element 127 can be arranged within an opening formed in the carrier element 135.
  • the first contact element 127 can be isolated by an insulation material 141 be electrically insulated from the carrier element 135.
  • the insulation material 141 can comprise silicon nitride, silicon oxide or a mixture of these materials.
  • a contact layer 128, for example made of titanium, can be arranged between the insulation material 141 and the first contact element 127.
  • a first main surface 145 of the second semiconductor layer 130 can be roughened in order to provide an improved coupling-out efficiency of the semiconductor component.
  • the second semiconductor layer 130 is connected via the carrier element 135. Furthermore, the first semiconductor layer 120 can be connected to a suitable connection via the first current distribution layer 125 and the first contact element 127. In this way, it is possible to electrically connect the optoelectronic semiconductor component without using the active surface of the semiconductor chip 15, for example for contact feedthroughs or knotting, and thus not for an emission of electromagnetic radiation.
  • a length d of the semiconductor chip can be less than 50 gm.
  • the chip size d can be less than 40 gm or less than 10 pm.
  • the chip size d can be larger than 500 nm, for example larger than 1 pm.
  • the chip size d can be measured in the lateral direction and, for example, correspond to the length of a side surface if the semiconductor chip is of a rectangular shape. Due to the small chip size d, it is possible to efficiently electrically connect the second semiconductor layer 130, even if the transverse conductivity of the semiconductor material used is not very large.
  • the first and second semiconductor layers 120, 130 can be a GaN contain semiconductor material.
  • the carrier element 135 can for example be a nickel layer, for example with a layer thickness of more than 5 gm, for example more than 7 gm, for example 10 gm or more.
  • one or more intermediate layers 134 may be provided between the insulation layer 138 and the layer of conductive material 132.
  • the intermediate layer 134 can be, for example, a growth-promoting seed layer, which can be conductive.
  • it can contain Ti2oPt2o and gold.
  • an adhesion-promoting layer for example made of titanium, can be provided between the intermediate layer 134 and the layer of conductive material 132, for example with a layer thickness of less than 50 nm.
  • carrier element 135 thus encompasses the conductive layers which are formed adjacent and largely conform to the layer of conductive material 132.
  • the layers belonging to the carrier element 135 can in particular extend along the edge of the optoelectronic semiconductor chip 15. In particular, extend the conductive intermediate layer 134 or the electrically conductive material 132 of the carrier element along the edge of the optoelectronic semiconductor chip 15, for example to a height of the second semiconductor layer 1.
  • the first semiconductor layer 120 can be separated from the conductive intermediate layer 134 or the electrically conductive via an insulation layer 138 Insulated material 132 of the carrier element
  • the conductive intermediate layer 134 or the electrically conductive material 132 of the carrier element can be electrically connected to the second semiconductor layer at the edge of the optoelectronic semiconductor chip
  • the conductive intermediate layer 134 is suitable, for example, for connecting the electrically conductive material 132 of the carrier element to the second semiconductor layer 130.
  • FIG. 1B shows a plan view of the optoelectronic semiconductor component 10. As can be seen, the optoelectronic semiconductor chip 15 is surrounded in a ring by the carrier element 135 or the intermediate layer 134 of the carrier element 135.
  • the shape of the optoelectronic semiconductor component 10 need not necessarily be square, but can take any shape.
  • An exposed surface of the semiconductor chip 15 is the surface of the second semiconductor layer 130.
  • the second semiconductor layer 130 is electrically conductively connected to the electrically conductive material 132 of the carrier element 135.
  • FIG. IC shows a cross-sectional view of part of an optoelectronic semiconductor component in accordance with further embodiments.
  • the in FIG. IC shown optoelectronic semiconductor component comprises contact elements 127, 137.
  • the first contact element 127 is electrically conductively connected to the first current distribution layer 125, optionally via the contact layer 128.
  • the second contact element 137 is electrically conductively connected to the electrically conductive material of the carrier element 135, optionally via a further contact layer 133, which can be constructed, for example, from titanium.
  • the first and second contact elements 127, 137 can be realized by nickel or copper elements, for example with a layer thickness of more than 50 ⁇ m, for example approximately 100 ⁇ m.
  • a first connection area 126 can be arranged on the exposed surface of the first contact element 127, and a second connection area 136 can be arranged on the exposed surface of the second contact element 137.
  • the first and second connection areas 126, 136 can each be realized, for example, by a NiAu alloy with a layer thickness of less than 300 nm, for example less than 150 nm, for example more than 100 nm.
  • An intermediate layer 139 for example made of an insulating material, may be arranged between the first current distribution layer 125 and the insulation layer 138.
  • the structure of semiconductor chip 15 and carrier element 135 and contact elements 127, 137 can also be molded in a suitable molding material or a casting compound 140.
  • the molding material 140 can contain a permanent photoresist material, silicone, epoxy resin or a mixture of these materials.
  • FIG. 2A shows a cross-sectional view of a semiconductor device according to further embodiments.
  • the optoelectronic semiconductor component additionally has a second current distribution structure 152 which is arranged above the first main surface 145 of the second semiconductor layer 130 and is electrically connected to the latter.
  • the second current distribution structure 152 may have been produced by depositing a conductive layer over the entire area and subsequently structuring it.
  • a material of the second current distribution structure 152 can be transparent or opaque, for example.
  • the width of the second current distribution structure 152 is dimensioned such that the second semiconductor layer 130 is shaded as little as possible.
  • the second current distribution structure 152 is electrically connected to the electrically conductive material 132 of the carrier element 135.
  • the second current distribution structure 152 can be produced from a transparent conductive material, for example ITO (“indium tin oxide”) or indium zinc oxide.
  • FIG. 2B shows a schematic plan view of a part of the optoelectronic component.
  • the second current distribution structure 152 may be formed in strips.
  • the second current distribution structure 152 is arranged above the second semiconductor layer 130.
  • the optoelectronic semiconductor chip 15 is surrounded by the carrier element 135, for example by the electrically conductive intermediate layer 134.
  • the second current distribution structure 152 is connected to the layer of electrically conductive material 132 of the carrier element 135 via the intermediate layer 134.
  • FIG. 3A shows a cross-sectional view of an optoelectronic semiconductor component in accordance with further embodiments. Deviating from that in FIG. IC embodiment is here arranged over the first main surface 145 of the second semiconductor layer 130 over the entire surface, a transparent electrode layer 150.
  • the transparent electrode layer 150 can contain or consist of a transparent conductive oxide, for example ITO (“indium tin oxide”).
  • the transparent electrode layer 150 can be connected to the electrically conductive material of the carrier element 135.
  • the transparent electrode layer 150 is connected to the electrically conductive intermediate layer 134 of the carrier element 135.
  • a surface of the transparent electrode layer 150 can be roughened in order to increase the coupling-out efficiency of the optoelectronic component.
  • FIG. 3B shows a top view of the optoelectronic semiconductor component.
  • the transparent electrode layer 150 is arranged over the entire surface above the surface of the semiconductor chip 15 and is electrically conductively connected to the electrically conductive material of the carrier element 135.
  • the carrier element 135 surrounds the optoelectronic semiconductor chip 15 in a ring.
  • the intermediate layer 134 can make electrical contact between the electrically conductive material of the carrier element 135 and the second Provide semiconductor layer 130.
  • the provision of a transparent electrode layer 150 or a second current distribution structure made of an electrically conductive material is advantageous if the transverse conductivity of the second semiconductor layer 130 is not sufficient to ensure adequate contacting of the second semiconductor layer 130 in the entire area over the entire size of the semiconductor chip 15 provide.
  • FIG. 4A shows a workpiece in the production of the described optoelectronic semiconductor component 10.
  • the second semiconductor layer 130 optionally the active region 115 and the first semiconductor layer 120 are grown epitaxially on a suitable growth substrate 100, for example a sapphire substrate.
  • the mirror layer 124 and the first current distribution layer 125 are formed over the grown layer stack.
  • An insulation layer 138 is then applied over the resulting structure.
  • the insulation layer 138 can comprise, for example, silicon oxide, silicon nitride, aluminum oxide with different stoichiometric ratios, mixtures of these dielectrics or other dielectric materials.
  • the carrier element 135 is then formed.
  • the intermediate layer 134 can be, for example, a growth-promoting inoculation layer that can be conductive.
  • the intermediate layer 134 can contain Ti2oPt2o and gold.
  • an adhesion-promoting layer for example made of titanium, can be provided between the intermediate layer 134 and the layer made of conductive material 132.
  • the conductive material 132 may contain nickel or consist of nickel and be electroplated. An opening for contacting the first current distribution layer 125 is then formed in the carrier element 135.
  • first and the second contact element 127, 137 are formed.
  • the first and second contact elements 127, 137 may contain nickel or copper or consist of these materials.
  • the first and second contact elements 127, 137 can, for example, be grown electrically. Then the grown structure, while still on the growth substrate, is molded in using a suitable molding material. Examples of suitable molding processes include compression molding, transfer molding, hot pressing, casting or introducing a permanent photoresist material.
  • the wafer is bonded to a temporary carrier.
  • the back is then ground back to a total layer thickness of less than 200 ⁇ m, for example approximately 120 ⁇ m.
  • a metallization tion to form the first and second connection areas 126, 136 on the first and second contact elements 127, 137.
  • the wafer is separated into individual LED chips.
  • FIG. 4B summarizes the described method.
  • a method of manufacturing an optoelectronic semiconductor component (10) comprises forming (S100) a second semiconductor layer of a second conductivity type and a first semiconductor layer of a first conductivity type over a growth substrate, the second semiconductor layer on one of a first main surface of the is arranged on the side facing away from the first semiconductor layer and a first main surface of the second semiconductor layer is arranged on the side of the growth substrate.
  • the method further includes forming (S110) a first current distribution layer over that of the first semiconductor layer and forming (S120) a carrier element comprising an electrically conductive material on one side of the first main surface of the first semiconductor layer, the carrier element extends in the vertical direction along an edge of the first semiconductor layer and the electrically conductive material is connected to the second semiconductor layer.
  • the method also includes detaching (S140) the growth substrate after forming the support member.
  • the method further comprises forming (S125) a first contact element in electrical contact with the first current distribution layer and forming a second contact element in electrical contact with the conductive material of the carrier element, the first and the second contact element in each case on one side of the first main surface the first semiconductor layer are arranged.
  • the method may also form (S130) a Include molding material between the first contact element and the second contact element, wherein the molding material is formed prior to detaching the growth substrate.
  • the method may further comprise forming (S145) a transparent conductive layer over the first main surface of the second semiconductor layer, the transparent conductive layer being connected to the electrically conductive material of the carrier element and the second semiconductor layer.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne un élément semi-conducteur optoélectronique (10) comprenant une puce semi-conductrice optoélectronique (15) qui est appropriée pour émettre un rayonnement électromagnétique (20) et qui présente une première couche semi-conductrice (120) présentant un premier type de conductivité, une seconde couche semi-conductrice (130) présentant un second type de conductivité, ainsi qu'une première couche de répartition de courant (125). La première couche semi-conductrice (120) est agencée sur une face opposée à une première surface principale (145) de la seconde couche semi-conductrice (130). Le rayonnement électromagnétique (20) émis par la puce semi-conductrice optoélectronique (15) sort par la première surface principale (145) de la seconde couche semi-conductrice (130). La première couche de répartition de courant (125) est agencée sur la face d'une première surface principale (144) de la première couche semi-conductrice (120). L'élément semi-conducteur optoélectronique présente par ailleurs un élément de support (135) qui comprend un matériau électroconducteur (132), est agencé sur une face de la première surface principale (144) de la première couche semi-conductrice (120), et s'étend en direction verticale le long d'un bord de la puce semi-conductrice optoélectronique (15). Le matériau électroconducteur (132) est lié à la seconde couche semi-conductrice (130).
PCT/EP2019/071446 2018-08-14 2019-08-09 Composant semi-conducteur optoélectronique muni d'un élément de support qui comprend un matériau électroconducteur WO2020035413A1 (fr)

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DE102018119734.9A DE102018119734A1 (de) 2018-08-14 2018-08-14 Optoelektronisches halbleiterbauelement mit einem trägerelement, welches ein elektrisch leitendes material umfasst

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