WO2020027262A1 - Charge-transporting composition - Google Patents
Charge-transporting composition Download PDFInfo
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- WO2020027262A1 WO2020027262A1 PCT/JP2019/030221 JP2019030221W WO2020027262A1 WO 2020027262 A1 WO2020027262 A1 WO 2020027262A1 JP 2019030221 W JP2019030221 W JP 2019030221W WO 2020027262 A1 WO2020027262 A1 WO 2020027262A1
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- WIPO (PCT)
- Prior art keywords
- group
- carbon atoms
- substituted
- charge transporting
- composition
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- 239000000203 mixture Substances 0.000 title claims abstract description 101
- 125000002490 anilino group Chemical class [H]N(*)C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 claims abstract 2
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- 125000001072 heteroaryl group Chemical group 0.000 claims description 8
- 125000000304 alkynyl group Chemical group 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 4
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- 238000010561 standard procedure Methods 0.000 description 1
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- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
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- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- BDZBKCUKTQZUTL-UHFFFAOYSA-N triethyl phosphite Chemical compound CCOP(OCC)OCC BDZBKCUKTQZUTL-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical compound CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 description 1
- 125000005951 trifluoromethanesulfonyloxy group Chemical group 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- CYTQBVOFDCPGCX-UHFFFAOYSA-N trimethyl phosphite Chemical compound COP(OC)OC CYTQBVOFDCPGCX-UHFFFAOYSA-N 0.000 description 1
- COIOYMYWGDAQPM-UHFFFAOYSA-N tris(2-methylphenyl)phosphane Chemical compound CC1=CC=CC=C1P(C=1C(=CC=CC=1)C)C1=CC=CC=C1C COIOYMYWGDAQPM-UHFFFAOYSA-N 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- HTPBWAPZAJWXKY-UHFFFAOYSA-L zinc;quinolin-8-olate Chemical compound [Zn+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
- C07D209/56—Ring systems containing three or more rings
- C07D209/80—[b, c]- or [b, d]-condensed
- C07D209/82—Carbazoles; Hydrogenated carbazoles
- C07D209/88—Carbazoles; Hydrogenated carbazoles with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to carbon atoms of the ring system
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/611—Charge transfer complexes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
Definitions
- the present invention relates to a charge transporting composition.
- the present invention has been made in view of the above circumstances, and provides a thin film having good charge transportability, low extinction coefficient (k), good transparency, and high refractive index (n). It is an object of the present invention to provide a charge transporting composition capable of realizing an organic EL device having excellent characteristics when applied to a hole injection layer or the like.
- the present inventors have conducted intensive studies to achieve the above object, and as a result, have found that certain anilines having an N, N, N ', N'-tetra (carbazol-2-yl) -paraphenylenediamine structure in the molecule
- the charge-transporting composition containing the derivative only provides a charge-transporting thin film having a low extinction coefficient (k), good transparency, and a high refractive index (n), as compared with the case of using an aniline derivative having a similar structure.
- the present inventors have found that the composition itself has excellent storage stability, and that the present invention provides an organic EL device having excellent characteristics when the charge transporting thin film is applied to a hole injection layer or the like. I let it.
- a charge transport composition containing an aniline derivative represented by the following formula (1) is independently a group represented by any of the following formulas (Ar1) to (Ar9).
- R 1 to R 21 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms which may be substituted by Z 1 , or a C 2 to 20 carbon atom which may be substituted by Z 1 alkenyl groups, Z 1 at carbon atoms which may be substituted have 2-20 alkynyl group, which may prime be substituted by an aryl group, or Z 2 of which may 6 carbon atoms also be ⁇ 20 substituted by Z 2 2-20 heteroaryl groups, Z 1 is a halogen atom, a nitro group, a cyano group, a heteroaryl group aryl or Z 3 which do 2-20 carbon atoms substituted with Z 3 are carbon atoms that may 6 to be 20 substituted with Yes, Z
- the charge transporting composition of the present invention By using the charge transporting composition of the present invention, compared to the case of using a composition containing an aniline derivative having a similar structure, a charge having high transparency (low extinction coefficient (k)) and high refractive index (n) is used. A transportable thin film can be manufactured. Further, the charge transporting composition of the present invention is superior in storage stability to a composition containing an aniline derivative having a similar structure.
- the charge transporting thin film obtained from the charge transporting composition of the present invention can be suitably used as a thin film for an electronic element such as an organic EL element, and is provided between an anode and a light emitting layer of the organic EL element.
- An organic EL device having excellent characteristics can be obtained by using it as a functional layer, in particular, a hole injection layer.
- the charge transporting composition of the present invention contains an aniline derivative represented by the following formula (1).
- each Ar is independently a group represented by any of the following formulas (Ar1) to (Ar9).
- R 1 to R 21 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms which may be substituted by Z 1 , and which may be substituted by Z 1.
- an alkenyl group having 2 to 20 carbon atoms, substituted with an aryl group, or Z 2 alkynyl group, Z 2 is optionally carbon atoms 6 to be 20 substituted with Z 1 to 2 carbon atoms which may be ⁇ 20 substituted by And a heteroaryl group having 2 to 20 carbon atoms.
- Z 1 is a halogen atom, a nitro group, a cyano group, a heteroaryl group aryl or Z 3 which do 2-20 carbon atoms substituted with Z 3 are carbon atoms that may 6 to be 20 substituted with is there.
- Z 2 is a halogen atom, a nitro group, a cyano group, Z 3-substituted of having 1 to 20 carbon atoms in the alkyl group, an alkenyl group of Z 3 is 1-2 carbon atoms which may be 20 substituted by or Z An alkynyl group having 2 to 20 carbon atoms which may be substituted by 3 ;
- Z 3 is a halogen atom, a nitro group or a cyano group.
- halogen atom examples include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and a fluorine atom is preferable.
- the alkyl group having 1 to 20 carbon atoms may be linear, branched, or cyclic, and specific examples thereof include methyl, ethyl, n-propyl, isopropyl, n-butyl, and isobutyl.
- Group having 1 to 20 carbon atoms such as a s-butyl group, a s-butyl group, a t-butyl group, a n-pentyl group, a n-hexyl group, a n-heptyl group, a n-octyl group, a n-nonyl group and a n-decyl group.
- a chain or branched alkyl group and a cyclic alkyl group having 3 to 20 carbon atoms such as a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a cyclononyl group, and a cyclodecyl group.
- the alkenyl group having 2 to 20 carbon atoms may be linear, branched or cyclic, and specific examples thereof include ethenyl, n-1-propenyl, n-2-propenyl, 1-methylethenyl Group, n-1-butenyl group, n-2-butenyl group, n-3-butenyl group, 2-methyl-1-propenyl group, 2-methyl-2-propenyl group, 1-ethylethenyl group, 1-methyl- Examples thereof include a 1-propenyl group, a 1-methyl-2-propenyl group, an n-1-pentenyl group, and an n-1-decenyl group.
- the alkynyl group having 2 to 20 carbon atoms may be linear, branched or cyclic, and specific examples thereof include an ethynyl group, an n-1-propynyl group, an n-2-propynyl group, and an n-1 -Butynyl group, n-2-butynyl group, n-3-butynyl group, 1-methyl-2-propynyl group, n-1-pentynyl group, n-2-pentynyl group, n-3-pentynyl group, n- 4-pentynyl group, 1-methyl-n-butynyl group, 2-methyl-n-butynyl group, 3-methyl-n-butynyl group, 1,1-dimethyl-n-propynyl group, n-1-hexynyl group, and n-1-decynyl group.
- aryl group having 6 to 20 carbon atoms include phenyl, tolyl, 1-naphthyl, 2-naphthyl, 1-anthryl, 2-anthryl, 9-anthryl, and 1-phenanthryl. , 2-phenanthryl, 3-phenanthryl, 4-phenanthryl, 9-phenanthryl and the like.
- heteroaryl group having 2 to 20 carbon atoms examples include a 2-thienyl group, a 3-thienyl group, a 2-furanyl group, a 3-furanyl group, a 2-oxazolyl group, a 4-oxazolyl group, and a 5-oxazolyl group.
- an aryl group Z 2 are carbon atoms 6 also be ⁇ 20 substituted with a heteroaryl group Z 2 is optionally 2-20 carbon atoms preferably substituted with, Z more preferably an aryl group which may having 6 to 20 carbon atoms optionally substituted by 2 phenyl group which may be substituted with Z 2, which may be substituted with Z 2 1-naphthyl group, substituted with Z 2 An optionally substituted 2-naphthyl group is even more preferred.
- a halogen atom an alkyl group of Z 3 are optionally to 1 to 20 carbon atoms substituted with an alkenyl group Z 3 are optionally 2-20 carbon atoms substituted with preferred.
- a halogen atom is preferable, and a fluorine atom is more preferable.
- Ars are all the same. Further, from the viewpoint of improving the solubility of the aniline derivative in an organic solvent and obtaining a highly uniform composition with good reproducibility, a group represented by any one of formulas (Ar1) to (Ar5) is preferable.
- the group represented by Ar1) is optimal.
- the aniline derivative used in the present invention may be a paraphenylenediamine (1,4-phenylenediamine) and a halogenated or pseudohalogenated carbazole derivative Ar-X (where Ar is the same as described above; X is a halogen atom) in the presence of a catalyst. Or a pseudohalogen group).
- halogen atom examples include the same as described above, but a chlorine atom, a bromine atom and an iodine atom are preferable.
- pseudohalogen group examples include a (fluoro) alkylsulfonyloxy group such as a methanesulfonyloxy group, a trifluoromethanesulfonyloxy group, and a nonafluorobutanesulfonyloxy group; and an aromatic sulfonyloxy group such as a benzenesulfonyloxy group and a toluenesulfonyloxy group. And the like.
- the charge ratio of the 1,4-phenylenediamine to the halogenated or pseudohalogenated carbazole derivative is such that the halogenated or pseudohalogenated carbazole derivative is at least equivalent to the total amount of NH groups in 1,4-phenylenediamine. However, about 1 to 1.2 equivalents are preferred.
- Examples of the catalyst used in the reaction include copper catalysts such as copper chloride, copper bromide, and copper iodide; tetrakis (triphenylphosphine) palladium (Pd (PPh 3 ) 4 ), bis (triphenylphosphine) dichloropalladium (Pd (PPh 3 ) 2 Cl 2 ), bis (dibenzylideneacetone) palladium (Pd (dba) 2 ), tris (dibenzylideneacetone) dipalladium (Pd 2 (dba) 3 ), bis [tri (t-butyl) Phosphine)] palladium catalysts such as palladium (Pd (Pt-Bu 3 ) 2 ) and palladium acetate (Pd (OAc) 2 ). These catalysts may be used alone or in combination of two or more.
- Such catalysts may be used together with a known suitable ligand.
- ligands include triphenylphosphine, tri-o-tolylphosphine, diphenylmethylphosphine, phenyldimethylphosphine, trimethylphosphine, triethylphosphine, tributylphosphine, tri-t-butylphosphine, di-t-butyl ( Phenyl) phosphine, di-t-butyl (4-dimethylaminophenyl) phosphine, 1,2-bis (diphenylphosphino) ethane, 1,3-bis (diphenylphosphino) propane, 1,4-bis (diphenyl) Examples include tertiary phosphines such as phosphino) butane and 1,1′-bis (diphenylphosphino) ferrocene, and tertiary phosphites such as trimethyl
- the amount of the catalyst used can be about 0.01 to 0.2 mol, preferably about 0.15 mol, per 1 mol of the halogenated or pseudohalogenated carbazole derivative.
- the amount of the ligand used can be 0.1 to 5 equivalents to the catalyst to be used, but is preferably 1 to 2 equivalents.
- aliphatic hydrocarbons penentane, n-hexane, n-octane, n-decane, decalin, etc.
- halogenated aliphatic hydrocarbons chloroform, dichloromethane, dichloroethane, carbon tetrachloride, etc.
- aromatics Aromatic hydrocarbons (benzene, nitrobenzene, toluene, o-xylene, m-xylene, p-xylene, mesitylene, etc.), halogenated aromatic hydrocarbons (chlorobenzene, bromobenzene, o-dichlorobenzene, m-dichlorobenzene, p-dichlorobenzene, etc.), ethers (diethyl ether, diisopropyl ether, t-butyl methyl ether, tetrahydrofuran, dioxane, 1,2-dimethoxyethan
- the reaction temperature may be appropriately set in the range from the melting point to the boiling point of the solvent to be used, but is usually in the range of about 0 to 200 ° C, preferably in the range of 20 to 150 ° C.
- a post-treatment is carried out according to a conventional method to obtain a desired aniline derivative.
- the charge transporting composition of the present invention contains an organic solvent.
- an organic solvent a highly soluble solvent that can satisfactorily dissolve the aniline derivative represented by the formula (1), which is a charge transporting substance, can be used.
- the highly soluble solvent include, for example, cyclohexanone, N, N-dimethylformamide, N, N-dimethylacetamide, N, N-dimethylisobutyramide, N-methylpyrrolidone, 1,3-dimethyl-2-imidazo Examples include, but are not limited to, organic solvents such as lydinone and diethylene glycol monomethyl ether. These solvents may be used alone or in a combination of two or more. The amount used can be 5 to 100% by mass based on the whole solvent used in the composition.
- the composition has a viscosity of 10 to 200 mPa ⁇ s at 25 ° C., particularly 35 to 150 mPa ⁇ s, and a high viscosity organic solvent having a boiling point of 50 to 300 ° C., particularly 150 to 250 ° C. at normal pressure (atmospheric pressure).
- the viscosity of the composition can be easily adjusted, and as a result, it is possible to prepare a composition that gives a highly planar thin film with good reproducibility and that is suitable for the application method used.
- the high-viscosity organic solvent examples include cyclohexanol, ethylene glycol, ethylene glycol diglycidyl ether, 1,3-octylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, tripropylene glycol, 1,3-butanediol, Examples include, but are not limited to, 2,3-butanediol, 1,4-butanediol, propylene glycol, hexylene glycol, and the like. These solvents may be used alone or in a combination of two or more.
- the addition ratio of the high-viscosity organic solvent to the entire solvent used in the composition is preferably within a range in which no solid precipitates, and as long as no solid precipitates, the addition ratio is preferably 5 to 80% by mass.
- another solvent is used in an amount of 1 to 90% by mass, preferably 1 to 90% by mass based on the whole solvent used in the composition. Can be mixed at a ratio of 1 to 50% by mass.
- Examples of such a solvent include propylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol.
- Examples include, but are not limited to, monoethyl ether, diacetone alcohol, ⁇ -butyrolactone, ethyl lactate, n-hexyl acetate, and the like. These solvents may be used alone or in a combination of two or more.
- the aniline derivative represented by the formula (1) has an aryl group on the nitrogen atom at the 9-position of the carbazole moiety in the molecule, the aniline derivative is substituted on at least one nitrogen atom in the molecule.
- the aniline derivative represented by the formula (1) has an aryl group on the nitrogen atom at the 9-position of the carbazole moiety in the molecule.
- low-polarity solvents include chlorinated solvents such as chloroform and chlorobenzene; aromatic hydrocarbon-based solvents such as toluene, xylene, tetralin, cyclohexylbenzene, and decylbenzene; 1-octanol, 1-nonanol, -Aliphatic alcohol solvents such as decanol; tetrahydrofuran, dioxane, anisole, 4-methoxytoluene, 3-phenoxytoluene, dibenzyl ether, diethylene glycol dimethyl ether, diethylene glycol butyl methyl ether, triethylene glycol dimethyl ether, triethylene glycol butyl methyl ether, etc.
- chlorinated solvents such as chloroform and chlorobenzene
- aromatic hydrocarbon-based solvents such as toluene, xylene, tetralin, cyclohexylbenzene, and decylbenzene
- Ether solvents methyl benzoate, ethyl benzoate, butyl benzoate, dimethyl phthalate, diethyl maleate, isoamyl benzoate, bis (2 -Ethylhexyl), dibutyl maleate, dibutyl oxalate, hexyl acetate, ester solvents such as diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, and the like, but are not limited thereto. These solvents may be used alone or in a combination of two or more.
- the charge transporting composition of the present invention may contain water as a solvent, but when the charge transporting thin film obtained from the composition is used as a hole injection layer of an organic EL device, a highly durable device can be reproducibly prepared.
- the content of water is preferably 10% by mass or less, more preferably 5% by mass or less of the whole solvent, and it is optimal to use only an organic solvent as the solvent.
- “only organic solvent” means that only the organic solvent is used as the solvent, and denies the existence of "water” contained in a trace amount in the organic solvent or solid content used. It does not do.
- the solid content means components other than the solvent contained in the charge transporting composition.
- the charge transporting composition of the present invention may contain other charge transporting substances in addition to the charge transporting substance comprising the aniline derivative represented by the formula (1).
- the charge transporting composition of the present invention contains a charge transporting substance composed of the aniline derivative represented by the formula (1) and an organic solvent.
- the charge transporting ability is improved depending on the use of the obtained thin film. It may contain a dopant (charge-accepting substance) for the purpose.
- the dopant is not particularly limited as long as it is soluble in at least one kind of solvent used in the composition, and either an inorganic dopant or an organic dopant can be used. Further, the inorganic and organic dopants may be used alone or in combination of two or more. Further, during the process of obtaining a charge-transporting thin film as a solid film from the composition, for example, the function as a dopant is expressed for the first time because a part of the molecule comes off due to an external stimulus such as heating during baking. Alternatively, a substance capable of improving, for example, an arylsulfonic acid ester compound in which a sulfonic acid group is protected with a group which is easily eliminated may be used.
- the amount of the dopant substance in the composition cannot be specified unconditionally because it differs depending on the desired degree of charge transporting property and the kind of the dopant substance, but usually, the amount of the dopant substance is based on the mass of the aniline derivative 1 represented by the formula (1).
- the ratio is in the range of 0.0001 to 100.
- heteropolyacid is preferred as the inorganic dopant.
- the heteropolyacid typically has a structure in which a hetero atom is located at the center of a molecule, represented by a Keggin-type chemical structure represented by the following formula (H1) or a Dawson-type chemical structure represented by the following formula (H2). Further, it is a polyacid obtained by condensing isopolyacid which is an oxygen acid such as vanadium (V), molybdenum (Mo), and tungsten (W) with oxygen acid of a different element. Examples of such different types of oxyacids include oxyacids of silicon (Si), phosphorus (P), and arsenic (As).
- heteropolyacid examples include phosphomolybdic acid, silicomolybdic acid, phosphotungstic acid, silicotungstic acid, and phosphorus tungstomolybdic acid. These heteropoly acids may be used alone or in combination of two or more. These heteropoly acids are available as commercial products, and can also be synthesized by known methods.
- the one kind of heteropolyacid is preferably phosphotungstic acid or phosphomolybdic acid, and most preferably phosphotungstic acid.
- one of the two or more heteropoly acids is preferably phosphotungstic acid or phosphomolybdic acid, more preferably phosphotungstic acid.
- the heteropolyacid in a quantitative analysis such as elemental analysis, the number of elements is large or small from the structure represented by the general formula, even if it is obtained as a commercial product, or a known synthetic As long as it is appropriately synthesized according to the method, it can be used in the present invention. That is, for example, phosphotungstic acid is generally represented by the chemical formula H 3 (PW 12 O 40 ) ⁇ nH 2 O, and phosphomolybdic acid is generally represented by the chemical formula H 3 (PMo 12 O 40 ) ⁇ nH 2 O.
- the mass of the heteropolyacid specified in the present invention is not the mass of pure phosphotungstic acid (phosphotungstic acid content) in a synthetic product or a commercial product, but a commercially available product and a known synthetic polytungstic acid. In the form that can be isolated by the method, it means the total mass in the state containing water of hydration and other impurities.
- the amount of the heteropolyacid can be about 0.001 to 50.0 in terms of a mass ratio with respect to the aniline derivative 1 represented by the formula (1). It is about 0.01 to 20.0, more preferably about 0.1 to 10.0.
- preferable organic dopants include a tetracyanoquinodimethane derivative and a benzoquinone derivative.
- tetracyanoquinodimethane derivative include 7,7,8,8-tetracyanoquinodimethane (TCNQ) and halotetracyanoquinodimethane represented by the following formula (H3).
- benzoquinone derivative examples include tetrafluoro-1,4-benzoquinone (F4BQ), tetrachloro-1,4-benzoquinone (chloranil), tetrabromo-1,4-benzoquinone, 2,3-dichloro-5, 6-dicyano-1,4-benzoquinone (DDQ) and the like.
- R 101 to R 104 independently represent a hydrogen atom or a halogen atom, but at least one is a halogen atom, preferably at least two are halogen atoms, and at least three are halogen atoms. More preferably, all are halogen atoms.
- the halogen atom include the same as described above, but a fluorine atom or a chlorine atom is preferable, and a fluorine atom is more preferable.
- halotetracyanoquinodimethane examples include 2-fluoro-7,7,8,8-tetracyanoquinodimethane, 2-chloro-7,7,8,8-tetracyanoquinodimethane 2,5-difluoro-7,7,8,8-tetracyanoquinodimethane, 2,5-dichloro-7,7,8,8-tetracyanoquinodimethane, 2,3,5,6-tetra Chloro-7,7,8,8-tetracyanoquinodimethane, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) and the like.
- the amount thereof is 0.01 to 20.0 in terms of the amount (mol) of the aniline derivative 1 represented by the formula (1).
- it can be about 0.1 to 10.0, it is preferably about 0.1 to 10.0, and more preferably about 0.5 to 5.0.
- aryl sulfonic acid compounds include benzenesulfonic acid, tosylic acid, p-styrenesulfonic acid, 2-naphthalenesulfonic acid, 4-hydroxybenzenesulfonic acid, 5-sulfosalicylic acid, p-dodecylbenzenesulfonic acid, dihexylbenzenesulfonic acid, and 5,5-dihexylbenzenesulfonic acid, dibutylnaphthalenesulfonic acid, 6,7-dibutyl-2-naphthalenesulfonic acid, dodecylnaphthalenesulfonic acid, 3-dodecyl-2-naphthalenesulfonic acid, hexylnaphthalenesulfonic acid, 4-hexyl-1 -Naphthalenesulfonic acid, octylnaphthalenes
- a 1 represents O or S, and O is preferable.
- a 2 is a (q + 1) -valent group derived from naphthalene or anthracene (that is, a group obtained by removing (q + 1) hydrogen atoms from naphthalene or anthracene), and a group derived from naphthalene is preferable.
- a 3 is a p-valent group derived from perfluorobiphenyl (that is, a group obtained by removing p fluorine atoms from perfluorobiphenyl). p represents the number of bonds between A 1 and A 3 and is an integer satisfying 2 ⁇ p ⁇ 4, preferably 2.
- a 3 is a perfluorobiphenyldiyl group, preferably a perfluorobiphenyl-4,4′-diyl group.
- q represents the number of sulfonic acid groups bonded to A 2 and is an integer satisfying 1 ⁇ q ⁇ 4, and 2 is most preferable.
- a 4 to A 8 each independently represent a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 20 carbon atoms, a halogenated alkyl group having 1 to 20 carbon atoms or a group having 2 to 2 carbon atoms.
- the 20 alkenyl halide groups at least three of A 4 to A 8 are halogen atoms.
- halogenated alkyl group having 1 to 20 carbon atoms examples include trifluoromethyl, 2,2,2-trifluoroethyl, 1,1,2,2,2-pentafluoroethyl, 3,3,3-trifluoropropyl 2,2,3,3,3-pentafluoropropyl, 1,1,2,2,3,3,3-heptafluoropropyl, 4,4,4-trifluorobutyl, 3,3,4,4 , 4-pentafluorobutyl, 2,2,3,3,4,4,4-heptafluorobutyl, 1,1,2,2,3,3,4,4,4-nonafluorobutyl and the like
- halogenated alkenyl group having 2 to 20 carbon atoms examples include a perfluorovinyl group, a perfluoro-1-propenyl group, a perfluoro-2-propenyl group, a perfluorobutenyl group, and the like.
- a 4 to A 8 include a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 10 carbon atoms, a halogenated alkyl group having 1 to 10 carbon atoms, and a halogenated alkenyl having 2 to 10 carbon atoms.
- at least three of A 4 to A 8 are preferably a fluorine atom, such as a hydrogen atom, a fluorine atom, a cyano group, an alkyl group having 1 to 5 carbon atoms, and a fluorine atom having 1 to 5 carbon atoms.
- a perfluoroalkyl group is a group in which all hydrogen atoms of an alkyl group are substituted with fluorine atoms
- a perfluoroalkenyl group is a group in which all hydrogen atoms of an alkenyl group are substituted with fluorine atoms.
- r represents the number of sulfonic acid groups bonded to the naphthalene ring, and is an integer satisfying 1 ⁇ r ⁇ 4, preferably 2 to 4, and most preferably 2.
- the amount of the aryl sulfonic acid compound is preferably about 0.01 to 20.0 in terms of a substance amount (mole) ratio to the aniline derivative 1 represented by the formula (1). It is preferably about 0.4 to 5.0.
- the arylsulfonic acid compound may be a commercially available product, but can also be synthesized by a known method described in International Publication No. WO 2006/025342, International Publication No. 2009/096352, and the like.
- arylsulfonic acid ester compounds include arylsulfonic acid ester compounds. Specific examples thereof include an arylsulfonic acid ester compound disclosed in International Publication No. 2017/217455 and an arylsulfonic acid ester compound disclosed in International Publication No. 2017/217457.
- arylsulfonic acid ester compound a compound represented by any of the following formulas (H6) to (H8) is preferable.
- n is an integer satisfying 1 ⁇ n ⁇ 4, preferably 2.
- a 11 is an m-valent group derived from perfluorobiphenyl.
- a 12 is —O— or —S—, preferably —O—.
- a 13 is a (n + 1) -valent group derived from naphthalene or anthracene, and is preferably a group derived from naphthalene.
- R s1 to R s4 each independently represent a hydrogen atom or a linear or branched alkyl group having 1 to 6 carbon atoms
- R s5 represents an optionally substituted 2 to 20 carbon atoms.
- the linear or branched alkyl group having 1 to 6 carbon atoms include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, an s-butyl group and a t-butyl group. , N-hexyl group and the like.
- an alkyl group having 1 to 3 carbon atoms is preferable.
- the monovalent hydrocarbon group having 2 to 20 carbon atoms may be linear, branched, or cyclic, and specific examples thereof include an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, and an isobutyl group. And an alkyl group such as a t-butyl group; and an aryl group such as a phenyl, naphthyl and phenanthryl group.
- R s1 to R s4 is a straight-chain alkyl group having 1 to 3 carbon atoms, and the remainder is a hydrogen atom, or R s1 is a straight-chain alkyl group having 1 to 3 carbon atoms.
- R s2 to R s4 are hydrogen atoms.
- the straight-chain alkyl group having 1 to 3 carbon atoms is preferably a methyl group.
- R s5 a linear alkyl group having 2 to 4 carbon atoms or a phenyl group is preferable.
- a 14 is an optionally substituted m-valent hydrocarbon group having 6 to 20 carbon atoms and containing one or more aromatic rings, wherein the hydrocarbon group is one or more A group obtained by removing m hydrogen atoms from a hydrocarbon compound having 6 to 20 carbon atoms including an aromatic ring.
- a hydrocarbon compound having 6 to 20 carbon atoms including an aromatic ring.
- examples of such a hydrocarbon compound include benzene, toluene, xylene, ethylbenzene, biphenyl, naphthalene, anthracene, and phenanthrene.
- part or all of the hydrogen atoms may be further substituted with a substituent.
- Examples of such a substituent include a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, and a nitro atom.
- a 14 is preferably a group derived from benzene, biphenyl and the like.
- a 15 is —O— or —S—, preferably —O—.
- a 16 is a (n + 1) -valent aromatic hydrocarbon group having 6 to 20 carbon atoms
- the aromatic hydrocarbon group is an aromatic hydrocarbon compound having 6 to 20 carbon atoms. It is a group obtained by removing (n + 1) hydrogen atoms from the ring.
- aromatic hydrocarbon compounds include benzene, toluene, xylene, biphenyl, naphthalene, anthracene, and pyrene.
- a 16 is preferably a group derived from naphthalene or anthracene, and more preferably a group derived from naphthalene.
- R s6 and R s7 are each independently a hydrogen atom or a linear or branched monovalent aliphatic hydrocarbon group
- R s8 is a linear or branched monovalent aliphatic hydrocarbon group. It is a valent aliphatic hydrocarbon group.
- the total number of carbon atoms of R s6 , R s7 and R s8 is 6 or more.
- the upper limit of the total number of carbon atoms of R s6 , R s7 and R s8 is not particularly limited, but is preferably 20 or less, and more preferably 10 or less.
- linear or branched monovalent aliphatic hydrocarbon group examples include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, s-butyl, t- C1-C20 alkyl groups such as butyl group, n-hexyl group, n-octyl group, 2-ethylhexyl group and decyl group; vinyl group, 1-propenyl group, 2-propenyl group, isopropenyl group, 1- Examples thereof include an alkenyl group having 2 to 20 carbon atoms such as a methyl-2-propenyl group, a 1-butenyl group, a 2-butenyl group, a 3-butenyl group, and a hexenyl group.
- R s6 is preferably a hydrogen atom
- R s7 and R s8 are each independently preferably an alkyl group having 1 to 6 carbon atom
- R s9 to R s13 each independently represent a hydrogen atom, a nitro group, a cyano group, a halogen atom, an alkyl group having 1 to 10 carbon atoms, a halogenated alkyl group having 1 to 10 carbon atoms, or It is a halogenated alkenyl group having 2 to 10 carbon atoms.
- the alkyl group having 1 to 10 carbon atoms may be linear, branched or cyclic, and specific examples thereof include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group and an isobutyl group.
- the halogenated alkyl group having 1 to 10 carbon atoms is not particularly limited as long as part or all of the hydrogen atoms of the alkyl group having 1 to 10 carbon atoms are substituted with halogen atoms.
- Specific examples thereof include a trifluoromethyl group, a 2,2,2-trifluoroethyl group, a 1,1,2,2,2-pentafluoroethyl group, a 3,3,3-trifluoropropyl group, 2,3,3,3-pentafluoropropyl group, 1,1,2,2,3,3,3-heptafluoropropyl group, 4,4,4-trifluorobutyl group, 3,3,4,4 , 4-pentafluorobutyl group, 2,2,3,3,4,4,4-heptafluorobutyl group, 1,1,2,2,3,3,4,4,4-nonafluorobutyl group, etc. Is mentioned.
- the halogenated alkenyl group having 2 to 10 carbon atoms is not particularly limited as long as part or all of the hydrogen atoms of the alkenyl group having 2 to 10 carbon atoms are substituted with halogen atoms.
- Specific examples thereof include a perfluorovinyl group, a perfluoro-1-propenyl group, a perfluoro-2-propenyl group, a perfluoro-1-butenyl group, a perfluoro-2-butenyl group, and a perfluoro-3-butenyl group. And the like.
- R s9 a nitro group, a cyano group, a halogenated alkyl group having 1 to 10 carbon atoms and an alkenyl halide group having 2 to 10 carbon atoms are preferable, and a nitro group, a cyano group, and a carbon atom having 1 to 4 carbon atoms are preferable.
- a nitro group, a cyano group, a trifluoromethyl group and a perfluoropropenyl group are more preferable.
- R s10 to R s13 are preferably a halogen atom, more preferably a fluorine atom.
- a 17 is —O—, —S— or —NH—, preferably —O—.
- a 18 is an (n + 1) -valent aromatic hydrocarbon group having 6 to 20 carbon atoms, and this aromatic hydrocarbon group is an aromatic hydrocarbon compound having 6 to 20 carbon atoms. It is a group obtained by removing (n + 1) hydrogen atoms from the ring.
- aromatic hydrocarbon compounds include benzene, toluene, xylene, biphenyl, naphthalene, anthracene, and pyrene.
- a 18 is preferably a group derived from naphthalene or anthracene, and more preferably a group derived from naphthalene.
- R s14 to R s17 each independently represent a hydrogen atom or a linear or branched monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms.
- the monovalent aliphatic hydrocarbon group include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, s-butyl, t-butyl, n-pentyl, C1-C20 alkyl groups such as cyclopentyl group, n-hexyl group, cyclohexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group, n-undecyl group and n-dodecyl group A group having 2 to 2 carbon atoms such as a vinyl group, a 1-propenyl group, a 2-propenyl group, an isopropen
- R s18 is a linear or branched monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or OR s19 .
- R s19 is an optionally substituted monovalent hydrocarbon group having 2 to 20 carbon atoms.
- Examples of the linear or branched monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms represented by R s18 include the same as described above.
- R s18 is a monovalent aliphatic hydrocarbon group
- R s18 is preferably an alkyl group having 1 to 20 carbon atoms, more preferably an alkyl group having 1 to 10 carbon atoms, and an alkyl group having 1 to 8 carbon atoms. Even more preferred.
- Examples of the monovalent hydrocarbon group having 2 to 20 carbon atoms represented by R s19 include the above-mentioned monovalent aliphatic hydrocarbon groups other than methyl group, and aryl groups such as phenyl group, naphthyl group and phenanthryl group. And the like. Among them, R s19 is preferably a straight-chain alkyl group having 2 to 4 carbon atoms or a phenyl group. Examples of the substituent which the monovalent hydrocarbon group may have include a fluorine atom, an alkoxy group having 1 to 4 carbon atoms, a nitro group and a cyano group.
- Suitable arylsulfonic acid ester compounds include, but are not limited to, the following.
- the amount of the arylsulfonic acid ester compound to be used is about 0.01 to 20.0 based on the aniline derivative 1 represented by the formula (1) in a substance amount (molar) ratio. However, it is preferably about 0.1 to 10.0, more preferably about 0.5 to 5.0.
- an organic dopant When an organic dopant is used as the dopant, its molecular weight is not particularly limited, but when used together with the aniline derivative represented by the formula (1), good solubility in an organic solvent is ensured, and uniformity is ensured. From the viewpoint of obtaining a high composition with good reproducibility, it is preferably 5,000 or less, more preferably 3,000 or less, and even more preferably 2,000 or less. In particular, the molecular weight of the arylsulfonic acid compound used as the dopant is preferably 2,000 or less, more preferably 1,500 or less from the same viewpoint.
- arylsulfonic acid compounds considering that a thin film with high charge transportability can be obtained with good reproducibility, availability of dopants, etc.
- dopant arylsulfonic acid compounds, arylsulfonic acid ester compounds, halotetracyanoquinodimethane and benzoquinone
- an arylsulfonic acid ester compound When further considering obtaining a charge transporting composition having excellent stability, it is more preferable to use an arylsulfonic acid ester compound.
- the charge transporting substance and the dopant are preferably completely dissolved or uniformly dispersed in the solvent, and most preferably completely dissolved.
- the charge transporting composition of the present invention is used for improving the injection property into the hole transporting layer when the obtained thin film is used as a hole injecting layer of an organic EL device, and improving the life characteristics of the device. It may contain a compound or a nonionic fluorinated surfactant, and its content is usually about 1 to 30 parts by mass based on 100 parts by mass of the total of the charge transporting substance and the dopant.
- the concentration of the solid content in the charge transporting composition of the present invention is generally about 0.1 to 20% by mass, preferably 0.5, from the viewpoint of securing a sufficient film thickness while suppressing the deposition of the charge transporting substance. 1515% by mass.
- the viscosity of the charge transporting composition of the present invention is usually 1 to 50 mPa ⁇ s at 25 ° C., and the surface tension is usually 20 to 50 mN / m at 25 ° C.
- the viscosity and surface tension of the charge transporting composition of the present invention are determined by changing the type of the organic solvent used, their ratio, the solid content, and the like, in consideration of various factors such as a coating method to be used and a desired film thickness. Can be adjusted.
- the charge transporting composition of the present invention can be produced by dissolving the aniline derivative represented by the formula (1) in an organic solvent.
- the aniline derivative may be dissolved in an organic solvent in advance, and the other organic solvent may be sequentially added thereto.
- a mixed solvent of all the solvents to be used may be prepared in advance, and the aniline derivative may be dissolved therein.
- the components contained in the composition may be heated so as to accelerate the dissolution of the aniline derivative and the like, while taking care not to decompose or deteriorate the components.
- the same method is followed when the charge transporting composition of the present invention contains components other than the aniline derivative and the solvent.
- the charge transporting composition of the present invention is obtained by dissolving the charge transporting substance in an organic solvent from the viewpoint of obtaining a thinner film having higher flatness with good reproducibility, and then filtering using a submicrometer-order filter or the like. May be.
- the method of applying the composition is not particularly limited, and examples thereof include a dipping method, a spin coating method, a transfer printing method, a roll coating method, an ink jet method, a spray method, and a slit coating method. It is preferable to adjust the viscosity and surface tension of the composition according to the application method.
- the firing atmosphere is not particularly limited, and a uniform thin film surface and a thin film having a charge transporting property can be obtained not only in an air atmosphere (under air) but also in an inert gas such as nitrogen or in a vacuum. Bake in an atmosphere.
- firing conditions are not particularly limited. For example, heating and firing are performed using a hot plate.
- the firing temperature is appropriately determined within the range of 100 to 260 ° C.
- the firing time is appropriately determined within the range of 1 minute to 1 hour in consideration of the desired charge transporting property.
- multi-stage firing may be performed at two or more different temperatures.
- the thickness of the charge transporting thin film is not particularly limited, but is preferably 5 to 300 nm when used as a functional layer of an organic EL device.
- a method of changing the film thickness for example, there is a method of changing a solid concentration in the charge transporting composition or a method of changing a liquid amount at the time of application.
- Organic EL device has a pair of electrodes, and has the charge transporting thin film of the present invention as a functional layer between these electrodes.
- an electron block layer or the like may be provided between the light emitting layer and the anode, and a hole (hole) block layer or the like may be provided between the light emitting layer and the cathode as necessary.
- the hole injection layer, the hole transport layer, or the hole injection / transport layer may also have a function as an electron blocking layer or the like, and the electron injection layer, the electron transport layer, or the electron injection / transport layer may be a hole (hole). It may have a function as a block layer or the like.
- an optional functional layer can be provided between the layers as needed.
- A anode / hole injection layer / hole transport layer / emission layer / electron transport layer / electron injection layer / cathode
- b anode / hole injection layer / hole transport layer / emission layer / electron injection transport layer / Cathode
- c anode / hole injection / transport layer / emission layer / electron transport layer / electron injection layer / cathode
- d anode / hole injection / transport layer / emission layer / electron injection / transport layer / cathode
- e anode / positive Hole injection layer / hole transport layer / emission layer / cathode
- f anode / hole injection / transport layer / emission layer / cathode
- “Hole injection layer”, “hole transport layer” and “hole injection transport layer” are layers formed between the light emitting layer and the anode, and transport holes from the anode to the light emitting layer. It has a function. When only one layer of the hole transporting material is provided between the light emitting layer and the anode, it is a “hole injection / transport layer”, and the layer of the hole transporting material is provided between the light emitting layer and the anode. Is provided, two or more layers are a "hole injection layer” and a layer near the anode is a "hole transport layer".
- the hole injection (transport) layer a thin film that is excellent in not only the property of accepting holes from the anode but also the property of injecting holes into the hole transport (emission) layer is used.
- Electrode layer is layers formed between the light emitting layer and the cathode, and have a function of transporting electrons from the cathode to the light emitting layer. It is. When only one layer of the electron transporting material is provided between the light emitting layer and the cathode, it is an “electron injection and transport layer”, and two layers of the electron transporting material are provided between the light emitting layer and the cathode. When provided as described above, the layer close to the cathode is an “electron injection layer”, and the other layers are “electron transport layers”.
- the “light-emitting layer” is an organic layer having a light-emitting function, and includes a host material and a dopant material when a doping system is employed.
- the host material mainly has a function of promoting recombination of electrons and holes and confining excitons in the light-emitting layer, and the dopant material efficiently emits excitons obtained by the recombination.
- a host material has a function of mainly confining excitons generated by a dopant in a light-emitting layer.
- the charge transporting thin film of the present invention is suitable as a functional layer provided between an anode and a light emitting layer in an organic EL device, and is more suitable as a hole injection layer, a hole transport layer, and a hole injection transport layer. It is even more suitable as a hole injection layer.
- Materials and methods for producing an organic EL device using the charge transporting composition of the present invention include, but are not limited to, the following.
- An example of a method for producing an OLED device having a hole transport layer comprising a thin film obtained from the charge transport composition of the present invention is as follows.
- the electrode is preferably subjected to cleaning with alcohol, pure water, or the like, or surface treatment such as UV ozone treatment or oxygen-plasma treatment in advance within a range that does not adversely affect the electrode.
- a hole injection layer composed of the charge transporting thin film of the present invention is formed by the method described above. This is introduced into a vacuum evaporation apparatus, and a hole transport layer, a light emitting layer, an electron transport layer, an electron transport layer / hole block layer, and a cathode metal are sequentially deposited.
- a composition for forming a hole transporting layer containing a hole transporting polymer and a composition for forming a light emitting layer containing a light emitting polymer are used to form these layers by a wet process. Note that, if necessary, an electron block layer may be provided between the light emitting layer and the hole transport layer.
- anode material examples include a transparent electrode typified by indium tin oxide (ITO) and indium zinc oxide (IZO), and a metal anode composed of a metal typified by aluminum, an alloy thereof, and the like. It is preferable that the material has been subjected to a chemical treatment. A polythiophene derivative or a polyaniline derivative having a high charge transporting property can also be used.
- the other metal constituting the metal anode includes, but is not limited to, gold, silver, copper, indium and alloys thereof.
- Examples of the material for forming the light emitting layer include aluminum complexes of 8-hydroxyquinoline such as tris (8-quinolinolato) aluminum (III) (Alq 3 ) and bis (8-quinolinolato) zinc (II), and metal complexes such as zinc complex.
- 8-hydroxyquinoline such as tris (8-quinolinolato) aluminum (III) (Alq 3 ) and bis (8-quinolinolato) zinc (II)
- metal complexes such as zinc complex.
- Low molecular light emitting materials such as metal complexes of 10,10-hydroxybenzo [h] quinoline, bisstyrylbenzene derivatives, bisstyrylarylene derivatives, metal complexes of (2-hydroxyphenyl) benzothiazole, and silole derivatives; poly (p-phenylenevinylene) ), Poly [2-methoxy-5- (2-ethylhexyloxy) -1,4-phenylenevinylene], poly (3-alkylthiophene), polyvinylcarbazole, and other high molecular compounds mixed with a light emitting material and an electron transfer material And the like, but are not limited thereto.
- the light emitting layer When the light emitting layer is formed by vapor deposition, the light emitting layer may be co-deposited with a light emitting dopant.
- the light emitting dopant may be a metal complex such as tris (2-phenylpyridine) iridium (III) (Ir (PPy) 3 ). And naphthacene derivatives such as rubrene, quinacridone derivatives, condensed polycyclic aromatic rings such as perylene, and the like, but are not limited thereto.
- Materials for forming the electron transport layer / hole block layer include, but are not limited to, oxydiazole derivatives, triazole derivatives, phenanthroline derivatives, phenylquinoxaline derivatives, benzimidazole derivatives, and pyrimidine derivatives.
- Materials for forming the electron injection layer include metal oxides such as lithium oxide (Li 2 O), magnesium oxide (MgO), and alumina (Al 2 O 3 ), lithium fluoride (LiF), and sodium fluoride (NaF). But not limited to metal fluorides
- cathode material examples include, but are not limited to, aluminum, magnesium-silver alloy, aluminum-lithium alloy and the like.
- a material for forming the electron blocking layer includes, but is not limited to, tris (phenylpyrazole) iridium and the like.
- the luminescent polymer examples include polyfluorene derivatives such as poly (9,9-dialkylfluorene) (PDAF), poly (2-methoxy-5- (2′-ethylhexoxy) -1,4-phenylenevinylene) (MEH- Polyphenylene vinylene derivatives such as PPV); polythiophene derivatives such as poly (3-alkylthiophene) (PAT); and polyvinyl carbazole (PVCz).
- polyfluorene derivatives such as poly (9,9-dialkylfluorene) (PDAF), poly (2-methoxy-5- (2′-ethylhexoxy) -1,4-phenylenevinylene) (MEH- Polyphenylene vinylene derivatives such as PPV)
- polythiophene derivatives such as poly (3-alkylthiophene) (PAT); and polyvinyl carbazole (PVCz).
- the materials constituting the anode, the cathode, and the layers formed between them differ depending on whether an element having a bottom emission structure or a top emission structure is manufactured. Therefore, the material is appropriately selected in consideration of this point.
- a transparent anode is used on the substrate side, and light is extracted from the substrate side, whereas in a top emission structure element, a reflective anode made of metal is used, and in a direction opposite to the substrate. Since light is extracted from a certain transparent electrode (cathode) side, regarding the anode material, a transparent anode such as ITO is used when manufacturing a device having a bottom emission structure, and Al / is used when manufacturing a device having a top emission structure. A reflective anode such as Nd is used.
- the organic EL device of the present invention may be sealed together with a water catching agent, if necessary, according to a standard method, in order to prevent deterioration in characteristics.
- LDI-MS Bruker AutoFlex
- 1 H-NMR JNM-ECP300 FT NMR SYSTEM manufactured by JEOL Ltd.
- Substrate cleaning Choshu Sangyo Co., Ltd. substrate cleaning system (reduced pressure plasma method)
- Application of the composition Spin coater MS-A100 manufactured by Mikasa Corporation
- Film thickness measurement Surfcorder ET-4000, a fine shape measuring instrument manufactured by Kosaka Laboratory Co., Ltd.
- Fabrication of element Choshu Sangyo Co., Ltd.
- Multi-channel IVL measurement device manufactured by EC Corporation (8) Measurement of refractive index (n) and extinction coefficient (k): manufactured by JA Woollam Japan Multi-entry angle spectroscopic ellipsometer VASE
- Example 1-2 To a mixture of 0.243 g of the aniline derivative A and 0.283 g of the arylsulfonic acid ester B, 5 g of triethylene glycol butyl methyl ether, 3 g of butyl benzoate and 2 g of dimethyl phthalate were added and stirred at room temperature to dissolve the resulting solution. The mixture was filtered through a syringe filter having a pore size of 0.2 ⁇ m to obtain a charge transporting composition.
- Example 1-3 To a mixture of 0.243 g of the aniline derivative A and 0.283 g of the arylsulfonic acid ester B, 3 g of 3-phenoxytoluene and 7 g of butyl benzoate were added, and the mixture was stirred and dissolved at room temperature to obtain a solution having a pore size of 0.2. The mixture was filtered with a 2 ⁇ m syringe filter to obtain a charge transporting composition.
- Example 1-1 Preparation of a charge transporting composition was attempted in the same manner as in Example 1-1, except that an aniline derivative C represented by the following formula was used instead of the aniline derivative A.
- an aniline derivative C represented by the following formula was used instead of the aniline derivative A.
- the solid content did not dissolve even when stirred at room temperature, and the solid content did not dissolve even when heated and stirred at 50 ° C., and the solid content was dissolved when heated and stirred at 80 ° C.
- the obtained solution was filtered with a syringe filter having a pore size of 0.2 ⁇ m to obtain a charge transporting composition.
- the aniline derivative C was synthesized according to the method described in International Publication No. 2015/137395.
- Example 1-2 An attempt was made to prepare a charge transporting composition in the same manner as in Example 1-2, except that aniline derivative C was used instead of aniline derivative A. However, the solid content does not dissolve even when stirred at room temperature, and does not dissolve even when heated and stirred at any temperature of 50 ° C. or 80 ° C., so that a charge transporting thin film can be produced. A uniform charge transporting composition was not obtained.
- Example 1-3 An attempt was made to prepare a charge transporting composition in the same manner as in Example 1-3, except that aniline derivative C was used instead of aniline derivative A. However, the solid content did not dissolve even when stirred at room temperature, and the solid content did not dissolve even when heated and stirred at 50 ° C., and the solid content was dissolved when heated and stirred at 80 ° C. The obtained solution was filtered with a syringe filter having a pore size of 0.2 ⁇ m to obtain a charge transporting composition.
- Example 2 and Comparative Example 2 Each of the charge transporting compositions obtained in Example 1-1 and Comparative Example 1-1 was applied to a quartz substrate using a spin coater, and then dried at 80 ° C. for 1 minute in an air atmosphere. Firing at 15 ° C. for 15 minutes produced a uniform thin film of 60 nm on the substrate.
- the extinction coefficient k (average extinction coefficient at a wavelength of 400 nm to 800 nm) and the refractive index n (average refractive index at a wavelength of 400 nm to 800 nm) of each thin film were measured. Table 2 shows the results.
- the thin film obtained from the composition of the present invention exhibited a lower extinction coefficient, was highly transparent, and had a high refractive index, as compared with the thin film obtained from the composition of the comparative example.
- Table 2 the thin film obtained from the composition of the present invention exhibited a lower extinction coefficient, was highly transparent, and had a high refractive index, as compared with the thin film obtained from the composition of the comparative example.
- ITO indium tin oxide
- Example 3 The composition obtained in Example 1-1 was applied to an ITO substrate using a spin coater, dried at 80 ° C. for 1 minute in the air, and baked at 200 ° C. for 15 minutes to obtain a film having a thickness of 60 nm.
- ⁇ -NPD N, N′-di (1-naphthyl
- a vapor deposition device vacuum degree: 1.0 ⁇ 10 ⁇ 5 Pa, vapor deposition rate: 0.2 nm / sec).
- -N, N'-diphenylbenzidine was formed at a thickness of 0.2 nm / sec to form a 30 nm film, and an 80 nm aluminum thin film was further formed thereon to produce a device.
- Comparative Example 3 A device was produced in the same manner as in Example 3, except that the composition obtained in Comparative Example 1-1 was used instead of the composition obtained in Example 1-1.
- Example 4 In the same manner as in Example 3, a charge transporting thin film was formed on an ITO substrate. A 0.6% by mass xylene solution of a TFB polymer (LT-N148, manufactured by Luminescence Technology) was applied thereon by spin coating in a glove box under a nitrogen atmosphere, and then baked at 130 ° C. for 10 minutes to obtain a charge of 20 nm. A transportable thin film was formed as a hole transport layer. Further, an 80 nm aluminum thin film was formed thereon in the same manner as in Example 3 to fabricate a device.
- TFB polymer LT-N148, manufactured by Luminescence Technology
- Comparative Example 4 A device was manufactured in the same manner as in Example 4, except that the composition obtained in Comparative Example 1-1 was used instead of the composition obtained in Example 1-1.
- the charge transporting thin film obtained from the composition of the present invention was more excellent in hole injection into the hole transporting layer than the charge transporting thin film obtained from the composition of Comparative Example. .
- an organic EL device having high characteristics can be expected.
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Abstract
Provided, for example, is a charge-transporting composition including the aniline derivative shown in the formula that follows. (In the formula, Ph is a phenyl group.)
Description
本発明は、電荷輸送性組成物に関する。
The present invention relates to a charge transporting composition.
有機エレクトロルミネッセンス(以下、有機ELともいう。)素子に用いられる電荷輸送性薄膜は、その着色が有機EL素子の色純度及び色再現性を低下させる等の事情から、近年、可視領域での透過率が高く、透明性に優れることが望まれている(特許文献1)。この点に鑑み、本出願人は、可視領域での着色が抑制された、透明性に優れた電荷輸送性薄膜を与えるウェットプロセス用材料を既に見出している(特許文献1、2)。
In recent years, a charge transporting thin film used in an organic electroluminescence (hereinafter, also referred to as an organic EL) device has been transmitted in a visible region in recent years due to the fact that the coloring deteriorates the color purity and color reproducibility of the organic EL device. It is desired that the ratio is high and the transparency is excellent (Patent Document 1). In view of this, the present applicant has already found a material for a wet process that provides a charge transporting thin film with excellent transparency and suppressed coloring in the visible region (Patent Documents 1 and 2).
一方、これまで、有機EL素子を高性能化するために様々な取り込みがなされてきているが、光取出し効率を向上させる等の目的で、用いる機能膜の屈折率を調整する取り組みがなされている。具体的には、素子の全体構成や隣接する他の部材の屈折率を考慮して、相対的に高いあるいは低い屈折率の正孔注入層や正孔輸送層を用いることで、素子の高効率化を図る試みがなされている(例えば、特許文献3、4)。このように、屈折率は有機EL素子の設計上重要な要素であり、有機EL素子用材料では屈折率も考慮すべき重要な物性値と考えられている。
On the other hand, various approaches have been taken so far to improve the performance of the organic EL element, but efforts have been made to adjust the refractive index of the functional film to be used for the purpose of improving the light extraction efficiency. . Specifically, by using a hole injection layer or a hole transport layer having a relatively high or low refractive index in consideration of the entire configuration of the element and the refractive index of other adjacent members, high efficiency of the element can be obtained. Attempts have been made to achieve this (for example, Patent Documents 3 and 4). As described above, the refractive index is an important factor in the design of the organic EL element, and the material for the organic EL element is considered to be an important physical property value in which the refractive index should also be considered.
本発明は、前記事情に鑑みてなされたものであり、電荷輸送性が良好で、消衰係数(k)が低く透明性が良好で、屈折率(n)が高い薄膜を与え、この薄膜を正孔注入層等に適用した場合に優れた特性を有する有機EL素子を実現できる電荷輸送性組成物を提供することを目的とする。
The present invention has been made in view of the above circumstances, and provides a thin film having good charge transportability, low extinction coefficient (k), good transparency, and high refractive index (n). It is an object of the present invention to provide a charge transporting composition capable of realizing an organic EL device having excellent characteristics when applied to a hole injection layer or the like.
本発明者は、前記目的を達成するために鋭意検討を重ねた結果、分子内にN,N,N',N'-テトラ(カルバゾール-2-イル)-パラフェニレンジアミン構造を有する所定のアニリン誘導体を含む電荷輸送性組成物が、類似構造のアニリン誘導体を用いた場合と比べ、消衰係数(k)が低く透明性が良好で、屈折率(n)が高い電荷輸送性薄膜を与えるだけでなく、その組成物自体の保存安定性も優れること、及び当該電荷輸送性薄膜を正孔注入層等に適用した場合に優れた特性を有する有機EL素子を与えることを見出し、本発明を完成させた。
The present inventors have conducted intensive studies to achieve the above object, and as a result, have found that certain anilines having an N, N, N ', N'-tetra (carbazol-2-yl) -paraphenylenediamine structure in the molecule The charge-transporting composition containing the derivative only provides a charge-transporting thin film having a low extinction coefficient (k), good transparency, and a high refractive index (n), as compared with the case of using an aniline derivative having a similar structure. In addition, the present inventors have found that the composition itself has excellent storage stability, and that the present invention provides an organic EL device having excellent characteristics when the charge transporting thin film is applied to a hole injection layer or the like. I let it.
したがって、本発明は、下記電荷輸送性組成物を提供する。
1.下記式(1)で表されるアニリン誘導体を含む電荷輸送性組成物。
[式中、各Arは、互いに独立に、下記式(Ar1)~(Ar9)のいずれかで表される基である。
(式中、R1~R21は、互いに独立に、水素原子、Z1で置換されていてもよい炭素数1~20のアルキル基、Z1で置換されていてもよい炭素数2~20のアルケニル基、Z1で置換されていてもよい炭素数2~20のアルキニル基、Z2で置換されていてもよい炭素数6~20のアリール基又はZ2で置換されていてもよい素数2~20のヘテロアリール基であり、
Z1は、ハロゲン原子、ニトロ基、シアノ基、Z3で置換されていてもよい炭素数6~20のアリール基又はZ3で置換されていてもよい炭素数2~20のヘテロアリール基であり、
Z2は、ハロゲン原子、ニトロ基、シアノ基、Z3で置換されていてもよい炭素数1~20のアルキル基、Z3で置換されていてもよい炭素数2~20のアルケニル基又はZ3で置換されていてもよい炭素数2~20のアルキニル基であり、
Z3は、ハロゲン原子、ニトロ基又はシアノ基である。)]
2.Arが、全て同じ基である1の電荷輸送性組成物。
3.Arが、式(Ar1)~(Ar5)のいずれかで表される基である2の電荷輸送性組成物。
4.Arが、式(Ar1)で表される基である3の電荷輸送性組成物。
5.更に、ドーパントを含む1~4のいずれかの電荷輸送性組成物。
6.前記ドーパントが、アリールスルホン酸エステル化合物である5の電荷輸送性組成物。
7.1~5のいずれかの電荷輸送性組成物を用いて作製される電荷輸送性薄膜。
8.7の電荷輸送性薄膜を備える有機EL素子。 Therefore, the present invention provides the following charge transporting composition.
1. A charge transport composition containing an aniline derivative represented by the following formula (1).
[In the formula, each Ar is independently a group represented by any of the following formulas (Ar1) to (Ar9).
(Wherein, R 1 to R 21 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms which may be substituted by Z 1 , or a C 2 to 20 carbon atom which may be substituted by Z 1 alkenyl groups, Z 1 at carbon atoms which may be substituted have 2-20 alkynyl group, which may prime be substituted by an aryl group, or Z 2 of which may 6 carbon atoms also be ~ 20 substituted by Z 2 2-20 heteroaryl groups,
Z 1 is a halogen atom, a nitro group, a cyano group, a heteroaryl group aryl or Z 3 which do 2-20 carbon atoms substituted with Z 3 are carbon atoms that may 6 to be 20 substituted with Yes,
Z 2 is a halogen atom, a nitro group, a cyano group, Z 3-substituted of having 1 to 20 carbon atoms in the alkyl group, an alkenyl group of Z 3 is 1-2 carbon atoms which may be 20 substituted by or Z An alkynyl group having 2 to 20 carbon atoms which may be substituted by 3 ,
Z 3 is a halogen atom, a nitro group or a cyano group. )]
2. 1. The charge transporting composition according to 1, wherein Ar is the same group.
3. 2. The charge transporting composition according to 2, wherein Ar is a group represented by any one of formulas (Ar1) to (Ar5).
4. 3. The charge transporting composition according to 3, wherein Ar is a group represented by the formula (Ar1).
5. The charge transporting composition according to any one of 1 to 4, further comprising a dopant.
6. 5. The charge transporting composition according to 5, wherein the dopant is an arylsulfonic acid ester compound.
7. A charge transporting thin film produced using the charge transporting composition of any one of 1 to 5.
An organic EL device comprising the charge transporting thin film of 8.7.
1.下記式(1)で表されるアニリン誘導体を含む電荷輸送性組成物。
Z1は、ハロゲン原子、ニトロ基、シアノ基、Z3で置換されていてもよい炭素数6~20のアリール基又はZ3で置換されていてもよい炭素数2~20のヘテロアリール基であり、
Z2は、ハロゲン原子、ニトロ基、シアノ基、Z3で置換されていてもよい炭素数1~20のアルキル基、Z3で置換されていてもよい炭素数2~20のアルケニル基又はZ3で置換されていてもよい炭素数2~20のアルキニル基であり、
Z3は、ハロゲン原子、ニトロ基又はシアノ基である。)]
2.Arが、全て同じ基である1の電荷輸送性組成物。
3.Arが、式(Ar1)~(Ar5)のいずれかで表される基である2の電荷輸送性組成物。
4.Arが、式(Ar1)で表される基である3の電荷輸送性組成物。
5.更に、ドーパントを含む1~4のいずれかの電荷輸送性組成物。
6.前記ドーパントが、アリールスルホン酸エステル化合物である5の電荷輸送性組成物。
7.1~5のいずれかの電荷輸送性組成物を用いて作製される電荷輸送性薄膜。
8.7の電荷輸送性薄膜を備える有機EL素子。 Therefore, the present invention provides the following charge transporting composition.
1. A charge transport composition containing an aniline derivative represented by the following formula (1).
Z 1 is a halogen atom, a nitro group, a cyano group, a heteroaryl group aryl or Z 3 which do 2-20 carbon atoms substituted with Z 3 are carbon atoms that may 6 to be 20 substituted with Yes,
Z 2 is a halogen atom, a nitro group, a cyano group, Z 3-substituted of having 1 to 20 carbon atoms in the alkyl group, an alkenyl group of Z 3 is 1-2 carbon atoms which may be 20 substituted by or Z An alkynyl group having 2 to 20 carbon atoms which may be substituted by 3 ,
Z 3 is a halogen atom, a nitro group or a cyano group. )]
2. 1. The charge transporting composition according to 1, wherein Ar is the same group.
3. 2. The charge transporting composition according to 2, wherein Ar is a group represented by any one of formulas (Ar1) to (Ar5).
4. 3. The charge transporting composition according to 3, wherein Ar is a group represented by the formula (Ar1).
5. The charge transporting composition according to any one of 1 to 4, further comprising a dopant.
6. 5. The charge transporting composition according to 5, wherein the dopant is an arylsulfonic acid ester compound.
7. A charge transporting thin film produced using the charge transporting composition of any one of 1 to 5.
An organic EL device comprising the charge transporting thin film of 8.7.
本発明の電荷輸送性組成物を用いることで、類似構造のアニリン誘導体を含む組成物を用いた場合と比べ、高い透明性(低消衰係数(k))と高い屈折率(n)の電荷輸送性薄膜を作製することができる。また、本発明の電荷輸送性組成物は、類似構造のアニリン誘導体を含む組成物と比べ、保存安定性に優れる。そして、本発明の電荷輸送性組成物から得られる電荷輸送性薄膜は、有機EL素子をはじめとした電子素子用薄膜として好適に用いることができ、有機EL素子の陽極と発光層の間に設けられる機能層、特に正孔注入層として用いることで、特性に優れた有機EL素子が得られる。
By using the charge transporting composition of the present invention, compared to the case of using a composition containing an aniline derivative having a similar structure, a charge having high transparency (low extinction coefficient (k)) and high refractive index (n) is used. A transportable thin film can be manufactured. Further, the charge transporting composition of the present invention is superior in storage stability to a composition containing an aniline derivative having a similar structure. The charge transporting thin film obtained from the charge transporting composition of the present invention can be suitably used as a thin film for an electronic element such as an organic EL element, and is provided between an anode and a light emitting layer of the organic EL element. An organic EL device having excellent characteristics can be obtained by using it as a functional layer, in particular, a hole injection layer.
[電荷輸送性組成物]
本発明の電荷輸送性組成物は、下記式(1)で表されるアニリン誘導体を含む。
[Charge transporting composition]
The charge transporting composition of the present invention contains an aniline derivative represented by the following formula (1).
本発明の電荷輸送性組成物は、下記式(1)で表されるアニリン誘導体を含む。
The charge transporting composition of the present invention contains an aniline derivative represented by the following formula (1).
式(1)中、各Arは、互いに独立に、下記式(Ar1)~(Ar9)のいずれかで表される基である。
In the formula (1), each Ar is independently a group represented by any of the following formulas (Ar1) to (Ar9).
式(Ar1)~(Ar9)中、R1~R21は、互いに独立に、水素原子、Z1で置換されていてもよい炭素数1~20のアルキル基、Z1で置換されていてもよい炭素数2~20のアルケニル基、Z1で置換されていてもよい炭素数2~20のアルキニル基、Z2で置換されていてもよい炭素数6~20のアリール基又はZ2で置換されていてもよい炭素数2~20のヘテロアリール基である。Z1は、ハロゲン原子、ニトロ基、シアノ基、Z3で置換されていてもよい炭素数6~20のアリール基又はZ3で置換されていてもよい炭素数2~20のヘテロアリール基である。Z2は、ハロゲン原子、ニトロ基、シアノ基、Z3で置換されていてもよい炭素数1~20のアルキル基、Z3で置換されていてもよい炭素数2~20のアルケニル基又はZ3で置換されていてもよい炭素数2~20のアルキニル基である。Z3は、ハロゲン原子、ニトロ基又はシアノ基である。
In the formulas (Ar1) to (Ar9), R 1 to R 21 each independently represent a hydrogen atom, an alkyl group having 1 to 20 carbon atoms which may be substituted by Z 1 , and which may be substituted by Z 1. an alkenyl group having 2 to 20 carbon atoms, substituted with an aryl group, or Z 2 alkynyl group, Z 2 is optionally carbon atoms 6 to be 20 substituted with Z 1 to 2 carbon atoms which may be ~ 20 substituted by And a heteroaryl group having 2 to 20 carbon atoms. Z 1 is a halogen atom, a nitro group, a cyano group, a heteroaryl group aryl or Z 3 which do 2-20 carbon atoms substituted with Z 3 are carbon atoms that may 6 to be 20 substituted with is there. Z 2 is a halogen atom, a nitro group, a cyano group, Z 3-substituted of having 1 to 20 carbon atoms in the alkyl group, an alkenyl group of Z 3 is 1-2 carbon atoms which may be 20 substituted by or Z An alkynyl group having 2 to 20 carbon atoms which may be substituted by 3 ; Z 3 is a halogen atom, a nitro group or a cyano group.
前記ハロゲン原子としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子等が挙げられるが、フッ素原子が好ましい。
Examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom, and a fluorine atom is preferable.
前記炭素数1~20のアルキル基は、直鎖状、分岐状、環状のいずれでもよく、その具体例としては、メチル基、エチル基、n-プロピル基、イソプロピル基、n-ブチル基、イソブチル基、s-ブチル基、t-ブチル基、n-ペンチル基、n-ヘキシル基、n-ヘプチル基、n-オクチル基、n-ノニル基、n-デシル基等の炭素数1~20の直鎖状又は分岐状アルキル基;シクロプロピル基、シクロブチル基、シクロペンチル基、シクロヘキシル基、シクロヘプチル基、シクロオクチル基、シクロノニル基、シクロデシル基等の炭素数3~20の環状アルキル基が挙げられる。
The alkyl group having 1 to 20 carbon atoms may be linear, branched, or cyclic, and specific examples thereof include methyl, ethyl, n-propyl, isopropyl, n-butyl, and isobutyl. Group having 1 to 20 carbon atoms, such as a s-butyl group, a s-butyl group, a t-butyl group, a n-pentyl group, a n-hexyl group, a n-heptyl group, a n-octyl group, a n-nonyl group and a n-decyl group. A chain or branched alkyl group; and a cyclic alkyl group having 3 to 20 carbon atoms such as a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a cyclononyl group, and a cyclodecyl group.
前記炭素数2~20のアルケニル基は、直鎖状、分岐状、環状のいずれでもよく、その具体例としては、エテニル基、n-1-プロペニル基、n-2-プロペニル基、1-メチルエテニル基、n-1-ブテニル基、n-2-ブテニル基、n-3-ブテニル基、2-メチル-1-プロペニル基、2-メチル-2-プロペニル基、1-エチルエテニル基、1-メチル-1-プロペニル基、1-メチル-2-プロペニル基、n-1-ペンテニル基、n-1-デセニル基等が挙げられる。
The alkenyl group having 2 to 20 carbon atoms may be linear, branched or cyclic, and specific examples thereof include ethenyl, n-1-propenyl, n-2-propenyl, 1-methylethenyl Group, n-1-butenyl group, n-2-butenyl group, n-3-butenyl group, 2-methyl-1-propenyl group, 2-methyl-2-propenyl group, 1-ethylethenyl group, 1-methyl- Examples thereof include a 1-propenyl group, a 1-methyl-2-propenyl group, an n-1-pentenyl group, and an n-1-decenyl group.
前記炭素数2~20のアルキニル基は、直鎖状、分岐状、環状のいずれでもよく、その具体例としては、エチニル基、n-1-プロピニル基、n-2-プロピニル基、n-1-ブチニル基、n-2-ブチニル基、n-3-ブチニル基、1-メチル-2-プロピニル基、n-1-ペンチニル基、n-2-ペンチニル基、n-3-ペンチニル基、n-4-ペンチニル基、1-メチル-n-ブチニル基、2-メチル-n-ブチニル基、3-メチル-n-ブチニル基、1,1-ジメチル-n-プロピニル基、n-1-ヘキシニル基、n-1-デシニル基等が挙げられる。
The alkynyl group having 2 to 20 carbon atoms may be linear, branched or cyclic, and specific examples thereof include an ethynyl group, an n-1-propynyl group, an n-2-propynyl group, and an n-1 -Butynyl group, n-2-butynyl group, n-3-butynyl group, 1-methyl-2-propynyl group, n-1-pentynyl group, n-2-pentynyl group, n-3-pentynyl group, n- 4-pentynyl group, 1-methyl-n-butynyl group, 2-methyl-n-butynyl group, 3-methyl-n-butynyl group, 1,1-dimethyl-n-propynyl group, n-1-hexynyl group, and n-1-decynyl group.
前記炭素数6~20のアリール基の具体例としては、フェニル基、トリル基、1-ナフチル基、2-ナフチル基、1-アントリル基、2-アントリル基、9-アントリル基、1-フェナントリル基、2-フェナントリル基、3-フェナントリル基、4-フェナントリル基、9-フェナントリル基等が挙げられる。
Specific examples of the aryl group having 6 to 20 carbon atoms include phenyl, tolyl, 1-naphthyl, 2-naphthyl, 1-anthryl, 2-anthryl, 9-anthryl, and 1-phenanthryl. , 2-phenanthryl, 3-phenanthryl, 4-phenanthryl, 9-phenanthryl and the like.
前記炭素数2~20のヘテロアリール基の具体例としては、2-チエニル基、3-チエニル基、2-フラニル基、3-フラニル基、2-オキサゾリル基、4-オキサゾリル基、5-オキサゾリル基、3-イソオキサゾリル基、4-イソオキサゾリル基、5-イソオキサゾリル基等の含酸素ヘテロアリール基、2-チアゾリル基、4-チアゾリル基、5-チアゾリル基、3-イソチアゾリル基、4-イソチアゾリル基、5-イソチアゾリル基等の含硫黄ヘテロアリール基、2-イミダゾリル基、4-イミダゾリル基、2-ピリジル基、3-ピリジル基、4-ピリジル基、2-ピラジル基、3-ピラジル基、5-ピラジル基、6-ピラジル基、2-ピリミジル基、4-ピリミジル基、5-ピリミジル基、6-ピリミジル基、3-ピリダジル基、4-ピリダジル基、5-ピリダジル基、6-ピリダジル基、1,2,3-トリアジン-4-イル基、1,2,3-トリアジン-5-イル基、1,2,4-トリアジン-3-イル基、1,2,4-トリアジン-5-イル基、1,2,4-トリアジン-6-イル基、1,3,5-トリアジン-2-イル基、1,2,4,5-テトラジン-3-イル基、1,2,3,4-テトラジン-5-イル基、2-キノリニル基、3-キノリニル基、4-キノリニル基、5-キノリニル基、6-キノリニル基、7-キノリニル基、8-キノリニル基、1-イソキノリニル基、3-イソキノリニル基、4-イソキノリニル基、5-イソキノリニル基、6-イソキノリニル基、7-イソキノリニル基、8-イソキノリニル基、2-キノキサニル基、5-キノキサニル基、6-キノキサニル基、2-キナゾリニル基、4-キナゾリニル基、5-キナゾリニル基、6-キナゾリニル基、7-キナゾリニル基、8-キナゾリニル基、3-シンノリニル基、4-シンノリニル基、5-シンノリニル基、6-シンノリニル基、7-シンノリニル基、8-シンノリニル基等の含窒素ヘテロアリール基等が挙げられる。
Specific examples of the heteroaryl group having 2 to 20 carbon atoms include a 2-thienyl group, a 3-thienyl group, a 2-furanyl group, a 3-furanyl group, a 2-oxazolyl group, a 4-oxazolyl group, and a 5-oxazolyl group. , 3-isoxazolyl, 4-isoxazolyl, 5-isoxazolyl and other oxygen-containing heteroaryl groups, 2-thiazolyl, 4-thiazolyl, 5-thiazolyl, 3-isothiazolyl, 4-isothiazolyl, 5-isothiazolyl, Sulfur-containing heteroaryl groups such as isothiazolyl group, 2-imidazolyl group, 4-imidazolyl group, 2-pyridyl group, 3-pyridyl group, 4-pyridyl group, 2-pyrazyl group, 3-pyrazyl group, 5-pyrazyl group, 6-pyrazyl group, 2-pyrimidyl group, 4-pyrimidyl group, 5-pyrimidyl group, 6-pyrimidyl group, 3-pyridazyl group, -Pyridazyl group, 5-pyridazyl group, 6-pyridazyl group, 1,2,3-triazin-4-yl group, 1,2,3-triazin-5-yl group, 1,2,4-triazin-3- Yl, 1,2,4-triazin-5-yl, 1,2,4-triazin-6-yl, 1,3,5-triazin-2-yl, 1,2,4,5- Tetrazin-3-yl, 1,2,3,4-tetrazin-5-yl, 2-quinolinyl, 3-quinolinyl, 4-quinolinyl, 5-quinolinyl, 6-quinolinyl, 7-quinolinyl Group, 8-quinolinyl group, 1-isoquinolinyl group, 3-isoquinolinyl group, 4-isoquinolinyl group, 5-isoquinolinyl group, 6-isoquinolinyl group, 7-isoquinolinyl group, 8-isoquinolinyl group, 2-quinoxanyl group, 5-quinoxanyl A 6-quinoxanyl group, -Quinazolinyl group, 4-quinazolinyl group, 5-quinazolinyl group, 6-quinazolinyl group, 7-quinazolinyl group, 8-quinazolinyl group, 3-cinnolinyl group, 4-cinnolinyl group, 5-cinnolinyl group, 6-cinnolinyl group, 7 And nitrogen-containing heteroaryl groups such as -cinnolinyl group and 8-cinnolinyl group.
中でも、R1~R21としては、Z2で置換されていてもよい炭素数6~20のアリール基、Z2で置換されていてもよい炭素数2~20のヘテロアリール基が好ましく、Z2で置換されていてもよい炭素数6~20のアリール基がより好ましく、Z2で置換されていてもよいフェニル基、Z2で置換されていてもよい1-ナフチル基、Z2で置換されていてもよい2-ナフチル基がより一層好ましい。また、Z2としては、ハロゲン原子、Z3で置換されていてもよい炭素数1~20のアルキル基、Z3で置換されていてもよい炭素数2~20のアルケニル基が好ましい。Z3としては、ハロゲン原子が好ましく、フッ素原子がより好ましい。
Among these, as R 1 - R 21, an aryl group Z 2 are carbon atoms 6 also be ~ 20 substituted with a heteroaryl group Z 2 is optionally 2-20 carbon atoms preferably substituted with, Z more preferably an aryl group which may having 6 to 20 carbon atoms optionally substituted by 2 phenyl group which may be substituted with Z 2, which may be substituted with Z 2 1-naphthyl group, substituted with Z 2 An optionally substituted 2-naphthyl group is even more preferred. As the Z 2, a halogen atom, an alkyl group of Z 3 are optionally to 1 to 20 carbon atoms substituted with an alkenyl group Z 3 are optionally 2-20 carbon atoms substituted with preferred. As Z 3 , a halogen atom is preferable, and a fluorine atom is more preferable.
本発明においては、アニリン誘導体の合成の容易性の観点から、Arは、全て同じ基であることが好ましい。また、アニリン誘導体の有機溶媒への溶解性を向上させ、均一性の高い組成物を再現性よく得る観点から、式(Ar1)~(Ar5)のいずれかで表される基が好ましく、式(Ar1)で表される基が最適である。
In the present invention, from the viewpoint of ease of synthesis of the aniline derivative, it is preferable that Ars are all the same. Further, from the viewpoint of improving the solubility of the aniline derivative in an organic solvent and obtaining a highly uniform composition with good reproducibility, a group represented by any one of formulas (Ar1) to (Ar5) is preferable. The group represented by Ar1) is optimal.
以下、本発明で好適なアニリン誘導体の具体例を挙げるが、これに限定されない。
(式中、Phは、フェニル基である。)
Hereinafter, specific examples of the aniline derivative suitable for the present invention will be described, but the present invention is not limited thereto.
(In the formula, Ph is a phenyl group.)
本発明で用いるアニリン誘導体は、触媒の存在下、パラフェニレンジアミン(1,4-フェニレンジアミン)と、ハロゲン化又は擬ハロゲン化カルバゾール誘導体Ar-X(Arは、前記と同じ。Xは、ハロゲン原子又は擬ハロゲン基である。)とを反応させることで製造することができる。
The aniline derivative used in the present invention may be a paraphenylenediamine (1,4-phenylenediamine) and a halogenated or pseudohalogenated carbazole derivative Ar-X (where Ar is the same as described above; X is a halogen atom) in the presence of a catalyst. Or a pseudohalogen group).
前記ハロゲン原子としては、前記と同様のものが挙げられるが、塩素原子、臭素原子、ヨウ素原子が好ましい。前記擬ハロゲン基としては、メタンスルホニルオキシ基、トリフルオロメタンスルホニルオキシ基、ノナフルオロブタンスルホニルオキシ基等の(フルオロ)アルキルスルホニルオキシ基;ベンゼンスルホニルオキシ基、トルエンスルホニルオキシ基等の芳香族スルホニルオキシ基等が挙げられる。
Examples of the halogen atom include the same as described above, but a chlorine atom, a bromine atom and an iodine atom are preferable. Examples of the pseudohalogen group include a (fluoro) alkylsulfonyloxy group such as a methanesulfonyloxy group, a trifluoromethanesulfonyloxy group, and a nonafluorobutanesulfonyloxy group; and an aromatic sulfonyloxy group such as a benzenesulfonyloxy group and a toluenesulfonyloxy group. And the like.
1,4-フェニレンジアミンとハロゲン化又は擬ハロゲン化カルバゾール誘導体との仕込み比は、1,4-フェニレンジアミンの全NH基の物質量に対し、ハロゲン化又は擬ハロゲン化カルバゾール誘導体を当量以上とすることができるが、1~1.2当量程度が好適である。
The charge ratio of the 1,4-phenylenediamine to the halogenated or pseudohalogenated carbazole derivative is such that the halogenated or pseudohalogenated carbazole derivative is at least equivalent to the total amount of NH groups in 1,4-phenylenediamine. However, about 1 to 1.2 equivalents are preferred.
前記反応に用いられる触媒としては、例えば、塩化銅、臭化銅、ヨウ化銅等の銅触媒;テトラキス(トリフェニルホスフィン)パラジウム(Pd(PPh3)4)、ビス(トリフェニルホスフィン)ジクロロパラジウム(Pd(PPh3)2Cl2)、ビス(ジベンジリデンアセトン)パラジウム(Pd(dba)2)、トリス(ジベンジリデンアセトン)ジパラジウム(Pd2(dba)3)、ビス[トリ(t-ブチルホスフィン)]パラジウム(Pd(P-t-Bu3)2)、酢酸パラジウム(Pd(OAc)2)等のパラジウム触媒等が挙げられる。これらの触媒は、1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。
Examples of the catalyst used in the reaction include copper catalysts such as copper chloride, copper bromide, and copper iodide; tetrakis (triphenylphosphine) palladium (Pd (PPh 3 ) 4 ), bis (triphenylphosphine) dichloropalladium (Pd (PPh 3 ) 2 Cl 2 ), bis (dibenzylideneacetone) palladium (Pd (dba) 2 ), tris (dibenzylideneacetone) dipalladium (Pd 2 (dba) 3 ), bis [tri (t-butyl) Phosphine)] palladium catalysts such as palladium (Pd (Pt-Bu 3 ) 2 ) and palladium acetate (Pd (OAc) 2 ). These catalysts may be used alone or in combination of two or more.
また、これらの触媒は、公知の適切な配位子とともに使用してもよい。このような配位子としては、トリフェニルホスフィン、トリ-o-トリルホスフィン、ジフェニルメチルホスフィン、フェニルジメチルホスフィン、トリメチルホスフィン、トリエチルホスフィン、トリブチルホスフィン、トリ-t-ブチルホスフィン、ジ-t-ブチル(フェニル)ホスフィン、ジ-t-ブチル(4-ジメチルアミノフェニル)ホスフィン、1,2-ビス(ジフェニルホスフィノ)エタン、1,3-ビス(ジフェニルホスフィノ)」プロパン、1,4-ビス(ジフェニルホスフィノ)ブタン、1,1'-ビス(ジフェニルホスフィノ)フェロセン等の3級ホスフィン、トリメチルホスファイト、トリエチルホスファイト、トリフェニルホスファイト等の3級ホスファイト等が挙げられる。
These catalysts may be used together with a known suitable ligand. Such ligands include triphenylphosphine, tri-o-tolylphosphine, diphenylmethylphosphine, phenyldimethylphosphine, trimethylphosphine, triethylphosphine, tributylphosphine, tri-t-butylphosphine, di-t-butyl ( Phenyl) phosphine, di-t-butyl (4-dimethylaminophenyl) phosphine, 1,2-bis (diphenylphosphino) ethane, 1,3-bis (diphenylphosphino) propane, 1,4-bis (diphenyl) Examples include tertiary phosphines such as phosphino) butane and 1,1′-bis (diphenylphosphino) ferrocene, and tertiary phosphites such as trimethyl phosphite, triethyl phosphite and triphenyl phosphite.
触媒の使用量は、ハロゲン化又は擬ハロゲン化カルバゾール誘導体1molに対し、0.01~0.2mol程度とすることができるが、0.15mol程度が好適である。
また、配位子を用いる場合、その使用量は、使用する触媒に対し、0.1~5当量とすることができるが、1~2当量が好適である。 The amount of the catalyst used can be about 0.01 to 0.2 mol, preferably about 0.15 mol, per 1 mol of the halogenated or pseudohalogenated carbazole derivative.
When a ligand is used, the amount of the ligand used can be 0.1 to 5 equivalents to the catalyst to be used, but is preferably 1 to 2 equivalents.
また、配位子を用いる場合、その使用量は、使用する触媒に対し、0.1~5当量とすることができるが、1~2当量が好適である。 The amount of the catalyst used can be about 0.01 to 0.2 mol, preferably about 0.15 mol, per 1 mol of the halogenated or pseudohalogenated carbazole derivative.
When a ligand is used, the amount of the ligand used can be 0.1 to 5 equivalents to the catalyst to be used, but is preferably 1 to 2 equivalents.
原料化合物が全て固体である場合あるいは目的とするアニリン誘導体を効率よく得る観点から、前記各反応は溶媒中で行う。溶媒を使用する場合、その種類は、反応に悪影響を及ぼさないものであれば特に制限はない。具体例としては、脂肪族炭化水素類(ペンタン、n-ヘキサン、n-オクタン、n-デカン、デカリン等)、ハロゲン化脂肪族炭化水素類(クロロホルム、ジクロロメタン、ジクロロエタン、四塩化炭素等)、芳香族炭化水素類(ベンゼン、ニトロベンゼン、トルエン、o-キシレン、m-キシレン、p-キシレン、メシチレン等)、ハロゲン化芳香族炭化水素類(クロロベンゼン、ブロモベンゼン、o-ジクロロベンゼン、m-ジクロロベンゼン、p-ジクロロベンゼン等)、エーテル類(ジエチルエーテル、ジイソプロピルエーテル、t-ブチルメチルエーテル、テトラヒドロフラン、ジオキサン、1,2-ジメトキシエタン、1,2-ジエトキシエタン等)、ケトン類(アセトン、メチルエチルケトン、メチルイソブチルケトン、ジ-n-ブチルケトン、シクロヘキサノン等)、アミド類(N,N-ジメチルホルムアミド、N,N-ジメチルアセトアミド等)、ラクタム及びラクトン類(N-メチルピロリドン、γ-ブチロラクトン等)、尿素類(N,N-ジメチルイミダゾリジノン、テトラメチルウレア等)、スルホキシド類(ジメチルスルホキシド、スルホラン等)、ニトリル類(アセトニトリル、プロピオニトリル、ブチロニトリル等)等が挙げられるが、これらに限定されない。これらの溶媒は、1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。
場合 Each of the above-mentioned reactions is carried out in a solvent when all the starting compounds are solid or from the viewpoint of efficiently obtaining the desired aniline derivative. When a solvent is used, its type is not particularly limited as long as it does not adversely affect the reaction. Specific examples include aliphatic hydrocarbons (pentane, n-hexane, n-octane, n-decane, decalin, etc.), halogenated aliphatic hydrocarbons (chloroform, dichloromethane, dichloroethane, carbon tetrachloride, etc.), aromatics Aromatic hydrocarbons (benzene, nitrobenzene, toluene, o-xylene, m-xylene, p-xylene, mesitylene, etc.), halogenated aromatic hydrocarbons (chlorobenzene, bromobenzene, o-dichlorobenzene, m-dichlorobenzene, p-dichlorobenzene, etc.), ethers (diethyl ether, diisopropyl ether, t-butyl methyl ether, tetrahydrofuran, dioxane, 1,2-dimethoxyethane, 1,2-diethoxyethane, etc.), ketones (acetone, methyl ethyl ketone, Methyl isobutyl ketone, di-n Butyl ketone, cyclohexanone, etc.), amides (N, N-dimethylformamide, N, N-dimethylacetamide, etc.), lactams and lactones (N-methylpyrrolidone, γ-butyrolactone, etc.), ureas (N, N-dimethylimidazo) Examples include, but are not limited to, ridinone, tetramethylurea, etc., sulfoxides (dimethylsulfoxide, sulfolane, etc.), nitriles (acetonitrile, propionitrile, butyronitrile, etc.). These solvents may be used alone or in a combination of two or more.
反応温度は、用いる溶媒の融点から沸点までの範囲で適宜設定すればよいが、通常0~200℃程度の範囲であり、好ましくは20~150℃の範囲である。反応終了後は、常法にしたがって後処理をし、目的とするアニリン誘導体を得ることができる。
The reaction temperature may be appropriately set in the range from the melting point to the boiling point of the solvent to be used, but is usually in the range of about 0 to 200 ° C, preferably in the range of 20 to 150 ° C. After completion of the reaction, a post-treatment is carried out according to a conventional method to obtain a desired aniline derivative.
本発明の電荷輸送性組成物は、有機溶媒を含む。このような有機溶媒としては、電荷輸送性物質である式(1)で表されるアニリン誘導体を良好に溶解し得る高溶解性溶媒を用いることができる。高溶解性溶媒の具体例としては、例えば、シクロヘキサノン、N,N-ジメチルホルムアミド、N,N-ジメチルアセトアミド、N,N-ジメチルイソブチルアミド、N-メチルピロリドン、1,3-ジメチル-2-イミダゾリジノン、ジエチレングリコールモノメチルエーテル等の有機溶媒が挙げられるが、これらに限定されない。これらの溶媒は、1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。その使用量は、組成物に使用する溶媒全体に対し、5~100質量%とすることができる。
電荷 The charge transporting composition of the present invention contains an organic solvent. As such an organic solvent, a highly soluble solvent that can satisfactorily dissolve the aniline derivative represented by the formula (1), which is a charge transporting substance, can be used. Specific examples of the highly soluble solvent include, for example, cyclohexanone, N, N-dimethylformamide, N, N-dimethylacetamide, N, N-dimethylisobutyramide, N-methylpyrrolidone, 1,3-dimethyl-2-imidazo Examples include, but are not limited to, organic solvents such as lydinone and diethylene glycol monomethyl ether. These solvents may be used alone or in a combination of two or more. The amount used can be 5 to 100% by mass based on the whole solvent used in the composition.
また、組成物に、25℃で10~200mPa・s、特に35~150mPa・sの粘度を有し、常圧(大気圧)で沸点50~300℃、特に150~250℃の高粘度有機溶媒を少なくとも1種類含有させることで、組成物の粘度の調整が容易になり、その結果、平坦性の高い薄膜を再現性よく与える、用いる塗布方法に応じた組成物の調製が可能となる。高粘度有機溶媒としては、例えば、シクロヘキサノール、エチレングリコール、エチレングリコールジグリシジルエーテル、1,3-オクチレングリコール、ジエチレングリコール、ジプロピレングリコール、トリエチレングリコール、トリプロピレングリコール、1,3-ブタンジオール、2,3-ブタンジオール、1,4-ブタンジオール、プロピレングリコール、へキシレングリコール等が挙げられるが、これらに限定されない。これらの溶媒は、1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。組成物に用いられる溶媒全体に対する高粘度有機溶媒の添加割合は、固体が析出しない範囲内であることが好ましく、固体が析出しない限りにおいて、添加割合は、5~80質量%が好ましい。
Further, the composition has a viscosity of 10 to 200 mPa · s at 25 ° C., particularly 35 to 150 mPa · s, and a high viscosity organic solvent having a boiling point of 50 to 300 ° C., particularly 150 to 250 ° C. at normal pressure (atmospheric pressure). , The viscosity of the composition can be easily adjusted, and as a result, it is possible to prepare a composition that gives a highly planar thin film with good reproducibility and that is suitable for the application method used. Examples of the high-viscosity organic solvent include cyclohexanol, ethylene glycol, ethylene glycol diglycidyl ether, 1,3-octylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, tripropylene glycol, 1,3-butanediol, Examples include, but are not limited to, 2,3-butanediol, 1,4-butanediol, propylene glycol, hexylene glycol, and the like. These solvents may be used alone or in a combination of two or more. The addition ratio of the high-viscosity organic solvent to the entire solvent used in the composition is preferably within a range in which no solid precipitates, and as long as no solid precipitates, the addition ratio is preferably 5 to 80% by mass.
更に、基板に対する濡れ性の向上、溶媒の表面張力の調整、極性の調整、沸点の調整等の目的で、その他の溶媒を、組成物に使用する溶媒全体に対し、1~90質量%、好ましくは1~50質量%の割合で混合することもできる。このような溶媒としては、例えば、プロピレングリコールモノメチルエーテル、エチレングリコールモノブチルエーテル、ジエチレングリコールジエチルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールモノエチルエーテルアセテート、ジエチレングリコールモノブチルエーテルアセテート、ジプロピレングリコールモノメチルエーテル、プロピレングリコールモノメチルエーテルアセテート、ジエチレングリコールモノエチルエーテル、ジアセトンアルコール、γ-ブチロラクトン、エチルラクテート、n-ヘキシルアセテート等が挙げられるが、これらに限定されない。これらの溶媒は、1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。
Further, for the purpose of improving the wettability to the substrate, adjusting the surface tension of the solvent, adjusting the polarity, adjusting the boiling point, and the like, another solvent is used in an amount of 1 to 90% by mass, preferably 1 to 90% by mass based on the whole solvent used in the composition. Can be mixed at a ratio of 1 to 50% by mass. Examples of such a solvent include propylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol. Examples include, but are not limited to, monoethyl ether, diacetone alcohol, γ-butyrolactone, ethyl lactate, n-hexyl acetate, and the like. These solvents may be used alone or in a combination of two or more.
また、式(1)で表されるアニリン誘導体が、例えば、その分子内のカルバゾール部位の9位の窒素原子上にアリール基を有する場合のように、分子内の少なくとも1つの窒素原子上に置換基を有する場合、好ましくは全ての窒素原子上に置換基を有している場合、低極性溶媒のみを用いた組成物の調製が容易になる。そのような低極性溶媒の具体例としては、クロロホルム、クロロベンゼン等の塩素系溶媒;トルエン、キシレン、テトラリン、シクロヘキシルベンゼン、デシルベンゼン等の芳香族炭化水素系溶媒;1-オクタノール、1-ノナノール、1-デカノール等の脂肪族アルコール系溶媒;テトラヒドロフラン、ジオキサン、アニソール、4-メトキシトルエン、3-フェノキシトルエン、ジベンジルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールブチルメチルエーテル、トリエチレングリコールジメチルエーテル、トリエチレングリコールブチルメチルエーテル等のエーテル系溶媒;安息香酸メチル、安息香酸エチル、安息香酸ブチル、フタル酸ジメチル、マレイン酸ジエチル、安息香酸イソアミル、フタル酸ビス(2-エチルヘキシル)、マレイン酸ジブチル、シュウ酸ジブチル、酢酸ヘキシル、ジエチレングリコールモノエチルエーテルアセテート、ジエチレングリコールモノブチルエーテルアセテート等のエステル系溶媒等が挙げられるが、これらに限定されない。これらの溶媒は、1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。
Further, when the aniline derivative represented by the formula (1) has an aryl group on the nitrogen atom at the 9-position of the carbazole moiety in the molecule, the aniline derivative is substituted on at least one nitrogen atom in the molecule. In the case of having a group, preferably in the case of having a substituent on all nitrogen atoms, preparation of a composition using only a low-polarity solvent is facilitated. Specific examples of such low-polarity solvents include chlorinated solvents such as chloroform and chlorobenzene; aromatic hydrocarbon-based solvents such as toluene, xylene, tetralin, cyclohexylbenzene, and decylbenzene; 1-octanol, 1-nonanol, -Aliphatic alcohol solvents such as decanol; tetrahydrofuran, dioxane, anisole, 4-methoxytoluene, 3-phenoxytoluene, dibenzyl ether, diethylene glycol dimethyl ether, diethylene glycol butyl methyl ether, triethylene glycol dimethyl ether, triethylene glycol butyl methyl ether, etc. Ether solvents: methyl benzoate, ethyl benzoate, butyl benzoate, dimethyl phthalate, diethyl maleate, isoamyl benzoate, bis (2 -Ethylhexyl), dibutyl maleate, dibutyl oxalate, hexyl acetate, ester solvents such as diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, and the like, but are not limited thereto. These solvents may be used alone or in a combination of two or more.
本発明の電荷輸送性組成物は、溶媒として水も含み得るが、組成物から得られる電荷輸送性薄膜を有機EL素子の正孔注入層として用いた場合に高耐久性の素子を再現性よく得る観点から、水の含有量は、溶媒全体の10質量%以下が好ましく、5質量%以下がより好ましく、溶媒として有機溶媒のみを用いることが最適である。なお、この場合における「有機溶媒のみ」とは、溶媒として用いるものが有機溶媒だけであることを意味し、使用する有機溶媒や固形分等に微量に含まれる「水」の存在までをも否定するものではない。また、本発明において、固形分とは、電荷輸送性組成物に含まれる溶媒以外の成分を意味する。
The charge transporting composition of the present invention may contain water as a solvent, but when the charge transporting thin film obtained from the composition is used as a hole injection layer of an organic EL device, a highly durable device can be reproducibly prepared. From the viewpoint of obtaining, the content of water is preferably 10% by mass or less, more preferably 5% by mass or less of the whole solvent, and it is optimal to use only an organic solvent as the solvent. In this case, "only organic solvent" means that only the organic solvent is used as the solvent, and denies the existence of "water" contained in a trace amount in the organic solvent or solid content used. It does not do. In the present invention, the solid content means components other than the solvent contained in the charge transporting composition.
本発明の電荷輸送性組成物は、式(1)で表されるアニリン誘導体からなる電荷輸送性物質とともに、その他の電荷輸送性物質を含んでいてもよい。
電荷 The charge transporting composition of the present invention may contain other charge transporting substances in addition to the charge transporting substance comprising the aniline derivative represented by the formula (1).
本発明の電荷輸送性組成物は、式(1)で表されるアニリン誘導体からなる電荷輸送性物質と、有機溶媒とを含むものであるが、得られる薄膜の用途に応じ、その電荷輸送能の向上等を目的としてドーパント(電荷受容性物質)を含んでいてもよい。
The charge transporting composition of the present invention contains a charge transporting substance composed of the aniline derivative represented by the formula (1) and an organic solvent. The charge transporting ability is improved depending on the use of the obtained thin film. It may contain a dopant (charge-accepting substance) for the purpose.
ドーパントとしては、組成物に使用する少なくとも1種の溶媒に溶解するものであれば特に限定されず、無機系のドーパント、有機系のドーパントのいずれも使用できる。また、無機系及び有機系のドーパントは、1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。更に、ドーパントは、組成物から固体膜である電荷輸送性薄膜を得る過程で、例えば、焼成時の加熱といった外部からの刺激によって、分子内の一部が外れることによってドーパントとしての機能が初めて発現又は向上するようになる物質、例えば、スルホン酸基が脱離しやすい基で保護されたアリールスルホン酸エステル化合物であってもよい。
The dopant is not particularly limited as long as it is soluble in at least one kind of solvent used in the composition, and either an inorganic dopant or an organic dopant can be used. Further, the inorganic and organic dopants may be used alone or in combination of two or more. Further, during the process of obtaining a charge-transporting thin film as a solid film from the composition, for example, the function as a dopant is expressed for the first time because a part of the molecule comes off due to an external stimulus such as heating during baking. Alternatively, a substance capable of improving, for example, an arylsulfonic acid ester compound in which a sulfonic acid group is protected with a group which is easily eliminated may be used.
組成物中のドーパント物質の量は、所望の電荷輸送性の程度やドーパント物質の種類に応じて異なるため一概に規定できないが、通常、式(1)で表されるアニリン誘導体1に対し、質量比で、0.0001~100の範囲である。
The amount of the dopant substance in the composition cannot be specified unconditionally because it differs depending on the desired degree of charge transporting property and the kind of the dopant substance, but usually, the amount of the dopant substance is based on the mass of the aniline derivative 1 represented by the formula (1). The ratio is in the range of 0.0001 to 100.
本発明においては、好ましい無機系のドーパントとしては、ヘテロポリ酸が挙げられる。ヘテロポリ酸とは、代表的に下記式(H1)で表されるKeggin型あるいは下記式(H2)で表されるDawson型の化学構造で示される、ヘテロ原子が分子の中心に位置する構造を有し、バナジウム(V)、モリブデン(Mo)、タングステン(W)等の酸素酸であるイソポリ酸と、異種元素の酸素酸とが縮合してなるポリ酸である。このような異種元素の酸素酸としては、主にケイ素(Si)、リン(P)、ヒ素(As)の酸素酸が挙げられる。
In the present invention, heteropolyacid is preferred as the inorganic dopant. The heteropolyacid typically has a structure in which a hetero atom is located at the center of a molecule, represented by a Keggin-type chemical structure represented by the following formula (H1) or a Dawson-type chemical structure represented by the following formula (H2). Further, it is a polyacid obtained by condensing isopolyacid which is an oxygen acid such as vanadium (V), molybdenum (Mo), and tungsten (W) with oxygen acid of a different element. Examples of such different types of oxyacids include oxyacids of silicon (Si), phosphorus (P), and arsenic (As).
ヘテロポリ酸の具体例としては、リンモリブデン酸、ケイモリブデン酸、リンタングステン酸、ケイタングステン酸、リンタングストモリブデン酸等が挙げられる。これらのヘテロポリ酸は、1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。なお、これらのヘテロポリ酸は、市販品として入手可能であり、また、公知の方法により合成することもできる。
具体 Specific examples of the heteropolyacid include phosphomolybdic acid, silicomolybdic acid, phosphotungstic acid, silicotungstic acid, and phosphorus tungstomolybdic acid. These heteropoly acids may be used alone or in combination of two or more. These heteropoly acids are available as commercial products, and can also be synthesized by known methods.
特に、1種類のヘテロポリ酸を用いる場合、その1種類のヘテロポリ酸は、リンタングステン酸又はリンモリブデン酸が好ましく、リンタングステン酸が最適である。また、2種類以上のヘテロポリ酸を用いる場合、その2種類以上のヘテロポリ酸の1つは、リンタングステン酸又はリンモリブデン酸が好ましく、リンタングステン酸がより好ましい。
Especially, when one kind of heteropolyacid is used, the one kind of heteropolyacid is preferably phosphotungstic acid or phosphomolybdic acid, and most preferably phosphotungstic acid. When two or more heteropoly acids are used, one of the two or more heteropoly acids is preferably phosphotungstic acid or phosphomolybdic acid, more preferably phosphotungstic acid.
なお、ヘテロポリ酸は、元素分析等の定量分析において、一般式で示される構造から元素の数が多いもの、又は少ないものであっても、それが市販品として入手したもの、あるいは、公知の合成方法にしたがって適切に合成したものである限り、本発明において用いることができる。すなわち、例えば、一般的には、リンタングステン酸は化学式H3(PW12O40)・nH2Oで、リンモリブデン酸は化学式H3(PMo12O40)・nH2Oでそれぞれ示されるが、定量分析において、この式中のP(リン)、O(酸素)又はW(タングステン)若しくはMo(モリブデン)の数が多いもの又は少ないものであっても、それが市販品として入手したもの、あるいは公知の合成方法にしたがって適切に合成したものである限り、本発明において用いることができる。この場合、本発明に規定されるヘテロポリ酸の質量とは、合成物や市販品中における純粋なリンタングステン酸の質量(リンタングステン酸含量)ではなく、市販品として入手可能な形態及び公知の合成法にて単離可能な形態において、水和水やその他の不純物等を含んだ状態での全質量を意味する。
In addition, the heteropolyacid, in a quantitative analysis such as elemental analysis, the number of elements is large or small from the structure represented by the general formula, even if it is obtained as a commercial product, or a known synthetic As long as it is appropriately synthesized according to the method, it can be used in the present invention. That is, for example, phosphotungstic acid is generally represented by the chemical formula H 3 (PW 12 O 40 ) · nH 2 O, and phosphomolybdic acid is generally represented by the chemical formula H 3 (PMo 12 O 40 ) · nH 2 O. In quantitative analysis, even if the number of P (phosphorus), O (oxygen) or W (tungsten) or Mo (molybdenum) in this formula is large or small, it is obtained as a commercial product; Alternatively, it can be used in the present invention as long as it is appropriately synthesized according to a known synthesis method. In this case, the mass of the heteropolyacid specified in the present invention is not the mass of pure phosphotungstic acid (phosphotungstic acid content) in a synthetic product or a commercial product, but a commercially available product and a known synthetic polytungstic acid. In the form that can be isolated by the method, it means the total mass in the state containing water of hydration and other impurities.
ドーパントとしてヘテロポリ酸を使用する場合、その使用量は、式(1)で表されるアニリン誘導体1に対し、質量比で、0.001~50.0程度とすることができるが、好ましくは0.01~20.0程度、より好ましくは0.1~10.0程度である。
When a heteropolyacid is used as a dopant, the amount of the heteropolyacid can be about 0.001 to 50.0 in terms of a mass ratio with respect to the aniline derivative 1 represented by the formula (1). It is about 0.01 to 20.0, more preferably about 0.1 to 10.0.
一方、好ましい有機系のドーパントとしては、テトラシアノキノジメタン誘導体やベンゾキノン誘導体が挙げられる。テトラシアノキノジメタン誘導体の具体例としては、7,7,8,8-テトラシアノキノジメタン(TCNQ)や、下記式(H3)で表されるハロテトラシアノキノジメタン等が挙げられる。また、ベンゾキノン誘導体の具体例としては、テトラフルオロ-1,4-ベンゾキノン(F4BQ)、テトラクロロ-1,4-ベンゾキノン(クロラニル)、テトラブロモ-1,4-ベンゾキノン、2,3-ジクロロ-5,6-ジシアノ-1,4-ベンゾキノン(DDQ)等が挙げられる。
On the other hand, preferable organic dopants include a tetracyanoquinodimethane derivative and a benzoquinone derivative. Specific examples of the tetracyanoquinodimethane derivative include 7,7,8,8-tetracyanoquinodimethane (TCNQ) and halotetracyanoquinodimethane represented by the following formula (H3). Specific examples of the benzoquinone derivative include tetrafluoro-1,4-benzoquinone (F4BQ), tetrachloro-1,4-benzoquinone (chloranil), tetrabromo-1,4-benzoquinone, 2,3-dichloro-5, 6-dicyano-1,4-benzoquinone (DDQ) and the like.
式(H3)中、R101~R104は、互いに独立に、水素原子又はハロゲン原子を表すが、少なくとも1つはハロゲン原子であり、少なくとも2つがハロゲン原子であることが好ましく、少なくとも3つがハロゲン原子であることがより好ましく、全てがハロゲン原子であることが最も好ましい。ハロゲン原子としては前記と同じものが挙げられるが、フッ素原子又は塩素原子が好ましく、フッ素原子がより好ましい。
In the formula (H3), R 101 to R 104 independently represent a hydrogen atom or a halogen atom, but at least one is a halogen atom, preferably at least two are halogen atoms, and at least three are halogen atoms. More preferably, all are halogen atoms. Examples of the halogen atom include the same as described above, but a fluorine atom or a chlorine atom is preferable, and a fluorine atom is more preferable.
このようなハロテトラシアノキノジメタンの具体例としては、2-フルオロ-7,7,8,8-テトラシアノキノジメタン、2-クロロ-7,7,8,8-テトラシアノキノジメタン、2,5-ジフルオロ-7,7,8,8-テトラシアノキノジメタン、2,5-ジクロロ-7,7,8,8-テトラシアノキノジメタン、2,3,5,6-テトラクロロ-7,7,8,8-テトラシアノキノジメタン、2,3,5,6-テトラフルオロ-7,7,8,8-テトラシアノキノジメタン(F4TCNQ)等が挙げられる。
Specific examples of such halotetracyanoquinodimethane include 2-fluoro-7,7,8,8-tetracyanoquinodimethane, 2-chloro-7,7,8,8-tetracyanoquinodimethane 2,5-difluoro-7,7,8,8-tetracyanoquinodimethane, 2,5-dichloro-7,7,8,8-tetracyanoquinodimethane, 2,3,5,6-tetra Chloro-7,7,8,8-tetracyanoquinodimethane, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) and the like.
ドーパントとしてテトラシアノキノジメタン誘導体又はベンゾキノン誘導体を使用する場合、その使用量は、式(1)で表されるアニリン誘導体1に対し、物質量(モル)比で、0.01~20.0程度とすることができるが、好ましくは0.1~10.0程度、より好ましくは0.5~5.0程度である。
When a tetracyanoquinodimethane derivative or a benzoquinone derivative is used as a dopant, the amount thereof is 0.01 to 20.0 in terms of the amount (mol) of the aniline derivative 1 represented by the formula (1). Although it can be about 0.1 to 10.0, it is preferably about 0.1 to 10.0, and more preferably about 0.5 to 5.0.
また、その他の好ましい有機系のドーパントとしては、アリールスルホン酸化合物が挙げられる。その具体例としては、ベンゼンスルホン酸、トシル酸、p-スチレンスルホン酸、2-ナフタレンスルホン酸、4-ヒドロキシベンゼンスルホン酸、5-スルホサリチル酸、p-ドデシルベンゼンスルホン酸、ジヘキシルベンゼンスルホン酸、2,5-ジヘキシルベンゼンスルホン酸、ジブチルナフタレンスルホン酸、6,7-ジブチル-2-ナフタレンスルホン酸、ドデシルナフタレンスルホン酸、3-ドデシル-2-ナフタレンスルホン酸、ヘキシルナフタレンスルホン酸、4-ヘキシル-1-ナフタレンスルホン酸、オクチルナフタレンスルホン酸、2-オクチル-1-ナフタレンスルホン酸、ヘキシルナフタレンスルホン酸、7-へキシル-1-ナフタレンスルホン酸、6-ヘキシル-2-ナフタレンスルホン酸、ジノニルナフタレンスルホン酸、2,7-ジノニル-4-ナフタレンスルホン酸、ジノニルナフタレンジスルホン酸、2,7-ジノニル-4,5-ナフタレンジスルホン酸、国際公開第2005/000832号記載の1,4-ベンゾジオキサンジスルホン酸化合物、国際公開第2006/025342号記載のアリールスルホン酸化合物、国際公開第2009/096352号記載のアリールスルホン酸化合物等が挙げられる。
Other preferred organic dopants include aryl sulfonic acid compounds. Specific examples thereof include benzenesulfonic acid, tosylic acid, p-styrenesulfonic acid, 2-naphthalenesulfonic acid, 4-hydroxybenzenesulfonic acid, 5-sulfosalicylic acid, p-dodecylbenzenesulfonic acid, dihexylbenzenesulfonic acid, and 5,5-dihexylbenzenesulfonic acid, dibutylnaphthalenesulfonic acid, 6,7-dibutyl-2-naphthalenesulfonic acid, dodecylnaphthalenesulfonic acid, 3-dodecyl-2-naphthalenesulfonic acid, hexylnaphthalenesulfonic acid, 4-hexyl-1 -Naphthalenesulfonic acid, octylnaphthalenesulfonic acid, 2-octyl-1-naphthalenesulfonic acid, hexylnaphthalenesulfonic acid, 7-hexyl-1-naphthalenesulfonic acid, 6-hexyl-2-naphthalenesulfonic acid, dinonylnaphthalene Rufonic acid, 2,7-dinonyl-4-naphthalenesulfonic acid, dinonylnaphthalenedisulfonic acid, 2,7-dinonyl-4,5-naphthalenedisulfonic acid, 1,4-benzodioxane described in WO 2005/000832 Disulfonic acid compounds, aryl sulfonic acid compounds described in WO 2006/025342, and aryl sulfonic acid compounds described in WO 2009/096352.
更に具体的には、下記式(H4)又は(H5)で表されるアリールスルホン酸化合物が挙がられる。
More specifically, an arylsulfonic acid compound represented by the following formula (H4) or (H5) can be mentioned.
式(H4)中、A1は、O又はSを表すが、Oが好ましい。A2は、ナフタレン又はアントラセンに由来する(q+1)価の基(すなわち、ナフタレン又はアントラセンから(q+1)個の水素原子を取り除いて得られる基)であるが、ナフタレンに由来するものが好ましい。A3は、パーフルオロビフェニルから誘導されるp価の基(すなわち、パーフルオロビフェニルからp個のフッ素原子を取り除いて得られる基)である。pは、A1とA3との結合数を表し、2≦p≦4を満たす整数であるが、2が好ましい。このとき、A3は、パーフルオロビフェニルジイル基であるが、好ましくはパーフルオロビフェニル-4,4'-ジイル基である。qは、A2に結合するスルホン酸基数を表し、1≦q≦4を満たす整数であるが、2が最適である。
In the formula (H4), A 1 represents O or S, and O is preferable. A 2 is a (q + 1) -valent group derived from naphthalene or anthracene (that is, a group obtained by removing (q + 1) hydrogen atoms from naphthalene or anthracene), and a group derived from naphthalene is preferable. A 3 is a p-valent group derived from perfluorobiphenyl (that is, a group obtained by removing p fluorine atoms from perfluorobiphenyl). p represents the number of bonds between A 1 and A 3 and is an integer satisfying 2 ≦ p ≦ 4, preferably 2. At this time, A 3 is a perfluorobiphenyldiyl group, preferably a perfluorobiphenyl-4,4′-diyl group. q represents the number of sulfonic acid groups bonded to A 2 and is an integer satisfying 1 ≦ q ≦ 4, and 2 is most preferable.
式(H5)中、A4~A8は、互いに独立に、水素原子、ハロゲン原子、シアノ基、炭素数1~20のアルキル基、炭素数1~20のハロゲン化アルキル基又は炭素数2~20のハロゲン化アルケニル基であるが、A4~A8のうち少なくとも3つは、ハロゲン原子である。
In the formula (H5), A 4 to A 8 each independently represent a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 20 carbon atoms, a halogenated alkyl group having 1 to 20 carbon atoms or a group having 2 to 2 carbon atoms. Among the 20 alkenyl halide groups, at least three of A 4 to A 8 are halogen atoms.
炭素数1~20のハロゲン化アルキル基としては、トリフルオロメチル、2,2,2-トリフルオロエチル、1,1,2,2,2-ペンタフルオロエチル、3,3,3-トリフルオロプロピル、2,2,3,3,3-ペンタフルオロプロピル、1,1,2,2,3,3,3-ヘプタフルオロプロピル、4,4,4-トリフルオロブチル、3,3,4,4,4-ペンタフルオロブチル、2,2,3,3,4,4,4-ヘプタフルオロブチル、1,1,2,2,3,3,4,4,4-ノナフルオロブチル基等が挙げられる。炭素数2~20のハロゲン化アルケニル基としては、パーフルオロビニル基、パーフルオロ-1-プロペニル基、パーフルオロ-2-プロペニル基、パーフルオロブテニル基等が挙げられる。その他、ハロゲン原子、炭素数1~20のアルキル基の例としては前記と同様のものが挙げられるが、ハロゲン原子としては、フッ素原子が好ましい。
Examples of the halogenated alkyl group having 1 to 20 carbon atoms include trifluoromethyl, 2,2,2-trifluoroethyl, 1,1,2,2,2-pentafluoroethyl, 3,3,3-trifluoropropyl 2,2,3,3,3-pentafluoropropyl, 1,1,2,2,3,3,3-heptafluoropropyl, 4,4,4-trifluorobutyl, 3,3,4,4 , 4-pentafluorobutyl, 2,2,3,3,4,4,4-heptafluorobutyl, 1,1,2,2,3,3,4,4,4-nonafluorobutyl and the like Can be Examples of the halogenated alkenyl group having 2 to 20 carbon atoms include a perfluorovinyl group, a perfluoro-1-propenyl group, a perfluoro-2-propenyl group, a perfluorobutenyl group, and the like. In addition, examples of the halogen atom and the alkyl group having 1 to 20 carbon atoms include the same as described above, and the halogen atom is preferably a fluorine atom.
これらの中でも、A4~A8としては、水素原子、ハロゲン原子、シアノ基、炭素数1~10のアルキル基、炭素数1~10のハロゲン化アルキル基又は炭素数2~10のハロゲン化アルケニル基であり、かつA4~A8のうち少なくとも3つはフッ素原子であることが好ましく、水素原子、フッ素原子、シアノ基、炭素数1~5のアルキル基、炭素数1~5のフッ化アルキル基、又は炭素数2~5のフッ化アルケニル基であり、かつ、A4~A8のうち少なくとも3つはフッ素原子であることがより好ましく、水素原子、フッ素原子、シアノ基、炭素数1~5のパーフルオロアルキル基、又は炭素数1~5のパーフルオロアルケニル基であり、かつ、A4、A5及びA8がフッ素原子であることがより一層好ましい。なお、パーフルオロアルキル基とは、アルキル基の水素原子全てがフッ素原子に置換された基であり、パーフルオロアルケニル基とは、アルケニル基の水素原子全てがフッ素原子に置換された基である。
Among them, A 4 to A 8 include a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 10 carbon atoms, a halogenated alkyl group having 1 to 10 carbon atoms, and a halogenated alkenyl having 2 to 10 carbon atoms. And at least three of A 4 to A 8 are preferably a fluorine atom, such as a hydrogen atom, a fluorine atom, a cyano group, an alkyl group having 1 to 5 carbon atoms, and a fluorine atom having 1 to 5 carbon atoms. It is an alkyl group or an alkenyl fluoride group having 2 to 5 carbon atoms, and at least three of A 4 to A 8 are more preferably a fluorine atom, and a hydrogen atom, a fluorine atom, a cyano group, a carbon atom More preferably, it is a perfluoroalkyl group having 1 to 5 or a perfluoroalkenyl group having 1 to 5 carbon atoms, and A 4 , A 5 and A 8 are fluorine atoms. Note that a perfluoroalkyl group is a group in which all hydrogen atoms of an alkyl group are substituted with fluorine atoms, and a perfluoroalkenyl group is a group in which all hydrogen atoms of an alkenyl group are substituted with fluorine atoms.
式(H5)中、rは、ナフタレン環に結合するスルホン酸基数を表し、1≦r≦4を満たす整数であるが、2~4が好ましく、2が最適である。
RIn the formula (H5), r represents the number of sulfonic acid groups bonded to the naphthalene ring, and is an integer satisfying 1 ≦ r ≦ 4, preferably 2 to 4, and most preferably 2.
以下、好適なアリールスルホン酸化合物の具体例を挙げるが、これらに限定されない。
Hereinafter, specific examples of preferred arylsulfonic acid compounds will be described, but the invention is not limited thereto.
ドーパントとしてアリールスルホン酸化合物を使用する場合、その使用量は、式(1)で表されるアニリン誘導体1に対し、物質量(モル)比で、好ましくは0.01~20.0程度、より好ましくは0.4~5.0程度である。アリールスルホン酸化合物は市販品を用いてもよいが、国際公開第2006/025342号、国際公開第2009/096352号等に記載の公知の方法で合成することもできる。
When an aryl sulfonic acid compound is used as a dopant, the amount of the aryl sulfonic acid compound is preferably about 0.01 to 20.0 in terms of a substance amount (mole) ratio to the aniline derivative 1 represented by the formula (1). It is preferably about 0.4 to 5.0. The arylsulfonic acid compound may be a commercially available product, but can also be synthesized by a known method described in International Publication No. WO 2006/025342, International Publication No. 2009/096352, and the like.
また、その他の好ましい有機系のドーパントとしては、アリールスルホン酸エステル化合物が挙げられる。その具体例としては、国際公開第2017/217455号に開示されたアリールスルホン酸エステル化合物、国際公開第2017/217457号に開示されたアリールスルホン酸エステル化合物等が挙げられる。
Other preferred organic dopants include arylsulfonic acid ester compounds. Specific examples thereof include an arylsulfonic acid ester compound disclosed in International Publication No. 2017/217455 and an arylsulfonic acid ester compound disclosed in International Publication No. 2017/217457.
更に具体的には、アリールスルホン酸エステル化合物としては下記式(H6)~(H8)のいずれかで表されるものが好ましい。
More specifically, as the arylsulfonic acid ester compound, a compound represented by any of the following formulas (H6) to (H8) is preferable.
式(H6)~(H8)中、mは、1≦m≦4を満たす整数であるが、2が好ましい。nは、1≦n≦4を満たす整数であるが、2が好ましい。
中 In the formulas (H6) to (H8), m is an integer satisfying 1 ≦ m ≦ 4, preferably 2. n is an integer satisfying 1 ≦ n ≦ 4, preferably 2.
式(H6)中、A11は、パーフルオロビフェニルから誘導されるm価の基である。A12は、-O-又は-S-であるが、-O-が好ましい。A13は、ナフタレン又はアントラセンから誘導される(n+1)価の基であるが、ナフタレンから誘導されるものが好ましい。
In the formula (H6), A 11 is an m-valent group derived from perfluorobiphenyl. A 12 is —O— or —S—, preferably —O—. A 13 is a (n + 1) -valent group derived from naphthalene or anthracene, and is preferably a group derived from naphthalene.
Rs1~Rs4は、互いに独立に、水素原子、又は直鎖状若しくは分岐状の炭素数1~6のアルキル基であり、Rs5は、置換されていてもよい炭素数2~20の1価炭化水素基である。前記直鎖状又は分岐状の炭素数1~6のアルキル基としては、メチル基、エチル基、n-プロピル基、イソプロピル基、n-ブチル基、イソブチル基、s-ブチル基、t-ブチル基、n-ヘキシル基等が挙げられる。これらのうち、炭素数1~3のアルキル基が好ましい。前記炭素数2~20の1価炭化水素基は、直鎖状、分岐状、環状のいずれでもよく、その具体例としては、エチル基、n-プロピル基、イソプロピル基、n-ブチル基、イソブチル基、t-ブチル基等のアルキル基;フェニル、ナフチル、フェナントリル基等のアリール基等が挙げられる。
R s1 to R s4 each independently represent a hydrogen atom or a linear or branched alkyl group having 1 to 6 carbon atoms, and R s5 represents an optionally substituted 2 to 20 carbon atoms. Is a multivalent hydrocarbon group. Examples of the linear or branched alkyl group having 1 to 6 carbon atoms include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, an s-butyl group and a t-butyl group. , N-hexyl group and the like. Among these, an alkyl group having 1 to 3 carbon atoms is preferable. The monovalent hydrocarbon group having 2 to 20 carbon atoms may be linear, branched, or cyclic, and specific examples thereof include an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, and an isobutyl group. And an alkyl group such as a t-butyl group; and an aryl group such as a phenyl, naphthyl and phenanthryl group.
特に、Rs1~Rs4のうち、Rs1又はRs3が炭素数1~3の直鎖アルキル基であり、残りが水素原子であるか、Rs1が炭素数1~3の直鎖アルキル基であり、Rs2~Rs4が水素原子であることが好ましい。この場合、炭素数1~3の直鎖アルキル基としては、メチル基が好ましい。また、Rs5としては、炭素数2~4の直鎖アルキル基又はフェニル基が好ましい。
In particular, among R s1 to R s4 , R s1 or R s3 is a straight-chain alkyl group having 1 to 3 carbon atoms, and the remainder is a hydrogen atom, or R s1 is a straight-chain alkyl group having 1 to 3 carbon atoms. And it is preferred that R s2 to R s4 are hydrogen atoms. In this case, the straight-chain alkyl group having 1 to 3 carbon atoms is preferably a methyl group. Further, as R s5 , a linear alkyl group having 2 to 4 carbon atoms or a phenyl group is preferable.
式(H7)中、A14は、置換されていてもよい、1つ以上の芳香環を含む炭素数6~20のm価の炭化水素基であり、この炭化水素基は、1つ以上の芳香環を含む炭素数6~20の炭化水素化合物からm個の水素原子を取り除いて得られる基である。このような炭化水素化合物としては、ベンゼン、トルエン、キシレン、エチルベンゼン、ビフェニル、ナフタレン、アントラセン、フェナントレン等が挙げられる。なお、前記炭化水素基は、その水素原子の一部又は全部が、更に置換基で置換されていてもよく、このような置換基としては、フッ素原子、塩素原子、臭素原子、ヨウ素原子、ニトロ基、シアノ基、ヒドロキシ基、アミノ基、シラノール基、チオール基、カルボキシ基、スルホン酸エステル基、リン酸基、リン酸エステル基、エステル基、チオエステル基、アミド基、1価炭化水素基、オルガノオキシ基、オルガノアミノ基、オルガノシリル基、オルガノチオ基、アシル基、スルホ基等が挙げられる。これらの中でも、A14としては、ベンゼン、ビフェニル等から誘導される基が好ましい。
In the formula (H7), A 14 is an optionally substituted m-valent hydrocarbon group having 6 to 20 carbon atoms and containing one or more aromatic rings, wherein the hydrocarbon group is one or more A group obtained by removing m hydrogen atoms from a hydrocarbon compound having 6 to 20 carbon atoms including an aromatic ring. Examples of such a hydrocarbon compound include benzene, toluene, xylene, ethylbenzene, biphenyl, naphthalene, anthracene, and phenanthrene. In the hydrocarbon group, part or all of the hydrogen atoms may be further substituted with a substituent. Examples of such a substituent include a fluorine atom, a chlorine atom, a bromine atom, an iodine atom, and a nitro atom. Group, cyano group, hydroxy group, amino group, silanol group, thiol group, carboxy group, sulfonic acid ester group, phosphoric acid group, phosphoric acid ester group, ester group, thioester group, amide group, monovalent hydrocarbon group, organo Examples include an oxy group, an organoamino group, an organosilyl group, an organothio group, an acyl group, and a sulfo group. Among them, A 14 is preferably a group derived from benzene, biphenyl and the like.
式(H7)中、A15は、-O-又は-S-であるが、-O-が好ましい。
In the formula (H7), A 15 is —O— or —S—, preferably —O—.
式(H7)中、A16は、炭素数6~20の(n+1)価の芳香族炭化水素基であり、この芳香族炭化水素基は、炭素数6~20の芳香族炭化水素化合物の芳香環上から(n+1)個の水素原子を取り除いて得られる基である。このような芳香族炭化水素化合物としては、ベンゼン、トルエン、キシレン、ビフェニル、ナフタレン、アントラセン、ピレン等が挙げられる。中でも、A16としては、ナフタレン又はアントラセンから誘導される基が好ましく、ナフタレンから誘導される基がより好ましい。
In the formula (H7), A 16 is a (n + 1) -valent aromatic hydrocarbon group having 6 to 20 carbon atoms, and the aromatic hydrocarbon group is an aromatic hydrocarbon compound having 6 to 20 carbon atoms. It is a group obtained by removing (n + 1) hydrogen atoms from the ring. Examples of such aromatic hydrocarbon compounds include benzene, toluene, xylene, biphenyl, naphthalene, anthracene, and pyrene. Among them, A 16 is preferably a group derived from naphthalene or anthracene, and more preferably a group derived from naphthalene.
式(H7)中、Rs6及びRs7は、互いに独立に、水素原子、又は直鎖状もしくは分岐状の1価脂肪族炭化水素基であり、Rs8は、直鎖状又は分岐状の1価脂肪族炭化水素基である。ただし、Rs6、Rs7及びRs8の炭素数の合計は6以上である。Rs6、Rs7及びRs8の炭素数の合計の上限は、特に限定されないが、20以下が好ましく、10以下がより好ましい。前記直鎖状又は分岐状の1価脂肪族炭化水素基の具体例としては、メチル基、エチル基、n-プロピル基、イソプロピル基、n-ブチル基、イソブチル基、s-ブチル基、t-ブチル基、n-ヘキシル基、n-オクチル基、2-エチルヘキシル基、デシル基等の炭素数1~20のアルキル基;ビニル基、1-プロペニル基、2-プロペニル基、イソプロペニル基、1-メチル-2-プロペニル基、1-ブテニル基、2-ブテニル基、3-ブテニル基、ヘキセニル基等の炭素数2~20のアルケニル基等が挙げられる。これらの中でも、Rs6は水素原子が好ましく、Rs7及びRs8は、互いに独立に、炭素数1~6のアルキル基が好ましい。
In the formula (H7), R s6 and R s7 are each independently a hydrogen atom or a linear or branched monovalent aliphatic hydrocarbon group, and R s8 is a linear or branched monovalent aliphatic hydrocarbon group. It is a valent aliphatic hydrocarbon group. However, the total number of carbon atoms of R s6 , R s7 and R s8 is 6 or more. The upper limit of the total number of carbon atoms of R s6 , R s7 and R s8 is not particularly limited, but is preferably 20 or less, and more preferably 10 or less. Specific examples of the linear or branched monovalent aliphatic hydrocarbon group include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, s-butyl, t- C1-C20 alkyl groups such as butyl group, n-hexyl group, n-octyl group, 2-ethylhexyl group and decyl group; vinyl group, 1-propenyl group, 2-propenyl group, isopropenyl group, 1- Examples thereof include an alkenyl group having 2 to 20 carbon atoms such as a methyl-2-propenyl group, a 1-butenyl group, a 2-butenyl group, a 3-butenyl group, and a hexenyl group. Among them, R s6 is preferably a hydrogen atom, and R s7 and R s8 are each independently preferably an alkyl group having 1 to 6 carbon atoms.
式(H8)中、Rs9~Rs13は、互いに独立に、水素原子、ニトロ基、シアノ基、ハロゲン原子、炭素数1~10のアルキル基、炭素数1~10のハロゲン化アルキル基、又は炭素数2~10のハロゲン化アルケニル基である。
In the formula (H8), R s9 to R s13 each independently represent a hydrogen atom, a nitro group, a cyano group, a halogen atom, an alkyl group having 1 to 10 carbon atoms, a halogenated alkyl group having 1 to 10 carbon atoms, or It is a halogenated alkenyl group having 2 to 10 carbon atoms.
前記炭素数1~10のアルキル基は、直鎖状、分岐状、環状のいずれでもよく、その具体例としては、メチル基、エチル基、n-プロピル基、イソプロピル基、n-ブチル基、イソブチル基、s-ブチル基、t-ブチル基、n-ペンチル基、シクロペンチル基、n-ヘキシル基、シクロヘキシル基、n-ヘプチル基、n-オクチル基、n-ノニル基、n-デシル基等が挙げられる。
The alkyl group having 1 to 10 carbon atoms may be linear, branched or cyclic, and specific examples thereof include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group and an isobutyl group. Group, s-butyl group, t-butyl group, n-pentyl group, cyclopentyl group, n-hexyl group, cyclohexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group and the like. Can be
前記炭素数1~10のハロゲン化アルキル基は、前記炭素数1~10のアルキル基の水素原子の一部又は全部がハロゲン原子で置換された基であれば、特に限定されない。その具体例としては、トリフルオロメチル基、2,2,2-トリフルオロエチル基、1,1,2,2,2-ペンタフルオロエチル基、3,3,3-トリフルオロプロピル基、2,2,3,3,3-ペンタフルオロプロピル基、1,1,2,2,3,3,3-ヘプタフルオロプロピル基、4,4,4-トリフルオロブチル基、3,3,4,4,4-ペンタフルオロブチル基、2,2,3,3,4,4,4-ヘプタフルオロブチル基、1,1,2,2,3,3,4,4,4-ノナフルオロブチル基等が挙げられる。
The halogenated alkyl group having 1 to 10 carbon atoms is not particularly limited as long as part or all of the hydrogen atoms of the alkyl group having 1 to 10 carbon atoms are substituted with halogen atoms. Specific examples thereof include a trifluoromethyl group, a 2,2,2-trifluoroethyl group, a 1,1,2,2,2-pentafluoroethyl group, a 3,3,3-trifluoropropyl group, 2,3,3,3-pentafluoropropyl group, 1,1,2,2,3,3,3-heptafluoropropyl group, 4,4,4-trifluorobutyl group, 3,3,4,4 , 4-pentafluorobutyl group, 2,2,3,3,4,4,4-heptafluorobutyl group, 1,1,2,2,3,3,4,4,4-nonafluorobutyl group, etc. Is mentioned.
前記炭素数2~10のハロゲン化アルケニル基は、前記炭素数2~10のアルケニル基の水素原子の一部又は全部がハロゲン原子で置換された基であれば、特に限定されない。その具体例としては、パーフルオロビニル基、パーフルオロ-1-プロペニル基、パーフルオロ-2-プロペニル基、パーフルオロ-1-ブテニル基、パーフルオロ-2-ブテニル基、パーフルオロ-3-ブテニル基等が挙げられる。
The halogenated alkenyl group having 2 to 10 carbon atoms is not particularly limited as long as part or all of the hydrogen atoms of the alkenyl group having 2 to 10 carbon atoms are substituted with halogen atoms. Specific examples thereof include a perfluorovinyl group, a perfluoro-1-propenyl group, a perfluoro-2-propenyl group, a perfluoro-1-butenyl group, a perfluoro-2-butenyl group, and a perfluoro-3-butenyl group. And the like.
これらの中でも、Rs9としては、ニトロ基、シアノ基、炭素数1~10のハロゲン化アルキル基、炭素数2~10のハロゲン化アルケニル基が好ましく、ニトロ基、シアノ基、炭素数1~4のハロゲン化アルキル基、炭素数2~4のハロゲン化アルケニル基がより好ましく、ニトロ基、シアノ基、トリフルオロメチル基、パーフルオロプロペニル基がより一層好ましい。
Among them, as R s9 , a nitro group, a cyano group, a halogenated alkyl group having 1 to 10 carbon atoms and an alkenyl halide group having 2 to 10 carbon atoms are preferable, and a nitro group, a cyano group, and a carbon atom having 1 to 4 carbon atoms are preferable. Are more preferable, and a nitro group, a cyano group, a trifluoromethyl group and a perfluoropropenyl group are more preferable.
式(H8)中、Rs10~Rs13としては、ハロゲン原子が好ましく、フッ素原子がより好ましい。
In the formula (H8), R s10 to R s13 are preferably a halogen atom, more preferably a fluorine atom.
式(H8)中、A17は、-O-、-S-又は-NH-であるが、-O-が好ましい。
In the formula (H8), A 17 is —O—, —S— or —NH—, preferably —O—.
式(H8)中、A18は、炭素数6~20の(n+1)価の芳香族炭化水素基であり、この芳香族炭化水素基は、炭素数6~20の芳香族炭化水素化合物の芳香環上から(n+1)個の水素原子を取り除いて得られる基である。このような芳香族炭化水素化合物としては、ベンゼン、トルエン、キシレン、ビフェニル、ナフタレン、アントラセン、ピレン等が挙げられる。これらの中でも、A18としては、ナフタレン又はアントラセンから誘導される基が好ましく、ナフタレンから誘導される基がより好ましい。
In the formula (H8), A 18 is an (n + 1) -valent aromatic hydrocarbon group having 6 to 20 carbon atoms, and this aromatic hydrocarbon group is an aromatic hydrocarbon compound having 6 to 20 carbon atoms. It is a group obtained by removing (n + 1) hydrogen atoms from the ring. Examples of such aromatic hydrocarbon compounds include benzene, toluene, xylene, biphenyl, naphthalene, anthracene, and pyrene. Among these, A 18 is preferably a group derived from naphthalene or anthracene, and more preferably a group derived from naphthalene.
式(H8)中、Rs14~Rs17は、互いに独立に、水素原子、又は直鎖状若しくは分岐状の炭素数1~20の1価脂肪族炭化水素基である。1価脂肪族炭化水素基の具体例としては、メチル基、エチル基、n-プロピル基、イソプロピル基、n-ブチル基、イソブチル基、s-ブチル基、t-ブチル基、n-ペンチル基、シクロペンチル基、n-ヘキシル基、シクロヘキシル基、n-ヘプチル基、n-オクチル基、n-ノニル基、n-デシル基、n-ウンデシル基、n-ドデシル基等の炭素数1~20のアルキル基;ビニル基、1-プロペニル基、2-プロペニル基、イソプロペニル基、1-メチル-2-プロペニル基、1-ブテニル基、2-ブテニル基、3-ブテニル基、ヘキセニル基等の炭素数2~20のアルケニル基等が挙げられる。これらのうち、炭素数1~20のアルキル基が好ましく、炭素数1~10のアルキル基がより好ましく、炭素数1~8のアルキル基がより一層好ましい。
In the formula (H8), R s14 to R s17 each independently represent a hydrogen atom or a linear or branched monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms. Specific examples of the monovalent aliphatic hydrocarbon group include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, s-butyl, t-butyl, n-pentyl, C1-C20 alkyl groups such as cyclopentyl group, n-hexyl group, cyclohexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group, n-undecyl group and n-dodecyl group A group having 2 to 2 carbon atoms such as a vinyl group, a 1-propenyl group, a 2-propenyl group, an isopropenyl group, a 1-methyl-2-propenyl group, a 1-butenyl group, a 2-butenyl group, a 3-butenyl group and a hexenyl group; And 20 alkenyl groups. Among these, an alkyl group having 1 to 20 carbon atoms is preferable, an alkyl group having 1 to 10 carbon atoms is more preferable, and an alkyl group having 1 to 8 carbon atoms is still more preferable.
式(H8)中、Rs18は、直鎖状若しくは分岐状の炭素数1~20の1価脂肪族炭化水素基、又はORs19である。Rs19は、置換されていてもよい炭素数2~20の1価炭化水素基である。Rs18で表される直鎖状又は分岐状の炭素数1~20の1価脂肪族炭化水素基としては、前記と同様のものが挙げられる。Rs18が1価脂肪族炭化水素基である場合、Rs18は、炭素数1~20のアルキル基が好ましく、炭素数1~10のアルキル基がより好ましく、炭素数1~8のアルキル基がより一層好ましい。Rs19で表される炭素数2~20の1価炭化水素基としては、前述した1価脂肪族炭化水素基のうちメチル基以外のもののほか、フェニル基、ナフチル基、フェナントリル基等のアリール基等が挙げられる。これらの中でも、Rs19としては、炭素数2~4の直鎖アルキル基又はフェニル基が好ましい。なお、前記1価炭化水素基が有していてもよい置換基としては、フッ素原子、炭素数1~4のアルコキシ基、ニトロ基、シアノ基等が挙げられる。
In the formula (H8), R s18 is a linear or branched monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms or OR s19 . R s19 is an optionally substituted monovalent hydrocarbon group having 2 to 20 carbon atoms. Examples of the linear or branched monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms represented by R s18 include the same as described above. When R s18 is a monovalent aliphatic hydrocarbon group, R s18 is preferably an alkyl group having 1 to 20 carbon atoms, more preferably an alkyl group having 1 to 10 carbon atoms, and an alkyl group having 1 to 8 carbon atoms. Even more preferred. Examples of the monovalent hydrocarbon group having 2 to 20 carbon atoms represented by R s19 include the above-mentioned monovalent aliphatic hydrocarbon groups other than methyl group, and aryl groups such as phenyl group, naphthyl group and phenanthryl group. And the like. Among them, R s19 is preferably a straight-chain alkyl group having 2 to 4 carbon atoms or a phenyl group. Examples of the substituent which the monovalent hydrocarbon group may have include a fluorine atom, an alkoxy group having 1 to 4 carbon atoms, a nitro group and a cyano group.
好適なアリールスルホン酸エステル化合物の具体例としては、以下に示すものが挙げられるが、これらに限定されない。
Specific examples of suitable arylsulfonic acid ester compounds include, but are not limited to, the following.
ドーパントとしてアリールスルホン酸エステル化合物を使用する場合、その使用量は、物質量(モル)比で、式(1)で表されるアニリン誘導体1に対し、0.01~20.0程度とすることができるが、好ましくは0.1~10.0程度、より好ましくは0.5~5.0程度である。
When an arylsulfonic acid ester compound is used as a dopant, the amount of the arylsulfonic acid ester compound to be used is about 0.01 to 20.0 based on the aniline derivative 1 represented by the formula (1) in a substance amount (molar) ratio. However, it is preferably about 0.1 to 10.0, more preferably about 0.5 to 5.0.
ドーパントとして有機系のドーパントを用いる場合、その分子量は、特に限定されないが、式(1)で表されるアニリン誘導体とともに用いた場合に、有機溶媒への良好な溶解性を確保し、均一性の高い組成物を再現性よく得る観点から、好ましくは5,000以下、より好ましくは3,000以下、より一層好ましくは2,000以下である。特に、ドーパントとして用いるアリールスルホン酸化合物の分子量は、同様の観点から、好ましくは2,000以下、より好ましくは1,500以下である。
When an organic dopant is used as the dopant, its molecular weight is not particularly limited, but when used together with the aniline derivative represented by the formula (1), good solubility in an organic solvent is ensured, and uniformity is ensured. From the viewpoint of obtaining a high composition with good reproducibility, it is preferably 5,000 or less, more preferably 3,000 or less, and even more preferably 2,000 or less. In particular, the molecular weight of the arylsulfonic acid compound used as the dopant is preferably 2,000 or less, more preferably 1,500 or less from the same viewpoint.
本発明においては、高電荷輸送性の薄膜を再現性よく得ること、ドーパントの入手容易性等を考慮すると、ドーパントとして、アリールスルホン酸化合物、アリールスルホン酸エステル化合物、ハロテトラシアノキノジメタン及びベンゾキノン誘導体の少なくとも1種を用いることが好ましく、より透明な電荷輸送性薄膜を再現性よく得ることを更に考慮すると、アリールスルホン酸化合物及びアリールスルホン酸エステル化合物の少なくとも1種を用いることがより好ましく、安定性に優れる電荷輸送性組成物を得ることを更に考慮すると、アリールスルホン酸エステル化合物を用いることがより一層好ましい
In the present invention, considering that a thin film with high charge transportability can be obtained with good reproducibility, availability of dopants, etc., as the dopant, arylsulfonic acid compounds, arylsulfonic acid ester compounds, halotetracyanoquinodimethane and benzoquinone It is preferable to use at least one derivative, and in view of obtaining a more transparent charge-transporting thin film with good reproducibility, it is more preferable to use at least one of arylsulfonic acid compounds and arylsulfonic acid ester compounds, When further considering obtaining a charge transporting composition having excellent stability, it is more preferable to use an arylsulfonic acid ester compound.
前記電荷輸送性物質及びドーパントは、前記溶媒に完全に溶解しているか、均一に分散している状態となっていることが好ましく、完全に溶解していることが最適である。
電荷 The charge transporting substance and the dopant are preferably completely dissolved or uniformly dispersed in the solvent, and most preferably completely dissolved.
本発明の電荷輸送性組成物は、得られる薄膜を有機EL素子の正孔注入層として用いる場合における正孔輸送層への注入性の向上、素子の寿命特性等の改善を目的として、有機シラン化合物やノニオン系含フッ素界面活性剤を含んでいてもよく、その含有量は、電荷輸送性物質及びドーパントの合計100質量部に対し、通常、1~30質量部程度である。
The charge transporting composition of the present invention is used for improving the injection property into the hole transporting layer when the obtained thin film is used as a hole injecting layer of an organic EL device, and improving the life characteristics of the device. It may contain a compound or a nonionic fluorinated surfactant, and its content is usually about 1 to 30 parts by mass based on 100 parts by mass of the total of the charge transporting substance and the dopant.
本発明の電荷輸送性組成物中の固形分濃度は、電荷輸送性物質の析出を抑制しつつ十分な膜厚を確保する観点から、通常0.1~20質量%程度、好ましくは0.5~15質量%である。
The concentration of the solid content in the charge transporting composition of the present invention is generally about 0.1 to 20% by mass, preferably 0.5, from the viewpoint of securing a sufficient film thickness while suppressing the deposition of the charge transporting substance. 1515% by mass.
本発明の電荷輸送性組成物の粘度は、通常、25℃で1~50mPa・sであり、表面張力は、通常、25℃で20~50mN/mである。本発明の電荷輸送性組成物の粘度と表面張力は、用いる塗布方法、所望の膜厚等の各種要素を考慮して、用いる有機溶媒の種類やそれらの比率、固形分濃度等を変更することで調整可能である。
The viscosity of the charge transporting composition of the present invention is usually 1 to 50 mPa · s at 25 ° C., and the surface tension is usually 20 to 50 mN / m at 25 ° C. The viscosity and surface tension of the charge transporting composition of the present invention are determined by changing the type of the organic solvent used, their ratio, the solid content, and the like, in consideration of various factors such as a coating method to be used and a desired film thickness. Can be adjusted.
本発明の電荷輸送性組成物は、式(1)で表されるアニリン誘導体を有機溶媒に溶解させることで製造できる。あらかじめ有機溶媒に前記アニリン誘導体を溶解させ、そこにその他の有機溶媒を順次加えてもよく、用いる全溶媒の混合溶媒をあらかじめ調製し、そこへ前記アニリン誘導体を溶解させてもよい。また、必要があれば、組成物に含まれる成分が分解したり変質したりしないように注意し、加熱して前記アニリン誘導体等の溶解を促進してもよい。本発明の電荷輸送性組成物が前記アニリン誘導体と溶媒以外の成分を含む場合も、同様の方法に従う。更に、本発明の電荷輸送性組成物は、より平坦性の高い薄膜を再現性よく得る観点から、電荷輸送性物質を有機溶媒に溶解させた後、サブマイクロメートルオーダーのフィルター等を用いてろ過してもよい。
電荷 The charge transporting composition of the present invention can be produced by dissolving the aniline derivative represented by the formula (1) in an organic solvent. The aniline derivative may be dissolved in an organic solvent in advance, and the other organic solvent may be sequentially added thereto. Alternatively, a mixed solvent of all the solvents to be used may be prepared in advance, and the aniline derivative may be dissolved therein. If necessary, the components contained in the composition may be heated so as to accelerate the dissolution of the aniline derivative and the like, while taking care not to decompose or deteriorate the components. The same method is followed when the charge transporting composition of the present invention contains components other than the aniline derivative and the solvent. Furthermore, the charge transporting composition of the present invention is obtained by dissolving the charge transporting substance in an organic solvent from the viewpoint of obtaining a thinner film having higher flatness with good reproducibility, and then filtering using a submicrometer-order filter or the like. May be.
[電荷輸送性薄膜]
本発明の電荷輸送性組成物を基材上に塗布して焼成することで、基材上に電荷輸送性薄膜を形成することができる。 [Charge transporting thin film]
By applying the charge transporting composition of the present invention on a substrate and baking it, a charge transporting thin film can be formed on the substrate.
本発明の電荷輸送性組成物を基材上に塗布して焼成することで、基材上に電荷輸送性薄膜を形成することができる。 [Charge transporting thin film]
By applying the charge transporting composition of the present invention on a substrate and baking it, a charge transporting thin film can be formed on the substrate.
組成物の塗布方法としては、特に限定されず、ディップ法、スピンコート法、転写印刷法、ロールコート法、インクジェット法、スプレー法、スリットコート法等が挙げられる。塗布方法に応じて、組成物の粘度及び表面張力を調節することが好ましい。
塗布 The method of applying the composition is not particularly limited, and examples thereof include a dipping method, a spin coating method, a transfer printing method, a roll coating method, an ink jet method, a spray method, and a slit coating method. It is preferable to adjust the viscosity and surface tension of the composition according to the application method.
焼成雰囲気も特に限定されず、大気雰囲気(空気下)だけでなく、窒素等の不活性ガス下や真空中でも均一な成膜面及び電荷輸送性を有する薄膜を得ることができるが、通常、大気雰囲気で焼成する。
The firing atmosphere is not particularly limited, and a uniform thin film surface and a thin film having a charge transporting property can be obtained not only in an air atmosphere (under air) but also in an inert gas such as nitrogen or in a vacuum. Bake in an atmosphere.
また、焼成条件も特に限定されないが、例えば、ホットプレートを用いて加熱焼成する。通常、所望の電荷輸送性等も考慮して、焼成温度は100~260℃の範囲内で、焼成時間は1分間~1時間の範囲内で適宜決定する。更に、必要に応じて、異なる2以上の温度で多段階の焼成をしてもよい。
焼 成 Also, firing conditions are not particularly limited. For example, heating and firing are performed using a hot plate. In general, the firing temperature is appropriately determined within the range of 100 to 260 ° C., and the firing time is appropriately determined within the range of 1 minute to 1 hour in consideration of the desired charge transporting property. Further, if necessary, multi-stage firing may be performed at two or more different temperatures.
電荷輸送性薄膜の膜厚は、特に限定されないが、有機EL素子の機能層として用いる場合、5~300nmが好ましい。膜厚を変化させる方法としては、例えば、電荷輸送性組成物中の固形分濃度を変化させたり、塗布時の液量を変化させたりする方法がある。
The thickness of the charge transporting thin film is not particularly limited, but is preferably 5 to 300 nm when used as a functional layer of an organic EL device. As a method of changing the film thickness, for example, there is a method of changing a solid concentration in the charge transporting composition or a method of changing a liquid amount at the time of application.
[有機EL素子]
本発明の有機EL素子は、一対の電極を有し、これら電極の間に、機能層として本発明の電荷輸送性薄膜を有するものである。 [Organic EL device]
The organic EL device of the present invention has a pair of electrodes, and has the charge transporting thin film of the present invention as a functional layer between these electrodes.
本発明の有機EL素子は、一対の電極を有し、これら電極の間に、機能層として本発明の電荷輸送性薄膜を有するものである。 [Organic EL device]
The organic EL device of the present invention has a pair of electrodes, and has the charge transporting thin film of the present invention as a functional layer between these electrodes.
有機EL素子の代表的な構成としては、以下の(a)~(f)が挙げられるが、これらに限定されない。なお、下記構成において、必要に応じて、発光層と陽極の間に電子ブロック層等を、発光層と陰極の間にホール(正孔)ブロック層等を設けることもできる。また、正孔注入層、正孔輸送層又は正孔注入輸送層が電子ブロック層等としての機能を兼ね備えていてもよく、電子注入層、電子輸送層あるいは電子注入輸送層がホール(正孔)ブロック層等としての機能を兼ね備えていてもよい。更に、必要に応じて各層の間に任意の機能層を設けることも可能である。
(a)陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/電子注入層/陰極
(b)陽極/正孔注入層/正孔輸送層/発光層/電子注入輸送層/陰極
(c)陽極/正孔注入輸送層/発光層/電子輸送層/電子注入層/陰極
(d)陽極/正孔注入輸送層/発光層/電子注入輸送層/陰極
(e)陽極/正孔注入層/正孔輸送層/発光層/陰極
(f)陽極/正孔注入輸送層/発光層/陰極 Representative configurations of the organic EL device include the following (a) to (f), but are not limited thereto. In the following configuration, an electron block layer or the like may be provided between the light emitting layer and the anode, and a hole (hole) block layer or the like may be provided between the light emitting layer and the cathode as necessary. Further, the hole injection layer, the hole transport layer, or the hole injection / transport layer may also have a function as an electron blocking layer or the like, and the electron injection layer, the electron transport layer, or the electron injection / transport layer may be a hole (hole). It may have a function as a block layer or the like. Further, an optional functional layer can be provided between the layers as needed.
(A) anode / hole injection layer / hole transport layer / emission layer / electron transport layer / electron injection layer / cathode (b) anode / hole injection layer / hole transport layer / emission layer / electron injection transport layer / Cathode (c) anode / hole injection / transport layer / emission layer / electron transport layer / electron injection layer / cathode (d) anode / hole injection / transport layer / emission layer / electron injection / transport layer / cathode (e) anode / positive Hole injection layer / hole transport layer / emission layer / cathode (f) anode / hole injection / transport layer / emission layer / cathode
(a)陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/電子注入層/陰極
(b)陽極/正孔注入層/正孔輸送層/発光層/電子注入輸送層/陰極
(c)陽極/正孔注入輸送層/発光層/電子輸送層/電子注入層/陰極
(d)陽極/正孔注入輸送層/発光層/電子注入輸送層/陰極
(e)陽極/正孔注入層/正孔輸送層/発光層/陰極
(f)陽極/正孔注入輸送層/発光層/陰極 Representative configurations of the organic EL device include the following (a) to (f), but are not limited thereto. In the following configuration, an electron block layer or the like may be provided between the light emitting layer and the anode, and a hole (hole) block layer or the like may be provided between the light emitting layer and the cathode as necessary. Further, the hole injection layer, the hole transport layer, or the hole injection / transport layer may also have a function as an electron blocking layer or the like, and the electron injection layer, the electron transport layer, or the electron injection / transport layer may be a hole (hole). It may have a function as a block layer or the like. Further, an optional functional layer can be provided between the layers as needed.
(A) anode / hole injection layer / hole transport layer / emission layer / electron transport layer / electron injection layer / cathode (b) anode / hole injection layer / hole transport layer / emission layer / electron injection transport layer / Cathode (c) anode / hole injection / transport layer / emission layer / electron transport layer / electron injection layer / cathode (d) anode / hole injection / transport layer / emission layer / electron injection / transport layer / cathode (e) anode / positive Hole injection layer / hole transport layer / emission layer / cathode (f) anode / hole injection / transport layer / emission layer / cathode
「正孔注入層」、「正孔輸送層」及び「正孔注入輸送層」とは、発光層と陽極との間に形成される層であって、正孔を陽極から発光層へ輸送する機能を有するものである。発光層と陽極の間に、正孔輸送性材料の層が1層のみ設けられる場合、それが「正孔注入輸送層」であり、発光層と陽極の間に、正孔輸送性材料の層が2層以上設けられる場合、陽極に近い層が「正孔注入層」であり、それ以外の層が「正孔輸送層」である。特に、正孔注入(輸送)層は、陽極からの正孔受容性だけでなく、正孔輸送(発光)層への正孔注入性にも優れる薄膜が用いられる。
“Hole injection layer”, “hole transport layer” and “hole injection transport layer” are layers formed between the light emitting layer and the anode, and transport holes from the anode to the light emitting layer. It has a function. When only one layer of the hole transporting material is provided between the light emitting layer and the anode, it is a “hole injection / transport layer”, and the layer of the hole transporting material is provided between the light emitting layer and the anode. Is provided, two or more layers are a "hole injection layer" and a layer near the anode is a "hole transport layer". In particular, as the hole injection (transport) layer, a thin film that is excellent in not only the property of accepting holes from the anode but also the property of injecting holes into the hole transport (emission) layer is used.
「電子注入層」、「電子輸送層」及び「電子注入輸送層」とは、発光層と陰極との間に形成される層であって、電子を陰極から発光層へ輸送する機能を有するものである。発光層と陰極の間に、電子輸送性材料の層が1層のみ設けられる場合、それが「電子注入輸送層」であり、発光層と陰極の間に、電子輸送性材料の層が2層以上設けられる場合、陰極に近い層が「電子注入層」であり、それ以外の層が「電子輸送層」である。
"Electron injection layer", "electron transport layer" and "electron injection transport layer" are layers formed between the light emitting layer and the cathode, and have a function of transporting electrons from the cathode to the light emitting layer. It is. When only one layer of the electron transporting material is provided between the light emitting layer and the cathode, it is an “electron injection and transport layer”, and two layers of the electron transporting material are provided between the light emitting layer and the cathode. When provided as described above, the layer close to the cathode is an “electron injection layer”, and the other layers are “electron transport layers”.
「発光層」とは、発光機能を有する有機層であって、ドーピングシステムを採用する場合、ホスト材料とドーパント材料とを含んでいる。このとき、ホスト材料は、主に電子と正孔の再結合を促し、励起子を発光層内に閉じ込める機能を有し、ドーパント材料は、再結合で得られた励起子を効率的に発光させる機能を有する。燐光素子の場合、ホスト材料は主にドーパントで生成された励起子を発光層内に閉じ込める機能を有する。
The “light-emitting layer” is an organic layer having a light-emitting function, and includes a host material and a dopant material when a doping system is employed. At this time, the host material mainly has a function of promoting recombination of electrons and holes and confining excitons in the light-emitting layer, and the dopant material efficiently emits excitons obtained by the recombination. Has functions. In the case of a phosphorescent element, a host material has a function of mainly confining excitons generated by a dopant in a light-emitting layer.
本発明の電荷輸送性薄膜は、有機EL素子において、陽極と発光層の間に設けられる機能層として好適であり、正孔注入層、正孔輸送層、正孔注入輸送層としてより好適であり、正孔注入層としてより一層好適である。
The charge transporting thin film of the present invention is suitable as a functional layer provided between an anode and a light emitting layer in an organic EL device, and is more suitable as a hole injection layer, a hole transport layer, and a hole injection transport layer. It is even more suitable as a hole injection layer.
本発明の電荷輸送性組成物を用いて有機EL素子を作製する場合の使用材料や、作製方法としては、下記のようなものが挙げられるが、これらに限定されない。
材料 Materials and methods for producing an organic EL device using the charge transporting composition of the present invention include, but are not limited to, the following.
本発明の電荷輸送性組成物から得られる薄膜をからなる正孔輸送層を有するOLED素子の作製方法の一例は、以下のとおりである。なお、電極は、電極に悪影響を与えない範囲で、アルコール、純水等による洗浄や、UVオゾン処理、酸素-プラズマ処理等による表面処理を予め行うことが好ましい。
の 一 An example of a method for producing an OLED device having a hole transport layer comprising a thin film obtained from the charge transport composition of the present invention is as follows. Note that the electrode is preferably subjected to cleaning with alcohol, pure water, or the like, or surface treatment such as UV ozone treatment or oxygen-plasma treatment in advance within a range that does not adversely affect the electrode.
陽極基板上に、前記の方法により、本発明の電荷輸送性薄膜からなる正孔注入層を形成する。これを真空蒸着装置内に導入し、正孔輸送層、発光層、電子輸送層、電子輸送層/ホールブロック層、陰極金属を順次蒸着する。あるいは、当該方法において蒸着で正孔輸送層と発光層とを形成するかわりに、正孔輸送性高分子を含む正孔輸送層形成用組成物と発光性高分子を含む発光層形成用組成物を用いてウェットプロセスによってこれらの層を形成する。なお、必要に応じて、発光層と正孔輸送層との間に電子ブロック層を設けてよい。
(4) On the anode substrate, a hole injection layer composed of the charge transporting thin film of the present invention is formed by the method described above. This is introduced into a vacuum evaporation apparatus, and a hole transport layer, a light emitting layer, an electron transport layer, an electron transport layer / hole block layer, and a cathode metal are sequentially deposited. Alternatively, instead of forming the hole transporting layer and the light emitting layer by vapor deposition in the method, a composition for forming a hole transporting layer containing a hole transporting polymer and a composition for forming a light emitting layer containing a light emitting polymer Are used to form these layers by a wet process. Note that, if necessary, an electron block layer may be provided between the light emitting layer and the hole transport layer.
陽極材料としては、インジウム錫酸化物(ITO)、インジウム亜鉛酸化物(IZO)に代表される透明電極や、アルミニウムに代表される金属やこれらの合金等から構成される金属陽極が挙げられ、平坦化処理を行ったものが好ましい。高電荷輸送性を有するポリチオフェン誘導体やポリアニリン誘導体を用いることもできる。なお、金属陽極を構成するその他の金属としては、金、銀、銅、インジウムやこれらの合金等が挙げられるが、これらに限定されない。
Examples of the anode material include a transparent electrode typified by indium tin oxide (ITO) and indium zinc oxide (IZO), and a metal anode composed of a metal typified by aluminum, an alloy thereof, and the like. It is preferable that the material has been subjected to a chemical treatment. A polythiophene derivative or a polyaniline derivative having a high charge transporting property can also be used. The other metal constituting the metal anode includes, but is not limited to, gold, silver, copper, indium and alloys thereof.
発光層を形成する材料としては、トリス(8-キノリノラート)アルミニウム(III)(Alq3)、ビス(8-キノリノラート)亜鉛(II)等の8-ヒドロキシキノリンのアルミニウム錯体、亜鉛錯体等の金属錯体、10-ヒドロキシベンゾ[h]キノリンの金属錯体、ビススチリルベンゼン誘導体、ビススチリルアリーレン誘導体、(2-ヒドロキシフェニル)ベンゾチアゾールの金属錯体、シロール誘導体等の低分子発光材料;ポリ(p-フェニレンビニレン)、ポリ[2-メトキシ-5-(2-エチルヘキシルオキシ)-1,4-フェニレンビニレン]、ポリ(3-アルキルチオフェン)、ポリビニルカルバゾール等の高分子化合物に発光材料と電子移動材料を混合した系等が挙げられるが、これらに限定されない。また、蒸着で発光層を形成する場合、発光性ドーパントと共蒸着してもよく、発光性ドーパントとしては、トリス(2-フェニルピリジン)イリジウム(III)(Ir(PPy)3)等の金属錯体や、ルブレン等のナフタセン誘導体、キナクリドン誘導体、ペリレン等の縮合多環芳香族環等が挙げられるが、これらに限定されない。
Examples of the material for forming the light emitting layer include aluminum complexes of 8-hydroxyquinoline such as tris (8-quinolinolato) aluminum (III) (Alq 3 ) and bis (8-quinolinolato) zinc (II), and metal complexes such as zinc complex. Low molecular light emitting materials such as metal complexes of 10,10-hydroxybenzo [h] quinoline, bisstyrylbenzene derivatives, bisstyrylarylene derivatives, metal complexes of (2-hydroxyphenyl) benzothiazole, and silole derivatives; poly (p-phenylenevinylene) ), Poly [2-methoxy-5- (2-ethylhexyloxy) -1,4-phenylenevinylene], poly (3-alkylthiophene), polyvinylcarbazole, and other high molecular compounds mixed with a light emitting material and an electron transfer material And the like, but are not limited thereto. When the light emitting layer is formed by vapor deposition, the light emitting layer may be co-deposited with a light emitting dopant. The light emitting dopant may be a metal complex such as tris (2-phenylpyridine) iridium (III) (Ir (PPy) 3 ). And naphthacene derivatives such as rubrene, quinacridone derivatives, condensed polycyclic aromatic rings such as perylene, and the like, but are not limited thereto.
電子輸送層/ホールブロック層を形成する材料としては、オキシジアゾール誘導体、トリアゾール誘導体、フェナントロリン誘導体、フェニルキノキサリン誘導体、ベンズイミダゾール誘導体、ピリミジン誘導体等が挙げられるが、これらに限定されない。
材料 Materials for forming the electron transport layer / hole block layer include, but are not limited to, oxydiazole derivatives, triazole derivatives, phenanthroline derivatives, phenylquinoxaline derivatives, benzimidazole derivatives, and pyrimidine derivatives.
電子注入層を形成する材料としては、酸化リチウム(Li2O)、酸化マグネシウム(MgO)、アルミナ(Al2O3)等の金属酸化物、フッ化リチウム(LiF)、フッ化ナトリウム(NaF)の金属フッ化物が挙げられるが、これらに限定されない
Materials for forming the electron injection layer include metal oxides such as lithium oxide (Li 2 O), magnesium oxide (MgO), and alumina (Al 2 O 3 ), lithium fluoride (LiF), and sodium fluoride (NaF). But not limited to metal fluorides
陰極材料としては、アルミニウム、マグネシウム-銀合金、アルミニウム-リチウム合金等が挙げられるが、これらに限定されない。
Examples of the cathode material include, but are not limited to, aluminum, magnesium-silver alloy, aluminum-lithium alloy and the like.
電子ブロック層を形成する材料としては、トリス(フェニルピラゾール)イリジウム等が挙げられるが、これに限定されない。
材料 A material for forming the electron blocking layer includes, but is not limited to, tris (phenylpyrazole) iridium and the like.
正孔輸送性高分子としては、ポリ[(9,9-ジヘキシルフルオレニル-2,7-ジイル)-co-(N,N'-ビス{p-ブチルフェニル}-1,4-ジアミノフェニレン)]、ポリ[(9,9-ジオクチルフルオレニル-2,7-ジイル)-co-(N,N'-ビス{p-ブチルフェニル}-1,1'-ビフェニレン-4,4-ジアミン)]、ポリ[(9,9-ビス{1'-ペンテン-5'-イル}フルオレニル-2,7-ジイル)-co-(N,N'-ビス{p-ブチルフェニル}-1,4-ジアミノフェニレン)]、ポリ[N,N'-ビス(4-ブチルフェニル)-N,N'-ビス(フェニル)-ベンジジン]-エンドキャップド ウィズポリシルセスキオキサン、ポリ[(9,9-ジジオクチルフルオレニル-2,7-ジイル)-co-(4,4'-(N-(p-ブチルフェニル))ジフェニルアミン)]等が挙げられる。
As the hole transporting polymer, poly [(9,9-dihexylfluorenyl-2,7-diyl) -co- (N, N'-bis {p-butylphenyl} -1,4-diaminophenylene] )], Poly [(9,9-dioctylfluorenyl-2,7-diyl) -co- (N, N′-bis {p-butylphenyl} -1,1′-biphenylene-4,4-diamine )], Poly [(9,9-bis {1′-penten-5′-yl} fluorenyl-2,7-diyl) -co- (N, N′-bis {p-butylphenyl} -1,4 -Diaminophenylene)], poly [N, N'-bis (4-butylphenyl) -N, N'-bis (phenyl) -benzidine] -end-capped {with polysilsesquioxane, poly [(9,9 -Didioctylfluorenyl-2,7-diyl) -co- (4,4 '-(N- (p-butylphenyl)) diphenylamine)].
発光性高分子としては、ポリ(9,9-ジアルキルフルオレン)(PDAF)等のポリフルオレン誘導体、ポリ(2-メトキシ-5-(2'-エチルヘキソキシ)-1,4-フェニレンビニレン)(MEH-PPV)等のポリフェニレンビニレン誘導体、ポリ(3-アルキルチオフェン)(PAT)等のポリチオフェン誘導体、ポリビニルカルバゾール(PVCz)等が挙げられる。
Examples of the luminescent polymer include polyfluorene derivatives such as poly (9,9-dialkylfluorene) (PDAF), poly (2-methoxy-5- (2′-ethylhexoxy) -1,4-phenylenevinylene) (MEH- Polyphenylene vinylene derivatives such as PPV); polythiophene derivatives such as poly (3-alkylthiophene) (PAT); and polyvinyl carbazole (PVCz).
陽極と陰極及びこれらの間に形成される層を構成する材料は、ボトムエミッション構造、トップエミッション構造のいずれを備える素子を製造するかで異なるため、その点を考慮して、適宜材料選択する。
(4) The materials constituting the anode, the cathode, and the layers formed between them differ depending on whether an element having a bottom emission structure or a top emission structure is manufactured. Therefore, the material is appropriately selected in consideration of this point.
通常、ボトムエミッション構造の素子では、基板側に透明陽極が用いられ、基板側から光が取り出されるのに対し、トップエミッション構造の素子では、金属からなる反射陽極が用いられ、基板と反対方向にある透明電極(陰極)側から光が取り出されることから、陽極材料について言えば、ボトムエミッション構造の素子を製造する際はITO等の透明陽極を、トップエミッション構造の素子を製造する際はAl/Nd等の反射陽極を、それぞれ用いる。
Normally, in a bottom emission structure element, a transparent anode is used on the substrate side, and light is extracted from the substrate side, whereas in a top emission structure element, a reflective anode made of metal is used, and in a direction opposite to the substrate. Since light is extracted from a certain transparent electrode (cathode) side, regarding the anode material, a transparent anode such as ITO is used when manufacturing a device having a bottom emission structure, and Al / is used when manufacturing a device having a top emission structure. A reflective anode such as Nd is used.
本発明の有機EL素子は、特性悪化を防ぐため、定法に従い、必要に応じて捕水剤等とともに封止してもよい。
有機 The organic EL device of the present invention may be sealed together with a water catching agent, if necessary, according to a standard method, in order to prevent deterioration in characteristics.
以下、実施例を挙げて本発明をより具体的に説明するが、本発明は下記の実施例に限定されない。なお、使用した装置は以下のとおりである。
(1)LDI-MS:Bruker社製AutoFlex
(2)1H-NMR:日本電子(株)製JNM-ECP300 FT NMR SYSTEM
(3)基板洗浄:長州産業(株)製基板洗浄装置(減圧プラズマ方式)
(4)組成物の塗布:ミカサ(株)製スピンコーターMS-A100
(5)膜厚測定:(株)小坂研究所製微細形状測定機サーフコーダET-4000
(6)素子の作製:長州産業(株)製多機能蒸着装置システムC-E2L1G1-N
(7)素子の電流密度等の測定:(株)イーエッチシー製多チャンネルIVL測定装置
(8)屈折率(n)と消衰係数(k)の測定:ジェー・エー・ウーラムジャパン社製多入社角分光エリプソメーターVASE Hereinafter, the present invention will be described more specifically with reference to Examples, but the present invention is not limited to the following Examples. In addition, the used apparatus is as follows.
(1) LDI-MS: Bruker AutoFlex
(2) 1 H-NMR: JNM-ECP300 FT NMR SYSTEM manufactured by JEOL Ltd.
(3) Substrate cleaning: Choshu Sangyo Co., Ltd. substrate cleaning system (reduced pressure plasma method)
(4) Application of the composition: Spin coater MS-A100 manufactured by Mikasa Corporation
(5) Film thickness measurement: Surfcorder ET-4000, a fine shape measuring instrument manufactured by Kosaka Laboratory Co., Ltd.
(6) Fabrication of element: Choshu Sangyo Co., Ltd. multifunctional vapor deposition system C-E2L1G1-N
(7) Measurement of element current density, etc .: Multi-channel IVL measurement device manufactured by EC Corporation (8) Measurement of refractive index (n) and extinction coefficient (k): manufactured by JA Woollam Japan Multi-entry angle spectroscopic ellipsometer VASE
(1)LDI-MS:Bruker社製AutoFlex
(2)1H-NMR:日本電子(株)製JNM-ECP300 FT NMR SYSTEM
(3)基板洗浄:長州産業(株)製基板洗浄装置(減圧プラズマ方式)
(4)組成物の塗布:ミカサ(株)製スピンコーターMS-A100
(5)膜厚測定:(株)小坂研究所製微細形状測定機サーフコーダET-4000
(6)素子の作製:長州産業(株)製多機能蒸着装置システムC-E2L1G1-N
(7)素子の電流密度等の測定:(株)イーエッチシー製多チャンネルIVL測定装置
(8)屈折率(n)と消衰係数(k)の測定:ジェー・エー・ウーラムジャパン社製多入社角分光エリプソメーターVASE Hereinafter, the present invention will be described more specifically with reference to Examples, but the present invention is not limited to the following Examples. In addition, the used apparatus is as follows.
(1) LDI-MS: Bruker AutoFlex
(2) 1 H-NMR: JNM-ECP300 FT NMR SYSTEM manufactured by JEOL Ltd.
(3) Substrate cleaning: Choshu Sangyo Co., Ltd. substrate cleaning system (reduced pressure plasma method)
(4) Application of the composition: Spin coater MS-A100 manufactured by Mikasa Corporation
(5) Film thickness measurement: Surfcorder ET-4000, a fine shape measuring instrument manufactured by Kosaka Laboratory Co., Ltd.
(6) Fabrication of element: Choshu Sangyo Co., Ltd. multifunctional vapor deposition system C-E2L1G1-N
(7) Measurement of element current density, etc .: Multi-channel IVL measurement device manufactured by EC Corporation (8) Measurement of refractive index (n) and extinction coefficient (k): manufactured by JA Woollam Japan Multi-entry angle spectroscopic ellipsometer VASE
フラスコ内に、1,4-フェニレンジアミン0.502g、2-ブロモ-9-フェニル-9H-カルバゾール6.26g、ビス(ジベンジリデンアセトン)パラジウム0.106g及びナトリウムt-ブトキシド2.24gを入れ、フラスコ内を窒素置換した。そこへ、トルエン10mL及び別途あらかじめ準備したフェニルジ-t-ブチルホスフィンのトルエン溶液1.3mL(濃度:62.5g/L)を加え、90℃で3時間攪拌した。反応混合液を室温まで冷却した後、冷却した反応混合液とともに、トルエンと飽和食塩水とを分液漏斗に入れて、分液処理を行い、有機層を回収した。回収した有機層に活性炭を加えて室温で0.5時間攪拌した後、シリカゲルろ過を行い、得られたろ液を濃縮した。
得られた濃縮液を、メタノールと酢酸エチルの混合溶媒に滴下し、暫くの間、攪拌した。得られたスラリー溶液をろ過し、得られたろ物を乾燥して、目的とするアニリン誘導体Aを2.96g(収率:59%)得た。得られた目的物は、1H-NMRで同定した。
1H-NMR(500MHz, DMSO-d6) δ[ppm]: 8.09-8.15(m, 8H), 7.54-7.57(m, 8H), 7.43-7.47(m, 12H), 7.33-7.37(m, 4H), 7.24-7.30(m, 8H), 7.05(m, 8H), 6.92-6.94(m, 4H). 0.502 g of 1,4-phenylenediamine, 6.26 g of 2-bromo-9-phenyl-9H-carbazole, 0.106 g of bis (dibenzylideneacetone) palladium and 2.24 g of sodium t-butoxide were placed in a flask. The atmosphere in the flask was replaced with nitrogen. Thereto, 10 mL of toluene and 1.3 mL (concentration: 62.5 g / L) of a toluene solution of phenyldi-t-butylphosphine separately prepared in advance were added, and the mixture was stirred at 90 ° C. for 3 hours. After the reaction mixture was cooled to room temperature, toluene and a saturated saline solution were put into a separatory funnel together with the cooled reaction mixture, and liquid separation treatment was performed to collect an organic layer. Activated carbon was added to the collected organic layer, and the mixture was stirred at room temperature for 0.5 hour, followed by silica gel filtration, and the obtained filtrate was concentrated.
The obtained concentrated liquid was dropped into a mixed solvent of methanol and ethyl acetate, and stirred for a while. The obtained slurry solution was filtered, and the obtained residue was dried to obtain 2.96 g of the desired aniline derivative A (yield: 59%). The obtained target product was identified by 1 H-NMR.
1 H-NMR (500 MHz, DMSO-d6) δ [ppm]: 8.09-8.15 (m, 8H), 7.54-7.57 (m, 8H), 7.43-7.47 (m, 12H), 7.33-7.37 (m, 4H ), 7.24-7.30 (m, 8H), 7.05 (m, 8H), 6.92-6.94 (m, 4H).
得られた濃縮液を、メタノールと酢酸エチルの混合溶媒に滴下し、暫くの間、攪拌した。得られたスラリー溶液をろ過し、得られたろ物を乾燥して、目的とするアニリン誘導体Aを2.96g(収率:59%)得た。得られた目的物は、1H-NMRで同定した。
1H-NMR(500MHz, DMSO-d6) δ[ppm]: 8.09-8.15(m, 8H), 7.54-7.57(m, 8H), 7.43-7.47(m, 12H), 7.33-7.37(m, 4H), 7.24-7.30(m, 8H), 7.05(m, 8H), 6.92-6.94(m, 4H). 0.502 g of 1,4-phenylenediamine, 6.26 g of 2-bromo-9-phenyl-9H-carbazole, 0.106 g of bis (dibenzylideneacetone) palladium and 2.24 g of sodium t-butoxide were placed in a flask. The atmosphere in the flask was replaced with nitrogen. Thereto, 10 mL of toluene and 1.3 mL (concentration: 62.5 g / L) of a toluene solution of phenyldi-t-butylphosphine separately prepared in advance were added, and the mixture was stirred at 90 ° C. for 3 hours. After the reaction mixture was cooled to room temperature, toluene and a saturated saline solution were put into a separatory funnel together with the cooled reaction mixture, and liquid separation treatment was performed to collect an organic layer. Activated carbon was added to the collected organic layer, and the mixture was stirred at room temperature for 0.5 hour, followed by silica gel filtration, and the obtained filtrate was concentrated.
The obtained concentrated liquid was dropped into a mixed solvent of methanol and ethyl acetate, and stirred for a while. The obtained slurry solution was filtered, and the obtained residue was dried to obtain 2.96 g of the desired aniline derivative A (yield: 59%). The obtained target product was identified by 1 H-NMR.
1 H-NMR (500 MHz, DMSO-d6) δ [ppm]: 8.09-8.15 (m, 8H), 7.54-7.57 (m, 8H), 7.43-7.47 (m, 12H), 7.33-7.37 (m, 4H ), 7.24-7.30 (m, 8H), 7.05 (m, 8H), 6.92-6.94 (m, 4H).
[2]電荷輸送性組成物の調製及びその保存安定性の評価
[実施例1-1]
アニリン誘導体A0.243gと下記式で表されるアリールスルホン酸エステルB0.283gとの混合物に、キシレン10gを加えて室温で攪拌して溶解させ、得られた溶液を孔径0.2μmのシリンジフィルターでろ過して電荷輸送性組成物を得た。なお、アリールスルホン酸エステルBは、国際公開第2017/217457号に記載の方法に従って合成した(以下同様)。
[2] Preparation of charge transporting composition and evaluation of its storage stability [Example 1-1]
To a mixture of 0.243 g of the aniline derivative A and 0.283 g of the arylsulfonic acid ester B represented by the following formula, 10 g of xylene was added and dissolved by stirring at room temperature. The resulting solution was passed through a syringe filter having a pore size of 0.2 μm. After filtration, a charge transporting composition was obtained. The aryl sulfonic acid ester B was synthesized according to the method described in International Publication No. 2017/217457 (the same applies hereinafter).
[実施例1-1]
アニリン誘導体A0.243gと下記式で表されるアリールスルホン酸エステルB0.283gとの混合物に、キシレン10gを加えて室温で攪拌して溶解させ、得られた溶液を孔径0.2μmのシリンジフィルターでろ過して電荷輸送性組成物を得た。なお、アリールスルホン酸エステルBは、国際公開第2017/217457号に記載の方法に従って合成した(以下同様)。
To a mixture of 0.243 g of the aniline derivative A and 0.283 g of the arylsulfonic acid ester B represented by the following formula, 10 g of xylene was added and dissolved by stirring at room temperature. The resulting solution was passed through a syringe filter having a pore size of 0.2 μm. After filtration, a charge transporting composition was obtained. The aryl sulfonic acid ester B was synthesized according to the method described in International Publication No. 2017/217457 (the same applies hereinafter).
[実施例1-2]
アニリン誘導体A0.243g及びアリールスルホン酸エステルB0.283gの混合物に、トリエチレングリコールブチルメチルエーテル5g、安息香酸ブチル3g及びフタル酸ジメチル2gを加えて室温で攪拌して溶解させ、得られた溶液を孔径0.2μmのシリンジフィルターでろ過して電荷輸送性組成物を得た。 [Example 1-2]
To a mixture of 0.243 g of the aniline derivative A and 0.283 g of the arylsulfonic acid ester B, 5 g of triethylene glycol butyl methyl ether, 3 g of butyl benzoate and 2 g of dimethyl phthalate were added and stirred at room temperature to dissolve the resulting solution. The mixture was filtered through a syringe filter having a pore size of 0.2 μm to obtain a charge transporting composition.
アニリン誘導体A0.243g及びアリールスルホン酸エステルB0.283gの混合物に、トリエチレングリコールブチルメチルエーテル5g、安息香酸ブチル3g及びフタル酸ジメチル2gを加えて室温で攪拌して溶解させ、得られた溶液を孔径0.2μmのシリンジフィルターでろ過して電荷輸送性組成物を得た。 [Example 1-2]
To a mixture of 0.243 g of the aniline derivative A and 0.283 g of the arylsulfonic acid ester B, 5 g of triethylene glycol butyl methyl ether, 3 g of butyl benzoate and 2 g of dimethyl phthalate were added and stirred at room temperature to dissolve the resulting solution. The mixture was filtered through a syringe filter having a pore size of 0.2 μm to obtain a charge transporting composition.
[実施例1-3]
アニリン誘導体A0.243gと、アリールスルホン酸エステルB0.283gとの混合物に、3-フェノキシトルエン3gと安息香酸ブチル7gとを加えて室温で攪拌して溶解させて得られた溶液を、孔径0.2μmのシリンジフィルターでろ過して電荷輸送性組成物を得た。 [Example 1-3]
To a mixture of 0.243 g of the aniline derivative A and 0.283 g of the arylsulfonic acid ester B, 3 g of 3-phenoxytoluene and 7 g of butyl benzoate were added, and the mixture was stirred and dissolved at room temperature to obtain a solution having a pore size of 0.2. The mixture was filtered with a 2 μm syringe filter to obtain a charge transporting composition.
アニリン誘導体A0.243gと、アリールスルホン酸エステルB0.283gとの混合物に、3-フェノキシトルエン3gと安息香酸ブチル7gとを加えて室温で攪拌して溶解させて得られた溶液を、孔径0.2μmのシリンジフィルターでろ過して電荷輸送性組成物を得た。 [Example 1-3]
To a mixture of 0.243 g of the aniline derivative A and 0.283 g of the arylsulfonic acid ester B, 3 g of 3-phenoxytoluene and 7 g of butyl benzoate were added, and the mixture was stirred and dissolved at room temperature to obtain a solution having a pore size of 0.2. The mixture was filtered with a 2 μm syringe filter to obtain a charge transporting composition.
[比較例1-1]
アニリン誘導体Aの代わりに、下記式で表されるアニリン誘導体Cを用いた以外は、実施例1-1と同様の方法で、電荷輸送性組成物の調製を試みた。しかし、常温で攪拌しても固形分は溶解せず、更に50℃で加熱して攪拌しても固形分は溶解せず、80℃で加熱して攪拌したところ固形分は溶解した。得られた溶液を孔径0.2μmのシリンジフィルターでろ過して電荷輸送性組成物を得た。なお、アニリン誘導体Cは、国際公開第2015/137395号に記載された方法に従って合成した。 [Comparative Example 1-1]
Preparation of a charge transporting composition was attempted in the same manner as in Example 1-1, except that an aniline derivative C represented by the following formula was used instead of the aniline derivative A. However, the solid content did not dissolve even when stirred at room temperature, and the solid content did not dissolve even when heated and stirred at 50 ° C., and the solid content was dissolved when heated and stirred at 80 ° C. The obtained solution was filtered with a syringe filter having a pore size of 0.2 μm to obtain a charge transporting composition. In addition, the aniline derivative C was synthesized according to the method described in International Publication No. 2015/137395.
アニリン誘導体Aの代わりに、下記式で表されるアニリン誘導体Cを用いた以外は、実施例1-1と同様の方法で、電荷輸送性組成物の調製を試みた。しかし、常温で攪拌しても固形分は溶解せず、更に50℃で加熱して攪拌しても固形分は溶解せず、80℃で加熱して攪拌したところ固形分は溶解した。得られた溶液を孔径0.2μmのシリンジフィルターでろ過して電荷輸送性組成物を得た。なお、アニリン誘導体Cは、国際公開第2015/137395号に記載された方法に従って合成した。 [Comparative Example 1-1]
Preparation of a charge transporting composition was attempted in the same manner as in Example 1-1, except that an aniline derivative C represented by the following formula was used instead of the aniline derivative A. However, the solid content did not dissolve even when stirred at room temperature, and the solid content did not dissolve even when heated and stirred at 50 ° C., and the solid content was dissolved when heated and stirred at 80 ° C. The obtained solution was filtered with a syringe filter having a pore size of 0.2 μm to obtain a charge transporting composition. In addition, the aniline derivative C was synthesized according to the method described in International Publication No. 2015/137395.
[比較例1-2]
アニリン誘導体Aのかわりにアニリン誘導体Cを用いた以外は、実施例1-2と同様の方法で、電荷輸送性組成物の調製を試みた。しかし、常温で攪拌しても固形分は溶解せず、更に50℃、80℃のいずれの温度で加熱して攪拌しても固形分は溶解せず、電荷輸送性薄膜を製造し得る程度に均一な電荷輸送性組成物は得られなかった。 [Comparative Example 1-2]
An attempt was made to prepare a charge transporting composition in the same manner as in Example 1-2, except that aniline derivative C was used instead of aniline derivative A. However, the solid content does not dissolve even when stirred at room temperature, and does not dissolve even when heated and stirred at any temperature of 50 ° C. or 80 ° C., so that a charge transporting thin film can be produced. A uniform charge transporting composition was not obtained.
アニリン誘導体Aのかわりにアニリン誘導体Cを用いた以外は、実施例1-2と同様の方法で、電荷輸送性組成物の調製を試みた。しかし、常温で攪拌しても固形分は溶解せず、更に50℃、80℃のいずれの温度で加熱して攪拌しても固形分は溶解せず、電荷輸送性薄膜を製造し得る程度に均一な電荷輸送性組成物は得られなかった。 [Comparative Example 1-2]
An attempt was made to prepare a charge transporting composition in the same manner as in Example 1-2, except that aniline derivative C was used instead of aniline derivative A. However, the solid content does not dissolve even when stirred at room temperature, and does not dissolve even when heated and stirred at any temperature of 50 ° C. or 80 ° C., so that a charge transporting thin film can be produced. A uniform charge transporting composition was not obtained.
[比較例1-3]
アニリン誘導体Aのかわりにアニリン誘導体Cを用いた以外は、実施例1-3と同様の方法で、電荷輸送性組成物の調製を試みた。しかし、常温で攪拌しても固形分は溶解せず、更に50℃で加熱して攪拌しても固形分は溶解せず、80℃で加熱して攪拌したところ固形分は溶解した。得られた溶液を孔径0.2μmのシリンジフィルターでろ過して電荷輸送性組成物を得た。 [Comparative Example 1-3]
An attempt was made to prepare a charge transporting composition in the same manner as in Example 1-3, except that aniline derivative C was used instead of aniline derivative A. However, the solid content did not dissolve even when stirred at room temperature, and the solid content did not dissolve even when heated and stirred at 50 ° C., and the solid content was dissolved when heated and stirred at 80 ° C. The obtained solution was filtered with a syringe filter having a pore size of 0.2 μm to obtain a charge transporting composition.
アニリン誘導体Aのかわりにアニリン誘導体Cを用いた以外は、実施例1-3と同様の方法で、電荷輸送性組成物の調製を試みた。しかし、常温で攪拌しても固形分は溶解せず、更に50℃で加熱して攪拌しても固形分は溶解せず、80℃で加熱して攪拌したところ固形分は溶解した。得られた溶液を孔径0.2μmのシリンジフィルターでろ過して電荷輸送性組成物を得た。 [Comparative Example 1-3]
An attempt was made to prepare a charge transporting composition in the same manner as in Example 1-3, except that aniline derivative C was used instead of aniline derivative A. However, the solid content did not dissolve even when stirred at room temperature, and the solid content did not dissolve even when heated and stirred at 50 ° C., and the solid content was dissolved when heated and stirred at 80 ° C. The obtained solution was filtered with a syringe filter having a pore size of 0.2 μm to obtain a charge transporting composition.
得られた組成物を0℃で1週間保管し、保管後の組成物の固形分が析出しているか否かを確認した。結果を、各組成物の調製の際の固形分の溶解性とともに、表1に示す。
(4) The obtained composition was stored at 0 ° C. for one week, and it was confirmed whether or not solid content of the composition after storage was precipitated. The results are shown in Table 1 together with the solubility of the solids in the preparation of each composition.
表1から明らかなとおり、本発明の組成物では、いずれの溶媒組成でも析出は確認されなかった。一方、本発明で用いるアニリン誘導体Aに類似する構造を有するアニリン誘導体Cを含む比較例の組成物では、析出が確認された。この結果から、本発明の組成物は、比較例の組成物と比べ、保存安定性に優れることがわかった。
と お り As is clear from Table 1, no precipitation was confirmed in any of the solvent compositions in the composition of the present invention. On the other hand, in the composition of the comparative example containing the aniline derivative C having a structure similar to the aniline derivative A used in the present invention, precipitation was confirmed. From these results, it was found that the composition of the present invention was superior in storage stability to the composition of the comparative example.
[3]薄膜の光学物性の評価
[実施例2及び比較例2]
実施例1-1及び比較例1-1で得られた電荷輸送性組成物を、それぞれスピンコーターを用いて石英基板に塗布した後、大気雰囲気下で、80℃で1分間乾燥し、次いで200℃で15分間焼成して、60nmの均一な薄膜を基板上に作製した。
各薄膜の消衰係数k(波長400nm~800nmにおける平均消衰係数)と屈折率n(波長400nm~800nmにおける平均屈折率)の測定を行った。結果を表2に示す。 [3] Evaluation of optical properties of thin film [Example 2 and Comparative Example 2]
Each of the charge transporting compositions obtained in Example 1-1 and Comparative Example 1-1 was applied to a quartz substrate using a spin coater, and then dried at 80 ° C. for 1 minute in an air atmosphere. Firing at 15 ° C. for 15 minutes produced a uniform thin film of 60 nm on the substrate.
The extinction coefficient k (average extinction coefficient at a wavelength of 400 nm to 800 nm) and the refractive index n (average refractive index at a wavelength of 400 nm to 800 nm) of each thin film were measured. Table 2 shows the results.
[実施例2及び比較例2]
実施例1-1及び比較例1-1で得られた電荷輸送性組成物を、それぞれスピンコーターを用いて石英基板に塗布した後、大気雰囲気下で、80℃で1分間乾燥し、次いで200℃で15分間焼成して、60nmの均一な薄膜を基板上に作製した。
各薄膜の消衰係数k(波長400nm~800nmにおける平均消衰係数)と屈折率n(波長400nm~800nmにおける平均屈折率)の測定を行った。結果を表2に示す。 [3] Evaluation of optical properties of thin film [Example 2 and Comparative Example 2]
Each of the charge transporting compositions obtained in Example 1-1 and Comparative Example 1-1 was applied to a quartz substrate using a spin coater, and then dried at 80 ° C. for 1 minute in an air atmosphere. Firing at 15 ° C. for 15 minutes produced a uniform thin film of 60 nm on the substrate.
The extinction coefficient k (average extinction coefficient at a wavelength of 400 nm to 800 nm) and the refractive index n (average refractive index at a wavelength of 400 nm to 800 nm) of each thin film were measured. Table 2 shows the results.
表2から明らかなとおり、本発明の組成物から得られる薄膜は、比較例の組成物から得られる薄膜と比べ、低い消衰係数を示し、高透明で、かつ高屈折率であることがわかった。
As is clear from Table 2, the thin film obtained from the composition of the present invention exhibited a lower extinction coefficient, was highly transparent, and had a high refractive index, as compared with the thin film obtained from the composition of the comparative example. Was.
[4]ホールオンリー素子の作製及び評価
以下の例において、ITO基板としては、インジウム錫酸化物(ITO)が表面上に膜厚150nmでパターニングされた25mm×25mm×0.7tのガラス基板を用い、使用前にO2プラズマ洗浄装置(150W、30秒間)によって表面上の不純物を除去した。 [4] Production and Evaluation of Hole-Only Element In the following examples, a 25 mm × 25 mm × 0.7 t glass substrate in which indium tin oxide (ITO) was patterned with a thickness of 150 nm on the surface was used as the ITO substrate. Before use, impurities on the surface were removed by an O 2 plasma cleaning apparatus (150 W, 30 seconds).
以下の例において、ITO基板としては、インジウム錫酸化物(ITO)が表面上に膜厚150nmでパターニングされた25mm×25mm×0.7tのガラス基板を用い、使用前にO2プラズマ洗浄装置(150W、30秒間)によって表面上の不純物を除去した。 [4] Production and Evaluation of Hole-Only Element In the following examples, a 25 mm × 25 mm × 0.7 t glass substrate in which indium tin oxide (ITO) was patterned with a thickness of 150 nm on the surface was used as the ITO substrate. Before use, impurities on the surface were removed by an O 2 plasma cleaning apparatus (150 W, 30 seconds).
[実施例3]
実施例1-1で得られた組成物を、スピンコーターを用いてITO基板に塗布した後、大気下で、80℃で1分間乾燥し、次いで200℃で15分間焼成して、60nm膜厚の電荷輸送性薄膜を作製した。
その上に、蒸着装置(真空度1.0×10-5Pa、蒸着レート0.2nm/秒)を用いて、正孔輸送層として、α-NPD(N,N'-ジ(1-ナフチル)-N,N'-ジフェニルベンジジン)を0.2nm/秒にて30nm成膜し、更にその上に80nmのアルミニウム薄膜を形成し、素子を作製した。 [Example 3]
The composition obtained in Example 1-1 was applied to an ITO substrate using a spin coater, dried at 80 ° C. for 1 minute in the air, and baked at 200 ° C. for 15 minutes to obtain a film having a thickness of 60 nm. Was prepared.
On top of that, α-NPD (N, N′-di (1-naphthyl) was used as a hole transport layer using a vapor deposition device (vacuum degree: 1.0 × 10 −5 Pa, vapor deposition rate: 0.2 nm / sec). ) -N, N'-diphenylbenzidine) was formed at a thickness of 0.2 nm / sec to form a 30 nm film, and an 80 nm aluminum thin film was further formed thereon to produce a device.
実施例1-1で得られた組成物を、スピンコーターを用いてITO基板に塗布した後、大気下で、80℃で1分間乾燥し、次いで200℃で15分間焼成して、60nm膜厚の電荷輸送性薄膜を作製した。
その上に、蒸着装置(真空度1.0×10-5Pa、蒸着レート0.2nm/秒)を用いて、正孔輸送層として、α-NPD(N,N'-ジ(1-ナフチル)-N,N'-ジフェニルベンジジン)を0.2nm/秒にて30nm成膜し、更にその上に80nmのアルミニウム薄膜を形成し、素子を作製した。 [Example 3]
The composition obtained in Example 1-1 was applied to an ITO substrate using a spin coater, dried at 80 ° C. for 1 minute in the air, and baked at 200 ° C. for 15 minutes to obtain a film having a thickness of 60 nm. Was prepared.
On top of that, α-NPD (N, N′-di (1-naphthyl) was used as a hole transport layer using a vapor deposition device (vacuum degree: 1.0 × 10 −5 Pa, vapor deposition rate: 0.2 nm / sec). ) -N, N'-diphenylbenzidine) was formed at a thickness of 0.2 nm / sec to form a 30 nm film, and an 80 nm aluminum thin film was further formed thereon to produce a device.
[比較例3]
実施例1-1で得られた組成物のかわりに比較例1-1で得られた組成物を用いた以外は、実施例3と同様の方法で素子を作製した。 [Comparative Example 3]
A device was produced in the same manner as in Example 3, except that the composition obtained in Comparative Example 1-1 was used instead of the composition obtained in Example 1-1.
実施例1-1で得られた組成物のかわりに比較例1-1で得られた組成物を用いた以外は、実施例3と同様の方法で素子を作製した。 [Comparative Example 3]
A device was produced in the same manner as in Example 3, except that the composition obtained in Comparative Example 1-1 was used instead of the composition obtained in Example 1-1.
[実施例4]
実施例3と同様の方法で、ITO基板上に電荷輸送性薄膜を作製した。
その上に、窒素雰囲気のグローブボックス内で、TFBポリマー(Luminescence Technology社製LT-N148)の0.6質量%キシレン溶液をスピンコートにより塗布した後、130℃で10分間焼成し、20nmの電荷輸送性薄膜を正孔輸送層として形成した。更にその上に、実施例3と同様の方法で80nmのアルミニウム薄膜を形成し、素子を作製した。 [Example 4]
In the same manner as in Example 3, a charge transporting thin film was formed on an ITO substrate.
A 0.6% by mass xylene solution of a TFB polymer (LT-N148, manufactured by Luminescence Technology) was applied thereon by spin coating in a glove box under a nitrogen atmosphere, and then baked at 130 ° C. for 10 minutes to obtain a charge of 20 nm. A transportable thin film was formed as a hole transport layer. Further, an 80 nm aluminum thin film was formed thereon in the same manner as in Example 3 to fabricate a device.
実施例3と同様の方法で、ITO基板上に電荷輸送性薄膜を作製した。
その上に、窒素雰囲気のグローブボックス内で、TFBポリマー(Luminescence Technology社製LT-N148)の0.6質量%キシレン溶液をスピンコートにより塗布した後、130℃で10分間焼成し、20nmの電荷輸送性薄膜を正孔輸送層として形成した。更にその上に、実施例3と同様の方法で80nmのアルミニウム薄膜を形成し、素子を作製した。 [Example 4]
In the same manner as in Example 3, a charge transporting thin film was formed on an ITO substrate.
A 0.6% by mass xylene solution of a TFB polymer (LT-N148, manufactured by Luminescence Technology) was applied thereon by spin coating in a glove box under a nitrogen atmosphere, and then baked at 130 ° C. for 10 minutes to obtain a charge of 20 nm. A transportable thin film was formed as a hole transport layer. Further, an 80 nm aluminum thin film was formed thereon in the same manner as in Example 3 to fabricate a device.
[比較例4]
実施例1-1で得られた組成物の代わりに比較例1-1で得られた組成物を用いた以外は、実施例4と同様の方法で素子を作製した。 [Comparative Example 4]
A device was manufactured in the same manner as in Example 4, except that the composition obtained in Comparative Example 1-1 was used instead of the composition obtained in Example 1-1.
実施例1-1で得られた組成物の代わりに比較例1-1で得られた組成物を用いた以外は、実施例4と同様の方法で素子を作製した。 [Comparative Example 4]
A device was manufactured in the same manner as in Example 4, except that the composition obtained in Comparative Example 1-1 was used instead of the composition obtained in Example 1-1.
作製した素子を駆動電圧5Vで駆動した場合の電流密度を測定した。結果を表3に示す。
(4) The current density when the fabricated device was driven at a driving voltage of 5 V was measured. Table 3 shows the results.
表3に示したように、本発明の組成物から得られる電荷輸送性薄膜は、比較例の組成物から得られる電荷輸送性薄膜と比べて、正孔輸送層へのホール注入性に優れた。本発明の組成物から得られる電荷輸送性薄膜を用いることで、高特性の有機EL素子が期待できる。
As shown in Table 3, the charge transporting thin film obtained from the composition of the present invention was more excellent in hole injection into the hole transporting layer than the charge transporting thin film obtained from the composition of Comparative Example. . By using the charge transporting thin film obtained from the composition of the present invention, an organic EL device having high characteristics can be expected.
Claims (8)
- 下記式(1)で表されるアニリン誘導体を含む電荷輸送性組成物。
Z1は、ハロゲン原子、ニトロ基、シアノ基、Z3で置換されていてもよい炭素数6~20のアリール基又はZ3で置換されていてもよい炭素数2~20のヘテロアリール基であり、
Z2は、ハロゲン原子、ニトロ基、シアノ基、Z3で置換されていてもよい炭素数1~20のアルキル基、Z3で置換されていてもよい炭素数2~20のアルケニル基又はZ3で置換されていてもよい炭素数2~20のアルキニル基であり、
Z3は、ハロゲン原子、ニトロ基又はシアノ基である。)] A charge transport composition containing an aniline derivative represented by the following formula (1).
Z 1 is a halogen atom, a nitro group, a cyano group, a heteroaryl group aryl or Z 3 which do 2-20 carbon atoms substituted with Z 3 are carbon atoms that may 6 to be 20 substituted with Yes,
Z 2 is a halogen atom, a nitro group, a cyano group, Z 3-substituted of having 1 to 20 carbon atoms in the alkyl group, an alkenyl group of Z 3 is 1-2 carbon atoms which may be 20 substituted by or Z An alkynyl group having 2 to 20 carbon atoms which may be substituted by 3 ,
Z 3 is a halogen atom, a nitro group or a cyano group. )] - Arが、全て同じ基である請求項1記載の電荷輸送性組成物。 The charge transporting composition according to claim 1, wherein Ar is the same group.
- Arが、式(Ar1)~(Ar5)のいずれかで表される基である請求項2記載の電荷輸送性組成物。 3. The charge transport composition according to claim 2, wherein Ar is a group represented by any one of formulas (Ar1) to (Ar5).
- Arが、式(Ar1)で表される基である請求項3記載の電荷輸送性組成物。 The charge transport composition according to claim 3, wherein Ar is a group represented by the formula (Ar1).
- 更に、ドーパントを含む請求項1~4のいずれか1項記載の電荷輸送性組成物。 (5) The charge transporting composition according to any one of (1) to (4), further comprising a dopant.
- 前記ドーパントが、アリールスルホン酸エステル化合物である請求項5記載の電荷輸送性組成物。 The charge transporting composition according to claim 5, wherein the dopant is an arylsulfonic acid ester compound.
- 請求項1~5のいずれか1項記載の電荷輸送性組成物を用いて作製される電荷輸送性薄膜。 [6] A charge transporting thin film produced using the charge transporting composition according to any one of [1] to [5].
- 請求項7記載の電荷輸送性薄膜を備える有機エレクトロルミネッセンス素子。 An organic electroluminescent device comprising the charge transporting thin film according to claim 7.
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