WO2020203594A1 - Fluorene derivative and use thereof - Google Patents
Fluorene derivative and use thereof Download PDFInfo
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- WO2020203594A1 WO2020203594A1 PCT/JP2020/013505 JP2020013505W WO2020203594A1 WO 2020203594 A1 WO2020203594 A1 WO 2020203594A1 JP 2020013505 W JP2020013505 W JP 2020013505W WO 2020203594 A1 WO2020203594 A1 WO 2020203594A1
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- carbon atoms
- formula
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- groups
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- 125000003983 fluorenyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 title claims abstract 10
- 125000004093 cyano group Chemical group *C#N 0.000 claims abstract description 31
- 125000003118 aryl group Chemical group 0.000 claims abstract description 26
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims abstract description 26
- 125000001072 heteroaryl group Chemical group 0.000 claims abstract description 22
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 11
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 125000001309 chloro group Chemical group Cl* 0.000 claims abstract description 10
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052740 iodine Inorganic materials 0.000 claims abstract description 9
- 150000001602 bicycloalkyls Chemical group 0.000 claims abstract description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 160
- 239000002966 varnish Substances 0.000 claims description 70
- 125000000217 alkyl group Chemical group 0.000 claims description 65
- 239000010409 thin film Substances 0.000 claims description 55
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 45
- 150000001875 compounds Chemical class 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 44
- 238000005401 electroluminescence Methods 0.000 claims description 39
- 125000005843 halogen group Chemical group 0.000 claims description 31
- 239000002019 doping agent Substances 0.000 claims description 26
- 125000002521 alkyl halide group Chemical group 0.000 claims description 21
- 239000000126 substance Substances 0.000 claims description 19
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 14
- 125000003545 alkoxy group Chemical group 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 125000000304 alkynyl group Chemical group 0.000 claims description 10
- 239000003960 organic solvent Substances 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 claims description 6
- 125000001622 2-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C(*)C([H])=C([H])C2=C1[H] 0.000 claims description 6
- 125000004986 diarylamino group Chemical group 0.000 claims description 5
- 125000006736 (C6-C20) aryl group Chemical group 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 150000004820 halides Chemical class 0.000 claims description 4
- 125000002577 pseudohalo group Chemical group 0.000 claims description 4
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 3
- 125000003837 (C1-C20) alkyl group Chemical group 0.000 abstract 1
- 125000006649 (C2-C20) alkynyl group Chemical group 0.000 abstract 1
- 125000006651 (C3-C20) cycloalkyl group Chemical group 0.000 abstract 1
- 125000003860 C1-C20 alkoxy group Chemical group 0.000 abstract 1
- 125000003358 C2-C20 alkenyl group Chemical group 0.000 abstract 1
- -1 n-octyl group Chemical group 0.000 description 171
- 239000010410 layer Substances 0.000 description 128
- 238000002347 injection Methods 0.000 description 48
- 239000007924 injection Substances 0.000 description 48
- 150000002220 fluorenes Chemical class 0.000 description 44
- 229910052757 nitrogen Inorganic materials 0.000 description 28
- 239000002904 solvent Substances 0.000 description 28
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 26
- 239000000758 substrate Substances 0.000 description 26
- 239000000463 material Substances 0.000 description 25
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 24
- 230000015572 biosynthetic process Effects 0.000 description 24
- 238000003786 synthesis reaction Methods 0.000 description 24
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 21
- 230000005525 hole transport Effects 0.000 description 21
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 19
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 18
- 239000010408 film Substances 0.000 description 18
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 16
- XSIFPSYPOVKYCO-UHFFFAOYSA-N butyl benzoate Chemical compound CCCCOC(=O)C1=CC=CC=C1 XSIFPSYPOVKYCO-UHFFFAOYSA-N 0.000 description 16
- 125000001153 fluoro group Chemical group F* 0.000 description 16
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 15
- 125000003342 alkenyl group Chemical group 0.000 description 15
- NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 14
- 238000005160 1H NMR spectroscopy Methods 0.000 description 13
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 13
- 238000007740 vapor deposition Methods 0.000 description 13
- IAZDPXIOMUYVGZ-WFGJKAKNSA-N Dimethyl sulfoxide Chemical compound [2H]C([2H])([2H])S(=O)C([2H])([2H])[2H] IAZDPXIOMUYVGZ-WFGJKAKNSA-N 0.000 description 12
- 150000002430 hydrocarbons Chemical group 0.000 description 11
- 238000005259 measurement Methods 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 11
- 239000000243 solution Substances 0.000 description 11
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical group CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 229910052731 fluorine Inorganic materials 0.000 description 10
- IYDGMDWEHDFVQI-UHFFFAOYSA-N phosphoric acid;trioxotungsten Chemical compound O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.O=[W](=O)=O.OP(O)(O)=O IYDGMDWEHDFVQI-UHFFFAOYSA-N 0.000 description 10
- 239000000047 product Substances 0.000 description 10
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 9
- 125000001931 aliphatic group Chemical group 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- SNAQINZKMQFYFV-UHFFFAOYSA-N 1-[2-[2-(2-methoxyethoxy)ethoxy]ethoxy]butane Chemical compound CCCCOCCOCCOCCOC SNAQINZKMQFYFV-UHFFFAOYSA-N 0.000 description 8
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 8
- 125000004122 cyclic group Chemical group 0.000 description 8
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 8
- 238000010304 firing Methods 0.000 description 8
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 8
- 239000004810 polytetrafluoroethylene Substances 0.000 description 8
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 8
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 8
- 230000008033 biological extinction Effects 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- FBSAITBEAPNWJG-UHFFFAOYSA-N dimethyl phthalate Natural products CC(=O)OC1=CC=CC=C1OC(C)=O FBSAITBEAPNWJG-UHFFFAOYSA-N 0.000 description 7
- 229960001826 dimethylphthalate Drugs 0.000 description 7
- 239000011964 heteropoly acid Substances 0.000 description 7
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 7
- 239000012046 mixed solvent Substances 0.000 description 7
- 239000011148 porous material Substances 0.000 description 7
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 6
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 6
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 6
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 6
- IVSZLXZYQVIEFR-UHFFFAOYSA-N m-xylene Chemical group CC1=CC=CC(C)=C1 IVSZLXZYQVIEFR-UHFFFAOYSA-N 0.000 description 6
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 6
- NSNPSJGHTQIXDO-UHFFFAOYSA-N naphthalene-1-carbonyl chloride Chemical compound C1=CC=C2C(C(=O)Cl)=CC=CC2=C1 NSNPSJGHTQIXDO-UHFFFAOYSA-N 0.000 description 6
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000002346 layers by function Substances 0.000 description 5
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- DHRLEVQXOMLTIM-UHFFFAOYSA-N phosphoric acid;trioxomolybdenum Chemical compound O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.O=[Mo](=O)=O.OP(O)(O)=O DHRLEVQXOMLTIM-UHFFFAOYSA-N 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 5
- 239000008096 xylene Substances 0.000 description 5
- ONUFSRWQCKNVSL-UHFFFAOYSA-N 1,2,3,4,5-pentafluoro-6-(2,3,4,5,6-pentafluorophenyl)benzene Chemical group FC1=C(F)C(F)=C(F)C(F)=C1C1=C(F)C(F)=C(F)C(F)=C1F ONUFSRWQCKNVSL-UHFFFAOYSA-N 0.000 description 4
- HZNVUJQVZSTENZ-UHFFFAOYSA-N 2,3-dichloro-5,6-dicyano-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(C#N)=C(C#N)C1=O HZNVUJQVZSTENZ-UHFFFAOYSA-N 0.000 description 4
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- JGFZNNIVVJXRND-UHFFFAOYSA-N N,N-Diisopropylethylamine (DIPEA) Chemical compound CCN(C(C)C)C(C)C JGFZNNIVVJXRND-UHFFFAOYSA-N 0.000 description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 4
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 4
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 4
- 239000004305 biphenyl Substances 0.000 description 4
- 235000010290 biphenyl Nutrition 0.000 description 4
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical class C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 4
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 description 4
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 4
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 4
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229910000027 potassium carbonate Inorganic materials 0.000 description 4
- 235000011181 potassium carbonates Nutrition 0.000 description 4
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 4
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 3
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 3
- 125000006021 1-methyl-2-propenyl group Chemical group 0.000 description 3
- 125000006017 1-propenyl group Chemical group 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- BZLVMXJERCGZMT-UHFFFAOYSA-N Methyl tert-butyl ether Chemical compound COC(C)(C)C BZLVMXJERCGZMT-UHFFFAOYSA-N 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000006161 Suzuki-Miyaura coupling reaction Methods 0.000 description 3
- 239000005456 alcohol based solvent Substances 0.000 description 3
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 description 3
- 229910000024 caesium carbonate Inorganic materials 0.000 description 3
- 238000009903 catalytic hydrogenation reaction Methods 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 3
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000000706 filtrate Substances 0.000 description 3
- 150000008040 ionic compounds Chemical class 0.000 description 3
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 3
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- 125000001624 naphthyl group Chemical group 0.000 description 3
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 3
- 125000005561 phenanthryl group Chemical group 0.000 description 3
- 239000002798 polar solvent Substances 0.000 description 3
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 3
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 125000000542 sulfonic acid group Chemical group 0.000 description 3
- 230000002194 synthesizing effect Effects 0.000 description 3
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical class N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- 239000001211 (E)-4-phenylbut-3-en-2-one Substances 0.000 description 2
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- UKVIEHSSVKSQBA-UHFFFAOYSA-N methane;palladium Chemical compound C.[Pd] UKVIEHSSVKSQBA-UHFFFAOYSA-N 0.000 description 1
- RPNNPZHFJPXFQS-UHFFFAOYSA-N methane;rhodium Chemical compound C.[Rh] RPNNPZHFJPXFQS-UHFFFAOYSA-N 0.000 description 1
- NCPHGZWGGANCAY-UHFFFAOYSA-N methane;ruthenium Chemical compound C.[Ru] NCPHGZWGGANCAY-UHFFFAOYSA-N 0.000 description 1
- 125000005948 methanesulfonyloxy group Chemical group 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- 229940095102 methyl benzoate Drugs 0.000 description 1
- GXMIHVHJTLPVKL-UHFFFAOYSA-N n,n,2-trimethylpropanamide Chemical compound CC(C)C(=O)N(C)C GXMIHVHJTLPVKL-UHFFFAOYSA-N 0.000 description 1
- 125000006606 n-butoxy group Chemical group 0.000 description 1
- 125000006610 n-decyloxy group Chemical group 0.000 description 1
- 125000001298 n-hexoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000006609 n-nonyloxy group Chemical group 0.000 description 1
- 125000006608 n-octyloxy group Chemical group 0.000 description 1
- 125000003935 n-pentoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000003506 n-propoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000006501 nitrophenyl group Chemical group 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
- 125000000611 organothio group Chemical group 0.000 description 1
- 125000002971 oxazolyl group Chemical group 0.000 description 1
- MUMZUERVLWJKNR-UHFFFAOYSA-N oxoplatinum Chemical compound [Pt]=O MUMZUERVLWJKNR-UHFFFAOYSA-N 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 125000000636 p-nitrophenyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)[N+]([O-])=O 0.000 description 1
- 125000001037 p-tolyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 1
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 1
- 125000005003 perfluorobutyl group Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)* 0.000 description 1
- 125000005004 perfluoroethyl group Chemical group FC(F)(F)C(F)(F)* 0.000 description 1
- 125000005009 perfluoropropyl group Chemical group FC(C(C(F)(F)F)(F)F)(F)* 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- CKFBFQHBUCDOHL-UHFFFAOYSA-N phenoxy(phenyl)methanol Chemical compound C=1C=CC=CC=1C(O)OC1=CC=CC=C1 CKFBFQHBUCDOHL-UHFFFAOYSA-N 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 125000002270 phosphoric acid ester group Chemical group 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910003446 platinum oxide Inorganic materials 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000734 polysilsesquioxane polymer Polymers 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- LPNYRYFBWFDTMA-UHFFFAOYSA-N potassium tert-butoxide Chemical compound [K+].CC(C)(C)[O-] LPNYRYFBWFDTMA-UHFFFAOYSA-N 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- FVSKHRXBFJPNKK-UHFFFAOYSA-N propionitrile Chemical compound CCC#N FVSKHRXBFJPNKK-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003230 pyrimidines Chemical class 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 125000005920 sec-butoxy group Chemical group 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 1
- MFRIHAYPQRLWNB-UHFFFAOYSA-N sodium tert-butoxide Chemical compound [Na+].CC(C)(C)[O-] MFRIHAYPQRLWNB-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 125000002130 sulfonic acid ester group Chemical group 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 description 1
- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003518 tetracenes Chemical class 0.000 description 1
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 1
- 150000007970 thio esters Chemical group 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- DENPQNAWGQXKCU-UHFFFAOYSA-N thiophene-2-carboxamide Chemical compound NC(=O)C1=CC=CS1 DENPQNAWGQXKCU-UHFFFAOYSA-N 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
- 125000005951 trifluoromethanesulfonyloxy group Chemical group 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C237/00—Carboxylic acid amides, the carbon skeleton of the acid part being further substituted by amino groups
- C07C237/48—Carboxylic acid amides, the carbon skeleton of the acid part being further substituted by amino groups having the carbon atom of at least one of the carboxamide groups bound to a carbon atom of a six-membered aromatic ring being part of a condensed ring system of the same carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C231/00—Preparation of carboxylic acid amides
- C07C231/02—Preparation of carboxylic acid amides from carboxylic acids or from esters, anhydrides, or halides thereof by reaction with ammonia or amines
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C231/00—Preparation of carboxylic acid amides
- C07C231/14—Preparation of carboxylic acid amides by formation of carboxamide groups together with reactions not involving the carboxamide groups
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C233/00—Carboxylic acid amides
- C07C233/64—Carboxylic acid amides having carbon atoms of carboxamide groups bound to carbon atoms of six-membered aromatic rings
- C07C233/77—Carboxylic acid amides having carbon atoms of carboxamide groups bound to carbon atoms of six-membered aromatic rings having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by amino groups
- C07C233/80—Carboxylic acid amides having carbon atoms of carboxamide groups bound to carbon atoms of six-membered aromatic rings having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by amino groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by a carbon atom of a six-membered aromatic ring
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D403/00—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00
- C07D403/02—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00 containing two hetero rings
- C07D403/10—Heterocyclic compounds containing two or more hetero rings, having nitrogen atoms as the only ring hetero atoms, not provided for by group C07D401/00 containing two hetero rings linked by a carbon chain containing aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D409/00—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms
- C07D409/02—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings
- C07D409/12—Heterocyclic compounds containing two or more hetero rings, at least one ring having sulfur atoms as the only ring hetero atoms containing two hetero rings linked by a chain containing hetero atoms as chain links
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C2603/00—Systems containing at least three condensed rings
- C07C2603/02—Ortho- or ortho- and peri-condensed systems
- C07C2603/04—Ortho- or ortho- and peri-condensed systems containing three rings
- C07C2603/06—Ortho- or ortho- and peri-condensed systems containing three rings containing at least one ring with less than six ring members
- C07C2603/10—Ortho- or ortho- and peri-condensed systems containing three rings containing at least one ring with less than six ring members containing five-membered rings
- C07C2603/12—Ortho- or ortho- and peri-condensed systems containing three rings containing at least one ring with less than six ring members containing five-membered rings only one five-membered ring
- C07C2603/18—Fluorenes; Hydrogenated fluorenes
Definitions
- the present invention relates to a fluorene derivative and its use.
- a charge transporting thin film made of an organic compound is used as a light emitting layer and a charge injection layer.
- the hole injection layer is responsible for the transfer of electric charges between the anode and the hole transport layer or the light emitting layer, and fulfills an important function for achieving low voltage drive and high brightness of the organic EL element.
- the refractive index of the functional film used for the purpose of improving the light extraction efficiency is achieved by using a hole injection layer or a hole transport layer having a relatively high or low refractive index in consideration of the overall configuration of the device and the refractive index of other adjacent members. Attempts have been made to achieve this (Patent Documents 1 and 2).
- the refractive index is an important factor in the design of the organic EL element, and in the material for the organic EL element, the refractive index is also considered to be an important physical property value to be considered.
- the charge-transporting thin film for organic EL elements has been in the visible region because the coloring of the charge-transporting thin film used for the organic EL element reduces the color purity and color reproducibility of the organic EL element. It is desired to have high transparency and high transparency (see Patent Document 3).
- the method of forming the hole injection layer is roughly divided into a dry process represented by a vapor deposition method and a wet process represented by a spin coating method. Comparing each of these processes, the wet process can efficiently produce a thin film having a large area and high flatness. Therefore, as the area of organic EL displays is increasing, there is always a demand for a wet process material that can be formed by a wet process and provides a charge-transporting thin film having excellent refractive index and transparency. ..
- the present invention has been made in view of the above circumstances, and when a thin film having good charge transportability, high refractive index and high transparency is provided by low-temperature firing, and this thin film is applied to a hole injection layer or the like. It is an object of the present invention to provide a compound capable of realizing an organic EL device having excellent characteristics.
- the present inventors have obtained a thin film obtained by using a predetermined fluorene derivative, which exhibits high charge transportability, high transparency and high refractive index.
- a predetermined fluorene derivative which exhibits high charge transportability, high transparency and high refractive index.
- an organic EL device having excellent properties can be obtained when this thin film is applied to a hole injection layer or the like, and completed the present invention.
- a fluorene derivative represented by the following formula (1) [In the formula, Z 1 and Z 2 are groups represented by any of the following formulas (2) to (7) independently; (Wherein, a broken line is a bond .R A and R B are each independently a hydrogen atom or an alkyl group having 1 to 20 carbon atoms.) Ar 1 and Ar 2 are independently an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms, and are a cyano group, a chlorine atom, a bromine atom, an iodine atom, a nitro group, and 1 carbon atom.
- Ar 3 and Ar 4 are groups represented by any of the following formulas (8) to (11) independently.
- R 1 is substituted with a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or a cyano group, a nitro group, a halogen atom, an alkyl group having 1 to 20 carbon atoms or an alkyl halide group having 1 to 20 carbon atoms.
- a heteroaryl group having 6 to 20 carbon atoms, or a heteroaryl group having 6 to 20 carbon atoms which may be substituted with an alkyl group having 1 to 20 carbon atoms or an alkyl halide group having 1 to 20 carbon atoms, or the following.
- R 2 to R 52 are independently hydrogen atoms, cyano groups, nitro groups, halogen atoms, alkyl groups having 1 to 20 carbon atoms, or alkyl halide groups having 1 to 20 carbon atoms.
- D A is a diarylamino group each aryl group is independently C 6 -C 20 -aryl group
- R 53 to R 76 are independently hydrogen atoms, cyano groups, nitro groups, halogen atoms, alkyl groups having 1 to 20 carbon atoms, or alkyl halide groups having 1 to 20 carbon atoms.
- Ar 1 and Ar 2 are independently phenyl group, 1-naphthyl group or 2-naphthyl group, or the following formulas (T1-1) to (T11-4), formulas (F1-1) to (F4-4). ), The fluorene derivative of 1 which is a group represented by the formulas (N1-1) to (N10-7) or the formulas (M1-1) to (M4-3).
- a charge-transporting substance comprising a fluorene derivative according to any one of 7.1 to 6.
- the compound represented by the formula (15) is reacted with the compound represented by the formula (16-1) and the compound represented by the formula (16-2) to obtain an intermediate represented by the formula (17).
- Process The step of reducing the intermediate represented by the formula (17) to obtain the intermediate represented by the formula (18), and the intermediate represented by the formula (18) and the intermediate represented by the formula (19-1).
- a method for producing a fluorene derivative represented by the following formula (1) which comprises a step of reacting a halide with a halide represented by the formula (19-2).
- a halide represented by the formula (19-2) In the formula, Z 1 , Z 2 , Ar 1 , Ar 2 , Ar 3 and Ar 4 are the same as above; X is a halogen atom or pseudohalogen group.
- the charge-transporting varnish containing the fluorene derivative of the present invention By using the charge-transporting varnish containing the fluorene derivative of the present invention, a thin film having high transparency and high refractive index can be produced, and a thin film having excellent charge transportability even when fired at a low temperature of 200 ° C. or lower. Can be produced.
- the charge-transporting thin film obtained from the charge-transporting varnish of the present invention can be suitably used as a thin film for electronic devices such as organic EL devices, and the hole injection layer and the hole transport layer of the organic EL device, particularly By using it as a hole injection layer, an organic EL device having excellent characteristics can be obtained.
- fluorene derivative The fluorene derivative of the present invention is represented by the following formula (1).
- Examples of the compound represented by the formula (1) include, but are not limited to, those shown below.
- Z 1 and Z 2 are groups represented by any of the following formulas (2) to (7) independently.
- Z 1 and Z 2 are groups represented by the formula (4) or (5), the carbon atom contained in this group is bonded to the nitrogen atom in the formula (1).
- R A and R B are each independently a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, a hydrogen atom is preferable.
- Alkyl groups R A and 1 to 20 carbon atoms represented by R B is a linear, branched, may be any of cyclic, and examples thereof include a methyl group, an ethyl group, n- propyl group, isopropyl Group, n-butyl group, isobutyl group, sec-butyl group, tert-butyl group, n-pentyl group, n-hexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group, etc.
- Linear or branched alkyl group having 1 to 20 carbon atoms ; cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, bicyclobutyl group, bicyclopentyl group , Bicyclohexyl group, bicycloheptyl group, bicyclooctyl group, bicyclononyl group, bicyclodecyl group and other cyclic alkyl groups having 3 to 20 carbon atoms.
- the groups represented by the formulas (2), (3), (4), (5) or (6) are preferable, and the groups represented by the formulas (2), (4) or (6) are represented.
- the group represented by the formula (2) is more preferable, and the group represented by the formula (2) is even more preferable.
- Ar 1 and Ar 2 are independently aryl groups having 6 to 20 carbon atoms or heteroaryl groups having 2 to 20 carbon atoms.
- Examples of the aryl group having 6 to 20 carbon atoms represented by Ar 1 and Ar 2 include a phenyl group, a 1-naphthyl group, a 2-naphthyl group, a 1-anthryl group, a 2-anthryl group, a 9-anthryl group and a 1-. Examples thereof include a phenanthryl group, a 2-phenanthril group, a 3-phenanthril group, a 4-phenylantril group, a 9-phenanthril group and the like.
- Examples of the heteroaryl group having 2 to 20 carbon atoms represented by Ar 1 and Ar 2 include the following formulas (T1-1) to (T11-4), formulas (F1-1) to (F4-4), and formulas (F4-4). Examples thereof include groups represented by N1-1) to (N10-7) and formulas (M1-1) to (M4-3), but the present invention is not limited thereto. Among them, from the viewpoint of realizing a higher refractive index, the sulfur-containing heteroaryl group and the nitrogen-containing heteroaryl group are preferable, and the sulfur-containing heteroaryl group is more preferable. (In the formula, the broken line is the joiner.)
- the aryl group having 6 to 20 carbon atoms or the heteroaryl group having 2 to 20 carbon atoms represented by Ar 1 and Ar 2 has a cyano group, a chlorine atom, a bromine atom, an iodine atom, a nitro group and 1 to 20 carbon atoms. It may be substituted with an alkyl group, an alkenyl group having 2 to 20 carbon atoms, an alkynyl group having 2 to 20 carbon atoms, or an alkoxy group having 1 to 20 carbon atoms.
- Alkyl group having 1 to 20 carbon atoms may be linear, branched, may be any of cyclic, and examples thereof include those of formula similar to that described in the description of R A and R B (6) Can be mentioned.
- the alkenyl group having 2 to 20 carbon atoms may be linear, branched or cyclic, and specific examples thereof include an ethenyl group, an n-1-propenyl group, an n-2-propenyl group and 1-methylethenyl.
- the alkynyl group having 2 to 20 carbon atoms may be linear, branched or cyclic, and specific examples thereof include an ethynyl group, an n-1-propynyl group, an n-2-propynyl group and an n-1.
- n-2-butynyl group n-3-butynyl group, 1-methyl-2-propynyl group, n-1-pentynyl group, n-2-pentynyl group, n-3-pentynyl group, n- 4-pentynyl group, 1-methyl-n-butynyl group, 2-methyl-n-butynyl group, 3-methyl-n-butynyl group, 1,1-dimethyl-n-propynyl group, n-1-hexynyl group, Examples thereof include an n-1-decynyl group, an n-1-pentadecynyl group, and an n-1-eicosynyl group.
- the alkoxy group having 1 to 20 carbon atoms may be linear, branched or cyclic, and specific examples thereof include a methoxy group, an ethoxy group, an n-propoxy group, an isopropoxy group and an n-butoxy group. Number of carbon atoms of isobutoxy group, sec-butoxy group, tert-butoxy group, n-pentyloxy group, n-hexyloxy group, n-heptyloxy group, n-octyloxy group, n-nonyloxy group, n-decyloxy group, etc.
- cyclopropyloxy group cyclobutyloxy group, cyclopentyloxy group, cyclohexyloxy group, cycloheptyloxy group, cyclooctyloxy group, cyclononyloxy group, cyclodecyloxy group , Bicyclobutyloxy group, bicyclopentyloxy group, bicyclohexyloxy group, bicycloheptyloxy group, bicyclooctyloxy group, bicyclononyloxy group, bicyclodecyloxy group and other cyclic alkoxy groups having 3 to 20 carbon atoms.
- Ar 1 and Ar 2 include phenyl group; nitrophenyl group; methylphenyl group, ethylphenyl group, propylphenyl group, dimethylphenyl group, diethylphenyl group, dipropylphenyl group, trimethylphenyl group, and triethylphenyl.
- tripropylphenyl group alkylphenyl group such as these structural isomers; alkenylphenyl group such as vinylphenyl group, 1-propenylphenyl group, 2-propenylphenyl group; ethynylphenyl group, 1-propynylphenyl group, 2 -Alquinylphenyl group such as propynylphenyl group; 1-naphthyl group; nitro-1-naphthyl group; methyl-1-naphthyl group, ethyl-1-naphthyl group, propyl-1-naphthyl group, dimethyl-1-naphthyl group, Diethyl-1-naphthyl group, dipropyl-1-naphthyl group, trimethyl-1-naphthyl group, triethyl-1-naphthyl group, tripropyl-1-n-n
- -2-naphthyl group alkenyl-2-naphthyl group such as vinyl-2-naphthyl group, 1-propenyl-2-naphthyl group, 2-propenyl-2-naphthyl group; ethynyl-2-naphthyl group, 1-propynyl- Alkinyl-2-naphthyl groups such as 2-naphthyl group and 2-propynyl-2-naphthyl group; 9-anthryl group, 1-phenyl group, 2-phenyl group, 3-phenyl group, 9-phenyl group; formula (T1).
- the groups represented by -1) to (T11-4) are preferable.
- Ar 1 and Ar 2 are preferably the same group from the viewpoint of easiness of synthesizing the fluorene derivative.
- Ar 3 and Ar 4 are groups represented by any of the following formulas (8) to (11) independently.
- R 1 is a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or a cyano group, a nitro group, a halogen atom, an alkyl group having 1 to 20 carbon atoms, or an alkyl halide having 1 to 20 carbon atoms.
- D A is a diarylamino group each aryl group is independently C 6 -C 20 -aryl group.
- Examples of the alkyl group having 1 to 20 carbon atoms is an alkyl group and the substituent group having 1 to 20 carbon atoms represented by R 1, the same as those described in the description of R A and R B of formula (6) Things can be mentioned.
- Examples of the aryl group having 6 to 20 carbon atoms represented by R 1 include those similar to those described in the description of Ar 1 and Ar 2 of the formula (1).
- the heteroaryl group having 2 to 20 carbon atoms represented by R 1 includes 2-thienyl group, 3-thienyl group, 2-furanyl group, 3-furanyl group, 2-oxazolyl group, 4-oxazolyl group and 5-.
- halogen atom examples include a fluorine atom, a chlorine atom, a bromine atom, an iodine atom and the like.
- alkyl halide group having 1 to 20 carbon atoms examples include those in which a part or all of the hydrogen atoms of the alkyl group having 1 to 20 carbon atoms are substituted with the halogen atom. In the description of (B), the same ones as those described later can be mentioned.
- diarylamino group examples include a diphenylamino group, a dinaphthylamino group, a dianthrylamino group, an N-phenyl-N-naphthylamino group, an N-phenyl-N-anthrylamino group, and an N-naphthyl-N-anthryl. Amino groups and the like can be mentioned.
- R 1 includes a hydrogen atom, a phenyl group, a 1-naphthyl group, a 2-naphthyl group, a 1-anthryl group, a 2-anthryl group, a 9-anthryl group, a 1-phenanthryl group, and a 2-phenanthryl group.
- 3-Phenyltril group, 4-Phenyltril group, 9-Phenyltril group, group represented by the formula (12-1), group represented by the formula (13-1) and the like are preferable, and the group represented by the formula (12-1) is preferable.
- the group to be used, the group represented by the formula (13-1) and the phenyl group are more preferable, and the phenyl group is even more preferable.
- R 2 to R 76 are independently hydrogen atoms, cyano groups, nitro groups, halogen atoms, alkyl groups having 1 to 20 carbon atoms, or halogenated groups having 1 to 20 carbon atoms. It is an alkyl group.
- the alkyl group of R 2 ⁇ 1 to 20 carbon atoms represented by R 76, include the same ones as mentioned in the description of R A and R B of formula (6).
- R 2 to R 76 a hydrogen atom, a cyano group, a nitro group, a halogen atom, an alkyl group having 1 to 10 carbon atoms or an alkyl halide group having 1 to 10 carbon atoms are preferable, and a hydrogen atom and a cyano group are used.
- a group, a nitro group, a halogen atom and a trifluoromethyl group are more preferable, and it is even more preferable that all of them are hydrogen atoms.
- Examples of the groups represented by the formulas (8) to (11) include, but are not limited to, those shown below. (In the formula, R 1 to R 52 are the same as above. The broken line is the connecting hand.)
- the fluorene derivative of the present invention can be synthesized by the method shown in Scheme A below. (In the formula, Z 1 , Z 2 , Ar 1 , Ar 2 , Ar 3 and Ar 4 are the same as above. X is a halogen atom or a pseudohalogen group.)
- halogen atom examples include a fluorine atom, a chlorine atom, a bromine atom, an iodine atom and the like.
- the pseudo-halogen group includes a fluoroalkylsulfonyloxy group such as a methanesulfonyloxy group, a trifluoromethanesulfonyloxy group and a nonafluorobutanesulfonyloxy group; and an aromatic sulfonyloxy group such as a benzenesulfonyloxy group and a toluenesulfonyloxy group. And so on.
- the compound represented by the formula (15) can be synthesized by a conventionally known method, for example, according to the method described in J. Mater. Chem. C, 2014, pp. 1068-1075.
- the first step is carried out by a coupling reaction from the compound represented by the formula (15), the compound represented by the formula (16-1) and the compound represented by the formula (16-2). This is a step of obtaining an intermediate represented by the formula (17).
- a synthesis method using the Suzuki-Miyaura coupling reaction is shown as an example, but it is also possible to synthesize using another coupling reaction.
- the catalysts used in the Suzuki-Miyaura coupling reaction are [1,1'-bis (diphenylphosphino) ferrocene] palladium (II) dichloride (PdCl 2 (dppf)), tetrakis (triphenylphosphine) palladium (Pd (PPh)).
- preferred catalysts are PdCl 2 (dppf), Pd (PPh 3 ) 4 , Pd (PPh 3 ) 2 Cl 2 , and Pd (Pt-Bu 3 ) 2 from the viewpoint of efficiently obtaining the desired product. More preferably, it is Pd (PPh 3 ) 4 and Pd (Pt-Bu 3 ) 2 .
- the amount of the catalyst used is usually about 0.1 to 50 mol%, preferably 0.1 to 30 mol%, and more preferably 1 to 10 mol% with respect to the compound represented by the formula (15).
- a base is also used in the Suzuki-Miyaura coupling reaction, and the base includes hydroxides such as sodium hydroxide, potassium hydroxide and cesium hydroxide, tert-butoxysodium, tert-butoxypotassium and the like.
- bases are carbonates such as sodium carbonate, potassium carbonate, cesium carbonate, sodium hydrogen carbonate and potassium hydrogen carbonate, and phosphates such as potassium phosphate from the viewpoint of efficiently obtaining the desired product.
- Potassium carbonate and cesium carbonate are preferable.
- the amount of the base used is usually about 2 to 20 equivalents, preferably 1 to 20 equivalents, and more preferably 2 to 8 equivalents, relative to the compound represented by the formula (15).
- the solvent used in the first step is not particularly limited as long as it does not adversely affect the reaction, but specific examples thereof include aliphatic hydrocarbons (pentane, n-hexane, n-octane, n-decane, decalin).
- Etc. halogenated aliphatic hydrocarbons (chloroform, dichloromethane, dichloroethane, carbon tetrachloride, etc.), aromatic hydrocarbons (benzene, nitrobenzene, toluene, o-xylene, m-xylene, p-xylene, mecitylene, etc.), ether (Diethyl ether, diisopropyl ether, tert-butyl methyl ether, tetrahydrofuran (THF), dioxane, 1,2-dimethoxyethane, 1,2-diethoxyethane, etc.), amide (N, N-dimethylformamide (DMF), N , N-dimethylacetamide, etc.), lactam and lactone (N-methylpyrrolidone, ⁇ -butyrolactone, etc.), urea derivatives (N, N-dimethylimidazolidinone, tetramethylurea, etc.
- preferred solvents are aliphatic hydrocarbons (pentane, n-hexane, n-octane, n-decane, decalin, etc.) and aromatic hydrocarbons (benzene, nitrobenzene, toluene, etc.) from the viewpoint of efficiently obtaining the desired product.
- aliphatic hydrocarbons penentane, n-hexane, n-octane, n-decane, decalin, etc.
- aromatic hydrocarbons benzene, nitrobenzene, toluene, etc.
- ether diethyl ether, diisopropyl ether, tert-butylmethyl ether, THF, dioxane, 1,2-dimethoxyethane, 1,2-diethoxyethane, etc.
- aromatic hydrocarbons benzene, nitrobenzene, toluene, o-xylene, m-xylene, p-xylene, mesitylene, etc.
- ethers diethyl ether, diisopropyl ether, tert-butyl methyl ether, THF, Dioxane, 1,2-dimethoxyethane, 1,2-diethoxyethane, etc.
- the charging ratio of the compound represented by the formula (15) to the compound represented by the formula (16-1) and the compound represented by the formula (16-2) is based on the compound represented by the formula (15).
- the total of the compound represented by the formula (16-1) and the compound represented by the formula (16-2) is preferably 2 to 6 equivalents, and more preferably 2 to 3 equivalents.
- the compound represented by the formula (16-1) and the compound represented by the formula (16-2) may be the same or different from each other.
- the reaction temperature is appropriately set in the range from the melting point to the boiling point of the solvent while considering the type and amount of the raw material compound and the catalyst to be used, but is usually about 0 to 200 ° C., preferably 0. ⁇ 50 ° C.
- the reaction time cannot be unconditionally specified because it varies depending on the raw material compound used, the reaction temperature, and the like, but it is usually about 1 to 24 hours.
- the second step is a step of reducing the intermediate represented by the formula (17) to obtain the intermediate represented by the formula (18).
- the reducing method include known methods such as catalytic hydrogenation and chemical reduction with a metal and an acid.
- catalytic hydrogenation When reduction is performed by catalytic hydrogenation, known catalysts such as palladium carbon, Raney nickel catalyst, platinum oxide, ruthenium carbon, rhodium carbon, and platinum carbon may be used.
- the conditions for catalytic hydrogenation include, for example, a hydrogen pressure of 1 to 10 atm, a reaction temperature of 20 to 100 ° C., and a reaction time of 1 to 48 hours.
- the third step is to react the intermediate represented by the formula (18) with the compound represented by the formula (19-1) and the compound represented by the formula (19-2). This is a step of synthesizing the fluorene derivative represented by (1).
- a base may be used in the third step.
- Examples of the base include those similar to those that can be used in the first step. Of these, triethylamine, pyridine, diisopropylethylamine and the like are preferable because they are particularly easy to handle.
- the reaction solvent is preferably an aprotic organic solvent, for example, N, N-dimethylformamide, N, N-dimethylacetamide, N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidinone, dimethyl sulfoxide, tetrahydrofuran, Examples thereof include dioxane.
- N, N-dimethylformamide, N, N-dimethylacetamide, tetrahydrofuran, dioxane, toluene, xylene, mesitylene and the like are preferable.
- the charging ratio of the intermediate represented by the formula (18) to the compound represented by the formula (19-1) and the compound represented by the formula (19-2) is the intermediate represented by the formula (18).
- the total of the compound represented by the formula (19-1) and the compound represented by the formula (19-2) is preferably 2 to 6 equivalents, and more preferably 2 to 3 equivalents.
- the compound represented by the formula (19-1) and the compound represented by the formula (19-2) may be the same as or different from each other.
- the reaction temperature is appropriately set in the range from the melting point to the boiling point of the solvent while considering the type and amount of the raw material compound and the catalyst to be used, but is usually about 0 to 200 ° C., preferably 0. ⁇ 50 ° C.
- the reaction time cannot be unconditionally specified because it varies depending on the raw material compound used, the reaction temperature, and the like, but it is usually about 1 to 24 hours.
- post-treatment can be performed according to a conventional method to obtain the desired fluorene derivative.
- the compound represented by the formula (19-1) and the compound represented by the formula (19-2) can be obtained by a known method or the availability of a commercially available product.
- the fluorene derivative of the present invention can be suitably used as a charge transporting substance, particularly as a hole transporting substance.
- charge transportability is synonymous with conductivity.
- a charge-transporting substance is a substance that has a charge-transporting property in itself. Further, the charge-transporting varnish itself may have a charge-transporting property, and the solid film obtained thereby may have a charge-transporting property.
- the charge-transporting varnish of the present invention contains a charge-transporting substance composed of the fluorene derivative and an organic solvent.
- the charge transporting substance may be used alone or in combination of two or more.
- Organic solvent a highly polar solvent capable of satisfactorily dissolving the fluorene derivative can be used.
- the fluorene derivative of the present invention can be dissolved in a solvent regardless of the polarity of the solvent.
- a low-polarity solvent may be used because it is superior in process compatibility to a high-polarity solvent.
- a low-polarity solvent is defined as having a relative permittivity of less than 7 at a frequency of 100 kHz
- a high-polarity solvent is defined as having a relative permittivity of 7 or more at a frequency of 100 kHz.
- low polar solvent examples include chlorine-based solvents such as chloroform and chlorobenzene; aromatic hydrocarbon-based solvents such as toluene, xylene, tetraline, cyclohexylbenzene and decylbenzene; 1-octanol, 1-nonanol, 1-decanol and the like.
- Alibo alcohol solvents such as tetrahydrofuran, dioxane, anisole, 4-methoxytoluene, 3-phenoxytoluene, dibenzyl ether, diethylene glycol dimethyl ether, diethylene glycol butyl methyl ether, triethylene glycol dimethyl ether, triethylene glycol butyl methyl ether, etc.
- Solvents methyl benzoate, ethyl benzoate, butyl benzoate, isoamyl benzoate, bis (2-ethylhexyl) phthalate, dibutyl maleate, dibutyl oxalate, hexyl acetate, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, etc. Examples thereof include ester solvents.
- Examples of the highly polar solvent include amides such as N, N-dimethylformamide, N, N-dimethylacetamide, N, N-dimethylisobutylamide, N-methylpyrrolidone, and 1,3-dimethyl-2-imidazolidinone.
- Ketone solvent such as ethyl methyl ketone, isophorone, cyclohexanone
- Cyano solvent such as acetonitrile and 3-methoxypropionitrile
- Ethylene glycol diethylene glycol, triethylene glycol, dipropylene glycol, 1,3-butanediol
- Polyhydric alcohol solvents such as 2,3-butanediol
- Monovalent alcohol-based solvents other than aliphatic alcohols such as phenoxybenzyl alcohol and tetrahydrofurfuryl alcohol
- sulfoxide-based solvents such as dimethyl sulfoxide, and the like can be mentioned.
- the amount of the solvent used is such that the solid content concentration in the varnish of the present invention is usually about 0.1 to 20% by mass, preferably from the viewpoint of ensuring a sufficient film thickness while suppressing the precipitation of the charge transporting substance.
- the amount is 0.5 to 10% by mass.
- the solid content as used herein means a component other than the solvent among the components contained in the varnish.
- the solvent may be used alone or in combination of two or more.
- the charge-transporting varnish of the present invention may contain a dopant for the purpose of improving the charge-transporting property of the thin film obtained from the charge-transporting varnish of the present invention.
- the dopant is not particularly limited as long as it is soluble in at least one solvent used in the composition, and either an inorganic dopant or an organic dopant can be used.
- the dopant first develops its function as a dopant by removing a part of the molecule due to an external stimulus such as heating at the time of firing. It may be a substance that improves, for example, an aryl sulfonic acid ester compound protected by a group in which a sulfonic acid group is easily eliminated.
- Heteropolyacid is preferable as the inorganic dopant, and specific examples thereof include phosphomolybdic acid, silicate molybdic acid, phosphotungstic acid, phosphotungstic acid, and silicate tungstic acid.
- the heteropolyacid has a structure in which the hetero atom is located at the center of the molecule, which is typically represented by a Keggin type represented by the following formula (HPA1) or a Dawson type chemical structure represented by the following formula (HPA2).
- HPA1 Keggin type represented by the following formula
- HPA2 Dawson type chemical structure represented by the following formula
- Oxygen acids of such dissimilar elements mainly include oxygen acids of silicon (Si), phosphorus (P), and arsenic (As).
- heteropolyacid examples include phosphomolybdic acid, silicate molybdic acid, phosphotungstic acid, silicate tungstic acid, and phosphotungstic acid. These may be used individually by 1 type or in combination of 2 or more type.
- the heteropolyacid used in the present invention is available as a commercially available product, and can also be synthesized by a known method.
- the one kind of heteropolyacid is preferably phosphotungstic acid or phosphomolybdic acid, and phosphotungstic acid is most suitable.
- one of the two or more kinds of heteropolyacids is preferably phosphotungstic acid or phosphomolybdic acid, and more preferably phosphotungstic acid.
- heteropolyacids are those obtained as commercial products or known synthetics even if the number of elements is large or small from the structure represented by the general formula. As long as it is properly synthesized according to the method, it can be used in the present invention.
- phosphotungsten acid is generally represented by the chemical formulas H 3 (PW 12 O 40 ) and nH 2 O
- phosphomolybdic acid is generally represented by the chemical formulas H 3 (PMo 12 O 40 ) and nH 2 O.
- P (phosphorus), O (oxygen) or W (tungsten) or Mo (molybdenum) in this formula is large or small, it is obtained as a commercial product, or As long as it is appropriately synthesized according to a known synthesis method, it can be used in the present invention.
- the mass of the heteropolyacid defined in the present invention is not the mass of pure phosphotungstic acid (phosphotungstic acid content) in the synthetic product or the commercially available product, but the form available as the commercially available product and the known synthesis. In a form that can be isolated by the method, it means the total mass in a state containing hydrated water and other impurities.
- organic dopant examples include aryl sulfonic acid, aryl sulfonic acid ester, an ionic compound composed of a predetermined anion and its counter cation, a tetracyanoquinodimethane derivative, a benzoquinone derivative and the like.
- the aryl sulfonic acid compound is preferably represented by the following formula (A) or (B) from the viewpoint of the transparency of the thin film obtained from the charge transporting varnish of the present invention.
- a 1 is -O- or -S-, but -O- is preferable.
- a 2 is a (p 2 + 1) -valent group derived from naphthalene or anthracene (ie, a group obtained by removing p 2 + 1 hydrogen atoms from naphthalene or anthracene), but is derived from naphthalene. A group is preferred.
- a 3 is a 2- to 4-valent perfluorobiphenyl group.
- p 1 is the number of bonds between A 1 and A 3, and is an integer satisfying 2 ⁇ p 1 ⁇ 4, but A 3 is a divalent perfluorobiphenyl group and p 1 is 2. Is preferable.
- p 2 is the number of sulfonic acid groups bonded to A 2 , and is an integer satisfying 1 ⁇ p 2 ⁇ 4, but 2 is preferable.
- a 4 to A 8 are independently hydrogen atom, halogen atom, cyano group, alkyl group having 1 to 20 carbon atoms, alkyl halide group having 1 to 20 carbon atoms or 2 to 2 carbon atoms, respectively. There are 20 halogenated alkenyl groups, but at least 3 of A 4 to A 8 are halogen atoms.
- q is the number of sulfonic acid groups bonded to the naphthalene ring and is an integer satisfying 1 ⁇ q ⁇ 4, but 2 to 4 is preferable, and 2 is more preferable.
- alkyl halide group having 1 to 20 carbon atoms examples include a trifluoromethyl group, a 2,2,2-trifluoroethyl group, a perfluoroethyl group, and a 3,3,3-trifluoropropyl group, 2,2, 3,3,3-Pentafluoropropyl group, perfluoropropyl group, 4,4,4-trifluorobutyl group, 3,3,4,4,4-pentafluorobutyl group, 2,2,3,3, Examples thereof include 4,4,4-heptafluorobutyl group and perfluorobutyl group.
- halogenated alkenyl group having 2 to 20 carbon atoms examples include a perfluoroethenyl group, a 1-perfluoropropenyl group, a perfluoroallyl group, a perfluorobutenyl group and the like.
- halogen atom examples include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is preferable.
- the alkyl group having 1 to 20 carbon atoms include the same ones as mentioned in the description of R A and R B of formula (6).
- a 4 to A 8 include hydrogen atom, halogen atom, cyano group, alkyl group having 1 to 10 carbon atoms, alkyl halide group having 1 to 10 carbon atoms, or alkenyl halide having 2 to 10 carbon atoms.
- a group it is preferable that at least three fluorine atoms of a 4 - a 8, a hydrogen atom, a fluorine atom, fluorinated cyano group, an alkyl group having 1 to 5 carbon atoms, 5 It is more preferably an alkyl group or a fluorinated alkenyl group having 2 to 5 carbon atoms, and at least 3 of A 4 to A 8 are fluorine atoms, and a hydrogen atom, a fluorine atom, a cyano group, and 1 to 1 carbon atoms.
- the perfluoroalkyl group is a group in which all the hydrogen atoms of the alkyl group are substituted with fluorine atoms
- the perfluoroalkyl group is a group in which all the hydrogen atoms of the alkenyl group are substituted with fluorine atoms.
- Suitable aryl sulfonic acids include, but are not limited to, those shown below.
- the aryl sulfonic acid ester compound As the aryl sulfonic acid ester compound, the aryl sulfonic acid ester compound disclosed in International Publication No. 2017/217455, International Publication No. 2017/217457, from the viewpoint of the transparency of the thin film obtained from the charge transport varnish of the present invention. Examples thereof include the aryl sulfonic acid ester compound disclosed in No. 2, the aryl sulfonic acid ester compound described in Japanese Patent Application No. 2017-243631 and the like.
- the aryl sulfonic acid ester compound is preferably represented by any of the following formulas (C) to (E).
- m is an integer satisfying 1 ⁇ m ⁇ 4, but 2 is preferable.
- n is an integer satisfying 1 ⁇ n ⁇ 4, but 2 is preferable.
- a 11 is an m-valent group derived from perfluorobiphenyl (ie, a group obtained by removing m fluorine atoms from perfluorobiphenyl).
- a 12 is —O— or —S—, but —O— is preferred.
- a 13 is a (n + 1) -valent group derived from naphthalene or anthracene (that is, a group obtained by removing n + 1 hydrogen atoms from naphthalene or anthracene), but a group derived from naphthalene is preferable.
- R s1 to R s4 are independently hydrogen atoms or linear or branched alkyl groups having 1 to 6 carbon atoms, and R s5 has 2 to 20 carbon atoms which may be substituted. It is a monovalent hydrocarbon group.
- the linear or branched alkyl group having 1 to 6 carbon atoms represented by R s1 to R s4 includes a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, and sec. -Butyl group, tert-butyl group, n-hexyl group and the like can be mentioned. Of these, an alkyl group having 1 to 3 carbon atoms is preferable.
- the monovalent hydrocarbon group having 2 to 20 carbon atoms represented by R s5 may be linear, branched or cyclic, and specific examples thereof include an ethyl group, an n-propyl group, an isopropyl group and n.
- -Alkyl groups such as butyl group, isobutyl group, sec-butyl group and tert-butyl group; aryl groups such as phenyl, naphthyl and phenanthryl groups can be mentioned.
- R s1 to R s4 is a linear alkyl group having 1 to 3 carbon atoms, and the rest is a hydrogen atom, or R s1 is a linear alkyl group having 1 to 3 carbon atoms. It is preferable that R s2 to R s4 are hydrogen atoms. In this case, the methyl group is preferable as the linear alkyl group having 1 to 3 carbon atoms. Further, as R s5 , a linear alkyl group or a phenyl group having 2 to 4 carbon atoms is preferable.
- a 14 is an m-valent hydrocarbon group having 6 to 20 carbon atoms containing one or more aromatic rings which may be substituted, and the hydrocarbon group may be one or more. It is a group obtained by removing m hydrogen atoms from a hydrocarbon compound having 6 to 20 carbon atoms containing an aromatic ring.
- the hydrocarbon compound include benzene, toluene, xylene, ethylbenzene, biphenyl, naphthalene, anthracene, phenanthrene and the like.
- a part or all of the hydrogen atom may be further substituted with a substituent, and such substituents include a fluorine atom, a chlorine atom and a bromine atom.
- substituents include a fluorine atom, a chlorine atom and a bromine atom.
- monovalent Examples thereof include a hydrocarbon group, an organooxy group, an organoamino group, an organosilyl group, an organothio group, an acyl group and a sulfo group.
- a 14 a group derived from benzene, biphenyl or the like is preferable.
- a 15 is —O— or —S—, but —O— is preferred.
- a 16 is an (n + 1) -valent aromatic hydrocarbon group having 6 to 20 carbon atoms, and this aromatic hydrocarbon group is the aroma of an aromatic hydrocarbon compound having 6 to 20 carbon atoms. It is a group obtained by removing (n + 1) hydrogen atoms from the ring.
- the aromatic hydrocarbon compound include benzene, toluene, xylene, biphenyl, naphthalene, anthracene, pyrene and the like. Among them, as A 16 , a group derived from naphthalene or anthracene is preferable, and a group derived from naphthalene is more preferable.
- R s6 and R s7 are independently hydrogen atoms or linear or branched monovalent aliphatic hydrocarbon groups, and R s8 is linear or branched. It is a monovalent aliphatic hydrocarbon group.
- the total number of carbon atoms of R s6 , R s7 and R s8 is 6 or more.
- the upper limit of the total number of carbon atoms of R s6 , R s7 and R s8 is not particularly limited, but is preferably 20 or less, and more preferably 10 or less.
- linear or branched monovalent aliphatic hydrocarbon group represented by R s6 , R s7 and R s8 include a methyl group, an ethyl group, an n-propyl group, an isopropyl group and an n-butyl group.
- R s6 is preferably a hydrogen atom
- R s7 and R s8 are each independently preferably an alkyl group having 1 to 6 carbon atoms.
- R s9 to R s13 are independently hydrogen atom, nitro group, cyano group, halogen atom, alkyl group having 1 to 10 carbon atoms, and alkyl halide group having 1 to 10 carbon atoms, respectively. Alternatively, it is a halogenated alkenyl group having 2 to 10 carbon atoms.
- the alkyl group having 1 to 10 carbon atoms represented by R s9 to R s13 may be linear, branched, or cyclic, and specific examples thereof include a methyl group, an ethyl group, an n-propyl group, and an isopropyl group.
- the alkyl halide group having 1 to 10 carbon atoms represented by R s9 to R s13 is particularly a group in which a part or all of the hydrogen atoms of the alkyl group having 1 to 10 carbon atoms are substituted with a halogen atom.
- a halogen atom such as a trifluoromethyl group, a 2,2,2-trifluoroethyl group, a 1,1,2,2,2-pentafluoroethyl group, a 3,3,3-trifluoropropyl group, and a 2,2.
- the halogenated alkenyl group having 2 to 10 carbon atoms represented by R s9 to R s13 is a group in which some or all of the hydrogen atoms of the alkenyl group having 2 to 10 carbon atoms are substituted with halogen atoms.
- Specific examples thereof include, but are not limited to, a perfluorovinyl group, a perfluoro-1-propenyl group, a perfluoro-2-propenyl group, a perfluoro-1-butenyl group, a perfluoro-2-butenyl group, and a perfluoro.
- -3-Butenyl group and the like can be mentioned.
- R s9 a nitro group, a cyano group, an alkyl halide group having 1 to 10 carbon atoms, and an alkenyl halide group having 2 to 10 carbon atoms are preferable, and a nitro group, a cyano group, and 1 to 4 carbon atoms are preferable.
- the alkyl halide group and the alkenyl halide group having 2 to 4 carbon atoms are more preferable, and the nitro group, the cyano group, the trifluoromethyl group and the perfluoropropenyl group are even more preferable.
- R s10 to R s13 a halogen atom is preferable, and a fluorine atom is more preferable.
- a 17 is -O-, -S- or -NH-, but -O- is preferable.
- a 18 is an (n + 1) -valent aromatic hydrocarbon group having 6 to 20 carbon atoms
- the aromatic hydrocarbon group is the aromatic of an aromatic hydrocarbon compound having 6 to 20 carbon atoms. It is a group obtained by removing (n + 1) hydrogen atoms from the ring.
- the aromatic hydrocarbon compound include benzene, toluene, xylene, biphenyl, naphthalene, anthracene, pyrene and the like.
- a 18 a group derived from naphthalene or anthracene is preferable, and a group derived from naphthalene is more preferable.
- R s14 to R s17 are independently hydrogen atoms or linear or branched monovalent aliphatic hydrocarbon groups having 1 to 20 carbon atoms.
- the monovalent aliphatic hydrocarbon group includes a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, a tert-butyl group, an n-pentyl group and a cyclopentyl group.
- Examples include alkenyl groups. Of these, an alkyl group having 1 to 20 carbon atoms is preferable, an alkyl group having 1 to 10 carbon atoms is more preferable, and an alkyl group having 1 to 8 carbon atoms is even more preferable.
- R s18 is a linear or branched monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms, or ⁇ OR s19 .
- R s19 is a monovalent hydrocarbon group having 2 to 20 carbon atoms which may be substituted.
- Examples of the linear or branched monovalent aliphatic hydrocarbon group having 1 to 20 carbon atoms represented by R s18 include those similar to those described in the description of R s14 to R s17 .
- R s18 is a monovalent aliphatic hydrocarbon group
- R s18 is preferably an alkyl group having 1 to 20 carbon atoms, more preferably an alkyl group having 1 to 10 carbon atoms, and an alkyl group having 1 to 8 carbon atoms. Even more preferable.
- R s19 As the monovalent hydrocarbon group having 2 to 20 carbon atoms represented by R s19 , in addition to the above-mentioned monovalent aliphatic hydrocarbon groups other than the methyl group, aryl groups such as phenyl, naphthyl and phenanthryl groups are used. Can be mentioned. Among these, R s19 is preferably a linear alkyl group or a phenyl group having 2 to 4 carbon atoms.
- Examples of the substituent that the monovalent hydrocarbon group may have include a fluorine atom, an alkoxy group having 1 to 4 carbon atoms, a nitro group, and a cyano group.
- Suitable aryl sulfonic acid ester compounds include, but are not limited to, those shown below.
- the ionic compound represented by the following formula (F) is preferable from the viewpoint of the transparency of the thin film obtained from the charge transporting varnish of the present invention.
- E is a Group 13 element of the long periodic table
- Ar 101 to Ar 104 are independently aryl groups having 6 to 20 carbon atoms or heteroaryls having 2 to 20 carbon atoms.
- a group such as a halogen atom such as a fluorine atom, a chlorine atom or a bromine atom, an acyl group having 2 to 12 carbon atoms such as a cyano group, a nitro group or an acetyl group, or a halogen having 1 to 10 carbon atoms such as a trifluoromethyl group. It may be substituted with an alkylated group.
- a boron atom, an aluminum atom and a gallium atom are preferable, and a boron atom is more preferable.
- the aryl group having 6 to 20 carbon atoms represented by Ar 101 to Ar 104 include the same aryl groups as those described in the description of Ar 1 and Ar 2 in the formula (1).
- the heteroaryl group having 2 to 20 carbon atoms represented by Ar 101 to Ar 104 include a 2-thienyl group, a 3-thienyl group, a 2-furanyl group, a 3-furanyl group, a 2-oxazolyl group and a 4-oxazolyl group.
- M + is an onium ion.
- the onium ion include iodonium ion, sulfonium ion, ammonium ion, phosphonium ion and the like, and iodonium ion represented by the following formula (G) is particularly preferable.
- R 101 and R 102 independently have an alkyl group having 1 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, an alkynyl group having 2 to 12 carbon atoms, and 6 to 20 carbon atoms, respectively.
- tetracyanoquinodimethane derivative examples include 7,7,8,8-tetracyanoquinodimethane (TCNQ) and 2-fluoro-7,7,8,8-tetracyanoquinodimethane, 2,5-difluoro.
- benzoquinone derivative examples include tetrachloro-1,4-benzoquinone (chloranil), 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ) and the like.
- the charge-transporting varnish of the present invention contains a dopant
- the content thereof varies depending on the type of dopant, the desired charge-transporting property, and the like, and therefore cannot be unconditionally defined.
- it is a mass ratio with respect to the charge-transporting substance 1. It is usually about 0.01 to 50, preferably about 0.1 to 10, and more preferably about 1.0 to 5.0.
- the charge-transporting varnish of the present invention may further contain an organic silane compound for the purpose of adjusting the film physical properties of the obtained charge-transporting thin film.
- organic silane compound examples include a dialkoxysilane compound, a trialkoxysilane compound, and a tetraalkoxysilane compound.
- a dialkoxysilane compound or a trialkoxysilane compound is preferable, and a trialkoxysilane compound is more preferable.
- the organic silane compound may be used alone or in combination of two or more.
- the organic silane compound When the organic silane compound is contained, its content is usually about 0.1 to 50% by mass with respect to the total mass of the charge-transporting substance and the dopant, but it suppresses a decrease in the charge-transporting property of the obtained thin film.
- it is intended to enhance the hole injection ability into a layer (for example, a hole transport layer or a light emitting layer) laminated on the opposite side of the anode so as to be in contact with the hole injection layer made of the charge transport thin film of the present invention. In consideration, it is preferably about 0.5 to 40% by mass, more preferably about 0.8 to 30% by mass, and even more preferably about 1 to 20% by mass.
- the method for preparing the charge transporting varnish is not particularly limited, and examples thereof include a method in which the fluorene derivative and, if necessary, a dopant and the like are added to the organic solvent in any order or at the same time.
- the fluorene derivative and, if necessary, a dopant or the like may be first dissolved in one solvent, and another solvent may be added thereto, and the mixed solvent of the plurality of organic solvents may be used.
- the fluorene derivative and, if necessary, a dopant or the like may be dissolved sequentially or simultaneously.
- the fluorene derivative and, if necessary, a dopant or the like are dissolved in an organic solvent, and then a filter or the like on the order of submicrometer is used. It is desirable to use and filter.
- the viscosity of the charge-transporting varnish of the present invention is usually 1 to 50 mPa ⁇ s at 25 ° C.
- the surface tension of the charge-transporting varnish of the present invention is usually 20 to 50 mN / m at 25 ° C.
- the viscosity is a value measured by a TVE-25 type viscometer manufactured by Toki Sangyo Co., Ltd.
- the surface tension is a value measured by an automatic surface tension meter CBVP-Z manufactured by Kyowa Interface Science Co., Ltd.
- the viscosity and surface tension of the varnish can be adjusted by changing the types of solvents described above, their ratios, the solid content concentration, and the like in consideration of various factors such as a desired film thickness.
- the charge-transporting thin film of the present invention can be formed by applying the charge-transporting varnish of the present invention on a substrate and firing it.
- varnish coating method examples include, but are not limited to, the dip method, spin coating method, transfer printing method, roll coating method, brush coating, inkjet method, spray method, slit coating method, and the like. It is preferable to adjust the viscosity and surface tension of the varnish according to the coating method.
- the firing atmosphere of the charge-transporting varnish after coating is not particularly limited, and it is possible to obtain a thin film having a uniform film-forming surface and high charge-transporting property not only in the air atmosphere but also in an inert gas such as nitrogen or in a vacuum. it can. Depending on the type of dopant used together, a thin film having charge transportability may be obtained with good reproducibility by firing the varnish in an air atmosphere.
- the firing temperature is appropriately set within the range of about 100 to 260 ° C. in consideration of the intended use of the obtained thin film, the degree of charge transportability applied to the obtained thin film, the type of solvent, the boiling point, etc., and the obtained thin film is obtained.
- it is preferably about 140 to 250 ° C., more preferably about 145 to 240 ° C., but the charge transporting varnish of the present invention has a good charge even at a low temperature of 200 ° C. or lower.
- a thin film having transportability can be obtained.
- a temperature change of two or more steps may be applied for the purpose of developing higher uniform film forming property or advancing the reaction on the substrate, and heating may be performed by, for example, a hot plate or the like. It may be carried out using an appropriate device such as an oven.
- the film thickness of the charge transporting thin film is not particularly limited, but is preferably 5 to 300 nm when used as a hole injection layer, a hole transport layer, or a hole transport layer of an organic EL element.
- a method of changing the film thickness there are methods such as changing the solid content concentration in the varnish and changing the amount of liquid on the substrate at the time of coating.
- the charge-transporting thin film of the present invention exhibits a refractive index of 1.6 or more and an extinction coefficient of 0.030 or less on average in the wavelength region of 400 to 800 nm, but in some embodiments, a refraction of 1.65 or more.
- the organic EL device of the present invention has a pair of electrodes, and has a functional layer made of the charge-transporting thin film of the present invention between these electrodes.
- Typical configurations of the organic EL element include, but are not limited to, the following (a) to (f).
- an electron block layer or the like may be provided between the light emitting layer and the anode, and a hole block layer or the like may be provided between the light emitting layer and the cathode.
- the hole injection layer, the hole transport layer or the hole injection transport layer may have a function as an electron block layer or the like, and the electron injection layer, the electron transport layer or the electron injection transport layer may serve as a hole block layer or the like. It may also have the functions of.
- an arbitrary functional layer can be provided between the layers.
- A Antenna / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode
- b anode / hole injection layer / hole transport layer / light emitting layer / electron injection transport layer / Cathode
- c Electron / hole injection transport layer / light emitting layer / electron transport layer / electron injection layer / cathode
- d anode / hole injection transport layer / light emitting layer / electron injection transport layer / cathode
- e anode / positive Hole injection layer / hole transport layer / light emitting layer / cathode
- f anode / hole injection transport layer / light emitting layer / cathode
- the "hole injection layer”, “hole transport layer” and “hole injection transport layer” are layers formed between the light emitting layer and the anode, and transport holes from the anode to the light emitting layer. It has a function. When only one layer of hole transporting material is provided between the light emitting layer and the anode, it is a "hole injection transport layer”, and there are two layers of hole transporting material between the light emitting layer and the anode. When more than one layer is provided, the layer close to the anode is the “hole injection layer” and the other layers are the “hole transport layer”.
- the hole injection (transport) layer a thin film having excellent not only hole acceptability from the anode but also hole injection property into the hole transport (emission) layer is used.
- the "electron injection layer”, “electron transport layer” and “electron transport layer” are layers formed between the light emitting layer and the cathode and have a function of transporting electrons from the cathode to the light emitting layer. Is. When only one layer of electron transporting material is provided between the light emitting layer and the cathode, it is an “electron injection transporting layer”, and two or more layers of electron transporting material are provided between the light emitting layer and the cathode. If so, the layer close to the cathode is the “electron injection layer” and the other layers are the “electron transport layer”.
- the "light emitting layer” is an organic layer having a light emitting function, and includes a host material and a dopant material when a doping system is adopted.
- the host material mainly has a function of promoting the recombination of electrons and holes and confining excitons in the light emitting layer, and the dopant material efficiently emits excitons obtained by the recombination. Has a function.
- the host material mainly has a function of confining excitons generated by the dopant in the light emitting layer.
- the charge transporting thin film of the present invention can be suitably used as a functional layer provided between the anode and the light emitting layer in an organic EL device, and can be used as a hole injection layer, a hole transport layer, or a hole injection transport layer. It can be used more preferably, and can be used even more preferably as a hole injection layer.
- the materials and manufacturing methods used when manufacturing an organic EL device using the charge transporting varnish of the present invention include, but are not limited to, the following.
- An example of a method for producing an organic EL device having a hole injection layer made of a charge transporting thin film obtained from the charge transporting varnish of the present invention is as follows. It is preferable that the electrodes are preliminarily cleaned with alcohol, pure water, or the like, or surface-treated with UV ozone treatment, oxygen-plasma treatment, or the like, as long as the electrodes are not adversely affected.
- a hole injection layer is formed on the anode substrate by the above method using the charge transporting varnish of the present invention. This is introduced into a vacuum vapor deposition apparatus, and a hole transport layer, a light emitting layer, an electron transport layer / hole block layer, an electron injection layer, and a cathode metal are sequentially vapor-deposited.
- a composition for forming a hole transport layer containing a hole transport polymer and a composition for forming a light emitting layer containing a light emitting polymer are used instead of forming the hole transport layer and the light emitting layer by vapor deposition in the method. These layers are formed by a wet process using. If necessary, an electron block layer may be provided between the light emitting layer and the hole transport layer.
- anode material examples include transparent electrodes typified by indium tin oxide (ITO) and indium zinc oxide (IZO), metals typified by aluminum, and metal anodes composed of alloys thereof. , A flattened product is preferable. Polythiophene derivatives and polyaniline derivatives having high charge transport properties can also be used. Examples of other metals constituting the metal anode include, but are not limited to, gold, silver, copper, indium, and alloys thereof.
- Examples of the material for forming the hole transport layer include (triphenylamine) dimer derivative, [(triphenylamine) dimer] spirodimer, and N, N'-bis (naphthalen-1-yl) -N, N'-.
- Examples of the material forming the light emitting layer include a metal complex such as an aluminum complex of 8-hydroxyquinoline, a metal complex of 10-hydroxybenzo [h] quinoline, a bisstyrylbenzene derivative, a bisstyryl arylene derivative, and (2-hydroxyphenyl).
- a metal complex such as an aluminum complex of 8-hydroxyquinoline, a metal complex of 10-hydroxybenzo [h] quinoline, a bisstyrylbenzene derivative, a bisstyryl arylene derivative, and (2-hydroxyphenyl).
- Low molecular weight luminescent materials such as benzothiazole metal complexes and silol derivatives; poly (p-phenylene vinylene), poly [2-methoxy-5- (2-ethylhexyloxy) -1,4-phenylene vinylene], poly (3- Alkylthiophene), a system in which a light emitting material and an electron transfer material are mixed with a polymer compound such as polyvinylcarbazole, and the like, but are not limited thereto.
- the light emitting layer When the light emitting layer is formed by vapor deposition, it may be co-deposited with a light emitting dopant, and the light emitting dopant may be a metal such as tris (2-phenylpyridine) iridium (III) (Ir (ppy) 3 ). Examples thereof include, but are not limited to, a complex, a naphthacene derivative such as rubrene, a quinacridone derivative, and a condensed polycyclic aromatic ring such as perylene.
- Examples of the material for forming the electron transport layer / whole block layer include, but are not limited to, an oxydiazole derivative, a triazole derivative, a phenanthroline derivative, a phenylquinoxaline derivative, a benzimidazole derivative, and a pyrimidine derivative.
- Examples of the material forming the electron injection layer include metal oxides such as lithium oxide (Li 2 O), magnesium oxide (Mg O), and alumina (Al 2 O 3 ), lithium fluoride (LiF), and sodium fluoride (NaF). ), But is not limited to these.
- cathode material examples include, but are not limited to, aluminum, magnesium-silver alloy, aluminum-lithium alloy, and the like.
- Examples of the material for forming the electron block layer include, but are not limited to, tris (phenylpyrazole) iridium and the like.
- hole-transporting polymer examples include poly [(9,9-dihexylfluorenyl-2,7-diyl) -co- (N, N'-bis ⁇ p-butylphenyl ⁇ -1,4-diamino).
- Phenylene poly [(9,9-dioctylfluorenyl-2,7-diyl) -co- (N, N'-bis ⁇ p-butylphenyl ⁇ -1,1'-biphenylene-4,4- Diamine)], poly [(9,9-bis ⁇ 1'-penten-5'-yl ⁇ fluorenyl-2,7-diyl) -co- (N, N'-bis ⁇ p-butylphenyl ⁇ -1, 4-Diaminophenylene)], poly [N, N'-bis (4-butylphenyl) -N, N'-bis (phenyl) -benzidine] -endcapped with polysilsesquioxane, poly [(9,, 9-didioctylfluorenyl-2,7-diyl) -co- (4,4'-(N- (p-butylphenyl)) diphenylamine)] and the like
- luminescent polymer examples include polyfluorene derivatives such as poly (9,9-dialkylfluorene) (PDAF) and poly (2-methoxy-5- (2'-ethylhexoxy) -1,4-phenylene vinylene) (MEH).
- PDAF poly (9,9-dialkylfluorene)
- MEH poly (2-methoxy-5- (2'-ethylhexoxy) -1,4-phenylene vinylene)
- -PPV polyphenylene vinylene derivatives
- PAT poly (3-alkylthiophene)
- PVCz polyvinylcarbazole
- the anode, cathode, and the material forming the layer formed between them differ depending on whether the element having the bottom emission structure or the top emission structure is manufactured. Therefore, the material is appropriately selected in consideration of this point. ..
- a transparent anode is used on the substrate side and light is extracted from the substrate side
- a reflective anode made of metal is used and the direction is opposite to that of the substrate.
- Light is extracted from a certain transparent electrode (cathode) side. Therefore, for example, regarding the anode material, a transparent anode such as ITO is used when manufacturing an element having a bottom emission structure, and a reflective anode such as Al / Nd is used when manufacturing an element having a top emission structure.
- the organic EL device of the present invention may be sealed together with a water catching agent or the like, if necessary, in accordance with a conventional method in order to prevent deterioration of characteristics.
- the charge transporting varnish of the present invention is suitably used for forming a functional layer of an organic EL element, but in addition, an organic photoelectric conversion element, an organic thin film solar cell, an organic perovskite photoelectric conversion element, and an organic integrated circuit , Organic field effect transistor, organic thin film, organic light emitting transistor, organic optical tester, organic photoreceiver, organic electric field extinguishing element, light emitting electronic chemical battery, quantum dot light emitting diode, quantum laser, organic laser diode and organic Plasmon light emitting device It can also be used to form a functional layer in an electronic device such as.
- EL element Multi-function vapor deposition equipment system C-E2L1G1-N manufactured by Choshu Sangyo Co., Ltd. (6) Measurement of brightness, etc. of EL element: Multi-channel IVL measuring device manufactured by EHC Co., Ltd. (7) Life measurement of EL element (luminance half-life measurement): Organic EL brightness manufactured by EHC Co., Ltd. Life evaluation system PEL-105S (8) Measurement of refractive index and extinction coefficient: J.A. Woolam Japan, multi-entry angle spectroscopic ellipsometer VASE
- the concentrate was added dropwise to 2-propanol (20 mL) and the suspension was stirred at room temperature. Filter, dry the filter, and obtain the desired fluorene derivative A (N, N'-(2,7-bis (4- (diphenylamino) phenyl-9H-fluorene-9,9-diyl) bis (4). , 1-Phenylene)) bis (1-naphthamide)) was obtained in an amount of 1.16 g (yield: 85%). The measurement results of 1 H-NMR are shown below.
- Example 1-2 Synthesis of fluorene derivative B The purpose is the same as in Example 1-1-3, except that benzoyl chloride (304 ⁇ L, 2.64 mmol) is used instead of 1-naphthoyl chloride. 1.07 g of fluorene derivative B (N, N'-(2,7-bis (4- (diphenylamino) phenyl-9H-fluorene-9,9-diyl) bis (4,1-phenylene)) bisbenzamide) Obtained (yield: 85%). The measurement results of 1 H-NMR are shown below.
- the target fluorene derivative C (N, N'-(((N, N'-(() is the same as in Example 1-1-3, except that Intermediate E (1.13 g, 1.36 mmol) is used instead of Intermediate C. Obtained 1.46 g of 2,7-bis (9-phenyl-9H-carbazole-3-yl) -9H-fluorene-9,9-diyl) bis (4,1-phenylene)) bis (1-naphthamide). (Yield: 94%). The measurement results of 1 H-NMR are shown below.
- intermediate A (0.57 g, 1 mmol), 9-phenylcarbazole-2-boronic acid (0.63 g, 2.2 mmol), potassium carbonate (0.55 g, 4 mmol), 1,4-dioxane ( 11 mL), ion-exchanged water (2.8 mL) and Pd (PPh 3 ) 4 (57.8 mg, 0.05 mmol) were added, and after nitrogen substitution, the mixture was stirred at 90 ° C. for 3 hours. After cooling to room temperature, ion-exchanged water (8.4 mL) was added to the reaction mixture, filtration was performed, and the filtrate was washed with ion-exchanged water (11 mL).
- Example 1-1 except that Intermediate G (0.9 g, 1.08 mmol) was used in place of Intermediate A and Benzoyl chloride (274 ⁇ L, 2.38 mmol) was used in place of 1-naphthoyl chloride.
- the target fluorene derivative D N, N'-((2,7-bis (9-phenyl-9H-carbazole-2-yl) -9H-fluorene-9,9-diyl) bis
- the measurement results of 1 H-NMR are shown below.
- the target fluorene derivative E (N, N'-) was used in the same manner as in Example 1-1-3, except that 2-tenoyl chloride (280 ⁇ L, 2.64 mmol) was used instead of 1-naphthoyl chloride. 1.02 g of (2,7-bis (4- (diphenylamino) phenyl-9H-fluorene-9,9-diyl) bis (4,1-phenylene)) bis (thiophene-2-carboxamide)) was obtained ( Yield: 80%). The measurement results of 1 H-NMR are shown below.
- the fluorene derivative F of interest was prepared in the same manner as in Example 1-1-3, except that benzo [b] thiophene-2-carbonyl chloride (517 mg, 2.64 mmol) was used instead of 1-naphthoyl chloride.
- N N'-(2,7-bis (4- (diphenylamino) phenyl-9H-fluorene-9,9-diyl) bis (4,1-phenylene)) bis (benzo [b] thiophene-2-carboxamide) )
- Yield: 83% The measurement results of 1 H-NMR are shown below.
- the charge-transporting thin film of the present invention had a high refractive index of 1.65 or more and a low extinction coefficient of 0.03 or less.
- the ITO substrate is a 25 mm ⁇ 25 mm ⁇ 0.7 t glass substrate in which ITO is patterned on the surface with a film thickness of 150 nm, and is an O 2 plasma cleaning device (150 W, 30 seconds) before use. ) was used to remove impurities on the surface.
- Example 4-1 The hole injection layer solution was applied onto an ITO substrate using a spin coater, then provisionally fired on a hot plate at 80 ° C. for 1 minute in an air atmosphere, and then main fired at 230 ° C. for 15 minutes. A hole injection layer (thickness 30 nm) was formed. Next, the charge-transporting varnish A2 was applied onto the hole injection layer using a spin coater, the solvent was removed by vacuum drying at room temperature, and the mixture was fired at 130 ° C. for 10 minutes in an air atmosphere to have a film thickness of 40 nm. Hole transport layer was formed. On this, an aluminum thin film of 80 nm was formed at 0.2 nm / sec using a vapor deposition apparatus (vacuum degree 1.0 ⁇ 10 -5 Pa) to prepare a hole-only element (HOD).
- a hole-only element HID
- Example 4-2 to 4-5 HOD was prepared in the same manner as in Example 4-1 except that the charge-transporting varnish A2 was replaced with the charge-transporting varnish B2, C2, E2 or F2.
- the thin film prepared from the charge-transporting varnish of the present invention showed good charge-transporting properties.
- Example 5-2 to 5-6 An SLD was prepared in the same manner as in Example 5-1 except that the charge-transporting varnishes B1, C1, D1, E1 or F1 were used instead of the charge-transporting varnish A1.
- the thin film prepared from the charge-transporting varnish of the present invention showed good charge-transporting properties.
- Example 6-2 to 6-5 HOD was prepared in the same manner as in Example 6-1 except that the charge-transporting varnishes B1, C1, E1 or F1 were used instead of the charge-transporting varnish A1.
- the thin film prepared from the charge-transporting varnish of the present invention showed good charge-transporting property.
- the light emitting layer host material NS60 and the light emitting layer dopant material Ir (ppy) 3 manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. were co-deposited.
- the vapor deposition rate was controlled so that the concentration of Ir (ppy) 3 was 6%, and 40 nm was laminated.
- a thin film of Alq 3 , lithium fluoride, and aluminum was sequentially laminated to prepare an organic EL device.
- the vapor deposition rate was 0.2 nm / sec for Alq 3 and aluminum, and 0.02 nm / sec for lithium fluoride, and the film thicknesses were 20 nm, 0.5 nm, and 80 nm, respectively.
- the organic EL element was sealed with a sealing substrate and then the characteristics were evaluated. Sealing was performed by the following procedure. In a nitrogen atmosphere with an oxygen concentration of 2 ppm or less and a dew point of -76 ° C or less, the organic EL element is placed between the sealing substrates, and the sealing substrate is an adhesive (Matsumura Oil Research Corp., Moresco Moisture Cut WB90US (P)). It was pasted together. At this time, a water trapping agent (HD-071010W-40 manufactured by Dynic Co., Ltd.) was housed in the sealing substrate together with the organic EL element. The bonded substrate was irradiated with UV light (wavelength: 365 nm, irradiation amount: 6,000 mJ / cm 2 ), and then annealed at 80 ° C. for 1 hour to cure the adhesive.
- UV light wavelength: 365 nm, irradiation amount: 6,000 mJ / cm 2
- Example 7-2 to 7-5 An organic EL device was produced in the same manner as in Example 7-1 except that the charge-transporting varnishes B1, C1, E1 or F1 were used instead of the charge-transporting varnish A1.
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Abstract
Description
1.下記式(1)で表されるフルオレン誘導体。
Ar1及びAr2は、それぞれ独立に、炭素数6~20のアリール基又は炭素数2~20のヘテロアリール基であり、シアノ基、塩素原子、臭素原子、ヨウ素原子、ニトロ基、炭素数1~20のアルキル基、炭素数3~20のシクロアルキル基、炭素数4~20のビシクロアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基又は炭素数1~20のアルコキシ基で置換されていてもよく;
Ar3及びAr4は、それぞれ独立に、下記式(8)~(11)のいずれかで表される基である。
R1は、水素原子、炭素数1~20のアルキル基、若しくはシアノ基、ニトロ基、ハロゲン原子、炭素数1~20のアルキル基若しくは炭素数1~20のハロゲン化アルキル基で置換されていてもよい炭素数6~20のアリール基、若しくは炭素数1~20のアルキル基若しくは炭素数1~20のハロゲン化アルキル基で置換されていてもよい炭素数6~20のヘテロアリール基、又は下記式(12)~(14)のいずれかで表される基であり、
R2~R52は、それぞれ独立に、水素原子、シアノ基、ニトロ基、ハロゲン原子、炭素数1~20のアルキル基又は炭素数1~20のハロゲン化アルキル基である。
DAは、各々のアリール基がそれぞれ独立に炭素数6~20のアリール基であるジアリールアミノ基であり、
R53~R76は、それぞれ独立に、水素原子、シアノ基、ニトロ基、ハロゲン原子、炭素数1~20のアルキル基又は炭素数1~20のハロゲン化アルキル基である。))]
2.Ar1及びAr2が、それぞれ独立に、フェニル基、1-ナフチル基若しくは2-ナフチル基、又は下記式(T1-1)~(T11-4)、式(F1-1)~(F4-4)、式(N1-1)~(N10-7)若しくは式(M1-1)~(M4-3)で表される基である1のフルオレン誘導体。
3.Ar1及びAr2が、同一の基である1又は2のフルオレン誘導体。
4.Z1及びZ2が、式(2)で表される基である1~3のいずれかのフルオレン誘導体。
5.R1が、フェニル基である1~4のいずれかのフルオレン誘導体。
6.R2~R76が、水素原子である1~5のいずれかのフルオレン誘導体。
7.1~6のいずれかのフルオレン誘導体からなる電荷輸送性物質。
8.7の電荷輸送性物質及び有機溶媒を含む電荷輸送性ワニス。
9.更に、ドーパントを含む8の電荷輸送性ワニス。
10.8又は9の電荷輸送性ワニスから得られる電荷輸送性薄膜。
11.10の電荷輸送性薄膜を備える有機EL素子。
12.式(15)で表される化合物と式(16-1)で表される化合物及び式(16-2)で表される化合物とを反応させて式(17)で表される中間体を得る工程、
式(17)で表される中間体を還元して式(18)で表される中間体を得る工程、及び
式(18)で表される中間体と式(19-1)で表されるハロゲン化物及び式(19-2)で表されるハロゲン化物とを反応させる工程
を含む下記式(1)で表されるフルオレン誘導体の製造方法。
1. 1. A fluorene derivative represented by the following formula (1).
Ar 1 and Ar 2 are independently an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms, and are a cyano group, a chlorine atom, a bromine atom, an iodine atom, a nitro group, and 1 carbon atom. Alkyl group of ~ 20, cycloalkyl group of 3 to 20 carbons, bicycloalkyl group of 4 to 20 carbons, alkoxy group of 2 to 20 carbons, alkynyl group of 2 to 20 carbons or alkynyl group of 1 to 20 carbons May be substituted with an alkoxy group;
Ar 3 and Ar 4 are groups represented by any of the following formulas (8) to (11) independently.
R 1 is substituted with a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or a cyano group, a nitro group, a halogen atom, an alkyl group having 1 to 20 carbon atoms or an alkyl halide group having 1 to 20 carbon atoms. A heteroaryl group having 6 to 20 carbon atoms, or a heteroaryl group having 6 to 20 carbon atoms which may be substituted with an alkyl group having 1 to 20 carbon atoms or an alkyl halide group having 1 to 20 carbon atoms, or the following. A group represented by any of the formulas (12) to (14).
R 2 to R 52 are independently hydrogen atoms, cyano groups, nitro groups, halogen atoms, alkyl groups having 1 to 20 carbon atoms, or alkyl halide groups having 1 to 20 carbon atoms.
D A is a diarylamino group each aryl group is independently C 6 -C 20 -aryl group,
R 53 to R 76 are independently hydrogen atoms, cyano groups, nitro groups, halogen atoms, alkyl groups having 1 to 20 carbon atoms, or alkyl halide groups having 1 to 20 carbon atoms. ))]
2. Ar 1 and Ar 2 are independently phenyl group, 1-naphthyl group or 2-naphthyl group, or the following formulas (T1-1) to (T11-4), formulas (F1-1) to (F4-4). ), The fluorene derivative of 1 which is a group represented by the formulas (N1-1) to (N10-7) or the formulas (M1-1) to (M4-3).
3. 3. A fluorene derivative of 1 or 2 in which Ar 1 and Ar 2 are the same group.
4. A fluorene derivative according to any one of 1 to 3, wherein Z 1 and Z 2 are groups represented by the formula (2).
5. A fluorene derivative in which R 1 is a phenyl group.
6. A fluorene derivative in which R 2 to R 76 is a hydrogen atom.
A charge-transporting substance comprising a fluorene derivative according to any one of 7.1 to 6.
A charge-transporting varnish containing a charge-transporting substance and an organic solvent of 8.7.
9. In addition, 8 charge transport varnishes containing dopants.
A charge transport thin film obtained from a charge transport varnish of 10.8 or 9.
An organic EL device including a charge transporting thin film of 11.10.
12. The compound represented by the formula (15) is reacted with the compound represented by the formula (16-1) and the compound represented by the formula (16-2) to obtain an intermediate represented by the formula (17). Process,
The step of reducing the intermediate represented by the formula (17) to obtain the intermediate represented by the formula (18), and the intermediate represented by the formula (18) and the intermediate represented by the formula (19-1). A method for producing a fluorene derivative represented by the following formula (1), which comprises a step of reacting a halide with a halide represented by the formula (19-2).
本発明のフルオレン誘導体は、下記式(1)で表されるものである。
The fluorene derivative of the present invention is represented by the following formula (1).
本発明のフルオレン誘導体は、下記スキームAに示される方法によって合成することができる。
The fluorene derivative of the present invention can be synthesized by the method shown in Scheme A below.
本発明のフルオレン誘導体は、電荷輸送性物質として、特に正孔輸送性物質として好適に使用できる。本発明において、電荷輸送性とは、導電性と同義である。電荷輸送性物質とは、それ自体に電荷輸送性があるものである。また、電荷輸送性ワニスとは、それ自体に電荷輸送性があるものでもよく、それにより得られる固形膜が電荷輸送性を有するものでもよい。 [Charge transporting substance]
The fluorene derivative of the present invention can be suitably used as a charge transporting substance, particularly as a hole transporting substance. In the present invention, charge transportability is synonymous with conductivity. A charge-transporting substance is a substance that has a charge-transporting property in itself. Further, the charge-transporting varnish itself may have a charge-transporting property, and the solid film obtained thereby may have a charge-transporting property.
本発明の電荷輸送性ワニスは、前記フルオレン誘導体からなる電荷輸送性物質及び有機溶媒を含むものである。前記電荷輸送性物質は、1種単独で又は2種以上を組み合わせて用いてもよい。 [Charge transport varnish]
The charge-transporting varnish of the present invention contains a charge-transporting substance composed of the fluorene derivative and an organic solvent. The charge transporting substance may be used alone or in combination of two or more.
前記有機溶媒としては、前記フルオレン誘導体を良好に溶解し得る高極性溶媒を用いることができる。本発明のフルオレン誘導体は、溶媒の極性を問わず、溶媒中に溶解することが可能である。また、必要に応じて、高極性溶媒よりもプロセス適合性に優れている点で低極性溶媒を用いてもよい。本発明において、低極性溶媒とは周波数100kHzでの比誘電率が7未満のものと定義し、高極性溶媒とは周波数100kHzでの比誘電率が7以上のものと定義する。 [Organic solvent]
As the organic solvent, a highly polar solvent capable of satisfactorily dissolving the fluorene derivative can be used. The fluorene derivative of the present invention can be dissolved in a solvent regardless of the polarity of the solvent. Further, if necessary, a low-polarity solvent may be used because it is superior in process compatibility to a high-polarity solvent. In the present invention, a low-polarity solvent is defined as having a relative permittivity of less than 7 at a frequency of 100 kHz, and a high-polarity solvent is defined as having a relative permittivity of 7 or more at a frequency of 100 kHz.
本発明の電荷輸送性ワニスは、本発明の電荷輸送性ワニスから得られる薄膜の電荷輸送性を向上させる等の目的で、ドーパントを含んでもよい。ドーパントとしては、組成物に使用する少なくとも1種の溶媒に溶解するものであれば特に限定されず、無機系のドーパント、有機系のドーパントのいずれも使用できる。更にドーパントは、組成物から固体膜である電荷輸送性薄膜を得る過程で、例えば、焼成時の加熱といった外部からの刺激によって、分子内の一部が外れることによってドーパントとしての機能が初めて発現又は向上するようになる物質、例えば、スルホン酸基が脱離しやすい基で保護されたアリールスルホン酸エステル化合物であってもよい。 [Dopant (charge-accepting dopant)]
The charge-transporting varnish of the present invention may contain a dopant for the purpose of improving the charge-transporting property of the thin film obtained from the charge-transporting varnish of the present invention. The dopant is not particularly limited as long as it is soluble in at least one solvent used in the composition, and either an inorganic dopant or an organic dopant can be used. Further, in the process of obtaining a charge-transporting thin film which is a solid film from the composition, the dopant first develops its function as a dopant by removing a part of the molecule due to an external stimulus such as heating at the time of firing. It may be a substance that improves, for example, an aryl sulfonic acid ester compound protected by a group in which a sulfonic acid group is easily eliminated.
本発明の電荷輸送性薄膜は、本発明の電荷輸送性ワニスを基材上に塗布し、焼成することで形成することができる。 [Charge transport thin film]
The charge-transporting thin film of the present invention can be formed by applying the charge-transporting varnish of the present invention on a substrate and firing it.
本発明の有機EL素子は、一対の電極を有し、これら電極の間に、本発明の電荷輸送性薄膜からなる機能層を有するものである。 [Organic EL element]
The organic EL device of the present invention has a pair of electrodes, and has a functional layer made of the charge-transporting thin film of the present invention between these electrodes.
(a)陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/電子注入層/陰極
(b)陽極/正孔注入層/正孔輸送層/発光層/電子注入輸送層/陰極
(c)陽極/正孔注入輸送層/発光層/電子輸送層/電子注入層/陰極
(d)陽極/正孔注入輸送層/発光層/電子注入輸送層/陰極
(e)陽極/正孔注入層/正孔輸送層/発光層/陰極
(f)陽極/正孔注入輸送層/発光層/陰極 Typical configurations of the organic EL element include, but are not limited to, the following (a) to (f). In the following configuration, if necessary, an electron block layer or the like may be provided between the light emitting layer and the anode, and a hole block layer or the like may be provided between the light emitting layer and the cathode. Further, the hole injection layer, the hole transport layer or the hole injection transport layer may have a function as an electron block layer or the like, and the electron injection layer, the electron transport layer or the electron injection transport layer may serve as a hole block layer or the like. It may also have the functions of. Further, if necessary, an arbitrary functional layer can be provided between the layers.
(A) Antenna / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode (b) anode / hole injection layer / hole transport layer / light emitting layer / electron injection transport layer / Cathode (c) Electron / hole injection transport layer / light emitting layer / electron transport layer / electron injection layer / cathode (d) anode / hole injection transport layer / light emitting layer / electron injection transport layer / cathode (e) anode / positive Hole injection layer / hole transport layer / light emitting layer / cathode (f) anode / hole injection transport layer / light emitting layer / cathode
(1)1H-NMR:ブルカー・バイオスピン(株)製、核磁気共鳴分光計AVANCE III HD 500MHz
(2)基板洗浄:長州産業(株)製、基板洗浄装置(減圧プラズマ方式)
(3)ワニスの塗布:ミカサ(株)製、スピンコーターMS-A100
(4)膜厚測定:(株)小坂研究所製、微細形状測定機サーフコーダET-4000
(5)EL素子の作製:長州産業(株)製、多機能蒸着装置システムC-E2L1G1-N
(6)EL素子の輝度等の測定:(株)イーエッチシー製、多チャンネルIVL測定装置
(7)EL素子の寿命測定(輝度半減期測定):(株)イーエッチシー製、有機EL輝度寿命評価システムPEL-105S
(8)屈折率及び消衰係数の測定:ジェー・エー・ウーラムジャパン製、多入社角分光エリプソメーターVASE Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited to the following Examples. The devices used are as follows.
(1) 1 H-NMR: Nuclear magnetic resonance spectrometer AVANCE III HD 500MHz manufactured by Bruker Biospin Co., Ltd.
(2) Substrate cleaning: Substrate cleaning equipment manufactured by Choshu Sangyo Co., Ltd. (decompression plasma method)
(3) Varnish application: Spin coater MS-A100 manufactured by Mikasa Co., Ltd.
(4) Film thickness measurement: Fine shape measuring machine surf coder ET-4000 manufactured by Kosaka Laboratory Co., Ltd.
(5) Manufacture of EL element: Multi-function vapor deposition equipment system C-E2L1G1-N manufactured by Choshu Sangyo Co., Ltd.
(6) Measurement of brightness, etc. of EL element: Multi-channel IVL measuring device manufactured by EHC Co., Ltd. (7) Life measurement of EL element (luminance half-life measurement): Organic EL brightness manufactured by EHC Co., Ltd. Life evaluation system PEL-105S
(8) Measurement of refractive index and extinction coefficient: J.A. Woolam Japan, multi-entry angle spectroscopic ellipsometer VASE
[実施例1-1-1]中間体Bの合成
1H-NMR(500MHz, DMSO-d6) δ[ppm]: 7.05-7.07(m, 16H), 7.26-7.33(m, 12H), 7.56-7.60(m, 10H), 7.62-7.74(m, 10H), 7.99-8.06(m, 6H), 8.13-8.15(m, 2H), 10.58(brs, 2H). Intermediate C (1 g, 1.2 mmol), THF (2 mL) and trimethylamine (368 μL, 2.64 mmol) were placed in a reaction vessel to carry out nitrogen substitution, and then 1-naphthoyl chloride (1-naphthoyl chloride) (cooled in an ice bath). 396 μL (2.6 mmol) was added dropwise. After completion of the dropping, the mixture was stirred at room temperature for 1 hour. Ion-exchanged water (25 mL) was added to the reaction mixture, and the mixture was extracted with ethyl acetate (25 mL). The extraction operation was performed three times. After drying the organic layer with anhydrous magnesium sulfate, the solvent was distilled off under reduced pressure. The concentrate was added dropwise to 2-propanol (20 mL) and the suspension was stirred at room temperature. Filter, dry the filter, and obtain the desired fluorene derivative A (N, N'-(2,7-bis (4- (diphenylamino) phenyl-9H-fluorene-9,9-diyl) bis (4). , 1-Phenylene)) bis (1-naphthamide)) was obtained in an amount of 1.16 g (yield: 85%). The measurement results of 1 H-NMR are shown below.
1 1 H-NMR (500MHz, DMSO-d6) δ [ppm]: 7.05-7.07 (m, 16H), 7.26-7.33 (m, 12H), 7.56-7.60 (m, 10H), 7.62-7.74 (m, 10H) ), 7.99-8.06 (m, 6H), 8.13-8.15 (m, 2H), 10.58 (brs, 2H).
1-ナフトイルクロリドのかわりにベンゾイルクロリド(304μL、2.64mmol)を用いた以外は、実施例1-1-3と同様の方法で目的とするフルオレン誘導体B(N,N'-(2,7-ビス(4-(ジフェニルアミノ)フェニル-9H-フルオレン-9,9-ジイル)ビス(4,1-フェニレン))ビスベンズアミド)を1.07g得た(収率:85%)。1H-NMRの測定結果を以下に示す。
1H-NMR(500MHz, DMSO-d6) δ[ppm]: 7.03-7.07(m, 16H), 7.24(d, J=8.5Hz, 4H), 7.29-7.33(m, 8H), 7.49-7.52(m, 4H), 7.55-7.61(m, 6H), 7.69-7.73(m, 8H), 7.90(dd, J=1.5Hz, 8.5Hz, 4H), 8.20(d, J=7.5Hz, 2H), 10.24(brs, 2H).
1 1 H-NMR (500MHz, DMSO-d6) δ [ppm]: 7.03-7.07 (m, 16H), 7.24 (d, J = 8.5Hz, 4H), 7.29-7.33 (m, 8H), 7.49-7.52 ( m, 4H), 7.55-7.61 (m, 6H), 7.69-7.73 (m, 8H), 7.90 (dd, J = 1.5Hz, 8.5Hz, 4H), 8.20 (d, J = 7.5Hz, 2H), 10.24 (brs, 2H).
[実施例1-3-1]中間体Dの合成
1H-NMR(500MHz, DMSO-d6) δ[ppm]: 7.32(t, J=7.0Hz, 2H), 7.39-7.41(m, 6H), 7.46(t, J=7.5Hz, 4H), 7.54-7.58(m, 8H), 7.65-7.72(m, 10H), 7.78-7.80(m, 6H), 7.91-7.99(m, 6H), 8.04 (d, J=8.5Hz, 2H), 8.12-8.15(m, 4H), 8.41 (d, J=8.0Hz, 2H), 8.65(s, 2H), 10.59(brs, 2H). The target fluorene derivative C (N, N'-(((N, N'-(() is the same as in Example 1-1-3, except that Intermediate E (1.13 g, 1.36 mmol) is used instead of Intermediate C. Obtained 1.46 g of 2,7-bis (9-phenyl-9H-carbazole-3-yl) -9H-fluorene-9,9-diyl) bis (4,1-phenylene)) bis (1-naphthamide). (Yield: 94%). The measurement results of 1 H-NMR are shown below.
1 1 H-NMR (500MHz, DMSO-d6) δ [ppm]: 7.32 (t, J = 7.0Hz, 2H), 7.39-7.41 (m, 6H), 7.46 (t, J = 7.5Hz, 4H), 7.54 -7.58 (m, 8H), 7.65-7.72 (m, 10H), 7.78-7.80 (m, 6H), 7.91-7.99 (m, 6H), 8.04 (d, J = 8.5Hz, 2H), 8.12-8.15 (m, 4H), 8.41 (d, J = 8.0Hz, 2H), 8.65 (s, 2H), 10.59 (brs, 2H).
[実施例1-4-1]中間体Fの合成
1H-NMR(500MHz, DMSO-d6) δ[ppm]: 7.26-7.32(m, 6H), 7.40-7.42(m, 4H), 7.43-7.59(m, 12H), 7.68-7.77(m, 16H), 7.93-7.94(m, 4H), 8.04 (d, J=7.5Hz, 2H), 8.27 (d, J=7.5Hz, 2H), 8.32(d, J=8.0Hz, 2H), 10.26(brs, 2H). Example 1-1-except that Intermediate G (0.9 g, 1.08 mmol) was used in place of Intermediate A and Benzoyl chloride (274 μL, 2.38 mmol) was used in place of 1-naphthoyl chloride. The target fluorene derivative D (N, N'-((2,7-bis (9-phenyl-9H-carbazole-2-yl) -9H-fluorene-9,9-diyl) bis) in the same manner as in 3. (4,1-phenylene)) bisbenzamide) was obtained in an amount of 0.86 g (yield: 69%). The measurement results of 1 H-NMR are shown below.
1 H-NMR (500MHz, DMSO-d6) δ [ppm]: 7.26-7.32 (m, 6H), 7.40-7.42 (m, 4H), 7.43-7.59 (m, 12H), 7.68-7.77 (m, 16H) ), 7.93-7.94 (m, 4H), 8.04 (d, J = 7.5Hz, 2H), 8.27 (d, J = 7.5Hz, 2H), 8.32 (d, J = 8.0Hz, 2H), 10.26 (brs) , 2H).
1H-NMR(500MHz, DMSO-d6) δ[ppm]: 7.02-7.07(m, 16H), 7.20(dd, J=4Hz, 4.5Hz, 2H), 7.23(d, J=9.0Hz, 4H), 7.30-7.33(m, 8H), 7.60(d, J=8.5Hz, 4H), 7.64(d, J=8.5Hz, 4H), 7.69(s, 2H), 7.72(d, J=8.0Hz, 2H), 7.83(d, J=5.0Hz, 2H), 7.97(d, J=3.5Hz, 2H), 8.01(d, J=8.5Hz, 2H), 10.21(brs, 2H). The target fluorene derivative E (N, N'-) was used in the same manner as in Example 1-1-3, except that 2-tenoyl chloride (280 μL, 2.64 mmol) was used instead of 1-naphthoyl chloride. 1.02 g of (2,7-bis (4- (diphenylamino) phenyl-9H-fluorene-9,9-diyl) bis (4,1-phenylene)) bis (thiophene-2-carboxamide)) was obtained ( Yield: 80%). The measurement results of 1 H-NMR are shown below.
1 H-NMR (500MHz, DMSO-d6) δ [ppm]: 7.02-7.07 (m, 16H), 7.20 (dd, J = 4Hz, 4.5Hz, 2H), 7.23 (d, J = 9.0Hz, 4H) , 7.30-7.33 (m, 8H), 7.60 (d, J = 8.5Hz, 4H), 7.64 (d, J = 8.5Hz, 4H), 7.69 (s, 2H), 7.72 (d, J = 8.0Hz, 2H), 7.83 (d, J = 5.0Hz, 2H), 7.97 (d, J = 3.5Hz, 2H), 8.01 (d, J = 8.5Hz, 2H), 10.21 (brs, 2H).
1H-NMR(500MHz, DMSO-d6) δ[ppm]: 7.03-7.07(m, 16H), 7.26-7.33(m, 12H), 7.44-7.50(m, 4H), 7.61(d, J=8.5Hz, 4H), 7.69-7.74(m, 8H), 7.99(d, J=7.5Hz, 2H), 8.03(dd, J=6.5Hz, 8.0Hz, 4H), 8.32(s, 2H), 10.51(brs, 2H). The fluorene derivative F of interest was prepared in the same manner as in Example 1-1-3, except that benzo [b] thiophene-2-carbonyl chloride (517 mg, 2.64 mmol) was used instead of 1-naphthoyl chloride. N, N'-(2,7-bis (4- (diphenylamino) phenyl-9H-fluorene-9,9-diyl) bis (4,1-phenylene)) bis (benzo [b] thiophene-2-carboxamide) )) Was obtained (yield: 83%). The measurement results of 1 H-NMR are shown below.
1 H-NMR (500MHz, DMSO-d6) δ [ppm]: 7.03-7.07 (m, 16H), 7.26-7.33 (m, 12H), 7.44-7.50 (m, 4H), 7.61 (d, J = 8.5) Hz, 4H), 7.69-7.74 (m, 8H), 7.99 (d, J = 7.5Hz, 2H), 8.03 (dd, J = 6.5Hz, 8.0Hz, 4H), 8.32 (s, 2H), 10.51 ( brs, 2H).
[実施例2-1]電荷輸送性ワニスA1の調製
フルオレン誘導体A(174mg)と国際公開第2017/217455号に記載された方法に従って合成した下記式で表されるアリールスルホン酸エステルA(0.189g)とを、トリエチレングリコールブチルメチルエーテル(2g)、安息香酸ブチル(4g)及びフタル酸ジメチル(4g)の混合溶媒に室温で攪拌して溶解させた。得られた溶液を孔径0.2μmのポリテトラフルオロエチレン(PTFE)製フィルターを用いてろ過し、電荷輸送性ワニスA1を得た。
フルオレン誘導体B(165mg)とアリールスルホン酸エステルA(0.198g)とを、トリエチレングリコールブチルメチルエーテル(2g)、安息香酸ブチル(4g)及びフタル酸ジメチル(4g)の混合溶媒に室温で攪拌して溶解させた。得られた溶液を、孔径0.2μmのPTFE製フィルターを用いてろ過し、電荷輸送性ワニスB1を得た。 [Example 2-2] Preparation of charge-transporting varnish B1 Fluolene derivative B (165 mg) and aryl sulfonic acid ester A (0.198 g) were mixed with triethylene glycol butyl methyl ether (2 g) and butyl benzoate (4 g). And dimethyl phthalate (4 g) were dissolved in a mixed solvent at room temperature with stirring. The obtained solution was filtered using a PTFE filter having a pore size of 0.2 μm to obtain a charge-transporting varnish B1.
フルオレン誘導体C(173mg)とアリールスルホン酸エステルA(0.190g)とを、トリエチレングリコールブチルメチルエーテル(2g)、安息香酸ブチル(4g)及びフタル酸ジメチル(4g)の混合溶媒に室温で攪拌して溶解させた。得られた溶液を、孔径0.2μmのPTFE製フィルターを用いてろ過し、電荷輸送性ワニスC1を得た。 [Example 2-3] Preparation of charge-transporting varnish C1 Fluolene derivative C (173 mg) and aryl sulfonic acid ester A (0.190 g) were mixed with triethylene glycol butyl methyl ether (2 g) and butyl benzoate (4 g). And dimethyl phthalate (4 g) were dissolved in a mixed solvent at room temperature with stirring. The obtained solution was filtered using a PTFE filter having a pore size of 0.2 μm to obtain a charge-transporting varnish C1.
フルオレン誘導体D(165mg)とアリールスルホン酸エステルA(0.198g)とを、トリエチレングリコールブチルメチルエーテル(2g)、安息香酸ブチル(4g)及びフタル酸ジメチル(4g)の混合溶媒に室温で攪拌して溶解させた。得られた溶液を、孔径0.2μmのPTFE製フィルターを用いてろ過し、電荷輸送性ワニスD1を得た。 [Example 2-4] Preparation of charge-transporting varnish D1 Fluolene derivative D (165 mg) and aryl sulfonic acid ester A (0.198 g) were mixed with triethylene glycol butyl methyl ether (2 g) and butyl benzoate (4 g). And dimethyl phthalate (4 g) were dissolved in a mixed solvent at room temperature with stirring. The obtained solution was filtered using a PTFE filter having a pore size of 0.2 μm to obtain a charge-transporting varnish D1.
フルオレン誘導体E(166mg)とアリールスルホン酸エステルA(0.197g)とを、トリエチレングリコールブチルメチルエーテル(2g)、安息香酸ブチル(4g)及びフタル酸ジメチル(4g)の混合溶媒に室温で攪拌して溶解させた。得られた溶液を、孔径0.2μmのPTFE製フィルターを用いてろ過し、電荷輸送性ワニスE1を得た。 [Example 2-5] Preparation of charge-transporting varnish E1 Fluolene derivative E (166 mg) and aryl sulfonic acid ester A (0.197 g) were mixed with triethylene glycol butyl methyl ether (2 g) and butyl benzoate (4 g). And dimethyl phthalate (4 g) were dissolved in a mixed solvent at room temperature with stirring. The obtained solution was filtered using a PTFE filter having a pore size of 0.2 μm to obtain a charge-transporting varnish E1.
フルオレン誘導体F(175mg)とアリールスルホン酸エステルA(0.188g)とを、トリエチレングリコールブチルメチルエーテル(2g)、安息香酸ブチル(4g)及びフタル酸ジメチル(4g)の混合溶媒に室温で攪拌して溶解させた。得られた溶液を、孔径0.2μmのPTFE製フィルターを用いてろ過し、電荷輸送性ワニスF1を得た。 [Example 2-6] Preparation of charge-transporting varnish F1 Fluolene derivative F (175 mg) and aryl sulfonic acid ester A (0.188 g) were mixed with triethylene glycol butyl methyl ether (2 g) and butyl benzoate (4 g). And dimethyl phthalate (4 g) were dissolved in a mixed solvent at room temperature with stirring. The obtained solution was filtered using a PTFE filter having a pore size of 0.2 μm to obtain a charge-transporting varnish F1.
フルオレン誘導体A(363mg)をトリエチレングリコールブチルメチルエーテル(2g)、安息香酸ブチル(4g)及びフタル酸ジメチル(4g)の混合溶媒に室温で攪拌して溶解させた。得られた溶液を、孔径0.2μmのPTFE製フィルターを用いてろ過し、電荷輸送性ワニスA2を得た。 [Example 2-7] Preparation of charge-transporting varnish A2 Fluorene derivative A (363 mg) is mixed with triethylene glycol butylmethyl ether (2 g), butyl benzoate (4 g) and dimethyl phthalate (4 g) at room temperature. It was stirred and dissolved. The obtained solution was filtered using a PTFE filter having a pore size of 0.2 μm to obtain a charge-transporting varnish A2.
フルオレン誘導体Aを、それぞれフルオレン誘導体B、C、E及びFに変更した以外は、実施例2-7と同様の方法で電荷輸送性ワニスB2、C2、E2及びF2を得た。 [Examples 2-8 to 2-12] Preparation of charge-transporting varnishes B2, C2, E2 and F2 Examples 2-7 except that the fluorene derivative A was changed to the fluorene derivatives B, C, E and F, respectively. Charge-transporting varnishes B2, C2, E2 and F2 were obtained in the same manner as in the above.
[実施例3-1~3-5]
電荷輸送性ワニスA1、B1、C1、E1及びF1を、それぞれスピンコーターを用いて石英基板に塗布した後、大気雰囲気下、120℃で1分間仮焼成し、次いで大気雰囲気下、200℃で15分間本焼成し、石英基板上に50nmの均一な薄膜を形成した。
得られた膜付き石英基板を用いて、波長400~800nmにおける可視域平均屈折率n及び可視域平均消衰係数kの測定を行った。結果を表1に示す。 [3] Evaluation of Refractive Index (n) and Extinction Coefficient (k) [Examples 3-1 to 3-5]
Charge-transporting varnishes A1, B1, C1, E1 and F1 are each applied to a quartz substrate using a spin coater, and then calcined at 120 ° C. for 1 minute in an air atmosphere, and then 15 at 200 ° C. This firing was carried out for a minute to form a uniform thin film of 50 nm on a quartz substrate.
Using the obtained quartz substrate with a film, the visible region average refractive index n and the visible region average extinction coefficient k at a wavelength of 400 to 800 nm were measured. The results are shown in Table 1.
以下の実施例において、ITO基板としては、ITOが表面上に膜厚150nmでパターニングされた25mm×25mm×0.7tのガラス基板であって、使用前にO2プラズマ洗浄装置(150W、30秒間)によって表面上の不純物を除去したものを使用した。 [4] Fabrication and characterization of hole-only elements (HOD) -1
In the following examples, the ITO substrate is a 25 mm × 25 mm × 0.7 t glass substrate in which ITO is patterned on the surface with a film thickness of 150 nm, and is an O 2 plasma cleaning device (150 W, 30 seconds) before use. ) Was used to remove impurities on the surface.
国際公開第2013/084664号記載の方法に従って合成した下記式(S1)で表されるアニリン誘導体0.137gと、国際公開第2006/025342号記載の方法に従って合成した式(S2)で表されるアリールスルホン酸0.271gとを、窒素雰囲気下で1,3-ジメチル-2-イミダゾリジノン6.7gに溶解させた。得られた溶液に、シクロヘキサノール10g及びプロピレングリコール3.3gを順次加えて攪拌し、正孔注入層溶液を調製した。
It is represented by 0.137 g of an aniline derivative represented by the following formula (S1) synthesized according to the method described in WO2013 / 084664 and the formula (S2) synthesized according to the method described in WO 2006/025432. 0.271 g of aryl sulfonic acid was dissolved in 6.7 g of 1,3-dimethyl-2-imidazolidinone under a nitrogen atmosphere. To the obtained solution, 10 g of cyclohexanol and 3.3 g of propylene glycol were sequentially added and stirred to prepare a hole injection layer solution.
前記正孔注入層溶液を、スピンコーターを用いてITO基板上に塗布した後、大気雰囲気下、ホットプレート上で80℃で1分間仮焼成をし、次いで230℃で15分間本焼成をし、正孔注入層(膜厚30nm)を形成した。次に、電荷輸送性ワニスA2を、スピンコーターを用いて正孔注入層上に塗布した後、常温の真空乾燥により溶媒を除去し、大気雰囲気下、130℃で10分間焼成し、膜厚40nmの正孔輸送層を形成した。この上に、蒸着装置(真空度1.0×10-5Pa)を用いて0.2nm/秒にて80nmのアルミニウム薄膜を形成し、ホールオンリー素子(HOD)を作製した。 [Example 4-1]
The hole injection layer solution was applied onto an ITO substrate using a spin coater, then provisionally fired on a hot plate at 80 ° C. for 1 minute in an air atmosphere, and then main fired at 230 ° C. for 15 minutes. A hole injection layer (thickness 30 nm) was formed. Next, the charge-transporting varnish A2 was applied onto the hole injection layer using a spin coater, the solvent was removed by vacuum drying at room temperature, and the mixture was fired at 130 ° C. for 10 minutes in an air atmosphere to have a film thickness of 40 nm. Hole transport layer was formed. On this, an aluminum thin film of 80 nm was formed at 0.2 nm / sec using a vapor deposition apparatus (vacuum degree 1.0 × 10 -5 Pa) to prepare a hole-only element (HOD).
電荷輸送性ワニスA2のかわりに電荷輸送性ワニスB2、C2、E2又はF2に変更した以外は、実施例4-1と同様の方法でHODを作製した。 [Examples 4-2 to 4-5]
HOD was prepared in the same manner as in Example 4-1 except that the charge-transporting varnish A2 was replaced with the charge-transporting varnish B2, C2, E2 or F2.
[実施例5-1]
電荷輸送性ワニスA1を、スピンコーターを用いてITO基板上に塗布した後、大気雰囲気下、120℃で1分間仮焼成をし、次いで200℃で15分間本焼成をし、正孔注入層(膜厚50nm)を形成した。この上に、蒸着装置(真空度1.0×10-5Pa)を用いて0.2nm/秒にて膜厚80nmのアルミニウム薄膜を形成し、単層素子(SLD)を作製した。 [5] Fabrication of Single-Layer Element (SLD) [Example 5-1]
After applying the charge-transporting varnish A1 on the ITO substrate using a spin coater, it is tentatively fired at 120 ° C. for 1 minute in an air atmosphere, and then main fired at 200 ° C. for 15 minutes to form a hole injection layer ( A film thickness of 50 nm) was formed. On this, an aluminum thin film having a film thickness of 80 nm was formed at 0.2 nm / sec using a vapor deposition apparatus (vacuum degree 1.0 × 10 -5 Pa) to prepare a single-layer element (SLD).
電荷輸送性ワニスA1のかわりに電荷輸送性ワニスB1、C1、D1、E1又はF1を用いた以外は、実施例5-1と同様の方法でSLDを作製した。 [Examples 5-2 to 5-6]
An SLD was prepared in the same manner as in Example 5-1 except that the charge-transporting varnishes B1, C1, D1, E1 or F1 were used instead of the charge-transporting varnish A1.
[実施例6-1]
電荷輸送性ワニスA1を、スピンコーターを用いてITO基板に塗布した後、大気雰囲気下、120℃で1分間仮焼成をし、次いで200℃で15分間本焼成をし、ITO基板上に50nmの薄膜を形成した。その上に、蒸着装置(真空度2.0×10-5Pa)を用いてα-NPD及びアルミニウムの薄膜を順次積層し、HODを作製した。蒸着は、蒸着レート0.2nm/秒の条件で行った。α-NPD及びアルミニウムの薄膜の膜厚は、それぞれ30nm及び80nmとした。 [6] Preparation of HOD and its evaluation-2
[Example 6-1]
After applying the charge-transporting varnish A1 to the ITO substrate using a spin coater, it is tentatively fired at 120 ° C. for 1 minute in an air atmosphere, then main fired at 200 ° C. for 15 minutes, and then fired on the ITO substrate at 50 nm. A thin film was formed. On top of this, a thin film of α-NPD and aluminum was sequentially laminated using a vapor deposition apparatus (vacuum degree 2.0 × 10 -5 Pa) to prepare a HOD. The vapor deposition was carried out under the condition of a vapor deposition rate of 0.2 nm / sec. The film thicknesses of the α-NPD and aluminum thin films were 30 nm and 80 nm, respectively.
電荷輸送性ワニスA1のかわりに電荷輸送性ワニスB1、C1、E1又はF1を用いた以外は、実施例6-1と同様の方法でHODを作製した。 [Examples 6-2 to 6-5]
HOD was prepared in the same manner as in Example 6-1 except that the charge-transporting varnishes B1, C1, E1 or F1 were used instead of the charge-transporting varnish A1.
[実施例7-1]
電荷輸送性ワニスA1を、スピンコーターを用いてITO基板に塗布した後、大気雰囲気下、120℃で1分間仮焼成をし、次いで200℃で15分間本焼成をし、ITO基板上に50nmの薄膜を形成した。
次いで、薄膜を形成したITO基板に対し、蒸着装置(真空度1.0×10-5Pa)を用いてα-NPDを0.2nm/秒にて30nm成膜した。次に、関東化学(株)製の電子ブロック材料HTEB-01を10nm成膜した。次いで、新日鉄住金化学(株)製の発光層ホスト材料NS60及び発光層ドーパント材料Ir(ppy)3を共蒸着した。共蒸着は、Ir(ppy)3の濃度が6%になるように蒸着レートをコントロールし、40nm積層させた。次いで、Alq3、フッ化リチウム及びアルミニウムの薄膜を順次積層して有機EL素子を作製した。この際、蒸着レートは、Alq3及びアルミニウムについては0.2nm/秒、フッ化リチウムについては0.02nm/秒の条件でそれぞれ行い、膜厚は、それぞれ20nm、0.5nm及び80nmとした。
なお、空気中の酸素、水等の影響による特性劣化を防止するため、有機EL素子は封止基板により封止した後、その特性を評価した。封止は、以下の手順で行った。酸素濃度2ppm以下、露点-76℃以下の窒素雰囲気中で、有機EL素子を封止基板の間に収め、封止基板を接着剤((株)MORESCO製、モレスコモイスチャーカットWB90US(P))により貼り合わせた。この際、捕水剤(ダイニック(株)製HD-071010W-40)を有機EL素子と共に封止基板内に収めた。貼り合わせた封止基板に対し、UV光を照射(波長:365nm、照射量:6,000mJ/cm2)した後、80℃で1時間、アニーリング処理して接着剤を硬化させた。 [7] Fabrication of organic EL device and evaluation of characteristics [Example 7-1]
After applying the charge-transporting varnish A1 to the ITO substrate using a spin coater, it is tentatively fired at 120 ° C. for 1 minute in an air atmosphere, then main fired at 200 ° C. for 15 minutes, and then fired on the ITO substrate at 50 nm. A thin film was formed.
Next, α-NPD was formed on the ITO substrate on which the thin film was formed at 0.2 nm / sec using a vapor deposition apparatus (vacuum degree 1.0 × 10 -5 Pa) at 30 nm. Next, a 10 nm film was formed on the electronic block material HTEB-01 manufactured by Kanto Chemical Co., Inc. Next, the light emitting layer host material NS60 and the light emitting layer dopant material Ir (ppy) 3 manufactured by Nippon Steel & Sumikin Chemical Co., Ltd. were co-deposited. For co-evaporation, the vapor deposition rate was controlled so that the concentration of Ir (ppy) 3 was 6%, and 40 nm was laminated. Next, a thin film of Alq 3 , lithium fluoride, and aluminum was sequentially laminated to prepare an organic EL device. At this time, the vapor deposition rate was 0.2 nm / sec for Alq 3 and aluminum, and 0.02 nm / sec for lithium fluoride, and the film thicknesses were 20 nm, 0.5 nm, and 80 nm, respectively.
In order to prevent deterioration of the characteristics due to the influence of oxygen, water, etc. in the air, the organic EL element was sealed with a sealing substrate and then the characteristics were evaluated. Sealing was performed by the following procedure. In a nitrogen atmosphere with an oxygen concentration of 2 ppm or less and a dew point of -76 ° C or less, the organic EL element is placed between the sealing substrates, and the sealing substrate is an adhesive (Matsumura Oil Research Corp., Moresco Moisture Cut WB90US (P)). It was pasted together. At this time, a water trapping agent (HD-071010W-40 manufactured by Dynic Co., Ltd.) was housed in the sealing substrate together with the organic EL element. The bonded substrate was irradiated with UV light (wavelength: 365 nm, irradiation amount: 6,000 mJ / cm 2 ), and then annealed at 80 ° C. for 1 hour to cure the adhesive.
電荷輸送性ワニスA1のかわりに電荷輸送性ワニスB1、C1、E1又はF1を用いた以外は、実施例7-1と同様の方法で有機EL素子を作製した。 [Examples 7-2 to 7-5]
An organic EL device was produced in the same manner as in Example 7-1 except that the charge-transporting varnishes B1, C1, E1 or F1 were used instead of the charge-transporting varnish A1.
Claims (12)
- 下記式(1)で表されるフルオレン誘導体。
Ar1及びAr2は、それぞれ独立に、炭素数6~20のアリール基又は炭素数2~20のヘテロアリール基であり、シアノ基、塩素原子、臭素原子、ヨウ素原子、ニトロ基、炭素数1~20のアルキル基、炭素数3~20のシクロアルキル基、炭素数4~20のビシクロアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基又は炭素数1~20のアルコキシ基で置換されていてもよく;
Ar3及びAr4は、それぞれ独立に、下記式(8)~(11)のいずれかで表される基である。
R1は、水素原子、炭素数1~20のアルキル基、若しくはシアノ基、ニトロ基、ハロゲン原子、炭素数1~20のアルキル基若しくは炭素数1~20のハロゲン化アルキル基で置換されていてもよい炭素数6~20のアリール基、若しくは炭素数1~20のアルキル基若しくは炭素数1~20のハロゲン化アルキル基で置換されていてもよい炭素数6~20のヘテロアリール基、又は下記式(12)~(14)のいずれかで表される基であり、
R2~R52は、それぞれ独立に、水素原子、シアノ基、ニトロ基、ハロゲン原子、炭素数1~20のアルキル基又は炭素数1~20のハロゲン化アルキル基である。
DAは、各々のアリール基がそれぞれ独立に炭素数6~20のアリール基であるジアリールアミノ基であり、
R53~R76は、それぞれ独立に、水素原子、シアノ基、ニトロ基、ハロゲン原子、炭素数1~20のアルキル基又は炭素数1~20のハロゲン化アルキル基である。))] A fluorene derivative represented by the following formula (1).
Ar 1 and Ar 2 are independently an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms, and are a cyano group, a chlorine atom, a bromine atom, an iodine atom, a nitro group, and 1 carbon atom. Alkyl group of ~ 20, cycloalkyl group of 3 to 20 carbons, bicycloalkyl group of 4 to 20 carbons, alkoxy group of 2 to 20 carbons, alkynyl group of 2 to 20 carbons or alkynyl group of 1 to 20 carbons May be substituted with an alkoxy group;
Ar 3 and Ar 4 are groups represented by any of the following formulas (8) to (11) independently.
R 1 is substituted with a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or a cyano group, a nitro group, a halogen atom, an alkyl group having 1 to 20 carbon atoms or an alkyl halide group having 1 to 20 carbon atoms. A heteroaryl group having 6 to 20 carbon atoms, or a heteroaryl group having 6 to 20 carbon atoms which may be substituted with an alkyl group having 1 to 20 carbon atoms or an alkyl halide group having 1 to 20 carbon atoms, or the following. A group represented by any of the formulas (12) to (14).
R 2 to R 52 are independently hydrogen atoms, cyano groups, nitro groups, halogen atoms, alkyl groups having 1 to 20 carbon atoms, or alkyl halide groups having 1 to 20 carbon atoms.
D A is a diarylamino group each aryl group is independently C 6 -C 20 -aryl group,
R 53 to R 76 are independently hydrogen atoms, cyano groups, nitro groups, halogen atoms, alkyl groups having 1 to 20 carbon atoms, or alkyl halide groups having 1 to 20 carbon atoms. ))] - Ar1及びAr2が、それぞれ独立に、フェニル基、1-ナフチル基若しくは2-ナフチル基、又は下記式(T1-1)~(T11-4)、式(F1-1)~(F4-4)、式(N1-1)~(N10-7)若しくは式(M1-1)~(M4-3)で表される基である請求項1記載のフルオレン誘導体。
- Ar1及びAr2が、同一の基である請求項1又は2記載のフルオレン誘導体。 The fluorene derivative according to claim 1 or 2, wherein Ar 1 and Ar 2 are the same group.
- Z1及びZ2が、式(2)で表される基である請求項1~3のいずれか1項記載のフルオレン誘導体。 The fluorene derivative according to any one of claims 1 to 3, wherein Z 1 and Z 2 are groups represented by the formula (2).
- R1が、フェニル基である請求項1~4のいずれか1項記載のフルオレン誘導体。 The fluorene derivative according to any one of claims 1 to 4, wherein R 1 is a phenyl group.
- R2~R76が、水素原子である請求項1~5のいずれか1項記載のフルオレン誘導体。 The fluorene derivative according to any one of claims 1 to 5, wherein R 2 to R 76 are hydrogen atoms.
- 請求項1~6のいずれか1項記載のフルオレン誘導体からなる電荷輸送性物質。 A charge-transporting substance composed of the fluorene derivative according to any one of claims 1 to 6.
- 請求項7記載の電荷輸送性物質及び有機溶媒を含む電荷輸送性ワニス。 A charge-transporting varnish containing the charge-transporting substance and an organic solvent according to claim 7.
- 更に、ドーパントを含む請求項8記載の電荷輸送性ワニス。 The charge transporting varnish according to claim 8, further comprising a dopant.
- 請求項8又は9記載の電荷輸送性ワニスから得られる電荷輸送性薄膜。 A charge-transporting thin film obtained from the charge-transporting varnish according to claim 8 or 9.
- 請求項10記載の電荷輸送性薄膜を備える有機エレクトロルミネッセンス素子。 The organic electroluminescence device including the charge transporting thin film according to claim 10.
- 式(15)で表される化合物と式(16-1)で表される化合物及び式(16-2)で表される化合物とを反応させて式(17)で表される中間体を得る工程、
式(17)で表される中間体を還元して式(18)で表される中間体を得る工程、及び
式(18)で表される中間体と式(19-1)で表されるハロゲン化物及び式(19-2)で表されるハロゲン化物とを反応させる工程
を含む下記式(1)で表されるフルオレン誘導体の製造方法。
Ar1及びAr2は、それぞれ独立に、炭素数6~20のアリール基又は炭素数2~20のヘテロアリール基であり、シアノ基、塩素原子、臭素原子、ヨウ素原子、ニトロ基、炭素数1~20のアルキル基、炭素数3~20のシクロアルキル基、炭素数4~20のビシクロアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基又は炭素数1~20のアルコキシ基で置換されていてもよく;
Ar3及びAr4は、それぞれ独立に、下記式(8)~(11)のいずれかで表される基であり;
R1は、水素原子、炭素数1~20のアルキル基、若しくはシアノ基、ニトロ基、ハロゲン原子、炭素数1~20のアルキル基若しくは炭素数1~20のハロゲン化アルキル基で置換されていてもよい炭素数6~20のアリール基、若しくは炭素数1~20のアルキル基若しくは炭素数1~20のハロゲン化アルキル基で置換されていてもよい炭素数6~20のヘテロアリール基、又は下記式(12)~(14)のいずれかで表される基であり、
R2~R52は、それぞれ独立に、水素原子、シアノ基、ニトロ基、ハロゲン原子、炭素数1~20のアルキル基又は炭素数1~20のハロゲン化アルキル基である。
DAは、各々のアリール基がそれぞれ独立に炭素数6~20のアリール基であるジアリールアミノ基であり、
R53~R76は、それぞれ独立に、水素原子、シアノ基、ニトロ基、ハロゲン原子、炭素数1~20のアルキル基又は炭素数1~20のハロゲン化アルキル基である。))
Xは、ハロゲン原子又は擬ハロゲン基である。] The compound represented by the formula (15) is reacted with the compound represented by the formula (16-1) and the compound represented by the formula (16-2) to obtain an intermediate represented by the formula (17). Process,
The step of reducing the intermediate represented by the formula (17) to obtain the intermediate represented by the formula (18), and the intermediate represented by the formula (18) and the intermediate represented by the formula (19-1). A method for producing a fluorene derivative represented by the following formula (1), which comprises a step of reacting a halide with a halide represented by the formula (19-2).
Ar 1 and Ar 2 are independently an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms, and are a cyano group, a chlorine atom, a bromine atom, an iodine atom, a nitro group, and 1 carbon atom. Alkyl group of ~ 20, cycloalkyl group of 3 to 20 carbons, bicycloalkyl group of 4 to 20 carbons, alkoxy group of 2 to 20 carbons, alkynyl group of 2 to 20 carbons or alkynyl group of 1 to 20 carbons May be substituted with an alkoxy group;
Ar 3 and Ar 4 are independently represented by any of the following formulas (8) to (11);
R 1 is substituted with a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or a cyano group, a nitro group, a halogen atom, an alkyl group having 1 to 20 carbon atoms or an alkyl halide group having 1 to 20 carbon atoms. A heteroaryl group having 6 to 20 carbon atoms, or a heteroaryl group having 6 to 20 carbon atoms which may be substituted with an alkyl group having 1 to 20 carbon atoms or an alkyl halide group having 1 to 20 carbon atoms, or the following. A group represented by any of the formulas (12) to (14).
R 2 to R 52 are independently hydrogen atoms, cyano groups, nitro groups, halogen atoms, alkyl groups having 1 to 20 carbon atoms, or alkyl halide groups having 1 to 20 carbon atoms.
D A is a diarylamino group each aryl group is independently C 6 -C 20 -aryl group,
R 53 to R 76 are independently hydrogen atoms, cyano groups, nitro groups, halogen atoms, alkyl groups having 1 to 20 carbon atoms, or alkyl halide groups having 1 to 20 carbon atoms. )))
X is a halogen atom or a pseudohalogen group. ]
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