WO2020001020A1 - 显示基板及其制备方法和显示装置 - Google Patents

显示基板及其制备方法和显示装置 Download PDF

Info

Publication number
WO2020001020A1
WO2020001020A1 PCT/CN2019/073406 CN2019073406W WO2020001020A1 WO 2020001020 A1 WO2020001020 A1 WO 2020001020A1 CN 2019073406 W CN2019073406 W CN 2019073406W WO 2020001020 A1 WO2020001020 A1 WO 2020001020A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
pixel
defining layer
layer
electrode
Prior art date
Application number
PCT/CN2019/073406
Other languages
English (en)
French (fr)
Inventor
崔颖
李伟
Original Assignee
京东方科技集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/621,933 priority Critical patent/US11362155B2/en
Publication of WO2020001020A1 publication Critical patent/WO2020001020A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment

Definitions

  • the present disclosure belongs to the field of display technology, and particularly relates to a display substrate, a manufacturing method thereof, and a display device.
  • OLED organic light-emitting diode
  • Embodiments of the present disclosure provide a display substrate, a manufacturing method thereof, and a display device.
  • Some embodiments of the present disclosure provide a display substrate, including:
  • a planarization pattern filled in the first receiving portion wherein a surface of the planarization pattern facing away from the substrate is flush with a surface of the first pixel defining layer facing away from the substrate;
  • a second pixel-defining layer located on a side of the flattening pattern facing away from the substrate, wherein a second accommodation is provided in the second pixel-defining layer along a stacking direction of the first pixel-defining layer and the substrate.
  • An orthographic projection of the second receiving portion on the substrate falls within an orthographic projection of the first receiving portion on the substrate;
  • An organic functional layer is provided in the second receiving portion.
  • the display substrate further includes a first electrode located between the planarization pattern and the organic functional layer, wherein the first electrode covers the planarization pattern.
  • a first planarization layer that is in contact with the first pixel-defining layer is further provided on a side of the first pixel-defining layer close to the substrate.
  • the orthographic projection of the first pixel-defining layer on the substrate falls within the orthographic projection of the first planarization layer on the substrate.
  • the display substrate further includes a second electrode on a side of the organic functional layer facing away from the substrate.
  • the display substrate includes an OLED substrate, the first electrode is a reflective electrode, and the second electrode is a transmissive electrode.
  • a thin film transistor is further provided between the substrate and the first pixel defining layer, wherein a region where the thin film transistor is located and the first electrode, the second electrode, and the organic The orthographic projection of the area where the functional layer is located on the substrate at least partially overlaps.
  • the first accommodating portion is a first via hole penetrating the first pixel defining layer along a stacking direction of the first pixel defining layer and the substrate.
  • the second receiving portion is a second via hole penetrating the second pixel defining layer along a stacking direction of the first pixel defining layer and the substrate.
  • a first planarization layer that is in contact with the first pixel-defining layer is further provided on a side of the first pixel-defining layer that is close to the substrate;
  • the thin film transistor includes a substrate that is located on the substrate.
  • a source electrode and a drain electrode located above the gate electrode the first electrode passes through the first pixel defining layer and the substrate along a stacking direction of the first pixel defining layer and the substrate.
  • a third via of the first planarization layer is connected to the drain.
  • Some embodiments of the present disclosure provide a display device including the display substrate provided according to any one of the above embodiments of the present disclosure.
  • Some embodiments of the present disclosure provide a method for preparing a display substrate, including the following steps:
  • first pixel-defining layer Forming a first pixel-defining layer on a substrate by a patterning process, wherein the first pixel-defining layer has a first accommodating portion;
  • a second pixel-defining layer is formed by a patterning process, wherein a second accommodating portion is disposed in the second pixel-defining layer along a stacking direction of the first pixel-defining layer and the substrate, and the second accommodating portion is in The orthographic projection on the substrate falls within the orthographic projection of the first receiving portion on the substrate;
  • An organic functional layer is formed in at least the second receiving portion.
  • the method before the step of forming the second pixel-defining layer, the method further includes the following steps:
  • a first electrode is formed on the planarization pattern, wherein the first electrode covers the planarization pattern.
  • the method before the step of forming the first pixel-defining layer, the method further includes the following steps:
  • a first planarization layer is formed on the substrate, wherein a side of the first pixel defining layer close to the substrate is in contact with the first planarization layer.
  • the step of forming a planarization pattern filled in the first receiving portion includes the following steps:
  • the second planarization layer is subjected to doctor coating to form a planarization pattern located only in the first accommodating portion.
  • the method further includes the following steps:
  • a second electrode is formed on a side of the organic functional layer facing away from the substrate.
  • the display substrate includes an OLED substrate; before the first pixel-defining layer is formed, the method further includes the following steps:
  • each layer structure including a thin film transistor on the substrate, wherein the area where the thin film transistor is located and the area where the first electrode, the second electrode, and the organic functional layer are located are orthographic projections on the substrate At least partially overlap.
  • the organic functional layer is formed by an inkjet printing technology.
  • the first receiving portion is formed by forming a first via hole penetrating the first pixel defining layer along a stacking direction of the first pixel defining layer and the substrate, and by forming The second accommodating portion is formed through a second via hole of the second pixel defining layer in a direction in which the first pixel defining layer and the substrate are stacked.
  • the method before the step of forming the first pixel-defining layer, the method further includes the following steps:
  • each layer structure including a thin film transistor on the substrate includes the following steps:
  • a third via of the chemical layer is connected to the drain.
  • FIG. 1 is a schematic structural diagram of a display substrate according to an embodiment of the present disclosure
  • FIG. 2 is a schematic diagram of a specific structure of a display substrate according to an embodiment of the present disclosure.
  • FIG. 3 is a flowchart of a method for manufacturing a display substrate according to an embodiment of the present disclosure.
  • the inventors of the present disclosure have found that although the inkjet printing technology has many of the advantages described above, it also has some disadvantages.
  • the driving element for example, a thin film transistor (TFT)
  • TFT thin film transistor
  • an organic functional layer for example, a light emitting layer, a hole injection layer, a hole transport layer, an electron injection layer, and / or an electron transport layer
  • the fluidity of the ink forming the organic function layer As a result, the lower portion of the bottom surface of the receiving portion where the organic functional layer will be formed in the pixel-defining layer, the ink material remains more, and the film layer of the formed organic functional layer is thicker; the organic-functional layer will be formed in the pixel-defining layer.
  • the higher part of the bottom surface of the accommodating portion has less ink retention, and the formed organic functional layer has a thin film layer. Therefore, when the OLED device is lit, the light emitted by the OLED device is very uneven. Therefore, it is desirable to provide a display substrate that improves the display uniformity of the display substrate, a method of manufacturing the same, and a display device.
  • the display substrate provided in an embodiment of the present disclosure may include an OLED substrate, or a display substrate with other types of display devices.
  • the display substrate is an OLED substrate for illustration. That is, the display device in the display substrate is an OLED device.
  • the OLED device can be divided into two structures according to the direction of light emission from the device: one is a bottom emission device, and the other is a top emission device. Since the light emitted by the top emission device is emitted from the top of the device, it is not affected by the driving element at the bottom of the device, which can effectively improve the aperture ratio and facilitate the integration of the device and the bottom driving circuit. At the same time, top emission devices also have many advantages such as improving device efficiency, narrowing the spectrum, and improving color purity. Therefore, in the following embodiments, an OLED device is used as an example for description. Of course, the OLED device in this embodiment may also be a bottom emission device.
  • the first electrode, the organic functional layer, and the second electrode of the OLED device are sequentially disposed on the substrate, the first electrode is a reflective electrode, and the second electrode is a transmissive electrode.
  • one of the first electrode and the second electrode is an anode, and the other is a cathode; for example, the OLED device is a top emission device, the first electrode is an anode, and the second electrode is a cathode.
  • the first electrode ie, the reflective electrode
  • the second electrode ie, the transmissive electrode
  • ITO indium tin oxide
  • the anode of an OLED device may be connected to the drain of a driving element (for example, a thin film transistor). Therefore, in order to facilitate the connection between the two, the first electrode can optionally be used as the anode of the OLED device, and the second electrode can be used as the cathode of the OLED device.
  • a driving element for example, a thin film transistor
  • first”, “second”, and the like used in the present disclosure do not indicate any order, quantity, or importance, but are only used to distinguish different components. Words such as “including” or “including” mean that the element or item appearing before the word encompasses the element or item appearing after the word and its equivalent without excluding other elements or items. "Up”, “down”, “left”, “right”, etc. are only used to indicate the relative position relationship in the drawing. When the position or orientation of the described object changes, the relative position relationship may also change accordingly.
  • an embodiment of the present disclosure provides a display substrate, which may be an OLED substrate.
  • the OLED substrate may include: a substrate 10; a first pixel-defining layer 1 on the substrate 10, wherein the first pixel-defining layer 1 has a first accommodating portion 11; for example, the first accommodating portion 11 may be disposed along the The stacking direction of the first pixel-defining layer 1 and the substrate 10 runs through the first pixel-defining layer 1.
  • the first accommodating portion 11 may be disposed in the form of a via (for example, a first via).
  • the second receiving portion 41 is on the substrate 10 Orthographic projection falls within the orthographic projection of the first accommodating portion 11 on the substrate 10, the second accommodating portion 41 exposes the anode 3; and an organic functional layer 7 provided in the second accommodating portion 41
  • the organic functional layer 7 is in contact with the anode 3 and is electrically connected to the anode 3.
  • at least a portion of the anode (ie, the first electrode or the reflective electrode) 3 that is in contact with the organic functional layer 7 has a uniform thickness and a flat upper and lower surface to ensure the organic function formed thereon.
  • the layer 7 has a uniform thickness.
  • a first accommodating portion (for example, a first via hole) 11 is provided at a position in the first pixel defining layer 1 corresponding to the region of the OLED device to be formed, and in the first accommodating portion 11 A planarization pattern 2 is formed, and the surface of the planarization pattern 2 facing away from the substrate 10 is flush with the surface of the first pixel defining layer 1 facing away from the substrate 10.
  • the upper surface of the planarization pattern 2 facing away from the substrate 10 is flat, and the first electrode formed on the planarization pattern 2 is also flat on the surface, so that a second pixel-defining layer is formed on the first electrode.
  • the organic functional layer 7 of the OLED device in the second accommodating portion 41 of 4 will also be flat and have a uniform thickness, so the problem of uneven light emission of each OLED device in the OLED substrate is effectively reduced or eliminated.
  • the first planarization layer 6 is generally formed on the entire upper surface of the substrate 10 and has a larger area, so the flatness of the upper surface is not high enough.
  • a planarization pattern 2 having a small area is formed on the first planarization layer 6 so that the upper surface of the planarization pattern has a sufficiently high flatness. Therefore, the organic functional layer 7 formed on the planarization pattern 2 has a uniform thickness, so that the light emitted from the display substrate has a uniform brightness.
  • the first accommodating portion 11 and the second accommodating portion 41 may be provided such that an area of an upper surface thereof is larger than an area of a lower surface thereof (ie, provided as an inverted trapezoid).
  • the orthographic projection of the second accommodating portion 41 on the substrate 10 may fall within the orthographic projection of the first accommodating portion 11 on the substrate 10 to ensure that the organic functional layer 7 formed in the second accommodating portion 41 is only flat
  • the upper surface of the pattern 2 is in contact without contacting the upper surface of the first pixel defining layer 1, so that the organic functional layer 7 has a more uniform thickness.
  • the anode 3 may at least partially cover the surface of the planarization pattern 2 facing away from the substrate 10. In some embodiments, the anode 3 can completely cover the surface of the planarization pattern 2 facing away from the substrate 10, so that the anode 3 can be fully electrically connected to the organic functional layer 7.
  • a side of the first pixel-defining layer 1 facing away from the anode 3 may further be provided with a first planarizing layer 6 in contact therewith.
  • the area of the first planarizing layer 6 formed on the substrate 10 is larger than the area of the first pixel defining layer 1, so that the orthographic projection of the first pixel defining layer 1 on the substrate falls into the first planarizing layer 6.
  • a driving element for example, the thin film transistor 5 shown in FIG. 1
  • a driving element is also formed between the substrate 10 and the OLED device. Therefore, before the OLED device is formed, the entire surface of the substrate 10 having the driving element is passed through a first flat surface.
  • the planarization layer 6 is subjected to a planarization process (for example, a leveling process) so that the planarization pattern 2 formed is flat and the planarization pattern 2 is not very thick, which contributes to the thinning of the display substrate.
  • the driving element of the display substrate may be the thin film transistor 5.
  • the thin film transistor 5 may include a gate 51 on the substrate 10 and a source 52 and a drain 53 above the gate 51.
  • the first electrode ie, the anode 3)
  • the first planarization layer 6 and the first pixel-defining layer 1 are provided with a third via hole 12 at a position corresponding to the drain electrode 53 of the thin film transistor 5, and the material of the anode 3 fills the third via hole 12.
  • the area where the thin film transistor 5 is located at least partially overlaps the area where the OLED device is located. Thereby, the pixel aperture ratio of the display substrate and the resolution of the display substrate can be effectively improved.
  • FIG. 2 another embodiment of the present disclosure provides another display substrate.
  • the structure between the substrate 10 and the second pixel defining layer 4 of the display substrate shown in FIG. 2 may be the same as the structure between the substrate 10 and the second pixel defining layer 4 of the display substrate shown in FIG. 1.
  • the display substrate may further include an organic functional layer 7 and a cathode 8 of at least the OLED device disposed in the second accommodating portion 41, and the cathode 8 is disposed on a side of the organic functional layer 7 facing away from the substrate 10.
  • the organic functional layer 7 and the cathode 8 may cover the entire upper surface of the second pixel defining layer 4.
  • the organic functional layer 7 may optionally include a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer which are sequentially disposed along a direction away from the substrate 10.
  • the anode 3 is in contact with the hole injection layer of the organic functional layer 7 and is electrically connected to the hole injection layer
  • the cathode 8 is in contact with the electron injection layer of the organic functional layer 7 and is electrically connected to the electron injection layer.
  • the organic functional layer 7 may include only a light emitting layer provided in the second receiving portion 41 and on the upper surface of the second pixel defining layer 4.
  • the OLED device may include an anode 3, a second pixel defining layer 4, an organic functional layer 7, and a cathode 8.
  • the pixel defining layer in the OLED substrate of this embodiment is not limited to two layers, that is, it is not limited to including only the first pixel defining layer 1 and the second pixel defining layer 4.
  • the surface of the planarization pattern 2 in the first accommodating portion 11 of the remaining pixel-defining layer 11 except the last layer of the pixel-defining layer which is sequentially disposed on the substrate away from the substrate 10 and the remaining pixel-defining layer may be flush.
  • the method for manufacturing the display substrate will be described below. With reference to the following description, the structure of the display substrate will be more clear.
  • An embodiment of the present disclosure provides a method for manufacturing a display substrate, which can be used to prepare the above-mentioned display substrate.
  • the following description is made by taking the display substrate as an OLED substrate as an example.
  • the patterning process may include only a photolithography process, and may also include a photolithography process and an etching step. At the same time, the patterning process may also include printing, inkjet, and other processes for forming a predetermined pattern.
  • the photolithography process refers to a process including forming a film, exposing, developing and the like, and forming a pattern by using a photoresist, a mask, an exposure machine, and the like. A corresponding patterning process may be selected according to the structure formed in the present disclosure.
  • the method for preparing an OLED substrate in this embodiment may specifically include the following steps S1 to S8.
  • Step S1 A driving element for driving each OLED device is formed on the substrate 10.
  • the driving element may include a thin film transistor 5 and the like.
  • the thin film transistor 5 may be a top gate type or a bottom gate type.
  • a bottom-gate thin film transistor 5 is shown in FIG. 5.
  • the thin film transistor 5 may include a gate 51, a source 52, and a drain 53 (as shown in FIG. 1), as described above with reference to FIG.
  • Step S2. A first planarization layer 6 is formed on the driving element.
  • the first planarization layer 6 may be formed by spin coating. At this time, the first planarization layer is leveled to complete the above-mentioned substrate 10, so that the film layer formed in the subsequent steps can be sufficiently flat. And it will not be very thick, which helps to reduce the thickness of the OLED substrate.
  • the material of the first planarization layer 6 may include at least one of an amide-based diene, a secondary amine-based diene, a secondary amine-based acrylate, and an isocyanate-containing acrylic monomer compound.
  • Step S3 A first pixel-defining layer 1 having a first accommodating portion (for example, a first via) 11 is formed on the first planarizing layer 6 by a patterning process, wherein the first pixel-defining layer 1 has a first One accommodation part 11.
  • a first accommodating portion for example, a first via
  • a plasma-enhanced chemical vapor deposition method may be used to deposit the entire layer structure of the first pixel defining layer 1, and thereafter
  • the first pixel defining layer 1 having the first accommodating portion 11 is formed by etching.
  • the position of the first accommodating portion 11 and the orthographic projection of the area where the thin film transistor 5 is located on the substrate 10 are at least partially overlapped, which is conducive to improving the pixel aperture ratio and the resolution of the display substrate.
  • the material of the first pixel defining layer 1 may be a material well known to those skilled in the art.
  • step S4 a planarization pattern 2 is formed in the first accommodating portion 11, so that the surface of the planarization pattern 2 facing away from the substrate 10 is flush with the surface of the first pixel defining layer 1 facing away from the substrate 10.
  • the second planarization layer can be formed in a specific leveling manner, and then the second planarization layer is subjected to doctor coating to form a planarization pattern 2 only in the first accommodating portion 11.
  • the material of the planarization pattern 2 may be the same as that of the first planarization layer 6.
  • a plasma-enhanced chemical vapor deposition method may also be used to form the second planarization layer.
  • a low-pressure chemical vapor deposition method may also be used to form the second planarization layer.
  • an atmospheric pressure chemical vapor deposition method may also be used to form the second planarization layer.
  • an electron cyclotron chemical vapor deposition method may also be used to form the second planarization layer.
  • Step S5 Form a third via hole 12 penetrating the first planarization layer 6 and the first pixel definition layer 1 along the stacking direction of the first pixel definition layer 1 and the substrate 10.
  • the anode 3 of the OLED device is formed through a patterning process, so that the anode 3 is connected to the drain 53 of the thin film transistor 5 through the third via 12, and the anode 3 of the formed OLED device covers the planarization pattern 2.
  • at least a portion of the anode 3 covering the planarization pattern 2 has a uniform thickness and flat upper and lower surfaces.
  • Step S6 A second pixel-defining layer 4 is formed on the first pixel-defining layer 1 and the planarization pattern 2 by a patterning process.
  • the second pixel-defining layer 4 has a second receiving portion (for example, a second via hole) 41. .
  • the second accommodating portion 41 is provided corresponding to the first accommodating portion 11. For example, the orthographic projection of the second accommodating portion 41 on the substrate 10 falls into the orthographic projection of the first accommodating portion 11 on the substrate 10. Within, and the second accommodating portion 41 exposes the anode 3.
  • the process of forming the second pixel-defining layer 4 in this step may be the same as the process of forming the first pixel-defining layer 1, and the description is not repeated here.
  • the second pixel defining layer 4 is made thicker, it can also be made by a coating process.
  • an organic functional layer 7 of the OLED device may be formed in the second accommodating portion 41 and / or on the second pixel defining layer 4 by inkjet printing.
  • the present disclosure is not limited to forming the organic functional layer 7 by means of inkjet printing.
  • the organic functional layer 7 optionally includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer, which are sequentially disposed along a direction away from the substrate 10.
  • the organic functional layer 7 may include only a light emitting layer.
  • the surface of the planarization pattern 2 is flat, the surface of the anode 3 formed in step S5 is also flat. Therefore, the organic functional layer 7 formed in this step S7 is also flat, thereby effectively improving the display. The problem of uneven light emission on the substrate.
  • the organic functional layer 7 formed in step S7 may not only be located in the second accommodating portion 41, but may also cover the second accommodating portion 41 located in the same row or column, or may be covered. How to prepare the organic functional layer 7 of the second accommodating portion 41 in the entire display substrate can be determined according to the specific situation of the display substrate.
  • Step S8 On the organic functional layer 7, a cathode 8 of each OLED device may be formed by evaporation.
  • the optional cathode 8 of each OLED device is prepared as an integrated structure, which facilitates the control of the cathode 8 and simplifies the process.
  • the area where the driving element for example, the thin film transistor 5
  • the orthographic projection of the region where the device is located on the substrate 10 is at least partially overlapped, or even completely overlapped, so the aperture ratio of the display substrate can be provided.
  • a first accommodating portion 11 is formed at a position corresponding to a region of the OLED device to be formed in the first pixel defining layer 1, and the first accommodating portion 11 is filled with a planarization pattern 2, and the planarization pattern 2 faces away from the substrate 10. The surface is flush with the surface of the first pixel-defining layer 1 facing away from the substrate 10.
  • the first electrode formed on the planarization pattern 2 also has a flat surface.
  • the organic functional layer 7 of the OLED device formed in the second accommodating portion 41 will be flat, so the problem of uneven light emission of each OLED device in the display substrate is effectively reduced or eliminated.
  • An embodiment of the present disclosure provides a display device, which may include the display substrate shown in FIG. 1 or FIG. 2 described above.
  • the display device may be a liquid crystal display device or an electroluminescent display device, such as a liquid crystal panel, electronic paper, OLED panel, mobile phone, tablet computer, television, display, notebook computer, digital photo frame, navigator, etc. Product or part.
  • a liquid crystal display device or an electroluminescent display device, such as a liquid crystal panel, electronic paper, OLED panel, mobile phone, tablet computer, television, display, notebook computer, digital photo frame, navigator, etc. Product or part.
  • the light-emitting layer in the display device in this embodiment has a uniform thickness, so the display device has better display quality.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本公开提供一种显示基板及其制备方法和一种显示装置。所述显示基板包括：基底；位于所述基底上的第一像素限定层，其中，所述第一像素限定层中具有第一容纳部；填充于所述第一容纳部中的平坦化图案，其中，所述平坦化图案的背离所述基底的表面与所述第一像素限定层的背离所述基底的表面齐平；位于所述平坦化图案背离所述基底一侧的第二像素限定层，其中，所述第二像素限定层中沿着所述第一像素限定层和所述基底的堆叠方向贯穿设置第二容纳部，所述第二容纳部在所述基底上的正投影落入所述第一容纳部在所述基底上的正投影之内；以及有机功能层，其设置在所述第二容纳部中。

Description

显示基板及其制备方法和显示装置
相关申请的交叉引用
本公开要求于2018年6月25日提交的中国专利申请No.201810662016.7的优先权，所公开的内容以引用的方式合并于此。
技术领域
本公开属于显示技术领域，具体涉及一种显示基板及其制备方法和一种显示装置。
背景技术
在有机电致发光二极管(Organic light-emitting diode；OLED)制造领域，喷墨打印技术以其操作简单、成本低廉、工艺简单、易于实现大尺寸等优点而得到广泛应用。
发明内容
本公开的实施例提供了一种显示基板及其制备方法和一种显示装置。
本公开的一些实施例提供了一种显示基板，包括：
基底；
位于所述基底上的第一像素限定层，其中，所述第一像素限定层中具有第一容纳部；
填充于所述第一容纳部中的平坦化图案，其中，所述平坦化图案的背离所述基底的表面与所述第一像素限定层的背离所述基底的表面齐平；
位于所述平坦化图案背离所述基底一侧的第二像素限定层，其中，所述第二像素限定层中沿着所述第一像素限定层和所述基底的堆叠方向贯穿设置第二容纳部，所述第二容纳部在所述基底 上的正投影落入所述第一容纳部在所述基底上的正投影之内；以及
有机功能层，其设置在所述第二容纳部中。
在一个实施例中，所述显示基板还包括：位于所述平坦化图案和所述有机功能层之间的第一电极，其中，所述第一电极覆盖所述平坦化图案。
在一个实施例中，在所述第一像素限定层靠近所述基底的一侧还设置有与所述第一像素限定层接触的第一平坦化层。
在一个实施例中，所述第一像素限定层在所述基底上的正投影落入所述第一平坦化层在所述基底上的正投影之内。
在一个实施例中，所述显示基板还包括位于所述有机功能层背离所述基底一侧的第二电极。
在一个实施例中，所述显示基板包括OLED基板，所述第一电极为反射电极，所述第二电极为透射电极。
在一个实施例中，在所述基底和所述第一像素限定层之间还设置有薄膜晶体管，其中，所述薄膜晶体管所在区域与所述第一电极、所述第二电极和所述有机功能层所在区域在所述基底上的正投影至少部分重叠。
在一个实施例中，所述第一容纳部为沿着所述第一像素限定层和所述基底的堆叠方向贯穿所述第一像素限定层的第一过孔。
在一个实施例中，所述第二容纳部为沿着所述第一像素限定层和所述基底的堆叠方向贯穿所述第二像素限定层的第二过孔。
在一个实施例中，在所述第一像素限定层靠近所述基底的一侧还设置有与所述第一像素限定层接触的第一平坦化层；所述薄膜晶体管包括位于所述基底上的栅极以及位于所述栅极上方的源极和漏极，所述第一电极通过沿着所述第一像素限定层和所述基底的堆叠方向贯穿所述第一像素限定层和所述第一平坦化层的第三过孔连接至所述漏极。
本公开的一些实施例提供了一种显示装置，其包括根据本公开的上述实施例中的任一个所提供的显示基板。
本公开的一些实施例提供了一种制备显示基板的方法，包括以下步骤：
在基底上，通过构图工艺形成第一像素限定层，其中，所述第一像素限定层中具有第一容纳部；
形成填充于所述第一容纳部中的平坦化图案，其中，所述平坦化图案的背离所述基底的表面与所述第一像素限定层的背离所述基底的表面齐平；
通过构图工艺形成第二像素限定层，其中，所述第二像素限定层中沿着所述第一像素限定层和所述基底的堆叠方向贯穿设置第二容纳部，所述第二容纳部在所述基底上的正投影落入所述第一容纳部在所述基底上的正投影之内；以及
至少在所述第二容纳部中形成有机功能层。
在一个实施例中，在形成所述第二像素限定层的步骤之前，所述方法还包括以下步骤：
在所述平坦化图案上形成第一电极，其中，所述第一电极覆盖所述平坦化图案。
在一个实施例中，在所述形成第一像素限定层的步骤之前，所述方法还包括以下步骤：
在所述基底上形成第一平坦化层，其中，所述第一像素限定层靠近所述基底的一侧与所述第一平坦化层接触。
在一个实施例中，所述形成填充于所述第一容纳部中的平坦化图案的步骤包括以下步骤：
在所述第一像素限定层背离所述基底的一侧形成第二平坦化层；以及
对所述第二平坦化层进行刮涂，形成仅位于所述第一容纳部中的平坦化图案。
在一个实施例中，在所述至少在所述第二容纳部中形成有机功能层的步骤之后，所述方法还包括以下步骤：
在所述有机功能层背离所述基底的一侧形成第二电极。
在一个实施例中，所述显示基板包括OLED基板；在所述形 成第一像素限定层之前，所述方法还包括以下步骤：
在所述基底上形成包括薄膜晶体管的各层结构，其中，所述薄膜晶体管所在区域与所述第一电极、所述第二电极和所述有机功能层所在区域在所述基底上的正投影至少部分重叠。
在一个实施例中，所述有机功能层通过喷墨打印技术来形成。
在一个实施例中，通过形成沿着所述第一像素限定层和所述基底的堆叠方向贯穿所述第一像素限定层的第一过孔来形成所述第一容纳部，并且通过形成沿着所述第一像素限定层和所述基底的堆叠方向贯穿所述第二像素限定层的第二过孔来形成所述第二容纳部。
在一个实施例中，在所述形成第一像素限定层的步骤之前，所述方法还包括以下步骤：
在所述基底上形成第一平坦化层，其中，所述第一像素限定层靠近所述基底的一侧与所述第一平坦化层接触；以及
所述在所述基底上形成包括薄膜晶体管的各层结构的步骤包括以下步骤：
在所述基底上形成栅极；以及
在所述栅极上方形成源极和漏极，使得所述第一电极通过沿着所述第一像素限定层和所述基底的堆叠方向贯穿所述第一像素限定层和所述第一平坦化层的第三过孔连接至所述漏极。
附图说明
图1为根据本公开的一个实施例的显示基板的结构示意图；
图2为根据本公开的一个实施例的显示基板的具体结构示意图；以及
图3为本公开的一个实施例的显示基板的制备方法的流程图。
具体实施方式
为使本领域技术人员更好地理解本公开的技术方案，下面结 合附图和具体实施方式对本公开作进一步详细描述。
本公开的发明人发现，喷墨打印技术虽有上述诸多优点，但也存在一些缺点。例如，在采用喷墨打印技术制备顶发射OLED器件(即，从其顶部发出光的OLED器件)时，由于像素内的基板上设置有驱动元件(例如，薄膜晶体管(TFT))，将导致像素内的基板上的膜层结构的上表面不平整。当进行喷墨打印OLED器件的有机功能层(例如，发光层、空穴注入层、空穴传输层、电子注入层和/或电子传输层)时，由于形成有机功能层的墨水的流动性，导致在像素限定层内将形成有机功能层的容纳部的底表面中比较低的部分，墨水材料存留较多，所形成的有机功能层的膜层较厚；像素限定层内将形成有机功能层的容纳部的底表面中比较高的部分，墨水存留比较少，所形成的有机功能层的膜层较薄。从而使得当OLED器件点亮时，其所发出的光线非常不均。因此，期望提供一种提高显示基板的显示均一性的显示基板及其制备方法和一种显示装置。
在本公开的一个实施例中所提供的显示基板可以包括OLED基板，也可以是具有其它类型的显示器件的显示基板，而在以下实施例中是以显示基板为OLED基板为例进行说明的，也即显示基板中的显示器件为OLED器件。
在一个实施例中，OLED器件按照光从器件出射方向的不同，可以分为两种结构：一种是底发射型器件，另一种是顶发射型器件。由于顶发射型器件所发出的光是从器件的顶部出射，这就不受器件底部驱动元件的影响，从而能有效的提高开口率，有利于器件与底部驱动电路的集成。同时，顶发射型器件还具有提高器件效率、窄化光谱和提高色纯度等诸多方面的优点。因此，在以下实施例中以OLED器件为顶发射型器件为例进行说明。当然本实施例中OLED器件也可以是底发射型器件。
在一个实施例中，OLED器件的第一电极、有机功能层和第二电极依次设置在基底上，第一电极为反射电极，第二电极为透射电极。其中，对于第一电极和第二电极而言，其中一者为阳极， 另一者则为阴极；例如，OLED器件为顶发射型器件，第一电极为阳极，第二电极为阴极。在一个实施例中，第一电极(即，反射电极)可以由Ag、Mg、Al、Cu等具有高反射率的金属制成，第二电极(即，透射电极)可以由氧化铟锡(ITO)等具有高透射率的材料制成。
通常，OLED器件的阳极可以与驱动元件(例如，薄膜晶体管)的漏极连接。因此，为了方便二者连接，可选的将第一电极作为OLED器件的阳极，第二电极作为OLED器件的阴极。以下结合具体实施例对本公开的显示基板及其制备方法进行说明。
另外，本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组件。“包括”或者“包含”等类似的词语意指出现在该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“上”、“下”、“左”、“右”等仅用于表示附图中的相对位置关系，当被描述对象的位置或取向改变后，则该相对位置关系也可能相应地改变。
如图1所示，本公开的一个实施例提供一种显示基板，该显示基板可以为OLED基板。OLED基板可以包括：基底10；位于基底10上的第一像素限定层1，其中，第一像素限定层1中具有第一容纳部11，例如，第一容纳部11可以设置为沿着所述第一像素限定层1和所述基底10的堆叠方向贯穿第一像素限定层1，在一些实施例中，第一容纳部11可以以过孔(例如，第一过孔)的形式设置在第一像素限定层1中；填充于第一容纳部11中的平坦化图案2，其中，平坦化图案2的背离基底10表面与第一像素限定层1的背离基底10表面齐平；位于第一像素限定层1和平坦化图案2之上的OLED器件的阳极3，其中，阳极3覆盖平坦化图案2；位于OLED器件的阳极3所在层之上的第二像素限定层4，其中，第二像素限定层4中沿着所述第一像素限定层1和所述基底10的堆叠方向贯穿设置第二容纳部(第二过孔)41，第二容纳部41与第一容纳部11对应设置，例如，所述第二容纳部41在所 述基底10上的正投影落入所述第一容纳部11在所述基底10上的正投影之内，第二容纳部41使阳极3暴露出来；以及有机功能层7，其设置在第二容纳部41中，有机功能层7与阳极3接触并与阳极3电连接。在一个实施例中，阳极(即，第一电极或反射电极)3的至少与有机功能层7接触的部分具有均匀的厚度并且平坦的上表面和下表面，以保证形成在其上的有机功能层7具有均匀的厚度。由于采用顶发射型的OLED器件时，OLED基板的每个像素中的驱动元件(例如薄膜晶体管5)所在区域和OLED器件所在区域在基底10上的正投影通常是至少部分重叠的，甚至完全重叠，而在本实施例中将第一像素限定层1中与待形成的OLED器件的区域对应的位置设置有第一容纳部(例如，第一过孔)11，并在第一容纳部11中形成平坦化图案2，且该平坦化图案2背离基底10表面与第一像素限定层1的背离基底10表面齐平。因此，平坦化图案2背离基底10的上表面是平整的，在该平坦化图案2之上所形成的第一电极也是表面平整的，使得继而形成在第一电极之上的第二像素限定层4的第二容纳部41中的OLED器件的有机功能层7也将是平整的并具有均匀的厚度，故有效地减轻或消除了OLED基板中的各个OLED器件发光不均一的问题。
应当理解的是，第一平坦化层6一般形成在基底10的整个上表面上，具有较大的面积，因此其上表面的平坦度不够高。在本发明构思中，在第一平坦化层6上形成面积较小的平坦化图案2，使得平坦化图案的上表面具有足够高的平坦度。因此，形成在平坦化图案2上的有机功能层7具有均匀的厚度，从而使得所述显示基板发出的光具有均匀的亮度。
在一些实施例中，第一容纳部11和第二容纳部41可以设置为其上表面的面积大于其下表面的面积(即，设置为倒梯形)。并且，第二容纳部41在基底10上的正投影可以落入第一容纳部11在基底10上的正投影之内，以保证形成在第二容纳部41中的有机功能层7仅与平坦化图案2的上表面接触，而不与第一像素限定层1的上表面接触，从而使得有机功能层7具有更均匀的厚 度。
在一些实施例中，阳极3可以至少部分覆盖平坦化图案2的背离基底10表面。在一些实施例中，阳极3可以完全覆盖平坦化图案2的背离基底10表面，以使得阳极3可以与有机功能层7充分电连接。在本实施例中的显示基板中，在第一像素限定层1背离所述阳极3的一侧还可以设置有与其接触的第一平坦化层6。可选的，在基底10上所形成的第一平坦化层6的面积大于第一像素限定层1的面积，使得第一像素限定层1在基底上的正投影落入第一平坦化层6在基底10上的正投影之内。在基底10与OLED器件之间还形成有驱动元件(例如，图1中所示的薄膜晶体管5)，因此，在形成OLED器件之前先对具有驱动元件的基底10的整个表面，通过第一平坦化层6进行平坦化处理(例如，流平处理)，以使所形成的平坦化图案2平整的同时，且平坦化图案2不会很厚，有助于显示基板的轻薄化。
如上所述，所述显示基板的驱动元件可以是薄膜晶体管5。在一个实施例中，所述薄膜晶体管5可以包括位于所述基底10上的栅极51以及位于所述栅极51上方的源极52和漏极53，所述第一电极(即，阳极3)通过沿着所述第一像素限定层1和所述基底10的堆叠方向贯穿所述第一像素限定层1和第一平坦化层6的第三过孔12连接至薄膜晶体管5的漏极53。例如，如图1所示，第一平坦化层6和第一像素限定层1的对应薄膜晶体管5的漏极53的位置设置有第三过孔12，阳极3的材料填充第三过孔12，以与薄膜晶体管5的漏极53电连接。另外，该薄膜晶体管5所在区域与OLED器件所在区域至少部分重叠。从而可以有效的提高显示基板的像素开口率，以及显示基板的分辨率。
如图2所示，在本公开的一个实施例提供了另一种显示基板。图2所示的显示基板的基底10和第二像素限定层4之间的结构可以与图1所示的显示基板的基底10和第二像素限定层4之间的结构相同。在下文中，主要描述图2的显示基板与图1所示的显示基板的不同之处。该显示基板还可以包括至少设置在第二容纳部 41中的OLED器件的有机功能层7和阴极8，阴极8设置在有机功能层7的背离基底10的一侧。如图2所示，有机功能层7和阴极8可以覆盖第二像素限定层4的整个上表面。例如，有机功能层7可选的可以包括沿背离基底10方向，依次设置的空穴注入层、空穴传输层、发光层、电子传输层、电子注入层。在此情况下，阳极3与有机功能层7的空穴注入层接触并与空穴注入层电连接，阴极8与有机功能层7的电子注入层接触并与电子注入层电连接。在一个实施例中，有机功能层7可以仅包括设置在第二容纳部41中和第二像素限定层4的上表面上的发光层。在一个实施例中，所述OLED器件可以包括阳极3、第二像素限定层4、有机功能层7和阴极8。
在此需要说明的是，本实施例的OLED基板中像素限定层不局限于两层，也即不局限于仅包括第一像素限定层1和第二像素限定层4。例如，只要除在沿背离基底10上依次设置的最后一层像素限定层外，其余像素限定层的第一容纳部11中的平坦化图案2的背离基底10的表面与所述其余像素限定层的背离基底10的表面齐平即可。
以下将描述所述显示基板的制备方法，参照下文的描述，所述显示基板的结构将更清楚。
本公开的一个实施例提供一种显示基板的制备方法，该方法可以用于制备上述的显示基板。下文以显示基板为OLED基板为例进行说明。
在本实施例中，构图工艺可只包括光刻工艺，也可以包括光刻工艺以及刻蚀步骤，同时该构图工艺还可以包括打印、喷墨等其他用于形成预定图形的工艺。光刻工艺是指包括成膜、曝光、显影等工艺过程并利用光刻胶、掩模板、曝光机等形成图形的工艺。可根据本公开中所形成的结构选择相应的构图工艺。
如图3所示，本实施例中的OLED基板的制备方法具体可以包括如下步骤S1至步骤S8。
步骤S1、在基底10上形成用于驱动各OLED器件的驱动元 件。例如，该驱动元件可以包括薄膜晶体管5等。而对于制备薄膜晶体管5各层结构的步骤，可以采用现有工艺，薄膜晶体管5可以是顶栅型，也可以是底栅型。作为示例实施例，图5中示出了底栅型薄膜晶体管5。薄膜晶体管5可以包括栅极51、源极52和漏极53(如图1所示)，如上文参照图1描述的那样。
步骤S2、在驱动元件上形成第一平坦化层6。
在该步骤中，例如可以采用的旋涂的方式形成第一平坦化层6，此时第一平坦化层流平完成上述步骤的基底10，可以使得之后步骤中所形成的膜层足够平整，且不会很厚，有助于OLED基板的轻薄化。在一个实施例中，第一平坦化层6的材料可以包括酰胺类二烯、仲胺类二烯、仲胺类丙烯酸酯、含异氰酸酯的丙烯酸单体化合物中的至少一种。
步骤S3、在第一平坦化层6上通过构图工艺形成具有第一容纳部(例如，第一过孔)11的第一像素限定层1，其中，所述第一像素限定层1中具有第一容纳部11。
在该步骤中，可以采用等离子体增强化学气相沉积方式、低压化学气相沉积方式、大气压化学气相沉积方式或电子回旋谐振化学气相沉积方式沉积形成第一像素限定层1的整层膜层结构，之后再通过刻蚀形成具有第一容纳部11的第一像素限定层1。该第一容纳部11的位置与薄膜晶体管5所在区域在基底10上的正投影是至少部分重叠的，这样有利于提高像素开口率，以及显示基板的分辨率。第一像素限定层1的材料可以是本领域技术人员公知的材料。
步骤S4、在第一容纳部11中形成平坦化图案2，使得平坦化图案2的背离基底10的表面与第一像素限定层1的背离基底10的表面齐平。
在该步骤中，具体的可以采用的流平的方式形成第二平坦化层，之后，对第二平坦化层进行刮涂，形成仅位于第一容纳部11中的平坦化图案2。平坦化图案2的材料可以与第一平坦化层6的材料相同。
当然，在该步骤中也可采用等离子体增强化学气相沉积方式、低压化学气相沉积方式、大气压化学气相沉积方式或电子回旋谐振化学气相沉积方式沉积形成第二平坦化层。
步骤S5、形成沿着所述第一像素限定层1和所述基底10的堆叠方向贯穿第一平坦化层6和第一像素限定层1的第三过孔12。之后，通过构图工艺形成OLED器件的阳极3，以使阳极3通过第三过孔12与薄膜晶体管5的漏极53连接，而且所形成的OLED器件的阳极3覆盖平坦化图案2。此外，阳极3的至少覆盖平坦化图案2的部分具有均匀的厚度以及平坦的上表面和下表面。
步骤S6、在第一像素限定层1和平坦化图案2上通过构图工艺形成第二像素限定层4，其中，第二像素限定层4中具有第二容纳部(例如，第二过孔)41。第二容纳部41与第一容纳部11对应设置，例如，所述第二容纳部41在所述基底10上的正投影落入所述第一容纳部11在所述基底10上的正投影之内，且第二容纳部41使阳极3暴露出来。
在该步骤中形成第二像素限定层4的工艺可以与形成第一像素限定层1的工艺相同，在此不再重复描述。当然，如果第二像素限定层4制作的较厚时，也可以采用涂覆的工艺制作。
步骤S7、在形成第二容纳部41之后，可以通过喷墨打印的方式在第二容纳部41中和/或第二像素限定层4上形成OLED器件的有机功能层7。然而，本公开不限于采用喷墨打印的方式形成有机功能层7。在一个实施例中，有机功能层7可选的包括沿背离基底10方向，依次设置的空穴注入层、空穴传输层、发光层、电子传输层、电子注入层。在一个实施例中，有机功能层7可以仅包括发光层。
以此方式，由于平坦化图案2表面平整，故步骤S5中所形成的阳极3的表面也是平整的，因此在该步骤S7中所形成的有机功能层7也是平整的，从而有效的改善了显示基板发光不均一的问题。
在此需要说明的是，步骤S7中所形成的有机功能层7也可以 不仅仅位于第二容纳部41中，也可以是覆盖位于同一行或者同一列的第二容纳部41，还可以是覆盖整张显示基板中的第二容纳部41，具体如何制备有机功能层7可以根据显示基板的具体情况而定。
步骤S8、在有机功能层7上，可以通过蒸镀的方式形成各个OLED器件的阴极8。对于阴极，可选的各个OLED器件的阴极8制备成一体结构，方便阴极8的控制，且简化工艺。
在根据本公开的实施例的显示基板及其制备方法中，由于在采用顶发射型的OLED器件的情况下，显示基板的每个像素中的驱动元件(例如，薄膜晶体管5)所在区域和OLED器件所在区域在基底10上的正投影是至少部分重叠的，甚至完全重叠，因此可以提供显示基板的开口率。此外，在第一像素限定层1中与待形成的OLED器件的区域对应的位置形成第一容纳部11，并在第一容纳部11填充平坦化图案2，且该平坦化图案2背离基底10表面与第一像素限定层1的背离基底10表面齐平。因此，在该平坦化图案2之上所形成的第一电极也是表面平整的。这样一来，使得继而形成在第二容纳部41中的OLED器件的有机功能层7也将是平整，故有效的减轻或消除了显示基板中的各个OLED器件发光不均一的问题。
本公开的一个实施例提供一种显示装置，该显示装置可以包括上述图1或图2所示的显示基板。
例如，显示装置可以为液晶显示装置或者电致发光显示装置，例如液晶面板、电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
本实施例中的显示装置中的发光层具有均匀的厚度，因此显示装置具有较好的显示质量。
应当理解的是，以上实施方式仅仅是为了说明本公开的原理而采用的示例性实施方式，然而本公开并不局限于此。对于本领 域内的普通技术人员而言，在不脱离本公开的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也属于本公开的保护范围。

Claims (20)

  1. 一种显示基板，包括：
    基底；
    位于所述基底上的第一像素限定层，其中，所述第一像素限定层中具有第一容纳部；
    填充于所述第一容纳部中的平坦化图案，其中，所述平坦化图案的背离所述基底的表面与所述第一像素限定层的背离所述基底的表面齐平；
    位于所述平坦化图案背离所述基底一侧的第二像素限定层，其中，所述第二像素限定层中沿着所述第一像素限定层和所述基底的堆叠方向贯穿设置第二容纳部，所述第二容纳部在所述基底上的正投影落入所述第一容纳部在所述基底上的正投影之内；以及
    有机功能层，其设置在所述第二容纳部中。
  2. 根据权利要求1所述的显示基板，还包括：位于所述平坦化图案和所述有机功能层之间的第一电极，其中，所述第一电极覆盖所述平坦化图案。
  3. 根据权利要求1或2所述的显示基板，其中，在所述第一像素限定层靠近所述基底的一侧还设置有与所述第一像素限定层接触的第一平坦化层。
  4. 根据权利要求3所述的显示基板，其中，所述第一像素限定层在所述基底上的正投影落入所述第一平坦化层在所述基底上的正投影之内。
  5. 根据权利要求2所述的显示基板，还包括位于所述有机功能层背离所述基底一侧的第二电极。
  6. 根据权利要求5所述的显示基板，其中，所述显示基板包括OLED基板，所述第一电极为反射电极，所述第二电极为透射电极。
  7. 根据权利要求6所述的显示基板，其中，在所述基底和所述第一像素限定层之间还设置有薄膜晶体管，其中，所述薄膜晶体管所在区域与所述第一电极、所述第二电极和所述有机功能层所在区域在所述基底上的正投影至少部分重叠。
  8. 根据权利要求1至7中任一项所述的显示基板，其中，所述第一容纳部为沿着所述第一像素限定层和所述基底的堆叠方向贯穿所述第一像素限定层的第一过孔。
  9. 根据权利要求1至8中任一项所述的显示基板，其中，所述第二容纳部为沿着所述第一像素限定层和所述基底的堆叠方向贯穿所述第二像素限定层的第二过孔。
  10. 根据权利要求7所述的显示基板，
    其中，在所述第一像素限定层靠近所述基底的一侧还设置有与所述第一像素限定层接触的第一平坦化层；以及
    其中，所述薄膜晶体管包括位于所述基底上的栅极以及位于所述栅极上方的源极和漏极，所述第一电极通过沿着所述第一像素限定层和所述基底的堆叠方向贯穿所述第一像素限定层和所述第一平坦化层的第三过孔连接至所述漏极。
  11. 一种显示装置，包括根据权利要求1至10中任一项所述的显示基板。
  12. 一种制备显示基板的方法，包括以下步骤：
    在基底上，通过构图工艺形成第一像素限定层，其中，所述第一像素限定层中具有第一容纳部；
    形成填充于所述第一容纳部中的平坦化图案，其中，所述平坦化图案的背离所述基底的表面与所述第一像素限定层的背离所述基底的表面齐平；
    通过构图工艺形成第二像素限定层，其中，所述第二像素限定层中沿着所述第一像素限定层和所述基底的堆叠方向贯穿设置第二容纳部，所述第二容纳部在所述基底上的正投影落入所述第一容纳部在所述基底上的正投影之内；以及
    至少在所述第二容纳部中形成有机功能层。
  13. 根据权利要求12所述的方法，其中，在形成所述第二像素限定层的步骤之前，所述方法还包括以下步骤：
    在所述平坦化图案上形成第一电极，其中，所述第一电极覆盖所述平坦化图案。
  14. 根据权利要求12或13所述的方法，其中，在所述形成第一像素限定层的步骤之前，所述方法还包括以下步骤：
    在所述基底上形成第一平坦化层，其中，所述第一像素限定层靠近所述基底的一侧与所述第一平坦化层接触。
  15. 根据权利要求12所述的方法，其中，所述形成填充于所述第一容纳部中的平坦化图案的步骤包括以下步骤：
    在所述第一像素限定层背离所述基底的一侧形成第二平坦化层；以及
    对所述第二平坦化层进行刮涂，形成仅位于所述第一容纳部中的平坦化图案。
  16. 根据权利要求15所述的方法，其中，在所述至少在所述第二容纳部中形成有机功能层的步骤之后，所述方法还包括以下 步骤：
    在所述有机功能层背离所述基底的一侧形成第二电极。
  17. 根据权利要求12所述的方法，其中，所述显示基板包括OLED基板；在所述形成第一像素限定层之前，所述方法还包括以下步骤：
    在所述基底上形成包括薄膜晶体管的各层结构，其中，所述薄膜晶体管所在区域与所述第一电极、所述第二电极和所述有机功能层所在区域在所述基底上的正投影至少部分重叠。
  18. 根据权利要求12至17中任一项所述的方法，其中，所述有机功能层通过喷墨打印技术来形成。
  19. 根据权利要求12至18中任一项所述的方法，其中，通过形成沿着所述第一像素限定层和所述基底的堆叠方向贯穿所述第一像素限定层的第一过孔来形成所述第一容纳部，并且通过形成沿着所述第一像素限定层和所述基底的堆叠方向贯穿所述第二像素限定层的第二过孔来形成所述第二容纳部。
  20. 根据权利要求17所述的方法，其中，
    在所述形成第一像素限定层的步骤之前，所述方法还包括以下步骤：
    在所述基底上形成第一平坦化层，其中，所述第一像素限定层靠近所述基底的一侧与所述第一平坦化层接触；以及
    所述在所述基底上形成包括薄膜晶体管的各层结构的步骤包括以下步骤：
    在所述基底上形成栅极；以及
    在所述栅极上方形成源极和漏极，使得所述第一电极通过沿着所述第一像素限定层和所述基底的堆叠方向贯穿所述第一像素限定层和所述第一平坦化层的第三过孔连接至所述漏极。
PCT/CN2019/073406 2018-06-25 2019-01-28 显示基板及其制备方法和显示装置 WO2020001020A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/621,933 US11362155B2 (en) 2018-06-25 2019-01-28 Display substrate, manufacturing method thereof and display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810662016.7A CN108831916B (zh) 2018-06-25 2018-06-25 显示基板及其制备方法、显示装置
CN201810662016.7 2018-06-25

Publications (1)

Publication Number Publication Date
WO2020001020A1 true WO2020001020A1 (zh) 2020-01-02

Family

ID=64138261

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/073406 WO2020001020A1 (zh) 2018-06-25 2019-01-28 显示基板及其制备方法和显示装置

Country Status (3)

Country Link
US (1) US11362155B2 (zh)
CN (1) CN108831916B (zh)
WO (1) WO2020001020A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108831916B (zh) 2018-06-25 2020-06-05 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
CN111863908B (zh) * 2020-07-28 2022-11-11 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101114668A (zh) * 2006-03-27 2008-01-30 三星Sdi株式会社 有机发光显示装置及其制造方法
US20110175095A1 (en) * 2010-01-21 2011-07-21 Samsung Mobile Display Co., Ltd. Organic light-emitting diode display apparatus and method of manufacturing the same
CN104659059A (zh) * 2013-11-20 2015-05-27 三星显示有限公司 有机发光二极管显示器及其制造方法
US9099415B2 (en) * 2012-03-02 2015-08-04 Samsung Display Co., Ltd. Organic light-emitting display device
CN108831916A (zh) * 2018-06-25 2018-11-16 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7893438B2 (en) * 2003-10-16 2011-02-22 Samsung Mobile Display Co., Ltd. Organic light-emitting display device including a planarization pattern and method for manufacturing the same
KR101326135B1 (ko) * 2006-11-27 2013-11-07 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR101074788B1 (ko) * 2009-01-30 2011-10-20 삼성모바일디스플레이주식회사 평판 표시 장치 및 이의 제조 방법
JP5423325B2 (ja) * 2009-11-10 2014-02-19 ソニー株式会社 発光素子及びその製造方法
US9018835B2 (en) * 2010-05-31 2015-04-28 Sharp Kabushiki Kaisha Organic EL device, electronic device, and process for production of organic EL device
KR102014827B1 (ko) * 2012-06-12 2019-08-28 삼성디스플레이 주식회사 광학 필름 및 이를 포함하는 유기 전계 표시 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101114668A (zh) * 2006-03-27 2008-01-30 三星Sdi株式会社 有机发光显示装置及其制造方法
US20110175095A1 (en) * 2010-01-21 2011-07-21 Samsung Mobile Display Co., Ltd. Organic light-emitting diode display apparatus and method of manufacturing the same
US9099415B2 (en) * 2012-03-02 2015-08-04 Samsung Display Co., Ltd. Organic light-emitting display device
CN104659059A (zh) * 2013-11-20 2015-05-27 三星显示有限公司 有机发光二极管显示器及其制造方法
CN108831916A (zh) * 2018-06-25 2018-11-16 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置

Also Published As

Publication number Publication date
US20210296414A1 (en) 2021-09-23
CN108831916B (zh) 2020-06-05
CN108831916A (zh) 2018-11-16
US11362155B2 (en) 2022-06-14

Similar Documents

Publication Publication Date Title
US10204966B2 (en) Organic light-emitting display device and method of manufacturing the same
US9478592B2 (en) Thin film transistor array substrate
US11985840B2 (en) Display substrate, manufacturing method thereof and display device
US20170033164A1 (en) Color film substrate and method for manufacturing the same, oled display panel and display apparatus
US10707449B2 (en) Array substrate, method of preparing the same and display panel
CN110890406B (zh) 一种有机发光显示背板、其制作方法及显示装置
CN109346505B (zh) 一种有机发光显示面板、其制备方法及显示装置
WO2016101576A1 (zh) 阵列基板及其制作方法和显示装置
WO2018209977A1 (zh) 阵列基板及其制造方法、显示面板和显示装置
US11183111B2 (en) Pixel unit and method for manufacturing the same, and double-sided OLED display device
WO2020233284A1 (zh) 显示面板及其制作方法、显示装置
WO2020173102A1 (zh) 阵列基板及其制造方法、显示面板及显示装置
CN110402496B (zh) 显示基板、显示设备、制造显示基板的方法
JP6980645B2 (ja) Ｏｌｅｄディスプレイ基板、ｏｌｅｄディスプレイ装置およびｏｌｅｄディスプレイ基板の製造方法
WO2019205834A1 (zh) 有机发光显示面板及其制备方法、显示装置
US10930518B2 (en) OLED substrate and manufacturing method thereof, display device and manufacturing method thereof
US20200251678A1 (en) Organic electroluminescent display panel, manufacturing method thereof and display device
CN108573998B (zh) 显示面板及制造方法、显示装置
US11665919B2 (en) Display panel, manufacturing method thereof, and intelligent terminal
WO2021104295A1 (zh) 显示装置及其oled面板、oled面板的制作方法
TW201733409A (zh) 顯示裝置及其製造方法
WO2020001020A1 (zh) 显示基板及其制备方法和显示装置
US20180315948A1 (en) Organic light-emitting diode component and manufacturing method, display panel and display device
US11233115B2 (en) Display panel and manufacturing method thereof, and display device
US20230032598A1 (en) Display panel, display apparatus, and manufacturing method for display panel

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19824876

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 22.04.2021)

122 Ep: pct application non-entry in european phase

Ref document number: 19824876

Country of ref document: EP

Kind code of ref document: A1