WO2019227192A1 - Réacteur industriel pour la déposition chimique en phase vapeur assistée par plasma de revêtements en film fin et installation sous vide - Google Patents

Réacteur industriel pour la déposition chimique en phase vapeur assistée par plasma de revêtements en film fin et installation sous vide Download PDF

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Publication number
WO2019227192A1
WO2019227192A1 PCT/BY2018/000011 BY2018000011W WO2019227192A1 WO 2019227192 A1 WO2019227192 A1 WO 2019227192A1 BY 2018000011 W BY2018000011 W BY 2018000011W WO 2019227192 A1 WO2019227192 A1 WO 2019227192A1
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WIPO (PCT)
Prior art keywords
substrate
vacuum
reactor
housing
holder
Prior art date
Application number
PCT/BY2018/000011
Other languages
English (en)
Russian (ru)
Inventor
Владимир Яковлевич ШИРИПОВ
Евгений Александрович ХОХЛОВ
Александр Алексеевич Ясюнас
Сергей Михайлович НАСТОЧКИН
Original Assignee
Shiripov Vladimir Jakovlevich
Khokhlov Evgeniy Aleksandrovich
Yasunas Aleksander Alekseevich
Nastachkin Siarhei Michailavich
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shiripov Vladimir Jakovlevich, Khokhlov Evgeniy Aleksandrovich, Yasunas Aleksander Alekseevich, Nastachkin Siarhei Michailavich filed Critical Shiripov Vladimir Jakovlevich
Priority to PCT/BY2018/000011 priority Critical patent/WO2019227192A1/fr
Publication of WO2019227192A1 publication Critical patent/WO2019227192A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Definitions

  • the present invention relates to vacuum processing equipment in which the deposition of thin-film coatings is carried out by the method of plasma-stimulated deposition from the vapor-gas phase, and can be used, for example, in the production of silicon solar cells to form passivating layers.
  • Plasma-chemical deposition reactor designs are known in the art, described, for example, as equipment for equipping plants of Oxford Instruments Plasma Technology (http://www.plasmasystem.ru/technology/pecvd). Such reactors typically use high frequency capacitive discharge plasma to activate the deposition process. Plasma is generated between two parallel electrodes, one of which is a passive one located under the ground potential, and the second one is powered by a high frequency voltage. The substrate is fixed to a passive electrode, which can be heated to the temperature required during the deposition process. In the active electrode, a cavity-type gas distributor is provided for supplying and distributing the gas mixture in the discharge region — the treatment zone.
  • the reactor vessel contains channels for removal , products of a plasma-chemical reaction.
  • the reactor includes a housing with a movable cover, in the upper part of which there is an active electrode consisting of a horizontal support plate with a gas distributor fixed to it. Through the active electrode, the reaction gas is supplied to the processing zone of the substrate, which is localized by the walls of the stationary body. At least one grounding node for high-frequency currents is connected to at least one wall of the housing localizing the processing zone.
  • the flat substrate is located under its weight without additional retention on a horizontal passive electrode, made with the possibility of vertical movement.
  • a shadow frame is installed above the substrate, covering the edge of the substrate.
  • Substrate holder - a passive electrode may include heating and / or cooling elements to maintain a given substrate temperature.
  • the gas distribution system of the reactor is made in the form of a channel in a horizontal support plate for supplying reaction gas to the internal cavity of the active electrode and holes in the gas distributor. Channels for pumping plasma-chemical reaction products are made in the reactor vessel.
  • the disadvantages of the described reactor include the location of a flat substrate on a holder, a passive electrode. The maximum contact of the working surface of the plate with the holder can lead to mechanical damage and contribute to the introduction of contaminants. Such defects may turn out to be unrecoverable or not completely eliminated in the subsequent technological process of coating formation.
  • the described reactor design allows coating only on the upper flat side of the substrate, and processing of the second side becomes possible only after its revolution.
  • the coup and transport operations can also serve as an additional source of pollution and defects.
  • the vacuum installation is made of at least two vacuum chambers located one inside the other.
  • the inner chamber is a technological reactor, in which the deposition of coatings is carried out.
  • the lower part of the reactor vessel is made movable vertically to open / close the reactor when loading / unloading substrates.
  • the use of several technological reactors in the described vacuum installation allows you to realize the possibility of a flexible sequence of operations in a single technological cycle and to eliminate the influence of technological processing zones on each other during the deposition process, but does not exclude cross-contamination at the moments of opening and closing of technological reactors.
  • the disadvantages of the described design are the deposition of layers on one side of the substrate in one vacuum cycle and the fact that the transportation of the substrate when loading into the technological reactor is carried out using holding rods with an elevator system for raising the substrate and lowering it to the passive electrode located in the lower part of the technological reactor body, which leaves mechanical defects on its working surface. For subsequent coating on the reverse side of the substrate, depressurization of the vacuum unit and flipping of the substrate in the atmosphere will be required.
  • an oxide may form on its surface, which will reduce the quality of the subsequent formed layers.
  • the technical problem to be solved by the patented invention is the creation of a vacuum installation with technological reactors for plasma-chemical deposition of thin films from the vapor-gas phase, the design of which allows thin-film coatings to be applied to both sides of a flat substrate without its overturn, to reduce mechanical damage and contamination of the substrate during processing by minimizing its contact with the holder, as well as provide an overall improvement in the quality of processing of the substrate and eliminate other disadvantages known in the prior art.
  • the process reactor for plasma-chemical deposition of thin-film coatings on a flat substrate includes a detachable sealed housing, consisting of two parts; a hollow active electrode installed in the first of the indicated parts of the casing, configured to supply high frequency voltage to it and provided with openings for supplying the working gas to the coating zone, and a passive electrode installed in parallel with it, which is the second specified casing part, as well as a gas evacuation system from the housing, heating elements for maintaining a predetermined temperature of the substrate and a movable substrate holder arranged between said electrodes, adapted to contact the one with the latter at its periphery with a total contact area of less than 0.5% of the substrate area, and designed to install the substrate with a gap relative to the passive electrode, less than the distance of formation of a high-frequency capacitive discharge between them, both parts of the housing being like the active electrode, made with the possibility of independent reciprocating movement in the direction perpendicular to the plane of the substrate in the holder.
  • the active electrode of the technological reactor contains an excitation electrode of the indicated discharge and a shielding enclosure surrounding it, mounted relative to the excitation electrode with a gap not exceeding 2 mm, and said movable substrate holder is designed to install the substrate with a gap relative to the passive electrode not exceeding 2 mm.
  • the gas pumping system contains a pumping distributor, made inside the first part of the housing along its perimeter, and heating elements are located in both parts of the housing.
  • the technological reactor for plasma-chemical deposition of thin-film coatings on a flat substrate contains a detachable sealed housing, consisting of two parts; the first and second hollow active electrodes parallel to each other installed in the first and second of these parts of the housing, each of which is configured to supply high voltage to it and is provided with openings for supplying working gas to the coating zone, as well as a system for pumping gases from housings, heating elements to maintain a predetermined temperature of the substrate and a movable substrate holder located between said electrodes, adapted to contact the latter by its peripherals with a total area of the specified contact equal to 0.5% of the area of the substrate, and designed to install the substrate with a gap relative to these electrodes, both parts of the housing, as well as these electrodes, are made with the possibility of independent reciprocating movement in the direction perpendicular to the plane the location of the substrate in the holder.
  • the active electrode of the process reactor contains an excitation electrode of a high-frequency capacitive discharge and a shielding enclosure surrounding it, mounted relative to the excitation electrode with a gap not exceeding 2 mm, a gas pumping system that includes a pump-out distributor made inside the first part of the housing its perimeter, and heating elements located in both parts of the body.
  • the vacuum installation for plasma-chemical deposition of thin-film coatings on a flat substrate contains a sealed vacuum corridor inside which at least one reactor according to the second embodiment and / or two reactors according to the first embodiment are located, a transport system for moving the holder with the substrate inside the vacuum corridor, as well as a system for pumping gases from the vacuum corridor, made with the possibility of maintaining less pressure in it than the working one pressure in all of these reactors.
  • two or more reactors are placed in a vacuum corridor, they can be separated from each other by gas or mechanical valves.
  • additional heating elements can be installed in the vacuum corridor to maintain a given substrate temperature.
  • FIG. 1 is a diagram of a process reactor having one active electrode
  • FIG. 2 is a diagram of a process reactor having two active electrodes
  • FIG. 3 is a diagram of a vacuum installation with two process reactors, each of which contains one active electrode
  • FIG. 4 - diagrams of a vacuum installation with three process reactors containing various amounts active electrodes
  • FIG. Figure 5 shows the distribution of the photoluminescence intensity of a solar cell: a) manufactured on standard plasma-chemical deposition equipment, b) on a patented vacuum installation.
  • the technological reactor (Fig. 1) contains a sliding housing made of two movable parts: a locking body 1 and a locking electrode 2, while an active electrode is placed in the locking body 1.
  • the active electrode includes an electrode 3 for exciting plasma in the treatment zone 4, a shielding housing 5, designed to localize high-frequency energy and prevent the initiation of spurious discharge, and a gas distributor 6 with holes for supplying and distributing process gases in the treatment zone 4.
  • the active electrode is configured to the reciprocating movement inside the first part of the process reactor housing is in the shut-off housing 1.
  • the gap between the electrode 3 and the shielding housing 5 does not exceed 2 mm. The increase in the gap leads to the appearance of "spurious" discharges between the electrode and the shielding housing.
  • part of the input power is dissipated by uncontrolled random “parasitic” processes that violate the stability of chemical reactions in the treatment zone, stoichiometry and uniformity of the formed layer.
  • the second movable part of the body of the process reactor - the locking electrode 2 is a passive electrode located under the ground potential. In the operational state of the technological reactor, both parts of the casing are tightly closed and form a barrier for the distribution of gas from the technological reactor.
  • a holder 7 is mounted between the parallel electrodes 3 and 2, on which a flat substrate 8 is held parallel to the electrodes 8.
  • the holder 7 is frame-shaped so that all surfaces of the substrate are open for processing, and the substrate itself is held by flanges protruding inwardly so that the contact area of the substrate and the holder does not exceed 0.5% of its area. Flanging can be performed around the entire perimeter of the frame or in only a few places, holding the plate along the entire contour or at several points, respectively.
  • the width of the treatment zone 4 is controlled by the movement of the active electrode relative to the substrate 8, thereby controlling the adjustment of the uniformity of deposition in the process reactor.
  • the locking electrode 2 is close to the back side of the substrate 8, but does not touch it.
  • the reverse side which is not subjected to processing, is at a distance of not more than 2 mm from the locking electrode 2.
  • the width of the gap between the locking electrode 2 and the substrate 8 is less than the distance at which a high-frequency capacitive discharge at pressures below 500 Pa, therefore, a thin film coating is deposited only on the surface of the substrate from the side of the active electrode.
  • the heating elements 9 of the locking body 1 and the heating elements 10 of the locking electrode 2, designed to create an operating temperature in the treatment zone 4 and maintain the temperature of the internal surfaces of the process reactor, are located in the locking body 1 and in the locking electrode 2, respectively.
  • the implementation of uniform heating of the entire inner area A technological reactor is necessary for the production of high-quality thin-film coatings, since chemical reactions in unheated areas lead to the formation of fine particles, the presence of which increases the number of defects in the formed coating.
  • a gas channel 1 1 is provided, through which working gas is supplied to the internal cavity 12 of the excitation electrode 3, which then passes through the holes in the gas distributor 6 to the treatment zone 4.
  • the system for pumping gases from a process reactor to divert the products of a plasma-chemical reaction includes a pumping distributor 13, made in the shut-off housing 1 of the reactor along its perimeter, and designed to uniformly remove gaseous reaction products from the process reactor through the pumping channels 14, which are also contained in the shut-off housing 1.
  • a technological reactor with two active electrodes (Fig. 2).
  • the holder 7 of the substrate 8 is fixed between the active electrodes, for example, two moving parts of the casing, in a plane parallel to the gas distributors of both electrodes during the process.
  • gas reagents are transported to two treatment zones through each active electrode, and both moving parts of the housing contain a gas evacuation system with a pumping distributor and channels.
  • a vacuum installation (FIG. 2) for producing coatings in one vacuum cycle on both sides of a flat substrate in which a process reactor with two active electrodes is used includes at least one lock chamber (not shown in the figure), and at least , one plasma-chemical deposition technological reactor located inside a vacuum corridor 15.
  • the movement of the substrate 8 from the moment of loading into the vacuum unit and until the moment of unloading is carried out by a transport system (not shown in the figure), on which a holder 7 with a substrate 8 is mounted.
  • the vacuum installation has a differentiated pumping system: the technological reactor is pumped out by its own pumping system, for which the reactor has an independent pumping channel 14 with a pumping distributor 13, and the gas is pumped out from the vacuum corridor 15 through the pumping system of the vacuum corridor through the pumping channel 16.
  • the vacuum corridor 15 maintain pressure Pi less than ⁇ 2 - pressure inside the process reactor.
  • gases penetrating the vacuum corridor through seals and as a result of degassing of the internal surfaces of the vacuum corridor are removed mainly by means of evacuating the vacuum corridor and do not affect the composition of the gaseous medium in the treatment zone 4.
  • the reproducible technological process and coating quality are improved due to reducing the concentration of undesirable gaseous impurities, such as water vapor, oxygen, nitrogen.
  • the body parts are tightly closed and form a barrier for the flow of gases, creating a difference between the separated volumes of at least one order of magnitude.
  • a vacuum installation in which at least two process reactors are used (Fig. 3) having one active electrode each also allows thin-film layers to be formed on both sides of the substrate alternately in one vacuum cycle without turning the substrate between operations.
  • the transport system moves the substrate in the holder between the process reactors.
  • a vacuum installation reactors can be separated from each other in a vacuum corridor by gas or mechanical locks.
  • a vacuum installation with two process reactors (Fig. 3) having one active electrode each works as follows.
  • the flat substrate 8 is placed on the frame holder 7, which is then mounted on the transport system of the vacuum unit and loaded into the lock chamber.
  • the sluice chamber and the vacuum corridor are pumped out, while around the technological reactors located in the vacuum corridor, the pumping system provides a pressure P ] of no more than 10 Pa.
  • the vacuum shutter connecting the lock chamber and the vacuum corridor is opened, and the carrier 7 moves the holder 7 with the substrate 8 into the vacuum corridor 15 and the vacuum shutter is closed.
  • the holder 7 with the substrate 8 is moved to the first technological reactor at the position of deposition of the coating on the front side of the flat substrate.
  • the technological reactor is in the transport position, i.e. open - movable frequent ?” buildings 1 and 2 are apart.
  • the process reactor is closed: the locking body 1 and the locking electrode 2 are pressed against the holder 7, as a result of which the locking electrode 2 approaches the substrate 8 with a minimum gap, but does not touch it.
  • the presence of a gap prevents mechanical contact of the reverse surface of the substrate and parts of the process reactor, thereby preventing damage to the surface of the substrate, which improves the characteristics of the formed layers.
  • heating elements 9 and 10 which provide heating of the substrate 8 to a temperature specified by the process conditions.
  • the working gas mixture with a controlled flow rate and composition along the working gas supply channel 1 1 is fed through the openings of the gas distributor 6 in the active electrode 3 into the processing reactor into the treatment zone 4.
  • the specified working pressure and temperatures include a high-frequency generator: in the processing zone 4, a high-frequency capacitive discharge plasma is generated and the deposition process begins.
  • the uniformity of deposition in the technological reactor is adjusted by controlling the width of the plasma formation region, which is equal to the distance between the active electrode and the surface of the substrate 8 from the side of the active electrode.
  • the width of the plasma formation region is regulated by a special drive with a servomotor (not shown in the figure) in the range from 8 to 50 mm.
  • the gap width between the locking electrode 2 and the back side of the substrate 8 is less than the distance at which a high-frequency capacitive discharge can form at pressures below 500 Pa, the film is deposited only on the front surface of the substrate from the side of the active electrode.
  • the gas is pumped out from the treatment zone 4 through the pumping distributor 13, from where the gas enters the pumping channel 14 of the process reactor.
  • the technological reactor Upon completion of the deposition process, the technological reactor is opened, i.e., transferred to the transport position. For this, the locking body 1 and the locking electrode 2 are moved vertically to the opposite sides of each other, releasing the holder 7.
  • the gas is pumped both through the pumping channel 14 of the technological reactor, and along the pumping channel 16 of the vacuum corridor 15.
  • the carrier 7 moves the holder 7, in which the substrate 8 is coated on the front side, to the next process reactor, which is also in the transport position at this time.
  • the active electrode is located on the back side of the flat substrate, therefore, both the working gas and high-frequency power are supplied to the treatment zone 4 from its reverse side.
  • the coating is deposited on the back side of the substrate in the same way as in the first reactor.
  • the substrate with thin-film coatings deposited on both sides is discharged through the transport system from the vacuum corridor through the vacuum shutter to the lock chamber and passed on through the production cycle.
  • a vacuum installation for applying passivating layers of heterostructured silicon solar cells with three process reactors works as follows.
  • the substrate 8 a p-type silicon wafer
  • the substrate 8 is transferred to the deposition position by the transport system.
  • a flat frame holder is used, the design of which provides for the contact zone of the holder-substrate of less than 1 cm on one side of the wafer. Since the silicon wafer has a total area of 156x156 mm, the holder-substrate area is less than 0.5% of the total wafer area. Moreover, the design of the holder provides for the possibility of processing the silicon wafer from any side.
  • the reactor is closed, for this, the holder 7 is pressed by two locking bodies 1.
  • SiH 4 monosilane
  • H 2 hydrogen
  • a 60 W high-frequency generator is connected to each active electrode of the reactor for generating in the treatment zones 4 of the plasma a high-frequency capacitive discharge and for 20 s carry out the process of deposition of a layer of amorphous hydrogenated silicon of its own type of conductivity.
  • the uniformity of deposition in the technological reactor is adjusted by controlling the distance between the active electrodes and the surfaces of the silicon wafer.
  • the gas is pumped out from both treatment zones 4 through the pumping distributors 13, from where the gas enters the pumping channels 14 made in each shut-off housing 1.
  • the first process reactor Upon completion of the deposition process, the first process reactor is transferred to the transport position, for which both locking bodies 1 together with the active electrodes are moved in opposite directions, releasing the holder 7.
  • the holder 7 with the substrate 8 is moved by the transport system to the next technological reactor with one active electrode, which at that moment is also in the transport position.
  • both the pumping systems of each technological reactor and the pumping system of the vacuum corridor operate: gas is pumped out through the pumping channels 14 and along the pumping channel 16.
  • the working gas and high-frequency power are supplied to the treatment zone above the front side of the silicon wafer, onto which a layer of amorphous hydrogenated p-type silicon conductivity is applied in the process.
  • the second technological reactor is transferred to the transport position, and the coated substrate 8 is transferred by the transport system to the next third technological reactor, which is also open at that time, i.e., in the transport position.
  • a layer of amorphous hydrogenated silicon of n-type conductivity is deposited on the back of the silicon wafer, with the following process parameters: pressure 400 Pa, monosilane flow rate 10 cm / min, hydrogen flow rate 300 cm / min , phosphine (PH 3 ) consumption 15 cm / min, supplied RF power 60 W, sample temperature 200 ° ⁇ , deposition time 30 s.
  • a silicon wafer with thin-film coatings deposited on both sides is unloaded through the transport system from the vacuum corridor of the vacuum chamber and transferred further through the production cycle.
  • FIG. 5 presents a comparison of the luminescence spectra of silicon wafers after passivation with a layer of intrinsic hydrogenated silicon with a thickness of 20 nm.
  • FIG. 5a is a silicon wafer manufactured in a plasma-chemical deposition apparatus constructed according to the standard scheme in FIG. 56 - silicon wafer with layers of amorphous hydrogenated silicon on two flat surfaces, made on a patentable vacuum installation with patentable reactors. Dark “bands” are visible on the luminescence spectrum of the first sample, which indicate damage to the plate by the manipulator during loading / unloading, and point defects caused by the ingress of dust particles between the sample and the holder.
  • the lifetime of nonequilibrium charge carriers obtained in a patented installation is 3.5 times higher than that obtained under similar conditions in plants using a plate flip with a standard process flow diagram in the technological process, which generally provides an increase in the fill factor (FF) by 3-4%, and accordingly, an increase in the efficiency of the solar cell by 1, 1 -1.5%.
  • FF fill factor
  • thin-film coatings are applied to both sides of a flat substrate without its overturn, mechanical damage and contamination of the substrate are reduced, as well as a general increase in the quality of processing of the substrate and improvement of the technical characteristics of the obtained thin-film structures .
  • the substrate at all stages of processing is placed in a holder that has a minimum contact area with its surface and does not affect its middle working part, which allows to reduce its mechanical damage and pollution; • the design of the process reactor and the vacuum installation, including such reactors, allows all stages of the formation of a thin-film structure to be carried out without a revolution of the substrate;
  • an improved technical characteristic is to increase the lifetime of nonequilibrium charge carriers in a silicon wafer after passivation.
  • heterostructured solar cells will have a higher efficiency.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne des équipements industriels sous vide. Le réacteur comprend un corps hermétique démontable dans une première partie duquel se trouve une électrode active creuse comportant des ouvertures pour l'alimentation en gaz de travail vers la zone de déposition du revêtement, et une électrode passive disposée parallèlement à celle-ci et qui constitue ladite seconde partie du corps, un système de pompage des gaz, des éléments de chauffage pour chauffer un substrat et disposé entre lesdites électrodes, un support mobile du substrat pouvant entrer en contact avec celui-ci sur sa périphérie selon une surface de contact totale représentant moins de 0,5% de la surface du substrat. Les deux parties du corps peuvent effectuer un mouvement de va-et-vient indépendant dans une direction perpendiculaire au plan de disposition du substrat sur un support. L'installation sous vide comprend un couloir sous vide dans lequel se trouve au moins un de plusieurs réacteurs industriels, un système de transport pour déplacer le support avec le substrat dans le couloir sous vide, et un système de pompage des gaz hors du couloir sous vide. On obtient une diminution des dommages mécaniques et de la salissure du substrat, et il est également possible d'appliquer des revêtements en film fin sur les deux côtés d'un substrat plan sans retourner celui-ci.
PCT/BY2018/000011 2018-05-31 2018-05-31 Réacteur industriel pour la déposition chimique en phase vapeur assistée par plasma de revêtements en film fin et installation sous vide WO2019227192A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115142022A (zh) * 2022-06-23 2022-10-04 拉普拉斯(无锡)半导体科技有限公司 一种真空镀膜设备

Citations (3)

* Cited by examiner, † Cited by third party
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EP1953794B1 (fr) * 2004-11-24 2012-02-01 Oerlikon Solar AG, Trübbach Chambre de traitement sous vide pour les substrats de surface très large
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EP1953794B1 (fr) * 2004-11-24 2012-02-01 Oerlikon Solar AG, Trübbach Chambre de traitement sous vide pour les substrats de surface très large
EP3020850A1 (fr) * 2009-07-08 2016-05-18 Aixtron SE Appareil de traitement de plasma
US8728918B2 (en) * 2011-10-21 2014-05-20 Applied Materials, Inc. Method and apparatus for fabricating silicon heterojunction solar cells

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