WO2019219094A2 - 集成电路修补的定位装置及方法 - Google Patents

集成电路修补的定位装置及方法 Download PDF

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WO2019219094A2
WO2019219094A2 PCT/CN2019/094855 CN2019094855W WO2019219094A2 WO 2019219094 A2 WO2019219094 A2 WO 2019219094A2 CN 2019094855 W CN2019094855 W CN 2019094855W WO 2019219094 A2 WO2019219094 A2 WO 2019219094A2
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integrated circuit
infrared
repair
under test
laser beam
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PCT/CN2019/094855
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English (en)
French (fr)
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WO2019219094A3 (zh
Inventor
赵扬
祝金会
张海峰
孙辰军
陈燕宁
赵明敏
李建强
袁远东
Original Assignee
北京智芯微电子科技有限公司
国网信息通信产业集团有限公司
国家电网有限公司
国网河北省电力有限公司
中国电力科学研究院有限公司
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Publication of WO2019219094A2 publication Critical patent/WO2019219094A2/zh
Publication of WO2019219094A3 publication Critical patent/WO2019219094A3/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement

Definitions

  • the present application relates to the field of integrated circuits, and in particular, to a positioning device and method for repairing integrated circuits.
  • the failure analysis technique is to locate the failure points by locating and observing the integrated circuits. These failure points are the points that may cause the integrated circuit to open or short circuit. After the failure point is found, the circuit is repaired.
  • the method of performing integrated circuit positioning in the circuit failure analysis process is to use a passive voltage contrast technology, the integrated circuit has no external bias, and the electron beam or the focused ion beam of the scanning electron microscope is used to scan the surface of the integrated circuit sample, and the surface is different. The brightness and darkness contrast exhibited by different potentials of the part is used for failure positioning. This approach has the following disadvantages:
  • the detection depth is only tens of nanometers.
  • the layer thickness reaches 1um or more, and the high-speed electron cannot penetrate, and cannot The potential difference is formed, and the sample morphology is all gray under the focused ion beam (as shown in FIG. 2), so the internal circuit of the sample cannot be accurately positioned, and the success rate of the failure positioning is reduced, thereby reducing the repair efficiency of the integrated circuit.
  • the purpose of the embodiment of the present invention is to provide a positioning device and a method for repairing an integrated circuit, which can quickly and accurately locate an failure point of an integrated circuit without damage, and can observe the internal structure of the integrated circuit, improve the success rate of the failure positioning, and improve the success rate.
  • the repair efficiency of integrated circuits is to provide a positioning device and a method for repairing an integrated circuit, which can quickly and accurately locate an failure point of an integrated circuit without damage, and can observe the internal structure of the integrated circuit, improve the success rate of the failure positioning, and improve the success rate.
  • an embodiment of the present application provides a positioning device for repairing an integrated circuit, the device comprising an infrared imaging positioning unit and an integrated circuit repairing unit.
  • the infrared imaging positioning unit is configured to perform a failure point location on the integrated circuit under test.
  • An integrated circuit repair unit is used to perform circuit repair on the failure point.
  • the infrared imaging positioning unit comprises a near infrared laser beam generating device, a movable working table, a near infrared receiving processing unit, and a computer.
  • a near-infrared laser beam generating device is used to generate a near-infrared laser beam.
  • a movable workbench is used to place and move the integrated circuit under test to effect scanning of the integrated circuit under test by the near infrared laser beam.
  • the near infrared radiation receiving processing unit is configured to receive near infrared rays reflected by the integrated circuit and convert the near infrared light optical signals into electrical signals.
  • the computer is electrically connected to the movable workbench and the near-infrared receiving processing unit for controlling the movable table movement, and is further configured to receive and process an electrical signal of the near-infrared receiving processing unit to generate Imaging information of an internal circuit of the integrated circuit under test.
  • the near infrared laser beam generating device comprises: a near infrared laser, a near infrared focusing system.
  • Near-infrared lasers are used to emit linearly polarized near-infrared rays.
  • a near infrared focusing system is used to focus the linearly polarized near infrared rays to produce a near infrared laser beam having a diameter on the order of microns.
  • the linearly polarized near infrared light has a wavelength of 1.3 microns.
  • the near infrared radiation receiving processing unit includes: a near infrared lens and a near infrared array.
  • the near infrared lens is for receiving near infrared rays reflected by the integrated circuit under test.
  • a near-infrared array is coupled to the near-infrared lens for converting an optical signal of near-infrared reflected by the integrated circuit under test into an electrical signal.
  • the near infrared array uses an indium gallium arsenide detector.
  • the integrated circuit repair unit repairs a failure point of the integrated circuit under test by using a focused ion beam repair method.
  • the embodiment of the present application further provides a positioning method for repairing an integrated circuit, including the following: a near-infrared laser beam scanning a front side or a back side of the integrated circuit to be tested; collecting near-infrared rays reflected during the scanning of the near-infrared laser beam; The reflected near-infrared light is subjected to photoelectric information processing to obtain an internal circuit structure of the integrated circuit under test; the internal circuit structure is observed to find a failure point of the integrated circuit under test; and circuit repair is performed.
  • the integrated circuit repairing method further comprises: focusing the linearly polarized near infrared rays to obtain the near infrared laser beam.
  • the focused ion beam is used for circuit repair.
  • the positioning device and method for repairing integrated circuits according to embodiments of the present application have the following beneficial effects:
  • the positioning device and method for repairing integrated circuits of the embodiments of the present invention can quickly and accurately locate the failure point of the integrated circuit without damage and can observe the internal structure of the integrated circuit, improve the success rate of the failure positioning, and improve the repair efficiency of the integrated circuit. ;
  • the near-infrared rays can penetrate the characteristics of the semiconductor material and can quickly and non-destructively test the sample to be tested repeatedly, and the near-infrared laser beam is irradiated onto the integrated circuit to be tested, and then received by the near-infrared receiving processing unit.
  • the reflected near-infrared light is processed, and the near-infrared light signal is converted into an electrical signal and sent to a computer for processing to finally generate imaging information of the integrated circuit under test, so that the internal structure of the integrated circuit under test can be obtained.
  • the whole process can be repeated many times, the integrated circuit under test can be observed for a long time, and the failure point is accurately positioned and then repaired. Therefore, the integrated circuit repairing device and method based on the infrared imaging positioning method greatly improves the failure positioning success rate and repairing. effectiveness.
  • FIG. 1 is a structural view of an integrated circuit repairing device based on a focused ion beam localization method
  • FIG. 2 is a diagram showing an integrated circuit failure position of an integrated circuit repairing device based on a focused ion beam localization method
  • 3 is a positioning device for repairing an integrated circuit according to an embodiment of the present application.
  • FIG. 4 is a diagram of an integrated circuit failure location positioned in accordance with an embodiment of the present application.
  • FIG. 1 is a structural view of an integrated circuit repairing apparatus based on a focused ion beam localization method.
  • the liquid ion source 10 (usually metal gallium Ga) is focused and accelerated by the absorber 11, the extraction and acceleration system 12, and the ion beam focusing system 13 into a high-energy, high-density ion beam that is bombarded on the integrated circuit sample.
  • Some secondary electrons are emitted, and the secondary electron detector 14 collects the surface secondary electrons and images them, thereby obtaining the surface topography of the integrated circuit, and analyzing and finding the failure point, and then repairing with the ion beam.
  • the above integrated circuit repairing device based on the focused ion beam localization method has the following disadvantages: 1. In the process of positioning the failure point, the electron beam or the ion beam is required to generate secondary electron imaging on the surface of the sample, so that the sample surface is observed when the sample is observed. The damage is not observed for a long time, thereby reducing the success rate of the failure positioning, thereby reducing the repair efficiency of the integrated circuit. 2, in the process of failure point positioning, only the surface of the sample can be located, the detection depth is only tens of nanometers.
  • the layer thickness reaches 1um or more, and the high-speed electron cannot penetrate, and cannot The potential difference is formed, and the sample morphology is all gray under the focused ion beam (as shown in FIG. 2), so the internal circuit of the sample cannot be accurately positioned, and the success rate of the failure positioning is reduced, thereby reducing the repair efficiency of the integrated circuit.
  • the embodiment of the present application provides a positioning device and method for repairing an integrated circuit, which utilizes the characteristic that the semiconductor silicon has a very low blocking ratio to near infrared rays.
  • the semiconductor silicon is opaque in the visible light band, in the near infrared region, the semiconductor silicon is Light transmission performance is better. Therefore, when the near-infrared laser illuminates the integrated circuit, imaging can be performed through the semiconductor.
  • near-infrared rays are non-polluting, non-destructive, and very fast in detecting samples, and can be repeatedly tested.
  • the integrated circuit repaired positioning device comprises an infrared imaging positioning unit and an integrated circuit repairing unit.
  • the infrared imaging positioning unit performs a failure point location on the integrated circuit under test by a near-infrared imaging method; the integrated circuit repairing unit is configured to perform circuit repair on the failure point.
  • the integrated circuit repair unit uses a focused ion beam repair machine for failure point repair in practical applications.
  • the integrated circuit repair unit may include a liquid ion source 10, a sinker 11, an extraction and acceleration system 12, and an ion beam focusing system 13.
  • the liquid ion source 10 (usually metal gallium Ga) is focused and accelerated by the absorber 11, the extraction and acceleration system 12, and the ion beam focusing system 13 to accelerate the repair of the integrated circuit failure point by the high energy and high density ion beam.
  • the ion beam acts on the integrated circuit sample to bombard some secondary electrons, and the secondary electron detector 14 collects the surface secondary electrons and images, thereby obtaining the surface topography of the integrated circuit to analyze and find the failure point.
  • the infrared imaging positioning unit comprises: a near-infrared laser beam generating device configured to generate a near-infrared laser beam;
  • a movable work station configured to place and move the integrated circuit under test to implement scanning of the integrated circuit under test by the near-infrared laser beam;
  • a near-infrared receiving processing unit configured to receive near-infrared rays reflected by the integrated circuit and convert the near-infrared optical signal into an electrical signal
  • a computer electrically connected to the movable workbench and the near-infrared receiving processing unit, configured to control movement of the movable table; and configured to receive and process an electrical signal of the near-infrared receiving processing unit Generating internal circuit imaging information of the integrated circuit under test and locating the failure point.
  • the near-infrared laser beam generating device includes: a near-infrared laser configured to emit linearly polarized near-infrared rays; and a near-infrared focusing system configured to focus the linearly polarized near-infrared rays to generate a diameter Micron-scale near-infrared laser beam.
  • the near infrared radiation receiving processing unit includes:
  • a near infrared lens configured to receive near infrared rays reflected by the integrated circuit under test
  • the near infrared ray array is connected to the near-infrared lens and configured to convert the near-infrared light signal reflected by the integrated circuit under test into an electrical signal.
  • the infrared imaging positioning unit includes a sample stage 20 (ie, a movable table), a near-infrared laser 21, and a focusing system 22 (ie, near-infrared focusing). System), near-infrared lens 23, near-infrared array 24, and computer 25.
  • the near-infrared laser 21 emits linearly polarized near-infrared light; the near-infrared lens 23 and the near-infrared array 24 can be used as the near-infrared receiving processing unit in the present embodiment.
  • the near-infrared laser 21 emits near-infrared light having a wavelength of 1.3 ⁇ m.
  • the near-infrared light is concentrated by the focusing system 22, and is bundled into a fine beam having a beam waist diameter of only several tens of micrometers.
  • the micro-beam is incident on the integrated circuit sample, and the computer 25 controls the sample stage 20 to drive the sample. Move to achieve a fine beam focus for fully automated scanning of the inside of the sample.
  • the near-infrared lens 23 receives the near-infrared rays reflected by the sample, and the near-infrared array 24 converts the near-infrared light signal into an electrical signal and sends it to the computer 25 for near-infrared imaging.
  • the near infrared array 24 can be implemented by an indium gallium arsenide (InGaAs) detector.
  • InGaAs indium gallium arsenide
  • the embodiment of the present application further provides a positioning method for integrated circuit repair.
  • the positioning method of the integrated circuit repair includes:
  • Step 11 scanning the front or back of the integrated circuit under test by a near-infrared laser beam
  • Step 12 collecting near-infrared rays reflected during scanning of the near-infrared laser beam
  • Step 13 performing photoelectric information processing on the reflected near infrared rays to obtain an internal circuit structure of the integrated circuit under test;
  • Step 14 Observing the internal circuit structure to find the failure point of the integrated circuit under test; and performing circuit repair on the observed failure point.
  • the method before performing step 11, the method further comprises: focusing the linearly polarized near infrared rays to obtain the near infrared laser beam.
  • the circuit repairing the observed failure point includes: performing circuit repair by using a method of focused ion beam repair.
  • FIG. 4 is a diagram of a failed location positioned in accordance with an embodiment of the present application.
  • the failure position and the failure position shown in FIG. 2 are the same failure position of the same integrated circuit sample to be tested. It can be clearly seen that the failure position map positioned in this embodiment can obtain a clear internal structure of the integrated circuit.
  • the positioning device and method for repairing integrated circuits of the embodiments of the present application have no damage to the sample by near-infrared imaging, and the near-infrared rays can penetrate the semiconductor silicon material to obtain a relatively clear internal structure of the integrated circuit.
  • the efficiency of the integrated circuit repair is greatly improved.

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Abstract

本申请实施例公开了一种集成电路修补的定位装置及方法。该集成电路修补装置包括红外成像定位单元和集成电路修补单元；红外成像定位单元配置为通过近红外线成像的方法对被测的集成电路进行失效点定位；集成电路修补单元配置为对所述失效点进行电路修补。

Description

集成电路修补的定位装置及方法
相关申请的交叉引用
本申请基于申请号为201810456357.9、申请日为2018年5月14日的中国专利申请提出，并要求该中国专利申请的优先权，该中国专利申请的全部内容在此以引入方式并入本申请。
技术领域
本申请涉及集成电路领域，特别涉及一种集成电路修补的定位装置及方法。
背景技术
自1947年发明固体晶体管之后开始兴起半导体产业，紧接着是硅材料和集成电路的发展。集成电路将多个元件结合在一块芯片上提高芯片的性能并降低了成本。由此整个产业进入了集成电路时代，现今我们处于甚大规模集成电路(ULSI，Ultra Large-Scale Integration)时代。随着集成电路线宽的不断下降，元件数目的不断增加，半导体芯片日益复杂，可靠性要求更加提高。与可靠性息息相关的失效分析技术变得越来越重要。
失效分析技术就是通过对集成电路进行定位并进行观察找出失效点，这些失效点是可能造成集成电路断路或短路的点，找出失效点之后进行电路修补。目前，电路失效分析过程中进行集成电路定位的方法是通过采用被动式电压衬度技术，集成电路无外加偏压，利用扫描电子显微镜的电子束或聚焦离子束在集成电路样品表面扫描，由表面不同部位不同电势表现出来的明暗亮度对比来进行失效定位。而这种方式具有如下缺点：
1，在失效点定位过程中，需要电子束或离子束对样片表面轰击产生二 次电子成像，因此观察样品时会对样品表面有所损伤，不可长时间观察因而降低了失效定位成功率，进而降低了集成电路的修补效率。
2，在失效点定位过程中，只能定位样品表面，探测深度只有几十纳米，当芯片顶层采用重新布线工艺或者平坦化工艺时，其层厚达到1um以上，高速电子无法穿透，且无法形成电势差，样品形貌在聚焦离子束下观察全部为灰色(如图2所示)，因此无法准确定位到样品内部电路，降低了失效定位成功率，进而降低了集成电路的修补效率。
发明内容
本申请实施例的目的在于提供一种集成电路修补的定位装置及方法，能够对集成电路无损伤地进行失效点的快速精准定位且能够观察到集成电路的内部结构，提高失效定位成功率，提高集成电路的修补效率。
为实现上述目的，本申请实施例提供了一种集成电路修补的定位装置，该装置包括红外成像定位单元和集成电路修补单元。红外成像定位单元用于对被测的集成电路进行失效点定位。集成电路修补单元用于对所述失效点进行电路修补。
在一可选的实施方式中，所述红外成像定位单元包括近红外激光束产生装置、可移动工作台、近红外线接收处理单元以及计算机。近红外激光束产生装置用于产生近红外激光束。可移动工作台用于放置和移动被测集成电路从而实现所述近红外激光束对所述被测集成电路的扫描。近红外线接收处理单元用于接收所述集成电路反射的近红外线并将所述近红外线的光信号转化为电信号。计算机与所述可移动工作台以及所述近红外线接收处理单元均电性连接，用于控制所述可移动工作台移动，还用于接收和处理所述近红外线接收处理单元的电信号从而生成所述被测集成电路的内部电路的成像信息。
在一可选的实施方式中，所述近红外激光束产生装置包括：近红外激 光器、近红外线聚焦系统。近红外激光器用于发出线偏振的近红外线。近红外线聚焦系统用于将所述线偏振的近红外线聚焦从而产生直径达微米级的近红外激光束。
在一可选的实施方式中，所述线偏振的近红外线的波长为1.3微米。
在一可选的实施方式中，所述近红外线接收处理单元包括：近红外线镜头、近红外线阵。近红外线镜头用于接收所述被测集成电路反射的近红外线。近红外线阵与所述近红外镜头相连，用于将所述被测集成电路反射的近红外线的光信号转化为电信号。
在一可选的实施方式中，所述近红外线阵选用铟砷化镓探测器。
在一可选的实施方式中，所述集成电路修补单元采用聚焦离子束修补方法对所述被测集成电路的失效点进行修补。
本申请实施例还提供了一种集成电路修补的定位方法，包括以下内容：近红外激光束扫描被测集成电路的正面或背面；收集所述近红外激光束扫描过程中反射的近红外线；对所述反射的近红外线进行光电信息处理从而获得所述被测集成电路的内部电路结构；观察内部电路结构找到所述被测集成电路的失效点；进行电路修补。
在一可选的实施方式中，所述集成电路修补方法还包括：将线偏振的近红外线聚焦获得所述近红外激光束。
在一可选的实施方式中，采用聚焦离子束进行电路修补。
与现有技术相比，根据本申请实施例的集成电路修补的定位装置及方法具有如下有益效果：
本申请实施例的集成电路修补的定位装置及方法，能够对集成电路无损伤地进行失效点的快速精准定位且能够观察到集成电路的内部结构，提高失效定位成功率，提高集成电路的修补效率；
利用近红外线可以穿透半导体材料的特性以及对被测样品可以快速无 损、可多次重复测试的特点，通过近红外激光束照射被测的集成电路上，再通过近红外线接收处理单元进行接收和处理反射的近红外线，将近红外线光信号转化为电信号送入计算机进行处理最后生成被测集成电路的成像信息，能够获得清楚的被测集成电路的内部结构。整个过程可以多次重复进行的，可长时间观察被测集成电路，精准定位失效点然后进行修补，因此所述基于红外成像定位法的集成电路修补装置及方法大大提高了失效定位成功率和修补效率。
附图说明
图1是一种基于聚焦离子束定位法的集成电路修补装置的结构图；
图2是一种基于聚焦离子束定位法的集成电路修补装置所定位到的一张集成电路失效位置图；
图3是根据本申请一实施方式的集成电路修补的定位装置；
图4是根据本申请一实施方式定位的一张集成电路失效位置图。
具体实施方式
在对本申请实施例的集成电路修补的定位装置及方法进行详细说明之前，首先对目前一种集成电路修补方式进行简单说明。
图1是一种基于聚焦离子束定位法的集成电路修补装置的结构图。通过吸极11、抽极与加速系统12以及离子束聚焦系统13将液态离子源10(通常选用金属镓Ga)聚焦加速为高能高密度的离子束，该离子束作用在集成电路样品上会轰击出一些二次电子，二次电子探测器14收集表面二次电子并成像，从而获得集成电路的表面形貌，分析找到失效点之后，利用离子束进行修补。
上述基于聚焦离子束定位法的集成电路修补装置有如下缺点：1，在失效点定位过程中，需要电子束或离子束对样片表面轰击产生二次电子成像， 因此观察样品时会对样品表面有所损伤，不可长时间观察因而降低了失效定位成功率，进而降低了集成电路的修补效率。2，在失效点定位过程中，只能定位样品表面，探测深度只有几十纳米，当芯片顶层采用重新布线工艺或者平坦化工艺时，其层厚达到1um以上，高速电子无法穿透，且无法形成电势差，样品形貌在聚焦离子束下观察全部为灰色(如图2所示)，因此无法准确定位到样品内部电路，降低了失效定位成功率，进而降低了集成电路的修补效率。
基于此，提出本申请以下各实施例。
需要说明的是，集成电路修补方式仅仅旨在增加对本申请实施例的总体背景的理解，而不应当被视为承认或以任何形式暗示该信息构成已为本领域一般技术人员所公知的现有技术。
下面结合附图，对本申请的具体实施方式进行详细描述，但应当理解本申请的保护范围并不受具体实施方式的限制。
除非另有其它明确表示，否则在整个说明书和权利要求书中，术语“包括”或其变换如“包含”或“包括有”等等将被理解为包括所陈述的元件或组成部分，而并未排除其它元件或其它组成部分。
本申请实施例提供了一种集成电路修补的定位装置及方法，利用半导体硅对近红外线的阻挡率非常弱的特性，虽然半导体硅在可见光波段是不透明，但在近红外区域中，半导体硅的透光性能却比较好。因此，当近红外激光照射集成电路时，可以透过半导体进行成像。另外近红外线在进行样品检测时无污染，无破坏性并且检测速度非常快，可以多次重复检测。
图3是根据本申请一实施方式的集成电路修补的定位装置。可选地，该集成电路修补的定位装置包括红外成像定位单元和集成电路修补单元。红外成像定位单元通过近红外线成像的方法对被测的集成电路进行失效点定位；集成电路修补单元配置为对所述失效点进行电路修补。
可选地，所述集成电路修补单元实际应用中采用聚焦离子束修补机台进行失效点修补。作为一种实施方式，如图3所示，所述集成电路修补单元可包括液态离子源10、吸极11、抽极与加速系统12以及离子束聚焦系统13。通过吸极11、抽极与加速系统12以及离子束聚焦系统13将液态离子源10(通常选用金属镓Ga)聚焦加速为高能高密度的离子束进行集成电路失效点的修补。其中，离子束作用在集成电路样品上会轰击出一些二次电子，二次电子探测器14收集表面二次电子并成像，从而获得集成电路的表面形貌，以分析找到失效点。
可选地，所述红外成像定位单元包括：近红外激光束产生装置，配置为产生近红外激光束；
可移动工作台，配置为放置和移动被测集成电路从而实现所述近红外激光束对所述被测集成电路的扫描；
近红外线接收处理单元，配置为接收所述集成电路反射的近红外线并将所述近红外线的光信号转化为电信号；以及
计算机，与所述可移动工作台以及所述近红外线接收处理单元均电性连接，配置为控制所述可移动工作台移动；还配置为接收和处理所述近红外线接收处理单元的电信号从而生成所述被测集成电路的内部电路成像信息并定位失效点。
作为一种实施方式，所述近红外激光束产生装置包括：近红外激光器，配置为发出线偏振的近红外线；以及近红外线聚焦系统，配置为将所述线偏振的近红外线聚焦从而产生直径达微米级的近红外激光束。
作为一种实施方式，所述近红外线接收处理单元包括：
近红外线镜头，配置为接收所述被测集成电路反射的近红外线；以及
近红外线阵，与所述近红外镜头相连，配置为将所述被测集成电路反射的近红外线的光信号转化为电信号。
本实施例中，在一可选实施例中，如图3所示，所述红外成像定位单元包括样品台20(即可移动工作台)、近红外激光器21、聚焦系统22(即近红外线聚焦系统)、近红外线镜头23、近红外线阵24和计算机25。其中，近红外激光器21发出线偏振的近红外光；所述近红外线镜头23和所述近红外线阵24可作为本实施例中的近红外线接收处理单元。
可选地，近红外激光器21发出的近红外光的波长为1.3微米。
本实施例中，近红外光经过聚焦系统22进行聚束，聚束为束腰直径大小只有几十微米的微细光束，将此微细光束射入集成电路样品上，计算机25控制样品台20带动样品移动从而实现微细光束焦点对样品内部进行全自动扫描。在扫描过程中，近红外线镜头23接收样品反射的近红外线，近红外线阵24将近红外线光信号转化为电信号发送给计算机25进行近红外成像。可选地，所述近红外线阵24可通过铟砷化镓(InGaAs)探测器实现。
本申请实施例还提供了一种集成电路修补的定位方法。在一可选的实施例中，所述集成电路修补的定位方法包括：
步骤11：通过近红外激光束扫描被测集成电路的正面或背面；
步骤12：收集所述近红外激光束扫描过程中反射的近红外线；
步骤13：对所述反射的近红外线进行光电信息处理从而获得所述被测集成电路的内部电路结构；
步骤14：观察内部电路结构找到所述被测集成电路的失效点；以及对观察到的失效点进行电路修补。
在本申请的一种可选实施例中，在执行步骤11之前，所述方法还包括：将线偏振的近红外线聚焦获得所述近红外激光束。
在本申请的一种可选实施例中，针对步骤14，所述对观察到的失效点进行电路修补，包括：采用聚焦离子束修补的方法进行电路修补。
图4是根据本申请一实施方式定位的一张失效位置图。该失效位置与 图2所示的失效位置为同一个被测集成电路样品的同一处失效位置，明显可以看出，本实施方式定位到的这张失效位置图能够获取清晰的集成电路内部结构。
综上，本申请实施例的集成电路修补的定位装置及方法通过近红外线成像，没有对样品产生伤害，而且近红外线可以穿透半导体硅材料从而获得较为清晰的集成电路的内部结构，在失效分析时，可快速精准地进行失效位置定位，大大提高了集成电路修补的效率。
前述对本申请的具体示例性实施方案的描述是为了说明和例证的目的。这些描述并非想将本申请限定为所公开的精确形式，并且很显然，根据上述教导，可以进行很多改变和变化。对示例性实施例进行选择和描述的目的在于解释本申请的特定原理及其实际应用，从而使得本领域的技术人员能够实现并利用本申请的各种不同的示例性实施方案以及各种不同的选择和改变。本申请的范围意在由权利要求书及其等同形式所限定。

Claims (10)

  1. 一种集成电路修补的定位装置，包括：
    红外成像定位单元，配置为通过近红外线成像的方法对被测的集成电路进行成像并定位失效点；以及
    集成电路修补单元，配置为对所述失效点进行电路修补。
  2. 根据权利要求1所述的集成电路修补的定位装置，其中，所述红外成像定位单元包括：
    近红外激光束产生装置，配置为产生近红外激光束；
    可移动工作台，配置为放置和移动被测集成电路从而实现所述近红外激光束对所述被测集成电路的扫描；
    近红外线接收处理单元，配置为接收所述集成电路反射的近红外线并将所述近红外线的光信号转化为电信号；以及
    计算机，与所述可移动工作台以及所述近红外线接收处理单元均电性连接，配置为控制所述可移动工作台移动；还配置为接收和处理所述近红外线接收处理单元的电信号从而生成所述被测集成电路的内部电路成像信息并定位失效点。
  3. 根据权利要求2所述的集成电路修补的定位装置，其中，所述近红外激光束产生装置包括：
    近红外激光器，配置为发出线偏振的近红外线；以及
    近红外线聚焦系统，配置为将所述线偏振的近红外线聚焦从而产生直径达微米级的近红外激光束。
  4. 根据权利要求3所述的集成电路修补的定位装置，其中，所述线偏振的近红外线的波长为1.3微米。
  5. 根据权利要求2所述的集成电路修补的定位装置，其中，所述近红外线接收处理单元包括：
    近红外线镜头，配置为接收所述被测集成电路反射的近红外线；以及
    近红外线阵，与所述近红外镜头相连，配置为将所述被测集成电路反射的近红外线的光信号转化为电信号。
  6. 根据权利要求5所述的集成电路修补的定位装置，其中，所述近红外线阵通过铟砷化镓探测器实现。
  7. 根据权利要求1所述的集成电路修补的定位装置，其中，所述集成电路修补单元采用聚焦离子束修补方法对所述被测集成电路的失效点进行修补。
  8. 一种集成电路修补的定位方法，包括以下步骤：
    通过近红外激光束扫描被测集成电路的正面或背面；
    收集所述近红外激光束扫描过程中反射的近红外线；
    对所述反射的近红外线进行光电信息处理从而获得所述被测集成电路的内部电路结构；
    观察内部电路结构找到所述被测集成电路的失效点；以及
    对观察到的失效点进行电路修补。
  9. 根据权利要求8所述的集成电路修补的定位方法，其中，所述集成电路修补方法还包括：
    将线偏振的近红外线聚焦获得所述近红外激光束。
  10. 根据权利要求8所述的集成电路修补的定位方法，其中，所述进行电路修补的方法是采用聚焦离子束修补的方法。
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