WO2019218765A1 - 腔室组件及反应腔室 - Google Patents

腔室组件及反应腔室 Download PDF

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Publication number
WO2019218765A1
WO2019218765A1 PCT/CN2019/077824 CN2019077824W WO2019218765A1 WO 2019218765 A1 WO2019218765 A1 WO 2019218765A1 CN 2019077824 W CN2019077824 W CN 2019077824W WO 2019218765 A1 WO2019218765 A1 WO 2019218765A1
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WIPO (PCT)
Prior art keywords
electrode plate
chamber assembly
flow
diameter
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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PCT/CN2019/077824
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English (en)
French (fr)
Inventor
师帅涛
丁安邦
陈鹏
史小平
李春雷
兰云峰
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Priority to KR1020207029179A priority Critical patent/KR102439759B1/ko
Publication of WO2019218765A1 publication Critical patent/WO2019218765A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515

Definitions

  • the present invention relates to the field of semiconductor manufacturing technology, and in particular to a chamber assembly and a reaction chamber.
  • ALD Atomic layer deposition
  • the reactant gases are continuously passed into the reaction chamber carrying the substrate.
  • a PEALD (Plasma Enhanced Atomic Layer Deposition) process is generally used, which can further expand the type of the reaction precursor compared to the conventional ALD process, and the plasma is higher.
  • the activity can lower the temperature of the entire reaction chamber and increase the deposition rate.
  • FIG. 1 is a cross-sectional view of a prior chamber assembly.
  • the chamber assembly includes an electrode plate 3, a flow plate 4 and an air inlet nozzle 1, wherein the electrode plate 3 is electrically connected to the RF power source 6 through a matching device 5.
  • the electrode plate 3 and the vortex plate 4 are stacked to form a uniform flow space.
  • the gas inlet nozzle 1 extends upward to the outside of the reaction chamber, extends downward to the electrode plate 3, and corresponds to the gas inlet 2 of the gas inlet 1 and is opened in the electrode plate 3 along its thickness direction.
  • the electrode plate 3 and the shimming plate 4 in the chamber assembly are both made of a conductive material and the two are directly stacked together, when the RF voltage is applied to the electrode plate 3, the shimming plate 4 is also The RF voltage is loaded, which may cause the gas in the air outlet of the vortex plate 4 to be ionized to form a plasma, which easily causes the hollow cathode to discharge, causing instability of the radio frequency system and affecting the stability of the plasma.
  • the structural design of the gas inlet nozzle 1 is also likely to cause the interior of the gas delivery pipe that is in contact with the gas inlet nozzle 1 to ignite and ignite, and ultimately affect the stability of the plasma.
  • the present invention aims to at least solve one of the technical problems existing in the prior art, and proposes a chamber assembly and a reaction chamber which can avoid generation of a hollow cathode discharge, thereby improving plasma stability.
  • a chamber assembly is provided for the purpose of the present invention, comprising:
  • An electrode plate for electrically connecting to a radio frequency source, and an air inlet is disposed in the electrode plate;
  • a flow concentrating member made of an insulating material, and a flow space formed between the flow absorbing member and the electrode plate, wherein the air inlet communicates with the shimming space, and the convection flow
  • a plurality of air outlets are provided in the component.
  • the electrode plates have different thicknesses in the radial direction thereof.
  • the upper surface of the electrode plate is a flat surface; and in the radial direction of the electrode plate, the thickness of the electrode plate gradually increases from a center to an edge thereof.
  • the flow dividing member is divided into a plurality of partitions along a radial direction thereof; and the outlets of the plurality of partitions have different diameters.
  • the merging component is divided into two partitions, respectively a central partition and an edge partition located around the central partition; a diameter of the air outlet in the central partition is smaller than a location in the edge partition Describe the diameter of the port.
  • the diameter of the central partition is less than or equal to one third of an outer diameter of the edge partition.
  • the diameter of the air outlet in the central partition ranges from 1 mm to 2.5 mm; and the diameter of the air outlet in the edge partition ranges from 2.6 mm to 5 mm.
  • the flow-rancing component comprises a flow-flow plate provided with the gas outlet, and the thickness of the flow-flow plate ranges from 2 mm to 6 mm.
  • a conveying pipeline and an insulating member wherein the insulating member is located between the conveying pipeline and the electrode plate, and an intake passage is provided in the insulating member, the intake air Channels are in communication with the delivery line and the inlet port, respectively.
  • the intake passage includes a first through hole and a second through hole, wherein the second through hole is plural and disposed around the first through hole.
  • the diameter of the second through hole is smaller than the diameter of the first through hole.
  • the diameter of the first through hole ranges from 20 mm to 30 mm; and the diameter of the second through hole ranges from 1 mm to 3 mm.
  • the length of the insulating member in a direction perpendicular to the electrode plate is not less than 40 mm.
  • a heating assembly is further included, the heating assembly being disposed at a top of the electrode plate and disposed circumferentially around the electrode plate.
  • grounding shield and the annular upper cover are further included, wherein
  • the flow distributing member is mounted on an inner side of the annular upper cover
  • the shield is disposed at the top of the annular upper cover and cooperates with the annular upper cover to cover the electrode plate and the heating assembly therein.
  • the present invention also provides a reaction chamber, comprising:
  • the chamber assembly being disposed at a top of the cavity;
  • a confinement ring disposed in the cavity for confining the distribution of the plasma.
  • the present invention provides a chamber assembly which is made of different materials and which is made of an insulating material, which makes the flow-flow component not be loaded when the RF voltage is applied to the electrode plate.
  • There is a radio frequency voltage so that the gas in the gas outlet of the flow dividing member can be prevented from being ionized to form a plasma, thereby avoiding the problem of hollow cathode discharge, thereby improving the stability of the plasma.
  • the present invention provides a reaction chamber that avoids the generation of a hollow cathode discharge by employing the above-described chamber assembly provided by the present invention, thereby improving plasma stability.
  • Figure 1 is a cross-sectional view of a conventional chamber assembly
  • FIG. 2 is a cross-sectional view of a chamber assembly according to an embodiment of the present invention.
  • 3A is a top plan view of an insulating member used in an embodiment of the present invention.
  • Figure 3B is a cross-sectional view taken along line A-A of Figure 3A;
  • FIG 4 is a cross-sectional view of a reaction chamber provided by an embodiment of the present invention.
  • a chamber assembly includes an electrode plate 8 and a flow concentrating component 9 , wherein the electrode plate 8 is electrically connected to a radio frequency source, and an air inlet is disposed in the electrode plate 8 .
  • the port 81 is used for conveying the process gas;
  • the flow dividing member 9 is made of an insulating material, and together with the electrode plate 8, constitutes a flow space 10, and the air inlet 81 communicates with the flow space 10, and is disposed on the flow dividing member 9.
  • the flow regulating member 9 is not loaded with the radio frequency voltage when the RF voltage is applied to the electrode plate 8. Therefore, it is possible to prevent the gas in the gas outlet 91 of the flow dividing member 9 from being ionized to form a plasma, thereby generating a hollow cathode discharge problem, thereby improving plasma stability.
  • the insulating material is preferably polyetheretherketone (PEEK), polyetherimide (ULTEM) or the like. This material has a lower probability (recombination rate) for the plasma to return to the original state from the excited state, thereby reducing the risk of ignition and sparking inside the gas outlet of the flow-flowing component and ensuring the stability of the plasma.
  • PEEK polyetheretherketone
  • ULTEM polyetherimide
  • the thickness of the electrode plate 8 in its radial direction i.e., the X direction shown in Fig. 2
  • the thickness of the electrode plate 8 in the Y direction shown in Fig. 2 is different.
  • the thickness of the electrode plates 8 is different corresponding to different regions in the radial direction of the reaction chamber, so that the electric field distribution in the reaction chamber tends to be uniform, so that the uniformity of distribution of the plasma in the radial direction of the reaction chamber can be improved.
  • the electric field intensity of the central portion of the reaction chamber is larger than the electric field strength of the edge portion, and the electrode plate 8 is set to be thin and marginal in the middle. Thick, specifically, the upper surface 82 of the electrode plate 8 is flat; and in the radial direction of the electrode plate 8, the thickness of the electrode plate 8 gradually increases from the center to the edge thereof, in other words, the lower surface 83 of the electrode plate 8 is a dome A curved surface that is recessed toward the upper surface 82.
  • the thickness of the electrode plate 8 gradually increases from the center to the edge, and the magnitude of the impedance gradually increases from the center to the edge of the electrode plate 8, thereby compensating for the difference in the distribution of the electric field in the radial direction of the reaction chamber, thereby improving The uniformity of distribution of the plasma in the radial direction of the reaction chamber.
  • the lower surface 82 of the electrode plate 8 can take a different shape so that the plasma distribution in the radial direction of the reaction chamber meets the process requirements.
  • the distribution of plasma in the radial direction of the reaction chamber is required to be uniform, and the lower surface 82 of the electrode plate 8 may adopt the shape described in this embodiment, or may be uniform in plasma distribution.
  • Any other shape causes the lower surface of the electrode plate 8 to assume a vertebral shape (the projection of which is a triangle on the plane in which the central axis of the electrode plate 8 is located), and the frustum shape (which is located at the central axis of the electrode plate 8)
  • the projection on the plane is trapezoidal), and so on.
  • the lower surface of the electrode plate 8 is rendered to be a twist similar to a wave shape. Shaped or curved.
  • the upper surface of the electrode plate 8 it may have a planar shape or other shapes as long as it cooperates with the lower surface so that the thickness at each position of the electrode plate 8 satisfies the process requirements.
  • the flow equalizing member 9 is divided into a plurality of sections along its radial direction (parallel to the X direction in FIG. 2), and the diameters of the air outlets 911 in the plurality of partitions are different to adjust the radial differences of the corresponding reaction chambers.
  • the difference in airflow distribution at the area can improve the uniformity of the distribution of the plasma on the surface of the workpiece to be processed, thereby improving the process results.
  • the gas flow rate difference between the central region and the edge region of the reaction chamber that is, the gas flow rate in the central region of the reaction chamber is greater than the gas flow rate in the edge region
  • the flow dividing member 9 is divided into two partitions. , respectively, a central partition and a circular edge partition located around the central partition, and the diameter of the air outlet 911 in the central partition is smaller than the diameter of the air outlet 911 in the edge partition, thereby compensating for the central area and the edge of the reaction chamber The difference in gas flow between the two regions.
  • the diameter of the air outlet 911 in the central section ranges from 1 mm to 2.5 mm, so as to ensure that the airflow of the air outlet in the central partition meets the process requirements, and the air outlet in the central partition can be appropriately reduced.
  • the gas flow rate; the diameter of the air outlet 911 in the edge section ranges from 2.6 mm to 5 mm, so as to ensure that the airflow of the air outlet in the edge partition is not excessively large, and the edge partition can be appropriately increased.
  • the gas flow rate in the air outlet is particularly, the diameter of the air outlet 911 in the central section.
  • the diameter D1 of the central partition is less than or equal to one third of the outer diameter D2 of the edge partition, so as to ensure that the air flow rate of the air outlet in the central partition and the edge partition meets the process requirements, and the reaction chamber can be reduced.
  • the flow dividing member 9 may be divided into more partitions, for example, 3 to 5, from the center of the flow concentrating member 9 in the radial direction of the reaction chamber, and the partitions are nested with each other.
  • the partitions are nested with each other, and any other manner of dividing the regions as long as the airflow distribution uniformity can be improved.
  • the flow equalizing member 9 includes a continuous flow plate 91 and a mounting ring 92, wherein the flow plate 91 is disposed at the top of the reaction chamber, and the gas outlet 911 is disposed on the flow plate 91; Ring 92 is used to secure the flow plate 91 to the reaction chamber.
  • the thickness of the flow plate 91 ranges from 2 mm to 6 mm. It should be noted that the so-called "connected" may be that the vortex plate 91 and the mounting ring 92 are integrally formed to be integrated, or the vortex plate 91 and the mounting ring 92 may be separately formed and then fixed. And realize the connection.
  • the chamber assembly further includes a delivery line 13 and an insulating member 12, wherein the delivery line 13 is for conveying process gas from the process gas delivery line 142, and the inlet end thereof is used for the chamber
  • the cleaned remote plasma source 141 is connected, and its outlet end is connected to the insulating member 12.
  • the insulating member 12 is located between the conveying pipe 13 and the electrode plate 8 for electrically insulating the conveying pipe 13 from the electrode plate 8.
  • an intake passage 121 is provided, and the intake passage 121 is respectively connected to the conveying pipe
  • the path 13 is in communication with the air inlet 81 such that the process gas supplied from the process gas delivery line 142 enters the flow space 10 via the delivery line 13, the intake passage 121 and the intake port 81 in sequence.
  • the conveying line 13 can be electrically insulated from the electrode plate 8, and at the same time, the insulating distance between the two can be increased by the insulating member 12 having a certain length in the direction perpendicular to the electrode plate 8. The greater the insulation distance, the less the risk of sparking in the air inlets in the electrode plate 8, so that system stability can be improved.
  • the length of the insulating member 12 in the direction perpendicular to the electrode plate 8 is not less than 40 mm, so that it is possible to ensure an appropriate insulation distance between the transmission line 13 and the electrode plate 8 and not to be insulated by the insulating member 12.
  • the length in the direction perpendicular to the electrode plate 8 is too long to cause the overall size of the device to be excessive.
  • the length of the insulating member 12 in the direction perpendicular to the electrode plate 8 is not less than 40 mm, preferably 40 mm to 60 mm.
  • the intake passage includes a first through hole 121 and a second through hole 122 , wherein the second through hole 122 is plural and disposed around the first through hole 121 .
  • the diameter of the first through hole 121 can be appropriately reduced, and at the same time, with the aid of the second through hole 122, the flow rate of the process gas can be ensured. Claim.
  • the smaller the diameter of the first through hole 121 the smaller the risk of generating plasma therein, so that the risk of sparking can be reduced and the plasma stability in the reaction chamber can be improved.
  • the diameter of the second through hole 122 is smaller than the diameter of the first through hole 121. Since the diameter of the second through hole 122 is small, when the process gas passes through the first through hole 121 and the second through hole 122 at the same time, it can be increased at both ends of the insulating member 12 as compared with the case where the first through hole 121 is separately provided. The difference in air pressure generated between the two, the greater the risk of plasma generation in the through hole, thereby reducing the risk of sparking and improving the plasma stability in the reaction chamber.
  • the diameter of the first through hole ranges from 20 mm to 30 mm; and the diameter of the second through hole 122 ranges from 1 mm to 3 mm. This not only ensures that the flow rate of the process gas meets the requirements, but also reduces the risk of plasma generation in the through holes, thereby reducing the risk of sparking and improving the plasma stability in the reaction chamber.
  • first through hole 121 and the second through hole 122 may be a through hole, a tapered hole, or the like.
  • the insulating member 12 is sealingly connected to the conveying line 13 and the electrode plate 8, respectively, and chamfering is formed at both end portions of the intake passage of the insulating member 12 (for example, as shown in FIG. 3B).
  • the chamfered B) at both ends of the first through hole 121 and the end portions of the conveying pipe 13 and the intake port 81 which are respectively abutted with the intake passage are chamfered.
  • the chamber assembly further includes a heating assembly 17 disposed at the top of the electrode plate 8 and disposed circumferentially around the electrode plate 8 for heating the electrode plate 8.
  • the heating assembly 17 includes a heating wire and an insulating layer covering the heating wire. By means of the insulating layer, it is ensured that the heating wire is electrically insulated from the electrode plate 8.
  • a heating wire made of an insulating medium may also be used, and the heating wire is coated with a heat-resistant layer having good corrosion resistance and thermal conductivity.
  • the material of the insulating layer is preferably aluminum.
  • the heating unit 17 may be fixed to the electrode plate 8 by means of bonding.
  • the heating assembly 17 includes a plurality of sections, and the plurality of sections are arranged at intervals in the circumferential direction of the electrode plate 8.
  • the electrode plate 8 can be uniformly heated, so that heating uniformity can be improved, and process uniformity can be improved.
  • the chamber assembly further includes a radio frequency electrode 11 and a radio frequency source, the radio frequency electrode 11 being columnar and disposed on the top of the electrode plate 8 and located at an edge region of the electrode plate 8.
  • the RF source includes a matcher 15 and a RF power source 16, and the matcher 15 is electrically connected to the RF electrode 11.
  • the chamber assembly further includes a shielded cover 19 and an annular upper cover 18, wherein the flow equalizing member 9 is mounted inside the annular upper cover 18; the shield 19 is disposed on the top of the annular upper cover 18, and
  • the annular upper cover 18 collectively covers the electrode plate 8, the heating assembly 17, and the RF electrode 11 and the like, that is, the cover body formed by the shield cover 19 and the annular upper cover 18 at least surrounds the upper portion and the side portion of the above-mentioned member, thereby Radio leakage is prevented from leaking to the outside of the shield case 19 and the annular upper cover 18.
  • a beryllium copper spring is disposed between the shielding surface of the shield cover 19 and the annular upper cover 18 to ensure the best shielding effect.
  • the chamber assembly includes a plurality of dielectric layers stacked from the inner and outer layers, so that the radio frequency electrode needs to pass through the plurality of dielectric layers to contact the electrode plates, resulting in complicated installation of the radio frequency electrodes, and is prone to occur. Fire between layers.
  • the chamber assembly provided by the present application can replace the arrangement of the plurality of dielectric layers by means of the shield cover 19, so that the RF electrode 11 is directly in contact with the electrode plate 8 without passing through the dielectric layer, thereby simplifying the RF electrode. 11 installation.
  • the RF electrode 11 into direct contact with the electrode plate 8, it is possible to avoid occurrence of interlayer sparking due to the arrangement of a plurality of dielectric layers, thereby improving system stability.
  • the top wall of the shield cover 19 has a flat shape, and the larger the distance D3 between the top wall of the shield cover 19 and the electrode plate 8, the higher the utilization rate of the radio frequency power, and based on this, Large spacing D3 can improve the utilization of RF power.
  • the spacing D3 ranges from 40 mm to 100 mm. This can ensure the utilization of the RF power is improved without causing the overall size of the device to be too large due to the excessive spacing D3.
  • the shield 19 may adopt the shape described in this embodiment, or may adopt any other shape capable of avoiding radio frequency leakage, for example, the shield 19 is dome-shaped or the like.
  • the chamber assembly provided by the embodiment of the invention has the following advantages:
  • the flow equalizing member 9 is made of an insulating material, when the RF voltage is applied to the electrode plate 8, the flow regulating member 9 is not loaded with the radio frequency voltage, so that the air outlet 91 of the flow collecting member 9 can be avoided.
  • the gas is ionized to form a plasma, thereby avoiding the problem of hollow cathode discharge, thereby improving the stability of the plasma.
  • the thickness of the electrode plate 8 is different, so that the electric field distribution in the reaction chamber tends to be uniform, thereby improving the uniformity of plasma distribution in the radial direction of the reaction chamber.
  • the flow dividing member 9 is divided into a central partition and a circular edge partition located around the central partition, and an air outlet 911 in the central partition
  • the diameter is smaller than the diameter of the air outlet 911 in the edge section, so that the difference in gas flow between the central area and the edge area of the reaction chamber can be compensated for.
  • the conveying line 13 can be electrically insulated from the electrode plate 8, and at the same time, the insulation between the two can be increased due to the insulating member 12 having a certain length in the direction perpendicular to the electrode plate 8. The distance can thereby reduce the risk of sparking in the air inlet in the electrode plate 8, thereby improving system stability.
  • the heating assembly 17 includes a heating wire and an insulating layer covering the heating wire.
  • the insulating layer By means of the insulating layer, it is ensured that the heating wire is electrically insulated from the electrode plate 8, so that the risk of ignition can be further reduced.
  • the shield 19 radio frequency leakage can be avoided, and at the same time, instead of the arrangement of the plurality of dielectric layers, the RF electrode 11 can be directly contacted with the electrode plate 8 without passing through the dielectric layer, thereby simplifying the installation of the RF electrode 11.
  • an embodiment of the present invention provides a reaction chamber including the chamber assembly, the cavity 20 and the confinement ring 21 provided by the foregoing embodiments of the present invention.
  • the top of the cavity 20 has an opening, and an exhaust port 201 is disposed at the bottom of the cavity 20.
  • a chamber assembly is disposed on top of the cavity 20.
  • a confinement ring 21 is disposed in the cavity 20 for constraining the distribution of the plasma 25.
  • the base 23 is disposed in the cavity 20 for carrying the workpiece to be processed, and the base 23 is movable up and down, and when the base 23 is raised to the process position as shown in FIG. The bottom opening of the confinement ring 21 is blocked.
  • the plasma 25 is confined above the susceptor 23, confining the space inside the sidewall of the ring 25.
  • an exhaust space 22 is formed between the confinement ring 21 and the cavity 20, and the exhaust space 22 is in communication with the exhaust port 201, and the process residual gas is sequentially discharged from the reaction chamber via the exhaust space 22 and the exhaust port 201.
  • the flow equalizing member 9 is disposed at the top of the confinement ring 21, and closes the top opening of the confinement ring 21, and the gas flowing out from the gas outlet 911 enters the confinement ring 21.
  • a heating rod 24 is also disposed in the cavity 20 for ensuring a constant temperature in the chamber.
  • the heating rods 24 may be plural and evenly distributed along the circumferential direction of the cavity to enable uniform heating of the cavity 20.
  • the reaction chamber may be an Atomic layer deposition (ALD) reaction chamber, or may be a Plasma Enhanced Chemical Vapor Deposition (PECVD) reaction chamber, etc. Wait.
  • ALD Atomic layer deposition
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • the reaction chamber provided by the embodiment of the present invention can not only improve the stability of the plasma but also improve the uniformity of plasma distribution by using the chamber assembly provided by the foregoing embodiments of the present invention.

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Abstract

一种腔室组件，包括：电极板(8)，其用于与射频源(16)电连接，且在电极板(8)中设置有进气口(81)；匀流部件(9)，其采用绝缘材料制作，且与电极板(8)共同构成匀流空间(10)，进气口(81)与匀流空间(10)连通，并且在匀流部件(9)上设置有多个出气口(911)。腔室组件能避免产生空心阴极放电，提高等离子体的稳定性。还提供了一种反应腔室。

Description

腔室组件及反应腔室 技术领域
本发明涉及半导体制造技术领域，具体地，涉及一种腔室组件及反应腔室。
背景技术
在半导体处理领域中，随着电子器件的几何尺寸不断减小以及器件的密集度不断提高，特征尺寸和高宽比变得越来越有挑战性。ALD(Atomic layer deposition，原子层沉积)就是为了应对这种挑战而提出的一种新的薄膜沉积方法。
在进行ALD工艺的过程中，反应气体被连续的通入载有衬底的反应腔中。为了提高反应气体的活性，通常采用PEALD(Plasma Enhanced Atomic Layer Deposition，等离子体增强原子层沉积)工艺，该工艺相对于普通的ALD工艺可以进一步扩充反应前驱体的种类，而且由于等离子体具有更高的活性，可以降低整个反应腔的温度和提高沉积速率。
现有PEALD设备包括反应腔室及设置在反应腔室顶部的腔室组件，该腔室组件用于将射频功率加载至反应腔室及输送工艺气体。具体地，图1为现有的腔室组件的剖视图。请参阅图1，该腔室组件包括电极板3、匀流板4和进气嘴1，其中，电极板3通过匹配器5与射频电源6电连接。电极板3与匀流板4叠置在一起构成匀流空间。如图所示，进气嘴1向上延伸至反应腔室的外部，向下延伸至电极板3，且对应于进气嘴1的进气口2而在电极板3中开设有沿其厚度方向贯通电极板3的气体通道，这样，进气嘴1的进气口2经由该气体通道而与匀流空间连通，以使工艺气体经由进气嘴1的进气口2和电极板3的气体通道进入电极板3与匀流板4构成的匀流空间。并 且，在匀流板4中设置有多个沿其厚度方向贯通匀流板4的出气口，匀流空间经由该出气口与反应腔室连通。
在实际应用中，尽管上述腔室组件常应用于PEALD设备，但是其不可避免地存在以下问题：
其一，由于腔室组件中的电极板3和匀流板4均采用导电材料制作且二者直接叠置在一起，因此，在向电极板3加载射频电压时，匀流板4也会被加载有射频电压，这可能导致在匀流板4的出气口中的气体被电离形成等离子体，从而容易引起空心阴极放电，造成射频系统不稳定，影响等离子体的稳定性。
其二，进气嘴1的结构设计也容易引起与进气嘴1对接的气体输送管道的内部起辉和打火，并最终影响等离子体的稳定性。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提出了一种腔室组件及反应腔室，其可以避免产生空心阴极放电，从而可以提高等离子体的稳定性。
为实现本发明的目的而提供一种腔室组件，包括：
电极板，所述电极板用于与射频源电连接，且在所述电极板中设置有进气口；以及，
匀流部件，所述匀流部件采用绝缘材料制作，且所述匀流部件与所述电极板之间构成匀流空间，所述进气口与所述匀流空间连通，在所述匀流部件中设置有多个出气口。
可选的，所述电极板在其径向上的厚度不同。
可选的，所述电极板的上表面为平面；并且在所述电极板的径向上，所述电极板的厚度自其中心至边缘逐渐增大。
可选的，所述匀流部件沿其径向划分为多个分区；多个所述分区中的所述出气口的直径不同。
可选的，所述匀流部件划分为两个分区，分别为中心分区和位于所述中心分区周围的边缘分区；所述中心分区中的所述出气口的直径小于所述边缘分区中的所述出气口的直径。
可选的，所述中心分区的直径小于或者等于所述边缘分区的外径的三分之一。
可选的，所述中心分区中的所述出气口的直径的取值范围在1mm～2.5mm；所述边缘分区中的所述出气口的直径的取值范围在2.6mm～5mm。
可选的，所述匀流部件包括设有所述出气口的匀流板，所述匀流板的厚度的取值范围在2mm～6mm。
可选的，还包括输送管路和绝缘部件，其中，所述绝缘部件位于所述输送管路和所述电极板之间，且在所述绝缘部件中设置有进气通道，所述进气通道分别与所述输送管路和所述进气口连通。
可选的，所述进气通道包括第一通孔和第二通孔，其中，所述第二通孔为多个，且围绕所述第一通孔设置。
可选的，所述第二通孔的直径小于所述第一通孔的直径。
可选的，所述第一通孔的直径的取值范围在20mm～30mm；所述第二通孔的直径的取值范围在1mm～3mm。
可选的，所述绝缘部件在垂直于所述电极板的方向上的长度不小于40mm。
可选的，还包括加热组件，所述加热组件设置在所述电极板的顶部，且环绕所述电极板的圆周方向设置。
可选的，还包括均接地的屏蔽罩和环形上盖，其中，
所述匀流部件安装在所述环形上盖的内侧；
所述屏蔽罩设置在所述环形上盖顶部，且与所述环形上盖共同将所述电极板和所述加热组件罩在其中。
作为另一个技术方案，本发明还提供一种反应腔室，包括：
本发明提供的上述腔室组件；
腔体，其顶部具有开口，且在所述腔体的底部设置有排气口；所述腔室组件设置在所述腔体的顶部；
约束环，其设置在所述腔体中，用于约束等离子体的分布。
本发明具有以下有益效果：
本发明提供的腔室组件，其将电极板和匀流部件采用不同的材料制作，并且该匀流部件采用绝缘材料制作，这使得在向电极板加载射频电压时，匀流部件不会被加载有射频电压，从而可以避免匀流部件的出气口中的气体被电离形成等离子体，进而可以避免产生空心阴极放电问题，从而可以提高等离子体的稳定性。
本发明提供的反应腔室，其通过采用本发明提供的上述腔室组件，避免产生空心阴极放电，从而可以提高等离子体的稳定性。
附图说明
图1为现有的腔室组件的剖视图；
图2为本发明实施例提供的腔室组件的剖视图；
图3A为本发明实施例采用的绝缘件的俯视图；
图3B为沿图3A中A-A线的剖视图；
图4为本发明实施例提供的反应腔室的剖视图。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图来对本发明提供的腔室组件及反应腔室进行详细描述。
请参阅图2，本发明实施例提供的腔室组件，其包括电极板8和匀流部件9，其中，该电极板8用于与射频源电连接，且在电极板8中设置有进气口81，用于输送工艺气体；匀流部件9采用绝缘材料制作，且与电极板8共同构成匀流空间10，进气口81与该匀流空间10连通，并且在匀流部件9上设置有多个出气口911，该出气口911用于将匀流空间10中的工艺气体输送至反应腔室(图中未示出)中。由此，工艺气体依次经由进气口81、匀流空间10和各个出气口911进入反应腔室。
由于上述电极板8与匀流部件9采用不同的材料制作，并且该匀流部件9采用绝缘材料制作，这使得在向电极板8加载射频电压时，匀流部件9不会被加载有射频电压，从而可以避免匀流部件9的出气口91中的气体被电离形成等离子体，进而产生空心阴极放电问题，从而可以提高等离子体的稳定性。
绝缘材料优选为聚醚醚酮(PEEK)、聚醚酰亚胺(ULTEM)等等。这种材料对等离子体由激发态重新回到原始态的几率(复合率)也较低，从而可以降低匀流部件的出气口内部起辉和打火的风险，保证等离子体的稳定性。
可选的，电极板8在其径向(即，图2中示出的X方向)上的厚度(即，电极板8在图2中示出的Y方向上的厚度)不同。这样，对应于反应腔室的径向上的不同区域，电极板8的厚度不同，以使反应腔室内的电场分布趋于均匀，从而可以提高等离子体在反应腔室的径向上的分布均匀性。例如，在本实施例中，针对在反应腔室的径向上的电场分布不均匀的情况：反应腔室的中心区域的电场强度大于边缘区域的电场强度，电极板8被设置为中间薄、边缘厚，具体地，电极板8的上表面82为平面；并且在电极板8的径向上，电极板8的厚度自其中心至边缘逐渐增大，换言之，电极板8的下表面83为圆顶形曲面，该圆顶形曲面朝向上表面82凹进。这样，电极板8的厚度自其中心向边缘逐渐增大，其阻抗的大小自电极板8的中心向边缘逐渐增大， 从而可以补偿电场在反应腔室的径向上的分布差异，进而可以提高等离子体在反应腔室的径向上的分布均匀性。
需要说明的是，在实际应用中，有的刻蚀工艺要求被加工工件的表面得到均匀的刻蚀，即，被加工工件的不同区域处的刻蚀深度均匀；有的刻蚀工艺要求被加工工件的表面得到不均匀的刻蚀，即，被加工工件的不同区域处的刻蚀深度不一致。因此，为了适应于被加工工件表面的刻蚀形貌的需要，电极板8的下表面82可以采用不同的形状，以使反应腔室的径向上的等离子体分布满足工艺要求。例如，对于均匀刻蚀的情况，要求等离子体在反应腔室的径向上的分布均匀，电极板8的下表面82可以采用本实施例所述的形状，也可以采用能够使等离子体分布均匀的其他任意形状，比如，使电极板8的下表面呈现为椎体形状(其在电极板8的中心轴所在的平面上的投影成三角形)、锥台形状(其在电极板8的中心轴所在的平面上的投影成梯形)，等等。对于非均匀刻蚀的情况，要求等离子体在反应腔室的径向上的分布根据刻蚀形貌的要求而呈现不均匀状态，比如，使电极板8的下表面呈现为类似于波浪形状的曲折状或者弯曲状。至于电极板8的上表面，其可以为平面形状，也可以为其他形状，只要与下表面配合而使电极板8的各个位置处的厚度满足工艺要求即可。
出气口911的直径越大，则气体的流量越大；反之，出气口911的直径越小，则气体的流量越小。基于此，匀流部件9沿其径向(平行于图2中的X方向)划分为多个分区，多个分区中的出气口911的直径不同，以调节对应反应腔室的径向上的不同区域处的气流分布差异，从而可以提高等离子体在被加工工件表面上的分布均匀性，进而改善工艺结果。
在本实施例中，针对反应腔室的中心区域和边缘区域二者的气体流量差异，即，反应腔室中心区域的气体流量大于边缘区域的气体流量，将匀流部件9划分为两个分区，分别为中心分区和位于该中心分区周围的环形的边缘 分区，并且，中心分区中的出气口911的直径小于边缘分区中的出气口911的直径，从而可以补偿反应腔室的中心区域和边缘区域二者的气体流量差异。优选的，中心分区中的出气口911的直径的取值范围在1mm～2.5mm，这样既能够保证中心分区中的出气口的气流流量满足工艺要求，又能够适当减小中心分区中的出气口的气体流量；所述边缘分区中的出气口911的直径的取值范围在2.6mm～5mm，这样既能够保证边缘分区中的出气口的气流流量不会过大，又能够适当增大边缘分区中的出气口的气体流量。
优选的，中心分区的直径D1小于或者等于边缘分区的外径D2的三分之一，这样既能够保证中心分区和边缘分区中的出气口的气流流量均满足工艺要求，又能够减少反应腔室的中心区域和边缘区域二者的气体流量差异。
当然，在实际应用中，也可以自匀流部件9的中心沿反应腔室的径向将匀流部件9划分为更多的分区，例如3～5个，且这些分区彼此嵌套。当然，也可以不采用各个分区彼此嵌套的方式，而是其他任意划分区域的方式，只要能够实现提高气流分布均匀性即可。
在本实施例中，匀流部件9包括连为一体的匀流板91和安装环92，其中，匀流板91设置在反应腔室的顶部，出气口911设置在匀流板91上；安装环92用于将匀流板91固定于反应腔室。通过使匀流板91和安装环92连为一体，可以提高结构的稳定性。该匀流板91的厚度的取值范围在2mm～6mm。需要说明的是，在此所谓“连为一体”，可以是匀流板91和安装环92一体成型而实现连为一体，也可以是匀流板91和安装环92各自独立成型后再连接固定而实现连为一体。
在本实施例中，腔室组件还包括输送管路13和绝缘部件12，其中，输送管路13用于输送来自工艺气体输送管路142的工艺气体，且其进气端与用于腔室清洗的远程等离子体源141连接，其出气端与绝缘部件12连接。绝缘部件12位于输送管路13和电极板8之间，用于使输送管路13与电极板8 电绝缘，在绝缘部件12中设置有进气通道121，该进气通道121分别与输送管路13和进气口81连通，这样，由工艺气体输送管路142提供的工艺气体依次经由输送管路13、进气通道121和进气口81进入匀流空间10。
借助上述绝缘部件12，既可以将输送管路13与电极板8电绝缘，同时又因绝缘部件12在垂直于电极板8的方向上具有一定长度而可以增大二者之间的绝缘距离，该绝缘距离越大，则在电极板8中的进气口中产生打火的风险越小，从而可以提高系统稳定性。
优选的，绝缘部件12在垂直于电极板8的方向上的长度不小于40mm，这样既可以保证输送管路13与电极板8电绝缘之间具有适当的绝缘距离，又不会因绝缘部件12在垂直于电极板8的方向上的长度过长而导致设备整体尺寸过大。进一步优选的，绝缘部件12在垂直于电极板8的方向上的长度不小于40mm，优选为40mm～60mm。
请参阅图3A，上述进气通道包括第一通孔121和第二通孔122，其中，第二通孔122为多个，且围绕第一通孔121设置。通过借助第一通孔121和多个第二通孔122同时输送工艺气体，可以适当减小第一通孔121的直径，同时在第二通孔122的辅助下，可以保证工艺气体的流量满足要求。第一通孔121的直径越小，在其中产生等离子体的风险就越小，从而可以减小打火风险，提高反应腔室内的等离子体稳定性。
可选的，第二通孔122的直径小于第一通孔121的直径。由于第二通孔122的直径较小，在工艺气体同时经过第一通孔121和第二通孔122时，相比于单独设置第一通孔121，可以增大在绝缘部件12两端之间产生的气压差，该气压差越大，在通孔中产生等离子体的风险就越小，从而可以减小打火风险，提高反应腔室内的等离子体稳定性。
优选的，第一通孔的直径的取值范围在20mm～30mm；第二通孔122的直径的取值范围在1mm～3mm。这既可以保证工艺气体的流量满足要求，又 可以减小在通孔中产生等离子体的风险，从而可以减小打火风险，提高反应腔室内的等离子体稳定性。
在实际应用中，第一通孔121和第二通孔122可以为直通孔、锥形孔等等。
在本实施例中，如图3B所示，绝缘部件12分别与输送管路13和电极板8密封连接，且在绝缘部件12的进气通道的两个端部形成倒角(例如图3B示出的第一通孔121两端的倒角B)，以及输送管路13和进气口81分别与进气通道对接的端部形成有倒角。通过进行倒角处理，可以降低因边缘尖端而引起的打火风险。
优选的，腔室组件还包括加热组件17，该加热组件17设置在电极板8的顶部，且环绕该电极板8的圆周方向设置，用于对电极板8进行加热。具体地，加热组件17包括加热丝和包覆该加热丝的绝缘层。借助绝缘层，可以保证加热丝与电极板8电绝缘。当然，在实际应用中，也可以选用采用绝缘介质制作的加热丝，并采用耐腐蚀和导热性较好的保温层包覆该加热丝。保温层的材料优选为铝。另外，加热组件17可以采用粘接的方式固定在电极板8上。
在本实施例中，加热组件17包括多个分部，多个分部沿电极板8的圆周方向间隔排布。这样，可以均匀地加热电极板8，从而可以提高加热均匀性，进而提高工艺均匀性。
在本实施例中，腔室组件还包括射频电极11和射频源，该射频电极11呈柱状，且设置在电极板8的顶部，并且位于电极板8的边缘区域。射频源包括匹配器15和射频电源16，匹配器15与射频电极11电连接。
在本实施例中，腔室组件还包括均接地的屏蔽罩19和环形上盖18，其中，匀流部件9安装在环形上盖18内侧；屏蔽罩19设置在环形上盖18顶部，且与环形上盖18共同将电极板8、加热组件17以及射频电极11等部件罩在 其中，即，屏蔽罩19和环形上盖18共同形成的罩体至少将上述部件的上部和侧部包围，从而避免射频泄漏至屏蔽罩19和环形上盖18的外部。优选的，屏蔽罩19和环形上盖18的接触面之间设置有铍铜簧片，以保证屏蔽效果最佳。
在现有技术中，腔室组件包括由内而外层层叠置的多个介质层，这使得射频电极需要穿过多个介质层才能与电极板接触，导致射频电极的安装复杂，且容易出现层间打火现象。为了解决该问题，本申请提供的腔室组件借助屏蔽罩19，可以代替上述多个介质层的设置，使射频电极11直接与电极板8接触，而无需穿过介质层，从而简化了射频电极11的安装。而且，通过使射频电极11直接与电极板8接触，可以避免因多个介质层的设置而出现的层间打火现象的发生，从而提高了系统稳定性。
在本实施例中，屏蔽罩19的顶壁呈平板状，并且，屏蔽罩19的顶壁与电极板8之间的间距D3越大，则射频功率的利用率越高，基于此，通过增大间距D3，可以提高射频功率的利用率。优选的，间距D3的取值范围在40mm～100mm。这既可以保证射频功率的利用率提高，又不会因间距D3过大而导致设备整体尺寸过大。
需要说明的是，在实际应用中，屏蔽罩19可以采用本实施例所述的形状，也可以采用能够避免射频泄漏的其他任意形状，例如，屏蔽罩19呈穹顶状等。
综上所述，本发明实施例提供的腔室组件，具有以下优势：
其一，由于匀流部件9采用绝缘材料制作，这使得在向电极板8加载射频电压时，匀流部件9不会被加载有射频电压，从而可以避免匀流部件9的出气口91中的气体被电离形成等离子体，进而可以避免产生空心阴极放电问题，从而可以提高等离子体的稳定性。
其二，对应于反应腔室的径向上的不同区域，电极板8的厚度不同，以 使反应腔室内的电场分布趋于均匀，从而可以提高等离子体在反应腔室的径向上的分布均匀性。
其三，针对反应腔室的中心区域和边缘区域二者的气体流量差异，将匀流部件9划分为中心分区和位于该中心分区周围的环形的边缘分区，并且，中心分区中的出气口911的直径小于边缘分区中的出气口911的直径，从而可以补偿反应腔室的中心区域和边缘区域二者的气体流量差异。
其四，借助绝缘部件12，既可以将输送管路13与电极板8电绝缘，同时又因绝缘部件12在垂直于电极板8的方向上具有一定长度而可以增大二者之间的绝缘距离，从而可以降低在电极板8中的进气口中产生打火的风险，进而可以提高系统稳定性。
其五，加热组件17包括加热丝和包覆该加热丝的绝缘层。借助绝缘层，可以保证加热丝与电极板8电绝缘，从而可以进一步降低打火风险。
其六，借助屏蔽罩19，可以避免射频泄漏，同时可以代替多个介质层的设置，使射频电极11直接与电极板8接触，而无需穿过介质层，从而简化了射频电极11的安装。
其七，通过增大屏蔽罩19的顶壁与电极板8之间的间距D3，可以提高射频功率的利用率。
作为另一个技术方案，请参阅图4，本发明实施例提供一种反应腔室，其包括本发明前述实施例提供的腔室组件、腔体20和约束环21。
其中，腔体20的顶部具有开口，且在该腔体20的底部设置有排气口201。腔室组件设置在腔体20的顶部。约束环21设置在腔体20中，用于约束等离子体25的分布。在本实施例中，基座23设置在腔体20内，用于承载被加工工件，并且该基座23是可升降的，且在基座23上升至如图4所示的工艺位置时，堵塞约束环21的底部开口。在进行工艺时，等离子体25被约束在基座23上方，约束环25的侧壁内侧的空间内。
可选的，在约束环21与腔体20之间形成排气空间22，该排气空间22与排气口201连通，工艺残气依次经由排气空间22和排气口201排出反应腔室。匀流部件9设置在约束环21的顶部，且封闭约束环21的顶部开口，自出气口911流出的气体进入约束环21中。
另外，在腔体20内还设置有加热棒24，用于保证腔室内的温度恒定。该加热棒24可以为多个，且沿腔体的周向均匀分布，以能够均匀地加热腔体20。
在实际应用中，反应腔室可以为原子层沉积(Atomic layer deposition,以下简称ALD)反应腔室，或者也可以为等离子体增强化学的气相沉积(Plasma Enhanced Chemical Vapor Deposition，PECVD)反应腔室等等。
本发明实施例提供的反应腔室，其通过采用本发明前述实施例提供的腔室组件，不仅可以提高等离子体的稳定性，而且还可以提高等离子体分布均匀性。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (16)

  1. 一种腔室组件，其特征在于，包括：
    电极板，所述电极板用于与射频源电连接，且在所述电极板中设置有进气口；以及，
    匀流部件，所述匀流部件采用绝缘材料制作，且所述匀流部件与所述电极板之间构成匀流空间，所述进气口与所述匀流空间连通，在所述匀流部件上设置有多个出气口。
  2. 根据权利要求1所述的腔室组件，其特征在于，所述电极板在其径向上的厚度不同。
  3. 根据权利要求2所述的腔室组件，其特征在于，所述电极板的上表面为平面；并且在所述电极板的径向上，所述电极板的厚度自其中心至边缘逐渐增大。
  4. 根据权利要求1所述的腔室组件，其特征在于，所述匀流部件沿径向划分为多个分区；多个所述分区中的所述出气口的直径不同。
  5. 根据权利要求4所述的腔室组件，其特征在于，所述匀流部件划分为两个分区，分别为中心分区和位于所述中心分区周围的边缘分区；所述中心分区中的所述出气口的直径小于所述边缘分区中的所述出气口的直径。
  6. 根据权利要求5所述的腔室组件，其特征在于，所述中心分区的直径小于或者等于所述边缘分区的外径的三分之一。
  7. 根据权利要求5或6所述的腔室组件，其特征在于，所述中心分区 中的所述出气口的直径的取值范围在1mm～2.5mm；所述边缘分区中的所述出气口的直径的取值范围在2.6mm～5mm。
  8. 根据权利要求1所述的腔室组件，其特征在于，所述匀流部件包括设有所述出气口的匀流板，所述匀流板的厚度的取值范围在2mm～6mm。
  9. 根据权利要求1所述的腔室组件，其特征在于，还包括输送管路和绝缘部件，其中，所述绝缘部件位于所述输送管路和所述电极板之间，且在所述绝缘部件中设置有进气通道，所述进气通道分别与所述输送管路和所述进气口连通。
  10. 根据权利要求9所述的腔室组件，其特征在于，所述进气通道包括第一通孔和第二通孔，其中，所述第二通孔为多个，且围绕所述第一通孔设置。
  11. 根据权利要求10所述的腔室组件，其特征在于，所述第二通孔的直径小于所述第一通孔的直径。
  12. 根据权利要求11所述的腔室组件，其特征在于，所述第一通孔的直径的取值范围在20mm～30mm；所述第二通孔的直径的取值范围在1mm～3mm。
  13. 根据权利要求9所述的腔室组件，其特征在于，所述绝缘部件在垂直于所述电极板的方向上的长度不小于40mm。
  14. 根据权利要求1所述的腔室组件，其特征在于，还包括加热组件，所述加热组件设置在所述电极板的顶部，且环绕所述电极板的圆周方向设 置。
  15. 根据权利要求14所述的腔室组件，其特征在于，还包括均接地的屏蔽罩和环形上盖，其中，
    所述匀流部件安装在所述环形上盖的内侧；
    所述屏蔽罩设置在所述环形上盖顶部，且与所述环形上盖共同将所述电极板和所述加热组件罩在其中。
  16. 一种反应腔室，其特征在于，包括：
    权利要求1-15任意一项所述的腔室组件；
    腔体，其顶部具有开口，且在所述腔体的底部设置有排气口；所述腔室组件设置在所述腔体的顶部；
    约束环，其设置在所述腔体中，用于约束等离子体的分布。
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