WO2019216205A1 - Polishing liquid composition for glass hard disk substrate - Google Patents

Polishing liquid composition for glass hard disk substrate Download PDF

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Publication number
WO2019216205A1
WO2019216205A1 PCT/JP2019/017242 JP2019017242W WO2019216205A1 WO 2019216205 A1 WO2019216205 A1 WO 2019216205A1 JP 2019017242 W JP2019017242 W JP 2019017242W WO 2019216205 A1 WO2019216205 A1 WO 2019216205A1
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WO
WIPO (PCT)
Prior art keywords
polishing
mass
less
phosphate
component
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Application number
PCT/JP2019/017242
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French (fr)
Japanese (ja)
Inventor
戸田勝章
山口哲史
多久島大樹
Original Assignee
花王株式会社
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Publication of WO2019216205A1 publication Critical patent/WO2019216205A1/en

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers

Definitions

  • the present disclosure relates to a polishing liquid composition for a glass hard disk substrate, a method for manufacturing a glass hard disk substrate, and a method for polishing a glass substrate.
  • the hard disk mounted on the hard disk drive consumes high power because it rotates at high speed. In recent years, low power consumption has been demanded in consideration of the environment. In order to reduce power consumption, there is a method of increasing the recording capacity per hard disk, reducing the number of hard disks installed in the drive, and reducing the weight. In order to reduce the weight of one substrate, it is necessary to reduce the thickness of the substrate. From this point of view, the demand for a glass substrate having a higher mechanical strength than that of an aluminum substrate has increased, and the recent growth has been remarkable. . In order to improve the recording capacity per substrate, it is necessary to reduce the unit recording area. However, when the unit recording area is reduced, the magnetic signal becomes weak.
  • Patent Document 1 proposes an acidic polishing composition containing silica particles having a specific grain diameter and a specific zeta potential.
  • Patent Document 2 proposes a polishing liquid composition containing (a) water, (b) a phosphate ester compound, (c) a polishing accelerator, and (d) an abrasive.
  • Patent Document 3 proposes a polishing liquid composition containing (A) at least one selected from phosphoric acid, phosphate and phosphoric acid compound, (B) silica, and (C) water.
  • a method of polishing the glass substrate with an acidic polishing composition is employed.
  • an acidic polishing liquid composition By using an acidic polishing liquid composition, there is an advantage that a leaching action in which alkali ions contained in the glass substrate are eluted during polishing occurs, the hardness of the substrate surface is lowered, and the polishing rate is improved.
  • the leaching action works greatly when the pH is low, a brittle leaching layer is generated deeply, and the surface is roughened by alkali etching in the alkali cleaning step after the polishing step. There is a problem that it gets worse significantly.
  • the polishing rate and the surface roughness are in a trade-off relationship, and there is a problem that if one improves, the other deteriorates.
  • the present disclosure relates to a method for manufacturing a glass hard disk substrate having a step of polishing a glass substrate with an acidic polishing liquid and a step of cleaning.
  • a polishing composition for a glass hard disk substrate capable of suppressing deterioration of the surface roughness of the substrate, a method for producing a glass hard disk substrate using the same, and a method for polishing a glass substrate.
  • the present disclosure in one aspect, relates to a polishing liquid composition for a glass hard disk substrate, which contains abrasive grains, sulfamic acid, phosphate, and water.
  • the present disclosure relates to a method for manufacturing a glass hard disk substrate, including a step of polishing a glass substrate to be polished using the polishing composition of the present disclosure.
  • the present disclosure relates to a method for polishing a glass substrate, which includes polishing a glass substrate to be polished using the polishing composition of the present disclosure.
  • the polishing liquid composition contains sulfamic acid and phosphate, the polishing rate by the acidic polishing liquid is increased. It is based on the knowledge that deterioration of the surface roughness of the glass substrate due to cleaning can be suppressed while maintaining.
  • the present disclosure relates to a polishing liquid composition for glass hard disk substrate (hereinafter, also referred to as “the polishing liquid composition of the present disclosure”) containing abrasive grains, sulfamic acid, phosphate, and water. .
  • abrasive grains As abrasive grains (hereinafter, also referred to as “component A”) contained in the polishing composition of the present disclosure, abrasive grains generally used for polishing can be used, and metal, metal, or semimetal Carbides, nitrides, oxides, borides, diamond, and the like.
  • the metal or metalloid element is derived from Group 2A, 2B, 3A, 3B, 4A, 4B, 5A, 6A, 7A or Group 8 of the periodic table (long period type).
  • component A examples include silicon oxide (hereinafter referred to as silica), aluminum oxide (hereinafter referred to as alumina), silicon carbide, diamond, manganese oxide, magnesium oxide, zinc oxide, titanium oxide, cerium oxide (hereinafter referred to as ceria). ), Zirconium oxide and the like, and the use of one or more of these is preferable from the viewpoint of improving the polishing rate.
  • the component A is preferably silica particles or ceria particles, and more preferably silica particles.
  • the silica particles include colloidal silica, fumed silica, pulverized silica, and silica obtained by surface modification thereof, and colloidal silica is preferable.
  • Component A may be used alone or in combination of two or more.
  • the silica particles are, for example, a method based on particle growth using an aqueous alkali silicate solution (hereinafter also referred to as “water glass method”) and a method based on condensation of a hydrolyzate of alkoxysilane (hereinafter referred to as “sol-gel method”). From the viewpoint of ease of production and economy, and preferably obtained by the water glass method. Silica particles obtained by the water glass method and the sol-gel method can be produced by a conventionally known method.
  • the shape of the silica particles is not particularly limited, and may be spherical or non-spherical.
  • the average particle diameter of component A is preferably 1 nm or more, more preferably 5 nm or more, further preferably 10 nm or more, and 100 nm from the same viewpoint, from the viewpoint of suppressing the deterioration of the surface roughness while maintaining the polishing rate.
  • the following is preferable, 70 nm or less is more preferable, and 40 nm or less is still more preferable.
  • the average particle size of component A is preferably 1 nm to 100 nm, more preferably 5 nm to 70 nm, and still more preferably 10 nm to 40 nm.
  • the average particle diameter of component A can be determined, for example, by the method described in the examples.
  • the content of Component A in the polishing liquid composition of the present disclosure is preferably 0.1% by mass or more, more preferably 1% by mass or more, further preferably 3% by mass or more, from the viewpoint of improving the polishing rate. From the viewpoint of suppressing the deterioration of the surface roughness, it is preferably 20% by mass or less, more preferably 15% by mass or less, and still more preferably 10% by mass or less. More specifically, the content of Component A is preferably 0.1% by mass or more and 20% by mass or less, and more preferably 1% by mass or more and 15% by mass or less. When component A is a combination of two or more, the content of component A refers to the total content thereof.
  • the content of component A, component B, component C, water, and / or other components is regarded as the blending amount of each component with respect to the total amount (100% by mass) of the polishing composition. Can do.
  • “content” can be read as “formulation amount”
  • “containing” X can be read as “compounded”.
  • the polishing composition of the present disclosure contains sulfamic acid (hereinafter also referred to as “component B”) from the viewpoint of suppressing the deterioration of the surface roughness while maintaining the polishing rate.
  • the content of Component B in the polishing composition of the present disclosure is preferably 0.05% by mass or more, more preferably 0.1% by mass or more from the viewpoint of suppressing deterioration of surface roughness while maintaining the polishing rate.
  • 0.15% by mass or more is more preferable, 0.3% by mass or more is more preferable, 0.5% by mass or more is more preferable, and from the same viewpoint, 10% by mass or less is preferable, and 7% by mass or less.
  • 5% by mass or less is further preferable, 4% by mass or less is further preferable, and 2% by mass or less is further preferable.
  • the content of Component B is preferably 0.05% by mass or more and 10% by mass or less, more preferably 0.1% by mass or more and 7% by mass or less, and 0.15% by mass or more and 5% by mass or less. Is more preferably 0.15% by mass or more and 4% by mass or less, and further preferably 0.3% by mass or more and 2% by mass or less.
  • the mass ratio A / B (component A content / component B content) of component A and component B in the polishing liquid composition of the present disclosure suppresses deterioration of surface roughness while maintaining the polishing rate. From the viewpoint, 1 or more is preferable, 1.5 or more is more preferable, 2 or more is more preferable, and from the same viewpoint, 100 or less is preferable, 90 or less is more preferable, and 80 or less is more preferable. More specifically, the mass ratio A / B is preferably 1 or more and 100 or less, more preferably 1.5 or more and 90 or less, and still more preferably 2 or more and 80 or less.
  • the polishing composition of the present disclosure contains a phosphate (hereinafter also referred to as “component C”) from the viewpoint of suppressing deterioration of surface roughness while maintaining the polishing rate.
  • component C is not completely liberated in an aqueous medium at pH 2 (not completely H 3 PO 4 (aq)) from the viewpoint of suppressing the deterioration of the surface roughness while maintaining the polishing rate.
  • the phosphate present in the form (ion) is preferred.
  • component C is present in salt form (ions) when added to an aqueous medium at pH 2 in the same amount as the phosphate content in the polishing composition.
  • component C is sodium dihydrogen phosphate
  • 43% by mass of the component C added to the pH 2 aqueous medium is present in the form of salt (ion).
  • component C is sodium dihydrogen pyrophosphate
  • 96% by weight of component C added to the aqueous medium at pH 2 is present in the salt form (ions).
  • the phosphate of component C is preferably an alkali metal phosphate and more preferably an alkali metal hydrogen phosphate from the viewpoint of suppressing deterioration of surface roughness while maintaining the polishing rate.
  • alkali metal hydrogen phosphate include dipotassium hydrogen phosphate, disodium hydrogen phosphate, diammonium hydrogen phosphate, potassium dihydrogen phosphate, sodium dihydrogen phosphate, ammonium dihydrogen phosphate, pyrophosphoric acid Examples include sodium dihydrogen (sodium acid pyrophosphate), sodium pyrophosphate, sodium hexametaphosphate, sodium tripolyphosphate, and the like.
  • Component C may be used alone or in combination of two or more.
  • the content of Component C in the polishing liquid composition of the present disclosure is preferably 0.3% by mass or more, more preferably 0.5% by mass or more from the viewpoint of suppressing deterioration of surface roughness while maintaining the polishing rate.
  • 0.8% by mass or more is more preferable, 1% by mass or more is more preferable, and from the same viewpoint, 10% by mass or less is preferable, 7% by mass or less is more preferable, and 5% by mass or less is more preferable. 3 mass% or less is still more preferable.
  • the content of component C is preferably 0.3% by mass or more and 10% by mass or less, more preferably 0.5% by mass or more and 7% by mass or less in one or more embodiments, and 1% by mass.
  • the content of Component C is preferably 0.8% by mass or more and 3% by mass or less.
  • the content of component C refers to the total content thereof.
  • the mass ratio A / C (content of component A / content of component C) of component A and component C in the polishing composition of the present disclosure suppresses deterioration of surface roughness while maintaining the polishing rate. From the viewpoint, 0.5 or more is preferable, 1 or more is more preferable, 1.5 or more is more preferable, and from the same viewpoint, 26 or less is preferable, 20 or less is more preferable, and 16 or less is more preferable. More specifically, the mass ratio A / C is preferably 0.5 to 26, more preferably 1 to 20, and still more preferably 1.5 to 16.
  • the mass ratio B / C (component B content / component C content) of component B and component C in the polishing composition of the present disclosure suppresses deterioration of surface roughness while maintaining the polishing rate.
  • 0.01 or more is preferable, 0.03 or more is more preferable, 0.05 or more is further preferable, 0.07 or more is further preferable, 0.1 or more is further preferable, and from the same viewpoint, 50
  • the following is preferable, 30 or less is more preferable, 20 or less is further preferable, 10 or less is further preferable, 3 or less is further preferable, 2 or less is further preferable, 1 or less is further preferable, and 0.4 or less is further preferable.
  • the mass ratio B / C is preferably 0.01 or more and 50 or less, more preferably 0.01 or more and 30 or less, further preferably 0.03 or more and 20 or less, and further preferably 0.05 or more and 10 or less.
  • 0.05 to 3 is more preferable, 0.05 to 1 is further preferable, and 0.07 to 0.4 is further preferable.
  • the polishing liquid composition of the present disclosure contains water as a medium.
  • examples of water include distilled water, ion exchange water, pure water, and ultrapure water.
  • the content of water in the polishing liquid composition of the present disclosure can be the remainder excluding Component A, Component B, Component C, and optional components described below.
  • the content of water in the polishing liquid composition of the present disclosure is preferably 55% by mass or more, more preferably 70% by mass or more, and 80% by mass because the handling of the polishing liquid composition is further facilitated.
  • the water content is preferably 55% by mass or more and 99% by mass or less, more preferably 70% by mass or more and 98% by mass or less, further preferably 80% by mass or more and 97% by mass or less, and 85% by mass or more and 97% by mass or less. The following is more preferable.
  • the polishing composition of the present disclosure may further contain other components as necessary.
  • other components include acids other than components B and C or salts thereof, oxidizing agents, heterocyclic aromatic compounds, aliphatic amine compounds, alicyclic amine compounds, water-soluble polymers, thickeners, and dispersants. , Antirust agents, basic substances, surfactants, solubilizers, and the like.
  • the content of the other components in the polishing liquid composition of the present disclosure is preferably 0% by mass or more, more preferably more than 0% by mass, further preferably 0.1% by mass or more, and 10% by mass or less. Preferably, 5 mass% or less is more preferable. More specifically, the content of other components is preferably 0% by mass to 10% by mass, more preferably more than 0% by mass and 10% by mass or less, and further preferably 0.1% by mass to 5% by mass. .
  • the polishing liquid composition of the present disclosure may or may not include a phosphate ester compound. In one or a plurality of embodiments, the polishing liquid composition of the present disclosure may be a polishing liquid composition composed of Component A, Component B, Component C, and water.
  • the pH of the polishing composition of the present disclosure is preferably 0.9 or more, more preferably 1 or more, still more preferably 1.5 or more, from the viewpoint of suppressing deterioration of surface roughness while maintaining the polishing rate. From the same viewpoint, 6 or less is preferable, 5 or less is more preferable, and 4.5 or less is more preferable. More specifically, the pH of the polishing composition of the present disclosure is preferably 0.9 or more, 6 or less, more preferably 1 or more and 5 or less, further preferably 1 or more and 4.5 or less, and 1.5 or more and 4. 5 or less is more preferable.
  • the pH can be adjusted using the above-described Component B and Component C, a known pH adjusting agent, or the like.
  • the pH is the pH of the polishing composition at 25 ° C. and can be measured using a pH meter. For example, the pH meter electrode is immersed in the polishing composition and the value is 2 minutes later. be able to.
  • the polishing liquid composition of the present disclosure may be a polishing liquid composition for a glass hard disk substrate formed by blending Component A, Component B, Component C and water.
  • the polishing composition of the present disclosure can be produced by blending Component A, Component B, Component C, and water, and, if desired, other components by a known method.
  • the present disclosure includes a method for producing a polishing liquid composition (hereinafter referred to as “a method for producing a polishing liquid composition of the present disclosure”, which includes a step of blending at least component A, component B, component C and water. ").
  • mixing includes mixing component A, component B, component C and water, and optionally other components simultaneously or in any order.
  • the abrasive grains of component A may be mixed in a concentrated slurry state, or may be mixed after being diluted with water or the like.
  • component A is composed of a plurality of types of abrasive grains
  • the plurality of types of abrasive grains can be blended simultaneously or separately.
  • component C consists of a plurality of types of phosphates
  • the plurality of types of phosphates can be blended simultaneously or separately.
  • blending can be performed using mixers, such as a homomixer, a homogenizer, an ultrasonic disperser, and a wet ball mill, for example.
  • the preferable compounding amount of each component in the manufacturing method of the polishing liquid composition of the present disclosure can be the same as the preferable content of each component in the polishing liquid composition of the present disclosure described above.
  • the “content of each component in the polishing liquid composition” means the content of each component at the time of use, that is, when the polishing liquid composition starts to be used for polishing.
  • the polishing composition of the present disclosure may be stored and supplied in a concentrated state as long as its storage stability is not impaired. In this case, it is preferable in that the manufacturing and transportation costs can be further reduced.
  • the concentrate of the polishing liquid composition of the present disclosure may be used by appropriately diluting with the above-described water as necessary at the time of use.
  • the dilution rate is not particularly limited as long as the content (in use) of each component described above can be secured after dilution, and can be, for example, 10 to 100 times.
  • the present disclosure relates to a kit for producing the polishing liquid composition of the present disclosure (hereinafter, also referred to as “polishing liquid kit of the present disclosure”).
  • a polishing liquid kit of the present disclosure for example, a polishing liquid containing an abrasive dispersion liquid containing component A and water and an aqueous additive solution containing component B and component C are not mixed with each other.
  • a kit two-pack type polishing composition
  • the abrasive dispersion and the additive aqueous solution are mixed at the time of use, and diluted with water as necessary.
  • the abrasive dispersion and the additive aqueous solution may further contain other components as described above, if necessary.
  • the glass substrate to be polished by using the polishing composition of the present disclosure is a glass substrate used in the manufacturing process of a glass hard disk substrate in one or a plurality of embodiments.
  • the material of the glass substrate include quartz glass, soda lime glass, aluminosilicate glass, borosilicate glass, aluminoborosilicate glass, alkali-free glass, and crystallized glass.
  • the polishing composition of the present disclosure is suitably used for polishing an aluminosilicate glass substrate or an aluminoborosilicate glass substrate.
  • the glass substrate to be polished according to the present disclosure can be used as any of a horizontal magnetic recording substrate, a perpendicular magnetic recording substrate, and a thermally assisted recording (HAMR) substrate.
  • HAMR thermally assisted recording
  • the shape of the glass substrate to be polished examples include a shape having a flat portion such as a disk shape, a plate shape, a slab shape, and a prism shape, and a shape having a curved surface portion such as a lens.
  • a disk-shaped glass substrate to be polished is suitable.
  • the outer diameter is, for example, about 2 mm to 100 mm
  • the thickness is, for example, about 0.4 mm to 2 mm.
  • a glass hard disk substrate is obtained from a process of obtaining a glass substrate by a mold press of molten glass or a method of cutting out from sheet glass, a shape processing process, an end surface polishing process, a rough grinding process, a fine grinding process, a rough polishing process, and a finish polishing. It is manufactured through a process and a chemical strengthening process. The chemical strengthening step may be performed before the finish polishing step. In addition, a cleaning process may be included between the processes.
  • the glass hard disk substrate after the polishing process becomes a glass hard disk substrate formed into a magnetic disk through a recording portion forming process including the formation of a magnetic film.
  • the polishing composition of the present disclosure is preferably used for polishing (finish polishing) in the final polishing step.
  • the present disclosure includes a step of polishing a glass substrate to be polished using the polishing liquid composition of the present disclosure (hereinafter, also referred to as “polishing step using the polishing liquid composition of the present disclosure”). And a glass hard disk substrate manufacturing method (hereinafter also referred to as “substrate manufacturing method of the present disclosure”). According to the substrate manufacturing method of the present disclosure, by using the polishing composition in the present disclosure, an effect that a high-quality magnetic disk substrate can be manufactured with high yield and high productivity can be achieved.
  • the polishing step using the polishing liquid composition of the present disclosure is performed by supplying the polishing liquid composition of the present disclosure to the polishing target surface of the glass substrate to be polished, and providing the polishing pad on the polishing target surface. In this step, polishing is performed by moving at least one of the polishing pad and the substrate to be polished while applying contact and applying a predetermined pressure (load). Further, in one or a plurality of other embodiments, the polishing step using the polishing liquid composition of the present disclosure is performed by using a surface plate to which a polishing pad such as a non-woven organic polymer polishing cloth is attached. It is a step of polishing the substrate to be polished by moving the surface plate or the substrate to be polished while sandwiching and supplying the polishing composition of the present disclosure to the polishing machine.
  • the polishing process using the polishing composition of the present disclosure is preferably performed in the second stage or later, and is performed in the final polishing process or the final polishing process. Is more preferable.
  • different polishing machines may be used, and in the case of using different polishing machines, polishing is performed for each polishing process. It is preferable to clean the substrate.
  • the polishing composition of the present disclosure can also be used in cyclic polishing in which the used polishing liquid is reused.
  • the polishing machine is not particularly limited, and a known polishing machine for substrate polishing can be used.
  • polishing process using the polishing liquid composition of this indication For example, polishing of a suede type, a nonwoven fabric type, a polyurethane independent foam type, or the two-layer type which laminated
  • the average pore diameter of the surface member of the polishing pad is preferably 50 ⁇ m or less, more preferably 45 ⁇ m or less, still more preferably 40 ⁇ m or less, further preferably 35 ⁇ m or less, from the viewpoint of improving the polishing rate and the pad life, and the pad polishing liquid From the viewpoint of retention, 0.01 ⁇ m or more is preferable, 0.1 ⁇ m or more is more preferable, 1 ⁇ m or more is further preferable, and 10 ⁇ m or more is more preferable.
  • the average opening diameter of the surface member of the polishing pad is preferably 0.01 ⁇ m or more and 50 ⁇ m or less, more preferably 0.1 ⁇ m or more and 45 ⁇ m or less, further preferably 1 ⁇ m or more and 40 ⁇ m or less, and further preferably 10 ⁇ m or more and 35 ⁇ m or less.
  • the maximum value of the opening diameter of the polishing pad is preferably 100 ⁇ m or less, more preferably 70 ⁇ m or less, still more preferably 60 ⁇ m or less, and even more preferably 50 ⁇ m or less from the viewpoint of maintaining the polishing rate.
  • the polishing load in the polishing step using the polishing liquid composition of the present disclosure is preferably 3 kPa or more, more preferably 4 kPa or more from the viewpoint of improving the polishing rate, and stable so that no vibration is generated in the polishing machine during polishing. From the viewpoint of being able to be polished, it is preferably 40 kPa or less, and more preferably 15 kPa or less. More specifically, the polishing load is preferably 3 kPa or more and 40 kPa or less, and more preferably 4 kPa or more and 15 kPa or less.
  • the polishing load refers to the pressure of the surface plate applied to the polishing surface of the substrate to be polished during polishing. The polishing load can be adjusted by applying air pressure or weight to at least one of the surface plate and the substrate to be polished.
  • the supply rate of the polishing composition of the present disclosure is 0.01 mL / min or more per 1 cm 2 of the substrate to be polished from the viewpoint of cost reduction and polishing rate improvement.
  • / Min or less is preferable, 0.025 mL / min or more and 0.6 mL / min or less is more preferable, 0.05 mL / min or more and 0.4 mL / min or less is more preferable, 0.1 mL / min or more and 0.4 mL / min or less. Is even more preferred.
  • the supply flow rate may be higher than the flow rate described above.
  • Examples of a method of supplying the polishing composition of the present disclosure to a polishing machine include a method of continuously supplying using a pump or the like.
  • a method of continuously supplying using a pump or the like When supplying the polishing composition to the polishing machine, in addition to the method of supplying one component containing all the components, considering the stability of the polishing composition, etc., it is divided into a plurality of compounding component liquids, Two or more liquids can be supplied. In the latter case, for example, the plurality of compounding component liquids are mixed in the supply pipe or on the substrate to be polished to obtain the polishing liquid composition of the present disclosure.
  • the substrate manufacturing method of the present disclosure is a method of cleaning a glass substrate (substrate to be cleaned) that has been polished using the polishing liquid composition of the present disclosure, using the cleaning composition described above.
  • Step hereinafter also referred to as “cleaning step”.
  • the substrate to be cleaned in the cleaning process includes a glass substrate immediately after the polishing process using the polishing composition of the present disclosure, a dipping process in water to prevent drying after the polishing process, a water cleaning process as preliminary cleaning, A glass substrate that has undergone an acid cleaning step or the like is included.
  • this cleaning step includes (a) immersing the substrate to be cleaned in the cleaning composition, and / or (b) injecting the cleaning composition on the surface of the substrate to be cleaned. Is performed by supplying a cleaning composition to
  • the conditions for immersing the substrate to be cleaned in the cleaning composition may not be particularly limited.
  • the temperature of the cleaning composition is 20 ° C. or more and 100 ° C. or less from the viewpoint of safety and operability, and the immersion time is 10 seconds or more from the viewpoint of cleaning performance and production efficiency by the cleaning composition. Within 60 minutes.
  • the ultrasonic vibration is applied to the cleaning composition. Examples of the ultrasonic frequency include 20 kHz to 2000 kHz.
  • the cleaning agent composition to which ultrasonic vibration is applied is injected to the cleaning substrate surface.
  • the surface is contacted to clean the surface, or the cleaning composition is supplied by injection onto the surface of the substrate to be cleaned and then cleaned by rubbing the surface supplied with the cleaning composition with a cleaning brush. It is preferable to do.
  • the cleaning composition to which ultrasonic vibration is applied is supplied to the surface to be cleaned by injection, and the surface to which the cleaning composition is supplied is cleaned by rubbing with a cleaning brush. Is preferred.
  • known means such as a spray nozzle can be used.
  • the cleaning brush include known brushes such as a nylon brush and a PVA (polyvinyl alcohol) sponge brush.
  • the ultrasonic frequency may be the same as the value preferably adopted in the method (a).
  • the cleaning step may include one or more steps using known cleaning such as rocking cleaning, cleaning using rotation of a spinner, paddle cleaning, and the like. Good.
  • an alkaline agent for example, an alkaline agent, water, and various additives as required can be used.
  • the alkali agent at least one of an inorganic alkali agent and an organic alkali agent can be used.
  • the inorganic alkaline agent include ammonia, potassium hydroxide, and sodium hydroxide.
  • the organic alkali agent include at least one selected from hydroxyalkylamine, tetramethylammonium hydroxide, and choline.
  • various additives include nonionic surfactants, chelating agents, ether carboxylates, fatty acids, anionic surfactants, water-soluble polymers, antifoaming agents, alcohols, preservatives, antioxidants, and the like. It is done.
  • the pH of the cleaning composition used in the cleaning step is preferably 8 or more and 13 or less, for example, from the viewpoint of improving the dispersibility of the residue on the substrate.
  • the above pH is the pH of the cleaning composition at 25 ° C. and can be measured using a pH meter (Toa Denpa Kogyo Co., Ltd., HM-30G). For example, the electrode is immersed in the cleaning composition for 3 minutes. Later numbers can be adopted.
  • a substrate manufacturing method of the present disclosure includes a step of forming a magnetic film on a glass substrate after a polishing step and a cleaning step of a glass substrate to be polished, or a recording unit formation including formation of a magnetic film You may have a process.
  • the present disclosure relates to a glass substrate polishing method (hereinafter, also referred to as “polishing method of the present disclosure”) including polishing a glass substrate to be polished using the polishing composition of the present disclosure.
  • polishing method of the present disclosure By using the polishing method of the present disclosure, an effect that a high-quality magnetic disk substrate can be manufactured with high yield and high productivity can be achieved.
  • the glass substrate to be polished in the polishing method of the present disclosure include those used for manufacturing a glass hard disk substrate as described above. Specific polishing methods and conditions may be the same methods and conditions as the above-described substrate manufacturing method of the present disclosure.
  • Polishing a glass substrate to be polished using the polishing liquid composition of the present disclosure includes supplying the polishing liquid composition of the present disclosure to the surface to be polished of the substrate to be polished in one or a plurality of embodiments.
  • a polishing pad is brought into contact with the surface, and polishing is performed by moving at least one of the polishing pad and the substrate to be polished, or a surface plate on which a polishing pad such as a non-woven organic polymer polishing cloth is attached.
  • the substrate to be polished is sandwiched and the surface plate or the substrate to be polished is moved to polish the substrate to be polished while supplying the polishing composition of the present disclosure to the polishing machine.
  • a polishing liquid composition for a glass hard disk substrate comprising abrasive grains (component A), sulfamic acid (component B), phosphate (component C), and water.
  • ⁇ 2> The polishing composition according to ⁇ 1>, wherein component A is silica particles.
  • component A is colloidal silica.
  • ⁇ 4> The polishing liquid according to any one of ⁇ 1> to ⁇ 3>, wherein the content of component A is preferably 0.1% by mass or more, more preferably 1% by mass or more, and further preferably 3% by mass or more.
  • Composition. ⁇ 5> The content of component A is preferably 20% by mass or less, more preferably 15% by mass or less, and further preferably 10% by mass or less, and the polishing composition according to any one of ⁇ 1> to ⁇ 4> .
  • the content of Component B is preferably 10% by mass or less, more preferably 7% by mass or less, further preferably 5% by mass or less, further preferably 4% by mass or less, and further preferably 2% by mass or less.
  • the content of Component B is preferably 0.05% by mass or more and 10% by mass or less, more preferably 0.1% by mass or more and 7% by mass or less, and further preferably 0.15% by mass or more and 5% by mass or less.
  • ⁇ 10> The polishing according to any one of ⁇ 1> to ⁇ 9>, wherein the mass ratio A / B between component A and component B is preferably 1 or more, more preferably 1.5 or more, and still more preferably 2 or more.
  • Liquid composition. ⁇ 11> The polishing liquid composition according to any one of ⁇ 1> to ⁇ 10>, wherein the mass ratio A / B between component A and component B is preferably 100 or less, more preferably 90 or less, and still more preferably 80 or less. object.
  • the mass ratio A / B between the component A and the component B is preferably 1 or more and 100 or less, more preferably 1.5 or more and 90 or less, and further preferably 2 or more and 80 or less, from ⁇ 1> to ⁇ 11>
  • the polishing liquid composition in any one.
  • the proportion of component C present in the form of a salt is aqueous at pH 2.
  • ⁇ 1> to ⁇ 12> preferably 10% by mass or more, more preferably 20% by mass or more, and still more preferably 30% by mass or more, based on the total amount of component C added to the medium. Polishing liquid composition.
  • Component C is dipotassium hydrogen phosphate, disodium hydrogen phosphate, diammonium hydrogen phosphate, potassium dihydrogen phosphate, sodium dihydrogen phosphate, ammonium dihydrogen phosphate, sodium dihydrogen pyrophosphate, pyrroline Polishing liquid composition in any one of ⁇ 1> to ⁇ 13> which is 1 type, or 2 or more types chosen from sodium acid, sodium hexametaphosphate, and sodium tripolyphosphate.
  • the content of component C is preferably 0.3% by mass or more, more preferably 0.5% by mass or more, further preferably 0.8% by mass or more, and further preferably 1% by mass or more. ⁇ 1> To ⁇ 14>.
  • the content of component C is preferably 10% by mass or less, more preferably 7% by mass or less, further preferably 5% by mass or less, and further preferably 3% by mass or less, any one of ⁇ 1> to ⁇ 15>
  • the content of component C is preferably 0.3% by mass or more and 10% by mass or less, more preferably 0.5% by mass or more and 7% by mass or less, and further preferably 1% by mass or more and 5% by mass or less.
  • polishing composition according to any one of ⁇ 1> to ⁇ 16>, wherein the content of component C is 0.8% by mass or more and 3% by mass or less.
  • the mass ratio A / C between the component A and the component C is preferably 0.5 or more, more preferably 1 or more, and further preferably 1.5 or more, according to any one of ⁇ 1> to ⁇ 18>.
  • Polishing liquid composition ⁇ 20> The polishing liquid composition according to any one of ⁇ 1> to ⁇ 19>, wherein the mass ratio A / C between component A and component C is preferably 26 or less, more preferably 20 or less, and still more preferably 16 or less. object.
  • the mass ratio A / C between the component A and the component C is preferably 0.5 or more and 26 or less, more preferably 1 or more and 20 or less, and further preferably 1.5 or more and 16 or less, ⁇ 1> to ⁇ 20 >
  • the mass ratio B / C between the component B and the component C is preferably 0.01 or more, more preferably 0.03 or more, still more preferably 0.05 or more, still more preferably 0.07 or more, and 1 or more, The polishing liquid composition in any one of ⁇ 1> to ⁇ 21>.
  • the mass ratio B / C between the component B and the component C is preferably 50 or less, more preferably 30 or less, still more preferably 20 or less, still more preferably 10 or less, still more preferably 3 or less, and even more preferably 2 or less.
  • the mass ratio B / C between the component B and the component C is preferably 0.01 or more and 50 or less, more preferably 0.01 or more and 30 or less, further preferably 0.03 or more and 20 or less, and 0.05 or more.
  • Polishing liquid composition is more preferable, 0.05 or more and 3 or less is more preferable, 0.05 or more and 1 or less is more preferable, and 0.07 or more and 0.4 or less is further preferable, ⁇ 1> to ⁇ 23> Polishing liquid composition.
  • ⁇ 27> The polishing composition according to any one of ⁇ 1> to ⁇ 26>, wherein the pH is preferably 0.9 or more, more preferably 1 or more, and still more preferably 1.5 or more.
  • ⁇ 28> The polishing composition according to any one of ⁇ 1> to ⁇ 27>, wherein the pH is preferably 6 or less, more preferably 5 or less, and even more preferably 4.5 or less.
  • the pH is preferably 0.9 or more and 6 or less, more preferably 1 or more and 5 or less, further preferably 1 or more and 4.5 or less, and further preferably 1.5 or more and 4.5 or less, from ⁇ 1> to ⁇ 28>
  • ⁇ 30> The polishing composition according to any one of ⁇ 1> to ⁇ 29>, wherein the glass hard disk substrate is an aluminoborosilicate glass substrate.
  • ⁇ 31> A method for producing a glass hard disk substrate, comprising a step of polishing a glass substrate to be polished using the polishing composition according to any one of ⁇ 1> to ⁇ 30>.
  • ⁇ 32> A method for polishing a glass substrate, comprising polishing a glass substrate to be polished using the polishing composition according to any one of ⁇ 1> to ⁇ 30>.
  • polishing liquid compositions (Examples 1 to 10 and Comparative Examples 1 to 7) Table 1 shows component A (colloidal silica, average particle size 20 nm), component B (sulfamic acid) or non-component B (acid shown in Table 1), component C (phosphate shown in Table 1) and ion-exchanged water.
  • the polishing liquid compositions of Examples 1 to 10 and Comparative Examples 1 to 7 were prepared by blending at the stated ratio (mass%) and stirring.
  • potassium dihydrogen phosphate component C
  • component C potassium dihydrogen phosphate
  • the proportion of potassium dihydrogen phosphate present in is 43% by weight, based on the total amount of potassium dihydrogen phosphate added to the aqueous medium at pH.
  • Measuring method of various parameters [Measuring method of average particle diameter of silica particles (component A)] A sample containing colloidal silica particles was observed with a transmission electron microscope “JEM-2000FX” (80 kV, 1 to 50,000 times, manufactured by JEOL Ltd.) according to the instructions attached by the manufacturer, and TEM (Transmission Electron) was observed. Microscope) images were taken. This photograph was taken into a personal computer as image data by a scanner, and the equivalent diameter of each silica particle was measured using analysis software “WinROOF ver. 3.6” (distributor: Mitani Corp.) to obtain the particle diameter. . Thus, after calculating
  • aluminoborosilicate glass substrate roughly polished in advance with a polishing composition containing ceria abrasive grains was prepared as a substrate to be polished.
  • Constituent elements contained in the substrate had a Si content of 24% by mass, an Al content of 8% by mass, and a B content of 1% by mass.
  • the constituent elements were measured using the ESCA (Electron Spectroscopy for Chemical Analysis) method under the following measurement conditions.
  • polishing Method The substrate to be polished was polished using the polishing liquid compositions of Examples 1 to 10 and Comparative Examples 1 to 7 under the following polishing conditions.
  • Polishing tester "Fast double-sided 9B polishing machine” manufactured by Speedfam Polishing pad: Suede type (thickness 0.9mm, average pore diameter 30 ⁇ m, material: urethane foam) Polishing liquid composition supply amount: 100 mL / min (supply rate per 1 cm 2 of polishing substrate: about 0.3 mL / min) Lower platen rotation speed: 24rpm Polishing load: 4.9 kPa Carrier: Aramid, thickness 0.5mm Polishing time: 30 minutes Substrate to be polished: Aluminoborosilicate glass substrate (outer diameter 95 mm, inner diameter 25 mm, thickness 0.65 mm) Number of input substrates: 5
  • the polishing liquid compositions of Examples 1 to 10 were deteriorated in the surface roughness of the substrate after cleaning while maintaining the polishing rate as compared with the polishing liquid compositions of Comparative Examples 1 to 7. Was suppressed.
  • the polishing composition of the present disclosure According to the polishing composition of the present disclosure, deterioration of the surface roughness of the substrate surface after cleaning can be suppressed while maintaining the polishing rate. Therefore, the polishing composition of the present disclosure is useful in the production of various glass substrates, and is particularly useful in the production of glass substrates for hard disks.

Abstract

Provided is, as one embodiment, a polishing liquid composition for a glass hard disk substrate that can prevent deterioration of surface roughness of a substrate surface after washing while maintaining the polishing rate. One embodiment of the present invention relates to a polishing liquid composition for a glass hard disk substrate that comprises abrasive grains, a sulfamic acid, a phosphate, and water.

Description

ガラスハードディスク基板用研磨液組成物Polishing liquid composition for glass hard disk substrate
 本開示は、ガラスハードディスク基板用研磨液組成物、ガラスハードディスク基板の製造方法、及び、ガラス基板の研磨方法に関する。 The present disclosure relates to a polishing liquid composition for a glass hard disk substrate, a method for manufacturing a glass hard disk substrate, and a method for polishing a glass substrate.
 ハードディスクドライブに搭載されるハードディスクは高速で回転するため消費電力が高く、近年では環境への配慮から、低消費電力化が求められている。消費電力を低減するためには、ハードディスク1枚あたりの記録容量を増大させ、ドライブに搭載されるハードディスクの枚数を減らし、軽量化する方法がある。基板1枚の重量を軽量化するためには、基板の厚さを薄くする必要があり、この観点から、アルミ基板に比べて機械的強度が高いガラス基板の需要が高まり、近年の伸張は著しい。また、基板1枚あたりの記録容量を向上させるためには、単位記録面積を縮小する必要がある。しかし、単位記録面積を縮小すると磁気信号が弱くなる問題が発生する。そこで磁気信号の検出感度を向上するため、磁気ヘッドの浮上高さをより低くするための技術開発が進められている。ハードディスク基板の研磨においては、この磁気ヘッドの低浮上化に対応するため、表面欠陥や残留物の低減に対する要求が厳しくなっている。 The hard disk mounted on the hard disk drive consumes high power because it rotates at high speed. In recent years, low power consumption has been demanded in consideration of the environment. In order to reduce power consumption, there is a method of increasing the recording capacity per hard disk, reducing the number of hard disks installed in the drive, and reducing the weight. In order to reduce the weight of one substrate, it is necessary to reduce the thickness of the substrate. From this point of view, the demand for a glass substrate having a higher mechanical strength than that of an aluminum substrate has increased, and the recent growth has been remarkable. . In order to improve the recording capacity per substrate, it is necessary to reduce the unit recording area. However, when the unit recording area is reduced, the magnetic signal becomes weak. Therefore, in order to improve the detection sensitivity of the magnetic signal, technological development for lowering the flying height of the magnetic head has been advanced. In the polishing of a hard disk substrate, in order to cope with the low flying height of the magnetic head, there are strict requirements for reducing surface defects and residues.
 このような要求に対し、例えば、特許文献1では、特定のグレイン径及び特定のゼータ電位を有するシリカ粒子を含む酸性の研磨液組成物が提案されている。
 また、特許文献2では、(a)水、(b)リン酸エステル化合物、(c)研磨促進剤、(d)研磨材を含む研磨液組成物が提案されている。
 さらに、特許文献3では、(A)リン酸、リン酸塩及びリン酸化合物から選ばれる少なくとも1種、(B)シリカ、(C)水を含む研磨液組成物が提案されている。
In response to such a demand, for example, Patent Document 1 proposes an acidic polishing composition containing silica particles having a specific grain diameter and a specific zeta potential.
Patent Document 2 proposes a polishing liquid composition containing (a) water, (b) a phosphate ester compound, (c) a polishing accelerator, and (d) an abrasive.
Further, Patent Document 3 proposes a polishing liquid composition containing (A) at least one selected from phosphoric acid, phosphate and phosphoric acid compound, (B) silica, and (C) water.
特開2011-704号公報Japanese Unexamined Patent Publication No. 2011-704 特開2001-89749号公報JP 2001-89749 A 特表2003-183630号公報Special table 2003-183630 gazette
 ガラスハードディスク基板の研磨においては、酸性の研磨液組成物でガラス基板を研磨する方法が採用されている。酸性の研磨液組成物を用いることで、研磨中にガラス基板に含有されるアルカリイオンが溶出するリーチング作用が起こり、基板表面の硬度が低下して研磨速度が向上するという利点がある。しかしながら、酸性の研磨液組成物でガラス基板を研磨する方法は、pHが低いとリーチング作用が大きく働くため、脆いリーチング層が深くまで生成し、研磨工程後のアルカリ洗浄工程におけるアルカリエッチングにより表面粗さが著しく悪化するという問題がある。また、一般的に、研磨速度と表面粗さとはトレードオフの関係にあり、一方が改善すれば一方が悪化するという問題がある。 In the polishing of the glass hard disk substrate, a method of polishing the glass substrate with an acidic polishing composition is employed. By using an acidic polishing liquid composition, there is an advantage that a leaching action in which alkali ions contained in the glass substrate are eluted during polishing occurs, the hardness of the substrate surface is lowered, and the polishing rate is improved. However, in the method of polishing a glass substrate with an acidic polishing liquid composition, since the leaching action works greatly when the pH is low, a brittle leaching layer is generated deeply, and the surface is roughened by alkali etching in the alkali cleaning step after the polishing step. There is a problem that it gets worse significantly. In general, the polishing rate and the surface roughness are in a trade-off relationship, and there is a problem that if one improves, the other deteriorates.
 本開示は、一又は複数の実施形態において、ガラス基板を酸性研磨液で研磨する工程と洗浄する工程を有するガラスハードディスク基板の製造方法において、研磨工程において研磨速度を維持しつつ、洗浄工程においてガラス基板の表面粗さの悪化を抑制できるガラスハードディスク基板用研磨液組成物、並びにこれを用いたガラスハードディスク基板の製造方法及びガラス基板の研磨方法を提供する。 In one or a plurality of embodiments, the present disclosure relates to a method for manufacturing a glass hard disk substrate having a step of polishing a glass substrate with an acidic polishing liquid and a step of cleaning. Provided are a polishing composition for a glass hard disk substrate capable of suppressing deterioration of the surface roughness of the substrate, a method for producing a glass hard disk substrate using the same, and a method for polishing a glass substrate.
 本開示は、一態様において、砥粒、スルファミン酸、リン酸塩、及び水を含有する、ガラスハードディスク基板用研磨液組成物に関する。 The present disclosure, in one aspect, relates to a polishing liquid composition for a glass hard disk substrate, which contains abrasive grains, sulfamic acid, phosphate, and water.
 本開示は、その他の態様において、本開示の研磨液組成物を用いて被研磨ガラス基板を研磨する工程を含む、ガラスハードディスク基板の製造方法に関する。 In another aspect, the present disclosure relates to a method for manufacturing a glass hard disk substrate, including a step of polishing a glass substrate to be polished using the polishing composition of the present disclosure.
 本開示は、その他の態様において、本開示の研磨液組成物を用いて被研磨ガラス基板を研磨することを含む、ガラス基板の研磨方法に関する。 In another aspect, the present disclosure relates to a method for polishing a glass substrate, which includes polishing a glass substrate to be polished using the polishing composition of the present disclosure.
 本開示によれば、一又は複数の実施形態において、研磨工程において研磨速度を維持しつつ、洗浄工程においてガラス基板の表面粗さの悪化を抑制できる。 According to the present disclosure, in one or a plurality of embodiments, it is possible to suppress deterioration of the surface roughness of the glass substrate in the cleaning step while maintaining the polishing rate in the polishing step.
 本開示は、ガラス基板を酸性研磨液で研磨した後にアルカリ洗浄した場合であっても、研磨液組成物中にスルファミン酸とリン酸塩とが含まれていると、酸性研磨液による研磨速度を維持しつつ、洗浄によるガラス基板の表面粗さの悪化を抑制できるという知見に基づく。 In the present disclosure, even when a glass substrate is polished with an acidic polishing liquid and then washed with an alkali, if the polishing liquid composition contains sulfamic acid and phosphate, the polishing rate by the acidic polishing liquid is increased. It is based on the knowledge that deterioration of the surface roughness of the glass substrate due to cleaning can be suppressed while maintaining.
 すなわち、本開示は、一態様において、砥粒、スルファミン酸、リン酸塩、及び水を含有する、ガラスハードディスク基板用研磨液組成物(以下、「本開示の研磨液組成物」ともいう)に関する。 That is, in one aspect, the present disclosure relates to a polishing liquid composition for glass hard disk substrate (hereinafter, also referred to as “the polishing liquid composition of the present disclosure”) containing abrasive grains, sulfamic acid, phosphate, and water. .
 本開示の効果発現のメカニズムは明らかではないが、以下のように推察される。
 一般に、ガラス基板を酸性研磨すると、ガラス基板表面から金属イオンが溶出して、ガラス基板表面が脆弱化し、研磨されやすくなることが知られている。
 本開示では、スルファミン酸とリン酸塩とを研磨液組成物中に含有させることで、金属イオンの溶出が促進され、研磨速度の向上と表面粗さの悪化抑制とを両立できると考えられる。
 但し、本開示はこれらのメカニズムに限定して解釈されなくてもよい。
The mechanism of manifestation of the effect of the present disclosure is not clear, but is presumed as follows.
In general, it is known that when a glass substrate is acid-polished, metal ions are eluted from the surface of the glass substrate, the surface of the glass substrate becomes brittle and is easily polished.
In the present disclosure, it is considered that by containing sulfamic acid and phosphate in the polishing composition, elution of metal ions is promoted, and both improvement in polishing rate and suppression of deterioration of surface roughness can be achieved.
However, the present disclosure need not be construed as being limited to these mechanisms.
[砥粒(成分A)]
 本開示の研磨液組成物に含まれる砥粒(以下、「成分A」ともいう)としては、研磨用に一般的に使用されている砥粒を使用することができ、金属、金属若しくは半金属の炭化物、窒化物、酸化物、又はホウ化物、ダイヤモンド等が挙げられる。金属又は半金属元素は、周期律表(長周期型)の2A、2B、3A、3B、4A、4B、5A、6A、7A又は8族由来のものである。成分Aの具体例としては、酸化珪素(以下、シリカという)、酸化アルミニウム(以下、アルミナという)、炭化珪素、ダイヤモンド、酸化マンガン、酸化マグネシウム、酸化亜鉛、酸化チタン、酸化セリウム(以下、セリアという)、酸化ジルコニウム等が挙げられ、これらの1種以上を使用することは研磨速度を向上させる観点から好ましい。中でも、研磨速度を維持しつつ表面粗さの悪化を抑制する観点から、成分Aとしては、シリカ粒子、セリア粒子が好ましく、シリカ粒子がより好ましい。シリカ粒子としては、コロイダルシリカ、ヒュームドシリカ、粉砕シリカ、及びそれらを表面修飾したシリカ等が挙げられ、コロイダルシリカが好ましい。成分Aは、1種単独で用いてもよいし、2種以上を併用してもよい。
[Abrasive grains (component A)]
As abrasive grains (hereinafter, also referred to as “component A”) contained in the polishing composition of the present disclosure, abrasive grains generally used for polishing can be used, and metal, metal, or semimetal Carbides, nitrides, oxides, borides, diamond, and the like. The metal or metalloid element is derived from Group 2A, 2B, 3A, 3B, 4A, 4B, 5A, 6A, 7A or Group 8 of the periodic table (long period type). Specific examples of component A include silicon oxide (hereinafter referred to as silica), aluminum oxide (hereinafter referred to as alumina), silicon carbide, diamond, manganese oxide, magnesium oxide, zinc oxide, titanium oxide, cerium oxide (hereinafter referred to as ceria). ), Zirconium oxide and the like, and the use of one or more of these is preferable from the viewpoint of improving the polishing rate. Among these, from the viewpoint of suppressing the deterioration of the surface roughness while maintaining the polishing rate, the component A is preferably silica particles or ceria particles, and more preferably silica particles. Examples of the silica particles include colloidal silica, fumed silica, pulverized silica, and silica obtained by surface modification thereof, and colloidal silica is preferable. Component A may be used alone or in combination of two or more.
 前記シリカ粒子は、例えば、珪酸アルカリ水溶液を原料とした粒子成長による方法(以下、「水ガラス法」ともいう)、及び、アルコキシシランの加水分解物の縮合による方法(以下、「ゾルゲル法」ともいう)により得たものが挙げられ、製造容易性及び経済性の観点から、好ましくは水ガラス法により得たものである。水ガラス法及びゾルゲル法により得られるシリカ粒子は、従来から公知の方法によって製造できる。シリカ粒子の形状は、特に限定されなくてもよく、球状でも非球状でもよい。 The silica particles are, for example, a method based on particle growth using an aqueous alkali silicate solution (hereinafter also referred to as “water glass method”) and a method based on condensation of a hydrolyzate of alkoxysilane (hereinafter referred to as “sol-gel method”). From the viewpoint of ease of production and economy, and preferably obtained by the water glass method. Silica particles obtained by the water glass method and the sol-gel method can be produced by a conventionally known method. The shape of the silica particles is not particularly limited, and may be spherical or non-spherical.
 成分Aの平均粒径は、研磨速度を維持しつつ表面粗さの悪化を抑制する観点から、1nm以上が好ましく、5nm以上がより好ましく、10nm以上が更に好ましく、そして、同様の観点から、100nm以下が好ましく、70nm以下がより好ましく、40nm以下が更に好ましい。より具体的には、成分Aの平均粒径は、1nm以上100nm以下が好ましく、5nm以上70nm以下がより好ましく、10nm以上40nm以下が更に好ましい。成分Aの平均粒径は、例えば、実施例に記載の方法により求めることができる。 The average particle diameter of component A is preferably 1 nm or more, more preferably 5 nm or more, further preferably 10 nm or more, and 100 nm from the same viewpoint, from the viewpoint of suppressing the deterioration of the surface roughness while maintaining the polishing rate. The following is preferable, 70 nm or less is more preferable, and 40 nm or less is still more preferable. More specifically, the average particle size of component A is preferably 1 nm to 100 nm, more preferably 5 nm to 70 nm, and still more preferably 10 nm to 40 nm. The average particle diameter of component A can be determined, for example, by the method described in the examples.
 本開示の研磨液組成物中における成分Aの含有量は、研磨速度向上の観点から、0.1質量%以上が好ましく、1質量%以上がより好ましく、3質量%以上が更に好ましく、そして、表面粗さの悪化抑制の観点から、20質量%以下が好ましく、15質量%以下がより好ましく、10質量%以下が更に好ましい。より具体的には、成分Aの含有量は、0.1質量%以上20質量%以下が好ましく、1質量%以上15質量%以下が更に好ましい。成分Aが2種以上の組合せである場合、成分Aの含有量は、それらの合計含有量をいう。 The content of Component A in the polishing liquid composition of the present disclosure is preferably 0.1% by mass or more, more preferably 1% by mass or more, further preferably 3% by mass or more, from the viewpoint of improving the polishing rate. From the viewpoint of suppressing the deterioration of the surface roughness, it is preferably 20% by mass or less, more preferably 15% by mass or less, and still more preferably 10% by mass or less. More specifically, the content of Component A is preferably 0.1% by mass or more and 20% by mass or less, and more preferably 1% by mass or more and 15% by mass or less. When component A is a combination of two or more, the content of component A refers to the total content thereof.
 本開示の一実施形態において、成分A、成分B、成分C、水、及び/又はその他の成分の含有量は、研磨液組成物の全量(100質量%)に対する各成分の配合量とみなすことができる。一又は複数の実施形態において、「含有量」は「配合量」に読み替えることができ、Xを「含有する」はXが「配合された」に読み替えることができる。 In one embodiment of the present disclosure, the content of component A, component B, component C, water, and / or other components is regarded as the blending amount of each component with respect to the total amount (100% by mass) of the polishing composition. Can do. In one or a plurality of embodiments, “content” can be read as “formulation amount”, and “containing” X can be read as “compounded”.
[スルファミン酸(成分B)]
 本開示の研磨液組成物は、研磨速度を維持しつつ表面粗さの悪化を抑制する観点から、スルファミン酸(以下、「成分B」ともいう)を含む。
[Sulphamic acid (component B)]
The polishing composition of the present disclosure contains sulfamic acid (hereinafter also referred to as “component B”) from the viewpoint of suppressing the deterioration of the surface roughness while maintaining the polishing rate.
 本開示の研磨液組成物中の成分Bの含有量は、研磨速度を維持しつつ表面粗さの悪化を抑制する観点から、0.05質量%以上が好ましく、0.1質量%以上がより好ましく、0.15質量%以上が更に好ましく、0.3質量%以上が更に好ましく、0.5質量%以上が更に好ましく、そして、同様の観点から、10質量%以下が好ましく、7質量%以下がより好ましく、5質量%以下が更に好ましく、4質量%以下が更に好ましく、2質量%以下が更に好ましい。より具体的には、成分Bの含有量は、0.05質量%以上10質量%以下が好ましく、0.1質量%以上7質量%以下がより好ましく、0.15質量%以上5質量%以下が更に好ましく、0.15質量%以上4質量%以下が更に好ましく、0.3質量%以上2質量%以下が更に好ましい。 The content of Component B in the polishing composition of the present disclosure is preferably 0.05% by mass or more, more preferably 0.1% by mass or more from the viewpoint of suppressing deterioration of surface roughness while maintaining the polishing rate. Preferably, 0.15% by mass or more is more preferable, 0.3% by mass or more is more preferable, 0.5% by mass or more is more preferable, and from the same viewpoint, 10% by mass or less is preferable, and 7% by mass or less. Is more preferable, 5% by mass or less is further preferable, 4% by mass or less is further preferable, and 2% by mass or less is further preferable. More specifically, the content of Component B is preferably 0.05% by mass or more and 10% by mass or less, more preferably 0.1% by mass or more and 7% by mass or less, and 0.15% by mass or more and 5% by mass or less. Is more preferably 0.15% by mass or more and 4% by mass or less, and further preferably 0.3% by mass or more and 2% by mass or less.
 本開示の研磨液組成物中の成分Aと成分Bとの質量比A/B(成分Aの含有量/成分Bの含有量)は、研磨速度を維持しつつ表面粗さの悪化を抑制する観点から、1以上が好ましく、1.5以上がより好ましく、2以上が更に好ましく、そして、同様の観点から、100以下が好ましく、90以下がより好ましく、80以下が更に好ましい。より具体的には、質量比A/Bは、1以上100以下が好ましく、1.5以上90以下がより好ましく、2以上80以下が更に好ましい。 The mass ratio A / B (component A content / component B content) of component A and component B in the polishing liquid composition of the present disclosure suppresses deterioration of surface roughness while maintaining the polishing rate. From the viewpoint, 1 or more is preferable, 1.5 or more is more preferable, 2 or more is more preferable, and from the same viewpoint, 100 or less is preferable, 90 or less is more preferable, and 80 or less is more preferable. More specifically, the mass ratio A / B is preferably 1 or more and 100 or less, more preferably 1.5 or more and 90 or less, and still more preferably 2 or more and 80 or less.
[リン酸塩(成分C)]
 本開示の研磨液組成物は、研磨速度を維持しつつ表面粗さの悪化を抑制する観点から、リン酸塩(以下、「成分C」ともいう)を含む。成分Cは、研磨速度を維持しつつ表面粗さの悪化を抑制する観点から、pH2の水性媒体中で完全には遊離せず(完全にはH3PO4(aq)とならず)、塩の形態(イオン)で存在するリン酸塩が好ましい。一又は複数の実施形態において、成分Cは、研磨液組成物中のリン酸塩の含有量と同じ量でpH2の水性媒体中に添加された場合、塩の形態(イオン)で存在する成分Cの割合が、pH2の水性媒体中に添加された成分Cの全量(100質量%)に対し、好ましくは10質量%以上、より好ましくは20質量%以上、更に好ましくは30質量%以上である。例えば、成分Cがリン酸二水素ナトリウムの場合、pH2の水性媒体に添加した成分Cの43質量%が塩の形態(イオン)で存在する。成分Cがピロリン酸二水素ナトリウムの場合、pH2の水性媒体に添加した成分Cの96質量%が塩の形態(イオン)で存在する。
[Phosphate (component C)]
The polishing composition of the present disclosure contains a phosphate (hereinafter also referred to as “component C”) from the viewpoint of suppressing deterioration of surface roughness while maintaining the polishing rate. Component C is not completely liberated in an aqueous medium at pH 2 (not completely H 3 PO 4 (aq)) from the viewpoint of suppressing the deterioration of the surface roughness while maintaining the polishing rate. The phosphate present in the form (ion) is preferred. In one or more embodiments, component C is present in salt form (ions) when added to an aqueous medium at pH 2 in the same amount as the phosphate content in the polishing composition. Is preferably 10% by mass or more, more preferably 20% by mass or more, and still more preferably 30% by mass or more with respect to the total amount (100% by mass) of Component C added to the aqueous medium having a pH of 2. For example, when the component C is sodium dihydrogen phosphate, 43% by mass of the component C added to the pH 2 aqueous medium is present in the form of salt (ion). When component C is sodium dihydrogen pyrophosphate, 96% by weight of component C added to the aqueous medium at pH 2 is present in the salt form (ions).
 成分Cのリン酸塩としては、研磨速度を維持しつつ表面粗さの悪化を抑制する観点から、アルカリ金属リン酸塩が好ましく、アルカリ金属リン酸水素塩がより好ましい。アルカリ金属リン酸水素塩の具体例としては、リン酸水素二カリウム、リン酸水素二ナトリウム、リン酸水素二アンモニウム、リン酸二水素カリウム、リン酸二水素ナトリウム、リン酸二水素アンモニウム、ピロリン酸二水素ナトリウム(酸性ピロリン酸ソーダ)、ピロリン酸ナトリウム、ヘキサメタリン酸ナトリウム、トリポリリン酸ナトリウム等が挙げられる。成分Cは、1種単独で用いてもよいし、2種以上を併用してもよい。 The phosphate of component C is preferably an alkali metal phosphate and more preferably an alkali metal hydrogen phosphate from the viewpoint of suppressing deterioration of surface roughness while maintaining the polishing rate. Specific examples of alkali metal hydrogen phosphate include dipotassium hydrogen phosphate, disodium hydrogen phosphate, diammonium hydrogen phosphate, potassium dihydrogen phosphate, sodium dihydrogen phosphate, ammonium dihydrogen phosphate, pyrophosphoric acid Examples include sodium dihydrogen (sodium acid pyrophosphate), sodium pyrophosphate, sodium hexametaphosphate, sodium tripolyphosphate, and the like. Component C may be used alone or in combination of two or more.
 本開示の研磨液組成物中の成分Cの含有量は、研磨速度を維持しつつ表面粗さの悪化を抑制する観点から、0.3質量%以上が好ましく、0.5質量%以上がより好ましく、0.8質量%以上が更に好ましく、1質量%以上が更に好ましく、そして、同様の観点から、10質量%以下が好ましく、7質量%以下がより好ましく、5質量%以下が更に好ましく、3質量%以下が更に好ましい。より具体的には、成分Cの含有量は、一又は複数の実施形態において、0.3質量%以上10質量%以下が好ましく、0.5質量%以上7質量%以下がより好ましく、1質量%以上5質量%以下が更に好ましく、1質量%以上3質量%以下が更に好ましい。成分Cの含有量は、その他の一又は複数の実施形態において、0.8質量%以上3質量%以下であることが好ましい。成分Cが2種以上の組合せである場合、成分Cの含有量は、それらの合計含有量をいう。 The content of Component C in the polishing liquid composition of the present disclosure is preferably 0.3% by mass or more, more preferably 0.5% by mass or more from the viewpoint of suppressing deterioration of surface roughness while maintaining the polishing rate. Preferably, 0.8% by mass or more is more preferable, 1% by mass or more is more preferable, and from the same viewpoint, 10% by mass or less is preferable, 7% by mass or less is more preferable, and 5% by mass or less is more preferable. 3 mass% or less is still more preferable. More specifically, the content of component C is preferably 0.3% by mass or more and 10% by mass or less, more preferably 0.5% by mass or more and 7% by mass or less in one or more embodiments, and 1% by mass. % To 5% by mass is more preferable, and 1% to 3% by mass is more preferable. In one or more other embodiments, the content of Component C is preferably 0.8% by mass or more and 3% by mass or less. When component C is a combination of two or more, the content of component C refers to the total content thereof.
 本開示の研磨液組成物中の成分Aと成分Cとの質量比A/C(成分Aの含有量/成分Cの含有量)は、研磨速度を維持しつつ表面粗さの悪化を抑制する観点から、0.5以上が好ましく、1以上がより好ましく、1.5以上が更に好ましく、そして、同様の観点から、26以下が好ましく、20以下がより好ましく、16以下が更に好ましい。より具体的には質量比A/Cは、0.5以上26以下が好ましく、1以上20以下がより好ましく、1.5以上16以下が更に好ましい。 The mass ratio A / C (content of component A / content of component C) of component A and component C in the polishing composition of the present disclosure suppresses deterioration of surface roughness while maintaining the polishing rate. From the viewpoint, 0.5 or more is preferable, 1 or more is more preferable, 1.5 or more is more preferable, and from the same viewpoint, 26 or less is preferable, 20 or less is more preferable, and 16 or less is more preferable. More specifically, the mass ratio A / C is preferably 0.5 to 26, more preferably 1 to 20, and still more preferably 1.5 to 16.
 本開示の研磨液組成物中の成分Bと成分Cとの質量比B/C(成分Bの含有量/成分Cの含有量)は、研磨速度を維持しつつ表面粗さの悪化を抑制する観点から、0.01以上が好ましく、0.03以上がより好ましく、0.05以上が更に好ましく、0.07以上が更に好ましく、0.1以上が更に好ましく、そして、同様の観点から、50以下が好ましく、30以下がより好ましく、20以下が更に好ましく、10以下が更に好ましく、3以下が更に好ましく、2以下が更に好ましく、1以下が更に好ましく、0.4以下が更に好ましい。より具体的には質量比B/Cは、0.01以上50以下が好ましく、0.01以上30以下がより好ましく、0.03以上20以下が更に好ましく、0.05以上10以下が更に好ましく、0.05以上3以下が更に好ましく、0.05以上1以下が更に好ましく、0.07以上0.4以下が更に好ましい。 The mass ratio B / C (component B content / component C content) of component B and component C in the polishing composition of the present disclosure suppresses deterioration of surface roughness while maintaining the polishing rate. From the viewpoint, 0.01 or more is preferable, 0.03 or more is more preferable, 0.05 or more is further preferable, 0.07 or more is further preferable, 0.1 or more is further preferable, and from the same viewpoint, 50 The following is preferable, 30 or less is more preferable, 20 or less is further preferable, 10 or less is further preferable, 3 or less is further preferable, 2 or less is further preferable, 1 or less is further preferable, and 0.4 or less is further preferable. More specifically, the mass ratio B / C is preferably 0.01 or more and 50 or less, more preferably 0.01 or more and 30 or less, further preferably 0.03 or more and 20 or less, and further preferably 0.05 or more and 10 or less. 0.05 to 3 is more preferable, 0.05 to 1 is further preferable, and 0.07 to 0.4 is further preferable.
[水]
 本開示の研磨液組成物は、媒体として水を含有する。水としては、例えば、蒸留水、イオン交換水、純水、超純水等が挙げられる。本開示の研磨液組成物中の水の含有量は、成分A、成分B、成分C及び後述する任意成分を除いた残余とすることができる。具体的には、本開示の研磨液組成物中の水の含有量は、研磨液組成物の取扱いがさらに容易になるため、55質量%以上が好ましく、70質量%以上がより好ましく、80質量%以上が更に好ましく、85質量%以上が更に好ましく、そして、研磨速度向上の観点から、99質量%以下が好ましく、98質量%以下がより好ましく、97質量%以下が更に好ましい。したがって、水の含有量は、55質量%以上99質量%以下が好ましく、70質量%以上98質量%以下がより好ましく、80質量%以上97質量%以下が更に好ましく、85質量%以上97質量%以下が更に好ましい。
[water]
The polishing liquid composition of the present disclosure contains water as a medium. Examples of water include distilled water, ion exchange water, pure water, and ultrapure water. The content of water in the polishing liquid composition of the present disclosure can be the remainder excluding Component A, Component B, Component C, and optional components described below. Specifically, the content of water in the polishing liquid composition of the present disclosure is preferably 55% by mass or more, more preferably 70% by mass or more, and 80% by mass because the handling of the polishing liquid composition is further facilitated. % Or more, more preferably 85% by mass or more, and from the viewpoint of improving the polishing rate, 99% by mass or less is preferable, 98% by mass or less is more preferable, and 97% by mass or less is more preferable. Therefore, the water content is preferably 55% by mass or more and 99% by mass or less, more preferably 70% by mass or more and 98% by mass or less, further preferably 80% by mass or more and 97% by mass or less, and 85% by mass or more and 97% by mass or less. The following is more preferable.
[その他の成分]
 本開示の研磨液組成物は、一又は複数の実施形態において、必要に応じてさらにその他の成分を含有することができる。その他の成分としては、例えば、成分B及びC以外の酸又はその塩、酸化剤、複素環芳香族化合物、脂肪族アミン化合物、脂環式アミン化合物、水溶性高分子、増粘剤、分散剤、防錆剤、塩基性物質、界面活性剤、可溶化剤等が挙げられる。本開示の研磨液組成物中の前記その他の成分の含有量は、0質量%以上が好ましく、0質量%超がより好ましく、0.1質量%以上が更に好ましく、そして、10質量%以下が好ましく、5質量%以下がより好ましい。より具体的には、その他の成分の含有量は、0質量%以上10質量%以下が好ましく、0質量%超10質量%以下がより好ましく、0.1質量%以上5質量%以下が更に好ましい。
[Other ingredients]
In one or a plurality of embodiments, the polishing composition of the present disclosure may further contain other components as necessary. Examples of other components include acids other than components B and C or salts thereof, oxidizing agents, heterocyclic aromatic compounds, aliphatic amine compounds, alicyclic amine compounds, water-soluble polymers, thickeners, and dispersants. , Antirust agents, basic substances, surfactants, solubilizers, and the like. The content of the other components in the polishing liquid composition of the present disclosure is preferably 0% by mass or more, more preferably more than 0% by mass, further preferably 0.1% by mass or more, and 10% by mass or less. Preferably, 5 mass% or less is more preferable. More specifically, the content of other components is preferably 0% by mass to 10% by mass, more preferably more than 0% by mass and 10% by mass or less, and further preferably 0.1% by mass to 5% by mass. .
 本開示の研磨液組成物は、一又は複数の実施形態において、リン酸エステル化合物を含んでもよいし、含まなくてもよい。
 また、本開示の研磨液組成物は、一又は複数の実施形態において、成分A、成分B、成分C及び水からなる研磨液組成物であってもよい。
In one or a plurality of embodiments, the polishing liquid composition of the present disclosure may or may not include a phosphate ester compound.
In one or a plurality of embodiments, the polishing liquid composition of the present disclosure may be a polishing liquid composition composed of Component A, Component B, Component C, and water.
[研磨液組成物のpH]
 本開示の研磨液組成物のpHは、研磨速度を維持しつつ表面粗さの悪化を抑制する観点から、0.9以上が好ましく、1以上がより好ましく、1.5以上が更に好ましく、そして、同様の観点から、6以下が好ましく、5以下がより好ましく、4.5以下が更に好ましい。より具体的には、本開示の研磨液組成物のpHは、0.9以上6以下が好ましく、1以上5以下がより好ましく、1以上4.5以下が更に好ましく、1.5以上4.5以下が更に好ましい。pHは、上述した成分B及び成分Cや公知のpH調整剤等を用いて調整することができる。本開示において、上記pHは、25℃における研磨液組成物のpHであり、pHメータを用いて測定でき、例えば、pHメータの電極を研磨液組成物へ浸漬して2分後の数値とすることができる。
[PH of polishing composition]
The pH of the polishing composition of the present disclosure is preferably 0.9 or more, more preferably 1 or more, still more preferably 1.5 or more, from the viewpoint of suppressing deterioration of surface roughness while maintaining the polishing rate. From the same viewpoint, 6 or less is preferable, 5 or less is more preferable, and 4.5 or less is more preferable. More specifically, the pH of the polishing composition of the present disclosure is preferably 0.9 or more, 6 or less, more preferably 1 or more and 5 or less, further preferably 1 or more and 4.5 or less, and 1.5 or more and 4. 5 or less is more preferable. The pH can be adjusted using the above-described Component B and Component C, a known pH adjusting agent, or the like. In the present disclosure, the pH is the pH of the polishing composition at 25 ° C. and can be measured using a pH meter. For example, the pH meter electrode is immersed in the polishing composition and the value is 2 minutes later. be able to.
[研磨液組成物の製造方法]
 本開示の研磨液組成物は、一又は複数の実施形態において、成分A、成分B、成分C及び水を配合してなる、ガラスハードディスク基板用研磨液組成物とすることができる。例えば、本開示の研磨液組成物は、成分A、成分B、成分C及び水と、さらに所望により、その他の成分とを公知の方法で配合することにより製造できる。すなわち、本開示は、その他の態様において、少なくとも成分A、成分B、成分C及び水を配合する工程を含む、研磨液組成物の製造方法(以下、「本開示の研磨液組成物の製造方法」ともいう)に関する。本開示において「配合する」とは、成分A、成分B、成分C及び水、並びに必要に応じてその他の成分を同時に又は任意の順に混合することを含む。成分Aの砥粒は、濃縮されたスラリーの状態で混合されてもよいし、水等で希釈してから混合されてもよい。成分Aが複数種類の砥粒からなる場合、複数種類の砥粒は、同時に又はそれぞれ別々に配合できる。成分Cが複数種類のリン酸塩からなる場合、複数種類のリン酸塩は、同時に又はそれぞれ別々に配合できる。前記配合は、例えば、ホモミキサー、ホモジナイザー、超音波分散機及び湿式ボールミル等の混合器を用いて行うことができる。本開示の研磨液組成物の製造方法における各成分の好ましい配合量は、上述した本開示の研磨液組成物中の各成分の好ましい含有量と同じとすることができる。
[Method for producing polishing composition]
In one or a plurality of embodiments, the polishing liquid composition of the present disclosure may be a polishing liquid composition for a glass hard disk substrate formed by blending Component A, Component B, Component C and water. For example, the polishing composition of the present disclosure can be produced by blending Component A, Component B, Component C, and water, and, if desired, other components by a known method. That is, in another aspect, the present disclosure includes a method for producing a polishing liquid composition (hereinafter referred to as “a method for producing a polishing liquid composition of the present disclosure”, which includes a step of blending at least component A, component B, component C and water. "). In the present disclosure, “mixing” includes mixing component A, component B, component C and water, and optionally other components simultaneously or in any order. The abrasive grains of component A may be mixed in a concentrated slurry state, or may be mixed after being diluted with water or the like. When component A is composed of a plurality of types of abrasive grains, the plurality of types of abrasive grains can be blended simultaneously or separately. When component C consists of a plurality of types of phosphates, the plurality of types of phosphates can be blended simultaneously or separately. The said mixing | blending can be performed using mixers, such as a homomixer, a homogenizer, an ultrasonic disperser, and a wet ball mill, for example. The preferable compounding amount of each component in the manufacturing method of the polishing liquid composition of the present disclosure can be the same as the preferable content of each component in the polishing liquid composition of the present disclosure described above.
 本開示において「研磨液組成物中の各成分の含有量」とは、使用時、すなわち、研磨液組成物の研磨への使用を開始する時点における前記各成分の含有量をいう。本開示の研磨液組成物は、その保存安定性が損なわれない範囲で濃縮された状態で保存及び供給されてもよい。この場合、製造及び輸送コストを更に低くできる点で好ましい。本開示の研磨液組成物の濃縮物は、使用時に、必要に応じて前述の水で適宜希釈して使用すればよい。希釈倍率は、希釈した後に上述した各成分の含有量(使用時)を確保できれば特に限定されるものではなく、例えば、10~100倍とすることができる。 In the present disclosure, the “content of each component in the polishing liquid composition” means the content of each component at the time of use, that is, when the polishing liquid composition starts to be used for polishing. The polishing composition of the present disclosure may be stored and supplied in a concentrated state as long as its storage stability is not impaired. In this case, it is preferable in that the manufacturing and transportation costs can be further reduced. The concentrate of the polishing liquid composition of the present disclosure may be used by appropriately diluting with the above-described water as necessary at the time of use. The dilution rate is not particularly limited as long as the content (in use) of each component described above can be secured after dilution, and can be, for example, 10 to 100 times.
[研磨液キット]
 本開示は、その他の態様において、本開示の研磨液組成物を製造するためのキット(以下、「本開示の研磨液キット」ともいう)に関する。本開示の研磨液キットの一実施形態としては、例えば、成分A及び水を含む砥粒分散液と、成分B及び成分Cを含む添加剤水溶液と、を相互に混合されない状態で含む、研磨液キット(2液型研磨液組成物)が挙げられる。前記砥粒分散液と前記添加剤水溶液とは、使用時に混合され、必要に応じて水を用いて希釈される。前記砥粒分散液及び前記添加剤水溶液にはそれぞれ必要に応じて、上述したその他の成分をさらに含有させることができる。本開示の研磨液キットによれば、研磨速度を維持しつつ、洗浄後の表面粗さの悪化を抑制できる研磨液組成物が得られうる。
[Polishing liquid kit]
In another aspect, the present disclosure relates to a kit for producing the polishing liquid composition of the present disclosure (hereinafter, also referred to as “polishing liquid kit of the present disclosure”). As one embodiment of the polishing liquid kit of the present disclosure, for example, a polishing liquid containing an abrasive dispersion liquid containing component A and water and an aqueous additive solution containing component B and component C are not mixed with each other. A kit (two-pack type polishing composition) can be mentioned. The abrasive dispersion and the additive aqueous solution are mixed at the time of use, and diluted with water as necessary. The abrasive dispersion and the additive aqueous solution may further contain other components as described above, if necessary. According to the polishing liquid kit of the present disclosure, it is possible to obtain a polishing liquid composition that can suppress the deterioration of the surface roughness after cleaning while maintaining the polishing rate.
[被研磨ガラス基板]
 本開示の研磨液組成物を用いて研磨される被研磨ガラス基板は、一又は複数の実施形態において、ガラスハードディスク基板の製造工程で使用されるガラス基板である。前記ガラス基板の材質としては、例えば、石英ガラス、ソーダライムガラス、アルミノシリケートガラス、ボロシリケートガラス、アルミノボロシリケートガラス、無アルカリガラス、結晶化ガラス等が挙げられる。本開示の研磨液組成物は、一又は複数の実施形態において、アルミノシリケートガラス基板やアルミノボロシリケートガラス基板の研磨に好適に用いられる。本開示の被研磨ガラス基板は、一又は複数の実施形態において、水平磁気記録用基板、垂直磁気記録用基板、熱アシスト記録(HAMR)用基板のいずれにも用いることができる。
[Polished glass substrate]
The glass substrate to be polished by using the polishing composition of the present disclosure is a glass substrate used in the manufacturing process of a glass hard disk substrate in one or a plurality of embodiments. Examples of the material of the glass substrate include quartz glass, soda lime glass, aluminosilicate glass, borosilicate glass, aluminoborosilicate glass, alkali-free glass, and crystallized glass. In one or a plurality of embodiments, the polishing composition of the present disclosure is suitably used for polishing an aluminosilicate glass substrate or an aluminoborosilicate glass substrate. In one or a plurality of embodiments, the glass substrate to be polished according to the present disclosure can be used as any of a horizontal magnetic recording substrate, a perpendicular magnetic recording substrate, and a thermally assisted recording (HAMR) substrate.
 被研磨ガラス基板の形状としては、例えば、ディスク状、プレート状、スラブ状、プリズム状等の平面部を有する形状や、レンズ等の曲面部を有する形状が挙げられる。中でも、ディスク状の被研磨ガラス基板が適している。ディスク状の被研磨ガラス基板の場合、その外径は例えば2mm以上100mm以下程度であり、その厚みは例えば0.4mm以上2mm以下程度である。 Examples of the shape of the glass substrate to be polished include a shape having a flat portion such as a disk shape, a plate shape, a slab shape, and a prism shape, and a shape having a curved surface portion such as a lens. Of these, a disk-shaped glass substrate to be polished is suitable. In the case of a disk-shaped polished glass substrate, the outer diameter is, for example, about 2 mm to 100 mm, and the thickness is, for example, about 0.4 mm to 2 mm.
[ガラスハードディスク基板の製造方法]
 一般に、ガラスハードディスク基板は、溶融ガラスの型枠プレス又はシートガラスから切り出す方法によってガラス基材を得る工程から、形状加工工程、端面研磨工程、粗研削工程、精研削工程、粗研磨工程、仕上げ研磨工程、化学強化工程を経て製造される。化学強化工程は仕上げ研磨工程の前に施しても良い。また各工程の間には洗浄工程が含まれることがある。研磨工程後のガラスハードディスク基板は、磁性膜の形成を含む記録部形成工程を経ることで磁気ディスク化されたガラスハードディスク基板となる。本開示の研磨液組成物は、仕上げ研磨工程における研磨(仕上げ研磨)に使用されることが好ましい。
[Glass hard disk substrate manufacturing method]
In general, a glass hard disk substrate is obtained from a process of obtaining a glass substrate by a mold press of molten glass or a method of cutting out from sheet glass, a shape processing process, an end surface polishing process, a rough grinding process, a fine grinding process, a rough polishing process, and a finish polishing. It is manufactured through a process and a chemical strengthening process. The chemical strengthening step may be performed before the finish polishing step. In addition, a cleaning process may be included between the processes. The glass hard disk substrate after the polishing process becomes a glass hard disk substrate formed into a magnetic disk through a recording portion forming process including the formation of a magnetic film. The polishing composition of the present disclosure is preferably used for polishing (finish polishing) in the final polishing step.
 したがって、本開示は、その他の態様において、本開示の研磨液組成物を用いて被研磨ガラス基板を研磨する工程(以下、「本開示の研磨液組成物を用いた研磨工程」ともいう)を含む、ガラスハードディスク基板の製造方法(以下、「本開示の基板製造方法」ともいう)に関する。本開示の基板製造方法によれば、本開示における研磨液組成物を用いることで、高品質の磁気ディスク基板を高収率で、生産性よく製造できるという効果が奏されうる。 Therefore, in another aspect, the present disclosure includes a step of polishing a glass substrate to be polished using the polishing liquid composition of the present disclosure (hereinafter, also referred to as “polishing step using the polishing liquid composition of the present disclosure”). And a glass hard disk substrate manufacturing method (hereinafter also referred to as “substrate manufacturing method of the present disclosure”). According to the substrate manufacturing method of the present disclosure, by using the polishing composition in the present disclosure, an effect that a high-quality magnetic disk substrate can be manufactured with high yield and high productivity can be achieved.
 (研磨工程)
 本開示の研磨液組成物を用いた研磨工程は、一又は複数の実施形態において、被研磨ガラス基板の研磨対象面に本開示の研磨液組成物を供給し、前記研磨対象面に研磨パッドを接触させ、所定の圧力(荷重)をかけながら、研磨パッド及び被研磨基板の少なくとも一方を動かして研磨する工程である。また、本開示の研磨液組成物を用いた研磨工程は、その他の一又は複数の実施形態において、不織布状の有機高分子系研磨布等の研磨パッドを貼り付けた定盤で被研磨基板を挟み込み、本開示の研磨液組成物を研磨機に供給しながら、定盤や被研磨基板を動かして被研磨基板を研磨する工程である。
(Polishing process)
In one or a plurality of embodiments, the polishing step using the polishing liquid composition of the present disclosure is performed by supplying the polishing liquid composition of the present disclosure to the polishing target surface of the glass substrate to be polished, and providing the polishing pad on the polishing target surface. In this step, polishing is performed by moving at least one of the polishing pad and the substrate to be polished while applying contact and applying a predetermined pressure (load). Further, in one or a plurality of other embodiments, the polishing step using the polishing liquid composition of the present disclosure is performed by using a surface plate to which a polishing pad such as a non-woven organic polymer polishing cloth is attached. It is a step of polishing the substrate to be polished by moving the surface plate or the substrate to be polished while sandwiching and supplying the polishing composition of the present disclosure to the polishing machine.
 被研磨基板の研磨工程が多段階で行われる場合は、本開示の研磨液組成物を用いた研磨工程は2段階目以降に行われるのが好ましく、最終研磨工程又は仕上げ研磨工程で行われるのがより好ましい。その際、前工程の研磨材や研磨液組成物の混入を避けるために、それぞれ別の研磨機を使用してもよく、またそれぞれ別の研磨機を使用した場合では、研磨工程毎に被研磨基板を洗浄することが好ましい。さらに、使用した研磨液を再利用する循環研磨においても、本開示の研磨液組成物は使用できる。研磨機としては、特に限定されず、基板研磨用の公知の研磨機が使用できる。 When the polishing process of the substrate to be polished is performed in multiple stages, the polishing process using the polishing composition of the present disclosure is preferably performed in the second stage or later, and is performed in the final polishing process or the final polishing process. Is more preferable. At that time, in order to avoid mixing of the polishing material and polishing liquid composition in the previous process, different polishing machines may be used, and in the case of using different polishing machines, polishing is performed for each polishing process. It is preferable to clean the substrate. Furthermore, the polishing composition of the present disclosure can also be used in cyclic polishing in which the used polishing liquid is reused. The polishing machine is not particularly limited, and a known polishing machine for substrate polishing can be used.
 本開示の研磨液組成物を用いた研磨工程で使用される研磨パッドとしては、特に制限はなく、例えば、スエードタイプ、不織布タイプ、ポリウレタン独立発泡タイプ、又はこれらを積層した二層タイプ等の研磨パッドを使用することができ、研磨速度の観点から、スエードタイプの研磨パッドが好ましい。 There is no restriction | limiting in particular as a polishing pad used by the grinding | polishing process using the polishing liquid composition of this indication, For example, polishing of a suede type, a nonwoven fabric type, a polyurethane independent foam type, or the two-layer type which laminated | stacked these etc. A pad can be used, and a suede type polishing pad is preferable from the viewpoint of polishing rate.
 研磨パッドの表面部材の平均開孔径は、研磨速度向上及びパッド寿命の観点から、50μm以下が好ましく、45μm以下がより好ましく、40μm以下が更に好ましく、35μm以下が更に好ましく、そして、パッドの研磨液保持性の観点から、0.01μm以上が好ましく、0.1μm以上がより好ましく、1μm以上が更に好ましく、10μm以上が更に好ましい。より具体的には、研磨パッドの表面部材の平均開孔径は、0.01μm以上50μm以下が好ましく、0.1μm以上45μm以下がより好ましく、1μm以上40μm以下が更に好ましく、10μm以上35μm以下が更に好ましい。研磨パッドの開孔径の最大値は、研磨速度維持の観点から、100μm以下が好ましく、70μm以下がより好ましく、60μm以下が更に好ましく、50μm以下が更に好ましい。 The average pore diameter of the surface member of the polishing pad is preferably 50 μm or less, more preferably 45 μm or less, still more preferably 40 μm or less, further preferably 35 μm or less, from the viewpoint of improving the polishing rate and the pad life, and the pad polishing liquid From the viewpoint of retention, 0.01 μm or more is preferable, 0.1 μm or more is more preferable, 1 μm or more is further preferable, and 10 μm or more is more preferable. More specifically, the average opening diameter of the surface member of the polishing pad is preferably 0.01 μm or more and 50 μm or less, more preferably 0.1 μm or more and 45 μm or less, further preferably 1 μm or more and 40 μm or less, and further preferably 10 μm or more and 35 μm or less. preferable. The maximum value of the opening diameter of the polishing pad is preferably 100 μm or less, more preferably 70 μm or less, still more preferably 60 μm or less, and even more preferably 50 μm or less from the viewpoint of maintaining the polishing rate.
 本開示の研磨液組成物を用いた研磨工程における研磨荷重は、研磨速度向上の観点から、3kPa以上が好ましく、4kPa以上がより好ましく、そして、研磨中に研磨機に振動が発生しないように安定に研磨できる観点から、40kPa以下が好ましく、15kPa以下が更により好ましい。より具体的には、研磨荷重は、3kPa以上40kPa以下が好ましく、4kPa以上15kPa以下がより好ましい。本開示において研磨荷重とは、研磨時に被研磨基板の研磨面に加えられる定盤の圧力をいう。また、研磨荷重の調整は、定盤及び被研磨基板のうち少なくとも一方に空気圧や重りを負荷することにより行うことができる。 The polishing load in the polishing step using the polishing liquid composition of the present disclosure is preferably 3 kPa or more, more preferably 4 kPa or more from the viewpoint of improving the polishing rate, and stable so that no vibration is generated in the polishing machine during polishing. From the viewpoint of being able to be polished, it is preferably 40 kPa or less, and more preferably 15 kPa or less. More specifically, the polishing load is preferably 3 kPa or more and 40 kPa or less, and more preferably 4 kPa or more and 15 kPa or less. In the present disclosure, the polishing load refers to the pressure of the surface plate applied to the polishing surface of the substrate to be polished during polishing. The polishing load can be adjusted by applying air pressure or weight to at least one of the surface plate and the substrate to be polished.
 本開示の研磨液組成物を用いた研磨工程における、本開示の研磨液組成物の供給速度は、コスト低減及び研磨速度向上の観点から、被研磨基板1cm2あたり、0.01mL/分以上1mL/分以下が好ましく、0.025mL/分以上0.6mL/分以下がより好ましく、0.05mL/分以上0.4mL/分以下が更に好ましく、0.1mL/分以上0.4mL/分以下が更により好ましい。また循環研磨をする場合であれば研磨液組成物を再利用できるので供給流量は上記記載の流量よりも多くなってもよい。 In the polishing process using the polishing composition of the present disclosure, the supply rate of the polishing composition of the present disclosure is 0.01 mL / min or more per 1 cm 2 of the substrate to be polished from the viewpoint of cost reduction and polishing rate improvement. / Min or less is preferable, 0.025 mL / min or more and 0.6 mL / min or less is more preferable, 0.05 mL / min or more and 0.4 mL / min or less is more preferable, 0.1 mL / min or more and 0.4 mL / min or less. Is even more preferred. In addition, since the polishing composition can be reused in the case of cyclic polishing, the supply flow rate may be higher than the flow rate described above.
 本開示の研磨液組成物を研磨機へ供給する方法としては、例えばポンプ等を用いて連続的に供給を行う方法が挙げられる。研磨液組成物を研磨機へ供給する際は、全ての成分を含んだ1液で供給する方法の他、研磨液組成物の安定性等を考慮して、複数の配合用成分液に分け、2液以上で供給することもできる。後者の場合、例えば供給配管中又は被研磨基板上で、上記複数の配合用成分液が混合され、本開示の研磨液組成物となる。 Examples of a method of supplying the polishing composition of the present disclosure to a polishing machine include a method of continuously supplying using a pump or the like. When supplying the polishing composition to the polishing machine, in addition to the method of supplying one component containing all the components, considering the stability of the polishing composition, etc., it is divided into a plurality of compounding component liquids, Two or more liquids can be supplied. In the latter case, for example, the plurality of compounding component liquids are mixed in the supply pipe or on the substrate to be polished to obtain the polishing liquid composition of the present disclosure.
 (洗浄工程)
 本開示の基板製造方法は、一又は複数の実施形態において、本開示の研磨液組成物を用いた研磨が施されたガラス基板(被洗浄基板)を、上述の洗浄剤組成物を用いて洗浄する工程(以下、「洗浄工程」ともいう)を含む。洗浄工程における被洗浄基板には、本開示の研磨液組成物を使用した研磨工程の直後のガラス基板や、研磨工程後に乾燥を防ぐための水等への浸漬工程、予備洗浄として水洗浄工程や酸洗浄工程等を経たガラス基板が含まれる。この洗浄工程は、一又は複数の実施形態において、(a)被洗浄基板を洗浄剤組成物に浸漬すること、及び/又は、(b)洗浄剤組成物を射出して被洗浄基板の表面上に洗浄剤組成物を供給することにより行われる。
(Washing process)
In one or a plurality of embodiments, the substrate manufacturing method of the present disclosure is a method of cleaning a glass substrate (substrate to be cleaned) that has been polished using the polishing liquid composition of the present disclosure, using the cleaning composition described above. Step (hereinafter also referred to as “cleaning step”). The substrate to be cleaned in the cleaning process includes a glass substrate immediately after the polishing process using the polishing composition of the present disclosure, a dipping process in water to prevent drying after the polishing process, a water cleaning process as preliminary cleaning, A glass substrate that has undergone an acid cleaning step or the like is included. In one or a plurality of embodiments, this cleaning step includes (a) immersing the substrate to be cleaned in the cleaning composition, and / or (b) injecting the cleaning composition on the surface of the substrate to be cleaned. Is performed by supplying a cleaning composition to
 前記方法(a)において、被洗浄基板の洗浄剤組成物への浸漬条件としては、特に制限されなくてもよい。例えば、洗浄剤組成物の温度は、安全性及び操業性の観点から、20℃以上100℃以下が挙げられ、浸漬時間は、洗浄剤組成物による洗浄性と生産効率の観点から、10秒以上60分以内が挙げられる。残留物の除去性及び残留物の分散性を高める観点から、洗浄剤組成物には超音波振動が付与されていると好ましい。超音波の周波数としては、例えば、20kHz以上2000kHz以下が挙げられる。 In the method (a), the conditions for immersing the substrate to be cleaned in the cleaning composition may not be particularly limited. For example, the temperature of the cleaning composition is 20 ° C. or more and 100 ° C. or less from the viewpoint of safety and operability, and the immersion time is 10 seconds or more from the viewpoint of cleaning performance and production efficiency by the cleaning composition. Within 60 minutes. From the viewpoint of improving the removability of the residue and the dispersibility of the residue, it is preferable that ultrasonic vibration is applied to the cleaning composition. Examples of the ultrasonic frequency include 20 kHz to 2000 kHz.
 前記方法(b)では、残留物の洗浄性や油分の溶解性を促進させる観点から、超音波振動が与えられている洗浄剤組成物を射出して、被洗浄基板の表面に洗浄剤組成物を接触させて当該表面を洗浄するか、又は、洗浄剤組成物を被洗浄基板の表面上に射出により供給し、洗浄剤組成物が供給された当該表面を洗浄用ブラシでこすることにより洗浄することが好ましい。さらには、超音波振動が与えられている洗浄剤組成物を射出により洗浄対象の表面に供給し、かつ、洗浄剤組成物が供給された当該表面を洗浄用ブラシでこすることにより洗浄することが好ましい。 In the method (b), from the viewpoint of promoting the cleaning property of the residue and the solubility of the oil, the cleaning agent composition to which ultrasonic vibration is applied is injected to the cleaning substrate surface. The surface is contacted to clean the surface, or the cleaning composition is supplied by injection onto the surface of the substrate to be cleaned and then cleaned by rubbing the surface supplied with the cleaning composition with a cleaning brush. It is preferable to do. Furthermore, the cleaning composition to which ultrasonic vibration is applied is supplied to the surface to be cleaned by injection, and the surface to which the cleaning composition is supplied is cleaned by rubbing with a cleaning brush. Is preferred.
 洗浄剤組成物を被洗浄基板の表面上に供給する手段としては、スプレーノズル等の公知の手段を用いることができる。洗浄用ブラシとしては、例えば、ナイロンブラシやPVA(ポリビニルアルコール)スポンジブラシ等の公知のものが挙げられる。超音波の周波数としては、前記方法(a)で好ましく採用される値と同様であればよい。 As means for supplying the cleaning composition onto the surface of the substrate to be cleaned, known means such as a spray nozzle can be used. Examples of the cleaning brush include known brushes such as a nylon brush and a PVA (polyvinyl alcohol) sponge brush. The ultrasonic frequency may be the same as the value preferably adopted in the method (a).
 洗浄工程では、前記方法(a)及び/又は前記方法(b)に加えて、揺動洗浄、スピンナー等の回転を利用した洗浄、パドル洗浄等の公知の洗浄を用いる工程を1つ以上含んでもよい。 In addition to the method (a) and / or the method (b), the cleaning step may include one or more steps using known cleaning such as rocking cleaning, cleaning using rotation of a spinner, paddle cleaning, and the like. Good.
 洗浄工程で用いる洗浄剤組成物としては、例えば、アルカリ剤、水、及び必要に応じて各種添加剤を含有するものが使用できる。アルカリ剤は、無機アルカリ剤及び有機アルカリ剤の少なくとも一方を用いることができる。無機アルカリ剤としては、例えば、アンモニア、水酸化カリウム、及び水酸化ナトリウム等が挙げられる。有機アルカリ剤としては、例えば、ヒドロキシアルキルアミン、テトラメチルアンモニウムハイドロオキサイド、及びコリンから選ばれる少なくとも1種が挙げられる。各種添加剤としては、例えば、非イオン界面活性剤、キレート剤、エーテルカルボキシレート、脂肪酸、アニオン性界面活性剤、水溶性高分子、消泡剤、アルコール類、防腐剤、酸化防止剤等が挙げられる。 As the cleaning composition used in the cleaning process, for example, an alkaline agent, water, and various additives as required can be used. As the alkali agent, at least one of an inorganic alkali agent and an organic alkali agent can be used. Examples of the inorganic alkaline agent include ammonia, potassium hydroxide, and sodium hydroxide. Examples of the organic alkali agent include at least one selected from hydroxyalkylamine, tetramethylammonium hydroxide, and choline. Examples of various additives include nonionic surfactants, chelating agents, ether carboxylates, fatty acids, anionic surfactants, water-soluble polymers, antifoaming agents, alcohols, preservatives, antioxidants, and the like. It is done.
 洗浄工程で用いる洗浄剤組成物のpHは、基板上の残留物の分散性を向上させる観点から、例えば、8以上13以下が好ましい。上記のpHは、25℃における洗浄剤組成物のpHであり、pHメータ(東亜電波工業株式会社、HM-30G)を用いて測定でき、例えば、電極を洗浄剤組成物へ浸漬して3分後の数値を採用できる。 The pH of the cleaning composition used in the cleaning step is preferably 8 or more and 13 or less, for example, from the viewpoint of improving the dispersibility of the residue on the substrate. The above pH is the pH of the cleaning composition at 25 ° C. and can be measured using a pH meter (Toa Denpa Kogyo Co., Ltd., HM-30G). For example, the electrode is immersed in the cleaning composition for 3 minutes. Later numbers can be adopted.
 (磁性膜の形成工程)
 本開示の基板製造方法は、一又は複数の実施形態において、被研磨ガラス基板の研磨工程及び洗浄工程後のガラス基板上に磁性膜を形成する工程、或いは、磁性膜の形成を含む記録部形成工程を有してもよい。
(Magnetic film formation process)
In one or a plurality of embodiments, a substrate manufacturing method of the present disclosure includes a step of forming a magnetic film on a glass substrate after a polishing step and a cleaning step of a glass substrate to be polished, or a recording unit formation including formation of a magnetic film You may have a process.
[ガラス基板の研磨方法]
 本開示は、その他の態様として、本開示の研磨液組成物を用いて被研磨ガラス基板を研磨することを含む、ガラス基板の研磨方法(以下、「本開示の研磨方法」ともいう)に関する。本開示の研磨方法を使用することにより、高品質の磁気ディスク基板を高収率で、生産性よく製造できるという効果が奏されうる。本開示の研磨方法における被研磨ガラス基板としては、上述のとおり、ガラスハードディスク基板の製造に使用されるものが挙げられる。具体的な研磨の方法及び条件は、上述した本開示の基板製造方法と同じ方法及び条件とすることができる。
[Glass substrate polishing method]
As another aspect, the present disclosure relates to a glass substrate polishing method (hereinafter, also referred to as “polishing method of the present disclosure”) including polishing a glass substrate to be polished using the polishing composition of the present disclosure. By using the polishing method of the present disclosure, an effect that a high-quality magnetic disk substrate can be manufactured with high yield and high productivity can be achieved. Examples of the glass substrate to be polished in the polishing method of the present disclosure include those used for manufacturing a glass hard disk substrate as described above. Specific polishing methods and conditions may be the same methods and conditions as the above-described substrate manufacturing method of the present disclosure.
 本開示の研磨液組成物を用いて被研磨ガラス基板を研磨することは、一又は複数の実施形態において、本開示の研磨液組成物を被研磨基板の研磨対象面に供給し、前記研磨対象面に研磨パッドを接触させ、前記研磨パッド及び前記被研磨基板の少なくとも一方を動かして研磨することであり、或いは、不織布状の有機高分子系研磨布等の研磨パッドを貼り付けた定盤で被研磨基板を挟み込み、本開示の研磨液組成物を研磨機に供給しながら、定盤や被研磨基板を動かして被研磨基板を研磨することである。 Polishing a glass substrate to be polished using the polishing liquid composition of the present disclosure includes supplying the polishing liquid composition of the present disclosure to the surface to be polished of the substrate to be polished in one or a plurality of embodiments. A polishing pad is brought into contact with the surface, and polishing is performed by moving at least one of the polishing pad and the substrate to be polished, or a surface plate on which a polishing pad such as a non-woven organic polymer polishing cloth is attached. The substrate to be polished is sandwiched and the surface plate or the substrate to be polished is moved to polish the substrate to be polished while supplying the polishing composition of the present disclosure to the polishing machine.
 本開示は、さらに以下の一又は複数の実施形態に関する。
 <1> 砥粒(成分A)、スルファミン酸(成分B)、リン酸塩(成分C)、及び水を含有する、ガラスハードディスク基板用研磨液組成物。
The present disclosure further relates to one or more of the following embodiments.
<1> A polishing liquid composition for a glass hard disk substrate, comprising abrasive grains (component A), sulfamic acid (component B), phosphate (component C), and water.
 <2> 成分Aがシリカ粒子である、<1>に記載の研磨液組成物。
 <3> 成分Aがコロイダルシリカである、<1>に記載の研磨液組成物。
 <4> 成分Aの含有量は、0.1質量%以上が好ましく、1質量%以上がより好ましく、3質量%以上が更に好ましい、<1>から<3>のいずれかに記載の研磨液組成物。
 <5> 成分Aの含有量は、20質量%以下が好ましく、15質量%以下がより好ましく、10質量%以下が更に好ましい、<1>から<4>のいずれかに記載の研磨液組成物。
 <6> 成分Aの含有量は、0.1質量%以上20質量%以下が好ましく、1質量%以上15質量%以下が更に好ましい、<1>から<5>のいずれかに記載の研磨液組成物。
 <7> 成分Bの含有量は、0.05質量%以上が好ましく、0.1質量%以上がより好ましく、0.15質量%以上が更に好ましく、0.3質量%以上が更に好ましく、0.5質量%以上が更に好ましい、<1>から<6>のいずれかに記載の研磨液組成物。
 <8> 成分Bの含有量は、10質量%以下が好ましく、7質量%以下がより好ましく、5質量%以下が更に好ましく、4質量%以下が更に好ましく、2質量%以下が更に好ましい、<1>から<7>のいずれかに記載の研磨液組成物。
 <9> 成分Bの含有量は、0.05質量%以上10質量%以下が好ましく、0.1質量%以上7質量%以下がより好ましく、0.15質量%以上5質量%以下が更に好ましく、0.3質量%以上4質量%以下が更に好ましく、0.5質量%以上2質量%以下が更に好ましい、<1>から<8>のいずれかに記載の研磨液組成物。
 <10> 成分Aと成分Bとの質量比A/Bは、1以上が好ましく、1.5以上がより好ましく、2以上が更に好ましい、<1>から<9>のいずれかに記載の研磨液組成物。
 <11> 成分Aと成分Bとの質量比A/Bは、100以下が好ましく、90以下がより好ましく、80以下が更に好ましい、<1>から<10>のいずれかに記載の研磨液組成物。
 <12> 成分Aと成分Bとの質量比A/Bは、1以上100以下が好ましく、1.5以上90以下がより好ましく、2以上80以下が更に好ましい、<1>から<11>のいずれかに記載の研磨液組成物。
 <13> 成分Cは、研磨液組成物中の前記リン酸塩の含有量と同じ量でpH2の水性媒体中に添加された場合、塩の形態で存在する成分Cの割合が、pH2の水性媒体中に添加された成分Cの全量に対し、好ましくは10質量%以上、より好ましくは20質量%以上、更に好ましくは30質量%以上である、<1>から<12>のいずれかに記載の研磨液組成物。
 <14> 成分Cは、リン酸水素二カリウム、リン酸水素二ナトリウム、リン酸水素二アンモニウム、リン酸二水素カリウム、リン酸二水素ナトリウム、リン酸二水素アンモニウム、ピロリン酸二水素ナトリウム、ピロリン酸ナトリウム、ヘキサメタリン酸ナトリウム、及びトリポリリン酸ナトリウムから選ばれる1種又は2種以上である、<1>から<13>のいずれかに記載の研磨液組成物。
 <15> 成分Cの含有量は、0.3質量%以上が好ましく、0.5質量%以上がより好ましく、0.8質量%以上が更に好ましく、1質量%以上が更に好ましい、<1>から<14>のいずれかに記載の研磨液組成物。
 <16> 成分Cの含有量は、10質量%以下が好ましく、7質量%以下がより好ましく、5質量%以下が更に好ましく、3質量%以下が更に好ましい、<1>から<15>のいずれかに記載の研磨液組成物。
 <17> 成分Cの含有量は、0.3質量%以上10質量%以下が好ましく、0.5質量%以上7質量%以下がより好ましく、1質量%以上5質量%以下が更に好ましく、1質量%以上3質量%以下が更に好ましい、<1>から<16>のいずれかに記載の研磨液組成物。
 <18> 成分Cの含有量は、0.8質量%以上3質量%以下である、<1>から<16>のいずれかに記載の研磨液組成物。
 <19> 成分Aと成分Cとの質量比A/Cは、0.5以上が好ましく、1以上がより好ましく、1.5以上が更に好ましい、<1>から<18>のいずれかに記載の研磨液組成物。
 <20> 成分Aと成分Cとの質量比A/Cは、26以下が好ましく、20以下がより好ましく、16以下が更に好ましい、<1>から<19>のいずれかに記載の研磨液組成物。
 <21> 成分Aと成分Cとの質量比A/Cは、0.5以上26以下が好ましく、1以上20以下がより好ましく、1.5 以上16以下が更に好ましい、<1>から<20>のいずれかに記載の研磨液組成物。
 <22> 成分Bと成分Cとの質量比B/Cは、0.01以上が好ましく、0.03以上がより好ましく、0.05以上が更に好ましく、0.07以上が更に好ましく、0.1以上が更に好ましい、<1>から<21>のいずれかに記載の研磨液組成物。
 <23> 成分Bと成分Cとの質量比B/Cは、50以下が好ましく、30以下がより好ましく、20以下が更に好ましく、10以下が更に好ましく、3以下が更に好ましく、2以下が更に好ましく、1以下が更に好ましく、0.4以下が更に好ましい、<1>から<22>のいずれかに記載の研磨液組成物。
 <24> 成分Bと成分Cとの質量比B/Cは、0.01以上50以下が好ましく、0.01以上30以下がより好ましく、0.03以上20以下が更に好ましく、0.05以上10以下が更に好ましく、0.05以上3以下が更に好ましく、0.05以上1以下が更に好ましく、0.07以上0.4以下が更に好ましい、<1>から<23>のいずれかに記載の研磨液組成物。
 <25> リン酸エステル化合物を含まない、<1>から<24>のいずれかに記載の研磨液組成物。
 <26> 成分A、成分B、成分C及び水からなる、<1>から<25>のいずれかに記載の研磨液組成物。
 <27> pHは、0.9以上が好ましく、1以上がより好ましく、1.5以上が更に好ましい、<1>から<26>のいずれかに記載の研磨液組成物。
 <28> pHは、6以下が好ましく、5以下がより好ましく、4.5以下が更に好ましい、<1>から<27>のいずれかに記載の研磨液組成物。
 <29> pHは、0.9以上6以下が好ましく、1以上5以下がより好ましく、1以上4.5以下が更に好ましく、1.5以上4.5以下が更に好ましい、<1>から<28>のいずれかに記載の研磨液組成物。
 <30> ガラスハードディスク基板が、アルミノボロシリケートガラス基板である、<1>から<29>のいずれかに記載の研磨液組成物。
 <31> <1>から<30>のいずれかに記載の研磨液組成物を用いて被研磨ガラス基板を研磨する工程を含む、ガラスハードディスク基板の製造方法。
 <32> <1>から<30>のいずれかに記載の研磨液組成物を用いて被研磨ガラス基板を研磨することを含む、ガラス基板の研磨方法。
<2> The polishing composition according to <1>, wherein component A is silica particles.
<3> The polishing composition according to <1>, wherein component A is colloidal silica.
<4> The polishing liquid according to any one of <1> to <3>, wherein the content of component A is preferably 0.1% by mass or more, more preferably 1% by mass or more, and further preferably 3% by mass or more. Composition.
<5> The content of component A is preferably 20% by mass or less, more preferably 15% by mass or less, and further preferably 10% by mass or less, and the polishing composition according to any one of <1> to <4> .
<6> The polishing liquid according to any one of <1> to <5>, wherein the content of component A is preferably 0.1% by mass or more and 20% by mass or less, more preferably 1% by mass or more and 15% by mass or less. Composition.
<7> The content of component B is preferably 0.05% by mass or more, more preferably 0.1% by mass or more, further preferably 0.15% by mass or more, further preferably 0.3% by mass or more, 0 The polishing composition according to any one of <1> to <6>, further preferably 5% by mass or more.
<8> The content of Component B is preferably 10% by mass or less, more preferably 7% by mass or less, further preferably 5% by mass or less, further preferably 4% by mass or less, and further preferably 2% by mass or less. Polishing liquid composition in any one of <1> to <7>.
<9> The content of Component B is preferably 0.05% by mass or more and 10% by mass or less, more preferably 0.1% by mass or more and 7% by mass or less, and further preferably 0.15% by mass or more and 5% by mass or less. The polishing composition according to any one of <1> to <8>, more preferably 0.3% by mass to 4% by mass, and further preferably 0.5% by mass to 2% by mass.
<10> The polishing according to any one of <1> to <9>, wherein the mass ratio A / B between component A and component B is preferably 1 or more, more preferably 1.5 or more, and still more preferably 2 or more. Liquid composition.
<11> The polishing liquid composition according to any one of <1> to <10>, wherein the mass ratio A / B between component A and component B is preferably 100 or less, more preferably 90 or less, and still more preferably 80 or less. object.
<12> The mass ratio A / B between the component A and the component B is preferably 1 or more and 100 or less, more preferably 1.5 or more and 90 or less, and further preferably 2 or more and 80 or less, from <1> to <11> The polishing liquid composition in any one.
<13> When component C is added to an aqueous medium at pH 2 in the same amount as the phosphate content in the polishing composition, the proportion of component C present in the form of a salt is aqueous at pH 2. <1> to <12>, preferably 10% by mass or more, more preferably 20% by mass or more, and still more preferably 30% by mass or more, based on the total amount of component C added to the medium. Polishing liquid composition.
<14> Component C is dipotassium hydrogen phosphate, disodium hydrogen phosphate, diammonium hydrogen phosphate, potassium dihydrogen phosphate, sodium dihydrogen phosphate, ammonium dihydrogen phosphate, sodium dihydrogen pyrophosphate, pyrroline Polishing liquid composition in any one of <1> to <13> which is 1 type, or 2 or more types chosen from sodium acid, sodium hexametaphosphate, and sodium tripolyphosphate.
<15> The content of component C is preferably 0.3% by mass or more, more preferably 0.5% by mass or more, further preferably 0.8% by mass or more, and further preferably 1% by mass or more. <1> To <14>.
<16> The content of component C is preferably 10% by mass or less, more preferably 7% by mass or less, further preferably 5% by mass or less, and further preferably 3% by mass or less, any one of <1> to <15> A polishing liquid composition according to claim 1.
<17> The content of component C is preferably 0.3% by mass or more and 10% by mass or less, more preferably 0.5% by mass or more and 7% by mass or less, and further preferably 1% by mass or more and 5% by mass or less. The polishing composition according to any one of <1> to <16>, wherein the content is more preferably no less than 3% by mass and no more than 3% by mass.
<18> The polishing composition according to any one of <1> to <16>, wherein the content of component C is 0.8% by mass or more and 3% by mass or less.
<19> The mass ratio A / C between the component A and the component C is preferably 0.5 or more, more preferably 1 or more, and further preferably 1.5 or more, according to any one of <1> to <18>. Polishing liquid composition.
<20> The polishing liquid composition according to any one of <1> to <19>, wherein the mass ratio A / C between component A and component C is preferably 26 or less, more preferably 20 or less, and still more preferably 16 or less. object.
<21> The mass ratio A / C between the component A and the component C is preferably 0.5 or more and 26 or less, more preferably 1 or more and 20 or less, and further preferably 1.5 or more and 16 or less, <1> to <20 > The polishing liquid composition in any one of>.
<22> The mass ratio B / C between the component B and the component C is preferably 0.01 or more, more preferably 0.03 or more, still more preferably 0.05 or more, still more preferably 0.07 or more, and 1 or more, The polishing liquid composition in any one of <1> to <21>.
<23> The mass ratio B / C between the component B and the component C is preferably 50 or less, more preferably 30 or less, still more preferably 20 or less, still more preferably 10 or less, still more preferably 3 or less, and even more preferably 2 or less. The polishing composition according to any one of <1> to <22>, preferably 1 or less, more preferably 0.4 or less.
<24> The mass ratio B / C between the component B and the component C is preferably 0.01 or more and 50 or less, more preferably 0.01 or more and 30 or less, further preferably 0.03 or more and 20 or less, and 0.05 or more. 10 or less is more preferable, 0.05 or more and 3 or less is more preferable, 0.05 or more and 1 or less is more preferable, and 0.07 or more and 0.4 or less is further preferable, <1> to <23> Polishing liquid composition.
<25> The polishing composition according to any one of <1> to <24>, which does not contain a phosphate ester compound.
<26> The polishing composition according to any one of <1> to <25>, comprising Component A, Component B, Component C, and water.
<27> The polishing composition according to any one of <1> to <26>, wherein the pH is preferably 0.9 or more, more preferably 1 or more, and still more preferably 1.5 or more.
<28> The polishing composition according to any one of <1> to <27>, wherein the pH is preferably 6 or less, more preferably 5 or less, and even more preferably 4.5 or less.
<29> The pH is preferably 0.9 or more and 6 or less, more preferably 1 or more and 5 or less, further preferably 1 or more and 4.5 or less, and further preferably 1.5 or more and 4.5 or less, from <1> to <28> The polishing liquid composition according to any one of the above.
<30> The polishing composition according to any one of <1> to <29>, wherein the glass hard disk substrate is an aluminoborosilicate glass substrate.
<31> A method for producing a glass hard disk substrate, comprising a step of polishing a glass substrate to be polished using the polishing composition according to any one of <1> to <30>.
<32> A method for polishing a glass substrate, comprising polishing a glass substrate to be polished using the polishing composition according to any one of <1> to <30>.
 以下、実施例により本開示をさらに詳細に説明するが、これらは例示的なものであって、本開示はこれら実施例に制限されるものではない。 Hereinafter, the present disclosure will be described in more detail by way of examples. However, these examples are illustrative, and the present disclosure is not limited to these examples.
1.研磨液組成物の調製(実施例1~10及び比較例1~7)
 成分A(コロイダルシリカ、平均粒径20nm)、成分B(スルファミン酸)又は非成分B(表1に示す酸)、成分C(表1に示すリン酸塩)及びイオン交換水を、表1に記載の割合(質量%)で配合して撹拌することにより、実施例1~10及び比較例1~7の研磨液組成物を調製した。
1. Preparation of polishing liquid compositions (Examples 1 to 10 and Comparative Examples 1 to 7)
Table 1 shows component A (colloidal silica, average particle size 20 nm), component B (sulfamic acid) or non-component B (acid shown in Table 1), component C (phosphate shown in Table 1) and ion-exchanged water. The polishing liquid compositions of Examples 1 to 10 and Comparative Examples 1 to 7 were prepared by blending at the stated ratio (mass%) and stirring.
 表1に示す研磨液組成物の調製において、成分B、非成分B、成分Cには以下のものを使用した。
スルファミン酸[サンケミカル社製](成分B)
硫酸[和光純薬工業社製](非成分B)
リン酸[和光純薬工業社製](非成分B)
クエン酸[磐田化学工業社製](非成分B)
酒石酸[和光純薬工業社製](非成分B)
酸性ピロリン酸ソーダ[ピロリン酸二水素二ナトリウム、燐化学工業社製](成分C)
リン酸二水素カリウム[和光純薬工業社製](成分C)
硫酸ナトリウム[和光純薬工業社製](非成分C)
 ここで、酸性ピロリン酸ソーダ(成分C)は、研磨液組成物中の酸性ピロリン酸ソーダの含有量(表1に記載の含有量)と同じ量でpH2の水性媒体中に添加された場合、塩の形態で存在する酸性ピロリン酸ソーダの割合が、pH2の水性媒体中に添加された酸性ピロリン酸ソーダの全量に対し96質量%である。
 リン酸二水素カリウム(成分C)は、研磨液組成物中のリン酸二水素カリウムの含有量(1.2質量%)と同じ量でpH2の水性媒体中に添加された場合、塩の形態で存在するリン酸二水素カリウムの割合が、pHの水性媒体中に添加されたリン酸二水素カリウムの全量に対し、43質量%である。
In the preparation of the polishing composition shown in Table 1, the following were used for Component B, Non-Component B, and Component C.
Sulfamic acid [manufactured by Sun Chemical Co., Ltd.] (component B)
Sulfuric acid [Wako Pure Chemical Industries, Ltd.] (non-component B)
Phosphoric acid [Wako Pure Chemical Industries, Ltd.] (non-component B)
Citric acid [Made by Iwata Chemical Industry] (non-component B)
Tartaric acid [Wako Pure Chemical Industries, Ltd.] (non-component B)
Acid soda pyrophosphate [disodium dihydrogen pyrophosphate, manufactured by Phosphor Chemical Industries Ltd.] (component C)
Potassium dihydrogen phosphate [Wako Pure Chemical Industries, Ltd.] (Component C)
Sodium sulfate [Wako Pure Chemical Industries, Ltd.] (non-component C)
Here, when sodium acid pyrophosphate (component C) is added to an aqueous medium having a pH of 2 in the same amount as the content of sodium acid pyrophosphate in the polishing composition (content described in Table 1), The proportion of sodium acid pyrophosphate present in the form of a salt is 96% by weight, based on the total amount of sodium acid pyrophosphate added in the aqueous medium at pH 2.
When potassium dihydrogen phosphate (component C) is added to an aqueous medium at pH 2 in the same amount as the content (1.2% by mass) of potassium dihydrogen phosphate in the polishing composition, it is in the form of a salt. The proportion of potassium dihydrogen phosphate present in is 43% by weight, based on the total amount of potassium dihydrogen phosphate added to the aqueous medium at pH.
2.各種パラメータの測定方法
[シリカ粒子(成分A)の平均粒径の測定方法]
 コロイダルシリカ粒子を含む試料を、透過型電子顕微鏡「JEM-2000FX」(80kV、1~5万倍、日本電子社製)により当該製造業者が添付した説明書に従って試料を観察し、TEM(Transmission Electron Microscope)像を写真撮影した。この写真をスキャナで画像データとしてパソコンに取り込み、解析ソフト「WinROOF ver.3.6」(販売元:三谷商事)を用いて、個々のシリカ粒子の円相当径を計測し、粒子径を求めた。このようにして、1000個のシリカ粒子の粒子径を求めた後、これらの平均値を算出し、この平均値を平均粒径とした。
2. Measuring method of various parameters [Measuring method of average particle diameter of silica particles (component A)]
A sample containing colloidal silica particles was observed with a transmission electron microscope “JEM-2000FX” (80 kV, 1 to 50,000 times, manufactured by JEOL Ltd.) according to the instructions attached by the manufacturer, and TEM (Transmission Electron) was observed. Microscope) images were taken. This photograph was taken into a personal computer as image data by a scanner, and the equivalent diameter of each silica particle was measured using analysis software “WinROOF ver. 3.6” (distributor: Mitani Corp.) to obtain the particle diameter. . Thus, after calculating | requiring the particle diameter of 1000 silica particles, these average values were computed and this average value was made into the average particle diameter.
[研磨液組成物のpHの測定方法]
 研磨液組成物のpHは、pHメータ(東亜ディーケーケー社製)を用いて25℃にて測定し、電極を研磨液組成物へ浸漬して2分後の数値を採用した。測定結果を表1に示した。
[Method for measuring pH of polishing composition]
The pH of the polishing composition was measured at 25 ° C. using a pH meter (manufactured by Toa DKK Co.), and the value after 2 minutes after the electrode was immersed in the polishing composition was adopted. The measurement results are shown in Table 1.
3.被研磨基板の調製
 セリア砥粒を含有する研磨液組成物であらかじめ粗研磨したアルミノホウ珪酸ガラス基板を被研磨基板として用意した。基板中に含まれる構成元素は、Siの含有量は24質量%、Alの含有量は8質量%、Bの含有量は1質量%であった。構成元素は、ESCA(Electron Spectroscopy for Chemical Analysis)法を用い以下の測定条件で測定した。
<ESCA測定条件>
(1)試料作製
 アルミノホウ珪酸ガラス基板を1cm×1cmに切断し、カーボン製両面テープ上に乗せ固定した。表面のゴミ等を除くためにArスパッタを加速電圧2kVで6分間かけ、ESCA測定を実施した。
(2)測定条件
機器:アルバックファイ製 PHI Quantera SXM
X線源:単色化AlKα線、1486.6eV、25W、15kV
ビーム径:100μm
X線入射角:45°
測定範囲:1000×1000(μm2
Pass energy:280.0(survey)、112.0eV(narrow)
Step size:1.00(survey)、0.200eV(narrow)
測定元素:C,O,Mg,Al,Si,Ca,Sr,Sn,Ba
帯電補正:Neutralizer及びAr+照射
3. Preparation of substrate to be polished An aluminoborosilicate glass substrate roughly polished in advance with a polishing composition containing ceria abrasive grains was prepared as a substrate to be polished. Constituent elements contained in the substrate had a Si content of 24% by mass, an Al content of 8% by mass, and a B content of 1% by mass. The constituent elements were measured using the ESCA (Electron Spectroscopy for Chemical Analysis) method under the following measurement conditions.
<ESCA measurement conditions>
(1) Sample preparation An aluminoborosilicate glass substrate was cut into 1 cm x 1 cm and placed on a carbon double-sided tape and fixed. In order to remove dust on the surface, Ar sputtering was performed for 6 minutes at an acceleration voltage of 2 kV, and ESCA measurement was performed.
(2) Measurement condition equipment: PHI Quantera SXM manufactured by ULVAC-PHI
X-ray source: Monochromatic AlKα ray, 1486.6 eV, 25 W, 15 kV
Beam diameter: 100 μm
X-ray incident angle: 45 °
Measurement range: 1000 × 1000 (μm 2 )
Pass energy: 280.0 (survey), 112.0 eV (narrow)
Step size: 1.00 (survey), 0.200 eV (narrow)
Measurement elements: C, O, Mg, Al, Si, Ca, Sr, Sn, Ba
Charging correction: Neutralizer and Ar + irradiation
4.研磨方法
 実施例1~10及び比較例1~7の研磨液組成物を用いて、以下に示す研磨条件にて上記被研磨基板を研磨した。
4). Polishing Method The substrate to be polished was polished using the polishing liquid compositions of Examples 1 to 10 and Comparative Examples 1 to 7 under the following polishing conditions.
[研磨条件]
研磨試験機:スピードファム社製「両面9B研磨機」
研磨パッド:スエードタイプ(厚さ0.9mm、平均開孔径30μm、材質:発泡ウレタン)
研磨液組成物供給量:100mL/分(被研磨基板1cm2あたりの供給速度:約0.3mL/分)
下定盤回転数:24rpm
研磨荷重:4.9kPa
キャリア:アラミド製、厚さ0.5mm
研磨時間:30分
被研磨基板:アルミノボロシリケートガラス基板(外径95mm、内径25mm、厚さ0.65mm)
投入基板枚数:5枚
[Polishing conditions]
Polishing tester: "Fast double-sided 9B polishing machine" manufactured by Speedfam
Polishing pad: Suede type (thickness 0.9mm, average pore diameter 30μm, material: urethane foam)
Polishing liquid composition supply amount: 100 mL / min (supply rate per 1 cm 2 of polishing substrate: about 0.3 mL / min)
Lower platen rotation speed: 24rpm
Polishing load: 4.9 kPa
Carrier: Aramid, thickness 0.5mm
Polishing time: 30 minutes Substrate to be polished: Aluminoborosilicate glass substrate (outer diameter 95 mm, inner diameter 25 mm, thickness 0.65 mm)
Number of input substrates: 5
5.評価
[研磨速度の評価]
 研磨前後の各基板1枚当たりの重さを計り(Sartorius社製、「BP-210S」)を用いて測定し、各基板の質量変化から質量減少量を求めた。全5枚の平均の質量減少量を研磨時間で割った値を研磨速度とし、下記式により算出した。実施例1~10、比較例1、3~7の研磨速度の測定結果を、下記表1に、比較例2を100とした相対値として示す。
質量減少量(g)={研磨前の質量(g)- 研磨後の質量(g)}
研磨速度(mg/min)=質量減少量(mg)/ 研磨時間(min)
5). Evaluation [Evaluation of polishing rate]
The weight per substrate before and after polishing was measured (measured by Sartorius, “BP-210S”), and the amount of mass loss was determined from the change in mass of each substrate. A value obtained by dividing the average mass reduction amount of all five sheets by the polishing time was defined as a polishing rate, and was calculated by the following formula. The measurement results of the polishing rates of Examples 1 to 10 and Comparative Examples 1 and 3 to 7 are shown in Table 1 below as relative values with Comparative Example 2 taken as 100.
Weight loss (g) = {mass before polishing (g) −mass after polishing (g)}
Polishing rate (mg / min) = mass reduction amount (mg) / polishing time (min)
[表面粗さの評価]
 研磨後の基板を、20ppmのKOH水溶液からなるpH12のアルカリ洗浄剤組成物(温度:25℃)の入った槽内に1時間浸漬する。浸漬後の基板を、イオン交換水で60秒間すすぎを行った後、基板表面を完全に乾燥させる。そして、各々の基板の両面を、下記測定条件にて、AFM(Bruker製 Dimension Icon)を用いて表面粗さを測定し、平均値を算出した。表面粗さ(AFM-Ra)の結果を、下記表1に、比較例2を100とした相対値として示す。
<AFMの測定条件>
Mode: Tapping mode
Area: 1×1μm
Scan rate: 1.0Hz
Cantilever: OTESPA-R3
Line: 256×256
[Evaluation of surface roughness]
The polished substrate is immersed for 1 hour in a bath containing a pH 12 alkaline detergent composition (temperature: 25 ° C.) made of 20 ppm KOH aqueous solution. The substrate after the immersion is rinsed with ion exchange water for 60 seconds, and then the substrate surface is completely dried. Then, the surface roughness of both surfaces of each substrate was measured using AFM (Bruker Dimension Icon) under the following measurement conditions, and the average value was calculated. The results of surface roughness (AFM-Ra) are shown in Table 1 as relative values with Comparative Example 2 taken as 100.
<AFM measurement conditions>
Mode: Tapping mode
Area: 1 × 1μm
Scan rate: 1.0 Hz
Cantilever: OTESPA-R3
Line: 256 × 256
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
 上記表1に示すとおり、実施例1~10の研磨液組成物は、比較例1~7の研磨液組成物に比べて、研磨速度が維持されつつ、洗浄後の基板の表面粗さの悪化が抑制されていた。 As shown in Table 1 above, the polishing liquid compositions of Examples 1 to 10 were deteriorated in the surface roughness of the substrate after cleaning while maintaining the polishing rate as compared with the polishing liquid compositions of Comparative Examples 1 to 7. Was suppressed.
 本開示の研磨液組成物によれば、研磨速度を維持しつつ、洗浄後の基板表面の表面粗さの悪化を抑制できる。したがって、本開示の研磨液組成物は、様々なガラス基板の製造において有用であり、中でも、ハードディスク用ガラス基板の製造に有用である。 According to the polishing composition of the present disclosure, deterioration of the surface roughness of the substrate surface after cleaning can be suppressed while maintaining the polishing rate. Therefore, the polishing composition of the present disclosure is useful in the production of various glass substrates, and is particularly useful in the production of glass substrates for hard disks.

Claims (16)

  1.  砥粒、スルファミン酸、リン酸塩、及び水を含有する、ガラスハードディスク基板用研磨液組成物。 Polishing liquid composition for glass hard disk substrate containing abrasive grains, sulfamic acid, phosphate, and water.
  2.  pHが0.9以上6以下である、請求項1に記載の研磨液組成物。 The polishing composition according to claim 1, wherein the pH is 0.9 or more and 6 or less.
  3.  砥粒がシリカ粒子である、請求項1又は2に記載の研磨液組成物。 The polishing composition according to claim 1 or 2, wherein the abrasive grains are silica particles.
  4.  砥粒がコロイダルシリカである、請求項1又は2に記載の研磨液組成物。 The polishing composition according to claim 1 or 2, wherein the abrasive grains are colloidal silica.
  5.  研磨液組成物中のスルファミン酸の含有量は、0.05質量%以上10質量%以下である、請求項1から4のいずれかに記載の研磨液組成物。 The polishing composition according to any one of claims 1 to 4, wherein the content of sulfamic acid in the polishing composition is 0.05% by mass or more and 10% by mass or less.
  6.  研磨液組成物中のスルファミン酸の含有量は、0.15質量%以上5質量%以下である、請求項1から4のいずれかに記載の研磨液組成物。 The polishing composition according to any one of claims 1 to 4, wherein the content of sulfamic acid in the polishing composition is 0.15% by mass or more and 5% by mass or less.
  7.  研磨液組成物中のリン酸塩の含有量は、0.3質量%以上10質量%以下である、請求項1から6のいずれかに記載の研磨液組成物。 The polishing composition according to any one of claims 1 to 6, wherein the content of the phosphate in the polishing composition is 0.3% by mass or more and 10% by mass or less.
  8.  研磨液組成物中のリン酸塩の含有量は、0.8質量%以上3質量%以下である、請求項1から6のいずれかに記載の研磨液組成物。 The polishing composition according to any one of claims 1 to 6, wherein the content of the phosphate in the polishing composition is 0.8 mass% or more and 3 mass% or less.
  9.  リン酸塩が、リン酸水素二カリウム、リン酸水素二ナトリウム、リン酸水素二アンモニウム、リン酸二水素カリウム、リン酸二水素ナトリウム、リン酸二水素アンモニウム、ピロリン酸二水素ナトリウム、ピロリン酸ナトリウム、ヘキサメタリン酸ナトリウム、及びトリポリリン酸ナトリウムから選ばれる1種又は2種以上である、請求項1から8のいずれかに記載の研磨液組成物。 Phosphate is dipotassium hydrogen phosphate, disodium hydrogen phosphate, diammonium hydrogen phosphate, potassium dihydrogen phosphate, sodium dihydrogen phosphate, ammonium dihydrogen phosphate, sodium dihydrogen pyrophosphate, sodium pyrophosphate The polishing composition according to any one of claims 1 to 8, which is one or more selected from sodium hexametaphosphate and sodium tripolyphosphate.
  10.  研磨液組成物中のスルファミン酸とリン酸塩との質量比(スルファミン酸の含有量/リン酸塩の含有量)は、0.01以上50以下である、請求項1から9のいずれかに記載の研磨液組成物。 The mass ratio of sulfamic acid to phosphate (content of sulfamic acid / content of phosphate) in the polishing composition is from 0.01 to 50 in any one of claims 1 to 9. The polishing liquid composition as described.
  11.  研磨液組成物中のスルファミン酸とリン酸塩との質量比(スルファミン酸の含有量/リン酸塩の含有量)は、0.05以上1以下である、請求項1から9のいずれかに記載の研磨液組成物。 The mass ratio of sulfamic acid and phosphate (content of sulfamic acid / content of phosphate) in the polishing composition is 0.05 or more and 1 or less, according to any one of claims 1 to 9. The polishing liquid composition as described.
  12.  研磨液組成物中の砥粒とリン酸塩との質量比(砥粒の含有量/リン酸塩の含有量)は、0.5以上26以下である、請求項1から11のいずれかに記載の研磨液組成物。 The mass ratio between the abrasive grains and the phosphate in the polishing composition (abrasive grain content / phosphate content) is 0.5 to 26 in any one of claims 1 to 11. The polishing liquid composition as described.
  13.  前記リン酸塩は、研磨液組成物中の前記リン酸塩の含有量と同じ量でpH2の水性媒体中に添加された場合、塩の形態で存在するリン酸塩の割合が、pH2の水性媒体中に添加されたリン酸塩の全量に対し10質量%以上である、請求項1から12のいずれかに記載の研磨液組成物。 When the phosphate is added to a pH 2 aqueous medium in the same amount as the phosphate content in the polishing composition, the proportion of phosphate present in the form of a salt is pH 2 aqueous. The polishing composition according to any one of claims 1 to 12, which is 10% by mass or more based on the total amount of phosphate added to the medium.
  14.  ガラスハードディスク基板が、アルミノボロシリケートガラス基板である、請求項1から13のいずれかに記載の研磨液組成物。 The polishing composition according to any one of claims 1 to 13, wherein the glass hard disk substrate is an aluminoborosilicate glass substrate.
  15.  請求項1から14のいずれかに記載の研磨液組成物を用いて被研磨ガラス基板を研磨する工程を含む、ガラスハードディスク基板の製造方法。 A method for producing a glass hard disk substrate, comprising a step of polishing a glass substrate to be polished using the polishing composition according to any one of claims 1 to 14.
  16.  請求項1から14のいずれかに記載の研磨液組成物を用いて被研磨ガラス基板を研磨することを含む、ガラス基板の研磨方法。 A method for polishing a glass substrate, comprising polishing a glass substrate to be polished using the polishing composition according to any one of claims 1 to 14.
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JP2014141667A (en) * 2012-12-27 2014-08-07 Sanyo Chem Ind Ltd Polishing liquid for electronic material
JP2014203503A (en) * 2013-04-10 2014-10-27 株式会社オハラ Method for manufacturing hard disk substrate
JP2014217904A (en) * 2013-05-07 2014-11-20 コニカミノルタ株式会社 Method of manufacturing glass article

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JP2004027042A (en) * 2002-06-26 2004-01-29 Yuka Sangyo Kk Gelled product of fine particle dispersion and fine particle dispersion obtained from the same
JP2014141667A (en) * 2012-12-27 2014-08-07 Sanyo Chem Ind Ltd Polishing liquid for electronic material
JP2014203503A (en) * 2013-04-10 2014-10-27 株式会社オハラ Method for manufacturing hard disk substrate
JP2014217904A (en) * 2013-05-07 2014-11-20 コニカミノルタ株式会社 Method of manufacturing glass article

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111085901A (en) * 2019-12-23 2020-05-01 江西沃格光电股份有限公司 Glass panel polishing method and glass panel

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