WO2019206960A1 - Élément absorbeur et cellule photovoltaïque - Google Patents

Élément absorbeur et cellule photovoltaïque Download PDF

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Publication number
WO2019206960A1
WO2019206960A1 PCT/EP2019/060460 EP2019060460W WO2019206960A1 WO 2019206960 A1 WO2019206960 A1 WO 2019206960A1 EP 2019060460 W EP2019060460 W EP 2019060460W WO 2019206960 A1 WO2019206960 A1 WO 2019206960A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
absorber
absorber element
reflection layer
light
Prior art date
Application number
PCT/EP2019/060460
Other languages
German (de)
English (en)
Inventor
Volker Steenhoff
Original Assignee
Dlr-Institut Für Vernetzte Energiesysteme E. V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dlr-Institut Für Vernetzte Energiesysteme E. V. filed Critical Dlr-Institut Für Vernetzte Energiesysteme E. V.
Priority to EP19720519.8A priority Critical patent/EP3785305A1/fr
Publication of WO2019206960A1 publication Critical patent/WO2019206960A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01G—HORTICULTURE; CULTIVATION OF VEGETABLES, FLOWERS, RICE, FRUIT, VINES, HOPS OR SEAWEED; FORESTRY; WATERING
    • A01G9/00—Cultivation in receptacles, forcing-frames or greenhouses; Edging for beds, lawn or the like
    • A01G9/24—Devices or systems for heating, ventilating, regulating temperature, illuminating, or watering, in greenhouses, forcing-frames, or the like
    • A01G9/243—Collecting solar energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S10/00—PV power plants; Combinations of PV energy systems with other systems for the generation of electric power
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A40/00—Adaptation technologies in agriculture, forestry, livestock or agroalimentary production
    • Y02A40/10—Adaptation technologies in agriculture, forestry, livestock or agroalimentary production in agriculture
    • Y02A40/25—Greenhouse technology, e.g. cooling systems therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P60/00—Technologies relating to agriculture, livestock or agroalimentary industries
    • Y02P60/12—Technologies relating to agriculture, livestock or agroalimentary industries using renewable energies, e.g. solar water pumping

Definitions

  • the invention relates to an absorber element and a device based thereon
  • photovoltaic cell also called a solar cell
  • electrical energy can be obtained from the light incident on the cell.
  • solar cells have an absorber element in which free charge carriers can be generated by the supply of energy in the form of electromagnetic radiation.
  • Known photovoltaic cells aim to maximize the totality
  • German patent application DE 10 2013 217 653 A1 discloses a solar cell which has a front-side electrode and a rear-side electrode and a photoelectrically active absorber layer which is arranged between the front and rear side electrodes and contains at least 30% by mass of germanium.
  • the absorber layer has a thickness of less than 40 nm, wherein the solar cell has a front-side reflection layer and a rear-side reflection layer, wherein the absorber layer is arranged between the front and back reflection layer and the optical path length between the front and back reflection layer is less than half of the band gap at one of the band gap of the absorber layer corresponding wavelength.
  • the solar cell has the advantage that the thickness of the absorber layer is reduced compared to previously known solar cells, wherein the absorption capacity is only slightly reduced.
  • greenhouses that have large glass surfaces through which the light necessary for plant growth falls on the cultivated plants or the biomass are required for biomass production and cultivation.
  • For plant growth is a photosynthesis process required, with the help of light energy high-energy biomolecules are produced from low-energy substances.
  • Plants, including, for example, algae normally require light of specific wavelengths in the blue and red wavelengths. Green and infrared light is only weakly absorbed by the plants and therefore mostly transmitted or reflected.
  • the object of the invention is to provide an absorber element and a photovoltaic cell, the / the light of those wavelengths that can be used by plants, transmits, while it / the remaining wavelengths of light as broadband absorbed, the efficiency over prior art devices increases and the manufacturing cost is minimized.
  • An absorber element has an absorber layer, wherein the absorber element has at least one front-side reflection layer and at least one rear-side reflection layer, wherein the absorber layer is arranged between the front-side reflection layer and the back-reflection layer, wherein the optical path length between the front-side reflection layer and
  • Rear side reflective layer is less than 400 nm at least for perpendicular to the cell incident light.
  • front side refers to the side of the absorber element facing the light source, for example the sun, while the term “back side” here and in the
  • the optical path length is calculated from the product of the refractive index with the geometric path, i. the geometric thickness of the layer stack, calculated.
  • the absorber element according to the invention is characterized in that at least one of the reflection layers has a spectrally selective reflectivity, wherein light which is essentially usable by plants for photosynthesis is
  • Substantially transmissive and light of other wavelengths is substantially reflective.
  • Reflective layers located thin absorber absorbs at one time
  • Such an absorber element may include, for example, germanium. Unless the
  • Absorber Mrs has a thickness which is dimensioned so that the optical
  • Path length between the front surface reflection layer and the back surface reflection layer is less than 400 nm at least for perpendicular to the cell incident light forms a broadband optical resonance between the front and
  • Rear side reflective layer whereby the absorption in the absorber layer is substantially increased. Does at least one of the reflection layers have one spectrally selective reflectivity, whereby from plants to photosynthesis in the
  • Substantially usable light is substantially transmissive and light of other wavelengths is substantially reflective, the incident light can be used both for the generation of electrical energy and for plant growth. At wavelengths with reduced reflectivity then disappear the resonance effects almost completely, so that this light passes through the absorber layer only simply and is substantially transmitted. At wavelengths of high reflectivity, however, the absorber layer is traversed many times, resulting in a high absorption. At the same time, this leads to suitable light conditions for the growth of photosynthetically active species as well as to a large one
  • At least one of the reflection layers has a spectrally selective reflectivity with a change in reflectivity of at least 50% for a limited wavelength range.
  • the wavelength of the light which can be used for photosynthesis is about 400 nm to 500 nm in the blue region and about 630-730 nm in the red region.
  • the wavelengths between about 500 nm and about 630 nm fall in the green and yellow areas and are of
  • Plants generally not or only weakly used. Even light in the UV range and above 630 nm contribute little to photosynthesis.
  • Wavelengths can therefore be used for the production of electrical energy.
  • the absorber layer As materials or material combinations for the absorber layer, it has proven advantageous to absorb at least about 5%, preferably at least about 10%, absorption at an optical thickness of 400 nm or less in the spectral range reflected by the back reflection layer on the other hand of a maximum of about 30%, preferably a maximum of about 20% guarantee even with a single pass.
  • the optical thickness is calculated from the product of the refractive index with the geometric thickness.
  • the optical path length given by the absorber layer must be between
  • the optical path length between the front-side reflection layer and the back-side reflection layer, at least for light incident perpendicular to the cell is less than 200 nm.
  • the optical path length between the front-side reflection layer and the back-reflection layer is at least less than 100 nm, at least for light incident perpendicular to the cell.
  • the spectral selectivity of the absorber element can be supported by the absorber layer itself additionally having a spectrally selective absorption coefficient.
  • the absorber layer has a spectrally selective absorption, wherein light usable by plants for photosynthesis is substantially transmissive and light of other wavelengths is substantially absorbable.
  • Absorber and front reflection layer has a reflectivity of at least 10%.
  • the absorber layer comprises amorphous germanium and / or an alloy based thereon.
  • the absorber layer comprises transition metal dichalcogenides (TMDCs) and / or other metal-based semiconductor materials, such as MoS 2 , WS 2 , MoSe 2 , WSe 2 , SnS x and MoO x .
  • TMDCs transition metal dichalcogenides
  • the absorber layer comprises transition metal dichalcogenides (TMDCs) and / or other metal-based semiconductor materials, such as MoS 2 , WS 2 , MoSe 2 , WSe 2 , SnS x and MoO x .
  • organic semiconductor materials or one or more organic dyes especially those with spectrally selective absorption coefficient.
  • Reflective layers on a metal / oxide / metal multi-layer stack In this case, a layer thickness of the inner oxide layer of 250 nm to 550 nm has proven to be advantageous.
  • oxide is here and below as a placeholder for in the visible
  • Wavelength range essentially transparent materials with a high band gap of 2 eV or higher to understand, as is in the art
  • oxides e.g., zinc oxide, silica, indium-tin oxide, alumina, titania, magnesia
  • nitrides e.g.
  • Silicon nitride Silicon nitride
  • oxynitrides e.g., silicon oxynitride
  • carbides e.g., silicon carbide
  • At least one of the reflective layers comprises a metal / oxide / metal / oxide multiple layer stack.
  • Reflective layers comprises a zinc oxide / silver / zinc oxide / silver multi-layer stack, wherein the silver layer thicknesses are between 5 and 25 nm.
  • the layer thickness of at least one of the oxide layers is between about 250 nm and 550 nm.
  • the described advantageous embodiments cause an optimization of the energy yield.
  • An inventive photovoltaic cell is characterized in that the photovoltaic cell has an inventive absorber element, wherein the
  • Solar cell furthermore charge-carrier-selective electrodes and at least one
  • Front side electrode and at least one rear side electrode Between the front side electrode and the rear side electrode, the absorber layer is arranged, which is configured photoelectrically active.
  • a further advantageous embodiment of the photovoltaic cell is characterized in that at least one of the layers of the absorber layer, the front-side reflection layer and / or the rear-side reflection layer
  • a structuring of the different layers can be carried out by means of laser cuts in order to achieve an electrical series connection of individual cell strips of the photovoltaic cell and thus to generate a higher module voltage instead of a high current.
  • Fig. 1 shows the general structure of an absorber element according to the invention.
  • Fig. 2 shows an embodiment of an absorber element according to the invention with a germanium absorber layer.
  • Fig. 3 shows an embodiment of an absorber element according to the invention with spectrally selective transparency with n-layer as part of
  • Fig. 1 shows the general structure of an absorber element according to the invention 1. Light falls almost perpendicular to the absorber element 1, as indicated by the three broad arrows.
  • the absorber element 1 has a front side reflection layer 5 and a backside reflection layer 6.
  • An absorber layer 4 is disposed between the front-side reflection layer 5 and the back-reflection layer 6.
  • the absorber layer 4 has a thickness which is dimensioned such that the optical path length between the front-side reflection layer 5 and the back-reflection layer 6 is at least 400 nm for incident light perpendicular to the cell.
  • the absorber layer 4 thus forms a resonator 8.
  • the absorber layer 4 may consist of a single layer or a layer stack of different layers. At least one of the reflection layers (front-side reflection layer 5 and / or rear-side reflection layer 6) has a spectrally selective reflectivity, wherein the reflectivity is at least 50% for a limited
  • Wavelength range is changed.
  • FIG. 2 shows an exemplary embodiment of an absorber element 1 according to the invention with a germanium absorber layer 4.
  • the front-side reflection layer 5 is formed as a metal-grid structure, in particular of silver, in which the metal forms the surface of the absorber element 1 only to a small extent, for example 10%, covered, while the front side of this metal grid, another layer of a TCO (Transparent Conductive Oxide), in particular from one of
  • the front-side reflection layer 5 may be formed as a known Bragg reflector with the aim of achieving wavelength-dependent transmission and reflection properties thereof.
  • a Bragg reflector consists of alternating, thin For example, layers of a dielectric of different refractive indices. At each boundary layer, part of the electromagnetic wave of the light is reflected according to Fresnel's formulas. If the
  • Wavelength is close to four times the optical path length of the layers, then the reflected rays interfere constructively and there is a high quality reflector.
  • the absorber layer 4 is formed as an amorphous or microcrystalline germanium layer.
  • the absorber layer 4 consists of a layer stack with a light incident side first layer 4a of an amorphous, n-doped
  • Silicon alloy with a thickness of about 10 nm.
  • the first layer 4a is followed by a second layer 4b of an amorphous intrinsic germanium alloy with a layer thickness of about 3 to 30 nm.
  • a last, third layer 4c has a
  • Microcrystalline p-doped silicon alloy with a layer thickness of about 10 nm. This layer stack forms the resonator 8 with a refractive index of about 3.5 to 4.5.
  • the absorber element 4 is terminated by a surface-formed spectrally selective rear-side reflection layer 6.
  • the backside reflection layer may also be formed as a Bragg reflector with the aim of achieving wavelength-selective transmission and reflection properties of the same.
  • the n-layer is formed as part of the interior of the resonator 8, with its refractive index similar to that of the adjacent second absorber layer 4b.
  • FIG. 3 shows an absorber element 1 with spectrally selective transparency with n-layer as part of the front-side reflection layer 5.
  • the structure corresponds to that of the embodiment shown above with the difference that the n-layer is not the first layer 4a of the absorber layer 4 and thus of the resonator 8, but second layer 5b of the front-side reflection layer 5, with its refractive index substantially different from that of the second layer 4b of the absorber layer.
  • the resonator 8 consists here only of the second layer 4b of an amorphous intrinsic germanium alloy with a layer thickness of about 3 to 30 nm and a last, third layer 4c, which has a microcrystalline p-doped silicon alloy with a layer thickness of about 10 nm.
  • This layer stack forms the resonator 8 with a refractive index of about 3.5 to 4.5.
  • Front reflection layer 5 consists in this embodiment of a first layer 5a of a TCO (Transparent Conductive Oxide), in particular of an ITO. Further, the front side reflection layer 5 includes a second layer 5b of an amorphous n-type silicon alloy having a thickness of about 10 nm. The refractive indices of about 2 of the front side reflection layer 5 and about 3.5 to 4.5 of the resonator are this change is not affected.
  • TCO Transparent Conductive Oxide

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Sustainable Energy (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Sustainable Development (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Environmental Sciences (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un élément absorbeur et une cellule photovoltaïque à base de cet élément. Un élément absorbeur selon l'invention présente une couche d'absorption photoélectriquement active, l'élément absorbeur présentant au moins une couche de réflexion en face avant et au moins une couche de réflexion en face arrière. La couche d'absorption est disposée entre la couche de réflexion en face avant et la couche de réflexion en face arrière, la longueur du trajet optique entre la couche de réflexion en face avant et la couche de réflexion en face arrière étant inférieure à 400 nm au moins pour la lumière incidente à angle droit sur la cellule. L'élément absorbeur selon l'invention se caractérise en ce qu'au moins une des couches de réflexion présente une réflectivité à sélectivité spectrale, la lumière utilisable essentiellement par les plantes pour la photosynthèse pouvant être essentiellement transmise et la lumière d'autres longueurs d'onde pouvant être essentiellement réfléchie.
PCT/EP2019/060460 2018-04-26 2019-04-24 Élément absorbeur et cellule photovoltaïque WO2019206960A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP19720519.8A EP3785305A1 (fr) 2018-04-26 2019-04-24 Élément absorbeur et cellule photovoltaïque

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018206515.2 2018-04-26
DE102018206515.2A DE102018206515A1 (de) 2018-04-26 2018-04-26 Absorberelement und photovoltaische Zelle

Publications (1)

Publication Number Publication Date
WO2019206960A1 true WO2019206960A1 (fr) 2019-10-31

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EP (1) EP3785305A1 (fr)
DE (1) DE102018206515A1 (fr)
WO (1) WO2019206960A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL282890A (en) * 2021-05-03 2022-12-01 Doral Energy Tech Ventures Uses in agriculture of a photovoltaic solar couple system with selective light absorption and transmission.

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013217653A1 (de) 2013-09-04 2015-03-05 Ewe-Forschungszentrum Für Energietechnologie E. V. Photovoltaische Solarzelle
US20180047862A1 (en) * 2012-01-26 2018-02-15 Fundació Institut De Ciències Fotòniques Photoconversion device with enhanced photon absorption

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005101525A2 (fr) * 2004-04-14 2005-10-27 Greenfuel Technologies Corporation Structures et appareils a cellules photovoltaiques
DE102008008726A1 (de) * 2008-02-12 2009-09-24 Schott Solar Gmbh Photovoltaisches Modul und Verfahren zu dessen Herstellung

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180047862A1 (en) * 2012-01-26 2018-02-15 Fundació Institut De Ciències Fotòniques Photoconversion device with enhanced photon absorption
DE102013217653A1 (de) 2013-09-04 2015-03-05 Ewe-Forschungszentrum Für Energietechnologie E. V. Photovoltaische Solarzelle

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
CHRISTOPHER J. M. EMMOTT ET AL: "Organic photovoltaic greenhouses: a unique application for semi-transparent PV?", ENERGY & ENVIRONMENTAL SCIENCE, vol. 8, no. 4, 4 February 2015 (2015-02-04), Cambridge, pages 1317 - 1328, XP055604531, ISSN: 1754-5692, DOI: 10.1039/C4EE03132F *
FAN YANG ET AL: "Visibly transparent organic photovoltaic with improved transparency and absorption based on tandem photonic crystal for greenhouse application", APPLIED OPTICS, vol. 54, no. 34, 30 November 2015 (2015-11-30), WASHINGTON, DC; US, pages 10232 - 10239, XP055604522, ISSN: 0003-6935, DOI: 10.1364/AO.54.010232 *
N OSTERTHUN ET AL: "Spectrally Selective Solar Cells for Simultaneous Use of Photosynthesis and Photovoltaics", PROC. OF THE 35TH EU-PVSEC, 24 September 2018 (2018-09-24) - 27 September 2018 (2018-09-27), pages 180 - 183, XP055604015, ISBN: 978-3-936338-50-8, DOI: 10.4229/35THEUPVSEC20182018-1CV.4.52 *
VOLKER STEENHOFF: "Development of Amorphous Germanium Nanoabsorber Solar Cells", DISSERTATION, 31 May 2016 (2016-05-31), pages 1 - 78, XP055603993, Retrieved from the Internet <URL:http://oops.uni-oldenburg.de/2872/1/stedev16.pdf> [retrieved on 20190710] *
YUELIN PENG ET AL: "ITO-Free Transparent Organic Solar Cell with Distributed Bragg Reflector for Solar Harvesting Windows", ENERGIES, vol. 10, no. 5, 17 May 2017 (2017-05-17), pages 707 - 1, XP055546363, DOI: 10.3390/en10050707 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL282890A (en) * 2021-05-03 2022-12-01 Doral Energy Tech Ventures Uses in agriculture of a photovoltaic solar couple system with selective light absorption and transmission.
IL282890B1 (en) * 2021-05-03 2024-06-01 Doral Energy Tech Ventures A suspended solar cell system used for growing agropot and voltaic plants

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DE102018206515A1 (de) 2019-10-31

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