WO2019206138A1

WO2019206138A1 - Evaporation rate control device, method and apparatus for evaporation source, and storage medium

Info

Publication number: WO2019206138A1
Application number: PCT/CN2019/083886
Authority: WO
Inventors: 王晓尉
Original assignee: 北京铂阳顶荣光伏科技有限公司
Priority date: 2018-04-24
Filing date: 2019-04-23
Publication date: 2019-10-31
Also published as: CN108342712A

Abstract

An evaporation rate control device for an evaporation source, the device comprising a controller (1) and an online acquisition instrument (2) connected to one another, wherein the online acquisition instrument (2) is used for acquiring a coating parameter of a substrate and sending the coating parameter to the controller (1); and the controller (1) is used for generating a heating power adjustment amount according to the received coating parameter and controlling the evaporation rate of an evaporation source on the basis of the amount of heating power adjustment. Further disclosed are an evaporation rate control method and apparatus for an evaporation source, and a computer-readable storage medium.

Description

Evaporation rate control device, method, device and storage medium for evaporation source

The present application claims the priority of the Chinese patent application entitled "Evaporation rate control device, method, device and storage medium for evaporation source" on April 24, 2018, application number 201810374480.6, the entire contents of which are incorporated by reference. The citations are incorporated in the disclosure.

Technical field

Embodiments of the present disclosure relate to engineering control technologies, and in particular, to an evaporation rate control device, method, device, and storage medium for an evaporation source.

Background technique

CIGS is a shorthand for solar thin film batteries, mainly composed of Cu (copper), In (indium), Ga (gallium), and Se (selenium). The deposition of copper indium gallium selenide functional film on a glass substrate is an approved technology for CIGS production. Among them, co-evaporation coating CIGS is a relatively mature method. The ratio and thickness of the four elements of CU, IN, GA and SE in CIGS determine the quality of the film, while the element ratio and thickness are directly related to the evaporation rate of each element. Therefore, it is necessary to control the evaporation rate of each evaporation source.

Since the evaporation rate of each evaporation source is affected by various factors, such as the amount of film material of the evaporation source, the partial pressure in the vacuum chamber after evaporation of the film material, the resistance of the evaporation source, the current, and the installation position of the evaporation source, etc. The evaporation of the film material changes the heat of the film material, and the evaporation rate of the film material is also affected. Therefore, it is difficult to effectively control the evaporation rate of each evaporation source.

Summary of the invention

Embodiments of the present disclosure provide an evaporation rate control apparatus, method, apparatus, and storage medium of an evaporation source to control an evaporation rate of an evaporation source.

In a first aspect, an embodiment of the present disclosure provides an evaporation rate control device for an evaporation source, including: a connected controller and an online collection device;

The online collecting instrument is configured to collect coating parameters of the substrate, and send the coating parameters to the controller;

The controller is configured to generate a heating power adjustment amount according to the received coating parameter, and control an evaporation rate of the evaporation source based on the heating power adjustment amount.

Optionally, the evaporation rate control device of the evaporation source further includes: a film thickness controller and an acquisition component;

The collecting component is configured to collect an oscillation frequency caused by plating a first target coating element;

The film thickness controller is respectively connected to the controller and the collecting component for acquiring a variation amount of an oscillation frequency from the collecting component, and obtaining a thickness of the first target coating element according to the variation amount, and Transmitting the thickness of the first target coating element to the controller;

The controller is configured to generate the heating power adjustment amount according to the coating parameter and a thickness of the first target coating element.

Optionally, the acquisition component includes a probe, a probe chamber for at least partially accommodating the probe, and an oscillator coupled to the probe;

The probe is configured to collect a partial pressure of the first target coating element;

The oscillator is configured to oscillate under the partial pressure of the first target coating element.

Optionally, the number of the collection components is at least two;

The distance between the probe chamber of the acquisition component and the evaporation source is within a set distance.

Optionally, the collecting component further includes a first isolation component;

The first isolation component is mounted between the CIGS chamber and the probe chamber;

The CIGS chamber is for accommodating the evaporation source;

The first isolation component is configured to switch a communication state between the probe chamber and the CIGS chamber.

Optionally, the evaporation rate control device of the evaporation source further includes: a sampling component and an offline collection device;

The sampling component is configured to plate a second target coating element;

The offline collecting device is respectively connected to the sampling component and the controller, and is configured to collect coating sampling parameters on the sampling component, and send the sampling parameters to the controller;

The controller is configured to generate the heating power adjustment amount according to the received coating parameter and the coating sampling parameter; or to generate the heating power according to the received coating parameter, the thickness of the first target coating element, and the coating sampling parameter Adjustment amount.

Optionally, the sampling component comprises: a sample piece, a sample holder for loading the sample piece, and a second isolation component;

The side of the sample rack loading the sample is attached to the second isolation component;

The second isolation component is adapted to be disposed on an outer wall of the CIGS chamber for switching a contact state of the sample with the CIGS chamber;

When the second isolation component is opened, the swatch is in contact with the CIGS chamber for plating the second target coating element.

Optionally, the second isolation component is coupled to the controller for switching the contact state according to a control instruction of the controller.

Optionally, the sampling component further includes a vacuum component;

The vacuum member is respectively connected to the sample holder and the sealing ring of the CIGS chamber for vacuuming a space between the sample holder and the second isolation assembly and the CIGS chamber, and holding the sample The space between the frame and the second isolation component is the same as the vacuum of the CIGS chamber.

Optionally, the online collection instrument is an online optical film thickness collection instrument or an online X-ray fluorescence spectrum analysis acquisition instrument;

The offline acquisition instrument is an offline optical film thickness collection instrument or a flux sample detection offline X-ray fluorescence spectrum analysis acquisition instrument.

In a second aspect, an embodiment of the present disclosure further provides an evaporation rate control method for an evaporation source, including:

Obtaining coating parameters;

Generating a heating power adjustment amount according to the coating parameter;

The evaporation rate of the evaporation source is controlled based on the heating power adjustment amount.

In a third aspect, an embodiment of the present disclosure further provides an evaporation rate control device for an evaporation source, including:

One or more processors;

Memory for storing one or more programs,

The one or more programs are executed by the one or more processors such that the one or more processors implement an evaporation rate control method of any of the evaporation sources.

In a fourth aspect, an embodiment of the present disclosure further provides a computer readable storage medium having stored thereon a computer program that, when executed by a processor, implements an evaporation rate control method of any of the evaporation sources.

In the embodiment of the present disclosure, the controller, the online collection instrument, and the evaporation source form a closed loop. The online acquisition instrument can collect the coating parameters of the substrate, and in combination with the above closed-loop structure, the heater can be controlled according to the coating parameters to achieve precise control of the evaporation rate.

DRAWINGS

1 is a schematic structural view of an evaporation rate control device of an evaporation source according to Embodiment 1 of the present disclosure;

2a is a left side view of a CIGS chamber provided by Embodiment 2 of the present disclosure;

2b is a front elevational view of a CIGS chamber provided by Embodiment 2 of the present disclosure;

2c is a schematic structural diagram of an acquisition component provided by Embodiment 2 of the present disclosure;

3a is a left side view of a CIGS chamber provided in Embodiment 3 of the present disclosure;

Figure 3b is a front elevational view of a CIGS chamber provided in Example 3 of the present disclosure;

3c is a schematic structural diagram of a sampling component according to Embodiment 3 of the present disclosure;

4 is a flowchart of a method for controlling an evaporation rate of an evaporation source according to Embodiment 4 of the present disclosure;

5 is a flow chart of a method for controlling an evaporation rate of an evaporation source according to Embodiment 5 of the present disclosure;

6 is a flow chart of a method for controlling an evaporation rate of an evaporation source according to Embodiment 6 of the present disclosure;

7 is a flow chart of a method for controlling an evaporation rate of an evaporation source according to Embodiment 7 of the present disclosure;

8 is a schematic structural view of an evaporation rate control device of an evaporation source according to Embodiment 8 of the present disclosure.

Among them, 1, controller; 2, online collector; 3, CIGS chamber; 4, film transfer line; 51, Se evaporation source; 52, Cu evaporation source; 53, In evaporation source; 54, Ga evaporation source; , heater of Se evaporation source; 62, heater of Cu evaporation source; 63, heater of In evaporation source; 64, heater of Ga evaporation source; 7, film thickness controller; 81, probe; 82, probe cavity Room 83; oscillator; 84, first acquisition component; 85, second acquisition component; 86, third acquisition component; 87, fourth acquisition component; 88, first isolation component; 9, sampling component; Rack; 92, sample; 93, second isolation component; 94, sealing flange; 10, offline collector.

detailed description

The present disclosure will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is understood that the specific embodiments described herein are merely illustrative of the disclosure and are not intended to be limiting. In addition, it should be noted that, for the convenience of description, only some but not all of the structures related to the present disclosure are shown in the drawings.

Embodiment 1

1 is a schematic structural view of an evaporation rate control device of an evaporation source according to Embodiment 1 of the present disclosure. As shown in FIG. 1, the device includes a connected controller 1 and an online collector 2.

The online collecting instrument 2 is configured to collect coating parameters of the substrate, and send the coating parameters to the controller 1. Among them, the coating parameters include film thickness and/or element ratio.

Optionally, the online collector 2 is disposed on the ejection line 4 of the substrate connected to the CIGS chamber 3 for collecting the coating parameters of the substrate on the ejection line 4. Among them, the CIGS chamber 3 is used to accommodate an evaporation source.

After the substrate is coated in the CIGS chamber 3, the substrate is transported to the in-line collector 2 by the ejection line 4 connected to the CIGS chamber 3. The on-line collector 2 provided on the ejection line 4 collects the film thickness and/or element ratio on the substrate. The film thickness refers to the average thickness of the film formed on the substrate, and the element ratio is the content ratio of each element in the film layer.

Optionally, the online collector 2 can be an online optical film thickness collecting instrument or an inline X Ray Fluorescence (Inline XRF) collecting instrument.

The optical film thickness collecting instrument mainly uses the spectral transmittance and reflectance of the film. The optical thickness detecting method mainly includes a photometric method, a waveguide method, a light cutting method, and the like. The optical film thickness detection method has non-contact type, high sensitivity, high precision and two-dimensional measurement characteristics of optical images, so that the optical method has the advantages of accuracy, rapidity, and losslessness.

X-ray for elemental analysis is a new analytical technique widely used in metallurgy, geology, non-ferrous, building materials and other fields. The intensity of the characteristic X-rays of each element is related to the energy and intensity of the excitation source, as well as the content of such elements. Based on this, the thickness and element ratio of the coating can be detected by the Inline XRF. X-ray analysis has the following advantages: 1. High separation speed. It takes 2-5 minutes to measure all the elements to be tested on the substrate. 2. The X-ray fluorescence spectrum has nothing to do with the chemical bonding state of the coating, and it has nothing to do with the state of solid, powder, liquid, crystalline, amorphous and the like. 3. Non-destructive analysis. It does not cause a change in the chemical state during the test and there is no sample scattering phenomenon. 4, the sample preparation is simple, solid, powder, liquid samples can be analyzed.

The online collector 2 is communicatively coupled to the controller 1. Optionally, the online collector 2 is communicatively coupled to the controller 1 in a wired or wireless manner. The online collector 2 transmits the collected coating parameters to the controller 1 through a communication link with the controller 1.

The controller 1 is also respectively connected to heaters of a plurality of evaporation sources for generating a heating power adjustment amount according to the received coating parameters, and controlling the evaporation rate of the evaporation source based on the heating power adjustment amount.

Wherein, the heating power adjustment amount is matched with each evaporation source. The controller 1 transmits a heating power adjustment amount matched with the evaporation source to the heater of the corresponding evaporation source; the evaporation source includes at least one of the Cu evaporation source 52, the In evaporation source 53, the Ga evaporation source 54, and the Se evaporation source 51. .

Similarly, the controller 1 is communicatively coupled to the heaters of the respective evaporation sources. Optionally, the controller 1 is communicatively coupled to the heaters of the respective evaporation sources in a wired or wireless manner. The controller 1 outputs a heating power adjustment amount corresponding to the evaporation source to the heaters of the respective evaporation sources through a communication link with the heaters of the respective evaporation sources.

Taking the evaporation source including the Cu evaporation source 52, the In evaporation source 53, the Ga evaporation source 54, and the Se evaporation source 51 as an example, outputting the heating power adjustment amount corresponding to the evaporation source to the heaters of the evaporation sources specifically includes: Cu evaporation source 52 The heating power adjustment amount is sent to the heater 62 of the Cu evaporation source 52, the heating power adjustment amount of the In evaporation source 53 is sent to the heater 63 of the In evaporation source 53, and the heating power adjustment amount of the Ga evaporation source 54 is sent to the Ga The heater 64 of the evaporation source 54 transmits the heating power adjustment amount of the Se evaporation source 51 to the heater 61 of the Se evaporation source 51.

The heater 62 of the Cu evaporation source 52, the heater 63 of the In evaporation source 53, the heater 64 of the Ga evaporation source 54, and the heater 61 of the Se evaporation source 51 are used for evaporation according to the Cu evaporation source 52, the In evaporation source 53, and Ga. The heating power adjustment amount of the source 54 and the Se evaporation source 51 heats the Cu evaporation source 52, the In evaporation source 53, the Ga evaporation source 54, and the Se evaporation source 51. The evaporation source is disposed at the bottom of the CIGS chamber 3. Under the action of the heater, the corresponding gas is evaporated into the CIGS chamber 3, and the substrate is coated on the substrate in the CIGS chamber 3.

It should be noted that in the embodiment of the present disclosure, the evaporation source adopts a separate control method, that is, one heating power adjustment amount controls one heater to heat the corresponding heater. If there are N evaporation sources, it is necessary to obtain N heating power adjustment amounts and control the N evaporation sources separately.

In some embodiments, the apparatus further includes a labeling component coupled to the controller 1 for labeling the substrate under control of the control commands. For example, if the controller 1 determines that the coating parameters meet the requirements, the labeling unit is controlled to mark the substrate as a qualified label; and the controller 1 determines that the coating parameters do not meet the requirements, and then controls the labeling unit to mark the substrate as a failed label.

In this embodiment, the controller 1, the online collection device 2, and the evaporation source form a closed loop. The online collecting instrument 2 can collect the coating parameters of the substrate, and in combination with the above closed-loop structure, the heater can be controlled according to the coating parameters to achieve precise control of the evaporation rate.

Embodiment 2

This embodiment is further optimized on the basis of the above embodiments. 2a is a left side view of a CIGS chamber provided by Embodiment 2 of the present disclosure, and FIG. 2b is a front view of a CIGS chamber provided by Embodiment 2 of the present disclosure. In conjunction with Figures 2a and 2b, the apparatus further includes a film thickness controller 7 and an acquisition component.

The collecting component is configured to collect an oscillation frequency caused by plating the first target coating element; the film thickness controller is respectively connected with the controller and the collecting component, and is used for acquiring the variation of the oscillation frequency from the collecting component, and obtaining the first according to the variation The thickness of the target coating element and the thickness of the first target coating element is sent to the controller.

Optionally, the acquisition component, as shown in Figure 2c, includes a probe 81, a probe chamber 82 for at least partially housing the probe 81, and an oscillator 83 coupled to the probe 81. Alternatively, the acquisition component may be a Quartz Crystal Microbalance (QCM) or a long film optical film thickness tester.

The quartz crystal microbalance has the following advantages: 1. High sensitivity and the absolute value of the mass of the plated element can be determined. 2. The substrate material can be selected within a relatively wide range. 3. Track the change in quality during the coating process.

The long film optical film thickness tester can monitor the thickness of the film grown in the line in real time through the optical window; the film thickness can also be measured on the line. The test results of the long film optical film thickness tester are relatively accurate.

The probe chamber 82 is mounted on the outer wall of the CIGS chamber 3 and is in communication with the CIGS chamber 3.

In some embodiments, to ensure the containment of the CIGS chamber 3 when the acquisition component is removed from the outer wall of the CIGS chamber 3, the apparatus further includes a first isolation assembly 88. The first isolation component 88 can be a blind window, a valve, or the like. The first isolation assembly 88 is mounted between the CIGS chamber 3 and the probe chamber 82. The first isolation assembly 88 is used to switch the communication state between the probe chamber 82 and the CIGS chamber 3. For example, when the first isolation assembly 88 is open, the probe chamber 82 is in communication with the CIGS chamber 3, and gas within the CIGS chamber 3 is coated on the probe 81 within the probe chamber 82. When the first isolation assembly 88 is closed, the probe chamber 82 is blocked from the CIGS chamber 3, and the gas in the CIGS chamber 3 cannot be coated with the probe 81 in the probe chamber 82.

In other embodiments, to more accurately capture the thickness of the first target coating element, the distance between the probe chamber 82 of the acquisition component and the evaporation source is within a set distance. For example, at least two collecting members are mounted on the outer wall of the CIGS chamber 3, specifically, the probe chambers 82 of the at least two collecting members are mounted on the left and right sides of the evaporation source of the first target coating element. Moreover, the distance between the probe chamber 82 of the at least two acquisition components and the evaporation source of the first target coating element is within a set distance to sufficiently capture the first target coating element. Optionally, the first target coating element is dispersive, and the entire target CIGS chamber 3 is filled with the first target coating element, and the collecting part is located directly above the first target coating element, and is located in the upper area of the first target coating element. Just fine.

Alternatively, the first target coating element is a diffuse element, for example, the first target coating element is a Se element. 2a and 2b, there are four acquisition components, namely a first acquisition component 84, a second acquisition component 85, a third acquisition component 86, and a fourth acquisition component 87. The first collecting member 84 and the second collecting member 85 are mounted on the left outer wall of the CIGS chamber 3, and the third collecting member 8866 and the fourth collecting member 87 are mounted on the right outer wall of the CIGS chamber 3. The Se evaporation source 51 is distributed at the bottom of the CIGS chamber 3, for example, the bottom center line, and 9 Se evaporation sources 51 are shown in Figs. 2a and 2b. The first collecting part 84 and the second collecting part 85 are distributed back and forth, and the first collecting part 84 (or the second collecting part 85) and the line connecting the projection of the Se evaporation source 51 on the side are perpendicular to the vertical center axis of the CIGS chamber 3. The angle of the insertion is less than the preset angle, and the preset angle may be 30 degrees, 40 degrees, 45 degrees, and the like. Similarly, the angle between the connection of the third acquisition component 86 (or the fourth acquisition component 87) and the Se evaporation source 51 on the side and the vertical center axis of the CIGS chamber 3 is less than a predetermined angle.

The probe 81 is used to collect the partial pressure of the first target coating element. The partial pressure of the first target coating element means that all the gases other than the first target coating element are excluded from the mixed gas in the CIGS chamber, while keeping the chamber volume and temperature constant, and the pressure of the gas at this time.

Since the first target coating element is mainly plated on the probe 81, it mainly collects the partial pressure of the first target coating element.

The oscillator 83 is used to oscillate under the partial pressure of the first target coating element. Among them, the oscillator 83 is a quartz crystal, and the probe 81 is an electrode of a quartz crystal. Due to the partial pressure of the first target coating element collected by the probe 81, the oscillator 83 oscillates based on the piezoelectric effect.

In general, the thicker the first target plating element plated on the probe 81, the higher the quality of plating, and the higher the partial pressure, the lower the oscillation frequency of the oscillator 83. Based on this characteristic of the oscillator 83, the film thickness controller 7 can obtain the amount of change in the oscillation frequency from the oscillator 83 of the acquisition unit, and obtain the thickness of the first target plating element plated on the probe 81 in accordance with the amount of change in the oscillation frequency.

In the embodiment of the present disclosure, a film thickness controller 7 can be connected to at least one of the acquisition components. When the collecting member is two or more, the film thickness controller 7 obtains the thickness of the first target coating element on the probe 81 of each collecting member, and then averages the thickness of the first target coating element to obtain the first The average thickness of a target coating element.

The film thickness controller 7 is connected to the controller 1 for transmitting the thickness of the first target coating element to the controller 1; the controller 1 is configured to generate a heating power adjustment amount according to the received coating parameter and the thickness of the first target coating element The evaporation rate of the evaporation source is controlled based on the heating power adjustment amount.

The controller 1 is communicatively coupled to the film thickness controller 7. Alternatively, the controller 1 is communicatively coupled to the film thickness controller 7 in a wired or wireless manner. The film thickness controller 7 transmits the thickness of the first target plating element to the controller 1 through a communication link with the controller 1.

In this embodiment, the probe chamber 82 is in communication with the CIGS chamber 3, so that the film thickness controller 7 can acquire the amount of change in the oscillation frequency of the oscillator 83, and obtain the thickness of the first target coating element plated on the probe 81. Thereby, the thickness of the plated first target coating element is collected; the controller 1 is connected to the film thickness controller 7, so that the controller 1 can according to the thickness of the first target coating element collected by the film thickness controller 7 and The coating parameters collected by the online collector 2 are combined to control the heater to control the evaporation rate more accurately.

Embodiment 3

Based on the above embodiment, the apparatus further includes a sampling component 9 and an offline acquisition instrument 10. 3a is a left side view of a CIGS chamber provided in Embodiment 3 of the present disclosure, and FIG. 3b is a front view of a CIGS chamber provided in Embodiment 3 of the present disclosure. 3a and 3b, the apparatus includes a controller 1, an online collector 2, a film thickness controller 7, an acquisition component, a sampling component 9, and an offline acquisition instrument 10. For details of the descriptions of the controller 1, the online collection device 2, the film thickness controller 7, and the acquisition components, refer to the above embodiments, and details are not described herein again.

Above the respective metal evaporation sources on the outer wall of the CIGS chamber 3, at least one sampling member 9 is provided for plating the second target coating element. The metal evaporation source includes at least one of a Cu evaporation source 52, an In evaporation source 53, and a Ga evaporation source 54.

The metal evaporation source including the Cu evaporation source 52, the In evaporation source 53, and the Ga evaporation source 54 will be described as an example. The Cu evaporation source 52, the In evaporation source 53, and the Ga evaporation source 54 are disposed at the bottom of the CIGS chamber 3. Specifically, the Cu evaporation source 52, the In evaporation source 53, and the Ga evaporation source 54 are disposed at the bottom side of the CIGS chamber 3. . In Fig. 3a and Fig. 3b, a total of nine Cu evaporation source 52, In evaporation source 53, and Ga evaporation source 54 are provided, and a sampling member 9 is disposed above each evaporation source.

The sampling component 9 is interconnected with the CIGS chamber 3 for plating a corresponding second target coating element. The second target coating element is not dispersive, and the sampling member 9 is generally only plated with the corresponding elements below.

After the coating member 9 completes the coating, it is removed from the outer wall of the CIGS chamber 3 and connected to the offline collection device 10. The offline collector 10 is used to collect the coating sampling parameters on the sampling unit 9 and send them to the controller 1 connected thereto. For convenience of description and differentiation, the parameters collected by the offline acquisition instrument 10 are referred to as film sampling parameters, and the coating sampling parameters include the film sampling thickness and/or the element sampling ratio; the film sampling thickness refers to the average film formed on the sampling member 9. Thickness, element sampling ratio, that is, the content ratio of Cu element, In element, Ga element, Se element.

Optionally, the offline acquisition instrument 10 is an off-line optical film thickness collection instrument or a flux sample X-ray fluorescence spectrometry (FLUX offline X Ray Fluorescence, FLUX offline XRF) acquisition instrument.

The offline optical film thickness collecting instrument has the same detection principle as the online optical film thickness collecting instrument, except that the offline optical film thickness collecting instrument can be located not on the output transmission line 4 but separated from the outgoing transmission line. The detection principle of the FLUX offline XRF collector: When a single-energy X-ray of energy E passes through a material of a certain density, its photon intensity I decays exponentially with the distance through the material. Based on this, the coating sampling parameters can be detected by detecting the photon intensity. This method of calculating the flux of X-ray transport in materials has high accuracy and reliability.

The controller 1 is configured to generate a heating power adjustment amount according to the received coating parameter, the thickness of the first target coating element, and the coating sampling parameter, and send the heating to the corresponding evaporation source, and adjust the amount to the evaporation source based on the heating power The evaporation rate is controlled.

In some embodiments, as shown in FIG. 3c, the sampling component 9 includes a sample holder 91, a swatch 92, and a second isolation assembly 93.

The sample rack 91 is used to load the sample piece 92, and the sample holder 91 holds the sample piece 92 by fasteners. The sample holder 91 has one side loaded with the sample piece 92 attached to the second spacer assembly 93, and the second isolation unit 93 is adapted to be disposed on the outer wall of the CIGS chamber 3 for switching the contact state of the sample piece 92 with the CIGS chamber 3. The second isolation component 93 may be a plate valve, a vacuum valve, a shut-off valve, or the like. Optionally, the tightness of the CIGS chamber 3 is ensured, and the second isolation member 93 and the outer wall of the CIGS chamber 3 are sealed by a sealing flange 94. In some embodiments, the second isolation assembly 93 is a reverse mounted two plate valve that provides better sealing and prevents leakage of the CIGS chamber.

When the second isolation assembly 93 is opened, the swatch 92 is in contact with the CIGS chamber 3 for plating a second target coating element. Accordingly, when the second isolation member 93 is closed, the sample 92 is isolated from the CIGS chamber 3, and the coating is finished. At this time, the fastener of the sample rack 91 can be opened, the sample 92 therein can be taken out and connected with the offline collecting instrument 10 to detect the coating sampling parameter; when the second isolation component 93 is closed, the new sample 92 can also be loaded to continue to acquire Coating sampling parameters.

Optionally, the second isolation component 93 is coupled to the controller 1 (not shown). The controller 1 periodically transmits an open control command and a close control command to the second isolation component 93. The second isolation component 93 is configured to switch the contact state according to a control instruction of the controller. Specifically, the opening operation is performed according to the opening control command, and the closing operation is performed according to the closing control instruction.

In some embodiments, the apparatus further includes a vacuum component (not shown). The vacuum members are respectively connected to the sample holder 91 and the sealing ring of the CIGS chamber 3 for evacuating the space between the sample holder 91 and the second isolation member 93 and the CIGS chamber, and holding the sample holder 91 and the second isolation assembly 93. The space between the space and the CIGS chamber 3 is the same.

In this embodiment, at least one sampling component 9 is disposed above the metal evaporation source on the outer wall of the CIGS chamber 3, and the offline collection device 10 is respectively connected to the sampling component 9 and the controller 1 for collecting the sampling component 9 The coating sampling parameter is sent to the controller 1 to generate a heating power adjustment amount matched with the evaporation source according to the received coating parameter, the thickness of the first target coating element, and the coating sampling parameter, and sent to the The corresponding evaporation source heater controls the evaporation rate more precisely.

Further, by providing at least one sampling component 9 above each metal evaporation source, the structural design is ingenious, simple, and practical, and data detection of a single metal evaporation source is realized, which increases the number of evaporation sources to increase the beat.

In other embodiments, the apparatus includes a controller 1, an online collector 2, a sampling component 9, and an offline acquisition instrument 10. The related descriptions of the controller 1, the online collection device 2, the sampling component 9, and the offline collection device 10 are described in detail in the above embodiments, and are not described herein again.

Different from the above embodiment, the controller 1 is configured to generate a heating power adjustment amount according to the coating parameter sent by the online acquisition 2 and the coating sampling parameter sent by the offline collecting instrument 10, to adjust the evaporation rate of the evaporation source based on the heating power adjustment amount. Take control.

In this embodiment, through the on-line collecting instrument 2, the sampling component 9 and the offline collecting instrument 10, the coating parameters and the coating sampling parameters are comprehensively collected to achieve precise control of the evaporation rate of the evaporation source.

Embodiment 4

4 is a flow chart of a method for controlling an evaporation rate of an evaporation source according to Embodiment 4 of the present disclosure. The present embodiment is applicable to a case where an evaporation rate of an evaporation source of a CIGS chamber 3 is controlled, and the method may be performed by an evaporation source. Executed by an evaporation rate control device, which may be composed of hardware and or software, and may be integrated in the controller 1 disclosed in any of the above embodiments.

As shown in FIG. 4, the method provided in this embodiment specifically includes the following steps:

S410, obtaining coating parameters.

The bottom of the CIGS chamber 3 is provided with a Cu evaporation source 52, an In evaporation source 53, a Ga evaporation source 54, and a Se evaporation source 51. Each evaporation source corresponds to a heater, and under the action of the heater, the evaporation source is directed to the CIGS chamber 3. The corresponding gas is evaporated and the substrate in the CIGS chamber 3 is coated. After the substrate is completely coated, the substrate is transported to the in-line collector 2 by the ejection line 4 connected to the CIGS chamber 3. The online collecting instrument 2 detects the substrate to obtain the coating parameters of the substrate. Optionally, the coating parameters include: a film thickness of the substrate and/or an element ratio. Among them, the film transfer line 4 will continuously transport one substrate. The online collector 2 can detect the substrate in the first cycle and send the coating parameters to the controller 1.

The controller 1 can acquire the film thickness and/or element ratio of the substrate from the online acquisition device 2 in a first cycle. The film thickness refers to the average thickness of the film formed on the substrate, and the element ratio is the content ratio of each element in the film layer.

S420, generating a heating power adjustment amount according to the coating parameter.

The coating parameters have a corresponding relationship with the heating power adjustment amount. The heating power adjustment amount can be obtained according to the coating parameters.

In some embodiments, the controller 1 pre-stores online benchmark parameters. The first deviation value of the coating parameter relative to the online reference parameter is determined according to the coating parameter and the online reference parameter, and the online reference parameter comprises: an on-line film reference thickness of the substrate and/or an online element reference ratio.

The difference between the film thickness and the on-line film reference thickness is obtained to obtain a line thickness difference. The elemental test ratio and the online elemental reference ratio are compared to obtain an online ratio difference. The first offset value includes an online thickness difference and/or an online ratio difference.

Based on the first deviation value, a heating power adjustment amount matching the Cu evaporation source 52, the In evaporation source 53, the Ga evaporation source 54, and the Se evaporation source 51 is obtained.

S430. Control an evaporation rate of the evaporation source based on the heating power adjustment amount.

The controller 1 is pre-stored with a control model, which may be a control model of multiple inputs and multiple outputs, or may be a control algorithm such as PID or neural network. The principle of the control model is that the input of the control model is the deviation value, and the output is the heating power adjustment amount matched with each evaporation source. When the deviation value is far from the corresponding threshold, it indicates that the less the evaporation rate meets the requirement, the larger the heating power adjustment amount is, and the evaporation rate is adjusted to a larger extent; when the deviation value tends to the corresponding threshold, the evaporation rate is more and more The more the requirements are met, the heating power adjustment amount tends to zero, thereby maintaining the evaporation rate of the evaporation source.

In this embodiment, the input of the control model is a first deviation value. When the first deviation value is greater than the first threshold, the control model obtains a heating power adjustment amount matched with each evaporation source after being calculated, and outputs the same to the corresponding evaporation source. Heater. The heater of the evaporation source adjusts the heating power according to the heating power adjustment amount, thereby adjusting the evaporation rate of the evaporation source. The controller 1 continues to acquire new coating parameters from the online collector 2 in a first cycle, and determines a first deviation value of the new coating parameters with respect to the reference parameter. When the first deviation value is less than or equal to the first threshold, the evaporation source is indicated. The evaporation rate meets the requirements and the control of the evaporation rate can be stopped. Alternatively, for convenience of comparison, the first deviation value is an absolute value and the first threshold value is a positive number.

In some embodiments, the normal value is set in advance. If the first deviation value is greater than the normal value, the working state of the CIGS production line may be considered to be insufficient or the film material amount is insufficient, thereby adjusting the working state of the CIGS production line or adding the film material in time.

In this embodiment, the coating parameter is obtained from the online collecting instrument; the heating power adjustment amount is generated according to the coating parameter; and the evaporation rate of the evaporation source is controlled based on the heating power adjustment amount, thereby obtaining the heating power adjustment amount according to the coating parameter. Since the evaporation rate can directly affect the coating quality, the coating parameter is used as a reference for adjusting the heating power, and the evaporation rate of the evaporation source can be effectively adjusted.

Embodiment 5

This embodiment further optimizes the foregoing embodiment. FIG. 5 is a flowchart of a method for controlling an evaporation rate of an evaporation source according to Embodiment 5 of the present disclosure. As shown in FIG. 5, the method includes the following steps:

S510, obtaining coating parameters. Continue to execute S530.

S510 is the same as S410 in the foregoing embodiment, and details are not described herein again.

S520. Obtain a thickness of the first target coating element. Continue to execute S530.

S530. Generate a heating power adjustment amount according to the coating parameter and the thickness of the first target coating element. Continue to execute S540.

S540. Control an evaporation rate of the evaporation source based on the heating power adjustment amount.

The collecting component can collect the partial pressure of the first target coating element plated on the probe from the CIGS chamber in a second cycle, and oscillate under the partial pressure of the first target coating element. The film thickness controller 7 obtains the thickness of the first target plating element plated on the probe 81 based on the amount of change in the oscillation frequency of the collected oscillator 83, and transmits it to the controller 1. The controller 1 acquires the thickness of the first target plating element from the film thickness controller 7 in the second cycle. The second period may be the same as the first period or different from the first period.

When the second period is the same as the first period, the thickness and coating parameters of the first target coating element can be simultaneously acquired, and subsequent operations are performed according to the obtained parameters. When the second period is different from the first period, the following two cases are included:

In one case, the second period is in a multiple relationship with the first period. For example, the second period is 6 minutes, and the first period is 3 minutes. When the thickness and coating parameters of the first target coating element are simultaneously acquired, for example, every 6 Minutes, follow-up actions based on the parameters obtained. In another case, the second period is not in a multiple relationship with the first period, and the data collected in the longer period and the data collected in the shorter period closest to the acquisition time are selected. For example, the second period is 7 minutes, the first period is 6 minutes, the thickness of the first target coating element is obtained at 3:00, and the coating parameters are collected at 3:02 and 2:56, respectively, 3:02 and 3:00 The interval time is shorter, and the subsequent operation is performed according to the thickness of the first target coating element obtained at 3:00 and the coating parameter obtained at 3:02.

It is worth noting that S510 and S520 can be executed synchronously or not simultaneously.

Next, a first deviation value of the coating parameter relative to the reference parameter is determined according to the coating parameter and the online reference parameter, and the online reference parameter comprises: an on-line film reference thickness of the substrate and/or an online element reference ratio. And determining a second deviation value of the thickness of the first target plating element from the reference thickness according to the thickness of the first target plating element and the reference thickness of the first target plating element.

The heating power adjustment amount of each evaporation source is obtained from the first deviation value and the second deviation value, respectively. The heating power adjustment amounts are respectively output to the heaters corresponding to the evaporation sources to control the evaporation rates of the respective evaporation sources.

In this embodiment, when the first deviation value is greater than the first threshold or the second deviation value is greater than the second threshold, the input of the control model is the first deviation value and the second deviation value, and the control model is obtained after the operation and the evaporation source is obtained. The matching heating power adjustment amount is output to the heater of the corresponding evaporation source. The heater of the evaporation source adjusts the heating power according to the heating power adjustment amount, thereby adjusting the evaporation rate of the evaporation source. The controller 1 continues to acquire new coating parameters from the online collector 2 in a first cycle, and acquires the thickness of the first target coating element from the film thickness controller 7 in a second cycle, and determines a new first deviation value and a new one. The second deviation value, when the first deviation value is less than or equal to the first threshold and the second deviation value is less than or equal to the second threshold, indicating that the evaporation rate of the evaporation source satisfies the requirement, and the control operation of the evaporation rate may be stopped. Alternatively, for convenience of comparison, the second deviation value is an absolute value and the second threshold value is a positive number.

In this embodiment, the thickness of the first target coating element reflects the actual evaporation rate of the evaporation source corresponding to the first target coating element. The thicker the first target coating element, the greater the actual evaporation rate of the corresponding evaporation source. In this embodiment, according to the element thickness of the actual evaporation rate of the reaction evaporation source and the coating parameters, the heating power adjustment amount of each evaporation source is comprehensively obtained, and the evaporation rate of each evaporation source can be more precisely controlled.

Embodiment 6

This embodiment further optimizes the foregoing embodiment. FIG. 6 is a flowchart of a method for controlling an evaporation rate of an evaporation source according to Embodiment 6 of the present disclosure. As shown in FIG. 6, the method includes the following steps:

S610, obtaining coating parameters. Continue to execute S630.

S610 is the same as S410 in the foregoing embodiment, and details are not described herein again.

S620, obtaining coating sampling parameters. Continue to execute S630.

Optionally, the coating sampling parameters include: a film sampling thickness of the sample 92 and/or an element sampling ratio.

S630, generating a heating power adjustment amount according to the coating parameters and the coating sampling parameters. Continue to execute S640.

S640, controlling an evaporation rate of the evaporation source based on the heating power adjustment amount. The sampling section 9 is for sampling in the CIGS chamber 3 in a third cycle, on which a film layer corresponding to the evaporation source is plated. The offline acquisition device 10 detects the sampling component 9 in a third cycle, acquires the coating sampling parameters plated by the sampling component 9, and sends it to the controller 1. The controller 1 acquires the coating sampling parameters in a third cycle. The third period may be the same as the first period or different from the first period.

When the third period is the same as the first period, the coating parameters and the coating sampling parameters can be acquired at the same time, and the subsequent operations are performed according to the obtained parameters. When the third period is different from the first period, the following two cases are included:

In one case, the third period is in a multiple relationship with the first period, and when the coating parameters and the coating sampling parameters are simultaneously acquired, the subsequent operations are performed according to the obtained parameters. In another case, the third period is not in a multiple relationship with the first period, and the data collected in the longer period and the data collected in the shorter period closest to the acquisition time are selected and subjected to subsequent processing.

In some embodiments, the controller 1 pre-stores an offline reference parameter, and obtains a third deviation value of the coating sampling parameter from the offline reference parameter according to the coating sampling parameter and the offline reference parameter, and the offline reference parameter includes the offline of the sampling component 9. Membrane baseline thickness and/or offline elemental reference ratio.

The difference between the film sample thickness and the offline film layer reference thickness is obtained to obtain an off-line thickness difference. The difference between the element sampling ratio and the offline element reference ratio is obtained, and the offline ratio difference is obtained. The third offset value includes an offline thickness difference and/or an offline ratio difference.

Next, based on the third deviation value and the first deviation value, the heating power adjustment amounts of the respective evaporation sources are obtained. Then, the heating power adjustment amounts are respectively output to the heaters corresponding to the evaporation sources to control the evaporation rates of the respective evaporation sources.

In this embodiment, when the first deviation value is greater than the first threshold or the third deviation value is greater than the third threshold, the input of the control model is the first deviation value and the third deviation value, and the control model is obtained after calculation and each evaporation source The matching heating power adjustment amount is output to the heater of the corresponding evaporation source. The heater of the evaporation source adjusts the heating power according to the heating power adjustment amount, thereby adjusting the evaporation rate of the evaporation source. The controller 1 continues to acquire new coating parameters from the online collector 2 in a first cycle, and acquires coating sampling parameters from the offline collecting instrument 10 in a third cycle, and determines a new first deviation value and a new third deviation value, When the first deviation value is less than or equal to the first threshold and the third deviation value is less than or equal to the third threshold, it is stated that the evaporation rate of the evaporation source satisfies the requirement, and the control operation of the evaporation rate may be stopped. Alternatively, for convenience of comparison, the third offset value is an absolute value and the third threshold value is a positive number.

In this embodiment, by taking the coating sampling parameters from the offline collecting instrument 10 in the third cycle, and coating the sampling parameters and the coating parameters to control the evaporation rate of each evaporation source, the evaporation rate is controlled more accurately.

Example 7

This embodiment further optimizes the above embodiment. 7 is a flowchart of a method for controlling an evaporation rate of an evaporation source according to Embodiment 7 of the present disclosure. As shown in FIG. 7, the method includes the following steps:

S710, obtaining coating parameters. Continue to execute S740.

S720. Obtain a thickness of the first target coating element. Continue to execute S740.

S730, obtaining coating sampling parameters. Continue to execute S740.

S740, generating a heating power adjustment amount according to the coating parameter, the thickness of the first target coating element, and the coating sampling parameter.

S750: Control an evaporation rate of the evaporation source based on the heating power adjustment amount.

In the above steps, S710, S720, and S730 are the same as S410, S520, and S620, respectively, and are not described herein again.

When the first period, the second period, and the third period are the same, the coating sampling parameters, the thickness of the first target element, and the coating parameters can be simultaneously acquired. When the first period, the second period, and the third period are different, the following two cases are included:

In one case, the three cycles are in multiples. When the coating sampling parameters, the thickness of the first target element, and the coating parameters are simultaneously acquired, subsequent operations are performed according to the acquired parameters. In another case, if the three periods are not in a multiple relationship, the data collected in the longer period and the data collected in the two shorter periods closest to the acquisition time are selected and subjected to subsequent processing.

In this embodiment, when the first deviation value is greater than the first threshold or the second deviation value is greater than the second threshold or the third deviation value is greater than the third threshold, the input of the control model is the first deviation value, the second deviation value, and the The three deviation values are obtained by the control model to obtain a heating power adjustment amount matched with each evaporation source, and output to the heater of the corresponding evaporation source. The heater of the evaporation source adjusts the heating power according to the heating power adjustment amount, thereby adjusting the evaporation rate of the evaporation source. The controller 1 continues to acquire new coating parameters from the online acquisition device 2 in a first cycle, and acquires the thickness of the first target element from the film thickness controller 7 in a second cycle, and acquires from the offline acquisition device 10 in a third cycle. Coating sampling parameters, and determining a new first deviation value, a new second deviation value, and a new third deviation value, when the first deviation value is less than or equal to the first threshold, and the second deviation value is less than or equal to the second threshold and When the three deviation value is less than or equal to the third threshold, it indicates that the evaporation rate of the evaporation source satisfies the requirement, and the control operation of the evaporation rate can be stopped.

In this embodiment, according to the received coating parameters, the thickness of the first target element, and the coating sampling parameters, the evaporation power adjustment amount corresponding to the evaporation source is obtained, and the evaporation rate is controlled more accurately.

Example eight

8 is a schematic structural diagram of an evaporation rate control device for an evaporation source according to Embodiment 8 of the present disclosure. As shown in FIG. 8, the device includes a processor 80 and a memory 81. The number of processors 80 in the device may be one. For example, the processor 80 and the memory 81 in the device may be connected by a bus or other means, and the bus connection is taken as an example in FIG.

The memory 81 is a computer readable storage medium usable for storing software programs, computer executable programs, and modules, such as program instructions/modules corresponding to the evaporation rate control method of the evaporation source in the embodiment of the present disclosure. The processor 80 executes various functional applications and data processing of the apparatus by executing software programs, instructions, and modules stored in the memory 81, that is, implementing the above-described evaporation rate control method of the evaporation source.

The memory 81 may mainly include a storage program area and an storage data area, wherein the storage program area may store an operating system, an application required for at least one function; the storage data area may store data created according to usage of the terminal, and the like. Further, the memory 81 may include a high speed random access memory, and may also include a nonvolatile memory such as at least one magnetic disk storage device, flash memory device, or other nonvolatile solid state storage device. In some examples, memory 81 can further include memory remotely located relative to processor 80, which can be connected to the device over a network. Examples of such networks include, but are not limited to, the Internet, intranets, local area networks, mobile communication networks, and combinations thereof.

Example nine

Embodiment 9 of the present disclosure further provides a computer readable storage medium having a computer program stored thereon, wherein when executed by a computer processor, an evaporation rate control method for performing an evaporation source, the method comprising:

Obtaining coating parameters;

Of course, a computer readable storage medium having a computer program stored thereon, the computer program of which is not limited to the above method operation, and can also perform the evaporation rate of the evaporation source provided by any embodiment of the present disclosure. Control related operations in the method.

Through the above description of the embodiments, those skilled in the art can clearly understand that the present disclosure can be implemented by software and necessary general hardware, and of course can also be implemented by hardware, but in many cases, the former is a better implementation. . Based on such understanding, portions of the technical solution of the present disclosure that contribute substantially or to the prior art may be embodied in the form of a software product that may be stored in a computer readable storage medium, such as a floppy disk of a computer. , Read-Only Memory (ROM), Random Access Memory (RAM), Flash (FLASH), hard disk or optical disk, etc., including a number of instructions to make a computer device (can be a personal computer) The server, or network device, etc.) performs the methods of various embodiments of the present disclosure.

Note that the above are only the preferred embodiments of the present disclosure and the technical principles applied thereto. A person skilled in the art will understand that the present disclosure is not limited to the specific embodiments described herein, and that various modifications, changes and substitutions may be made by those skilled in the art without departing from the scope of the disclosure. Therefore, the present disclosure has been described in detail by the above embodiments, but the present disclosure is not limited to the above embodiments, and the present disclosure may include more other equivalent embodiments without departing from the present disclosure. The scope is determined by the scope of the appended claims.

Claims

An evaporation rate control device for an evaporation source, comprising: a connected controller and an online collection device;

The online collecting instrument is configured to collect coating parameters of the substrate, and send the coating parameters to the controller;

The controller is configured to generate a heating power adjustment amount according to the received coating parameter, and control an evaporation rate of the evaporation source based on the heating power adjustment amount.
The apparatus according to claim 1, wherein the evaporation rate control device of the evaporation source further comprises: a film thickness controller and an acquisition unit;

The collecting component is configured to collect an oscillation frequency caused by plating a first target coating element;

The film thickness controller is respectively connected to the controller and the collecting component for acquiring a variation amount of an oscillation frequency from the collecting component, and obtaining a thickness of the first target coating element according to the variation amount, and Transmitting the thickness of the first target coating element to the controller;

The controller is configured to generate the heating power adjustment amount according to the coating parameter and a thickness of the first target coating element.
The apparatus of claim 2 wherein said acquisition component comprises a probe, a probe chamber for at least partially housing said probe, and an oscillator coupled to said probe;

The probe is configured to collect a partial pressure of the first target coating element;

The oscillator is configured to oscillate under the partial pressure of the first target coating element.
The apparatus according to claim 3, wherein the number of the collection components is at least two;

The distance between the probe chamber of the acquisition component and the evaporation source is within a set distance.
The apparatus of claim 4 wherein said acquisition component further comprises a first isolation component;

The first isolation component is mounted between the CIGS chamber and the probe chamber;

The CIGS chamber is for accommodating the evaporation source;

The first isolation component is configured to switch a communication state between the probe chamber and the CIGS chamber.
The apparatus according to claim 1 or 2, wherein the evaporation rate control device of the evaporation source further comprises: a sampling component and an offline acquisition device;

The sampling component is configured to plate a second target coating element;

The offline collecting device is respectively connected to the sampling component and the controller, and is configured to collect coating sampling parameters on the sampling component, and send the sampling parameters to the controller;

The controller is configured to generate the heating power adjustment amount according to the received coating parameter and the coating sampling parameter; or to generate the heating power according to the received coating parameter, the thickness of the first target coating element, and the coating sampling parameter Adjustment amount.
The apparatus according to claim 6, wherein said sampling means comprises: a sample piece, a sample holder for loading said sample piece, and a second isolation member;

The side of the sample rack loading the sample is attached to the second isolation component;

The second isolation component is disposed on the outer wall of the CIGS chamber for switching the contact state of the sample with the CIGS chamber;

When the second isolation component is opened, the swatch is in contact with the CIGS chamber for plating the second target coating element.
The apparatus of claim 7, wherein the second isolation component is coupled to the controller for switching the contact state in accordance with a control command of the controller.
The apparatus according to claim 7, wherein said sampling means further comprises a vacuum member;

The vacuum member is respectively connected to the sample holder and the sealing ring of the CIGS chamber for evacuating a space between the sample holder and the second isolation assembly and the CIGS chamber, and maintaining the vacuum The space between the sample holder and the second isolation assembly is the same as the vacuum of the CIGS chamber.
The device according to claim 6, wherein the online collection device is an online optical film thickness collecting instrument or an online X-ray fluorescence spectral analysis collecting instrument;

The offline acquisition instrument is an offline optical film thickness collection instrument or a flux sample detection offline X-ray fluorescence spectrum analysis acquisition instrument.
An evaporation rate control method for an evaporation source, comprising:

Obtaining coating parameters;

Generating a heating power adjustment amount according to the coating parameter;

The evaporation rate of the evaporation source is controlled based on the heating power adjustment amount.
The method according to claim 11, wherein the evaporation rate control method of the evaporation source further comprises:

Obtaining a thickness of the first target coating element;

Correspondingly, the generating a heating power adjustment amount according to the coating parameter comprises:

The heating power adjustment amount is generated according to the plating parameter and the thickness of the first target plating element.
The method according to claim 11, wherein the evaporation rate control method of the evaporation source further comprises:

Obtaining coating sampling parameters;

Correspondingly, the generating a heating power adjustment amount according to the coating parameter comprises:

The heating power adjustment amount is generated according to the plating sampling parameter and the coating parameter.
The method of claim 12, wherein the evaporation rate control method of the evaporation source further comprises:

Obtaining coating sampling parameters;

Correspondingly, the generating the heating power adjustment amount according to the coating parameter and the thickness of the first target coating element comprises:

The heating power adjustment amount is generated according to the coating parameter, the thickness of the first target plating element, and the coating sampling parameter.
An evaporation rate control device for an evaporation source, comprising:

One or more processors;

Memory for storing one or more programs,

The evaporation rate control method of the evaporation source according to any one of claims 11 to 14 when the one or more programs are executed by the one or more processors .
A computer readable storage medium having stored thereon a computer program for performing an evaporation rate control method of an evaporation source according to any of claims 11-14 when executed by a processor.