WO2019194468A1

WO2019194468A1 - Microwave plasma generator for deposition process exhaust gas trap and deposition process exhaust gas trap comprsing same

Info

Publication number: WO2019194468A1
Application number: PCT/KR2019/003616
Authority: WO
Inventors: 김대운; 장현석; 이성은; 이봉주
Original assignee: (주)그린사이언스
Priority date: 2018-04-05
Filing date: 2019-03-28
Publication date: 2019-10-10
Also published as: KR20190116613A; KR102085726B1

Abstract

The present invention relates to a microwave plasma generator with improved productivity, which can be operated for a long time due to extended maintenance cycles, of a deposition process exhaust gas trap, and to a deposition process exhaust gas trap comprising same. The microwave plasma generator of a deposition process exhaust gas trap, according to an embodiment of the present invention, comprises: an outer conductor which is coupled to a waveguide into which microwaves are introduced, which has a space in which a plasma is formed, and into which a plasma gas is introduced; quartz for transmitting the microwaves introduced to the outer conductor from the waveguide; and an inner conductor which is disposed coaxially with the outer conductor inside the outer conductor, and is disposed at the rear side of the deposition process to introduce the exhaust gas after deposition.

Description

Microwave plasma generator for deposition process exhaust gas trap and deposition process exhaust gas trap comprising same

The present invention relates to a microwave plasma apparatus of a deposition process exhaust gas trap and a deposition process exhaust gas trap comprising the same, and more particularly, in the semiconductor and display deposition process exhaust gas line in the process of fluctuations in pressure and flow rate without a matching box The present invention relates to a microwave plasma generating device of a deposition process exhaust gas trap and a deposition process exhaust gas trap including the same, which enables stable plasma trap operation, and enables a long time operation due to a reduced maintenance frequency.

Deposition processes are being performed on components in various fields such as semiconductors and display components.

The vapor deposition process is a process of attaching a metal or a polymer to vapor on various surfaces by attaching it to the surface of a deposit (target), and is widely applied to a process of forming an insulating layer, a conductive layer, a chemical protective layer, or the like.

Various methods such as chemical vapor deposition (CVD) and atomic layer deposition (ALD) have been proposed for this deposition process.

In general, a CVD method is mainly performed, and in the case of ALD, a method of forming a thin film by supplying reaction materials in a separated state and depositing particles formed by chemical reaction between reaction gases on the surface of a deposit (target), Although the growth rate of the thin film is slow, the thin film coating property is better than the PVD or CVD deposition method, and thus the application of the thin film thickness is easily controlled.

Meanwhile, unused excess gas and new molecules generated in the deposition process are exhausted from the process gases (process gas containing the deposition component and the components necessary for deposition) during deposition processes such as CVD and ALD processes. The exhaust gas is discharged into a third phase at low temperature and low energy after the deposition process, and the third phase is in the form of a highly viscous organic substance having conductivity (~ several hundred uΩ), such as a pump for exhaust. Periodic maintenance is compulsory because there is a risk of mechanical failure or malfunction due to deposition of sticky state with various mechanical parts or accumulation of particles to reduce the driving force of mechanical parts and to block the inner wall of exhaust gas line.

On the other hand, hot and cold traps have been generally used to treat the exhaust gases generated in the deposition process, but they do not perform satisfactory trap functions and require frequent maintenance and replacement of hot and cold traps. . In addition, in order to compensate for the trap performance, plasma is used to make microparticles by breaking intermolecular bonding (bonding), or to react with a separate gas to decompose or combine to form a viscous and very small powder particle and discharge it. The trap has been studied. Inductively coupled plasma traps (10), microwave plasma traps (70), and the like have been studied.

As shown in FIG. 1, the reactor 10 for inductively coupled plasma traps requires a reactor made of a dielectric such as quartz 15, and a reactor in which an exhaust gas or a deposition material reacted in the exhaust gas is formed of a dielectric such as quartz. It can be deposited on (15) to inhibit the induction of the electric field to suppress plasma generation.

The conventional inductively coupled plasma trap reactor 10 may be composed of an RF coil 17 for generating an induction electric field, a reactor 15 formed of quartz, and the like.

That is, the reactor 15 is surrounded by a coil generating an induction electric field, and the electric field is transmitted through a dielectric such as quartz to generate plasma therein.

However, the plasma for treating the exhaust gas is surrounded by a dielectric such as quartz, and has a structural limit in which a product such as powder formed by the reaction is deposited in the reactor 15. The deposited film thus unbalances the electric field, and in particular, in the case of the exhaust gas containing the metal component, the deposited film may prevent the generation of the electric field into the reactor to suppress plasma generation.

3 shows a plasma torch applied to a microwave plasma trap. As shown in FIG. 3, the torch used in the microwave plasma trap may be provided with a waveguide 60, a reactor 75, and quartz 80 through which electromagnetic waves are transmitted.

That is, the reactor 75 is provided to vertically penetrate the waveguide 60, and a space for generating plasma is formed therein.

In addition, in order for the microwaves of the waveguide 60 to flow into the reactor 75, the portion where the waveguide 60 and the reactor meet is opened, and quartz 80 is provided at the position.

The quartz 80 functions to block the inflow of gas while transmitting microwaves, and the quartz 80 separates the microwave delivery region and the plasma region.

Plasma gas and exhaust gas are introduced from the upper part of the reactor after the deposition process, and the treatment by plasma is performed in the reactor.

For example, when TiCl 4 is applied as a process gas of the deposition process, Ti ₂ (NH ₂ ), TiCl ₄ 4 (NH ₃ ), Ti, TiN powder, etc. are generated by reacting with ammonia in the reactor.

However, the position where the plasma is generated is generated near the quartz 80, and the precipitated Ti ₂ (NH ₂ ), TiCl ₄ 4 (NH ₃ ), or Ti, TiN adheres to the surface of the inner circumferential surface of the quartz 80 to form a metal component. This results in the formation of a film, which can cause arcing to damage quartz or prevent the transmission of microwaves from the waveguide, resulting in the loss of plasma.

Therefore, even when using a conventional plasma trap, maintenance is required to remove such a metal film, there is a problem that the operation of the deposition equipment is stopped every time, productivity is lowered, while maintenance costs are also increased.

In addition, the conventional plasma plasma equipment such as RF, MF, Microwave, etc. has a characteristic that plasma is generated only at a fixed pressure, but in actual equipment, an environment in which the pressure change in the equipment is severely generated is created, and thus, the conventional vacuum plasma equipment is used. The use of matching boxes is absolutely necessary for this to work.

However, there is a problem in that plasma discharge is impossible in a process in which the speed of change in pressure and flow rate is faster than the time for communicating with the matching box, and thus application to a plasma trap is impossible.

The present invention is to solve the above problems, the contamination of the dielectric, such as quartz is prevented or suppressed to increase the maintenance cycle increases the continuous operation time of the deposition equipment can be improved productivity and maintenance costs can be reduced, matching It is a problem to provide a microwave plasma generator for a deposition process exhaust gas trap and a deposition process exhaust gas trap including the same, which can be generated and maintained in a stable plasma without a box, so that it can be applied even in a process having a large variation in pressure and flow rate. to be.

The objects of the present invention are not limited to the above-mentioned objects, and other objects not mentioned will be clearly understood by those skilled in the art from the following description.

In order to solve the above problems, according to one embodiment of the present invention, the outer conductor is coupled to the waveguide through which the microwave flows, the plasma is formed therein, the outer conductor through which the plasma gas flows, and from the waveguide Quartz transmitting the microwaves flowing into the outer conductor, the outer conductor is disposed coaxially with the outer conductor, the inner conductor is disposed at the rear side of the deposition process and includes an inner conductor into which exhaust gas discharged after deposition is introduced. A microwave plasma generator of a deposition process exhaust gas trap is provided.

The quartz may be provided between the two ends on the inner circumferential surface of the outer conductor, or may be provided inside the waveguide to prevent the process gas from flowing into the waveguide. An end of the inner conductor may be formed at a position spaced apart from the quartz in the flow direction of the plasma gas.

An end of the inner conductor may be located inside the outer conductor.

Plasma gas flowing into the outer conductor may form swirl in the outer conductor.

A reaction gas for separating a metal element from the exhaust gas may be introduced into the outer conductor or the inner conductor.

The reaction gas may include hydrogen.

The quartz may be disposed at a portion where the outer conductor and the waveguide are coupled to each other.

The quartz may be disposed in the waveguide at a position spaced apart from the outer conductor.

The metal plate may further include a metal plate that seals between the outer conductor and the inner conductor at an upper side of the portion where the outer conductor communicates with the waveguide.

The metal plate may be provided to adjust its position in the longitudinal direction of the outer conductor.

The outer conductor may be provided at the outer conductor between the point where the outer conductor and the waveguide are coupled and the end of the outer conductor, and may further include an inlet for injecting the plasma gas or the reactive gas between the outer conductor and the inner conductor.

On the other hand, according to another aspect of the present invention, the deposition unit for depositing a thin film on the workpiece, the microwave plasma torch for the deposition process exhaust gas trap for converting at least a portion of the exhaust gas discharged from the deposition unit into fine powder, A deposition process exhaust gas trap provided with a microwave plasma torch including a pump for pumping exhaust gas discharged from the evaporation unit, and a powder collector for collecting particles in the exhaust gas via the microwave plasma torch of the deposition process exhaust gas trap. Is provided.

According to the microwave plasma generator of the deposition process exhaust gas trap of the present invention and the deposition process exhaust gas trap including the same, the contamination of the quartz of the plasma torch is prevented to increase the continuous operation time, improve the productivity, maintenance cost This has the effect of being saved.

The effects of the present invention are not limited to the above-mentioned effects, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

The above summary as well as the detailed description of the preferred embodiments of the present application described below will be better understood when read in connection with the accompanying drawings. Preferred embodiments are shown in the drawings for the purpose of illustrating the invention. However, it should be understood that the present application is not limited to the precise arrangements and instrumentalities shown.

1 and 2 are cross-sectional views showing a conventional plasma torch;

3 is a cross-sectional view showing a microwave plasma generator of the deposition process exhaust gas trap according to an embodiment of the present invention;

4 is a cross-sectional view illustrating a plasma reaction occurring in the plasma generator of FIG. 3;

5 and 6 show chemical reactions occurring in the plasma generator;

7 is a sectional view showing a plasma generating apparatus according to another embodiment of the present invention;

8 is a sectional view showing a plasma generating apparatus according to another embodiment of the present invention;

9 is a view illustrating a deposition process exhaust gas trap equipped with a microwave plasma generator of the present invention.

10 to 12 are photographs of the plasma discharge when the plasma power of the plasma generating apparatus according to an embodiment of the present invention is 0.7kW, 1.2kW, 1.4kW;

13 and 14 are photographs of the powder deposited when the plasma power of the plasma generating apparatus according to an embodiment of the present invention is 1.4kW;

15 and 16 are drafts and tables showing the spectral and component weight ratios of the precipitated powders.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description of this embodiment, the same name and the same reference numerals are used for the same configuration and additional description thereof will be omitted.

Microwave plasma generator 100 of the deposition process exhaust gas trap according to an embodiment of the deposition process exhaust gas trap comprising the same and the deposition process exhaust gas trap of the present invention (hereinafter, for convenience of description For the sake of convenience, the plasma generator may include an outer conductor 110, quartz 130, and an inner conductor 120, as shown in FIG. 3.

The outer conductor 110 may be coupled to the waveguide 60, may be grounded, a space may be formed therein, and plasma gas may be introduced into the inner space.

The waveguide 60 is provided with a magnetron for oscillating the microwave (M / W) and can transmit the microwave (M / W) to the inside of the outer conductor (110).

On the other hand, the microwave (M / W) does not penetrate the metal, etc. by the skin effect (skin effect), the outer conductor 110 is generally made of a material such as a metal having excellent high temperature heat resistance, the outer conductor In order for the microwave (M / W) to flow into the inside of the 110, a portion where the outer conductor 110 and the waveguide 60 are coupled is opened.

In addition, the opened portion is closed by quartz 130 capable of transmitting microwave (M / W).

At this time, the point where the outer conductor 110 is coupled to the waveguide 60 and opened is between both ends of the outer conductor 110, and thus, the quartz 130 is also both ends of the outer conductor 110. It may be provided between.

The inner conductor 120 may be made of a material such as a metal through which the microwave (M / W) does not penetrate, and may be disposed coaxially with the outer conductor 110 in the outer conductor 110.

Plasma gas may flow into the outer conductor 110, and exhaust gas exhausted after the deposition process may flow into the inner conductor 120. At this time, the plasma gas may be a gas for generating a plasma through the microwave or to stabilize the generated plasma.

Reaction gas may be introduced into the outer conductor 110 or the inner conductor 120. The reaction gas may flow into the outer conductor 110 together with the plasma gas, or may flow into the inner conductor 120 together with the exhaust gas.

At this time, the plasma gas, the exhaust gas, and the reaction gas all have the same flow direction. In this embodiment, it will be described with an example having a flow direction flowing from the upper side and discharged downward based on the drawings.

The position of the end of the inner conductor 120 may be formed at a position spaced apart from the quartz 130 in the flow direction of the plasma gas in the outer conductor 110.

Alternatively, the end of the inner conductor 120 may be formed at the same position as the end of the outer conductor 110.

In addition, the plasma gas flowing into the outer conductor 110 may form a swirl in the outer conductor 110.

Of course, the plasma gas does not necessarily cause swirl, but the plasma gas may prevent the inner conductor 120 from being overheated from heat generated by the plasma.

To this end, a separate mechanism, such as a guide (not shown), which is supplied in the direction of generating swirl when the plasma gas is supplied or may cause swirl on the inner circumferential surface of the outer conductor 110 or the outer circumferential surface of the inner conductor 120, is provided. Can be.

At this time, the plasma gas may include an inert gas such as argon or nitrogen.

In addition, the reaction gas may include hydrogen (H ₂ ) or ammonia (NH ₃ ).

The exhaust gas may be exhaust gas discharged after the deposition process. An example is a process gas containing TiCl ₄ discharged during the TiN deposition process using the ALD deposition method.

Of course, the process gas may include TiN ₄ , TiN, HCl, N, NH ₃ , TiH, and other components.

In addition, the present invention is not limited to the ALD deposition process, and may be applied to other deposition processes, and may be applied to exhaust gases of processes other than the deposition process.

In addition, the present invention is not necessarily limited to the treatment of TiCl ₄ , and may be applied to the treatment of other components such as NiCl 2, LiCl, SiCl 4, and the like.

Accordingly, as shown in FIGS. 3 and 4, the microwaves (M / W) are introduced into the outer conductor 110 through the waveguide 60 and the quartz 130, and the outer conductor 110 may be introduced into the outer conductor 110. Plasma gas and reaction gas are introduced through the upper side.

In addition, the plasma 210 may be formed by the microwave (M / W) introduced into the outer conductor 110 and the plasma gas and the reactive gas. The plasma 210 formed at this time is referred to as a non-particle plasma 210 in which particles are not generated since the plasma is formed by gases.

At this time, the introduced microwave (M / W) does not penetrate the inner conductor 120, the plasma reaction does not occur inside the inner conductor 120, the non-particle plasma 210 is the outer conductor 110 ) And the inner conductor 120.

In addition, by appropriately adjusting the length of the inner conductor 120, the strength of the electric field generated from the microwave can be strongly and weakly formed in the end region of the inner conductor 120. Accordingly, the plasma 220 may be generated at the end region of the inner conductor 120. At this time, the length of the inner conductor 120 for generating a plasma in the end region of the inner conductor 120 may be derived by a person skilled in the art through repeated experiments.

In FIG. 5, the plasma is formed in the region 210 in which the quartz 130 is provided and the region 220 formed in the end of the inner conductor 120 is formed separately. As shown in FIG. 1, the plasma may be separated and formed, or may be formed without being separated and between the outer conductor 110 and the inner conductor 120 and the lower end region of the inner conductor 120 together.

In addition, since the metal compound precursor does not flow into the gas plasma region 210 generated by the gas such as argon, nitrogen, or hydrogen, particles such as powder are not formed, so that powder or the like accumulates in the quartz 130. I never do that.

Meanwhile, since the exhaust gas introduced into the inner conductor 120 is not irradiated with microwaves (M / W) in the inner conductor 120, a plasma reaction does not occur, and is formed at the end of the inner conductor 120. Flows into the plasma region 220 and is processed by the plasma.

In this case, in order to distinguish the plasma generated at the end of the inner conductor 120 from the non-particle plasma 210 described above, it will be referred to as particle plasma 220, which is discharged from the end of the inner conductor 120 This is because the components contained in the exhaust gas are dissociated by the plasma 220 to generate particles such as metal powder.

In this embodiment, it is taken as an example that TiCl ₄ is included in the component contained in the exhaust gas.

As shown in FIG. 5, when TiCl ₄ undergoes a plasma reaction with H ₂ , a reaction gas, two molecules of hydrogen (H 2) become 4H, and TiCl _{4 is} also dissociated into Ti and 4Cl, and each H is chlorine ( Reacts with Cl to form hydrogen chloride (4HCl), and Ti may be precipitated in the form of powder 230.

Or, when such, TiCl ₄ is reacted with the reaction gas, NH ₃ shown in Figure 6, it is a Ti2NH 2HCl ₂ and can be a Ti2NH ₂ precipitated as powder 230 form.

In addition, if the generated plasma is a HDW (High Density Plasma) using a microwave (MicroWave), the particle size of the powder (230) precipitated due to the high electron density and radical (radical) is nanoscale very dense particle size Can be represented.

At this time, the position where the powder 230 is deposited is the end of the inner conductor 120, which is spaced apart from the quartz 130, so that the phenomenon that the precipitated powder 230 accumulates in the quartz 130 Can be reduced.

In addition, the powder 230 deposited by the flow of the plasma gas may be prevented from scattering toward the quartz 130.

In addition, the plasma gas may also perform a cooling function of the quartz 130.

Therefore, the precipitated powder 230 may be discharged to the outside of the outer conductor 110 and the inner conductor 120 by the flow of gas.

On the other hand, according to another embodiment of the microwave plasma generator of the deposition process exhaust gas trap of the present invention, compared with the above-described embodiment, the shape and position of the quartz can be changed.

That is, in the above-described embodiment, the quarts 130 are provided in a cylindrical shape at the portion where the waveguide 60 and the outer conductor 110 are coupled to each other, but according to the present embodiment, as shown in FIG. Quartz 132 may be provided in the waveguide 60. In this case, the quartz 132 may be formed at a position spaced apart from the opening where the waveguide 60 and the outer conductor 110 are coupled to the magnetron 20.

Therefore, the quartz 132 may be further spaced apart from the formation position of the particle plasma 220, so that the pollution prevention effect may be further increased, and the quartz 132 may be formed in a flat plate shape rather than a cylindrical shape. Since the volume of the quartz is not only small but also the formation of the quartz can be easier, the manufacturing cost of the quartz can be reduced.

On the other hand, as shown in Figure 8, the upper side of the outer conductor 110 may be further provided with a metal plate 112 for shielding the microwave transfer to the upper side of the outer conductor (110).

That is, the metal plate 112 and the outer conductor 110 and the waveguide to shield the microwaves transmitted to the inside of the outer conductor 110 through the waveguide 60 to the upper side of the outer conductor 110. On the upper side of the communicating portion of 60, it may be provided to seal between the outer conductor 110 and the inner conductor 120.

Therefore, the microwaves transmitted to the inside of the outer conductor 110 through the waveguide 60 are prevented from being vertically dispersed inside the outer conductor 110, and are concentrated toward the end of the inner conductor 120 to be concentrated on the inner conductor. An electric field may be more strongly formed at the end side of the 120.

In addition, the position where the non-particle plasma 210 and the particle plasma 220 are formed may be adjusted by adjusting the position of the metal plate 112 up and down.

Therefore, the position where the non-particle plasma 210 and the particle plasma 220 are formed may be adjusted by providing the metal plate 112 to adjust the position in the longitudinal direction of the outer conductor 110.

In this case, an injection hole 114 for injecting the plasma gas or the reaction gas between the outer conductor 110 and the inner conductor 120 may be formed.

The inlet 114 may be formed on the outer circumferential surface of the outer conductor 110 between the point where the outer conductor 110 and the waveguide 60 are coupled and the end of the outer conductor 110, the inlet 114 The plasma gas and the reactant gas introduced through the gas discharge the plasma gas and the reaction gas toward the normal direction of the inner circumferential surface of the outer conductor 110 to cause a swirl between the outer conductor 110 and the inner conductor 120. Can be.

Therefore, the plasma gas and the reaction gas flowing through the inlet 114 are introduced at the height between the height of the point connected to the waveguide 60 of the outer conductor 110 and the end of the inner conductor 120 and the outer By forming a swirl between the conductor 110 and the inner conductor 120, the powder 230 that is precipitated by flowing to the end side of the inner conductor 120 may be prevented from scattering toward the quartz 132 side.

Of course, in this case, the quartz 132 may be disposed in a cylindrical shape at the portion where the waveguide 60 and the outer conductor 110 are coupled to each other, or may be disposed in the form of a plate in the waveguide 60. Hereinafter, an embodiment of a deposition process exhaust gas trap equipped with the microwave plasma generator of the present invention will be described.

The deposition process exhaust gas trap provided with the microwave plasma generating apparatus according to the present embodiment may include a plasma generating apparatus 100, a pump 200, and a powder collector 300 as shown in FIG. 9. .

The plasma generating apparatus 100 may be applied to the plasma generating apparatus 100 of the above-described embodiments, and at least a part of the components included in the exhaust gas discharged from the deposition unit 50 for depositing a thin film on the workpiece may be fine. Can be converted to nano-sized powder.

Here, the deposition unit 50 for depositing a thin film on the workpiece will be described as an example of the deposition unit for depositing TiN on the workpiece as an ALD deposition process.

In the deposition unit 50, TiCl 4 may be vaporized in an evaporator 10 to deposit TiN, and may be mixed with nitrogen (N 2) and supplied to the TiN deposition chamber 20. In addition, N2 and NH3 may be supplied to the TiN deposition chamber 20.

On the other hand, after the TiN deposition is completed, the used gas is discharged, the exhaust gas may contain a large amount of TiCl4.

Exhaust gas containing TiCl 4 to be discharged may be introduced into the inner conductor 120 of the plasma generator 100.

In addition, some of the N 2 and NH 3 gases supplied to the TiN deposition process may be supplied to the outer conductor 110 of the plasma generator 100.

To this end,

branch passages

32 and 42 branching from the

supply passages

30 and 40 of the respective N2 and NH3 to the outer conductor 110 of the plasma generator 100 may be formed, and each

branch passage

32 and 42 may be formed. ) May be provided with a valve (34, 44) for opening and closing it.

As described above, the plasma generating apparatus 100 may convert and discharge components such as TiCl 4 contained in the inflow exhaust gas into nano-scale powder having no viscosity.

The pump 200 may be provided at the rear end of the plasma generator 100. The pump 200 is a component for pumping the exhaust gas discharged from the deposition unit 50.

At this time, the plasma generator 100 is provided at the front end of the pump 200 to convert the components contained in the exhaust gas flowing into the pump 200 into a powder of nano-scale without viscosity, the machine of the pump 200 It minimizes wear and prevents excessive deposition of components from sticking to the parts of the pump 200, thereby preventing damage to the pump 200, which can increase the service life of the pump 200, and also maintain a long maintenance cycle. Can be.

On the other hand, the powder collector 300 may be a component located at the rear end of the pump 200 to collect and remove the powder 230 contained in the exhaust gas discharged from the pump 200.

In addition, a scrubber 400 may be further provided on the rear side of the powder collector 300. The scrubber 400 may be a component for removing various harmful substances (eg, HCl) included in the exhaust gas from which the powder 230 is removed.

In addition, a sampling port 500 may be provided between the powder collector 300 and the scrubber 400. A sample of the exhaust gas before entering the scrubber 400 may be taken through the sampling port 500, and the analysis of the sample may detect whether the exhaust gas contains a toxic hydrogen or the like substance. Can be.

Of course, the sampling port 500 is provided with a sensor for detecting a toxic substance may measure the presence and concentration of the toxic substance in real time.

In addition, the microwave plasma generating apparatus according to the present invention is capable of stable plasma discharge for a long time even in a process in which pressure and flow rate change are severe.

That is, as described in the background art, the conventional plasma generators (ICP, CCP, ECR microwave plasma generator) is dependent on the matching box, it is not applicable in the process where the pressure / flow rate change faster than the communication speed with the matching box Although not possible, the microwave flame generating apparatus according to the present invention is capable of discharging plasma without using a matching box.

According to the present invention, plasma can be continuously generated in a gas flow state in a pressure range of about several mmTorr to several tens of Torr. This is because an electric field of more than a threshold voltage for plasma discharge is always formed between the outer conductor 110 and the inner conductor 120 at a pressure and a gas flow of several mmTorr to several tens of Torr.

Therefore, there is no need for a separate matching box to cope with the pressure change. This is transmitted to the end of the electric field inner conductor 120 formed by the microwave inside the waveguide, and if appropriately adjusted the gap between the grounded outer conductor 110 and the inner conductor 120, matching in the desired pressure range An electric field energy above a threshold voltage for plasma discharge may be formed without a box.

Therefore, the microwave plasma generating apparatus and the exhaust gas trap applying the same can be configured even in a process where the pressure fluctuation is severe.

Hereinafter, the results of experiments that the plasma generating apparatus of the present invention can generate a stable plasma without a matching box through the experiment conducted by the applicant.

First, the plasma power applied in this experiment is 0.7kW and 1.4kW. At this time, the pressure in the chamber where the plasma generator is located before the process gas is inserted is 0.02 Torr and the process gas is injected. The working pressur, which is the pressure of the chamber where the plasma generator is located, is 28 Torr and the flow rates of nitrogen (N ₂ ) and ammonia (NH ₃ ) are 75lpm and 2lpm, respectively. Liter Per minute), the deposition material TiCl ₄ was tested at a pressure of 250mmHg heated to approximately 100 degrees Celsius.

In this experiment, under the above conditions, nitrogen (N 2) gas was injected for 0.1 second, TiCl 4 was injected for 0.2 seconds, ammonia (NH 3) was injected for 0.25 seconds, and N 2 gas was injected for 0.3 seconds. That is, it can be seen that the pressure fluctuation is a severe environment.

As a result of operating in such an environment, the plasma discharge is shown in FIG. 10 when the plasma power is 0.7 kW, and the plasma is discharged at 1.2 kW in FIG. The state of plasma discharge is shown in FIG. As shown in Figure 10 to 12, it can be seen that the plasma is generated stably even in a large pressure fluctuation environment.

On the other hand, Figure 13 is a photograph showing the precipitated powder generated when the plasma power (Plasma Power) is 1.4kW, Figure 14 is an enlarged photograph of the powder of FIG. The powder was taken from the rear of the pump of FIG. 9, and as can be seen from the photograph, it can be seen that there is no risk of generating a sufficiently fine powder and causing mechanical fixing to the pump.

On the other hand, Figures 14 and 15 are the results of analyzing the spectra and weight ratio of the components of the powder. As can be seen from Figure 14 and 15, the weight ratio of Ti of the precipitated powder reaches 61.37 Wt% it can be seen that there is no problem in commercialization.

As described above, the preferred embodiments of the present invention have been described, and the fact that the present invention can be embodied in other specific forms in addition to the above-described embodiments without departing from the spirit or scope thereof has ordinary skill in the art. It is obvious to them. Therefore, the above-described embodiments should be regarded as illustrative rather than restrictive, and thus, the present invention is not limited to the above description and may be modified within the scope of the appended claims and their equivalents.

Claims

An outer conductor coupled to the waveguide through which microwaves are introduced, a space in which a plasma is formed, and an outer conductor into which plasma gas is introduced;

Quartz for transmitting microwaves from the waveguide to the outer conductor;

And an inner conductor disposed coaxially with the outer conductor in the outer conductor and disposed at a rear side of the deposition process, and having an inner conductor into which exhaust gas discharged after deposition is introduced.
The method of claim 1,

The quartz is,

On the inner peripheral surface of the outer conductor, provided between the both ends, the end of the inner conductor is a plasma plasma generating device of the deposition process exhaust gas trap formed in a position spaced apart from the quartz in the flow direction of the plasma gas.
The method of claim 2,

The end of the inner conductor,

Microwave plasma generator of the deposition process exhaust gas trap is located inside the outer conductor.
The method of claim 1,

And a plasma gas flowing into the outer conductor forms a swirl in the outer conductor.
The method of claim 1,

The microwave plasma generator of the deposition process exhaust gas trap is injected into the outer conductor or the inner conductor reaction gas for separating the metal element from the exhaust gas.
The method of claim 5,

The reaction gas is a microwave plasma generating device of the deposition process exhaust gas trap containing hydrogen.
The method of claim 1,

The quartz is a microwave plasma generator of the deposition process exhaust gas trap is disposed in the portion where the outer conductor and the waveguide are coupled.
The method of claim 1,

And the quartz is disposed in the waveguide at a position spaced apart from the outer conductor.
The method of claim 1,

And a metal plate sealing the gap between the outer conductor and the inner conductor on the upper portion of the outer conductor and the waveguide.
The method of claim 9,

The metal plate is a plasma plasma generator of the deposition process exhaust gas trap is provided that the position is adjustable in the longitudinal direction of the outer conductor.
The method of claim 5,

Plasma gas flowing into the outer conductor is provided at the outer conductor between the point where the outer conductor and the waveguide are coupled and the end of the outer conductor, and injecting the plasma gas or the reactive gas between the outer conductor and the inner conductor. Microwave plasma generator of the deposition process exhaust gas trap comprising an inlet for.
A deposition unit for depositing a thin film on the workpiece;

A microwave plasma generator of the deposition process exhaust gas trap according to any one of claims 1 to 11 for converting at least some of the components contained in the exhaust gas discharged from the deposition unit into fine powder;

A pump for pumping exhaust gas discharged from the deposition unit;

A powder collector for collecting particles in the exhaust gas via the microwave plasma generator of the deposition process exhaust gas trap;

Deposition process exhaust gas trap provided with a microwave plasma generating device comprising a.