KR20120139951A - Apparatus for eliminating waste gases by plasmas - Google Patents

Abstract

PURPOSE: A powder processing device using plasma is provided to chemically or thermally dissolve or reduce powder or reaction materials into stable materials using a plasma reaction device. CONSTITUTION: A reaction chamber(10) is located between a powder generating device and a vacuum pump. A microwave module(20) is connected to the reaction chamber and generates plasma in the reaction chamber. A top plate(40) is located on the upper side of the generated plasma. The top plate passes the powder and traps the generated plasma in the reaction chamber. A bottom plate(30) is located on the lower side of the generated plasma. The bottom plate traps the powder passing through the plasma and stably maintains the generated plasma. [Reference numerals] (AA) Cooling water IN; (BB) Cooling water OUT

Description

Apparatus for eliminating waste gases by plasmas

The present invention relates to a powder processing apparatus using plasma, and more specifically, to a powder, a reaction product generated during a semiconductor, LCD, LED, or photovoltaic manufacturing process, to be decomposed or stabilized using a plasma generated using microwaves. It relates to a powder processing apparatus using a plasma to reduce the material to.

The use of highly reactive chemical species generated by plasma, surface treatment of metals and polymers, various dielectric etching such as silicon wafer, glass, plasma chemical vapor deposition techniques are well known. Industrially active in accordance with the necessity of miniaturization and low temperature process is mainly atmospheric pressure low temperature plasma, it is useful for etching and deposition in the semiconductor process, surface treatment of metals and polymers, synthesis of new materials.

The plasma may be generated in vacuum or at atmospheric pressure, and may be classified into a high temperature plasma having an average temperature of several tens of degrees and a high degree of ionization, and a low temperature plasma having an average temperature slightly higher than room temperature and having a low degree of ionization.

Here, in the manufacture of various semiconductor devices or in the manufacture of liquid crystals, the gases emitted after use are toxic or flammable and have a great effect on the human body and greatly affect global warming. have.

Recently, the gas used in the manufacturing process of a semiconductor device is described by the process as follows.

First, in the etching process, CF4, SF6, CHF3, C2F6, SiF4, F2, HF, which are mainly used to etch silicon oxide, silicon nitride, and polycrystalline silicon. Fluorine gases such as NF3, chlorine gases such as Cl2, HCl, BCl3, SiCL4, CCl4 and CHCl3 used to etch aluminum and silicon, and trench-etch etch) or bromine gases such as HBr and Br2 used for etching aluminum together with Cl2. Silane, N2 and NH3 are often introduced into the chamber during the next chemical vapor deposition (CVD) process. It is used.

Particularly in the PECVD process, PFC or ClF3 is used to clean the chamber, which can generate SiF4. These gases are toxic, corrosive, and oxidative, and when released as they are, there is a risk of causing a lot of problems for the human body, the global environment, and the production facilities themselves.

Such gases are injected into a semiconductor manufacturing apparatus and used after etching, CVD, or the like, and are discharged. The exhaust gas contains a very small amount of unreacted gas.

Conventionally, the exhaust gas containing such unreacted gas has been discharged to the atmosphere as it is, but due to the above-mentioned problem, the gas scrubber is used to treat the gas discharged from the semiconductor manufacturing process, etc. There is a trend to minimize the impact.

A gas scrubber generally refers to a device for processing a gas discharged from a semiconductor or liquid crystal manufacturing process. The gas scrubber is mainly a primary gas scrubber that is directly attached to the rear of each device and a secondary gas that is installed after the primary gas scrubber. It is divided into scrubbers.

Furthermore, primary gas scrubbers are largely classified into dry gas scrubbers, combustion gas scrubbers, and wet gas scrubbers, but recently, modified products such as combustion and wet or a mixture of combustion and dry are also produced.

In addition, the production process of semiconductors, LCDs, LEDs, and solar panels is difficult to maintain an appropriate vacuum level due to clogging or narrowing of exhaust pipes due to a large amount of powder or by-products. By adding extra energy by attaching or injecting nitrogen, the powder or byproducts are prevented from sticking together or attached to the wall, thereby extending the periodic repair cycle of the exhaust pipeline or the ground pump.

However, all of these methods incur separate facility investment costs, operation costs such as electricity and nitrogen gas, and can not fundamentally prevent clogging. Therefore, maintenance and repair are inevitable for normal operation, which leads to expensive production lines. There is a problem that must be stopped periodically.

The present invention provides a powder processing apparatus using a plasma for reducing powders and reaction products generated during a semiconductor, LCD, LED, or photovoltaic manufacturing process to plasma decomposed or stabilized using plasma generated using microwaves. There is a purpose.

One side of the present invention is a powder processing device provided between the powder generating device 1 and the vacuum pump 3 for applying a vacuum to the powder generating device 1, the processing device is the powder generating device (1) Located between and the vacuum pump (3), the reaction chamber 10 in which powder is introduced to one side; A microwave module 20 connected to the reaction chamber 10 to generate plasma in the reaction chamber 10; An upper plate 40 positioned above the generated plasma and allowing the powder to pass through, wherein the generated plasma is trapped in the reaction chamber; And a lower plate 30 positioned below the generated plasma, trapping the powder passing through the plasma, and stably maintaining the generated plasma.

The powder may be trapped in such a manner that powder is deposited on the upper plate 40.

In addition, the height of the upper plate 40 and the lower plate 30 is adjusted, so that the impedance of the generated plasma can be adjusted.

In addition, the powder generating device 1 is a semiconductor manufacturing device, the powder trapped on the upper plate 40 by the cleaning gas flowing in the cleaning process of the semiconductor manufacturing device is gasified, the vacuum pump (3) Can be returned to.

Another aspect of the present invention comprises a reaction chamber (10) for connecting the generating device (1) for generating powder and the vacuum pump (3) for sucking the powder and decomposing or reacting the powder using plasma; A microwave module 20 installed in the reaction chamber 10 to generate plasma; A lower plate 30 installed inside the reaction chamber 10 and capable of lifting up and down toward the microwave module 20 and depositing powder or reactants produced by the microwave module 20; Micro particles installed in the reaction chamber 10 and filtering the powder of a predetermined size or more out of the air introduced from the production apparatus 1 side and are generated in the microwave module 20 and applied into the reaction chamber 10. An upper plate 40 which blocks the wave from leaking to the production apparatus 1 side; A lower shield installed inside the reaction chamber 10 and disposed to be spaced apart from the lower plate 30 by a predetermined interval to block leakage of the microwaves generated in the microwave module 20 between the lower plate 30. Provided is a powder processing apparatus using a plasma including (50).

Here, the reaction chamber 10 includes a production apparatus connection part 12 connected to the production apparatus 1; A vacuum pump connection unit 14 connected to the vacuum pump 3; And a reaction part 16 disposed between the production apparatus connection part 12 and the vacuum pump connection part 14 and in which powder is decomposed or reacted by the generated plasma, and the reaction part 16 includes the lower plate ( 30) and a reaction space 11 may be formed between the upper plate 40.

In addition, an inlet 13 for guiding the microwave generated by the microwave module 20 into the reaction chamber 10 may be further formed between the upper plate 40 and the lower plate 30. .

In addition, the lower plate 30 is the cooling plate 32 which is raised or lowered to the production apparatus connecting portion 12 side; It may include a lifting unit 34 for moving the cooling plate 32.

In addition, the lifting unit 34 is a screw (34a) fixed to the cooling plate (32); A screw housing (34b) surrounding the outer circumferential surface of the screw (34a) and linearly moving the screw (34a) through mutual interference with the screw (34a); It may include a lifting unit driving device for rotating the screw housing (34b).

In addition, the lower plate 30 further includes a circulation unit 36 for circulating a coolant in the cooling plate 32, and the circulation unit 36 is connected to the cooling plate 32 to supply the coolant. And connecting pipe for discharging; It may include a pump connected to the connection pipe and circulating the refrigerant.

In addition, the cooling plate 32 may include a thermoelectric semiconductor that is cooled by the thermoelectric phenomenon of the thermoelectric element.

In addition, the upper plate 40 may be formed in a mesh shape.

In addition, the lower shield 50 may be disposed in a plurality of radially around the lower plate 30.

The powder processing apparatus using the plasma according to the present invention not only decomposes or reacts the gas generated in the production apparatus by using the plasma, but also adjusts the height of the lower plate 30, thereby controlling the powder or the reactant to the cooling plate 32. There is an effect that can be deposited.

In addition, the powder processing apparatus using the plasma according to the present invention is added by periodically etching the powder or reactants deposited on the cooling plate 32 in the process of plasma fluorine compound used during the dry cleaning of the production apparatus (1) It does not require any maintenance.

Figure 1a is a layout view of the powder processing apparatus using a plasma according to an embodiment of the present invention
Figure 1b is a cross-sectional view of the powder processing apparatus using a plasma according to another embodiment of the present invention
Figure 2 is a cross-sectional view of the powder processing apparatus using a plasma according to an embodiment of the present invention
3 is a cross-sectional view of the installation of the microwave module shown in FIG.
4 is a plan view of the upper plate shown in FIG.
5 is a lower shield bottom view shown in FIG.

1A is a layout view of a powder processing apparatus using plasma according to an embodiment of the present invention, and FIG. 1B is a partial cross-sectional view of the powder processing apparatus using plasma according to another embodiment of the present invention.

2 is a cross-sectional view of the powder processing apparatus using a plasma according to an embodiment of the present invention, Figure 3 is a cross-sectional view of the microwave module shown in Figure 2, Figure 4 is a top plate plan view shown in Figure 2, FIG. 5 is a lower shield bottom view shown in FIG. 2.

As shown, the powder processing apparatus using the plasma according to the present embodiment is installed between the production apparatus 1 and the vacuum pump 3, the production apparatus using a plasma reaction apparatus, the electrode is not formed, such as microwave Chemically or thermally decompose the powder or reactant which is sucked and moved after the reaction in the reaction, gasification of the moisture component or the adhesive component to prevent the powder from being enlarged, and to adhere to the inner wall of the pipeline or the vacuum pump. .

1B is a cross-sectional view of a powder processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1B, the powder processing apparatus is provided between a powder generating apparatus 1 and a vacuum pump 3 for applying a vacuum to the powder generating apparatus 1. Located between the powder generating device 1 and the vacuum pump 3, and comprises a reaction chamber 10 in which powder is introduced to one side. Here, the reaction chamber 10 may have a diameter substantially the same as that of the tube connecting the powder generating device 1 and the vacuum pump 3 or may be larger. In the present invention, the reaction chamber 10 refers to a space in which plasma is generated and powder, which has passed through the generated plasma, reacts and is collected.

The powder generating apparatus 1 according to the present invention includes a microwave module 20 connected to the reaction chamber 10 to generate plasma in the reaction chamber 10. In one embodiment of the present invention, the microwave module 20 includes all the components of a conventional microwave plasma generator, the microwave applied through the microwave contains powder generated from the powder generating device 1 The gas is plasmaated in a vacuum. At this time, the applicant has to trap (limit, capture) the microwaves applied from the microwave module 20 and the plasma generated by the applied microwaves to a specific region in the chamber in order to effectively process the powder. It was found that the plasma conditions had to be adjusted. Therefore, in order to solve this problem, a separate plate is provided on the upper and lower portions of the plasma forming region in the chamber, and the impedance conditions of the plasma generated by adjusting two plate heights are adjusted.

Referring again to Figure 1b, the present invention is located above the generated plasma, the powder is passed through, the upper plate for trapping the generated plasma in the reaction chamber; And a lower plate 30 positioned below the generated plasma, trapping the powder passing through the plasma, and stably maintaining the generated plasma.

That is, the powder-containing gas that has passed through the upper plate 40 is trapped in such a manner that it reacts with the plasma formed below and is in contact with and deposited on the lower plate 30. On the other hand, the upper plate 40 prevents the microwaves from spreading to a region outside the specific region of the reaction chamber 10 by using a mesh method to concentrate the microwaves generated from the microwave module 20 into the chamber. .

In the embodiment of the present invention, the lower plate 30 is cooled, and reacts by plasma, or cools the contact method with a powder temperature whose temperature rises, thereby lowering the activation energy to adsorb the powder on the surface of the plate 30. . In addition, the powder processing apparatus according to the present invention is connected to the semiconductor device, the cleaning gas used in the powder removal process (cleaning process) to be carried out after the reaction process flows directly into the lower plate 30 on which the powder is deposited, a separate The powder on the plate 30 can be decomposed and removed without a washing process.

2 is a cross-sectional view of a powder processing apparatus according to an embodiment of the present invention.

Referring to FIG. 3, a powder processing apparatus for processing powder using plasma according to the present invention connects a production apparatus 1 for generating powder and a vacuum pump 3 for sucking the powder and uses powder to plasma. A reaction chamber 10 for decomposing or reacting the reaction chamber, a microwave module 20 installed in the reaction chamber 10 and generating plasma, and installed inside the reaction chamber 10 and the microwave module 20. The lower plate 30 which absorbs the microreactant generated by the plasma module 20 while being lowered to the side, and is installed inside the reaction chamber 10 and has a predetermined size of air introduced from the production apparatus 1 side. The upper plate 40 and the reaction chamber 10 to filter out the above powder and to prevent the microwave generated from the microwave module 20 is leaked Is installed and spaced apart a predetermined and the lower plate 30 includes a lower shield gap 50, which prevents the leakage of the microwave generated in the microwave module (20).

The reaction chamber 10 includes a production device connection part 12 connected to the production device 1, a vacuum pump connection part 14 connected to the vacuum pump 3, the production device connection part 12 and the vacuum pump. And a reaction part 16 disposed between the connection parts 14 and decomposing or reacting the powder by the generated plasma. Here, the production apparatus connection part 12 and the vacuum pump connection part 14 are formed in a cylindrical shape in this embodiment.

The microwave module 20 and the lower plate 30 are disposed in the reaction unit 16.

The microwave module 20 is a magnetron 22 for generating a microwave by the applied power and the waveguide 24 for transmitting the microwave generated from the magnetron 22 to the reaction unit 16 And a quartz plate 26 provided on one end side of the waveguide 24.

The magnetron 22, also called a magnetron, was invented in 1921 by AW Hull of the United States, and after placing a cathode and a grid in the axial direction with a pure copper electrode as the anode, the cathode axial direction When the magnetic field is applied, electrons protruding in the radial direction from the cathode are attracted to the anode, and at the same time, the magnetic field receives a perpendicular force in the advancing direction. As a result, the former is in spiral motion. Increasing the strength of the magnetic field increases the amount of bending of the electrons, and when the strength of the magnetic field reaches a certain limit (critical magnetic flux density), the electrons hardly reach the positive electrode. An electromagnet is generated and an induction current is generated in the vibrating circuit of the anode, and the vibration is stimulated to continue. The oscillation frequency is mostly determined by the vibration circuit, high efficiency and high output can be obtained.

The waveguide 24 is a type of transmission path for transmitting electrical energy or signals having a high frequency (1 GHz or more) of microwave or higher, and allows electromagnetic waves to pass through a tube made of an electrical conductor such as copper. It has a kind of high-pass filter property, and cannot propagate the wave longer than the cutoff wavelength, and the wavelength of the wave propagating along the waveguide axis is called the inner tube wavelength and longer than the aftershock wave length. . At low frequencies, transmission paths of two copper wires are usually used. However, at high frequencies, the resistance of copper wires increases and the dielectric loss of surrounding insulation increases, so that transmission losses cannot be used. On the other hand, since the waveguide traps and transmits radio waves, there is little resistance loss because electricity does not flow directly to surrounding conductors. Also, the inside of the tube is usually hollow and filled with air, so there is little dielectric loss. The cross-sectional shape of the tube is often rectangular or circular, and the inner surface is plated with gold or silver, and according to the size, the lowest frequency that can be transmitted is determined.

Here, the configuration of the microwave module 20 composed of the magnetron 22, the waveguide 24, and the quartz plate 26 is a general configuration for those skilled in the art, and thus a detailed description thereof will be omitted.

In the present embodiment, the microwaves oscillated by the microwave module 20 are arranged to be transmitted to the lower side of the upper plate 40, and the microwaves of the microwave module 20 are transmitted to the reaction chamber 10. An inlet 13 is formed, and a plurality of supports 15 on which the upper plate 40 is installed are disposed in the reaction chamber 10. In addition, an O-ring 28 for sealing is disposed between the reaction chamber 10 and the quartz plate 26 to seal the inlet 13.

The upper plate 40 is formed in the form of a mesh formed with a plurality of voids 41 in the present embodiment, the size of the voids 41 is adjusted according to the size of the powder to be filtered out, than the voids 41 A large size of powder cannot be entangled in the voids 41. In addition, the gap 41 should be adjusted so that the microwaves are not transmitted in consideration of the wavelength of the microwaves generated by the microwave module 20.

The lower shield 50 is for preventing the microwaves generated from the microwave module 20 from leaking, and is disposed in the circumference of the reaction unit 16, and in this embodiment, the lower plate ( 30) A plurality of circularly arranged around.

In the present embodiment, the lower shield 50 is formed in a triangular shape, and the distance from each lower shield 50 is not so that the microwave is transmitted in consideration of the wavelength of the microwave generated by the microwave module 20. Should be adjusted. In addition, each lower shield 50 is disposed radially around the lower plate 30.

The lower plate 30 has a cooling plate 32 which is moved up and down toward the production apparatus connecting unit 12, a lifting unit 34 which moves the cooling plate 32, and a coolant to the cooling plate 32. It includes a circulation unit 36 for circulating.

The cooling plate 32 is disposed between the lower shield 50, moved to the production apparatus connecting portion 12 side, and decomposes powder by plasma between the cooling plate 32 and the upper plate 40. Alternatively, a reaction space 11 for reacting is formed.

In the reaction space 11, a gas that has not reacted in the production apparatus 1 is reacted with a plasma and then deposited on the cooling plate 32 formed at a low temperature. For example, during the chemical vapor deposition (CVD) process, unreacted gases (TEOS, SiH 4, NH 3, TEPO, etc.) are deposited on the cooling plate 32, and the unreacted substances are caused by fine leakage of the exhaust device 5. It reduces the potential for oxidation to occur.

In addition, the powder or reactant deposited on the cooling plate 32 is partially reacted in the production apparatus 1 of the fluorinated gas used in the dry cleaning of the production apparatus 1 and the portion of the microwave module 20 Re-activated by the plasma generated in the), and the powder or reactants deposited on the cooling plate 32 to be converted into a gas state by etching and easily pumped and discharged without sticking or stacking to the exhaust device (5). Can be.

Here, the height of the cooling plate 32 (distance from the reaction space 11) may be set variously from 1 cm to several tens of centimeters depending on the type of process or the type of gas. For example, when the distance between the cooling plate 32 and the reaction space 11 is close, it may be hardened or sintered by the heat of plasma, and may be accumulated without being easily etched. When the distance is far, the fluorine activation gas loses energy. Etching may not be performed smoothly and reactants may remain.

The material of the cooling plate 32 is preferably a metal material such as aluminum or stainless steel, or a material that is well durable to a fluorinated plasma such as ceramic.

The lifting unit 34 surrounds the screw 34a fixed to the cooling plate 32 and the outer circumferential surface of the screw 34a and linearly moves the screw 34a through mutual interference with the screw 34a. Screw housing (34b) and the lifting unit driving device (not shown) for rotating the screw housing 34b.

The screw 34a and the screw housing 34b are configured in the same shape as the ball screw and are coupled to each other, and the screw 34a is linearly moved upward and downward by mutual interference when the screw housing 34b is rotated. .

Here, the lifting unit driving device may be a motor or the like, and rotates the screw housing 34b on the outer circumference of the screw 34a.

In addition, in this embodiment, a ball screw structure is used to raise and lower the cooling plate 32. Alternatively, a linear motor, a hydraulic cylinder, or the like may be used to directly raise and lower the cooling plate 32.

The circulation unit 36 flows through the connection pipe 36a connected to the cooling plate 32 and the connection pipe 36a and is heat-exchanged with the cooling plate 32 to define the cooling plate 32. And a coolant (not shown) for cooling below a temperature, and a pump (not shown) for circulating the coolant.

The refrigerant is supplied to the cooling plate 32 through the connection pipe 36a and then heat exchanged with the cooling plate 32 to absorb heat, and then flows to the pump side to cool the cooling plate 32.

Here, the circulation unit 36 may configure various cooling systems according to the temperature of the cooling plate 32 to be cooled, for example, using the cooling plate 32 as an evaporator, and the connection pipe 36a. A condenser (not shown), a capillary tube, or the like may be configured in the cooling system by the refrigerant.

In addition, unlike the present embodiment, a thermoelectric semiconductor (not shown) including a thermoelectric element is installed on the cooling plate 32, and the cooling plate 32 is directly cooled by a thermoelectric phenomenon by applying power to the thermoelectric semiconductor. It can also be configured to

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, This is possible.

1: production equipment 3: vacuum pump
5 exhaust device 10 reaction chamber
11: reaction space 12: production unit connection
13: inlet 14: vacuum pump connection
15: support 16: reaction part
20: microwave module 22: magnetron
24: waveguide 26: quartz plate
28: O-ring 30: lower plate
32: cooling plate 34: lifting unit
34a: screw 34b: screw housing
36: circulation unit 36a: connection piping
40: upper plate 50: lower shield

Claims (13)

A powder processing apparatus provided between a powder generating apparatus 1 and a vacuum pump 3 for applying a vacuum to the powder generating apparatus 1,
The processing device
A reaction chamber 10 located between the powder generating device 1 and the vacuum pump 3 and into which powder is introduced;
A microwave module 20 connected to the reaction chamber 10 to generate plasma in the reaction chamber 10;
An upper plate 40 positioned above the generated plasma and allowing the powder to pass through, wherein the generated plasma is trapped in the reaction chamber; And
Located in the lower portion of the generated plasma, and traps the powder passing through the plasma, comprising a lower plate (30) for maintaining the generated plasma stably.
The method of claim 1,
Powder processing apparatus in which the powder is trapped in such a way that the powder is deposited on the upper plate (40).
The method of claim 2,
The upper plate 40 and the lower plate 30 is the height is adjusted, according to the impedance of the generated plasma powder processing apparatus.
The method of claim 1,
The powder generating apparatus 1 is a semiconductor manufacturing apparatus, and powder trapped on the upper plate 40 is gasified by the cleaning gas flowing in during the cleaning process of the semiconductor manufacturing apparatus, and is re-extracted toward the vacuum pump 3. Powder processing equipment.
A reaction chamber 10 for connecting the generating device 1 for generating powder and the vacuum pump 3 for sucking the powder and decomposing or reacting the powder using plasma;
A microwave module 20 installed in the reaction chamber 10 to generate plasma;
A lower plate 30 installed inside the reaction chamber 10 and capable of lifting up and down toward the microwave module 20 and depositing powder or reactants produced by the microwave module 20;
Micro particles installed inside the reaction chamber 10 and filtering out powders having a predetermined size or more from the air introduced from the production apparatus 1 and generated in the microwave module 20 and applied into the reaction chamber 10. An upper plate 40 which blocks the wave from leaking to the production apparatus 1 side;
A lower shield installed inside the reaction chamber 10 and disposed to be spaced apart from the lower plate 30 by a predetermined interval to block leakage of the microwaves generated in the microwave module 20 between the lower plate 30. Powder processing apparatus using a plasma comprising (50).
The method according to claim 5,
The reaction chamber 10
A production apparatus connection part 12 connected to the production apparatus 1;
A vacuum pump connection unit 14 connected to the vacuum pump 3;
And a reaction part 16 disposed between the production apparatus connection part 12 and the vacuum pump connection part 14 and in which powder is decomposed or reacted by the generated plasma.
The reaction unit (16) is a powder processing apparatus using a plasma comprising a reaction space (11) is formed between the lower plate (30) and the upper plate (40).
The method of claim 6,
Powder treatment using plasma between the upper plate 40 and the lower plate 30 further formed with an inlet 13 for guiding the microwaves generated by the microwave module 20 into the reaction chamber 10. Device.
The method of claim 7,
The lower plate 30 is
A cooling plate 32 that is lifted or lowered toward the production apparatus connection part 12;
Powder processing apparatus using a plasma comprising a lifting unit (34) for moving the cooling plate (32).
The method according to claim 8,
The lifting unit 34 is
A screw (34a) fixed to the cooling plate (32);
A screw housing (34b) surrounding the outer circumferential surface of the screw (34a) and linearly moving the screw (34a) through mutual interference with the screw (34a);
Powder processing apparatus using a plasma comprising a lifting unit driving device for rotating the screw housing (34b).
The method according to claim 9,
The lower plate 30 is
Further comprising a circulation unit 36 for circulating the refrigerant in the cooling plate 32,
The circulation unit 36 is connected to the cooling plate 32 for connecting and supplying and discharging the refrigerant;
Powder processing apparatus using a plasma connected to the connecting pipe and comprising a pump for circulating the refrigerant.
The method of claim 10,
The cooling plate 32 is a powder processing apparatus using a plasma comprising a thermoelectric semiconductor is cooled by the thermoelectric phenomenon of the thermoelectric element.
The method of claim 11,
The upper plate 40 is a powder processing apparatus using a plasma formed in a mesh shape.
The method of claim 12,
The lower shield 50 is a powder processing apparatus using a plurality of plasma disposed radially around the lower plate (30).

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