JP2000026971A - Exhaust gas treating device for cvd device - Google Patents
Exhaust gas treating device for cvd deviceInfo
- Publication number
- JP2000026971A JP2000026971A JP10195207A JP19520798A JP2000026971A JP 2000026971 A JP2000026971 A JP 2000026971A JP 10195207 A JP10195207 A JP 10195207A JP 19520798 A JP19520798 A JP 19520798A JP 2000026971 A JP2000026971 A JP 2000026971A
- Authority
- JP
- Japan
- Prior art keywords
- exhaust gas
- exhaust
- pump
- cvd
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明はＣＶＤ装置の排ガス
処理装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exhaust gas treatment apparatus for a CVD apparatus.
【０００２】[0002]
【従来の技術】図３は従来のＣＶＤ装置の排ガス処理装
置を示す概略図である。図に示すように、ＣＶＤ装置１
と徐害塔（図示せず）とを接続する排ガス配管２が設け
られ、排ガス配管２にメカニカルブースタポンプ３が設
けられ、排ガス配管２のメカニカルブースタポンプ３よ
り後流側にドライポンプ４が設けられている。2. Description of the Related Art FIG. 3 is a schematic view showing a conventional exhaust gas treatment apparatus of a CVD apparatus. As shown in FIG.
An exhaust gas pipe 2 is provided to connect the exhaust gas pipe 2 to a mitigation tower (not shown). A mechanical booster pump 3 is provided in the exhaust gas pipe 2, and a dry pump 4 is provided in the exhaust gas pipe 2 on the downstream side of the mechanical booster pump 3. Have been.
【０００３】しかし、図３に示したＣＶＤ装置の排ガス
処理装置においては、ＣＶＤ装置１の未反応ガス、ＣＶ
Ｄ装置１による副生成物がメカニカルブースタポンプ
３、ドライポンプ４に負担をかけ、またＣＶＤ装置１に
よる副生成物が排ガス配管２に付着する。このため、プ
ラズマ排気処理装置を有するＣＶＤ装置の排ガス処理装
置が考えられている。[0003] However, in the exhaust gas processing apparatus of the CVD apparatus shown in FIG.
By-products from the D apparatus 1 put a burden on the mechanical booster pump 3 and dry pump 4, and by-products from the CVD apparatus 1 adhere to the exhaust gas pipe 2. For this reason, an exhaust gas treatment device of a CVD device having a plasma exhaust treatment device has been considered.
【０００４】図４はプラズマ排気処理装置を有するＣＶ
Ｄ装置の排ガス処理装置を示す概略図である。図に示す
ように、排ガス配管２のＣＶＤ装置１とメカニカルブー
スタポンプ３との間にプラズマ排気処理装置５が設けら
れている。FIG. 4 shows a CV having a plasma exhaust processing apparatus.
It is the schematic which shows the exhaust gas processing apparatus of D apparatus. As shown in the drawing, a plasma exhaust treatment device 5 is provided between the CVD device 1 and the mechanical booster pump 3 in the exhaust gas pipe 2.
【０００５】図４に示したＣＶＤ装置の排ガス処理装置
においては、プラズマ排気処理装置５により、ＣＶＤ装
置１の未反応ガスが分解されて副生成物が生成されると
ともに、ＣＶＤ装置１による副生成物およびプラズマ排
気処理装置５によって生成された副生成物の一部が排ガ
ス中から除去される。In the exhaust gas treatment apparatus of the CVD apparatus shown in FIG. 4, unreacted gas in the CVD apparatus 1 is decomposed by the plasma exhaust processing apparatus 5 to generate by-products, and The substances and some of the by-products generated by the plasma exhaust treatment device 5 are removed from the exhaust gas.
【０００６】[0006]
【発明が解決しようとする課題】しかし、図４に示した
ＣＶＤ装置の排ガス処理装置においては、ＣＶＤ装置１
による副生成物およびプラズマ排気処理装置５によって
生成された副生成物をプラズマ排気処理装置５では十分
に除去することができないから、メカニカルブースタポ
ンプ３、ドライポンプ４に負担をかけ、また排ガス配管
２に副生成物が付着する。However, in the exhaust gas treatment apparatus of the CVD apparatus shown in FIG.
By-products and by-products generated by the plasma exhaust treatment device 5 cannot be sufficiently removed by the plasma exhaust treatment device 5, so that a load is applied to the mechanical booster pump 3 and the dry pump 4 and the exhaust gas piping 2 By-products adhere to.
【０００７】本発明は上述の課題を解決するためになさ
れたもので、ポンプの負担を軽減することができ、排ガ
ス配管に付着する副生成物の量を減少することができる
ＣＶＤ装置の排ガス処理装置を提供することを目的とす
る。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problem, and can reduce the load on a pump and reduce the amount of by-products adhering to an exhaust gas pipe. It is intended to provide a device.
【０００８】[0008]
【課題を解決するための手段】この目的を達成するた
め、本発明においては、ＣＶＤ装置に接続された排ガス
配管と、上記排ガス配管に設けられたポンプと、上記排
ガス配管の上記ポンプより上流側に設けられたプラズマ
排気処理装置と、上記排ガス配管の上記プラズマ排気処
理装置と上記ポンプとの間に設けられた冷却トラップと
を設ける。According to the present invention, there is provided an exhaust gas pipe connected to a CVD apparatus, a pump provided in the exhaust gas pipe, and an upstream side of the exhaust gas pipe. And a cooling trap provided between the plasma exhaust treatment device and the pump in the exhaust gas pipe.
【０００９】[0009]
【発明の実施の形態】図１は本発明に係るＣＶＤ装置の
排ガス処理装置を示す概略図である。図に示すように、
排ガス配管２のプラズマ排気処理装置５とメカニカルブ
ースタポンプ３との間に冷却トラップ１１が設けられて
いる。FIG. 1 is a schematic view showing an exhaust gas treatment apparatus of a CVD apparatus according to the present invention. As shown in the figure,
A cooling trap 11 is provided in the exhaust gas pipe 2 between the plasma exhaust treatment device 5 and the mechanical booster pump 3.
【００１０】図２は図１に示したＣＶＤ装置の排ガス処
理装置のプラズマ排気処理装置を示す概略断面図であ
る。図に示すように、導電性材料からなりかつアース電
位の容器２１にアース電極２２が取り付けられ、アース
電極２２に対向して高周波印加電極２３が設けられ、ア
ース電極２２に円筒状のフィン２２ａが設けられ、高周
波印加電極２３に円筒状のフィン２３ａが設けられ、フ
ィン２２ａとフィン２３ａとが交互に配されて、フィン
２２ａとフィン２３ａとによって蛇行した排ガス通路２
４が形成され、容器２１に絶縁物２５が取り付けられ、
絶縁物２５を貫通した導線２８により高周波印加電極２
３に高周波電源２６が接続され、高周波電源２６と高周
波印加電極２３との間にコンデンサ２７が接続されてい
る。FIG. 2 is a schematic sectional view showing a plasma exhaust processing apparatus of the exhaust gas processing apparatus of the CVD apparatus shown in FIG. As shown in the figure, a ground electrode 22 is attached to a container 21 made of a conductive material and having a ground potential, a high-frequency application electrode 23 is provided opposite to the ground electrode 22, and a cylindrical fin 22a is provided on the ground electrode 22. The high frequency application electrode 23 is provided with cylindrical fins 23a, and the fins 22a and the fins 23a are alternately arranged, and the exhaust gas passage 2 meandered by the fins 22a and the fins 23a is provided.
4 is formed, the insulator 25 is attached to the container 21,
The high-frequency application electrode 2 is connected to the conductor 28 through the insulator 25.
3 is connected to a high-frequency power supply 26, and a capacitor 27 is connected between the high-frequency power supply 26 and the high-frequency application electrode 23.
【００１１】このＣＶＤ装置の排ガス処理装置において
は、プラズマ排気処理装置５により、排ガス中のＣＶＤ
装置１の未反応ガスが分解されて副生成物が生成される
とともに、ＣＶＤ装置１による副生成物およびプラズマ
排気処理装置５によって生成された副生成物の一部が排
ガス中から除去される。すなわち、高周波電源２６によ
り高周波印加電極２３に高周波を印加すると、容器２
１、アース電極２２、フィン２２ａと高周波電極２３、
フィン２３ａとの間にプラズマが発生し、排ガスが排ガ
ス通路２４を通過するときに次式のような反応が生じ、
排ガス中のＣＶＤ装置１の未反応ガスが分解されて副生
成物が生成される。In the exhaust gas treatment apparatus of this CVD apparatus, the plasma exhaust treatment apparatus 5
The unreacted gas in the apparatus 1 is decomposed to generate a by-product, and a part of the by-product generated by the CVD apparatus 1 and a part of the by-product generated by the plasma exhaust processing apparatus 5 are removed from the exhaust gas. That is, when a high frequency is applied to the high frequency application electrode 23 by the high frequency power supply 26, the container 2
1, earth electrode 22, fin 22a and high-frequency electrode 23,
When a plasma is generated between the fin 23a and the exhaust gas passing through the exhaust gas passage 24, the following reaction occurs,
The unreacted gas of the CVD device 1 in the exhaust gas is decomposed to generate a by-product.
【００１２】[0012]
【化１】ＳｉＨ2Ｃｌ2＋ＮＨ3→Ｓｉ3Ｎ4＋ＮＨ4ＣｌEmbedded image SiH 2 Cl 2 + NH 3 → Si 3 N 4 + NH 4 Cl
【００１３】[0013]
【化２】Ｓｉ(ＯＣ2Ｈ5)4→ＳｉＯ2＋Ｃ2Ｈ4＋Ｈ2Ｏ そして、排ガスが排ガス通路２４を通過中にＣＶＤ装置
１による副生成物およびプラズマ排気処理装置５によっ
て生成された副生成物が容器２１、アース電極２２、高
周波電極２３、フィン２２ａ、２３ａに付着し、上記副
生成物の一部が排ガス中から除去される。そして、冷却
トラップ１１においてはプラズマ排気処理装置５によっ
ては除去しきれなかった副生成物を冷却するから、冷却
トラップ１１によって上記副生成物を排ガス中から確実
に除去することができる。したがって、排ガス配管２中
を通過し、メカニカルブースタポンプ３、ドライポンプ
４で排気される排ガス中に含まれる未反応ガス、副生成
物はわずかとなるから、メカニカルブースタポンプ３、
ドライポンプ４の負担を軽減することができ、また排ガ
ス配管２に付着する副生成物の量を減少することがで
き、さらに徐害塔の交換サイクルを長くすることができ
る。## STR2 ## Si (OC 2 H 5 ) 4 → SiO 2 + C 2 H 4 + H 2 O And the exhaust gas is generated by the by-product of the CVD apparatus 1 and the plasma exhaust processing apparatus 5 while passing through the exhaust gas passage 24. By-products adhere to the container 21, the ground electrode 22, the high-frequency electrode 23, and the fins 22a, 23a, and some of the by-products are removed from the exhaust gas. The cooling trap 11 cools by-products that could not be completely removed by the plasma exhaust treatment apparatus 5, so that the cooling trap 11 can reliably remove the by-products from the exhaust gas. Therefore, the amount of unreacted gas and by-products contained in the exhaust gas passing through the exhaust gas pipe 2 and exhausted by the mechanical booster pump 3 and the dry pump 4 becomes very small.
The load on the dry pump 4 can be reduced, the amount of by-products adhering to the exhaust gas pipe 2 can be reduced, and the replacement cycle of the mitigation tower can be lengthened.
【００１４】なお、上述実施の形態においては、ポンプ
としてメカニカルブースタポンプ３およびドライポンプ
４を用いたが、他のポンプを用いてもよい。In the above-described embodiment, the mechanical booster pump 3 and the dry pump 4 are used as pumps, but other pumps may be used.
【００１５】[0015]
【発明の効果】本発明に係るＣＶＤ装置の排ガス処理装
置においては、副生成物を排ガス中から確実に除去する
ことができるから、ポンプの負担を軽減することがで
き、排ガス配管に付着する副生成物の量を減少すること
ができる。In the exhaust gas treatment apparatus for a CVD apparatus according to the present invention, by-products can be reliably removed from the exhaust gas, so that the load on the pump can be reduced, and the by-product adhering to the exhaust gas pipe can be reduced. The amount of product can be reduced.
【図１】本発明に係るＣＶＤ装置の排ガス処理装置を示
す概略図である。FIG. 1 is a schematic view showing an exhaust gas treatment apparatus of a CVD apparatus according to the present invention.
【図２】図１に示したＣＶＤ装置の排ガス処理装置のプ
ラズマ排気処理装置を示す概略断面図である。FIG. 2 is a schematic sectional view showing a plasma exhaust processing apparatus of the exhaust gas processing apparatus of the CVD apparatus shown in FIG.
【図３】従来のＣＶＤ装置の排ガス処理装置を示す概略
図である。FIG. 3 is a schematic view showing an exhaust gas treatment apparatus of a conventional CVD apparatus.
【図４】従来の他のＣＶＤ装置の排ガス処理装置を示す
概略図である。FIG. 4 is a schematic view showing an exhaust gas treatment apparatus of another conventional CVD apparatus.
１…ＣＶＤ装置 ２…排ガス配管 ３…メカニカルブースタポンプ ４…ドライポンプ ５…プラズマ排気処理装置 １１…冷却トリップ DESCRIPTION OF SYMBOLS 1 ... CVD apparatus 2 ... Exhaust gas piping 3 ... Mechanical booster pump 4 ... Dry pump 5 ... Plasma exhaust treatment apparatus 11 ... Cooling trip
フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ テーマコート゛(参考） Ｈ０１Ｌ 21/205 Ｈ０１Ｌ 21/31 Ｂ 21/31 Ｂ０１Ｄ 53/34 Ｚ Ｆターム(参考） 4D002 AA26 AC10 BA07 BA11 BA13 CA20 DA07 EA05 FA10 HA01 4G075 AA03 AA37 AA52 BA05 CA03 CA25 CA47 EA06 EC21 4K030 AA02 AA06 AA09 AA13 EA12 FA03 KA26 KA28 5F045 BB10 EG03 EG08 Continued on the front page (51) Int.Cl. 7 Identification symbol FI Theme coat II (reference) H01L 21/205 H01L 21/31 B 21/31 B01D 53/34 Z F term (reference) 4D002 AA26 AC10 BA07 BA11 BA13 CA20 DA07 EA05 FA10 HA01 4G075 AA03 AA37 AA52 BA05 CA03 CA25 CA47 EA06 EC21 4K030 AA02 AA06 AA09 AA13 EA12 FA03 KA26 KA28 5F045 BB10 EG03 EG08
Claims (1)
記排ガス配管に設けられたポンプと、上記排ガス配管の
上記ポンプより上流側に設けられたプラズマ排気処理装
置と、上記排ガス配管の上記プラズマ排気処理装置と上
記ポンプとの間に設けられた冷却トラップとを具備する
ことを特徴とするＣＶＤ装置の排ガス処理装置。An exhaust gas pipe connected to a CVD apparatus, a pump provided in the exhaust gas pipe, a plasma exhaust treatment device provided upstream of the exhaust gas pipe from the pump, and a plasma exhaust gas treatment apparatus provided in the exhaust gas pipe. An exhaust gas treatment apparatus for a CVD apparatus, comprising: an exhaust treatment apparatus; and a cooling trap provided between the pump and the pump.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10195207A JP2000026971A (en) | 1998-07-10 | 1998-07-10 | Exhaust gas treating device for cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10195207A JP2000026971A (en) | 1998-07-10 | 1998-07-10 | Exhaust gas treating device for cvd device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2000026971A true JP2000026971A (en) | 2000-01-25 |
Family
ID=16337248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10195207A Pending JP2000026971A (en) | 1998-07-10 | 1998-07-10 | Exhaust gas treating device for cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2000026971A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009156062A (en) * | 2007-12-25 | 2009-07-16 | Toyota Industries Corp | Exhaust gas treatment device |
| CN102814099A (en) * | 2012-06-08 | 2012-12-12 | 深圳市科德环保科技有限公司 | Device and method for purifying total volatile organic compounds |
| KR101219302B1 (en) | 2011-06-20 | 2013-01-25 | (주)트리플코어스코리아 | Apparatus for eliminating waste gases by plasmas |
| US20150252473A1 (en) * | 2014-03-06 | 2015-09-10 | Applied Materials, Inc. | Plasma foreline thermal reactor system |
| KR20150105250A (en) * | 2014-03-06 | 2015-09-16 | 어플라이드 머티어리얼스, 인코포레이티드 | Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system |
-
1998
- 1998-07-10 JP JP10195207A patent/JP2000026971A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009156062A (en) * | 2007-12-25 | 2009-07-16 | Toyota Industries Corp | Exhaust gas treatment device |
| KR101219302B1 (en) | 2011-06-20 | 2013-01-25 | (주)트리플코어스코리아 | Apparatus for eliminating waste gases by plasmas |
| CN102814099A (en) * | 2012-06-08 | 2012-12-12 | 深圳市科德环保科技有限公司 | Device and method for purifying total volatile organic compounds |
| CN102814099B (en) * | 2012-06-08 | 2014-11-26 | 深圳市科德环保科技有限公司 | Device and method for purifying total volatile organic compounds |
| KR20160130261A (en) * | 2014-03-06 | 2016-11-10 | 어플라이드 머티어리얼스, 인코포레이티드 | Plasma foreline thermal reactor system |
| KR20150105250A (en) * | 2014-03-06 | 2015-09-16 | 어플라이드 머티어리얼스, 인코포레이티드 | Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system |
| US20150252473A1 (en) * | 2014-03-06 | 2015-09-10 | Applied Materials, Inc. | Plasma foreline thermal reactor system |
| JP2017510453A (en) * | 2014-03-06 | 2017-04-13 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Plasma foreline thermal reactor system |
| JP2017515286A (en) * | 2014-03-06 | 2017-06-08 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Capacitively coupled plasma source, mitigation system, and vacuum processing system with enhanced Hall effect |
| US10920315B2 (en) | 2014-03-06 | 2021-02-16 | Applied Materials, Inc. | Plasma foreline thermal reactor system |
| KR102351585B1 (en) * | 2014-03-06 | 2022-01-13 | 어플라이드 머티어리얼스, 인코포레이티드 | Plasma foreline thermal reactor system |
| KR102352727B1 (en) * | 2014-03-06 | 2022-01-17 | 어플라이드 머티어리얼스, 인코포레이티드 | Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system |
| KR20220009485A (en) * | 2014-03-06 | 2022-01-24 | 어플라이드 머티어리얼스, 인코포레이티드 | Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system |
| KR102435471B1 (en) * | 2014-03-06 | 2022-08-22 | 어플라이드 머티어리얼스, 인코포레이티드 | Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system |
| JP7404445B2 (en) | 2014-03-06 | 2023-12-25 | アプライド マテリアルズ インコーポレイテッド | Hall Effect Enhanced Capacitively Coupled Plasma Sources, Mitigation Systems, and Vacuum Processing Systems |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4447469B2 (en) | Plasma generator, ozone generator, substrate processing apparatus, and semiconductor device manufacturing method | |
| KR101541817B1 (en) | Plasma reactor for purifying exhaust gas of the process facility | |
| JP2001226773A5 (en) | Processing apparatus, corrosion resistant member used therefor, and method of manufacturing corrosion resistant member | |
| KR960026344A (en) | Self-Cleaning Method and Apparatus for Polymerless Upper Electrode for Parallel Electrode Etching Operation | |
| DE60238979D1 (en) | PENNING DISCHARGE PLASMA SOURCE | |
| JP2007150012A (en) | Device and method for processing plasma | |
| KR101611955B1 (en) | Plasma reactor for purifying exhaust gas of the process facility | |
| JP2000026971A (en) | Exhaust gas treating device for cvd device | |
| JPH02234419A (en) | Plasma electrode | |
| TW521345B (en) | Plasma film-forming apparatus and cleaning method for the same | |
| JP2002356778A5 (en) | ||
| JP2000124137A (en) | Plasma processing apparatus | |
| JP2004289003A (en) | Quartz ring, plasma processor and method for manufacturing semiconductor device | |
| JP3746639B2 (en) | Plasma processing film forming equipment | |
| JPH09289198A (en) | Plasma treatment equipment and protective member for plasma treatment equipment | |
| JP2002334870A (en) | Remote plasma-cleaning method of high-density plasma cvd system | |
| JP3365742B2 (en) | Plasma CVD equipment | |
| JP2003309116A5 (en) | ||
| JP2004076122A5 (en) | ||
| JP2002210330A (en) | Waste gas treatment apparatus for semiconductor processing | |
| KR100365666B1 (en) | particle removal and chlorofluorocarbons compound decomposition system using middle frequency plasma source | |
| JP2004356509A (en) | Plasma treating apparatus | |
| JP3574558B2 (en) | Plasma processing equipment | |
| JPH05261242A (en) | Exhaust gas treating device | |
| KR101002335B1 (en) | System for Atmospheric Pressure Plasma |