WO2019181733A1 - Adhesive tape and method for manufacturing semiconductor device - Google Patents

Adhesive tape and method for manufacturing semiconductor device Download PDF

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Publication number
WO2019181733A1
WO2019181733A1 PCT/JP2019/010558 JP2019010558W WO2019181733A1 WO 2019181733 A1 WO2019181733 A1 WO 2019181733A1 JP 2019010558 W JP2019010558 W JP 2019010558W WO 2019181733 A1 WO2019181733 A1 WO 2019181733A1
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WO
WIPO (PCT)
Prior art keywords
adhesive tape
pressure
sensitive adhesive
semiconductor wafer
tape
Prior art date
Application number
PCT/JP2019/010558
Other languages
French (fr)
Japanese (ja)
Inventor
裕也 長谷川
前田 淳
卓生 西田
Original Assignee
リンテック株式会社
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Application filed by リンテック株式会社 filed Critical リンテック株式会社
Priority to JP2020508294A priority Critical patent/JP7326249B2/en
Publication of WO2019181733A1 publication Critical patent/WO2019181733A1/en

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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38Pressure-sensitive adhesives [PSA]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to an adhesive tape. More specifically, the present invention is used to temporarily fix a semiconductor wafer or chip when a semiconductor device is manufactured by making a semiconductor wafer into chips by a so-called tip dicing method and further performing dry polishing.
  • the present invention relates to an adhesive tape and a method for manufacturing a semiconductor device using the adhesive tape.
  • the thickness is generally adjusted by grinding the back surface of the semiconductor wafer.
  • grinding is performed from the back side of the wafer, the bottom of the groove is removed by grinding, the wafer is singulated, and a method called a prior dicing method is used to obtain a chip.
  • a method called a prior dicing method is used to obtain a chip.
  • the back surface grinding of the wafer and the wafer singulation can be performed simultaneously, so that a thin chip can be efficiently manufactured.
  • Patent Document 1 proposes an adhesive tape for processing a semiconductor wafer in which a radiation curable adhesive layer is provided on a base film.
  • Patent Document 1 discloses a substrate film obtained by laminating at least two different materials selected from polyethylene terephthalate, polypropylene, and ethylene-vinyl acetate copolymer as a substrate film.
  • a substrate film comprising three layers of / polyethylene terephthalate / polyethylene is disclosed.
  • Patent Document 2 discloses a back grind sheet for tip dicing in which an adhesive layer is provided on a base film composed of three layers of polyethylene / polyethylene terephthalate / polyethylene. Has been. When the back grind sheet is left on a flat surface with the pressure-sensitive adhesive layer as an upper surface, the back grind sheet is curved in a convex shape upward. By curving in a convex shape with respect to the flat surface, airtightness is maintained between the flat surface and the back grind sheet, and air leakage when adsorbing the back grind sheet during back surface grinding to the suction table is prevented.
  • Dry polishing refers to a step of polishing with a polishing puff without using water or abrasive slurry.
  • the back grind sheet side of the chip aggregate with the back grind sheet attached is adsorbed to the adsorption table and fixed.
  • the suction table and the back grind sheet are designed to have substantially the same size.
  • the dry polishing process is a finishing process, and individual chips are made extremely thin. For this reason, the shape holding force is small as compared with the wafer state, and the back grind sheet may be deformed by the internal stress of the back grind sheet.
  • the back grind sheet is easily deformed because the residual stress and shrinkage of each layer are different.
  • the airtightness between the suction table and the back grind sheet decreases, air suction reduces the suction force, and the background sheet is not sufficiently fixed become. Further, deformation during dry polishing not only causes air leakage as described above, but also causes problems such as chip breakage and scattering. When the end portion is lifted due to the deformation of the back grind sheet, the chip attached to the lifted portion and the side surface of the polishing puff come into contact with each other, and the impact may cause the chip to be damaged or scattered.
  • an object of the present invention is to provide an adhesive tape that can stably hold a wafer, a chip or the like during processing of a semiconductor wafer or the like.
  • an object of the present invention is to provide an adhesive tape that can stably hold a chip even when dry polishing is performed following the so-called tip dicing method.
  • a semiconductor chip is manufactured by a manufacturing method including a step of grinding a back surface of a semiconductor wafer having a groove formed on the surface of the semiconductor wafer, separating the semiconductor wafer into semiconductor chips by the grinding, and performing dry polishing.
  • the adhesive tape used to be affixed to the surface of the semiconductor wafer Including a base material and an adhesive layer
  • the pressure-sensitive adhesive tape was cut into a circle having a diameter of 20.32 cm, and the pressure-sensitive adhesive layer surface was faced up and left on a flat surface at 23 ° C. and 50% RH for 30 minutes.
  • An adhesive tape having a maximum value of 6 mm or less.
  • the pressure-sensitive adhesive tape according to the present invention has a small maximum floating amount at the outer peripheral portion when left on a flat surface, and can prevent curling of the pressure-sensitive adhesive tape during dry polishing. For this reason, a semiconductor chip can be manufactured with a high yield even by a prior dicing method including a dry polishing process.
  • FIG. 1 is a cross-sectional view of the pressure-sensitive adhesive tape of the present invention.
  • FIG. 2 is a view for explaining the “floating amount (L)”.
  • An adhesive tape means the laminated body containing a base material and an adhesive layer, and does not prevent including other structural layers other than these.
  • a primer layer may be formed on the base material surface on the pressure-sensitive adhesive layer side for the purpose of improving adhesion at the interface between the base material surface and the pressure-sensitive adhesive layer or preventing migration of low molecular weight components.
  • a release sheet for protecting the pressure-sensitive adhesive layer until use can be laminated.
  • the substrate may be a single layer or a multilayer having a functional layer such as a buffer layer. The same applies to the pressure-sensitive adhesive layer.
  • the “front surface” of the semiconductor wafer refers to the surface on which the circuit is formed, and the “back surface” refers to the surface on which the circuit is not formed. Dividing the semiconductor wafer into pieces means dividing the semiconductor wafer into circuits to obtain semiconductor chips.
  • the pre-dicing method refers to a method in which after a groove having a predetermined depth is formed from the front surface side of the wafer, grinding is performed from the back surface side of the wafer, and the wafer is separated into pieces by grinding.
  • Dry polishing means a process of polishing with a polishing puff without using water or abrasive slurry.
  • As the polishing puff various general-purpose polishing puffs are used, and as a commercial product, a polishing wheel “Gettering DP” or “DP08 SERIES” manufactured by Disco Corporation is used, but is not limited thereto.
  • the damaged part of the chip, that is, the grinding mark is removed by dry polishing.
  • the back grind tape is an adhesive tape used for protecting the wafer circuit surface when grinding the back surface of the semiconductor wafer, and particularly refers to an adhesive tape preferably used in the prior dicing method in this specification.
  • the pressure-sensitive adhesive tape according to the present invention is used as the back grind tape.
  • the pressure-sensitive adhesive tape 10 according to the present invention includes a base material 11 and a pressure-sensitive adhesive layer 12.
  • the structure of each member of the adhesive tape 10 of this invention is demonstrated in detail.
  • Substrate 11 As the base material 11 of the pressure-sensitive adhesive tape 10, various resin films used as the base material of the back grind tape are used.
  • the base material of the present invention may be a relatively hard resin film, for example.
  • the buffer layer which consists of a comparatively soft resin film may be laminated
  • a preferable base material has a Young's modulus of 1000 MPa or more. If a base material with a Young's modulus of less than 1000 MPa is used, the holding performance of the adhesive tape on the semiconductor wafer or semiconductor chip will be reduced, vibrations during back grinding cannot be suppressed, and chipping or breakage of the semiconductor chip will occur. It becomes easy. On the other hand, when the Young's modulus of the base material is set to 1000 MPa or more, the holding performance of the adhesive tape on the semiconductor wafer or the semiconductor chip is enhanced, vibration during back surface grinding, etc. can be suppressed, and chipping or breakage of the semiconductor chip can be prevented.
  • the Young's modulus of the base material is preferably 1800 to 30000 MPa, more preferably 2500 to 6000 MPa.
  • the thickness (D1) of the substrate 11 is not particularly limited, but is preferably 500 ⁇ m or less, more preferably 15 to 350 ⁇ m, further preferably 20 to 160 ⁇ m, and more preferably 30 ⁇ m or more. Particularly preferred.
  • the thickness of the base material 500 ⁇ m or less it becomes easy to control the peeling force of the adhesive tape.
  • various resin films can be used as a material of the base material 11.
  • a substrate having a Young's modulus of 1000 MPa or more for example, polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyester such as wholly aromatic polyester, polyimide, polyamide, polycarbonate, polyacetal, modified polyphenylene oxide, polyphenylene sulfide, polysulfone,
  • the resin film include polyether ketone and biaxially stretched polypropylene.
  • a film containing at least one selected from a polyester film, a polyamide film, a polyimide film, and a biaxially stretched polypropylene film is preferable, a polyester film is more preferable, and a polyethylene terephthalate film is further preferable.
  • the base material may contain a plasticizer, a lubricant, an infrared absorber, an ultraviolet absorber, a filler, a colorant, an antistatic agent, an antioxidant, a catalyst and the like as long as the effects of the present invention are not impaired. Good.
  • a base material has permeability
  • the base material may be subjected to an adhesion treatment such as a corona treatment in order to improve the adhesion with at least one of the buffer layer and the pressure-sensitive adhesive layer.
  • the base material may have the above-described resin film and an easy adhesion layer (primer layer) coated on at least one surface of the resin film.
  • compositions for easy-adhesion layer formation which forms an easy-adhesion layer
  • the composition containing a polyester-type resin, a urethane-type resin, a polyester urethane-type resin, an acrylic resin etc. is mentioned.
  • the easy-adhesion layer forming composition may contain a crosslinking agent, a photopolymerization initiator, an antioxidant, a softening agent (plasticizer), a filler, an antirust agent, a pigment, a dye, and the like, if necessary. Good.
  • the thickness of the easy adhesion layer is preferably 0.01 to 10 ⁇ m, more preferably 0.03 to 5 ⁇ m.
  • the Young's modulus of the base material is a resin film even when the easy adhesion layer is provided. Is substantially the same as the Young's modulus.
  • a buffer layer may be provided on one side or both sides of the substrate 11.
  • the buffer layer is made of a relatively soft resin film, and relieves vibration caused by grinding of the semiconductor wafer to prevent the semiconductor wafer from being cracked or chipped. Further, the semiconductor wafer to which the adhesive tape is attached is arranged on the suction table at the time of back surface grinding, but the adhesive tape is easily held on the suction table by providing a buffer layer.
  • the thickness (D2) of the buffer layer is preferably 8 to 80 ⁇ m, and more preferably 10 to 60 ⁇ m.
  • the tensile Young's modulus of the buffer layer is preferably 10 MPa to 5000 MPa, more preferably 50 MPa to 3000 MPa.
  • Buffer layer polypropylene film, ethylene-vinyl acetate copolymer film, ionomer resin film, ethylene / (meth) acrylic acid copolymer film, ethylene / (meth) acrylic acid ester copolymer film, LDPE film, LLDPE film Is preferred. Further, it may be a cured film obtained by casting a composition for forming a buffer layer containing an energy ray polymerizable compound and irradiating with energy rays. The base material having the buffer layer is obtained by laminating the base material and the buffer layer. In order to suppress the bending of the adhesive tape, it is preferable that the buffer layers are provided on both surfaces of the base material 11.
  • the pressure-sensitive adhesive 12 is not particularly limited as long as it has an appropriate pressure-sensitive adhesive property at room temperature, but preferably has a storage elastic modulus at 23 ° C. of 0.05 to 0.50 MPa.
  • a circuit or the like is formed on the surface of the semiconductor wafer and is usually uneven.
  • the pressure-sensitive adhesive tape has a storage elastic modulus within the above range, so that when the adhesive surface is applied to a wafer surface with unevenness, the unevenness of the wafer surface and the pressure-sensitive adhesive layer are sufficiently brought into contact with each other, and the adhesiveness of the pressure-sensitive adhesive layer is improved. It is possible to make it work properly. Therefore, it becomes possible to securely fix the adhesive tape to the semiconductor wafer and to appropriately protect the wafer surface during back grinding.
  • the storage elastic modulus of the pressure-sensitive adhesive is more preferably 0.10 to 0.35 MPa.
  • the storage elastic modulus of an adhesive means the storage elastic modulus before hardening by energy ray irradiation, when an adhesive layer is formed from an energy ray-curable adhesive.
  • the thickness (D3) of the pressure-sensitive adhesive layer is preferably less than 200 ⁇ m, more preferably 5 to 35 ⁇ m, still more preferably 10 to 30 ⁇ m.
  • the pressure-sensitive adhesive layer is formed of, for example, an acrylic pressure-sensitive adhesive, a urethane-based pressure-sensitive adhesive, a rubber-based pressure-sensitive adhesive, a silicone-based pressure-sensitive adhesive, etc., and an acrylic pressure-sensitive adhesive is preferable. Moreover, it is preferable that an adhesive layer is formed from an energy-beam curable adhesive.
  • the pressure-sensitive adhesive layer is formed from an energy-ray curable pressure-sensitive adhesive, so that the elastic modulus at 23 ° C. is set within the above range before curing by irradiation with energy rays, and the peeling force is 1000 mN / 50 mm after curing. It can be easily set as follows.
  • the adhesive layer in this invention should not be limitedly limited to these.
  • the energy ray curable adhesive include an energy ray curable adhesive containing an energy ray curable compound other than an adhesive resin in addition to a non-energy ray curable adhesive resin (also referred to as “adhesive resin I”).
  • An agent composition (hereinafter also referred to as “X-type pressure-sensitive adhesive composition”) can be used.
  • an energy ray curable adhesive an energy ray curable adhesive resin having an unsaturated group introduced into the side chain of a non-energy ray curable adhesive resin (hereinafter also referred to as “adhesive resin II”).
  • An adhesive composition that is contained as a main component and does not contain an energy ray curable compound other than an adhesive resin hereinafter also referred to as “Y-type adhesive composition”).
  • an X ray and Y type combined type that is, an energy ray curable compound containing an energy ray curable compound other than the adhesive resin in addition to the energy ray curable adhesive resin II.
  • An adhesive composition (hereinafter, also referred to as “XY-type adhesive composition”) may be used.
  • XY-type adhesive composition it is preferable to use an XY type pressure-sensitive adhesive composition.
  • the pressure-sensitive adhesive may be formed from a non-energy ray-curable pressure-sensitive adhesive composition that does not cure even when irradiated with energy rays.
  • the non-energy ray curable adhesive composition contains at least the non-energy ray curable adhesive resin I, but does not contain the energy ray curable adhesive resin II and the energy ray curable compound described above. is there.
  • adhesive resin is used as a term indicating one or both of the above-described adhesive resin I and adhesive resin II.
  • Specific examples of the adhesive resin include acrylic resins, urethane resins, rubber resins, and silicone resins. Acrylic resins are preferable.
  • acrylic adhesive in which an acrylic resin is used as the adhesive resin will be described in more detail.
  • the acrylic polymer (b) is used for the acrylic resin.
  • the acrylic polymer (b) is obtained by polymerizing a monomer containing at least an alkyl (meth) acrylate, and includes a structural unit derived from an alkyl (meth) acrylate.
  • Examples of the alkyl (meth) acrylate include those having 1 to 20 carbon atoms in the alkyl group, and the alkyl group may be linear or branched.
  • alkyl (meth) acrylate examples include methyl (meth) acrylate, ethyl (meth) acrylate, isopropyl (meth) acrylate, n-propyl (meth) acrylate, n-butyl (meth) methacrylate, 2-ethylhexyl (meth) ) Acrylate, n-octyl (meth) acrylate, isooctyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate, undecyl (meth) acrylate, dodecyl (meth) acrylate and the like.
  • Alkyl (meth) acrylates may be used alone or in combination of two or more.
  • the acrylic polymer (b) preferably contains a structural unit derived from an alkyl (meth) acrylate having an alkyl group with 4 or more carbon atoms from the viewpoint of improving the adhesive strength of the pressure-sensitive adhesive layer.
  • the alkyl (meth) acrylate preferably has 4 to 12 carbon atoms, more preferably 4 to 6 carbon atoms.
  • the alkyl (meth) acrylate whose carbon number of an alkyl group is 4 or more is an alkyl acrylate.
  • the alkyl (meth) acrylate having an alkyl group having 4 or more carbon atoms is based on the total amount of monomers constituting the acrylic polymer (b) (hereinafter also simply referred to as “monomer total amount”). Thus, it is preferably 40 to 98% by mass, more preferably 45 to 95% by mass, and still more preferably 50 to 90% by mass.
  • the acrylic polymer (b) A copolymer containing a structural unit derived from an alkyl (meth) acrylate having 1 to 3 carbon atoms is preferred.
  • the alkyl (meth) acrylate is preferably an alkyl (meth) acrylate having 1 or 2 carbon atoms, more preferably methyl (meth) acrylate, and most preferably methyl methacrylate.
  • the alkyl (meth) acrylate having an alkyl group having 1 to 3 carbon atoms is preferably 1 to 30% by mass, more preferably 3 to 26% by mass, based on the total amount of monomers. More preferably, it is 6 to 22% by mass.
  • the acrylic polymer (b) preferably has a structural unit derived from a functional group-containing monomer in addition to the structural unit derived from the alkyl (meth) acrylate.
  • the functional group of the functional group-containing monomer include a hydroxyl group, a carboxy group, an amino group, and an epoxy group.
  • the functional group-containing monomer reacts with a crosslinking agent described later to become a crosslinking starting point, or reacts with an unsaturated group-containing compound to introduce an unsaturated group into the side chain of the acrylic polymer (b). Is possible.
  • Examples of the functional group-containing monomer include a hydroxyl group-containing monomer, a carboxy group-containing monomer, an amino group-containing monomer, and an epoxy group-containing monomer. These monomers may be used alone or in combination of two or more. Among these, a hydroxyl group-containing monomer and a carboxy group-containing monomer are preferable, and a hydroxyl group-containing monomer is more preferable.
  • hydroxyl group-containing monomer examples include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, and 3-hydroxybutyl (meth) ) Acrylates, hydroxyalkyl (meth) acrylates such as 4-hydroxybutyl (meth) acrylate, and unsaturated alcohols such as vinyl alcohol and allyl alcohol.
  • carboxy group-containing monomer examples include ethylenically unsaturated monocarboxylic acids such as (meth) acrylic acid and crotonic acid; ethylenically unsaturated dicarboxylic acids such as fumaric acid, itaconic acid, maleic acid and citraconic acid, and anhydrides thereof. , 2-carboxyethyl methacrylate and the like.
  • the functional group monomer is preferably 1 to 35% by mass, more preferably 3 to 32% by mass, and still more preferably 6 to 30% by mass, based on the total amount of monomers constituting the acrylic polymer (b).
  • the acrylic polymer (b) is derived from a monomer copolymerizable with the above acrylic monomers such as styrene, ⁇ -methylstyrene, vinyl toluene, vinyl formate, vinyl acetate, acrylonitrile, acrylamide and the like.
  • a structural unit may be included.
  • the acrylic polymer (b) can be used as a non-energy ray curable adhesive resin I (acrylic resin).
  • a resin obtained by reacting a functional group of the acrylic polymer (b) with a compound having a photopolymerizable unsaturated group also referred to as an unsaturated group-containing compound. Can be mentioned.
  • An unsaturated group containing compound is a compound which has both the substituent which can be couple
  • the photopolymerizable unsaturated group include a (meth) acryloyl group, a vinyl group, and an allyl group, and a (meth) acryloyl group is preferable.
  • the substituent that the unsaturated group-containing compound can bind to the functional group include an isocyanate group and a glycidyl group.
  • examples of the unsaturated group-containing compound include (meth) acryloyloxyethyl isocyanate, (meth) acryloyl isocyanate, glycidyl (meth) acrylate, and the like.
  • the unsaturated group-containing compound preferably reacts with a part of the functional group of the acrylic polymer (b), specifically, 50 to 98 mol of the functional group of the acrylic polymer (b).
  • % Is preferably reacted with an unsaturated group-containing compound, more preferably 55 to 93 mol%.
  • Mw weight average molecular weight of the acrylic resin is preferably 300,000 to 1,600,000, more preferably 400,000 to 1,400,000, still more preferably 500,000 to 1,200,000.
  • the energy ray-curable compound contained in the X-type or XY-type pressure-sensitive adhesive composition is preferably a monomer or oligomer having an unsaturated group in the molecule and capable of being polymerized and cured by irradiation with energy rays.
  • energy ray curable compounds include trimethylolpropane tri (meth) acrylate, pentaerythritol (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4- Polyvalent (meth) acrylate monomers such as butylene glycol di (meth) acrylate, 1,6-hexanediol (meth) acrylate, urethane (meth) acrylate, polyester (meth) acrylate, polyether (meth) acrylate, epoxy ( And oligomers such as (meth) acrylate.
  • trimethylolpropane tri (meth) acrylate pentaerythritol (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate
  • urethane (meth) acrylate oligomers are preferable from the viewpoint of relatively high molecular weight and difficulty in reducing the elastic modulus of the pressure-sensitive adhesive layer.
  • the molecular weight of the energy ray-curable compound (weight average molecular weight in the case of an oligomer) is preferably 100 to 12000, more preferably 200 to 10,000, still more preferably 400 to 8000, and particularly preferably 600 to 6000.
  • the content of the energy ray curable compound in the X-type pressure-sensitive adhesive composition is preferably 40 to 200 parts by mass, more preferably 50 to 150 parts by mass, and still more preferably 60 to 100 parts by mass with respect to 100 parts by mass of the adhesive resin. 90 parts by mass.
  • the content of the energy ray-curable compound in the XY-type pressure-sensitive adhesive composition is preferably 1 to 30 parts by mass, more preferably 2 to 20 parts by mass, and still more preferably based on 100 parts by mass of the adhesive resin. Is 3 to 15 parts by mass.
  • the adhesive resin is energy ray curable, so even if the content of the energy ray curable compound is small, it is possible to sufficiently reduce the peeling force after irradiation with energy rays. It is.
  • the pressure-sensitive adhesive composition preferably further contains a crosslinking agent.
  • a crosslinking agent reacts with the functional group derived from the functional group monomer which adhesive resin has, for example, and bridge
  • the crosslinking agent include isocyanate-based crosslinking agents such as tolylene diisocyanate, hexamethylene diisocyanate, and adducts thereof; ethylene glycol glycidyl ether, 1,3-bis (N, N′-diglycidylaminomethyl) cyclohexane Epoxy crosslinking agents such as hexa [1- (2-methyl) -aziridinyl] triphosphatriazine and the like; chelating crosslinking agents such as aluminum chelates; and the like. These crosslinking agents may be used alone or in combination of two or more.
  • an isocyanate-based crosslinking agent is preferable from the viewpoints of increasing cohesive force and improving adhesive force, and availability.
  • the blending amount of the crosslinking agent is preferably 0.01 to 10 parts by mass, more preferably 0.03 to 7 parts by mass, and still more preferably 0 with respect to 100 parts by mass of the adhesive resin from the viewpoint of promoting the crosslinking reaction. .05 to 4 parts by mass.
  • an adhesive composition when an adhesive composition is energy-beam curable, it is preferable that an adhesive composition contains a photoinitiator further.
  • the curing reaction of the pressure-sensitive adhesive composition can sufficiently proceed even with relatively low energy energy rays such as ultraviolet rays.
  • photopolymerization initiator examples include benzoin compounds, acetophenone compounds, acylphosphinoxide compounds, titanocene compounds, thioxanthone compounds, peroxide compounds, and photosensitizers such as amines and quinones.
  • 1-hydroxycyclohexyl phenyl ketone 2-hydroxy-2-methyl-1-phenyl-propan-1-one
  • benzoin benzoin methyl ether
  • benzoin ethyl ether benzoin isopropyl ether
  • benzylphenyl Such as sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, dibenzyl, diacetyl, 8-chloroanthraquinone, bis (2,4,6-trimethylbenzoyl) phenylphosphine oxide, etc. It is below.
  • photopolymerization initiators may be used alone or in combination of two or more.
  • the blending amount of the photopolymerization initiator is preferably 0.01 to 10 parts by weight, more preferably 0.03 to 5 parts by weight, still more preferably 0.05 to 5 parts by weight with respect to 100 parts by weight of the adhesive resin. It is.
  • the pressure-sensitive adhesive composition may contain other additives as long as the effects of the present invention are not impaired.
  • additives include antistatic agents, antioxidants, tackifiers, softeners (plasticizers), fillers, rust inhibitors, pigments, dyes, and the like.
  • the amount of the additives is preferably 0.01 to 6 parts by mass with respect to 100 parts by mass of the adhesive resin.
  • the pressure-sensitive adhesive composition may be further diluted with an organic solvent from the viewpoint of improving applicability to a substrate or a release sheet, and may be in the form of a solution of the pressure-sensitive adhesive composition.
  • organic solvent include methyl ethyl ketone, acetone, ethyl acetate, tetrahydrofuran, dioxane, cyclohexane, n-hexane, toluene, xylene, n-propanol, isopropanol and the like.
  • the organic solvent used at the time of the synthesis of the adhesive resin may be used as it is, or other than the organic solvent used at the time of synthesis so that the solution of the pressure-sensitive adhesive composition can be uniformly applied.
  • One or more organic solvents may be added.
  • a release sheet may be attached to the surface of the adhesive tape. Specifically, the release sheet is attached to the surface of the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape. The release sheet is attached to the surface of the pressure-sensitive adhesive layer to protect the pressure-sensitive adhesive layer during transportation and storage. The release sheet is detachably attached to the adhesive tape, and is peeled off and removed from the adhesive tape before the adhesive tape is used (that is, before grinding the wafer back surface). As the release sheet, a release sheet having at least one surface subjected to a release treatment is used, and specifically, a release sheet coated on the surface of the release sheet substrate may be used.
  • a resin film is preferable, and examples of the resin constituting the resin film include polyester resin films such as polyethylene terephthalate resin, polybutylene terephthalate resin, and polyethylene naphthalate resin, polypropylene resin, polyethylene resin, and the like. Polyolefin resin and the like.
  • the release agent include rubber elastomers such as silicone resins, olefin resins, isoprene resins, and butadiene resins, long chain alkyl resins, alkyd resins, and fluorine resins.
  • the thickness of the release sheet is not particularly limited, but is preferably 10 to 200 ⁇ m, more preferably 20 to 150 ⁇ m.
  • the pressure-sensitive adhesive tape 10 includes a base material 11 and a pressure-sensitive adhesive layer 12.
  • the “floating amount” in the present invention will be described with reference to FIG.
  • the pressure-sensitive adhesive tape of the present invention is cut out into a circular shape having a diameter of 20.32 cm (8 inches), and the pressure-sensitive adhesive layer is flattened on the flat surface at 23 ° C. and 50% RH for 30 minutes with the pressure-sensitive adhesive layer surface facing up.
  • the maximum value of the floating amount from the surface is 6 mm or less, preferably 5 mm or less, more preferably 4 mm or less.
  • the maximum value (L) of the floating amount may be 0 mm, and is more preferable.
  • the maximum value of the floating amount may be 0.1 mm or more, 0.3 mm or more, or 0.5 mm or more.
  • the substrate 11 generally retains tension during film formation. Moreover, although an adhesive tape is generally wound and stored and conveyed by roll shape, a curl is attached at this time. For this reason, after the adhesive tape is unwound from the roll and cut out into a circular shape, the adhesive tape curves when left on a flat surface.
  • FIG. 2 shows an example of a concave deformation.
  • the maximum value of the floating amount may be 0 mm. This means that the adhesive tape is not curved at all or has a convex deformation. In the case of convex deformation, since the outer peripheral portion of the adhesive tape is grounded on a flat surface, the maximum value of the floating amount is 0 mm. By curving in a convex shape with respect to the flat surface, airtightness is maintained between the flat surface of the suction table and the adhesive tape, and air leakage when adhering the adhesive tape to the suction table during dry polishing is prevented. . For this reason, since the chip aggregate on the pressure-sensitive adhesive tape is held flat, the polishing surface of the polishing puff is surely in contact with the back surface side of the chip, so that chip breakage and scattering are reduced.
  • the adhesive tape deforms in a concave shape, if the maximum value of the floating amount is 6 mm or less, the outer peripheral portion of the adhesive tape is brought into close contact with the suction table by the suction force of the suction table. Chip breakage and scattering are reduced. Even if the outer peripheral portion of the adhesive tape is floating, the adhesive tape is pressed against the suction table when the polishing puff passes over the chip, so that the outer peripheral portion of the adhesive tape is in close contact with the suction table. Thereby, the flatness of the chip assembly to which the adhesive tape is affixed is ensured, and chip breakage and scattering are reduced.
  • the chip held near the outer edge of the adhesive sheet is inclined.
  • the side surface of the polishing puff may come into contact with the tilted chip, and the chip may be damaged or scattered.
  • the maximum value of the floating amount is that the pressure-sensitive adhesive tape is cut into a circular shape having a diameter of 20.32 cm (8 inches), the release sheet is peeled off, and then the pressure-sensitive adhesive layer surface is faced up and flattened at 23 ° C. and 50% RH for 30 minutes After standing, it is measured at 23 ° C. and 50% RH. After cutting out the adhesive tape, if it is allowed to stand on a flat surface, the adhesive tape is gradually curved and becomes almost steady in 30 minutes. After 30 minutes, a ruler is set on the flat surface, the ruler is made to circulate along the outer periphery of the adhesive tape, the amount of floating at each part is measured, and the maximum value is obtained.
  • the method for producing the above-mentioned pressure-sensitive adhesive tape is not particularly limited.
  • the pressure-sensitive adhesive tape can be obtained by providing a pressure-sensitive adhesive layer on one side of the substrate after evaluating the curvature of the substrate as follows.
  • one surface of the base material is a first surface and the other surface is a second surface.
  • the base material cut out to a diameter of 20.32 cm is allowed to stand on a flat surface for 30 minutes so that the first surface is the upper surface and the second surface is the lower surface.
  • an adhesive layer may be provided on any surface.
  • an adhesive layer is provided on the first surface side.
  • an adhesive layer is provided on the second surface side.
  • the curvature of the substrate can be controlled by, for example, the thickness of the substrate or the buffer layer.
  • the base material is made relatively thick, the curvature becomes low due to the rigidity of the base material.
  • the buffer layer is provided only on one surface of the base material, the laminated base material is easily bent due to the difference between the internal stress of the base material and the internal stress of the buffer layer.
  • the curvature of one buffer layer and the curvature of the other buffer layer due to internal stress cancel each other, so the laminated base material has low curvature. Become. Therefore, when providing a buffer layer on both surfaces of a base material, it is preferable to provide the same buffer layer on both surfaces.
  • Method for producing adhesive tape 10 There is no restriction
  • the pressure-sensitive adhesive layer provided on the release sheet can be bonded to one side (or buffer layer) of the substrate, and a pressure-sensitive adhesive tape having the release sheet attached to the surface of the pressure-sensitive adhesive layer can be produced.
  • the release sheet attached to the surface of the pressure-sensitive adhesive layer may be appropriately peeled and removed before using the pressure-sensitive adhesive tape.
  • the pressure-sensitive adhesive composition is directly applied on the release sheet by a known coating method, and is heated and dried to volatilize the solvent from the coating film. An agent layer can be formed.
  • the pressure-sensitive adhesive layer may be formed by directly applying a pressure-sensitive adhesive (pressure-sensitive adhesive composition) to one side (or buffer layer) of the substrate.
  • a pressure-sensitive adhesive pressure-sensitive adhesive composition
  • Examples of the method for applying the adhesive include spin coating, spray coating, bar coating, knife coating, roll coating, blade coating, die coating, and gravure coating.
  • the pressure-sensitive adhesive tape 10 of the present invention is used as a back grind tape to be attached to a wafer circuit surface when performing backside grinding and dry polishing while protecting the semiconductor wafer circuit surface in the tip dicing method.
  • An example of use as a back grind tape will be described more specifically.
  • the semiconductor device manufacturing method includes at least the following steps 1 to 4.
  • Step 1 Step of forming grooves from the surface side of the semiconductor wafer
  • Step 2 Step of applying the above adhesive tape 10 (back grind tape) to the surface of the semiconductor wafer
  • Step 3 Adhesive tape 10 is applied to the surface, and The semiconductor wafer on which the groove is formed is ground from the back surface side, the bottom of the groove is removed, the chip is separated into a plurality of chips, and further dry polishing is performed. The process of peeling individual chips from the pick-up tape after the back-grind tape is peeled off
  • step 1 a groove is formed from the surface side of the semiconductor wafer.
  • the groove formed in this step is a groove having a depth shallower than the thickness of the semiconductor wafer.
  • the groove can be formed using a conventionally known wafer dicing apparatus or the like. Further, the semiconductor wafer is divided into a plurality of semiconductor chips along the groove by removing the bottom of the groove in step 3 described later.
  • the semiconductor wafer used in the present manufacturing method may be a silicon wafer, a gallium / arsenic wafer, a sapphire wafer, or a glass wafer.
  • the thickness of the semiconductor wafer before grinding is not particularly limited, but is usually about 500 to 1000 ⁇ m.
  • a semiconductor wafer usually has a circuit formed on the surface thereof. Formation of the circuit on the wafer surface can be performed by various methods including conventionally used methods such as an etching method and a lift-off method.
  • step 2 the pressure-sensitive adhesive layer 12 of the pressure-sensitive adhesive tape 10 of the present invention is attached to the surface of the semiconductor wafer on which the grooves are formed.
  • step 3 the back surface of the semiconductor wafer on the suction table is ground to divide the semiconductor wafer into a plurality of semiconductor chips, and dry polishing is performed.
  • the back surface grinding is performed so that the semiconductor wafer is thinned to the position reaching the bottom of the groove formed on the surface of the semiconductor wafer.
  • the groove becomes a notch penetrating the wafer, and the semiconductor wafer is divided by the notch and separated into individual semiconductor chips.
  • Dry polishing means a process of polishing with a polishing puff without using water or abrasive slurry.
  • polishing puff various general-purpose polishing puffs are used, and as a commercial product, a polishing wheel “Gettering DP” or “DP08 SERIES” manufactured by Disco Corporation is used, but is not limited thereto.
  • a polishing wheel “Gettering DP” or “DP08 SERIES” manufactured by Disco Corporation is used, but is not limited thereto.
  • the shape of the separated semiconductor chip may be a square or may be an elongated shape such as a rectangle.
  • the thickness of the individual semiconductor chip is not particularly limited, but is preferably about 5 to 100 ⁇ m, more preferably 10 to 45 ⁇ m.
  • the size of the individual semiconductor chip is not particularly limited, but the chip size is preferably less than 200 mm 2 , more preferably less than 150 mm 2 , and even more preferably less than 120 mm 2 .
  • the pressure-sensitive adhesive layer 12 of the pressure-sensitive adhesive tape 10 is an energy ray-curable pressure-sensitive adhesive
  • the pressure-sensitive adhesive layer is irradiated with energy rays to cure the pressure-sensitive adhesive layer.
  • a pickup tape is affixed to the back side of the chip assembly, and position and orientation are adjusted so that pickup can be performed.
  • the ring frame disposed on the outer peripheral side of the chip assembly is also bonded to the pick-up tape, and the outer peripheral edge of the pickup tape is fixed to the ring frame.
  • the chip assembly and the ring frame may be bonded to the pickup tape at the same time, or may be bonded at different timings.
  • only the back grind tape 10 is peeled off, and the chip aggregate is transferred onto the pickup tape.
  • the pick-up tape is expanded to separate the chips, and individual semiconductor chips on the pick-up tape are picked up and fixed on a substrate or the like to manufacture a semiconductor device.
  • the pickup tape is not particularly limited, but is constituted by, for example, an adhesive tape called a dicing tape including a base material and an adhesive layer provided on one surface of the base material.
  • the adhesive strength of the pickup tape only needs to be greater than the adhesive strength of the back grind tape at the time of peeling.
  • an energy ray curable adhesive tape is preferably used as the pickup tape.
  • an adhesive tape can be used instead of the pickup tape.
  • the adhesive tape is a laminate of a film adhesive and a release sheet, a laminate of a dicing tape and a film adhesive, and an adhesive layer and a release sheet having the functions of both a dicing tape and a die bonding tape.
  • the dicing die-bonding tape etc. which become.
  • a film adhesive may be bonded to the back side of the separated semiconductor wafer before the pickup tape is applied. When using a film adhesive, the film adhesive may have the same shape as the wafer.
  • the measurement method and evaluation method in the present invention are as follows. [Maximum floating value]
  • the pressure-sensitive adhesive tape wound in a roll is cut into a circular shape with a diameter of 20.32 cm (8 inches), and the release sheet is peeled off. Then, the pressure-sensitive adhesive layer surface is faced up and the surface is kept flat on a flat surface at 23 ° C. and 50% RH for 30 minutes. Put. After 30 minutes, a ruler is set on a flat surface in an environment of 23 ° C. and 50% RH, the ruler is made to circulate along the outer peripheral portion of the adhesive tape, the amount of floating at each part is measured, and the maximum value is obtained.
  • the adhesive tape with release sheet obtained in Examples and Comparative Examples was set on a tape laminator (trade name “RAD-3510”, manufactured by Lintec Corporation) while peeling off the release sheet, and grooves were formed on the wafer surface by the tip dicing method. It was affixed to the formed 12-inch silicon wafer (thickness: 760 ⁇ m) under the following conditions. Roll height: 0mm Roll temperature: 23 ° C (room temperature) Table temperature: 23 ° C (room temperature) The obtained silicon wafer with an adhesive tape was separated into pieces having a thickness of 30 ⁇ m and a chip size of 1 mm ⁇ 1 mm by back surface grinding (tip dicing method).
  • the ground surface was polished with DPG8760 manufactured by Disco Corporation. “Gettering DP” manufactured by Disco Corporation was used for the grinding wheel. By this polishing, the damaged portion (grinding trace) of the chip was removed. After completion of dry polishing, the state of the chip held at the end of the adhesive tape was visually observed to confirm the presence or absence of chip scattering. The case where there was no chip scattering was defined as “good”, and the case where the chip was scattered was defined as “bad”.
  • Multilayer substrate A polyethylene terephthalate film (Young's modulus: 2500 MPa) having a thickness of 75.0 ⁇ m, 50.0 ⁇ m, and 25.0 ⁇ m was used as the substrate. Multilayer substrates 1 to 3 were prepared in which a buffer layer (LDPE, low density polyethylene) having a thickness of 27.5 ⁇ m was provided on both surfaces of these substrates.
  • LDPE low density polyethylene
  • Multilayer substrate 1 LDPE (27.5 ⁇ m) / PET (75 ⁇ m) / LDPE (27.5 ⁇ m)
  • Multilayer substrate 2 LDPE (27.5 ⁇ m) / PET (50 ⁇ m) / LDPE (27.5 ⁇ m)
  • Multilayer substrate 3 LDPE (27.5 ⁇ m) / PET (25 ⁇ m) / LDPE (27.5 ⁇ m)
  • One side of the multilayer base material is a first side, and the other side is a second side.
  • the multilayer base material cut out to a diameter of 20.32 cm is allowed to stand for 30 minutes on a flat surface so that the first surface is the upper surface and the second surface is the lower surface.
  • an adhesive layer was provided on the first surface side.
  • an adhesive layer was provided on the second surface side.
  • this energy ray-curable acrylic resin To 100 parts by mass of this energy ray-curable acrylic resin, 6 parts by weight of polyfunctional urethane acrylate (trade name: Shikou UT-4332, manufactured by Nippon Synthetic Chemical Industry Co., Ltd.), which is an energy ray-curable compound, isocyanate-based crosslinking agent (Tosoh Co., Ltd., trade name: Coronate L) 0.375 parts by mass based on solid content and 1 part by weight of a photopolymerization initiator consisting of bis (2,4,6-trimethylbenzoyl) phenylphosphine oxide were added.
  • a coating solution for the pressure-sensitive adhesive composition was prepared by diluting with a solvent.

Abstract

[Problem] To provide an adhesive tape that can stably retain a chip even when dry polishing has been performed following a so-called Dicing Before Grinding method. [Solution] An adhesive tape that is used when manufacturing semiconductor chips according to a manufacturing method including a step in which dry polishing is performed after grinding a back surface of a semiconductor wafer that has a groove formed in a front surface thereof, said semiconductor wafer being diced into semiconductor chips due to said grinding, said adhesive tape being used by being affixed to the front surface of the semiconductor wafer and including a substrate and an adhesive layer, wherein after the adhesive tape is cut into a 20.32cm-diameter circle and is left to stand on a flat surface with the adhesive layer surface facing up for 30 minutes at 23°C and 50% RH, the maximum value of the amount of lifting of an outer circumferential section of the tape away from the flat surface is 6mm or less.

Description

粘着テープおよび半導体装置の製造方法Adhesive tape and semiconductor device manufacturing method
 本発明は粘着テープに関し、さらに詳しくはいわゆる先ダイシング法により半導体ウエハをチップ化し、さらにドライポリッシュを行って半導体装置を製造する際に、半導体ウエハやチップを一時的に固定するために使用される粘着テープ、及びその粘着テープを用いた半導体装置の製造方法に関する。 The present invention relates to an adhesive tape. More specifically, the present invention is used to temporarily fix a semiconductor wafer or chip when a semiconductor device is manufactured by making a semiconductor wafer into chips by a so-called tip dicing method and further performing dry polishing. The present invention relates to an adhesive tape and a method for manufacturing a semiconductor device using the adhesive tape.
 各種電子機器の小型化、多機能化が進む中、それらに搭載される半導体チップも同様に、小型化、薄型化が求められている。チップの薄型化のために、半導体ウエハの裏面を研削して厚さ調整を行うことが一般的である。また、ウエハの表面側から所定深さの溝を形成した後、ウエハ裏面側から研削を行い、研削により溝の底部を除去してウエハを個片化し、チップを得る先ダイシング法と呼ばれる工法を利用することもある。先ダイシング法では、ウエハの裏面研削と、ウエハの個片化を同時に行うことができるので、薄型チップを効率よく製造できる。 As electronic devices are becoming smaller and more multifunctional, semiconductor chips mounted on them are also required to be smaller and thinner. In order to reduce the thickness of the chip, the thickness is generally adjusted by grinding the back surface of the semiconductor wafer. In addition, after forming a groove of a predetermined depth from the front side of the wafer, grinding is performed from the back side of the wafer, the bottom of the groove is removed by grinding, the wafer is singulated, and a method called a prior dicing method is used to obtain a chip. Sometimes used. In the first dicing method, the back surface grinding of the wafer and the wafer singulation can be performed simultaneously, so that a thin chip can be efficiently manufactured.
 従来、半導体ウエハの裏面研削時や、先ダイシング法によるチップの製造時には、ウエハ表面の回路を保護し、また、半導体ウエハ及び半導体チップを固定しておくために、ウエハ表面にバックグラインドシートと呼ばれる粘着テープを貼付するのが一般的である。 Conventionally, when grinding a back surface of a semiconductor wafer or manufacturing a chip by a pre-dicing method, a circuit on the surface of the wafer is protected, and the semiconductor wafer and the semiconductor chip are fixed, so that the wafer surface is called a back grind sheet. It is common to stick an adhesive tape.
 先ダイシング法において使用するバックグラインドシートとしては、基材と、基材の一方の面に設けた粘着剤層とを備える粘着テープが使用されている。このような粘着テープの一例として、特開2015-185691号公報(特許文献1)には、基材フィルム上に放射線硬化性粘着剤層を設けた半導体ウエハ加工用粘着テープが提案されている。特許文献1には、基材フィルムとして、少なくともポリエチレンテレフタレート、ポリプロピレンおよびエチレン-酢酸ビニル共重合体から選択された2種類の異なる材料を積層した基材フィルムが開示され、好ましい具体例としては、ポリエチレン/ポリエチレンテレフタレート/ポリエチレンの3層からなる基材フィルムが開示されている。 As a back grind sheet used in the previous dicing method, an adhesive tape including a base material and an adhesive layer provided on one surface of the base material is used. As an example of such an adhesive tape, Japanese Unexamined Patent Application Publication No. 2015-185691 (Patent Document 1) proposes an adhesive tape for processing a semiconductor wafer in which a radiation curable adhesive layer is provided on a base film. Patent Document 1 discloses a substrate film obtained by laminating at least two different materials selected from polyethylene terephthalate, polypropylene, and ethylene-vinyl acetate copolymer as a substrate film. A substrate film comprising three layers of / polyethylene terephthalate / polyethylene is disclosed.
 また、特開2013-129723号公報(特許文献2)にも同様に、ポリエチレン/ポリエチレンテレフタレート/ポリエチレンの3層からなる基材フィルムに粘着剤層が設けられた先ダイシング用のバックグラインドシートが開示されている。このバックグラインドシートは、粘着剤層を上面にして平坦面に静置した際には、上方向に凸状に湾曲する。平坦面に対し凸状に湾曲することで、平坦面とバックグラインドシートとの間で気密性が保たれ、裏面研削時のバックグラインドシートを吸着テーブルに吸着させる際のエア漏れが防止される。 Similarly, Japanese Unexamined Patent Application Publication No. 2013-129723 (Patent Document 2) discloses a back grind sheet for tip dicing in which an adhesive layer is provided on a base film composed of three layers of polyethylene / polyethylene terephthalate / polyethylene. Has been. When the back grind sheet is left on a flat surface with the pressure-sensitive adhesive layer as an upper surface, the back grind sheet is curved in a convex shape upward. By curving in a convex shape with respect to the flat surface, airtightness is maintained between the flat surface and the back grind sheet, and air leakage when adsorbing the back grind sheet during back surface grinding to the suction table is prevented.
 上記のような先ダイシング法によるウエハの個片化時には、裏面研削を行う際に、研削時に発生する熱や研削屑を除去するため、研削面に水を供給しながら裏面研削を行う。しかし、このような従来の裏面研削では、チップ裏面に研削痕が残り、チップの抗折強度を損なう要因となることが判明した。特にチップの薄型化の結果、チップは破損しやすくなり、抗折強度の低下は問題視されている。 When wafers are singulated by the tip dicing method as described above, backside grinding is performed while supplying water to the grinding surface in order to remove heat generated during grinding and grinding debris when performing backside grinding. However, it has been found that in such conventional back surface grinding, grinding marks remain on the back surface of the chip, which is a factor that impairs the die bending strength of the chip. In particular, as a result of the thinning of the chip, the chip is easily damaged, and a decrease in the bending strength is regarded as a problem.
特開2015-185691号公報Japanese Patent Laying-Open No. 2015-185691 特開2013-129723号公報JP 2013-129723 A
 上記のような研削痕(以下、これらを総称して「ダメージ部」と呼ぶことがある)を除去するため、水を用いた裏面研削後に、さらに最終的に水を用いないドライポリッシュによりダメージ部を除去し、チップの抗折強度を向上させることが検討されている。ドライポリッシュとは、水や砥粒のスラリーを用いずに研磨パフにより研磨する工程をいう。 In order to remove the above-mentioned grinding marks (hereinafter, these may be collectively referred to as “damaged parts”), after the back surface grinding using water, the damaged part is finally dry-polished without using water. It has been studied to improve the bending strength of the chip. Dry polishing refers to a step of polishing with a polishing puff without using water or abrasive slurry.
 ドライポリッシュ時は、バックグラインドシートを貼付したチップ集合体のバックグラインドシート側を吸着テーブルに吸着し、固定する。吸着テーブルとバックグラインドシートとは、略同サイズに設計されている。ドライポリッシュ工程は仕上げ工程であり個片化されたチップは極薄化されている。このため、ウエハ状態に比べて形状保持力が小さく、バックグラインドシートの内部応力などによって、バックグラインドシートが変形することがある。特に特許文献1、2のような多層構造の基材を用いた場合には、各層の残留応力や収縮性が異なるため、バックグラインドシートは変形し易い。 At the time of dry polishing, the back grind sheet side of the chip aggregate with the back grind sheet attached is adsorbed to the adsorption table and fixed. The suction table and the back grind sheet are designed to have substantially the same size. The dry polishing process is a finishing process, and individual chips are made extremely thin. For this reason, the shape holding force is small as compared with the wafer state, and the back grind sheet may be deformed by the internal stress of the back grind sheet. In particular, when a base material having a multilayer structure as in Patent Documents 1 and 2 is used, the back grind sheet is easily deformed because the residual stress and shrinkage of each layer are different.
 バックグラインドシートの外周部が浮き上がるよう(すなわち凹状)に変形すると、吸着テーブルとバックグラインドシートとの間の気密性が低下し、エア漏れにより吸引力が低下し、バックグランドシートの固定が不十分になる。また、ドライポリッシュ時の変形は、上記のようなエア漏れだけではなく、チップの破損、飛散という問題も招来する。バックグラインドシートの変形により端部が浮き上がると、浮き上がった部分に貼付されているチップと、研磨パフの側面とが接触し、この衝撃によりチップが破損したり、飛散することがある。チップの破損、飛散は歩留りの低下を招くだけではなく、剥離したチップが、他のチップに接触して他のチップを破損または汚染し、また研削装置に損傷を与えたり、次工程への搬送不良原因となる。特許文献1、2では、このようなドライポリッシュ工程で懸念される独特の課題については何ら認識されていない。 If the outer periphery of the back grind sheet is deformed so that it floats (ie, has a concave shape), the airtightness between the suction table and the back grind sheet decreases, air suction reduces the suction force, and the background sheet is not sufficiently fixed become. Further, deformation during dry polishing not only causes air leakage as described above, but also causes problems such as chip breakage and scattering. When the end portion is lifted due to the deformation of the back grind sheet, the chip attached to the lifted portion and the side surface of the polishing puff come into contact with each other, and the impact may cause the chip to be damaged or scattered. Chip breakage and scattering not only lead to a decrease in yield, but the peeled chips touch other chips to damage or contaminate other chips, damage the grinding machine, and transport to the next process Causes a defect. Patent Documents 1 and 2 do not recognize any peculiar problems that are a concern in such a dry polishing process.
 したがって、本発明は、半導体ウエハ等の加工時にウエハやチップ等を安定して保持できる粘着テープを提供することを目的としている。特に、いわゆる先ダイシング法に続いて、ドライポリッシュを行った場合であってもチップを安定して保持できる粘着テープを提供することを目的としている。 Therefore, an object of the present invention is to provide an adhesive tape that can stably hold a wafer, a chip or the like during processing of a semiconductor wafer or the like. In particular, an object of the present invention is to provide an adhesive tape that can stably hold a chip even when dry polishing is performed following the so-called tip dicing method.
 このような課題の解決を目的とした本発明の要旨は以下の通りである。
(1)半導体ウエハ表面に溝が形成された半導体ウエハの裏面を研削して、その研削により半導体ウエハを半導体チップに個片化した後、ドライポリッシュを行う工程を含む製造方法によって半導体チップを製造する際に、半導体ウエハの表面に貼付されて使用される粘着テープであって、
 基材と、粘着剤層とを含み、
 該粘着テープを直径20.32cmの円形に切り出し、粘着剤層面を上に向けて、23℃50%RHで30分間平坦面に静置後の、該テープ外周部の平坦面からの浮き量の最大値が6mm以下である、粘着テープ。
(2)前記浮き量の最大値が4mm以下である、(1)に記載の粘着テープ。
(3)前記基材の両面に緩衝層が設けられてなり、一方の緩衝層上に粘着剤層を有する、(1)または(2)に記載の粘着テープ。
(4)半導体ウエハの表面側から溝を形成する工程と、
 前記半導体ウエハの表面に、基材と、粘着剤層とを含む粘着テープであって、該粘着テープを直径20.32cmの円形に切り出し、粘着剤層面を上に向けて、23℃50%RHで30分静置後の、該テープ外周部の浮き量の最大値が6mm以下である粘着テープ、を貼付する工程と、
 前記粘着テープが表面に貼付され、かつ前記溝が形成された半導体ウエハを、裏面側から研削して、前記溝の底部を除去して複数のチップに個片化させる工程と、
 前記半導体ウエハを半導体チップに個片化した後、ドライポリッシュを行う工程と、
 前記粘着テープから、チップを剥離する工程と、
 を備える半導体装置の製造方法。
The gist of the present invention aimed at solving such problems is as follows.
(1) A semiconductor chip is manufactured by a manufacturing method including a step of grinding a back surface of a semiconductor wafer having a groove formed on the surface of the semiconductor wafer, separating the semiconductor wafer into semiconductor chips by the grinding, and performing dry polishing. When the adhesive tape used to be affixed to the surface of the semiconductor wafer,
Including a base material and an adhesive layer,
The pressure-sensitive adhesive tape was cut into a circle having a diameter of 20.32 cm, and the pressure-sensitive adhesive layer surface was faced up and left on a flat surface at 23 ° C. and 50% RH for 30 minutes. An adhesive tape having a maximum value of 6 mm or less.
(2) The adhesive tape according to (1), wherein the maximum value of the floating amount is 4 mm or less.
(3) The pressure-sensitive adhesive tape according to (1) or (2), wherein a buffer layer is provided on both surfaces of the base material and has a pressure-sensitive adhesive layer on one buffer layer.
(4) forming a groove from the surface side of the semiconductor wafer;
A pressure-sensitive adhesive tape comprising a base material and a pressure-sensitive adhesive layer on the surface of the semiconductor wafer, the pressure-sensitive adhesive tape being cut into a circle having a diameter of 20.32 cm, the pressure-sensitive adhesive layer surface facing upward, and 23 ° C. and 50% RH A step of applying an adhesive tape having a maximum floating amount of the outer peripheral portion of the tape of 6 mm or less after standing for 30 minutes;
A step of grinding the semiconductor wafer with the adhesive tape affixed to the front surface and the groove formed from the back side, removing the bottom of the groove and dividing it into a plurality of chips;
A step of dry polishing after separating the semiconductor wafer into semiconductor chips;
A step of peeling the chip from the adhesive tape;
A method for manufacturing a semiconductor device comprising:
 本発明に係る粘着テープは、平坦面に静置した際の外周部の浮き量の最大値が小さく、ドライポリッシュ時の粘着テープのカールを防止できる。このため、ドライポリッシュ工程を含む先ダイシング法でも高い歩留りで半導体チップを製造することができる。 The pressure-sensitive adhesive tape according to the present invention has a small maximum floating amount at the outer peripheral portion when left on a flat surface, and can prevent curling of the pressure-sensitive adhesive tape during dry polishing. For this reason, a semiconductor chip can be manufactured with a high yield even by a prior dicing method including a dry polishing process.
図1は本発明の粘着テープの断面図である。FIG. 1 is a cross-sectional view of the pressure-sensitive adhesive tape of the present invention. 図2は「浮き量(L)」を説明する図面である。FIG. 2 is a view for explaining the “floating amount (L)”.
 以下、本発明に係る粘着テープについて、図面を参照しながら具体的に説明する。まず、本明細書で使用する主な用語を説明する。
 本明細書において、例えば「(メタ)アクリレート」とは、「アクリレート」及び「メタクリレート」の双方を示す語として用いており、他の類似用語についても同様である。
Hereinafter, the adhesive tape according to the present invention will be specifically described with reference to the drawings. First, main terms used in this specification will be described.
In this specification, for example, “(meth) acrylate” is used as a term indicating both “acrylate” and “methacrylate”, and the same applies to other similar terms.
 粘着テープとは、基材と、粘着剤層とを含む積層体を意味し、これら以外の他の構成層を含むことを妨げない。たとえば、粘着剤層側の基材表面には基材表面と粘着剤層界面での密着性向上や低分子量成分の移行防止等を目的としプライマー層が形成されていてもよく、粘着剤層の表面には、使用時まで粘着剤層を保護するための剥離シートが積層されていてもよい。また、基材は単層であってもよく、緩衝層などの機能層を備えた多層であってもよい。粘着剤層も同様である。
 半導体ウエハの「表面」とは回路が形成された面を指し、「裏面」は回路が形成されていない面を指す。
 半導体ウエハの個片化とは、半導体ウエハを回路毎に分割し、半導体チップを得ることを言う。
An adhesive tape means the laminated body containing a base material and an adhesive layer, and does not prevent including other structural layers other than these. For example, a primer layer may be formed on the base material surface on the pressure-sensitive adhesive layer side for the purpose of improving adhesion at the interface between the base material surface and the pressure-sensitive adhesive layer or preventing migration of low molecular weight components. On the surface, a release sheet for protecting the pressure-sensitive adhesive layer until use can be laminated. Further, the substrate may be a single layer or a multilayer having a functional layer such as a buffer layer. The same applies to the pressure-sensitive adhesive layer.
The “front surface” of the semiconductor wafer refers to the surface on which the circuit is formed, and the “back surface” refers to the surface on which the circuit is not formed.
Dividing the semiconductor wafer into pieces means dividing the semiconductor wafer into circuits to obtain semiconductor chips.
 先ダイシング法とは、ウエハの表面側から所定深さの溝を形成した後、ウエハ裏面側から研削を行い、研削によりウエハを個片化する方法を言う。
 ドライポリッシュとは、水や砥粒のスラリーを用いずに研磨パフにより研磨する工程を意味する。研磨パフとしては各種汎用の研磨パフが用いられ、市販品としては、ディスコ社の研磨ホイール「Gettering DP」や、「DP08 SERIES」が用いられるが、これらに限定されない。ドライポリッシュによりチップのダメージ部、すなわち研削痕を除去する。
The pre-dicing method refers to a method in which after a groove having a predetermined depth is formed from the front surface side of the wafer, grinding is performed from the back surface side of the wafer, and the wafer is separated into pieces by grinding.
Dry polishing means a process of polishing with a polishing puff without using water or abrasive slurry. As the polishing puff, various general-purpose polishing puffs are used, and as a commercial product, a polishing wheel “Gettering DP” or “DP08 SERIES” manufactured by Disco Corporation is used, but is not limited thereto. The damaged part of the chip, that is, the grinding mark is removed by dry polishing.
 バックグラインドテープとは、半導体ウエハの裏面研削時にウエハ回路面を保護するために使用される粘着テープであり、特に本明細書では先ダイシング法に好ましく使用される粘着テープを指す。 The back grind tape is an adhesive tape used for protecting the wafer circuit surface when grinding the back surface of the semiconductor wafer, and particularly refers to an adhesive tape preferably used in the prior dicing method in this specification.
 本発明に係る粘着テープは、上記バックグラインドテープとして用いられる。本発明に係る粘着テープ10は、図1に示すように、基材11と、粘着剤層12とを含む。以下に、本発明の粘着テープ10の各部材の構成をさらに詳細に説明する。
[基材11]
 粘着テープ10の基材11には、バックグラインドテープの基材として使用されている各種の樹脂フィルムが用いられる。
The pressure-sensitive adhesive tape according to the present invention is used as the back grind tape. As shown in FIG. 1, the pressure-sensitive adhesive tape 10 according to the present invention includes a base material 11 and a pressure-sensitive adhesive layer 12. Below, the structure of each member of the adhesive tape 10 of this invention is demonstrated in detail.
[Substrate 11]
As the base material 11 of the pressure-sensitive adhesive tape 10, various resin films used as the base material of the back grind tape are used.
 以下に本発明で用いられる基材11の一例を詳述するが、これらは単に基材の入手を容易するための記載であって、何ら限定的に解釈されるべきではない。 Hereinafter, although an example of the base material 11 used in the present invention will be described in detail, these are merely descriptions for facilitating the acquisition of the base material and should not be construed as limiting in any way.
 本発明の基材は、たとえば比較的硬質の樹脂フィルムであってもよい。また、基材の片面もしくは両面には、比較的軟質の樹脂フィルムからなる緩衝層が積層されていてもよい。 The base material of the present invention may be a relatively hard resin film, for example. Moreover, the buffer layer which consists of a comparatively soft resin film may be laminated | stacked on the single side | surface or both surfaces of a base material.
 好ましい基材は、ヤング率が1000MPa以上である。ヤング率が1000MPa未満の基材を使用すると、粘着テープによる半導体ウエハ又は半導体チップに対する保持性能が低下し、裏面研削時の振動等を抑制することができず、半導体チップの欠けや破損が発生しやすくなる。一方、基材のヤング率を1000MPa以上とすることで、粘着テープによる半導体ウエハ又は半導体チップに対する保持性能が高まり、裏面研削時の振動等を抑制し、半導体チップの欠けや破損を防止できる。また、粘着テープを半導体チップから剥離する際の応力を小さくすることが可能になり、テープ剥離時に生じるチップ欠けや破損を防止できる。さらに、粘着テープを半導体ウエハに貼付する際の作業性も良好にすることが可能である。このような観点から、基材のヤング率は、好ましくは1800~30000MPa、より好ましくは2500~6000MPaである。 A preferable base material has a Young's modulus of 1000 MPa or more. If a base material with a Young's modulus of less than 1000 MPa is used, the holding performance of the adhesive tape on the semiconductor wafer or semiconductor chip will be reduced, vibrations during back grinding cannot be suppressed, and chipping or breakage of the semiconductor chip will occur. It becomes easy. On the other hand, when the Young's modulus of the base material is set to 1000 MPa or more, the holding performance of the adhesive tape on the semiconductor wafer or the semiconductor chip is enhanced, vibration during back surface grinding, etc. can be suppressed, and chipping or breakage of the semiconductor chip can be prevented. In addition, it is possible to reduce the stress when the adhesive tape is peeled from the semiconductor chip, and chip chipping or breakage that occurs when the tape is peeled can be prevented. Furthermore, it is possible to improve the workability when attaching the adhesive tape to the semiconductor wafer. From such a viewpoint, the Young's modulus of the base material is preferably 1800 to 30000 MPa, more preferably 2500 to 6000 MPa.
 基材11の厚さ(D1)は特に限定されないが、500μm以下であることが好ましく、15~350μmであることがより好ましく、20~160μmであることがさらに好ましく、また30μm以上であることが特に好ましい。基材の厚さを500μm以下とすることで、粘着テープの剥離力を制御しやすくなる。また、15μm以上とすることで、基材が粘着テープの支持体としての機能を果たしやすくなる。 The thickness (D1) of the substrate 11 is not particularly limited, but is preferably 500 μm or less, more preferably 15 to 350 μm, further preferably 20 to 160 μm, and more preferably 30 μm or more. Particularly preferred. By making the thickness of the base material 500 μm or less, it becomes easy to control the peeling force of the adhesive tape. Moreover, by setting it as 15 micrometers or more, it becomes easy for a base material to fulfill | perform the function as a support body of an adhesive tape.
 基材11の材質としては、種々の樹脂フィルムを用いることができる。ここで、ヤング率が1000MPa以上の基材として、たとえばポリエチレンテレフタレート、ポリエチレンナフタレート、ポリブチレンテレフタレート、全芳香族ポリエステル等のポリエステル、ポリイミド、ポリアミド、ポリカーボネート、ポリアセタール、変性ポリフェニレンオキシド、ポリフェニレンスルフィド、ポリスルホン、ポリエーテルケトン、二軸延伸ポリプロピレン等の樹脂フィルムが挙げられる。
 これら樹脂フィルムの中でも、ポリエステルフィルム、ポリアミドフィルム、ポリイミドフィルム、二軸延伸ポリプロピレンフィルムから選ばれる1種以上を含むフィルムが好ましく、ポリエステルフィルムを含むことがより好ましく、ポリエチレンテレフタレートフィルムを含むことがさらに好ましい。
As a material of the base material 11, various resin films can be used. Here, as a substrate having a Young's modulus of 1000 MPa or more, for example, polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyester such as wholly aromatic polyester, polyimide, polyamide, polycarbonate, polyacetal, modified polyphenylene oxide, polyphenylene sulfide, polysulfone, Examples of the resin film include polyether ketone and biaxially stretched polypropylene.
Among these resin films, a film containing at least one selected from a polyester film, a polyamide film, a polyimide film, and a biaxially stretched polypropylene film is preferable, a polyester film is more preferable, and a polyethylene terephthalate film is further preferable. .
 また、基材には、本発明の効果を損なわない範囲において、可塑剤、滑剤、赤外線吸収剤、紫外線吸収剤、フィラー、着色剤、帯電防止剤、酸化防止剤、触媒等を含有させてもよい。また、基材は、粘着剤層を硬化する際に照射されるエネルギー線に対して透過性を有する。 In addition, the base material may contain a plasticizer, a lubricant, an infrared absorber, an ultraviolet absorber, a filler, a colorant, an antistatic agent, an antioxidant, a catalyst and the like as long as the effects of the present invention are not impaired. Good. Moreover, a base material has permeability | transmittance with respect to the energy ray irradiated when hardening an adhesive layer.
 また、基材の少なくとも一方の表面には、緩衝層及び粘着剤層の少なくとも一方との密着性を向上させるために、コロナ処理等の接着処理を施してもよい。また、基材は、上記した樹脂フィルムと、樹脂フィルムの少なくとも一方の表面に被膜された易接着層(プライマー層)とを有しているものでもよい。 Further, at least one surface of the base material may be subjected to an adhesion treatment such as a corona treatment in order to improve the adhesion with at least one of the buffer layer and the pressure-sensitive adhesive layer. Moreover, the base material may have the above-described resin film and an easy adhesion layer (primer layer) coated on at least one surface of the resin film.
 易接着層を形成する易接着層形成用組成物としては、特に限定されないが、例えば、ポリエステル系樹脂、ウレタン系樹脂、ポリエステルウレタン系樹脂、アクリル系樹脂等を含む組成物が挙げられる。易接着層形成用組成物には、必要に応じて、架橋剤、光重合開始剤、酸化防止剤、軟化剤(可塑剤)、充填剤、防錆剤、顔料、染料等を含有してもよい。 Although it does not specifically limit as a composition for easy-adhesion layer formation which forms an easy-adhesion layer, For example, the composition containing a polyester-type resin, a urethane-type resin, a polyester urethane-type resin, an acrylic resin etc. is mentioned. The easy-adhesion layer forming composition may contain a crosslinking agent, a photopolymerization initiator, an antioxidant, a softening agent (plasticizer), a filler, an antirust agent, a pigment, a dye, and the like, if necessary. Good.
 易接着層の厚さとしては、好ましくは0.01~10μm、より好ましくは0.03~5μmである。なお、易接着層の厚さは、基材の厚さに対して小さく、材質も柔らかいため、ヤング率に与える影響は小さく、基材のヤング率は、易接着層を有する場合でも、樹脂フィルムのヤング率と実質的に同一である。 The thickness of the easy adhesion layer is preferably 0.01 to 10 μm, more preferably 0.03 to 5 μm. In addition, since the thickness of the easy adhesion layer is smaller than the thickness of the base material and the material is soft, the influence on the Young's modulus is small. The Young's modulus of the base material is a resin film even when the easy adhesion layer is provided. Is substantially the same as the Young's modulus.
[緩衝層]
 上記基材11の片面もしくは両面には、緩衝層が設けられていても良い。緩衝層は、比較的軟質の樹脂フィルムからなり、半導体ウエハの研削による振動を緩和して、半導体ウエハに割れ及び欠けが生じることを防止する。また、粘着テープを貼付した半導体ウエハは、裏面研削時に、吸着テーブル上に配置されるが、粘着テープは緩衝層を設けたことで、吸着テーブルに適切に保持されやすくなる。
[Buffer layer]
A buffer layer may be provided on one side or both sides of the substrate 11. The buffer layer is made of a relatively soft resin film, and relieves vibration caused by grinding of the semiconductor wafer to prevent the semiconductor wafer from being cracked or chipped. Further, the semiconductor wafer to which the adhesive tape is attached is arranged on the suction table at the time of back surface grinding, but the adhesive tape is easily held on the suction table by providing a buffer layer.
 緩衝層の厚さ(D2)は、8~80μmであることが好ましく、10~60μmであることがさらに好ましい。また緩衝層の引張ヤング率は、好ましくは10MPa~5000MPa、さらに好ましくは50MPa~3000MPaである。このような緩衝層を設けることで、粘着テープの湾曲を効果的に抑制できる。 The thickness (D2) of the buffer layer is preferably 8 to 80 μm, and more preferably 10 to 60 μm. The tensile Young's modulus of the buffer layer is preferably 10 MPa to 5000 MPa, more preferably 50 MPa to 3000 MPa. By providing such a buffer layer, it is possible to effectively suppress the bending of the adhesive tape.
 緩衝層は、ポリプロピレンフィルム、エチレン-酢酸ビニル共重合体フィルム、アイオノマー樹脂フィルム、エチレン・(メタ)アクリル酸共重合体フィルム、エチレン・(メタ)アクリル酸エステル共重合体フィルム、LDPEフィルム、LLDPEフィルムが好ましい。また、エネルギー線重合性化合物を含む緩衝層形成用組成物をキャスト製膜し、エネルギー線照射して得られる硬化膜であってもよい。緩衝層を有する基材は、基材と緩衝層とをラミネートして得られる。粘着テープの湾曲を抑制する上では、緩衝層は基材11の両面に設けられることが好ましい。 Buffer layer: polypropylene film, ethylene-vinyl acetate copolymer film, ionomer resin film, ethylene / (meth) acrylic acid copolymer film, ethylene / (meth) acrylic acid ester copolymer film, LDPE film, LLDPE film Is preferred. Further, it may be a cured film obtained by casting a composition for forming a buffer layer containing an energy ray polymerizable compound and irradiating with energy rays. The base material having the buffer layer is obtained by laminating the base material and the buffer layer. In order to suppress the bending of the adhesive tape, it is preferable that the buffer layers are provided on both surfaces of the base material 11.
[粘着剤層12]
 粘着剤12は、常温において適度な感圧接着性を有する限り特に限定はされないが、23℃における貯蔵弾性率が0.05~0.50MPaであるものが好ましい。半導体ウエハの表面には、回路等が形成され通常凹凸がある。粘着テープは、貯蔵弾性率が上記範囲内となることで、凹凸があるウエハ表面に貼付される際、ウエハ表面の凹凸と粘着剤層とを十分に接触させ、かつ粘着剤層の接着性を適切に発揮させることが可能になる。そのため、粘着テープの半導体ウエハへの固定を確実に行い、かつ裏面研削時にウエハ表面を適切に保護することが可能になる。これらの観点から、粘着剤の貯蔵弾性率は、0.10~0.35MPaであることがより好ましい。なお、粘着剤の貯蔵弾性率とは、粘着剤層がエネルギー線硬化性粘着剤から形成される場合には、エネルギー線照射による硬化前の貯蔵弾性率を意味する。
[Adhesive layer 12]
The pressure-sensitive adhesive 12 is not particularly limited as long as it has an appropriate pressure-sensitive adhesive property at room temperature, but preferably has a storage elastic modulus at 23 ° C. of 0.05 to 0.50 MPa. A circuit or the like is formed on the surface of the semiconductor wafer and is usually uneven. The pressure-sensitive adhesive tape has a storage elastic modulus within the above range, so that when the adhesive surface is applied to a wafer surface with unevenness, the unevenness of the wafer surface and the pressure-sensitive adhesive layer are sufficiently brought into contact with each other, and the adhesiveness of the pressure-sensitive adhesive layer is improved. It is possible to make it work properly. Therefore, it becomes possible to securely fix the adhesive tape to the semiconductor wafer and to appropriately protect the wafer surface during back grinding. From these viewpoints, the storage elastic modulus of the pressure-sensitive adhesive is more preferably 0.10 to 0.35 MPa. In addition, the storage elastic modulus of an adhesive means the storage elastic modulus before hardening by energy ray irradiation, when an adhesive layer is formed from an energy ray-curable adhesive.
 粘着剤層の厚さ(D3)は、200μm未満であることが好ましく、5~35μmがより好ましく、10~30μmがさらに好ましい。粘着剤層をこのように薄くすると、粘着テープにおいて、剛性の低い部分の割合を少なくすることができるため、研削精度の向上が図れる。また、裏面研削時に生じる半導体チップの欠けを一層防止しやすくなる。 The thickness (D3) of the pressure-sensitive adhesive layer is preferably less than 200 μm, more preferably 5 to 35 μm, still more preferably 10 to 30 μm. When the pressure-sensitive adhesive layer is thinned in this way, the proportion of the low-rigidity portion in the pressure-sensitive adhesive tape can be reduced, so that the grinding accuracy can be improved. Further, it becomes easier to prevent chipping of the semiconductor chip that occurs during back grinding.
 粘着剤層は、例えば、アクリル系粘着剤、ウレタン系粘着剤、ゴム系粘着剤、シリコーン系粘着剤等から形成されるが、アクリル系粘着剤が好ましい。
 また、粘着剤層は、エネルギー線硬化性粘着剤から形成されることが好ましい。粘着剤層は、エネルギー線硬化性粘着剤から形成されることで、エネルギー線照射による硬化前には、23℃における弾性率を上記範囲に設定しつつ、硬化後においては剥離力を1000mN/50mm以下に容易に設定することが可能になる。
The pressure-sensitive adhesive layer is formed of, for example, an acrylic pressure-sensitive adhesive, a urethane-based pressure-sensitive adhesive, a rubber-based pressure-sensitive adhesive, a silicone-based pressure-sensitive adhesive, etc., and an acrylic pressure-sensitive adhesive is preferable.
Moreover, it is preferable that an adhesive layer is formed from an energy-beam curable adhesive. The pressure-sensitive adhesive layer is formed from an energy-ray curable pressure-sensitive adhesive, so that the elastic modulus at 23 ° C. is set within the above range before curing by irradiation with energy rays, and the peeling force is 1000 mN / 50 mm after curing. It can be easily set as follows.
 以下、粘着剤の具体例について詳述するが、これらは非限定的例示であり、本発明における粘着剤層はこれらに限定的に解釈されるべきではない。
 エネルギー線硬化性粘着剤としては、例えば、非エネルギー線硬化性の粘着性樹脂(「粘着性樹脂I」ともいう)に加え、粘着性樹脂以外のエネルギー線硬化性化合物を含むエネルギー線硬化性粘着剤組成物(以下、「X型の粘着剤組成物」ともいう)が使用可能である。また、エネルギー線硬化性粘着剤として、非エネルギー線硬化性の粘着性樹脂の側鎖に不飽和基を導入したエネルギー線硬化性の粘着性樹脂(以下、「粘着性樹脂II」ともいう)を主成分として含み、粘着性樹脂以外のエネルギー線硬化性化合物を含まない粘着剤組成物(以下、「Y型の粘着剤組成物」ともいう)も使用してもよい。
Hereinafter, although the specific example of an adhesive is explained in full detail, these are non-limiting illustrations, The adhesive layer in this invention should not be limitedly limited to these.
Examples of the energy ray curable adhesive include an energy ray curable adhesive containing an energy ray curable compound other than an adhesive resin in addition to a non-energy ray curable adhesive resin (also referred to as “adhesive resin I”). An agent composition (hereinafter also referred to as “X-type pressure-sensitive adhesive composition”) can be used. In addition, as an energy ray curable adhesive, an energy ray curable adhesive resin having an unsaturated group introduced into the side chain of a non-energy ray curable adhesive resin (hereinafter also referred to as “adhesive resin II”). An adhesive composition that is contained as a main component and does not contain an energy ray curable compound other than an adhesive resin (hereinafter also referred to as “Y-type adhesive composition”) may be used.
 さらに、エネルギー線硬化性粘着剤としては、X型とY型の併用型、すなわち、エネルギー線硬化性の粘着性樹脂IIに加え、粘着性樹脂以外のエネルギー線硬化性化合物も含むエネルギー線硬化性粘着剤組成物(以下、「XY型の粘着剤組成物」ともいう)を使用してもよい。
 これらの中では、XY型の粘着剤組成物を使用することが好ましい。XY型のものを使用することで、硬化前においては十分な粘着特性を有する一方で、硬化後においては、半導体ウエハに対する剥離力を十分に低くすることが可能である。
Furthermore, as the energy ray curable pressure sensitive adhesive, an X ray and Y type combined type, that is, an energy ray curable compound containing an energy ray curable compound other than the adhesive resin in addition to the energy ray curable adhesive resin II. An adhesive composition (hereinafter, also referred to as “XY-type adhesive composition”) may be used.
Among these, it is preferable to use an XY type pressure-sensitive adhesive composition. By using the XY type, it is possible to sufficiently reduce the peeling force on the semiconductor wafer after curing while having sufficient adhesive properties before curing.
 ただし、粘着剤としては、エネルギー線を照射しても硬化しない非エネルギー線硬化性の粘着剤組成物から形成してもよい。非エネルギー線硬化性の粘着剤組成物は、少なくとも非エネルギー線硬化性の粘着性樹脂Iを含有する一方、上記したエネルギー線硬化性の粘着性樹脂II及びエネルギー線硬化性化合物を含有しないものである。 However, the pressure-sensitive adhesive may be formed from a non-energy ray-curable pressure-sensitive adhesive composition that does not cure even when irradiated with energy rays. The non-energy ray curable adhesive composition contains at least the non-energy ray curable adhesive resin I, but does not contain the energy ray curable adhesive resin II and the energy ray curable compound described above. is there.
 なお、以下の説明において“粘着性樹脂”は、上記した粘着性樹脂I及び粘着性樹脂IIの一方又は両方を指す用語として使用する。具体的な粘着性樹脂としては、例えば、アクリル系樹脂、ウレタン系樹脂、ゴム系樹脂、シリコーン系樹脂等が挙げられるが、アクリル系樹脂が好ましい。
 以下、粘着性樹脂として、アクリル系樹脂が使用されるアクリル系粘着剤についてより詳述に説明する。
In the following description, “adhesive resin” is used as a term indicating one or both of the above-described adhesive resin I and adhesive resin II. Specific examples of the adhesive resin include acrylic resins, urethane resins, rubber resins, and silicone resins. Acrylic resins are preferable.
Hereinafter, the acrylic adhesive in which an acrylic resin is used as the adhesive resin will be described in more detail.
 アクリル系樹脂には、アクリル系重合体(b)が使用される。アクリル系重合体(b)は、少なくともアルキル(メタ)アクリレートを含むモノマーを重合して得たものであり、アルキル(メタ)アクリレート由来の構成単位を含む。アルキル(メタ)アクリレートとしては、アルキル基の炭素数が1~20のものが挙げられ、アルキル基は直鎖であってもよいし、分岐であってもよい。アルキル(メタ)アクリレートの具体例としては、メチル(メタ)アクリレート、エチル(メタ)アクリレート、イソプロピル(メタ)アクリレート、n-プロピル(メタ)アクリレート、n-ブチル(メタ)メタクリレート、2-エチルヘキシル(メタ)アクリレート、n-オクチル(メタ)アクリレート、イソオクチル(メタ)アクリレート、ノニル(メタ)アクリレート、デシル(メタ)アクリレート、ウンデシル(メタ)アクリレート、ドデシル(メタ)アクリレート等が挙げられる。アルキル(メタ)アクリレートは、単独で又は2種以上組み合わせて用いてもよい。 An acrylic polymer (b) is used for the acrylic resin. The acrylic polymer (b) is obtained by polymerizing a monomer containing at least an alkyl (meth) acrylate, and includes a structural unit derived from an alkyl (meth) acrylate. Examples of the alkyl (meth) acrylate include those having 1 to 20 carbon atoms in the alkyl group, and the alkyl group may be linear or branched. Specific examples of the alkyl (meth) acrylate include methyl (meth) acrylate, ethyl (meth) acrylate, isopropyl (meth) acrylate, n-propyl (meth) acrylate, n-butyl (meth) methacrylate, 2-ethylhexyl (meth) ) Acrylate, n-octyl (meth) acrylate, isooctyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate, undecyl (meth) acrylate, dodecyl (meth) acrylate and the like. Alkyl (meth) acrylates may be used alone or in combination of two or more.
 また、アクリル系重合体(b)は、粘着剤層の粘着力を向上させる観点から、アルキル基の炭素数が4以上であるアルキル(メタ)アクリレート由来の構成単位を含むことが好ましい。該アルキル(メタ)アクリレートの炭素数としては、好ましくは4~12、更に好ましくは4~6である。また、アルキル基の炭素数が4以上であるアルキル(メタ)アクリレートは、アルキルアクリレートであることが好ましい。 The acrylic polymer (b) preferably contains a structural unit derived from an alkyl (meth) acrylate having an alkyl group with 4 or more carbon atoms from the viewpoint of improving the adhesive strength of the pressure-sensitive adhesive layer. The alkyl (meth) acrylate preferably has 4 to 12 carbon atoms, more preferably 4 to 6 carbon atoms. Moreover, it is preferable that the alkyl (meth) acrylate whose carbon number of an alkyl group is 4 or more is an alkyl acrylate.
 アクリル系重合体(b)において、アルキル基の炭素数が4以上であるアルキル(メタ)アクリレートは、アクリル系重合体(b)を構成するモノマー全量(以下単に“モノマー全量”ともいう)に対して、好ましくは40~98質量%、より好ましくは45~95質量%、更に好ましくは50~90質量%である。 In the acrylic polymer (b), the alkyl (meth) acrylate having an alkyl group having 4 or more carbon atoms is based on the total amount of monomers constituting the acrylic polymer (b) (hereinafter also simply referred to as “monomer total amount”). Thus, it is preferably 40 to 98% by mass, more preferably 45 to 95% by mass, and still more preferably 50 to 90% by mass.
 アクリル系重合体(b)は、アルキル基の炭素数が4以上であるアルキル(メタ)アクレート由来の構成単位に加えて、粘着剤層の弾性率や粘着特性を調整するために、アルキル基の炭素数が1~3であるアルキル(メタ)アクリレート由来の構成単位を含む共重合体であることが好ましい。なお、該アルキル(メタ)アクリレートは、炭素数1又は2のアルキル(メタ)アクリレートであることが好ましく、メチル(メタ)アクリレートがより好ましく、メチルメタクリレートが最も好ましい。アクリル系重合体(b)において、アルキル基の炭素数が1~3であるアルキル(メタ)アクリレートは、モノマー全量に対して、好ましくは1~30質量%、より好ましくは3~26質量%、更に好ましくは6~22質量%である。 In order to adjust the elastic modulus and adhesive properties of the pressure-sensitive adhesive layer in addition to the structural unit derived from alkyl (meth) acrylate having an alkyl group with 4 or more carbon atoms, the acrylic polymer (b) A copolymer containing a structural unit derived from an alkyl (meth) acrylate having 1 to 3 carbon atoms is preferred. The alkyl (meth) acrylate is preferably an alkyl (meth) acrylate having 1 or 2 carbon atoms, more preferably methyl (meth) acrylate, and most preferably methyl methacrylate. In the acrylic polymer (b), the alkyl (meth) acrylate having an alkyl group having 1 to 3 carbon atoms is preferably 1 to 30% by mass, more preferably 3 to 26% by mass, based on the total amount of monomers. More preferably, it is 6 to 22% by mass.
 アクリル系重合体(b)は、上記したアルキル(メタ)アクリレート由来の構成単位に加えて、官能基含有モノマー由来の構成単位を有することが好ましい。官能基含有モノマーの官能基としては、水酸基、カルボキシ基、アミノ基、エポキシ基等が挙げられる。官能基含有モノマーは、後述の架橋剤と反応し、架橋起点となったり、不飽和基含有化合物と反応して、アクリル系重合体(b)の側鎖に不飽和基を導入させたりすることが可能である。 The acrylic polymer (b) preferably has a structural unit derived from a functional group-containing monomer in addition to the structural unit derived from the alkyl (meth) acrylate. Examples of the functional group of the functional group-containing monomer include a hydroxyl group, a carboxy group, an amino group, and an epoxy group. The functional group-containing monomer reacts with a crosslinking agent described later to become a crosslinking starting point, or reacts with an unsaturated group-containing compound to introduce an unsaturated group into the side chain of the acrylic polymer (b). Is possible.
 官能基含有モノマーとしては、水酸基含有モノマー、カルボキシ基含有モノマー、アミノ基含有モノマー、エポキシ基含有モノマー等が挙げられる。これらのモノマーは、単独で又は2種以上組み合わせて用いてもよい。これらの中でも、水酸基含有モノマー、カルボキシ基含有モノマーが好ましく、水酸基含有モノマーがより好ましい。 Examples of the functional group-containing monomer include a hydroxyl group-containing monomer, a carboxy group-containing monomer, an amino group-containing monomer, and an epoxy group-containing monomer. These monomers may be used alone or in combination of two or more. Among these, a hydroxyl group-containing monomer and a carboxy group-containing monomer are preferable, and a hydroxyl group-containing monomer is more preferable.
 水酸基含有モノマーとしては、例えば、2-ヒドロキシエチル(メタ)アクリレート、2-ヒドロキシプロピル(メタ)アクリレート、3-ヒドロキシプロピル(メタ)アクリレート、2-ヒドロキシブチル(メタ)アクリレート、3-ヒドロキシブチル(メタ)アクリレート、4-ヒドロキシブチル(メタ)アクリレート等のヒドロキシアルキル(メタ)アクリレート;ビニルアルコール、アリルアルコール等の不飽和アルコール等が挙げられる。 Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, and 3-hydroxybutyl (meth) ) Acrylates, hydroxyalkyl (meth) acrylates such as 4-hydroxybutyl (meth) acrylate, and unsaturated alcohols such as vinyl alcohol and allyl alcohol.
 カルボキシ基含有モノマーとしては、例えば、(メタ)アクリル酸、クロトン酸等のエチレン性不飽和モノカルボン酸;フマル酸、イタコン酸、マレイン酸、シトラコン酸等のエチレン性不飽和ジカルボン酸及びその無水物、2-カルボキシエチルメタクリレート等が挙げられる。 Examples of the carboxy group-containing monomer include ethylenically unsaturated monocarboxylic acids such as (meth) acrylic acid and crotonic acid; ethylenically unsaturated dicarboxylic acids such as fumaric acid, itaconic acid, maleic acid and citraconic acid, and anhydrides thereof. , 2-carboxyethyl methacrylate and the like.
 官能基モノマーは、アクリル系重合体(b)を構成するモノマー全量に対して、好ましくは1~35質量%、より好ましくは3~32質量%、更に好ましくは6~30質量%である。
 また、アクリル系重合体(b)は、上記以外にも、スチレン、α-メチルスチレン、ビニルトルエン、蟻酸ビニル、酢酸ビニル、アクリロニトリル、アクリルアミド等の上記のアクリル系モノマーと共重合可能なモノマー由来の構成単位を含んでもよい。
The functional group monomer is preferably 1 to 35% by mass, more preferably 3 to 32% by mass, and still more preferably 6 to 30% by mass, based on the total amount of monomers constituting the acrylic polymer (b).
In addition to the above, the acrylic polymer (b) is derived from a monomer copolymerizable with the above acrylic monomers such as styrene, α-methylstyrene, vinyl toluene, vinyl formate, vinyl acetate, acrylonitrile, acrylamide and the like. A structural unit may be included.
 上記アクリル系重合体(b)は、非エネルギー線硬化性の粘着性樹脂I(アクリル系樹脂)として使用することができる。また、エネルギー線硬化性のアクリル系樹脂としては、上記アクリル系重合体(b)の官能基に、光重合性不飽和基を有する化合物(不飽和基含有化合物ともいう)を反応させたものが挙げられる。 The acrylic polymer (b) can be used as a non-energy ray curable adhesive resin I (acrylic resin). In addition, as the energy ray-curable acrylic resin, a resin obtained by reacting a functional group of the acrylic polymer (b) with a compound having a photopolymerizable unsaturated group (also referred to as an unsaturated group-containing compound). Can be mentioned.
 不飽和基含有化合物は、アクリル系重合体(b)の官能基と結合可能な置換基、及び光重合性不飽和基の双方を有する化合物である。光重合性不飽和基としては、(メタ)アクリロイル基、ビニル基、アリル基等が挙げられるが、(メタ)アクリロイル基が好ましい。
 また、不飽和基含有化合物が有する、官能基と結合可能な置換基としては、イソシアネート基やグリシジル基等が挙げられる。したがって、不飽和基含有化合物としては、例えば、(メタ)アクリロイルオキシエチルイソシアネート、(メタ)アクリロイルイソシアネート、グリシジル(メタ)アクリレート等が挙げられる。
An unsaturated group containing compound is a compound which has both the substituent which can be couple | bonded with the functional group of an acrylic polymer (b), and a photopolymerizable unsaturated group. Examples of the photopolymerizable unsaturated group include a (meth) acryloyl group, a vinyl group, and an allyl group, and a (meth) acryloyl group is preferable.
Examples of the substituent that the unsaturated group-containing compound can bind to the functional group include an isocyanate group and a glycidyl group. Therefore, examples of the unsaturated group-containing compound include (meth) acryloyloxyethyl isocyanate, (meth) acryloyl isocyanate, glycidyl (meth) acrylate, and the like.
 また、不飽和基含有化合物は、アクリル系重合体(b)の官能基の一部に反応することが好ましく、具体的には、アクリル系重合体(b)が有する官能基の50~98モル%に、不飽和基含有化合物を反応させることが好ましく、55~93モル%反応させることがより好ましい。このように、エネルギー線硬化性アクリル系樹脂において、官能基の一部が不飽和基含有化合物と反応せずに残存することで、架橋剤によって架橋されやすくなる。
 なお、アクリル系樹脂の重量平均分子量(Mw)は、好ましくは30万~160万、より好ましくは40万~140万、更に好ましくは50万~120万である。
In addition, the unsaturated group-containing compound preferably reacts with a part of the functional group of the acrylic polymer (b), specifically, 50 to 98 mol of the functional group of the acrylic polymer (b). % Is preferably reacted with an unsaturated group-containing compound, more preferably 55 to 93 mol%. As described above, in the energy ray-curable acrylic resin, a part of the functional group remains without reacting with the unsaturated group-containing compound, so that it is easily cross-linked by the cross-linking agent.
The weight average molecular weight (Mw) of the acrylic resin is preferably 300,000 to 1,600,000, more preferably 400,000 to 1,400,000, still more preferably 500,000 to 1,200,000.
(エネルギー線硬化性化合物)
 X型又はXY型の粘着剤組成物に含有されるエネルギー線硬化性化合物としては、分子内に不飽和基を有し、エネルギー線照射により重合硬化可能なモノマー又はオリゴマーが好ましい。
 このようなエネルギー線硬化性化合物としては、例えば、トリメチロールプロパントリ(メタ)アクリレート、ペンタエリスリトール(メタ)アクリレート、ペンタエリスリトールテトラ(メタ)アクリレート、ジペンタエリスリトールヘキサ(メタ)アクリレート、1,4-ブチレングリコールジ(メタ)アクリレート、1,6-へキサンジオール(メタ)アクリレート等の多価(メタ)アクリレートモノマー、ウレタン(メタ)アクリレート、ポリエステル(メタ)アクリレート,ポリエーテル(メタ)アクリレート、エポキシ(メタ)アクリレート等のオリゴマーが挙げられる。
(Energy ray curable compound)
The energy ray-curable compound contained in the X-type or XY-type pressure-sensitive adhesive composition is preferably a monomer or oligomer having an unsaturated group in the molecule and capable of being polymerized and cured by irradiation with energy rays.
Examples of such energy ray curable compounds include trimethylolpropane tri (meth) acrylate, pentaerythritol (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4- Polyvalent (meth) acrylate monomers such as butylene glycol di (meth) acrylate, 1,6-hexanediol (meth) acrylate, urethane (meth) acrylate, polyester (meth) acrylate, polyether (meth) acrylate, epoxy ( And oligomers such as (meth) acrylate.
 これらの中でも、比較的分子量が高く、粘着剤層の弾性率を低下させにくい観点から、ウレタン(メタ)アクリレートオリゴマーが好ましい。
 エネルギー線硬化性化合物の分子量(オリゴマーの場合は重量平均分子量)は、好ましくは100~12000、より好ましくは200~10000、更に好ましくは400~8000、特に好ましくは600~6000である。
Among these, urethane (meth) acrylate oligomers are preferable from the viewpoint of relatively high molecular weight and difficulty in reducing the elastic modulus of the pressure-sensitive adhesive layer.
The molecular weight of the energy ray-curable compound (weight average molecular weight in the case of an oligomer) is preferably 100 to 12000, more preferably 200 to 10,000, still more preferably 400 to 8000, and particularly preferably 600 to 6000.
 X型の粘着剤組成物におけるエネルギー線硬化性化合物の含有量は、粘着性樹脂100質量部に対して、好ましくは40~200質量部、より好ましくは50~150質量部、更に好ましくは60~90質量部である。
 一方で、XY型の粘着剤組成物におけるエネルギー線硬化性化合物の含有量は、粘着性樹脂100質量部に対して、好ましくは1~30質量部、より好ましくは2~20質量部、更に好ましくは3~15質量部である。XY型の粘着剤組成物では、粘着性樹脂が、エネルギー線硬化性であるため、エネルギー線硬化性化合物の含有量が少なくても、エネルギー線照射後、十分に剥離力を低下させることが可能である。
The content of the energy ray curable compound in the X-type pressure-sensitive adhesive composition is preferably 40 to 200 parts by mass, more preferably 50 to 150 parts by mass, and still more preferably 60 to 100 parts by mass with respect to 100 parts by mass of the adhesive resin. 90 parts by mass.
On the other hand, the content of the energy ray-curable compound in the XY-type pressure-sensitive adhesive composition is preferably 1 to 30 parts by mass, more preferably 2 to 20 parts by mass, and still more preferably based on 100 parts by mass of the adhesive resin. Is 3 to 15 parts by mass. In the XY-type pressure-sensitive adhesive composition, the adhesive resin is energy ray curable, so even if the content of the energy ray curable compound is small, it is possible to sufficiently reduce the peeling force after irradiation with energy rays. It is.
(架橋剤)
 粘着剤組成物は、さらに架橋剤を含有することが好ましい。架橋剤は、例えば粘着性樹脂が有する官能基モノマー由来の官能基に反応して、粘着性樹脂同士を架橋するものである。架橋剤としては、例えば、トリレンジイソシアネート、ヘキサメチレンジイソシアネート等、及びそれらのアダクト体等のイソシアネート系架橋剤;エチレングリコールグリシジルエーテル、1,3-ビス(N,N’-ジグリシジルアミノメチル)シクロヘキサン等のエポキシ系架橋剤;ヘキサ〔1-(2-メチル)-アジリジニル〕トリフォスファトリアジン等のアジリジン系架橋剤;アルミニウムキレート等のキレート系架橋剤;等が挙げられる。これらの架橋剤は、単独で又は2種以上を組み合わせて用いてもよい。
(Crosslinking agent)
The pressure-sensitive adhesive composition preferably further contains a crosslinking agent. A crosslinking agent reacts with the functional group derived from the functional group monomer which adhesive resin has, for example, and bridge | crosslinks adhesive resins. Examples of the crosslinking agent include isocyanate-based crosslinking agents such as tolylene diisocyanate, hexamethylene diisocyanate, and adducts thereof; ethylene glycol glycidyl ether, 1,3-bis (N, N′-diglycidylaminomethyl) cyclohexane Epoxy crosslinking agents such as hexa [1- (2-methyl) -aziridinyl] triphosphatriazine and the like; chelating crosslinking agents such as aluminum chelates; and the like. These crosslinking agents may be used alone or in combination of two or more.
 これらの中でも、凝集力を高めて粘着力を向上させる観点、及び入手し易さ等の観点から、イソシアネート系架橋剤が好ましい。
 架橋剤の配合量は、架橋反応を促進させる観点から、粘着性樹脂100質量部に対して、好ましくは0.01~10質量部、より好ましくは0.03~7質量部、更に好ましくは0.05~4質量部である。
Among these, an isocyanate-based crosslinking agent is preferable from the viewpoints of increasing cohesive force and improving adhesive force, and availability.
The blending amount of the crosslinking agent is preferably 0.01 to 10 parts by mass, more preferably 0.03 to 7 parts by mass, and still more preferably 0 with respect to 100 parts by mass of the adhesive resin from the viewpoint of promoting the crosslinking reaction. .05 to 4 parts by mass.
(光重合開始剤)
 また、粘着剤組成物がエネルギー線硬化性である場合には、粘着剤組成物は、さらに光重合開始剤を含有することが好ましい。光重合開始剤を含有することで、紫外線等の比較的低エネルギーのエネルギー線でも、粘着剤組成物の硬化反応を十分に進行させることができる。
(Photopolymerization initiator)
Moreover, when an adhesive composition is energy-beam curable, it is preferable that an adhesive composition contains a photoinitiator further. By containing the photopolymerization initiator, the curing reaction of the pressure-sensitive adhesive composition can sufficiently proceed even with relatively low energy energy rays such as ultraviolet rays.
 光重合開始剤としては、例えば、ベンゾイン化合物、アセトフェノン化合物、アシルフォスフィノキサイド化合物、チタノセン化合物、チオキサントン化合物、パーオキサイド化合物、さらには、アミンやキノン等の光増感剤等が挙げられ、より具体的には、例えば、1-ヒドロキシシクロへキシルフェニルケトン、2-ヒドロキシ-2-メチル-1-フェニル-プロパン-1-オン、ベンゾイン、ベンゾインメチルエーテル、ベンゾインエチルエーテル、ベンゾインイソプロピルエーテル、ベンジルフェニルサルファイド、テトラメチルチウラムモノサルファイド、アゾビスイソブチロルニトリル、ジベンジル、ジアセチル、8-クロールアンスラキノン、ビス(2,4,6-トリメチルベンゾイル)フェニルフォスフィンオキシド等が挙げられる。 Examples of the photopolymerization initiator include benzoin compounds, acetophenone compounds, acylphosphinoxide compounds, titanocene compounds, thioxanthone compounds, peroxide compounds, and photosensitizers such as amines and quinones. Specifically, for example, 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzylphenyl Such as sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, dibenzyl, diacetyl, 8-chloroanthraquinone, bis (2,4,6-trimethylbenzoyl) phenylphosphine oxide, etc. It is below.
 これらの光重合開始剤は、単独で又は2種以上を組み合わせて用いてもよい。
 光重合開始剤の配合量は、粘着性樹脂100質量部に対して、好ましくは0.01~10質量部、より好ましくは0.03~5質量部、更に好ましくは0.05~5質量部である。
These photopolymerization initiators may be used alone or in combination of two or more.
The blending amount of the photopolymerization initiator is preferably 0.01 to 10 parts by weight, more preferably 0.03 to 5 parts by weight, still more preferably 0.05 to 5 parts by weight with respect to 100 parts by weight of the adhesive resin. It is.
(その他の添加剤)
 粘着剤組成物は、本発明の効果を損なわない範囲において、その他の添加剤を含有してもよい。その他の添加剤としては、例えば、帯電防止剤、酸化防止剤、粘着付与剤、軟化剤(可塑剤)、充填剤、防錆剤、顔料、染料等が挙げられる。これらの添加剤を配合する場合、添加剤の配合量は、粘着性樹脂100質量部に対して、好ましくは0.01~6質量部である。
(Other additives)
The pressure-sensitive adhesive composition may contain other additives as long as the effects of the present invention are not impaired. Examples of other additives include antistatic agents, antioxidants, tackifiers, softeners (plasticizers), fillers, rust inhibitors, pigments, dyes, and the like. When these additives are blended, the amount of the additives is preferably 0.01 to 6 parts by mass with respect to 100 parts by mass of the adhesive resin.
 また、粘着剤組成物は、基材や剥離シートへの塗布性を向上させる観点から、更に有機溶媒で希釈して、粘着剤組成物の溶液の形態としてもよい。
 有機溶媒としては、例えば、メチルエチルケトン、アセトン、酢酸エチル、テトラヒドロフラン、ジオキサン、シクロヘキサン、n-ヘキサン、トルエン、キシレン、n-プロパノール、イソプロパノール等が挙げられる。
 なお、これらの有機溶媒は、粘着性樹脂の合成時に使用された有機溶媒をそのまま用いてもよいし、該粘着剤組成物の溶液を均一に塗布できるように、合成時に使用された有機溶媒以外の1種以上の有機溶媒を加えてもよい。
Further, the pressure-sensitive adhesive composition may be further diluted with an organic solvent from the viewpoint of improving applicability to a substrate or a release sheet, and may be in the form of a solution of the pressure-sensitive adhesive composition.
Examples of the organic solvent include methyl ethyl ketone, acetone, ethyl acetate, tetrahydrofuran, dioxane, cyclohexane, n-hexane, toluene, xylene, n-propanol, isopropanol and the like.
As these organic solvents, the organic solvent used at the time of the synthesis of the adhesive resin may be used as it is, or other than the organic solvent used at the time of synthesis so that the solution of the pressure-sensitive adhesive composition can be uniformly applied. One or more organic solvents may be added.
[剥離シート]
 粘着テープの表面には、剥離シートが貼付されていてもよい。剥離シートは、具体的には、粘着テープの粘着剤層の表面に貼付される。剥離シートは、粘着剤層表面に貼付されることで輸送時、保管時に粘着剤層を保護する。剥離シートは、剥離可能に粘着テープに貼付されており、粘着テープが使用される前(すなわち、ウエハ裏面研削前)には、粘着テープから剥離されて取り除かれる。
 剥離シートは、少なくとも一方の面が剥離処理をされた剥離シートが用いられ、具体的には、剥離シート用基材の表面上に剥離剤を塗布したもの等が挙げられる。
[Peeling sheet]
A release sheet may be attached to the surface of the adhesive tape. Specifically, the release sheet is attached to the surface of the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape. The release sheet is attached to the surface of the pressure-sensitive adhesive layer to protect the pressure-sensitive adhesive layer during transportation and storage. The release sheet is detachably attached to the adhesive tape, and is peeled off and removed from the adhesive tape before the adhesive tape is used (that is, before grinding the wafer back surface).
As the release sheet, a release sheet having at least one surface subjected to a release treatment is used, and specifically, a release sheet coated on the surface of the release sheet substrate may be used.
 剥離シート用基材としては、樹脂フィルムが好ましく、当該樹脂フィルムを構成する樹脂としては、例えば、ポリエチレンテレフタレート樹脂、ポリブチレンテレフタレート樹脂、ポリエチレンナフタレート樹脂等のポリエステル樹脂フィルム、ポリプロピレン樹脂、ポリエチレン樹脂等のポリオレフィン樹脂等が挙げられる。剥離剤としては、例えば、シリコーン系樹脂、オレフィン系樹脂、イソプレン系樹脂、ブタジエン系樹脂等のゴム系エラストマー、長鎖アルキル系樹脂、アルキド系樹脂、フッ素系樹脂等が挙げられる。
 剥離シートの厚さは、特に制限ないが、好ましくは10~200μm、より好ましくは20~150μmである。
As the base for the release sheet, a resin film is preferable, and examples of the resin constituting the resin film include polyester resin films such as polyethylene terephthalate resin, polybutylene terephthalate resin, and polyethylene naphthalate resin, polypropylene resin, polyethylene resin, and the like. Polyolefin resin and the like. Examples of the release agent include rubber elastomers such as silicone resins, olefin resins, isoprene resins, and butadiene resins, long chain alkyl resins, alkyd resins, and fluorine resins.
The thickness of the release sheet is not particularly limited, but is preferably 10 to 200 μm, more preferably 20 to 150 μm.
[粘着テープ]
 本発明に係る粘着テープ10は、基材11と、粘着剤層12とを含む。図2を参照して、本発明における「浮き量」について説明する。
 本発明の粘着テープを直径20.32cm(8インチ)の円形に切り出し、粘着剤層面を上に向けて、23℃50%RHで30分間平坦面に静置後の、粘着テープ外周部の平坦面からの浮き量の最大値は、6mm以下であり、好ましくは5mm以下、さらに好ましくは4mm以下である。浮き量の最大値(L)は0mmであってもよく、より好ましい。浮き量の最大値は0.1mm以上であってもよく、0.3mm以上であってもよく、0.5mm以上であってもよい。
[Adhesive tape]
The pressure-sensitive adhesive tape 10 according to the present invention includes a base material 11 and a pressure-sensitive adhesive layer 12. The “floating amount” in the present invention will be described with reference to FIG.
The pressure-sensitive adhesive tape of the present invention is cut out into a circular shape having a diameter of 20.32 cm (8 inches), and the pressure-sensitive adhesive layer is flattened on the flat surface at 23 ° C. and 50% RH for 30 minutes with the pressure-sensitive adhesive layer surface facing up. The maximum value of the floating amount from the surface is 6 mm or less, preferably 5 mm or less, more preferably 4 mm or less. The maximum value (L) of the floating amount may be 0 mm, and is more preferable. The maximum value of the floating amount may be 0.1 mm or more, 0.3 mm or more, or 0.5 mm or more.
 基材11には一般に製膜時のテンションが残留している。また、粘着テープは一般にロール状に巻かれて保管、搬送されるが、この際に巻癖が付く。このため粘着テープをロールから巻き出し、円形に切り出した後、平坦面に静置すると粘着テープが湾曲する。この湾曲には2通りのタイプがある。ひとつは、円形の粘着テープの外周部が平坦面から浮くタイプであり、以下ではこれを凹状変形と呼ぶ。他のひとつは、粘着テープの内周部が平坦面から浮くタイプであり、以下ではこれを凸状変形と呼ぶ。図2には凹状変形の一例を示している。 The substrate 11 generally retains tension during film formation. Moreover, although an adhesive tape is generally wound and stored and conveyed by roll shape, a curl is attached at this time. For this reason, after the adhesive tape is unwound from the roll and cut out into a circular shape, the adhesive tape curves when left on a flat surface. There are two types of curvature. One is a type in which the outer peripheral portion of a circular adhesive tape floats from a flat surface, and this is hereinafter referred to as concave deformation. The other one is a type in which the inner peripheral portion of the adhesive tape floats from a flat surface, which is hereinafter referred to as convex deformation. FIG. 2 shows an example of a concave deformation.
 本発明の粘着テープでは、浮き量の最大値が0mmであっても良い。これは、粘着テープがまったく湾曲しないか、あるいは凸状変形の場合を意味する。凸状変形の場合には、粘着テープの外周部は平坦面に接地するため、浮き量の最大値は0mmとなる。平坦面に対し凸状に湾曲することで、吸着テーブルの平坦面と粘着テープとの間で気密性が保たれ、ドライポリッシュ時に、粘着テープを吸着テーブルに吸着する際のエア漏れが防止される。このため、粘着テープ上のチップ集合体が平坦に保持されるため、研磨パフの研磨面がチップの裏面側に確実に接触するため、チップの破損、飛散が低減される。 In the pressure-sensitive adhesive tape of the present invention, the maximum value of the floating amount may be 0 mm. This means that the adhesive tape is not curved at all or has a convex deformation. In the case of convex deformation, since the outer peripheral portion of the adhesive tape is grounded on a flat surface, the maximum value of the floating amount is 0 mm. By curving in a convex shape with respect to the flat surface, airtightness is maintained between the flat surface of the suction table and the adhesive tape, and air leakage when adhering the adhesive tape to the suction table during dry polishing is prevented. . For this reason, since the chip aggregate on the pressure-sensitive adhesive tape is held flat, the polishing surface of the polishing puff is surely in contact with the back surface side of the chip, so that chip breakage and scattering are reduced.
 また、粘着テープが凹状変形する場合であっても、浮き量の最大値が6mm以下であれば、吸着テーブルの吸引力によって、粘着テープの外周部が吸着テーブルに密着するため、上記と同様にチップの破損、飛散が低減される。また、粘着テープの外周部が浮いていても、研磨パフがチップ上を通過する際に、粘着テープが吸着テーブルに押し付けられるため、粘着テープの外周部が吸着テーブルに密着する。これにより、粘着テープが貼付されたチップ集合体の平坦性が確保され、チップの破損、飛散が低減される。 Even when the adhesive tape deforms in a concave shape, if the maximum value of the floating amount is 6 mm or less, the outer peripheral portion of the adhesive tape is brought into close contact with the suction table by the suction force of the suction table. Chip breakage and scattering are reduced. Even if the outer peripheral portion of the adhesive tape is floating, the adhesive tape is pressed against the suction table when the polishing puff passes over the chip, so that the outer peripheral portion of the adhesive tape is in close contact with the suction table. Thereby, the flatness of the chip assembly to which the adhesive tape is affixed is ensured, and chip breakage and scattering are reduced.
 一方、浮き量の最大値が6mmを超えると、粘着シートの外縁近傍に保持されているチップは傾く。傾いたチップに対して、研磨パフの側面が接触し、チップが破損、飛散することがある。 On the other hand, when the maximum value of the floating amount exceeds 6 mm, the chip held near the outer edge of the adhesive sheet is inclined. The side surface of the polishing puff may come into contact with the tilted chip, and the chip may be damaged or scattered.
 浮き量の最大値は、粘着テープを直径20.32cm(8インチ)の円形に切り出し、剥離シートを剥がした後、粘着剤層面を上に向けて、23℃50%RHで30分間平坦面に静置後に、23℃50%RHにて測定する。粘着テープの切り出し後、平坦面に静置すると、粘着テープは徐々に湾曲し、30分でほぼ定常状態となる。30分経過後、平坦面に定規を立て、粘着テープの外周部に沿って定規を一周させ、各部位における浮き量を測定し、その最大値を求める。 The maximum value of the floating amount is that the pressure-sensitive adhesive tape is cut into a circular shape having a diameter of 20.32 cm (8 inches), the release sheet is peeled off, and then the pressure-sensitive adhesive layer surface is faced up and flattened at 23 ° C. and 50% RH for 30 minutes After standing, it is measured at 23 ° C. and 50% RH. After cutting out the adhesive tape, if it is allowed to stand on a flat surface, the adhesive tape is gradually curved and becomes almost steady in 30 minutes. After 30 minutes, a ruler is set on the flat surface, the ruler is made to circulate along the outer periphery of the adhesive tape, the amount of floating at each part is measured, and the maximum value is obtained.
 上記の粘着テープの作成法は特に限定はされないが、たとえば以下のように基材の湾曲性を評価した上で、基材の片面に粘着剤層を設けることで得られる。 The method for producing the above-mentioned pressure-sensitive adhesive tape is not particularly limited. For example, the pressure-sensitive adhesive tape can be obtained by providing a pressure-sensitive adhesive layer on one side of the substrate after evaluating the curvature of the substrate as follows.
 まず、基材の一方の面を第1面とし、他方の面を第2面とする。直径20.32cmに切り出した基材を、第1面が上面、第2面が下面となるように、平坦面に30分静置する。基材に変形が見られない場合あるいは、基材外周の浮き量の最大値が6mm以下の場合には、何れの面に粘着剤層を設けても良い。基材が凸状変形した場合には、第1面側に粘着剤層を設ける。基材が凹状変形した場合には、第2面側に粘着剤層を設ける。 First, one surface of the base material is a first surface and the other surface is a second surface. The base material cut out to a diameter of 20.32 cm is allowed to stand on a flat surface for 30 minutes so that the first surface is the upper surface and the second surface is the lower surface. In the case where no deformation is observed in the base material or the maximum floating amount on the outer periphery of the base material is 6 mm or less, an adhesive layer may be provided on any surface. When the substrate is deformed in a convex shape, an adhesive layer is provided on the first surface side. When the substrate is deformed in a concave shape, an adhesive layer is provided on the second surface side.
 基材の湾曲性は、例えば基材の厚みや、緩衝層によって制御できる。基材を比較的厚めにすると、基材の剛性によって、湾曲性が低くなる。また、緩衝層を設ける場合には、基材の両面に緩衝層を設けることが好ましい。基材の片面のみに緩衝層を設けると、基材の内部応力と、緩衝層の内部応力との違いによって、積層基材が湾曲し易い。しかし、基材の両面に緩衝層を設けると、片方の緩衝層の内部応力による湾曲性と、他方の緩衝層の内部応力による湾曲性とが互いに打消すため、積層基材の湾曲性は低くなる。したがって、基材の両面に緩衝層を設ける場合には、両面に同一の緩衝層を設けることが好ましい。 The curvature of the substrate can be controlled by, for example, the thickness of the substrate or the buffer layer. When the base material is made relatively thick, the curvature becomes low due to the rigidity of the base material. Moreover, when providing a buffer layer, it is preferable to provide a buffer layer on both surfaces of a base material. When the buffer layer is provided only on one surface of the base material, the laminated base material is easily bent due to the difference between the internal stress of the base material and the internal stress of the buffer layer. However, if buffer layers are provided on both sides of the base material, the curvature of one buffer layer and the curvature of the other buffer layer due to internal stress cancel each other, so the laminated base material has low curvature. Become. Therefore, when providing a buffer layer on both surfaces of a base material, it is preferable to provide the same buffer layer on both surfaces.
(粘着テープ10の製造方法)
 本発明の粘着テープ10の製造方法としては、特に制限はなく、公知の方法により製造することができる。
 例えば、剥離シート上に設けた粘着剤層を、基材の片面(または緩衝層)に貼り合わせ、粘着剤層の表面に剥離シートが貼付された粘着テープを製造することができる。粘着剤層の表面に貼付される剥離シートは、粘着テープの使用前に適宜剥離して除去すればよい。
 剥離シート上に粘着剤層を形成する方法としては、剥離シート上に粘着剤組成物を、公知の塗布方法にて、直接塗布して塗布膜から溶媒を揮発させるため加熱乾燥することで、粘着剤層を形成することができる。
(Method for producing adhesive tape 10)
There is no restriction | limiting in particular as a manufacturing method of the adhesive tape 10 of this invention, It can manufacture by a well-known method.
For example, the pressure-sensitive adhesive layer provided on the release sheet can be bonded to one side (or buffer layer) of the substrate, and a pressure-sensitive adhesive tape having the release sheet attached to the surface of the pressure-sensitive adhesive layer can be produced. The release sheet attached to the surface of the pressure-sensitive adhesive layer may be appropriately peeled and removed before using the pressure-sensitive adhesive tape.
As a method of forming the pressure-sensitive adhesive layer on the release sheet, the pressure-sensitive adhesive composition is directly applied on the release sheet by a known coating method, and is heated and dried to volatilize the solvent from the coating film. An agent layer can be formed.
 また、基材の片面(または緩衝層)に、粘着剤(粘着剤組成物)を直接塗布して、粘着剤層を形成してもよい。粘着剤の塗布方法としては、スピンコート法、スプレーコート法、バーコート法、ナイフコート法、ロールコート法、ブレードコート法、ダイコート法、グラビアコート法等が挙げられる。 Further, the pressure-sensitive adhesive layer may be formed by directly applying a pressure-sensitive adhesive (pressure-sensitive adhesive composition) to one side (or buffer layer) of the substrate. Examples of the method for applying the adhesive include spin coating, spray coating, bar coating, knife coating, roll coating, blade coating, die coating, and gravure coating.
[半導体装置の製造方法]
 本発明の粘着テープ10は、先ダイシング法において、半導体ウエハ回路面を保護しつつ、裏面研削が行い、かつドライポリッシュを行う際に、ウエハ回路面に貼付されるバックグラインドテープとして使用される。バックグラインドテープとしての使用例について、さらに具体的に説明する。
[Method for Manufacturing Semiconductor Device]
The pressure-sensitive adhesive tape 10 of the present invention is used as a back grind tape to be attached to a wafer circuit surface when performing backside grinding and dry polishing while protecting the semiconductor wafer circuit surface in the tip dicing method. An example of use as a back grind tape will be described more specifically.
 半導体装置の製造方法は、具体的には、以下の工程1~工程4を少なくとも備える。
工程1:半導体ウエハの表面側から溝を形成する工程
工程2:上記の粘着テープ10(バックグラインドテープ)を、半導体ウエハの表面に貼付する工程
工程3:粘着テープ10が表面に貼付され、かつ上記溝が形成された半導体ウエハを、裏面側から研削して、溝の底部を除去して、複数のチップに個片化させ、さらにドライポリッシュを行う工程
工程4:チップ集合体を、ピックアップテープに転写し、バックグラインドテープを剥離した後、ピックアップテープから個々のチップを剥離する工程
Specifically, the semiconductor device manufacturing method includes at least the following steps 1 to 4.
Step 1: Step of forming grooves from the surface side of the semiconductor wafer Step 2: Step of applying the above adhesive tape 10 (back grind tape) to the surface of the semiconductor wafer Step 3: Adhesive tape 10 is applied to the surface, and The semiconductor wafer on which the groove is formed is ground from the back surface side, the bottom of the groove is removed, the chip is separated into a plurality of chips, and further dry polishing is performed. The process of peeling individual chips from the pick-up tape after the back-grind tape is peeled off
 以下、上記半導体装置の製造方法の各工程を詳細に説明する。
(工程1)
 工程1では、半導体ウエハの表面側から溝を形成する。
 本工程で形成される溝は、半導体ウエハの厚さより浅い深さの溝である。溝の形成は、従来公知のウエハダイシング装置等を用いて行うことが可能である。また、半導体ウエハは、後述する工程3において、溝の底部を除去することで、溝に沿って複数の半導体チップに分割される。
Hereafter, each process of the manufacturing method of the said semiconductor device is demonstrated in detail.
(Process 1)
In step 1, a groove is formed from the surface side of the semiconductor wafer.
The groove formed in this step is a groove having a depth shallower than the thickness of the semiconductor wafer. The groove can be formed using a conventionally known wafer dicing apparatus or the like. Further, the semiconductor wafer is divided into a plurality of semiconductor chips along the groove by removing the bottom of the groove in step 3 described later.
 本製造方法で用いられる半導体ウエハはシリコンウエハであってもよいし、またガリウム・砒素などのウエハや、サファイアウエハ、ガラスウエハであってもよい。半導体ウエハの研削前の厚さは特に限定されないが、通常は500~1000μm程度である。また、半導体ウエハは、通常、その表面に回路が形成されている。ウエハ表面への回路の形成は、エッチング法、リフトオフ法などの従来汎用されている方法を含む様々な方法により行うことができる。 The semiconductor wafer used in the present manufacturing method may be a silicon wafer, a gallium / arsenic wafer, a sapphire wafer, or a glass wafer. The thickness of the semiconductor wafer before grinding is not particularly limited, but is usually about 500 to 1000 μm. A semiconductor wafer usually has a circuit formed on the surface thereof. Formation of the circuit on the wafer surface can be performed by various methods including conventionally used methods such as an etching method and a lift-off method.
(工程2)
 工程2では、溝が形成された半導体ウエハ表面に、本発明の粘着テープ10の粘着剤層12を貼付する。
(Process 2)
In step 2, the pressure-sensitive adhesive layer 12 of the pressure-sensitive adhesive tape 10 of the present invention is attached to the surface of the semiconductor wafer on which the grooves are formed.
(工程3)
 工程1及び工程2の後、吸着テーブル上の半導体ウエハの裏面を研削して、半導体ウエハを複数の半導体チップに個片化し、さらにドライポリッシュを行う。
 ここで、裏面研削は、半導体ウエハの表面に形成された溝の底部に至る位置まで半導体ウエハを薄くするように行う。この裏面研削により、溝は、ウエハを貫通する切り込みとなり、半導体ウエハは切り込みにより分割されて、個々の半導体チップに個片化される。ドライポリッシュとは、水や砥粒のスラリーを用いずに研磨パフにより研磨する工程を意味する。研磨パフとしては各種汎用の研磨パフが用いられ、市販品としては、ディスコ社の研磨ホイール「Gettering DP」や、「DP08 SERIES」が用いられるが、これらに限定さ
れない。ドライポリッシュによりチップのダメージ部、すなわち研削痕を除去することで、チップの抗折強度は向上する。
(Process 3)
After step 1 and step 2, the back surface of the semiconductor wafer on the suction table is ground to divide the semiconductor wafer into a plurality of semiconductor chips, and dry polishing is performed.
Here, the back surface grinding is performed so that the semiconductor wafer is thinned to the position reaching the bottom of the groove formed on the surface of the semiconductor wafer. By this back surface grinding, the groove becomes a notch penetrating the wafer, and the semiconductor wafer is divided by the notch and separated into individual semiconductor chips. Dry polishing means a process of polishing with a polishing puff without using water or abrasive slurry. As the polishing puff, various general-purpose polishing puffs are used, and as a commercial product, a polishing wheel “Gettering DP” or “DP08 SERIES” manufactured by Disco Corporation is used, but is not limited thereto. By removing the damaged portion of the chip, that is, the grinding mark by dry polishing, the bending strength of the chip is improved.
 個片化された半導体チップの形状は、方形でもよいし、矩形等の細長形状となっていてもよい。また、個片化された半導体チップの厚さは特に限定されないが、好ましくは5~100μm程度であるが、より好ましくは10~45μmである。また、個片化された半導体チップの大きさは、特に限定されないが、チップサイズが好ましくは200mm未満、より好ましくは150mm未満、さらに好ましくは120mm未満である。 The shape of the separated semiconductor chip may be a square or may be an elongated shape such as a rectangle. The thickness of the individual semiconductor chip is not particularly limited, but is preferably about 5 to 100 μm, more preferably 10 to 45 μm. The size of the individual semiconductor chip is not particularly limited, but the chip size is preferably less than 200 mm 2 , more preferably less than 150 mm 2 , and even more preferably less than 120 mm 2 .
 上記工程を経て、粘着テープ(バックグラインドテープ)10上に、チップ集合体が得られる。 Through the above steps, a chip assembly is obtained on the adhesive tape (back grind tape) 10.
(工程4)
 次に、個片化されたチップ集合体を、バックグラインドテープからピックアップテープに転写し、バックグラインドテープを剥離した後、ピックアップテープから個々のチップを剥離する。本工程は、例えば、以下のように行う。
(Process 4)
Next, the chip assemblies separated into individual pieces are transferred from the back grind tape to the pickup tape, and after the back grind tape is peeled off, individual chips are peeled off from the pickup tape. This step is performed as follows, for example.
 粘着テープ10の粘着剤層12がエネルギー線硬化性粘着剤の場合には、粘着剤層にエネルギー線を照射して粘着剤層を硬化する。次いで、チップ集合体の裏面側に、ピックアップテープを貼付し、ピックアップが可能なように位置及び方向合わせを行う。この際、チップ集合体の外周側に配置したリングフレームもピックアープテープに貼り合わせ、ピックアップテープの外周縁部をリングフレームに固定する。ピックアップテープには、チップ集合体とリングフレームを同時に貼り合わせてもよいし、別々のタイミングで貼り合わせてもよい。次いで、バックグラインドテープ10のみを剥離し、ピックアップテープ上にチップ集合体を転写する。 When the pressure-sensitive adhesive layer 12 of the pressure-sensitive adhesive tape 10 is an energy ray-curable pressure-sensitive adhesive, the pressure-sensitive adhesive layer is irradiated with energy rays to cure the pressure-sensitive adhesive layer. Next, a pickup tape is affixed to the back side of the chip assembly, and position and orientation are adjusted so that pickup can be performed. At this time, the ring frame disposed on the outer peripheral side of the chip assembly is also bonded to the pick-up tape, and the outer peripheral edge of the pickup tape is fixed to the ring frame. The chip assembly and the ring frame may be bonded to the pickup tape at the same time, or may be bonded at different timings. Next, only the back grind tape 10 is peeled off, and the chip aggregate is transferred onto the pickup tape.
 その後、必要に応じピックアップテープをエキスパンドしてチップ間隔を離間し、ピックアップテープ上にある個々の半導体チップをピックアップし、基板等の上に固定化して、半導体装置を製造する。 Then, if necessary, the pick-up tape is expanded to separate the chips, and individual semiconductor chips on the pick-up tape are picked up and fixed on a substrate or the like to manufacture a semiconductor device.
 なお、ピックアップテープは、特に限定されないが、例えば、基材と、基材の一方の面に設けられた粘着剤層を備えるダイシングテープと呼ばれる粘着テープによって構成される。ピックアップテープの粘着力は、剥離時におけるバックグラインドテープの粘着力よりも大きければ良い。またピックアップテープからチップを剥離する際には粘着力を低減できる性質を有することが好ましい。したがって、ピックアップテープとしては、エネルギー線硬化性粘着テープが好ましく用いられる。 Note that the pickup tape is not particularly limited, but is constituted by, for example, an adhesive tape called a dicing tape including a base material and an adhesive layer provided on one surface of the base material. The adhesive strength of the pickup tape only needs to be greater than the adhesive strength of the back grind tape at the time of peeling. Moreover, when peeling a chip | tip from a pick-up tape, it is preferable to have a property which can reduce adhesive force. Accordingly, an energy ray curable adhesive tape is preferably used as the pickup tape.
 また、ピックアップテープの代わりに、接着テープを用いることもできる。接着テープとは、フィルム状接着剤と剥離シートとの積層体、ダイシングテープとフィルム状接着剤との積層体や、ダイシングテープとダイボンディングテープの両方の機能を有する接着剤層と剥離シートとからなるダイシング・ダイボンディングテープ等が挙げられる。また、ピックアップテープを貼付する前に、個片化された半導体ウエハの裏面側にフィルム状接着剤を貼り合わせてもよい。フィルム状接着剤を用いる場合、フィルム状接着剤はウエハと同形状としてもよい。 Also, an adhesive tape can be used instead of the pickup tape. The adhesive tape is a laminate of a film adhesive and a release sheet, a laminate of a dicing tape and a film adhesive, and an adhesive layer and a release sheet having the functions of both a dicing tape and a die bonding tape. The dicing die-bonding tape etc. which become. In addition, a film adhesive may be bonded to the back side of the separated semiconductor wafer before the pickup tape is applied. When using a film adhesive, the film adhesive may have the same shape as the wafer.
 接着テープを用いる場合やピックアップテープを貼付する前に個片化された半導体ウエハの裏面側にフィルム状接着剤を貼り合わせる場合には、接着テープやピックアップテープ上にある複数の半導体チップは、半導体チップと同形状に分割された接着剤層と共にピックアップされる。そして、半導体チップは接着剤層を介して基板等の上に固定化され、半導体装置が製造される。接着剤層の分割は、レーザーやエキスパンドによって行われる。 When using adhesive tape or when attaching a film adhesive to the back side of a semiconductor wafer that has been singulated before applying the pickup tape, multiple semiconductor chips on the adhesive tape or pickup tape are It is picked up with the adhesive layer divided into the same shape as the chip. And a semiconductor chip is fixed on a board | substrate etc. via an adhesive bond layer, and a semiconductor device is manufactured. The adhesive layer is divided by a laser or an expand.
 以下、実施例に基づき本発明をさらに詳細に説明するが、本発明はこれらの例によって制限されるものではない。 Hereinafter, the present invention will be described in more detail based on examples, but the present invention is not limited to these examples.
 本発明における測定方法、評価方法は以下のとおりである。
[浮き量の最大値]
 ロール状に巻かれた粘着テープを直径20.32cm(8インチ)の円形に切り出し、剥離シートを剥がした後、粘着剤層面を上に向けて、23℃50%RHで30分間平坦面に静置する。30分経過後、23℃50%RHの環境下にて平坦面に定規を立て、粘着テープの外周部に沿って定規を一周させ、各部位における浮き量を測定し、その最大値を求める。
The measurement method and evaluation method in the present invention are as follows.
[Maximum floating value]
The pressure-sensitive adhesive tape wound in a roll is cut into a circular shape with a diameter of 20.32 cm (8 inches), and the release sheet is peeled off. Then, the pressure-sensitive adhesive layer surface is faced up and the surface is kept flat on a flat surface at 23 ° C. and 50% RH for 30 minutes. Put. After 30 minutes, a ruler is set on a flat surface in an environment of 23 ° C. and 50% RH, the ruler is made to circulate along the outer peripheral portion of the adhesive tape, the amount of floating at each part is measured, and the maximum value is obtained.
[剥離評価]
 実施例、比較例で得られた剥離シート付粘着テープを、剥離シートを剥がしつつテープラミネーター(リンテック株式会社製、商品名「RAD-3510」)にセットし、先ダイシング法によりウエハ表面に溝を形成した12インチのシリコンウエハ(厚み760μm)に次の条件で貼付した。
   ロール高さ:0mm    ロール温度:23℃(室温)
   テーブル温度:23℃(室温)
 得られた粘着テープ付シリコンウエハは、裏面研削(先ダイシング法)により厚さ30μm、チップサイズ1mm×1mmに個片化した。
 裏面研削終了後、研削面をディスコ社製DPG8760により研磨した。研磨ホイールには、ディスコ社製「Gettering DP」を用いた。この研磨により、チップのダメージ部(研削痕)を除去した。
 ドライポリッシュ終了後、粘着テープの端部に保持されているチップの状態を目視にて観察し、チップ飛散の有無を確認した。チップの飛散が無かった場合を「良好」とし、チップの飛散が有った場合を「不良」とした。
[Peeling evaluation]
The adhesive tape with release sheet obtained in Examples and Comparative Examples was set on a tape laminator (trade name “RAD-3510”, manufactured by Lintec Corporation) while peeling off the release sheet, and grooves were formed on the wafer surface by the tip dicing method. It was affixed to the formed 12-inch silicon wafer (thickness: 760 μm) under the following conditions.
Roll height: 0mm Roll temperature: 23 ° C (room temperature)
Table temperature: 23 ° C (room temperature)
The obtained silicon wafer with an adhesive tape was separated into pieces having a thickness of 30 μm and a chip size of 1 mm × 1 mm by back surface grinding (tip dicing method).
After the back surface grinding, the ground surface was polished with DPG8760 manufactured by Disco Corporation. “Gettering DP” manufactured by Disco Corporation was used for the grinding wheel. By this polishing, the damaged portion (grinding trace) of the chip was removed.
After completion of dry polishing, the state of the chip held at the end of the adhesive tape was visually observed to confirm the presence or absence of chip scattering. The case where there was no chip scattering was defined as “good”, and the case where the chip was scattered was defined as “bad”.
 なお、以下の実施例、及び比較例の質量部は全て固形分値である。 In addition, all the mass parts of the following Examples and Comparative Examples are solid content values.
[実施例および比較例]
(複層基材)
 基材として厚さ75.0μm、50.0μm、25.0μmのポリエチレンテレフタレートフィルム(ヤング率:2500MPa)を用いた。これらの基材の両面に厚さ27.5μmの緩衝層(LDPE、低密度ポリエチレン)を設けた複層基材1~3を準備した。複層基材1:LDPE(27.5μm)/PET(75μm)/LDPE(27.5μm)
複層基材2:LDPE(27.5μm)/PET(50μm)/LDPE(27.5μm)
複層基材3:LDPE(27.5μm)/PET(25μm)/LDPE(27.5μm)
[Examples and Comparative Examples]
(Multilayer substrate)
A polyethylene terephthalate film (Young's modulus: 2500 MPa) having a thickness of 75.0 μm, 50.0 μm, and 25.0 μm was used as the substrate. Multilayer substrates 1 to 3 were prepared in which a buffer layer (LDPE, low density polyethylene) having a thickness of 27.5 μm was provided on both surfaces of these substrates. Multilayer substrate 1: LDPE (27.5 μm) / PET (75 μm) / LDPE (27.5 μm)
Multilayer substrate 2: LDPE (27.5 μm) / PET (50 μm) / LDPE (27.5 μm)
Multilayer substrate 3: LDPE (27.5 μm) / PET (25 μm) / LDPE (27.5 μm)
 複層基材の一方の面を第1面とし、他方の面を第2面とする。直径20.32cmに切り出した複層基材を、第1面が上面、第2面が下面となるように、平坦面に30分静置する。複層基材が凸状変形した場合には、第1面側に粘着剤層を設けた。複層基材が凹状変形した場合には、第2面側に粘着剤層を設けた。 One side of the multilayer base material is a first side, and the other side is a second side. The multilayer base material cut out to a diameter of 20.32 cm is allowed to stand for 30 minutes on a flat surface so that the first surface is the upper surface and the second surface is the lower surface. When the multilayer base material deformed in a convex shape, an adhesive layer was provided on the first surface side. When the multilayer substrate was deformed in a concave shape, an adhesive layer was provided on the second surface side.
(粘着剤組成物の調製)
 ブチルアクリレート(BA)65質量部、メチルメタクリレート(MMA)20質量部、及び2-ヒドロキシエチルアクリレート(2HEA)15質量部を共重合して得たアクリル系重合体(b)に、アクリル系重合体(b)の全水酸基のうち80モル%の水酸基に付加するように、2-メタクリロイルオキシエチルイソシアネート(MOI)を反応させて、エネルギー線硬化性のアクリル系樹脂(Mw:50万)を得た。
(Preparation of adhesive composition)
An acrylic polymer (b) obtained by copolymerizing 65 parts by mass of butyl acrylate (BA), 20 parts by mass of methyl methacrylate (MMA) and 15 parts by mass of 2-hydroxyethyl acrylate (2HEA) 2-Methacryloyloxyethyl isocyanate (MOI) was reacted so as to be added to 80 mol% of all hydroxyl groups in (b) to obtain an energy ray-curable acrylic resin (Mw: 500,000). .
 このエネルギー線硬化性のアクリル系樹脂100質量部に、エネルギー線硬化性化合物である多官能ウレタンアクリレート(商品名.シコウUT-4332、日本合成化学工業株式会社製)6重量部、イソシアネート系架橋剤(東ソー株式会社製、商品名:コロネートL)を固形分基準で0.375質量部、ビス(2,4,6-トリメチルベンゾイル)フェニルフォスフィンオキシドからなる光重合開始剤1重量部を添加し、溶剤で希釈することにより粘着剤組成物の塗工液を調製した。 To 100 parts by mass of this energy ray-curable acrylic resin, 6 parts by weight of polyfunctional urethane acrylate (trade name: Shikou UT-4332, manufactured by Nippon Synthetic Chemical Industry Co., Ltd.), which is an energy ray-curable compound, isocyanate-based crosslinking agent (Tosoh Co., Ltd., trade name: Coronate L) 0.375 parts by mass based on solid content and 1 part by weight of a photopolymerization initiator consisting of bis (2,4,6-trimethylbenzoyl) phenylphosphine oxide were added. A coating solution for the pressure-sensitive adhesive composition was prepared by diluting with a solvent.
(粘着テープの作製)
 剥離シート(リンテック株式会社製、商品名:SP-PET381031)の剥離処理面に、上記で得た粘着剤組成物の塗工液を乾燥後の厚さが40μmとなるように塗工し、加熱乾燥させて、剥離シート上に粘着剤層を形成した。この粘着剤層を、積層基材の所定面に貼付して、剥離シート付き粘着テープを得た。得られた粘着テープは長尺であり、これをロール状に巻き取った。
 なお、粘着剤層の23℃における貯蔵弾性率は、0.15MPaであった。
(Production of adhesive tape)
Apply the coating solution of the pressure-sensitive adhesive composition obtained above onto the release-treated surface of a release sheet (product of Lintec Co., Ltd., trade name: SP-PET381031) so that the thickness after drying is 40 μm, and heat It was made to dry and the adhesive layer was formed on the peeling sheet. This pressure-sensitive adhesive layer was affixed to a predetermined surface of the laminated base material to obtain a pressure-sensitive adhesive tape with a release sheet. The obtained adhesive tape was long and was wound up into a roll.
In addition, the storage elastic modulus in 23 degreeC of an adhesive layer was 0.15 MPa.
 実施例および比較例で用いた粘着テープを使用して、浮き量の最大値を測定し、剥離評価を行った。結果を表1に示す。 Using the adhesive tapes used in Examples and Comparative Examples, the maximum value of the floating amount was measured, and peeling evaluation was performed. The results are shown in Table 1.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
 以上の結果から、粘着テープの浮き量の最大値が6mm以下であれば、ドライポリッシュを行ってもチップの飛散がなく、歩留まりの向上が達成されることを確認した。 From the above results, it was confirmed that if the maximum floating amount of the adhesive tape was 6 mm or less, there was no chip scattering even when dry polishing was performed, and an improvement in yield was achieved.

Claims (4)

  1.  半導体ウエハ表面に溝が形成された半導体ウエハの裏面を研削して、その研削により半導体ウエハを半導体チップに個片化した後、ドライポリッシュを行う工程を含む製造方法によって半導体チップを製造する際に、半導体ウエハの表面に貼付されて使用される粘着テープであって、
     基材と、粘着剤層とを含み、
     該粘着テープを直径20.32cmの円形に切り出し、粘着剤層面を上に向けて、23℃50%RHで30分間平坦面に静置後の、該テープ外周部の平坦面からの浮き量の最大値が6mm以下である、粘着テープ。
    When manufacturing a semiconductor chip by a manufacturing method including a step of dry polishing after grinding a back surface of a semiconductor wafer having a groove formed on the surface of the semiconductor wafer, separating the semiconductor wafer into semiconductor chips by the grinding , An adhesive tape used by being affixed to the surface of a semiconductor wafer,
    Including a base material and an adhesive layer,
    The pressure-sensitive adhesive tape was cut into a circle having a diameter of 20.32 cm, and the pressure-sensitive adhesive layer surface was faced up and left on a flat surface at 23 ° C. and 50% RH for 30 minutes. An adhesive tape having a maximum value of 6 mm or less.
  2.  前記浮き量の最大値が4mm以下である、請求項1に記載の粘着テープ。 The pressure-sensitive adhesive tape according to claim 1, wherein the maximum value of the floating amount is 4 mm or less.
  3.  前記基材の両面に緩衝層が設けられてなり、一方の緩衝層上に粘着剤層を有する、請求項1または2に記載の粘着テープ。 The pressure-sensitive adhesive tape according to claim 1 or 2, wherein a buffer layer is provided on both surfaces of the base material, and the pressure-sensitive adhesive layer is provided on one buffer layer.
  4.  半導体ウエハの表面側から溝を形成する工程と、
     前記半導体ウエハの表面に、基材と、粘着剤層とを含む粘着テープであって、該粘着テープを直径20.32cmの円形に切り出し、粘着剤層面を上に向けて、23℃50%RHで30分静置後の、該テープ外周部の浮き量の最大値が6mm以下である粘着テープ、を貼付する工程と、
     前記粘着テープが表面に貼付され、かつ前記溝が形成された半導体ウエハを、裏面側から研削して、前記溝の底部を除去して複数のチップに個片化させる工程と、
     前記半導体ウエハを半導体チップに個片化した後、ドライポリッシュを行う工程と、
     前記粘着テープから、チップを剥離する工程と、
     を備える半導体装置の製造方法。
    Forming a groove from the surface side of the semiconductor wafer;
    A pressure-sensitive adhesive tape comprising a base material and a pressure-sensitive adhesive layer on the surface of the semiconductor wafer, the pressure-sensitive adhesive tape being cut into a circle having a diameter of 20.32 cm, the pressure-sensitive adhesive layer surface facing upward, and 23 ° C. and 50% RH A step of applying an adhesive tape having a maximum floating amount of the outer peripheral portion of the tape of 6 mm or less after standing for 30 minutes;
    A step of grinding the semiconductor wafer with the adhesive tape affixed to the front surface and the groove formed from the back side, removing the bottom of the groove and dividing it into a plurality of chips;
    A step of dry polishing after separating the semiconductor wafer into semiconductor chips;
    A step of peeling the chip from the adhesive tape;
    A method for manufacturing a semiconductor device comprising:
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