WO2019180871A1 - Fluid device and system - Google Patents

Fluid device and system Download PDF

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Publication number
WO2019180871A1
WO2019180871A1 PCT/JP2018/011393 JP2018011393W WO2019180871A1 WO 2019180871 A1 WO2019180871 A1 WO 2019180871A1 JP 2018011393 W JP2018011393 W JP 2018011393W WO 2019180871 A1 WO2019180871 A1 WO 2019180871A1
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WO
WIPO (PCT)
Prior art keywords
substrate
base material
boundary
flow path
fluid
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Application number
PCT/JP2018/011393
Other languages
French (fr)
Japanese (ja)
Inventor
直也 石澤
遼 小林
太郎 上野
哲臣 高崎
Original Assignee
株式会社ニコン
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Application filed by 株式会社ニコン filed Critical 株式会社ニコン
Priority to PCT/JP2018/011393 priority Critical patent/WO2019180871A1/en
Publication of WO2019180871A1 publication Critical patent/WO2019180871A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N35/00—Automatic analysis not limited to methods or materials provided for in any single one of groups G01N1/00 - G01N33/00; Handling materials therefor
    • G01N35/10—Devices for transferring samples or any liquids to, in, or from, the analysis apparatus, e.g. suction devices, injection devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N37/00—Details not covered by any other group of this subclass

Definitions

  • the present invention relates to a fluid device and a system.
  • ⁇ -TAS is superior to conventional inspection devices in that it can be measured and analyzed with a small amount of sample, can be carried, and can be disposable at low cost. Furthermore, in the case of using an expensive reagent or in the case of testing a small amount of a large number of specimens, the method is attracting attention as a highly useful method.
  • Non-Patent Document 1 A device including a flow path and a pump disposed on the flow path as a component of ⁇ -TAS has been reported (Non-Patent Document 1).
  • a plurality of solutions are injected into the channel, and the pump is operated to mix the plurality of solutions in the channel.
  • the first base material and the second base material joined at the joining surface are provided, and the second base material includes the first base material and the second base material at the joining surface.
  • a fluid device including a housing portion in which a substance is housed.
  • the energy light is irradiated to the welding region via the fluid device according to the first aspect of the present invention and the first base material laminated on the second base material. And an irradiation apparatus.
  • FIG. 1 is a schematic configuration diagram of a fluidic device and system according to an embodiment.
  • FIG. 3 is a cross-sectional view taken along line AA in FIG. 2. It is a perspective view of the fluid device of one embodiment. It is a disassembled perspective view of the fluid device of one embodiment. It is a top view of the fluid device of one embodiment.
  • FIG. 7 is a cross-sectional view of the fluidic device taken along line IV-IV in FIG. 6. It is a top view of the 2nd substrate of one embodiment.
  • FIG. 3 is a cross-sectional view of a main part of the fluidic device according to one embodiment.
  • FIG. 1 is a schematic configuration diagram of a fluidic device and system according to an embodiment.
  • the system SYS of this embodiment includes a fluid device 1, an irradiation device 80, a placement unit ST, and a driving device 90.
  • the fluidic device 1 of the present embodiment includes a device that detects a sample substance that is a detection target included in a specimen sample by an immune reaction, an enzyme reaction, or the like.
  • the sample substance is, for example, a biomolecule such as nucleic acid, DNA, RNA, peptide, protein, extracellular vesicle.
  • the fluid device 1 includes a base material 2.
  • the base material 2 includes a first substrate (first base material, top plate) 10 and a second substrate (second base material, middle plate) 20.
  • the first substrate 10 and the second substrate 20 are stacked in the thickness direction.
  • first substrate 10 and the second substrate 20 are arranged along a horizontal plane, and the first substrate 10 is arranged above the second substrate 20.
  • the first substrate 10 and the second substrate 20 have a lower surface 1b of the first substrate 10 (referred to as a bonding surface 10b as appropriate) and an upper surface 20a of the second substrate 20 (referred to as a bonding surface 20a as appropriate) as bonding surfaces. They are welded together by welding means.
  • the welding means is laser welding.
  • the first substrate 10 and the second substrate 20 are made of a resin material.
  • the first substrate 10 is made of a transparent resin material, and has a high transmittance for laser light (energy light) L described later.
  • substrate 20 is comprised from the non-transparent resin material, the transmittance
  • substrate 20 are formed with hard materials, such as a polypropylene and a polycarbonate, as an example.
  • the second substrate 20 has a groove on the bonding surface 20a that forms the flow path 50 by bonding both substrates.
  • the second substrate 20 has a flow path 50 that opens to the bonding surface 20 a with the first substrate 10.
  • the channel 50 is, for example, a groove having a rectangular cross section (referred to as the groove 50 as appropriate) having a width or depth of about several ⁇ m to several hundred mm.
  • the second substrate 20 has a welding area WA arranged in a range from the first boundary 50a with the groove 50 to the second boundary 50b at a predetermined distance on the bonding surface 20a. That is, in the second base material 20, the welding area WA is arranged in a range from the one edge of the groove 50 to a position separated by a predetermined distance on the joint surface. In the welding area WA, the flat surfaces of the first substrate and the second substrate are welded together.
  • the welding area WA is disposed so as to surround the entire circumference of the groove 50.
  • the width of the welding area WA is the distance from the edge of the groove 50 to the edge of the accommodating portion 95 described later, and is the distance between the first boundary 50a and the second boundary 50b.
  • the width of the welding area WA is, for example, several hundred ⁇ m or more and several tens mm or less.
  • the width of the welding area WA is preferably 100 ⁇ m or more and 2 mm or less.
  • the width of the welded area WA is less than 100 ⁇ m, it may be difficult to mold the welded area WA due to poor filling during injection molding.
  • the width of the welding area WA exceeds 2 mm and the area becomes wide, a large amount of energy is required such as slowing the scanning speed (details will be described later) of the second substrate 20 with respect to the laser light L or increasing the energy density of the laser light L And productivity may be reduced.
  • substrate 20 has the accommodating part 95 on the opposite side to the welding area
  • the accommodating part 95 is a dent opened to the joint surface 20a side.
  • the second base material 20 has a receiving portion 95 formed on the joining surface at a position away from one edge of the groove 50 by a predetermined distance so as to open to the joining surface side.
  • the accommodating part 95 is formed with the same depth as the groove
  • the accommodating part 95 accommodates a substance having a thermal conductivity smaller than that of the first substrate 10 and the second substrate 20. As an example, air is accommodated in the accommodating portion 95 in the present embodiment.
  • the thermal conductivity of the first substrate 10 and the second substrate 20 is 0.17 to 0.19 (W ⁇ m ⁇ 1 ⁇ K ⁇ 1 ).
  • the thermal conductivity of air is at ambient temperature 0.026 (W ⁇ m -1 ⁇ K -1).
  • the width of the accommodating portion 95 (length from the second boundary 50b) is set in consideration of the presence or absence of surrounding structures. When another structure is disposed in the vicinity of the accommodating portion 95, the width is set so as not to interfere with the structure. Further, in the case where no structure is arranged around the accommodating portion 95, it can be set to be approximately equal to the width of the flow path 50 or larger than the width of the flow path 50. For example, when the depth of the accommodating portion 95 is the same as the depth of the flow path 50, it is preferable to increase the width of the accommodating portion 95 as much as possible from the viewpoint of making the second substrate 20 have a uniform thickness.
  • the width of the accommodating portion 95 is, for example, 100 ⁇ m or more, and preferably 300 ⁇ m or more in consideration of formability.
  • the irradiation device 80 irradiates the fluid device 1 with energy light.
  • the energy light is laser light L as an example.
  • the light source of the laser beam L is not particularly limited.
  • a laser beam such as a semiconductor laser (wavelength: 635 to 940 nm), an Nd: YAG laser (wavelength: 1060 nm), a CO 2 laser (wavelength: 9600, 10600 nm) is used. Examples thereof include an oscillator.
  • the substrate 2 is placed on the upper surface of the placement unit ST.
  • the placement unit ST supports the lower surface 20b of the second substrate 20 from below.
  • the placement unit ST is movable in a two-dimensional direction along a plane (horizontal plane) orthogonal to the optical axis of the laser beam L.
  • the drive unit 90 moves the placement unit ST in a two-dimensional direction along the horizontal plane.
  • the driving unit 90 moves the welding area WA of the second substrate 20 to the irradiation area of the laser light L via the mounting part ST.
  • the laser beam L is irradiated from the irradiation device 80 to the welding area WA.
  • the laser light L passes through the first substrate 10 and reaches the welding area WA of the second substrate 20 that is not transparent to the laser light L.
  • the second substrate 20 absorbs the laser light L and generates heat.
  • the heat generated in the second substrate 20 propagates to the first substrate 10 in contact with the welding area WA, so that the first substrate 10 and the second substrate 20 are melted.
  • the molten resin is cooled and solidified to form a resolidified phase.
  • region where the laser beam L was irradiated are welded.
  • the laser beam L is irradiated to the welding area WA along the flow path 50 by moving the welding area WA of the second substrate 20 relative to the laser light L via the mounting portion ST by the driving unit 90. This is done by scanning.
  • the first scanning (one pass) with respect to the welding area WA is performed.
  • the irradiation region of the laser beam L is smaller than the width of the welding region WA
  • the irradiation of the laser beam L to the welding region WA is the width of the welding region WA. Repeated multiple times while changing the position of the direction (multiple passes).
  • Part of the heat generated in the second substrate 20 propagates along the interface between the first substrate 10 and the second substrate 20 (interface between the lower surface 10b and the upper surface 20a).
  • the accommodating portion 95 is not disposed on the opposite side to the welding area WA of the second boundary 50b and is the resin material of the second substrate 20, of the heat propagated from the irradiation area of the laser light L
  • the heat reaching the second boundary 50b further propagates in a direction away from the welding area WA and does not contribute to the welding of the first substrate 10 and the second substrate 20 in the welding area WA. In other words, even if a predetermined amount of energy is applied to the welding area WA by irradiation with the laser light L, a part of the energy may be consumed without contributing to the welding.
  • the accommodating portion 95 is disposed on the opposite side of the second boundary 50b from the welding area WA, and air having a lower thermal conductivity than the second substrate 20 is accommodated in the accommodating portion 95. Most of the heat reaching the boundary 50b is transmitted to the first substrate 10 in contact with the welding area WA, not to the air accommodated in the accommodating portion 95, and contributes to the welding between the first substrate 10 and the second substrate 20.
  • the first substrate 10 and the second substrate 20 are welded at a position away from the assumed distance with respect to the first boundary 50a. It is assumed that In this case, a wide non-welded portion is formed between the boundary where the first substrate 10 and the second substrate 20 are welded and the first boundary 50a, and the solution in the flow channel 50 enters the non-welded portion and the liquid remains. May occur.
  • the fluid device 1 of this embodiment has a thermal conductivity smaller than the thermal conductivity of the 1st board
  • the fluid device 1 of the present embodiment it is possible to suppress problems such as a solution entering the non-welded portion between the first substrate 10 and the second substrate 20 and causing a liquid residue, and the laser beam L
  • the first substrate 10 and the second substrate 20 can be reduced by reducing factors that cause a decrease in the manufacturing efficiency of the fluidic device 1, such as high-precision control of the amount of light and high-precision alignment between the first substrate 10 and the second substrate 20. And efficient welding.
  • FIG. 2 is a plan view of a main part of the fluid device 1.
  • 3 is a cross-sectional view taken along line AA in FIG. 2 and 3, the placement unit ST and the drive unit 90 are not shown.
  • the fluid device 1 has a valve V that adjusts the flow of the solution in the flow path 50 by deformation in the middle of the flow path 50.
  • the valve V is provided in the through hole 11 that penetrates the first substrate 10 in the thickness direction.
  • Examples of the elastic material that can be used for the valve V include rubber and elastomer resin.
  • a protruding portion 12 protruding in a hemispherical shape is provided on the lower surface of the valve V.
  • the second substrate 20 has a recess 14 at a position facing the valve V.
  • the recess 14 has a contact surface 15 with which the protrusion 12 of the valve V contacts when the valve V is deformed.
  • the contact surface 15 is formed of a hemispherical depression.
  • a flow path (groove) 50 is opened in the contact surface 15.
  • the bottom surface of the channel 50 opens at a position higher than the lowest position of the contact surface 15. That is, a part of the contact surface 15 is formed closer to the bonding surface 20 a than the bottom surface of the flow path 50.
  • the solution flows from one side of the flow channel 50 sandwiching the valve V to the other side of the flow channel 50 via the recess 14 between the protrusion 12 and the contact surface 15.
  • the recess 14 constitutes a part of the flow path 50.
  • the second substrate 20 has a welding region WB arranged on the bonding surface 20a in a range from the third boundary 50c with the valve V (through hole 11) to a fourth boundary 50d that is a predetermined distance away.
  • the welding region WB is disposed around the recess 14 (contact surface 15) as long as it does not interfere with the flow path 50.
  • the accommodating part 95 in this embodiment is arrange
  • the accommodating part 95 accommodates air as a substance having a thermal conductivity smaller than the thermal conductivities of the first substrate 10 and the second substrate 20 as in the first embodiment.
  • the valve V that adjusts the flow of the solution in the flow path 50 abuts.
  • the first substrate 10 and the second substrate can be efficiently welded also around the contact surface 15.
  • FIG. 4 is a perspective view of the fluidic device 1 of the present embodiment.
  • FIG. 5 is an exploded perspective view of the fluidic device 1.
  • FIG. 6 is a plan view of the fluidic device 1.
  • the fluidic device 1 of the present embodiment includes a device that detects a sample substance that is a detection target included in a specimen sample by an immune reaction, an enzyme reaction, or the like.
  • the sample substance is, for example, a biomolecule such as nucleic acid, DNA, RNA, peptide, protein, extracellular vesicle.
  • the fluid device 1 includes a base material 2 and a processing substrate 4. Further, as will be described later, the base member 2 is provided with a seal portion 5 (see FIG. 7). That is, the fluid device 1 includes the seal portion 5.
  • the processing substrate 4 includes a substrate body 40 and a processing unit 41.
  • the board body 40 is a rigid board provided with a circuit pattern (not shown).
  • the substrate body 40 is made of, for example, glass epoxy.
  • the processing unit 41 is mounted on the substrate body 40.
  • the processing unit 41 is, for example, a GMR sensor (Giant Magneto Resistive Sensor).
  • GMR sensor Green Magneto Resistive Sensor
  • an antibody that captures an antigen to be detected is fixed on the surface of each element of the GMR sensor.
  • Each element of the GMR sensor detects magnetic particles associated with the antigen to be detected. That is, in this embodiment, the GMR sensor as the processing unit 41 captures and detects the specimen in the solution.
  • Each element of the GMR sensor is connected to the circuit pattern of the substrate body 40.
  • the function of the processing unit 41 is not limited as long as the processing unit 41 is in contact with the solution flowing through the flow path 50 provided in the substrate 2 and performs some processing on the solution.
  • Examples of the process performed by the processing unit 41 on the solution include a capture process, a detection process, and a heating process.
  • Examples of the processing unit 41 include a DNA array chip, an electric field sensor, a heater, and an element for performing chromatography.
  • the base material 2 includes the first substrate 10, the second substrate 20, and the third substrate (substrate, bottom plate) 30 described above. That is, the base material 2 has three substrates.
  • the first substrate 10, the second substrate 20, and the third substrate 30 are stacked in the thickness direction.
  • the first substrate 10 and the second substrate 20 are welded together by laser welding.
  • the second substrate 20 and the third substrate 30 are welded to each other by welding means such as laser welding or ultrasonic welding.
  • the first substrate 10, the second substrate 20, and the third substrate 30 are made of a resin material.
  • the first substrate 10 and the third substrate 30 are made of a translucent resin material that transmits light.
  • the second substrate 20 is made of a black resin material that absorbs light.
  • the resin material used for the first substrate 10, the second substrate 20, and the third substrate 30, the hard material described above can be used.
  • the first substrate 10, the second substrate 20, and the third substrate 30 are stacked in this order. That is, the second substrate 20 is disposed between the first substrate 10 and the third substrate 30. Further, the processing substrate 4 is disposed between the second substrate 20 and the third substrate 30. Therefore, a part of the processing substrate 4 is accommodated in the base material 2.
  • the processing substrate 4, the first substrate 10, the second substrate 20, and the third substrate 30 are plate members that extend in parallel along one plane.
  • the processing substrate 4, the first substrate 10, the second substrate 20, and the third substrate 30 are described as being disposed along a horizontal plane for convenience of description.
  • the vertical direction is defined on the assumption that the first substrate 10, the second substrate 20, the processing substrate 4, and the third substrate 30 are sequentially stacked from the upper side. That is, the vertical direction in this specification is the stacking direction and the thickness direction of the first substrate 10, the second substrate 20, the processing substrate 4, and the third substrate 30.
  • FIG. 7 is a cross-sectional view of the fluidic device 1 taken along line IV-IV in FIG.
  • the processing substrate 4, the first substrate 10, the second substrate 20, and the third substrate 30 each have an upper surface that faces the upper side (one side in the stacking direction) and a lower surface that faces the lower side (the other side in the stacking direction). More specifically, the first substrate 10 has an upper surface 10a and a lower surface 10b.
  • the second substrate 20 has an upper surface 20a and a lower surface (first opposing surface) 20b.
  • the third substrate 30 has an upper surface (third opposing surface) 30a and a lower surface 30b. That is, the base material 2 has upper surfaces 10a, 20a, and 30a and lower surfaces 10b, 20b, and 30b.
  • the processing substrate 4 has an upper surface (second opposing surface) 4a and a lower surface 4b.
  • the lower surface 10b of the first substrate 10 and the upper surface 20a of the second substrate 20 face each other in the vertical direction.
  • the lower surface 20b of the second substrate 20 and the upper surface 30a of the third substrate 30 face each other in the vertical direction.
  • a part of the upper surface 4 a of the processing substrate 4 faces a part of the lower surface 20 b of the second substrate 20 in the vertical direction.
  • a part of the lower surface 4 b of the processing substrate 4 faces a part of the upper surface 30 a of the third substrate 30 in the vertical direction.
  • a first accommodation recess (accommodation recess) 21 is provided on the lower surface 20 b of the second substrate 20.
  • the first accommodation recess 21 accommodates the processing substrate 4.
  • the bottom surface 21 a of the first housing recess 21 is in contact with the top surface 4 a of the processing substrate 4.
  • a part of the area of the lower surface 20b of the second substrate 20 excluding the first receiving recess 21 and the upper surface 30a of the third substrate 30 are in contact with each other.
  • the base material 2 sandwiches the processing substrate 4 between the lower surface 20b of the second substrate 20 and the upper surface 10a of the first substrate 10. That is, the base material 2 has a pair of substrates (second substrate 20 and third substrate 30) that sandwich the processing substrate 4 therebetween.
  • the base material 2 is provided with a reservoir 60 for storing the solution, a flow path 50 through which the solution flows, an injection hole 71, a supply hole 74, a waste liquid tank 72, a discharge hole 75, and an air hole 73. ing.
  • the reservoir 60 is provided between the second substrate 20 and the third substrate 30.
  • the reservoir 60 is a space formed in a tube shape or a cylindrical shape surrounded by the inner wall surface of the groove portion 22 provided on the lower surface 20 b of the second substrate 20 and the upper surface 30 a of the third substrate 30.
  • the substrate 2 of the present embodiment is provided with a plurality of reservoirs 60.
  • the reservoir 60 stores a solution.
  • the plurality of reservoirs 60 store solutions independently of each other.
  • the reservoir 60 of this embodiment is a flow path type reservoir.
  • One end of the reservoir 60 in the length direction is connected to the injection hole 71.
  • the supply hole 74 is connected to the other end of the reservoir 60 in the length direction.
  • the solution is injected into the reservoir 60 from the injection hole 71.
  • the reservoir 60 supplies the stored solution to the flow path 50 via the supply hole 74.
  • the flow path 50 is provided between the first substrate 10 and the second substrate 20.
  • a part of the flow path 50 is configured as a space surrounded by the groove 13 provided on the lower surface 10 b of the first substrate 10 and the upper surface 20 a of the second substrate 20.
  • a part of the flow path 50 is configured as a space surrounded by the lower surface 10 b of the first substrate 10 and the groove portion 23 provided on the upper surface 20 a of the second substrate 20.
  • a part of the flow path 50 is configured as a space surrounded by the groove 13 provided on the lower surface 10 b of the first substrate 10 and the groove 23 provided on the upper surface 20 a of the second substrate 20.
  • the flow path 50 is a space formed in a tube shape or a cylindrical shape.
  • the solution is supplied from the reservoir 60 to the channel 50.
  • the solution flows in the flow path 50.
  • Each part of the flow path 50 will be described in detail later with reference to FIG.
  • the injection hole 71 penetrates the first substrate 10 and the second substrate 20 in the plate thickness direction.
  • the injection hole 71 is connected to the reservoir 60 located at the boundary between the second substrate 20 and the third substrate 30.
  • the injection hole 71 connects the reservoir 60 to the outside.
  • One injection hole 71 is provided for one reservoir 60.
  • a septum 71 a is provided at the opening of the injection hole 71.
  • An operator (or an injection device) performs an operation of injecting the solution into the reservoir 60 using, for example, a syringe filled with the solution. The operator injects the solution into the reservoir 60 by piercing the septum 71 a with a hollow needle attached to the sesyringe.
  • the supply hole 74 is provided in the second substrate 20.
  • the supply hole 74 penetrates the second substrate 20 in the plate thickness direction.
  • the supply hole 74 connects the reservoir 60 and the flow path 50.
  • the solution stored in the reservoir 60 is supplied to the flow path 50 through the supply hole 74.
  • the waste liquid tank 72 is provided on the base material 2 in order to discard the solution in the flow path 50.
  • the waste liquid tank 72 is connected to the flow path 50 through the discharge hole 75.
  • the waste liquid tank 72 is configured in a space surrounded by the waste liquid recess 25 provided on the lower surface 20 b of the second substrate 20 and the upper surface 30 a of the third substrate 30.
  • the waste liquid tank 72 is filled with an absorbent material 79 that absorbs the waste liquid.
  • the discharge hole 75 penetrates the second substrate 20 in the plate thickness direction.
  • the discharge hole 75 connects the flow path 50 and the waste liquid tank 72.
  • the solution in the flow path 50 is discharged to the waste liquid tank 72 through the discharge hole 75.
  • the air hole 73 penetrates the first substrate 10 and the second substrate 20 in the plate thickness direction.
  • the air hole 73 is located immediately above the waste liquid tank 72.
  • the air hole 73 connects the waste liquid tank 72 to the outside. That is, the waste liquid tank 72 is opened to the outside through the air hole 73.
  • FIG. 8 is a plan view of the second substrate 20.
  • a part of the channel 50 is complemented and displayed by a two-dot chain line or a broken line.
  • the circulation flow path 51 which is a part of the flow path 50 is highlighted with a dot pattern.
  • the flow path 50 includes a circulation flow path 51, a plurality of introduction flow paths 52, and a plurality of discharge flow paths 53.
  • the circulation channel 51 is configured in a loop shape when viewed from the stacking direction.
  • a pump P is disposed in the path of the circulation channel 51.
  • the pump P is composed of three element pumps Pe arranged side by side in the flow path.
  • the element pump Pe is a so-called valve pump.
  • the pump P can convey the liquid in the circulation channel by sequentially opening and closing the three element pumps Pe.
  • the number of element pumps Pe constituting the pump P may be four or more.
  • a plurality (three in this embodiment) of metering valves V are provided in the circulation channel 51.
  • the plurality of metering valves V partitions the circulation channel 51 into a plurality of metering sections.
  • the plurality of metering valves V are arranged so that each metering section has a predetermined volume.
  • An introduction channel 52 is connected to one end of each quantitative section.
  • a discharge channel 53 is connected to the other end of the quantitative section.
  • the introduction flow path 52 is a flow path for introducing the solution into the quantitative section of the circulation flow path 51. At least one introduction channel 52 is provided in one metering section. The introduction flow path 52 is connected to the supply hole 74 on one end side. The introduction flow path 52 is connected to the circulation flow path 51 on the other end side. An introduction valve Vi and an initial close valve Va are provided in the route of the introduction flow path 52.
  • the initial closing valve Va is a valve that is closed only in the initial state when the fluid device 1 is shipped.
  • the introduction valve Vi is opened when the solution is introduced from the reservoir 60 into the flow path 50, and is closed in another state.
  • the discharge channel 53 is a channel for discharging the solution in the circulation channel 51 to the waste liquid tank 72.
  • the discharge channel 53 is connected to the waste liquid tank 72 on one end side. Further, the discharge channel 53 is connected to the circulation channel 51 on the other end side.
  • a discharge valve Vo is provided in the path of the discharge channel 53.
  • the discharge valve Vo is opened when the solution is discharged from the flow path 50 to the waste liquid tank 72, and is closed in another state.
  • the processing channel 55 is included in the circulation channel 51.
  • the solution in the circulation channel 51 passes through the processing space 55 during circulation.
  • the processing unit 41 of the processing substrate 4 is arranged. That is, the processing unit 41 is located inside the processing space 55.
  • the processing unit 41 is provided on the upper surface 4 a of the processing substrate 4.
  • the processing unit 41 contacts the solution in the processing space 55 to process the solution.
  • the fluidic device 1 introduces the solutions in the plurality of reservoirs 60 into different quantification sections of the circulation channel 51, and quantifies the solution.
  • the fluidic device 1 opens the metering valve V and activates the pump P.
  • the solution quantified in each quantification section in the circulation channel 51 is circulated and mixed.
  • the sample in the solution for example, antigen is captured
  • the solution in the circulation channel 51 is discharged to the waste liquid tank 72.
  • a solution containing magnetic particles is supplied into the circulation channel 51. Accordingly, the magnetic particles are bound to the antigen captured by the processing unit 41. Further, the processing unit 41 detects the magnetic particles.
  • the first substrate 10 and the second substrate 20 are welded using the hole 75 as a part of the flow path as the above-mentioned welding area WA from the boundary of each hole.
  • the first substrate 10 and the first substrate 10 are defined as a predetermined distance from the boundary of the metering valve V, the initial closing valve Va, the introduction valve Vi, the discharge valve Vo, and the element pump Pe as valves.
  • Two substrates 20 are welded. Furthermore, the 1st board
  • Heat that is smaller than the thermal conductivity of the first substrate 10 and the second substrate 20 is present on the boundary opposite to the flow paths in the welding area WA and on the boundary opposite to the valves in the welding area WB.
  • An accommodating portion in which air having conductivity is accommodated is disposed.
  • an accommodating portion with both the welding areas WA and WB as a boundary is disposed.
  • accommodating portions 95A to 95N indicated by hatching are arranged.
  • the fluidic device 1 accommodating portions 95A to 95N in which air having a thermal conductivity smaller than the thermal conductivity of the first substrate 10 and the second substrate 20 is accommodated at the boundary between the welding areas WA and WB. Therefore, it is possible to suppress problems such as that the solution enters the non-welded portion between the first substrate 10 and the second substrate 20 and the liquid residue is generated, and also the first control of the light quantity of the laser light L is highly accurate. Factors that reduce the manufacturing efficiency of the fluidic device 1 such as highly accurate alignment between the substrate 10 and the second substrate 20 are reduced, and the first substrate 10 and the second substrate 20 can be efficiently welded. .
  • the configuration in which air is accommodated in the accommodating portion as a substance having a thermal conductivity smaller than the thermal conductivity of the first substrate 10 and the second substrate 20 is not limited to this configuration.
  • substrate 20 may be sufficient.
  • other flow paths (grooves) that are arranged side by side with the flow path 50 and through which a solution (fluid) having a thermal conductivity smaller than that of the first substrate 10 and the second substrate 20 flows.
  • the accommodating part 95 may be sufficient.
  • the configuration in which the welding area WA and the accommodating portion 95 are arranged on one side in the width direction of the flow path 50 is exemplified, but the configuration is not limited thereto.
  • a configuration in which the accommodating portions 95 are disposed on both sides in the width direction of the flow path 50 may be employed. That is, you may further provide the accommodating part 95 formed in the position away from the boundary different from the 1st boundary 50a of the groove
  • the welding of the first substrate 10 and the second substrate 20 has been described.
  • the third substrate 30 is formed of a material transparent to the laser light L, and the second substrate 20 and the second substrate 20 are formed.
  • the present invention can also be applied when welding the three substrates 30.
  • a predetermined distance from the boundary with the reservoir is set in the welding region, and the thermal conductivity is smaller than the thermal conductivity of the second substrate 20 and the third substrate 30 at the boundary opposite to the reservoir in the welding region. What is necessary is just to arrange

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Abstract

The purpose of the present invention is to provide a fluid device in which a first substrate and a second substrate forming a flow path can be efficiently welded. The fluid device is provided with a first substrate and a second substrate bonded at a bonding surface. The second substrate comprises: a groove in the bonding surface for forming a flow path by the first substrate and the second substrate being bonded together; a welding region which is disposed in an area from a first boundary with the groove to a second boundary a prescribed distance away; a containment unit which, on the side of the second boundary opposite of the welding region, is formed opening toward the bonding surface side, and which, when the first substrate and the second substrate are bonded, contains a substance that has a lower thermal conductivity than that of the first substrate and the second substrate.

Description

流体デバイス及びシステムFluidic device and system
　本発明は、流体デバイス及びシステムに関するものである。 The present invention relates to a fluid device and a system.
　近年、体外診断分野における試験の高速化、高効率化、および集積化、又は、検査機器の超小型化を目指したμ－ＴＡＳ（Micro-Total Analysis Systems）の開発などが注目を浴びており、世界的に活発な研究が進められている。 In recent years, the development of μ-TAS (Micro-Total Analysis Systems) aimed at speeding up, increasing efficiency and integration of tests in the field of in-vitro diagnosis, or ultra-miniaturization of test equipment has attracted attention. Active research is ongoing worldwide.
　μ－ＴＡＳは、少量の試料で測定、分析が可能なこと、持ち運びが可能となること、低コストで使い捨て可能なこと等、従来の検査機器に比べて優れている。
　更に、高価な試薬を使用する場合や少量多検体を検査する場合において、有用性が高い方法として注目されている。 μ-TAS is superior to conventional inspection devices in that it can be measured and analyzed with a small amount of sample, can be carried, and can be disposable at low cost.
Furthermore, in the case of using an expensive reagent or in the case of testing a small amount of a large number of specimens, the method is attracting attention as a highly useful method.
　μ－ＴＡＳの構成要素として、流路と、該流路上に配置されるポンプとを備えたデバイスが報告されている（非特許文献１）。このようなデバイスでは、該流路へ複数の溶液を注入し、ポンプを作動させることで、複数の溶液を流路内で混合する。 A device including a flow path and a pump disposed on the flow path as a component of μ-TAS has been reported (Non-Patent Document 1). In such a device, a plurality of solutions are injected into the channel, and the pump is operated to mix the plurality of solutions in the channel.
　本発明の第１の態様に従えば、接合面で接合された第１基材及び第２基材を備え、前記第２基材は、前記接合面において、前記第１基材及び前記第２基材を接合することにより流路を形成する溝と、前記溝との第１境界から所定距離離れた第２境界までの範囲に配置される溶着領域と、前記第２境界の前記溶着領域とは逆側に、前記接合面側に開口して形成され、前記第１基材及び前記第２基材を溶着する際、前記第１基材及び前記第２基材よりも熱伝導率が小さい物質が収容される収容部と、を備える流体デバイスが提供される。 According to the first aspect of the present invention, the first base material and the second base material joined at the joining surface are provided, and the second base material includes the first base material and the second base material at the joining surface. A groove that forms a flow path by bonding the base material, a welding region that is disposed in a range from the first boundary with the groove to a second boundary that is a predetermined distance away, and the welding region at the second boundary; Is formed on the opposite side and opened on the joining surface side, and has a lower thermal conductivity than the first base material and the second base material when welding the first base material and the second base material. There is provided a fluid device including a housing portion in which a substance is housed.
　本発明の第２の態様に従えば、本発明の第１の態様の流体デバイスと、前記第２基材に積層された前記第１基材を介して前記溶着領域に前記エネルギー光を照射する照射装置と、を備えるシステムが提供される。 According to the second aspect of the present invention, the energy light is irradiated to the welding region via the fluid device according to the first aspect of the present invention and the first base material laminated on the second base material. And an irradiation apparatus.
一実施形態の流体デバイス及びシステムの概略構成図。1 is a schematic configuration diagram of a fluidic device and system according to an embodiment. 一実施形態の流体デバイスの要部平面図。The principal part top view of the fluid device of one Embodiment. 図２におけるＡ－Ａ線視断面図。FIG. 3 is a cross-sectional view taken along line AA in FIG. 2. 一実施形態の流体デバイスの斜視図であるIt is a perspective view of the fluid device of one embodiment. 一実施形態の流体デバイスの分解斜視図である。It is a disassembled perspective view of the fluid device of one embodiment. 一実施形態の流体デバイスの平面図である。It is a top view of the fluid device of one embodiment. 図６のIV－IV線に沿う流体デバイスの断面図である。FIG. 7 is a cross-sectional view of the fluidic device taken along line IV-IV in FIG. 6. 一実施形態の第２基板の平面図である。It is a top view of the 2nd substrate of one embodiment. 一実施形態の流体デバイスの要部断面図。FIG. 3 is a cross-sectional view of a main part of the fluidic device according to one embodiment.
　以下、流体デバイス及びシステム実施の形態を、図面を参照して説明する。 Hereinafter, fluid device and system embodiments will be described with reference to the drawings.
［第１実施形態］
　図１は、一実施形態の流体デバイス及びシステムの概略構成図である。
　図１に示すように、本実施形態のシステムＳＹＳは、流体デバイス１、照射装置８０、載置部ＳＴ及び駆動装置９０を備えている。 [First Embodiment]
FIG. 1 is a schematic configuration diagram of a fluidic device and system according to an embodiment.
As shown in FIG. 1, the system SYS of this embodiment includes a fluid device 1, an irradiation device 80, a placement unit ST, and a driving device 90.
　本実施形態の流体デバイス１は、検体試料に含まれる検出対象である試料物質を免疫反応および酵素反応などにより検出するデバイスを含む。試料物質は、例えば、核酸、ＤＮＡ、ＲＮＡ、ペプチド、タンパク質、細胞外小胞体などの生体分子である。 The fluidic device 1 of the present embodiment includes a device that detects a sample substance that is a detection target included in a specimen sample by an immune reaction, an enzyme reaction, or the like. The sample substance is, for example, a biomolecule such as nucleic acid, DNA, RNA, peptide, protein, extracellular vesicle.
　流体デバイス１は、基材２を備えている。基材２は、第１基板（第１基材、トッププレート）１０と、第２基板（第２基材、ミドルプレート）２０とを有する。第１基板１０及び第２基板２０は、厚さ方向に積層されている。 The fluid device 1 includes a base material 2. The base material 2 includes a first substrate (first base material, top plate) 10 and a second substrate (second base material, middle plate) 20. The first substrate 10 and the second substrate 20 are stacked in the thickness direction.
　なお、以下の説明においては、第１基板１０及び第２基板２０は水平面に沿って配置され、第１基板１０は第２基板２０の上側に配置されるものとして説明する。ただし、これは、説明の便宜のために水平方向および上下方向を定義したに過ぎず、本実施形態に係る流体デバイス１及びシステムＳＹＳの使用時の向きを限定しない。 In the following description, it is assumed that the first substrate 10 and the second substrate 20 are arranged along a horizontal plane, and the first substrate 10 is arranged above the second substrate 20. However, this only defines the horizontal direction and the vertical direction for convenience of explanation, and does not limit the orientation when the fluidic device 1 and the system SYS according to the present embodiment are used.
　第１基板１０と第２基板２０とは、第１基板１０の下面１ｂ（適宜、接合面１０ｂと称する）と第２基板２０の上面２０ａ（適宜、接合面２０ａと称する）とを接合面として溶着手段によって互いに溶着される。溶着手段は、レーザー溶着である。 The first substrate 10 and the second substrate 20 have a lower surface 1b of the first substrate 10 (referred to as a bonding surface 10b as appropriate) and an upper surface 20a of the second substrate 20 (referred to as a bonding surface 20a as appropriate) as bonding surfaces. They are welded together by welding means. The welding means is laser welding.
　第１基板１０及び第２基板２０は、樹脂材料から構成される。第１基板１０は、透明な樹脂材料から構成され、後述するレーザー光（エネルギー光）Ｌの透過率が高い。一方で、第２基板２０は、非透明な樹脂材料から構成され、レーザー光Ｌの透過率が低く、レーザー光Ｌの光吸収率が高い。第１基板１０及び第２基板２０は、一例として、ポリプロピレン、ポリカーボネイト等の硬質材で形成されている。第２基板２０については、上記の硬質材に黒色等の着色剤を含有している。 The first substrate 10 and the second substrate 20 are made of a resin material. The first substrate 10 is made of a transparent resin material, and has a high transmittance for laser light (energy light) L described later. On the other hand, the 2nd board | substrate 20 is comprised from the non-transparent resin material, the transmittance | permeability of the laser beam L is low, and the light absorption rate of the laser beam L is high. The 1st board | substrate 10 and the 2nd board | substrate 20 are formed with hard materials, such as a polypropylene and a polycarbonate, as an example. About the 2nd board | substrate 20, coloring agents, such as black, are contained in said hard material.
　第２基板２０は、両基板を接合することにより流路５０を形成する溝を接合面２０ａに有する。本実施形態においては、第２基板２０は、第１基板１０との接合面２０ａに開口する流路５０を有している。流路５０は、一例として、数μｍから数百ｍｍ程度の幅又は深さを有した断面矩形の溝（適宜、溝５０と称する）である。 The second substrate 20 has a groove on the bonding surface 20a that forms the flow path 50 by bonding both substrates. In the present embodiment, the second substrate 20 has a flow path 50 that opens to the bonding surface 20 a with the first substrate 10. The channel 50 is, for example, a groove having a rectangular cross section (referred to as the groove 50 as appropriate) having a width or depth of about several μm to several hundred mm.
　第２基板２０は、接合面２０ａにおいて、溝５０との第１境界５０ａから所定距離離れた第２境界５０ｂまでの範囲に溶着領域ＷＡが配置されている。すなわち、前記第２基材２０は、前記接合面において、溝５０の一方の縁から所定距離離れた位置までの範囲に溶着領域ＷＡが配置されている。溶着領域ＷＡにおいて、第１基板及び第２基板の平坦な表面同士が溶着されている。溶着領域ＷＡは、溝５０の周囲を全周に亘って取り囲んで配置されている。溶着領域ＷＡの幅は、溝５０の縁から後述する収容部９５の縁までの間の距離であり、第１境界５０ａと第２境界５０ｂとの距離である。 The second substrate 20 has a welding area WA arranged in a range from the first boundary 50a with the groove 50 to the second boundary 50b at a predetermined distance on the bonding surface 20a. That is, in the second base material 20, the welding area WA is arranged in a range from the one edge of the groove 50 to a position separated by a predetermined distance on the joint surface. In the welding area WA, the flat surfaces of the first substrate and the second substrate are welded together. The welding area WA is disposed so as to surround the entire circumference of the groove 50. The width of the welding area WA is the distance from the edge of the groove 50 to the edge of the accommodating portion 95 described later, and is the distance between the first boundary 50a and the second boundary 50b.
　溶着領域ＷＡの幅は、一例として、数百μｍ以上、数十ｍｍ以下である。溶着領域ＷＡの幅は、１００μｍ以上、２ｍｍ以下であることが好ましい。溶着領域ＷＡの幅が１００μｍ未満の場合、射出成形時に充填不良により溶着領域ＷＡを成形することが困難になる可能性がある。溶着領域ＷＡの幅が２ｍｍを超え面積が広くなると、レーザー光Ｌに対する第２基板２０の走査速度（詳細は後述）を遅くする、あるいはレーザー光Ｌのエネルギー密度を高める等、多くのエネルギーが必要になり生産性が低下する可能性がある。 The width of the welding area WA is, for example, several hundred μm or more and several tens mm or less. The width of the welding area WA is preferably 100 μm or more and 2 mm or less. When the width of the welded area WA is less than 100 μm, it may be difficult to mold the welded area WA due to poor filling during injection molding. When the width of the welding area WA exceeds 2 mm and the area becomes wide, a large amount of energy is required such as slowing the scanning speed (details will be described later) of the second substrate 20 with respect to the laser light L or increasing the energy density of the laser light L And productivity may be reduced.
　第２基板２０は、第２境界５０ｂの溶着領域ＷＡとは逆側に収容部９５を有している。収容部９５は、接合面２０ａ側に開口する窪みである。すなわち、前記第２基材２０は、前記接合面において、前記溝５０の一方の縁から所定距離離れた位置に、前記接合面側に開口して形成された収容部９５を有する。収容部９５は、例えば、溝５０と同一深さで形成されている。収容部９５は、第１基板１０及び第２基板２０の熱伝導率よりも小さな熱伝導率を有する物質を収容する。本実施形態における収容部９５には、一例として、空気が収容されている。例えば、第１基板１０及び第２基板２０が上述した硬質材で形成されている場合、第１基板１０及び第２基板２０の熱伝導率は、０．１７～０．１９（Ｗ・ｍ－１・Ｋ－１）である。空気の熱伝導率は、常温で０．０２６（Ｗ・ｍ－１・Ｋ－１）である。 The 2nd board | substrate 20 has the accommodating part 95 on the opposite side to the welding area | region WA of the 2nd boundary 50b. The accommodating part 95 is a dent opened to the joint surface 20a side. In other words, the second base material 20 has a receiving portion 95 formed on the joining surface at a position away from one edge of the groove 50 by a predetermined distance so as to open to the joining surface side. The accommodating part 95 is formed with the same depth as the groove | channel 50, for example. The accommodating part 95 accommodates a substance having a thermal conductivity smaller than that of the first substrate 10 and the second substrate 20. As an example, air is accommodated in the accommodating portion 95 in the present embodiment. For example, when the first substrate 10 and the second substrate 20 are formed of the hard material described above, the thermal conductivity of the first substrate 10 and the second substrate 20 is 0.17 to 0.19 (W · m − 1 · K −1 ). The thermal conductivity of air is at ambient temperature 0.026 (W · m -1 · K -1).
　収容部９５の幅（第２境界５０ｂからの長さ）は、周囲の構造物の有無を考慮して設定される。収容部９５の近傍に他の構造物が配置されている場合、当該構造物と干渉しない幅に設定される。また、収容部９５の周囲に構造物が配置されていない場合は、流路５０の幅と同程度または流路５０の幅以上に設定することができる。例えば、収容部９５の深さが流路５０の深さと同一である場合、第２基板２０を均一の厚さとする観点では、収容部９５の幅を可能な範囲で広げることが好ましい。第２基板２０を均一の厚さとすることにより、第２基板２０を射出成形する際の冷却特性がより均一になり、ヒケ等の成形不良を低減できる。収容部９５の幅は、一例として、１００μｍ以上であり、成形性を考慮すると３００μｍ以上であることが好ましい。 The width of the accommodating portion 95 (length from the second boundary 50b) is set in consideration of the presence or absence of surrounding structures. When another structure is disposed in the vicinity of the accommodating portion 95, the width is set so as not to interfere with the structure. Further, in the case where no structure is arranged around the accommodating portion 95, it can be set to be approximately equal to the width of the flow path 50 or larger than the width of the flow path 50. For example, when the depth of the accommodating portion 95 is the same as the depth of the flow path 50, it is preferable to increase the width of the accommodating portion 95 as much as possible from the viewpoint of making the second substrate 20 have a uniform thickness. By setting the second substrate 20 to a uniform thickness, the cooling characteristics when the second substrate 20 is injection-molded become more uniform, and molding defects such as sink marks can be reduced. The width of the accommodating portion 95 is, for example, 100 μm or more, and preferably 300 μm or more in consideration of formability.
　照射装置８０は、流体デバイス１に向けてエネルギー光を照射する。エネルギー光は、一例として、レーザー光Ｌである。レーザー光Ｌの光源としては、特に限定されないが、例えば、半導体レーザー（波長：635～940nm）、Ｎｄ：ＹＡＧレーザー（波長：1060nm）、ＣＯ２レーザー（波長：9600、10600nm）等のレーザー光を発生する発振器等が挙げられる。 The irradiation device 80 irradiates the fluid device 1 with energy light. The energy light is laser light L as an example. The light source of the laser beam L is not particularly limited. For example, a laser beam such as a semiconductor laser (wavelength: 635 to 940 nm), an Nd: YAG laser (wavelength: 1060 nm), a CO 2 laser (wavelength: 9600, 10600 nm) is used. Examples thereof include an oscillator.
　載置部ＳＴは、上面に基材２が載置される。載置部ＳＴは、下方から第２基板２０の下面２０ｂを支持する。載置部ＳＴは、レーザー光Ｌの光軸と直交する平面（水平面）に沿った二次元方向に移動可能である。駆動部９０は、載置部ＳＴを水平面に沿った二次元方向に移動させる。 The substrate 2 is placed on the upper surface of the placement unit ST. The placement unit ST supports the lower surface 20b of the second substrate 20 from below. The placement unit ST is movable in a two-dimensional direction along a plane (horizontal plane) orthogonal to the optical axis of the laser beam L. The drive unit 90 moves the placement unit ST in a two-dimensional direction along the horizontal plane.
　次に、上記の第１基板１０と第２基板２０とを溶着する手順について説明する。なお、第１基板１０及び第２基板２０は予め位置合わせされているものとする。第１基板１０及び／又は第２基板２０（第１基板１０と第２基板２０の少なくとも一方）は、位置合わせのためのアライメントマークを有していてもよい。
　まず、駆動部９０により載置部ＳＴを介して第２基板２０の溶着領域ＷＡをレーザ光Ｌの照射領域に移動させる。 Next, a procedure for welding the first substrate 10 and the second substrate 20 will be described. In addition, the 1st board | substrate 10 and the 2nd board | substrate 20 shall be aligned previously. The first substrate 10 and / or the second substrate 20 (at least one of the first substrate 10 and the second substrate 20) may have an alignment mark for alignment.
First, the driving unit 90 moves the welding area WA of the second substrate 20 to the irradiation area of the laser light L via the mounting part ST.
　第２基板２０の溶着領域ＷＡがレーザ光Ｌの照射領域に位置決めされると、照射装置８０からレーザー光Ｌを溶着領域ＷＡに照射する。レーザー光Ｌは、第１基板１０を透過し、レーザー光Ｌに非透明である第２基板２０の溶着領域ＷＡに到達する。溶着領域ＷＡにおいて第２基板２０は、レーザー光Ｌを吸収し発熱する。第２基板２０で生じた熱が溶着領域ＷＡと接する第１基板１０に伝播することにより、第１基板１０及び第２基板２０が溶融する。 When the welding area WA of the second substrate 20 is positioned in the irradiation area of the laser beam L, the laser beam L is irradiated from the irradiation device 80 to the welding area WA. The laser light L passes through the first substrate 10 and reaches the welding area WA of the second substrate 20 that is not transparent to the laser light L. In the welding area WA, the second substrate 20 absorbs the laser light L and generates heat. The heat generated in the second substrate 20 propagates to the first substrate 10 in contact with the welding area WA, so that the first substrate 10 and the second substrate 20 are melted.
　この後、当該溶着領域ＷＡに対してレーザー光Ｌが相対移動する、あるいはレーザー光Ｌの照射が停止することにより、溶融樹脂が冷却・固化され再固化相が形成される。これにより、レーザー光Ｌが照射された領域の第１基板１０及び第２基板２０が溶着される。 Thereafter, when the laser beam L moves relative to the welding area WA or the irradiation of the laser beam L is stopped, the molten resin is cooled and solidified to form a resolidified phase. Thereby, the 1st board | substrate 10 and the 2nd board | substrate 20 of the area | region where the laser beam L was irradiated are welded.
　溶着領域ＷＡへのレーザー光Ｌの照射は、駆動部９０により載置部ＳＴを介して第２基板２０の溶着領域ＷＡをレーザ光Ｌに対して相対移動させることにより、流路５０に沿って走査して行われる。 The laser beam L is irradiated to the welding area WA along the flow path 50 by moving the welding area WA of the second substrate 20 relative to the laser light L via the mounting portion ST by the driving unit 90. This is done by scanning.
　溶着領域ＷＡの幅に対してレーザー光Ｌの照射領域（実質的に第２基板２０の溶融に寄与できるスポット径）が十分な場合は、溶着領域ＷＡに対する一回の走査（１パス）で第１基板１０及び第２基板２０が溶着されるが、溶着領域ＷＡの幅に対してレーザー光Ｌの照射領域が小さい場合には、溶着領域ＷＡへのレーザー光Ｌの照射は溶着領域ＷＡの幅方向の位置を変えながら複数回繰り返して行われる（複数パス）。 When the irradiation area of the laser beam L (spot diameter that can substantially contribute to melting of the second substrate 20) is sufficient with respect to the width of the welding area WA, the first scanning (one pass) with respect to the welding area WA is performed. When the first substrate 10 and the second substrate 20 are welded, but the irradiation region of the laser beam L is smaller than the width of the welding region WA, the irradiation of the laser beam L to the welding region WA is the width of the welding region WA. Repeated multiple times while changing the position of the direction (multiple passes).
　第２基板２０で生じた熱の一部は、第１基板１０と第２基板２０との界面（下面１０ｂと上面２０ａとの界面）に沿って伝播する。ここで、第２境界５０ｂの溶着領域ＷＡとは逆側に収容部９５が配置されておらず、第２基板２０の樹脂材であった場合、レーザ光Ｌの照射領域から伝播した熱のうち、第２境界５０ｂに達した熱は、さらに、溶着領域ＷＡから離れる方向に伝播し、溶着領域ＷＡにおける第１基板１０と第２基板２０との溶着に寄与しない。換言すると、レーザ光Ｌの照射により溶着領域ＷＡに所定量のエネルギーを付与してもエネルギーの一部が溶着に寄与することなく費消される可能性がある。 Part of the heat generated in the second substrate 20 propagates along the interface between the first substrate 10 and the second substrate 20 (interface between the lower surface 10b and the upper surface 20a). Here, in the case where the accommodating portion 95 is not disposed on the opposite side to the welding area WA of the second boundary 50b and is the resin material of the second substrate 20, of the heat propagated from the irradiation area of the laser light L The heat reaching the second boundary 50b further propagates in a direction away from the welding area WA and does not contribute to the welding of the first substrate 10 and the second substrate 20 in the welding area WA. In other words, even if a predetermined amount of energy is applied to the welding area WA by irradiation with the laser light L, a part of the energy may be consumed without contributing to the welding.
　本実施形態では、第２境界５０ｂの溶着領域ＷＡとは逆側に収容部９５が配置され、収容部９５に第２基板２０よりも熱伝導率が小さい空気が収容されているため、第２境界５０ｂに達した熱の多くは、収容部９５に収容された空気ではなく溶着領域ＷＡと接する第１基板１０に伝播し、第１基板１０と第２基板２０との溶着に寄与する。 In the present embodiment, the accommodating portion 95 is disposed on the opposite side of the second boundary 50b from the welding area WA, and air having a lower thermal conductivity than the second substrate 20 is accommodated in the accommodating portion 95. Most of the heat reaching the boundary 50b is transmitted to the first substrate 10 in contact with the welding area WA, not to the air accommodated in the accommodating portion 95, and contributes to the welding between the first substrate 10 and the second substrate 20.
　例えば、溶着領域ＷＡにおいて、第１境界５０ａの間際まで第１基板１０と第２基板２０とを溶着するために必要なエネルギーを付与可能な光量でレーザー光Ｌを溶着領域ＷＡに照射した場合、第２境界５０ｂに達した熱が溶着に寄与することなく費消されると、第１境界５０ａに対して想定した距離よりも離れた位置で第１基板１０と第２基板２０とが溶着されることが想定される。この場合、第１基板１０と第２基板２０とが溶着された境界と第１境界５０ａとの間に幅広の非溶着部が形成され、当該非溶着部に流路５０の溶液が入り込み液残りが生じる可能性がある。 For example, in the welding area WA, when the laser beam L is irradiated to the welding area WA with a light quantity capable of applying energy necessary for welding the first substrate 10 and the second substrate 20 until just before the first boundary 50a, When the heat that has reached the second boundary 50b is consumed without contributing to the welding, the first substrate 10 and the second substrate 20 are welded at a position away from the assumed distance with respect to the first boundary 50a. It is assumed that In this case, a wide non-welded portion is formed between the boundary where the first substrate 10 and the second substrate 20 are welded and the first boundary 50a, and the solution in the flow channel 50 enters the non-welded portion and the liquid remains. May occur.
　また、溶着に寄与することなく費消される熱を考慮した光量でレーザー光Ｌを溶着領域ＷＡに照射することも考えられるが、溶着に寄与することなく費消される熱は、周囲の構造物の有無等によって変動する。そのため、この変動を流路５０の位置と対応させて予め求めておき、流路５０の位置及び上記変動に応じた光量でレーザー光Ｌを照射すると、上記変動の算出、光量の高精度な制御、第１基板１０と第２基板２０との高精度な位置合わせが必要になる。 In addition, it is conceivable to irradiate the welding area WA with the light amount in consideration of the heat consumed without contributing to the welding, but the heat consumed without contributing to the welding is caused by the surrounding structure. It varies depending on the presence or absence. Therefore, when the fluctuation is determined in advance in correspondence with the position of the flow path 50 and the laser light L is irradiated with the light quantity corresponding to the position of the flow path 50 and the fluctuation, the fluctuation is calculated and the light quantity is controlled with high accuracy. Therefore, highly accurate alignment between the first substrate 10 and the second substrate 20 is required.
　これに対して、本実施形態の流体デバイス１においては、第２境界５０ｂの溶着領域ＷＡとは逆側に、第１基板１０及び第２基板２０の熱伝導率よりも小さな熱伝導率を有する空気が収容された収容部９５が配置されているため、レーザ光Ｌの照射により付与されたエネルギーの多くを溶着に寄与させることができる。そのため、本実施形態の流体デバイス１においては、溶着領域ＷＡの幅に応じて付与されたエネルギーの多くが溶着に寄与することになり、例えば、第１境界５０ａの間際まで第１基板１０と第２基板２０とを溶着することが可能になる。そのため、本実施形態の流体デバイス１においては、第１基板１０と第２基板２０との間の非溶着部に溶液が入り込み液残りが生じる等の不具合を抑制することができるとともに、レーザー光Ｌの光量の高精度な制御、第１基板１０と第２基板２０との高精度な位置合わせ等、流体デバイス１の製造効率低下を招く要因を低減して、第１基板１０と第２基板２０との効率的な溶着が可能になる。 On the other hand, in the fluid device 1 of this embodiment, it has a thermal conductivity smaller than the thermal conductivity of the 1st board | substrate 10 and the 2nd board | substrate 20 on the opposite side to the welding area | region WA of the 2nd boundary 50b. Since the accommodating part 95 in which air is accommodated is arranged, much of the energy applied by the irradiation with the laser light L can be contributed to the welding. Therefore, in the fluid device 1 of the present embodiment, much of the energy applied according to the width of the welding area WA contributes to the welding. For example, the first substrate 10 and the first energy up to the middle of the first boundary 50a. The two substrates 20 can be welded. Therefore, in the fluid device 1 of the present embodiment, it is possible to suppress problems such as a solution entering the non-welded portion between the first substrate 10 and the second substrate 20 and causing a liquid residue, and the laser beam L The first substrate 10 and the second substrate 20 can be reduced by reducing factors that cause a decrease in the manufacturing efficiency of the fluidic device 1, such as high-precision control of the amount of light and high-precision alignment between the first substrate 10 and the second substrate 20. And efficient welding.
［第２実施形態］
　次に、流体デバイス１及びシステムＳＹＳの第２実施形態について、図２及び図３を参照して説明する。
　図２は、流体デバイス１の要部平面図である。図３は、図２におけるＡ－Ａ線視断面図である。なお、図２及び図３においては、載置部ＳＴ、駆動部９０の図示を省略している。 [Second Embodiment]
Next, a second embodiment of the fluid device 1 and the system SYS will be described with reference to FIGS.
FIG. 2 is a plan view of a main part of the fluid device 1. 3 is a cross-sectional view taken along line AA in FIG. 2 and 3, the placement unit ST and the drive unit 90 are not shown.
　図２及び図３に示すように、流体デバイス１は、流路５０の中途に、変形により流路５０中の溶液の流れを調整するバルブＶを有している。バルブＶは、第１基板１０を厚さ方向に貫通する貫通孔１１に設けられている。バルブＶに採用可能な弾性材料としては、ゴム、エラストマー樹脂などが例示される。バルブＶの下面には、半球状に突出する突出部１２が設けられている。 2 and 3, the fluid device 1 has a valve V that adjusts the flow of the solution in the flow path 50 by deformation in the middle of the flow path 50. The valve V is provided in the through hole 11 that penetrates the first substrate 10 in the thickness direction. Examples of the elastic material that can be used for the valve V include rubber and elastomer resin. On the lower surface of the valve V, a protruding portion 12 protruding in a hemispherical shape is provided.
　第２基板２０は、バルブＶと対向する位置に凹部１４を有している。凹部１４は、バルブＶが変形した際にバルブＶの突出部１２が当接する当接面１５を有している。当接面１５は、半球状の窪みで形成されている。図３に示すように、当接面１５には、流路（溝）５０が開口している。流路５０の底面は、当接面１５の最も低い位置よりも高い位置で開口している。すなわち、当接面１５の一部は、流路５０の底面よりも接合面２０ａ側に形成されている。 The second substrate 20 has a recess 14 at a position facing the valve V. The recess 14 has a contact surface 15 with which the protrusion 12 of the valve V contacts when the valve V is deformed. The contact surface 15 is formed of a hemispherical depression. As shown in FIG. 3, a flow path (groove) 50 is opened in the contact surface 15. The bottom surface of the channel 50 opens at a position higher than the lowest position of the contact surface 15. That is, a part of the contact surface 15 is formed closer to the bonding surface 20 a than the bottom surface of the flow path 50.
　バルブＶが変形していない際に、バルブＶを挟んだ流路５０の一方側から、突出部１２と当接面１５との間の凹部１４を介して流路５０の他方側に溶液が流動する。すなわち、凹部１４は、流路５０の一部を構成する。バルブＶが変形して突出部１２が当接面１５に当接することで流路５０中の溶液は流動が阻止される。すなわち、バルブＶは、変形により流路５０を閉じる。 When the valve V is not deformed, the solution flows from one side of the flow channel 50 sandwiching the valve V to the other side of the flow channel 50 via the recess 14 between the protrusion 12 and the contact surface 15. To do. That is, the recess 14 constitutes a part of the flow path 50. As the valve V is deformed and the protrusion 12 comes into contact with the contact surface 15, the solution in the flow path 50 is prevented from flowing. That is, the valve V closes the flow path 50 by deformation.
　第２基板２０は、接合面２０ａにおいて、バルブＶ（貫通孔１１）との第３境界５０ｃから所定距離離れた第４境界５０ｄまでの範囲に溶着領域ＷＢが配置されている。溶着領域ＷＢは、流路５０と干渉しない範囲で凹部１４（当接面１５）の周囲に配置されている。 The second substrate 20 has a welding region WB arranged on the bonding surface 20a in a range from the third boundary 50c with the valve V (through hole 11) to a fourth boundary 50d that is a predetermined distance away. The welding region WB is disposed around the recess 14 (contact surface 15) as long as it does not interfere with the flow path 50.
　本実施形態における収容部９５は、第４境界５０ｄの溶着領域ＷＢとは逆側に配置されている。収容部９５は、第１実施形態と同様に、第１基板１０及び第２基板２０の熱伝導率よりも小さな熱伝導率を有する物質として空気を収容している。 The accommodating part 95 in this embodiment is arrange | positioned on the opposite side to the welding area | region WB of the 4th boundary 50d. The accommodating part 95 accommodates air as a substance having a thermal conductivity smaller than the thermal conductivities of the first substrate 10 and the second substrate 20 as in the first embodiment.
　本実施形態の流体デバイス１及びシステムＳＹＳにおいては、上述した第１実施形態と同様の作用・効果が得られることに加えて、流路５０中の溶液の流れを調整するバルブＶが当接する当接面１５の周囲についても、第１基板１０と第２基板とを効率的に溶着することが可能となる。 In the fluid device 1 and the system SYS of the present embodiment, in addition to obtaining the same operations and effects as those of the first embodiment described above, the valve V that adjusts the flow of the solution in the flow path 50 abuts. The first substrate 10 and the second substrate can be efficiently welded also around the contact surface 15.
［流体デバイス１の実施例］
　次に、流体デバイス１の実施例について、図４乃至図８を参照して説明する。 [Example of fluidic device 1]
Next, an embodiment of the fluid device 1 will be described with reference to FIGS. 4 to 8.
　図４は、本実施形態の流体デバイス１の斜視図である。図５は、流体デバイス１の分解斜視図である。図６は、流体デバイス１の平面図である。 FIG. 4 is a perspective view of the fluidic device 1 of the present embodiment. FIG. 5 is an exploded perspective view of the fluidic device 1. FIG. 6 is a plan view of the fluidic device 1.
　本実施形態の流体デバイス１は、検体試料に含まれる検出対象である試料物質を免疫反応および酵素反応などにより検出するデバイスを含む。試料物質は、例えば、核酸、ＤＮＡ、ＲＮＡ、ペプチド、タンパク質、細胞外小胞体などの生体分子である。 The fluidic device 1 of the present embodiment includes a device that detects a sample substance that is a detection target included in a specimen sample by an immune reaction, an enzyme reaction, or the like. The sample substance is, for example, a biomolecule such as nucleic acid, DNA, RNA, peptide, protein, extracellular vesicle.
　図５に示すように、流体デバイス１は、基材２と処理基板４とを備える。また、後段において説明するように、基材２には、シール部５が設けられる（図７参照）。すなわち、流体デバイス１は、シール部５を備える。 As shown in FIG. 5, the fluid device 1 includes a base material 2 and a processing substrate 4. Further, as will be described later, the base member 2 is provided with a seal portion 5 (see FIG. 7). That is, the fluid device 1 includes the seal portion 5.
　処理基板４は、基板本体４０と、処理部４１と、を有する。 The processing substrate 4 includes a substrate body 40 and a processing unit 41.
　基板本体４０は、回路パターン（図示略）が設けられたリジット基板である。基板本体４０は、例えばガラスエポキシから構成される。 The board body 40 is a rigid board provided with a circuit pattern (not shown). The substrate body 40 is made of, for example, glass epoxy.
　処理部４１は、基板本体４０に実装される。処理部４１は、例えば、ＧＭＲセンサ(Giant Magneto Resistive Sensor)である。ＧＭＲセンサの各素子の表面には、例えば、検出対象である抗原を捕捉する抗体が固定されている。また、ＧＭＲセンサの各素子は、検出対象である抗原と結びついた磁性粒子を検出する。すなわち、本実施形態において、処理部４１としてのＧＭＲセンサは、溶液中の検体を捕捉し、検出する。ＧＭＲセンサの各素子は、基板本体４０の回路パターンに接続されている。 The processing unit 41 is mounted on the substrate body 40. The processing unit 41 is, for example, a GMR sensor (Giant Magneto Resistive Sensor). For example, an antibody that captures an antigen to be detected is fixed on the surface of each element of the GMR sensor. Each element of the GMR sensor detects magnetic particles associated with the antigen to be detected. That is, in this embodiment, the GMR sensor as the processing unit 41 captures and detects the specimen in the solution. Each element of the GMR sensor is connected to the circuit pattern of the substrate body 40.
　処理部４１は基材２に設けられた流路５０を流れる溶液に接触して、溶液に対して何らかの処理を施すものであればその機能は限定されない。処理部４１が溶液に施す処理としては、捕捉処理、検出処理、加熱処理などが例示できる。処理部４１としては、ＤＮＡアレイチップ、電界センサ、加熱ヒータ、クロマトグラフィーを行う素子などが例示できる。 The function of the processing unit 41 is not limited as long as the processing unit 41 is in contact with the solution flowing through the flow path 50 provided in the substrate 2 and performs some processing on the solution. Examples of the process performed by the processing unit 41 on the solution include a capture process, a detection process, and a heating process. Examples of the processing unit 41 include a DNA array chip, an electric field sensor, a heater, and an element for performing chromatography.
　基材２は、上述した第１基板１０と、第２基板２０と、第３基板（基板、ボトムプレート）３０と、を有する。すなわち、基材２は、３つの基板を有する。第１基板１０、第２基板２０および第３基板３０は、厚さ方向に積層される。第１基板１０と第２基板２０とは、レーザー溶着によって互いに溶着される。同様に、第２基板２０と第３基板３０とは、レーザー溶着、超音波溶着などの溶着手段によって互いに溶着される。 The base material 2 includes the first substrate 10, the second substrate 20, and the third substrate (substrate, bottom plate) 30 described above. That is, the base material 2 has three substrates. The first substrate 10, the second substrate 20, and the third substrate 30 are stacked in the thickness direction. The first substrate 10 and the second substrate 20 are welded together by laser welding. Similarly, the second substrate 20 and the third substrate 30 are welded to each other by welding means such as laser welding or ultrasonic welding.
　第１基板１０、第２基板２０および第３基板３０は、樹脂材料から構成される。第１基板１０および第３基板３０は、光を透過する透光性の樹脂材料から構成される。一方で、第２基板２０は、光を吸収する黒色の樹脂材料から構成される。第１基板１０、第２基板２０および第３基板３０に用いられる樹脂材料として、上述した硬質材を用いることができる。 The first substrate 10, the second substrate 20, and the third substrate 30 are made of a resin material. The first substrate 10 and the third substrate 30 are made of a translucent resin material that transmits light. On the other hand, the second substrate 20 is made of a black resin material that absorbs light. As the resin material used for the first substrate 10, the second substrate 20, and the third substrate 30, the hard material described above can be used.
　第１基板１０、第２基板２０および第３基板３０は、この順で積層される。すなわち、第２基板２０は、第１基板１０と第３基板３０との間に配置される。また、第２基板２０と第３基板３０との間には、処理基板４が配置される。したがって、処理基板４の一部は基材２の内部に収容される。 The first substrate 10, the second substrate 20, and the third substrate 30 are stacked in this order. That is, the second substrate 20 is disposed between the first substrate 10 and the third substrate 30. Further, the processing substrate 4 is disposed between the second substrate 20 and the third substrate 30. Therefore, a part of the processing substrate 4 is accommodated in the base material 2.
　処理基板４、第１基板１０、第２基板２０および第３基板３０は、１つの平面に沿って平行に延びる板材である。以下の説明においては、処理基板４、第１基板１０、第２基板２０および第３基板３０が配置は、説明の便宜のため、水平面に沿って配置されるものとして説明する。また、以下の説明において、上側から順に第１基板１０、第２基板２０、処理基板４および第３基板３０が、順に積層されるとして、上下方向を規定する。すなわち、本明細書における上下方向は、第１基板１０、第２基板２０、処理基板４および第３基板３０の積層方向および厚さ方向である。
　ただし、これは、説明の便宜のために水平方向および上下方向を定義したに過ぎず、本実施形態に係る流体デバイス１の使用時の向きを限定しない。 The processing substrate 4, the first substrate 10, the second substrate 20, and the third substrate 30 are plate members that extend in parallel along one plane. In the following description, the processing substrate 4, the first substrate 10, the second substrate 20, and the third substrate 30 are described as being disposed along a horizontal plane for convenience of description. In the following description, the vertical direction is defined on the assumption that the first substrate 10, the second substrate 20, the processing substrate 4, and the third substrate 30 are sequentially stacked from the upper side. That is, the vertical direction in this specification is the stacking direction and the thickness direction of the first substrate 10, the second substrate 20, the processing substrate 4, and the third substrate 30.
However, this only defines the horizontal direction and the vertical direction for convenience of explanation, and does not limit the orientation when the fluidic device 1 according to the present embodiment is used.
　図７は、図６のIV－IV線に沿う流体デバイス１の断面図である。
　処理基板４、第１基板１０、第２基板２０および第３基板３０は、それぞれ上側（積層方向一方側）を向く上面と、下側（積層方向他方側）を向く下面と、を有する。より具体的には、第１基板１０は、上面１０ａと下面１０ｂとを有する。第２基板２０は、上面２０ａと下面（第１対向面）２０ｂとを有する。第３基板３０は、上面（第３対向面）３０ａと下面３０ｂとを有する。すなわち、基材２は、上面１０ａ、２０ａ、３０ａと、下面１０ｂ、２０ｂ、３０ｂと、を有する。また、処理基板４は、上面（第２対向面）４ａと下面４ｂと、を有する。 FIG. 7 is a cross-sectional view of the fluidic device 1 taken along line IV-IV in FIG.
The processing substrate 4, the first substrate 10, the second substrate 20, and the third substrate 30 each have an upper surface that faces the upper side (one side in the stacking direction) and a lower surface that faces the lower side (the other side in the stacking direction). More specifically, the first substrate 10 has an upper surface 10a and a lower surface 10b. The second substrate 20 has an upper surface 20a and a lower surface (first opposing surface) 20b. The third substrate 30 has an upper surface (third opposing surface) 30a and a lower surface 30b. That is, the base material 2 has upper surfaces 10a, 20a, and 30a and lower surfaces 10b, 20b, and 30b. Further, the processing substrate 4 has an upper surface (second opposing surface) 4a and a lower surface 4b.
　第１基板１０の下面１０ｂと第２基板２０の上面２０ａとは、上下方向に対向する。第２基板２０の下面２０ｂと第３基板３０の上面３０ａとは、上下方向に対向する。処理基板４の上面４ａの一部は、第２基板２０の下面２０ｂの一部と上下方向に対向する。処理基板４の下面４ｂの一部は、第３基板３０の上面３０ａの一部と上下方向に対向する。 The lower surface 10b of the first substrate 10 and the upper surface 20a of the second substrate 20 face each other in the vertical direction. The lower surface 20b of the second substrate 20 and the upper surface 30a of the third substrate 30 face each other in the vertical direction. A part of the upper surface 4 a of the processing substrate 4 faces a part of the lower surface 20 b of the second substrate 20 in the vertical direction. A part of the lower surface 4 b of the processing substrate 4 faces a part of the upper surface 30 a of the third substrate 30 in the vertical direction.
　第２基板２０の下面２０ｂには、第１収容凹部（収容凹部）２１が設けられる。第１収容凹部２１は、処理基板４を収容する。第１収容凹部２１の底面２１ａは、処理基板４の上面４ａと接触する。また、第２基板２０の下面２０ｂの第１収容凹部２１を除く領域の一部と、第３基板３０の上面３０ａとは、互いに接触する。これにより、基材２は、第２基板２０の下面２０ｂと第１基板１０の上面１０ａとの間で、処理基板４を挟み込む。すなわち、基材２は、処理基板４を挟み込む一対の基板（第２基板２０および第３基板３０）を有する。 A first accommodation recess (accommodation recess) 21 is provided on the lower surface 20 b of the second substrate 20. The first accommodation recess 21 accommodates the processing substrate 4. The bottom surface 21 a of the first housing recess 21 is in contact with the top surface 4 a of the processing substrate 4. In addition, a part of the area of the lower surface 20b of the second substrate 20 excluding the first receiving recess 21 and the upper surface 30a of the third substrate 30 are in contact with each other. Thereby, the base material 2 sandwiches the processing substrate 4 between the lower surface 20b of the second substrate 20 and the upper surface 10a of the first substrate 10. That is, the base material 2 has a pair of substrates (second substrate 20 and third substrate 30) that sandwich the processing substrate 4 therebetween.
　基材２には、溶液を貯留するリザーバー６０と、溶液が流れる流路５０と、注入孔７１と、供給孔７４と、廃液槽７２と、排出孔７５と、空気孔７３と、が設けられている。 The base material 2 is provided with a reservoir 60 for storing the solution, a flow path 50 through which the solution flows, an injection hole 71, a supply hole 74, a waste liquid tank 72, a discharge hole 75, and an air hole 73. ing.
　リザーバー６０は、第２基板２０と第３基板３０との間に設けられる。リザーバー６０は、第２基板２０の下面２０ｂに設けられた溝部２２の内壁面と第３基板３０の上面３０ａとによって囲まれたチューブ状、あるいは筒状に形成された空間である。本実施形態の基材２には、複数のリザーバー６０が設けられる。リザーバー６０には、溶液が収容される。複数のリザーバー６０は、互いに独立して溶液を収容する。本実施形態のリザーバー６０は、流路型のリザーバーである。リザーバー６０の長さ方向の一端は、注入孔７１に接続される。また、リザーバー６０の長さ方向の他端は、供給孔７４が接続される。流体デバイス１の製造過程において、リザーバー６０には、注入孔７１から溶液が注入される。また、流体デバイス１の使用時において、リザーバー６０は、収容した溶液を供給孔７４を介し流路５０に供給する。 The reservoir 60 is provided between the second substrate 20 and the third substrate 30. The reservoir 60 is a space formed in a tube shape or a cylindrical shape surrounded by the inner wall surface of the groove portion 22 provided on the lower surface 20 b of the second substrate 20 and the upper surface 30 a of the third substrate 30. The substrate 2 of the present embodiment is provided with a plurality of reservoirs 60. The reservoir 60 stores a solution. The plurality of reservoirs 60 store solutions independently of each other. The reservoir 60 of this embodiment is a flow path type reservoir. One end of the reservoir 60 in the length direction is connected to the injection hole 71. Further, the supply hole 74 is connected to the other end of the reservoir 60 in the length direction. In the process of manufacturing the fluid device 1, the solution is injected into the reservoir 60 from the injection hole 71. In addition, when the fluidic device 1 is used, the reservoir 60 supplies the stored solution to the flow path 50 via the supply hole 74.
　流路５０は、第１基板１０と第２基板２０との間に設けられる。流路５０の一部は、第１基板１０の下面１０ｂに設けられた溝部１３と第２基板２０の上面２０ａとによって囲まれた空間として構成される。また、流路５０の一部は、第１基板１０の下面１０ｂと第２基板２０の上面２０ａに設けられた溝部２３とによって囲まれた空間として構成される。さらに、流路５０の一部は、第１基板１０の下面１０ｂに設けられた溝部１３と第２基板２０の上面２０ａに設けられた溝部２３とによって囲まれた空間として構成される。流路５０は、チューブ状、あるいは筒状に形成された空間である。流路５０には、リザーバー６０から溶液が供給される。溶液は、流路５０内を流れる。
　流路５０の各部に関しては、図８を基にして後段において詳細に説明する。 The flow path 50 is provided between the first substrate 10 and the second substrate 20. A part of the flow path 50 is configured as a space surrounded by the groove 13 provided on the lower surface 10 b of the first substrate 10 and the upper surface 20 a of the second substrate 20. A part of the flow path 50 is configured as a space surrounded by the lower surface 10 b of the first substrate 10 and the groove portion 23 provided on the upper surface 20 a of the second substrate 20. Furthermore, a part of the flow path 50 is configured as a space surrounded by the groove 13 provided on the lower surface 10 b of the first substrate 10 and the groove 23 provided on the upper surface 20 a of the second substrate 20. The flow path 50 is a space formed in a tube shape or a cylindrical shape. The solution is supplied from the reservoir 60 to the channel 50. The solution flows in the flow path 50.
Each part of the flow path 50 will be described in detail later with reference to FIG.
　注入孔７１は、第１基板１０および第２基板２０を板厚方向に貫通する。注入孔７１は、第２基板２０と第３基板３０との境界部に位置するリザーバー６０に繋がる。注入孔７１は、リザーバー６０を外部に繋げる。注入孔７１は、１つのリザーバー６０に対して１つ設けられる。 The injection hole 71 penetrates the first substrate 10 and the second substrate 20 in the plate thickness direction. The injection hole 71 is connected to the reservoir 60 located at the boundary between the second substrate 20 and the third substrate 30. The injection hole 71 connects the reservoir 60 to the outside. One injection hole 71 is provided for one reservoir 60.
　注入孔７１の開口には、セプタム７１ａが設けられる。作業者（または注入装置）は、例えば、溶液が充填されたシリンジを用いてリザーバー６０への溶液の注入作業を行う。作業者は、セシリンジに取り付けられた中空針をセプタム７１ａに突刺してリザーバー６０に溶液を注入する。 A septum 71 a is provided at the opening of the injection hole 71. An operator (or an injection device) performs an operation of injecting the solution into the reservoir 60 using, for example, a syringe filled with the solution. The operator injects the solution into the reservoir 60 by piercing the septum 71 a with a hollow needle attached to the sesyringe.
　供給孔７４は、第２基板２０に設けられる。供給孔７４は、第２基板２０を板厚方向に貫通する。供給孔７４は、リザーバー６０と流路５０とを繋ぐ。リザーバー６０に貯留された溶液は、供給孔７４を介して流路５０に供給される。 The supply hole 74 is provided in the second substrate 20. The supply hole 74 penetrates the second substrate 20 in the plate thickness direction. The supply hole 74 connects the reservoir 60 and the flow path 50. The solution stored in the reservoir 60 is supplied to the flow path 50 through the supply hole 74.
　廃液槽７２は、流路５０中の溶液を廃棄する為に基材２に設けられる。廃液槽７２は、排出孔７５を介して流路５０に接続される。廃液槽７２は、第２基板２０の下面２０ｂに設けられた廃液用凹部２５と、第３基板３０の上面３０ａに囲まれた空間に構成される。廃液槽７２には、廃液を吸収する吸収材７９が充填される。 The waste liquid tank 72 is provided on the base material 2 in order to discard the solution in the flow path 50. The waste liquid tank 72 is connected to the flow path 50 through the discharge hole 75. The waste liquid tank 72 is configured in a space surrounded by the waste liquid recess 25 provided on the lower surface 20 b of the second substrate 20 and the upper surface 30 a of the third substrate 30. The waste liquid tank 72 is filled with an absorbent material 79 that absorbs the waste liquid.
　排出孔７５は、第２基板２０を板厚方向に貫通する。排出孔７５は、流路５０と廃液槽７２とを繋ぐ。流路５０内の溶液は、排出孔７５を介して廃液槽７２に排出される。 The discharge hole 75 penetrates the second substrate 20 in the plate thickness direction. The discharge hole 75 connects the flow path 50 and the waste liquid tank 72. The solution in the flow path 50 is discharged to the waste liquid tank 72 through the discharge hole 75.
　空気孔７３は、第１基板１０および第２基板２０を板厚方向に貫通する。空気孔７３は、廃液槽７２の直上に位置する。空気孔７３は、廃液槽７２を外部に繋げる。すなわち、廃液槽７２は、空気孔７３を介して外部に開放される。 The air hole 73 penetrates the first substrate 10 and the second substrate 20 in the plate thickness direction. The air hole 73 is located immediately above the waste liquid tank 72. The air hole 73 connects the waste liquid tank 72 to the outside. That is, the waste liquid tank 72 is opened to the outside through the air hole 73.
　次に、流路５０について、より具体的に説明する。
　図８は、第２基板２０の平面図である。
　なお、図８において、流路５０の一部を二点鎖線又は破線により補完して表示する。また、図８において、流路５０の一部である循環流路５１には、ドット模様により強調して表示する。 Next, the flow path 50 will be described more specifically.
FIG. 8 is a plan view of the second substrate 20.
In FIG. 8, a part of the channel 50 is complemented and displayed by a two-dot chain line or a broken line. In FIG. 8, the circulation flow path 51 which is a part of the flow path 50 is highlighted with a dot pattern.
　流路５０は、循環流路５１と、複数の導入流路５２と、複数の排出流路５３と、を含む。 The flow path 50 includes a circulation flow path 51, a plurality of introduction flow paths 52, and a plurality of discharge flow paths 53.
　循環流路５１は、積層方向から見て、ループ状に構成される。循環流路５１の経路中には、ポンプＰが配置されている。ポンプＰは、流路中に並んで配置された３つの要素ポンプＰｅから構成されている。要素ポンプＰｅは、いわゆるバルブポンプである。ポンプＰは、３つの要素ポンプＰｅを順次開閉することにより、循環流路内において液体を搬送することができる。ポンプＰを構成する要素ポンプＰｅの数は、４以上であってもよい。 The circulation channel 51 is configured in a loop shape when viewed from the stacking direction. A pump P is disposed in the path of the circulation channel 51. The pump P is composed of three element pumps Pe arranged side by side in the flow path. The element pump Pe is a so-called valve pump. The pump P can convey the liquid in the circulation channel by sequentially opening and closing the three element pumps Pe. The number of element pumps Pe constituting the pump P may be four or more.
　循環流路５１の経路中には、複数（本実施形態では３つ）の定量バルブＶが設けられる。複数の定量バルブＶは、循環流路５１を複数の定量区画に区画する。複数の定量バルブＶは、それぞれの定量区画が所定の体積となるように配置されている。それぞれの定量区画の一端には、導入流路５２が接続される。また、定量区画の他端には、排出流路５３が接続される。 A plurality (three in this embodiment) of metering valves V are provided in the circulation channel 51. The plurality of metering valves V partitions the circulation channel 51 into a plurality of metering sections. The plurality of metering valves V are arranged so that each metering section has a predetermined volume. An introduction channel 52 is connected to one end of each quantitative section. In addition, a discharge channel 53 is connected to the other end of the quantitative section.
　導入流路５２は、循環流路５１の定量区画に溶液を導入するための流路である。導入流路５２は、１つの定量区画に少なくとも１つ設けられる。導入流路５２は、一端側において供給孔７４に接続される。また、導入流路５２は、他端側において、循環流路５１に接続される。導入流路５２の経路中には、導入バルブＶｉと初期クローズバルブＶａとが設けられる。 The introduction flow path 52 is a flow path for introducing the solution into the quantitative section of the circulation flow path 51. At least one introduction channel 52 is provided in one metering section. The introduction flow path 52 is connected to the supply hole 74 on one end side. The introduction flow path 52 is connected to the circulation flow path 51 on the other end side. An introduction valve Vi and an initial close valve Va are provided in the route of the introduction flow path 52.
　初期クローズバルブＶａは、流体デバイス１の出荷時の初期状態においてのみ閉塞するバルブである。初期クローズバルブＶａが設けられることで、出荷から使用までの輸送中等において、リザーバー６０内の溶液が、流路５０に流入することを抑制できる。
　導入バルブＶｉは、リザーバー６０から流路５０に溶液を導入する際に開放され、他の状態において閉塞される。 The initial closing valve Va is a valve that is closed only in the initial state when the fluid device 1 is shipped. By providing the initial close valve Va, the solution in the reservoir 60 can be prevented from flowing into the flow path 50 during transportation from shipment to use.
The introduction valve Vi is opened when the solution is introduced from the reservoir 60 into the flow path 50, and is closed in another state.
　排出流路５３は、循環流路５１の溶液を廃液槽７２に排出するための流路である。排出流路５３は、一端側において廃液槽７２に接続される。また、排出流路５３は、他端側において、循環流路５１に接続される。排出流路５３の経路中には、排出バルブＶｏが設けられる。 The discharge channel 53 is a channel for discharging the solution in the circulation channel 51 to the waste liquid tank 72. The discharge channel 53 is connected to the waste liquid tank 72 on one end side. Further, the discharge channel 53 is connected to the circulation channel 51 on the other end side. A discharge valve Vo is provided in the path of the discharge channel 53.
　排出バルブＶｏは、流路５０から廃液槽７２に溶液を排出する際に開放され、他の状態において閉塞される。 The discharge valve Vo is opened when the solution is discharged from the flow path 50 to the waste liquid tank 72, and is closed in another state.
　循環流路５１には、処理空間５５が含まれる。循環流路５１内の溶液は、循環中に処理空間５５を通過する。処理空間５５には、処理基板４の処理部４１が配置される。すなわち、処理部４１は、処理空間５５の内部に位置する。処理部４１は、処理基板４の上面４ａに設けられる。処理部４１は、処理空間５５内の溶液と接触して溶液を処理する。 The processing channel 55 is included in the circulation channel 51. The solution in the circulation channel 51 passes through the processing space 55 during circulation. In the processing space 55, the processing unit 41 of the processing substrate 4 is arranged. That is, the processing unit 41 is located inside the processing space 55. The processing unit 41 is provided on the upper surface 4 a of the processing substrate 4. The processing unit 41 contacts the solution in the processing space 55 to process the solution.
　流体デバイス１による溶液の処理について説明する。
　流体デバイス１は、複数のリザーバー６０内の溶液を、それぞれ循環流路５１の異なる定量区画に導入して、溶液の定量を行う。次いで、流体デバイス１は、定量バルブＶを開放するとともに、ポンプＰを作動させる。これにより、循環流路５１においてそれぞれの定量区画で定量した溶液を循環させて混合する。また、処理部４１において溶液内の検体（例えば抗原を捕捉する。次いで、循環流路５１内の溶液を廃液槽７２に排出する。ついで、磁性粒子を含む溶液を循環流路５１内に供給するとともに、循環させる。これにより、処理部４１に捕捉された抗原に磁性粒子を結び付ける。さらに、処理部４１において磁性粒子を検出する。 Processing of the solution by the fluid device 1 will be described.
The fluidic device 1 introduces the solutions in the plurality of reservoirs 60 into different quantification sections of the circulation channel 51, and quantifies the solution. Next, the fluidic device 1 opens the metering valve V and activates the pump P. Thereby, the solution quantified in each quantification section in the circulation channel 51 is circulated and mixed. Further, the sample in the solution (for example, antigen is captured) in the processing unit 41. Next, the solution in the circulation channel 51 is discharged to the waste liquid tank 72. Next, a solution containing magnetic particles is supplied into the circulation channel 51. Accordingly, the magnetic particles are bound to the antigen captured by the processing unit 41. Further, the processing unit 41 detects the magnetic particles.
　上記の流体デバイス１においては、流路類としての循環流路５１、導入流路５２、排出流路５３との境界、及び流路類としての注入孔７１、空気孔７３、供給孔７４、排出孔７５を流路の一部として、各孔の境界から所定距離を上述した溶着領域ＷＡとして第１基板１０と第２基板２０とが溶着される。また、流体デバイス１においては、バルブ類としての定量バルブＶ、初期クローズバルブＶａ、導入バルブＶｉ、排出バルブＶｏ、要素ポンプＰｅの境界から所定距離を上述した溶着領域ＷＢとして第１基板１０と第２基板２０とが溶着される。さらに、第１基板１０と第２基板２０とは、外周部において溶着される。 In the fluid device 1 described above, the boundary with the circulation flow channel 51, the introduction flow channel 52, and the discharge flow channel 53 as flow channels, and the injection hole 71, the air hole 73, the supply hole 74, and the discharge as flow channels. The first substrate 10 and the second substrate 20 are welded using the hole 75 as a part of the flow path as the above-mentioned welding area WA from the boundary of each hole. Further, in the fluid device 1, the first substrate 10 and the first substrate 10 are defined as a predetermined distance from the boundary of the metering valve V, the initial closing valve Va, the introduction valve Vi, the discharge valve Vo, and the element pump Pe as valves. Two substrates 20 are welded. Furthermore, the 1st board | substrate 10 and the 2nd board | substrate 20 are welded in an outer peripheral part.
　上記の溶着領域ＷＡの流路類とは逆側の境界、及び溶着領域ＷＢのバルブ類のとは逆側の境界には、第１基板１０及び第２基板２０の熱伝導率よりも小さな熱伝導率を有する空気が収容された収容部が配置されている。なお、流路類とバルブ類とが近接した領域においては、溶着領域ＷＡ、ＷＢの双方を境界とした収容部が配置される。図８においては、ハッチングで示される収容部９５Ａ～９５Ｎが配置されている。 Heat that is smaller than the thermal conductivity of the first substrate 10 and the second substrate 20 is present on the boundary opposite to the flow paths in the welding area WA and on the boundary opposite to the valves in the welding area WB. An accommodating portion in which air having conductivity is accommodated is disposed. In the area where the flow paths and valves are close to each other, an accommodating portion with both the welding areas WA and WB as a boundary is disposed. In FIG. 8, accommodating portions 95A to 95N indicated by hatching are arranged.
　流体デバイス１においては、溶着領域ＷＡ、ＷＢの境界に第１基板１０及び第２基板２０の熱伝導率よりも小さな熱伝導率を有する空気が収容された収容部９５Ａ～９５Ｎが配置されているため、第１基板１０と第２基板２０との間の非溶着部に溶液が入り込み液残りが生じる等の不具合を抑制することができるとともに、レーザー光Ｌの光量の高精度な制御、第１基板１０と第２基板２０との高精度な位置合わせ等、流体デバイス１の製造効率低下を招く要因を低減して、第１基板１０と第２基板２０との効率的な溶着が可能になる。 In the fluidic device 1, accommodating portions 95A to 95N in which air having a thermal conductivity smaller than the thermal conductivity of the first substrate 10 and the second substrate 20 is accommodated at the boundary between the welding areas WA and WB. Therefore, it is possible to suppress problems such as that the solution enters the non-welded portion between the first substrate 10 and the second substrate 20 and the liquid residue is generated, and also the first control of the light quantity of the laser light L is highly accurate. Factors that reduce the manufacturing efficiency of the fluidic device 1 such as highly accurate alignment between the substrate 10 and the second substrate 20 are reduced, and the first substrate 10 and the second substrate 20 can be efficiently welded. .
　以上、添付図面を参照しながら本発明に係る好適な実施形態について説明したが、本発明は係る例に限定されないことは言うまでもない。上述した例において示した各構成部材の諸形状や組み合わせ等は一例であって、本発明の主旨から逸脱しない範囲において設計要求等に基づき種々変更可能である。 As described above, the preferred embodiments according to the present invention have been described with reference to the accompanying drawings, but it goes without saying that the present invention is not limited to such examples. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.
　例えば、上記実施形態では、第１基板１０及び第２基板２０の熱伝導率よりも小さな熱伝導率を有する物質として空気を収容部に収容する構成を例示したが、この構成に限定されず、第１基板１０及び第２基板２０の熱伝導率よりも小さな熱伝導率を有する他の物質（気体、液体、固体）を収容する構成であってもよい。この場合、例えば、当該流路５０と並んで配置され、第１基板１０及び第２基板２０の熱伝導率よりも小さな熱伝導率を有する溶液（流体）が流れる他の流路（溝）が収容部９５であってもよい。 For example, in the above-described embodiment, the configuration in which air is accommodated in the accommodating portion as a substance having a thermal conductivity smaller than the thermal conductivity of the first substrate 10 and the second substrate 20 is not limited to this configuration. The structure which accommodates another substance (gas, liquid, solid) which has thermal conductivity smaller than the thermal conductivity of the 1st board | substrate 10 and the 2nd board | substrate 20 may be sufficient. In this case, for example, other flow paths (grooves) that are arranged side by side with the flow path 50 and through which a solution (fluid) having a thermal conductivity smaller than that of the first substrate 10 and the second substrate 20 flows. The accommodating part 95 may be sufficient.
　また、上記実施形態では、流路５０の幅方向の一方側に溶着領域ＷＡ及び収容部９５が配置される構成を例示したが、この構成に限定されない。例えば、図９に示すように、流路５０の幅方向の両側に収容部９５が配置される構成であってもよい。すなわち溝５０の第１境界５０ａとは異なる境界から所定距離離れた位置に形成される収容部９５を更に備えてもよい。この構成を採ることにより、第１基板１０と第２基板２０との溶着効率をさらに向上させることが可能になる。 In the above embodiment, the configuration in which the welding area WA and the accommodating portion 95 are arranged on one side in the width direction of the flow path 50 is exemplified, but the configuration is not limited thereto. For example, as illustrated in FIG. 9, a configuration in which the accommodating portions 95 are disposed on both sides in the width direction of the flow path 50 may be employed. That is, you may further provide the accommodating part 95 formed in the position away from the boundary different from the 1st boundary 50a of the groove | channel 50 by predetermined distance. By adopting this configuration, the welding efficiency between the first substrate 10 and the second substrate 20 can be further improved.
　また、上記実施形態では、第１基板１０と第２基板２０との溶着に関して説明したが、例えば、第３基板３０をレーザー光Ｌに対して透明な材料で形成し、第２基板２０と第３基板３０とを溶着する際にも適用可能である。この場合、リザーバーとの境界から所定距離を溶着領域に設定し、溶着領域のリザーバーとは逆側の境界に、第２基板２０と第３基板３０の熱伝導率よりも小さな熱伝導率を有する物質を収容する収容部を配置すればよい。 In the above embodiment, the welding of the first substrate 10 and the second substrate 20 has been described. For example, the third substrate 30 is formed of a material transparent to the laser light L, and the second substrate 20 and the second substrate 20 are formed. The present invention can also be applied when welding the three substrates 30. In this case, a predetermined distance from the boundary with the reservoir is set in the welding region, and the thermal conductivity is smaller than the thermal conductivity of the second substrate 20 and the third substrate 30 at the boundary opposite to the reservoir in the welding region. What is necessary is just to arrange | position the accommodating part which accommodates a substance.
　また、上記実施形態では、第１基板１０と第２基板２０とをレーザー溶着で接合する構成を例示したが、この構成に限定されず、熱溶着、超音波溶着等の他の溶着手段、又は接着材による接着で接合する構成であってもよい。 Moreover, in the said embodiment, although the structure which joined the 1st board | substrate 10 and the 2nd board | substrate 20 by laser welding was illustrated, it is not limited to this structure, Other welding means, such as heat welding and ultrasonic welding, or The structure joined by adhesion | attachment by an adhesive material may be sufficient.
　１…流体デバイス、　１０…第１基板（第１基材、トッププレート）、　１０ｂ…下面（接合面）、　１４…凹部、　１５…当接面、　２０…第２基板（第２基材、ミドルプレート）、　２０ａ…上面（接合面）、　５０…流路（溝）、　５０ａ…第１境界、　５０ｂ…第２境界、　５０ｃ…第３境界、　５０ｄ…第４境界、　９０…駆動部、　９５…収容部、　Ｌ…レーザー光（エネルギー光）、　ＳＴ…載置部、　ＳＹＳ…システム、　Ｖ…バルブ、　ＷＡ、ＷＢ…溶着領域 DESCRIPTION OF SYMBOLS 1 ... Fluid device, 10 ... 1st board | substrate (1st base material, top plate), 10b ... Lower surface (joining surface), 14 ... Recessed part, 15 ... Contact surface, 20 ... 2nd board | substrate (2nd base material, middle) Plate), 20a ... upper surface (joint surface), 50 ... flow path (groove), 50a ... first boundary, 50b ... second boundary, 50c ... third boundary, 50d ... fourth boundary, 90 ... drive unit, 95 ... Container, L ... Laser light (energy light), ST ... Place, SYS ... System, V ... Valve, WA, WB ... Welding area

Claims (12)

  1. 　接合面で接合された第１基材及び第２基材を備え、
    　前記第２基材は、前記接合面において、
    　前記第１基材及び前記第２基材を接合することにより流路を形成する溝と、
    　前記溝との第１境界から所定距離離れた第２境界までの範囲に配置される溶着領域と、
    　前記第２境界の前記溶着領域とは逆側に、前記接合面側に開口して形成され、前記第１基材及び前記第２基材を溶着する際、前記第１基材及び前記第２基材よりも熱伝導率が小さい物質が収容される収容部と、を備える流体デバイス。     A first base material and a second base material joined at the joining surface;
    In the joining surface, the second substrate is
    A groove that forms a flow path by joining the first base material and the second base material;
    A welding region disposed in a range from a first boundary with the groove to a second boundary separated by a predetermined distance;
    When the first base material and the second base material are welded, the first base material and the second base material are formed on the side opposite to the welding region of the second boundary and open to the joint surface side. A fluid device, comprising: a housing portion that houses a substance having a lower thermal conductivity than the base material.
  2. 　前記物質は、空気である、請求項１に記載の流体デバイス。 The fluidic device according to claim 1, wherein the substance is air.
  3. 　前記収容部は、流体が流れる流路としても使用される、請求項１に記載の流体デバイス。 The fluid device according to claim 1, wherein the accommodating portion is also used as a flow path through which a fluid flows.
  4. 　前記溝の前記第１境界とは異なる境界から所定距離離れた位置に形成される収容部を更に備える、請求項１から３のいずれか一項に記載の流体デバイス。 The fluidic device according to any one of claims 1 to 3, further comprising a housing portion formed at a position away from a boundary different from the first boundary of the groove by a predetermined distance.
  5. 　前記収容部は、前記溝と略平行に形成されている、請求項１から４のいずれか一項に記載の流体デバイス。 The fluid device according to any one of claims 1 to 4, wherein the housing portion is formed substantially parallel to the groove.
  6. 　前記第１基材と前記第２基材とは、一方が透光性の高い材料であり、一方が光吸収特性を有する材料である、請求項１から５のいずれか一項に記載の流体デバイス。 The fluid according to any one of claims 1 to 5, wherein one of the first base material and the second base material is a material having high translucency and one is a material having light absorption characteristics. device.
  7. 　前記第１基材は、変形により前記流路中の流体の流れを調整するバルブを有する、請求項１から６のいずれか一項に記載の流体デバイス。 The fluid device according to any one of claims 1 to 6, wherein the first base member has a valve that adjusts a flow of fluid in the flow path by deformation.
  8. 　前記第２基材は、前記接合面側に開口し変形した前記バルブに当接する当接面が形成され前記流路の一部を構成する凹部を有する、請求項７に記載の流体デバイス。 The fluidic device according to claim 7, wherein the second base material has a concave portion that is formed on a contact surface that is open to the joint surface side and contacts the deformed valve, and forms a part of the flow path.
  9. 　前記当接面は、一部が前記溝の底面よりも開口側に配置されている、請求項８に記載の流体デバイス。 The fluid device according to claim 8, wherein a part of the contact surface is disposed on an opening side with respect to a bottom surface of the groove.
  10. 　前記溶着領域は、前記凹部または前記バルブとの第３境界から所定距離離れた第４境界までの範囲に配置されている、請求項８または９に記載の流体デバイス。 The fluid device according to claim 8 or 9, wherein the welding region is arranged in a range from a third boundary with the concave portion or the valve to a fourth boundary that is a predetermined distance away.
  11. 　請求項１から１０のいずれか一項に記載の流体デバイスと、
    　前記第２基材に積層された前記第１基材を介して前記溶着領域に前記エネルギー光を照射する照射装置と、
    　を備えるシステム。     A fluidic device according to any one of claims 1 to 10,
    An irradiation device for irradiating the welding region with the energy light through the first base material laminated on the second base material;
    A system comprising:
  12. 　前記流体デバイスが載置される載置部と、
    　前記載置部を前記エネルギー光の光軸と直交する平面に沿って移動させる駆動装置と、を備える、請求項１１に記載のシステム。     A mounting section on which the fluidic device is mounted;
    The system of Claim 11 provided with the drive device which moves the said mounting part along the plane orthogonal to the optical axis of the said energy light.
PCT/JP2018/011393 2018-03-22 2018-03-22 Fluid device and system WO2019180871A1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006283965A (en) * 2005-03-10 2006-10-19 Nagano Keiki Co Ltd Fluid control structure of micro flow passage, blocking member, microchip, manufacturing method for microchip, device applying fluid control structure, and blocking member operation device
WO2010109934A1 (en) * 2009-03-23 2010-09-30 株式会社 東芝 Microchannel device
JP2017029941A (en) * 2015-08-04 2017-02-09 パナソニックＩｐマネジメント株式会社 Microchip laser welded structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006283965A (en) * 2005-03-10 2006-10-19 Nagano Keiki Co Ltd Fluid control structure of micro flow passage, blocking member, microchip, manufacturing method for microchip, device applying fluid control structure, and blocking member operation device
WO2010109934A1 (en) * 2009-03-23 2010-09-30 株式会社 東芝 Microchannel device
JP2017029941A (en) * 2015-08-04 2017-02-09 パナソニックＩｐマネジメント株式会社 Microchip laser welded structure

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