WO2019167280A1

WO2019167280A1 - Display device manufacturing method and mother board for display devices

Info

Publication number: WO2019167280A1
Application number: PCT/JP2018/008150
Authority: WO
Inventors: 誠二金子; 貴翁斉藤; 昌彦三輪; 庸輔神崎; 雅貴山中; 屹孫
Original assignee: シャープ株式会社
Priority date: 2018-03-02
Filing date: 2018-03-02
Publication date: 2019-09-06

Abstract

A mother board (52) for organic EL display devices is provided with at least one inorganic film (3, 16, 18, 20) that is included in an organic EL display device, a notch (SL1) formed by cutting a portion off the at least one inorganic film (3, 16, 18, 20) in an area that corresponds to a frame area around the panel area of the organic EL display device, and a metal layer (S1) formed in the notch (SL1) as an alignment mark.

Description

Display device manufacturing method and mother board for display device

The present invention relates to a display device manufacturing method and a display device mother board.

Patent Document 1 discloses a method for improving the contrast of detection of alignment marks provided on the mother substrate in an alignment step between the mother substrate and a vapor deposition mask used when forming a vapor deposition film on the mother substrate. Is described.

Japanese Patent Publication “Japanese Patent Laid-Open No. 2008-293841” (published on Dec. 4, 2008)

However, the method for improving the detection contrast of the alignment mark provided on the mother board described in Patent Document 1 is based on controlling the position or direction of irradiating the illumination for detecting the alignment mark. Thus, no contrivance has been made for the mother board including the alignment marks.

As described above, even if the device is devised only to improve the alignment mark detection contrast, the improvement effect is not satisfactory.

The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a display device manufacturing method and a display device mother substrate with improved contrast for detecting alignment marks.

In order to solve the above-described problems, a display device manufacturing method of the present invention is a display device manufacturing method for manufacturing a display device using a display device mother substrate, and includes at least one layer on a base substrate. A first step of forming an inorganic film; and a step of forming a notch in the at least one layer of the inorganic film in a region corresponding to a frame region around the panel region of the display device on the base substrate. 2 steps, a third step of forming a metal layer on the base substrate, and a fourth step of patterning the metal layer, wherein the notch is formed on the base substrate. Forming a mother substrate for the display device including an alignment mark formed by leaving the metal layer in the part.

According to the above method, it is possible to realize a display device manufacturing method with improved alignment mark detection contrast.

In order to solve the above problems, a mother substrate for a display device according to the present invention is a mother substrate for a display device for manufacturing a display device, and includes at least one inorganic film included in the display device. A notch part formed by notching the at least one layer of the inorganic film in an area corresponding to a frame area around the panel area of the display device, and an alignment mark formed in the notch part, Is provided.

According to the above configuration, it is possible to realize a mother board for a display device having improved alignment mark detection contrast.

According to one embodiment of the present invention, it is possible to provide a display device manufacturing method and a display device mother substrate with improved alignment mark detection contrast.

(A) is a figure for demonstrating schematic structure of the mother board | substrate for organic EL display apparatuses which are comparative examples, (b) is the mother board | substrate for organic EL display apparatuses illustrated to (a), It is a figure for demonstrating the process of aligning with a vapor deposition mask, (c) is a figure which shows the case where the alignment mark with which the mother board | substrate for organic EL display apparatuses was imaged with the alignment camera is imaged. FIG. 3 is a diagram illustrating a schematic configuration of a display area of a mother substrate for an organic EL display device according to Embodiment 1. (A) is a figure which shows schematic structure of the non-display area | region and frame area | region of the mother board | substrate for organic EL display apparatuses of Embodiment 1 shown in FIG. 2, (b) is the organic EL display of Embodiment 1. FIG. It is a figure which shows the state by which the alignment mark with which the mother board | substrate for apparatuses was equipped, and the opening for alignment with which the vapor deposition mask was equipped, (c) is a case where an alignment mark is imaged with the alignment camera FIG. It is a figure which shows an example of the shape of the alignment mark which can be provided in the mother board | substrate for organic EL display apparatuses of Embodiment 1, and the shape of the opening for alignment which can be provided in a vapor deposition mask. 3 is a plan view of a mother substrate for an organic EL display device according to Embodiment 1. FIG. It is a figure which shows the alignment mark with which the frame area | region of the mother board | substrate for organic EL display apparatuses of Embodiment 2 was equipped. 6 is a plan view of a mother substrate for an organic EL display device according to Embodiment 2. FIG. It is a figure which shows the alignment mark with which the frame area | region of the mother board | substrate for organic EL display apparatuses of Embodiment 3 was equipped. It is a figure which shows the alignment mark with which the frame area | region of the mother board | substrate for organic EL display apparatuses of Embodiment 4 was equipped. It is a figure which shows the alignment mark with which the frame area | region of the mother board | substrate for organic EL display apparatuses of Embodiment 5 was equipped.

Embodiments of the present invention will be described with reference to FIGS. 1 to 10 as follows. Hereinafter, for convenience of explanation, components having the same functions as those described in the specific embodiment may be denoted by the same reference numerals and description thereof may be omitted.

In each of the following embodiments, a case where an OLED (Organic Light Emitting Diode: organic light emitting diode) is provided will be described as an example of a display device. However, the present invention is not limited to this. May include an inorganic light-emitting diode or a QLED (Quantum dot light emitting diode).

Embodiment 1
Hereinafter, a mother substrate 50 for an organic EL display device as a comparative example and a mother substrate 51 for an organic EL display device according to Embodiment 1 of the present invention will be described with reference to FIGS. As is well known, at least one organic EL display device is manufactured in each of the

mother substrates

50 and 51 for the organic EL display device.

FIG. 1A is a view showing a metal layer S1 as an alignment mark provided in a frame area EA described later of a mother substrate 50 for an organic EL display device which is a comparative example.

FIG. 1B shows an evaporation mask 60 having an alignment opening 60A and a mother substrate 50 for the organic EL display device shown in FIG. 1A in a vacuum chamber using an alignment camera CA. It is a figure for demonstrating the process of aligning.

(C) of FIG. 1 is a figure which shows the case where the alignment mark with which the mother board | substrate 50 for organic EL display apparatuses was imaged with alignment camera CA was imaged.

As shown in FIG. 1A, a metal layer S1 as an alignment mark in a mother substrate 50 for an organic EL display device is on a base substrate (for example, a mother glass substrate) 10 and is formed of a resin layer 12 and The barrier layer 3, the inorganic insulating film 16 (gate insulating film), the inorganic insulating film 18, and the inorganic insulating film 20 are formed on the laminated film 30.

As the film structure under the metal layer S1 as the alignment mark becomes a multilayer film, the variation in the film thickness of each layer is caused by the light from the alignment camera (light from a light source (not shown) provided on the alignment camera). As shown in FIG. 1A, the reflected light of the light from the alignment camera is reflected in multiple directions.

Therefore, there is a problem that the alignment camera CA cannot read the position of the alignment mark and an alignment error occurs.

A vapor deposition mask 60 having an alignment opening 60A illustrated in FIG. 1B is a light emitting layer that is a vapor deposition film provided on a mother substrate 50 for an organic EL display device illustrated in FIG. The mother substrate 50 for the organic EL display device and the vapor deposition mask 60 need to be aligned with high accuracy.

As shown in the drawing, in the step of aligning the mother substrate 50 for the organic EL display device and the vapor deposition mask 60, the surface of the mother substrate 50 for the organic EL display device disposed opposite to the vapor deposition mask 60 Irradiates light from the surface 10s on the opposite side from the alignment camera CA side, images the reflected light with the alignment camera CA (reads), and aligns the alignment opening 60A with the alignment mark.

In FIG. 1B, only two alignment cameras CA are shown, but in reality, the metal layers S1 as alignment marks are formed at, for example, four corners of a mother substrate 50 for an organic EL display device (see FIG. 4), and the number of alignment cameras CA corresponding to the number of alignment marks provided on the organic EL display device mother substrate 50, that is, the four alignment cameras CA provide a mother substrate for the organic EL display device. 50 and the vapor deposition mask 60 are aligned.

As shown in FIG. 1C, since the reflected light from the metal layer S1 as the alignment mark is reflected in multiple directions as described above, the metal layer S1 as the alignment mark and the alignment camera CA are reflected. It is difficult to ensure contrast with the alignment opening 60A of the vapor deposition mask 60 through which light from the side passes as it is.

Accordingly, as shown in FIG. 1C, when the alignment mark is imaged by the alignment camera CA, the metal layer S1 in the reflected light region from the metal layer S1 as the alignment mark and the opening 60A of the vapor deposition mask 60 is obtained. Since both of the reflected light regions from the surrounding portion of the light appear dark, it is difficult to align the mother substrate 50 for the organic EL display device and the vapor deposition mask 60 with high accuracy.

In FIG. 1C, the brightly visible area is a reflected light area from the non-opening portion of the vapor deposition mask 60.

FIG. 2 is a diagram showing a schematic configuration of the display area DA of the mother substrate 51 for the organic EL display device according to the first embodiment.

3A is a diagram showing a schematic configuration of the non-display area NA and the frame area EA of the mother substrate 51 for the organic EL display device shown in FIG. 2, and FIG. FIG. 4 is a view showing a state in which a metal layer S1 as an alignment mark provided on a mother board 51 for a display device and an alignment opening 60A provided in a vapor deposition mask 60 are aligned, and FIG. ) Is a diagram showing a case where the alignment layer CA images the metal layer S1 as an alignment mark.

A manufacturing process of the mother substrate 51 for an organic EL display device will be described with reference to FIGS.

First, a manufacturing process for the display area DA will be described with reference to FIG. In the display area DA, the resin layer 12 is formed on the base substrate 10. Next, the barrier layer 3 is formed. Next, the TFT layer 4 is formed. Subsequently, the organic EL element layer 5 which is a light emitting element layer is formed. Next, the sealing layer 6 is formed.

Through the above manufacturing process, the structure shown in FIG. 2 can be obtained in the display area DA provided in the organic EL display device on the mother substrate 51 for the organic EL display device.

Next, the manufacturing process for the non-display area NA and the frame area EA will be described. In the following description, a process of forming the metal layer S1 illustrated in FIG.

In the non-display area NA and the frame area EA, the first step of forming at least one layer of inorganic film on the base substrate 10 is performed. That is, in this first step, after the resin layer 12 is formed on the base substrate 10, at least one layer of inorganic film (for example, the barrier layer 3, the inorganic insulating film 16 (gate insulating film), the inorganic insulating film 18, the inorganic insulating film). A film 20 or the like) is formed above the resin layer 12. Next, a second step of forming a notch SL in the at least one layer of the inorganic film in the region corresponding to the frame region EA around the panel region PA of the organic EL display device on the base substrate 10 is performed. Is called. Subsequently, a third step of forming the metal layer S1 on the base substrate 10 is performed. Next, a fourth step of patterning the metal layer S1 is performed. The fourth step includes a step of forming a display device mother substrate 51 including an alignment mark formed by leaving the metal layer S1 in the notch portion SL.

As described above, the manufacturing process for the display area DA and the manufacturing process for the non-display area NA and the frame area EA have been described separately. However, the display area DA, the non-display area NA, and the frame area EA are the same. The process of forming the material (for example, the process of forming the resin layer 12 and the barrier layer 3 in the display area DA, the non-display area NA, and the frame area EA) and the process of patterning or removing the same material are performed as one process. Needless to say, you can.

The metal layer S1 as an alignment mark provided in the frame area EA of the mother substrate 51 for the organic EL display device is formed in the same layer as the source / drain wiring SH shown in FIG. In the embodiment, the third step of forming the metal layer S1 and the step of forming the source / drain wiring SH in the step of forming the TFT layer 4 in the display area DA are performed in one step. Further, the fourth step of patterning the metal layer S1 and the step of patterning the source / drain wiring SH during the step of forming the TFT layer 4 in the display area DA are performed in one step, but the present invention is limited to this. There is nothing.

In FIG. 3A, only one metal layer S1 as an alignment mark is shown, but actually, the metal layer S1 as an alignment mark is, for example, a mother substrate 51 for an organic EL display device. Are provided at four corners (see FIG. 5) by the alignment cameras CA corresponding to the number of alignment marks provided on the mother substrate 51 for the organic EL display device, that is, by four alignment cameras CA. The mother substrate 51 for the organic EL display device and the vapor deposition mask 60 are aligned.

As shown in FIG. 3A, the metal layer S1 as an alignment mark provided in the frame area EA, which is an end area of the mother substrate 51 for an organic EL display device, includes a barrier layer 3 and an inorganic insulation. The film 16, the inorganic insulating film 18, and the inorganic insulating film 20 are removed, and the cutout portion SL is formed so that the resin layer 12 is exposed.

In the present embodiment, the metal layer S1 as the alignment mark is formed in the same layer as the source / drain wiring SH, but is not limited to this.

In this embodiment, the barrier layer 3, the inorganic insulating film 16, the inorganic insulating film 18, and the inorganic insulating film 20 are removed using dry etching to form the cutout portion SL. It is not limited to.

As described above, since the film structure under the metal layer S1 as the alignment mark is only the resin layer 12, the film thickness variation of the film under the metal layer S1 can be suppressed, and light from the alignment camera side can be suppressed. Variation in reflected light can also be suppressed.

FIG. 3C shows an alignment mark obtained by the alignment camera CA in a state where the metal layer S1 as the alignment mark and the alignment opening 60A are aligned as shown in FIG. It is a figure which shows the case where it imaged.

As shown in FIG. 3C, the reflected light region from the metal layer S1 as an alignment mark looks bright, but the reflected light region from the surrounding portion of the metal layer S1 in the opening 60A of the vapor deposition mask 60 is dark. Thus, when aligning the metal layer S1 as the alignment mark and the alignment opening 60A, the contrast of the detection of the alignment mark (that is, the reflected light region from the peripheral portion of the metal layer S1 in the opening 60A) Since the contrast of light in the reflected light region of the metal layer S1 with respect to light can be improved, the mother substrate 51 for the organic EL display device and the vapor deposition mask 60 can be aligned with high accuracy. As a result, in this embodiment, unlike the comparative example, alignment errors can be avoided, the manufacturing yield of the display device can be improved, and the flow tact can be improved.

As shown in FIG. 3A, in this embodiment, the barrier layer 3 and the inorganic insulating film are formed in the non-display area NA in the organic EL display device provided on the mother substrate 51 for the organic EL display device. 16, the inorganic insulating film 18 and the inorganic insulating film 20 are removed, and the case where the bent portion CL is formed so that the resin layer 12 is exposed is described as an example. It does not have to be.

In addition, in this embodiment, although the bending part CL and the notch part SL are formed in the same process, it is not limited to this.

In the present embodiment, as shown in FIG. 3B, the size of the metal layer S1 as an alignment mark is formed smaller than the size of the alignment opening 60A of the vapor deposition mask 60. The case where the shape of the alignment opening 60A, the shape of the notch portion SL, and the shape of the metal layer S1 as the alignment mark are all formed in a circular shape has been described as an example, but the metal layer S1 as the alignment mark has been described. Is smaller than the size of the alignment opening 60A of the vapor deposition mask 60, the shape of the alignment opening 60A, the shape of the cutout portion SL, and the shape of the metal layer S1 as the alignment mark are not particularly limited.

In addition, as a material of the resin layer 12, although a polyimide resin, an epoxy resin, a polyamide resin etc. can be mentioned, for example, it is not limited to this.

The barrier layer 3 is a layer that prevents moisture and impurities from reaching the TFT layer 4 and the organic EL element layer 5. For example, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film formed by CVD is used as the barrier layer 3. Or a laminated film of these.

The TFT layer 4 is provided above the resin layer 12 and the barrier layer 3. The TFT layer 4 includes a semiconductor film 15, an inorganic insulating film 16 (gate insulating film) above the semiconductor film 15, a gate electrode GE above the inorganic insulating film 16, and an inorganic insulating film above the gate electrode GE. The film 18, the capacitive wiring CE above the inorganic insulating film 18, the inorganic insulating film 20 above the capacitive wiring CE, and the source / drain wiring SH including the source / drain electrodes above the inorganic insulating film 20 And a planarizing film 21 above the source / drain wiring SH.

A thin film transistor Tr (TFT) as an active element is configured to include the semiconductor film 15, the inorganic insulating film 16 (gate insulating film), the gate electrode GE, the inorganic insulating film 18, the inorganic insulating film 20, and the source / drain wiring SH. The

The semiconductor film 15 is made of, for example, low temperature polysilicon (LTPS) or an oxide semiconductor.

The metal layer S1 formed in the same layer as the gate electrode GE, the capacitor electrode CE, the source / drain wiring SH, and the source / drain wiring SH is, for example, aluminum (Al), tungsten (W), molybdenum (Mo), tantalum ( A single-layer film or a laminated film of metal containing at least one of Ta), chromium (Cr), titanium (Ti), and copper (Cu).

The inorganic insulating

films

16, 18, and 20 can be formed of, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, a silicon oxynitride film, or a laminated film thereof formed by a CVD method.

The planarizing film (interlayer insulating film) 21 can be made of a photosensitive organic material that can be applied, such as polyimide resin or acrylic resin.

The organic EL element layer 5 includes an anode 22 above the planarizing film 21, a bank 23 covering the edge of the anode 22, an EL (electroluminescence) layer 24 above the anode 22, and an upper layer than the EL layer 24. And each of the subpixels SP includes an island-shaped anode 22, an EL layer 24, and a cathode 25. The bank 23 (anode edge cover) 23 can be made of a photosensitive organic material that can be applied, such as polyimide resin or acrylic resin. The organic EL element layer 5 forms the display area DA and is provided in the upper layer of the TFT layer 4.

The EL layer 24 is configured, for example, by laminating a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer in order from the lower layer side. The light emitting layer is formed in an island shape for each subpixel by an evaporation method or an ink jet method, but the other layers may be a solid common layer. Moreover, the structure which does not form one or more layers among a positive hole injection layer, a positive hole transport layer, an electron carrying layer, and an electron injection layer is also possible.

The anode 22 is composed of, for example, a laminate of ITO (IndiumＩＴＯTin Oxide) and an alloy containing Ag, and has light reflectivity. The cathode 25 can be made of a light-transmitting conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide).

In the organic EL element layer 5, holes and electrons are recombined in the EL layer 24 by the driving current between the anode 22 and the cathode 25, and the exciton generated thereby falls to the ground state, whereby light is emitted. . Since the cathode 25 is light-transmitting and the anode 22 is light-reflective, the light emitted from the EL layer 24 is directed upward and becomes top emission.

The sealing layer 6 is translucent, and includes a first inorganic sealing film 26 that covers the cathode 25, an organic sealing film 27 that is formed above the first inorganic sealing film 26, and an organic sealing film 27. And a second inorganic sealing film 28 covering the surface. The sealing layer 6 covering the organic EL element layer 5 prevents penetration of foreign matters such as water and oxygen into the organic EL element layer 5.

Each of the first inorganic sealing film 26 and the second inorganic sealing film 28 may be composed of, for example, a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or a laminated film formed by CVD. it can. The organic sealing film 27 is a light-transmitting organic film that is thicker than the first inorganic sealing film 26 and the second inorganic sealing film 28, and is composed of a photosensitive organic material that can be applied such as polyimide resin or acrylic resin. can do.

FIGS. 4A to 4E show examples of the shapes of the metal layers S1 and S1 ′ as alignment marks that can be provided on the mother substrate 51 for the organic EL display device, and the vapor deposition mask 60. FIG. It is a figure which shows an example of the shape of opening 60A * 60A 'for alignment which can be performed.

In FIG. 4A, the shape of the alignment opening 60A, the shape of the notch SL, and the shape of the metal layer S1 as the alignment mark are all formed in a circular shape, and the size of the alignment opening 60A is shown in FIG. And the size of the cutout portion SL are the same.

In FIG. 4B, the shape of the alignment opening 60A, the shape of the notch SL, and the shape of the metal layer S1 as the alignment mark are all formed in a circular shape, and the size of the alignment opening 60A is shown in FIG. Is smaller than the size of the notch portion SL.

In FIG. 4C, the alignment opening 60A ′, the cutout portion SL ′, and the metal layer S1 ′ as the alignment mark are all formed in a square shape. This is a case where the size of 60A ′ is larger than the size of the cutout portion SL ′.

FIG. 4D shows that the shape of the alignment opening 60A ′, the shape of the cutout portion SL ′, and the shape of the metal layer S1 ′ as the alignment mark are all formed in a square shape. This is a case where the size of 60A ′ is the same as the size of the cutout portion SL ′.

FIG. 4E shows that the shape of the alignment opening 60A ′, the shape of the cutout portion SL ′, and the shape of the metal layer S1 ′ as the alignment mark are all formed in a square shape. This is a case where the size of 60A ′ is smaller than the size of the cutout portion SL ′.

FIG. 5 is a plan view of a mother substrate 51 for an organic EL display device.

As shown in FIG. 5, cutout portions SL are formed at four corners of a mother substrate 51 for an organic EL display device, and a metal layer S1 as an alignment mark is formed at a part of the cutout portion SL.

Each of the plurality of organic EL display devices provided on the mother substrate 51 for the organic EL display device includes one panel area PA, and surrounds all of the plurality of panel areas PA. The frame area EA, which is the end area, is an area outside the dotted line WR illustrated in FIG. 5, for example.

Note that one panel area PA includes a display area DA illustrated in FIG. 2 and a non-display area NA illustrated in FIG.

In the present embodiment, the case where the metal layer S1 as the alignment mark is formed as a part of the notch SL has been described as an example. However, the present invention is not limited to this, and the metal mark S1 as the alignment mark is not limited thereto. The metal layer S1 may be formed so as to cover the entire cutout portion SL.

As described above, the organic EL display device manufacturing method for manufacturing the organic EL display device using the display device mother substrate 51 includes the first step of forming at least one inorganic film on the base substrate 10. A second step of forming a notch SL in the at least one layer of the inorganic film on the base substrate 10 in a region corresponding to the frame region EA around the panel region PA of the organic EL display device; A third step of forming a metal layer S1 on the substrate 10 and a fourth step of patterning the metal layer S1 are formed. In the fourth step, the metal layer S1 is formed in the notch portion SL. Forming a display device mother substrate 51 including the alignment marks.

Further, after the fourth step, a step of forming the planarizing film 21 is included, and in the step of forming the planarizing film 21, the planarizing film 21 is covered so as to cover the metal layer S1 as the alignment mark. May be formed.

[Embodiment 2]
Next, Embodiment 2 of the present invention will be described based on FIGS. The mother substrate 52 for an organic EL display device according to the present embodiment is different from the first embodiment in that the metal layer S1 as an alignment mark is formed in contact with the base substrate 10, and the others are the first embodiment. As described above. For convenience of explanation, members having the same functions as those shown in the drawings of Embodiment 1 are given the same reference numerals, and descriptions thereof are omitted.

FIG. 6 is a diagram showing a metal layer S1 as an alignment mark provided in the frame area EA which is an end area of the mother substrate 52 for an organic EL display device.

FIG. 7 is a plan view of a mother substrate 52 for an organic EL display device.

As shown in FIGS. 6 and 7, in the step of forming the resin layer 12 on the base substrate 10, the resin layer 12 was formed inside the dotted line WR shown in FIG.

Then, in the step of forming the cutout portion SL1, the barrier layer 3, the inorganic insulating film 16 (gate insulating film), and the inorganic layer are exposed so that the base substrate 10 is exposed outside the dotted line WR shown in FIG. The insulating film 18 and the inorganic insulating film 20 were removed to form a notch SL1.

In the present embodiment, the case where the frame-shaped cutout portion SL1 is formed has been described as an example. However, the present invention is not limited to this, and the step of forming the cutout portion SL1 is illustrated in FIG. The barrier layer 3, the inorganic insulating film 16 (gate insulating film), the inorganic insulating film 18, and the inorganic insulating film 20 are removed so that the base substrate 10 is exposed in a part of the region outside the dotted line WR. May be.

As described above, since only the base substrate 10 is under the metal layer S1 as an alignment mark, film thickness variation of the film under the metal layer S1 can be suppressed, and reflection of light from the alignment camera side is possible. Variations in light can also be suppressed.

Therefore, since the contrast of detection of the alignment mark can be improved, the mother substrate 52 for the organic EL display device and the vapor deposition mask 60 can be aligned with high accuracy.

[Embodiment 3]
Next, Embodiment 3 of the present invention will be described with reference to FIG. The mother substrate 53 for the organic EL display device of the present embodiment is different from the first and second embodiments in that two different kinds of reflected light can be obtained from the metal layer S2 as an alignment mark. As described in 1 and 2. For convenience of explanation, members having the same functions as those shown in the drawings of

Embodiments

1 and 2 are given the same reference numerals, and descriptions thereof are omitted.

FIG. 8 is a view showing a metal layer S2 as an alignment mark provided in the frame area EA which is an end area of the mother substrate 53 for an organic EL display device.

As shown in the drawing, the metal layer S2 as an alignment mark includes a resin layer 12 surrounding the notch SL and the notch SL adjacent to the notch SL in the step of patterning the metal layer S2. It is also formed on a laminated film 30 composed of the barrier layer 3, the inorganic insulating film 16 (gate insulating film), the inorganic insulating film 18, and the inorganic insulating film 20.

In the present embodiment, the metal layer S2 as the alignment mark is formed in the same layer as the source / drain wiring SH, but is not limited to this.

In the portion where the metal layer S2 as an alignment mark is in contact with the resin layer 12, the thickness under the metal layer S2 can be suppressed because the resin layer 12 is only under the metal layer S2, The reflected light 1 can be obtained that can suppress variations in reflected light from the alignment camera side.

On the other hand, in the portion where the metal layer S2 as the alignment mark is formed on the laminated film 30, the reflected light 2 from which light from the alignment camera side is reflected in multiple directions can be obtained.

As described above, the reflected light 1 and the reflected light 2 which are two kinds of reflected light having different brightnesses are obtained from the metal layer S2 as the alignment mark provided on the mother substrate 53 for the organic EL display device. By using these, the contrast of detection of the alignment mark can be improved, so that the mother substrate 53 for the organic EL display device and the vapor deposition mask 60 can be aligned with high accuracy.

If the size of the metal layer S2 as the alignment mark is smaller than the size of the alignment opening 60A of the vapor deposition mask 60, the shape of the alignment opening 60A, the shape of the notch portion SL, and the metal as the alignment mark The shape of the layer S2 is not particularly limited.

[Embodiment 4]
Next, Embodiment 4 of the present invention will be described with reference to FIG. In the mother substrate 54 for an organic EL display device of the present embodiment, the first to third embodiments are different in that three types of reflected light can be obtained from the metal layer S3 as an alignment mark and the reflection auxiliary portion S4 as an alignment mark. Unlike the above, the others are as described in the first to third embodiments. For convenience of explanation, members having the same functions as those shown in the drawings of Embodiments 1 to 3 are given the same reference numerals, and descriptions thereof are omitted.

FIG. 9 is a diagram showing a metal layer S3 as an alignment mark and a reflection assisting part S4 as an alignment mark provided in the frame area EA of the mother substrate 54 for an organic EL display device.

After forming the resin layer 12, the barrier layer 3, and the inorganic insulating film 16 (gate insulating film) on the base substrate 10 and before forming the inorganic insulating film 18, a reflection auxiliary portion as an alignment mark S4 was formed only in a part of the frame area EA.

Then, the inorganic insulating film 18 and the inorganic insulating film 20 were formed so as to cover the reflection assisting part S4 as the alignment mark.

Then, the inorganic insulating film 18 and the inorganic insulating film 20 formed on the reflection auxiliary portion S4 as the alignment mark are removed to expose the reflection auxiliary portion S4, and in the region surrounding the reflection auxiliary portion S4, the barrier layer 3 Then, the inorganic insulating film 16 (gate insulating film), the inorganic insulating film 18, and the inorganic insulating film 20 were removed, the resin layer 12 was exposed, and the cutout portion SL2 was formed.

As shown in the drawing, the metal layer S3 as the alignment mark covers the reflection assisting part S4 as the alignment mark and is adjacent to the notch part SL2 and the notch part SL2 in the step of patterning the metal layer S3. Also formed on the laminated film 30 including the resin layer 12, the barrier layer 3, the inorganic insulating film 16 (gate insulating film), the inorganic insulating film 18, and the inorganic insulating film 20 surrounding the notch portion SL2. Has been.

In the mother substrate 54 for an organic EL display device, the reflection assisting portion S4 is formed in the same layer as the gate electrode GE, and the metal layer S3 is formed in the same layer as the source / drain wiring SH. It is not limited to this.

As described above, from the metal layer S3 as the alignment mark and the reflection assisting part S4 as the alignment mark provided on the mother substrate 54 for the organic EL display device, reflected light that is three kinds of reflected light having different brightnesses. 1. The reflected light 2 and the reflected light 3 can be obtained, and by using these, the contrast of detection of the alignment mark can be improved, and even when the wavelength of the reflected light is changed, it can be easily recognized. The mother substrate 54 for the organic EL display device and the vapor deposition mask 60 can be aligned with high accuracy.

In the mother substrate 54 for an organic EL display device, the metal layer S3 as the alignment mark and the reflection auxiliary portion S4 as the alignment mark may be formed in a similar shape.

In the present embodiment, in order to obtain three types of reflected light having different brightness, the resin layer 12 and the barrier layer that surround the notch SL2 adjacent to the notch SL2 in the metal layer S3 as an alignment mark. 3, the inorganic insulating film 16 (gate insulating film), the inorganic insulating film 18, and the inorganic insulating film 20 are also formed on the laminated film 30. In this case, the metal layer S3 as an alignment mark may not be provided in this portion.

If the size of the metal layer S3 as the alignment mark is smaller than the size of the alignment opening 60A of the vapor deposition mask 60, the shape of the alignment opening 60A, the shape of the cutout portion SL2, and the metal as the alignment mark The shape of the layer S3 is not particularly limited.

[Embodiment 5]
Next, Embodiment 5 of the present invention will be described with reference to FIG. In the mother substrate 54 for the organic EL display device of the fourth embodiment described above, the reflection assisting part S4 is formed in the same layer as the gate electrode GE. However, in the mother substrate 55 for the organic EL display device of the present embodiment, Is different from the fourth embodiment in that the reflection assisting portion S5 is formed in the same layer as the capacitor electrode CE, and the others are as described in the fourth embodiment. For convenience of explanation, members having the same functions as those shown in the drawings of the fourth embodiment are given the same reference numerals, and descriptions thereof are omitted.

FIG. 10 is a diagram showing a metal layer S3 as an alignment mark and a reflection assisting portion S5 as an alignment mark provided in the frame area EA of the mother substrate 55 for an organic EL display device.

After forming the resin layer 12, the barrier layer 3, the inorganic insulating film 16 (gate insulating film), and the inorganic insulating film 18 on the base substrate 10, and before forming the inorganic insulating film 20, alignment is performed. The reflection assisting part S5 as a mark was formed only in a part of the frame area EA.

Thereafter, an inorganic insulating film 20 was formed so as to cover the reflection assisting portion S5 as an alignment mark.

Then, the inorganic insulating film 20 formed on the auxiliary reflection portion S5 as an alignment mark is removed to expose the auxiliary auxiliary portion S5, and in the region surrounding the auxiliary reflection portion S5, the barrier layer 3 and the inorganic insulating film 16 (gate insulating film), the inorganic insulating film 18, and the inorganic insulating film 20 were removed, the resin layer 12 was exposed, and a notch SL3 was formed.

As shown in the drawing, the metal layer S3 as the alignment mark covers the reflection assisting part S5 as the alignment mark and is adjacent to the notch part SL3 and the notch part SL3 in the step of patterning the metal layer S3. Also formed on the laminated film 30 including the resin layer 12, the barrier layer 3, the inorganic insulating film 16 (gate insulating film), the inorganic insulating film 18, and the inorganic insulating film 20 surrounding the notch portion SL3. Has been.

In the mother substrate 55 for an organic EL display device, the reflection assisting portion S5 is formed in the same layer as the capacitor electrode CE, and the metal layer S3 is formed in the same layer as the source / drain wiring SH. It is not limited to this.

As described above, from the metal layer S3 as the alignment mark and the reflection assisting part S5 as the alignment mark provided on the mother substrate 55 for the organic EL display device, reflected light that is three kinds of reflected light having different brightnesses. 1. The reflected light 2 and the reflected light 3 can be obtained, and by using these, the contrast of detection of the alignment mark can be improved, and even when the wavelength of the reflected light is changed, it can be easily recognized. The mother substrate 55 for the organic EL display device and the vapor deposition mask 60 can be aligned with high accuracy.

In the mother substrate 55 for an organic EL display device, the metal layer S3 as the alignment mark and the reflection assisting portion S5 as the alignment mark may be formed in a similar shape.

In the present embodiment, in order to obtain three types of reflected light having different brightness, the resin layer 12 and the barrier layer that surround the notch SL3 adjacent to the notch SL3 in the metal layer S3 as an alignment mark. 3, the inorganic insulating film 16 (gate insulating film), the inorganic insulating film 18, and the inorganic insulating film 20 are also formed on the laminated film 30. In this case, the metal layer S3 as an alignment mark may not be provided in this portion.

If the size of the metal layer S3 as the alignment mark is smaller than the size of the alignment opening 60A of the vapor deposition mask 60, the shape of the alignment opening 60A, the shape of the notch SL3, and the metal as the alignment mark The shape of the layer S3 is not particularly limited.

[Summary]
[Aspect 1]
A display device manufacturing method for manufacturing a display device using a mother board for a display device,
A first step of forming an inorganic film of at least one layer on a base substrate;
A second step of forming a notch in the at least one layer of the inorganic film in a region corresponding to a frame region around the panel region of the display device on the base substrate;
A third step of forming a metal layer on the base substrate;
A fourth step of patterning the metal layer,
The fourth step includes a step of forming a display device mother substrate including an alignment mark formed on the base substrate leaving the metal layer in the cutout portion. .

[Aspect 2]
A fifth step of disposing a vapor deposition mask for forming a vapor deposition film included in the display device with respect to the mother substrate for the display device;
In the aspect 5, the fifth step includes a step of aligning an alignment opening provided in the vapor deposition mask and the alignment mark formed on the mother substrate for the display device. Display device manufacturing method.

[Aspect 3]
The display device manufacturing method according to aspect 2, wherein the alignment step includes a step of imaging the alignment mark formed on the display device mother substrate from the opposite side of the vapor deposition mask.

[Aspect 4]
In order to form a bent portion in the display device, the method further includes forming a bent portion by removing a part of the inorganic film in a region corresponding to the non-display region of the panel region, and forming the bent portion.
The method for manufacturing a display device according to any one of aspects 1 to 3, wherein the forming step of the bent portion includes the second step.

[Aspect 5]
In the fourth step, a step of forming a mother substrate for the display device including an alignment mark formed by leaving the metal layer on the cutout portion and the inorganic film around the cutout portion. A method for manufacturing a display device according to any one of aspects 1 to 4, wherein:

[Aspect 6]
The method for manufacturing a display device according to any one of aspects 1 to 5, wherein the first step includes a step of forming a reflection assisting portion for assisting reflection of light by the alignment mark on the base substrate.

[Aspect 7]
The metal layer is the same layer as the first electrode layer provided in the panel region,
The reflection assisting part is the same layer as the second electrode layer provided in the panel region,
The method for manufacturing a display device according to Aspect 6, wherein the first electrode layer is a layer provided as an upper layer than the second electrode layer.

[Aspect 8]
The manufacturing method of the display device according to the aspect 6 or 7, wherein the metal layer and the reflection assisting part are formed in a similar shape.

[Aspect 9]
Before the first step, a step of forming a resin layer on the base substrate is included,
The display device manufacturing method according to any one of aspects 1 to 8, wherein in the fourth step, the alignment mark is formed so as to be in contact with the resin layer.

[Aspect 10]
Before the first step, a step of forming a resin layer on the base substrate is included,
The display device manufacturing method according to any one of aspects 1 to 8, wherein in the fourth step, the alignment mark is formed outside the resin layer and in contact with the base substrate.

[Aspect 11]
After the fourth step, a step of forming a planarizing film is included,
The method for manufacturing a display device according to any one of aspects 1 to 10, wherein, in the step of forming the planarization film, the planarization film is formed so as to cover the alignment mark.

[Aspect 12]
The display device manufacturing method according to any one of aspects 1 to 11, wherein the display device includes an organic light emitting diode.

[Aspect 13]
A mother board for a display device for manufacturing a display device,
At least one inorganic film included in the display device;
A notch portion formed by notching the at least one layer of the inorganic film in a region corresponding to a frame region around the panel region of the display device;
An alignment mark formed in the notch,
A mother board for a display device comprising:

[Additional Notes]
The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention. Furthermore, a new technical feature can be formed by combining the technical means disclosed in each embodiment.

The present invention can be used for display devices.

3 barrier layer, 4 TFT layer, 5 organic EL element layer, 6 sealing layer, 10 base substrate, 16/18/20 inorganic insulating film, 21 flattened film, 51/52/53/54/55 organic EL display device Mother board, CL bent part, SL / SL1 / SL2 / SL3 / SL 'notch, DA display area, NA non-display area, EA frame area, Tr thin film transistor, GE gate electrode, SH source / drain wiring, CE Capacitance electrode, S1, S2, S3, S1 'metal layer as alignment mark, S4, S5, reflection auxiliary part as alignment mark, 60 vapor deposition mask, 60A / 60A' alignment opening, PA panel area

Claims

A display device manufacturing method for manufacturing a display device using a mother board for a display device,
A first step of forming an inorganic film of at least one layer on a base substrate;
A second step of forming a notch in the at least one layer of the inorganic film in a region corresponding to a frame region around the panel region of the display device on the base substrate;
A third step of forming a metal layer on the base substrate;
A fourth step of patterning the metal layer,
The fourth step includes a step of forming a display device mother substrate including an alignment mark formed on the base substrate leaving the metal layer in the cutout portion. .
A fifth step of disposing a vapor deposition mask for forming a vapor deposition film included in the display device with respect to the mother substrate for the display device;
2. The step of claim 1, wherein the fifth step includes a step of aligning an alignment opening provided in the vapor deposition mask and the alignment mark formed on the mother substrate for the display device. Display device manufacturing method.
The method for manufacturing a display device according to claim 2, wherein the alignment step includes a step of imaging the alignment mark formed on the mother substrate for the display device from the opposite side of the vapor deposition mask.
In order to form a bent portion in the display device, the method further includes forming a bent portion by removing a part of the inorganic film in a region corresponding to the non-display region of the panel region, and forming the bent portion.
The method for manufacturing a display device according to claim 1, wherein the forming step of the bent portion includes the second step.
In the fourth step, a step of forming a mother substrate for the display device including an alignment mark formed by leaving the metal layer on the cutout portion and the inorganic film around the cutout portion. The method for manufacturing a display device according to any one of claims 1 to 4, wherein:
6. The display device according to claim 1, wherein the first step includes a step of forming, on the base substrate, a reflection assisting portion that assists reflection of light by the alignment mark. Production method.
The metal layer is the same layer as the first electrode layer provided in the panel region,
The reflection assisting part is the same layer as the second electrode layer provided in the panel region,
The method for manufacturing a display device according to claim 6, wherein the first electrode layer is a layer provided as an upper layer than the second electrode layer.
The method for manufacturing a display device according to claim 6 or 7, wherein the metal layer and the reflection assisting part are formed in a similar shape.
Before the first step, a step of forming a resin layer on the base substrate is included,
9. The display device manufacturing method according to claim 1, wherein in the fourth step, the alignment mark is formed so as to be in contact with the resin layer.
Before the first step, a step of forming a resin layer on the base substrate is included,
9. The method of manufacturing a display device according to claim 1, wherein in the fourth step, the alignment mark is formed outside the resin layer and in contact with the base substrate.
After the fourth step, a step of forming a planarizing film is included,
The method for manufacturing a display device according to claim 1, wherein in the step of forming the planarizing film, the planarizing film is formed so as to cover the alignment mark.
The method for manufacturing a display device according to any one of claims 1 to 11, wherein the display device includes an organic light emitting diode.
A mother board for a display device for manufacturing a display device,
At least one inorganic film included in the display device;
A notch portion formed by notching the at least one layer of the inorganic film in a region corresponding to a frame region around the panel region of the display device;
An alignment mark formed in the notch,
A mother board for a display device comprising: