WO2019164638A3 - On-chip detection of spin states in color centers for metrology and information processing - Google Patents

On-chip detection of spin states in color centers for metrology and information processing Download PDF

Info

Publication number
WO2019164638A3
WO2019164638A3 PCT/US2019/015511 US2019015511W WO2019164638A3 WO 2019164638 A3 WO2019164638 A3 WO 2019164638A3 US 2019015511 W US2019015511 W US 2019015511W WO 2019164638 A3 WO2019164638 A3 WO 2019164638A3
Authority
WO
WIPO (PCT)
Prior art keywords
diamond
quantum
chip
microwave
magnetic sensing
Prior art date
Application number
PCT/US2019/015511
Other languages
French (fr)
Other versions
WO2019164638A2 (en
Inventor
Mohamed Ibrahim
Christopher Foy
Donggyu Kim
Dirk Robert ENGLUND
Ruonan Han
Original Assignee
Massachusetts Institute Of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Institute Of Technology filed Critical Massachusetts Institute Of Technology
Publication of WO2019164638A2 publication Critical patent/WO2019164638A2/en
Publication of WO2019164638A3 publication Critical patent/WO2019164638A3/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/06—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using magneto-optical elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/032—Measuring direction or magnitude of magnetic fields or magnetic flux using magneto-optic devices, e.g. Faraday or Cotton-Mouton effect
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0094—Sensor arrays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G01R33/24—Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G01R33/28—Details of apparatus provided for in groups G01R33/44 - G01R33/64
    • G01R33/32—Excitation or detection systems, e.g. using radio frequency signals
    • G01R33/323—Detection of MR without the use of RF or microwaves, e.g. force-detected MR, thermally detected MR, MR detection via electrical conductivity, optically detected MR
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Computing Systems (AREA)
  • Data Mining & Analysis (AREA)
  • Artificial Intelligence (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Computational Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Power Engineering (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The Zeeman shift of electronic spins in nitrogen-vacancy (NV) centers in diamond has been exploited in lab-scale instruments for ultra-high-resolution, vector-based magnetic sensing. A quantum magnetometer in CMOS utilizing a diamond-nanocrystal layer with NVs or NV-doped bulk diamond on a chip-integrated system provides vector-based magnetic sensing in a compact package. The system performs two functions for the quantum magnetometry: (1) strong generation and efficient delivery of microwave for quantum-state control and (2) optical filtering/detection of spin-dependent fluorescence for quantum-state readout. The microwave delivery can be accomplished with a loop inductor or array of wires integrated into the chip below the nanodiamond layer or diamond. And the wire array can also suppress excitation light using a combination of plasm onic and (optionally) Talbot effects.
PCT/US2019/015511 2018-01-29 2019-01-29 On-chip detection of spin states in color centers for metrology and information processing WO2019164638A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862623151P 2018-01-29 2018-01-29
US62/623,151 2018-01-29
US201862729212P 2018-09-10 2018-09-10
US62/729,212 2018-09-10

Publications (2)

Publication Number Publication Date
WO2019164638A2 WO2019164638A2 (en) 2019-08-29
WO2019164638A3 true WO2019164638A3 (en) 2019-10-31

Family

ID=67392021

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2019/015511 WO2019164638A2 (en) 2018-01-29 2019-01-29 On-chip detection of spin states in color centers for metrology and information processing

Country Status (2)

Country Link
US (1) US10962610B2 (en)
WO (1) WO2019164638A2 (en)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10197515B2 (en) 2014-01-08 2019-02-05 Massachusetts Institute Of Technology Methods and apparatus for optically detecting magnetic resonance
US10901062B2 (en) 2016-05-25 2021-01-26 President And Fellows Of Harvard College Synchronized-readout for narrowband detection of time-varying electromagnetic fields using solid state spins
US10620251B2 (en) 2016-06-28 2020-04-14 Massachusetts Institute Of Technology Spin-based electrometry with solid-state defects
US10712408B2 (en) 2016-11-08 2020-07-14 Massachusetts Institute Of Technology Methods and apparatus for optically detecting magnetic resonance
US11156674B2 (en) 2017-06-06 2021-10-26 President And Fellows Of Harvard College Control and cancellation of spin bath induced dephasing in solid-state ensembles
US10712406B2 (en) * 2018-01-12 2020-07-14 President And Fellows Of Harvard College Quantum metrology based on strongly correlated matter
US11410068B2 (en) * 2018-07-30 2022-08-09 International Business Machines Corporation Quantum processing system including a modulated RF generator with synchronized components
JP2021536565A (en) 2018-08-27 2021-12-27 マサチューセッツ インスティテュート オブ テクノロジー Microwave resonator readout of ensemble solid-state spin sensor
EP3851863A4 (en) * 2018-09-14 2022-08-24 Tokyo Institute of Technology Integrated circuit and sensor system
US12014246B2 (en) 2019-07-17 2024-06-18 President And Fellows Of Harvard College Nanophotonic quantum memory
TW202115625A (en) * 2019-09-18 2021-04-16 澳洲國立大學 Quantum information processing device, assembly, arrangement, system and sensor
WO2021067587A1 (en) 2019-10-02 2021-04-08 X Development Llc Magnetometry based on electron spin defects
US11226381B2 (en) * 2019-10-28 2022-01-18 Palo Alto Research Center Incorporated Compact diamond NV center imager
WO2021112948A1 (en) * 2019-12-02 2021-06-10 Massachusetts Institute Of Technology Optical holographic addressing of atomic quantum bits
JP7445502B2 (en) * 2020-04-07 2024-03-07 矢崎総業株式会社 sensor
JP7514104B2 (en) 2020-04-07 2024-07-10 矢崎総業株式会社 Color center excitation antenna and sensor
CN111650233B (en) * 2020-06-16 2023-01-24 宿迁学院 NV axis three-dimensional space pointing rapid measurement method
DE102020210245B3 (en) * 2020-08-12 2022-02-03 Universität Stuttgart Gradiometer for detecting a gradient field of a physical variable
CN112268878B (en) * 2020-08-19 2022-10-14 西安空间无线电技术研究所 Efficient confirmation method and system for equidirectional color centers in diamond
WO2022056232A1 (en) * 2020-09-10 2022-03-17 X Development Llc Magnetometry based on electron spin defects
US11585870B2 (en) 2020-09-15 2023-02-21 Massachusetts Institute Of Technology Absorption-based diamond spin microscopy on a plasmonic quantum metasurface
US12019130B2 (en) * 2020-11-03 2024-06-25 Massachusetts Institute Of Technology Cryogenic integrated circuits architecture for multiplexed chemical-shift NMR
GB202017477D0 (en) * 2020-11-04 2020-12-16 Univ Warwick Magnetometer
CN112617797B (en) * 2020-12-30 2023-08-08 上海联影医疗科技股份有限公司 Physiological signal detection method applied to magnetic resonance imaging and electronic device
US11531073B2 (en) 2020-12-31 2022-12-20 X Development Llc Fiber-coupled spin defect magnetometry
US11774384B2 (en) 2021-01-15 2023-10-03 X Development Llc Spin defect magnetometry pixel array
CN113219384A (en) * 2021-05-27 2021-08-06 山东英信计算机技术有限公司 Magnetic field detector and magnetic field detection equipment
CN113447863B (en) * 2021-06-04 2022-06-03 电子科技大学 Diamond NV color center magnetometer frequency measurement method facing high-frequency alternating magnetic field
EP4099041A1 (en) 2021-06-04 2022-12-07 Humboldt-Universität zu Berlin Sensor for measuring a magnetic field
EP4119938A1 (en) 2021-07-12 2023-01-18 Wainvam-E Sensor head and measuring device including said sensor head
WO2023244401A1 (en) * 2022-06-17 2023-12-21 Microsoft Technology Licensing, Llc Physical media incorporating colour centres for use in quantum systems
WO2023244402A1 (en) * 2022-06-17 2023-12-21 Microsoft Technology Licensing, Llc Physical media incorporating colour centres for use in quantum systems
WO2024113001A1 (en) * 2022-12-02 2024-06-06 The University Of Sydney Magnetic field sensor

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080048867A1 (en) * 2006-01-18 2008-02-28 Oliver Ronald A Discontinuous-Loop RFID Reader Antenna And Methods
US20130015850A1 (en) * 2011-07-14 2013-01-17 Philipp Lindorfer Die-Sized Atomic Magnetometer and Method of Forming the Magnetometer
US20140077231A1 (en) * 2011-05-24 2014-03-20 Element Six Limited Diamond sensors, detectors, and quantum devices
US9551763B1 (en) * 2016-01-21 2017-01-24 Lockheed Martin Corporation Diamond nitrogen vacancy sensor with common RF and magnetic fields generator
WO2017139683A1 (en) * 2016-02-12 2017-08-17 Yale University Techniques for control of quantum systems and related systems and methods
US20170234941A1 (en) * 2016-02-16 2017-08-17 Renesas Electronics Corporation Magnetometer
US20170343695A1 (en) * 2016-05-31 2017-11-30 Lockheed Martin Corporation Magneto-Optical Detecting Apparatus and Methods
WO2017211504A1 (en) * 2016-06-10 2017-12-14 Robert Bosch Gmbh Sensor apparatus, method for calibrating a sensor apparatus and method for capturing a measured variable

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9632045B2 (en) * 2011-10-19 2017-04-25 The Trustees Of Columbia University In The City Of New York Systems and methods for deterministic emitter switch microscopy
WO2014210486A1 (en) 2013-06-28 2014-12-31 Dirk Robert Englund Wide-field sensing using nitrogen vacancies
US10197515B2 (en) 2014-01-08 2019-02-05 Massachusetts Institute Of Technology Methods and apparatus for optically detecting magnetic resonance
US9779769B2 (en) * 2014-02-19 2017-10-03 Infinitum Solutions, Inc. Integrated optical nanoscale probe
US20170343621A1 (en) 2016-05-31 2017-11-30 Lockheed Martin Corporation Magneto-optical defect center magnetometer
US10620251B2 (en) 2016-06-28 2020-04-14 Massachusetts Institute Of Technology Spin-based electrometry with solid-state defects
US10712408B2 (en) 2016-11-08 2020-07-14 Massachusetts Institute Of Technology Methods and apparatus for optically detecting magnetic resonance

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080048867A1 (en) * 2006-01-18 2008-02-28 Oliver Ronald A Discontinuous-Loop RFID Reader Antenna And Methods
US20140077231A1 (en) * 2011-05-24 2014-03-20 Element Six Limited Diamond sensors, detectors, and quantum devices
US20130015850A1 (en) * 2011-07-14 2013-01-17 Philipp Lindorfer Die-Sized Atomic Magnetometer and Method of Forming the Magnetometer
US9551763B1 (en) * 2016-01-21 2017-01-24 Lockheed Martin Corporation Diamond nitrogen vacancy sensor with common RF and magnetic fields generator
WO2017139683A1 (en) * 2016-02-12 2017-08-17 Yale University Techniques for control of quantum systems and related systems and methods
US20170234941A1 (en) * 2016-02-16 2017-08-17 Renesas Electronics Corporation Magnetometer
US20170343695A1 (en) * 2016-05-31 2017-11-30 Lockheed Martin Corporation Magneto-Optical Detecting Apparatus and Methods
WO2017211504A1 (en) * 2016-06-10 2017-12-14 Robert Bosch Gmbh Sensor apparatus, method for calibrating a sensor apparatus and method for capturing a measured variable

Also Published As

Publication number Publication date
WO2019164638A2 (en) 2019-08-29
US10962610B2 (en) 2021-03-30
US20190235031A1 (en) 2019-08-01

Similar Documents

Publication Publication Date Title
WO2019164638A3 (en) On-chip detection of spin states in color centers for metrology and information processing
Stürner et al. Integrated and Portable Magnetometer Based on Nitrogen‐Vacancy Ensembles in Diamond
US10168393B2 (en) Micro-vacancy center device
Scholten et al. Widefield quantum microscopy with nitrogen-vacancy centers in diamond: Strengths, limitations, and prospects
Tetienne et al. Magnetic-field-dependent photodynamics of single NV defects in diamond: an application to qualitative all-optical magnetic imaging
Glenn et al. Micrometer‐scale magnetic imaging of geological samples using a quantum diamond microscope
Grünberg Nobel Lecture: From spin waves to giant magnetoresistance and beyond
Robbes Highly sensitive magnetometers—a review
US10837953B2 (en) Sensor
Ohshima et al. Creation of silicon vacancy in silicon carbide by proton beam writing toward quantum sensing applications
Ito et al. Development of an optically pumped atomic magnetometer using a K-Rb hybrid cell and its application to magnetocardiography
US20090256561A1 (en) Integrated microchip incorporating atomic magnetometer and microfluidic channel for nmr and mri
JP2014508286A (en) Single package bridge type magnetic field sensor
Huang et al. Magnetoresistive biosensors for direct detection of magnetic nanoparticle conjugated biomarkers on a chip
EP1450177A3 (en) Magnetoresistive device with exchange-coupled structure having half-metallic ferromagnetic Heusler alloy in the pinned layer
US11774384B2 (en) Spin defect magnetometry pixel array
US20100264917A1 (en) Detection of magnetic resonance signals using a magnetoresistive sensor
Lu et al. Responsivity and noise of a wire-bonded CMOS micro-fluxgate sensor
US11774526B2 (en) Magnetometry based on electron spin defects
Sun et al. A superconductor/TMR composite magnetic sensor for pico-Tesla magnetic field detection
EP3816645A1 (en) Compact diamond nv center imager
CN106153895A (en) For detecting the device of bio information
Dimitropoulos et al. A micro-fluxgate sensor based on the Matteucci effect of amorphous magnetic fibers
Al-Baiaty et al. Detection of the ODMR signal of a nitrogen vacancy centre in nanodiamond in propagating surface plasmons
JP7414703B2 (en) Magnetic sensor and inspection equipment

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19758154

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19758154

Country of ref document: EP

Kind code of ref document: A2