WO2019164638A3 - On-chip detection of spin states in color centers for metrology and information processing - Google Patents

On-chip detection of spin states in color centers for metrology and information processing Download PDF

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Publication number
WO2019164638A3
WO2019164638A3 PCT/US2019/015511 US2019015511W WO2019164638A3 WO 2019164638 A3 WO2019164638 A3 WO 2019164638A3 US 2019015511 W US2019015511 W US 2019015511W WO 2019164638 A3 WO2019164638 A3 WO 2019164638A3
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WO
WIPO (PCT)
Prior art keywords
diamond
quantum
chip
microwave
magnetic sensing
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PCT/US2019/015511
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French (fr)
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WO2019164638A2 (en
Inventor
Mohamed Ibrahim
Christopher Foy
Donggyu Kim
Dirk Robert ENGLUND
Ruonan Han
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Massachusetts Institute Of Technology
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Publication of WO2019164638A2 publication Critical patent/WO2019164638A2/en
Publication of WO2019164638A3 publication Critical patent/WO2019164638A3/en

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/06—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using magneto-optical elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/032—Measuring direction or magnitude of magnetic fields or magnetic flux using magneto-optic devices, e.g. Faraday or Cotton-Mouton effect
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0094—Sensor arrays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G01R33/24—Arrangements or instruments for measuring magnetic variables involving magnetic resonance for measuring direction or magnitude of magnetic fields or magnetic flux
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/20—Arrangements or instruments for measuring magnetic variables involving magnetic resonance
    • G01R33/28—Details of apparatus provided for in groups G01R33/44 - G01R33/64
    • G01R33/32—Excitation or detection systems, e.g. using radio frequency signals
    • G01R33/323—Detection of MR without the use of RF or microwaves, e.g. force-detected MR, thermally detected MR, MR detection via electrical conductivity, optically detected MR
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Computing Systems (AREA)
  • Data Mining & Analysis (AREA)
  • Artificial Intelligence (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Computational Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Power Engineering (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The Zeeman shift of electronic spins in nitrogen-vacancy (NV) centers in diamond has been exploited in lab-scale instruments for ultra-high-resolution, vector-based magnetic sensing. A quantum magnetometer in CMOS utilizing a diamond-nanocrystal layer with NVs or NV-doped bulk diamond on a chip-integrated system provides vector-based magnetic sensing in a compact package. The system performs two functions for the quantum magnetometry: (1) strong generation and efficient delivery of microwave for quantum-state control and (2) optical filtering/detection of spin-dependent fluorescence for quantum-state readout. The microwave delivery can be accomplished with a loop inductor or array of wires integrated into the chip below the nanodiamond layer or diamond. And the wire array can also suppress excitation light using a combination of plasm onic and (optionally) Talbot effects.
PCT/US2019/015511 2018-01-29 2019-01-29 On-chip detection of spin states in color centers for metrology and information processing WO2019164638A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201862623151P 2018-01-29 2018-01-29
US62/623,151 2018-01-29
US201862729212P 2018-09-10 2018-09-10
US62/729,212 2018-09-10

Publications (2)

Publication Number Publication Date
WO2019164638A2 WO2019164638A2 (en) 2019-08-29
WO2019164638A3 true WO2019164638A3 (en) 2019-10-31

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Family Applications (1)

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PCT/US2019/015511 WO2019164638A2 (en) 2018-01-29 2019-01-29 On-chip detection of spin states in color centers for metrology and information processing

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US (1) US10962610B2 (en)
WO (1) WO2019164638A2 (en)

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WO2018052497A2 (en) 2016-05-25 2018-03-22 President And Fellows Of Harvard College Synchronized-readout for narrowband detection of time-varying electromagnetic fields using solid state spins
WO2018005627A1 (en) 2016-06-28 2018-01-04 Massachusetts Institute Of Technology Spin-based electrometry with solid-state defects
WO2018089455A1 (en) 2016-11-08 2018-05-17 Massachusetts Institute Of Technology Methods and apparatus for optically detecting magnetic resonance
US11156674B2 (en) 2017-06-06 2021-10-26 President And Fellows Of Harvard College Control and cancellation of spin bath induced dephasing in solid-state ensembles
US10712406B2 (en) * 2018-01-12 2020-07-14 President And Fellows Of Harvard College Quantum metrology based on strongly correlated matter
US11410068B2 (en) * 2018-07-30 2022-08-09 International Business Machines Corporation Quantum processing system including a modulated RF generator with synchronized components
EP3844517A4 (en) 2018-08-27 2022-10-05 Massachusetts Institute of Technology Microwave resonator readout of an ensemble solid state spin sensor
JP7477878B2 (en) 2018-09-14 2024-05-02 国立大学法人東京工業大学 Integrated circuit and sensor system
WO2021011765A1 (en) 2019-07-17 2021-01-21 President And Fellows Of Harvard College Nanophotonic quantum memory
TW202115625A (en) * 2019-09-18 2021-04-16 澳洲國立大學 Quantum information processing device, assembly, arrangement, system and sensor
EP4014056A1 (en) 2019-10-02 2022-06-22 X Development LLC Magnetometry based on electron spin defects
US11120360B2 (en) 2019-12-02 2021-09-14 Massachusetts Institute Of Technology Optical holographic addressing of atomic quantum bits
JP7514104B2 (en) 2020-04-07 2024-07-10 矢崎総業株式会社 Color center excitation antenna and sensor
JP7445502B2 (en) 2020-04-07 2024-03-07 矢崎総業株式会社 sensor
CN111650233B (en) * 2020-06-16 2023-01-24 宿迁学院 NV axis three-dimensional space pointing rapid measurement method
DE102020210245B3 (en) * 2020-08-12 2022-02-03 Universität Stuttgart Gradiometer for detecting a gradient field of a physical variable
CN112268878B (en) * 2020-08-19 2022-10-14 西安空间无线电技术研究所 Efficient confirmation method and system for equidirectional color centers in diamond
US11774526B2 (en) 2020-09-10 2023-10-03 X Development Llc Magnetometry based on electron spin defects
US11585870B2 (en) 2020-09-15 2023-02-21 Massachusetts Institute Of Technology Absorption-based diamond spin microscopy on a plasmonic quantum metasurface
US12019130B2 (en) * 2020-11-03 2024-06-25 Massachusetts Institute Of Technology Cryogenic integrated circuits architecture for multiplexed chemical-shift NMR
GB202017477D0 (en) * 2020-11-04 2020-12-16 Univ Warwick Magnetometer
CN112617797B (en) * 2020-12-30 2023-08-08 上海联影医疗科技股份有限公司 Physiological signal detection method applied to magnetic resonance imaging and electronic device
US11531073B2 (en) 2020-12-31 2022-12-20 X Development Llc Fiber-coupled spin defect magnetometry
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CN113219384A (en) * 2021-05-27 2021-08-06 山东英信计算机技术有限公司 Magnetic field detector and magnetic field detection equipment
EP4099041A1 (en) 2021-06-04 2022-12-07 Humboldt-Universität zu Berlin Sensor for measuring a magnetic field
CN113447863B (en) * 2021-06-04 2022-06-03 电子科技大学 Diamond NV color center magnetometer frequency measurement method facing high-frequency alternating magnetic field
EP4119938A1 (en) 2021-07-12 2023-01-18 Wainvam-E Sensor head and measuring device including said sensor head
WO2023244402A1 (en) * 2022-06-17 2023-12-21 Microsoft Technology Licensing, Llc Physical media incorporating colour centres for use in quantum systems
WO2023244401A1 (en) * 2022-06-17 2023-12-21 Microsoft Technology Licensing, Llc Physical media incorporating colour centres for use in quantum systems
US20240168106A1 (en) * 2022-11-21 2024-05-23 Korea Research Institute Of Standards And Science Method and apparatus for measuring magnetic field and temperature using diamond nitrogen vacancy sensor
WO2024113001A1 (en) * 2022-12-02 2024-06-06 The University Of Sydney Magnetic field sensor

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US20190235031A1 (en) 2019-08-01
US10962610B2 (en) 2021-03-30
WO2019164638A2 (en) 2019-08-29

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