WO2019156296A1

WO2019156296A1 - Plasma treatment device comprising boron carbide, and manufacturing method therefor

Info

Publication number: WO2019156296A1
Application number: PCT/KR2018/008595
Authority: WO
Inventors: 황성식; 선호정; 이재범; 오준록; 김현정; 민경열; 김경인
Original assignee: 에스케이씨솔믹스 주식회사
Priority date: 2017-02-14
Filing date: 2018-07-30
Publication date: 2019-08-15
Also published as: KR20180093814A; KR20200020764A

Abstract

Disclosed are a plasma treatment device comprising a boron carbide coating layer, and a manufacturing method therefor, the device having excellent corrosion resistance against plasma, ensuring the uniformity of plasma distribution, improving electrical conductivity and thermal conductivity, and having a simple structure. The device and the method comprise: a chamber having a reaction space for plasma treatment; and a component positioned inside the chamber and coming in contact with plasma, wherein the component is boron carbide having corrosion resistance against plasma and having a volume resistivity of 10⁵-10^-5Ωㆍcm.

Description

Plasma processing apparatus comprising boron carbide and its manufacturing method

The present invention relates to a plasma processing apparatus and a manufacturing method thereof, and more particularly, to a plasma apparatus and a manufacturing method including a component made of boron carbide having high corrosion resistance to plasma.

The plasma processing apparatus arranges an upper electrode and a lower electrode in a chamber, mounts a substrate such as a semiconductor wafer or a glass substrate on the lower electrode, and applies electric power between both electrodes. Electrons accelerated by an electric field between the electrodes, electrons emitted from the electrodes, or heated electrons cause ionization collision with molecules of the processing gas, thereby generating a plasma of the processing gas. Active species such as radicals and ions in the plasma perform the desired microfabrication, for example etching, on the substrate surface. In recent years, design rules in the manufacture of microelectronic devices and the like have become increasingly finer, and in particular, plasma etch is required to have higher dimensional accuracy, and thus significantly higher power is used than in the prior art. The plasma processing apparatus includes components such as an edge ring, a focus ring, and a showerhead that are affected by plasma.

In the case of the edge ring, when the power is increased, the center part is maximized on the substrate and the edge part is the lowest on the substrate due to the wavelength effect in which standing waves are formed and the skin effect in which the electric field is concentrated at the center part of the electrode surface. Inhomogeneity deepens. If the plasma distribution is uneven on the substrate, the plasma processing becomes inconsistent and the quality of the microelectronic device is degraded. Korean Patent Publication No. 2009-0101129 seeks to achieve uniformity of plasma distribution by placing a dielectric between the susceptor and the edge portion. However, the patent has a problem in that the structure is complicated and precise design between the dielectric and the edge portion is difficult.

The problem to be solved by the present invention is to provide a plasma processing apparatus and a manufacturing method comprising boron carbide excellent in corrosion resistance to plasma and ensure uniformity of plasma distribution, improve electrical conductivity and thermal conductivity, and simple structure have.

A plasma processing apparatus including boron carbide for solving one problem of the present invention includes a chamber forming a reaction space for plasma processing, and a component located in the chamber and in contact with the plasma. At this time, the component is made of boron carbide with plasma corrosion resistance, the boron carbide has a volume resistivity 10 ⁵ ~ 10 ^-5 Ω · cm.

In the device of the present invention, the boron carbide is a compound based on boron and carbon. The boron carbide may be a single phase or a complex phase. The single phase may comprise stoichiometric phases of boron and carbon and non-stoichiometric phases outside of the stoichiometric composition. The single phase or complex phase may include a solid solution to which impurities are added. The component can be any one selected from an edge ring, a focus ring or a showerhead. The component is an edge ring that squeezes the edge of the substrate seated in the susceptor, and the distribution of the plasma extends beyond the edge of the substrate.

In a preferred device of the invention, the part may be in sintered bulk form and may be in physical or chemical vapor deposition form. The part may be bonded to one surface of the base material, and may include a boron carbide plate having a critical thickness of 0.3 mm. The component may include a boron carbide coating layer positioned on one surface of the base material and having a critical thickness of 0.3 mm, and may seal the base material and include a boron carbide coating layer having a critical thickness of 0.3 mm. The base material may be made of any one selected from metals, ceramics or composites thereof.

Another aspect of the present invention provides a method for manufacturing a plasma processing apparatus including boron carbide, the method including: a chamber forming a reaction space for plasma processing; and a component located in the chamber and in contact with the plasma. In the manufacturing method, the component is boron carbide having plasma corrosion resistance and having a volume resistivity of 10 ⁵ to 10 ⁻⁵ Ω · cm.

In the method of the invention, the part can be produced by sintering and can be produced by physical or chemical vapor deposition. The part may be formed by bonding a boron carbide plate having a critical thickness of 0.3 mm to a base material. The boron carbide plate (plate) may be made by processing the boron carbide in a bulk form 0.3mm critical thickness. The bonding may be implemented by inducing diffusion at the interface by applying heat and pressure to the boron carbide and the base material, using a metal bonding agent, or applying a bonding tape. The part may be formed by forming a boron carbide coating layer having a critical thickness of 0.3 mm on the base material. The part may be formed by wrapping the base material with a boron carbide coating layer having a critical thickness of 0.3 mm. The boron carbide coating layer is preferably formed by spraying or spraying.

According to the plasma processing apparatus and manufacturing method including boron carbide of the present invention, by using a component containing boron carbide excellent in plasma corrosion resistance and imparting electrical conductivity, it is excellent in corrosion resistance to plasma and uniformity of plasma distribution. It is secured and the structure is simple.

1 and 2 are schematic views showing a plasma processing apparatus equipped with a plasma component according to the present invention.

3 is a cross-sectional view showing a first component applied to the plasma apparatus according to the present invention.

4 is a cross-sectional view showing a second component applied to the plasma apparatus according to the present invention.

5 is a cross-sectional view showing a third component applied to the plasma apparatus according to the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments described below may be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art.

An embodiment of the present invention provides a plasma processing apparatus and a manufacturing method which are excellent in corrosion resistance to plasma, secure uniformity of plasma distribution, and simple structure by using boron carbide. Such a plasma processing apparatus includes components such as an edge ring, a focus ring, and a showerhead that are affected by plasma, and here, the edge ring will be described as an example. To this end, a plasma component will be described in detail with respect to the edge ring of the present invention, and a method of manufacturing the plasma component will be described in detail.

1 and 2 are diagrams schematically showing a plasma processing apparatus equipped with a plasma component according to an embodiment of the present invention. In addition to the structure of the apparatus presented within the scope of the present invention, it can be applied to the plasma processing apparatus of various structures.

1 and 2, the treatment apparatus of the present invention includes a chamber 10, a susceptor 20, a showerhead 30, and an edge ring 40. Here, the susceptor 20, the shower head 30, the edge ring 40, and the like are plasma components AP affected by the plasma. The chamber 10 defines a reaction space, and the susceptor 20 mounts the substrate 50 on the upper surface and moves up and down. In some cases, the susceptor 20 may be fixed and not move. Here, the vertical motion is taken as an example. The shower head 30 is positioned above the susceptor 20 and sprays a process gas onto the substrate 50. The shower head 30 has a gas supply pipe 12 connected through the chamber 10 to introduce the process gas from the outside. The shower head 30 includes a buffer space 31 for uniformly dispersing the inside of the shower head 30 before the process gas introduced through the gas supply pipe 12 is injected, and a nozzle part 32 composed of numerous through holes. It includes. The edge ring 40 is installed on the inner wall of the chamber 10 and is located on the ring support 41.

Outside the chamber 10, an RF power source 16 for supplying RF power for generating plasma is connected to a plasma electrode or an antenna. The connection scheme is various, and as shown, the plasma electrode is integrally formed with the shower head 30, and the RF power source 16 is provided to the gas supply pipe 12 so that the RF power is applied to the center of the electrode. ) Can be connected. In order to control energy of the plasma incident on the substrate 50, a separate RF power source may also be applied to the susceptor 20. Although not shown, the susceptor 20 may include a heater for preheating or heating the substrate 50, a lift pin for mounting the substrate 50, and the like.

When the substrate 50 is placed in the susceptor 20, the susceptor 20 is raised to the position of the plasma processing step. The edge ring 40 rises together while pressing the edges of the substrate 50. Raising the susceptor 20 prevents the exhaust port 14 from adversely affecting the process uniformity. When the substrate 50 is placed in the process position, the process gas is injected through the shower head 30, and then RF power is applied to convert the process gas into plasma active species having strong reactivity. The active paper may be deposited or etched on the substrate 50, and the process gas may be discharged at a constant flow rate through the exhaust port 14 during the process. After the treatment process is performed for a predetermined time, residual gas is discharged to the exhaust port 14. Subsequently, the susceptor 20 is lowered and the substrate 50 is carried out from the chamber 10 to the outside.

Boron carbide applied to the present invention is represented by B ₄ C, the third high strength material after diamond, cubic boron nitride, and excellent in chemical resistance and corrosion resistance. On the other hand, plasma corrosion resistance is affected by the bonding force of the parts. That is, the stronger the bonding force, the higher the corrosion resistance, and boron carbide has a high covalent bond, and thus the bonding force is large, so the plasma corrosion resistance is excellent.

In addition, other boron carbide compounds may be included within the scope of the present invention. That is, boron carbide refers to all compounds based on boron and carbon. Boron carbide of the present invention may be either a single phase or a complex phase. Here, the boron carbide single phase includes both the stoichiometric phase of boron and carbon and the nonstoichiometric phase deviated from the stoichiometric composition, and the complex phase is one of the compounds based on boron and carbon. The boron carbide of the present invention is a mixture of at least two in a predetermined ratio, and in addition, the boron carbide of the present invention is added to impurities in a single phase or a complex phase of the boron carbide to form a solid solution or inevitably added in the process of preparing boron carbide. This includes all cases where impurities are mixed.

Hereinafter, the influence of the plasma around the edge ring 40 in the plasma component AP will be described. When the power to form the plasma is high, the center of the substrate 50 is maximized and the edge is generally the lowest due to the wavelength effect in which standing waves are formed in the chamber 10 or the skin effect in which the electric field is concentrated at the center of the electrode surface. The plasma distribution on the substrate 50 becomes nonuniform. If the plasma distribution is uneven on the substrate 50, the plasma processing becomes inconsistent and the quality of the microelectronic device is degraded. Here, the plasma distribution refers to a state in which a plasma is applied on the substrate 50 and the boron carbide edge ring 40, and the distribution indicates the plasma density at each point of the substrate 50 and the boron carbide edge ring 40. It is associated with the straightness towards the substrate 50.

Near the edge ED of the substrate 50, the difference in volume resistivity with the boron carbide edge ring 40 has a significant impact on the plasma distribution uniformity. Here, the uniformity refers to the degree of change in the plasma distribution. When the uniformity is small, the plasma distribution changes abruptly, and when the uniformity is large, the plasma distribution changes slowly. To this end, the volume resistivity of the boron carbide edge ring 40 is preferably similar or lower than the volume resistivity of the substrate 50. In this case, since the plasma distribution extends beyond the edge of the substrate 50 to the boron carbide edge ring 40, the edge of the substrate 50 has a relatively high uniformity. The uniformity means that the plasma density and the straightness toward the substrate 50 are excellent. In the drawing, the state that deviates from the edge of the substrate 50 is expressed as near edge ED.

The volume resistivity of the boron carbide edge ring 40 according to the embodiment of the present invention is similar to or smaller than the substrate 50 can be described in the following aspects. If the volume resistivity of the boron carbide edge ring 40 is similar or smaller than the substrate 50, the plasma distribution extends beyond the edge of the substrate 50 to the boron carbide edge ring 40. Accordingly, the volume resistivity of the boron carbide edge ring 40 of the present invention extends from the edge of the substrate to the boron carbide edge ring 40 so that the plasma distribution over the entire substrate 50 is uniform even at the edge of the substrate 50. It can be said that. Such volume resistivity may be defined as extending the plasma distribution beyond the edge of the substrate 50 and extending the boron carbide edge ring 40.

Volume resistivity of 10 ⁵ to 10 of boron carbide edge ring 40 of the present invention ^- ⁵ Ω cm and is based on the technical idea for making uniform the plasma distribution in the edge of the substrate 50. Accordingly, the volume resistivity cannot be obtained through simple repeated experiments without considering the technical idea. In the above, the relationship between the volume resistivity of the boron carbide edge ring 40 and the substrate 50 has been described taking the edge ring as an example. However, in the case of other parts such as showerheads, the view that the volume resistivity of boron carbide improves plasma corrosion resistance is the same.

Hereinafter, a method of manufacturing a plasma component AP including boron carbide (BC) will be described. Boron carbide plasma component (AP) is produced by sintering and physical or chemical vapor deposition, the first method to be itself a bulk component, the second method of bonding to the base material and the third method of coating on the base material Can be done. Here, the bulk is distinguished from the coating layer of the third method coated on the surface of the base material. In addition, physical or chemical vapor deposition is the production of boron carbide plasma component (AP) using a source material, it can be distinguished from other methods (eg, sintering). The first to third methods presented herein are merely to provide examples appropriate for each, and therefore include other methods within the scope of the present invention.

Boron Carbide Plasma Parts by Sintering

The sintering sinters the boron carbide powder, or the boron and carbon mixed powder in a vacuum or inert gas atmosphere. The inert gas may be any known inert gas, and preferably argon, nitrogen, and the like. The boron carbide plasma component produced by sintering as described above is a sintered body in bulk form.

Boron Carbide Plasma Parts by Physical or Chemical Vapor Deposition

In the chemical vapor deposition, the boron source and the carbon source are reacted to be deposited on the base material under certain conditions, grown, and subsequently, the base material is removed. For example, using B ₂ H ₆ as the boron precursor, CH ₄ as the carbon precursor, the deposition temperature can be deposited by a chemical vapor deposition apparatus at 500 to 1500 ° C. Physical vapor deposition is sputtered with the target itself as boron carbide to allow boron carbide to grow on the base material and then remove the base material. As such, the boron carbide parts manufactured by physical or chemical vapor deposition are bulk in distinct form from later coatings.

The bonding is a combination of the boron carbide bulk of the sintering or chemical vapor deposition described above to the base material, the part (AP) is made by processing the boron carbide bulk in the form of a plate (0.33mm) critical thickness by polishing or the like. By the above processing, a boron carbide plate is formed. The bonding is not necessarily limited thereto, but may be implemented by inducing diffusion at an interface by applying pressure between the boron carbide and the base metal at a high temperature below the melting point. In the bonding, a metal such as indium may be bonded with a bonding agent, or other bonding tape may be used.

The plasma component AP may be variously modified by the coating. The plasma component generated by the coating can be seen as a modification of the plasma component AP described in FIGS. 1 and 2. Accordingly, the plasma component manufactured by the coating will be referred to as first to third components AP1, AP2, and AP3. 3 is a cross-sectional view showing the first component AP1 applied to the plasma apparatus according to the embodiment of the present invention. In this case, the plasma apparatus will be described with reference to FIGS. 1 and 2.

According to FIG. 3, the first component AP1 includes a base material 60 and a boron carbide coating layer 61 positioned on one surface of the base material 60. The base material 60 is preferably a ceramic material having corrosion resistance to the plasma, but may be a metal or a composite thereof. This is because the base material 60 is located in an environment not affected by the plasma. The critical thickness of the boron carbide coating layer 61 of the present invention is a thick film of 0.3 mm. The coating of boron carbide to be specified in the present invention is composed of a corrosion-resistant material only the maximum thickness range allowed for etching, rather than the entire base material 60 is composed of a corrosion-resistant material to constitute a plasma processing apparatus. Through this, the coating is carried out to reduce the manufacturing cost of the product and to facilitate the manufacturing process. That is, one of the cases in which two heterogeneous bulk materials are joined by a coating method. As such, the coating layer 61 having a thickness in the maximum range allowed for etching may be referred to as a thick film coating layer 61.

The corrosion resistant plate 61 according to the embodiment of the present invention has a critical thickness. The reason is at least as follows. First, when the edge ring 40 including the corrosion resistant plate 61 is initially mounted on the etching equipment, the surface of the corrosion resistant plate 61 is in line with the surface of the substrate 50. The substrate 50 is replaced for each subsequent etching process but the edge ring 40 remains the same. As the etching process is repeated, a step occurs between the surface of the substrate 50 and the surface of the corrosion resistant plate 61 and the step continuously increases.

Second, as the pattern of the device becomes finer, the aspect ratio of the etching pattern continues to increase, and recently, it has almost reached its limit. For etching corresponding to this aspect ratio, the plasma power must be increased. In plasma etching, chemical etching by chemical reaction and physical etching by physical ion collision are mixed. However, as the plasma power increases, the strength of the physical etching becomes relatively larger than the chemical etching and becomes overwhelming at a predetermined power or more. Therefore, it becomes more difficult to maintain the corrosion resistance of the corrosion resistant plate 61.

Third, when the level difference between the surface of the substrate 50 and the surface of the corrosion resistant plate 61 is greater than or equal to a predetermined thickness, the direction of active ions rushing to the edge of the substrate 50 is from the direction perpendicular to the surface of the substrate 50. Gradually the direction becomes oblique. By the diagonal etching ions, an etching pattern such as an etching hole or a trench is formed in the diagonal direction on the substrate 50. In the diagonal direction, misalignment occurs from the pattern of the underlying layer of the etching layer, thereby reducing the yield of the device. Therefore, the maximum etching thickness and the maximum number of substrates 50 that are the allowable misalignment should be etched to set the minimum etching thickness limit for maintaining the productivity of the equipment.

Considering the reasons mentioned above, the thickness for general corrosion resistance should be more than 0.3mm. This thickness is called the critical thickness. Of course, the plasma thickness of the boron carbide bulk is generally applied to a thickness of less than 3mm, but may be applied to more than the thickness if necessary. This is because the thickness of the plasma component AP requires a critical thickness which is the minimum thickness for corrosion resistance. The critical thickness is designed in consideration of the technical idea of the present invention, which cannot be obtained by repeated experiments of the plasma component (AP).

The method of coating the boron carbide coating layer 61 with a thick film is not limited, and there are chemical vapor deposition, physical vapor deposition, room temperature spraying, low temperature spraying, aerosol spraying, plasma spraying, and the like. In the chemical vapor deposition method, for example, using a boron precursor B ₂ H ₆ , the deposition temperature can be deposited by a chemical vapor deposition apparatus to 500 ~ 1500 ℃. In the physical vapor deposition method, for example, the boron carbide target may be sputtered in an argon (Ar) gas atmosphere. The coating layer 61 formed by the chemical vapor deposition method and the physical vapor deposition method may be referred to as a thick film CVD boron carbide coating layer 61 and a thick film PVD boron carbide coating layer 61, respectively.

In the normal temperature spraying method, the boron carbide powder is sprayed onto the base material 60 through a plurality of discharge ports by applying pressure to the boron carbide powder at room temperature to form the boron carbide coating layer 61. In this case, the boron carbide powder may use a vacuum granule form. In the low temperature spraying method, the boron carbide powder is sprayed on the base material 60 through a plurality of discharge ports by the flow of compressed gas at a temperature higher than about 60 ° C. than the normal temperature to form the boron carbide coating layer 61. The aerosol injection method is to form aerosol by mixing the boron carbide powder in a volatile solvent such as polyethylene glycol, isopropyl alcohol and the like, and then spray the aerosol on the base material 60 to form a boron carbide coating layer 61. The plasma spraying method injects boron carbide powder into a high temperature plasma jet to spray the powder melted in the plasma jet to the base material 60 at high speed to form the boron carbide coating layer 61.

4 is a cross-sectional view illustrating the second component AP2 applied to the plasma apparatus according to the embodiment of the present invention. In this case, the second part AP2 is the same as the first part AP1 except that the form in which the boron carbide coating layer 62 covers the base material 60 is different. In this case, the plasma apparatus will be described with reference to FIGS. 1 and 2, and the second component AP2 is one of the components affected by the plasma as described above.

According to FIG. 4, the boron carbide coating layer 62 of the second component AP2 seals the base material 60. The sealing means plasma sealing that covers the base material 60 to such an extent that the base material 60 cannot be damaged by the plasma. For example, when the cross section of the base material 60 is a quadrangular shape having a top surface, a bottom surface and a side surface, the top surface is a plasma exposure surface directly exposed to plasma, and the bottom surface is a surface opposite to the top surface, and the side surface is It can be seen as a surface connecting the top and bottom surfaces. The boron carbide coating layer 62 of the second component 4b covers the plasma exposed surface, the side surface and the bottom surface. This seals the portion of the base material 60 that may be damaged by the plasma. The base material 60 may be made of any one selected from metal, ceramic, or a composite thereof.

On the other hand, if the base material 60 is sealed by the boron carbide coating layer 62, the base material 60 may not necessarily have plasma corrosion resistance. The base material 60 may freely apply a material having good electrical conductivity and thermal conductivity, such as a metal material, regardless of plasma corrosion resistance. In addition, the base material 60 may be made of a material having good shock absorption. For example, yttria, which reacts with plasma to form solid residues, may be applied, or a material having good electrical and thermal conductivity such as aluminum or copper may be used. Accordingly, in the case of a metal which is likely to be corroded by the plasma, it can be used as the base material 60 of the second component AP2 without being limited thereto. In this way, when the base material 60 is sealed with the boron carbide coating layer 62, the degree of freedom of selection of the base material 60 can be greatly increased as compared with the unsealed first part AP1.

5 is a cross-sectional view showing a third component AP3 applied to a plasma apparatus according to an embodiment of the present invention. In this case, the third component AP3 is the same as the first component AP1 and the second component AP2 except that the primer layer 63 is disposed between the boron carbide coating layer 61 and the base material 60. In this case, the plasma apparatus will be described with reference to FIGS. 1 and 2, and the third component AP3 is one of the components affected by the plasma as described above, and includes an edge ring and the like.

Referring to FIG. 5, the primer layer 63 of the third component AP3 increases the bonding force between the boron carbide coating layer 61 and the base material 60. The primer layer 63 may be applied to, for example, a material including tungsten, nickel, cobalt, etc. in consideration of the relationship between the bonding strength between the boron carbide coating layer 61 and the base material 60. For example, the primer layer 63 is necessarily limited thereto, but may be coated with a binder with a powder composed of at least one selected from an alloy including boron, a ceramic containing boron, and a mixture thereof. The primer layer 63 is necessarily limited thereto, but a material made of at least one selected from an alloy including boron, a ceramic containing boron, and a mixture thereof may be formed as a single layer or a multilayer.

In the case of the first part AP1, a primer layer 63 is present between the base material 60 and the boron carbide coating layer 61, and in the case of the second part AP2, the base material 60 and the boron carbide coating layer. It is between 62. As such, when the primer layer 63 is present, the bonding force between the boron carbide coating layers 61 and 62 and the base material 60 is increased, so that the boron carbide coating layers 61 and 62 are not damaged by the impact of plasma. .

Hereinafter, in order to explain in detail the physical properties of the plasma component of the present invention, the following examples are presented. However, the present invention is not particularly limited to the following examples. The electrical conductivity (Ωcm) of the components shown in Examples and Comparative Examples was measured by model name LORESTA-GP MCP-T610 (manufacturer, Mitsubish), and thermal conductivity ((W / m · k) was model name LFA 467-TMA 402 F3 ( Manufacturer (NETZSCH), and the etching rate (%) was compared with the change in thickness after etching with CF ₄ gas plasma.

0.1-60 wt% of the liquid phenolic resin was mixed with boron carbide powder to the boron carbide weight to prepare a sintered body having a thickness of Φ50x10Tmm produced by sintering at 2,200 ° C. or more. The electrical conductivity (Ω · cm) and thermal conductivity ((W / m · k) were measured by the above-described apparatus, and the relative density was measured.

Comparative Example 1

Boron carbide was prepared in the same manner as in Example 1 by increasing the supply amount of the liquid phenol resin as a carbon source to 40% by weight, and the electrical conductivity (Ω · cm) and thermal conductivity ((W / m · k) were measured by the above-described apparatus. And the relative density was measured.

Comparative Example 2

60 wt% of the phenol resin was mixed with respect to the weight of boron carbide, prepared as in Example 1, and the electrical conductivity (Ω · cm) and thermal conductivity ((W / m · k) were measured by the apparatus described above, and the relative density was measured. Measured.

Table 1 shows the electrical conductivity (Ω · and thermal conductivity ((W / m · k)) of Example 1 and Comparative Examples 1 and 2 of the present invention, where electrical conductivity (Ω · cm) and thermal conductivity ((W / m · k) is an average value obtained by multiple measurements, not one measurement. For convenience, electrical conductivity is expressed as a power of 10.

구분division	페놀 수지 함량(중량%)Phenolic Resin Content (wt%)	전기전도도(Ωㆍ㎝)Electrical Conductivity (Ω · cm)	열전도율(W/mㆍk)Thermal Conductivity (W / m · k)	상대밀도(%)Relative Density (%)	식각률(%)Etch Rate (%)
비교예1Comparative Example 1	0.10.1	10^-1 10 ^-1	2222	63.863.8	7676
비교예2Comparative Example 2	5.05.0	10^-1 10 ^-1	2323	65.365.3	7575
실시예1Example 1	1010	10^-1 10 ^-1	2727	77.477.4	7171
실시예2Example 2	2020	10^-1 10 ^-1	2929	85.085.0	6868
실시예3Example 3	4040	10⁰ 10 ⁰	3232	90.890.8	6666
실시예4Example 4	6060	10⁰ 10 ⁰	3232	98.098.0	5757

Referring to Table 1, the electrical conductivity and the thermal conductivity of Examples 1 to 4 and Comparative Examples 1 to 2 are similar to each other, and there is no comparable element. Specifically, the electrical conductivity of Example 1 was about 10 ⁻¹ , the thermal conductivity was 27, the electrical conductivity of Comparative Examples 1 and 2 was 10 ⁻¹ , and the thermal conductivity was 22. By the way, when the etching rate of Comparative Example 1 is 76%, the etching rates of Examples 1 to 4 of the present invention were 71%, 68%, 66% and 57%, respectively. That is, it was confirmed that the etching rate is independent of the electrical conductivity and the thermal conductivity and is affected by the relative density. The relative density of the present invention was greater than 63% and less than 99%. As described above, the present invention improves the sintered density of boron carbide by adding phenol resin and the like, thereby achieving excellent corrosion resistance to plasma compared to conventional boron carbide. On the other hand, the difference in etching rate is remarkable as the plasma power increases.

In the embodiment of the present invention, a phenol resin is used as the carbon source, but the carbon source is supplied as amorphous carbon by pyrolysis, and thus, the same technical concept is applied to other liquid or solid carbon sources other than the phenol resin within the scope of the present invention. Apply. The difference between the etching rate and the relative density is slightly different depending on the weight of the carbon source within the scope of the present invention.

Corrosion resistance of plasma component parts made of boron carbide according to an embodiment of the present invention increases as the relative density increases.

As mentioned above, although the present invention has been described in detail with reference to preferred embodiments, the present invention is not limited to the above embodiments, and various modifications may be made by those skilled in the art within the scope of the technical idea of the present invention. It is possible.

* Explanation of the sign

10; Chamber 12; Gas supply pipe

20; Susceptor 30; Shower head

40; Edge ring 41; Ring support

50; Substrate 60; Base material

61, 62; Boron Carbide Coating Layer

63; Primer layer AP; Plasma components

AP1, AP2, AP3; First to third plasma components

Claims

A chamber forming a reaction space for plasma treatment: and

A component located inside the chamber and in contact with the plasma;

The parts are made of a boron carbide in the plasma corrosion resistance, wherein the boron carbide has a volume resistivity of 10 5 to 10 - a plasma processing apparatus including a boron carbide, characterized in that Ω and having a 5 cm.
The plasma processing apparatus of claim 1, wherein the boron carbide is a compound based on boron and carbon.
The plasma processing apparatus of claim 1, wherein the boron carbide is a single phase or a complex phase.
4. The plasma processing apparatus of claim 3, wherein the single phase comprises a stoichiometric phase of boron and carbon and a nonstoichiometric phase outside of the stoichiometric composition.
The plasma processing apparatus of claim 3, wherein the single phase or the composite phase comprises a solid solution in which impurities are added to the single phase or the composite phase.
The plasma processing apparatus of claim 1, wherein the component is any one selected from an edge ring, a focus ring, and a showerhead.
The plasma processing apparatus of claim 1, wherein the component is an edge ring that compresses an edge of a substrate placed on a susceptor, and the distribution of the plasma extends beyond an edge of the substrate.
The plasma processing apparatus of claim 1, wherein the component is in a sintered bulk form.
2. The plasma processing apparatus of claim 1, wherein the component is in the form of a physical or chemical vapor deposited bulk.
The plasma processing apparatus of claim 1, wherein the component comprises a boron carbide plate bonded to one surface of the base material and having a critical thickness of 0.3 mm.
The plasma processing apparatus of claim 1, wherein the component comprises a boron carbide coating layer disposed on one surface of the base material and having a critical thickness of 0.3 mm.
The plasma processing apparatus of claim 1, wherein the component includes a boron carbide coating layer having a critical thickness of 0.3 mm while sealing the base material.
The plasma processing apparatus according to any one of claims 11 to 12, wherein the base material is any one selected from a metal, a ceramic, or a composite thereof.
A chamber forming a reaction space for plasma treatment: and

In the method of manufacturing a plasma device comprising a component located in the chamber and in contact with the plasma,

The components and the plasma corrosion resistance, volume resistivity of 10 5 to 10 - The method of the plasma processing apparatus comprising a boron carbide, characterized in that the boron carbide and 5 Ω cm.
15. The method of claim 14, wherein the component is manufactured by sintering.
15. The method of claim 14, wherein the component is manufactured by physical or chemical vapor deposition.
15. The method of claim 14, wherein the component is formed by bonding a boron carbide plate having a critical thickness of 0.3 mm to a base material.
18. The method of claim 17, wherein the boron carbide plate is formed by processing bulk boron carbide to a critical thickness of 0.3 mm.
18. The plasma processing apparatus of claim 17, wherein the bonding is performed by applying heat and pressure to the boron carbide and the base material to induce diffusion at an interface, bonding with a metal bonding agent, or bonding with a bonding tape. Manufacturing method.
15. The method of claim 14, wherein the component is formed by forming a boron carbide coating layer having a critical thickness of 0.3 mm on a base material.
15. The method of claim 14, wherein the component is formed by wrapping a base material with a boron carbide coating layer having a critical thickness of 0.3 mm.
22. The method according to any one of claims 20 and 21, wherein the boron carbide coating layer is formed by spraying or spraying.