KR101849037B1 - Parts for plasma processing apparatus having tungsten based corrosion-resisting plate and method of manufacturing the parts - Google Patents

Abstract

Disclosed are parts for a plasma apparatus which has excellent corrosion resistance to plasma, ensures uniformity of plasma distribution, increases electrical conductivity and thermal conductivity, and includes a corrosion-resisting plate having a simple structure, and a manufacturing method thereof. In a chamber forming a reaction space for plasma processing, and a part located in the chamber and in contact with the plasma, the parts include a bonding part for bonding the corrosion-resisting plate, made of tungsten which has the critical thickness of 0.3 mm and the volume resistivity of 10^3-10^(-6) and a tungsten compound, to a base material.

Description

TECHNICAL FIELD [0001] The present invention relates to a tungsten-based corrosion-resisting plate and method for manufacturing the parts,

More particularly, the present invention relates to a component having a tungsten-based inner plate made of tungsten and a tungsten-based compound having high corrosion resistance to plasma, and a method of manufacturing the same.

In the plasma processing apparatus, an upper electrode and a lower electrode are disposed in a chamber, and a substrate such as a semiconductor wafer or a glass substrate is mounted on the lower electrode, and electric power is applied between both electrodes. Electrons accelerated by an electric field between the electrodes, electrons emitted from the electrodes, or heated electrons collide with molecules of the process gas to generate a plasma of the process gas. Active species such as radicals and ions in the plasma are subjected to desired microfabrication, for example etching, on the substrate surface. 2. Description of the Related Art Recently, design rules for the production of microelectronic devices and the like are becoming finer and, in particular, plasma etching is required to have higher dimensional accuracy. In such a plasma processing apparatus, components such as an edge ring, a focus ring, and a shower head influenced by plasma are built in.

In the case of the above-mentioned edge ring, as the power increases, the central part becomes the maximum on the substrate and the edge part becomes the lowest by the wavelength effect where the standing wave is formed and the skin effect where the electric field concentrates on the central part on the electrode surface. The nonuniformity is increased. If the plasma distribution is uneven on the substrate, the plasma treatment is not constant and the quality of the fine electronic device is deteriorated. Korean Patent Laid-Open No. 2009-0101129 attempts to provide uniformity of plasma distribution by placing a dielectric between the susceptor and the edge portion. However, the above-mentioned patent has a complicated structure, and it is difficult to precisely design between the dielectric and the edge portion.

Disclosure of Invention Technical Problem [8] The present invention provides a plasma part including a plate in a tungsten system having excellent corrosion resistance to plasma, ensuring uniformity of plasma distribution, improving electric conductivity and thermal conductivity, and having a simple structure, and a method for manufacturing the same. I have to.

SUMMARY OF THE INVENTION [0006] A plasma part including a tungsten-based barrier plate for solving one problem of the present invention includes a chamber forming a reaction space for plasma processing and a part located inside the chamber and in contact with the plasma, and the corrosion resistance, the critical thickness of 0.3mm and a volume resistivity of 10 ³ to 10 ^- comprises a splice junction in the trays consisting of tungsten and tungsten compounds and ⁶ Ω cm in the base material.

In the component of the present invention, the tungsten and tungsten-based compounds may be single phase or complex phase. The single phase of the tungsten-based compound may comprise a stoichiometric phase and a non-stoichiometric phase deviating from the stoichiometric composition. The single phase or complex phase may include a solid solution added with impurities in the single phase or the composite phase. The part may be any one selected from an edge ring, a focus ring, or a showerhead. The tungsten-based compound may be any one selected from tungsten carbide, tungsten boride, tungsten oxide, tungsten silicide, and tungsten phosphide.

The present invention also provides a method of manufacturing a plasma part including a tungsten-based inner plate, the method comprising the steps of: forming a chamber for forming a reaction space for plasma processing; the parts are the plasma corrosion resistance, and has a thickness of 0.3mm threshold volume resistivity of 10 ³ to 10 ^- is formed for bonding within the trays consisting of ⁶ Ω cm and of tungsten and tungsten-based compound in the base material.

In the method of the present invention, the bonding may be performed by applying heat and pressure to the retention plate and the base material to induce diffusion at the interface. The bonding may be performed by a metal bonding agent or a bonding tape. The part can be formed by wrapping the base material with the diaphragm.

According to the plasma component including the tungsten-based corrosion-resistant plate of the present invention and the method of manufacturing the same, the use of the component made of tungsten and tungsten-based compound having excellent plasma corrosion resistance and electrical conductivity gives excellent plasma corrosion resistance, The uniformity of the distribution is ensured, and the structure is simple.

1 and 2 are views schematically showing a plasma processing apparatus equipped with a plasma part according to the present invention.
3 is a cross-sectional view showing a first part applied to the plasma apparatus according to the present invention.
4 is a cross-sectional view showing a second part applied to the plasma apparatus according to the present invention.
5 is a cross-sectional view showing a third part applied to the plasma apparatus according to the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments described below can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to enable those skilled in the art to more fully understand the present invention.

Embodiments of the present invention provide a plasma component having excellent corrosion resistance against plasma, ensuring uniformity of plasma distribution, and a manufacturing method thereof by using a plate in tungsten and tungsten compounds. Such a plasma component includes components such as an edge ring, a focus ring, and a shower head that are affected by a plasma. Herein, an edge ring will be described as an example. To this end, a plasma component will be specifically described with reference to the edge ring of the present invention, and a method for manufacturing the plasma component will be described in detail.

1 and 2 are views schematically showing a plasma processing apparatus equipped with a plasma part according to an embodiment of the present invention. The present invention can be applied to a plasma processing apparatus having various structures in addition to the structure of the apparatus proposed within the scope of the present invention.

1 and 2, the treatment apparatus of the present invention comprises a chamber 10, a susceptor 20, a showerhead 30, and an edge ring 40. Here, the susceptor 20, the showerhead 30, the edge ring 40, and the like are the plasma components AP affected by the plasma. The chamber 10 defines a reaction space, and the susceptor 20 mounts the substrate 50 on its upper surface and moves up and down. In some cases, the susceptor 20 may be stationary and not move, but here, the case of vertically moving is taken as an example. The showerhead 30 is located above the susceptor 20 and injects the process gas into the substrate 50. The showerhead 30 is connected through a gas supply pipe 12 to the chamber 10 to introduce the process gas from the outside. The showerhead 30 has a buffer space 31 for uniformly diffusing the process gas introduced through the gas supply pipe 12 into the showerhead 30 before being injected into the showerhead 30 and a nozzle unit 32 composed of a number of through holes, . The edge ring 40 is mounted on the inner wall of the chamber 10 and is located above the ring support 41.

An RF power supply 16, which supplies RF power for generation of plasma, is connected to the plasma electrode or the antenna outside the chamber 10. As shown, a plasma electrode is integrally formed with the showerhead 30, and an RF power source 16 (not shown) is connected to the gas supply pipe 12 so that the RF power is applied to the center of the electrode. Can be connected. A separate RF power source is also applied to the susceptor 20 in order to control the energy of the plasma incident on the substrate 50. Although not shown, the susceptor 20 may include a heater for preheating or heating the substrate 50, a lift pin for mounting the substrate 50, and the like.

When the substrate 50 is placed on the susceptor 20, the susceptor 20 is raised to the position of the plasma treatment process. The edge ring 40 rises together while squeezing the edge of the substrate 50. Raising the susceptor 20 prevents the vent 14 from adversely affecting process uniformity. When the substrate 50 is in a process position, the process gas is injected through the showerhead 30, and RF power is applied to convert the process gas into a plasma reactive species having strong reactivity. The active paper substrate 50 may be subjected to a deposition process, an etching process, and the like, and the process gas may be discharged at a constant flow rate through the exhaust port 14 during the process. After the treatment process is performed for a predetermined period of time, the residual gas is discharged to the discharge port (14). Subsequently, the susceptor 20 is lowered and the substrate 50 is taken out from the chamber 10 to the outside.

The tungsten and tungsten-based compounds of the present invention are based on tungsten, and can be formed of tungsten (W), tungsten carbide (WC), tungsten boride (WB), tungsten oxide (WO) , Tungsten silicide (WSi), and tungsten phosphide (WP).

The tungsten (W) is a heavy and very hard transition metal, and is produced from ore such as iron mesh needles and talc. Pure tungsten is solid and ductile. The tungsten carbide comprises WC and W ₂ C. The tungsten carbide of the present invention may contain other tungsten carbide compounds within the scope of the present invention in addition to the above WC and W ₂ C. In other words, tungsten carbide refers to all compounds with tungsten and carbon as the base. The tungsten boride is also referred to as tungsten boride and includes W ₂ B,? WB,? WB,? WB, WB _2, and W ₂ B ₅ . The tungsten boride of the present invention may contain other tungsten boride compounds within the scope of the present invention in addition to the above-mentioned W ₂ B,? WB,? WB,? WB, WB ₂ and W ₂ B ₅ . That is, tungsten boride is all compounds with tungsten and boron as the base.

The tungsten oxide (WO) is WO ₃ or the like, and refers to all compounds having a base of tungsten and oxygen. The tungsten silicide (WSi) includes W ₂ Si ₃ , WSi ₂ , WSi ₃ , and the like, and refers to all compounds having tungsten and silicon as a base. The tungsten phosphide (WP) is WP, WP ₂ , W ₃ P ₅ or the like, and is a compound having tungsten and phosphorus as a base.

The tungsten and tungsten-based compounds of the present invention may be either single phase or complex phase. Here, the single phase includes both a stoichiometric phase and a non-stoichiometric phase deviating from a stoichiometric composition. The composite phase means that at least two of the tungsten and tungsten-based compounds have a predetermined ratio . In addition, the tungsten and tungsten-based compounds of the present invention include both impurities added to the single phase or the composite phase to form a solid solution or impurities which are inevitably added in the process of producing tungsten and tungsten-based compounds.

Hereinafter, the influence of plasma around the edge ring 40 among the plasma components AP will be examined. When the electric power for forming the plasma is increased, the central part of the substrate 50 becomes the maximum and the edge becomes the lowest by the wavelength effect in which the standing wave is formed in the chamber 10 and the skin effect where the electric field concentrates at the central part in the electrode surface. , The distribution of the plasma on the substrate 50 becomes uneven. If the plasma distribution on the substrate 50 is nonuniform, the plasma treatment is not constant and the quality of the fine electronic device is deteriorated. Herein, the plasma distribution refers to a state in which plasma is applied on the substrate 50 and the tungsten and carbide edge rings 40, and the distribution is distributed at each point of the substrate 50 and the tungsten and tungsten compound edge ring 40 Lt; RTI ID = 0.0 > 50 < / RTI >

The difference in volume resistivity with the edge ring 40 at the edge ED of the substrate 50 greatly affects the plasma distribution uniformity. Here, the uniformity refers to the degree of change of the plasma distribution. If the uniformity is small, the plasma distribution abruptly changes, and if the uniformity is large, the plasma distribution changes slowly. For this purpose, it is preferable that the volume resistivity of the edge ring 40 is similar to or lower than the volume resistivity of the substrate 50. In this case, since the plasma distribution extends beyond the edge of the substrate 50 and extends to the edge ring 40, the edge of the substrate 50 has a relatively high uniformity. This uniformity means that the plasma density and the straightness toward the substrate 50 are excellent. In the drawing, the state of leaving the edge of the substrate 50 is represented by the edge ED.

The volume resistivity of the tungsten and tungsten compound edge ring 40 according to the embodiment of the present invention is similar to or smaller than that of the substrate 50, which can be explained from the following viewpoints. If the volume resistivity of the edge ring 40 is similar to or less than that of the substrate 50, the plasma distribution extends beyond the edge of the substrate 50 and into the edge ring 40. The volume resistivity of the edge ring 40 of the present invention extends from the edge of the substrate to the edge ring 40 so that the plasma distribution across the substrate 50 is uniform across the edge of the substrate 50 . Such a volumic resistivity can be defined as the expansion of the edge ring 40 beyond the edge of the substrate 50.

Volume resistivity of 10 ³ to 10 of the edge ring 40 according to the present invention ^{- 6} Ω cm and is based on the technical idea for making uniform the plasma distribution in the edge of the substrate 50. Accordingly, the volume resistivity can not be obtained through simple repetitive experiments without considering the technical idea. In the foregoing, the relationship between the volume resistivity of the edge ring 40 and the substrate 50 is described by taking the edge ring as an example. However, in the case of other parts such as a shower head, the volume resistivity of the tungsten and tungsten-based compounds is the same in terms of improving the plasma corrosion resistance.

On the other hand, the plasma corrosion resistance is influenced by the density (g / cm 3) of the component. That is, the plasma corrosion resistance increases as the density of the plasma component increases. Tungsten (W) of the invention is 19.25 (g / ㎤), tungsten carbide (WC) is 15.63 (g / ㎤), tungsten boride (WB) of W ₂ B is 16.0 (g / ㎤), tungsten oxide (WO ) WO ₃ is 7.16 (g / ㎤), WSi 2 is 9.3 of tungsten silicide (WSi) (g / ㎤) and tungsten phosphide (WP) has a density of 8.5 (g / ㎤). Significantly greater than the 3.95 (g / ㎤) of 3.12 (g / ㎤) and alumina (Al ₂ O ₃₎ of a typical silicon carbide (SiC) are used. Accordingly, the tungsten and tungsten-based compounds of the present invention have greater corrosion resistance to plasma than conventional silicon carbide and alumina.

Hereinafter, a method for manufacturing a plasma part (AP) including tungsten and tungsten-based compounds will be mainly described. The plasma component AP due to the bonding can be variously modified. The plasma part produced by the joining can be regarded as a modified example in which the plasma part AP described in Figs. 1 and 2 is modified. Accordingly, the plasma parts manufactured by the joining will be referred to as first to third parts AP1, AP2, AP3. 3 is a cross-sectional view showing a first component AP1 applied to a plasma apparatus according to an embodiment of the present invention. Here, the plasma apparatus will be described with reference to FIGS. 1 and 2. FIG.

3, the first component AP1 includes a base material 60 and a tungsten and tungsten-based compound-containing plate 61 located on one side of the base material 60. As shown in FIG. The base material 60 is preferably a plasma-resistant ceramic material, but may be a metal or a combination of metal and ceramic. This is because the base material 60 is located in an environment that is not affected by the plasma. The thickness of the diaphragm 61 of the present invention is a thick film of 0.3 mm to 3 mm. The diaphragm 61 to be specified in the present invention is formed of a corrosion resistant material only in the maximum thickness range permitting etching, rather than constituting the entirety of the base material 60 by a corrosion-resistant material. This is a method for reducing the manufacturing cost of the product and facilitating the manufacturing process. As described above, the retention plate 61 having the maximum range of the allowable thickness is referred to as the reticle retention plate 61.

The retention plate 61 according to the embodiment of the present invention has a critical thickness. The reasons are as follows. First, when the edge ring 40 including the diaphragm 61 is first attached to the etching equipment, the surface of the diaphragm 61 is placed in line with the surface of the substrate 50. Substrate 50 is replaced for each subsequent etch process, but edge ring 40 remains the same. As such an etching process is repeated, a step is generated between the surface of the substrate 50 and the surface of the inner plate 61, and the step is continuously increased.

Second, the aspect ratio of the etch pattern has been increasing steadily as the device has been miniaturized. For etching corresponding to this aspect ratio, the plasma power must be increased. Plasma etching involves chemical etching by chemical reaction and physical etching by physical ion collision. However, as the plasma power increases, the intensity of the physical etching becomes relatively larger than the chemical etching, and becomes overwhelming at a predetermined power or higher. Therefore, it becomes more difficult to maintain the corrosion resistance of the plate 61.

Thirdly, when the step between the surface of the substrate 50 and the surface of the repellent plate 61 spreads beyond a predetermined thickness, the direction of the active ions pushed toward the edge of the substrate 50 is shifted from the direction perpendicular to the surface of the substrate 50 It gradually changes in an oblique direction. Etching patterns such as etching holes or trenches are also formed on the substrate 50 in the oblique direction by the etching ions in the oblique direction. Misalignment occurs in the oblique direction from the pattern of the underlying layer of the cornea, thereby reducing the yield of the device. Therefore, the minimum etch thickness limit to allow the misalignment to be tolerated and the minimum etch thickness limit to maintain the productivity of the device by etching the largest number of substrates 50 should be established.

Considering the reasons explained above, the thickness for general corrosion resistance should be 0.3mm or more. This thickness is called the critical thickness. Of course, the thickness of the plasma made of tungsten carbide bulk is typically within 3 mm, but more thickness may be applied if necessary. This is because the thickness of the plasma part AP requires a critical thickness which is the minimum thickness for corrosion resistance. The critical thickness is designed in consideration of the technical idea of the present invention, and can not be obtained by repeated experiments of the plasma part (AP).

The plate 61 in the tungsten and tungsten compounds may be formed by polishing a tungsten and tungsten-based compound bulk with a thickness of 0.3 mm to 3 mm by polishing or the like in order to bond the plate-shaped tungsten and tungsten- And processed into a plate form. By the above processing, the plate 61 in the tungsten and tungsten compound is formed. The bonding is not necessarily limited to this, but may be implemented by inducing diffusion at the interface by applying pressure between the sealing plate 61 and the base material 60 at a high temperature below the melting point.

Tungsten (W) can be formed by sintering and chemical vapor deposition, sintering is performed by forming tungsten powder at 1500 to 2500 ° C. and Ar atmosphere . The chemical vapor deposition method is produced by pyrolyzing a WF ₆ gas precursor, and the substrate temperature is preferably 200 to 500 ° C. Tungsten carbide (WC) can also be produced by sintering and chemical vapor deposition. Sintering is performed in an atmosphere having a partial pressure of oxygen lower than atmospheric pressure or a reducing gas atmosphere, such as a vacuum or an inert gas atmosphere, in a tungsten carbide powder. Chemical vapor deposition may be carried out a WF ₆ precursor gas and CH ₄ eseo 500 ~ 1500 ℃.

Tungsten boride (WB) is produced by sintering and chemical vapor deposition. Sintering is performed by sintering W ₂ B, WB, WB ₂ and W ₂ B ₅ powders or by mixing tungsten (W) powder and boron (B) powder in a molar ratio. At this time, the sintering temperature is preferably 1500 to 2500 ° C and an Ar atmosphere. For chemical vapor deposition, WF ₆ gas precursor and B ₂ H ₆ (diborane) gas are deposited at 200 to 600 ° C. Tungsten silicide (Si) is sintered in W ₂ Si ₃ , WSi ₂ , and WSi ₃ powders or in a molten ratio of tungsten (W) powder and silicon (Si) powder. Chemical vapor deposition deposits WF ₆ gas precursor and silane gas at 200 ~ 600 ℃. WO ₃ can be produced by sintering WO ₃ powder at 1500 to 2500 ° C. in an Ar atmosphere or depositing a WF ₆ gas precursor and silane gas at 200 to 600 ° C. Tungsten phosphide (WP) sinter WP, WP ₂ , and W ₃ P ₅ powders or deposit WF ₆ gas precursor and phosphine (PH ₃ ) gas.

In the previous example, tungsten and tungsten-based compounds can be prepared by physical vapor deposition, mainly for sintering and chemical vapor deposition. For example, in the case of tungsten carbide (WC), a tungsten target is sputtered with an inert gas such as Ar and a gas such as CH ₄ containing carbon is injected to synthesize and grow tungsten carbide , And the target itself can be sputtered using tungsten carbide.

4 is a cross-sectional view showing a second component AP2 applied to a plasma apparatus according to an embodiment of the present invention. At this time, the second component AP2 is the same as the first component AP1 except that the plate 62 in the tungsten and tungsten compound covers the base material 60 in a different manner. Here, the plasma apparatus will be described with reference to FIGS. 1 and 2, and the second component AP2 is one of the components affected by the plasma described above, such as an edge ring.

According to Fig. 4, the tungsten and tungsten compound compound plates 62 of the second component AP2 seal the base material 60. Fig. The sealing refers to plasma sealing in which the base material 60 covers the base material 60 to such an extent that the base material 60 can not be damaged by the plasma. For example, in the case where the base material 60 has a rectangular shape with an upper surface, a lower surface and a side surface, the upper surface is a plasma exposed surface that is directly exposed to plasma, the lower surface is a surface facing the upper surface, It can be regarded as a surface connecting the upper surface and the lower surface. The stopper plate 62 of the second component 4b covers the plasma exposed surface, the side surface, and the bottom surface. In this way, in the base material 60, a portion which can be damaged by the plasma is sealed. The base material 60 may be made of any one selected from metals, ceramics, and composites thereof.

On the other hand, if the mother material 60 is sealed by the diaphragm 62, the mother material 60 may not have plasma corrosion resistance. The base material 60 can be freely applied to a material having good electrical conductivity and thermal conductivity, for example, a metal material, irrespective of plasma corrosion resistance. Further, the base material 60 can be made of a material having a good shock absorbing property. For example, yttria that reacts with plasma to form solid state debris may be applied, and materials having good electrical conductivity and thermal conductivity such as aluminum or copper may be applied. Accordingly, in the case of a metal which is likely to be corroded by plasma, it can be employed as the base material 60 of the second component AP2 without being limited thereto. As described above, when the base material 60 is sealed with the sealing plate 62, the degree of freedom of selection of the base material 60 can be greatly increased as compared with the unsealed first part AP1.

5 is a cross-sectional view showing a third component AP3 applied to a plasma apparatus according to an embodiment of the present invention. At this time, the third part AP3 includes the first part AP1 and the second part AP2, except that the adhesive layer 63 is provided between the plate 61 and the base material 60 in the tungsten and tungsten compounds. same. Here, the plasma apparatus will be described with reference to FIGS. 1 and 2, and the third component AP3 is one of components affected by the plasma described above, such as an edge ring.

5, the adhesive layer 63 of the third component AP3 bonds the tungsten and tungsten compound compound plate 61 and the base material 60 together. The adhesive layer 63 is not necessarily limited to this, but a metal such as indium may be bonded with a bonding agent, or other bonding tape may be used. In the case of the second component AP2, an adhesive layer 63 is present between the base material 60 and the inner plate 61. Thus, when the adhesive layer 63 is present, the coupling force between the diaphragm plates 61 and 62 and the base material 60 is increased, so that the plates 61 and 62 in the tungsten carbide are not damaged by the impact caused by the plasma.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but many variations and modifications may be made without departing from the spirit and scope of the invention. It is possible.

10; Chamber 12; Gas supply pipe
20; A susceptor 30; Shower head
40; Edge ring 41; Ring support
50; A substrate 60; Base material
61, 62; Inner plate
63; Adhesive layer AP; Plasma parts
AP1, AP2, AP3; The first to third plasma parts

Claims (10)

A chamber forming a reaction space for plasma processing; And
An edge ring positioned within the chamber and contacting the plasma and squeezing the edge of the substrate,
Wherein the edge ring includes a joint for joining an end plate made of a tungsten and tungsten-based compound having a plasma corrosion resistance, a critical thickness of 0.3 mm and a volume specific resistance of 10 ³ to 10 ^-6 Ω · cm to a base material,
Wherein the volume resistivity is similar to or lower than the volume resistivity of the substrate, the surface of the substrate is collinear with the surface of the retort,
Wherein the distribution of the plasma toward the substrate extends beyond the edge of the substrate and into the edge ring. The component for a plasma device according to claim 1, wherein the tungsten and tungsten-based compound is a single phase or a composite phase. 3. The component of claim 2, wherein the single phase of the tungsten-based compound comprises a stoichiometric composition and a non-stoichiometric phase deviating from the stoichiometric composition. The component for a plasma device according to claim 2, wherein the single phase or the composite phase comprises a solid solution added with an impurity in the single phase or the composite phase. delete The component for a plasma apparatus according to claim 1, wherein the tungsten-based compound is any one selected from the group consisting of tungsten carbide, tungsten boride, tungsten oxide, tungsten silicide, and tungsten phosphide. A chamber forming a reaction space for plasma processing; And
The edge ring being located inside the chamber and contacting the edge of the substrate in contact with the plasma,
Wherein the edge ring is formed by bonding a reticulated plate made of a tungsten and tungsten-based compound having a plasma resistivity, a critical thickness of 0.3 mm and a volume specific resistance of 10 ³ to 10 ^-6 Ω · cm to the base material,
Wherein the volume resistivity is similar to or lower than the volume resistivity of the substrate, the surface of the substrate is collinear with the surface of the retort,
Wherein the distribution of the plasma toward the substrate extends beyond the edge of the substrate and into the edge ring. ≪ RTI ID = 0.0 > 11. < / RTI > 8. The method according to claim 7, wherein the bonding is performed by applying heat and pressure to the backing plate and the base material to induce diffusion at the interface. The method of manufacturing a component for a plasma device according to claim 7, wherein the bonding is performed by bonding with a metal bonding agent or bonding with a bonding tape. 8. The method according to claim 7, wherein the part is formed by wrapping the base material with the baffle plate.

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