WO2019155699A1 - Dispositif d'imagerie, et procédé d'imagerie - Google Patents

Dispositif d'imagerie, et procédé d'imagerie Download PDF

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Publication number
WO2019155699A1
WO2019155699A1 PCT/JP2018/040935 JP2018040935W WO2019155699A1 WO 2019155699 A1 WO2019155699 A1 WO 2019155699A1 JP 2018040935 W JP2018040935 W JP 2018040935W WO 2019155699 A1 WO2019155699 A1 WO 2019155699A1
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Prior art keywords
pixel
signal
charge
subframe
moving object
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PCT/JP2018/040935
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English (en)
Japanese (ja)
Inventor
井本　努
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ソニーセミコンダクタソリューションズ株式会社
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Publication of WO2019155699A1 publication Critical patent/WO2019155699A1/fr

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/42—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Definitions

  • the present technology relates to an imaging apparatus and an imaging method. More specifically, the present technology performs an imaging apparatus that can switch an imaging mode between an imaging mode that captures images at a low resolution and an imaging mode that captures images at a high resolution, and switches between such imaging modes.
  • the present invention relates to an imaging method including the above.
  • the imaging device is used as a surveillance camera, for example.
  • each pixel included in the solid-state imaging device described in Patent Document 1 below includes first and second charge transfer paths from the photoelectric conversion element to the floating semiconductor region, and the first charge transfer path is the second charge transfer path. Different from the charge transfer path.
  • the first and second charge transfer paths include first and second shutter switches, respectively. In one transfer path, the charge from the photoelectric conversion element can be temporarily stored in the first storage diode. Therefore, the shutter switches on the individual transfer paths allow operation of global shutters multiplexed in the pixel array without interfering with each other with respect to charge transfer.
  • High-resolution imaging consumes more power than low-resolution imaging.
  • a certain area is imaged at a low resolution until the imaging target is detected, and when the imaging target is detected in the area, the imaging target is captured at a high resolution. It is desirable to image.
  • This technology aims to provide a technique for imaging a moving object immediately upon detecting the moving object. More specifically, it is an object of the present technology to provide a technique for detecting a moving object at a low resolution and immediately imaging the moving object at a high resolution when the moving object is detected.
  • the present inventor has found that the moving object can be imaged by one frame time after the moving object is detected by the imaging technique having a specific configuration.
  • the present inventors have also found that the moving object can be imaged within a frame in which the moving object is detected by an imaging technique having a specific configuration.
  • the present technology holds one subframe signal charge among the plurality of subframe signal charges obtained by performing the exposure a plurality of times within one frame time in the first charge holding unit, and the other one.
  • a charge transfer control unit that controls transfer of signal charges so as to hold two subframe signal charges in the second charge holding unit, and a pixel signal based on the subframe signal charges held in the first charge holding unit Is added to each pixel block composed of a plurality of pixels, and the first voltage signal is acquired for each pixel block, and the subframe signal charges held in the second charge holding unit are
  • a pixel addition processing unit that performs pixel addition for each pixel block and obtains a second voltage signal for each pixel block; and the first voltage signal in each pixel block;
  • a moving object detection unit that detects a moving object based on a comparison with the second voltage signal; and a charge processing unit that processes a signal charge for each pixel in response to detection of the moving object by the moving object detection unit.
  • the number of exposures within one frame time may be two
  • the first charge holding unit may be a floating diffusion
  • the second charge holding unit may be a photoelectric conversion element.
  • the charge transfer control unit holds the previous subframe signal charge in the floating diffusion among the two subframe signal charges obtained by the two exposures, and transfers the subsequent subframe signal charge to the photoelectric conversion element.
  • the transfer of signal charges can be controlled so as to be held at
  • in each of the pixel blocks the floating diffusion of each pixel is connected in a vertical direction by a floating wiring, and the floating wiring is connected to a state in which the floating diffusion is connected.
  • the addition of pixel signals based on subframe signal charges held in the floating diffusion is performed by setting the floating wirings in the connected state. It can be broken.
  • vertical signal lines that transfer signal charges held in each pixel in units of columns are connected in a horizontal direction by a horizontal wiring
  • the horizontal wiring may be configured to be able to switch between a state in which the vertical signal lines are connected and a state in which the vertical signal lines are not connected, and the addition of the pixel signal based on the signal charge held in each pixel Can be performed by bringing the horizontal wiring into the connected state.
  • the frame time of the previous subframe may be equal to the frame time of the subsequent subframe, or the frame time of the previous subframe is longer than the frame time of the subsequent subframe. May be.
  • the pixel blocks are divided into two groups, a first group and a second group, the first group frame time and the second group frame time. It may be off.
  • each pixel may be provided with an overflow gate capable of resetting the subframe signal charge held in the photoelectric conversion element.
  • each pixel block is divided into two groups, a first pixel group and a second pixel group, the exposure time of the first pixel group and the second pixel group.
  • the exposure time may be different.
  • the comparison may include a difference between the first voltage signal and the second voltage signal, a value obtained by dividing the difference by the first voltage signal, or the first voltage signal. This may be done using the value divided by the second voltage signal.
  • one subframe signal charge among the plurality of subframe signal charges obtained by performing the exposure a plurality of times within one frame time is held in the first charge holding unit, and the other one is stored.
  • a charge transfer control unit that controls transfer of signal charges so as to hold two subframe signal charges in the second charge holding unit, and a pixel signal based on the subframe signal charges held in the first charge holding unit Is added to each pixel block composed of a plurality of pixels, and the first voltage signal is acquired for each pixel block, and the subframe signal charges held in the second charge holding unit are
  • a pixel addition processing unit that performs pixel addition for each pixel block and obtains a second voltage signal for each pixel block, and the first voltage signal in each pixel block
  • a moving object detection unit that detects a moving object based on a comparison with the second voltage signal, and another subframe signal in the frame in which the moving object is detected in response to the detection of the moving object by the moving object detection unit
  • an imaging device including a charge processing unit that processes
  • the number of exposures within one frame time is 3 or more, and the charge transfer control unit holds the further one subframe signal charge in a third charge holding unit.
  • the first charge holding unit may be a floating diffusion
  • the second charge holding unit may be a photoelectric conversion element or a memory
  • the charge transfer control unit may Of the three or more sub-frame signal charges obtained by exposure more than once, one sub-frame signal charge is held in the first charge holding section and any sub-frame after the sub-frame signal charge The transfer of the signal charge can be controlled so as to hold the signal charge in the second charge holding unit.
  • the floating diffusion of each pixel is connected in a vertical direction by a floating wiring, and the floating wiring is connected to a state in which the floating diffusion is connected.
  • the addition of pixel signals based on subframe signal charges held in the floating diffusion is performed by setting the floating wirings in the connected state. It can be broken.
  • each of the pixel blocks vertical signal lines that transfer signal charges held in each pixel in units of columns are connected in a horizontal direction by a horizontal wiring
  • the horizontal wiring may be configured to be able to switch between a state in which the vertical signal lines are connected and a state in which the vertical signal lines are not connected, and the addition of the pixel signal based on the signal charge held in each pixel Can be performed by bringing the horizontal wiring into the connected state.
  • the second charge holding unit may be a photoelectric conversion element
  • the third charge holding unit may be a memory.
  • the pixels in each pixel block are divided into two groups, a first pixel group and a second pixel group, the exposure time of the first pixel group and the second pixel group.
  • the exposure time of the pixel group may be different.
  • the frame time of the subframe used to generate the first voltage signal is equal to the frame time of the subframe used to generate the second voltage signal.
  • the former frame time may be longer than the latter frame time.
  • the pixels in each pixel block are divided into two groups, a first pixel group and a second pixel group, which are used to generate the first voltage signal.
  • the frame time of the subframe used may be different from the frame time of the subframe used to generate the second voltage signal.
  • one subframe signal charge among the plurality of subframe signal charges obtained by performing the exposure a plurality of times within one frame time is held in the first charge holding unit, and the other one is stored.
  • a charge transfer control unit that controls transfer of signal charges so as to hold two subframe signal charges in the second charge holding unit, and a pixel signal based on the subframe signal charges held in the first charge holding unit Is added to each pixel block composed of a plurality of pixels, and the first voltage signal is acquired for each pixel block, and the subframe signal charges held in the second charge holding unit are
  • a pixel addition processing unit that performs pixel addition for each pixel block and obtains a second voltage signal for each pixel block, and the first voltage signal in each pixel block and the previous
  • a motion detection unit for detecting a moving object based on the comparison of the second voltage signal, providing it has an imaging device comprising a.
  • the present technology provides a signal charge acquisition step of performing a plurality of exposures within one frame time to acquire a plurality of subframe signal charges, and one subframe signal charge among the plurality of subframe signal charges.
  • the pixel signal based on the subframe signal charge held in the first charge holding unit is added to each pixel block composed of a plurality of pixels, and a first voltage signal is obtained for each pixel block.
  • An imaging method is also provided.
  • This technology allows the moving object to be imaged within one frame time after the moving object is detected.
  • played by this technique is not necessarily limited to the effect described here, and may be the any effect described in this specification.
  • First embodiment (imaging device) (1) Description of the first embodiment (2) First example of the first embodiment (imaging device) (3) Second example of the first embodiment (an imaging device that captures an image within one frame time after motion detection) (3-1) Configuration Example of Imaging Device (3-2) Configuration Example of Imaging Device Included in Imaging Device (3-3) Operation Example of Imaging Device (3-4) Other Imaging Device Included in Imaging Device (3-5) Example of how to connect pixels in a pixel block (4) Third example of the first embodiment (an imaging device that captures an image within a moving object detection frame) (4-1) Configuration Example of Imaging Device (4-2) Configuration Example of Imaging Device Included in Imaging Device (4-3) Example of Operation of Imaging Device (4-4) Other Imaging Device Included in Imaging Device (4-5) Other Configuration Examples of Image Sensors Included in Imaging Device
  • An imaging apparatus holds one subframe signal charge in a first charge holding unit among a plurality of subframe signal charges obtained by performing exposure a plurality of times within one frame time, and A charge transfer control unit that controls transfer of signal charges so that one subframe signal charge is held in the second charge holding unit, and a pixel based on the subframe signal charges held in the first charge holding unit
  • a signal is added to each pixel block composed of a plurality of pixels to obtain a first voltage signal for each pixel block, and a subframe signal charge held in the second charge holding unit
  • a pixel addition processing unit that performs pixel addition for each pixel block and obtains a second voltage signal for each pixel block, and the first voltage in each pixel block No. a and a
  • a moving object detection unit which detects a moving object based on the comparison of the second voltage signal.
  • the subframe signal charge is processed for each pixel block including a plurality of pixels, not for each pixel, during moving object detection. Therefore, during the moving object detection, the power consumption is reduced as compared with the case where the subframe signal charge is processed for each pixel. Furthermore, the moving object detection by the imaging apparatus according to the present technology is performed by using a pixel signal based on one subframe signal charge among a plurality of subframe signal charges obtained by performing multiple exposures within one frame time for each pixel block. Based on a comparison between the first voltage signal obtained by the addition process and a pixel signal based on another one subframe signal charge and the second voltage signal obtained by the pixel addition process for each pixel block. Done.
  • the moving object detection is performed by comparing two voltage signals obtained in one frame. Therefore, by processing the signal charge for each pixel in the frame immediately after that frame, the imaging mode can be switched from the low-resolution imaging mode with low power consumption to the high-resolution imaging mode with high power consumption. Can be done immediately. For example, high-resolution imaging can be performed within one frame time after moving object detection. As a result, for example, even when the moving object is moving at high speed, the imaging device according to the present technology can capture the moving object.
  • the moving object detection by the imaging device according to the present technology is a pixel signal based on one subframe signal charge among a plurality of subframe signal charges obtained by performing multiple exposures within one frame time.
  • AD conversion of one pixel signal is performed by performing AD conversion (down count) of the P phase signal and AD conversion (up count) of the D phase signal in order to perform CDS.
  • a digital signal value of one pixel signal voltage is obtained.
  • AD conversion steps corresponding to two times of performing CDS in a normal imaging device when performing processing in a normal imaging device for two subframe signals, the number of AD conversion steps corresponding to two times of performing CDS in a normal imaging device is performed.
  • AD conversion (down count) of one subframe signal (D-phase signal) and AD conversion of another subframe signal (D-phase signal) are performed. (Up count) is performed. That is, in the present technology, the processing of the two subframe signals is performed by the number of AD conversion steps corresponding to one time when CDS is performed in a normal image sensor. As a result, power consumption for moving object detection can be reduced.
  • the image pickup apparatus may include an image pickup element that enables the moving object detection as described above, particularly a solid-state image pickup element.
  • the image sensor can include a pixel array unit.
  • an imaging apparatus suitable for enabling the moving object detection as described above for example, an imaging apparatus including a CMOS image sensor, preferably an imaging apparatus including a 4-transistor (4Tr) type CMOS image sensor is exemplified. Can do. That is, the imaging device of the present technology may include, for example, a CMOS image sensor, preferably a 4Tr type CMOS image sensor, as the imaging element.
  • An imaging device provided in an imaging device may have a pixel region in which a plurality of pixels are arranged in an array.
  • the pixel area is, for example, a rectangular pixel area, and one side of the rectangular pixel area may be composed of 100 to 5000, preferably 200 to 3000, more preferably 500 to 2000 pixels.
  • Each of the plurality of pixels preferably has a plurality of charge holding units that can be exposed a plurality of times within one frame time and can separately hold a plurality of subframe signal charges obtained by the plurality of times of exposure. .
  • the frame may mean a unit period in which a series of processes for performing the moving object detection is performed by the imaging device while the moving object detection is performed by the imaging device of the present technology.
  • a frame means that (a) exposure for obtaining one subframe signal charge acquired for the moving object detection is performed while moving object detection is performed by the imaging apparatus of the present technology. And (b) a time during which exposure is performed to obtain another subframe signal charge acquired for the moving object detection, and (c) a pixel signal based on the one subframe signal charge.
  • the frame may include a so-called blanking period during which no exposure is performed after signal voltage comparison. During the blanking period, power consumption can be suppressed by turning off the power of functional blocks that are not used. Therefore, in the present technology, the frame is preferably the time (a), the time (b), and the time (c) while the moving object is detected by the imaging device of the present technology. And a blanking period after the time of (c).
  • a frame may mean a unit period in which a series of processes for obtaining one image is performed.
  • the unit period may include, for example, a time for performing exposure and a time for reading out signal charges obtained by the exposure.
  • the unit period may include a blanking period after the reading time.
  • the frame time means a time length of one frame or a time length of one subframe.
  • FIG. 1 is a block diagram of an example of an imaging apparatus according to the present technology.
  • the imaging device 100 includes an optical system 101, a shutter device 102, a pixel array unit 103, a control unit 104, a monitor 105, and a memory 106.
  • the control unit 104 includes a charge transfer control unit 107, a pixel addition processing unit 108, a moving object detection unit 109, a charge processing unit 110, and a signal processing unit 111.
  • the pixel array unit 103 and the control unit 104 can be integrated on one semiconductor chip (imaging device 112) as indicated by a dotted line in FIG.
  • a part of the moving object detection unit 109 and / or a part of the signal processing unit 111 may be divided into different semiconductor chips.
  • the optical system 101 and / or the shutter device 102 can be integrally formed with the image sensor 112 by using wafer level package technology.
  • the number of pixels in the pixel region included in the pixel array unit 103 may be appropriately selected by those skilled in the art.
  • the pixel area can be rectangular, for example.
  • One side of the rectangular pixel region can be composed of, for example, 100 to 5000 pixels, preferably 300 to 4000, more preferably 500 to 3000 pixels.
  • the pixel region may be divided for each pixel block including a plurality of pixels.
  • One pixel block may be composed of, for example, 2 pixels to 20000 pixels, preferably 4 pixels to 10000 pixels, more preferably 100 pixels to 8000 pixels, and even more preferably 1000 to 5000 pixels.
  • the pixel block may be rectangular.
  • One pixel block has 64 ⁇ 64 pixels (horizontal side ⁇ vertical side), 64 ⁇ 32 pixels, 32 ⁇ 64 pixels, 32 ⁇ 32 pixels, 32 ⁇ 16 pixels, 16 ⁇ 32 pixels, and 16 ⁇ 16. It may be divided into rectangular pixel blocks composed of pixels, 8 ⁇ 16 pixels, 16 ⁇ 8 pixels, 8 ⁇ 8 pixels, 4 ⁇ 8 pixels, 8 ⁇ 4 pixels, or 4 ⁇ 4 pixels. The fact that the pixel is divided into pixel blocks may be visually recognized by the circuit structure, or may be electrically divided although not visually recognized depending on the circuit structure.
  • the electrical division can be realized by electrically connecting a plurality of pixels to be included in the pixel block, for example, by turning on or off predetermined transistors and / or switches by a control unit in the present technology.
  • the pixel region used in the present technology is a rectangular pixel region composed of, for example, 1280 ⁇ 768 pixels, and the pixel region is composed of 64 ⁇ 64 pixels (4096 pixels). May be divided into pixel blocks (that is, 20 ⁇ 12 pixel blocks).
  • the pixels included in the pixel array unit 103 may be arranged in an array. Each of the pixels included in the pixel array unit 103 can be configured to be able to perform moving object detection as described in “(1) Description of the first embodiment” above.
  • Each pixel includes a first charge holding unit that holds one subframe signal charge among a plurality of subframe signal charges obtained by performing exposure a plurality of times within one frame time, and another subframe signal. It has an electric charge at least with the 2nd electric charge holding part.
  • These charge holding units may be capacitors used in an image sensor (for example, a CMOS image sensor), for example.
  • examples of these charge holding portions include a floating diffusion (also referred to as FD in this specification) and a memory (also referred to as memory in this specification).
  • Each pixel included in the pixel array unit 103 includes a photoelectric conversion element.
  • the photoelectric conversion element may be a known element used in an imaging element (for example, a CMOS image sensor).
  • Each pixel may include one photoelectric conversion element, or may include two or more (for example, two, three, or four) photoelectric conversion elements.
  • Each pixel included in the pixel array unit 103 can include a component that enables the charge transfer control unit 107 to control the transfer of signal charges.
  • the component may be, for example, a known transistor and / or switch used in an image sensor (for example, a CMOS image sensor).
  • the charge transfer control according to the present technology can be performed by controlling the on / off of the transistor and / or the switch by the charge transfer control unit 107.
  • the constituent element include a transfer transistor, an amplification transistor, a selection transistor, and a reset transistor.
  • the pixel array unit 300 shown in FIG. 3 has a configuration in which a predetermined number of pixel units are arranged in an array.
  • the pixel array unit shown in FIG. 3 is an example of a pixel array unit that does not share pixels.
  • the pixel unit may be a single pixel or may have a structure in which a plurality of pixels share a transistor group.
  • One FD may be shared by 2 ⁇ 2 pixels or 2 ⁇ 4 pixels.
  • FIG. 3 detailed circuit components such as transistors are omitted.
  • the pixel array unit 300 in FIG. 3 has a structure in which an upper chip 301 and a lower chip 311 are stacked.
  • the upper chip 301 is provided with a pixel array 302, and the lower chip 311 is provided with a DAC (Digital Analog Converter) 312, comparators 313-1, 313-2,.
  • a drive unit 314 is provided.
  • the pixel array 302 is provided with pixels 303 arranged in N rows in the vertical direction and M columns in the horizontal direction.
  • the pixels 303-1-1 to 303-1-N are arranged in the first column.
  • Pixels 303-M-1 to 303-MN are arranged in the Mth column.
  • a plurality of pixels arranged in one vertical column are connected to one vertical signal line.
  • the pixels 303-1-1 to 303-1-N are connected to the vertical signal line 304-1.
  • the DAC 312 and the comparators 313-1 to 313-M can constitute a column AD circuit (also referred to as a column processing unit).
  • each of the comparators 313-1 to 313-M compares the signal charge supplied via each of the vertical signal lines 304-1 to 304-M with the reference signal supplied from the DAC 312 and compares the comparison result. Can be output.
  • the comparators 313-1 to 313-M may be provided with a counter (not shown) that counts a count value in synchronization with a clock that changes the output voltage of the reference signal. The counter can output a count value as a digital signal according to the comparison result.
  • a pixel signal corresponding to the signal charge is read out from the pixel or pixel block on the pixel array 302 through the vertical signal lines 304-1 to 304-M in accordance with a control signal supplied in units of rows from the vertical driving unit 314. Then, the pixel signal that is an analog voltage signal is converted into digital data in units of rows by the column AD circuit.
  • AD conversion can be performed M ⁇ N times in order to read the pixel signal on the entire imaging surface.
  • the control unit 104 can control the optical system 101, the shutter device 102, and the pixel array unit 103. Further, the control unit 104 can cause the monitor 105 to display an image obtained according to the present technology, or store the image data obtained according to the present technology in the memory 106. Further, the control unit 104 can acquire the image data stored in the memory 106 and display it on the monitor 105.
  • the charge transfer control unit 107 controls signal charge transfer according to the present technology.
  • the charge transfer control unit 107 can control the transfer of signal charges accumulated in the photoelectric conversion elements of each pixel included in the pixel array unit 103.
  • the signal charge transfer control can be performed, for example, by turning on or off a plurality of transistors and / or switches included in each pixel.
  • a predetermined subframe signal charge is held in a predetermined charge holding unit.
  • the pixel addition processing unit 108 adds the pixel signals corresponding to the subframe signal charges for each pixel block according to the present technology. For example, the pixel addition processing unit 108 adds the pixel signals based on the subframe signal charges held in the first charge holding units in the plurality of pixels constituting one pixel block so as to add the pixels. To control. Pixel addition may be performed, for example, by collecting signal charges of a plurality of pixels in one FD. Specifically, these FDs effectively function as one capacitor by the wiring connecting the plurality of FDs. By transferring the signal charges of a plurality of pixels to this capacitor, the signal charges can be added.
  • these signal charges can be collected in one FD by transferring the signal charges held in a plurality of PDs to one FD.
  • Such pixel addition performed on signal charges is also referred to as FD addition.
  • the FD addition for example, the subframe signal charges held in each first charge holding unit or each second charge holding unit in a plurality of pixels constituting one pixel block are transferred to the FD of each pixel.
  • the FDs of these pixels can be connected by wiring that can be selectively turned on or off. Pixel addition may be performed, for example, by adding signal voltages.
  • the signal voltage is added by simultaneously opening the selection transistors of a plurality of pixels connected to one vertical signal line and adding the signal voltages of the plurality of pixels and / or in the horizontal direction. This may be performed by adding signal voltages of a plurality of connected vertical signal lines.
  • Such pixel addition performed on the signal voltage is also referred to as SF (source follower) addition.
  • the SF addition is performed by turning on a predetermined switch on the wiring connecting the vertical signal lines to be pixel-added out of the switch group provided on the wiring connecting the vertical signal lines in the horizontal direction. It can be broken.
  • the pixel addition may be FD addition or SF addition, or may be a combination of FD addition and SF addition.
  • the pixel addition processing unit 108 can perform pixel addition by switching on or off a predetermined transistor group and / or switch group.
  • Pixel addition is a wiring and a transistor group for collectively reading out signal charges or signal voltages held in each first charge holding unit or each second charge holding unit in a plurality of pixels constituting one pixel block And / or by providing a group of switches.
  • the moving object detection unit 109 detects a moving object by comparing the first voltage signal generated by the pixel addition processing unit 108 with the second voltage signal.
  • the comparison can be performed based on a digital signal obtained by converting a voltage signal obtained by pixel addition, for example.
  • the conversion may be performed using means known to those skilled in the art, for example, an analog-digital converter (also referred to as an AD converter).
  • the processing by the AD converter may be, for example, single slope AD conversion, ⁇ - ⁇ AD conversion, successive approximation AD conversion, and preferably single slope AD conversion.
  • Motion detection can be performed based on the digital signal obtained as a result of the conversion.
  • a digital value of the difference between the first voltage signal and the second voltage signal is generated using the single slope ADC and the moving object is detected based on the digital value is as follows. That is, (1) AD conversion is performed on the first voltage signal, and the counter is counted down from the initial value 0. (2) Next, AD conversion is performed on the second voltage signal using the count value of (1) as an initial value, and the counter is up-counted. (3) As a result of the up-counting in (2) above, the value held by the counter (counter value) becomes the digital value of the difference between the first voltage signal and the second voltage signal. (4) When the counter value exceeds a predetermined threshold, it can be determined that a moving object has been detected.
  • the count value of (1) is stored in the data storage unit (603 in FIG. 6), and the ratio of the digital values of (1) and (3) is obtained by a digital circuit or software. It may be determined that a moving object has been detected when the ratio exceeds a predetermined threshold.
  • a specific process for generating a digital value of the difference between the first voltage signal and the second voltage signal using ⁇ - ⁇ ADC and detecting a moving object based on the digital value is as follows, for example. That is, (1) the first voltage signal is sampled and held in the first capacitor of the ⁇ - ⁇ ADC circuit. (2) The first voltage signal is sampled and held in the second capacitor of the ⁇ - ⁇ ADC circuit.
  • the difference between the voltages held in the first and second capacitors is converted into a digital value by the ⁇ - ⁇ ADC circuit.
  • a specific process in the case where the ratio between the first voltage signal and the second voltage signal is obtained using an analog divider and the moving object is detected based on the ratio is as follows. (1) The first voltage signal is sampled and held in the first capacitor of the column processing unit (602 in FIG. 6). (2) The second voltage signal is sampled and held in the second capacitor of the column processing unit (602 in FIG. 6).
  • a voltage signal sampled and held in the first and second capacitors is applied to an analog divider to generate a voltage having a ratio between the two.
  • the specific voltage is converted into a digital value by a known technique such as SS-ADC or ⁇ - ⁇ ADC.
  • SS-ADC SS-ADC
  • ⁇ - ⁇ ADC ⁇ - ⁇ ADC
  • the comparison is as described above, the difference between the first voltage signal and the second voltage signal, the value obtained by dividing the difference between the first voltage signal and the second voltage signal by the first voltage signal, Alternatively, it can be performed using a value obtained by dividing the first voltage signal by the second voltage signal.
  • the calculation for obtaining these values can be performed by using, for example, an analog circuit (divider), a logic circuit, or arbitrary software. These voltage signals can be stored in, for example, an analog memory (S / H circuit) or a logic memory (register) after AD conversion.
  • the moving object detection unit 109 compares one or more of these values (particularly digital values) with a predetermined threshold, and determines that there is a moving object in the imaging region if the value is equal to or greater than the threshold. If it is less than the threshold value, it may be determined that there is no moving object in the imaging region.
  • the threshold value may be changed using a voltage signal obtained in a past subframe.
  • the threshold value may be set based on a voltage signal obtained based on subframe signal charges in the past 1 to 10 frames (particularly 3 to 7 frames). Further, a moving object may be detected by high-order image processing using a comparison result between the first voltage signal and the second voltage signal in a plurality of pixel blocks.
  • the charge processing unit 110 performs signal charge processing for each pixel. For example, in response to detection of a moving object by the moving object detection unit 109, the control unit 104 stops the pixel addition processing by the pixel addition processing unit 108. The pixel addition process is stopped when, for example, a plurality of pixels in the pixel block are not electrically connected by turning off a transistor group and / or a switch group provided on a wiring for pixel addition. Can be done.
  • the signal charge processing for each pixel by the charge processing unit 110 may be general signal charge processing for obtaining an image (for example, a still image or a moving image). A high resolution image is obtained by processing the signal charge for each pixel by the charge processing unit 110.
  • the signal charge processing by the charge processing unit 110 may be performed on the signal charge obtained by exposure in the frame immediately after the frame in which the moving object is detected by the moving object detection unit 109. Thereby, it is possible to capture an image in a frame immediately after the moving object is detected. For example, after a moving object is detected, the moving object is imaged before one frame time during the moving object detection mode elapses or before half time of one frame time during the moving object detection mode elapses. be able to.
  • the signal charge processing by the charge processing unit 110 may be performed on the signal charge obtained by exposure within the frame in which the moving object is detected by the moving object detection unit 109. Thereby, the moving body can be imaged within the frame in which the moving body is detected.
  • the signal processing unit 111 displays an image on the monitor 105 based on the signal voltage of each pixel block obtained as a result of processing by the pixel addition processing unit 108 or based on the signal voltage of each pixel obtained as a result of processing by the charge processing unit 110. Can be displayed. Alternatively, the signal processing unit 111 performs image data based on the signal voltage of each pixel block obtained as a result of processing by the pixel addition processing unit 108 or based on the signal voltage of each pixel obtained as a result of processing by the charge processing unit 110. Can be stored in the memory 106.
  • the optical system 101 can have one or a plurality of lenses.
  • the optical system 101 guides light (incident light) from the subject to the pixel array unit 103 and forms an image on the light receiving surface of the pixel array unit 103.
  • the optical system 101 may be appropriately selected by those skilled in the art depending on the type of the imaging device 100, for example.
  • the shutter device 102 can be disposed between the optical system 101 and the pixel array unit 103.
  • the shutter device 102 is controlled by the control unit 104 to control the exposure period of the pixel array unit 103.
  • an exposure period during which the moving object is detected by the moving object detection unit 109 may be different from an exposure period in imaging after the moving object is detected.
  • the exposure periods in a plurality of exposures within one frame while the moving object detection by the moving object detection unit 109 is performed may be different from each other.
  • the control unit 104 can control the shutter device 102 so that exposure is performed for a desired time.
  • the monitor 105 can display an image under the control of the control unit 104.
  • the memory 106 can store image data obtained under the control of the control unit 104.
  • the imaging device 100, the charge transfer control unit 107, the pixel addition processing unit 108, and the charge processing unit 109 illustrated in FIG. 1 are configured to be included in the control unit 104.
  • the imaging device according to the present technology is not limited to the configuration.
  • the image sensor in the imaging device may include a charge transfer control unit, a pixel addition processing unit, and a charge processing unit.
  • a charge transfer control unit, a pixel addition processing unit, and a charge processing unit may be provided on the lower chip of the imaging device, and a pixel array unit may be provided on the upper chip of the imaging chip.
  • FIG. 1 is a block diagram of an example of the imaging apparatus, and each component included in the imaging apparatus 100 is as described in “(2) First example (imaging apparatus) of the first embodiment”. It is.
  • the imaging element 112 in particular, the pixel array unit 103 and the control unit 104 that may be included in the imaging element 112 will be described in more detail.
  • the image sensor 112 is configured to perform pixel addition.
  • pixel addition may be, for example, reading signal charges acquired by a plurality of pixels in a batch, instead of reading signal charges acquired by a plurality of pixels for each pixel.
  • Examples of pixel addition methods include FD addition, capacity addition between adjacent vertical signal lines (VSL), and source follower addition.
  • the imaging device may be configured to perform any one or two or more of these pixel additions. Since the image sensor 112 is configured to perform pixel addition, the pixel addition by the pixel addition processing unit 108 in the present technology can be performed. In addition, during moving object detection, power consumption can be reduced by pixel addition processing compared to reading signal charges for each pixel.
  • a group of a plurality of pixels on which pixel addition is performed is also referred to as a pixel block.
  • FIG. 4 shows a configuration example of an image sensor that can perform pixel addition, in particular, a configuration example of a pixel array unit.
  • the pixel block 400 includes a pixel column in which a total of n pixels of the pixels 401-1 to 401-n connected to the vertical signal line 409 are arranged in the vertical direction.
  • the pixel block 400 may include columns of a plurality of pixels that are connected to other vertical signal lines and belong to the same row. Any of the pixels 401-1 to 401-n can have the same configuration.
  • the pixel 401-1 includes a photoelectric conversion element (hereinafter also referred to as PD) 402-1, a floating diffusion (also referred to as FD) 403-1, a transfer (also referred to as TRG) transistor 404-1, and a reset (also referred to as RST) transistor 405. -1, an amplification transistor 406-1, a selection transistor 407-1, and an FD link (hereinafter also referred to as FDL) transistor 408-1.
  • FD 403-1 is the first charge holding unit in the present technology
  • PD 402-1 is the second charge holding unit in the present technology.
  • the transfer transistor 404-1 is configured to be able to control transfer of signal charges accumulated in the PD 402-1 to the FD 403-1 by exposure.
  • the transfer transistor 404-1 may be provided between the wirings connecting the PD 402-1 and the FD 403-1.
  • the charge transfer control unit 107 can control the transfer of the signal charge stored in the PD 402-1 to the FD 403-1 by controlling the transfer transistor 404-1. For example, when the charge transfer control unit 107 turns on the transfer transistor 404-1, the signal charge accumulated in the PD 402-1 by exposure is transferred to the FD 403-1, and the signal charge is transferred to the FD 403-1. Retained. In addition, when the charge transfer control unit 107 turns off the transfer transistor 404-1, the signal charge accumulated in the PD 402-1 by exposure is held in the PD 402-1.
  • the FDL transistor 408-1 is configured to control the addition of charges held in the FD 403-1 in each pixel constituting one pixel block.
  • the FDL transistor 408-1 includes floating wirings (hereinafter referred to as FDL wirings) that connect the FDs 403-1 to 403-n of a plurality of pixels constituting one column in one pixel block. (Also referred to as 411). That is, in each pixel block, the FDs of the pixels are connected in the vertical direction by the FDL wiring.
  • the FDL wiring is configured to be switchable between a state where the FD is connected and a state where the FD is not connected.
  • the state where the FD is connected and the state where the FD is not connected can be switched.
  • the addition of the subframe signal charges held in the FD is performed by bringing the FDL wiring into the connected state. It can be said that the FDL wiring is a wiring for performing pixel addition.
  • the pixel addition processing unit 108 can control addition of signal charges held in the FD 403-1 by controlling the FDL transistor 408-1. For example, by turning on all the FDL transistors 408-1 to 408-n in each pixel constituting one pixel block, the signal charges held in the FD 403-1 to FD 403-n can be added.
  • a pixel to which signal charges are added can be selected, that is, a pixel constituting a pixel block can be selected.
  • all the FDL transistors 408-1 in the pixel region can be turned off. That is, the imaging apparatus 100 stops the pixel addition process by the pixel addition processing unit 108 in response to the detection of a moving object.
  • the RST transistor 405-1, the amplification transistor 406-1, and the selection transistor 407-1 may be configured to perform processing similar to signal charge processing in a normal CMOS image sensor, for example.
  • the pixel 401-1 may be connected to the vertical signal line 409 via the selection transistor 407-1. That is, the selection transistor 407-1 may be provided on a wiring connecting the vertical signal line 409 and the amplification transistor 406-1.
  • the amplification transistor 406-1 may be provided over a wiring connecting the selection transistor 407-1 and the FD 403-1.
  • the reset transistor 405-1 may be provided so that, for example, the FD 403-1 and / or the PD 402-1 can be reset to the power supply voltage 410-1. In FIG. 4, the reset transistor 405-1 is provided on a wiring connecting the FD 403-1 and the power supply voltage 410-1.
  • FIG. 4 is as described above in “(3-2) Configuration example of image pickup device included in image pickup apparatus”.
  • FIG. 5 is a schematic diagram (upper diagram) of the operation of the image sensor during the moving object detection by the image capturing apparatus 100 according to the present technology and during the imaging of the moving object after the moving object detection, and a timing chart regarding one pixel row in the operation ( ( Figure below).
  • FIG. 6 is a diagram illustrating a configuration example of the pixel array portion of the image sensor and its surroundings.
  • the processing of signal charges during moving object detection by the imaging apparatus 100 according to the present technology is different from the processing of signal charges for imaging by a general CMOS image sensor. Therefore, first, signal charge processing for imaging by a general CMOS image sensor will be described, and then signal charge processing in moving object detection by the imaging device 100 according to the present technology will be described.
  • P-phase output and D-phase output are acquired for reading out the output from each pixel, and a difference between these P-phase output and D-phase output is acquired. sell.
  • the difference can be used as an image signal based on the signal charge accumulated in the photoelectric conversion element of the pixel.
  • the P-phase output is an output obtained by resetting the FD by turning on the RST transistor and turning on the selection transistor after the reset. Further, the signal charge accumulated in the photoelectric conversion element by exposure is transferred to the FD by turning on the transfer transistor. The output based on the transferred signal charge is the D-phase output.
  • a difference different from the difference between the P-phase output and the D-phase output is acquired.
  • the difference obtained in the processing of signal charges during moving object detection by the imaging device 100 according to the present technology is obtained in one subframe among a plurality of subframe signal charges obtained by performing multiple exposures within one frame time. It may be a difference between an output (voltage signal) acquired based on the signal charge accumulated in the photoelectric conversion element and an output (voltage signal) acquired based on the other one subframe signal charge. More specifically, the difference is digital obtained as a result of AD conversion (down count) of one subframe signal (D phase signal) and AD conversion (up count) of another one subframe signal (D phase signal).
  • the output obtained in a state where the FD is reset is not used, that is, the P-phase output acquired in the above general CMOS image sensor is not used. It does not have to be used.
  • the imaging apparatus 100 performs imaging in the moving object detection mode in the period D1, that is, pixel addition processing by the pixel addition processing unit in the present technology is performed.
  • the schematic diagram shows that the moving object is not detected in the frame F n ⁇ 1 in the period D 1 and the moving object is detected in the next frame F n .
  • the point in time when the moving object is detected is P.
  • the imaging apparatus 100 changes the imaging method from the moving object detection mode to the moving object imaging mode. Change to charge processing.
  • Imaging device 100 in a period D 2 is performed imaging in the moving object image pickup mode.
  • the exposure period of the two exposures in one frame is called a subframe.
  • the first exposure period is a period indicated by t1 in the schematic diagram.
  • the second exposure period is a period indicated by t2 in the schematic diagram.
  • a period indicated by t1 and a period indicated by t2 are subframes of the frame F n ⁇ 1 .
  • the oblique line SH indicates the exposure start time of each row of the pixel array. In addition, although exposure can be started sequentially for each pixel row, the start point is indicated by a hatched line SH for convenience.
  • a hatched line TR indicates a time point at which the signal charge accumulated in the photoelectric conversion element during the exposure period t1 is transferred to the FD.
  • the transfer time is also the start time of the exposure period t2.
  • the transfer time is indicated by a diagonal line TR.
  • a hatched line RO indicates a point in time when the reading of the signal charge is started. That is, at the time of the oblique line RO, analog-digital conversion is started in each pixel row.
  • the period during which analog-digital conversion is performed is represented by a square on the line ADC.
  • moving object detection is performed simultaneously.
  • a period during which moving object detection is performed is represented by a square on a line S (Sensing).
  • the timing chart relates to one pixel row.
  • RST represents ON / OFF of the reset transistor
  • TRG represents ON / OFF of the transfer transistor
  • SEL represents ON / OFF of the selection transistor
  • VFL represents ON / OFF of the FDL transistor.
  • VFD represents the voltage of FD
  • VSL represents the voltage output from the vertical signal line.
  • CNT represents the count value that the counter holds at each time point. For example, the value of the counter is zero before AD conversion is started. When the AD conversion is started and the down count continues, the count value continues to change in a negative direction (downward slope), and during the up count continues, the count value changes in the positive direction. Continue (upward slope).
  • the count value held by the counter after the end of down-counting and up-counting can be a digital value representing the difference between the first voltage signal and the second voltage signal.
  • the PDs 402-1 to 402-n and the FDs 403-1 to 403-n in FIG. 4 are reset.
  • the reset may be performed, for example, by turning on the RST transistors 405-1 to 405-n and the transfer transistors 404-1 to 404-n.
  • the signal charges accumulated in the PDs 402-1 to 402-n during the exposure period t1 turn on the transfer transistors 404-1 to 404-n, so that the FDs 403-1 to 403-n Forwarded to each.
  • Each signal charge is held in each of the FDs 403-1 to 403-n.
  • the transfer control can be performed by the charge transfer control unit 107 controlling the vertical drive unit 605 in FIG.
  • the first subframe signal charge group held at ⁇ n is collectively output as a voltage signal to the vertical signal line 409. That is, the signal charge group is added and processed as a voltage signal from a pixel having the predetermined selection transistor.
  • the voltage signal conversion processing is performed by controlling the vertical driving unit 605 in FIG. 6 by the pixel addition processing unit 108 and / or controlling the column processing unit 602 in FIG. 6 by the pixel addition processing unit 108. Or may be performed by the pixel addition processing unit 108 itself.
  • the voltage signal is a first voltage signal used in moving object detection according to the present technology.
  • the first voltage signal may be stored in, for example, a sample hold circuit (not shown) placed in the column processing unit 602 in FIG. 6, or after AD conversion, the data storage unit in FIG. 603 may be stored.
  • a change in the digital count value indicated by (c) in the timing chart in FIG. 5 occurs.
  • the change amount (digital value corresponding to the voltage difference) of the digital count value indicated by (c) in the timing chart in FIG. 5 may be the first pixel signal.
  • the first pixel signal can be counted by down-counting.
  • the voltage signal conversion processing method may be performed by a method known to those skilled in the art. Examples of the method include, but are not limited to, single slope-analog digital conversion (SS-ADC).
  • Step 6 the FDs 403-1 to 403-n are reset.
  • the reset may be performed, for example, by turning on the RST transistors 405-1 to 405-n.
  • Step 7 the second subframe signal charges held in the PDs 402-1 to 402-n turn on the transfer transistors 404-1 to 404-n, so that the FDs 403-1 to 403-n Forwarded to each.
  • the transfer control can be performed by the charge transfer control unit 107 controlling the vertical drive unit 605 in FIG.
  • the voltage signal is a second voltage signal used in moving object detection according to the present technology.
  • the second voltage signal may be stored in, for example, a sample hold circuit (not shown) placed in the column processing unit 602 in FIG. 6, or after AD conversion, the data storage unit in FIG. 603 may be stored.
  • a change in the digital count value indicated by (d) in the timing chart in FIG. 5 occurs.
  • the change amount (digital value corresponding to the voltage difference) of the digital count value indicated by (d) in the timing chart in FIG. 5 can be the second pixel signal.
  • the second pixel signal can be counted by up-counting.
  • the voltage signal conversion processing method may be performed by a method known to those skilled in the art. Examples of the method include, but are not limited to, single slope-analog digital conversion (SS-ADC).
  • Step 9 the first voltage signal and the second voltage signal are compared.
  • the comparison may be performed using, for example, the difference between these two voltage signals.
  • a value obtained by dividing a difference between the first voltage signal and the second voltage signal by the first voltage signal, or a value obtained by dividing the first voltage signal by the second voltage signal is used.
  • the comparison may be performed based on a digital signal value obtained by converting a voltage signal obtained by pixel addition.
  • the calculation for obtaining these values can be performed by using, for example, an analog circuit, a logic circuit, or arbitrary software.
  • the comparison may be performed by the moving object detection unit 109.
  • Step 10 If no moving object is detected as a result of the comparison, for example, (Step 1) to (Step 9) are performed again after a blanking period during which exposure is not performed. If a moving object is detected as a result of the comparison, all of the FDL transistors 408-1 to 408-n are turned off, and signal charge processing is performed for each pixel. In other words, the imaging apparatus 100 stops the pixel addition process by the pixel addition processing unit 108 in response to detection of a moving object. That is, when a moving object is detected, the imaging method is changed to the moving object imaging mode. Imaging in the moving body imaging mode may be performed by signal charge processing performed in a normal CMOS image sensor.
  • any of the pixels 401-1 to 401-n can perform signal charge processing for imaging by a normal CMOS image sensor. Therefore, by performing signal charge processing in the general CMOS image sensor described above for each pixel, for example, in a state where all of the FDL transistors 408-1 to 408-n are turned off, a high-resolution image can be obtained. It is done. In the signal charge processing for each pixel, correlated double sampling (CDS) performed in, for example, a normal CMOS image sensor can be performed.
  • CDS correlated double sampling
  • a frame F n + 1 in FIG. 5 is a frame in which signal charge processing is performed for each pixel.
  • the process for each pixel block may be performed again, or after the signal charge process for each pixel is performed for a predetermined period, the process for each pixel block is performed again. May be performed.
  • the imaging apparatus 100 changes the imaging method to the moving object detection mode again. It can be changed. Alternatively, the imaging apparatus 100 may capture a moving image after detecting a moving object. In the case of moving image shooting, the resolution of the moving image may be lowered by, for example, pixel addition or thinning readout.
  • signal charge processing is performed for each pixel block during moving object detection by the imaging apparatus according to the present technology. That is, the number of read execution pixels is reduced. This reduces power consumption during moving object detection. Further, by using the imaging device according to the present technology, it is possible to image the moving object within one frame time after detecting the moving object (particularly, within one frame time in the moving object detection mode). Thereby, when a moving body moving at high speed is detected, it is possible to prevent the imaging of the moving body from being missed. Further, for example, in the device of Patent Document 1, a capacitive element is provided in a pixel as means for holding a subframe signal charge. For this reason, the saturation signal charge amount of the PD may be limited.
  • the device of Patent Document 1 since the device of Patent Document 1 includes a capacitive element in a pixel, it may not be a fine pixel.
  • FD is a first charge holding unit in the present technology
  • PD is a second charge holding unit in the present technology. Therefore, it is not necessary to provide a capacitor in the pixel for holding the subframe signal charge. As a result, the saturation signal charge amount of the PD can be increased.
  • FD dark current shot noise noise due to increase in dark current
  • reset noise may remain by not performing the CDS processing on the subframe signal charges held in the FD and / or PD.
  • 1 / f noise may occur in the amplification transistor. However, these noises are averaged or reduced by performing pixel addition in the moving object detection mode.
  • signal charge addition processing that is, signal charge processing for each pixel block
  • signal charge processing that is, pixel
  • the FDL transistors 408-1 to 408-n may be always turned on during the moving object detection mode, or may be turned on only at the timing when the pixel addition process is performed.
  • the signal charge addition processing may be performed by an image sensor other than the image sensor having the circuit shown in FIG.
  • An example of the circuit of the other image sensor is shown in FIG.
  • the pixels 701-1-1 to 701-1-N are connected to the vertical signal line 702-1.
  • the pixel groups in the other columns are also connected to the vertical signal lines.
  • Each vertical signal line is connected to an adjacent vertical signal line by a horizontal wiring provided with a switch (for example, a transistor).
  • the vertical signal line 702-1 and the vertical signal line 702-2 are connected by a horizontal wiring provided with a switch 703-1
  • the vertical signal line 702-2 and the vertical signal line 702-3 are connected.
  • the vertical signal line 702-1, the vertical signal line 702-2, and the vertical signal line 702-3 are electrically connected.
  • the vertical signal line 702-3 and the vertical signal line 702-4 are connected by a horizontal wiring provided with a switch 703-3, but the switch 703-3 is open, so the vertical signal line 702 is connected.
  • -3 and the vertical signal line 702-4 are not electrically connected.
  • Each vertical signal line is connected to a comparator via a switch (or transistor).
  • the vertical signal line 702-1 is connected to the comparator 705-1 by a wiring provided with the switch 704-1.
  • the vertical signal line 702-2 is connected to the comparator 705-2 by a wiring provided with a switch 704-2. As shown in FIG.
  • switches 703-1 and 703-2 are closed (or transistors 703-1 and 703-2 are on) and switch 703-3 is open (or Transistor 703-3 is off).
  • switch 704-1 is closed and switches 704-2 and 704-3 are open.
  • outputs from the vertical signal lines 702-1, 702-2, and 703-3 are collectively sent to the comparator 705-1.
  • adjacent vertical signal lines are controlled.
  • the pixel signal based on the signal charge output from can be added.
  • each of the pixel blocks vertical signal lines that transfer pixel signals based on signal charges held in each pixel in units of columns are connected in the horizontal direction by horizontal wiring
  • the horizontal wiring may be configured to be switchable between a state in which the vertical signal lines are connected and a state in which the vertical signal lines are not connected.
  • Addition of pixel signals based on signal charges held in each pixel is performed by bringing the horizontal wiring into the connected state.
  • the pixel signal addition processing based on the signal charges of the pixels in each row may be performed by turning on the selection transistor of the pixel to be added, or as described above with reference to FIG. This may be performed by turning on the FDL transistor provided on the wiring connecting the FDs of the pixels to be added.
  • three vertical signal lines are connected, but the number of connected vertical signal lines may be appropriately selected by those skilled in the art. For example, outputs from 2 to 128, particularly 4 to 64, more particularly 64, 32, 16, 8, or 4 vertical signal lines may be processed in a batch. Further, as shown in FIG. 7, the vertical signal line to be added may be selected by controlling a switch provided on a wiring connecting adjacent vertical signal lines.
  • the length of the exposure periods t1 and t2 may be appropriately selected by those skilled in the art. Alternatively, the lengths of the exposure periods t1 and t2 may be dynamically adjusted by a control unit (for example, a system control unit) based on, for example, an imaging result of a past frame obtained by processing by the signal processing unit.
  • a control unit for example, a system control unit
  • the lengths of the exposure periods t1 and t2 may be equal as shown in FIG. Since the exposure period t1 is equal to the exposure period t2, the first voltage signal and the second voltage signal can be easily compared.
  • the exposure period t1 may be longer than the exposure period t2.
  • the P-phase output in a general CMOS image sensor is not used. Therefore, the signal-to-noise ratio (SNR) of the first voltage signal may be reduced due to FD dark current shot noise. Accordingly, the exposure period t 1
  • the exposure period t1 By longer than the exposure period t2, it is possible to suppress a decrease in SNR.
  • the exposure period t1 may be longer than the exposure period t2.
  • the exposure period t1 may be, for example, 1.5 to 10 times, preferably 2 to 8 times, more preferably 2 to 6 times the exposure period t2.
  • the exposure period t1 can be four times the exposure period t2. If the exposure period t1 is longer than the exposure period t2, the analog gain of the second voltage signal is preferably greater than that of the first voltage signal, and a comparison of both voltage signals can be performed.
  • the magnification of the analog gain of the first voltage signal with respect to the analog gain of the second voltage signal may be the same as the magnification of the exposure period t1 with respect to the exposure period t2.
  • the analog gain of the second voltage signal may be four times the analog gain of the first voltage signal.
  • the pixel blocks are divided into two groups, a first group and a second group, and the frame time of the first group and the second group The frame time may be off.
  • An example of grouping pixel blocks is shown in FIG. In FIG. 10, each square is one pixel block.
  • the pixel block is divided into a first pixel group 1001 and a second pixel group 1002.
  • the first pixel group 1001 is exposed at the timing shown in the upper part of the drive schematic diagram shown in FIG. 11, and the second pixel group 1002 is shown in the lower part of the schematic diagram.
  • the exposure is performed at the timing shown in FIG. That is, in the moving object detection mode, the frame of the first pixel group 1001 starts before the frame of the second pixel group.
  • the frame of the second pixel group is the time when the previous subframe of the first pixel group 1001 ends and the subsequent subframe starts or after (that is, It may be started at the time when the exposure in the subframe is started or after the time).
  • the frame of the second pixel group may start, for example, after the start of the previous subframe of the first pixel group 1001 and before the start of the subsequent subframe.
  • the pixel blocks are divided in a grid pattern as shown in FIG. 11, the pixel blocks are grouped into odd groups of the pixel blocks as the first group and even rows of the pixel block as the second group.
  • the odd-numbered columns of pixel blocks may be divided into a first group and the even-numbered columns of pixel blocks may be divided into a second group.
  • the pixel blocks may be divided into three or more groups.
  • each pixel may be provided with an overflow gate that can reset the subframe signal charge held in the photoelectric conversion element.
  • An example of a circuit diagram of a pixel having such a configuration is shown in FIG.
  • the difference between the circuit diagram of the pixel shown in FIG. 13 and the circuit diagram of the pixel 401-1 shown in FIG. 4 is that the PD 1302 is connected to the power supply voltage 1310 via an overflow gate (also referred to as OFG) transistor 1312. It is that. Since the PD 1302 and the power supply voltage 1310 are connected by a wiring provided with the OFG transistor 1312, the charge accumulated in the PD 1302 can be reset by turning on the OFG transistor 1312.
  • Other components in the circuit diagram shown in FIG. 13 are the same as those described in the circuit diagram of the pixel 401-1 shown in FIG. 4. Therefore, for the description of the other components, see “(3-2) Configuration example of image sensor included in imaging device” above.
  • the subframe exposure time can be set independently of the subframe frame time.
  • the subframe interval (tsub, that is, the interval from the previous exposure start time to the subsequent exposure start time) may be selected based on, for example, the speed of the assumed moving object, or acquired by the signal processing unit. Based on the imaging result in the past frame, it may be dynamically adjusted by a control unit (for example, a system control unit).
  • the transfer transistor 1304 by turning on the transfer transistor 1304 after the exposure time t1 in the exposure of the previous subframe (SH 1 in FIG. 14) is completed, the data is accumulated in the PD 1302 during the exposure time t1.
  • the subframe signal charge is transferred to the FD 1303 (TR in FIG. 14).
  • the PD 1302 is continuously exposed, and charges are accumulated. Therefore, the signal charge accumulated in the PD 1302 is reset by turning on the OFG transistor 1312.
  • the signal charge accumulated in PD1302 is reset.
  • the charges accumulated in PD1302 in the exposure time t2 to read RO from the start of exposure SH 2 can be used as a subframe signal charges in accordance with the present technology.
  • each pixel block is divided into two groups of a first pixel group and a second pixel group, and the exposure time and the first pixel group The exposure time of the two pixel groups may be different.
  • the pixel block is divided into a first pixel group 1501 and a second pixel group 1502.
  • the first pixel group 1501 as shown in the schematic diagram of the drive shown in FIG. 16, for acquisition of the signal charges in the previous sub-frame, the exposure SH 1 is performed during the exposure period t1, and, In order to acquire signal charges in the subsequent subframe, exposure is performed during the exposure period t2 from the start of transfer of the previous subframe signal charge (TR).
  • the exposure SH 1S is performed during the exposure period t1 ′ in order to acquire the signal charge in the previous subframe
  • the exposure SH 2S is performed during the exposure period t2 ′ in order to acquire signal charges in the subsequent subframe.
  • t1 is longer than t1 ′
  • t2 is longer than t2 ′.
  • the exposure SH 2S not immediately after the exposure SH 1S is finished, is performed after the exposure SH 1S has elapsed further predetermined time after completion. For this reason, the PD signal charge of each pixel included in the second pixel group 1502 needs to be reset at the start of exposure SH 1S and SH 2S .
  • the reset can be performed.
  • t1 is longer than t1 ′ and t2 is longer than t2 ′
  • the moving object having low luminance is detected by the first pixel group
  • the moving object having high luminance is detected by the first pixel group.
  • This can be done with two pixel groups. Therefore, as described above, the pixel block is divided into two groups and the exposure period is different between the two groups, so that the range of luminance of the moving object that can be detected can be widened. Thereby, high dynamic range composition can be performed in the moving object detection mode.
  • the subframe signal charge amount exceeds the saturation charge amount of the charge holding unit, whiteout may occur, and the moving object may not be detected.
  • the luminance of the moving object is low, if the subframe signal charge amount is less than or equal to the noise level of the charge holding unit, blackout may occur and the moving object may not be detected.
  • all the pixels 2200 in one column may be connected to the FDL wiring 2202 through the FDL transistor 2201.
  • all the pixels 2200 are connected to the FDL wiring 2202 through the FDL transistor 2201 and connected to the vertical signal line 2204 through the selection transistor 2203.
  • the FDL transistor 2201 is provided over a wiring connecting the pixel 2200 and the FDL wiring 2202. Note that in FIG. 22, all rectangles having the same shape as the pixel 2200 are the same pixels as the pixel 2200, and the transistors provided on the left of each pixel are the same FDL transistors as the FDL transistors 2201.
  • any of the transistors provided on the right side of the pixel is the same selection transistor as the selection transistor 2203. Therefore, these reference numerals are omitted in FIG.
  • all the FDL transistors 2201 may be turned off at the time when the moving object detection mode is started.
  • pixel addition can be performed by turning on only the FDL transistor of the pixel to be added. For example, in order to add the signal charges of the pixels included in the pixel block 2205 among the pixels shown in FIG. 22, the FDL transistors 2201 of all the pixels included in the pixel block 2205 are turned on and included in the pixel block 2205.
  • FIG. 23 shows a pixel configuration example in which the FDL transistor 2201 in FIG. 22 is provided over the FDL wiring. As shown in FIG. 23, the FDL transistor 2301 is provided on the FDL wiring 2302. Also in the pixel configuration example shown in FIG. 23, as in the pixel configuration example in FIG. 22, by turning on the FDL transistor 2301 necessary for connecting the pixels to be added, Only signal charges can be added. In FIG. 23, a MOS switch may be provided instead of the FDL transistor 2301.
  • FIG. 1 is a block diagram of an example of the imaging apparatus.
  • the imaging element 112 particularly the pixel array unit 103 and the control unit 104 will be described in detail.
  • the other components are as described in the above “(2) First example (imaging device) of the first embodiment”. Therefore, the description of the other components is as described in (2) above. Please refer.
  • FIG. 17 shows a configuration example of an image sensor included in an imaging device that captures an image within the moving object detection frame, particularly a pixel array unit.
  • the configuration example of the image sensor shown in FIG. 17 has the following differences from the image sensor shown in FIG. That is, a wiring for connecting the PD 1702-1 and the transfer transistor 1704-1 is provided, and the second transfer transistor 1713-1 is provided on the wiring, and the second transfer transistor 1713-1 and the transfer transistor are connected.
  • a wiring connected to the ground from a position between the terminal 1704-1 and a memory (also referred to as a storage capacitor or an in-pixel memory) 1712-1 is provided on the wiring; and a PD 1702 17 is different from FIG.
  • FDL transistors 1708-1 to 1708-n are FDs 1703-1 to 1703 in pixels included in one pixel block. It is configured to be able to control the addition of charges held in n.
  • FD1703-1 is the first charge holding unit in the present technology
  • the memory 1712-1 is the second charge holding unit in the present technology.
  • the circuit configurations of the pixels 1701-1 to 1701-n are all the same.
  • the charge transfer control unit 107 controls the transfer transistor 1704-1 and the second transfer transistor 1713-1, so that the signal charge FD1703-1 or the memory 1712- stored in the PD 1702-1 is stored.
  • the transfer to 1 can be controlled. For example, when the charge transfer control unit 107 turns off the transfer transistor 1704-1 and turns on the second transfer transistor 1713-1, the signal charge accumulated in the PD 1702-1 by exposure is transferred to the memory 1712-1. Is done.
  • the signal charge held in the memory 1712-1 is transferred to the FD 1703-1 by the charge transfer control unit 107 turning on the transfer transistor 1704-1 and turning off the second transfer transistor 1713-1.
  • the signal charge is held in the FD 1703-1.
  • the charge transfer control unit 107 turns off the second transfer transistor 1713-1, the signal charge accumulated in the PD 1702-1 by exposure is held in the PD 1702-1.
  • the OFG transistor 1714-1 needs to be turned off.
  • the charge held in the PD 1702-1 can be reset by the OFG transistor 1714-1 provided in the pixel 1701-1.
  • the charge transfer control unit 107 can turn on the OFG transistor 1714-1 to perform the reset.
  • the moving object detection in the present embodiment is similar to the moving object detection described in “(3) Second example of the first embodiment (imaging device that captures an image within one frame time after moving object detection)”. This is different from signal charge processing for imaging by a CMOS image sensor. That is, in the moving object detection in this embodiment, the P-phase output acquired in a general CMOS image sensor may not be used.
  • FIG. 18 is a schematic diagram of the operation of the image sensor during the detection of the moving object by the imaging apparatus 100 according to the present technology and during the imaging of the moving object after the moving object is detected.
  • FIG. 18 time progresses from left to right.
  • the imaging apparatus 100 performs imaging in the moving object detection mode in the period D1, that is, pixel addition processing by the pixel addition processing unit in the present technology is performed.
  • FIG. 18 shows that no moving object is detected in the frame F n ⁇ 1 in the period D1, and a moving object is detected in the next frame F n .
  • the point in time when the moving object is detected is P.
  • the imaging apparatus 100 changes the imaging method from the moving object detection mode to the moving object imaging mode. Change to charge processing.
  • the imaging device 100 performs imaging in the moving object imaging mode in the period D2.
  • exposure is performed three times during one frame.
  • the exposure is performed three times during the frame F n ⁇ 1 .
  • the exposure period of the three exposures in one frame is called a subframe.
  • the first exposure period is a period indicated by t1 in FIG.
  • the second exposure period is a period indicated by t2 in FIG.
  • the third exposure period is a period indicated by t3 in FIG.
  • a period indicated by t1 to t3 is a subframe of frame Fn-1 .
  • Diagonal lines SH1, SH2, and SH3 indicate the exposure start time of each row of the pixel array.
  • the start time points are indicated by hatched lines SH1, SH2, and SH3 for convenience.
  • Each of the oblique lines TR1, TR2, and TR3 indicates the start time of transfer of the signal charge accumulated in the photoelectric conversion element to the FD or the memory in each of the exposure periods t1 to t3.
  • the start time points are indicated by hatched lines TR1, TR2, and TR3 for convenience.
  • a hatched line RO indicates a point in time when the reading of the signal charge is started. That is, at the time of the oblique line RO, analog-digital conversion is started in each pixel row.
  • the period during which analog-digital conversion is performed is represented by a square on the line ADC.
  • ADC In the period when ADC is performed, moving object detection is performed simultaneously.
  • a period during which moving object detection is performed is represented by a square on a line S (Sensing).
  • the processing performed during one frame is as follows.
  • PDs 1702-1 to 1702-n, memories 1712-1 to 1712-n, and FDs 1703-1 to 1703-n in FIG. 17 are reset.
  • the reset turns on the OFG transistors 1714-1 to 1714-n, the second transfer transistors 1713-1 to 1713-n, the RST transistors 1705-1 to 1705-n, and the transfer transistors 1704-1 to 1704-n. It may be done by doing.
  • Step 6 the first signal charges held in the memories 1712-1 to 1712-n are transferred to the FDs 1703-1 to 1703-n.
  • the first signal charge is held in the FDs 1703-1 to 1703-n.
  • the transfer is performed by turning on the transfer transistors 1704-1 to 1704-n while the second transfer transistors 1713-1 to 1713-n are off.
  • the transfer control is performed by the charge transfer control unit 107. This transfer is indicated by (d) in FIG.
  • Step 7 the second signal charges held in the PDs 1702-1 to 1702-n are transferred to the memories 1712-1 to 1712-n.
  • the second signal charge is held in the memories 1712-1 to 1712-n.
  • the transfer is performed by turning on the second transfer transistors 1713-1 to 1713-n while the transfer transistors 1704-1 to 1704-n are off.
  • the transfer control is performed by the charge transfer control unit 107. This transfer is indicated by (d) in FIG.
  • Step 9 Next, the PDs 1702-1 to 1702-n are exposed during the exposure period t3. As a result, the third signal charge is accumulated in each of the PDs 1702-1 to 1702-n.
  • the first subframe signal charge group held at ⁇ n is collectively output as a voltage signal to the vertical signal line 1709. That is, the signal charge group is added and processed as a voltage signal from a pixel having the predetermined selection transistor.
  • the voltage signal conversion processing is performed by controlling the vertical driving unit 605 in FIG. 6 by the pixel addition processing unit 108 and / or controlling the column processing unit 602 in FIG. 6 by the pixel addition processing unit 108. Or may be performed by the pixel addition processing unit 108 itself.
  • the voltage signal is a first voltage signal used in moving object detection according to the present technology.
  • the first voltage signal may be stored in, for example, a sample hold circuit (not shown) placed in the column processing unit 602 in FIG. 6, or after AD conversion, the data storage unit in FIG. 603 may be stored.
  • the voltage signal conversion processing method may be performed by a method known to those skilled in the art. Examples of the method include, but are not limited to, single slope-analog digital conversion (SS-ADC).
  • Step 11 Next, the FDs 1703-1 to 1703-n are reset.
  • the reset may be performed, for example, by turning on the RST transistors 1705-1 to 1705-n.
  • Step 12 the second subframe signal charges held in the memories 1712-1 to 1712-n are transferred to the FDs 1703-1 to 1703-n.
  • the transfer is performed by turning on the transfer transistors 1704-1 to 1704-n while the second transfer transistors 1713-1 to 1713-n are off.
  • Step 13 Next, by turning on all of the FDL transistors 1708-1 to 1708-n and turning on the predetermined one of the selection transistors 1707-1 to 1707-n, the FDs 1703-1 to The second subframe signal charge group held in 1703-n is output as a voltage signal to the vertical signal line 1709 at once. That is, the signal charge group is added and processed as a voltage signal from a pixel having the predetermined selection transistor.
  • the voltage signal conversion processing is performed by controlling the vertical driving unit 605 in FIG. 6 by the pixel addition processing unit 108 and / or controlling the column processing unit 602 in FIG. 6 by the pixel addition processing unit 108. Or may be performed by the pixel addition processing unit 108 itself.
  • the voltage signal is a second voltage signal used in moving object detection according to the present technology.
  • the second voltage signal may be stored in, for example, a sample hold circuit (not shown) placed in the column processing unit 602 in FIG. 6, or after AD conversion, the data storage unit in FIG. 603 may be stored.
  • Step 14 the first voltage signal and the second voltage signal are compared.
  • the comparison may be performed using, for example, the difference between these two voltage signals.
  • a value obtained by dividing a difference between the first voltage signal and the second voltage signal by the first voltage signal, or a value obtained by dividing the first voltage signal by the second voltage signal is used.
  • the comparison may be performed based on a digital signal value obtained by converting a voltage signal obtained by pixel addition.
  • the calculation for obtaining these values can be performed by using, for example, an analog circuit, a logic circuit, or arbitrary software.
  • the comparison may be performed by a moving object detection unit in the present technology.
  • Step 15 If no moving object is detected as a result of the comparison, (Step 1) to (Step 14) are performed again after a predetermined blanking period, that is, processing in the frame of the moving object detection mode is performed again. If a moving object is detected as a result of the comparison, all of the FDL transistors 1708-1 to 1708-n are turned off, and the third subframe signal charges held in the PDs 1702-1 to 1702-n are used. Perform processing for each pixel. That is, when a moving object is detected, the imaging method is changed to the moving object imaging mode. Imaging in the moving body imaging mode may be performed by signal charge processing performed in a normal CMOS image sensor.
  • any of the pixels 1701-1 to 1701-n can perform signal charge processing for imaging with a normal CMOS image sensor. Therefore, high-resolution images can be obtained by performing signal charge processing in, for example, the general CMOS image sensor described above for each pixel in a state where all of the FDL transistors 1708-1 to 1708-n are turned off. It is done. In the signal charge processing for each pixel, correlated double sampling (CDS) performed in, for example, a normal CMOS image sensor can be performed.
  • CDS correlated double sampling
  • the process for each pixel block may be performed again, or after the signal charge process for each pixel is performed for a predetermined period, the process for each pixel block is performed again. May be performed. That is, after the imaging mode is repeated a predetermined number of frames (for example, after imaging a plurality of still images) or after the imaging mode has elapsed for a predetermined period, the imaging apparatus 100 changes the imaging method to the moving object detection mode again. It can be changed. Alternatively, the imaging apparatus 100 may capture a moving image after detecting a moving object. In the case of moving image shooting, the resolution of the moving image may be lowered by, for example, pixel addition or thinning readout. In the frame F n + 1 , signal charge processing in the moving object detection mode may be performed again.
  • the signal charge addition process may be realized by an imaging device having another circuit.
  • the signal charge addition processing may be performed using a circuit as described with reference to FIG. 7 in the above “(3-3) Example of operation of imaging device”. That is, pixel addition may be performed by controlling a switch (for example, a transistor) provided on a horizontal wiring that connects adjacent vertical signal lines.
  • the lengths of the exposure periods t1 and t2 may be equal to each other as described with reference to FIG. As described with reference to FIG. 9 in “(3-3) Example of Operation of Imaging Device”, the exposure period t1 may be longer than the exposure period t2.
  • the pixel block includes the first group and the second group as described with reference to FIGS. 10 and 11 in “(3-3) Example of operation of imaging device”. The frame time of the first group and the frame time of the second group may be different from each other.
  • each pixel block is divided into two groups, a first pixel group and a second pixel group, and the exposure time of the first pixel group and the second pixel group
  • the exposure time of the pixel group may be different.
  • the pixel block is divided into a first pixel group 1501 and a second pixel group 1502.
  • the exposure SH 1 is acquired during the exposure period t1 (from SH 1 to TR1) in order to acquire signal charges in the first subframe.
  • the exposure SH 2 is performed in the exposure period t 2 (period from SH 2 to TR 2 ) to acquire the signal charges in the second subframe, and the signal charges in the third subframe exposure SH 3 is performed in the exposure period t3 (period from SH 3 to RO) for acquisition.
  • the second pixel group 1502 as shown in the drive schematic diagram shown in FIG. 20, for the acquisition of signal charges in the first subframe, for the acquisition of signal charges in the first subframe.
  • the exposure SH 1S is performed during the exposure period t1 ′ (period from SH 1S to TR1)
  • the exposure SH 2S is performed during the exposure period t2 ′ (period from SH 2S to TR2) in order to acquire signal charges in the second subframe.
  • the exposure SH 3S is performed during the exposure period t3 ′ (the period from SH 3S to RO) in order to acquire the signal charge in the third subframe.
  • t1 is longer than t1 ′
  • t2 is longer than t2 ′
  • t3 is longer than t3 ′.
  • the PD signal charge of each pixel included in the second pixel group 1502 needs to be reset at the start of exposure SH 1S and SH 2S .
  • the image sensor described above with reference to FIG. 17 includes an OFG transistor for resetting the PD in each pixel. Therefore, these image sensors can be reset. Accordingly, the exposure time of the first pixel group and the exposure time of the second pixel group can be made different.
  • the moving object having low luminance is detected by the first pixel group, and the moving object having high luminance is detected by the first pixel group.
  • This can be done with two pixel groups. Therefore, as described above, the pixel block is divided into two groups and the exposure period is different between the two groups, so that the range of luminance of the moving object that can be detected can be widened. Thereby, high dynamic range composition can be performed in the moving object detection mode.
  • t3 is longer than t3 ′, high dynamic range composition can be performed for an image captured in accordance with moving object detection.
  • FIG. 19 shows another configuration example of the image sensor included in the imaging device that captures an image within the moving object detection frame.
  • the image sensor configuration example shown in FIG. 19 is the same as the image sensor configuration example shown in FIG. 17 and wiring for transferring the signal charges accumulated in the PD 1902 directly to the FD 1903 without transferring them to the memory 1912. And the third transfer transistor 1915 on the wiring is provided.
  • FDL transistors 1908 (actually, as described in “(4-3) Example of operation of imaging device” above), FDL transistors 1908-1 to 1908 -n are performed. 1908. The same applies to the other symbols.) And only one predetermined selection transistor is turned on, so that the first subframe signal held in the FD 1903 of each pixel is turned on. The charge group is collectively output as a voltage signal to the vertical signal line 1909. That is, the first subframe signal charge group is added and treated as a voltage signal from a pixel having the predetermined selection transistor.
  • the voltage signal conversion processing is performed by controlling the vertical driving unit 605 in FIG. 6 by the pixel addition processing unit 108 and / or controlling the column processing unit 602 in FIG.
  • the voltage signal is a first voltage signal used in moving object detection according to the present technology.
  • the first voltage signal may be stored in, for example, a sample hold circuit (not shown) placed in the column processing unit 602 in FIG. 6, or after AD conversion, the data storage unit in FIG. 603 may be stored.
  • the voltage signal conversion processing method may be performed by a method known to those skilled in the art. Examples of the method include, but are not limited to, single slope-analog digital conversion (SS-ADC).
  • Step 11 Next, the FD 1903 is reset.
  • the reset may be performed by turning on the RST transistor 1905, for example.
  • Step 12 the third signal charge held in the PD 1902 is transferred to the FD 1903.
  • the transfer is performed by turning on the third transfer transistor 1915 while both the first transfer transistor 1903 and the second transfer transistor 1913 are off.
  • Step 13 Next, by turning on the FDL transistor 1908 and turning on only one predetermined selection transistor, the third subframe signal charge group held in the FD 1903 of each pixel is converted into a vertical signal.
  • a voltage signal is output to the line 1909. That is, the signal charge group is added and processed as a voltage signal from a pixel having the predetermined selection transistor.
  • the voltage signal conversion processing is performed by controlling the vertical driving unit 605 in FIG. 6 by the pixel addition processing unit 108 and / or controlling the column processing unit 602 in FIG. 6 by the pixel addition processing unit 108. Or may be performed by the pixel addition processing unit 108 itself.
  • the voltage signal is a second voltage signal used in moving object detection according to the present technology.
  • the second voltage signal may be stored in, for example, a sample hold circuit (not shown) placed in the column processing unit 602 in FIG. 6, or after AD conversion, the data storage unit in FIG. 603 may be stored.
  • Step 14 the first voltage signal and the second voltage signal are compared.
  • the comparison may be performed using, for example, the difference between these two voltage signals.
  • a value obtained by dividing a difference between the first voltage signal and the second voltage signal by the first voltage signal, or a value obtained by dividing the first voltage signal by the second voltage signal is used.
  • the comparison may be performed based on a digital signal value obtained by converting a voltage signal obtained by pixel addition.
  • the calculation for obtaining these values can be performed by using, for example, an analog circuit, a logic circuit, or arbitrary software.
  • the comparison may be performed by a moving object detection unit in the present technology.
  • Step 15 If no moving object is detected as a result of the comparison, (Step 1) to (Step 14) are performed again after a predetermined blanking period, that is, processing in the frame of the moving object detection mode is performed again. If a moving object is detected as a result of the comparison, the FDL transistor 1908 is turned off, and processing for each pixel is performed using the second signal charge held in the memory 1912. For example, the second signal charge can be transferred to the FD 1903, and then signal charge processing performed in a normal CMOS image sensor can be performed for each pixel using the second signal charge. In the signal charge processing for each pixel, correlated double sampling (CDS) performed in, for example, a normal CMOS image sensor can be performed.
  • CDS correlated double sampling
  • the FD 1903 is a first charge holding unit in the present technology
  • the PD 1902 is a second charge holding unit in the present technology.
  • moving object detection can be performed using the first subframe signal charge and the third subframe signal charge.
  • the high-resolution image is output using the second signal charge, the simultaneity between the moving object detection and the imaging can be improved.
  • the image sensor shown in FIG. 19 is provided with an OFG transistor for resetting the PD in each pixel. Therefore, the image sensor can perform the reset. Accordingly, the imaging device shown in FIG. 19 can have different exposure times for the first pixel group and the second pixel group, similarly to the imaging device shown in FIG.
  • FIG. 21 shows another configuration example of the image sensor included in the imaging device that captures an image within the moving object detection frame.
  • the imaging device configuration example shown in FIG. 21 is different from the imaging device configuration example shown in FIG. 17 in that the wiring for connecting the PD to the power supply voltage and the OFG transistor provided on the wiring are removed. To do.
  • the interval between subframes and the exposure time cannot be controlled independently.
  • the number of transistors included in the pixel can be reduced, the area for the PD and / or memory can be increased. As a result, the aperture ratio and saturation charge amount of the pixel can be increased.
  • FIG. 24 shows another configuration example of the image sensor included in the imaging device that captures an image within the moving object detection frame.
  • the imaging device configuration example shown in FIG. 24 is different from the imaging device configuration example shown in FIG. 21 in that it has two PDs and two second transfer transistors.
  • the FD, the memory, and the transfer transistor are shared by the two PDs 2402-1 and 2402-2.
  • moving object detection according to the present technology is performed using the imaging device, for example, two signal charges accumulated in the two PDs 2402-1 and 2402-2 are converted into the two second transfer transistors 2413-1 and 2413-2. May be added in memory by turning on simultaneously.
  • Such addition of signal charges in the memory can be performed in, for example, (Step 3) and (Step 7) described in “(4-3) Example of operation of imaging device”.
  • moving object detection according to the present technology is performed using the imaging device, for example, only one of the two signal charges accumulated in the two PDs 2402-1 and 2402-2 is transferred to the memory.
  • the second transfer transistor connected to the PD holding the signal charge to be transferred is turned on and the other second transfer transistor is turned off.
  • Such a transfer method is particularly useful when, for example, the two PDs are different (for example, pixels of different colors).
  • the output of each pixel is obtained by sequentially turning on the two second transfer transistors and sequentially reading out the signal charges held in the two PDs, that is, a high-resolution image. Is obtained.
  • FIG. 25 shows another configuration example of the image sensor included in the imaging device that captures an image within the moving object detection frame.
  • the imaging device configuration example shown in FIG. 25 is provided with a second wiring for transferring the signal charge accumulated in the PD to the FD, in addition to the imaging device configuration example shown in FIG.
  • the third transfer transistor 2516, the second memory 2515, and the fourth transfer transistor 2514 are provided on the second wiring.
  • the memory existing in the image sensor shown in FIG. 21 is referred to as a first memory 2512 and is distinguished from the second memory 2515.
  • each of the three subframe signal charges is held in any of the FD 2503, the first memory 2512, the second memory 2515, and the PD 2502.
  • Thenafter, an operation example of the image sensor when three subframe signal charges are held in the first memory 2512, the second memory 2515, and the PD 2502 will be described.
  • each pixel column of the image sensor is connected to adjacent vertical signal lines 2509 by wiring (not shown) provided with a switch, as shown in FIG. Shall. That is, by controlling the switch, the vertical signal line 2509 whose output is to be added can be selected.
  • the PD 2502, the first memory 2512, the second memory 2515, and the FD 2503 in FIG. 25 are reset.
  • the reset may be performed, for example, by turning on the first transfer transistor 2504, the second transfer transistor 2513, the third transfer transistor 2516, the fourth transfer transistor 2514, and the RST transistor 2505.
  • the PD 2502 is reset by turning on the OFG transistor. May be.
  • the first memory 2512 and the second memory 2515 may be reset by turning on the OFG transistor, the second transfer transistor 2513, and the fourth transfer transistor 2514.
  • the first signal charge accumulated in the PD 2502 is transferred to the first memory 2512 by turning on the second transfer transistor 2513.
  • the transfer control can be performed by the charge transfer control unit 107 controlling the vertical drive unit 605 in FIG.
  • the PD 2502 is exposed during the exposure period t2.
  • the exposure can be started immediately after the transfer in step 5 is performed.
  • the second signal charge is accumulated in the PD 2502.
  • Step 6 After the exposure period t2, the second signal charge accumulated in the PD 2502 is transferred to the second memory 2515 by turning on the fourth transfer transistor 2514.
  • Step 7 The PD 2502 is exposed during the exposure period t3.
  • the exposure can be started immediately after the transfer in step 7 is performed.
  • the third signal charge is accumulated in the PD 2502.
  • the voltage signal is a first voltage signal used in moving object detection according to the present technology.
  • the first voltage signal may be stored in, for example, a sample hold circuit (not shown) placed in the column processing unit 602 in FIG. 6, or after AD conversion, the data storage unit in FIG. May be stored.
  • Step 9 By turning on the RST transistor 2505, the FD 2503 is reset. After the reset, by turning on the third transfer transistor 2516, the second signal charge held in the second memory 2515 is transferred to the FD 2503, and the pixel signal voltage is output to the vertical signal line 2509.
  • the conversion process from the signal charge to the pixel voltage signal obtained by pixel addition is performed by controlling the 605 vertical driving unit in FIG. 6 by the pixel addition processing unit 108 and / or the column in FIG. 6 by the pixel addition processing unit 108. This can be performed by controlling the processing unit 602, or may be performed by the pixel addition processing unit 108 itself.
  • the voltage signal is a second voltage signal used in moving object detection according to the present technology.
  • the second voltage signal may be stored in, for example, a sample hold circuit (not shown) placed in the column processing unit 602 in FIG. 6, or after AD conversion, the data storage unit in FIG. 603 may be stored.
  • the column processing unit 602 compares the first voltage signal with the second voltage signal.
  • the comparison may be performed using, for example, the difference between these two voltage signals.
  • a value obtained by dividing a difference between the first voltage signal and the second voltage signal by the first voltage signal, or a value obtained by dividing the first voltage signal by the second voltage signal is used. Can be done.
  • the comparison may be performed based on a digital signal value obtained by converting a voltage signal obtained by pixel addition.
  • the calculation for obtaining these values can be performed by using, for example, an analog circuit, a logic circuit, or arbitrary software.
  • the comparison may be performed by a moving object detection unit in the present technology.
  • Step 12 If the moving object is not detected as a result of the comparison, (Step 1) to (Step 11) are performed on the next pixel block row. If (Step 1) to (Step 11) are performed for all the pixel block rows and no moving object is detected, (Step 1) to (Step 11) are performed again after a predetermined blanking period. Processing in the next frame of the mode is performed again. If a moving object is detected as a result of the comparison, the mode shifts to an imaging mode. Transition to the imaging mode is performed by turning off the FDL transistor 2508 turned on in (Step 1) and turning off the switch (703 in FIG. 7) that connects the vertical signal line 2509 in the horizontal direction. Is called.
  • signal charge processing performed in a normal CMOS image sensor can be performed for each pixel.
  • the FD 2503 is reset by turning on the RST transistor 2505. After the reset, the P phase signal is read.
  • the third transfer transistor 2516 is turned on, the third signal charge held in the second memory 2515 is transferred to the FD 2503 to read out the D-phase signal.
  • signal charge processing is performed by performing correlated double sampling (CDS) using the P-phase signal and the D-phase signal.
  • one subframe signal charge among a plurality of subframe signal charges obtained by performing exposure a plurality of times within one frame time is added for each pixel block, and the other one subframe signal is processed. Charges are added for each pixel block, and two voltage signals obtained as a result of these addition processes are compared to detect a moving object.
  • signal charge processing for each pixel is performed in a frame next to a frame in which a moving object is detected or in a frame in which a moving object is detected.
  • the signal charge is processed for each pixel in the frame immediately after the frame in which the moving object is detected, thereby imaging with low resolution with low power consumption. It is possible to immediately switch the imaging mode from the mode to the imaging mode with high resolution with high power consumption. For example, high-resolution imaging can be performed within one frame time after moving object detection.
  • the moving object detection in this way the above 1.
  • by processing the signal charge for each pixel for another subframe signal charge among the plurality of subframe signal charges A high-resolution image captured within the frame time of the frame in which the moving object is detected is obtained.
  • FIG. 1 is as described in “1. First embodiment (imaging device)”.
  • FIG. 12 is a diagram illustrating an example of a flow of an imaging method according to the present technology.
  • step S101 the imaging apparatus 100 starts an imaging process according to the present technology.
  • the imaging apparatus 100 performs moving object detection.
  • the imaging apparatus 100 adds pixel signals based on two subframe signal charges out of a plurality of subframe signal charges obtained by multiple exposures within one frame time for each pixel block.
  • the pixel signal of each subframe is acquired for each pixel block.
  • the imaging apparatus 100 performs moving object detection by comparing the two voltage signals obtained in this way.
  • the moving body detection step of step S102 includes, for example, a signal charge acquisition step of performing a plurality of exposures within one frame time to acquire a plurality of subframe signal charges, and among the plurality of subframe signal charges, A first charge holding step for holding one subframe signal charge in the first charge holding portion, and holding one other subframe signal charge in the second charge holding portion among the plurality of subframe signal charges. And adding a pixel signal based on the sub-frame signal charge held in the first charge holding unit for each pixel block composed of a plurality of pixels, for each pixel block. A first pixel addition processing step for acquiring a first voltage signal and a pixel signal based on a subframe signal charge held in the second charge holding unit for each pixel block.
  • a second pixel addition process for performing processing for obtaining a second voltage signal for each pixel block, and comparing the first voltage signal and the second voltage signal in each pixel block And a moving object detecting step of detecting a moving object based on the above.
  • step S102 for example, the above 1.
  • the moving object detection can be performed as described in “(4) Third example of the first embodiment (an imaging device that captures an image within the moving object detection frame)”. Therefore, the description of the operation of the imaging device and signal charge processing in the moving object detection is omitted. For these explanations, see 1. above. Refer to (2) to (4).
  • step S103 the imaging apparatus 100 determines whether a moving object is detected. When a moving body is not detected, the imaging device 100 returns the process to step S102 and performs the moving body detection step again. If a moving object is detected, the imaging apparatus 100 proceeds with the process to step 104.
  • the imaging device 100 images a moving object.
  • the imaging apparatus 100 first has, for example, the above 1.
  • “(3) Second example of first embodiment (imaging device that captures image within one frame time after motion detection)” or "(4) Third example of first embodiment (within motion detection frame) The imaging method is switched from the moving object detection mode to the imaging mode, as described in “Imaging device that performs imaging in FIG. More specifically, the signal charge processing method in the imaging apparatus 100 is switched from signal charge processing for each pixel block to signal charge processing for each pixel. The switching is performed, for example, as described in 1. above. Since it is as described in (3) or (4), detailed description is omitted, but for example, it can be performed by turning off the FDL transistor in the image sensor.
  • step S104 In the imaging process of step S104, the above 1.
  • a moving object As described in “(3) Second example of first embodiment (imaging device that captures an image within one frame time after motion detection)”, a moving object is imaged in a frame immediately after the frame in which the motion is detected. It's okay. Or the above 1.
  • the signal charge acquired in one subframe within the frame in which the moving object is detected is used. It may be used for moving body imaging.
  • step S105 the imaging apparatus 100 determines whether to end the imaging process.
  • the imaging apparatus 100 proceeds with the process to step S106.
  • the imaging apparatus 100 ends the imaging process in response to the target moving object being imaged. Can be judged.
  • the imaging apparatus 100 returns the process to step S102 and performs the moving object detection step again.
  • step S106 the imaging apparatus 100 ends the imaging process.
  • the moving object can be imaged within one frame time after the moving object is detected, or the moving object can be imaged within the frame in which the moving object is detected.
  • this technique can also take the following structures.
  • a charge transfer control unit that controls the transfer of the signal charge so as to hold the signal charge in the second charge holding unit;
  • the pixel signal based on the sub-frame signal charge held in the first charge holding unit is added to each pixel block composed of a plurality of pixels, and a first voltage signal is obtained for each pixel block.
  • Processing, Pixel addition based on the pixel signal based on the sub-frame signal charge held in the second charge holding unit is performed for each pixel block, and a second voltage signal is obtained for each pixel block.
  • a processing unit A moving object detection unit that detects a moving object based on a comparison between the first voltage signal and the second voltage signal in each pixel block;
  • An imaging apparatus comprising: a charge processing unit that processes signal charges for each pixel in response to detection of a moving object by the moving object detection unit.
  • the number of exposures within one frame time is 2,
  • the first charge holding portion is a floating diffusion;
  • the second charge holding portion is a photoelectric conversion element; Of the two subframe signal charges obtained by the two exposures, the charge transfer control unit holds the previous subframe signal charge in the floating diffusion and the subsequent subframe signal charge to the photoelectric conversion element. Control the transfer of signal charge to hold, [1]
  • the imaging apparatus according to [1].
  • each of the pixel blocks the floating diffusion of each pixel is connected by a floating wiring in the vertical direction,
  • the floating wiring is configured to be switchable between a state where the floating diffusion is connected and a state where the floating diffusion is not connected,
  • the addition of the pixel signal based on the subframe signal charge held in the floating diffusion is performed by bringing the floating wiring into the connected state.
  • each of the pixel blocks vertical signal lines for transferring signal charges held in each pixel in units of columns are connected in the horizontal direction by horizontal wirings,
  • the horizontal wiring is configured to be switchable between a state in which the vertical signal lines are connected and a state in which the vertical signal lines are not connected, Addition of pixel signals based on signal charges held in each pixel is performed by bringing the horizontal wiring into the connected state. [2] or [3]. [5]
  • the frame time of the previous subframe is equal to the frame time of the subsequent subframe, or the frame time of the previous subframe is longer than the frame time of the subsequent subframe. [2] to [4]
  • the imaging device according to any one of the above.
  • the pixel block is divided into two groups, a first group and a second group, The frame time of the first group is different from the frame time of the second group.
  • the imaging apparatus according to any one of [5].
  • Each pixel block is divided into two groups, a first pixel group and a second pixel group, The exposure time of the first pixel group and the exposure time of the second pixel group are different.
  • the imaging device according to any one of [7].
  • the comparison is a difference between the first voltage signal and the second voltage signal, a value obtained by dividing the difference by the first voltage signal, or the first voltage signal as the second voltage signal.
  • the imaging apparatus according to any one of [2] to [8], which is performed using a value divided by. [10] Among a plurality of subframe signal charges obtained by performing exposure a plurality of times within one frame time, one subframe signal charge is held in the first charge holding unit, and the other one subframe is stored.
  • a charge transfer control unit that controls the transfer of the signal charge so as to hold the signal charge in the second charge holding unit;
  • the pixel signal based on the sub-frame signal charge held in the first charge holding unit is added to each pixel block composed of a plurality of pixels, and a first voltage signal is obtained for each pixel block.
  • Processing, Pixel addition based on the pixel signal based on the sub-frame signal charge held in the second charge holding unit is performed for each pixel block, and a second voltage signal is obtained for each pixel block.
  • a processing unit A moving object detection unit that detects a moving object based on a comparison between the first voltage signal and the second voltage signal in each pixel block;
  • An image pickup apparatus comprising: a charge processing unit that processes, for each pixel, another sub-frame signal charge in a frame in which the moving object is detected in response to detection of a moving object by the moving object detection unit.
  • the number of exposures within one frame time is 3 or more,
  • the charge transfer control unit controls the transfer of signal charges so that the further one subframe signal charge is held in a third charge holding unit;
  • the first charge holding portion is a floating diffusion;
  • the second charge holding unit is a photoelectric conversion element or a memory;
  • the charge transfer control unit holds one subframe signal charge in the first charge holding unit among the three or more subframe signal charges obtained by the three or more exposures, and the subframe signal charge Control the transfer of signal charges so that any of the later subframe signal charges are held in the second charge holding unit, [10]
  • the imaging device according to [10].
  • each of the pixel blocks the floating diffusion of each pixel is connected in the vertical direction by a floating wiring,
  • the floating wiring is configured to be switchable between a state where the floating diffusion is connected and a state where the floating diffusion is not connected,
  • the addition of the pixel signal based on the subframe signal charge held in the floating diffusion is performed by bringing the floating wiring into the connected state.
  • each of the pixel blocks vertical signal lines for transferring the signal charges held in each pixel in units of columns are connected in the horizontal direction by horizontal wiring,
  • the horizontal wiring is configured to be switchable between a state in which the vertical signal lines are connected and a state in which the vertical signal lines are not connected, Addition of pixel signals based on signal charges held in each pixel is performed by bringing the horizontal wiring into the connected state.
  • the second charge holding portion is a photoelectric conversion element
  • the third charge holding unit is a memory; [11] The imaging apparatus according to any one of [13].
  • the pixels in each pixel block are divided into two groups, a first pixel group and a second pixel group, The exposure time of the first pixel group and the exposure time of the second pixel group are different.
  • the imaging apparatus according to any one of [14].
  • the frame time of the subframe used to generate the first voltage signal is equal to the frame time of the subframe used to generate the second voltage signal, or the former frame time
  • the imaging device according to any one of [11] to [15], wherein is longer than the latter frame time.
  • the pixels in each pixel block are divided into two groups, a first pixel group and a second pixel group,
  • the frame time of the subframe used to generate the first voltage signal is different from the frame time of the subframe used to generate the second voltage signal.
  • the imaging apparatus according to any one of [16].
  • one subframe signal charge is held in the first charge holding unit, and another one subframe A charge transfer control unit that controls the transfer of the signal charge so as to hold the signal charge in the second charge holding unit;
  • the pixel signal based on the sub-frame signal charge held in the first charge holding unit is added to each pixel block composed of a plurality of pixels, and a first voltage signal is obtained for each pixel block.
  • Pixel addition based on the pixel signal based on the sub-frame signal charge held in the second charge holding unit is performed for each pixel block, and a second voltage signal is obtained for each pixel block.
  • a processing unit A moving object detection unit that detects a moving object based on a comparison between the first voltage signal and the second voltage signal in each pixel block;
  • An imaging apparatus comprising: [19] A signal charge acquisition step of performing a plurality of exposures within one frame time to acquire a plurality of subframe signal charges; A first charge holding step of holding one subframe signal charge among the plurality of subframe signal charges in a first charge holding unit; A second charge holding step of holding the other one of the plurality of subframe signal charges in the second charge holding unit; The pixel signal based on the subframe signal charge held in the first charge holding unit is added to each pixel block composed of a plurality of pixels, and a first voltage signal is obtained for each pixel block.
  • a first pixel addition processing step A pixel signal based on the sub-frame signal charge held in the second charge holding unit is added for each pixel block, and a second voltage signal is obtained for each pixel block.
  • Pixel addition processing step A moving body detecting step of detecting a moving body based on a comparison between the first voltage signal and the second voltage signal in each pixel block.

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Abstract

La présente invention vise à imager un objet en mouvement dès que l'objet en mouvement est détecté. L'invention concerne un dispositif d'imagerie comprenant : une unité de contrôle de transfert de charge pour contrôler le transfert de charges de signal de telle sorte qu'une charge de signal de sous-trame, parmi une pluralité de charges de signal de sous-trame obtenues en exécutant une exposition plusieurs fois à l'intérieur d'une période de trame unique, soit maintenue dans une première unité de maintien de charge et qu'une autre charge de signal de sous-trame soit maintenue dans une seconde unité de maintien de charge ; une unité de traitement d'ajout de pixel pour exécuter un processus d'ajout de signaux de pixel sur la base de la charge de signal de sous-trame maintenue dans la première unité de maintien de charge pour chaque bloc de pixel composé d'une pluralité de pixels et acquérir un premier signal de tension pour chaque bloc de pixel, et un processus d'ajout de signaux de pixel sur la base de la charge de signal de sous-trame maintenue dans la seconde unité de maintien de charge pour chaque bloc de pixel et acquérir un second signal de tension pour chaque bloc de pixel ; et une unité de détection d'objet en mouvement pour détecter un objet en mouvement sur la base d'une comparaison dans chaque bloc de pixel entre le premier signal de tension et le second signal de tension.
PCT/JP2018/040935 2018-02-09 2018-11-05 Dispositif d'imagerie, et procédé d'imagerie WO2019155699A1 (fr)

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Citations (6)

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JP2017103726A (ja) * 2015-12-04 2017-06-08 キヤノン株式会社 撮像装置、撮像システム、撮像装置の駆動方法
JP2017112409A (ja) * 2015-12-14 2017-06-22 ソニー株式会社 撮像装置および方法
WO2017187811A1 (fr) * 2016-04-27 2017-11-02 ソニー株式会社 Dispositif et procédé de commande d'imagerie et appareil d'imagerie
JP2017220750A (ja) * 2016-06-06 2017-12-14 キヤノン株式会社 撮像装置、撮像システム
JP2018007035A (ja) * 2016-07-01 2018-01-11 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法
JP2018019191A (ja) * 2016-07-27 2018-02-01 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法

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Publication number Priority date Publication date Assignee Title
JP2017103726A (ja) * 2015-12-04 2017-06-08 キヤノン株式会社 撮像装置、撮像システム、撮像装置の駆動方法
JP2017112409A (ja) * 2015-12-14 2017-06-22 ソニー株式会社 撮像装置および方法
WO2017187811A1 (fr) * 2016-04-27 2017-11-02 ソニー株式会社 Dispositif et procédé de commande d'imagerie et appareil d'imagerie
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JP2018019191A (ja) * 2016-07-27 2018-02-01 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置、および、固体撮像素子の制御方法

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