WO2019153641A1 - 一种基于可控纳米裂纹的器件及其制备方法和控制方法 - Google Patents

一种基于可控纳米裂纹的器件及其制备方法和控制方法 Download PDF

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Publication number
WO2019153641A1
WO2019153641A1 PCT/CN2018/094931 CN2018094931W WO2019153641A1 WO 2019153641 A1 WO2019153641 A1 WO 2019153641A1 CN 2018094931 W CN2018094931 W CN 2018094931W WO 2019153641 A1 WO2019153641 A1 WO 2019153641A1
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Prior art keywords
metal electrode
ferroelectric material
crack
alloy film
voltage
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PCT/CN2018/094931
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English (en)
French (fr)
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游龙
罗强
郭喆
洪正敏
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华中科技大学
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Publication of WO2019153641A1 publication Critical patent/WO2019153641A1/zh

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
    • B81B7/0012—Protection against reverse engineering, unauthorised use, use in unintended manner, wrong insertion or pin assignment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor

Definitions

  • the invention belongs to the field of microelectronics technology, and more particularly to a device based on controllable nano cracks, a preparation method thereof and a control method thereof.
  • MEMS devices With the development of microelectronics technology, the characteristic size of transistors on integrated circuits is approaching the physical limit. If the device size is further reduced, there will be serious leakage problems.
  • the functional devices based on electro-mechanical coupling have the mechanical "on” and “off” characteristics, thus effectively avoiding the problem of leakage in the "off” state.
  • MEMS devices compared with traditional semiconductor devices, MEMS devices also have the advantages of large switching ratio, low power consumption, simple structure and process, etc., in terms of developing high-density, low-power, high-stability memories, transistors, and logic devices. With great development potential and application value.
  • the present invention provides a device based on controllable nanocracks, a preparation method thereof and a control method thereof, thereby solving the prior art that the switching speed is slow, the power consumption is high, and the crack is uncontrollable.
  • a device based on a controllable nanocrack includes a ferroelectric material, an alloy film, and a metal electrode, the metal electrode including a first metal electrode, a second metal electrode, and Third metal electrode,
  • the alloy film is located above the ferroelectric material, the first metal electrode and the second metal electrode are located at both ends of the alloy film, and the third metal electrode is located above or below the ferroelectric material.
  • ferroelectric material is PMN-PT, BTO, PZT, PIN-PT or PMN-PZT-PT
  • the alloy film is MnPt or FePt
  • the metal electrode is Au, Pt, Cu or Ag.
  • the ferroelectric material has a thickness of 0.1 mm to 1 mm
  • the alloy thin film has a thickness of 10 nm to 50 nm
  • the metal electrode has a thickness of 50 nm to 2 ⁇ m.
  • the third metal electrode is located above the ferroelectric material, the third metal electrode is located at both ends of the first metal electrode and the second metal electrode.
  • a method of fabricating a device based on a controllable nanocrack comprising:
  • the alloy film is grown on the upper surface of the ferroelectric material by magnetron sputtering, molecular beam epitaxy, pulsed laser deposition or atomic layer deposition, and the alloy film is etched into strips after photolithography or electron beam exposure. structure;
  • the ferroelectric material is PMN-PT, BTO, PZT, PIN-PT or PMN-PZT-PT
  • the alloy film is MnPt or FePt
  • the first metal electrode, the second metal electrode and the third metal electrode It is Au, Pt, Cu or Ag.
  • the ferroelectric material has a thickness of 0.1 mm to 1 mm
  • the alloy thin film has a thickness of 10 nm to 50 nm
  • the first metal electrode, the second metal electrode, and the third metal electrode have a thickness of 50 nm to 2 ⁇ m.
  • a control method of a device based on a controllable nanocrack comprising: a ferroelectric material, an alloy film, and a metal electrode, the metal electrode including a first metal electrode, and a second a metal electrode and a third metal electrode,
  • the alloy film is located above the ferroelectric material, the first metal electrode and the second metal electrode are located at two ends above the alloy film, and the third metal electrode is located above or below the ferroelectric material;
  • the control method of the device includes:
  • the third metal electrode When the third metal electrode is located under the ferroelectric material, by applying a vertical circulating voltage across the third metal electrode and the first metal electrode or across the third metal electrode and the second metal electrode, on the alloy film Produce cracks and further control the opening and closing of cracks;
  • the crack is generated and opened.
  • the amplitude of the circulating voltage is 60V-120V and the circulating voltage is positive, the crack is closed.
  • the length of the crack is from 10 ⁇ m to 20 ⁇ m, and the width of the crack is from 30 nm to 70 nm.
  • the third metal electrode When the third metal electrode is located above the ferroelectric material and the third metal electrode tip is perpendicular to the short strip of the alloy film, the third metal electrode is located at both ends of the first metal electrode and the second metal electrode, and passes through the third metal electrode
  • the cyclic voltage applied in the in-plane direction at both ends causes cracks on the alloy film and further controls the opening and closing of the crack.
  • the crack is generated and opened, and when the amplitude of the circulating voltage is 20V-40V and the circulating voltage is positive, the crack is closed.
  • the length of the crack is from 10 ⁇ m to 20 ⁇ m, and the width of the crack is from 30 nm to 70 nm.
  • the third metal electrode When the third metal electrode is located above the ferroelectric material and the third metal electrode tip is parallel to the short strip of the alloy film, the third metal electrode is located at both ends of the first metal electrode and the second metal electrode, and passes through the third metal electrode
  • the cyclic voltage applied in the in-plane direction at both ends generates a crack at the tip of the third metal electrode, and the crack propagates to the alloy film to break under the action of the circulating voltage, further controlling the opening and closing of the crack.
  • the first crack is closed and the second crack is opened.
  • the first The crack opens and the second crack closes.
  • the length of the crack is 20 ⁇ m to 50 ⁇ m, and the width of the crack is 30 nm to 70 nm.
  • the controllable nanocrack-based device of the present invention has no risk of leakage in the off state, and has non-volatility, repeatability, low power consumption, and fatigue resistance, and has a huge switch. Ratio and good stability, as a memory, the ability to store data for a long time. Therefore, such devices based on controllable nanocracks can be used in the future for information storage, electronically controlled switches, logic operations, and NEMS.
  • Micro-electromechanical devices based on controllable nano-cracks which use the electric field to drive the inversion of ferroelectric domains in ferroelectrics to realize the opening and closing of nano-cracks, have faster reaction time, fast switching speed and low power consumption. Great research significance and application potential.
  • the ferroelectric material selected by the invention is PMN-PT, BTO, PZT, PIN-PT or PMN-PZT-PT, and the power consumption is low.
  • the selected alloy film is MnPt or FePt, and has appropriate brittleness to make iron.
  • the nano-cracks generated in the electrical material can be broken through the film, and the selected metal electrode has good ductility and good electrical conductivity.
  • FIG. 1 is a schematic structural view of a device when a third metal electrode is disposed under a ferroelectric material according to an embodiment of the present invention
  • FIG. 2(a) is a first flow chart of a preparation method when a third metal electrode is located under the ferroelectric material according to an embodiment of the present invention
  • FIG. 2(b) is a second flow chart of the preparation method when the third metal electrode is located under the ferroelectric material according to the embodiment of the present invention
  • 2(c) is a third flow chart of the preparation method when the third metal electrode is located under the ferroelectric material according to the embodiment of the present invention
  • 2(d) is a fourth flow chart of the preparation method when the third metal electrode is located under the ferroelectric material according to the embodiment of the present invention.
  • FIG. 2(e) is a fifth flow chart of a preparation method when a third metal electrode is located under the ferroelectric material according to an embodiment of the present invention
  • 2(f) is a sixth flow chart of a method for preparing a third metal electrode under the ferroelectric material according to an embodiment of the present invention
  • 2(h) is a seventh flowchart of a preparation method when a third metal electrode is located under the ferroelectric material according to an embodiment of the present invention
  • 2(g) is an eighth flowchart of a preparation method when a third metal electrode is disposed under the ferroelectric material according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram of device testing when a third metal electrode is disposed under the ferroelectric material according to an embodiment of the present invention
  • FIG. 4(a) is a topological view of a device when a third metal electrode is disposed under the ferroelectric material according to an embodiment of the present invention
  • 4(b) is a top view showing an alloy film in an unpolarized state when a third metal electrode is positioned under the ferroelectric material according to an embodiment of the present invention
  • 4(c) is a top view showing the crack opening when the third metal electrode is located under the ferroelectric material according to the embodiment of the present invention.
  • 4(d) is a top view showing the crack closure when the third metal electrode is located under the ferroelectric material according to the embodiment of the present invention
  • FIG. 4(e) is an enlarged view of the broken line frame of FIG. 4(c) according to an embodiment of the present invention
  • FIG. 4(f) is an enlarged view of a broken line frame in FIG. 4(d) according to an embodiment of the present invention.
  • FIG. 5( a ) is a graph showing a cyclic voltage as a function of time when a third metal electrode is positioned under the ferroelectric material according to an embodiment of the present invention
  • FIG. 5(b) is a graph showing a change in current with a cyclic voltage when a third metal electrode is positioned under the ferroelectric material according to an embodiment of the present invention
  • FIG. 7 is a schematic structural view of a device in which a third metal electrode is positioned above a ferroelectric material and perpendicular to a short strip of an alloy film according to an embodiment of the present invention
  • FIG. 8(a) is a first flow chart of a preparation method when a third metal electrode is positioned above a ferroelectric material and perpendicular to a short strip of the alloy film according to an embodiment of the present invention
  • FIG. 8(b) is a second flow chart of a preparation method when a third metal electrode is positioned above the ferroelectric material and perpendicular to the short strip of the alloy film according to an embodiment of the present invention
  • Figure 8 (c) is a third flow chart of the preparation method of the third metal electrode provided above the ferroelectric material and perpendicular to the short strip of the alloy film according to the embodiment of the present invention
  • FIG. 8( d ) is a fourth flow chart of a preparation method when the third metal electrode is located above the ferroelectric material and perpendicular to the short strip of the alloy film according to the embodiment of the present invention
  • FIG. 8( e ) is a fifth flow chart of a preparation method when the third metal electrode is located above the ferroelectric material and perpendicular to the short strip of the alloy film according to the embodiment of the present invention
  • FIG. 8(f) is a sixth flow chart of a preparation method when a third metal electrode is positioned above a ferroelectric material and perpendicular to a short strip of the alloy film according to an embodiment of the present invention
  • FIG. 9 is a schematic diagram of device testing when a third metal electrode is positioned above a ferroelectric material and perpendicular to a short strip of an alloy film according to an embodiment of the present invention.
  • Figure 10 (a) is a top view of the device when the third metal electrode is positioned above the ferroelectric material and perpendicular to the short strip of the alloy film;
  • FIG. 10(b) is a top view of the alloy film in an unpolarized state when the third metal electrode is positioned above the ferroelectric material and perpendicular to the short strip of the alloy film according to the embodiment of the present invention
  • FIG. 10(c) is a top view showing the opening of a crack when the third metal electrode is positioned above the ferroelectric material and perpendicular to the short strip of the alloy film according to the embodiment of the present invention.
  • FIG. 10(d) is a top view showing a crack closure when the third metal electrode is positioned above the ferroelectric material and perpendicular to the short strip of the alloy film according to an embodiment of the present invention
  • FIG. 11( a ) is a graph showing a cyclic voltage as a function of time when a third metal electrode is positioned above the ferroelectric material and perpendicular to the short strip of the alloy film according to an embodiment of the present invention
  • FIG. 11(b) is a graph showing a current as a function of a cycle voltage when a third metal electrode is positioned above the ferroelectric material and perpendicular to the short strip of the alloy film according to an embodiment of the present invention.
  • FIG. 12 is a schematic structural view of a third metal electrode provided above a ferroelectric material and parallel to a short strip of an alloy film according to an embodiment of the present invention
  • FIG. 13(a) is a first flowchart of a preparation method when a third metal electrode is positioned above a ferroelectric material and parallel to a short strip of an alloy film according to an embodiment of the present invention
  • Figure 13 (b) is a second flow chart of the preparation method of the third metal electrode provided above the ferroelectric material and parallel to the short strip of the alloy film according to the embodiment of the present invention
  • Figure 13 (c) is a third flow chart of the preparation method when the third metal electrode is located above the ferroelectric material and parallel to the short strip of the alloy film according to the embodiment of the present invention
  • Figure 13 (d) is a fourth flow chart of the preparation method when the third metal electrode is located above the ferroelectric material and parallel to the short strip of the alloy film according to the embodiment of the present invention
  • Figure 13 (e) is a fifth flow chart of the preparation method of the third metal electrode provided above the ferroelectric material and parallel to the short strip of the alloy film according to the embodiment of the present invention
  • Figure 13 (f) is a sixth flow chart of the preparation method of the third metal electrode provided above the ferroelectric material and parallel to the short strip of the alloy film according to the embodiment of the present invention.
  • FIG. 14 is a schematic diagram of device testing when a third metal electrode is positioned above a ferroelectric material and parallel to a short strip of an alloy film according to an embodiment of the present invention
  • Figure 15 (a) is a top view of the device when the third metal electrode is positioned above the ferroelectric material and parallel to the short strip of the alloy film;
  • 15(b) is a top view of an alloy film in an unpolarized state when a third metal electrode is positioned above the ferroelectric material and parallel to the short strip of the alloy film according to an embodiment of the present invention
  • Figure 15 (c) is a top view showing the opening of the crack 1 opening crack 2 when the third metal electrode is positioned above the ferroelectric material and parallel to the short strip of the alloy film;
  • Figure 15 (d) is a top view showing the opening of the crack 1 closed crack 2 when the third metal electrode is positioned above the ferroelectric material and parallel to the short strip of the alloy film;
  • FIG. 16(a) is a graph showing a cyclic voltage as a function of time when a third metal electrode is positioned above the ferroelectric material and parallel to the short strip of the alloy film according to an embodiment of the present invention
  • FIG. 16(b) is a graph showing a current as a function of a cycle voltage when a third metal electrode is positioned above the ferroelectric material and parallel to the short strip of the alloy film according to an embodiment of the present invention.
  • the controlled device based nanocracks comprising ferroelectric material A, B and an alloy thin film metal electrode, said metal electrode comprising a first metal electrodes C 1, C 2 of the second metal and the third electrode
  • the metal electrode D is located above the ferroelectric material, the first metal electrode and the second metal electrode are located at both ends of the alloy film, and the third metal electrode is located below the ferroelectric material.
  • a method of preparing a cracked device comprising:
  • the alloy film is grown on the upper surface of the ferroelectric material by magnetron sputtering, molecular beam epitaxy, pulsed laser deposition or atomic layer deposition, and the alloy film is etched into strips after photolithography or electron beam exposure. structure;
  • a constant voltage U is applied between the top electrodes C 1 and C 2 to detect the opening and closing of the nano cracks.
  • FIG. 4(a) is a top view of a device when a third metal electrode is disposed under the ferroelectric material according to an embodiment of the present invention
  • FIG. 4(b) is a third metal electrode provided in the embodiment of the present invention
  • FIG. 4(c) is a top view showing the crack opening when the third metal electrode is located under the ferroelectric material according to the embodiment of the present invention
  • FIG. 4(d) Is a top view of the crack closure when the third metal electrode is located under the ferroelectric material according to the embodiment of the present invention
  • FIG. 4(e) is an enlarged view of the broken line frame of FIG. 4(c) provided by the embodiment of the present invention.
  • FIG. 4(f) is an enlarged view of the broken line frame of FIG.
  • FIG. 5( a ) is a graph showing a cyclic voltage as a function of time when a third metal electrode is disposed under the ferroelectric material according to an embodiment of the present invention
  • FIG. 5( b ) is a third metal electrode provided in the embodiment of the present invention.
  • the curve of the current as a function of the circulating voltage under the electrical material we apply a triangular cyclic voltage U 2 between C 1 (or C 2 ) and D to regulate the open and closed states of the nanocrack.
  • U 2 triangular cyclic voltage
  • U 2 between C 1 (or C 2 ) and D
  • U triangular cyclic voltage
  • the nano crack of the device provided by the embodiment of the present invention when the third metal electrode is located under the ferroelectric material still has good switching characteristics, indicating that the resistance is high. Good fatigue.
  • the present invention By applying a triangular cyclic voltage between the metal electrodes C 1 and D, the present invention first generates nanocracks on the ferroelectric material (A) in contact with the electrodes, and then the nanocracks penetrate the intermediate MnPt alloy film, thereby making it disconnect. When a nano-crack is generated in the middle, the second crack is not generated due to the stress release. Cracks also occur in the vicinity of the metal electrodes C 1 and C 2 , but do not penetrate the electrodes and do not affect the operation of the device.
  • a triangular cyclic voltage U 2 is applied between the metal electrodes C 1 and D, and a constant voltage U is applied between the metal electrodes C 1 and C 2 to detect the magnitude of the channel current I.
  • a positive and negative pulse P is applied between the metal electrodes C 1 and D, and a constant voltage U is also applied between the metal electrodes C 1 and C 2 to detect the magnitude of the channel current I.
  • the pulse is positive, the nanocrack will be closed, and the channel current I is large; when the pulse is negative, the nanocrack will open, and the channel current I is small. According to the detection of the change in the leakage current I, a simple logic function can be realized.
  • FIG. 7 a schematic diagram of a device structure in which a third metal electrode is located above a ferroelectric material and a third metal electrode tip is perpendicular to a short strip of an alloy film according to an embodiment of the present invention; a device based on controllable nanocracks Comprising a ferroelectric material A, an alloy film B and a metal electrode, the metal electrode comprising a first metal electrode C 1 , a second metal electrode C 2 and a third metal electrode D 1 and D 2 , the alloy film being located in the ferroelectric Above the material, the first metal electrode and the second metal electrode are located at two ends above the alloy film, the third metal electrode is located above the ferroelectric material, and D 1 and D 2 are located at the first metal electrode and the second metal Both ends of the electrode are perpendicular to the short strip of the alloy film.
  • a method for preparing a device based on a controllable nanocrack includes:
  • the alloy film is grown on the upper surface of the ferroelectric material by magnetron sputtering, molecular beam epitaxy, pulsed laser deposition or atomic layer deposition, and the alloy film is etched into strips after photolithography or electron beam exposure. structure;
  • Nanocracks are generated inside the ferroelectric material. Since the tip end of the metal electrode is the closest, the electric field strength between the tips of the two electrodes is the largest, and thus the crack is first generated to break the intermediate alloy film B. When a crack is generated, no other cracks will occur due to the stress release.
  • Figure 10 (a) is a top view of the device when the third metal electrode is disposed above the ferroelectric material according to the embodiment of the present invention; and Figure 10 (b) is a third metal electrode provided by the embodiment of the present invention.
  • FIG. 10(c) is a top view showing the crack opening when the third metal electrode is positioned above the ferroelectric material according to the embodiment of the present invention;
  • FIG. 10 (b) is a top view showing the crack opening when the third metal electrode is positioned above the ferroelectric material according to the embodiment of the present invention.
  • 10(d) Is a top view of the crack closure when the third metal electrode is located above the ferroelectric material according to the embodiment of the present invention; it can be seen that when the third metal electrode is located above the ferroelectric material, the third metal electrode is located at the Both ends of a metal electrode and a second metal electrode generate cracks on the alloy film by applying a circulating voltage across the third metal electrode and further control the opening and closing of the crack.
  • the amplitude of the circulating voltage is 30V-50V and the circulating voltage is negative, the crack is generated and opened.
  • the amplitude of the circulating voltage is 20V-40V and the circulating voltage is positive, the crack is closed.
  • the length of the crack is from 10 ⁇ m to 20 ⁇ m, and the width of the crack is from 30 nm to 70 nm.
  • a triangular cyclic voltage U 4 is applied between the metal electrodes D 1 and D 2 to regulate the opening and closing states of the nanocracks.
  • the electrodes C 1 and C 2 are disconnected.
  • the current I is small.
  • the electrodes C 1 and C 2 are turned on, and the current is large, as shown in Fig. 11(b). Shown. After five consecutive tests, it was found that the opening and closing of the nanocracks was relatively stable.
  • the present invention by applying a triangular loop voltage between the metal electrodes D 1 and D 2, since the maximum metal electrodes D 1 and D 2 are the nearest local electric field strength, and thus will be away from the electrode tip nearest ferroelectric material A
  • the interior first produces nano-cracks, and then the nano-cracks penetrate through the inter-alloy alloy film B to break it.
  • the second crack is not generated due to the stress release.
  • the cracks when cracks occur in the vicinity of the metal electrodes C 1 and C 2 , the cracks do not penetrate the upper metal electrodes C 1 and C 2 and do not affect the operation of the device.
  • a triangular cyclic voltage is applied between the metal electrodes D 1 and D 2 , and a constant voltage U is applied between the metal electrodes C 1 and C 2 to detect the magnitude of the channel current I between C 1 and C 2 .
  • a constant voltage U is applied between the metal electrodes C 1 and C 2 to detect the magnitude of the channel current I between C 1 and C 2 .
  • the nano-crack will be closed, and the channel current I will be large; when the voltage U 4 is negative, the nano-crack will open. At this time, the channel current I will be small. According to the change of the detection channel current I, a simple logic function can be realized.
  • FIG. 12 is a schematic diagram of a device structure when a third metal electrode is located above a ferroelectric material and a third metal electrode tip is parallel to a short strip of an alloy film according to an embodiment of the present invention; a device based on a controllable nanocrack Comprising a ferroelectric material A, an alloy film B and a metal electrode, the metal electrode comprising a first metal electrode (C 1 , C 2 , C 3 ), a second metal electrode (C 4 , C 5 , C 6 ) and a Three metal electrodes D 1 and D 2 , the alloy film is located above the ferroelectric material, the first metal electrode and the second metal electrode are located at the left and right ends of the alloy film, and the third metal electrode is located at the ferroelectric material Above, D 1 and D 2 are located at both ends of the first metal electrode and the second metal electrode and are parallel to the short strip of the alloy film.
  • a method for preparing a device based on a controllable nanocrack includes:
  • the alloy film is grown on the upper surface of the ferroelectric material by magnetron sputtering, molecular beam epitaxy, pulsed laser deposition or atomic layer deposition, and the alloy film is etched into strips after photolithography or electron beam exposure. structure;
  • a constant voltage U is applied between the metal electrodes C 1 and C 2 (again, C 2 and C 3 , C 4 and C 5 , C 5 and C 6 ) to detect the opening and closing of the nanocracks.
  • FIG. 15( a ) is a top view of a device in which a third metal electrode is positioned above a ferroelectric material and a third metal electrode tip is parallel to a short strip of the alloy film according to an embodiment of the present invention
  • FIG. 15( b ) is an embodiment of the present invention
  • the top view of the alloy film is provided in the unpolarized state when the third metal electrode is located above the ferroelectric material and the third metal electrode tip is parallel to the short strip of the alloy film
  • FIG. 15(c) is provided by the embodiment of the present invention.
  • FIG. 15(d) is a third view of the embodiment of the present invention.
  • the third metal electrode is located above the ferroelectric material and the third metal electrode tip is parallel to the short film of the alloy film.
  • a triangular cyclic voltage U 6 is applied between the metal electrodes D 1 and D 2 to regulate the open and closed states of the nano cracks 1 and 2.
  • the electrodes C 1 and C 2 are disconnected.
  • the current I is small.
  • the electrodes C 1 and C 2 are turned on, and the current is large, as shown in Fig. 16 (b). ) shown.
  • the ferroelectric material A is selected from a (001) crystal orientation Pb (Mg 1/3 , Nb 2/3 ) O 3 -30% PbTiO 3 (PMN-PT) ferroelectric ceramic.
  • Pb Mg 1/3 , Nb 2/3 ) O 3 -30% PbTiO 3 (PMN-PT) ferroelectric ceramic.
  • BaTiO 3 (BTO), Pb (Zr 1-x Ti x )O 3 (PZT), PIN-PT, PMN-PZT-PT, or the like can also be used.
  • a method for preparing a device based on a controllable nanocrack comprising:
  • An alloy thin film is grown on the upper surface of the ferroelectric material by magnetron sputtering, and after etching the alloy thin film, the alloy thin film is etched into a strip structure; a first metal electrode is deposited on both ends of the alloy thin film by photolithography a second metal electrode; depositing a third metal electrode on the lower surface of the ferroelectric material to obtain a device based on the controllable nanocrack.
  • the ferroelectric material is PMN-PT, the alloy film is MnPt, the first metal electrode and the second metal electrode are Pt, and the third metal electrode is Ag.
  • the ferroelectric material has a thickness of 0.5 mm, the alloy thin film has a thickness of 35 nm, and the first metal electrode, the second metal electrode, and the third metal electrode have a thickness of 100 nm.
  • the control method of the device includes:
  • cracks are generated on the alloy film by applying a circulating voltage across the third metal electrode and the first metal electrode or across the third metal electrode and the second metal electrode. Crack opening and closing; when the amplitude of the circulating voltage is 120V and the circulating voltage is negative, the crack is generated and opened. When the amplitude of the circulating voltage is 100V and the circulating voltage is positive, the crack is closed. The length of the crack was 10 ⁇ m, and the width of the crack was 52 nm.
  • a method for preparing a device based on a controllable nanocrack comprising:
  • the alloy thin film is grown on the upper surface of the ferroelectric material by molecular beam epitaxy, and after the electron beam exposure of the alloy thin film, the alloy thin film is etched into a strip structure; the first metal electrode is deposited on both ends of the alloy thin film by sputtering method and a second metal electrode; depositing a third metal electrode on the lower surface of the ferroelectric material to obtain a device based on the controllable nanocrack.
  • the ferroelectric material is BTO
  • the alloy thin film is FePt
  • the first metal electrode, the second metal electrode, and the third metal electrode are Au, Au, and Cu, respectively.
  • the ferroelectric material has a thickness of 0.7 mm
  • the alloy thin film has a thickness of 20 nm
  • the first metal electrode, the second metal electrode, and the third metal electrode have a thickness of 80 nm.
  • the control method of the device includes:
  • cracks are generated and controlled in the alloy film by applying a circulating voltage across the third metal electrode and the first metal electrode or across the third metal electrode and the second metal electrode. Crack opening and closing; when the amplitude of the circulating voltage is 200V and the circulating voltage is negative, the crack is generated and opened. When the amplitude of the circulating voltage is 120V and the circulating voltage is positive, the crack is closed. The length of the crack was 20 ⁇ m, and the width of the crack was 50 nm.
  • a method for preparing a device based on a controllable nanocrack comprising:
  • the alloy thin film is grown by pulsed laser deposition on the surface of the ferroelectric material, and after etching the alloy thin film, the alloy thin film is etched into a strip structure; the first metal electrode is deposited on both ends of the alloy thin film by electron beam evaporation method and a second metal electrode; a third metal electrode is deposited on both ends of the first metal electrode and the second metal electrode on the upper surface of the ferroelectric material to obtain a device based on the controllable nanocrack.
  • the ferroelectric material is PZT, the alloy thin film is MnPt, the first metal electrode and the second metal electrode are Pt, and the third metal electrode is Ag.
  • the ferroelectric material has a thickness of 0.1 mm, the alloy thin film has a thickness of 10 nm, and the first metal electrode, the second metal electrode, and the third metal electrode have a thickness of 50 nm.
  • the control method of the device includes:
  • the third metal electrode When the third metal electrode is located above the ferroelectric material and the third electrode tip is perpendicular to the short strip of the alloy film, the third metal electrode is located at both ends of the first metal electrode and the second metal electrode, and passes through two of the third metal electrodes
  • the end applied cyclic voltage creates cracks on the alloy film and controls the opening and closing of the crack.
  • the amplitude of the circulating voltage is 150 V and the circulating voltage is negative, cracks are generated and turned on.
  • the amplitude of the circulating voltage When the amplitude of the circulating voltage is 60 V and the circulating voltage is positive, the crack is closed.
  • the length of the crack was 15 ⁇ m, and the width of the crack was 55 nm.
  • a method for preparing a device based on a controllable nanocrack comprising:
  • An alloy thin film is deposited on the surface of the ferroelectric material by atomic layer deposition, and after exposing the alloy thin film to electron beam exposure, the alloy thin film is etched into a strip structure; a first metal electrode is deposited on both ends of the alloy thin film by photolithography; a second metal electrode; a third metal electrode is deposited on both ends of the first metal electrode and the second metal electrode on the upper surface of the ferroelectric material to obtain a device based on the controllable nanocrack.
  • the ferroelectric material is PIN-PT, the alloy film is MnPt, the first metal electrode and the second metal electrode are Pt, and the third metal electrode is Ag.
  • the ferroelectric material has a thickness of 1 mm, the alloy thin film has a thickness of 50 nm, and the first metal electrode, the second metal electrode, and the third metal electrode have a thickness of 2 ⁇ m.
  • the control method of the device includes:
  • the third metal electrode When the third metal electrode is located above the ferroelectric material and the third electrode tip is perpendicular to the short strip of the alloy film, the third metal electrode is located at both ends of the first metal electrode and the second metal electrode, and passes through two of the third metal electrodes
  • the end applied cyclic voltage creates cracks on the alloy film and controls the opening and closing of the crack.
  • the amplitude of the circulating voltage is 50 V and the circulating voltage is in the negative direction, the crack is generated and opened, and when the amplitude of the circulating voltage is 40 V and the circulating voltage is positive, the crack is closed.
  • the length of the crack was 14 ⁇ m, and the width of the crack was 53 nm.
  • a method for preparing a device based on a controllable nanocrack comprising:
  • An alloy thin film is grown on the upper surface of the ferroelectric material by magnetron sputtering, and after etching the alloy thin film, the alloy thin film is etched into a strip structure; a first metal electrode is deposited on both ends of the alloy thin film by photolithography a second metal electrode; a third metal electrode is deposited on both ends of the first metal electrode and the second metal electrode on the upper surface of the ferroelectric material to obtain a device based on the controllable nanocrack.
  • the ferroelectric material is PMN-PZT-PT, the alloy film is MnPt, the first metal electrode and the second metal electrode are Pt, and the third metal electrode is Ag.
  • the ferroelectric material has a thickness of 0.5 mm, the alloy thin film has a thickness of 30 nm, and the first metal electrode, the second metal electrode, and the third metal electrode have a thickness of 1 ⁇ m.
  • the control method of the device includes:
  • the third metal electrode When the third metal electrode is located above the ferroelectric material and the third electrode tip is perpendicular to the short strip of the alloy film, the third metal electrode is located at both ends of the first metal electrode and the second metal electrode, and passes through two of the third metal electrodes
  • the end applied cyclic voltage creates cracks on the alloy film and controls the opening and closing of the crack.
  • the amplitude of the circulating voltage is 30 V and the circulating voltage is in the negative direction, cracks are generated and opened.
  • the amplitude of the circulating voltage When the amplitude of the circulating voltage is 20 V and the circulating voltage is positive, the crack is closed.
  • the length of the crack was 13 ⁇ m, and the width of the crack was 54 nm.
  • a method for preparing a device based on a controllable nanocrack comprising:
  • An alloy thin film is grown on the upper surface of the ferroelectric material by magnetron sputtering, and after etching the alloy thin film, the alloy thin film is etched into a strip structure; a first metal electrode is deposited on both ends of the alloy thin film by photolithography a second metal electrode; a third metal electrode is deposited on both ends of the first metal electrode and the second metal electrode on the upper surface of the ferroelectric material to obtain a device based on the controllable nanocrack.
  • the ferroelectric material is PMN-PZT-PT, the alloy film is MnPt, the first metal electrode and the second metal electrode are Pt, and the third metal electrode is Ag.
  • the ferroelectric material has a thickness of 0.5 mm, the alloy thin film has a thickness of 30 nm, and the first metal electrode, the second metal electrode, and the third metal electrode have a thickness of 200 nm.
  • the control method of the device includes:
  • the third metal electrode When the third metal electrode is located above the ferroelectric material and the third electrode tip is perpendicular to the short strip of the alloy film, the third metal electrode is located at both ends of the first metal electrode and the second metal electrode, and passes through two of the third metal electrodes
  • the end applied cyclic voltage creates cracks on the alloy film and controls the opening and closing of the crack.
  • the amplitude of the circulating voltage is 40 V and the circulating voltage is in the negative direction, the crack is generated and opened, and when the amplitude of the circulating voltage is 30 V and the circulating voltage is positive, the crack is closed.
  • the length of the crack was 13 ⁇ m, and the width of the crack was 54 nm.
  • a method for preparing a device based on a controllable nanocrack comprising:
  • An alloy thin film is grown on the upper surface of the ferroelectric material by magnetron sputtering, and after etching the alloy thin film, the alloy thin film is etched into a strip structure; a first metal electrode is deposited on both ends of the alloy thin film by photolithography a second metal electrode; a third metal electrode is deposited on both ends of the first metal electrode and the second metal electrode on the upper surface of the ferroelectric material to obtain a device based on the controllable nanocrack.
  • the ferroelectric material is PMN-PT, the alloy thin film is MnPt, the first metal electrode and the second metal electrode are Pt, and the third metal electrode is Ag.
  • the ferroelectric material has a thickness of 0.5 mm, the alloy thin film has a thickness of 40 nm, and the first metal electrode, the second metal electrode, and the third metal electrode have a thickness of 100 nm.
  • the control method of the device includes:
  • the third metal electrode When the third metal electrode is located above the ferroelectric material and the third metal electrode tip is parallel to the short strip of the alloy film, the third metal electrode is located at both ends of the first metal electrode and the second metal electrode, and passes through the third metal electrode
  • the application of a circulating voltage at both ends produces two cracks near the tip of the metal electrode. Under the action of the circulating voltage, the crack penetrates into the alloy film and opens and closes as the polarity of the voltage changes.
  • the amplitude of the circulating voltage is 150 V, cracks are generated at the tip of the electrode and spread through the alloy film toward both ends.
  • the crack 1 opens the crack 2
  • the amplitude of the circulating voltage is 100 V and the circulating voltage is positive
  • the crack 1 closes the crack 2 to open.
  • the length of the crack was 30 ⁇ m
  • the width of the crack was 54 nm.
  • a method for preparing a device based on a controllable nanocrack comprising:
  • An alloy thin film is grown on the upper surface of the ferroelectric material by magnetron sputtering, and after etching the alloy thin film, the alloy thin film is etched into a strip structure; a first metal electrode is deposited on both ends of the alloy thin film by photolithography a second metal electrode; a third metal electrode is deposited on both ends of the first metal electrode and the second metal electrode on the upper surface of the ferroelectric material to obtain a device based on the controllable nanocrack.
  • the ferroelectric material is PMN-PZT-PT, the alloy film is MnPt, the first metal electrode and the second metal electrode are Pt, and the third metal electrode is Ag.
  • the ferroelectric material has a thickness of 0.3 mm, the alloy thin film has a thickness of 50 nm, and the first metal electrode, the second metal electrode, and the third metal electrode have a thickness of 500 nm.
  • the control method of the device includes:
  • the third metal electrode When the third metal electrode is located above the ferroelectric material and the third metal electrode tip is parallel to the short strip of the alloy film, the third metal electrode is located at both ends of the first metal electrode and the second metal electrode, and passes through the third metal electrode
  • the application of a circulating voltage at both ends produces two cracks near the tip of the metal electrode. Under the action of the circulating voltage, the crack penetrates into the alloy film and opens and closes as the polarity of the voltage changes.
  • the amplitude of the circulating voltage is 200 V, cracks are generated at the tip of the electrode and spread through the alloy film toward both ends.
  • the crack 1 opens the crack 2
  • the amplitude of the circulating voltage is 120 V and the circulating voltage is positive
  • the crack 1 closes the crack 2 to open.
  • the length of the crack was 35 ⁇ m
  • the width of the crack was 50 nm.
  • a method for preparing a device based on a controllable nanocrack comprising:
  • An alloy thin film is deposited on the surface of the ferroelectric material by atomic layer deposition, and after exposing the alloy thin film to electron beam exposure, the alloy thin film is etched into a strip structure; a first metal electrode is deposited on both ends of the alloy thin film by photolithography; a second metal electrode; a third metal electrode is deposited on both ends of the first metal electrode and the second metal electrode on the upper surface of the ferroelectric material to obtain a device based on the controllable nanocrack.
  • the ferroelectric material is PMN-PT, the alloy film is CoPt, the first metal electrode and the second metal electrode are Pt, and the third metal electrode is Ag.
  • the ferroelectric material has a thickness of 1 mm, the alloy thin film has a thickness of 50 nm, and the first metal electrode, the second metal electrode, and the third metal electrode have a thickness of 300 nm.
  • the control method of the device includes:
  • the third metal electrode When the third metal electrode is located above the ferroelectric material and the third metal electrode tip is parallel to the short strip of the alloy film, the third metal electrode is located at both ends of the first metal electrode and the second metal electrode, and passes through the third metal electrode
  • the application of a circulating voltage at both ends produces two cracks near the tip of the metal electrode. Under the action of the circulating voltage, the crack penetrates into the alloy film and opens and closes as the polarity of the voltage changes.
  • the amplitude of the circulating voltage is 150 V, cracks are generated at the tip of the electrode and spread through the alloy film toward both ends.
  • the crack 1 opens the crack 2
  • the amplitude of the circulating voltage is 80 V and the circulating voltage is positive
  • the crack 1 closes the crack 2 to open.
  • the length of the crack was 40 ⁇ m
  • the width of the crack was 60 nm.
  • a method for preparing a device based on a controllable nanocrack comprising:
  • An alloy thin film is grown on the upper surface of the ferroelectric material by magnetron sputtering, and after etching the alloy thin film, the alloy thin film is etched into a strip structure; a first metal electrode is deposited on both ends of the alloy thin film by photolithography a second metal electrode; a third metal electrode is deposited on both ends of the first metal electrode and the second metal electrode on the upper surface of the ferroelectric material to obtain a device based on the controllable nanocrack.
  • the ferroelectric material is PMN-PZT-PT, the alloy film is FePt, the first metal electrode and the second metal electrode are Pt, and the third metal electrode is Ag.
  • the ferroelectric material has a thickness of 0.2 mm, the alloy thin film has a thickness of 45 nm, and the first metal electrode, the second metal electrode, and the third metal electrode have a thickness of 250 nm.
  • the control method of the device includes:
  • the third metal electrode When the third metal electrode is located above the ferroelectric material and the third metal electrode tip is parallel to the short strip of the alloy film, the third metal electrode is located at both ends of the first metal electrode and the second metal electrode, and passes through the third metal electrode
  • the application of a circulating voltage at both ends produces two cracks near the tip of the metal electrode. Under the action of the circulating voltage, the crack penetrates into the alloy film and opens and closes as the polarity of the voltage changes.
  • the amplitude of the circulating voltage is 300 V
  • cracks are generated at the tip of the electrode and spread through the alloy film to both ends.
  • the cyclic voltage amplitude is 150 V and the circulating voltage is negative, the crack 1 is opened and the crack 2 is closed.
  • the amplitude of the circulating voltage is 150 V and the circulating voltage is positive, the crack 1 closes the crack 2 to open.
  • the crack has a length of 50 ⁇ m and the crack has a width of 48 nm.

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Abstract

一种基于可控纳米裂纹的器件及其制备方法和控制方法，其中，基于可控纳米裂纹的器件包括铁电材料（A）、合金薄膜（B）和金属电极，该金属电极包括第一金属电极（C 1）、第二金属电极（C 2）和第三金属电极（D），该合金薄膜位于铁电材料上方，该第一金属电极（C 1）和第二金属电极（C 2）位于合金薄膜的上方的两端，该第三金属电极（D）位于铁电材料的上方或者下方。该基于可控纳米裂纹的器件在断开状态下不存在漏电的风险，同时具有非易失性、可重复性、低功耗以及抗疲劳性，此外还具有巨大的开关比以及良好的稳定性，作为存储器具备长期保存数据的能力，此外还能够用于逻辑运算。

Description

一种基于可控纳米裂纹的器件及其制备方法和控制方法 【技术领域】
本发明属于微电子技术领域，更具体地，涉及一种基于可控纳米裂纹的器件及其制备方法和控制方法。
【背景技术】
随着微电子技术的发展，集成电路上晶体管的特征尺寸不断趋近于物理极限，如果进一步减小器件尺寸，就会存在严重的漏电问题。而基于电-机械耦合的功能器件由于具有机械的“开”和“关”特性，因此就有效避免了“关”状态下漏电的问题。同时，相对于传统的半导体器件，微机电器件还存在开关比大、功耗低、结构及工艺简单等优点，这在开发高密度、低功耗、高稳定性的存储器、晶体管以及逻辑器件方面，具有巨大的发展潜力和应用价值。
目前，公开报道的微机电功能器件大多都是基于机械应力或电场力驱动的，虽然有效避免了器件漏电的问题，但存在开关速度慢、功耗高等缺陷。
【发明内容】
针对现有技术的以上缺陷或改进需求，本发明提供了一种基于可控纳米裂纹的器件及其制备方法和控制方法，由此解决现有技术存在开关速度慢、功耗高、裂纹不可控的技术问题。
为实现上述目的，按照本发明的一个方面，提供了一种基于可控纳米裂纹的器件，包括铁电材料、合金薄膜和金属电极，所述金属电极包括第一金属电极、第二金属电极和第三金属电极，
所述合金薄膜位于铁电材料上方，所述第一金属电极和第二金属电极位于合金薄膜的上方的两端，所述第三金属电极位于铁电材料的上方或者下方。
进一步地，铁电材料为PMN-PT、BTO、PZT、PIN-PT或者PMN-PZT-PT，所述合金薄膜为MnPt或者FePt，所述金属电极为Au、Pt、Cu或者Ag。
进一步地，铁电材料的厚度为0.1mm-1mm，所述合金薄膜的厚度为10nm-50nm，所述金属电极的厚度为50nm-2μm。
进一步地，第三金属电极位于铁电材料的上方时，第三金属电极位于第一金属电极和第二金属电极的两端。
按照本发明的另一方面，提供了一种基于可控纳米裂纹的器件的制备方法，包括：
(1)在铁电材料上表面通过磁控溅射、分子束外延、脉冲激光沉积或原子层沉积生长合金薄膜，对合金薄膜进行光刻或电子束曝光后，将合金薄膜刻蚀成条状结构；
(2)通过光刻、溅射或电子束蒸发的方法在合金薄膜的两端沉积第一金属电极和第二金属电极；
(3)在铁电材料的下表面沉积第三金属电极，或者在铁电材料的上表面的第一金属电极和第二金属电极两端沉积第三金属电极，得到基于可控纳米裂纹的器件。
进一步地，铁电材料为PMN-PT、BTO、PZT、PIN-PT或者PMN-PZT-PT，所述合金薄膜为MnPt或者FePt，所述第一金属电极、第二金属电极和第三金属电极为Au、Pt、Cu或者Ag。
进一步地，铁电材料的厚度为0.1mm-1mm，所述合金薄膜的厚度为10nm-50nm，所述第一金属电极、第二金属电极和第三金属电极的厚度为50nm-2μm。
按照本发明的另一方面，提供了一种基于可控纳米裂纹的器件的控制方法，所述器件包括：铁电材料、合金薄膜和金属电极，所述金属电极包括第一金属电极、第二金属电极和第三金属电极，
所述合金薄膜位于铁电材料上方，所述第一金属电极和第二金属电极位于合金薄膜的上方的两端，所述第三金属电极位于铁电材料的上方或者下方；
所述器件的控制方法包括：
当第三金属电极位于铁电材料的下方时，通过在第三金属电极和第一金属 电极两端或者在第三金属电极和第二金属电极两端施加垂直方向的循环电压，在合金薄膜上产生裂纹，并进一步控制裂纹的开和闭；
进一步地，循环电压的幅值为120V-200V且循环电压为负向时，裂纹产生并打开，所述循环电压的幅值为60V-120V且循环电压为正向时，裂纹闭合。
进一步地，裂纹的长度为10μm-20μm，所述裂纹的宽为30nm-70nm。
当第三金属电极位于铁电材料的上方且第三金属电极尖端垂直于合金薄膜短条时，第三金属电极位于第一金属电极和第二金属电极的两端，通过在第三金属电极的两端施加面内方向的循环电压在合金薄膜上产生裂纹并进一步控制裂纹的开和闭。
进一步地，循环电压的幅值为30V-50V且循环电压为负向时，裂纹产生并打开，所述循环电压的幅值为20V-40V且循环电压为正向时，裂纹闭合。
进一步地，裂纹的长度为10μm-20μm，所述裂纹的宽为30nm-70nm。
当第三金属电极位于铁电材料的上方且第三金属电极尖端平行于合金薄膜短条时，第三金属电极位于第一金属电极和第二金属电极的两端，通过在第三金属电极的两端施加面内方向的循环电压在第三金属电极尖端各产生一条裂纹，在循环电压作用下裂纹扩展到合金薄膜使其断开，进一步控制裂纹的开和闭。
进一步地，循环电压的幅值为80V-200V时，在第三电极尖端各产生一条裂纹，并贯穿到合金薄膜中。
进一步地，循环电压的幅值为50V-120V且循环电压为正向时，第一裂纹闭合第二裂纹打开，所述循环电压的幅值为50V-120V且循环电压为负向时，第一裂纹打开第二裂纹闭合。
进一步地，裂纹的长度为20μm-50μm，所述裂纹的宽为30nm-70nm。
总体而言，通过本发明所构思的以上技术方案与现有技术相比，能够取得下列有益效果：
(1)本发明的基于可控纳米裂纹的器件在断开状态下不存在漏点的风险，同时具有非易失性、可重复性、低功耗以及抗疲劳性，此外还具有巨大的开关 比以及良好的稳定性，作为存储器具备长期保存数据的能力。因此，这种基于可控纳米裂纹的器件未来可用于信息存储、电控开关、逻辑运算以及NEMS等方向。
(2)基于可控纳米裂纹的微机电器件，是利用电场驱动铁电体中铁电畴的翻转来实现纳米裂纹的开和闭，具有较快的反应时间，开关速度快，功耗低，具有巨大的研究意义和应用潜力。
(3)本发明选用的铁电材料为PMN-PT、BTO、PZT、PIN-PT或者PMN-PZT-PT，功耗较低，选用的合金薄膜为MnPt或者FePt，具有适当的脆性，使铁电材料中产生的纳米裂纹能够贯穿该薄膜使其断开，选用的金属电极延展性良好、导电性良好。
【附图说明】
图1是本发明实施例提供的第三金属电极位于铁电材料的下方时的器件结构示意图；
图2(a)是本发明实施例提供的第三金属电极位于铁电材料的下方时的制备方法的第一张流程图；
图2(b)是本发明实施例提供的第三金属电极位于铁电材料的下方时的制备方法的第二张流程图；
图2(c)是本发明实施例提供的第三金属电极位于铁电材料的下方时的制备方法的第三张流程图；
图2(d)是本发明实施例提供的第三金属电极位于铁电材料的下方时的制备方法的第四张流程图；
图2(e)是本发明实施例提供的第三金属电极位于铁电材料的下方时的制备方法的第五张流程图；
图2(f)是本发明实施例提供的第三金属电极位于铁电材料的下方时的制备方法的第六张流程图；
图2(h)是本发明实施例提供的第三金属电极位于铁电材料的下方时的制备方法的第七张流程图；
图2(g)是本发明实施例提供的第三金属电极位于铁电材料的下方时的制备方法的第八张流程图；
图3是本发明实施例提供的第三金属电极位于铁电材料的下方时的器件测试示意图；
图4(a)是本发明实施例提供的第三金属电极位于铁电材料的下方时的器件形貌图；
图4(b)是本发明实施例提供的第三金属电极位于铁电材料的下方时的未极化状态下合金薄膜的形貌图；
图4(c)是本发明实施例提供的第三金属电极位于铁电材料的下方时的裂纹打开的形貌图；
图4(d)是本发明实施例提供的第三金属电极位于铁电材料的下方时的裂纹闭合的形貌图；
图4(e)是本发明实施例提供的图4(c)中虚线框的放大图；
图4(f)是本发明实施例提供的图4(d)中虚线框的放大图；
图5(a)是本发明实施例提供的第三金属电极位于铁电材料的下方时的循环电压随时间变化的曲线；
图5(b)是本发明实施例提供的第三金属电极位于铁电材料的下方时电流随循环电压变化的曲线；
图6是本发明实施例提供的第三金属电极位于铁电材料的下方时的器件的脉冲测试曲线；
图7是本发明实施例提供的第三金属电极位于铁电材料的上方且垂直于合金薄膜短条时的器件结构示意图；
图8(a)是本发明实施例提供的第三金属电极位于铁电材料的上方且垂直于合金薄膜短条时的制备方法的第一张流程图；
图8(b)是本发明实施例提供的第三金属电极位于铁电材料的上方且垂直于合金薄膜短条时的制备方法的第二张流程图；
图8(c)是本发明实施例提供的第三金属电极位于铁电材料的上方且垂直 于合金薄膜短条时的制备方法的第三张流程图；
图8(d)是本发明实施例提供的第三金属电极位于铁电材料的上方且垂直于合金薄膜短条时的制备方法的第四张流程图；
图8(e)是本发明实施例提供的第三金属电极位于铁电材料的上方且垂直于合金薄膜短条时的制备方法的第五张流程图；
图8(f)是本发明实施例提供的第三金属电极位于铁电材料的上方且垂直于合金薄膜短条时的制备方法的第六张流程图；
图9是本发明实施例提供的第三金属电极位于铁电材料的上方且垂直于合金薄膜短条时的器件测试示意图；
图10(a)是本发明实施例提供的第三金属电极位于铁电材料的上方且垂直于合金薄膜短条时的器件形貌图；
图10(b)是本发明实施例提供的第三金属电极位于铁电材料的上方且垂直于合金薄膜短条时的未极化状态下合金薄膜的形貌图；
图10(c)是本发明实施例提供的第三金属电极位于铁电材料的上方且垂直于合金薄膜短条时的裂纹打开的形貌图；
图10(d)是本发明实施例提供的第三金属电极位于铁电材料的上方且垂直于合金薄膜短条时的裂纹闭合的形貌图；
图11(a)是本发明实施例提供的第三金属电极位于铁电材料的上方且垂直于合金薄膜短条时的循环电压随时间变化的曲线；
图11(b)是本发明实施例提供的第三金属电极位于铁电材料的上方且垂直于合金薄膜短条时的电流随循环电压变化的曲线。
图12是本发明实施例提供的第三金属电极位于铁电材料的上方且平行于合金薄膜短条时的结构示意图；
图13(a)是本发明实施例提供的第三金属电极位于铁电材料的上方且平行于合金薄膜短条时的制备方法的第一张流程图；
图13(b)是本发明实施例提供的第三金属电极位于铁电材料的上方且平行于合金薄膜短条时的制备方法的第二张流程图；
图13(c)是本发明实施例提供的第三金属电极位于铁电材料的上方且平行于合金薄膜短条时的制备方法的第三张流程图；
图13(d)是本发明实施例提供的第三金属电极位于铁电材料的上方且平行于合金薄膜短条时的制备方法的第四张流程图；
图13(e)是本发明实施例提供的第三金属电极位于铁电材料的上方且平行于合金薄膜短条时的制备方法的第五张流程图；
图13(f)是本发明实施例提供的第三金属电极位于铁电材料的上方且平行于合金薄膜短条时的制备方法的第六张流程图；
图14是本发明实施例提供的第三金属电极位于铁电材料的上方且平行于合金薄膜短条时的器件测试示意图；
图15(a)是本发明实施例提供的第三金属电极位于铁电材料的上方且平行于合金薄膜短条时的器件形貌图；
图15(b)是本发明实施例提供的第三金属电极位于铁电材料的上方且平行于合金薄膜短条时的未极化状态下合金薄膜的形貌图；
图15(c)是本发明实施例提供的第三金属电极位于铁电材料的上方且平行于合金薄膜短条时的裂纹1打开裂纹2闭合的形貌图；
图15(d)是本发明实施例提供的第三金属电极位于铁电材料的上方且平行于合金薄膜短条时的裂纹1闭合裂纹2打开的形貌图；
图16(a)是本发明实施例提供的第三金属电极位于铁电材料的上方且平行于合金薄膜短条时的循环电压随时间变化的曲线；
图16(b)是本发明实施例提供的第三金属电极位于铁电材料的上方且平行于合金薄膜短条时的电流随循环电压变化的曲线。
【具体实施方式】
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。此外，下面所描述的本发明各个实 施方式中所涉及到的技术特征只要彼此之间未构成冲突就能够相互组合。
如图1所示，一种基于可控纳米裂纹的器件，包括铁电材料A、合金薄膜B和金属电极，所述金属电极包括第一金属电极C 1、第二金属电极C 2和第三金属电极D，所述合金薄膜位于铁电材料上方，所述第一金属电极和第二金属电极位于合金薄膜的上方的两端，所述第三金属电极位于铁电材料的下方。
如图2(a)、2(b)、2(c)、2(d)、2(e)、2(f)、2(h)和2(g)所示，一种基于可控纳米裂纹的器件的制备方法，包括：
(1)在铁电材料上表面通过磁控溅射、分子束外延、脉冲激光沉积或原子层沉积生长合金薄膜，对合金薄膜进行光刻或电子束曝光后，将合金薄膜刻蚀成条状结构；
(2)通过光刻、溅射或电子束蒸发的方法在合金薄膜的两端沉积第一金属电极和第二金属电极；
(3)在铁电材料的下表面沉积第三金属电极，得到基于可控纳米裂纹的器件。
如图3所示，在产生纳米裂纹的过程中，只需在底电极D和顶电极C 1(或C 2)之间加一个三角形的循环电压U＝U 1，在电压极性正负变换过程中，铁电材料中的铁电畴也会随之翻转，由于钉扎作用，会在铁电畴壁产生应力，从而产生裂纹。当产生纳米裂纹后，在第三金属电极(底电极)D和第一金属电极(顶电极)C 1(或C 2)之间加一个稍小的三角形的循环电压U＝U 2，当电压极性正负变换时，能够驱动纳米裂纹的开闭。同时在顶电极C 1和C 2之间加一个恒定的电压U，检测纳米裂纹的开闭情况。
图4(a)是本发明实施例提供的第三金属电极位于铁电材料的下方时的器件形貌图；图4(b)是本发明实施例提供的第三金属电极位于铁电材料的下方时的未极化状态下合金薄膜的形貌图；图4(c)是本发明实施例提供的第三金属电极位于铁电材料的下方时的裂纹打开的形貌图；图4(d)是本发明实施例提供的第三金属电极位于铁电材料的下方时的裂纹闭合的形貌图；图4(e)是 本发明实施例提供的图4(c)中虚线框的放大图；图4(f)是本发明实施例提供的图4(d)中虚线框的放大图；能看出，当第三金属电极位于铁电材料的下方时，通过在第三金属电极和第一金属电极或者第三金属电极和第二金属电极的两端施加循环电压，在合金薄膜上产生裂纹并控制裂纹的开和闭。循环电压的幅值为120V-200V且循环电压为负向时，裂纹产生并打开，所述循环电压的幅值为60V-120V且循环电压为正向时，裂纹闭合。裂纹的长度为10μm-20μm，所述裂纹的宽为50nm-55nm。
图5(a)是本发明实施例提供的第三金属电极位于铁电材料的下方时的循环电压随时间变化的曲线；图5(b)是本发明实施例提供的第三金属电极位于铁电材料的下方时电流随循环电压变化的曲线；我们在C 1(或C 2)和D之间施加一个三角形的循环电压U 2，用来调控纳米裂纹的开和闭状态。同时，我们在顶电极C 1和C 2之间加上一个U＝0.1V的恒定电压，同时测量两个电极之前的通道电流I，这样能够很直观的知道纳米裂纹的开闭情况。当裂纹打开时，电极C 1、C 2之间断路，此时电流I很小，当纳米裂纹合上时，电极C 1和C 2导通，此时电流很大，
如图6所示，在正负100V脉冲循环几十次之后，本发明实施例提供的第三金属电极位于铁电材料的下方时的器件的纳米裂纹仍然具有很好的开关特性，说明其抗疲劳性较好。
本发明通过在金属电极C 1和D之间施加一个三角形的循环电压，首先会在与电极接触的铁电材料(A)上产生纳米裂纹，随后纳米裂纹会贯穿中间的MnPt合金薄膜，使其断开。当中间产生1条纳米裂纹之后，由于应力释放不会再产生第二条裂纹。金属电极C 1和C 2附近也会产生裂纹，但是不会贯穿到电极上面，不影响器件工作。在金属电极C 1和D之间施加一个三角形的循环电压U 2，在金属电极C 1和C 2之间施加恒定电压U来检测通道电流I的大小。当电压为正向的时候，纳米裂纹会合上，此时通道电流I会很大；当电压为负向的时候，纳米裂纹会打开，此时通道电流I会很小。在金属电极C 1和D之间施加一个正负脉冲P，同样在金属电极C 1和C 2之间施加恒定电压U来检测通道电流I的大小。当 脉冲为正向时纳米裂纹会合上，此时通道电流I很大；当脉冲为负向时纳米裂纹会打开，此时通道电流I很小。根据检测漏电流I的高低变化，就能实现简单的逻辑功能。
如图7所示，是本发明实施例提供的第三金属电极位于铁电材料的上方且第三金属电极尖端垂直于合金薄膜短条时的器件结构示意图；一种基于可控纳米裂纹的器件，包括铁电材料A、合金薄膜B和金属电极，所述金属电极包括第一金属电极C 1、第二金属电极C 2和第三金属电极D 1和D 2，所述合金薄膜位于铁电材料上方，所述第一金属电极和第二金属电极位于合金薄膜的上方的两端，所述第三金属电极位于铁电材料的上方，D 1和D 2位于第一金属电极和第二金属电极两端且和合金薄膜短条垂直。
如图8(a)-图8(f)所示，一种基于可控纳米裂纹的器件的制备方法，包括：
(1)在铁电材料上表面通过磁控溅射、分子束外延、脉冲激光沉积或原子层沉积生长合金薄膜，对合金薄膜进行光刻或电子束曝光后，将合金薄膜刻蚀成条状结构；
(2)通过光刻、溅射或电子束蒸发的方法在合金薄膜的两端沉积第一金属电极和第二金属电极；
(3)在铁电材料的上表面的第一金属电极和第二金属电极两端沉积第三金属电极，得到基于可控纳米裂纹的器件。
如图9所示，在产生纳米裂纹的过程中，只需在第三金属电极D 1和D 2之间加一个三角形的循环电压U＝U 3，在电压极性正负变换过程中，也会在铁电材料内部产生纳米裂纹。由于金属电极尖端距离最近，因而在两电极尖端中间的电场强度最大，因而会最先产生裂纹，使中间的合金薄膜B断开。当产生一条裂纹后，由于应力释放的原因，也不会再产生其他裂纹了。当产生纳米裂纹后，在金属电极D 1和D 2之间施加一个电压幅值较U 3稍小的三角形的循环电压U＝U 4，当电压极性正负变换时，能驱动纳米裂纹的开闭。同时在金属电极C 1 和C 2之间加一个恒定的电压U，检测纳米裂纹的开闭情况。
图10(a)是本发明实施例提供的第三金属电极位于铁电材料的上方时的器件形貌图；图10(b)是本发明实施例提供的第三金属电极位于铁电材料的上方时的未极化状态下合金薄膜的形貌图；图10(c)是本发明实施例提供的第三金属电极位于铁电材料的上方时的裂纹打开的形貌图；图10(d)是本发明实施例提供的第三金属电极位于铁电材料的上方时的裂纹闭合的形貌图；能看出，当第三金属电极位于铁电材料的上方时，第三金属电极位于第一金属电极和第二金属电极的两端，通过在第三金属电极的两端施加循环电压在合金薄膜上产生裂纹并进一步控制裂纹的开和闭。循环电压的幅值为30V-50V且循环电压为负向时，裂纹产生并打开，所述循环电压的幅值为20V-40V且循环电压为正向时，裂纹闭合。裂纹的长度为10μm-20μm，所述裂纹的宽为30nm-70nm。
如图11(a)，在金属电极D 1和D 2之间施加一个三角形的循环电压U 4，用来调控纳米裂纹的开和闭状态。同时，我们在左右金属电极C 1和C 2之间加上一个U＝0.1V的恒定电压，同时测量两个电极之间的通道电流I，这样能很直观的知道纳米裂纹的开闭情况。当裂纹打开时，电极C 1、C 2之间断路，此时电流I很小，当纳米裂纹合上时，电极C 1和C 2导通，此时电流很大，如图11(b)所示。连续测试五次，发现纳米裂纹的开闭比较稳定。
本发明中，通过在金属电极D 1和D 2之间施加一个三角形的循环电压，由于金属电极D 1和D 2距离最近的地方电场强度最大，因而会在离电极尖端最近的铁电材料A内部最先产生纳米裂纹，随后纳米裂纹会贯穿上面的合金间合金薄膜B，使其断开。同样的，当合金薄膜B中间产生1条纳米裂纹之后，由于应力释放不会再产生第二条裂纹。为了保证器件的有效性，当金属电极C 1和C 2附近产生裂纹时，裂纹不会贯穿到上面的金属电极C 1和C 2，不影响器件工作。在金属电极D 1和D 2之间施加一个三角形的循环电压，在金属电极C 1和C 2之间施加恒定电压U来检测C 1和C 2之间通道电流I的大小。同样的，当D 1和D 2之间的电压U 4为正向的时候，纳米裂纹会合上，此时通道电流I会很大；当电压U 4为负 向的时候，纳米裂纹会打开，此时通道电流I会很小。根据检测通道电流I的高低变化，就能实现简单的逻辑功能。
如图12所示，是本发明实施例提供的第三金属电极位于铁电材料的上方且第三金属电极尖端平行于合金薄膜短条时的器件结构示意图；一种基于可控纳米裂纹的器件，包括铁电材料A、合金薄膜B和金属电极，所述金属电极包括第一金属电极(C 1、C 2、C 3)，第二金属电极(C 4、C 5、C 6)和第三金属电极D 1和D 2，所述合金薄膜位于铁电材料上方，所述第一金属电极和第二金属电极位于合金薄膜的左右的两端，所述第三金属电极位于铁电材料的上方，D 1和D 2位于第一金属电极和第二金属电极两端且和合金薄膜短条平行。
如图13(a)-图13(f)所示，一种基于可控纳米裂纹的器件的制备方法，包括：
(1)在铁电材料上表面通过磁控溅射、分子束外延、脉冲激光沉积或原子层沉积生长合金薄膜，对合金薄膜进行光刻或电子束曝光后，将合金薄膜刻蚀成条状结构；
(2)通过光刻、溅射或电子束蒸发的方法在合金薄膜的左右两端沉积第一金属电极和第二金属电极；
(3)在铁电材料的上表面的第一金属电极和第二金属电极上下两端沉积第三金属电极，得到基于可控纳米裂纹的器件。
如图14所示，在产生纳米裂纹的过程中，只需在第三金属电极D 1和D 2之间加一个三角形的循环电压U＝U 5，在电压极性正负变换过程中，会在第三电极D 1和D 2尖端附近各产生一条纳米裂纹，即第一裂纹和第二裂纹，分别简称为裂纹1和裂纹2。随后裂纹会向左右两边扩展，使合金薄膜B 1、B 2、B 3和B 4断开。当产生纳米裂纹后，在金属电极D 1和D 2之间施加一个电压幅值较U 5稍小的三角形的循环电压U＝U 6，当电压极性正负变换时，能够驱动裂纹1和裂纹2的开闭。同时在金属电极C 1和C 2(同样地，C 2和C 3、C 4和C 5、C 5和C 6)之间加一个恒定的电压U，检测纳米裂纹的开闭情况。
图15(a)是本发明实施例提供的第三金属电极位于铁电材料的上方且第三金属电极尖端平行于合金薄膜短条时的器件形貌图；图15(b)是本发明实施例提供的第三金属电极位于铁电材料的上方且第三金属电极尖端平行于合金薄膜短条时的未极化状态下合金薄膜的形貌图；图15(c)是本发明实施例提供的第三金属电极位于铁电材料的上方且第三金属电极尖端平行于合金薄膜短条时的裂纹1打开裂纹2闭合的形貌图；图15(d)是本发明实施例提供的第三金属电极位于铁电材料的上方且第三金属电极尖端平行于合金薄膜短条时的裂纹1闭合裂纹2打开的形貌图；能看出，当第三金属电极位于铁电材料的上方且第三金属电极尖端平行于合金薄膜短条时，第三金属电极位于第一金属电极和第二金属电极的两端，通过在第三金属电极的两端施加循环电压在第三金属电极尖端附近分别产生两条裂纹：裂纹1和裂纹2。随后裂纹会扩展到合金薄膜上，通过循环电场能够进一步控制裂纹的开和闭。循环电压幅值为80V-200V时，在第三电极尖端产生裂纹并进一步扩展到合金薄膜中。循环电压的幅值为50V-120V且循环电压为负向时，裂纹1打开裂纹2闭合，所述循环电压的幅值为50V-120V且循环电压为正向时，裂纹1闭合裂纹2打开。裂纹的长度为20μm-30μm，所述裂纹的宽为30nm-70nm。
如图16(a)，在金属电极D 1和D 2之间施加一个三角形的循环电压U 6，用来调控纳米裂纹1和2的开和闭状态。同时，我们在左侧金属电极C 1和C 2之间加上一个U＝0.1V的恒定电压，同时测量两个电极之间的通道电流I，这样能很直观的知道裂纹1的开闭情况。当裂纹1打开时，电极C 1、C 2之间断路，此时电流I很小，当裂纹1合上时，电极C 1和C 2导通，此时电流很大，如图16(b)所示。同样的，我们在金属电极C 4和C 5之间加上一个U＝0.1V的恒定电压，同时测量两个电极之间的通道电流I，这样判断裂纹1的开闭情况。同时，我们还可以在金属电极C 2和C 3之间或者C 5和C 6之间加上一个U＝0.1V的恒定电压，同时测量两个电极之间的通道电流I，这样也能判断裂纹2的开闭情况。当循环电压为负时，裂纹1打开裂纹2闭合，当循环电压为负时，裂纹1闭合裂纹2打开，这样也能用于简单的逻辑运算。
优选地，在本发明中，铁电材料A选用(001)晶向的Pb(Mg 1/3,Nb 2/3)O 3-30％PbTiO 3(PMN-PT)铁电陶瓷。此外，还可以选用BaTiO 3(BTO)、Pb(Zr 1-xTi x)O 3(PZT)、PIN-PT、PMN-PZT-PT等。
实施例1
一种基于可控纳米裂纹的器件的制备方法，包括：
在铁电材料上表面通过磁控溅射生长合金薄膜，对合金薄膜进行光刻后，将合金薄膜刻蚀成条状结构；通过光刻的方法在合金薄膜的两端沉积第一金属电极和第二金属电极；在铁电材料的下表面沉积第三金属电极，得到基于可控纳米裂纹的器件。铁电材料为PMN-PT，合金薄膜为MnPt，第一金属电极和第二金属电极为Pt，第三金属电极为Ag。所述铁电材料的厚度为0.5mm，所述合金薄膜的厚度为35nm，所述第一金属电极、第二金属电极和第三金属电极的厚度为100nm。
所述器件的控制方法包括：
当第三金属电极位于铁电材料的下方时，通过在第三金属电极和第一金属电极两端或者在第三金属电极和第二金属电极两端施加循环电压在合金薄膜上产生裂纹并控制裂纹的开和闭；循环电压的幅值为120V且循环电压为负向时，裂纹产生并打开，所述循环电压的幅值为100V且循环电压为正向时，裂纹闭合。所述裂纹的长度为10μm，所述裂纹的宽为52nm。
实施例2
一种基于可控纳米裂纹的器件的制备方法，包括：
在铁电材料上表面通过分子束外延生长合金薄膜，对合金薄膜进行电子束曝光后，将合金薄膜刻蚀成条状结构；通过溅射的方法在合金薄膜的两端沉积第一金属电极和第二金属电极；在铁电材料的下表面沉积第三金属电极，得到基于可控纳米裂纹的器件。所述铁电材料为BTO，所述合金薄膜为FePt，所述第一金属电极、第二金属电极和第三金属电极分别为Au、Au、Cu。所述铁电材料的厚度为0.7mm，所述合金薄膜的厚度为20nm，所述第一金属电极、第二金属电极和第三金属电极的厚度为80nm。
所述器件的控制方法包括：
当第三金属电极位于铁电材料的下方时，通过在第三金属电极和第一金属电极两端或者在第三金属电极和第二金属电极两端施加循环电压在合金薄膜中产生裂纹并控制裂纹的开和闭；循环电压的幅值为200V且循环电压为负向时，裂纹产生并打开，所述循环电压的幅值为120V且循环电压为正向时，裂纹闭合。所述裂纹的长度为20μm，所述裂纹的宽为50nm。
实施例3
一种基于可控纳米裂纹的器件的制备方法，包括：
在铁电材料上表面通过脉冲激光沉积生长合金薄膜，对合金薄膜进行光刻后，将合金薄膜刻蚀成条状结构；通过电子束蒸发的方法在合金薄膜的两端沉积第一金属电极和第二金属电极；在铁电材料的上表面的第一金属电极和第二金属电极两端沉积第三金属电极，得到基于可控纳米裂纹的器件。所述铁电材料为PZT，所述合金薄膜为MnPt，第一金属电极和第二金属电极为Pt，第三金属电极为Ag。所述铁电材料的厚度为0.1mm，所述合金薄膜的厚度为10nm，所述第一金属电极、第二金属电极和第三金属电极的厚度为50nm。
所述器件的控制方法包括：
当第三金属电极位于铁电材料的上方且第三电极尖端垂直于合金薄膜短条时，第三金属电极位于第一金属电极和第二金属电极的两端，通过在第三金属电极的两端施加循环电压在合金薄膜上产生裂纹并控制裂纹的开和闭。循环电压的幅值为150V且循环电压为负向时，裂纹产生并打开，所述循环电压的幅值为60V且循环电压为正向时，裂纹闭合。所述裂纹的长度为15μm，所述裂纹的宽为55nm。
实施例4
一种基于可控纳米裂纹的器件的制备方法，包括：
在铁电材料上表面通过原子层沉积生长合金薄膜，对合金薄膜进行电子束曝光后，将合金薄膜刻蚀成条状结构；通过光刻的方法在合金薄膜的两端沉积第一金属电极和第二金属电极；在铁电材料的上表面的第一金属电极和第二金 属电极两端沉积第三金属电极，得到基于可控纳米裂纹的器件。所述铁电材料为PIN-PT，所述合金薄膜为MnPt，第一金属电极和第二金属电极为Pt，第三金属电极为Ag。所述铁电材料的厚度为1mm，所述合金薄膜的厚度为50nm，所述第一金属电极、第二金属电极和第三金属电极的厚度为2μm。
所述器件的控制方法包括：
当第三金属电极位于铁电材料的上方且第三电极尖端垂直于合金薄膜短条时，第三金属电极位于第一金属电极和第二金属电极的两端，通过在第三金属电极的两端施加循环电压在合金薄膜上产生裂纹并控制裂纹的开和闭。循环电压的幅值为50V且循环电压为负向时，裂纹产生并打开，所述循环电压的幅值为40V且循环电压为正向时，裂纹闭合。所述裂纹的长度为14μm，所述裂纹的宽为53nm。
实施例5
一种基于可控纳米裂纹的器件的制备方法，包括：
在铁电材料上表面通过磁控溅射生长合金薄膜，对合金薄膜进行光刻后，将合金薄膜刻蚀成条状结构；通过光刻的方法在合金薄膜的两端沉积第一金属电极和第二金属电极；在铁电材料的上表面的第一金属电极和第二金属电极两端沉积第三金属电极，得到基于可控纳米裂纹的器件。所述铁电材料为PMN-PZT-PT，所述合金薄膜为MnPt，第一金属电极和第二金属电极为Pt，第三金属电极为Ag。所述铁电材料的厚度为0.5mm，所述合金薄膜的厚度为30nm，所述第一金属电极、第二金属电极和第三金属电极的厚度为1μm。
所述器件的控制方法包括：
当第三金属电极位于铁电材料的上方且第三电极尖端垂直于合金薄膜短条时，第三金属电极位于第一金属电极和第二金属电极的两端，通过在第三金属电极的两端施加循环电压在合金薄膜上产生裂纹并控制裂纹的开和闭。循环电压的幅值为30V且循环电压为负向时，裂纹产生并打开，所述循环电压的幅值为20V且循环电压为正向时，裂纹闭合。所述裂纹的长度为13μm，所述裂纹的宽为54nm。
实施例6
一种基于可控纳米裂纹的器件的制备方法，包括：
在铁电材料上表面通过磁控溅射生长合金薄膜，对合金薄膜进行光刻后，将合金薄膜刻蚀成条状结构；通过光刻的方法在合金薄膜的两端沉积第一金属电极和第二金属电极；在铁电材料的上表面的第一金属电极和第二金属电极两端沉积第三金属电极，得到基于可控纳米裂纹的器件。所述铁电材料为PMN-PZT-PT，所述合金薄膜为MnPt，第一金属电极和第二金属电极为Pt，第三金属电极为Ag。所述铁电材料的厚度为0.5mm，所述合金薄膜的厚度为30nm，所述第一金属电极、第二金属电极和第三金属电极的厚度为200nm。
所述器件的控制方法包括：
当第三金属电极位于铁电材料的上方且第三电极尖端垂直于合金薄膜短条时，第三金属电极位于第一金属电极和第二金属电极的两端，通过在第三金属电极的两端施加循环电压在合金薄膜上产生裂纹并控制裂纹的开和闭。循环电压的幅值为40V且循环电压为负向时，裂纹产生并打开，所述循环电压的幅值为30V且循环电压为正向时，裂纹闭合。所述裂纹的长度为13μm，所述裂纹的宽为54nm。
实施例7
一种基于可控纳米裂纹的器件的制备方法，包括：
在铁电材料上表面通过磁控溅射生长合金薄膜，对合金薄膜进行光刻后，将合金薄膜刻蚀成条状结构；通过光刻的方法在合金薄膜的两端沉积第一金属电极和第二金属电极；在铁电材料的上表面的第一金属电极和第二金属电极两端沉积第三金属电极，得到基于可控纳米裂纹的器件。所述铁电材料为PMN-PT，所述合金薄膜为MnPt，第一金属电极和第二金属电极为Pt，第三金属电极为Ag。所述铁电材料的厚度为0.5mm，所述合金薄膜的厚度为40nm，所述第一金属电极、第二金属电极和第三金属电极的厚度为100nm。
所述器件的控制方法包括：
当第三金属电极位于铁电材料的上方且第三金属电极尖端平行于合金薄膜 短条时，第三金属电极位于第一金属电极和第二金属电极的两端，通过在第三金属电极的两端施加循环电压在金属电极尖端附近产生两条裂纹，在循环电压作用下裂纹会贯穿到合金薄膜上，并随着电压极性变化出现开和闭的状态。循环电压的幅值为150V时在电极尖端产生裂纹并向两端扩展贯穿合金薄膜。当循环电压幅值为100V且循环电压为负向时，裂纹1打开裂纹2闭合，所述循环电压的幅值为100V且循环电压为正向时，裂纹1闭合裂纹2打开。所述裂纹的长度为30μm，所述裂纹的宽为54nm。
实施例8
一种基于可控纳米裂纹的器件的制备方法，包括：
在铁电材料上表面通过磁控溅射生长合金薄膜，对合金薄膜进行光刻后，将合金薄膜刻蚀成条状结构；通过光刻的方法在合金薄膜的两端沉积第一金属电极和第二金属电极；在铁电材料的上表面的第一金属电极和第二金属电极两端沉积第三金属电极，得到基于可控纳米裂纹的器件。所述铁电材料为PMN-PZT-PT，所述合金薄膜为MnPt，第一金属电极和第二金属电极为Pt，第三金属电极为Ag。所述铁电材料的厚度为0.3mm，所述合金薄膜的厚度为50nm，所述第一金属电极、第二金属电极和第三金属电极的厚度为500nm。
所述器件的控制方法包括：
当第三金属电极位于铁电材料的上方且第三金属电极尖端平行于合金薄膜短条时，第三金属电极位于第一金属电极和第二金属电极的两端，通过在第三金属电极的两端施加循环电压在金属电极尖端附近产生两条裂纹，在循环电压作用下裂纹会贯穿到合金薄膜上，并随着电压极性变化出现开和闭的状态。循环电压的幅值为200V时在电极尖端产生裂纹并向两端扩展贯穿合金薄膜。当循环电压幅值为120V且循环电压为负向时，裂纹1打开裂纹2闭合，所述循环电压的幅值为120V且循环电压为正向时，裂纹1闭合裂纹2打开。所述裂纹的长度为35μm，所述裂纹的宽为50nm。
实施例4
一种基于可控纳米裂纹的器件的制备方法，包括：
在铁电材料上表面通过原子层沉积生长合金薄膜，对合金薄膜进行电子束曝光后，将合金薄膜刻蚀成条状结构；通过光刻的方法在合金薄膜的两端沉积第一金属电极和第二金属电极；在铁电材料的上表面的第一金属电极和第二金属电极两端沉积第三金属电极，得到基于可控纳米裂纹的器件。所述铁电材料为PMN-PT，所述合金薄膜为CoPt，第一金属电极和第二金属电极为Pt，第三金属电极为Ag。所述铁电材料的厚度为1mm，所述合金薄膜的厚度为50nm，所述第一金属电极、第二金属电极和第三金属电极的厚度为300nm。
所述器件的控制方法包括：
当第三金属电极位于铁电材料的上方且第三金属电极尖端平行于合金薄膜短条时，第三金属电极位于第一金属电极和第二金属电极的两端，通过在第三金属电极的两端施加循环电压在金属电极尖端附近产生两条裂纹，在循环电压作用下裂纹会贯穿到合金薄膜上，并随着电压极性变化出现开和闭的状态。循环电压的幅值为150V时在电极尖端产生裂纹并向两端扩展贯穿合金薄膜。当循环电压幅值为80V且循环电压为负向时，裂纹1打开裂纹2闭合，所述循环电压的幅值为80V且循环电压为正向时，裂纹1闭合裂纹2打开。所述裂纹的长度为40μm，所述裂纹的宽为60nm。
实施例9
一种基于可控纳米裂纹的器件的制备方法，包括：
在铁电材料上表面通过磁控溅射生长合金薄膜，对合金薄膜进行光刻后，将合金薄膜刻蚀成条状结构；通过光刻的方法在合金薄膜的两端沉积第一金属电极和第二金属电极；在铁电材料的上表面的第一金属电极和第二金属电极两端沉积第三金属电极，得到基于可控纳米裂纹的器件。所述铁电材料为PMN-PZT-PT，所述合金薄膜为FePt，第一金属电极和第二金属电极为Pt，第三金属电极为Ag。所述铁电材料的厚度为0.2mm，所述合金薄膜的厚度为45nm，所述第一金属电极、第二金属电极和第三金属电极的厚度为250nm。
所述器件的控制方法包括：
当第三金属电极位于铁电材料的上方且第三金属电极尖端平行于合金薄膜 短条时，第三金属电极位于第一金属电极和第二金属电极的两端，通过在第三金属电极的两端施加循环电压在金属电极尖端附近产生两条裂纹，在循环电压作用下裂纹会贯穿到合金薄膜上，并随着电压极性变化出现开和闭的状态。循环电压的幅值为300V时在电极尖端产生裂纹并向两端扩展贯穿合金薄膜。当循环电压幅值为150V且循环电压为负向时，裂纹1打开裂纹2闭合，所述循环电压的幅值为150V且循环电压为正向时，裂纹1闭合裂纹2打开。所述裂纹的长度为50μm，所述裂纹的宽为48nm。
本领域的技术人员容易理解，以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (12)

  1. 一种基于可控纳米裂纹的器件，其特征在于，包括铁电材料、合金薄膜和金属电极，所述金属电极包括第一金属电极、第二金属电极和第三金属电极，
    所述合金薄膜位于铁电材料上方，所述第一金属电极和第二金属电极位于合金薄膜的上方的两端，所述第三金属电极位于铁电材料的上方或者下方。
  2. 如权利要求1所述的一种基于可控纳米裂纹的器件，其特征在于，所述铁电材料为PMN-PT、BTO、PZT、PIN-PT或者PMN-PZT-PT，所述合金薄膜为MnPt或者FePt，所述金属电极为Au、Pt、Cu或者Ag。
  3. 如权利要求1或2所述的一种基于可控纳米裂纹的器件，其特征在于，所述铁电材料的厚度为0.1mm-1mm，所述合金薄膜的厚度为10nm-50nm，所述金属电极的厚度为50nm-2μm。
  4. 如权利要求1或2所述的一种基于可控纳米裂纹的器件，其特征在于，所述第三金属电极位于铁电材料的上方时，第三金属电极位于第一金属电极和第二金属电极的两端。
  5. 如权利要求1-4任一所述的一种基于可控纳米裂纹的器件的制备方法，其特征在于，包括：
    (1)在铁电材料上表面通过磁控溅射、分子束外延、脉冲激光沉积或原子层沉积生长合金薄膜，对合金薄膜进行光刻或电子束曝光后，将合金薄膜刻蚀成条状结构；
    (2)通过光刻、溅射或电子束蒸发的方法在合金薄膜的两端沉积第一金属电极和第二金属电极；
    (3)在铁电材料的下表面沉积第三金属电极，或者在铁电材料的上表面的第一金属电极和第二金属电极两端沉积第三金属电极，得到基于可控 纳米裂纹的器件。
  6. 如权利要求5所述的一种基于可控纳米裂纹的器件的制备方法，其特征在于，所述铁电材料为PMN-PT、BTO、PZT、PIN-PT或者PMN-PZT-PT，所述合金薄膜为MnPt或者FePt，所述第一金属电极、第二金属电极和第三金属电极为Au、Pt、Cu或者Ag。
  7. 如权利要求5或6所述的一种基于可控纳米裂纹的器件的制备方法，其特征在于，所述铁电材料的厚度为0.1mm-1mm，所述合金薄膜的厚度为10nm-50nm，所述第一金属电极、第二金属电极和第三金属电极的厚度为50nm-2μm。
  8. 如权利要求1-4任一所述的一种基于可控纳米裂纹的器件的控制方法，其特征在于，所述器件包括：铁电材料、合金薄膜和金属电极，所述金属电极包括第一金属电极、第二金属电极和第三金属电极，
    所述合金薄膜位于铁电材料上方，所述第一金属电极和第二金属电极位于合金薄膜的上方的两端，所述第三金属电极位于铁电材料的上方或者下方；
    所述器件的控制方法包括：
    当第三金属电极位于铁电材料的下方时，通过在第三金属电极和第一金属电极两端或者在第三金属电极和第二金属电极两端施加循环电压，在合金薄膜上产生裂纹，进一步控制裂纹的开和闭；
    当第三金属电极位于铁电材料的上方时，第三金属电极位于第一金属电极和第二金属电极的两端，当第三金属电极尖端垂直于合金薄膜短条时，通过在第三金属电极的两端施加循环电压，在合金薄膜上产生裂纹，并进一步控制裂纹的开和闭。
  9. 如权利要求8所述的一种基于可控纳米裂纹的器件的控制方法，其特征在于，当第三金属电极位于铁电材料的下方时，所述循环电压的幅值为120V-200V且循环电压为负向时，裂纹产生并打开，所述循环电压的幅 值为60V-120V且循环电压为正向时，裂纹闭合；
    当第三金属电极位于铁电材料的上方，且第三金属电极尖端垂直于合金薄膜短条时，所述循环电压的幅值为30V-50V且循环电压为负向时，裂纹产生并打开，所述循环电压的幅值为20V-40V且循环电压为正向时，裂纹闭合。
  10. 如权利要求8所述的一种基于可控纳米裂纹的器件的控制方法，其特征在于，当第三金属电极位于铁电材料的上方且第三金属电极尖端平行于合金薄膜短条时，通过在第三金属电极的两端施加循环电压，在第三金属电极尖端附近会产生裂纹，随后裂纹在循环电压下会进一步扩展，使合金薄膜断开，通过施加循环电压能够进一步控制裂纹的开和闭。
  11. 如权利要求10所述的一种基于可控纳米裂纹的器件的控制方法，其特征在于，当第三金属电极位于铁电材料的上方且第三金属电极尖端平行于合金薄膜短条时，所属循环电压的幅值为80V-200V，在第三电极尖端各产生一条裂纹，随后扩展使合金薄膜断开，所述循环电压的幅值为50V-120V且循环电压为正向时，第一裂纹闭合第二裂纹打开，所述循环电压的幅值为50V-120V且循环电压为负向时，第一裂纹打开第二裂纹闭合。
  12. 如权利要求8至11中任一项所述的一种基于可控纳米裂纹的器件的控制方法，其特征在于，所述裂纹的长度为5μm-30μm，所述裂纹打开的宽度为20nm-70nm。
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