CN111312890B - 一种采用压电剪切模式实现磁畴翻转的方法 - Google Patents
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Abstract
一种采用压电剪切模式实现磁畴翻转的方法,包括以下步骤:步骤1,制备磁电异质结;步骤2,电场诱导产生的剪切应变和直流偏置磁场共同作用于磁电异质结;本发明所需的磁电异质结由常见的商用菱方相压电单晶基片和工业上常用的磁性单层薄膜构成,结构简单。既无需微加工工艺引入较强的形状各向异性,也无需在制备过程中施加偏置磁场或后续磁退火引入交换偏置,便可以利用剪切应变调制的磁电效应实现电场调控局域磁畴大于90°的磁化翻转,工艺简单、能耗低,对发展低功耗磁存储和逻辑器件具有重要意义。
Description
技术领域
本发明属于磁畴调控技术领域,特别涉及一种采用压电剪切模式实现磁畴翻转的方法。
背景技术
薄膜的磁畴动力学对于磁存储和逻辑器件的潜在应用具有重要意义。利用电场调控磁畴是实现低功耗、高密度存储的可行办法之一。其中,由于材料选择的灵活性,应变调制的磁电耦合效应在电场调控的众多途径中受到了广泛关注。然而,由于在磁电异质结中施加电场获得的应变具有单轴性,除非磁性膜具有较强的形状各向异性或单向交换耦合,否则利用应变是难以实现大于90°的磁化翻转。而大于90°的磁化翻转对于信息的非易失性存储十分重要。
发明内容
本发明的目的在于提供一种采用压电剪切模式实现磁畴翻转的方法,以解决上述问题。
为实现上述目的,本发明采用以下技术方案:
一种采用压电剪切模式实现磁畴翻转的方法,包括以下步骤:
步骤1,制备磁电异质结;
步骤2,电场诱导产生的剪切应变和直流偏置磁场共同作用于磁电异质结;
步骤3,对比剪切应变作用前的磁畴和剪切应变作用后的磁畴,利用剪切应变实现电场诱导局域磁畴翻转。
进一步的,步骤1中,制备磁电异质结,具体包括:
1)将压电单晶基片依次经过丙酮、酒精、去离子水清洗干净,并用氮气吹干表面;
2)将1)中已经清洗好的基片固定于托盘上并放置于磁控溅射的腔室中,按照正确的实验过程调整好参数,依次经过抽真空、充氩气、氩离子轰击靶材的工艺流程进行正确的磁性膜的制备实验;
3)重复2),在压电单晶基片另一侧制备金属电极,得到磁电异质结。
进一步的,步骤2中,具体包括:
1)以磁性膜为上电极、金属电极为下电极,沿压电单晶基片厚度方向施加大于压电单晶基片矫顽场的电场,对压电单晶基片进行初始极化,根据施加电场方向不同,将初始极化分为正极化和负极化;
2)沿压电单晶基片面内方向,施加直流偏置磁场于磁电异质结,并保持至实验结束;
3)根据初始极化的不同,施加极性与初始极化电场相反的电场于压电单晶基片,当电场大小接近压电单晶基片矫顽场时,基片产生剪切应变,并通过界面作用于磁性层;磁性层通过逆磁致伸缩效应,对剪切应变进行响应。
进一步的,所采用的压电单晶基片为011取向的菱方相PMN-PN或PZN-PT中的一种;磁性层为Matglas、CoFe、CoFeB、FeGaB或FeCoSiB中的一种,金属电极为Au、 Ag、Cu、Pt、Ti、Mo或Al中的一种。
进一步的,施加极性与初始极化电场相反的电场于压电单晶基片具体为:若初始极化为正,则施加负电场,若初始极化为负,则施加正电场。
进一步的,施加的直流偏置磁场大小为5-100Oe。
与现有技术相比,本发明有以下技术效果:
本发明所需的磁电异质结由常见的商用压电单晶基片和工业上常用的磁性膜构成,结构简单。既无需微加工工艺引入较强的形状各向异性,也无需在制备过程中施加偏置磁场或后续磁退火引入交换偏置,便可以利用剪切应变调制的磁电效应实现电场调控局域磁畴大于90°的磁化翻转,工艺简单、能耗低,对发展低功耗磁存储和逻辑器件具有重要意义。
附图说明
图1是本发明所制备的磁电异质结示意图。
图2是本发明所使用的菱方相铁电单晶结构示意图。
图3是本发明的不同电场下的磁畴。
具体实施方式
以下结合附图对本发明进一步说明:
请参阅图1至图3,一种采用压电剪切模式实现磁畴翻转的方法,包括以下步骤:
步骤1,制备磁电异质结;
步骤2,电场诱导产生的剪切应变和直流偏置磁场共同作用于磁电异质结;
步骤3,对比剪切应变作用前的磁畴和剪切应变作用后的磁畴,利用剪切应变实现电场诱导局域磁畴翻转。
步骤1中,制备磁电异质结,具体包括:
1)将压电单晶基片依次经过丙酮、酒精、去离子水清洗干净,并用氮气吹干表面;
2)将1)中已经清洗好的基片固定于托盘上并放置于磁控溅射的腔室中,按照正确的实验过程调整好参数,依次经过抽真空、充氩气、氩离子轰击靶材的工艺流程进行正确的磁性膜的制备实验;
3)重复2),在压电单晶基片另一侧制备金属电极,得到磁电异质结。
步骤2中,具体包括:
1)以磁性膜为上电极、金属电极为下电极,沿压电单晶基片厚度方向施加大于压电单晶基片矫顽场的电场,对压电单晶基片进行初始极化,根据施加电场方向不同,将初始极化分为正极化和负极化;
2)沿压电单晶基片面内方向,施加直流偏置磁场于磁电异质结,并保持至实验结束;
3)根据初始极化的不同,施加极性与初始极化电场相反的电场于压电单晶基片,当电场大小接近压电单晶基片矫顽场时,基片产生剪切应变,并通过界面作用于磁性层;磁性层通过逆磁致伸缩效应,对剪切应变进行响应。
施加极性与初始极化电场相反的电场于压电单晶基片具体为:若初始极化为正,则施加负电场,若初始极化为负,则施加正电场。
实施例1:
请参阅图1、图2所示,本发明的目的在于提供一种采用压电剪切模式实现磁畴翻转的方法,包括磁电异质结的制备和电场诱导产生的剪切应变和直流偏置磁场共同作用于磁电异质结的工艺。
(1)磁电异质结的制备工艺,其具体的实施工艺为:
A.将商用压电单晶基片PMN-PT(011)依次经过丙酮、酒精、去离子水清洗干净,并用氮气吹干表面。
B.将已经清洗好的基片固定于托盘上并放置于磁控溅射的腔室中,按照正确的实验过程调整好参数,依次经过抽真空、充氩气、氩离子轰击靶材的工艺流程进行正确的FeCoSiB磁性膜的制备。
C.重复步骤B,在PMN-PT(011)基片的另一侧制备20nm的铜金属电极。
上述制备所得FeCoSiB/PMN-PT(011)磁电异质结需要在磁光克尔(MOKE)显微成像系统下观测磁畴随电场的变化。
(2)电场诱导产生的剪切应变和直流偏置磁场共同作用于磁电异质结的工艺,其具体的实施工艺为:
A.将通过步骤(1)制备所得的磁电异质结放置于MOKE样品台上,通过手动聚焦,在电脑屏幕上得到清晰的样品表面形貌图。
B.以FeCoSiB磁性膜为上电极、铜电极为下电极,利用静电计沿压电单晶基片PMN-PT(011)厚度方向施加+10kV/cm电场并保持10min,对压电单晶基片进行初始极化。
C.沿PMN-PT(011)基片的[100]方向,施加大小为-300Oe的直流偏置磁场于磁电异质结,使磁性膜沿[100]方向饱和。
D.按照正确的MOKE测试步骤,在-300Oe磁场下减去背景图片,得到-300Oe对应的磁畴图。
E.保持背景图片不变,将磁场逐渐增加至-45Oe并保持至实验结束。
F.沿厚度方向施加+5kV/cm电场,并逐渐降至0kV/cm。
G.改变施加电场极性,从0kV/cm开始,以-0.2kV/cm为步长,逐渐减小电场至-4kV/cm。当施加电场接近于压电单晶基片矫顽场-1.5kV/cm时,基片产生剪切应变,并通过界面作用于磁性FeCoSiB层。
通过上述方法所得的不同电场下局域磁畴如图3所示,对比剪切应变作用前-1kV/cm 下的磁畴和剪切应变作用后-1.8kV/cm的磁畴,可得利用剪切应变实现电场诱导局域磁畴翻转大于90°。
实施例2:
本发明提供的一种采用压电剪切模式实现磁畴翻转的方法,也可以通过以下磁电异质结的制备和电场诱导产生的剪切应变实现。
(1)磁电异质结的制备工艺,其具体的实施工艺为:
A.将商用压电单晶基片PZN-PT(011)依次经过丙酮、酒精、去离子水清洗干净,并用氮气吹干表面。
B.将已经清洗好的基片固定于托盘上并放置于磁控溅射的腔室中,按照正确的实验过程调整好参数,依次经过抽真空、充氩气、氩离子轰击靶材的工艺流程进行正确的CoFeB 磁性膜的制备。
C.重复步骤B,在PZN-PT(011)基片的另一侧制备20nm的铜金属电极。
上述制备所得CoFeB/PZN-PT(011)磁电异质结需要在磁光克尔(MOKE)显微成像系统下观测磁畴随电场的变化。
(2)电场诱导产生的剪切应变和直流偏置磁场共同作用于磁电异质结的工艺,其具体的实施工艺为:
A.将通过步骤(1)制备所得的磁电异质结放置于MOKE样品台上,通过手动聚焦,在电脑屏幕上得到清晰的样品表面形貌图。
B.以CoFeB磁性膜为上电极、铜电极为下电极,利用静电计沿压电单晶基片 PZN-PT(011)厚度方向施加+10kV/cm电场并保持10min,对压电单晶基片进行初始极化。
C.沿PZN-PT(011)基片的[100]方向,施加大小为-300Oe的直流偏置磁场于磁电异质结,使磁性膜沿[100]方向饱和。
D.按照正确的MOKE测试步骤,在-300Oe磁场下减去背景图片,得到-300Oe对应的磁畴图。
E.保持背景图片不变,将磁场逐渐增加至-45Oe并保持至实验结束。
F.沿厚度方向施加+5kV/cm电场,并逐渐降至0kV/cm。
G.改变施加电场极性,从0kV/cm开始,以-0.2kV/cm为步长,逐渐减小电场至-4kV/cm。当施加电场接近于压电单晶基片矫顽场-1.5kV/cm时,基片产生剪切应变,并通过界面作用于磁性CoFeB层。
通过上述方法,对比剪切应变作用前-1kV/cm下的磁畴和剪切应变作用后-1.8kV/cm 的磁畴,可得利用剪切应变实现电场诱导局域磁畴翻转大于90°。
Claims (5)
1.一种采用压电剪切模式实现磁畴翻转的方法,其特征在于,包括以下步骤:
步骤1,制备磁电异质结;
步骤2,电场诱导产生的剪切应变和直流偏置磁场共同作用于磁电异质结;
步骤3,对比剪切应变作用前的磁畴和剪切应变作用后的磁畴,利用剪切应变实现电场诱导局域磁畴翻转;
步骤2中,具体包括:
1)以磁性膜为上电极、金属电极为下电极,沿压电单晶基片厚度方向施加大于压电单晶基片矫顽场的电场,对压电单晶基片进行初始极化,根据施加电场方向不同,将初始极化分为正极化和负极化;
2)沿压电单晶基片面内方向,施加直流偏置磁场于磁电异质结,并保持至实验结束;
3)根据初始极化的不同,施加极性与初始极化电场相反的电场于压电单晶基片,当电场大小接近压电单晶基片矫顽场时,基片产生剪切应变,并通过界面作用于磁性层;磁性层通过逆磁致伸缩效应,对剪切应变进行响应。
2.根据权利要求1所述的一种采用压电剪切模式实现磁畴翻转的方法,其特征在于,步骤1中,制备磁电异质结,具体包括:
1)将压电单晶基片依次经过丙酮、酒精、去离子水清洗干净,并用氮气吹干表面;
2)将1)中已经清洗好的基片固定于托盘上并放置于磁控溅射的腔室中,按照正确的实验过程调整好参数,依次经过抽真空、充氩气、氩离子轰击靶材的工艺流程进行正确的磁性膜制备实验;
3)重复2),在压电单晶基片另一侧制备金属电极,得到磁电异质结。
3.根据权利要求1所述的一种采用压电剪切模式实现磁畴翻转的方法,其特征在于,所采用的压电单晶基片为011取向的菱方相PMN-PT或PZN-PT中的一种;磁性层为Matglas、CoFe、CoFeB、FeGaB或FeCoSiB中的一种,金属电极为Au、Ag、Cu、Pt、Ti、Mo或Al中的一种。
4.根据权利要求1所述的一种采用压电剪切模式实现磁畴翻转的方法,其特征在于,施加极性与初始极化电场相反的电场于压电单晶基片具体为:若初始极化为正,则施加负电场,若初始极化为负,则施加正电场。
5.根据权利要求1所述的一种采用压电剪切模式实现磁畴翻转的方法,其特征在于,施加的直流偏置磁场大小为5-100Oe。
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