WO2019149197A1 - 一种三轴预调制低噪声磁电阻传感器 - Google Patents

一种三轴预调制低噪声磁电阻传感器 Download PDF

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Publication number
WO2019149197A1
WO2019149197A1 PCT/CN2019/073734 CN2019073734W WO2019149197A1 WO 2019149197 A1 WO2019149197 A1 WO 2019149197A1 CN 2019073734 W CN2019073734 W CN 2019073734W WO 2019149197 A1 WO2019149197 A1 WO 2019149197A1
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axis
soft magnetic
magnetic flux
sensing unit
magnetoresistive
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PCT/CN2019/073734
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English (en)
French (fr)
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迪克·詹姆斯·G
周志敏
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江苏多维科技有限公司
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Priority to JP2020541794A priority Critical patent/JP7249673B2/ja
Priority to EP19747103.0A priority patent/EP3748305A4/en
Priority to US15/733,446 priority patent/US11255927B2/en
Publication of WO2019149197A1 publication Critical patent/WO2019149197A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/0206—Three-component magnetometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/16—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0011—Arrangements or instruments for measuring magnetic variables comprising means, e.g. flux concentrators, flux guides, for guiding or concentrating the magnetic flux, e.g. to the magnetic sensor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0023—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration
    • G01R33/0041—Electronic aspects, e.g. circuits for stimulation, evaluation, control; Treating the measured signals; calibration using feed-back or modulation techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/0094—Sensor arrays
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices

Definitions

  • the present invention relates to the field of magnetic sensors, and in particular to a three-axis pre-modulation low-noise magnetoresistive sensor.
  • the magnetoresistive sensor When the magnetoresistive sensor is in normal use, there is 1/f noise, which reduces the noise of the magnetoresistive sensor, and the development of a low-noise magnetoresistive sensor is of great significance for improving the accurate measurement of the magnetic signal.
  • the magnetoresistive sensor has high 1/f noise at low frequencies, while at high frequencies, it is dominated by thermal noise, and its noise energy density is much lower than the noise energy density at low frequencies. Therefore, the magnetic is selected.
  • the signal is pre-modulated into a high-frequency magnetic field, and then measured by the magnetoresistive sensor, and the high-frequency frequency voltage signal is output, and then demodulated, so that the magnetic signal measurement can be moved from the low-frequency region to the high-frequency region, thereby reducing 1/f. Noise energy density.
  • the vibration structure of the soft magnetic flux concentrator is processed on the surface of the magnetoresistive sensor, and the soft magnetic flux concentrator is periodically vibrated on the surface of the magnetoresistive sensor to realize modulation of the static external magnetic field, which helps Reducing the 1/f noise of the magnetoresistive sensor, however, the vibration structure and the addition of the driver greatly increase the complexity and size of the magnetoresistive sensor, and the process complexity is greatly increased.
  • the three-axis magnetoresistive sensor can be used as an electronic compass to realize three-dimensional measurement of the spatial magnetic field.
  • the measurement of the three-axis magnetoresistive sensor is to measure the three-dimensional magnetic field under a static magnetic field, so there is 1/f noise, which affects The measurement accuracy of the external magnetic field, therefore, the present invention aims to propose a three-axis pre-modulated magnetoresistive sensor capable of realizing the high-frequency output of the measurement signal, thereby obtaining a low-noise measurement signal.
  • the present invention proposes a three-axis pre-modulated low-noise magnetoresistive sensor capable of realizing a high-frequency output of a measurement signal, thereby obtaining a low-noise measurement signal.
  • the three-axis magnetoresistive sensor comprises an X-axis magnetoresistive sensor, a Y-axis magnetoresistive sensor and a Z-axis magnetoresistive sensor
  • the X-axis magnetoresistive sensor associated with the soft magnetic flux concentrator comprises: 1.
  • a single-chip reference bridge magnetoresistive sensor The magnetic resistance sensing unit string at the gap of the soft magnetic flux concentrator and the reference magnetic resistance sensing unit string located on the upper surface or the lower surface of the soft magnetic flux concentrator; 2.
  • the single-chip high-sensitivity push-pull magnetic resistance sensor The scanning laser thermal annealing method is used to obtain the +X push magnetoresistive sensing unit array and the -X pull magnetoresistive sensing unit array, and the soft magnetic flux concentrator array is used to realize the enhancement of the external magnetic field; 3.
  • the flipped slice push-pull bridge The magnetoresistive sensor adopts a soft magnetic flux concentrator to realize the enhancement of its magnetic signal, and adopts a flip 180 degree slice to realize the magneto-resistance sensing unit and the magnetizing resistance sensing unit; 4.
  • U-shaped soft magnetic flux concentrator X-axis push-pull Bridge magnetoresistive sensor, in which the U-shaped soft magnetic flux concentrator alternates in the +Y and -Y directions, and the adjacent two U-shaped soft magnetic flux concentrators are arranged in the interdigitated direction
  • the magnetoresistive sensing unit has the same sensitive direction and is in the X direction, and the push magnetoresistive sensing unit string and the magnetizing resistive sensing unit string are alternately located in the interdigital gap; 5.
  • UH type soft magnetic flux concentrator X-axis push-pull magnetic a resistance sensor in which the openings of the H-type soft magnetic flux concentrator and the U-shaped soft magnetic flux concentrator are both oriented in the +Y or -Y direction, and adjacent two H soft magnetic flux concentrators or U and H soft magnetic flux concentrator interdigital fingers are arranged,
  • the magnetoresistive sensing unit has the same sensitive direction and is in the X direction, and the push magnetoresistive sensing unit string and the magnetizing resistive sensing unit string are alternately located in the interdigital finger gap.
  • the Y-axis magnetoresistive sensor there are also the following types: 1.
  • the X-axis magnetoresistive sensor is flipped by 90 degrees; 2.
  • the method of scanning laser thermal annealing is used to directly write the +Y push magnetoresistive sensing unit array and -Y pull-in magneto-resistance sensing unit array, and use soft magnetic flux concentrator array to realize the enhancement of its external magnetic field; 3.
  • the sensitive direction of the magnetoresistive sensing unit is the same as the X direction, and the push magnetoresistive sensing unit and the magnetizing resistive sensing unit are alternately located in the adjacent two soft magnetic flux concentrators. Intermediate gap.
  • a soft magnetic flux concentrator array is used, wherein the push magnetoresistive sensing unit string and the magnetizing resistive sensing unit string are respectively located above or below the surface of the soft magnetic flux concentrator and equidistant from the center line of the Y axis. Two locations.
  • a triaxial premodulated low noise magnetoresistive sensor includes a substrate, X, Y and Z axis pre-modulated low noise magnetoresistive sensors on said substrate, said X, Y And Z-axis pre-modulated low-noise magnetoresistive sensors including X, Y and Z-axis magnetoresistive sensing element arrays, X, Y and Z-axis soft magnetic flux concentrator arrays, and X, Y and Z-axis pre-modulated wire arrays, respectively
  • the X, Y and Z-axis magnetoresistive sensing unit arrays are electrically connected to X, Y and Z-axis magnetoresistive sensing bridges, respectively, and the X, Y and Z-axis pre-modulated wire arrays are electrically connected to two ports X, respectively.
  • the Y and Z axis excitation coils when measuring the external magnetic field, the X, Y and Z axis two port excitation coils respectively pass the high frequency alternating current excitation power source of frequency f, and the X, Y, Z axis magnetoresistive sensor output frequency is The 2f harmonic signal component is demodulated to obtain X, Y and Z axis low noise signals.
  • the X, Y and Z-axis magnetoresistive sensing cell arrays have the same magnetic field sensitive direction, and the magnetoresistive sensing unit wafers are obtained by the same magnetic field annealing process.
  • the X- and Y-axis magnetoresistive sensing unit arrays respectively have magnetic field sensitive directions of +X, -X, +Y and -Y axes, and are respectively obtained by laser programmable scanning heating annealing, and the Z-axis magnetoresistive sensing unit has X or Y axis magnetic field sensitive direction.
  • the X-axis magnetoresistive sensor and the Y-axis magnetoresistive sensor are respectively obtained by inverting 90, 180, and 270 degrees of a single magnetic field sensitive direction element slice.
  • the magnetoresistive sensing unit is of the GMR, TMR or AMR type.
  • the magnetoresistive sensing unit bridge is a half bridge, a full bridge or a quasi-bridge structure.
  • the X-axis magnetoresistive sensor is a reference bridge X-axis magnetoresistive sensor, and the X-axis sensitive magnetoresistive sensing unit string is located at the gap of the X-axis soft magnetic flux concentrator array, and the X-axis reference magnetoresistive sensing unit string is located at the An X-axis soft magnetic flux concentrator upper surface or a lower surface Y-axis centerline position, the X-axis modulation wire being parallel to the Y-axis centerline and located in the X-axis soft magnetic flux concentrator, and the X-axis
  • the soft flux concentrator forms a soft magnetic material layer/modulation wire layer/soft magnetic material layer sandwich composite structure, and the soft magnetic material layer and the modulation wire layer are separated by an insulating material layer, and two adjacent The X-axis modulation wires have opposite current directions.
  • the X-axis magnetoresistive sensor is a reference X-axis magneto-resistance sensor comprising a sensitive soft magnetic flux concentrator and a reference soft magnetic flux concentrator, two reference magnetoresistive sensing unit strings and two sensitive magnetic fluxes
  • the resistance sensing unit strings are respectively located at two positions of the reference soft magnetic flux concentrator and the upper surface or the lower surface of the sensitive soft magnetic flux concentrator symmetrically with respect to the Y-axis center line
  • the X-axis modulation wires are respectively located at the Referring to the soft magnetic flux concentrator and the sensitive soft magnetic flux concentrator and parallel to the Y-axis center line, and forming a soft magnetic material layer/modulating wire layer/soft magnetic material layer sandwich composite structure with the soft magnetic flux concentrator,
  • the soft magnetic material layer and the modulation wire layer are separated by an insulating material layer, and two adjacent X-axis modulation wires have opposite current directions.
  • the X-axis magnetoresistive sensor is an X-axis push-pull bridge magnetoresistive sensor of a U-shaped soft magnetic flux concentrator, and the push magnetoresistive sensing unit string and the magnetizing resistive sensing unit string are alternately located in the U-shaped soft
  • the modulation wire is located in the interdigital finger of the U-shaped soft magnetic flux concentrator, and forms a sandwich composite structure of a soft magnetic material layer/modulating wire layer/soft magnetic material layer, the soft The magnetic material layer and the modulating wire layer are separated by an insulating material layer, and two adjacent ones of the modulating wires have opposite current directions.
  • the X-axis magnetoresistive sensor is a H-type soft magnetic flux concentrator-U-type soft magnetic flux concentrator hybrid X-axis push-pull bridge type magnetoresistive sensor, the push magnetoresistive sensing unit string and the magnetizing resistance sensing unit string Alternatingly located in the interdigital finger gap of the UH hybrid structure, the modulation wire is located in the interdigital finger, and the soft magnetic material layer and the modulation wire layer are separated by an insulating material layer, and two adjacent modulations are The wires have opposite current directions.
  • the Y-axis magnetoresistive sensor is a Y-axis comb-shaped push-pull bridge type magnetoresistive sensor, and the push magnetoresistive sensing unit string and the magnetizing resistance sensing unit string are alternately located in the interdigital finger gap.
  • the modulation wire is located in the interdigital finger, the soft magnetic material layer/modulation wire layer/soft magnetic material layer sandwich composite structure, the soft magnetic material layer and the modulation wire layer are separated by an insulating material layer, and two adjacent The modulating wires have opposite current directions, the X-axis connecting wires are located in a region deviating from the comb; or the modulating wires are located in the comb to form a soft magnetic material layer/modulating wire layer/soft magnetic material layer sandwich A composite structure, and the modulated wires in the two combs have opposite current directions.
  • the Y-axis magnetoresistive sensor is a soft magnetic flux concentrator block array type push-pull bridge type magnetoresistive sensor, comprising two rows of N rows and M columns and N-1 rows and M columns of two soft magnetic flux concentrator blocks arranged in the Y direction.
  • Array one and array two, the push magnetoresistive sensing unit and the magnetizing resistance sensing unit are alternately located at a gap between the magnetic block array one and the array two, the modulation wires along the array one and the array
  • the soft magnetic flux concentrator block rows of the two are alternately arranged, and the soft magnetic material layer/modulating wire layer/soft magnetic material layer composite sandwich structure is formed with the soft magnetic block, and the adjacent modulated wires have opposite current directions.
  • the Z-axis magnetoresistive sensor is a push-pull bridge magnetoresistive sensor including an array of soft magnetic flux concentrators, and the magneto-resistance sensing unit string and the magnetizing resistance sensing unit string are located on an upper surface of the soft magnetic flux concentrator Or a lower surface and two positions symmetrical with respect to a center line of the Y-axis, the modulation wire is located in the soft magnetic flux concentrator, and forms a composite sandwich structure of a soft magnetic material layer/modulation wire/soft magnetic material layer, adjacent to two The modulating wires have opposite current directions.
  • the X and Y-axis magnetoresistive sensors are a multi-layer structure pre-modulation low-noise magnetoresistive sensor comprising an X-axis soft magnetic flux concentrator array and a Y-axis soft magnetic flux concentrator array, the X push magnetoresistive sensing unit Strings and X-pull magnetoresistive sensing cell strings are respectively located at the X-axis soft magnetic flux concentrator gap, and the Y-push magnetoresistive sensing cell string and the Y-collecting magnetoresistive sensing cell string are respectively located in the Y-axis soft magnetic flux At the concentrator gap.
  • the present invention has the following beneficial effects:
  • the X, Y, and Z-axis magnetoresistive sensors respectively realize the movement of the measurement signal from the low frequency to the high frequency through the static soft magnetic flux concentrator structure and the dynamic alternating current, and reduce the noise of the magnetoresistive sensor;
  • the X-, Y-, and Z-axis magnetoresistive sensors constitute a three-axis pre-modulation low-noise magnetoresistive sensor with a simple structure, a small size, and a relatively simple process.
  • FIG. 1 is a schematic diagram of a reference bridge type X-axis magnetoresistive sensor pre-modulation structure 1;
  • FIG. 2 is an external magnetic field distribution diagram of a pre-modulation structure 1 of a reference bridge type X-axis magnetoresistive sensor
  • FIG. 3 is an excitation magnetic field distribution diagram of a pre-modulation structure 1 of a reference bridge type X-axis magnetoresistive sensor
  • FIG. 4 is a schematic diagram of a reference bridge type X-axis magnetoresistive sensor pre-modulation structure 2;
  • FIG. 5 is an external magnetic field distribution diagram of a pre-modulation structure 2 of a reference bridge X-axis magnetoresistive sensor
  • FIG. 6 is an excitation magnetic field distribution diagram of a pre-modulation structure 2 of a reference bridge X-axis magnetoresistive sensor
  • FIG. 7 is a pre-modulation structure diagram of a U-shaped soft magnetic flux concentrator push-pull bridge type X-axis magnetoresistive sensor
  • FIG. 8 is a diagram showing an external magnetic field distribution of a pre-modulated structure of a U-shaped soft magnetic flux concentrator push-pull bridge type X-axis magnetoresistive sensor
  • FIG. 9 is a distribution diagram of a pre-modulation structure excitation magnetic field of a U-shaped soft magnetic flux concentrator push-pull bridge type X-axis magnetoresistive sensor
  • FIG. 10 is a pre-modulation structure diagram of a push-pull bridge type X-axis magnetoresistive sensor of a U-H type soft magnetic flux concentrator;
  • Figure 11 is a pre-modulation structure diagram of a comb-type soft magnetic flux concentrator push-pull bridge type Y-axis magnetoresistive sensor
  • Figure 12 is a diagram showing the excitation magnetic field distribution of the pre-modulation structure of the comb-type soft magnetic flux concentrator push-pull bridge Y-axis magnetoresistive sensor
  • Figure 13 is a diagram showing the external magnetic field distribution of the pre-modulation structure of the comb-type soft magnetic flux concentrator push-pull bridge type Y-axis magnetoresistive sensor
  • FIG. 14 is a pre-modulation structure diagram of a soft magnetic flux concentrator rectangular array push-pull bridge type Y-axis magnetoresistive sensor
  • 15 is a pre-modulation structure diagram of a push-pull bridge type Z-axis magnetoresistive sensor
  • Figure 16 is a diagram showing the external magnetic field distribution of the pre-modulation structure of the push-pull bridge type Z-axis magnetoresistive sensor
  • 17 is a schematic diagram of a excitation magnetic field distribution of a pre-modulation structure of a push-pull bridge type Z-axis magnetoresistive sensor
  • Figure 18 is a structural diagram of an XYZ three-axis pre-modulated structure magnetoresistive sensor.
  • the present invention aims to provide an XYZ three-axis pre-modulation low-noise magnetoresistive sensor, including an X-axis magnetoresistive sensor, a Y-axis magnetoresistive sensor, and a Z-axis magnetoresistive sensor.
  • the specific structures of the X-axis magnetoresistive sensor, the Y-axis magnetoresistive sensor, and the Z-axis magnetoresistive sensor are respectively referred to in the first embodiment, the second embodiment, and the third embodiment, and the XYZ triaxial pre-modulation composed of the three-axis magnetoresistive sensor. See Example 4 for a low noise magnetoresistive sensor.
  • Figure 1 is a structural diagram of a reference bridge pre-modulated low-noise X-axis magnetoresistive sensor, where 1 is the area where the sensor is located, where 2 is a string of sensitive magnetoresistive sensing elements located at the gap of the soft magnetic flux concentrator array, and 4 is located at the soft magnetic flux a reference magnetoresistive sensing cell string at the center of the concentrator 3 or at the center of the Y-axis of the lower surface, the two-port pre-modulating coil 5 comprising an array of pre-modulated wires in the soft magnetic flux concentrator, and adjacent pre-modulated wires 6 and 7 has the opposite current direction.
  • FIGS. 2 and 3 are schematic diagrams of the operation of the reference bridge pre-modulated low-noise X-axis magnetoresistive sensor 1, respectively, in which the pre-modulated wires 10 and 11 are located in a soft magnetic flux concentrator and form a soft magnetic material layer 8 / wire layer 10 / soft a composite multilayer film structure of the magnetic material layer 9, and the soft magnetic material layer and the wire layer are electrically isolated by an insulating material layer, and the adjacent two pre-modulated wires 10 and 11, 11 and 12 have opposite current directions, in advance
  • the modulated wire excitation current generates magnetic fields -He and He having opposite directions in the soft magnetic material layer 8 and the soft magnetic material layer 9.
  • the external magnetic field Hx acts on all layers of the soft magnetic material
  • the magnetic field sensed by the sensitive magnetoresistive sensing unit 13 is a vector superposition of the magnetic fields generated by the adjacent two layers of soft magnetic material, and it can be seen that the phase
  • the adjacent sensitive magnetoresistive sensing unit 15 has the same magnetic field vector sum as that of the sensitive magnetoresistive sensing unit 13.
  • FIG. 3 is a magnetic field distribution diagram when the external magnetic field Hx is 0, and the magnetic fields generated by the adjacent two soft magnetic material layers in the sensitive magnetoresistive sensing unit are equal in magnitude and opposite in direction, and when the external magnetic field is introduced, One of the soft magnetic material layers is enhanced in magnetic field, while the other soft magnetic material layer has a reduced magnetic field and therefore has different magnetic permeability, and thus is similar to a fluxgate, so that the external magnetic field is modulated in the sensitive magnetoresistive sensing unit.
  • a magnetic field signal that excites the magnetic field frequency and is measured by a sensitive magnetoresistive sensing unit.
  • the excitation magnetic field components corresponding to the adjacent two reference magnetoresistive sensing units 14 and 16 are 0, and under the action of the external magnetic field, the adjacent two soft The magnetic material layers have different magnetization states, and the modulation of the external magnetic field by the excitation magnetic field has the same frequency change, so that the reference magnetoresistive sensor output signal is modulated into an output signal having an f frequency.
  • FIG. 4 is a structural diagram of a reference bridge pre-modulated low-noise X-axis magnetoresistive sensor 2, 20 is a region where the sensor is located, and includes two sets of soft flux concentrators of different widths, that is, a wide flux concentrator 21, 24 and a narrow flux concentration.
  • the pre-modulated wire 33 includes a pre-modulated wire array 34, 35, 36, 37 in the soft magnetic flux concentrator, and adjacent two pre-modulated wires have opposite excitation current directions.
  • Figures 5 and 6 show the modulation of the excitation current on the magnetoresistive sensing element string with the external magnetic field Hx and the distribution of the excitation current magnetic field -He and He at the magnetoresistive sensing unit string when the external magnetic field Hx is 0, respectively.
  • the sensitive magnetoresistive sensing units 25 and 26 sense the interaction of the excitation magnetic field and the external magnetic field, that is, Hx+He, and the 31 and 32 sensing magnetic fields are Hx-He, corresponding to the magnetoresistive sensing unit 25 of Fig. 6, 26
  • the external excitation magnetic field is He and -He. When there is no external magnetic field, the average magnetic field of the magnetoresistive sensing unit is 0.
  • the magnetic permeability of the soft magnetic material is in different states, so that it is similar to the fluxgate, so that the change of the external magnetic field will be modulated into the same frequency change of the excitation magnetic field, and the magnetoresistance sensing is performed.
  • the signal output at both ends of the unit similarly, for the magnetoresistive sensing units 27 and 29, the change of the external magnetic field is also modulated into the same frequency variation of the excitation magnetic field, and the signal output through both ends of the magnetoresistive sensing unit is simultaneously
  • the narrowing soft magnetic flux concentrator has different attenuation ratios for the external magnetic field. One of them is used as the reference magnetoresistive sensing unit, and the other is used as the sensitive magnetoresistive sensing unit. To the new X-axis reference bridge pre-modulated magnetoresistive sensor.
  • FIG. 7 is a structural diagram of an X push-pull bridge type magnetoresistive sensor of a U-shaped soft magnetic flux concentrator structure, wherein 40 is a region where the sensor is located, and includes a plurality of U-shaped soft magnetic flux concentrators 41, 43 and an opening-direction to the +Y.
  • Y U-shaped soft magnetic flux concentrator 42 each U-shaped soft magnetic flux concentrator has two fingers, the interdigitated finger of the U-shaped soft magnetic flux concentrator with opening to +Y and the U-shaped soft magnetic flux concentrator with opening to -Y The fingers are interdigitated with each other to form an interdigitated gap therebetween, and the magnetoresistive sensing unit string 45 and the magnetoresistive sensing unit string are alternately located in the interdigital gap.
  • the pre-modulated wires 44 are located in the fingers of the U-shaped soft magnetic flux concentrator, and adjacent wires have opposite current directions.
  • Figure 8 and Figure 9 show the magnetic field distribution of the excitation magnetic field -He and He and the external magnetic field Hx in the position of the magnetoresistive sensing unit string and the magnetizing resistance sensing unit string, respectively, in the presence or absence of the external magnetic field Hx.
  • the magnetoresistive sensing unit 45 and the magnetizing resistor unit 46 have opposite magnetic field distribution characteristics, wherein the magnetic field generated by one soft magnetic layer is He+Hx, and the other side is soft magnetic.
  • the magnetic field generated by the layer is Hx-He, and in the absence of an external magnetic field, the sum of the magnetic field vectors is zero. Therefore, it conforms to the modulation effect of the soft magnetic material on the external magnetic field under the condition of high-frequency excitation magnetic field.
  • Figure 10 is a UH soft magnetic flux concentrator interdigitated X push-pull bridge type magnetoresistive sensor
  • 50 is the area where the sensor is located, wherein two adjacent H-type soft magnetic flux concentrators 51 and 53 each have an opening toward the Y direction, and
  • the fingers 51 and 53 are interdigitated by a U-shaped soft magnetic flux concentrator 52, and the urging resistance sensing unit and the magnetizing resistance sensing unit are interposed in the interdigital gap.
  • 51 are pre-modulated wires, respectively located in the fingers, and adjacent pre-modulated wires have opposite current directions.
  • the working principle analysis of the external magnetic field and the external magnetic field is the same as that of the U-shaped soft magnetic flux concentrator X push-pull bridge type magnetoresistive sensor.
  • Figure 11 is a cross-comb Y-axis push-pull bridge type magnetoresistive sensor, wherein 50 is the area where the sensor is located, including two oppositely disposed opening Y-direction and interdigitated comb-shaped soft magnetic flux concentrators 51 and 52, i.e., each The soft magnetic flux concentrator includes a comb extending along X, a plurality of fingers extending from the comb to another soft magnetic flux concentrator, the plurality of interdigital fingers are spaced apart, and the interdigitated fingers of the two soft magnetic flux concentrators are Alternately arranged to form a plurality of interdigitated gaps.
  • the push magnetoresistive sensing cell string 54 and the magnetizing resistor sensing cell string 55 are distributed in the interdigital gap, the pre-modulating wires 53 are distributed in the interdigital fingers, and the adjacent two pre-modulating wires have opposite current directions.
  • the working principle analysis of the external magnetic field and the external magnetic field is the same as that of the U-shaped soft magnetic flux concentrator X push-pull bridge type magnetoresistive sensor.
  • 12 and 13 are schematic views of another pre-modulated wire structure including two modulated wires 56 and 57 having opposite current directions, respectively located in the upper and lower combs, and having opposite current directions.
  • 12 is a case where only an external magnetic field has no excitation magnetic field
  • the magneto-sensitive resistance sensing unit string 54 and the magnetizing resistance sensing unit string 55 have opposite excitation magnetic fields of 0 and +Hex-Hex offset
  • FIG. 13 has
  • the magnetic field Hy is applied, the magnetic field in the -Hyx direction is enhanced for the magnetoresistive sensing unit string 54, and the magnetic field in the Hyx direction is enhanced for the magnetoresistive sensing unit string 55. Therefore, the soft magnetic material layer is strengthened. The magnetic permeability changes and the excitation current magnetic field cannot be cancelled, thereby modulating Hyx into the magnetic field of the Hex frequency.
  • Figure 14 is a Y-axis push-pull bridge type magnetoresistive sensor of a soft magnetic flux concentrator rectangular block structure, comprising two rectangular soft magnetic flux concentrator arrays arranged in a misaligned arrangement, wherein one soft magnetic flux concentrator array 63, 64 is located in another soft magnetic flux concentration Between the arrays 61 and 62, and offset along the Y axis, and located to the left or right of the adjacent two gaps.
  • the magnetic field distribution is as shown in the figure, and the adjacent two X magnetic field classifications have opposite magnetic field directions.
  • the modulated conductive coil is shown in Figure 14.
  • the wire is connected to all soft magnetic flux rectangular blocks in the Y direction and is located in the soft magnetic flux rectangular block.
  • the adjacent two modulated wires 65 and 66 have opposite current directions for any pair of push magnet resistors.
  • the sensing unit 67 and the magnetizing resistance sensing unit 68 have the same magnetic field distribution relationship between the excitation magnetic field and the external magnetic field and the U-shaped soft magnetic flux concentrator X push-pull bridge type magnetoresistive sensor.
  • Figure 15 is a Z-axis magnetoresistive push-pull bridge type magnetoresistive sensor
  • 70 is the area where the sensor is located
  • 71 and 72 are soft magnetic flux concentrator arrays
  • 73 and 74, 75 and 76 are located on the upper or lower surface of the soft magnetic flux concentrator.
  • 77 is a pre-modulating conducting coil, including pre-modulated wires 78 and 79 in the soft magnetic flux concentrator, and adjacent The pre-modulated wires have opposite current directions.
  • FIG. 16 and 17 are magnetic field distributions of the magnetoresistive sensing units 73, 74, 75 and 76 under the excitation magnetic field He when the Z-axis magnetic field Hz and the Z-axis magnetic field are 0.
  • the sensing units 73 and 75 have excitation magnetic fields He and -He when the external magnetic field is 0, respectively, and therefore, in the case of series connection, the average magnetic field is zero.
  • Figure 16 shows that the Hz magnetic field is converted into two magnetic field components Hzx and -Hzx after passing through the soft magnetic flux concentrator, and has the same -Hzx magnetic field component for 73 and 75, with the result that one of the magnetic fields increases and the other magnetic field decreases.
  • the frequency of the excitation magnetic field is successfully modulated into the signal.
  • Fig. 17 there are opposite excitation magnetic fields He and -He, so the average field of the magnetic field is 0, and in Fig. 16,
  • the magnetic field component of Hzx results in the appearance of magnetic field components opposite those of 73 and 75, and thus, after modulation, is still used as a magnetoresistive sensing unit and a magnetoresistive sensing unit.
  • FIG. 18 is a structural diagram of an XYZ triaxial pre-modulated low noise magnetoresistive sensor, including an X-axis pre-modulation sensor 100 as provided in Embodiment 1, a Y-axis pre-modulation sensor 110 as provided in Embodiment 2, and a Z as provided in Embodiment 3.
  • the axis pre-modulates the sensor 120.

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Abstract

一种三轴预调制低噪声磁电阻传感器，包括X轴磁电阻传感器（100）、Y轴磁电阻传感器（110）和Z轴磁电阻传感器（120），X、Y和Z轴磁电阻传感器分别包括X、Y和Z轴磁电阻传感单元阵列，X、Y和Z轴软磁通量集中器阵列，以及X、Y和Z轴预调制导线阵列，X、Y和Z轴磁电阻传感单元阵列分别电连接成X、Y和Z轴磁电阻传感电桥， X、Y和Z轴预调制导线阵列分别电连接成两端口X、Y和Z轴激励线圈，测量外磁场时，X、Y和Z轴两端口激励线圈分别通过f频率高频交流激励电源，X轴磁电阻传感器（100）、Y轴磁电阻传感器（110）和Z轴磁电阻传感器（120）输出频率为2f谐波信号分量，并经解调可以得到X、Y和Z轴低噪声信号。具有结构简单，小尺寸和低噪声的优点。

Description

一种三轴预调制低噪声磁电阻传感器 技术领域
本发明涉及磁性传感器领域，特别涉及一种三轴预调制低噪声磁电阻传感器。
背景技术
磁电阻传感器在正常使用时，存在着1/f噪声，降低磁电阻传感器的噪声，发展低噪声磁电阻传感器，对于提高磁信号的精确测量具有重要的意义。一般情况下，磁电阻传感器在低频时具有高的1/f噪声，而在高频时，则以热噪声为主，其噪声能量密度大大低于低频时的噪声能量密度，因此，选择将磁信号预先调制成高频磁场，而后再被磁电阻传感器测量，输出高频频率电压信号，而后进行解调，可以实现将磁信号测量从低频区域移动到高频区域的目的，从而降低1/f噪声能量密度。
通过使用MEMS技术，在磁电阻传感器表面加工软磁通量集中器的振动结构，并驱动软磁通量集中器在磁电阻传感器表面周期性的振动，从而实现对静态外磁场的调制，该技术虽然有助于降低磁电阻传感器1/f噪声，但是，振动结构以及驱动器的加入使得磁电阻传感器的复杂程度和尺寸大为增加，工艺复杂程度也大为增加。
三轴磁电阻传感器可以作为电子罗盘实现对空间磁场的三维测量，通常情况下，三轴磁电阻传感器的测量都是在静态磁场下实现对三维磁场的测量，因此存在着1/f噪声，影响对外磁场的测量精度，因此本发明旨在提出一种三轴预调制磁电阻传感器，能够实现测量信号的高频输出，从而获得低噪声的测量信号。
发明内容
本发明提出了一种三轴预调制低噪声磁电阻传感器，能够实现测量信号 的高频输出，从而获得低噪声的测量信号。
三轴磁电阻传感器包括X轴磁电阻传感器，Y轴磁电阻传感器和Z轴磁电阻传感器，所述与软磁通量集中器相关的X轴磁电阻传感器包括：1、单芯片参考桥式磁电阻传感器，包括位于软磁通量集中器间隙处的敏感磁电阻传感单元串和位于软磁通量集中器上表面或者下表面的参考磁电阻传感单元串；2、单芯片高灵敏度推挽式磁电阻传感器，采用扫描激光热退火的方法来获得+X推磁电阻传感单元阵列和-X挽磁电阻传感单元阵列，并采用软磁通量集中器阵列实现其外磁场的增强；3、翻转切片推挽桥式磁电阻传感器，采用软磁通量集中器来实现其磁信号的增强，采用翻转180度切片实现推磁电阻传感单元和挽磁电阻传感单元；4、U型软磁通量集中器X轴推挽桥式磁电阻传感器，其中U型软磁通量集中器开口方向交替为+Y和-Y方向，相邻两个U型软磁通量集中器叉指排列，磁电阻传感单元敏感方向相同，且为X方向，推磁电阻传感单元串和挽磁电阻传感单元串交替位于叉指间隙中；5、U-H型软磁通量集中器X轴推挽式磁电阻传感器，其中H型软磁通量集中器和U型软磁通量集中器的开口均朝向+Y或-Y方向，并且相邻两个H软磁通量集中器或者U和H软磁通量集中器叉指排列，磁电阻传感单元敏感方向相同，且为X方向，推磁电阻传感单元串和挽磁电阻传感单元串交替位于所述叉指间隙中。
对于Y轴磁电阻传感器，也存在如下几种类型：1、将上述X轴磁电阻传感器翻转90度；2、采用扫描激光热退火的方法，直接写入+Y推磁电阻传感单元阵列和-Y挽磁电阻传感单元阵列，并采用软磁通量集中器阵列实现其外磁场的增强；3、采用两个梳状软磁通量集中器实现叉指排列，其中梳座为平行于X方向，梳齿开口为Y方向，磁电阻传感单元磁场敏感方向为X方向，所述推磁电阻传感单元串和挽磁电阻传感单元串交替位于所述叉指间隙中；4、采用两个软磁通量集中器矩形块阵列沿X方向交叉，并沿Y方向错位排列的Y轴推挽式磁电阻传感器，其中一个软磁通量集中器阵列所对应的软磁块位于另一个软磁通量集中器阵列的间隙左边或者右边，磁电阻传感单元的敏感方向同为X方向，推磁电阻传感单元和挽磁电阻传感单元交替位于所述 相邻两个软磁通量集中器形成的间隙中间。
对于Z轴磁电阻传感器，采用软磁通量集中器阵列，其中推磁电阻传感单元串和挽磁电阻传感单元串分别位于软磁通量集中器表面上方或者下方，且距离Y轴中心线等距离的两个位置处。
根据本发明的一个具体方面，一种三轴预调制低噪声磁电阻传感器，包括衬底，位于所述衬底上的X，Y和Z轴预调制低噪声磁电阻传感器，所述X，Y和Z轴预调制低噪声磁电阻传感器分别包括X，Y和Z轴磁电阻传感单元阵列，X，Y和Z轴软磁通量集中器阵列，以及X，Y和Z轴预调制导线阵列，所述X，Y和Z轴磁电阻传感单元阵列分别电连接成X，Y和Z轴磁电阻传感电桥，所述X，Y和Z轴预调制导线阵列分别电连接成两端口X，Y和Z轴激励线圈，测量外磁场时，所述X，Y和Z轴两端口激励线圈分别通过频率为f的高频交流激励电源，所述X,Y,Z轴磁电阻传感器输出频率为2f的谐波信号分量，并经解调可以得到X，Y和Z轴低噪声信号。
所述X，Y和Z轴磁电阻传感单元阵列具有相同的磁场敏感方向，且所述磁电阻传感单元晶圆通过同一磁场退火工艺得到。
所述X，Y轴磁电阻传感单元阵列分别具有+X，-X，+Y和-Y轴磁场敏感方向，且分别通过激光程控扫描加热退火获得，所述Z轴磁电阻传感单元具有X或者Y轴磁场敏感方向。
所述X轴磁电阻传感器和Y轴磁电阻传感器分别通过单磁场敏感方向元切片分别翻转90，180，270度得到。
所述磁电阻传感单元为GMR，TMR或者AMR类型。
所述磁电阻传感单元电桥为半桥，全桥或者准桥结构。
所述X轴磁电阻传感器为参考桥式X轴磁电阻传感器，X轴敏感磁电阻传感单元串位于所述X轴软磁通量集中器阵列间隙处，X轴参考磁电阻传感单元串位于所述X轴软磁通量集中器上表面或者下表面Y轴中心线位置，所述X轴调制导线平行于所述Y轴中心线且位于所述X轴软磁通量集中器中，并和所述X轴软通量集中器形成软磁材料层/调制导线层/软磁材料层三明治复合结构，所述软磁材料层和所述调制导线层之间通过绝缘材料层隔离，且 相邻两个所述X轴调制导线具有相反电流方向。
所述X轴磁电阻传感器为参考X轴磁电阻传感器，所述X轴软磁通量集中器包括敏感软磁通量集中器和参考软磁通量集中器，两个参考磁电阻传感单元串和两个敏感磁电阻传感单元串分别位于所述参考软磁通量集中器和所述敏感软磁通量集中器上表面或者下表面相对于Y轴中心线对称的两个位置处，所述X轴调制导线分别位于所述参考软磁通量集中器和所述敏感软磁通量集中器中并和所述Y轴中心线平行，并和所述软磁通量集中器形成软磁材料层/调制导线层/软磁材料层三明治复合结构，所述软磁材料层和所述调制导线层之间并通过绝缘材料层隔离，且相邻两个所述X轴调制导线具有相反电流方向。
所述X轴磁电阻传感器为U型软磁通量集中器的X轴推挽桥式磁电阻传感器，所述推磁电阻传感单元串和挽磁电阻传感单元串分别交替位于所述U型软磁通量集中器的叉指间隙中，所述调制导线位于所述U形软磁通量集中器的叉指中，并形成软磁材料层/调制导线层/软磁材料层的三明治复合结构，所述软磁材料层和所述调制导线层之间通过绝缘材料层隔离，且相邻两个所述调制导线具有相反电流方向。
所述X轴磁电阻传感器为H型软磁通量集中器-U型软磁通量集中器混合型X轴推挽桥式磁电阻传感器，所述推磁电阻传感单元串和挽磁电阻传感单元串分别交替位于所述U-H混合结构叉指间隙中，所述调制导线位于所述叉指中，软磁材料层和所述调制导线层之间通过绝缘材料层隔离，且相邻两个所述调制导线具有相反电流方向。
所述Y轴磁电阻传感器为Y轴梳状叉指型推挽桥式磁电阻传感器，所述推磁电阻传感单元串和挽磁电阻传感单元串交替位于所述叉指间隙中，所述调制导线位于所述叉指中，软磁材料层/调制导线层/软磁材料层的三明治复合结构，软磁材料层和所述调制导线层之间通过绝缘材料层隔离，且相邻两个所述调制导线具有相反电流方向，所述X轴连接导线位于偏离梳座的区域；或者所述调制导线位于所述梳座中，形成软磁材料层/调制导线层/软磁材料层三明治复合结构，且两个梳座中的所述调制导线具有相反电流方向。
所述Y轴磁电阻传感器为软磁通量集中器块状阵列型推挽桥式磁电阻传感器，包括N行M列和N-1行M列的两个沿Y方向错位排列的软磁通量集中器块阵列一和阵列二，所述推磁电阻传感单元和挽磁电阻传感单元交替位于所述磁块阵列一和阵列二之间的间隙处，所述调制导线沿着所述阵列一和阵列二的软磁通量集中器块行交替排列，且和所述软磁块形成软磁材料层/调制导线层/软磁材料层复合三明治结构，且相邻所述调制导线具有相反电流方向。
所述Z轴磁电阻传感器为包含软磁通量集中器阵列的推挽桥式磁电阻传感器，所述推磁电阻传感单元串和挽磁电阻传感单元串位于所述软磁通量集中器的上表面或者下表面且相对于Y轴中心线对称的两位置，所述调制导线位于所述软磁通量集中器中，并形成软磁材料层/调制导线/软磁材料层的复合三明治结构，相邻两所述调制导线具有相反电流方向。
所述X和Y轴磁电阻传感器均为一种多层结构预调制低噪声磁电阻传感器，包括X轴软磁通量集中器阵列和Y轴软磁通量集中器阵列，所述X推磁电阻传感单元串和X挽磁电阻传感单元串分别位于所述X轴软磁通量集中器间隙处，所述Y推磁电阻传感单元串和Y挽磁电阻传感单元串分别位于所述Y轴软磁通量集中器间隙处。
与现有技术相比，本发明具有如下有益效果：
X、Y、Z轴磁电阻传感器中分别通过静态的软磁通量集中器结构，以及动态的交流电流，实现了测量信号从低频向高频的移动，并降低了磁电阻传感器的噪声；且由上述X、Y、Z轴磁电阻传感器构成三轴预调制低噪声磁电阻传感器结构较简单、尺寸较小，工艺较为简单。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它附图。
图1为参考桥式X轴磁电阻传感器预调制结构一的示意图；
图2为参考桥式X轴磁电阻传感器预调制结构一的外磁场分布图；
图3为参考桥式X轴磁电阻传感器预调制结构一的激励磁场分布图；
图4为参考桥式X轴磁电阻传感器预调制结构二的示意图；
图5为参考桥式X轴磁电阻传感器预调制结构二的外磁场分布图；
图6为参考桥式X轴磁电阻传感器预调制结构二的激励磁场分布图；
图7为U型软磁通量集中器推挽桥式X轴磁电阻传感器预调制结构图；
图8为U型软磁通量集中器推挽桥式X轴磁电阻传感器预调制结构外磁场分布图；
图9为U型软磁通量集中器推挽桥式X轴磁电阻传感器预调制结构激励磁场分布图；
图10为U-H型软磁通量集中器推挽桥式X轴磁电阻传感器预调制结构图；
图11为梳型软磁通量集中器推挽桥式Y轴磁电阻传感器预调制结构图；
图12为梳型软磁通量集中器推挽桥式Y轴磁电阻传感器预调制结构激励磁场分布图；
图13为梳型软磁通量集中器推挽桥式Y轴磁电阻传感器预调制结构外磁场分布图；
图14为软磁通量集中器矩形阵列推挽桥式Y轴磁电阻传感器预调制结构图；
图15为推挽桥式Z轴磁电阻传感器预调制结构图；
图16为推挽桥式Z轴磁电阻传感器预调制结构外磁场分布图；
图17为推挽桥式Z轴磁电阻传感器预调制结构激励磁场分布图；
图18为XYZ三轴预调制结构磁电阻传感器结构图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述， 显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。
下面将参考附图并结合实施例，来详细说明本发明。本发明旨在提供一种XYZ三轴预调制低噪声磁电阻传感器，包括X轴磁电阻传感器、Y轴磁电阻传感器及Z轴磁电阻传感器。其中，X轴磁电阻传感器、Y轴磁电阻传感器、Z轴磁电阻传感器的具体结构分别参见实施例一、实施例二、实施例三，由该三轴磁电阻传感器构成的XYZ三轴预调制低噪声磁电阻传感器则参见实施例四。
实施例一
图1为参考桥式预调制低噪声X轴磁电阻传感器一结构图，1为传感器所在区域，其中2为位于软磁通量集中器阵列间隙处的敏感磁电阻传感单元串，4为位于软磁通量集中器3的上表面或者下表面Y轴中心处的参考磁电阻传感单元串，两端口预调制导线圈5包括位于软磁通量集中器中的预调制导线阵列，且相邻预调制导线6和7具有相反的电流方向。
图2和图3分别为参考桥式预调制低噪声X轴磁电阻传感器1的工作原理图，预调制导线10和11位于软磁通量集中器中并形成软磁材料层8/导线层10/软磁材料层9的复合多层薄膜结构，且软磁材料层和导线层之间采用绝缘材料层电隔离，相邻两个预调制导线10和11，11和12具有相反的电流方向，在预调制导线激发电流在软磁材料层8和软磁材料层9中产生具有相反方向的磁场-He和He。另一方面，外磁场Hx则作用于所有的软磁材料层，则敏感磁电阻传感单元13所感受的磁场为相邻两个软磁材料层所产生的磁场的矢量叠加，可以看出相邻的敏感磁电阻传感单元15具有相同于敏感磁电阻传感单元13的磁场矢量和。图3为外磁场Hx为0时磁场分布图，相邻两个软磁材料层在敏感磁电阻传感单元中所产生的磁场-He和He为大小相等，方向相反，而在外磁场引入时，其中一个软磁材料层磁场得到增强，而另外一个软磁材料层磁场减小，因此具有不同的磁导率，因此类似于磁通门，从而外磁场在敏感磁电阻传感单元将被调制成激发磁场频率的磁场信号，并被敏感磁电阻传感单元测量。对于参考磁电阻传感单元15，在外磁场Hx为0时，相邻两个参考磁电阻传感单元14和16所对应的激发磁场分量为0，而 在外磁场作用下，相邻的两个软磁材料层具有不同的磁化状态，外磁场经过激发磁场的调制具有相同频率的变化，这样参考磁电阻传感器输出信号被调制成具有f频率的输出信号。
图4为参考桥式预调制低噪声X轴磁电阻传感器二的结构图，20为传感器所在区域，包括两组宽度不同软磁通量集中器，即宽通量集中器21，24和窄通量集中器22和23，并且其相互排列关系为：宽/宽/窄/窄/宽/宽，即除两端外，中间位置的软磁通量集中器两两相邻，对于每种软磁通量集中器，分别对应一组磁电阻传感单元串，分别位于所述软磁通量集中器上表面或者下表面Y轴中心线两侧相同距离的两侧，如分别对应宽软磁通量集中器21，24的磁电阻传感单元串对25和26，31和32，对应窄软磁通量集中器22，23的磁电阻传感单元串27和28，29和30。预调制导线33包括位于所述软磁通量集中器中的预调制导线阵列34，35，36，37，且相邻两个预调制导线具有相反的激励电流方向。
图5和6分别为有外磁场Hx作用下激励电流对磁电阻传感单元串的调制作用以及外磁场Hx为0时，激励电流磁场-He和He在磁电阻传感单元串处的分布图。图5中敏感磁电阻传感单元25和26感受激励磁场和外磁场的共同作用，即Hx+He，而31和32感受磁场为Hx-He，对应的图6中磁电阻传感单元25，26感受外激励磁场为He和-He，两者在没有外磁场时，磁电阻传感单元的感受的平均磁场为0，而在外磁场作用时，其平衡受到破坏，其中一方激励磁场增强，另一方激励磁场受到减小，因此，软磁材料磁导率处于不同的状态，这样，类似于磁通门，从而外磁场的变化将调制到激励磁场相同频率的变化当中，并通过磁电阻传感单元的两端的信号输出，同样，对于磁电阻传感单元27和29，其外磁场的变化同样调制到激励磁场相同的频率变化当中，并通过磁电阻传感单元的两端的信号输出，同时由于宽窄软磁通量集中器对于外磁场的衰减比率的不同，将其中一个作为参考磁电阻传感单元，将另一个作为敏感磁电阻传感单元，将得到新的X轴参考桥式预调制磁电阻传感器。
图7为U型软磁通量集中器结构的X推挽桥式磁电阻传感器结构图，其 中40为传感器所在区域，包括多个开口向+Y的U型软磁通量集中器41，43和开口向-Y的U型软磁通量集中器42，每个U型软磁通量集中器具有两个叉指，开口向+Y的U型软磁通量集中器的叉指和开口向-Y的U型软磁通量集中器的叉指相互交错设置，相互之间形成叉指间隙，推磁电阻传感单元串45和挽磁电阻传感单元串交替位于叉指间隙中。预调制导线44位于U型软磁通量集中器的叉指中，且相邻所述导线具有相反的电流方向。
图8和图9分别为外磁场Hx有无情况下，激励磁场-He和He和外磁场Hx在推磁电阻传感单元串和挽磁电阻传感单元串位置的磁场分布图，可以看出，在外磁场存在条件下，推磁电阻传感单元45和挽磁电阻传感单元46具有相反的磁场分布特征，其中一边的软磁层所产生的磁场为He+Hx，而另一边的软磁层所产生的磁场为Hx-He，而在没有外磁场时，其磁场矢量和为0，因此，因此符合软磁材料在高频激励磁场条件下对外磁场的调制作用。
图10为U-H软磁通量集中器叉指形X推挽桥式磁电阻传感器，50为传感器所在的区域，其中相邻两个H型软磁通量集中器51和53各有一个开口朝Y方向，并且通过一个U型软磁通量集中器52叉指连接51和53，且推磁电阻传感单元和挽磁电阻传感单元交叉位于叉指间隙中。51为预调制导线，分别位于叉指之中，并且相邻的预调制导线具有相反的电流方向。
其在外磁场和外磁场为0时的工作原理分析与U型软磁通量集中器X推挽桥式磁电阻传感器相同。
实施例二
图11为交叉梳状Y轴推挽桥式磁电阻传感器，其中50为传感器所在区域，包括两个相对设置的开口Y向且叉指结构的梳齿软磁通量集中器51和52，即每个软磁通量集中器包括沿X延伸的梳座、多个自所述梳座向另一个软磁通量集中器延伸的叉指，多个叉指间隔设置，且两个软磁通量集中器的叉指交错且交替排列，从而形成多个叉指间隙。其中推磁电阻传感单元串54和挽磁电阻传感单元串55交叉分布在叉指间隙中，预调制导线53分布于叉指中，且相邻两个预调制导线具有相反的电流方向。其在外磁场和外磁场为 0时的工作原理分析与U型软磁通量集中器X推挽桥式磁电阻传感器相同。
图12和图13为另一种预调制导线结构的示意图，其中包括两个具有相反电流方向的调制导线56和57，分别位于上下两个梳座中，且具有相反的电流方向。其中图12为无外加磁场仅有激励磁场的情况，推磁电阻传感单元串54和挽磁电阻传感单元串55具有相反的激励磁场为0，及+Hex-Hex抵消，图13为具有外加磁场Hy的情况，则对于磁电阻传感单元串54，其-Hyx方向的磁场得到增强，而对于磁电阻传感单元串55，则其Hyx方向的磁场得到加强，因此，软磁材料层的磁导率发生变化，激励电流磁场不能抵消，从而将Hyx调制到Hex频率的磁场中。
图14为软磁通量集中器矩形块结构的Y轴推挽桥式磁电阻传感器，包括错位排列的两个矩形软磁通量集中器阵列，其中一个软磁通量集中器阵列63，64位于另一个软磁通量集中器阵列61和62之间，且沿Y轴错位移动，且相互位于相邻两个间隙左边或者右边。
在Y轴磁场作用下，其磁场分布如图所示，相邻两个X磁场分类具有相反的磁场方向。调制导电线圈如图14所示，导线沿Y方向连接所有软磁通量矩形块，并位于软磁通量矩形块中，相邻两个调制导线65和66具有相反的电流方向，对于任何一对推磁电阻传感单元67和挽磁电阻传感单元68，其在激励磁场和外磁场共同作用下的磁场分布关系与U型软磁通量集中器X推挽桥式磁电阻传感器相同。
实施例三
图15为Z轴磁电阻推挽桥式磁电阻传感器，70为传感器所在区域，71和72为软磁通量集中器阵列，73和74，75和76为位于软磁通量集中器上表面或者下表面上且距离Y轴中心线等距离的推磁电阻传感单元串和挽磁电阻传感单元串，77为预调制导线圈，包括位于软磁通量集中器中的预调制导线78和79，且相邻的预调制导线具有相反的电流方向。
图16和图17为磁电阻传感单元73，74，75和76在Z轴磁场Hz以及Z轴磁场为0时，在激励磁场He下的磁场分布，从图17可以看出，推磁电阻 传感单元73和75在外磁场为0时的分别具有激励磁场He和-He，因此在串联情况下，其平均磁场为0。图16为Hz磁场在经过软磁通量集中器之后转变成两个磁场分量Hzx和-Hzx，对于73和75，具有相同的-Hzx磁场分量，其结果在于，其中一个磁场增加，另一个磁场减小，从而成功的将激励磁场的频率调制到信号之中，对于74和76，在图17中，具有相反的激励磁场He和-He，因此磁场平均场为0，而在图16中，则由于Hzx的磁场分量，导致出现与73和75相反的磁场分量，从而在经过调制之后，仍旧是作为推磁电阻传感单元和挽磁电阻传感单元。
实施例四
图18为XYZ三轴预调制低噪声磁电阻传感器结构图，包括如实施例一提供的X轴预调制传感器100、如实施例二提供的Y轴预调制传感器110和如实施例三提供的Z轴预调制传感器120。
以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明，不能认定本发明的具体实施只局限于这些说明。对于本领域技术人员而言，显然本申请不限于上述示范性实施例的细节，而且在不背离本申请的精神或基本特征的情况下，能够以其他的具体形式实现本申请。因此，无论从哪一点来看，均应将实施例看作是示范性的，而且是非限制性的，本申请的范围由所附权利要求而不是上述说明限定，因此旨在将落在权利要求的等同要件的含义和范围内的所有变化涵括在本申请内。不应将权利要求中的任何附图标记视为限制所涉及的权利要求。此外，显然“包括”一词不排除其他单元或步骤，单数不排除复数。装置权利要求中陈述的多个单元或装置也可以由一个单元或装置通过软件或者硬件来实现。

Claims (14)

  1. 一种三轴预调制低噪声磁电阻传感器，包括X轴磁电阻传感器、Y轴电阻传感器和Z轴磁电阻传感器，其特征在于，
    所述X轴磁电阻传感器包括X轴磁电阻传感单元阵列、X轴软磁通量集中器阵列以及X轴调制导线阵列，所述X轴磁电阻传感单元阵列电连接成X轴磁电阻传感电桥，所述X轴调制导线阵列电连接成两端口X轴激励线圈，在测量外磁场时，所述X轴激励线圈用于通过频率为f的高频交流激励电源，X轴磁电阻传感电桥用于输出频率为2f的谐波信号分量，并经解调得到X轴低噪声信号；
    所述Y轴低噪声磁电阻传感器包括Y轴磁电阻传感单元阵列、Y轴软磁通量集中器阵列以及Y轴调制导线阵列，所述Y轴磁电阻传感单元阵列电连接成Y轴磁电阻传感电桥，所述Y轴调制导线阵列电连接成两端口Y轴激励线圈，在测量外磁场时，所述Y轴激励线圈用于通过频率为f的高频交流激励电源，所述Y轴磁电阻传感电桥用于输出频率为2f的谐波信号分量，并经解调得到Y轴低噪声信号；
    所述Z轴低噪声磁电阻传感器包括Z轴磁电阻传感单元阵列、Z轴软磁通量集中器阵列以及Z轴调制导线阵列，所述Z轴磁电阻传感单元阵列电连接成Z轴磁电阻传感电桥，所述Z轴调制导线阵列电连接成两端口Z轴激励线圈，在测量外磁场时，所述Z轴激励线圈用于通过频率为f的高频交流激励电源，所述Z轴磁电阻传感电桥用于输出频率为2f的谐波信号分量，并经解调得到Z轴低噪声信号。
  2. 根据权利要求1所述的一种三轴预调制低噪声磁电阻传感器，其特征在于，所述X轴磁电阻传感单元阵列、Y轴磁电阻传感单元阵列和Z轴磁电阻传感单元阵列具有相同的磁场敏感方向，且构成所述X轴磁电阻传感单元阵列、Y轴磁电阻传感单元阵列和Z轴磁电阻传感单元阵列的磁电阻传感单元的晶圆通过同一磁场退火工艺得到。
  3. 根据权利要求1所述的一种三轴预调制低噪声磁电阻传感器，其特征在于，所述X轴磁电阻传感单元阵列具有+X轴和-X轴磁场敏感方向，所述Y轴磁电阻传感单元阵列具有+Y轴和-Y轴磁场敏感方向，且二者的磁场敏感方向分别通过激光程控扫描加热退火获得，所述Z轴磁电阻传感单元具有X或者Y轴磁场敏感方向。
  4. 根据权利要求1所述的一种三轴预调制低噪声磁电阻传感器，其特征在于，所述X轴磁电阻传感器、Y轴磁电阻传感器分别通过单磁场敏感方向元切片翻转90、180、270度得到。
  5. 根据权利要求1所述的一种三轴预调制低噪声磁电阻传感器，其特征在于，构成所述X轴磁电阻传感单元阵列、Y轴磁电阻传感单元阵列和所述Z轴磁电阻传感单元阵列的磁电阻传感单元为GMR，TMR或者AMR。
  6. 根据权利要求1所述的一种三轴预调制低噪声磁电阻传感器，其特征在于，所述X轴磁电阻传感电桥、Y轴磁电阻传感电桥、Z轴磁电阻传感电桥分别为半桥，全桥或者准桥结构。
  7. 根据权利要求2所述的一种三轴预调制低噪声磁电阻传感器，其特征在于，所述X轴磁电阻传感器为参考桥式X轴磁电阻传感器，所述X轴磁电阻传感单元阵列包括位于所述X轴软磁通量集中器阵列间隙处的X轴敏感磁电阻传感单元串以及位于X轴软磁通量集中器上表面或者下表面Y轴中心线位置的X轴参考磁电阻传感单元串，所述X轴调制导线阵列的X轴调制导线平行于所述Y轴中心线且位于所述X轴软磁通量集中器中，以和所述X轴软通量集中器形成软磁材料层/调制导线层/软磁材料层复合结构，所述软磁材料层和所述调制导线层之间通过绝缘材料层隔离，且相邻两个所述X轴调制导线具有相反电流方向。
  8. 根据权利要求7所述的一种三轴预调制低噪声磁电阻传感器，其特征在于，所述X轴软磁通量集中器阵列包括敏感软磁通量集中器和参考软磁通量集中器，任意两个相邻的所述X轴参考磁电阻传感单元串、任意两个相邻的所述X轴敏感磁电阻传感单元串分别位于所述参考软磁通量集中器、所述敏感软磁通量集中器上表面或者下表面相对于Y轴中心线对称的两个位置处， 所述X轴调制导线分别位于所述参考软磁通量集中器或所述敏感软磁通量集中器中并和其Y轴中心线平行，以形成所述软磁材料层/调制导线层/软磁材料层复合结构。
  9. 根据权利要求2所述的一种三轴预调制低噪声磁电阻传感器，其特征在于，所述X轴磁电阻传感器为具有U型软磁通量集中器的X轴推挽桥式磁电阻传感器，所述X轴软磁通量集中器阵列包括多个U型软磁通量集中器，每个所述U型软磁通量集中器具有两个叉指，所述多个U型软磁通量集中器交错设置使得相邻U型软磁通量集中器之间形成有叉指间隙，所述X轴磁电阻传感单元阵列包括分别交替位于所述U型软磁通量集中器的叉指间隙中的推磁电阻传感单元串和挽磁电阻传感单元串，所述X轴调制导线阵列的调制导线位于所述U形软磁通量集中器的叉指中，以形成软磁材料层/调制导线层/软磁材料层复合结构，所述软磁材料层和所述调制导线层之间通过绝缘材料层隔离，且相邻两个所述调制导线具有相反电流方向。
  10. 根据权利要求2所述的一种三轴预调制低噪声磁电阻传感器，其特征在于，所述X轴磁电阻传感器为H型软磁通量集中器-U型软磁通量集中器混合型X轴推挽桥式磁电阻传感器，所述X轴软磁通量集中器阵列包括H型软磁通量集中器和U型软磁通量集中器，所述H型软磁通量集中器和U型软磁通量集中器分别具有叉指且交错设置以形成叉指间隙，所述X轴推挽桥式磁电阻传感单元阵列包括分别交替位于所述H型软磁通量集中器和U型软磁通量集中器之间的叉指间隙中的推磁电阻传感单元串和挽磁电阻传感单元串，所述X轴调制导线阵列的调制导线位于所述叉指中，以形成软磁材料层/调制导线层/软磁材料层复合结构，所述软磁材料层和所述调制导线层之间通过绝缘材料层隔离，且相邻两个所述调制导线具有相反电流方向。
  11. 根据权利要求2所述的一种三轴预调制低噪声磁电阻传感器，其特征在于，所述Y轴磁电阻传感器为Y轴梳状叉指型推挽桥式磁电阻传感器，所述Y轴软磁通量集中器阵列包括两组相对设置的软磁通量集中器，每组所述软磁通量集中器包括梳座、自所述梳座向另一组软磁通量集中器延伸的叉指，两组软磁通量集中器的叉指交错设置，所述Y轴磁电阻传感单元阵列包括交 替位于所述叉指间隙中的推磁电阻传感单元串和挽磁电阻传感单元串，所述Y轴调制导线阵列的调制导线位于所述叉指中，以形成软磁材料层/调制导线层/软磁材料层复合结构，所述软磁材料层和所述调制导线层之间通过绝缘材料层隔离，且相邻两个所述调制导线具有相反电流方向，所述X轴连接导线位于偏离梳座的区域；或者所述调制导线位于所述梳座中形成软磁材料层/调制导线层/软磁材料层复合结构，且两个梳座中的所述调制导线具有相反电流方向。
  12. 根据权利要求2所述的一种三轴预调制低噪声磁电阻传感器，其特征在于，所述Y轴磁电阻传感器为软磁通量集中器块状阵列型推挽桥式磁电阻传感器，所述Y轴软磁通量集中器阵列包括分别为N行M列和N-1行M列的两个沿Y方向错位排列的软磁通量集中器块阵列一和阵列二，所述Y轴磁电阻传感单元阵列包括交替位于所述磁块阵列一和阵列二之间的间隙处的推磁电阻传感单元和挽磁电阻传感单元，所述Y轴调制导线阵列的调制导线沿着所述软磁通量集中器块阵列一和阵列二的软磁通量集中器块行交替排列，且和所述软磁块形成软磁材料层/调制导线层/软磁材料层复合复合结构，且相邻所述调制导线具有相反电流方向。
  13. 根据权利要求1所述的一种三轴预调制低噪声磁电阻传感器，其特征在于，所述Z轴磁电阻传感器为包含软磁通量集中器阵列的推挽桥式磁电阻传感器，所述Z轴磁电阻传感单元阵列包括推磁电阻传感单元串和挽磁电阻传感单元串，所述推磁电阻传感单元串和挽磁电阻传感单元串位于所述软磁通量集中器的上表面或者下表面且相对于Y轴中心线对称的两位置，所述Z轴调制导线阵列的调制导线位于所述软磁通量集中器中形成软磁材料层/调制导线/软磁材料层的复合结构，相邻两所述调制导线具有相反电流方向。
  14. 根据权利要求1所述的一种三轴预调制低噪声磁电阻传感器，其特征在于，所述X轴磁电阻传感器和Y轴磁电阻传感器均为一种多层结构预调制低噪声磁电阻传感器，所述X轴软磁通量集中器包括多个间隔设置的X轴软磁通量集中器，所述Y轴软磁通量集中器包括多个间隔设置的Y轴软磁通量集中器，所述X轴磁电阻传感单元阵列包括分别位于所述X轴软磁通量集中器 间隙处的X推磁电阻传感单元串和X挽磁电阻传感单元串，所述Y轴磁电阻传感单元阵列包括分别位于所述Y轴软磁通量集中器间隙处的Y推磁电阻传感单元串和Y挽磁电阻传感单元串。
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