WO2019148596A1 - 一种oled显示面板及其制作方法 - Google Patents

一种oled显示面板及其制作方法 Download PDF

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WO2019148596A1
WO2019148596A1 PCT/CN2018/078852 CN2018078852W WO2019148596A1 WO 2019148596 A1 WO2019148596 A1 WO 2019148596A1 CN 2018078852 W CN2018078852 W CN 2018078852W WO 2019148596 A1 WO2019148596 A1 WO 2019148596A1
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Prior art keywords
groove
flexible substrate
cathode
photoresist
tft layer
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French (fr)
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张明
杨杰
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/023,419 priority Critical patent/US10566555B2/en
Publication of WO2019148596A1 publication Critical patent/WO2019148596A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to the field of screen display technologies, and in particular, to an OLED display panel and a method of fabricating the same.
  • OLEDs Organic light-emitting diodes
  • TFE Thin Film Encapsulation
  • the process of the flexible OLED is: array segment (Array) ⁇ OLED evaporation ⁇ TFE, as shown in FIG. 1 , wherein in the OLED evaporation (Evaparation), the cathode 10′ is mostly made of metal such as Mg:Ag. Steam formation, the particles 12' are easily formed by peeling of Mg:Ag film during the evaporation process, and the portion of the particles 12' is generated at the boundary of the cathode mask 11' and the panel. (outline).
  • the inorganic layer is mainly used to block water and oxygen and the organic layer is planarized, and the inorganic layer and the organic layer are laminated.
  • the position is concentrated on the edge of the panel, which has a significant effect on the packaging effect, which reduces the reliability of the package.
  • the technical problem to be solved by the present invention is to provide an OLED display panel capable of improving package reliability and a manufacturing method thereof.
  • an OLED display panel including:
  • the flexible substrate is provided with a first groove at a position outside the boundary of the cathode, and the TFT layer is provided with a second groove at a position corresponding to the first groove, and the second groove is used for the second groove.
  • the method further includes a package film formed on the TFT layer, the organic light-emitting layer, and the cathode, wherein the first groove and the second groove are located at a boundary of the package film on the flexible substrate
  • the projection on the top is between the projection of the cathode and the projection on the flexible substrate.
  • the projection of the second groove on the flexible substrate coincides with the first groove.
  • first groove is an annular groove surrounding the cathode.
  • the depth of the first groove and the second groove is 1/3 to 2/3 of the thickness of the flexible substrate.
  • the flexible substrate has a thickness of 1 to 50 micrometers.
  • width of the first groove and the second groove is greater than 10 microns.
  • the invention also provides a method for manufacturing an OLED display panel, comprising:
  • the forming the first groove on the predetermined position on the flexible substrate specifically includes:
  • the plurality of the first photoresist regions and the plurality of the second photoresist regions arranged at the interval are used as a mask, and the flexible substrate is etched and etched at a position corresponding to the photoresist spacers. Forming the first groove.
  • the manufacturing method further includes:
  • the beneficial effects of the embodiments of the present invention are: by fabricating a first groove on a thicker flexible substrate at a position other than the boundary of the cathode, and then preparing the TFT layer on the flexible substrate with the first groove, the TFT layer Correspondingly, a second groove is formed at a position corresponding to the first groove, so that particles generated when the cathode is vapor-deposited can be collected in the second groove, thereby avoiding influence on the package and improving the reliability of the flexible package.
  • FIG. 1 is a schematic view showing generation of particles when a conventional OLED display panel is vapor-deposited.
  • FIG. 2 is a schematic structural view of an OLED display panel according to an embodiment of the present invention.
  • FIG. 8 are schematic diagrams showing a manufacturing process of an OLED display panel according to an embodiment of the present invention.
  • FIG. 9 is a schematic flow chart of a method for fabricating an OLED display panel according to Embodiment 2 of the present invention.
  • an embodiment of the present invention provides an OLED display panel, including:
  • the flexible substrate 2 is provided with a first recess 20 at a position other than the boundary 41 of the cathode 4, and the TFT layer is provided with a second recess 30 at a position corresponding to the first recess 20,
  • the second groove 30 is for collecting the particles 40 generated when the cathode 4 is vapor-deposited.
  • the solution adopted in the present invention is to provide a groove structure for collecting the particles 40.
  • the film layer of the flexible substrate 2 such as polyimide PI
  • the TFT layer 3 is prepared on the flexible substrate 2 with the first recess 20, the TFT layer 3 is corresponding The position of the first groove 20 correspondingly forms the second groove 30; thus, when the cathode 4 is vapor-deposited thereafter, the generated particles 40 can be collected in the second groove 30, thereby avoiding influence on the package, and also The edge of the mask of the cathode 4 is prevented from coming into direct contact with the TFT layer 3.
  • the position of the second groove 30 corresponding to the first groove 20 means that the projection of the second groove 30 on the flexible substrate 2 coincides with the first groove 20 .
  • FIG. 3 to FIG. 8 is a schematic diagram of a manufacturing process of the OLED display panel of the present embodiment.
  • a polymer substrate such as polyimide PI or the like is coated on the cleaned carrier substrate 1 to form a flexible substrate 2 having a thickness of 1 to 50 ⁇ m.
  • a photoresist material is coated on the flexible substrate 2 to form a photoresist layer 6.
  • FIG. 3 is a schematic diagram of a manufacturing process of the OLED display panel of the present embodiment.
  • the photoresist layer 6 is patterned by an exposure and development process to form a plurality of first photoresist regions 61 and a plurality of second photoresist regions 62 arranged in a spaced, first photoresist region 61 and A photoresist spacer groove 60 is formed between the second photoresist regions 62, wherein the width of the first photoresist region 61 is greater than the width of the second photoresist region 62.
  • the flexible substrate 2 is etched at a position corresponding to the photoresist spacer 60 by using the plurality of first photoresist regions 61 and the plurality of second photoresist regions 62 arranged at intervals as a mask. Etching forms the first recess 20.
  • the first photoresist region 61 corresponding to the cathode to be vapor-deposited may be formed according to the position of the cathode to be evaporated, so as shown in FIG.
  • a first region 21 corresponding to the cathode to be vapor-deposited and a first recess 20 located outside the first region 21 are formed on the flexible substrate 2, and the boundary of the first region 21 is the cathode to be vapor-deposited. boundary.
  • a plan view of the flexible substrate 2 with the first groove 20 at this time is shown in FIG. 7, and the first groove 20 is an annular groove formed around the first region 21.
  • the remaining TFT process is continued on the flexible substrate 2 in which the structure of the first recess 20 has been completed.
  • the TFT layer 3 is formed on the flexible substrate 2 in a usual process, and an organic layer is formed on the TFT layer 3.
  • the light-emitting layer 5 is formed into a structure as shown in FIG. Due to the presence of the first recess 20, the TFT layer 3 will form the second recess 30 at a position corresponding to the first recess 20, so that the second recess 30 can collect the generated particles 40 upon subsequent vapor deposition of the cathode.
  • the second groove 30 has a width which is also larger than 10 ⁇ m and a depth of 1/3 to 2/3 of the thickness of the flexible substrate 2 except for the position corresponding to the first groove 20.
  • a package film is formed on the TFT layer 3, the organic light-emitting layer 5, and the cathode 4. Further, as shown in FIG. 2, the first groove 20 and the second groove 30 are located on the flexible substrate 2 at the boundary 71 of the package film. Between the projection of the boundary 41 of the cathode 4 on the flexible substrate 2, it is ensured that the encapsulating film can cover the second recess 30 of the particles 40 which are generated when the vapor-deposited cathode 4 is collected.
  • an OLED display panel corresponding to the first embodiment of the present invention, the second embodiment of the present invention further provides a manufacturing method thereof, including:
  • a polymer substrate such as polyimide PI or the like is first coated on the cleaned carrier substrate 1 to form a flexible substrate 2 having a thickness of 1-50. Micron. Then, a photoresist material is coated on the flexible substrate 2 to form a photoresist layer 6, and the photoresist layer 6 is patterned by an exposure and development process to form a plurality of first photoresist regions 61 and a plurality of second photoresist layers arranged at intervals.
  • a photoresist spacer 60 is formed between the first photoresist region 61 and the second photoresist region 62, wherein the width of the first photoresist region 61 is greater than the width of the second photoresist region 62. Then, the plurality of first photoresist regions 61 and the plurality of second photoresist regions 62 arranged at intervals are used as masks to etch the flexible substrate 2, and the first recess is formed at a position corresponding to the photoresist spacers 60. Slot 20.
  • the first photoresist region 61 corresponding to the cathode to be vapor-deposited may be formed according to the position of the cathode to be evaporated, so as shown in FIG.
  • a first region 21 corresponding to the cathode to be vapor-deposited and a first recess 20 located outside the first region 21 are formed on the flexible substrate 2, and the boundary of the first region 21 is the cathode to be vapor-deposited. boundary.
  • the remaining TFT process is continued on the flexible substrate 2 on which the structure of the first recess 20 has been completed.
  • the TFT layer 3 is formed on the flexible substrate 2 in a usual process, and the organic light-emitting layer 5 is formed on the TFT layer 3 to form, for example, The structure shown in Figure 2. Due to the presence of the first recess 20, the TFT layer 3 will form the second recess 30 at a position corresponding to the first recess 20, so that the second recess 30 can collect the generated particles 40 upon subsequent vapor deposition of the cathode. It should be noted that the position of the second groove 30 corresponding to the first groove 20 means that the projection of the second groove 30 on the flexible substrate 2 coincides with the first groove 20 .
  • a package film is formed on the TFT layer 3, the organic light-emitting layer 5, and the cathode 4. Further, as shown in FIG. 2, the first groove 20 and the second groove 30 are located on the flexible substrate 2 at the boundary 71 of the package film. The projection is between the projection 41 of the cathode 4 and the projection on the flexible substrate 2, which ensures that the encapsulation film can cover the second recess 30 of the particles 40 which are generated when the vapor-deposited cathode 4 is collected.
  • the beneficial effects of the embodiments of the present invention are: preparing the first recess by making a position on the thick flexible substrate at a position other than the boundary of the cathode, and then preparing the TFT on the flexible substrate with the first recess.
  • the TFT layer correspondingly forms a second groove at a position corresponding to the first groove, so that particles generated during vapor deposition of the cathode can be collected in the second groove, thereby avoiding influence on the package and improving reliability of the flexible package.

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Abstract

本发明提供一种OLED显示面板及其制作方法，其中，OLED显示面板包括：承载基板；形成在承载基板上的柔性基板；形成在柔性基板上的TFT层；形成在TFT层上的有机发光层；形成在TFT层与有机发光层上的阴极；柔性基板在对应阴极的边界之外的位置设有第一凹槽，TFT层在对应第一凹槽的位置设有第二凹槽，第二凹槽用于收集在蒸镀阴极时产生的微粒。本发明通过在较厚的柔性基板上对应阴极的边界之外的位置制作第一凹槽，然后在带有第一凹槽的柔性基板上制备TFT层时，TFT层在对应第一凹槽的位置相应形成第二凹槽，使得在蒸镀阴极时产生的微粒可被收集在第二凹槽内，避免对封装造成影响，提高柔性封装可靠性。

Description

一种OLED显示面板及其制作方法
本申请要求于2018年1月30日提交中国专利局、申请号为201810088923.5、发明名称为“一种OLED显示面板及其制作方法”的中国专利申请的优先权，上述专利的全部内容通过引用结合在本申请中。
技术领域
本发明涉及屏幕显示技术领域，尤其涉及一种OLED显示面板及其制作方法。
背景技术
有机发光二极管(OLED)具有自发光、高对比、广视角、低功耗、可弯折等优点受到了大众和研发者的喜爱。柔性OLED也因为其可挠曲，轻薄的特点逐渐占领市场。柔性OLED相应必须采用薄膜封装(Thin film encapsulation，TFE)。影响柔性封装效果的因素很多，除了封装薄膜自身的膜质、厚度、边框(border)外，尤其对于微粒(particle)敏感。
目前进行柔性OLED的流程为：阵列段(Array)→OLED蒸镀→TFE，如图1所示，其中在OLED蒸镀(Evaparation)中其阴极(cathode)10′多采用Mg：Ag等金属共蒸形成，蒸镀制程中很容易因Mg：Ag薄膜剥离(peeling)产生微粒12′，同时此部分微粒12′多产生在阴极掩膜板(cathode mask)11′与面板(panel)接触的边界(outline)。
TFE中主要依靠无机层阻隔水氧及有机层平坦化，透过无机层与有机层的层层压迭而成。对于蒸镀阴极过程中产生的微粒，因其位置集中在面板边缘，对封装效果影响尤其明显，降低了封装可靠性。
发明内容
本发明所要解决的技术问题在于，提供一种可提高封装可靠性的OLED显示面板及其制作方法。
为了解决上述技术问题，本发明提供一种OLED显示面板，包括：
承载基板；
形成在所述承载基板上的柔性基板；
形成在所述柔性基板上的TFT层；
形成在所述TFT层上的有机发光层；
形成在所述TFT层与所述有机发光层上的阴极；
所述柔性基板在对应所述阴极的边界之外的位置设有第一凹槽，所述TFT层在对应所述第一凹槽的位置设有第二凹槽，所述第二凹槽用于收集在蒸镀所述阴极时产生的微粒。
其中，还包括形成在所述TFT层、所述有机发光层和所述阴极上的封装薄膜，所述第一凹槽和所述第二凹槽位于所述封装薄膜的边界在所述柔性基板上的投影与所述阴极的边界在所述柔性基板上的投影之间。
其中，所述第二凹槽在所述柔性基板上的投影与所述第一凹槽重合。
其中，所述第一凹槽为围绕所述阴极的环状凹槽。
其中，所述第一凹槽和所述第二凹槽的深度为所述柔性基板厚度的1/3～2/3。
其中，所述柔性基板厚度为1～50微米。
其中，所述第一凹槽和所述第二凹槽的宽度大于10微米。
本发明还提供一种OLED显示面板的制作方法，包括：
提供承载基板；
在所述承载基板上形成柔性基板，并在所述柔性基板上的预定位置形成第一凹槽；
在所述柔性基板上制作TFT层，并在所述TFT层上对应所述第一凹槽的位置形成第二凹槽；
在所述TFT层上制作有机发光层；
在所述TFT层与所述有机发光层上蒸镀阴极，通过所述第二凹槽收集在蒸镀所述阴极时产生的微粒，所述第一凹槽和所述第二凹槽位于所述阴极的边界之外。
其中，所述在所述柔性基板上的预定位置形成第一凹槽具体包括：
在所述柔性基板上涂布光阻材料形成光阻层；
对所述光阻层采用曝光显影工艺进行图案化处理，形成间隔排列的多个 第一光阻区域和多个第二光阻区域，所述第一光阻区域与所述第二光阻区域之间形成光阻间隔槽；
以所述间隔排列的多个所述第一光阻区域和多个所述第二光阻区域为掩模，对所述柔性基板进行刻蚀，在对应所述光阻间隔槽的位置刻蚀形成所述第一凹槽。
其中，所述制作方法还包括：
在所述TFT层、所述有机发光层和所述阴极上形成封装薄膜，所述第一凹槽和所述第二凹槽位于所述封装薄膜的边界在所述柔性基板上的投影与所述阴极的边界在所述柔性基板上的投影之间。
本发明实施例的有益效果在于：通过在较厚的柔性基板上对应阴极的边界之外的位置制作第一凹槽，然后在带有第一凹槽的柔性基板上制备TFT层时，TFT层在对应第一凹槽的位置相应形成第二凹槽，使得在蒸镀阴极时产生的微粒可被收集在第二凹槽内，避免对封装造成影响，提高柔性封装可靠性。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是现有OLED显示面板蒸镀阴极时产生微粒的示意图。
图2是本发明实施例一一种OLED显示面板的结构示意图。
图3-图8是本发明实施例一一种OLED显示面板的制作流程示意图。
图9是本发明实施例二一种OLED显示面板的制作方法的流程示意图。
具体实施方式
以下各实施例的说明是参考附图，用以示例本发明可以用以实施的特定实施例。
请参照图2所示，本发明实施例一提供一种OLED显示面板，包括：
承载基板1；
形成在所述承载基板1上的柔性基板2；
形成在所述柔性基板2上的TFT层3；
形成在所述TFT层3上的有机发光层5；
形成在所述TFT层3与所述有机发光层5上的阴极4；
所述柔性基板2在对应所述阴极4的边界41之外的位置设有第一凹槽20，所述TFT层在对应所述第一凹槽20的位置设有第二凹槽30，所述第二凹槽30用于收集在蒸镀所述阴极4时产生的微粒40。
本发明实施例为避免蒸镀阴极4时产生的微粒40影响封装的可靠性，采取的解决手段是设置用于收集该些微粒40的凹槽结构。考虑到柔性基板2的膜层(如聚酰亚胺PI)较厚，用来制作具有一定深度的凹槽最为合适，因此，首先在制作柔性基板2的过程中，增加制作第一凹槽20的流程，使得柔性基板2在对应阴极4的边界41之外的位置形成第一凹槽20；然后在带有第一凹槽20的柔性基板2上制备TFT层3时，TFT层3在对应第一凹槽20的位置相应形成第二凹槽30；这样，在其后蒸镀阴极4时，产生的微粒40即可被收集在第二凹槽30内，避免对封装造成影响，同时还防止了阴极4的掩模板边缘与TFT层3直接接触。需要说明的是，第二凹槽30的位置与第一凹槽20的对应，是指第二凹槽30在柔性基板2上的投影与第一凹槽20重合。
具体地，请结合图3-图8所示，为本实施例OLED显示面板的制作流程示意图。首先请参照图3，在经过清洗的承载基板1上涂布高分子聚合物，如聚酰亚胺PI等，形成柔性基板2，柔性基板2厚度为1-50微米。然后如图4所示，在柔性基板2上涂布光阻材料形成光阻层6。再如图5所示，对光阻层6采用曝光显影工艺进行图案化处理，形成间隔排列的多个第一光阻区域61和多个第二光阻区域62，第一光阻区域61与第二光阻区域62之间形成光阻间隔槽60，其中，第一光阻区域61的宽度大于第二光阻区域62的宽度。接着参照图6所示，以上述间隔排列的多个第一光阻区域61和多个第二光阻区域62为掩模，对柔性基板2进行刻蚀，在对应光阻间隔槽60的位置刻蚀形成第一凹槽20。需要说明的是，在对光阻层6采用曝光显影工艺进行图案化处理时，可以根据待蒸镀阴极的位置，形成对应待蒸镀阴极的第一光阻区域61，这样在图6所示的刻蚀过程中，在柔性基板2上将形成对 应待蒸镀阴极的第一区域21，以及位于第一区域21外侧的第一凹槽20，第一区域21的边界即待蒸镀阴极的边界。此时带有第一凹槽20的柔性基板2的平面视图如图7所示，第一凹槽20为围绕第一区域21形成的环状凹槽。第一凹槽20的宽度大于10微米，其深度a为柔性基板2厚度b的1/3～2/3，即a＝(1/3～2/3)b。
再如图8所示，在已完成第一凹槽20结构的柔性基板2上继续剩余的TFT制程，具体地，按通常工艺在柔性基板2上形成TFT层3、在TFT层3上形成有机发光层5，形成如图2所示的结构。由于第一凹槽20的存在，使得TFT层3在对应第一凹槽20的位置将形成第二凹槽30，这样在后续蒸镀阴极时，第二凹槽30可以收集产生的微粒40。第二凹槽30除了位置与第一凹槽20相对应之外，第二凹槽30的宽度同样大于10微米，深度为柔性基板2厚度的1/3～2/3。
在TFT层3、有机发光层5和阴极4上形成封装薄膜，进一步地，如图2所示，第一凹槽20和第二凹槽30位于封装薄膜的边界71在柔性基板2上的投影与阴极4的边界41在柔性基板2上的投影之间，这样可以保证封装薄膜能够覆盖到收集有蒸镀阴极4时产生的微粒40的第二凹槽30。
请参照图9所示，相应于本发明实施例一的OLED显示面板，本发明实施例二还提供其制作方法，包括：
提供承载基板；
在所述承载基板上形成柔性基板，并在所述柔性基板上的预定位置形成第一凹槽；
在所述柔性基板上制作TFT层，并在所述TFT层上对应所述第一凹槽的位置形成第二凹槽；
在所述TFT层上制作有机发光层；
在所述TFT层与所述有机发光层上蒸镀阴极，通过所述第二凹槽收集在蒸镀所述阴极时产生的微粒，所述第一凹槽和所述第二凹槽位于所述阴极的边界之外。
具体地，分别如图3-图8所示，首先在经过清洗的承载基板1上涂布高分子聚合物，如聚酰亚胺PI等，形成柔性基板2，柔性基板2厚度为1-50 微米。然后在柔性基板2上涂布光阻材料形成光阻层6，对光阻层6采用曝光显影工艺进行图案化处理，形成间隔排列的多个第一光阻区域61和多个第二光阻区域62，第一光阻区域61与第二光阻区域62之间形成光阻间隔槽60，其中，第一光阻区域61的宽度大于第二光阻区域62的宽度。接着以上述间隔排列的多个第一光阻区域61和多个第二光阻区域62为掩模，对柔性基板2进行刻蚀，在对应光阻间隔槽60的位置刻蚀形成第一凹槽20。需要说明的是，在对光阻层6采用曝光显影工艺进行图案化处理时，可以根据待蒸镀阴极的位置，形成对应待蒸镀阴极的第一光阻区域61，这样在图6所示的刻蚀过程中，在柔性基板2上将形成对应待蒸镀阴极的第一区域21，以及位于第一区域21外侧的第一凹槽20，第一区域21的边界即待蒸镀阴极的边界。
接着在已完成第一凹槽20结构的柔性基板2上继续剩余的TFT制程，具体地，按通常工艺在柔性基板2上形成TFT层3、在TFT层3上形成有机发光层5，形成如图2所示的结构。由于第一凹槽20的存在，使得TFT层3在对应第一凹槽20的位置将形成第二凹槽30，这样在后续蒸镀阴极时，第二凹槽30可以收集产生的微粒40。需要说明的是，第二凹槽30的位置与第一凹槽20的对应，是指第二凹槽30在柔性基板2上的投影与第一凹槽20重合。
然后在TFT层3、有机发光层5和阴极4上形成封装薄膜，进一步地，如图2所示，第一凹槽20和第二凹槽30位于封装薄膜的边界71在柔性基板2上的投影与阴极4的边界41在柔性基板2上的投影之间，这样可以保证封装薄膜能够覆盖到收集有蒸镀阴极4时产生的微粒40的第二凹槽30。
通过上述说明可知，本发明实施例的有益效果在于：通过在较厚的柔性基板上对应阴极的边界之外的位置制作第一凹槽，然后在带有第一凹槽的柔性基板上制备TFT层时，TFT层在对应第一凹槽的位置相应形成第二凹槽，使得在蒸镀阴极时产生的微粒可被收集在第二凹槽内，避免对封装造成影响，提高柔性封装可靠性。
以上所揭露的仅为本发明较佳实施例而已，当然不能以此来限定本发明之权利范围，因此依本发明权利要求所作的等同变化，仍属本发明所涵盖的 范围。

Claims (10)

  1. 一种OLED显示面板，其中，包括：
    承载基板；
    形成在所述承载基板上的柔性基板；
    形成在所述柔性基板上的TFT层；
    形成在所述TFT层上的有机发光层；
    形成在所述TFT层与所述有机发光层上的阴极；
    所述柔性基板在对应所述阴极的边界之外的位置设有第一凹槽，所述TFT层在对应所述第一凹槽的位置设有第二凹槽，所述第二凹槽用于收集在蒸镀所述阴极时产生的微粒。
  2. 根据权利要求1所述的OLED显示面板，其中，还包括形成在所述TFT层、所述有机发光层和所述阴极上的封装薄膜，所述第一凹槽和所述第二凹槽位于所述封装薄膜的边界在所述柔性基板上的投影与所述阴极的边界在所述柔性基板上的投影之间。
  3. 根据权利要求1所述的OLED显示面板，其中，所述第二凹槽在所述柔性基板上的投影与所述第一凹槽重合。
  4. 根据权利要求1所述的OLED显示面板，其中，所述第一凹槽为围绕所述阴极的环状凹槽。
  5. 根据权利要求1所述的OLED显示面板，其中，所述第一凹槽和所述第二凹槽的深度为所述柔性基板厚度的1/3～2/3。
  6. 根据权利要求5所述的OLED显示面板，其中，所述柔性基板厚度为1～50微米。
  7. 根据权利要求5所述的OLED显示面板，其中，所述第一凹槽和所述第二凹槽的宽度大于10微米。
  8. 一种OLED显示面板的制作方法，包括：
    提供承载基板；
    在所述承载基板上形成柔性基板，并在所述柔性基板上的预定位置形成第一凹槽；
    在所述柔性基板上制作TFT层，并在所述TFT层上对应所述第一凹槽 的位置形成第二凹槽；
    在所述TFT层上制作有机发光层；
    在所述TFT层与所述有机发光层上蒸镀阴极，通过所述第二凹槽收集在蒸镀所述阴极时产生的微粒，所述第一凹槽和所述第二凹槽位于所述阴极的边界之外。
  9. 根据权利要求8所述的制作方法，其中，所述在所述柔性基板上的预定位置形成第一凹槽具体包括：
    在所述柔性基板上涂布光阻材料形成光阻层；
    对所述光阻层采用曝光显影工艺进行图案化处理，形成间隔排列的多个第一光阻区域和多个第二光阻区域，所述第一光阻区域与所述第二光阻区域之间形成光阻间隔槽；
    以所述间隔排列的多个所述第一光阻区域和多个所述第二光阻区域为掩模，对所述柔性基板进行刻蚀，在对应所述光阻间隔槽的位置刻蚀形成所述第一凹槽。
  10. 根据权利要求8所述的制作方法，其中，还包括：
    在所述TFT层、所述有机发光层和所述阴极上形成封装薄膜，所述第一凹槽和所述第二凹槽位于所述封装薄膜的边界在所述柔性基板上的投影与所述阴极的边界在所述柔性基板上的投影之间。
PCT/CN2018/078852 2018-01-30 2018-03-13 一种oled显示面板及其制作方法 Ceased WO2019148596A1 (zh)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8350467B2 (en) * 2006-01-11 2013-01-08 Samsung Display Co., Ltd. Flat panel display device and method thereof
CN203746831U (zh) * 2014-03-03 2014-07-30 京东方科技集团股份有限公司 一种柔性显示器
CN104952904A (zh) * 2014-03-27 2015-09-30 环球展览公司 有机发光装置及其制备方法
CN105789242A (zh) * 2014-12-23 2016-07-20 深圳Tcl工业研究院有限公司 高温tft复合柔性基板和制备方法及柔性显示器件制备方法

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CN107146810A (zh) * 2017-06-19 2017-09-08 合肥市惠科精密模具有限公司 一种柔性amoled显示面板

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8350467B2 (en) * 2006-01-11 2013-01-08 Samsung Display Co., Ltd. Flat panel display device and method thereof
CN203746831U (zh) * 2014-03-03 2014-07-30 京东方科技集团股份有限公司 一种柔性显示器
CN104952904A (zh) * 2014-03-27 2015-09-30 环球展览公司 有机发光装置及其制备方法
CN105789242A (zh) * 2014-12-23 2016-07-20 深圳Tcl工业研究院有限公司 高温tft复合柔性基板和制备方法及柔性显示器件制备方法

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