WO2019148570A1 - 蒸镀设备及蒸镀方法 - Google Patents

蒸镀设备及蒸镀方法 Download PDF

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WO2019148570A1
WO2019148570A1 PCT/CN2018/077576 CN2018077576W WO2019148570A1 WO 2019148570 A1 WO2019148570 A1 WO 2019148570A1 CN 2018077576 W CN2018077576 W CN 2018077576W WO 2019148570 A1 WO2019148570 A1 WO 2019148570A1
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Prior art keywords
electric field
evaporation
vapor deposition
charged
anode layer
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English (en)
French (fr)
Inventor
易国霞
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US15/771,355 priority Critical patent/US10541386B2/en
Publication of WO2019148570A1 publication Critical patent/WO2019148570A1/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present invention relates to the field of organic light-emitting display technology, and in particular to an evaporation device and a vapor deposition method for depositing an organic light-emitting layer on an array substrate.
  • OLED display panels have the advantages of self-luminous, thin thickness, wide viewing angle and fast response speed. They are representative of the new generation of flat display technology and are increasingly praised by the industry.
  • the basic structure of the OLED display panel includes an anode layer, an organic light-emitting layer, and a cathode layer.
  • an organic light-emitting layer for example, an evaporation film formation method, a molecular beam epitaxy method, and an organic chemistry method.
  • Vapor deposition method, etc. Since the vapor deposition film forming method has the advantages of simple operation, easy control of the film thickness, and low contamination of the film, the prior art mostly uses an evaporation film forming method to form an organic light emitting layer, that is, in a vacuum environment, the vapor deposition material is used. Heating is performed to evaporate, and deposition onto a target substrate (array substrate) to form an organic light-emitting layer.
  • each pixel unit in the panel can display different colors.
  • the OLED mainly uses red, green and blue light-emitting layers to respectively form red sub-pixels.
  • the green sub-pixel and the blue sub-pixel, and the light-emitting layers of the sub-pixels of different colors are required to be vapor-deposited separately due to different materials, different target regions and patterns of vapor deposition.
  • the high-precision metal mask (FMM) is mainly used for vapor deposition, and the red, green and blue organic light-emitting materials are plated side by side on the OLED panel.
  • FMM high-precision metal mask
  • the vapor deposition material particles generated by vaporization of the vapor deposition source have no specific directivity in the process of diffusing to the target substrate, and when the red, green, and blue organic light-emitting materials are sequentially evaporated, Although a mask barrier is provided, there is a certain distance between the mask and the target substrate, and it is possible that the vapor deposition material particles are deposited outside the target region, causing a problem of color mixing of the OLED panel.
  • the present invention provides an evaporation device and an evaporation method for vapor-depositing an organic light-emitting layer on an array substrate, which can prevent deposition of particles of the evaporation material outside the target region and reduce the OLED.
  • the problem of color mixing on the panel is a problem of color mixing on the panel.
  • An evaporation device for vapor-depositing an organic light-emitting layer on an array substrate on which an anode layer is formed wherein the evaporation device comprises:
  • the first base is provided with an electrode plate
  • a second base station disposed opposite the first base station for carrying the array substrate
  • An evaporation unit disposed on the electrode plate for generating charged vapor deposition material particles and spraying the charged evaporation material particles toward the array substrate;
  • a mask carrier for fixing a mask having an opening pattern between the array substrate and the evaporation unit
  • An electric field forming unit electrically connected to the array substrate and the electrode plate for forming an electric field between the anode layer and the electrode plate, the electric field guiding the charged vapor deposition material particles to the array A substrate is deposited to form an organic light emitting layer corresponding to the opening pattern.
  • the evaporation unit comprises a crucible and a nozzle, the nozzle is open toward the second base, and the crucible is used for heating the evaporation material to vaporize the evaporation material to form particles of the evaporation material, the steaming Plating material particles are ejected from the nozzle and rubbed against the nozzle to form the charged evaporating material particles.
  • the nozzle has an opening width of 5 to 15 mm, and the vapor deposition material particles have a particle diameter of 0.1 to 1 nm.
  • the electric field forming unit applies a first voltage to the anode layer through the array substrate, the electric field forming unit applies a second voltage to the electrode plate, the first voltage and the second voltage are not equal An electric field is formed between the anode layer and the electrode plate.
  • the electric field forming unit controls a magnitude relationship between the first voltage and the second voltage according to the charged polarity of the charged vapor deposition material particles to adjust a direction of the electric field; wherein, when The electrification of the charged vapor-deposited material particles is positive polarity, and the electric field forming unit controls the second voltage to be greater than the first voltage; when the charged electrodeposited particles have a negative polarity, The electric field forming unit then controls the second voltage to be less than the first voltage.
  • the array substrate is provided with a pixel circuit and a signal input end, the anode layer and the pixel circuit are electrically connected, the electric field forming unit is connected to the signal input end through a probe, and then passes through the pixel circuit A first voltage is applied to the anode layer.
  • the vapor deposition apparatus further includes: a film thickness monitoring unit, wherein the film thickness monitoring unit obtains a film thickness of the organic light emitting layer by detecting a deposition rate of the charged vapor deposition material particles.
  • the present invention provides an evaporation method for vapor-depositing an organic light-emitting layer on an array substrate on which an anode layer is formed, wherein the evaporation method includes the steps of:
  • the organic light emitting layer comprises a red organic light emitting layer formed on the first anode layer, a green organic light emitting layer formed on the second anode layer, and a blue organic light emitting layer formed on the third anode layer;
  • the opening pattern of the mask is opposite to the first anode layer, the electric field forming unit is such that only between the first anode layer and the electrode plate Forming an electric field;
  • the opening pattern of the mask is opposite to the second anode layer, the electric field forming unit is such that only between the second anode layer and the electrode plate Forming an electric field;
  • the opening pattern of the mask is opposite to the third anode layer, and the electric field forming unit is formed only between the third anode layer and the electrode plate electric field.
  • the vapor deposition method further comprises: obtaining a film thickness of the organic light-emitting layer in real time by detecting a deposition rate of the charged vapor-deposited material particles.
  • the evaporation unit when the organic light emitting layer is evaporated on the array substrate, first, the evaporation unit generates charged vapor deposition material particles to be sprayed toward the target array substrate, and then applies an electric field to electrify the evaporation.
  • the material particles are directed to the array substrate, whereby the charged vapor-deposited material particles are deposited in a predetermined target area in a direction perpendicular to the array substrate after passing through the opening pattern of the mask, which can not only prevent deposition of vapor deposition material particles in the target area.
  • the problem of color mixing of the OLED panel is reduced, and the loss of the vapor deposition material particles due to non-directional diffusion deposition can be reduced, the utilization of the vapor deposition material can be improved, and the cost can be reduced.
  • FIG. 1 is a schematic structural view of an evaporation apparatus according to an embodiment of the present invention.
  • FIGS. 2a-2c are structural diagrams corresponding to respective process steps in the vapor deposition method provided by the embodiment of the present invention.
  • the embodiment provides an evaporation apparatus.
  • the evaporation apparatus includes a first base 1, a second base 3, an evaporation unit 4, a mask carrier 9, and an electric field forming unit 6.
  • the vapor deposition apparatus is for vapor-depositing the organic light-emitting layer 12 on the array substrate 10 on which the anode layer 11 is formed.
  • the array substrate 10 is an array substrate applied in an OLED panel.
  • the array substrate 10 is provided with a pixel circuit (not shown) and a signal input terminal 13.
  • the anode layer 11 is formed in the array. On the substrate 10, the anode layer 11 is electrically connected to the pixel circuit.
  • the first base 1, the second base 3, the evaporation unit 4, and the reticle carrier 9 are generally disposed in a vacuum chamber (not shown).
  • the electric field forming unit 6 may be disposed in the vacuum chamber or may be disposed outside the vacuum chamber.
  • the first base station 1 and the second base station 3 are oppositely disposed, and the first base station 1 is provided with an electrode plate 2.
  • the second base 3 is disposed above the first base 1 for supporting and fixing the array substrate 10 .
  • the evaporation unit 4 is disposed on the electrode plate 2 for generating charged evaporation material particles 20 and ejecting the charged evaporation material particles 20 toward the array substrate 10.
  • the mask carrier 9 is for fixing a mask 5 having an opening pattern 51 between the array substrate 10 and the evaporation unit 4.
  • the electric field forming unit 6 is electrically connected to the array substrate 10 and the electrode plate 2, respectively, for forming an electric field E between the anode layer 11 and the electrode plate 2, and the electric field E charges the electric field
  • the vapor deposition material particles 20 are guided to the array substrate 10 in a direction perpendicular to the array substrate, and the charged evaporation material particles 20 are deposited on the array substrate 10 through the opening pattern 51 to form The organic light-emitting layer 12 corresponding to the opening pattern 51.
  • the evaporation unit 4 includes a crucible 41 and a nozzle 42 that opens toward the second base 3, and the crucible 41 is used to heat the evaporation material 30 to
  • the vapor deposition material 30 is vaporized to form vapor deposition material particles 40 which are ejected from the nozzles 42 and rubbed against the nozzles 42 to form the charged vapor deposition material particles 20.
  • the evaporation material 30 is an organic light-emitting material, and it is necessary to select a specific material according to the organic light-emitting layer 12 to be formed.
  • the opening width of the nozzle 42 may be set in a range of 5 to 15 mm, and the particle diameter of the vapor deposition material particles may be 0.1 to 1 nm.
  • the vapor deposition material particles 40 are ejected from the nozzle 42 and rubbed against the nozzle 42 to be charged.
  • the principle can be referred to the Millikan oil drop test. Specifically, it is necessary to set a specific size of the opening width of the nozzle 42 according to the specific particle size of the vapor deposition material particles 40 formed by vaporization of the selected evaporation material 30 to ensure that the vapor deposition material particles 40 can The nozzle 42 is frictionally charged.
  • the electric field forming unit 6 applies a first voltage V1 to the anode layer 11 through the array substrate 10, and the electric field forming unit 6 applies a second voltage V2 to the electrode plate 2.
  • the first voltage V1 and the second voltage V2 are not equal to form an electric field E between the anode layer 11 and the electrode plate 2.
  • the electric field forming unit 6 is connected to the signal input terminal 13 via a probe 7, and the first voltage V1 is applied to the anode layer 11 through the pixel circuit.
  • the charged electrodeposited material particles 20 may be electrically charged. It is positive or negative.
  • the vapor deposition material 30 is selected from a quinacridone type organic material, its dielectric constant is high in a high vacuum environment, and the particles of the material are positively charged with the nozzle friction.
  • the vapor deposition material 30 is selected as a Tetra(t-butyl)perylene-based organic material, the particles of the material are negatively charged to the nozzle.
  • the electric field forming unit 6 controls the magnitude relationship of the first voltage V1 and the second voltage V2 according to the charged polarity of the charged vapor-deposited material particles 20 to adjust the direction of the electric field E. It is ensured that the electric field E is directed to the charged evaporation material particles 20 to the array substrate 10.
  • the electric field forming unit 6 controls the second voltage V2 to be greater than the first voltage V1, and the direction of the electric field E is From the electrode plate 2 directed to the anode layer 11, the positively charged vapor-deposited material particles 20 move in the direction of the anode layer 11 in the electric field E.
  • the electric field forming unit 6 controls the second voltage V2 to be smaller than the first voltage V1, and the direction of the electric field E is from the The anode layer 11 is directed to the electrode plate 2, and at this time, the negatively-charged vapor-deposited material particles 20 are also moved toward the anode layer 11 in the electric field E.
  • the mask 5 is a metal mask, and the opening pattern 51 on the mask 5 needs to be specifically designed according to the pattern of the organic light-emitting layer 12 to be formed.
  • the vapor deposition apparatus further includes a film thickness monitoring unit 8 that obtains by detecting a deposition rate of the charged evaporation material particles 20 The film formation thickness of the organic light-emitting layer 12.
  • the evaporation unit can generate charged vapor deposition material particles, and then during the deposition of the charged evaporation material particles, the electric field formation unit applies an electric field so that the charged evaporation material particles are along Deposited perpendicular to the direction of the array substrate, the direction of movement of the vapor-deposited material particles is directional, thereby not only preventing the deposition of vapor deposition material particles outside the target area, reducing the problem of color mixing of the OLED panel, but also reducing the evaporation material.
  • the loss of particles due to non-directional diffusion deposition increases the utilization of the evaporation material and reduces the cost.
  • This embodiment also provides an evaporation method for vapor-depositing an organic light-emitting layer on an array substrate on which an anode layer is formed.
  • the process of the vapor deposition method will be described below with reference to FIG. 1, which includes the steps of:
  • the mask 5 is fixed to the mask carrier 9, and a mask 5 having an opening pattern 51 is disposed between the array substrate 10 and the evaporation unit 4.
  • the vapor deposition method further includes: controlling the film thickness monitoring unit 8 to obtain a film thickness of the organic light emitting layer 12 in real time by detecting a deposition rate of the charged vapor deposition material particles 20.
  • the anode layer 11 on the array substrate 10 includes a first anode layer 11a corresponding to a red sub-pixel, a second anode layer 11b corresponding to a green sub-pixel, and a blue sub-pixel corresponding to the blue sub-pixel.
  • the organic light emitting layer 12 includes a red organic light emitting layer 12R formed on the first anode layer 11a, a green organic light emitting layer 12G formed on the second anode layer 11b, and a blue organic organic layer formed on the third anode layer 11c.
  • Light emitting layer 12B The red organic light-emitting layer 12R, the green organic light-emitting layer 12G, and the blue organic light-emitting layer 12B are sequentially formed by vapor deposition in accordance with the above vapor deposition method.
  • the vapor-deposited material 30 is selected as an organic light-emitting material capable of generating red light
  • the opening pattern 51 of the mask 5 is selected as Corresponding to the pattern in which the red organic light-emitting layer 12R is to be formed, the opening pattern 51 of the mask 5 is opposite to the first anode layer 11a. Since the red organic light emitting layer 12R is formed on the first anode layer 11a, the electric field forming unit 6 may be only the first anode layer when a first voltage is applied to the anode layer 11.
  • 11a applies a first voltage such that an electric field E is formed only between the first anode layer 11a and the electrode plate 2, so that a red light-emitting organic light-emitting material is deposited on the first anode layer 11a to form the red Light organic light emitting layer 12R.
  • the green organic light-emitting layer 12G is subsequently evaporated.
  • the vapor deposition material 30 is selected as an organic light-emitting material capable of generating green light
  • the opening pattern 51 of the mask 5 is selected to correspond to a pattern in which the green organic light-emitting layer 12G is to be formed, the mask
  • the opening pattern 51 of the plate 5 is opposite to the second anode layer 11b. Since the green organic light emitting layer 12G is formed on the second anode layer 11b, the electric field forming unit 6 may be only to the second anode layer when a first voltage is applied to the anode layer 11.
  • 11b applies a first voltage such that an electric field E is formed only between the second anode layer 11b and the electrode plate 2, so that a green light-emitting organic light-emitting material is deposited on the second anode layer 11b to form the green Light organic light emitting layer 12G.
  • the blue organic light-emitting layer 12B is subsequently evaporated.
  • the evaporation material 30 is selected as an organic light-emitting material capable of generating blue light
  • the opening pattern 51 of the mask 5 is selected to correspond to a pattern in which the blue organic light-emitting layer 12B is to be formed, the mask 5
  • the opening pattern 51 is opposite to the third anode layer 11c. Since the blue organic light-emitting layer 12B is formed on the third anode layer 11c, the electric field forming unit 6 may be only to the third anode layer 11c when a first voltage is applied to the anode layer 11.
  • the vapor deposition method provided in the above embodiment firstly forms the vapor-deposited material to be deposited into charged vapor-deposited material particles, and then, in the process of depositing the charged vapor-deposited material particles, the charged vapor-deposited material particles are applied by applying an electric field. Deposited in a direction perpendicular to the array substrate, the direction of movement of the vapor-deposited material particles is directional, thereby not only preventing deposition of vapor deposition material particles outside the target area, reducing the problem of color mixing of the OLED panel, but also reducing steaming. The loss of plating material particles due to non-directional diffusion deposition increases the utilization rate of the evaporation material and reduces the cost.
  • the vapor deposition apparatus and the evaporation method provided by the embodiments of the present invention are used for vapor-depositing an organic light-emitting layer on an array substrate, which can prevent deposition of particles of the evaporation material outside the target area, and reduce color mixing of the OLED panel.
  • the problem is described in detail below.

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Abstract

一种蒸镀设备，用于在形成有阳极层（11）的阵列基板（10）上蒸镀有机发光层（12），包括：第一基台（1），第一基台（1）上设置有电极板（2）；第二基台（3），设置于第一基台（1）的相对上方，用于承载阵列基板（10）；蒸发单元（4），设置于电极板（2）上，用于产生带电的蒸镀材料颗粒（20）并将带电的蒸镀材料颗粒（20）朝向阵列基板（10）喷射；掩膜版载具（9），用于将具有开口图案（51）的掩膜版（5）固定于阵列基板（10）和蒸发单元（4）之间；电场形成单元（6），与阵列基板（10）和电极板（2）电连接，用于使阳极层（11）和电极板（2）之间形成电场（E），电场（E）将带电的蒸镀材料颗粒（20）导向阵列基板（10），沉积形成与开口图案（51）相对应的有机发光层（12）。还公开了一种蒸镀方法。

Description

蒸镀设备及蒸镀方法 技术领域
本发明涉及有机发光显示技术领域，具体涉及一种在阵列基板上蒸镀有机发光层的蒸镀设备及蒸镀方法。
背景技术
有机电致发光二极管(Organic light-emitting diodes，OLED)显示面板具备自发光、厚度薄、视角广和反应速度快等优点，是新一代平面显示技术的代表，越来越受到业界的推崇。
OLED显示面板已成为目前研究的重点与热点。现有技术中，OLED显示面板的基本结构包括阳极层、有机发光层和阴极层，其中，有机发光层的成膜方法有很多种，例如，蒸镀成膜法、分子束外延法、有机化学气相沉积法等。由于蒸镀成膜法具有操作简单、膜厚容易控制、对薄膜的污染小等优点，因而现有技术中多采用蒸镀成膜法形成有机发光层，即在真空环境下，将蒸镀材料加热使其蒸发，并沉积到目标基板(阵列基板)上形成有机发光层。
为了使整个OLED面板显示出全彩画面，就要使面板中的每一个像素单元都能呈现出不同的颜色，目前，OLED主要是采用红、绿、蓝三色发光层分别对应形成红色子像素、绿色子像素和蓝色子像素，不同颜色的子像素的发光层因材料不同、蒸镀的目标区域和图案不同，需要分别依次蒸镀。在蒸镀成膜过程中，主要采用高精度金属掩膜板(Fine Metal Mask，FMM)进行蒸镀，一次一种颜色分别将红、绿、蓝三种颜色有机发光材料并排镀在OLED面板的每个像素单元中。
在进行蒸镀工艺时，由蒸镀源气化产生的蒸镀材料颗粒在扩散至目标基板的过程中没有特定的方向性，在依次蒸镀红、绿、蓝三种颜色有机发光材料时，虽然设置有掩膜板阻挡，但是掩膜板和目标基板之间具有一定的间距，蒸镀材料颗粒还是有可能沉积在目标区域之外，导致OLED面板发生混色的问题。
发明内容
鉴于现有技术存在的不足，本发明提供了一种蒸镀设备及蒸镀方法，用于在阵列基板上蒸镀有机发光层，其可以避免蒸镀材料颗粒沉积在目标区域之外，降低OLED面板发生混色的问题。
为了达到上述的目的，本发明采用了如下的技术方案：
一种蒸镀设备，用于在形成有阳极层的阵列基板上蒸镀有机发光层，其中，所述蒸镀设备包括：
第一基台，所述第一基台上设置有电极板；
第二基台，设置于所述第一基台的相对上方，用于承载所述阵列基板；
蒸发单元，设置于所述电极板上，用于产生带电的蒸镀材料颗粒并将所述带电的蒸镀材料颗粒朝向所述阵列基板喷射；
掩膜版载具，用于将具有开口图案的掩膜版固定于所述阵列基板和所述蒸发单元之间；
电场形成单元，与所述阵列基板和所述电极板电连接，用于使所述阳极层和所述电极板之间形成电场，所述电场将所述带电的蒸镀材料颗粒导向所述阵列基板，沉积形成与所述开口图案相对应的有机发光层。
其中，所述蒸发单元包括坩埚和喷嘴，所述喷嘴朝向所述第二基台开口，所述坩埚用于对蒸镀材料加热使所述蒸镀材料气化形成蒸镀材料颗粒，所述蒸镀材料颗粒从所述喷嘴喷射出并与所述喷嘴发生摩擦形成所述带电的蒸镀材料颗粒。
其中，所述喷嘴的开口宽度为5～15mm，所述蒸镀材料颗粒的粒径为0.1～1nm。
其中，所述电场形成单元通过所述阵列基板向所述阳极层施加第一电压，所述电场形成单元向所述电极板施加第二电压，所述第一电压和所述第二电压不相等以使所述阳极层和所述电极板之间形成电场。
其中，所述电场形成单元根据所述带电的蒸镀材料颗粒的带电极性，控制所述第一电压和所述第二电压的大小关系，以调整所述电场的方向；其中，当所述带电的蒸镀材料颗粒的带电极性为正极性，则所述电场形成单元控制所述第二电压大于所述第一电压；当所述带电的蒸镀材料颗粒的带电极性为负极性， 则所述电场形成单元控制所述第二电压小于所述第一电压。
其中，所述阵列基板设置有像素电路和信号输入端，所述阳极层和所述像素电路电性连接，所述电场形成单元通过探针连接于所述信号输入端，再通过所述像素电路向所述阳极层施加第一电压。
其中，所述蒸镀设备还包括：膜厚监控单元，所述膜厚监控单元通过检测所述带电的蒸镀材料颗粒的沉积速率，获取所述有机发光层的成膜厚度。
本发明提供了一种蒸镀方法，用于在形成有阳极层的阵列基板上蒸镀有机发光层，其中，所述蒸镀方法包括步骤：
S10、提供如上所述的蒸镀设备；
S20、将所述阵列基板固定于所述第二基台上；
S30、将具有开口图案的掩膜版固定于所述掩膜版载具上，设置在所述阵列基板和所述蒸发单元之间；
S40、控制所述蒸发单元产生带电的蒸镀材料颗粒并将所述带电的蒸镀材料颗粒朝向所述阵列基板喷射；
S50、控制所述电场形成单元使所述阳极层和所述电极板之间形成电场，所述电场将所述带电的蒸镀材料颗粒导向所述阵列基板，沉积形成与所述开口图案相对应的有机发光层。
其中，所述有机发光层包括形成在第一阳极层上的红光有机发光层、形成在第二阳极层上的绿光有机发光层和形成在第三阳极层上的蓝光有机发光层；其中，
在沉积形成所述红光有机发光层时，所述掩膜版的开口图案正对于所述第一阳极层，所述电场形成单元使得仅在所述第一阳极层和所述电极板之间形成电场；
在沉积形成所述绿光有机发光层时，所述掩膜版的开口图案正对于所述第二阳极层，所述电场形成单元使得仅在所述第二阳极层和所述电极板之间形成电场；
在沉积形成所述蓝光有机发光层时，所述掩膜版的开口图案正对于所述第三阳极层，所述电场形成单元使得仅在所述第三阳极层和所述电极板之间形成 电场。
其中，所述蒸镀方法还包括：通过检测所述带电的蒸镀材料颗粒的沉积速率，实时获取所述有机发光层的成膜厚度。
本发明实施例提供的蒸镀设备及蒸镀方法，在阵列基板上蒸镀有机发光层时，首先是蒸发单元产生带电的蒸镀材料颗粒朝向目标阵列基板喷射，然后施加电场将带电的蒸镀材料颗粒导向阵列基板，由此带电的蒸镀材料颗粒在穿过掩膜版的开口图案之后沿着垂直于阵列基板的方向沉积在预定目标区域，其不仅可以避免蒸镀材料颗粒沉积在目标区域之外，降低OLED面板发生混色的问题，并且还可以减少蒸镀材料颗粒因不定向扩散沉积造成的损失，提高蒸镀材料的利用率，降低成本。
附图说明
图1是本发明实施例提供的蒸镀设备的结构示意图；
图2a-2c是本发明实施例提供的蒸镀方法中各个工艺步骤对应的结构图示。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面结合附图对本发明的具体实施方式进行详细说明。这些优选实施方式的示例在附图中进行了例示。附图中所示和根据附图描述的本发明的实施方式仅仅是示例性的，并且本发明并不限于这些实施方式。
在此，还需要说明的是，为了避免因不必要的细节而模糊了本发明，在附图中仅仅示出了与根据本发明的方案密切相关的结构和/或处理步骤，而省略了与本发明关系不大的其他细节。
本实施例提供了一种蒸镀设备，如图1所示，所述蒸镀设备包括第一基台1、第二基台3、蒸发单元4、掩膜版载具9和电场形成单元6，所述蒸镀设备是用于在形成有阳极层11的阵列基板10上蒸镀有机发光层12。其中，所述阵列基板10是应用在OLED面板中的阵列基板，所述阵列基板10设置有像素电路(图中未示出)和信号输入端13，所述阳极层11阵列形成于所述阵列基板10上，所述阳极层11与所述像素电路电连接。在所述蒸镀设备中，所述第一基台1、第二基台3、蒸发单元4和掩膜版载具9通常是设置在一真空腔室(图中未示出)中，所述电场形成单元6可以是设置在所述真空腔室内，也可以是设置所述真 空腔室外。
其中，所述第一基台1和所述第二基台3相对设置，所述第一基台1上设置有电极板2。第二基台3设置于所述第一基台1的相对上方，用于承载固定所述阵列基板10。所述蒸发单元4设置于所述电极板2上，用于产生带电的蒸镀材料颗粒20并将所述带电的蒸镀材料颗粒20朝向所述阵列基板10喷射。所述掩膜版载具9用于将具有开口图案51的掩膜版5固定于所述阵列基板10和所述蒸发单元4之间。所述电场形成单元6分别与所述阵列基板10和所述电极板2电连接，用于使所述阳极层11和所述电极板2之间形成电场E，所述电场E将所述带电的蒸镀材料颗粒20沿着垂直于阵列基板的方向导向所述阵列基板10，所述带电的蒸镀材料颗粒20穿过所述开口图案51沉积在所述阵列基板10上，形成与所述开口图案51相对应的有机发光层12。
具体地，如图1所示，所述蒸发单元4包括坩埚41和喷嘴42，所述喷嘴42朝向所述第二基台3开口，所述坩埚41用于对蒸镀材料30加热使所述蒸镀材料30气化形成蒸镀材料颗粒40，所述蒸镀材料颗粒40从所述喷嘴42喷射出并与所述喷嘴42发生摩擦形成所述带电的蒸镀材料颗粒20。其中，所述蒸镀材料30是有机发光材料，需要根据所要形成的有机发光层12选择具体的材料。
其中，所述喷嘴42的开口宽度可以设置为5～15mm的范围内，所述蒸镀材料颗粒的粒径为0.1～1nm。所述蒸镀材料颗粒40从所述喷嘴42喷射出并与所述喷嘴42发生摩擦从而带电，其原理可参考密立根油滴实验。具体地，需要根据所选择的蒸镀材料30气化形成的蒸镀材料颗粒40的具体粒径大小，设定所述喷嘴42的开口宽度的具体尺寸，以保证蒸镀材料颗粒40能够与所述喷嘴42发生摩擦带电。
具体地，如图1所示，所述电场形成单元6通过所述阵列基板10向所述阳极层11施加第一电压V1，所述电场形成单元6向所述电极板2施加第二电压V2，所述第一电压V1和所述第二电压V2不相等以使所述阳极层11和所述电极板2之间形成电场E。其中，所述电场形成单元6通过探针7连接于所述信号输入端13，再通过所述像素电路向所述阳极层11施加第一电压V1。
其中，所述蒸镀材料30在选择为不同的具体材料时，其对应的蒸镀材料颗粒40与所述喷嘴42发生摩擦后，形成的所述带电的蒸镀材料颗粒20的带电极性可能是正极性或者负极性。例如，所述蒸镀材料30选择为喹吖啶酮(quinacridone)类有机材料时，在高真空环境下，其介电常数高，该类材料的 颗粒与喷嘴摩擦带正电。而所述蒸镀材料30选择为Tetra(t-butyl)perylene类有机物时，该类材料的颗粒与喷嘴摩擦带负电。因此，所述电场形成单元6根据所述带电的蒸镀材料颗粒20的带电极性，控制所述第一电压V1和所述第二电压V2的大小关系，以调整所述电场E的方向，确保所述电场E是将所述带电的蒸镀材料颗粒20导向所述阵列基板10。
具体地，当所述带电的蒸镀材料颗粒20的带电极性为正极性，则所述电场形成单元6控制所述第二电压V2大于所述第一电压V1，所述电场E的方向是从所述电极板2指向所述阳极层11，正极性的所述带电的蒸镀材料颗粒20在所述电场E中是朝向所述阳极层11的方向运动。当所述带电的蒸镀材料颗粒20的带电极性为负极性，则所述电场形成单元6控制所述第二电压V2小于所述第一电压V1，所述电场E的方向是从所述阳极层11指向所述电极板2，此时，负极性的所述带电的蒸镀材料颗粒20在所述电场E中还是朝向所述阳极层11的方向运动。
其中，所述掩膜版5为金属掩膜版，所述掩膜版5上的开口图案51需要根据所要形成的有机发光层12的图案具体设计。
进一步地，本实施例中，如图1所示，所述蒸镀设备还包括膜厚监控单元8，所述膜厚监控单元8通过检测所述带电的蒸镀材料颗粒20的沉积速率，获取所述有机发光层12的成膜厚度。
如上实施例所提供的蒸镀设备，首先是蒸发单元可以产生带电的蒸镀材料颗粒，然后在带电的蒸镀材料颗粒沉积的过程中，电场形成单元施加电场使得带电的蒸镀材料颗粒沿着垂直于阵列基板的方向沉积，蒸镀材料颗粒的运动方向具有指向性，由此不仅可以避免蒸镀材料颗粒沉积在目标区域之外，降低OLED面板发生混色的问题，并且还可以减少蒸镀材料颗粒因不定向扩散沉积造成的损失，提高蒸镀材料的利用率，降低成本。
本实施例还相应提供了一种蒸镀方法，用于在形成有阳极层的阵列基板上蒸镀有机发光层。下面结合图1介绍所述蒸镀方法的工艺过程，所述蒸镀方法包括步骤：
S10、提供本实施例如前所述的蒸镀设备。
S20、将所述阵列基板10固定于所述第二基台3上。
S30、将所述掩膜版5固定于所述掩膜版载具9上，在所述阵列基板10和 所述蒸发单元4之间设置具有开口图案51的掩膜版5。
S40、控制所述蒸发单元4产生带电的蒸镀材料颗粒20并将所述带电的蒸镀材料颗粒20朝向所述阵列基板10喷射。
S50、控制所述电场形成单元6使所述阳极层11和所述电极板2之间形成电场E，所述电场E将所述带电的蒸镀材料颗粒20导向所述阵列基板10，沉积形成与所述开口图案51相对应的有机发光层12。
其中，所述蒸镀方法还包括：控制所述膜厚监控单元8，通过检测所述带电的蒸镀材料颗粒20的沉积速率，实时获取所述有机发光层12的成膜厚度。
其中，参阅图2a-2c，所述阵列基板10上的阳极层11包括对应于红色子像素的第一阳极层11a、对应于绿色子像素的第二阳极层11b和对应于蓝色子像素的第三阳极层11c。所述有机发光层12包括形成在第一阳极层11a上的红光有机发光层12R、形成在第二阳极层11b上的绿光有机发光层12G和形成在第三阳极层11c上的蓝光有机发光层12B。所述红光有机发光层12R、绿光有机发光层12G以及蓝光有机发光层12B按照以上的蒸镀方法依次蒸镀形成。
其中，如图2a所示，在蒸镀所述红光有机发光层12R时，所述蒸镀材料30选择为能够发生红光的有机发光材料，所述掩膜版5的开口图案51选择为与所要形成红光有机发光层12R的图案相对应，所述掩膜版5的开口图案51正对于所述第一阳极层11a。由于所述红光有机发光层12R是形成在所述第一阳极层11a上，因此，所述电场形成单元6在向阳极层11施加第一电压时，可以是仅向所述第一阳极层11a施加第一电压，使得仅在所述第一阳极层11a和所述电极板2之间形成电场E，使得发生红光的有机发光材料在所述第一阳极层11a上沉积形成所述红光有机发光层12R。
其中，如图2b所示，在沉积形成所述红光有机发光层12R之后，接着蒸镀所述绿光有机发光层12G。此时，所述蒸镀材料30选择为能够发生绿光的有机发光材料，所述掩膜版5的开口图案51选择为与所要形成绿光有机发光层12G的图案相对应，所述掩膜版5的开口图案51正对于所述第二阳极层11b。由于所述绿光有机发光层12G是形成在所述第二阳极层11b上，因此，所述电场形成单元6在向阳极层11施加第一电压时，可以是仅向所述第二阳极层11b施加第一电压，使得仅在所述第二阳极层11b和所述电极板2之间形成电场E，使得发生绿光的有机发光材料在所述第二阳极层11b上沉积形成所述绿光有机发光 层12G。
其中，如图2c所示，在沉积形成所述绿光有机发光层12G之后，接着蒸镀所述蓝光有机发光层12B。此时，所述蒸镀材料30选择为能够发生蓝光的有机发光材料，所述掩膜版5的开口图案51选择为与所要形成蓝光有机发光层12B的图案相对应，所述掩膜版5的开口图案51正对于所述第三阳极层11c。由于所述蓝光有机发光层12B是形成在所述第三阳极层11c上，因此，所述电场形成单元6在向阳极层11施加第一电压时，可以是仅向所述第三阳极层11c施加第一电压，使得仅在所述第三阳极层11c和所述电极板2之间形成电场E，使得发生蓝光的有机发光材料在所述第三阳极层11c上沉积形成所述蓝光有机发光层12B。
如上实施例所提供的蒸镀方法，首先是使得待沉积的蒸镀材料形成带电的蒸镀材料颗粒，然后在带电的蒸镀材料颗粒沉积的过程中，通过施加电场使得带电的蒸镀材料颗粒沿着垂直于阵列基板的方向沉积，蒸镀材料颗粒的运动方向具有指向性，由此不仅可以避免蒸镀材料颗粒沉积在目标区域之外，降低OLED面板发生混色的问题，并且还可以减少蒸镀材料颗粒因不定向扩散沉积造成的损失，提高蒸镀材料的利用率，降低成本。
综上所述，本发明实施例提供的蒸镀设备及蒸镀方法，用于在阵列基板上蒸镀有机发光层，其可以避免蒸镀材料颗粒沉积在目标区域之外，降低OLED面板发生混色的问题。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (15)

  1. 一种蒸镀设备，用于在形成有阳极层的阵列基板上蒸镀有机发光层，其中，所述蒸镀设备包括：
    第一基台，所述第一基台上设置有电极板；
    第二基台，设置于所述第一基台的相对上方，用于承载所述阵列基板；
    蒸发单元，设置于所述电极板上，用于产生带电的蒸镀材料颗粒并将所述带电的蒸镀材料颗粒朝向所述阵列基板喷射；
    掩膜版载具，用于将具有开口图案的掩膜版固定于所述阵列基板和所述蒸发单元之间；
    电场形成单元，与所述阵列基板和所述电极板电连接，用于使所述阳极层和所述电极板之间形成电场，所述电场将所述带电的蒸镀材料颗粒导向所述阵列基板，沉积形成与所述开口图案相对应的有机发光层。
  2. 根据权利要求1所述的蒸镀设备，其中，所述蒸发单元包括坩埚和喷嘴，所述喷嘴朝向所述第二基台开口，所述坩埚用于对蒸镀材料加热使所述蒸镀材料气化形成蒸镀材料颗粒，所述蒸镀材料颗粒从所述喷嘴喷射出并与所述喷嘴发生摩擦形成所述带电的蒸镀材料颗粒。
  3. 根据权利要求1所述的蒸镀设备，其中，所述喷嘴的开口宽度为5～15mm，所述蒸镀材料颗粒的粒径为0.1～1nm。
  4. 根据权利要求1所述的蒸镀设备，其中，所述电场形成单元通过所述阵列基板向所述阳极层施加第一电压，所述电场形成单元向所述电极板施加第二电压，所述第一电压和所述第二电压不相等以使所述阳极层和所述电极板之间形成电场。
  5. 根据权利要求4所述的蒸镀设备，其中，所述电场形成单元根据所述带电的蒸镀材料颗粒的带电极性，控制所述第一电压和所述第二电压的大小关系，以调整所述电场的方向；其中，
    当所述带电的蒸镀材料颗粒的带电极性为正极性，则所述电场形成单元控制所述第二电压大于所述第一电压；
    当所述带电的蒸镀材料颗粒的带电极性为负极性，则所述电场形成单元控制所述第二电压小于所述第一电压。
  6. 根据权利要求4所述的蒸镀设备，其中，所述阵列基板设置有像素电路和信号输入端，所述阳极层和所述像素电路电性连接，所述电场形成单元通过探针连接于所述信号输入端，再通过所述像素电路向所述阳极层施加第一电压。
  7. 根据权利要求1所述的蒸镀设备，其中，所述蒸镀设备还包括：
    膜厚监控单元，所述膜厚监控单元通过检测所述带电的蒸镀材料颗粒的沉积速率，获取所述有机发光层的成膜厚度。
  8. 一种蒸镀方法，用于在形成有阳极层的阵列基板上蒸镀有机发光层，其中，所述蒸镀方法包括步骤：
    S10、提供蒸镀设备，所述蒸镀设备包括：
    第一基台，所述第一基台上设置有电极板；
    第二基台，设置于所述第一基台的相对上方，用于承载所述阵列基板；
    蒸发单元，设置于所述电极板上；
    掩膜版载具，用于将具有开口图案的掩膜版固定于所述阵列基板和所述蒸发单元之间；
    电场形成单元，与所述阵列基板和所述电极板电连接，用于使所述阳极层和所述电极板之间形成电场；
    S20、将所述阵列基板固定于所述第二基台上；
    S30、将具有开口图案的掩膜版固定于所述掩膜版载具上，设置在所述阵列基板和所述蒸发单元之间；
    S40、控制所述蒸发单元产生带电的蒸镀材料颗粒并将所述带电的蒸镀材料颗粒朝向所述阵列基板喷射；
    S50、控制所述电场形成单元使所述阳极层和所述电极板之间形成电场，所述电场将所述带电的蒸镀材料颗粒导向所述阵列基板，沉积形成与所述开口图案相对应的有机发光层。
  9. 根据权利要求8所述的蒸镀方法，其中，所述有机发光层包括形成在第 一阳极层上的红光有机发光层、形成在第二阳极层上的绿光有机发光层和形成在第三阳极层上的蓝光有机发光层；其中，
    在沉积形成所述红光有机发光层时，所述掩膜版的开口图案正对于所述第一阳极层，所述电场形成单元使得仅在所述第一阳极层和所述电极板之间形成电场；
    在沉积形成所述绿光有机发光层时，所述掩膜版的开口图案正对于所述第二阳极层，所述电场形成单元使得仅在所述第二阳极层和所述电极板之间形成电场；
    在沉积形成所述蓝光有机发光层时，所述掩膜版的开口图案正对于所述第三阳极层，所述电场形成单元使得仅在所述第三阳极层和所述电极板之间形成电场。
  10. 根据权利要求8所述的蒸镀方法，其中，所述蒸镀设备还包括膜厚监控单元，所述膜厚监控单元通过检测所述带电的蒸镀材料颗粒的沉积速率，获取所述有机发光层的成膜厚度；所述蒸镀方法还包括步骤：
    通过检测所述带电的蒸镀材料颗粒的沉积速率，实时获取所述有机发光层的成膜厚度。
  11. 根据权利要求8所述的蒸镀方法，其中，所述蒸发单元包括坩埚和喷嘴，所述喷嘴朝向所述第二基台开口，所述坩埚用于对蒸镀材料加热使所述蒸镀材料气化形成蒸镀材料颗粒，所述蒸镀材料颗粒从所述喷嘴喷射出并与所述喷嘴发生摩擦形成所述带电的蒸镀材料颗粒。
  12. 根据权利要求8所述的蒸镀方法，其中，所述喷嘴的开口宽度为5～15mm，所述蒸镀材料颗粒的粒径为0.1～1nm。
  13. 根据权利要求8所述的蒸镀方法，其中，所述电场形成单元通过所述阵列基板向所述阳极层施加第一电压，所述电场形成单元向所述电极板施加第二电压，所述第一电压和所述第二电压不相等以使所述阳极层和所述电极板之间形成电场。
  14. 根据权利要求13所述的蒸镀方法，其中，所述电场形成单元根据所述带电的蒸镀材料颗粒的带电极性，控制所述第一电压和所述第二电压的大小关系，以调整所述电场的方向；其中，
    当所述带电的蒸镀材料颗粒的带电极性为正极性，则所述电场形成单元控制所述第二电压大于所述第一电压；
    当所述带电的蒸镀材料颗粒的带电极性为负极性，则所述电场形成单元控制所述第二电压小于所述第一电压。
  15. 根据权利要求13所述的蒸镀方法，其中，所述阵列基板设置有像素电路和信号输入端，所述阳极层和所述像素电路电性连接，所述电场形成单元通过探针连接于所述信号输入端，再通过所述像素电路向所述阳极层施加第一电压。
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