WO2019140753A1 - 彩色滤光基板及其制作方法 - Google Patents

彩色滤光基板及其制作方法 Download PDF

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Publication number
WO2019140753A1
WO2019140753A1 PCT/CN2018/078184 CN2018078184W WO2019140753A1 WO 2019140753 A1 WO2019140753 A1 WO 2019140753A1 CN 2018078184 W CN2018078184 W CN 2018078184W WO 2019140753 A1 WO2019140753 A1 WO 2019140753A1
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Prior art keywords
layer
substrate
insulating layer
forming
photoresist
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Ceased
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PCT/CN2018/078184
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English (en)
French (fr)
Inventor
李兰艳
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to US16/068,880 priority Critical patent/US10809560B2/en
Publication of WO2019140753A1 publication Critical patent/WO2019140753A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/111—Anti-reflection coatings using layers comprising organic materials
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133502—Antiglare, refractive index matching layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/38—Anti-reflection arrangements

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a color filter substrate and a method of fabricating the same.
  • LCDs liquid crystal displays
  • Various consumer electronic products such as assistants, digital cameras, notebook computers, and desktop computers have become mainstream in display devices.
  • a conventional liquid crystal display panel is formed by laminating a thin film transistor array substrate (TFT Array Substrate) and a color filter substrate (CF Substrate), respectively, on a TFT substrate and a CF substrate.
  • TFT Array Substrate thin film transistor array substrate
  • CF Substrate color filter substrate
  • a pixel electrode and a common electrode are formed thereon, and a liquid crystal is poured between the TFT substrate and the CF substrate.
  • the working principle is to apply an electric field between the pixel electrode and the common electrode by using an electric field formed between the pixel electrode and the common electrode.
  • the rotation of the liquid crystal molecules in the liquid crystal layer is controlled, and the light of the backlight module is refracted to generate a picture.
  • a color photoresist layer is disposed in the CF substrate, and the backlight is filtered by the color photoresist layer to realize three primary colors of red, green and blue.
  • COA Color Filter on Array
  • An object of the present invention is to provide a method for fabricating a color filter substrate.
  • Another object of the present invention is to provide a color filter substrate.
  • the present invention provides a method for fabricating a color filter substrate, comprising the following steps:
  • Step S1 providing a substrate, forming an anti-reflection layer on the substrate;
  • Step S2 forming a color photoresist layer on the anti-reflection layer, wherein the color photoresist layer is formed by a photolithography process, and the photolithography process includes a coating photoresist, an exposure and a development process.
  • the material of the anti-reflection layer comprises a polymer grafting a light-absorbing group, the light-absorbing group has an absorption band of 200-400 nm; the anti-reflection layer is formed by coating; the thickness of the anti-reflection layer is 1 to 5 ⁇ m.
  • the light absorbing group includes one or more of naphthalene and anthracene
  • the polymer includes one or more of a cresol novolac epoxy resin and a polyvinyl ether.
  • the substrate is a TFT substrate, and the step S1 specifically includes:
  • Step S11 providing a base substrate, forming a first metal layer on the base substrate, the first metal layer including a gate;
  • Step S12 forming a first insulating layer covering the first metal layer on the first metal layer and the substrate, and forming an active layer on the first insulating layer corresponding to the gate;
  • Step S13 forming a second metal layer on the active layer and the first insulating layer, the second metal layer includes spaced apart source and drain electrodes, and the source and drain electrodes and the active layer respectively Contact on both sides;
  • Step S14 forming a second insulating layer on the second metal layer, the active layer and the first insulating layer to obtain a substrate;
  • Step S15 forming an anti-reflection layer on the second insulating layer of the substrate.
  • the method for manufacturing the color filter substrate further includes:
  • Step S3 forming a third insulating layer on the color photoresist layer, forming a via hole in the second insulating layer, the anti-reflective layer, the color photoresist layer and the third insulating layer;
  • Step S4 forming a pixel electrode on the third insulating layer, the pixel electrode contacting the drain via the through hole;
  • Step S5 forming a black matrix spaced apart from the pixel electrode and a photoresist spacer disposed on the black matrix on the third insulating layer.
  • the present invention also provides a color filter substrate comprising: a substrate, an anti-reflection layer disposed on the substrate, and a color photoresist layer disposed on the anti-reflection layer.
  • the material of the anti-reflection layer includes a polymer that grafts a light-absorbing group, the light-absorbing group has an absorption band of 200 to 400 nm, and the anti-reflection layer has a thickness of 1 to 5 ⁇ m.
  • the light absorbing group includes one or more of naphthalene and anthracene
  • the polymer includes one or more of a cresol novolac epoxy resin and a polyvinyl ether.
  • the substrate is a TFT substrate
  • the TFT substrate includes: a base substrate, a first metal layer disposed on the base substrate, a first insulating layer disposed on the first metal layer and the base substrate, An active layer disposed on the first insulating layer, a second metal layer disposed on the active layer and the first insulating layer, and the second metal layer, the active layer and the first insulating layer a second insulating layer thereon;
  • the first metal layer includes a gate; the active layer is disposed above the gate;
  • the second metal layer includes spaced apart source and drain electrodes, and the source and drain electrodes are respectively in contact with both sides of the active layer.
  • the color filter substrate further includes: a third insulating layer disposed on the color photoresist layer; a pixel electrode disposed on the third insulating layer, disposed on the third insulating layer and coupled to the pixel electrode a black matrix spaced apart and a photoresist spacer disposed on the black matrix;
  • a through hole is formed in the second insulating layer, the anti-reflective layer, the color photoresist layer and the third insulating layer, and the pixel electrode is in contact with the drain via the through hole.
  • the invention also provides a method for fabricating a color filter substrate, comprising the following steps:
  • Step S1 providing a substrate, forming an anti-reflection layer on the substrate;
  • Step S2 forming a color photoresist layer on the anti-reflective layer, wherein the color photoresist layer is formed by a photolithography process, and the photolithography process comprises a coating photoresist, an exposure and a development process;
  • the material of the anti-reflection layer comprises a polymer grafting a light-absorbing group, the light-absorbing group has an absorption band of 200-400 nm; the anti-reflection layer is formed by coating; the anti-reflection layer is Thickness is 1 to 5 ⁇ m;
  • the light absorbing group comprises one or more of naphthalene and anthracene, the polymer comprising one or more of a cresol novolac epoxy resin and a polyvinyl ether;
  • the substrate is a TFT substrate
  • the step S1 specifically includes:
  • Step S11 providing a base substrate, forming a first metal layer on the base substrate, the first metal layer including a gate;
  • Step S12 forming a first insulating layer covering the first metal layer on the first metal layer and the substrate, and forming an active layer on the first insulating layer corresponding to the gate;
  • Step S13 forming a second metal layer on the active layer and the first insulating layer, the second metal layer includes spaced apart source and drain electrodes, and the source and drain electrodes and the active layer respectively Contact on both sides;
  • Step S14 forming a second insulating layer on the second metal layer, the active layer and the first insulating layer to obtain a substrate;
  • Step S15 forming an anti-reflection layer on the second insulating layer of the substrate
  • Step S3 forming a third insulating layer on the color photoresist layer, forming a via hole in the second insulating layer, the anti-reflective layer, the color photoresist layer and the third insulating layer;
  • Step S4 forming a pixel electrode on the third insulating layer, the pixel electrode contacting the drain via the through hole;
  • Step S5 forming a black matrix spaced apart from the pixel electrode and a photoresist spacer disposed on the black matrix on the third insulating layer.
  • the invention has the beneficial effects that the method for fabricating the color filter substrate of the present invention is provided with an anti-reflection layer under the color photoresist layer, and in the photolithography process of the color photoresist layer, an anti-reflection layer is disposed under the photoresist. Therefore, in the process of exposing the photoresist, the anti-reflection layer can effectively absorb the ultraviolet light incident into the anti-reflection layer, and is weakened by the destructive interference from the contact interface of the photoresist and the anti-reflection layer. The reflected light, in turn, eliminates the standing wave effect, the wobble effect and the recess effect in the lithography technique, and improves the key size uniformity and pattern resolution of the color resistive unit.
  • the color filter substrate of the present invention can improve the critical size uniformity and pattern resolution of the color resistive unit in the color resist layer by providing an anti-reflection layer under the color resist layer, thereby improving the liquid crystal containing the color filter substrate.
  • the resolution and display of the display can improve the critical size uniformity and pattern resolution of the color resistive unit in the color resist layer by providing an anti-reflection layer under the color resist layer, thereby improving the liquid crystal containing the color filter substrate.
  • FIG. 1 is a schematic view showing incident light reflected at a contact interface between a photoresist and a substrate during exposure of a photoresist;
  • FIG. 2 is a schematic view showing the attenuation of reflected light after an anti-reflection layer is disposed between the photoresist of FIG. 1 and the substrate;
  • FIG. 3 is a flow chart of a method of fabricating a color filter substrate of the present invention.
  • FIG. 5 is a cross-sectional view showing a step S12 of the method for fabricating a color filter substrate of the present invention
  • FIG. 6 is a cross-sectional view showing the step S13 of the method for fabricating the color filter substrate of the present invention.
  • FIG. 7 is a cross-sectional view showing the step S14 of the method for fabricating the color filter substrate of the present invention.
  • FIG. 8 is a cross-sectional view showing the step S15 of the method for fabricating the color filter substrate of the present invention.
  • FIG. 9 is a cross-sectional view showing the step S2 of the method for fabricating the color filter substrate of the present invention.
  • FIG. 10 is a cross-sectional view showing the step S31 of the method for fabricating the color filter substrate of the present invention.
  • Figure 11 is a cross-sectional view showing the step S32 of the method for fabricating the color filter substrate of the present invention.
  • FIG. 12 is a cross-sectional view showing a step S4 of the method for fabricating a color filter substrate of the present invention
  • Fig. 13 is a cross-sectional view showing a step S5 of the method for fabricating a color filter substrate of the present invention, and a schematic cross-sectional view of the color filter substrate of the present invention.
  • the idea of the invention is to effectively eliminate the standing wave effect, the wobble effect and the recess effect in the lithography by providing an anti-reflection layer under the photoresist, and improve the key size uniformity and pattern resolution of the photoresist.
  • I R 1 is a schematic reflected at the contact interface of the photoresist 200 and the substrate 100 during the exposure of the incident light in the photoresist 200; FIG. 1, during the exposure of the photoresist 200, the incident light I R photoresist 200 and the substrate 100 contact interface reflection, reflected light is generated I S, I S of the reflected light led to the standing wave effect, and the effect of rocking the depression effect occurs during exposure of the photoresist 200, thereby affecting the photoresist 200 The reason for the molding effect.
  • the anti-reflection layer 300 can reduce the reflectance of the incident light I R in two ways: the first way is that the light absorbing group inherent in the anti-reflection layer 300 can absorb a large amount of ultraviolet light; the second way is to enter A portion of the incident light I R in the photoresist 200 is reflected at the contact interface of the photoresist 200 and the anti-reflection layer 300 to generate the first reflected light Is, and at the same time, another portion of the incident light I R entering the photoresist 200 is refracted.
  • the anti-reflection layer 300 can significantly reduce the reflectivity of the incident light I R entering the photoresist 200, effectively eliminating the standing wave effect, the sway effect and the recess effect in the lithography technology, and improving the light.
  • the present invention provides a method for fabricating a color filter substrate, including the following steps:
  • Step S1 as shown in FIGS. 4 to 8, a substrate 10 is provided on which an anti-reflection layer 61 is formed.
  • the material of the anti-reflection layer 61 includes a polymer that grafts a light-absorbing group, and the light absorption band of the light-absorbing group is 200 to 400 nm, so that the light absorption band of the anti-reflection layer 61 is 200 to 400 nm.
  • the anti-reflection layer 61 is formed by coating.
  • the anti-reflection layer 61 has a thickness of 1 to 5 ⁇ m.
  • the light absorbing group includes one or more of naphthalene and anthracene
  • the polymer includes one or more of a cresol novolac epoxy resin and a polyvinyl ether.
  • the substrate 10 may be a plain substrate or a TFT substrate.
  • the subsequently produced color filter substrate is a COA type array substrate.
  • the step S1 specifically includes:
  • Step S11 as shown in FIG. 4, a base substrate 11 is provided on which a first metal layer 20 is formed, the first metal layer 20 including a gate electrode 21.
  • the base substrate 11 is a plain glass substrate.
  • the method for preparing the first metal layer 20 includes physical vapor deposition (PVD), coating photoresist, exposure (PHOTO), development, wet etching (WET), and photoresist stripping (STRIP) processes.
  • PVD physical vapor deposition
  • PHOTO coating photoresist
  • WET development, wet etching
  • STRIP photoresist stripping
  • the material of the first metal layer 20 includes at least one of aluminum and its alloys, copper and alloys thereof, molybdenum and alloys thereof.
  • the first metal layer 20 further includes a common electrode line 22 spaced apart from the gate electrode 21 .
  • the array substrate is paired with the substrate having the common electrode, and the common electrode line 22 in the array substrate is connected to the common electrode in the substrate having the common electrode through a connection terminal, and the common electrode line 22 is connected. Used to provide a voltage signal to the common electrode.
  • Step S12 as shown in FIG. 5, a first insulating layer 31 covering the first metal layer 20 is formed on the first metal layer 20 and the base substrate 11, and a corresponding correspondence is formed on the first insulating layer 31.
  • the first insulating layer 31 is formed by chemical vapor deposition (CVD), and the first insulating layer 31 is a silicon nitride (SiNx) layer.
  • CVD chemical vapor deposition
  • SiNx silicon nitride
  • the preparation method of the active layer 41 includes a chemical vapor deposition (CVD), a coating photoresist, a exposure (PHOTO), a development, a dry etching (DRY), and a photoresist stripping (STRIP) process.
  • CVD chemical vapor deposition
  • PHOTO a coating photoresist
  • PHOTO a exposure
  • DDRY dry etching
  • STRIP photoresist stripping
  • the material of the active layer 41 is amorphous silicon or polycrystalline silicon.
  • Step S13 as shown in FIG. 6, a second metal layer 50 is formed on the active layer 41 and the first insulating layer 31, and the second metal layer 50 includes a source 51 and a drain 52 which are disposed at intervals.
  • the source 51 and the drain 52 are in contact with both sides of the active layer 41, respectively.
  • the method for preparing the second metal layer 50 includes physical vapor deposition (PVD), coating photoresist, exposure (PHOTO), development, wet etching (WET), and photoresist stripping (STRIP) processes.
  • PVD physical vapor deposition
  • PHOTO coating photoresist
  • WET development, wet etching
  • STRIP photoresist stripping
  • the material of the second metal layer 50 includes at least one of aluminum and its alloys, copper and alloys thereof, molybdenum and alloys thereof.
  • Step S14 as shown in FIG. 7, a second insulating layer 32 is formed on the second metal layer 50, the active layer 41, and the first insulating layer 31 to obtain a substrate 10.
  • the second insulating layer 32 is formed by chemical vapor deposition (CVD), and the second insulating layer 32 is a silicon nitride (SiNx) layer.
  • CVD chemical vapor deposition
  • SiNx silicon nitride
  • Step S15 as shown in FIG. 8, an anti-reflection layer 61 is formed on the second insulating layer 32 of the substrate 10.
  • Step S2 as shown in FIG. 9, a color photoresist layer 70 is formed on the anti-reflection layer 61, and the color photoresist layer 70 is formed by a photolithography process including coating photoresist and exposure. And development process.
  • the color photoresist layer 70 includes a plurality of red color resist units 71 arranged in an array, a plurality of green color resist units 72, and a plurality of blue color resist units 73.
  • the red color resist unit 71 is formed by a photolithography process using a red photoresist material
  • the green color resistive unit 72 is formed by a photolithography process using a green photoresist material
  • the blue color resist unit 73 is blue.
  • the color resist material is obtained by a photolithography process; the order in which the red color resist unit 71, the green color resist unit 72, and the blue color resist unit 73 are formed is not limited.
  • the color photoresist layer 70 obtained in the step S2 is provided with a first via hole 75 corresponding to the upper side of the drain electrode 52.
  • the anti-reflection layer 61 can be exposed during the exposure of the photoresist. Effectively absorbing ultraviolet light incident into the anti-reflection layer 61, and attenuating reflected light emitted from the contact interface of the photoresist and the anti-reflection layer 61 by destructive interference, thereby eliminating the standing wave effect in the photolithography technique, The sway effect and the recess effect enhance the critical size uniformity and pattern resolution of the color resistive unit.
  • the present invention provides the color photoresist layer 70 on the anti-reflection layer 61, and has the following technical effects:
  • the photoresist material is usually in direct contact with an inorganic substrate, and the photoresist material usually contains a silane coupling agent, and the principle of the photoresist material being attached to the inorganic substrate includes: (1) the photoresist material The silane coupling agent is hydrolyzed to silanol; (2) the silanol is condensed into an oligomer; (3) the oligomer forms a hydrogen bond with the hydroxyl group (-OH) on the surface of the inorganic substrate; (4) under dry and solidified conditions The oligomer condenses with the hydroxyl group on the surface of the inorganic substrate to form a covalent bond.
  • connection method requires extremely high characteristics and process conditions of the photoresist material, limits the application of the photoresist material, and improves the light.
  • the present invention coats an inorganic substrate with an antireflection layer 61 made of an organic material.
  • the surface of the antireflection layer 61 contains more hydroxyl groups than the inorganic substrate, and has a large surface tension and a strong wetting ability.
  • the coupling effect of the resist material and the anti-reflective layer 61 is better, the photoresist adhesion ability is remarkably improved, and the peeling issue can be effectively improved.
  • the method for manufacturing the color filter substrate further includes:
  • Step S3 as shown in FIG. 10 to FIG. 11, a third insulating layer 33 is formed on the color photoresist layer 70, and the second insulating layer 32, the anti-reflective layer 61, the color photoresist layer 70, and the third layer are formed.
  • a through hole 81 is formed in the insulating layer 33.
  • the step S3 specifically includes:
  • Step S31 as shown in FIG. 10, a third insulating layer 33 is formed on the color photoresist layer 70, and a second via 332 corresponding to the first via 75 is formed in the third insulating layer 33. ;
  • Step S32 as shown in FIG. 11, the second insulating layer 33 and the color resist layer 70 are used as a mask, and the second insulating layer 32 and the anti-reflective layer 61 are dry-etched, in the second A third via hole 323 is formed in the insulating layer 32 and the anti-reflection layer 61; the first via hole 75, the second via hole 332, and the third via hole 323 that penetrate each other together constitute the through hole 81.
  • the second insulating layer 32 and the anti-reflective layer 61 are dry etched by plasma bombardment, the plasma is an inert gas plasma, and the inert gas is preferably argon gas.
  • the third insulating layer 33 is an organic flat layer or an inorganic passivation layer, and when the third insulating layer 33 is an organic flat layer, the material of the organic flat layer is a photoresist material, and the third insulation The layer 33 is formed by coating; when the third insulating layer 33 is an inorganic passivation layer, the third insulating layer 33 is formed by chemical vapor deposition (CVD), and the inorganic passivation layer is preferably silicon nitride. (SiNx) layer.
  • CVD chemical vapor deposition
  • the step S31 may further include: forming the color photoresist layer 70 between the color photoresist layer 70 and the third insulating layer 33.
  • An anti-reflection layer (not shown) capable of enhancing the molding effect of the second via hole 332 formed in the third insulating layer 33.
  • Step S4 as shown in FIG. 12, a pixel electrode 82 is formed on the third insulating layer 33, and the pixel electrode 82 is in contact with the drain electrode 52 via the via hole 81.
  • the material of the pixel electrode 82 is indium tin oxide (ITO).
  • Step S5 as shown in FIG. 13, a black matrix 91 spaced apart from the pixel electrode 82 and a photoresist spacer 92 provided on the black matrix 91 are formed on the third insulating layer 33.
  • the black matrix 91 and the photoresist spacer 92 are integrally formed from the same material.
  • the step S5 may further include: forming an anti-reflection layer (not shown) between the third insulating layer 33 and the black matrix 91 on the third insulating layer 33, the anti-reflection layer
  • an anti-reflection layer (not shown) between the third insulating layer 33 and the black matrix 91 on the third insulating layer 33, the anti-reflection layer
  • an anti-reflection layer 61 is disposed under the color photoresist layer 70.
  • the anti-reflection layer 61 is capable of effectively absorbing ultraviolet light incident into the anti-reflection layer 61 and attenuating from the contact interface of the photoresist and the anti-reflection layer 61 by destructive interference during exposure prevention.
  • the reflected light in turn, eliminates the standing wave effect, the wobble effect and the recess effect in the lithography technique, and improves the key size uniformity and pattern resolution of the color resisting unit.
  • the present invention further provides a color filter substrate, comprising: a substrate 10, an anti-reflection layer 61 disposed on the substrate 10, and the anti-reflection layer.
  • the material of the anti-reflection layer 61 includes a polymer that grafts a light-absorbing group, and the light absorption band of the light-absorbing group is 200 to 400 nm, so that the light absorption band of the anti-reflection layer 61 is 200 to 400 nm.
  • the anti-reflection layer 61 has a thickness of 1 to 5 ⁇ m.
  • the light absorbing group includes one or more of naphthalene and anthracene
  • the polymer includes one or more of a cresol novolac epoxy resin and a polyvinyl ether.
  • the color photoresist layer 70 includes a plurality of red color resist units 71 arranged in an array, a plurality of green color resist units 72, and a plurality of blue color resist units 73.
  • the substrate 10 may be a plain substrate or a TFT substrate, and the TFT substrate includes: a base substrate 11 , a first metal layer 20 disposed on the base substrate 11 , and a first metal layer And a first insulating layer 31 on the base substrate 11, an active layer 41 disposed on the first insulating layer 31, and a second metal layer disposed on the active layer 41 and the first insulating layer 31 50, a second insulating layer 32 disposed on the second metal layer 50, the active layer 41 and the first insulating layer 31;
  • the first metal layer 20 includes a gate electrode 21; the active layer 41 is disposed above the gate electrode 21;
  • the second metal layer 50 includes a source 51 and a drain 52 which are spaced apart from each other, and the source 51 and the drain 52 are respectively in contact with both sides of the active layer 41.
  • the color filter substrate is a COA type array substrate.
  • the color filter substrate further includes: a third insulating layer 33 disposed on the color photoresist layer 70, and a pixel disposed on the third insulating layer 33.
  • a through hole 81 is formed in the second insulating layer 32, the anti-reflective layer 61, the color resist layer 70, and the third insulating layer 33, and the pixel electrode 82 is in contact with the drain 52 via the through hole 81.
  • the base substrate 11 is a plain glass substrate.
  • the material of the first metal layer 20 includes at least one of aluminum and its alloys, copper and alloys thereof, molybdenum and alloys thereof.
  • the first metal layer 20 further includes a common electrode line 22 spaced apart from the gate electrode 21 .
  • the first insulating layer 31 is a silicon nitride (SiNx) layer.
  • the material of the active layer 41 is amorphous silicon or polycrystalline silicon.
  • the material of the second metal layer 50 includes at least one of aluminum and its alloys, copper and alloys thereof, molybdenum and alloys thereof.
  • the second insulating layer 32 is a silicon nitride (SiNx) layer.
  • the third insulating layer 33 is an organic flat layer or an inorganic passivation layer, and when the third insulating layer 33 is an organic flat layer, the material of the organic flat layer is a photoresist material; the third insulation When the layer 33 is an inorganic passivation layer, the inorganic passivation layer is preferably a silicon nitride (SiNx) layer.
  • the black matrix 91 and the photoresist spacer 92 are integrally formed from the same material.
  • the material of the pixel electrode 82 is indium tin oxide (ITO).
  • the through hole 81 includes: a first via hole 75 disposed on the color photoresist layer 70, a second via hole 332 disposed on the third insulating layer 33, and the second via hole 332.
  • the insulating layer 32 and the third via hole 323 of the anti-reflection layer 61; the first via hole 75, the second via hole 332, and the third via hole 323 penetrate each other.
  • the color filter substrate may further include an anti-reflection layer (not shown) between the color photoresist layer 70 and the third insulation layer 33, and may also include the third insulation layer 33 and An anti-reflection layer (not shown) between the black matrices 91.
  • the color filter substrate can improve the key size uniformity and pattern resolution of the color resist unit in the color photoresist layer 70, thereby improving the color filter substrate.
  • the resolution and display of the LCD display can improve the key size uniformity and pattern resolution of the color resist unit in the color photoresist layer 70, thereby improving the color filter substrate.
  • the method for fabricating the color filter substrate of the present invention has an anti-reflection layer disposed under the color photoresist layer.
  • an anti-reflection layer is disposed under the photoresist.
  • the anti-reflection layer is capable of effectively absorbing ultraviolet light incident into the anti-reflection layer during exposure of the photoresist, and attenuating the contact interface from the photoresist and the anti-reflection layer by destructive interference.
  • the reflected light eliminates the standing wave effect, the wobble effect and the recess effect in the lithography technique, and improves the key size uniformity and pattern resolution of the color resisting unit.
  • the color filter substrate of the present invention can improve the critical size uniformity and pattern resolution of the color resistive unit in the color resist layer by providing an anti-reflection layer under the color resist layer, thereby improving the liquid crystal containing the color filter substrate.
  • the resolution and display of the display can improve the critical size uniformity and pattern resolution of the color resistive unit in the color resist layer by providing an anti-reflection layer under the color resist layer, thereby improving the liquid crystal containing the color filter substrate.

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Abstract

一种彩色滤光基板及其制作方法，该制作方法包括：步骤S1、提供基底（10），在所述基底（10）上形成抗反射层（61）；步骤S2、在所述抗反射层（61）上形成彩色光阻层（70），所述彩色光阻层（70）通过光刻制程制得，所述光刻制程包括涂布光阻、曝光及显影制程。通过在彩色光阻层（70）下方设置抗反射层（61），在彩色光阻层（70）的光刻制程中，由于光阻的下方设有抗反射层（61），因此在对光阻进行曝光的过程中，所述抗反射层（61）能够有效吸收入射到所述抗反射层（61）中的紫外光，并且通过相消干涉减弱从所述光阻与抗反射层（61）的接触界面出射的反射光，进而消除光刻技术中的驻波效应、摇摆效应与凹缺效应，提高色阻单元的关键尺寸均一性和图案分辨率。

Description

彩色滤光基板及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种彩色滤光基板及其制作方法。
背景技术
随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄、无辐射等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
现有市场上的液晶显示器大部分为背光型液晶显示器，其包括壳体、设于壳体内的液晶显示面板及设于壳体内的背光模组(Backlight module)。传统的液晶显示面板是由一片薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate)与一片彩色滤光片基板(Color Filter Substrate，CF Substrate)贴合而成，分别在TFT基板和CF基板上形成像素电极和公共电极，并在TFT基板与CF基板之间灌入液晶，其工作原理是通过在像素电极与公共电极之间施加驱动电压，利用像素电极与公共电极之间形成的电场来控制液晶层内的液晶分子的旋转，将背光模组的光线折射出来产生画面。所述CF基板中设有彩色光阻层，通过彩色光阻层对背光进行过滤，实现红绿蓝三原色显示。
目前业界还有一种COA(Color Filter on Array)技术，其将彩色光阻层制备于薄膜晶体管阵列基板上，可以避免彩色滤光片(CF)基板与阵列(Array)基板的对位问题，降低显示面板制备过程中对盒制程的难度，避免了对盒时的误差，提高了像素的开口率。
近年来，随着光电技术的蓬勃发展，光刻技术朝着更高分辨率的方向迈进，要求彩色光阻层中的红、绿、蓝色色阻单元的线宽越来越小。然而，在彩色光阻层的光刻制程中，由于入射光在光阻与基底的接触界面处容易进行反射，导致光阻进行曝光时容易出现驻波效应、摇摆效应与凹缺效应，使色阻单元的侧壁出现凹凸不平的情况，从而影响色阻单元的成型效果，这一问题在现在盛行的COA、POA(PS On Array)显示器中表现尤为显著，因此，如何改善光刻制程中色阻单元的成型状况成为业界急需解决的技术问题。
发明内容
本发明的目的在于提供一种彩色滤光基板的制作方法，通过在彩色光阻层下方设置抗反射层，能够消除光刻技术中的驻波效应、摇摆效应与凹缺效应，提高色阻单元的关键尺寸均一性和图案分辨率。
本发明的目的还在于提供一种彩色滤光基板，通过在彩色光阻层下方设置抗反射层，能够提高彩色光阻层中的色阻单元的关键尺寸均一性和图案分辨率，进而提升含有该彩色滤光基板的液晶显示器的分辨率与显示效果。
为实现上述目的，本发明提供一种彩色滤光基板的制作方法，包括如下步骤：
步骤S1、提供基底，在所述基底上形成抗反射层；
步骤S2、在所述抗反射层上形成彩色光阻层，所述彩色光阻层通过光刻制程制得，所述光刻制程包括涂布光阻、曝光及显影制程。
所述抗反射层的材料包括接枝吸光基团的聚合物，所述吸光基团的吸光波段为200～400nm；所述抗反射层通过涂布的方式形成；所述抗反射层的厚度为1～5μm。
所述吸光基团包括萘与蒽中的一种或多种，所述聚合物包括甲酚醛环氧树脂与聚乙烯基醚中的一种或多种。
所述基底为TFT基板，所述步骤S1具体包括：
步骤S11、提供衬底基板，在所述衬底基板上形成第一金属层，所述第一金属层包括栅极；
步骤S12、在所述第一金属层与衬底基板上形成覆盖所述第一金属层的第一绝缘层，在所述第一绝缘层上形成对应于所述栅极上方的有源层；
步骤S13、在所述有源层与第一绝缘层上形成第二金属层，所述第二金属层包括间隔设置的源极与漏极，所述源极与漏极分别与有源层的两侧相接触；
步骤S14、在所述第二金属层、有源层与第一绝缘层上形成第二绝缘层，制得基底；
步骤S15、在所述基底的第二绝缘层上形成抗反射层。
所述彩色滤光基板的制作方法还包括：
步骤S3、在所述彩色光阻层上形成第三绝缘层，在所述第二绝缘层、抗反射层、彩色光阻层与第三绝缘层中形成通孔；
步骤S4、在所述第三绝缘层上形成像素电极，所述像素电极经由所述通孔与漏极相接触；
步骤S5、在所述第三绝缘层上形成与像素电极间隔设置的黑色矩阵以及设于所述黑色矩阵上的光阻间隙物。
本发明还提供一种彩色滤光基板，包括：基底、设于所述基底上的抗反射层、设于所述抗反射层上的彩色光阻层。
所述抗反射层的材料包括接枝吸光基团的聚合物，所述吸光基团的吸光波段为200～400nm；所述抗反射层的厚度为1～5μm。
所述吸光基团包括萘与蒽中的一种或多种，所述聚合物包括甲酚醛环氧树脂与聚乙烯基醚中的一种或多种。
所述基底为TFT基板，所述TFT基板包括：衬底基板、设于所述衬底基板上的第一金属层、设于所述第一金属层与衬底基板上的第一绝缘层、设于所述第一绝缘层上的有源层、设于所述有源层与第一绝缘层上的第二金属层、设于所述第二金属层、有源层与第一绝缘层上的第二绝缘层；
所述第一金属层包括栅极；所述有源层对应于所述栅极上方设置；
所述第二金属层包括间隔设置的源极与漏极，所述源极与漏极分别与有源层的两侧相接触。
所述彩色滤光基板还包括：设于所述彩色光阻层上的第三绝缘层、设于所述第三绝缘层上的像素电极、设于所述第三绝缘层上且与像素电极间隔设置的黑色矩阵以及设于所述黑色矩阵上的光阻间隙物；
所述第二绝缘层、抗反射层、彩色光阻层与第三绝缘层中设有通孔，所述像素电极经由所述通孔与漏极相接触。
本发明还提供一种彩色滤光基板的制作方法，包括如下步骤：
步骤S1、提供基底，在所述基底上形成抗反射层；
步骤S2、在所述抗反射层上形成彩色光阻层，所述彩色光阻层通过光刻制程制得，所述光刻制程包括涂布光阻、曝光及显影制程；
其中，所述抗反射层的材料包括接枝吸光基团的聚合物，所述吸光基团的吸光波段为200～400nm；所述抗反射层通过涂布的方式形成；所述抗反射层的厚度为1～5μm；
其中，所述吸光基团包括萘与蒽中的一种或多种，所述聚合物包括甲酚醛环氧树脂与聚乙烯基醚中的一种或多种；
其中，所述基底为TFT基板，所述步骤S1具体包括：
步骤S11、提供衬底基板，在所述衬底基板上形成第一金属层，所述第一金属层包括栅极；
步骤S12、在所述第一金属层与衬底基板上形成覆盖所述第一金属层的第一绝缘层，在所述第一绝缘层上形成对应于所述栅极上方的有源层；
步骤S13、在所述有源层与第一绝缘层上形成第二金属层，所述第二金属层包括间隔设置的源极与漏极，所述源极与漏极分别与有源层的两侧相接触；
步骤S14、在所述第二金属层、有源层与第一绝缘层上形成第二绝缘层，制得基底；
步骤S15、在所述基底的第二绝缘层上形成抗反射层；
步骤S3、在所述彩色光阻层上形成第三绝缘层，在所述第二绝缘层、抗反射层、彩色光阻层与第三绝缘层中形成通孔；
步骤S4、在所述第三绝缘层上形成像素电极，所述像素电极经由所述通孔与漏极相接触；
步骤S5、在所述第三绝缘层上形成与像素电极间隔设置的黑色矩阵以及设于所述黑色矩阵上的光阻间隙物。
本发明的有益效果：本发明的彩色滤光基板的制作方法通过在彩色光阻层下方设置抗反射层，在彩色光阻层的光刻制程中，由于光阻的下方设有抗反射层，因此在对光阻进行曝光的过程中，所述抗反射层能够有效吸收入射到所述抗反射层中的紫外光，并且通过相消干涉减弱从所述光阻与抗反射层的接触界面出射的反射光，进而消除光刻技术中的驻波效应、摇摆效应与凹缺效应，提高色阻单元的关键尺寸均一性和图案分辨率。本发明的彩色滤光基板通过在彩色光阻层下方设置抗反射层，能够提高彩色光阻层中的色阻单元的关键尺寸均一性和图案分辨率，进而提升含有该彩色滤光基板的液晶显示器的分辨率与显示效果。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为在光阻的曝光过程中入射光在光阻与基底的接触界面进行反射的示意图；
图2为在图1的光阻与基底之间设置抗反射层后反射光减弱的示意图；
图3为本发明的彩色滤光基板的制作方法的流程图；
图4为本发明的彩色滤光基板的制作方法的步骤S11的剖视示意图；
图5为本发明的彩色滤光基板的制作方法的步骤S12的剖视示意图；
图6为本发明的彩色滤光基板的制作方法的步骤S13的剖视示意图；
图7为本发明的彩色滤光基板的制作方法的步骤S14的剖视示意图；
图8为本发明的彩色滤光基板的制作方法的步骤S15的剖视示意图；
图9为本发明的彩色滤光基板的制作方法的步骤S2的剖视示意图；
图10为本发明的彩色滤光基板的制作方法的步骤S31的剖视示意图；
图11为本发明的彩色滤光基板的制作方法的步骤S32的剖视示意图；
图12为本发明的彩色滤光基板的制作方法的步骤S4的剖视示意图；
图13为本发明的彩色滤光基板的制作方法的步骤S5的剖视示意图以及本发明的彩色滤光基板的剖视示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
本发明的构思在于通过在光阻下方设置抗反射层，有效消除光刻技术中的驻波效应、摇摆效应与凹缺效应，提高光阻的关键尺寸均一性和图案分辨率。
图1为在光阻200的曝光过程中入射光I R在光阻200与基底100的接触界面进行反射的示意图；如图1所示，在光阻200的曝光过程中，入射光I R在光阻200与基底100的接触界面进行反射，产生反射光I S，所述反射光I S是导致光阻200的曝光过程中出现驻波效应、摇摆效应与凹缺效应，进而影响光阻200的成型效果的原因。
图2为在图1的光阻200与基底100之间设置抗反射层300后反射光I R减弱的示意图；如图2所示，在光阻200与基底100之间设置抗反射层300后，抗反射层300能够通过两种方式降低入射光I R的反射率：第一种方式是，抗反射层300中固有的吸光基团能够对紫外光进行大量吸收；第二种方式是，进入光阻200中的入射光I R的一部分在光阻200与抗反射层300的接触界面进行反射，生成第一反射光Is，同时，进入光阻200中的入射光I R中的另一部分折射进入抗反射层300，在抗反射层300与基底100的接触界面进行反射，生成的反射光重新折射进入光阻200后，形成第二反射光I B，所述第一反射光Is会与第二反射光I B之间产生相消干涉，进一步减弱反射光。借由以上两种方式，所述抗反射层300能够显著降低进入光阻200中的入射光I R的反射率，有效消除光刻技术中的驻波效应、摇摆效应与凹缺效应，提高光阻200的关键尺寸均一性和图案分辨率。
请参阅图3，本发明提供一种彩色滤光基板的制作方法，包括如下步骤：
步骤S1、如图4至图8所示，提供基底10，在所述基底10上形成抗反射层61。
具体的，所述抗反射层61的材料包括接枝吸光基团的聚合物，所述吸光基团的吸光波段为200～400nm，从而所述抗反射层61的吸光波段为200～400nm。
具体的，所述抗反射层61通过涂布的方式形成。
具体的，所述抗反射层61的厚度为1～5μm。
具体的，所述吸光基团包括萘与蒽中的一种或多种，所述聚合物包括甲酚醛环氧树脂与聚乙烯基醚中的一种或多种。
具体的，所述基底10可以为素基板或者TFT基板，所述基底10为TFT基板时，后续制得的彩色滤光基板为COA型阵列基板。
所述基底10为TFT基板时，所述步骤S1具体包括：
步骤S11、如图4所示，提供衬底基板11，在所述衬底基板11上形成第一金属层20，所述第一金属层20包括栅极21。
具体的，所述衬底基板11为素玻璃基板。
具体的，所述第一金属层20的制备方法包括物理气相沉积(PVD)、涂布光阻、曝光(PHOTO)、显影、湿蚀刻(WET)、光阻剥离(STRIP)制程。
具体的，所述第一金属层20的材料包括铝及其合金、铜及其合金、钼及其合金中的至少一种。
具体的，所述第一金属层20还包括与栅极21间隔设置的公共电极线22。在阵列基板制作完成后，将阵列基板与具有公共电极的基板对组，所述阵列基板中的公共电极线22与具有公共电极的基板中的公共电极通过接线端子相连，所述公共电极线22用于为所述公共电极提供电压信号。
步骤S12、如图5所示，在所述第一金属层20与衬底基板11上形成覆盖所述第一金属层20的第一绝缘层31，在所述第一绝缘层31上形成对应于所述栅极21上方的有源层41。
具体的，所述第一绝缘层31通过化学气相沉积法(CVD)制得，所述第一绝缘层31为氮化硅(SiNx)层。
具体的，所述有源层41的制备方法包括化学气相沉积(CVD)、涂布光阻、曝光(PHOTO)、显影、干蚀刻(DRY)、光阻剥离(STRIP)制程。
具体的，所述有源层41的材料为非晶硅或多晶硅。
步骤S13、如图6所示，在所述有源层41与第一绝缘层31上形成第二 金属层50，所述第二金属层50包括间隔设置的源极51与漏极52，所述源极51与漏极52分别与有源层41的两侧相接触。
具体的，所述第二金属层50的制备方法包括物理气相沉积(PVD)、涂布光阻、曝光(PHOTO)、显影、湿蚀刻(WET)、光阻剥离(STRIP)制程。
具体的，所述第二金属层50的材料包括铝及其合金、铜及其合金、钼及其合金中的至少一种。
步骤S14、如图7所示，在所述第二金属层50、有源层41与第一绝缘层31上形成第二绝缘层32，制得基底10。
具体的，所述第二绝缘层32通过化学气相沉积法(CVD)制得，所述第二绝缘层32为氮化硅(SiNx)层。
步骤S15、如图8所示，在所述基底10的第二绝缘层32上形成抗反射层61。
步骤S2、如图9所示，在所述抗反射层61上形成彩色光阻层70，所述彩色光阻层70通过光刻制程制得，所述光刻制程包括涂布光阻、曝光及显影制程。
具体的，所述彩色光阻层70包括呈阵列排布的数个红色色阻单元71、数个绿色色阻单元72、数个蓝色色阻单元73。
具体的，所述红色色阻单元71采用红色光阻材料通过光刻制程制得，所述绿色色阻单元72采用绿色光阻材料通过光刻制程制得，所述蓝色色阻单元73采用蓝色光阻材料通过光刻制程制得；所述红色色阻单元71、绿色色阻单元72、蓝色色阻单元73的形成顺序不限。
具体的，所述步骤S2制得的彩色光阻层70中设有对应于漏极52上方的第一过孔75。
所述步骤S2中，在所述彩色光阻层70的光刻制程中，由于光阻的下方设有抗反射层61，因此在对光阻进行曝光的过程中，所述抗反射层61能够有效吸收入射到所述抗反射层61中的紫外光，并且通过相消干涉减弱从所述光阻与抗反射层61的接触界面出射的反射光，进而消除光刻技术中的驻波效应、摇摆效应与凹缺效应，提高色阻单元的的关键尺寸均一性和图案分辨率。
另一方面，本发明将彩色光阻层70设置于抗反射层61上，还具有以下技术效果：
现有技术中，光阻材料通常与无机基底直接接触，所述光阻材料通常含有硅烷偶联剂，所述光阻材料附着于无机基底上的原理包括：(1)所述 光阻材料中的硅烷偶联剂水解为硅醇；(2)硅醇缩合为低聚物；(3)低聚物与无机基底表面的羟基(-OH)形成氢键；(4)在干燥、固化条件下，所述低聚物与无机基底表面的羟基缩合失水形成共价键，然而，此种连接方式对光阻材料特性与制程条件均要求极高，限制了光阻材料的应用，提高了光阻材料的开发成本。本发明通过在无机基底表面涂布一层由有机材料制备的抗反射层61，相较于无机基底，所述抗反射层61的表面含有更多羟基，表面张力大，润湿能力强，光阻材料与抗反射层61的偶联效果更好，光阻附着能力显著提升，能有效改善光阻脱落问题(peeling issue)。
具体的，所述步骤S1中提供的基底10为TFT基板时，所述彩色滤光基板的制作方法还包括：
步骤S3、如图10至图11所示，在所述彩色光阻层70上形成第三绝缘层33，在所述第二绝缘层32、抗反射层61、彩色光阻层70与第三绝缘层33中形成通孔81。
所述步骤S3具体包括：
步骤S31、如图10所示，在所述彩色光阻层70上形成第三绝缘层33，在所述第三绝缘层33中形成对应于所述第一过孔75的第二过孔332；
步骤S32、如图11所示，以所述第三绝缘层33与彩色光阻层70为掩膜板，对所述第二绝缘层32与抗反射层61进行干蚀刻，在所述第二绝缘层32与抗反射层61中形成第三过孔323；相互贯通的第一过孔75、第二过孔332、第三过孔323共同构成通孔81。
具体的，所述步骤S32中，对所述第二绝缘层32与抗反射层61进行干蚀刻的方式为等离子体轰击，所述等离子体为惰性气体等离子体，所述惰性气体优选为氩气。具体的，所述第三绝缘层33为有机平坦层或者无机钝化层，所述第三绝缘层33为有机平坦层时，所述有机平坦层的材料为光阻材料，所述第三绝缘层33通过涂布方式形成；所述第三绝缘层33为无机钝化层时，所述第三绝缘层33通过化学气相沉积法(CVD)形成，所述无机钝化层优选为氮化硅(SiNx)层。
具体的，所述第三绝缘层33为有机平坦层时，所述步骤S31还可以包括：在所述彩色光阻层70上形成位于所述彩色光阻层70与第三绝缘层33之间的抗反射层(未图示)，所述抗反射层能够提升在所述第三绝缘层33中形成的第二过孔332的成型效果。
步骤S4、如图12所示，在所述第三绝缘层33上形成像素电极82，所述像素电极82经由所述通孔81与漏极52相接触。
具体的，所述像素电极82的材料为氧化铟锡(ITO)。
步骤S5、如图13所示，在所述第三绝缘层33上形成与像素电极82间隔设置的黑色矩阵91以及设于所述黑色矩阵91上的光阻间隙物92。
优选的，所述黑色矩阵91与光阻间隙物92采用同种材料一体成型制得。
具体的，所述步骤S5还可以包括：在所述第三绝缘层33上形成位于所述第三绝缘层33与黑色矩阵91之间的抗反射层(未图示)，所述抗反射层能够提升黑色矩阵91与光阻间隙物92的成型效果。
上述彩色滤光基板的制作方法通过在彩色光阻层70下方设置抗反射层61，在彩色光阻层70的光刻制程中，由于光阻的下方设有抗反射层61，因此在对光阻进行曝光的过程中，所述抗反射层61能够有效吸收入射到所述抗反射层61中的紫外光，并且通过相消干涉减弱从所述光阻与抗反射层61的接触界面出射的反射光，进而消除光刻技术中的驻波效应、摇摆效应与凹缺效应，提高色阻单元的关键尺寸均一性和图案分辨率。
请参阅图13，基于上述彩色滤光基板的制作方法，本发明还提供一种彩色滤光基板，包括：基底10、设于所述基底10上的抗反射层61、设于所述抗反射层61上的彩色光阻层70。
具体的，所述抗反射层61的材料包括接枝吸光基团的聚合物，所述吸光基团的吸光波段为200～400nm，从而所述抗反射层61的吸光波段为200～400nm。
具体的，所述抗反射层61的厚度为1～5μm。
具体的，所述吸光基团包括萘与蒽中的一种或多种，所述聚合物包括甲酚醛环氧树脂与聚乙烯基醚中的一种或多种。
具体的，所述彩色光阻层70包括呈阵列排布的数个红色色阻单元71、数个绿色色阻单元72、数个蓝色色阻单元73。
具体的，所述基底10可以为素基板或者TFT基板，所述TFT基板包括：衬底基板11、设于所述衬底基板11上的第一金属层20、设于所述第一金属层20与衬底基板11上的第一绝缘层31、设于所述第一绝缘层31上的有源层41、设于所述有源层41与第一绝缘层31上的第二金属层50、设于所述第二金属层50、有源层41与第一绝缘层31上的第二绝缘层32；
所述第一金属层20包括栅极21；所述有源层41对应于所述栅极21上方设置；
所述第二金属层50包括间隔设置的源极51与漏极52，所述源极51与漏极52分别与有源层41的两侧相接触。
具体的，所述基底10为TFT基板时，所述彩色滤光基板为COA型阵 列基板。
具体的，所述基底10为TFT基板时，所述彩色滤光基板还包括：设于所述彩色光阻层70上的第三绝缘层33、设于所述第三绝缘层33上的像素电极82、设于所述第三绝缘层33上的黑色矩阵91以及设于所述黑色矩阵91上且与像素电极82间隔设置的光阻间隙物92；
所述第二绝缘层32、抗反射层61、彩色光阻层70与第三绝缘层33中设有通孔81，所述像素电极82经由所述通孔81与漏极52相接触。
具体的，所述衬底基板11为素玻璃基板。
具体的，所述第一金属层20的材料包括铝及其合金、铜及其合金、钼及其合金中的至少一种。
具体的，所述第一金属层20还包括与栅极21间隔设置的公共电极线22。
具体的，所述第一绝缘层31为氮化硅(SiNx)层。
具体的，所述有源层41的材料为非晶硅或多晶硅。
具体的，所述第二金属层50的材料包括铝及其合金、铜及其合金、钼及其合金中的至少一种。
具体的，所述第二绝缘层32为氮化硅(SiNx)层。
具体的，所述第三绝缘层33为有机平坦层或者无机钝化层，所述第三绝缘层33为有机平坦层时，所述有机平坦层的材料为光阻材料；所述第三绝缘层33为无机钝化层时，所述无机钝化层优选为氮化硅(SiNx)层。
优选的，所述黑色矩阵91与光阻间隙物92采用同种材料一体成型制得。
具体的，所述像素电极82的材料为氧化铟锡(ITO)。
具体的，所述通孔81包括：设于所述彩色光阻层70上的第一过孔75、设于所述第三绝缘层33上的第二过孔332、设于所述第二绝缘层32与抗反射层61中的第三过孔323；所述第一过孔75、第二过孔332、第三过孔323相互贯通。
具体的，所述彩色滤光基板还可以包括位于所述彩色光阻层70与第三绝缘层33之间的抗反射层(未图示)，也可以包括位于所述第三绝缘层33与黑色矩阵91之间的抗反射层(未图示)。
上述彩色滤光基板通过在彩色光阻层70下方设置抗反射层61，能够提高彩色光阻层70中的色阻单元的关键尺寸均一性和图案分辨率，进而提升含有该彩色滤光基板的液晶显示器的分辨率与显示效果。
综上所述，本发明的彩色滤光基板的制作方法通过在彩色光阻层下方 设置抗反射层，在彩色光阻层的光刻制程中，由于光阻的下方设有抗反射层，因此在对光阻进行曝光的过程中，所述抗反射层能够有效吸收入射到所述抗反射层中的紫外光，并且通过相消干涉减弱从所述光阻与抗反射层的接触界面出射的反射光，进而消除光刻技术中的驻波效应、摇摆效应与凹缺效应，提高色阻单元的关键尺寸均一性和图案分辨率。本发明的彩色滤光基板通过在彩色光阻层下方设置抗反射层，能够提高彩色光阻层中的色阻单元的关键尺寸均一性和图案分辨率，进而提升含有该彩色滤光基板的液晶显示器的分辨率与显示效果。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (11)

  1. 一种彩色滤光基板的制作方法，包括如下步骤：
    步骤S1、提供基底，在所述基底上形成抗反射层；
    步骤S2、在所述抗反射层上形成彩色光阻层，所述彩色光阻层通过光刻制程制得，所述光刻制程包括涂布光阻、曝光及显影制程。
  2. 如权利要求1所述的彩色滤光基板的制作方法，其中，所述抗反射层的材料包括接枝吸光基团的聚合物，所述吸光基团的吸光波段为200～400nm；所述抗反射层通过涂布的方式形成；所述抗反射层的厚度为1～5μm。
  3. 如权利要求2所述的彩色滤光基板的制作方法，其中，所述吸光基团包括萘与蒽中的一种或多种，所述聚合物包括甲酚醛环氧树脂与聚乙烯基醚中的一种或多种。
  4. 如权利要求1所述的彩色滤光基板的制作方法，其中，所述基底为TFT基板，所述步骤S1具体包括：
    步骤S11、提供衬底基板，在所述衬底基板上形成第一金属层，所述第一金属层包括栅极；
    步骤S12、在所述第一金属层与衬底基板上形成覆盖所述第一金属层的第一绝缘层，在所述第一绝缘层上形成对应于所述栅极上方的有源层；
    步骤S13、在所述有源层与第一绝缘层上形成第二金属层，所述第二金属层包括间隔设置的源极与漏极，所述源极与漏极分别与有源层的两侧相接触；
    步骤S14、在所述第二金属层、有源层与第一绝缘层上形成第二绝缘层，制得基底；
    步骤S15、在所述基底的第二绝缘层上形成抗反射层。
  5. 如权利要求4所述的彩色滤光基板的制作方法，还包括：
    步骤S3、在所述彩色光阻层上形成第三绝缘层，在所述第二绝缘层、抗反射层、彩色光阻层与第三绝缘层中形成通孔；
    步骤S4、在所述第三绝缘层上形成像素电极，所述像素电极经由所述通孔与漏极相接触；
    步骤S5、在所述第三绝缘层上形成与像素电极间隔设置的黑色矩阵以及设于所述黑色矩阵上的光阻间隙物。
  6. 一种彩色滤光基板，包括：基底、设于所述基底上的抗反射层、设 于所述抗反射层上的彩色光阻层。
  7. 如权利要求6所述的彩色滤光基板，其中，所述抗反射层的材料包括接枝吸光基团的聚合物，所述吸光基团的吸光波段为200～400nm；所述抗反射层的厚度为1～5μm。
  8. 如权利要求7所述的彩色滤光基板，其中，所述吸光基团包括萘与蒽中的一种或多种，所述聚合物包括甲酚醛环氧树脂与聚乙烯基醚中的一种或多种。
  9. 如权利要求6所述的彩色滤光基板，其中，所述基底为TFT基板，所述TFT基板包括：衬底基板、设于所述衬底基板上的第一金属层、设于所述第一金属层与衬底基板上的第一绝缘层、设于所述第一绝缘层上的有源层、设于所述有源层与第一绝缘层上的第二金属层、设于所述第二金属层、有源层与第一绝缘层上的第二绝缘层；
    所述第一金属层包括栅极；所述有源层对应于所述栅极上方设置；
    所述第二金属层包括间隔设置的源极与漏极，所述源极与漏极分别与有源层的两侧相接触。
  10. 如权利要求9所述的彩色滤光基板，还包括：设于所述彩色光阻层上的第三绝缘层、设于所述第三绝缘层上的像素电极、设于所述第三绝缘层上且与像素电极间隔设置的黑色矩阵以及设于所述黑色矩阵上的光阻间隙物；
    所述第二绝缘层、抗反射层、彩色光阻层与第三绝缘层中设有通孔，所述像素电极经由所述通孔与漏极相接触。
  11. 一种彩色滤光基板的制作方法，包括如下步骤：
    步骤S1、提供基底，在所述基底上形成抗反射层；
    步骤S2、在所述抗反射层上形成彩色光阻层，所述彩色光阻层通过光刻制程制得，所述光刻制程包括涂布光阻、曝光及显影制程；
    其中，所述抗反射层的材料包括接枝吸光基团的聚合物，所述吸光基团的吸光波段为200～400nm；所述抗反射层通过涂布的方式形成；所述抗反射层的厚度为1～5μm；
    其中，所述吸光基团包括萘与蒽中的一种或多种，所述聚合物包括甲酚醛环氧树脂与聚乙烯基醚中的一种或多种；
    其中，所述基底为TFT基板，所述步骤S1具体包括：
    步骤S11、提供衬底基板，在所述衬底基板上形成第一金属层，所述第一金属层包括栅极；
    步骤S12、在所述第一金属层与衬底基板上形成覆盖所述第一金属层的 第一绝缘层，在所述第一绝缘层上形成对应于所述栅极上方的有源层；
    步骤S13、在所述有源层与第一绝缘层上形成第二金属层，所述第二金属层包括间隔设置的源极与漏极，所述源极与漏极分别与有源层的两侧相接触；
    步骤S14、在所述第二金属层、有源层与第一绝缘层上形成第二绝缘层，制得基底；
    步骤S15、在所述基底的第二绝缘层上形成抗反射层；
    步骤S3、在所述彩色光阻层上形成第三绝缘层，在所述第二绝缘层、抗反射层、彩色光阻层与第三绝缘层中形成通孔；
    步骤S4、在所述第三绝缘层上形成像素电极，所述像素电极经由所述通孔与漏极相接触；
    步骤S5、在所述第三绝缘层上形成与像素电极间隔设置的黑色矩阵以及设于所述黑色矩阵上的光阻间隙物。
PCT/CN2018/078184 2018-01-22 2018-03-06 彩色滤光基板及其制作方法 Ceased WO2019140753A1 (zh)

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