WO2019136261A1 - Co-dépôt en phase gazeuse de structures métalliques chargées d'hydrogène/deutérium - Google Patents

Co-dépôt en phase gazeuse de structures métalliques chargées d'hydrogène/deutérium Download PDF

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Publication number
WO2019136261A1
WO2019136261A1 PCT/US2019/012364 US2019012364W WO2019136261A1 WO 2019136261 A1 WO2019136261 A1 WO 2019136261A1 US 2019012364 W US2019012364 W US 2019012364W WO 2019136261 A1 WO2019136261 A1 WO 2019136261A1
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WO
WIPO (PCT)
Prior art keywords
gas
substrate
deposition chamber
hydrogen
deposition
Prior art date
Application number
PCT/US2019/012364
Other languages
English (en)
Inventor
Darren R. BURGESS
Michael Raymond GREENWALD
Brent W. Barbee
Original Assignee
Ih Ip Holdings Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ih Ip Holdings Limited filed Critical Ih Ip Holdings Limited
Publication of WO2019136261A1 publication Critical patent/WO2019136261A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/584—Non-reactive treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied

Definitions

  • the present invention relates generally to deposition methods for making a metallic film, and more specifically, to deposition methods in the presence of a partial hydrogen/deuterium pressure.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • a piece of metal wire or plate is turned into vapor through a physical process, such as sputtering.
  • an atom of an inert gas, such as argon is accelerated toward a metal plate with sufficient energy to dislodge metal atoms from the plate.
  • the dislodged metal atoms or ions are accelerated under a force field to reach a substrate and are deposited onto the substrate.
  • metal atoms are part of a molecule. Energy, such as a plasma or heat, acts to break up the molecule so that individual metal atoms may deposit on a substrate.
  • the deposition process takes place in a deposition chamber.
  • the deposition chamber is under a vacuum and filled with one or more inert gases.
  • the deposition chamber can also be filled with reactive gasses, e.g., oxygen, for creating a metallic compound, such as a metal oxide.
  • the metallic compound is formed when the reactive gasses interact with the gas phase metal.
  • a co-deposition process can be used to deposit metallic atoms and one or more other atoms onto the substrate.
  • An example of existing co-deposition technologies include liquid phase co-deposition by electrolysis.
  • Another example of a co deposition technique is cyclically exposing the reaction material or deposition material to a gas in between deposition processes.
  • the present disclosure relates to methods and apparatus for fabricating a metallic or alloy structure in the presence of a partial hydrogen/deuterium gas pressure such that the metallic or alloy structure is loaded with hydrogen/deuterium upon creation. Moreover, due to the presence of the hydrogen/deuterium gas, the number of vacancies in the fabricated metallic or alloy structure is increased.
  • a method of fabricating a hydrogen loaded metallic structure in a deposition chamber comprises a substrate holder and the deposition chamber is evacuated to create a vacuum.
  • the substrate holder holds a substrate.
  • the method comprises introducing a deuterium gas to the deposition chamber to build a partial gas pressure.
  • the method further comprises depositing a metallic material onto the substrate in the partial gas pressure to form a hydrogen loaded metallic structure.
  • two or more gases may be introduced into the deposition chamber.
  • the two or more gases include a hydrogen/deuterium gas and the metallic material is deposited on the substrate in the presence of both a hydrogen/deuterium gas and a second gas.
  • the second gas is fluorine. In another embodiment, the second gas is chlorine. In some embodiments, the metallic material is deposited onto the substrate via a vapor deposition method, for example, physical vapor deposition or chemical vapor deposition.
  • a deposition chamber for fabricating a hydrogen loaded metallic structure in the presence of a partial hydrogen/deuterium gas pressure comprises a substrate holder, a vacuum pump, a gas valve, and a target.
  • the substrate holder is configured for holding a substrate onto which the metallic structure is deposited.
  • the vacuum pump is configured for evacuating the deposition chamber.
  • the gas valve is configured for introducing one or more gases into the deposition chamber, wherein the one or more gases include a hydrogen gas.
  • the target is configured to sputter the metallic material onto the substrate.
  • a first power supply is applied to provide a voltage bias between the substrate holder and the ground, and a second power supply is applied to provide a voltage bias between the target and the ground.
  • the substrate is in physical contact with the substrate holder.
  • the substrate may or may not be in electrical contact with the substrate holder.
  • the deposition chamber includes a substrate and the deposition chamber is evacuated to form a vacuum.
  • the method includes introducing a deuterium gas to the deposition chamber to build a partial gas pressure; and depositing a metallic material onto the substrate in the presence of the partial gas pressure to form the hydrogen loaded metallic structure.
  • the method includes introducing a second gas into the deposition chamber.
  • the second gas is fluorine
  • the second gas is chlorine.
  • the metallic material is deposited on the substrate in the presence of both the deuterium gas and the second gas.
  • the metallic material is deposited onto the substrate via a vapor deposition process.
  • the vapor deposition process is a chemical vapor deposition process.
  • the vapor deposition process is a physical vapor deposition process.
  • the metallic material is deposited onto the substrate via an electrolysis process.
  • the metallic material is deposited onto the substrate via an evaporation process.
  • the metallic material is deposited onto the substrate via a sputtering step.
  • the method includes transferring the substrate into a glove box filled with a hydrogen gas of a pressure greater than an atmospheric pressure, and packaging the substrate in the presence of the pressurized hydrogen gas.
  • a deposition chamber configured for fabricating a hydrogen loaded metallic structure includes a substrate for on which the metallic structure is deposited, a vacuum pump for evacuating the deposition chamber, a gas valve for introducing one or more process gases into the deposition chamber, wherein the one or more process gasses comprise a hydrogen gas, and a target device configured to provide a metallic material to be deposited onto the substrate in a partial pressure of the one or more process gases.
  • the one or more process gases comprises a second gas.
  • the second gas is fluorine
  • the second gas is chlorine
  • the metallic material is deposited onto the substrate via a physical vapor deposition (PVD) process.
  • PVD physical vapor deposition
  • the metallic material is deposited onto the substrate via a chemical vapor deposition (CVD) process, wherein in the CVD process, the metallic material is introduced as molecules in a gas and deposited as a metal coating on the substrate.
  • CVD chemical vapor deposition
  • the target device is a sputtering deposition device.
  • the deposition chamber includes one or more power supplies for providing a voltage bias between a substrate holder and ground.
  • the deposition chamber includes a substrate holder and a target, and the target includes a metallic material.
  • the method includes sputtering a metallic material onto the substrate, suspending the sputtering step, and introducing one or more process gases into the deposition chamber, wherein one of the one or more process gases is hydrogen. Then, after a pre-determined time period, evacuating the deposition chamber, re-introducing an argon gas, and resuming the sputtering step.
  • the one or more process gases comprise a second gas.
  • the second gas is fluorine
  • the second gas is chlorine.
  • a layer of hydrogen atoms is adsorbed on and absorbed into the metallic material sputtered onto the substrate, wherein the adsorbed and absorbed hydrogen atoms are of a desirable amount.
  • the sputtering step is suspended after the metallic material sputtered onto the substrate is of a desirable thickness.
  • the recited steps are performed cyclically.
  • Figure 1 illustrates an exemplary deposition chamber, according to one or more embodiments of the presently disclosed subject matter.
  • Figure 2 illustrates an exemplary cyclical deposition process, according to one or more embodiments of the presently disclosed subject matter.
  • Figure 3 is a flow chart illustrating a first exemplary gas-phase co-deposition process, according to one or more embodiments of the presently disclosed subject matter.
  • Figure 4 is a flow chart illustrating a second exemplary gas-phase co-deposition process, according to one or more embodiments of the presently disclosed subject matter.
  • Figure 5 illustrates an exemplary packaging process of a hydrogen loaded metallic structure, according to one or more embodiments of the presently disclosed subject matter.
  • the term "about”, when referring to a value or to an amount of mass, weight, time, volume, concentration, and/or percentage can encompass variations of, in some embodiments +/- 20%, in some embodiments +/-l0%, in some embodiments +/- 5%, in some embodiments +/- 1%, in some embodiments +/- 0.5%, and in some embodiments +/-0.l%, from the specified amount, as such variations are appropriate in the presently disclosed subject matter.
  • FIG. 1 illustrates an exemplary apparatus 100 configured for gas phase co deposition of a hydrogen loaded metallic structure.
  • the exemplary apparatus 100 comprises a deposition chamber 102, a vacuum pump 116, a pressure gauge 112, and a process gas supply 114.
  • the deposition chamber 102 comprises a target 104 and a substrate holder 106, which holds a substrate 118.
  • the target 104 is made of a metallic material and can be used to produce free metal atoms/ions when a voltage bias is applied to the target.
  • the metal ions are accelerated from the target 104 to the substrate holder 106 and deposited onto the substrate 118.
  • the substrate 118 is configured for deposition of the metallic material.
  • the target 104 and the substrate holder 106 are each connected to power supplies 108 and 110 respectively.
  • the voltage bias applied to the substrate holder 106 creates an electric field that accelerates metal ions that are dislodged from the target 104 toward the substrate holder 106 to form a metallic structure on the substrate 118.
  • the vacuum pump 116 is connected to the deposition chamber 102.
  • the vacuum pump 116 is configured to evacuate any undesirable or residual gas from the deposition chamber 102 to create a high vacuum in the chamber 102.
  • the deposition chamber 102 is also connected to a pressure gauge 112 and one or more gas supplies 114.
  • the pressure gauge 112 is configured to measure the pressure of the deposition chamber 102.
  • the one or more gas supplies 114 are configured to supply one or more process gases to the deposition chamber 102.
  • one of the process gases is hydrogen/deuterium gas.
  • two or more process gases may be introduced into the reaction chamber.
  • the two or more process gases include a hydrogen/deuterium gas and a second gas.
  • the second gas is fluorine.
  • the second gas is chlorine.
  • the apparatus 100 shown in Figure 1 is configured to deposit some of the metallic material dislodged from the target 104 onto the substrate 118.
  • the deposition process can be a physical vapor deposition (PVD) or a chemical vapor deposition (CVD) process.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • An exemplary PVD process is sputtering deposition, which is illustrated in Figure 2.
  • Figure 2 depicts a deposition chamber 102 that comprises the target 104 and the substrate holder 106.
  • the deposition chamber 102 is filled with argon gas.
  • the argon gas is of a pressure less than the atmospheric pressure and is in a plasma state due to a voltage bias created between the substrate holder 106 and the ground.
  • Argon ions (Ar) 202 in a plasma state possess high kinetic energies. When argon ions (Ar) 202 bombard the target 104, their kinetic energies are transferred to the metallic material in the target 104.
  • Metal ions (M + ) are dislodged from the target 104. The process of dislodging material from a target is known as sputtering.
  • the target 104 and the substrate holder 106 are connected to different power supplies.
  • the target power supply 108 can be used to enhance the sputtering of metallic material by creating a voltage bias between the target 104 and the ground.
  • the voltage bias created by the power supply 110 induces an electric field that accelerates the metal ions (M + ) towards the substrate holder 106 and the substrate 118. Some portion of the metal ions (M + ) which hit the substrate 118, are deposited on the substrate 118 to form a metallic coating 210.
  • the power supplies may be turned off for a period of time. [0055] During power off, the metallic coating 210 does not grow substantially, or not at all.
  • deuterium gas is introduced into the deposition chamber 102 via the gas supply 114.
  • Plasma argon ions collide with deuterium gas molecules and break the molecules into deuterium ions (D + ).
  • Deuterium ions (D + ) created by plasma argon ions will adsorb onto the metallic coating 210 to form a layer of deuterium 212. Some portion of the deuterium ions will diffuse into the metallic coating.
  • the vacuum pump 116 may be turned on and the deposition chamber 102 is evacuated. After both the deuterium and argon gases are evacuated, argon is reintroduced into the deposition chamber 102.
  • the power supplies to the target 104 and the substrate holder 106 are turned on.
  • the sputtering process is resumed and another layer of metallic coating 214 is deposited on the substrate 118.
  • the sputtering process may be suspended and the deuterium gas may be introduced to the deposition chamber 102 once again.
  • a second layer of deuterium is then adsorbed by and/or absorbed into the metallic coating 214. This gas-phase co-deposition process can be repeated for a number of times as needed.
  • the final product deposited on the substrate 118 is a metallic structure loaded with hydrogen.
  • the target 104 comprises palladium and the final product deposited on the substrate 118 is a deuterium loaded palladium.
  • Hydrogen/deuterium loaded palladium has many industrial applications. However, in several of the industrial applications, it is desirable to achieve a high hydrogen loading ratio. Under normal conditions, the hydrogen loading ratio in palladium often cannot exceed 0.7 or 0.8. To attain a high hydrogen loading ratio, extraordinary conditions are often required. For example, ultra-high pressure (> 10,000 Pascal) or ultra-high temperature (>1000 °C) are often needed to achieve a hydrogen loading ratio exceeding 1.0.
  • the gas phase co-deposition process depicted in Figure 2 is a cyclical deposition process, which can be used to manufacture a hydrogen loaded metallic structure having a high hydrogen loading ratio. It is noted that in the metallic structure deposited on the substrate comprising the layers 210, 212, and 214, the amount of hydrogen/deuterium ions or atoms which absorb into the metallic structure can be varied by controlling the hydrogen/deuterium gas pressure inside the deposition chamber 102, and by controlling the time period between two consecutive sputtering processes. Increasing the time period between two sputtering processes allows more hydrogen/deuterium atoms to be absorbed by the metallic structure, thus attaining a higher hydrogen loading ratio in the final deposition product.
  • Figure 3 is a flow-chart illustrating an exemplary gas phase co-deposition process
  • the gas phase co-deposition process 300 takes place in the deposition chamber 102.
  • the deposition chamber 102 comprises a (metal) target 104 and a substrate holder 106.
  • the deposition chamber 102 is evacuated to remove any undesirable gas, and an argon gas is then introduced to the deposition chamber 102.
  • a voltage bias created between the substrate holder 106 and the ground is used to produce argon plasma.
  • the deposition chamber 102 is now ready for gas phase co-deposition.
  • step 304 of the gas phase co-deposition process 300 the sputtering process starts when the argon plasma is created.
  • a metallic structure is deposited onto the substrate 118 held by the holder 106. After the metallic structure has reached a desirable thickness, the sputtering process is turned off by removing the voltage bias between the substrate 106 and the ground (step 306). A hydrogen/deuterium gas is then introduced into the deposition chamber 102 (step 306). During the time period when the sputtering process is turned off, hydrogen/deuterium ions or atoms adsorb and, after some time, absorb into the metallic layer 212.
  • the hydrogen/deuterium gas is evacuated from the deposition chamber 102 and an argon gas is re-introduced into the deposition chamber 102 (step 308). Afterwards, the sputtering process is turned on to deposit a second metallic layer 214 onto the substrate 118 (step 310).
  • deposition of the metallic layers 210, 214 and that of the hydrogen/deuterium layer 212 onto the substrate 118 are performed sequentially.
  • deposition of the metallic material may be performed in the presence of a partial hydrogen gas pressure, as illustrated in the gas phase co deposition process 400 in Figure 4.
  • a deuterium gas is introduced into the deposition chamber 102 to build a partial deuterium gas pressure (step 402).
  • a metallic material is deposited onto the substrate 118 to form a hydrogen loaded metallic structure (step 404).
  • the metallic structure fabricated in the gas phase co-deposition process 400 comprises hydrogen/deuterium atoms/ions loaded within the metallic structure and a number of vacancies that are left in the metallic structure by escaped hydrogen/deuterium atoms/ions.
  • Figure 5 illustrates an exemplary packaging process 500 of the substrate 118 created in the gas co-deposition process 300 or 400.
  • the substrate 118 is transferred into a glove box filled with a hydrogen gas of a pressure greater than one atmospheric pressure (step 502).
  • the substrate 118 is packaged in the presence of the pressurized hydrogen gas (step 504) so that the hydrogen/deuterium atoms/ions adsorbed or absorbed in the substrate 118 are retained.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne des procédés et un appareil permettant de fabriquer une structure métallique chargée d'hydrogène en présence d'une pression partielle d'hydrogène/deutérium. La présente invention montre que le dépôt physique en phase vapeur et le dépôt chimique en phase vapeur peuvent être utilisés pour le co-dépôt en phase gazeuse en vue de fabriquer une structure métallique chargée d'hydrogène.
PCT/US2019/012364 2018-01-04 2019-01-04 Co-dépôt en phase gazeuse de structures métalliques chargées d'hydrogène/deutérium WO2019136261A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862613432P 2018-01-04 2018-01-04
US62/613,432 2018-01-04

Publications (1)

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WO2019136261A1 true WO2019136261A1 (fr) 2019-07-11

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4062714A (en) * 1975-09-16 1977-12-13 Wacker-Chemitronic Gesellschaft Fur Elektronik Grundstoffe Mbh Process for making hollow silicon bodies and bodies utilizing board-shaped members to form the basic geometric shape so made
WO1985003460A1 (fr) * 1984-02-13 1985-08-15 Schmitt Jerome J Iii Procede et appareil pour le depot par jet de gaz de minces films solides conducteurs et dielectriques et produits fabriques de la sorte
US4851095A (en) * 1988-02-08 1989-07-25 Optical Coating Laboratory, Inc. Magnetron sputtering apparatus and process
US5194398A (en) * 1989-06-28 1993-03-16 Mitsui Toatsu Chemicals, Inc. Semiconductor film and process for its production
WO2006099760A2 (fr) * 2005-03-24 2006-09-28 Oerlikon Trading Ag, Trübbach Procede de fonctionnement d'une source d'evaporation par arc pulsee et installation de traitement sous vide dotee d'une source d'evaporation par arc pulsee
WO2011160766A1 (fr) * 2010-06-22 2011-12-29 Oerlikon Trading Ag, Trübbach Source d'évaporation par arc présentant un champ électrique défini
US20150111795A1 (en) * 2012-04-22 2015-04-23 Oerlikon Trading Ag, Trubbach Arc-deposited al-cr-o coatings having enhanced coating properties

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4062714A (en) * 1975-09-16 1977-12-13 Wacker-Chemitronic Gesellschaft Fur Elektronik Grundstoffe Mbh Process for making hollow silicon bodies and bodies utilizing board-shaped members to form the basic geometric shape so made
WO1985003460A1 (fr) * 1984-02-13 1985-08-15 Schmitt Jerome J Iii Procede et appareil pour le depot par jet de gaz de minces films solides conducteurs et dielectriques et produits fabriques de la sorte
US4851095A (en) * 1988-02-08 1989-07-25 Optical Coating Laboratory, Inc. Magnetron sputtering apparatus and process
US5194398A (en) * 1989-06-28 1993-03-16 Mitsui Toatsu Chemicals, Inc. Semiconductor film and process for its production
WO2006099760A2 (fr) * 2005-03-24 2006-09-28 Oerlikon Trading Ag, Trübbach Procede de fonctionnement d'une source d'evaporation par arc pulsee et installation de traitement sous vide dotee d'une source d'evaporation par arc pulsee
WO2011160766A1 (fr) * 2010-06-22 2011-12-29 Oerlikon Trading Ag, Trübbach Source d'évaporation par arc présentant un champ électrique défini
US20150111795A1 (en) * 2012-04-22 2015-04-23 Oerlikon Trading Ag, Trubbach Arc-deposited al-cr-o coatings having enhanced coating properties

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