WO2019127757A1 - Dispositif d'affichage - Google Patents

Dispositif d'affichage Download PDF

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Publication number
WO2019127757A1
WO2019127757A1 PCT/CN2018/073480 CN2018073480W WO2019127757A1 WO 2019127757 A1 WO2019127757 A1 WO 2019127757A1 CN 2018073480 W CN2018073480 W CN 2018073480W WO 2019127757 A1 WO2019127757 A1 WO 2019127757A1
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WO
WIPO (PCT)
Prior art keywords
pixel
sub
bumps
microstructures
microstructure
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PCT/CN2018/073480
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English (en)
Chinese (zh)
Inventor
金江江
徐湘伦
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武汉华星光电半导体显示技术有限公司
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Publication of WO2019127757A1 publication Critical patent/WO2019127757A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks

Definitions

  • the present invention belongs to the field of display technologies, and in particular, to a display device.
  • OLED organic light-emitting diode
  • the actual light extraction efficiency of the OLED device is only 20% to 30%.
  • the coupling of light is increased by preparing microlenses or nano-scattering layers, but practical applications are still subject to various limitations. Therefore, how to improve the light extraction efficiency of OLED devices is an urgent technical problem to be solved.
  • a display device includes: a substrate; a plurality of sub-pixels including an organic light emitting diode arrayed on the substrate; and a first inorganic layer covering the plurality of sub-pixels a plurality of first microstructures disposed on the first inorganic layer, the first microstructures being disposed on each of the sub-pixels, the first microstructures being used to increase the corresponding a light extraction efficiency of the sub-pixel; a first planar layer disposed on the plurality of first microstructures and the first inorganic layer; and a second inorganic layer disposed on the first planar layer.
  • each of the first microstructures includes a plurality of first bumps, and the plurality of first bump arrays are distributed on the first inorganic layer.
  • each of the first microstructures further includes a column of second bumps disposed between each adjacent two columns of first bumps, and each of the two columns of the second bumps is adjacent to the two columns first The spacing between the bumps is opposite.
  • the cross-sectional shape of the first bump and the second bump is superior arc shape
  • the superior arc shape of the superior arc is equal to or greater than 310°.
  • the sub-pixel is one of a red sub-pixel, a green sub-pixel, and a blue sub-pixel
  • the plurality of sub-pixels include a red sub-pixel, a green sub-pixel, and a blue sub-pixel
  • the number of bumps in the first microstructure above the green sub-pixel, the number of bumps in the first microstructure above the red sub-pixel, and the protrusion in the first microstructure above the blue sub-pixel The number of blocks increases in turn.
  • the display device further includes: a plurality of second microstructures disposed on the second inorganic layer, the second microstructures correspondingly disposed above each of the sub-pixels, the second micro a structure for improving the light extraction efficiency of the corresponding sub-pixel; a third inorganic layer disposed on the second inorganic layer and the plurality of second microstructures; and a first impurity layer disposed on the third inorganic layer Two flat layers.
  • each of the second microstructures includes a plurality of third bumps, and the plurality of third bump arrays are distributed on the second inorganic layer.
  • each of the second microstructures further includes a column of fourth bumps disposed between each adjacent two columns of third bumps, each of the columns of the fourth bumps being adjacent to the two columns of the third row The spacing between the bumps is opposite.
  • the cross-sectional shape of the third bump and the fourth bump is superior arc shape, and the superior arc shape of the superior arc is equal to or greater than 310°.
  • the sub-pixel is one of a red sub-pixel, a green sub-pixel, and a blue sub-pixel
  • the plurality of sub-pixels include a red sub-pixel, a green sub-pixel, and a blue sub-pixel
  • the number of bumps in the second microstructure above the green sub-pixel, the number of bumps in the second microstructure above the red sub-pixel, and the protrusion in the second microstructure above the blue sub-pixel increases in turn.
  • the invention has the beneficial effects that the invention forms a microstructure above the sub-pixel to improve the light-emitting efficiency and color saturation of the sub-pixel, and introduces the microstructure into the package structure to ensure continuous bonding between the film layers. Sex, thereby increasing the lifetime of the sub-pixels.
  • FIG. 1A through 1E are process diagrams of a display device in accordance with an embodiment of the present invention.
  • Figure 2 is a plan view of Figure 1A;
  • FIG. 3 is a top plan view of a first microstructure in accordance with an embodiment of the present invention.
  • FIG. 4 is a cross-sectional view of a first bump in accordance with an embodiment of the present invention.
  • Figure 5 is a top plan view of a first microstructure in accordance with another embodiment of the present invention.
  • FIG. 6 is a schematic structural diagram of a display device according to still another embodiment of the present invention.
  • Figure 7 is a top plan view of a second microstructure in accordance with yet another embodiment of the present invention.
  • Figure 8 is a cross-sectional view of a third bump in accordance with an embodiment of the present invention.
  • FIG. 9 is a top plan view of a first microstructure in accordance with yet another embodiment of the present invention.
  • FIGS. 1A through 1E are process diagrams of a display device in accordance with an embodiment of the present invention.
  • Figure 2 is a plan view of Figure 1A.
  • the substrate 101 may be, for example, a TFT substrate, which may include a flexible substrate and a plurality of TFTs (thin film transistors) formed on the flexible substrate.
  • a pixel defining layer PDL is formed on the substrate 101.
  • the pixel defining layer PDL defines a plurality of pixel holes (not labeled) arranged in an array, and each of the pixel holes is provided with one sub-pixel, and each sub-pixel includes at least one organic light emitting Diode (OLED).
  • OLED organic light emitting Diode
  • the sub-pixel may be one of a red sub-pixel, a green sub-pixel, and a blue sub-pixel, and the plurality of sub-pixels include a red sub-pixel, a green sub-pixel, and a blue sub-pixel.
  • FIG. 1A only the red sub-pixel R, the green sub-pixel G, and the blue sub-pixel B will be described.
  • the arrangement of each sub-pixel in FIG. 2 is only an example, and the color of the sub-pixel of the present invention and the arrangement of the sub-pixels of each color are not limited to those shown in FIG. 2 .
  • a first inorganic layer 201 is deposited on the pixel defining layer PDL, the red sub-pixel R, the green sub-pixel G, and the blue sub-pixel B.
  • the thickness of the first inorganic layer 201 is between 100 nm and 1000 nm, and the material of the first inorganic layer 201 is a metal or non-metal nitride, a metal or non-metal oxide, a metal or a non-metal oxynitride such as SiN x , SiO 2 . , SiN x , Al 2 O 3 , ZrO 2 and the like.
  • a plurality of first microstructures 300 are disposed on the first inorganic layer 201.
  • the first microstructures 300 and the sub-pixels are in one-to-one correspondence, and the first microstructures 300 are located above the corresponding sub-pixels. That is, a first microstructure 300 is disposed on the first inorganic layer 201 above the red sub-pixel R, and a first microstructure 300 is disposed on the first inorganic layer 201 above the green sub-pixel G, above the blue sub-pixel B.
  • a first microstructure 300 is disposed on the first inorganic layer 201.
  • Each of the first microstructures 300 can improve the light extraction efficiency and color saturation of the corresponding sub-pixels.
  • FIG. 3 is a top plan view of a first microstructure in accordance with an embodiment of the present invention.
  • the first microstructures 300 include a plurality of first bumps 301, and the plurality of first bumps 301 are distributed in an array on the first inorganic layer 201.
  • 4 is a cross-sectional view of a first bump in accordance with an embodiment of the present invention. Referring to FIG.
  • the first bump 301 according to the embodiment of the present invention is entirely in the form of a large hemisphere, that is, a portion in which a complete sphere is flattened by the upper surface of the first inorganic layer 201 to a small portion, that is,
  • the longitudinal section of the first bump 301 (cut from the upper direction to the lower side in the drawing) has a superior arc shape, that is, a large semicircular shape.
  • the arcuate radius is from 0.5 ⁇ m to 2.5 ⁇ m, but the present invention is not limited thereto.
  • the superior arc angle ⁇ of the superior arc is equal to or greater than 310°, that is, the more complete the spherical sub-pixel of the first bump 301 is, the higher the light extraction efficiency is.
  • the first bump 301 may be made of a material such as polyimide, epoxy, or silicone.
  • Figure 5 is a top plan view of a first microstructure in accordance with another embodiment of the present invention.
  • the first microstructure 300 further includes a column of second bumps 302 disposed between each adjacent two columns of first bumps 301, and each of the two columns of the second bumps 302 adjacent thereto The spacing between the columns of first bumps 301 is opposite. That is, all of the bumps of the first microstructure 300 can be arranged in a delta shape.
  • the second bump 302 is the same as the first bump 301, but the present invention is not limited thereto.
  • the light-emitting efficiency of the blue sub-pixel B, the light-emitting efficiency of the red sub-pixel R, and the light-emitting efficiency of the green sub-pixel G are sequentially lowered, in order to ensure that the light-emitting efficiency of the three is the same, the light emitted by the three is emitted.
  • the number of bumps of the first microstructure 300 located above the blue sub-pixel B ie, all of the first bumps 301 above the blue sub-pixel B
  • the number above the red sub-pixel R The number of bumps of a microstructure 300 (i.e., all of the first bumps 301 located above the red sub-pixels R) and the bumps of the first microstructures 300 above the green sub-pixels G (i.e., all located above the green sub-pixels G)
  • the number of first bumps 301) is sequentially increased.
  • the bump of the first microstructure 300 located above the blue sub-pixel B ie, all the pixels above the blue sub-pixel B
  • a bump 301 and the second bump 302 the bump of the first microstructure 300 located above the red sub-pixel R
  • the number of bumps 302) and the number of bumps of the first microstructure 300 located above the green sub-pixel G are sequentially increased.
  • a first planarization layer 401 is deposited on the first inorganic layer 201 and the plurality of first microstructures 300.
  • the first flat layer 401 has a thickness of 1-20 ⁇ m, and the material of the first flat layer 401 is a material such as polyimide, epoxy or silicone, and the first flat layer 401 has a refractive index greater than that of the first inorganic layer 201 and The refractive index of the first bump 301.
  • a second inorganic layer 202 is deposited on the first planarization layer 401.
  • the thickness of the second inorganic layer 202 is between 100 nm and 1000 nm, and the material of the second inorganic layer 202 is a metal or non-metal nitride, a metal or non-metal oxide, a metal or a non-metal oxynitride such as SiN x , SiO 2 . , SiN x , Al 2 O 3 , ZrO 2 and the like.
  • FIG. 6 is a schematic structural view of a display device according to still another embodiment of the present invention.
  • a plurality of second microstructures 300A are disposed on the second inorganic layer 202, and the second microstructures 300A are in one-to-one correspondence with the sub-pixels, and The second microstructure 300A is located above its corresponding sub-pixel. That is, a second microstructure 300A is disposed on the second inorganic layer 202 above the red sub-pixel R, and a second microstructure 300A is disposed on the second inorganic layer 202 above the green sub-pixel G, above the blue sub-pixel B. A second microstructure 300A is disposed on the second inorganic layer 202. Each of the second microstructures 300A can further improve the light extraction efficiency and color saturation of the corresponding sub-pixels.
  • Figure 7 is a top plan view of a second microstructure in accordance with yet another embodiment of the present invention.
  • the second microstructure 300A includes a plurality of third bumps 303, and the plurality of third bumps 303 are distributed in an array on the second inorganic layer 202.
  • Figure 8 is a cross-sectional view of a third bump in accordance with an embodiment of the present invention. Referring to FIG.
  • a third bump 303 according to still another embodiment of the present invention has a large hemisphere as a whole, that is, a portion in which a complete sphere is flattened by a top surface of the second inorganic layer 202 to a small portion, that is, It is said that the longitudinal section of the third bump 303 (cut from the upper direction in the drawing) has a superior arc shape, that is, a large semicircle shape. Further, the superior arc shape has a radius of 0.5 ⁇ m to 2.5 ⁇ m, but the present invention is not limited thereto.
  • the superior arc angle ⁇ of the superior arc is equal to or greater than 310°, that is, the more complete the spherical sub-pixel of the third bump 303 is, the higher the light-emitting efficiency is.
  • the third bump 303 may be made of a material such as polyimide, epoxy, or silicone.
  • the second microstructure 300A further includes a column of fourth bumps 304 disposed between each adjacent two rows of third bumps 303, each of the adjacent ones of the columns of fourth bumps 304 The spacing between the third bumps 303 is opposite. That is to say, all the bumps of the second microstructure 300A can be arranged in a delta shape. Further, the fourth bump 304 is the same as the third bump 303, but the present invention is not limited thereto.
  • the number of bumps of the second microstructure 300A above the blue sub-pixel B, the number of bumps of the second microstructure 300A above the red sub-pixel R, and the second micro located above the green sub-pixel G increases in turn.
  • the third inorganic layer 203 is disposed on the second inorganic layer 202 and the plurality of second microstructures 300A.
  • the thickness of the third inorganic layer 203 is between 100 nm and 1000 nm, and the material of the third inorganic layer 203 is a metal or non-metal nitride, a metal or non-metal oxide, a metal or a non-metal oxynitride such as SiN x , SiO 2 . , SiN x , Al 2 O 3 , ZrO 2 and the like.
  • the second flat layer 402 is disposed on the third inorganic layer 203.
  • the second flat layer 402 has a thickness of 1-20 ⁇ m, the second flat layer 402 is made of a material such as polyimide, epoxy or silicone, and the second flat layer 402 is the same as the first flat layer 401, and the first The refractive index of the second flat layer 402 is greater than the refractive indices of the third inorganic layer 203, the second inorganic layer 202, and the third bump 303.
  • the number of the bumps in the first microstructure 300 and the second microstructure 300A is not limited to those shown in the respective figures, and may be set according to actual needs.
  • the present invention forms a microstructure above the sub-pixel to improve the light-emitting efficiency and color saturation of the sub-pixel, and introduces the microstructure into the package structure to ensure the continuity of adhesion between the layers. , thereby increasing the lifetime of the sub-pixels.

Abstract

La présente invention concerne un dispositif d'affichage qui comprend : un substrat (101) ; une pluralité de sous-pixels comprenant des diodes électroluminescentes organiques et agencés en réseau sur le substrat (101) ; une première couche inorganique (201) recouvrant la pluralité de sous-pixels ; une pluralité de premières microstructures (300) disposées au niveau de la première couche inorganique (201), les premières microstructures (300) étant disposées de manière correspondante au niveau des sous-pixels respectifs, et les premières microstructures (300) étant destinées à augmenter l'efficacité d'extraction de lumière des sous-pixels correspondants ; une première couche de planarisation (401) disposée sur la pluralité de premières microstructures (300) et la première couche inorganique (201) ; et une seconde couche inorganique (202) disposée sur la première couche de planarisation (401). Dans l'invention, des microstructures sont formées au-dessus de sous-pixels pour améliorer l'efficacité d'extraction de lumière et la saturation de couleur des sous-pixels. De plus, les microstructures sont introduites dans une structure d'emballage pour assurer une continuité d'adhérence entre des couches respectives, ce qui permet d'augmenter la durée de vie des sous-pixels.
PCT/CN2018/073480 2017-12-27 2018-01-19 Dispositif d'affichage WO2019127757A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201711449007.1A CN108198836A (zh) 2017-12-27 2017-12-27 显示装置
CN201711449007.1 2017-12-27

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WO2019127757A1 true WO2019127757A1 (fr) 2019-07-04

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CN109346618A (zh) * 2018-09-13 2019-02-15 武汉华星光电半导体显示技术有限公司 Oled显示装置及其制备方法
CN109346619B (zh) * 2018-09-19 2020-04-10 武汉华星光电半导体显示技术有限公司 Oled显示面板及其制备方法
US10868277B2 (en) 2018-09-19 2020-12-15 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Organic light emitting diode display panel and manufacturing method thereof
CN110137386A (zh) * 2019-04-17 2019-08-16 深圳市华星光电半导体显示技术有限公司 Oled器件的制备方法、oled器件及显示装置
CN110048023A (zh) * 2019-04-23 2019-07-23 武汉华星光电半导体显示技术有限公司 薄膜封装结构及其制作方法
CN110098231A (zh) * 2019-04-29 2019-08-06 武汉华星光电半导体显示技术有限公司 有机发光二极管显示屏及其制作方法
CN110993826B (zh) * 2019-12-19 2021-12-03 武汉华星光电半导体显示技术有限公司 Oled显示面板及显示面板、显示装置
CN111584746A (zh) * 2020-05-13 2020-08-25 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法、显示装置
CN113013203B (zh) * 2021-02-09 2022-08-02 武汉天马微电子有限公司 显示面板及显示装置

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